A method, equipment, dielectric and product for recovering fatigue effect in hafnium-based ferroelectric capacitors

Abstract

This application discloses a method, apparatus, medium, and product for recovering fatigue effects of hafnium-based ferroelectric capacitors, relating to the fields of semiconductor devices and integrated circuit technology. The method includes: determining a hybrid recovery pulse sequence; obtaining the initial polarization intensity of the target hafnium-based ferroelectric memory; after performing read / write operations on the target hafnium-based ferroelectric memory, obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as a first residual polarization intensity; determining whether the target hafnium-based ferroelectric memory is in a fatigue state based on the first residual polarization intensity and the initial polarization intensity; and when the target hafnium-based ferroelectric memory is in a fatigue state, applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory. This application utilizes a hybrid recovery pulse sequence to recover fatigue effects of hafnium-based ferroelectric capacitors, which can improve the polarization intensity recovery effect and the durability of the hafnium-based ferroelectric memory.

Description

Technical Field

[0001] This application relates to the field of semiconductor devices and integrated circuit technology, and in particular to a method, equipment, medium and product for recovering fatigue effect of hafnium-based ferroelectric capacitors. Background Technology

[0002] Hafnium-based ferroelectric memory (HFC) is a highly competitive new type of non-volatile memory, boasting advantages such as fast read / write speeds, low read / write power consumption, and compatibility with CMOS processes. However, due to the fatigue effect of hafnium-based ferroelectric capacitors—that is, the remanent polarization intensity of the ferroelectric capacitor gradually decreases with increasing read / write cycles—the difference in read current between different memory states diminishes. This phenomenon makes it increasingly difficult to distinguish between different memory states, ultimately leading to device failure. This problem severely limits the application of hafnium-based ferroelectric memory. To address the device failure problem caused by the fatigue effect of hafnium-based ferroelectric capacitors, recovery schemes based on electrical pulses have been researched and used. Existing electrical pulse recovery schemes typically use bidirectional or unidirectional pulse sequences with higher voltage amplitudes than those used during read / write operations. Among these, bidirectional pulses can effectively recover the remanent polarization intensity reduced by the fatigue effect; however, frequent polarization reversals can easily cause dielectric breakdown of the hafnium-based ferroelectric capacitor, leading to complete and irreversible device failure. Therefore, ferroelectric capacitor devices have low durability. In contrast, unidirectional pulses can extend the dielectric lifetime of hafnium-based ferroelectric capacitors by avoiding polarization reversal, but their recovery effect on residual polarization intensity is very weak. Summary of the Invention

[0003] The purpose of this application is to provide a method, device, medium, and product for recovering fatigue effects of hafnium-based ferroelectric capacitors. The scheme for recovering fatigue effects of hafnium-based ferroelectric capacitors using a hybrid recovery pulse sequence can improve the polarization intensity recovery effect and the durability of hafnium-based ferroelectric memory.

[0004] To achieve the above objectives, this application provides the following solution:

[0005] In a first aspect, this application provides a method for recovering fatigue effects in hafnium-based ferroelectric capacitors, comprising:

[0006] Determine the hybrid recovery pulse sequence;

[0007] Obtain the initial polarization intensity of the target hafnium-based ferroelectric memory;

[0008] After performing read and write operations on the target hafnium-based ferroelectric memory, the real-time residual polarization intensity of the target hafnium-based ferroelectric memory is obtained as the first residual polarization intensity;

[0009] Based on the first residual polarization intensity and the initial polarization intensity, determine whether the target hafnium-based ferroelectric memory is in a fatigue state;

[0010] When the target hafnium-based ferroelectric memory is in a fatigue state, a programmed hybrid recovery pulse sequence is applied to the target hafnium-based ferroelectric memory.

[0011] Optionally, after applying the programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory, the method further includes:

[0012] The real-time residual polarization intensity of the target hafnium-based ferroelectric memory is obtained as the second residual polarization intensity;

[0013] Determine whether the second residual polarization intensity is equal to the initial polarization intensity to obtain the first determination result;

[0014] If the first judgment result is negative, it is determined that the fatigue effect of the target hafnium-based ferroelectric memory has not been recovered, and the process returns to the step "applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory";

[0015] If the first judgment result is yes, then it is determined that the fatigue effect of the target hafnium-based ferroelectric memory has been recovered, and the process returns to the step "After performing read and write operations on the target hafnium-based ferroelectric memory, obtain the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the first residual polarization intensity".

