Spraying structure and semiconductor device thereof

Abstract

The invention discloses a spraying structure and a semiconductor device thereof, the spraying structure comprises a gas distribution assembly, a spraying assembly and a baffle plate, the spraying assembly comprises a first spraying plate and a second spraying plate, the second spraying plate is arranged below the first spraying plate, and a first space is formed between the second spraying plate and the first spraying plate; the baffle is arranged below the second spraying plate, a second space is formed between the baffle and the second spraying plate, the gas distribution assembly is provided with an outer ring channel and an inner ring channel, the outer ring channel is communicated with a first hole in the second spraying plate and a second hole in the baffle through the first space, and the inner ring channel is communicated with a third hole in the baffle through the second space. First gas enters the first space through the outer ring channel and enters the reaction cavity along the first hole and the second hole; and second gas enters the second space through the inner ring channel and enters the reaction cavity along the third hole. And the first gas and the second gas are mutually independent, so that the technical problem that the process performance becomes poor due to blow-by caused by communication of the process gas input cavity and the cleaning gas input cavity is solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a spray structure and semiconductor equipment thereof. Background Art

[0002] The spray structure in semiconductor equipment is usually used in the chemical vapor deposition process in semiconductor manufacturing, as well as other process steps that require the gas to be evenly distributed on the semiconductor surface. It can flow the reaction gas and the cleaning gas into the spray head through the central pipeline, and then discharge from the outside of the spray head and the central pipeline to achieve uniform distribution of the gas.

[0003] In traditional technology, the reaction gas and cleaning gas enter the two chambers from the upper part of the chamber through the gas inlet assembly to achieve process reaction or clean the reaction chamber. The process gas input chamber and the cleaning gas rear input chamber enter the chamber through the same transmission channel for spraying. During the gas input process, the two reaction chambers are connected due to transmission, and the reaction gas and cleaning gas will cross-flow between the two chambers, causing poor process performance. Summary of the invention

[0004] The embodiments of the present invention provide a spray structure and a semiconductor device thereof, which solve the technical problem that a process gas input chamber and a cleaning gas input chamber are connected to each other, resulting in gas cross-talk and thus causing poor process performance.

[0005] In order to solve the above-mentioned problems, according to one aspect of the present application, an embodiment of the present invention provides a spray structure, wherein the spray structure includes an air separation component, a spray component and a baffle, the spray component includes a first spray plate and a second spray plate, the second spray plate is arranged below the first spray plate and a first space is formed therebetween, the baffle is arranged below the second spray plate and a second space is formed therebetween, the air separation component is located above the spray component and has an outer ring channel and an inner ring channel, the outer ring channel is connected to the second hole on the baffle after passing through the first space and the first hole on the second spray plate, and the inner ring channel is connected to the third hole on the baffle through the second space.

[0006] In some embodiments, the gas separation component includes a gas separation block having a first input channel and a second input channel, the first input channel is connected to the first space through the outer ring channel, and the second input channel is connected to the second space through the inner ring channel.

[0007] In some embodiments, the gas separation component also includes a ceramic seat, on which a first circulation channel and a second circulation channel are opened, and the first circulation channel is arranged around the second circulation channel; and the first circulation channel is connected to the first input channel, and the second circulation channel is connected to the second input channel.

[0008] In some embodiments, there are at least two first circulation channels, and at least two first circulation channels are evenly distributed around the second circulation channel along the circumferential direction; and output ends of at least two first circulation channels are both in communication with the first space.

[0009] In some embodiments, the first input channel includes a first horizontal segment and a first vertical segment that are connected, and the first vertical segment and the first circulation channel constitute the outer circle channel; the second input channel includes a second horizontal segment and a second vertical segment that are connected, and the second vertical segment and the second circulation channel constitute the inner circle channel.

[0010] In some embodiments, a first center hole is formed on the first spray plate, and the first center hole is connected to the outer ring channel; the cleaning gas can enter the first space through the first center hole after passing through the outer ring channel.

[0011] In some embodiments, a second center hole is opened on the second spray plate, the top of the second center hole is nested in the first center hole, and there is a gap between the two for the circulation of cleaning gas, and the second center hole is connected to the inner circle channel; the reaction gas can enter the second space through the second center hole after passing through the inner circle channel.

[0012] In some embodiments, the first hole and the second hole are connected by a connector, the connector is located in the second space, and the outer ring channel passes through the first space, the first hole, the connector and the second hole in sequence to achieve gas spraying; wherein the top of the connector fits tightly with the first hole, and the bottom of the connector fits tightly with the second hole to prevent gas leakage into the second space.

[0013] In some embodiments, the first hole and the second hole are provided in plurality and correspond one to one; and / or the third hole is provided in plurality and the plurality of third holes are evenly distributed on the baffle.

[0014] According to another aspect of the present application, an embodiment of the present invention provides a semiconductor device, wherein the semiconductor device includes the above-mentioned spray structure.

