Method for testing atmospheric neutron radiation and time-dependent breakdown of nano FinFET device

Abstract

The invention discloses and provides a test method for atmospheric neutron radiation and time-dependent breakdown of a nano FinFET device. A comprehensive effect test device is adopted, a sample is placed in the comprehensive effect test device, atmospheric neutron radiation beams are applied to the sample, and voltage and temperature are applied to the sample through the comprehensive effect test device; according to the method, in the atmosphere neutron radiation environment, the time-dependent breakdown test is carried out on the nanometer FinFET device so as to evaluate the comprehensive stress influence of the nanometer FinFET device on the ground and the flight height, two tests do not need to be carried out independently for evaluation, and the method is more convenient and faster.

Description

Technical Field

[0001] The present disclosure relates to the technical field of breakdown test of nano FinFET devices, and in particular to a test method for atmospheric neutron radiation and time-dependent breakdown of nano FinFET devices. Background Art

[0002] High-energy cosmic rays interact with N and O in the Earth's atmosphere to produce secondary radiation such as neutrons, protons, electrons, gamma rays, pions, and muons. The atmospheric neutron energy spectrum covers the range from eV to GeV. According to calculations, the neutron flux greater than 10MeV at sea level is about 4×10-3neutrons / cm2 / s, which corresponds to one neutron per second on a person's open palm. Neutrons are highly penetrating because they are uncharged and are widely distributed on the ground and throughout the atmosphere. However, their flux and energy spectrum are affected by factors such as altitude, solar activity, and longitude and latitude. Atmospheric neutrons bombard semiconductor devices and integrated circuits, causing single-particle effects, which are the most common cause of integrated circuit failures and failures caused by atmospheric neutrons, mainly including storage unit flips, logic function interruptions, latches, gate breakdown, and burnouts.

[0003] The high-energy atmospheric neutron radiation flux on the ground is relatively low, but the advanced electronic systems used on the ground, such as nano-scale integrated circuit chips, large-capacity storage chips, etc., these advanced electronic chips use the most advanced semiconductor processing technology, such as the three-dimensional FinFET structure technology with a characteristic size below 14nm. This process uses a three-dimensional gate structure with a thin gate oxide layer and a larger channel current. It is more susceptible to the single-particle radiation effect of atmospheric neutrons. At the same time, it is also more susceptible to degradation during the time-dependent breakdown effect (TDDB), and the two may have a superposition effect.

[0004] The existing technology mainly tests the single-particle effect of atmospheric neutrons or the TDDB effect on nano-FinFET devices separately, but there is no comprehensive effect test method. Summary of the invention

[0005] The present disclosure provides a test method for atmospheric neutron radiation and time-dependent breakdown of a nano-FinFET device to solve the technical problems recognized by the inventors.

[0006] The present invention provides a test method for atmospheric neutron radiation and time-dependent breakdown of a nano-FinFET device, including a comprehensive effect test device. The method includes the following steps:

[0007] S1. placing the sample in the comprehensive effect test device;

[0008] S2, applying an atmospheric neutron radiation beam to the sample, and applying voltage and temperature to the sample through the comprehensive effect test device;

[0009] S3, judging whether the sample is punctured;

[0010] S4. If the sample is punctured, determine whether the total atmospheric neutron irradiation injection has reached the rated total injection. If the total neutron irradiation injection has reached the rated total injection, record the life time; if the total neutron irradiation injection has not reached the rated total injection, calculate the life time τ;

[0011] S5. If the sample is not broken down, calculate whether the total neutron irradiation dose reaches the rated total dose;

[0012] S6. If the total neutron irradiation dose does not reach the rated total dose, return to step S3;

[0013] S7. If the total neutron irradiation injection reaches the rated total injection, stop applying the atmospheric neutron radiation beam, continue to apply voltage and temperature; and return to step S3.