[0016] Optionally, before obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the second residual polarization intensity, the method further includes:

[0017] Determine whether the target hafnium-based ferroelectric memory has been damaged to obtain a second determination result;

[0018] If the second judgment result is negative, then the step "obtain the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the second residual polarization intensity" is executed;

[0019] If the second judgment result is yes, then the target hafnium-based ferroelectric memory is determined to be faulty, and the address of the target hafnium-based ferroelectric memory is marked.

[0020] Optionally, the hybrid recovery pulse sequence comprises N pulses; the N pulses are arranged periodically.

[0021] Within the same cycle, there are sequentially connected positive pulse segments and negative pulse segments; the positive pulse segment includes k sequentially connected positive pulses; the negative pulse segment includes mk sequentially connected negative pulses; where m is the total number of pulses in one cycle.

[0022] Optionally, determining the hybrid recovery pulse sequence includes:

[0023] Pulse signals with different flip ratios are applied to multiple fatigue samples until the corresponding fatigue sample is broken down. The total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the first recovery pulse total number N1. The total number of pulses applied when each fatigue sample is broken down is counted as the first recovery durability pulse total number T1. The total number of pulses in a single cycle of the pulse signals with different flip ratios is different.

[0024] The ratio of the total number of first recovery endurance pulses T1 to the total number of first recovery pulses N1 is determined as the total number of first recovery operations R1;

[0025] The flip ratio corresponding to the maximum total number of first recovery operations R1 is determined as the target flip ratio;

[0026] Based on the target flip ratio, the number of pulses m in a single cycle of the target is determined using the flip ratio formula;

[0027] Based on the target single-cycle pulse quantity m, pulse signals of different symmetries are applied to multiple fatigue samples until the corresponding fatigue sample is broken down. The total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the total number of second recovery pulses N2; the total number of pulses applied when each fatigue sample is broken down is counted as the total number of second recovery durability pulses T2. The total number of pulses in a single cycle of pulse signals of different symmetries is the target single-cycle pulse quantity m. The number of positive pulses contained in the positive pulse segment in a single cycle of pulse signals of different symmetries is different.

[0028] The ratio of the total number of second recovery endurance pulses T2 to the total number of second recovery pulses N2 is defined as the total number of second recovery operations R2;

[0029] The symmetry corresponding to the maximum total number of second recovery operations R2 is determined as the target symmetry;

[0030] Based on the target's symmetry, the number of pulses k in the positive pulse segment of the target is determined using the symmetry formula;

[0031] Based on the target single-cycle pulse number m and the target positive pulse segment pulse number k, multiple cycle pulse signals are applied to the fatigue sample until the real-time residual polarization intensity of the fatigue sample is equal to the initial polarization intensity of the fatigue sample, and the number of applied cycles is obtained as the target number of cycles.

[0032] The product of the target number of cycles and the target number of pulses per cycle m is determined as the target number of pulses N in the hybrid recovery pulse sequence;

[0033] Based on the target single-cycle pulse number m, the target positive pulse segment pulse number k, and the target hybrid recovery pulse sequence pulse number N, the hybrid recovery pulse sequence is determined.

[0034] Optionally, the flipping ratio formula is:

[0035] The symmetry formula is:

[0036] Optionally, determining whether the target hafnium-based ferroelectric memory is in a fatigue state based on the first residual polarization intensity and the initial polarization intensity includes:

[0037] Determine whether the first residual polarization intensity is less than the initial polarization intensity of the target hafnium-based ferroelectric memory to obtain a third determination result;

[0038] If the third judgment result is yes, then the target hafnium-based ferroelectric memory is determined to be in a fatigue state;

[0039] If the third judgment result is negative, then the target hafnium-based ferroelectric memory is determined to be in a non-fatigue state.

