Novel semiconductor device and manufacturing method

By growing an aluminum nitride epitaxial layer on the diamond epitaxial layer and combining ion implantation and laser annealing technology, the problem of difficulty in doping diamond materials is solved, and the production of high-performance semiconductor devices is achieved, with a wide range of application prospects.

CN119653813APending Publication Date: 2025-03-18HEFEI JIXIN TECHNOLOGY CO LTD
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Patent Information

Application Number
CN202411772489.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-04
Publication Date
2025-03-18

AI Technical Summary

Technical Problem

The difficulty in doping diamond materials, especially n-type doping, limits the production and application of semiconductor devices based on diamond materials.

Method used

A heterojunction structure of diamond epitaxial layer and nitride epitaxial layer is adopted to grow an aluminum nitride epitaxial layer on the diamond epitaxial layer by chemical vapor deposition, and a source, gate and drain electrode are made on the aluminum nitride epitaxial layer, and doping and ohmic contact are formed in combination with ion implantation and laser annealing technology.

Benefits of technology

It realizes effective doping of diamond materials and the production of high-performance semiconductor devices, solves the problem of insufficient performance of diamond materials in high temperature, high frequency and high power applications, and has broad market prospects.

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Abstract

The embodiment of the invention discloses a novel semiconductor device and a manufacturing method, the novel semiconductor device comprises a diamond epitaxial layer, an aluminum nitride epitaxial layer, a source electrode, a grid electrode and a drain electrode, the diamond epitaxial layer is arranged above a diamond substrate; the aluminum nitride epitaxial layer is arranged on the diamond epitaxial layer, and the diamond epitaxial layer is located between the aluminum nitride epitaxial layer and the diamond substrate; a source electrode, a grid electrode and a drain electrode are all arranged on the side, away from the diamond epitaxial layer, of the aluminum nitride epitaxial layer, grid electrode voltage is applied between the source electrode and the grid electrode, and active drain voltage is applied between the source electrode and the drain electrode. The diamond semiconductor device provides a high-performance solution for high-pressure, high-temperature, high-power and intense-radiation application scenes, and has a huge market prospect.
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