[0014] Preferably, the calculation formula of the life time τ in step S4 is: τ=C*Vg n *exp(Ea / kT), where τ is the lifetime of the TDDB effect (s), C is the proportionality constant, Vg is the gate voltage (V), n is the electric field acceleration factor, Ea is the activation energy (eV), k is the Boltzmann constant (8.6174E-5eV / K), and T is the absolute temperature (K).

[0015] Preferably, the voltage in step S2 is set between the working voltage and 90% breakdown voltage of the sample, and the temperature is set between 100° C. and 200° C.

[0016] Preferably, the calculation of the irradiation time of the atmospheric neutron radiation beam in step S2 comprises the following steps:

[0017] S201. When the temperature remains unchanged and the voltage changes, the ratio of voltage to life time is: Where t2 and t1 are the life time under Vg2 and Vg1 voltage stress respectively, and n is the voltage acceleration factor;

[0018] S202. Based on the sample life time at voltage Vg1, the atmospheric neutron irradiation injection rate is calculated using the formula: In the formula and are the atmospheric neutron radiation fluence rates under the voltage stresses of Vg2 and Vg1, respectively, and D is the rated total atmospheric neutron fluence;

[0019] S203. Calculate the irradiation time according to the atmospheric neutron irradiation injection rate and the rated total injection.

[0020] Preferably, the calculation of the irradiation time of the atmospheric neutron radiation beam in step S2 comprises the following steps:

[0021] S211. When the voltage remains unchanged and the temperature changes, the ratio of the temperature to the life time of the sample is: Where t2 and t1 are the life time at temperatures T2 and T1 respectively, and Ea is the temperature activation energy;

[0022] S212. Based on the life time of the sample at temperature T1, calculate the atmospheric neutron irradiation injection rate using the formula: In the formula and are the atmospheric neutron radiation fluence rates at temperatures T2 and T1, respectively;

[0023] S213. Calculate the irradiation time based on the atmospheric neutron irradiation injection rate and the rated total injection.

[0024] Preferably, the comprehensive effect test device includes a movable base, a temperature box, a thermostat, an interface panel, a control component, a power supply and test equipment and a computer; the surface of the movable base is fixedly connected to a sample placement table, a sample is placed on the surface of the sample placement table, the temperature box cover is arranged on the outside of the sample placement table, the interface panel is fixedly connected to the side of the temperature box, the interface panel is connected to the control component and the power supply and test equipment respectively through wires, the control component, the power supply and test equipment are connected to the computer through wires, the thermostat is arranged on the side of the temperature box, and the thermostat is electrically connected to the interface panel.

[0025] Preferably, the control component includes a temperature controller and a display screen, the temperature controller is used to control the temperature of the thermostat, and the display screen is used to display parameters.

[0026] Preferably, the power supply and testing equipment include a power supply and a high-precision ammeter, the power supply is used to apply voltage to the sample, and the high-precision ammeter is used to test the output current of the sample.

[0027] The beneficial effects of the present disclosure are mainly that: the present invention conducts a time-dependent breakdown test on the nano-FinFET device in an atmospheric neutron radiation environment to evaluate the comprehensive stress impact of the nano-FinFET device on the ground and at flight altitudes, without the need to conduct two separate tests for evaluation, which is more convenient and quick.

[0028] It should be understood that both the foregoing general description and the following specific embodiments are for the purpose of example and illustration and do not necessarily limit the present disclosure. The accompanying drawings, which are incorporated into and constitute a part of the specification, illustrate the subject matter of the present disclosure. At the same time, the specification and the drawings are used to explain the principles of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the specific embodiments of the present disclosure or the technical solutions in the prior art, the drawings required for use in the specific embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0030] Figure 1 A flowchart of the comprehensive effect test method according to an embodiment of the present disclosure;

[0031] Figure 2 It is a schematic diagram of the structure of a comprehensive effect test device according to an embodiment of the present disclosure;

[0032] Icons: 101- movable base; 1011- sample placement table; 102- temperature box; 103- interface panel; 104- thermostat; 105- power supply and test equipment; 106- control component; 107- computer; 200- sample. DETAILED DESCRIPTION

[0033] The technical solution of the present disclosure will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments.