[0040] Secondly, this application provides a computer device, including: a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor executes the computer program to implement the above-described method for recovering fatigue effects of hafnium-based ferroelectric capacitors.

[0041] Thirdly, this application provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a processor, implements the above-described method for restoring the fatigue effect of hafnium-based ferroelectric capacitors.

[0042] Fourthly, this application provides a computer program product, including a computer program that, when executed by a processor, implements the above-described method for recovering fatigue effects of hafnium-based ferroelectric capacitors.

[0043] According to the specific embodiments provided in this application, the following technical effects are disclosed:

[0044] This application provides a method, device, medium, and product for recovering fatigue effects of hafnium-based ferroelectric capacitors. The method involves determining a hybrid recovery pulse sequence; obtaining the initial polarization intensity of the target hafnium-based ferroelectric memory; after performing read / write operations on the target hafnium-based ferroelectric memory, obtaining the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the first residual polarization intensity; determining whether the target hafnium-based ferroelectric memory is in a fatigue state based on the first residual polarization intensity and the initial polarization intensity; and when the target hafnium-based ferroelectric memory is in a fatigue state, applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory. This application scientifically and quantitatively controls the order and ratio of forward and reverse pulses by adjusting the flip ratio and symmetry parameter values ​​of the hybrid recovery pulse sequence. Through experiments on the correlation between these two parameters and the total number of recovery operations, a hybrid recovery pulse sequence with both good polarization recovery effect and long device durability can be obtained. This recovery scheme simultaneously exhibits good polarization intensity recovery effect and long device durability. Attached Figure Description

[0045] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0046] Figure 1 This is a flowchart of a method for recovering fatigue effects in hafnium-based ferroelectric capacitors.

[0047] Figure 2 This is a schematic diagram illustrating the use of a hybrid recovery pulse scheme to recover the fatigue effect of ferroelectric capacitance.

[0048] Figure 3 A schematic diagram illustrating the restoration of total operations and device durability.

[0049] Figure 4 This is a schematic diagram of the waveform of the hybrid recovery pulse sequence.

[0050] Figure 5 A schematic diagram of a symmetrical (1 / 99) hybrid recovery pulse sequence.

[0051] Figure 6 A schematic diagram of a symmetric (10 / 90) hybrid recovery pulse sequence.

[0052] Figure 7 A schematic diagram of a symmetrical (50 / 50) mixed recovery pulse sequence.

[0053] Figure 8 This is a schematic diagram of a hybrid recovery pulse sequence with a polarization reversal ratio (100%).

[0054] Figure 9 A schematic diagram of a hybrid recovery pulse sequence with a polarization reversal ratio (50%).

[0055] Figure 10 This is a schematic diagram of a mixed recovery pulse sequence with a polarization reversal ratio of 0.5%.

[0056] Figure 11 This is a schematic diagram illustrating the residual polarization intensity recovery effect of the hybrid pulse recovery sequence scheme proposed in this application.

[0057] Figure 12 This diagram illustrates the residual polarization intensity recovery effect and the total number of recovery durability pulses for the hybrid pulse recovery sequence scheme proposed in this application.

[0058] Figure 13 This is a schematic diagram of the structure of a computer device. Detailed Implementation

[0059] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the figures. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments in this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0060] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the figures and specific embodiments.

[0061] The alternation of positive and negative pulses causes a reversal in the direction of ferroelectric polarization. This reversal generates high-energy ions, which easily induce the generation and movement of lattice defects, leading to earlier dielectric breakdown. The lack of alternation makes it difficult for pinned ferroelectric domains to recover, resulting in slow fatigue recovery. Therefore, in an exemplary embodiment, a fatigue recovery method for hafnium-based ferroelectric capacitors is provided. By adjusting the order and ratio of positive and negative pulses in the pulse sequence, the alternation of positive and negative pulses is minimized to extend the total number of recovery durability pulses for the ferroelectric capacitor, while ensuring appropriate alternation to achieve a better fatigue recovery speed—that is, using as few recovery pulses as possible to recover residual polarization. Thus, device durability is improved. This ferroelectric capacitor recovery pulse operation scheme is a periodic electrical pulse sequence, with each cycle containing both positive and negative pulses. However, unlike the conventional bipolar pulse sequence scheme where positive and negative pulses alternate sequentially, the hybrid pulse scheme proposed in this application does not have a sequential alternation of positive and negative pulses, and the number of positive and negative pulses is also unequal. This application proposes parameters for flipping ratio and symmetry to describe specific waveforms.