[0015] Compared with the prior art, the spray structure of the present invention has at least the following beneficial effects:

[0016] The spray structure provided by the present invention includes an air separation component, a spray component and a baffle, the spray component includes a first spray plate and a second spray plate, the second spray plate is arranged below the first spray plate and a first space is formed between the two, the baffle is arranged below the second spray plate and a second space is formed between the two, the air separation component is located above the spray component and has an outer ring channel and an inner ring channel, the outer ring channel is connected to the second hole on the baffle after passing through the first space and the first hole on the second spray plate, and the inner ring channel is connected to the third hole on the baffle through the second space.

[0017] In the specific use process, the first gas (which can be a reaction gas or a cleaning gas) enters the first space through the outer ring channel, and then enters the reaction chamber along the first hole on the second spray plate and the second hole on the baffle; the second gas (which can be a cleaning gas or a reaction gas) enters the second space through the inner ring channel, and then enters the reaction chamber along the third hole on the baffle. In this process, the first gas and the second gas are independent of each other and complement each other, so that the cleaning gas and the reaction gas enter the chamber through two different channels, thereby preventing the cleaning gas and the reaction gas from mixing with each other, and preventing the process performance from being unstable due to mixing with each other.

[0018] The semiconductor device provided by the present invention is designed based on the above-mentioned spray structure. Its beneficial effects refer to the beneficial effects of the above-mentioned spray structure, which will not be described in detail here.

[0019] In addition, in the cleaning machine provided by the present invention, the detection component detects the thickness of the surface element of the heating plate in real time, that is, while the polishing component is working according to the polishing time, the detection component is still working, and when it detects that the thickness of the surface element of the heating plate meets the requirement, the polishing component stops working. The detection component, the polishing component and the control component in the present invention form a closed-loop feedback system, which can prevent the surface of the heating plate from being uncleanly cleaned or the surface material from being polished too much.

[0020] The above description is only an overview of the technical solution of the present invention. In order to more clearly understand the technical means of the present invention and implement it according to the contents of the specification, the following is a detailed description of the preferred embodiments of the present invention in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0022] Figure 1is an exploded view of a spray structure provided by an embodiment of the present invention;

[0023] Figure 2 yes Figure 1 A partial enlarged view of the F in the middle;

[0024] Figure 3 is a structural schematic diagram of a spray structure provided by an embodiment of the present invention;

[0025] Figure 4 This is a first front view of a spray structure provided by an embodiment of the present invention;

[0026] Figure 5 yes Figure 4 Cross-sectional view along EE direction;

[0027] Figure 6 yes Figure 5 A partial enlarged view of point B in the middle;

[0028] Figure 7 is a second front view of a spray structure provided by an embodiment of the present invention;

[0029] Figure 8 yes Figure 7 Cross-sectional view along DD direction;

[0030] Fig. 9 yes Figure 8 A partial enlarged view of the middle A;

[0031] Fig.10 This is a third front view of a spray structure provided by an embodiment of the present invention;

[0032] Fig.11 yes Fig.10 Cross-sectional view along CC direction;

[0033] Fig.12 is a first cross-sectional view of a gas distribution block in a spray structure provided by an embodiment of the present invention;

[0034] Fig.13 is a structural schematic diagram of a gas distribution block in a spray structure provided by an embodiment of the present invention;

[0035] Fig.14 is a second cross-sectional view of a gas distribution block in a spray structure provided by an embodiment of the present invention;

[0036] Fig.15 is a structural schematic diagram of a ceramic seat in a spray structure provided by an embodiment of the present invention;

[0037] Fig.16 is a cross-sectional view of a ceramic seat in a spray structure provided by an embodiment of the present invention;

[0038] Fig.17 It is a path diagram of gas flow in a spray structure provided by an embodiment of the present invention;

[0039] Reference numerals:

[0040] 1. Gas distribution assembly; 11. Gas distribution block; 12. Ceramic seat; 111. First input channel; 112. Second input channel; 121. First circulation channel; 122. Second circulation channel; 2. Spray assembly; 21. First spray plate; 22. Second spray plate; 221. First hole; 3. Baffle; 31. Second hole; 32. Third hole; 4. First space; 5. Second space; 6. Connector. DETAILED DESCRIPTION

[0041] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the specific implementation methods, structures, features and effects of the present invention application are described in detail below in conjunction with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures, or characteristics in one or more embodiments may be combined in any suitable form.

[0042] In the description of the present invention, it should be clarified that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, but are not necessarily used to describe a specific order or sequence; the terms "vertical", "lateral", "longitudinal", "front", "rear", "left", "right", "up", "down", "horizontal", etc. indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention, and do not mean that the referred device or element must have a specific direction or position, and therefore cannot be understood as a limitation on the present invention.

[0043] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0044] In order to better understand the above technical solution, the above technical solution will be described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0045] Example 1

[0046] This embodiment provides a spray structure such as Figure 1-Figure 17 As shown, the spray structure includes an air separation component 1, a spray component 2 and a baffle 3, the spray component 2 includes a first spray plate 21 and a second spray plate 22, the second spray plate 22 is arranged below the first spray plate 21 and a first space 4 is formed therebetween, the baffle 3 is arranged below the second spray plate 22 and a second space 5 is formed therebetween, the air separation component 1 is located above the spray component 2 and has an outer ring channel and an inner ring channel, the outer ring channel is connected to the second hole 31 on the baffle 3 after passing through the first space 4 and the first hole 221 on the second spray plate 22, and the inner ring channel is connected to the third hole 32 on the baffle 3 through the second space 5.