[0034] Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in the field without making any creative work shall fall within the scope of protection of the present disclosure.

[0035] In the description of the present disclosure, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present disclosure and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present disclosure. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0036] In the description of the present disclosure, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0037] Example

[0038] like Figure 1-2 As shown, this embodiment provides a test method for atmospheric neutron radiation and time-dependent breakdown of a nano-FinFET device, including a comprehensive effect test device, and the method includes the following steps:

[0039] S1. placing the sample 200 in the comprehensive effect test device;

[0040] In this embodiment, the sample 200 is a nano-FinFET device, and the sample 200 is placed in a comprehensive effect test device for testing.

[0041] S2, applying an atmospheric neutron radiation beam to the sample 200, and applying voltage and temperature to the sample 200 through the comprehensive effect test device;

[0042] In this embodiment, an atmospheric neutron radiation beam is applied externally, and voltage and temperature are applied to the sample 200 through the comprehensive effect test device; the test parameters can be changed by changing the input voltage and temperature, and tests under different parameter conditions can be carried out.

[0043] S3, judging whether the sample 200 is punctured;

[0044] In this embodiment, whether the sample 200 is broken down is determined by detecting the change in the current output by the sample 200 .

[0045] S4. If the sample 200 is broken down, determine whether the total atmospheric neutron irradiation injection has reached the rated total injection. If the total neutron irradiation injection has reached the rated total injection, record the life time; if the total neutron irradiation injection has not reached the rated total injection, calculate the life time τ;

[0046] In this embodiment, if sample 200 is broken down, it is necessary to determine whether the total atmospheric neutron irradiation injection reaches the rated total injection. The rated total injection can be calculated based on the irradiation time and the atmospheric neutron irradiation injection rate. The rated total injection is preset. The atmospheric neutron irradiation injection rate will vary due to changes in voltage and temperature. Therefore, by calculating the atmospheric neutron irradiation injection rate, it is possible to deduce how long the irradiation time is to reach the rated total injection. Based on the irradiation time, it can be determined whether the rated total injection is reached. If the rated total injection is reached, the life time τ is recorded and a conclusion is drawn; if the rated total injection is not reached, the life time τ needs to be calculated.

[0047] S5. If the sample 200 is not broken down, calculate whether the total neutron irradiation dose reaches the rated total dose;

[0048] S6. If the total neutron irradiation dose does not reach the rated total dose, return to step S2;

[0049] In this embodiment, if sample 200 is not broken down and the total neutron irradiation injection does not reach the rated total injection, the atmospheric neutron radiation beam, voltage, and temperature continue to be applied to sample 200 until sample 200 is broken down or the total neutron irradiation injection reaches the rated total injection. If the total neutron irradiation injection reaches the rated total injection before sample 200 is broken down, go to step S7. If sample 200 is broken down before the total neutron irradiation injection reaches the rated total injection, the lifetime time τ is obtained by calculation. This part is consistent with steps S2-S4.

[0050] S7. If the total neutron irradiation injection reaches the rated total injection, stop applying the atmospheric neutron radiation beam, continue to apply voltage and temperature; and return to step S3.

[0051] In this embodiment, if the total neutron irradiation dose reaches the rated total dose before the sample 200 is broken down, the atmospheric neutron radiation beam is no longer applied, but the voltage and temperature are still applied. After the sample 200 is broken down, the lifetime time τ is recorded.

[0052] Furthermore, the calculation formula of the life time τ in step S4 is: τ=C*Vg n *exp(Ea / kT), where τ is the lifetime of the TDDB effect (s), C is the proportionality constant, Vg is the gate voltage (V), n is the electric field acceleration factor, Ea is the activation energy (eV), k is the Boltzmann constant (8.6174E-5eV / K), and T is the absolute temperature (K).