[0062] Specifically, such as Figure 1 As shown, this embodiment provides a method for recovering fatigue effects in hafnium-based ferroelectric capacitors, including:

[0063] Step 101: Determine the hybrid recovery pulse sequence. The hybrid recovery pulse sequence consists of N pulses. The N pulses are arranged periodically. Within the same period, there are sequentially connected positive pulse segments and negative pulse segments. A positive pulse segment consists of k sequentially connected positive pulses. A negative pulse segment consists of mk sequentially connected negative pulses. Here, m is the total number of pulses in one period. The entire recovery process consists of N / m periods. The specific values ​​of these parameters need to be determined experimentally based on the correlation between the flip ratio and symmetry and the total number of recovery operations.

[0064] Step 102: Obtain the initial polarization intensity of the target hafnium-based ferroelectric memory.

[0065] Step 103: After performing read and write operations on the target hafnium-based ferroelectric memory, the real-time residual polarization intensity of the target hafnium-based ferroelectric memory is obtained as the first residual polarization intensity.

[0066] Step 104: Determine whether the target hafnium-based ferroelectric memory is in a fatigue state based on the first residual polarization intensity and the initial polarization intensity.

[0067] Step 105: When the target hafnium-based ferroelectric memory is in a fatigue state, apply the programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory.

[0068] Step 106: Determine whether the target hafnium-based ferroelectric memory has been damaged, and obtain the second determination result. If the second determination result is yes, proceed to step 107; if the second determination result is no, proceed to step 108.

[0069] Step 107: Determine that the target hafnium-based ferroelectric memory is faulty and mark the address of the target hafnium-based ferroelectric memory.

[0070] Step 108: Obtain the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the second residual polarization intensity.

[0071] Step 109: Determine whether the second residual polarization intensity is equal to the initial polarization intensity to obtain the first determination result. If the first determination result is negative, proceed to step 1010. If the first determination result is positive, proceed to step 1011.

[0072] Step 1010: Determine that the fatigue effect of the target hafnium-based ferroelectric memory has not been recovered, and return to step 105.

[0073] Step 1011: Determine that the fatigue effect of the target hafnium-based ferroelectric memory has been recovered, and return to step 103.

[0074] Step 101 includes:

[0075] Step 101-1: Apply pulse signals with different flip ratios to multiple fatigue samples until the corresponding fatigue sample is broken down. Count the total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity as the first recovery pulse total number N1; and count the total number of pulses applied when each fatigue sample is broken down as the first recovery durability pulse total number T1; the total number of pulses in a single cycle of pulse signals with different flip ratios is different.

[0076] The flip ratio is defined as the ratio of the number of times the pulse direction flips within the entire pulse sequence to the total number of pulses. This parameter can be expressed as (2 / m)×100%. When the flip ratio is 0%, the pulse sequence is a traditional unidirectional pulse; when the flip ratio is 100%, the pulse sequence is a traditional bidirectional pulse.

[0077] Step 101-2: Determine the ratio of the total number of first recovery endurance pulses T1 to the total number of first recovery pulses N1 as the total number of first recovery operations R1.

[0078] Step 101-3: Determine the flip ratio corresponding to the maximum total number of first recovery operations as the target flip ratio.

[0079] Step 101-4: Determine the number of pulses m per cycle of the target using the flip ratio formula based on the target flip ratio.

[0080] Experiments on the correlation between the flipping ratio and the total number of first recovery operations can determine the values ​​of m and the flipping ratio. The study investigates the changes in the total number of first recovery operations when different flipping ratios (2 / m)*100% are applied to fatigue samples until breakdown, while k and mk are equal. Then, the value of m and the flipping ratio corresponding to the maximum value of the total number of first recovery operations is selected.

[0081] Step 101-5: Based on the target single-cycle pulse quantity m, apply pulse signals of different symmetries to multiple fatigue samples until the corresponding fatigue sample is broken down. Count the total number of pulses applied when the real-time polarization intensity of each fatigue sample equals the initial polarization intensity as the second recovery pulse quantity N2; count the total number of pulses applied when each fatigue sample is broken down as the second recovery durability pulse quantity T2. The total number of pulses within a single cycle in pulse signals of different symmetries is the target single-cycle pulse quantity m, but the number of positive pulses contained in the positive pulse segment within a single cycle differs for pulse signals of different symmetries.

[0082] Symmetry is defined as the ratio of the number of negative pulses to the number of positive pulses in each period of a pulse sequence, and this parameter can be expressed as (mk) / k. The symmetry of a traditional bidirectional pulse is 1 / 1.

[0083] Step 101-6: Define the ratio of the total number of second recovery endurance pulses T2 to the total number of second recovery pulses N2 as the total number of second recovery operations R2.

[0084] Step 101-7: Determine the symmetry corresponding to the maximum total number of second recovery operations as the target symmetry.

[0085] Step 101-8: Based on the target symmetry, determine the number of positive pulses k in the target pulse segment using the symmetry formula.

[0086] Experiments on the correlation between symmetry and the total number of second recovery operations can determine the values ​​of k and symmetry. After determining the value of m, pulse schemes with different symmetry (mk) / k values ​​are applied to fatigue samples until breakdown, and the changes in the total number of second recovery operations are statistically analyzed. Then, the k and symmetry values ​​corresponding to the maximum value of the total number of second recovery operations are selected.

[0087] Step 101-9: Based on the target number of single-cycle pulses m and the target number of positive pulse segments k, apply multiple periodic pulse signals to the fatigue sample until the real-time residual polarization intensity of the fatigue sample is equal to the initial polarization intensity of the fatigue sample, and obtain the number of applied cycles as the target number of cycles.

[0088] Steps 101-10: Determine the product of the target number of cycles and the target number of single-cycle pulses m as the target number of pulses N in the hybrid recovery pulse sequence.

[0089] After determining the values ​​of the flip ratio and symmetry, several cycles (m pulses per cycle) of recovery pulses are applied to the fatigue sample until the residual polarization is restored to the same level as the initial residual polarization. The total number of recovery pulses applied is the value of N.

[0090] Steps 101-11: Determine the hybrid recovery pulse sequence based on the target single-cycle pulse number m, the target positive pulse segment pulse number k, and the target hybrid recovery pulse sequence pulse number N.

[0091] The formula for the flip ratio is:

[0092] The formula for symmetry is:

[0093] Step 104 includes: determining whether the first residual polarization intensity is less than the initial polarization intensity of the target hafnium-based ferroelectric memory, and obtaining a third determination result. If the third determination result is yes, the target hafnium-based ferroelectric memory is determined to be in a fatigue state. If the third determination result is no, the target hafnium-based ferroelectric memory is determined to be in a non-fatigue state.

[0094] Recognizing the durability requirements of hafnium-based ferroelectric capacitors in various applications, this application utilizes the different breakdown characteristics of ferroelectric capacitors under bipolar and unipolar pulse sequences. By adjusting the switching ratio and pulse symmetry of the pulse sequence, a novel recovery pulse scheme is designed. This scheme can ensure good residual polarization recovery while reducing the damage of the recovery pulse to the dielectric breakdown lifetime or the total number of recovery pulses, thereby improving the device durability of the ferroelectric capacitor.

[0095] Figure 2 This is a schematic diagram illustrating the use of a hybrid recovery pulse scheme to recover from the fatigue effect of ferroelectric capacitance. (See diagram below.) Figure 2 When the fatigue effect of ferroelectric capacitor is significant, one end of the ferroelectric capacitor is grounded and a mixed pulse sequence is applied to the other end until the residual polarization intensity is recovered. Figure 3 A schematic diagram illustrating the restoration of total operations and device durability. (See diagram below.) Figure 3 After applying S read / write pulses to an initial ferroelectric capacitor, the residual polarization decreases to half of its initial value. Then, after applying N recovery pulses, the residual polarization returns to its initial value. Continuing to apply recovery pulses, the device breaks down after a total of T recovery pulses. The number of pulses applied, T, is called the total number of recovery endurance pulses. The total number of recovery operations, R, is the ratio of the total number of recovery endurance pulses, T, to the total number of recovery pulses, N. The device's endurance is then the product of the total number of recovery operations and the read / write pulses, S.