[0053] Regarding the setting of voltage and temperature in the test, the voltage in step S2 is set between the working voltage and 90% breakdown voltage of sample 200, and the temperature is set between 100℃ and 200℃. In this embodiment, the voltage setting of the breakdown test cannot be lower than the working voltage, otherwise it cannot play an acceleration effect and the test time is too long; it cannot be higher than 90% of the breakdown voltage, otherwise sample 200 is easy to break down, and the reason for the breakdown is the overstress breakdown caused by the excessive voltage, rather than the time-dependent breakdown. The temperature of the breakdown test is set between 100℃ and 200℃. When the temperature is too low, the temperature acceleration coefficient is too low, the test time is too long, and when the temperature is too high, it is easy to cause thermal failure, rather than time-dependent breakdown failure. The time-dependent breakdown test requires tests under 3 temperature conditions and 3 voltage conditions. The temperature and voltage stress adopt an arithmetic progressive relationship. For example, the temperature can be selected as 100℃, 125℃, and 150℃, and the voltage stress can be selected as 2V, 2.5V, 3V, etc.

[0054] Regarding the setting of atmospheric neutron irradiation conditions in the test, since the time of each time-dependent breakdown test is inconsistent, there is a difference in the total atmospheric neutron radiation fluence received by sample 200 during the atmospheric neutron radiation and the time-dependent breakdown comprehensive stress test. It is necessary to normalize the fluence rate of the atmospheric neutron radiation test so that the total atmospheric neutron radiation fluence received by each chip is the same.

[0055] Specifically, the calculation of the irradiation time of the atmospheric neutron radiation beam in step S2 includes the following steps:

[0056] S201. When the temperature remains unchanged and the voltage changes, the ratio of voltage to life time is: Wherein t2 and t1 are the life time under the voltage stress of Vg2 and Vg1 respectively, and n is the voltage acceleration factor; the voltage acceleration factor n can be obtained by performing a time-dependent breakdown test on the sample 200 that has not been irradiated; the separate time-dependent breakdown test belongs to the prior art, and its specific steps and principles will not be described in detail here. The calculation formula can refer to the calculation formula of the life time τ.

[0057] S202. Based on the life time of sample 200 under voltage Vg1, calculate the atmospheric neutron irradiation injection rate. The formula is: In the formula and are respectively the atmospheric neutron radiation fluence rates under the voltage stress of Vg2 and Vg1, and D is the rated total atmospheric neutron fluence; when the voltage is set to Vg1, the rated total atmospheric neutron fluence D is calculated according to the breakdown time of sample 200, and then the atmospheric neutron radiation fluence rate under the voltage stress of Vg2 is calculated according to the mutual relationship

[0058] S203, calculating the irradiation time according to the atmospheric neutron irradiation injection rate and the rated total injection. Finally, the required irradiation time is calculated by dividing the rated total injection by the atmospheric neutron irradiation injection rate.

[0059] Similarly, the calculation of the irradiation time of the atmospheric neutron radiation beam in step S2 includes the following steps:

[0060] S211. When the voltage remains unchanged and the temperature changes, the ratio of the temperature to the life time of sample 200 is: Wherein t2 and t1 are the life time at temperatures T2 and T1 respectively, and Ea is the temperature activation energy; Ea can be obtained by performing a time breakdown test on a sample 200 that has not been irradiated.

[0061] S212. Based on the life time of the sample 200 at the temperature T1, the atmospheric neutron irradiation injection rate is calculated. The formula is: In the formula and They are the atmospheric neutron radiation fluence rates at temperatures T2 and T1 respectively; when the temperature is set to T1, the atmospheric neutron rated total fluence D is calculated according to the breakdown time of sample 200, and then the atmospheric neutron radiation fluence rate under T2 voltage stress is calculated according to the mutual relationship

[0062] S213, calculating the irradiation time according to the atmospheric neutron irradiation injection rate and the rated total injection. Finally, calculating the required irradiation time by dividing the rated total injection by the atmospheric neutron irradiation injection rate.