[0096] Among them, the total number of first / second recovery operations

[0097] Figure 4 This is a schematic diagram of the hybrid recovery pulse sequence. (For example...) Figure 4 The sequence consists of N pulses, and these N pulses are periodic, consisting of N / m periods, where each period consists of k consecutive positive pulses and mk consecutive negative pulses.

[0098] Examples of three different symmetry hybrid pulse schemes are as follows: Figures 5 to 7 As shown. By adjusting the value of k, schemes with different symmetries can be obtained. The essential difference between these schemes lies in the different ratios of forward and reverse pulses. Examples of three mixed pulse schemes with different flip ratios are shown below. Figures 8 to 10 As shown. By adjusting the value of the number of pulses m within the cycle, different flip ratio schemes can be obtained. The essential difference between these schemes lies in the different number of flips.

[0099] In another embodiment, a method for recovering fatigue effects in hafnium-based ferroelectric capacitors is provided, wherein steps one through five constitute the process of determining and setting the hybrid recovery pulse waveform, and steps six through ten constitute the process of using the hybrid recovery pulse. The specific implementation steps are as follows:

[0100] Step 1: Select several ferroelectric capacitors in their initial state and apply read / write pulses to induce fatigue. After S read / write pulses, the residual polarization of these ferroelectric capacitors decreases to half of its initial value.

[0101] Step 2: Determine the optimal value for the flip ratio through experiments on the correlation between the flip ratio and the total number of first recovery operations. Investigate the change in the total number of first recovery operations when different flip ratio pulse schemes are applied to the fatigue sample until breakdown, assuming k and mk are equal. Then, select the flip ratio value corresponding to the maximum value of the total number of first recovery operations.

[0102] Step 3: Determine the value of symmetry through experiments on the correlation between symmetry and the total number of second recovery operations. After determining the value of m in Step 2, apply pulse schemes with different symmetry (mk) / k values ​​to the fatigue sample until breakdown, and observe the change in the total number of second recovery operations. Then, select the symmetry value corresponding to the maximum value of the total number of second recovery operations.

[0103] Step 4: Determine the value of the recovery pulse N. After determining the values ​​of the flip ratio and symmetry, apply a number of cycles (m pulses per cycle) of recovery pulses to the fatigue sample until the residual polarization is restored to the same value as the initial residual polarization. The total number of recovery pulses applied is the value of N.

[0104] Step 5: Program and save the hybrid pulse. Program the hybrid pulse to achieve the flip ratio and symmetry obtained above, as well as the recovery pulse N value, and save the waveform.

[0105] Step 6: Perform routine read and write operations on the device. The device is in normal working condition.

[0106] Step 7: Perform fatigue assessment on the device after each routine read / write operation. Analyze the signal strength during read / write operations. If the residual polarization is greater than half of the initial value, continue with Step 6. If the residual polarization is less than or equal to half of the initial value, stop reading / writing to the ferroelectric capacitor.

[0107] Step 8: Apply pre-programmed hybrid pulses to the fatigued device.

[0108] Step 9: Determine if a breakdown has occurred. If a breakdown has occurred, the device is faulty, its address is marked, and any operation on that device is terminated. If no breakdown has occurred, proceed to the next step.

[0109] Step 10: Determine if recovery has been achieved. If the residual polarization has not been recovered, return to Step 8. If the residual polarization has been recovered, return to Step 6.

[0110] Figure 11 To assess the residual polarization recovery effect of the hybrid pulse recovery sequence scheme proposed in this application. For example... Figure 11 By first performing read and write operations on the ferroelectric capacitor to induce a fatigue state, the residual polarization is significantly reduced. Then, after performing a hybrid recovery pulse scheme, the residual polarization intensity can be restored to the initial state, indicating that the scheme can effectively recover the fatigue effect. Figure 12 This diagram illustrates the residual polarization intensity recovery effect and the total number of recovery durability pulses using the hybrid pulse recovery sequence scheme proposed in this application. Unidirectional recovery pulses, lacking alternation of pulse or polarization directions, result in slow polarization recovery due to the difficulty in recovering pinned ferroelectric domains. Bidirectional recovery pulses, with their excessively frequent pulse direction alternations, cause premature dielectric breakdown, leading to a lower total number of recovery durability pulses. The hybrid pulse scheme offers advantages over both schemes. Compared to unidirectional recovery pulses, hybrid pulses are more effective at recovering polarization intensity; compared to bidirectional recovery pulses, hybrid pulses increase the total number of recovery durability pulses.

[0111] In one exemplary embodiment, a computer device is provided, which may be a server or a terminal, and its internal structure diagram may be as follows. Figure 13As shown, this computer device includes a processor, memory, input / output (I / O) interfaces, and a communication interface. The processor, memory, and I / O interfaces are connected via a system bus, and the communication interface is also connected to the system bus via the I / O interfaces. The processor provides computational and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system, computer programs, and databases. The internal memory provides the environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The I / O interfaces are used for exchanging information between the processor and external devices. The communication interface is used for communication with external terminals via a network connection. When the computer program is executed by the processor, it implements a method for recovering fatigue effects in hafnium-based ferroelectric capacitors.

[0112] Those skilled in the art will understand that Figure 13 The structures shown are merely block diagrams of some structures related to the present application and do not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than shown in the figures, or combine certain components, or have different component arrangements. In an exemplary embodiment, a computer device is provided, including a memory and a processor. The memory stores a computer program, and the processor executes the computer program to implement the steps in the above-described method embodiments.

[0113] In one exemplary embodiment, a computer-readable storage medium is provided storing a computer program that, when executed by a processor, implements the steps in the above-described method embodiments.

[0114] In one exemplary embodiment, a computer program product is provided, including a computer program that, when executed by a processor, implements the steps in the above-described method embodiments.

[0115] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, data stored, data displayed, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of the relevant data must comply with relevant regulations.

[0116] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM).

[0117] The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0118] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0119] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. A method for recovering fatigue effect in hafnium-based ferroelectric capacitors, characterized in that, include: Determine the hybrid recovery pulse sequence; Obtain the initial polarization intensity of the target hafnium-based ferroelectric memory; After performing read and write operations on the target hafnium-based ferroelectric memory, the real-time residual polarization intensity of the target hafnium-based ferroelectric memory is obtained as the first residual polarization intensity; Based on the first residual polarization intensity and the initial polarization intensity, determine whether the target hafnium-based ferroelectric memory is in a fatigue state; When the target hafnium-based ferroelectric memory is in a fatigue state, a programmed hybrid recovery pulse sequence is applied to the target hafnium-based ferroelectric memory; The determination of the hybrid recovery pulse sequence includes: Pulse signals with different flip ratios are applied to multiple fatigue samples until the corresponding fatigue sample is broken down. The total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the first recovery pulse total number N1. The total number of pulses applied when each fatigue sample is broken down is counted as the first recovery durability pulse total number T1. The total number of pulses in a single cycle of the pulse signals with different flip ratios is different. The ratio of the total number of first recovery endurance pulses T1 to the total number of first recovery pulses N1 is determined as the total number of first recovery operations R1; The flip ratio corresponding to the maximum total number of first recovery operations R1 is determined as the target flip ratio; Based on the target flip ratio, the number of pulses m in a single cycle of the target is determined using the flip ratio formula; Based on the target single-cycle pulse quantity m, pulse signals of different symmetries are applied to multiple fatigue samples until the corresponding fatigue sample is broken down. The total number of pulses applied when the real-time polarization intensity of each fatigue sample is equal to the initial polarization intensity is counted as the total number of second recovery pulses N2; the total number of pulses applied when each fatigue sample is broken down is counted as the total number of second recovery durability pulses T2. The total number of pulses in a single cycle of pulse signals of different symmetries is the target single-cycle pulse quantity m. The number of positive pulses contained in the positive pulse segment in a single cycle of pulse signals of different symmetries is different. The ratio of the total number of second recovery endurance pulses T2 to the total number of second recovery pulses N2 is defined as the total number of second recovery operations R2; The symmetry corresponding to the maximum total number of second recovery operations R2 is determined as the target symmetry; Based on the target's symmetry, the number of pulses k in the positive pulse segment of the target is determined using the symmetry formula; Based on the target single-cycle pulse number m and the target positive pulse segment pulse number k, multiple cycle pulse signals are applied to the fatigue sample until the real-time residual polarization intensity of the fatigue sample is equal to the initial polarization intensity of the fatigue sample, and the number of applied cycles is obtained as the target number of cycles. The product of the target number of cycles and the target number of pulses per cycle m is determined as the target number of pulses N in the hybrid recovery pulse sequence; Based on the target single-cycle pulse number m, the target positive pulse segment pulse number k, and the target hybrid recovery pulse sequence pulse number N, the hybrid recovery pulse sequence is determined; The formula for the flipping ratio is: ; The symmetry formula is: .