[0063] Among them, the comprehensive effect test device includes a movable base 101, a temperature box 102, a thermostat 104, an interface panel 103, a control component 106, a power supply and test equipment 105 and a computer 107. The surface of the movable base 101 is fixedly connected to a sample placement table 1011, and a sample 200 is placed on the surface of the sample placement table 1011. The temperature box 102 is covered on the outside of the sample placement table 1011. The interface panel 103 is fixedly connected to the side of the temperature box 102. The interface panel 103 is connected to the control component 106 and the power supply and test equipment 105 respectively through wires. The control component 106, the power supply and test equipment 105 are connected to the computer 107 through wires. The thermostat 104 is arranged on the side of the temperature box 102, and the thermostat 104 is electrically connected to the interface panel 103.

[0064] The test device is moved by the movable base 101. When atmospheric neutrons are irradiated, the radiation fluence rate is inconsistent according to the type of device and application requirements. It can be adjusted by changing the distance from the radiation test source to the irradiated sample 200. Therefore, the existence of the movable base 101 can move the test device to the position of the required fluence rate in the radiation field to ensure that the irradiated dose rate on the irradiated sample 200 meets the requirements. The temperature box 102 is used to apply temperature stress to the irradiated and time-destruction test samples 200. The temperature box 102 contains a sample placement table 1011 for placing irradiated devices. The device can also be placed vertically on the sample 200 table using a sample 200 clamp so that the device is perpendicular to the atmospheric neutron radiation beam line. The side of the temperature box 102 is an interface panel 103, which can be connected to the external control component 106, the power supply and test equipment 105 and the thermostat 104. The thermostat 104 is used to apply temperature to the temperature box 102, which can increase the temperature in the temperature box 102 to 200°C and keep it stable.

[0065] The control component 106 includes a temperature controller and a display screen. The temperature controller is used to control the temperature of the thermostat 104, and the display screen is used to display parameters. The temperature controller is used to control the thermostat 104, and the temperature box 102 is heated and maintained by controlling the thermostat 104; the display circuit is used to display the temperature and holding time of the temperature box 102, so as to facilitate observation of the state of the test room in the test room. Since there are scattered radiation particles and gamma rays in the test room, in order to ensure that the device can be used for a long time, the radiation resistance of the device needs to be considered. Therefore, the control component 106 containing radiation sensitive devices and circuits needs to be placed in the test room outside the radiation test room, and connected to the interface panel 103 on the test device using a connecting cable.

[0066] The power supply and test equipment 105 includes a power supply and a high-precision ammeter. The power supply is used to apply voltage to the sample 200, and the high-precision ammeter is used to test the output current of the sample 200. The power supply and test equipment 105, a computer, etc. are placed outside the radiation test room, and are connected to the interface panel 103 of the test device in the test room by a long cable or an optical cable. The power supply and test equipment 105 mainly includes a power supply, a high-precision ammeter, etc. The power supply is used to provide a test voltage for the irradiated device; the high-precision ammeter is used to test the output current of the device under test.

[0067] The test data is recorded and analyzed by computer 107 .

[0068] The working principle of the present invention is as follows: by placing the sample 200 on a comprehensive test device, placing the comprehensive test device in an irradiation test room, emitting an atmospheric neutron radiation beam line through an irradiation source arranged inside the irradiation test room, and the test method changes the atmospheric neutron radiation fluence rate to make the total fluence received by TDDB at various temperatures and voltages the same, applying voltage stress and temperature stress in an atmospheric neutron radiation environment to perform TDDB testing, and calculating its life time.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present disclosure, rather than to limit them. Although the present disclosure has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present disclosure.

Claims

1. A test method for atmospheric neutron radiation and time-dependent breakdown of nano-FinFET devices, characterized in that: Comprising a comprehensive effect test device, the method comprises the following steps: S1. placing the sample in the comprehensive effect test device; S2, applying an atmospheric neutron radiation beam to the sample, and applying voltage and temperature to the sample through the comprehensive effect test device; S3, judging whether the sample is punctured; S4. If the sample is punctured, determine whether the total atmospheric neutron irradiation injection has reached the rated total injection. If the total neutron irradiation injection has reached the rated total injection, record the life time. If the total neutron irradiation dose does not reach the rated total dose, calculate the lifetime time τ; S5. If the sample is not broken down, calculate whether the total neutron irradiation dose reaches the rated total dose; S6. If the total neutron irradiation dose does not reach the rated total dose, return to step S3; S7. If the total neutron irradiation injection reaches the rated total injection, stop applying the atmospheric neutron radiation beam, continue to apply voltage and temperature; and return to step S3.