2. The method for recovering fatigue effect of hafnium-based ferroelectric capacitors according to claim 1, characterized in that, Following the application of a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory, the method further includes: The real-time residual polarization intensity of the target hafnium-based ferroelectric memory is obtained as the second residual polarization intensity; Determine whether the second residual polarization intensity is equal to the initial polarization intensity to obtain the first determination result; If the first judgment result is negative, it is determined that the fatigue effect of the target hafnium-based ferroelectric memory has not been recovered, and the process returns to the step "applying a programmed hybrid recovery pulse sequence to the target hafnium-based ferroelectric memory"; If the first judgment result is yes, then it is determined that the fatigue effect of the target hafnium-based ferroelectric memory has been recovered, and the process returns to the step "After performing read and write operations on the target hafnium-based ferroelectric memory, the real-time residual polarization intensity of the target hafnium-based ferroelectric memory is obtained as the first residual polarization intensity".

3. The method for recovering fatigue effect of hafnium-based ferroelectric capacitors according to claim 2, characterized in that, Before obtaining the real-time remanent polarization of the target hafnium-based ferroelectric memory as the second remanent polarization, the following steps are also included: Determine whether the target hafnium-based ferroelectric memory has been damaged to obtain a second determination result; If the second judgment result is negative, then the step "obtain the real-time residual polarization intensity of the target hafnium-based ferroelectric memory as the second residual polarization intensity" is executed; If the second judgment result is yes, then the target hafnium-based ferroelectric memory is determined to be faulty, and the address of the target hafnium-based ferroelectric memory is marked.

4. The method for recovering fatigue effect of hafnium-based ferroelectric capacitors according to claim 1, characterized in that, The hybrid recovery pulse sequence comprises N pulses; the N pulses are arranged periodically. Within the same cycle, there are sequentially connected positive pulse segments and negative pulse segments; the positive pulse segment includes k sequentially connected positive pulses; the negative pulse segment includes mk sequentially connected negative pulses; where m is the total number of pulses in one cycle.

5. The method for recovering fatigue effect of hafnium-based ferroelectric capacitors according to claim 1, characterized in that, Determining whether the target hafnium-based ferroelectric memory is in a fatigue state based on the first residual polarization intensity and the initial polarization intensity includes: Determine whether the first residual polarization intensity is less than the initial polarization intensity of the target hafnium-based ferroelectric memory to obtain a third determination result; If the third judgment result is yes, then the target hafnium-based ferroelectric memory is determined to be in a fatigue state; If the third judgment result is negative, then the target hafnium-based ferroelectric memory is determined to be in a non-fatigue state.

6. A computer device, comprising: A memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that the processor executes the computer program to implement the method for recovering fatigue effects of hafnium-based ferroelectric capacitors according to any one of claims 1-5.

7. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by the processor, it implements the fatigue effect recovery method of hafnium-based ferroelectric capacitors as described in any one of claims 1-5.

8. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by the processor, it implements the fatigue effect recovery method of hafnium-based ferroelectric capacitors as described in any one of claims 1-5.

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