2. The test method for atmospheric neutron radiation and time-dependent breakdown of a nano-FinFET device according to claim 1, characterized in that: The calculation formula of the life time τ in step S4 is: τ=C*Vg n *exp(Ea / kT), where τ is the lifetime of the TDDB effect (s), C is the proportionality constant, Vg is the gate voltage (V), n is the electric field acceleration factor, Ea is the activation energy (eV), k is the Boltzmann constant (8.6174E-5eV / K), and T is the absolute temperature (K).

3. The test method for atmospheric neutron radiation and time-dependent breakdown of a nano-FinFET device according to claim 2, characterized in that: The voltage in step S2 is set between the working voltage and 90% breakdown voltage of the sample, and the temperature is set between 100° C. and 200° C.

4. The test method for atmospheric neutron radiation and time-dependent breakdown of a nano-FinFET device according to claim 3, characterized in that: The calculation of the irradiation time of the atmospheric neutron radiation beam line in step S2 includes the following steps: S201. When the temperature remains unchanged and the voltage changes, the ratio of voltage to life time is: Where t2 and t1 are the life time under Vg2 and Vg1 voltage stress respectively, and n is the voltage acceleration factor; S202. Based on the sample life time at voltage Vg1, the atmospheric neutron irradiation injection rate is calculated using the formula: In the formula and are the atmospheric neutron radiation fluence rates under the voltage stresses of Vg2 and Vg1, respectively, and D is the rated total atmospheric neutron fluence; S203. Calculate the irradiation time according to the atmospheric neutron irradiation injection rate and the rated total injection.

5. The test method for atmospheric neutron radiation and time-dependent breakdown of a nano-FinFET device according to claim 4, characterized in that: The calculation of the irradiation time of the atmospheric neutron radiation beam line in step S2 includes the following steps: S211. When the voltage remains unchanged and the temperature changes, the ratio of the temperature to the life time of the sample is: Where t2 and t1 are the life time at temperatures T2 and T1 respectively, and Ea is the temperature activation energy; S212. Based on the life time of the sample at temperature T1, calculate the atmospheric neutron irradiation injection rate using the formula: In the formula and are the atmospheric neutron radiation fluence rates at temperatures T2 and T1, respectively; S213. Calculate the irradiation time based on the atmospheric neutron irradiation injection rate and the rated total injection.

6. A test method for atmospheric neutron radiation and time-dependent breakdown of a nano-FinFET device according to any one of claims 1 to 5, characterized in that: The comprehensive effect test device includes a movable base, a temperature box, a thermostat, an interface panel, a control component, a power supply and test equipment and a computer. The surface of the movable base is fixedly connected to a sample placement table, and a sample is placed on the surface of the sample placement table. The temperature box cover is arranged on the outside of the sample placement table. The interface panel is fixedly connected to the side of the temperature box. The interface panel is connected to the control component and the power supply and test equipment respectively through wires. The control component, the power supply and the test equipment are connected to the computer through wires. The thermostat is arranged on the side of the temperature box, and the thermostat is electrically connected to the interface panel.

7. The test method for atmospheric neutron radiation and time-dependent breakdown of nano-FinFET devices according to claim 6, characterized in that: The control component includes a temperature controller and a display screen, wherein the temperature controller is used to control the temperature of the thermostat, and the display screen is used to display parameters.

8. The test method for atmospheric neutron radiation and time-dependent breakdown of nano-FinFET devices according to claim 6, characterized in that: The power supply and test equipment includes a power supply and a high-precision ammeter, wherein the power supply is used to apply voltage to the sample, and the high-precision ammeter is used to test the output current of the sample.

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