[0047] In the semiconductor manufacturing process, in addition to the spray deposition of reactive gases, cleaning by gas is also one of the key steps. The spray reaction chamber is mainly used for uniform distribution and deposition of gases to ensure the formation of a stable single crystal structure in chemical vapor deposition. Gas cleaning is used to remove contaminants on the wafer surface.

[0048] In this embodiment, the gas separation component 1 is mainly used to separate the reaction gas and the cleaning gas. The spray component 2 is combined with the baffle 3 to spray the reaction gas and the cleaning gas. Specifically, the spray component 2 includes a first spray plate 21 and a second spray plate 22. The general outlines of the first spray plate 21 and the second spray plate 22 are both circular structures, and the two are arranged up and down with a first space 4 between them. The general outline of the baffle 3 is also a circular structure. The baffle 3 is arranged below the second spray plate 22, and a second space 5 is formed between the baffle 3 and the second spray plate 22.

[0049] In the specific use process, the first gas (which can be a reaction gas or a cleaning gas) enters the first space 4 through the outer ring channel, and then enters the reaction chamber along the first hole 221 on the second shower plate 22 and the second hole 31 on the baffle 3; the second gas (which can be a cleaning gas or a reaction gas) enters the second space 5 through the inner ring channel, and then enters the reaction chamber along the third hole 32 on the baffle 3. In this process, the first gas and the second gas are independent of each other and complement each other, so that the cleaning gas and the reaction gas enter the cavity through two different channels, thereby preventing the cleaning gas and the reaction gas from mixing with each other, and preventing the process performance from being unstable due to mixing with each other.

[0050] In a specific embodiment, the gas separation component 1 includes a gas separation block 11, such as Figure 12-14 As shown, the gas separation block 11 has a first input channel 111 and a second input channel 112 , the first input channel 111 is connected to the first space 4 through the outer ring channel, and the second input channel 112 is connected to the second space 5 through the inner ring channel.

[0051] The material of the gas distribution block 11 is aluminum, which has many applications in semiconductor manufacturing, especially in the use of shower heads and chambers. Aluminum alloy is often used in shower heads in semiconductor equipment because it has high temperature resistance, corrosion resistance and other characteristics, and is a key component in the gas distribution process.

[0052] Specifically, the general outline of the gas splitter block 11 is a cubic structure, and there are two spaces inside it, namely, a first input channel 111 located in the outer circle and a second input channel 112 located in the inner circle, wherein the first input channel 111 is connected to an external first gas source, and the second input channel 112 is connected to an external second gas source. In the specific use process, the first gas enters the first space 4 through the first input channel 111, and then enters the reaction chamber along the first hole 221 on the second shower plate 22 and the second hole 31 on the baffle 3; the second gas enters the second space 5 through the second input channel 112, and then enters the reaction chamber along the third hole 32 on the baffle 3.

[0053] In a specific embodiment, Fig.15 and Fig.16 As shown, the gas separation component 1 also includes a ceramic seat 12, on which a first circulation channel 121 and a second circulation channel 122 are opened, and the first circulation channel 121 is arranged around the second circulation channel 122; and the first circulation channel 121 is connected to the first input channel 111, and the second circulation channel 122 is connected to the second input channel 112.

[0054] Specifically, ceramics have good high temperature resistance and mechanical strength. In semiconductor manufacturing, ceramics are often used for the lining of the reaction chamber, such as silicon carbide materials, which are widely used in parts in the reaction chamber due to their high density, strong corrosion resistance, high temperature resistance and other characteristics. In addition, ceramic rings are also used in semiconductor reaction chambers to achieve high temperature processing and isolate different processing areas to avoid chemical reaction interference. Therefore, the ceramic seat 12 in this embodiment will not affect the reaction. In addition, the ceramic seat 12 is also used to extend the flow path of the reaction gas and the cleaning gas, and the extension of the gas path can enhance the mixing effect in the reaction chamber. For example, in a chemical vapor deposition furnace, by changing the gas flow mode, the length of the gas flow path is extended by about 50%, thereby improving the preheating efficiency and mass transfer coefficient; in addition, in the field of semiconductor manufacturing, extending the gas flow path can reduce the pressure in the reaction chamber, increase the average free path of the gas molecules, and enable the gas to move a longer distance without colliding with other molecules, thereby enhancing the diffusion of reactants and by-products in the chamber, which is essential for achieving uniform thin film deposition.

[0055] More specifically, the general outline of the ceramic seat 12 is a square structure, in which a second circulation channel 122 is opened in the middle, and the second circulation channel 122 runs through the thickness of the ceramic seat 12; a first circulation channel 121 is opened around the second circulation channel 122, and the first circulation channel 121 runs through the thickness of the ceramic seat 12. In the specific use process, the first gas enters the first circulation channel 121 after passing through the first input channel 111, and then enters the first space 4, and then enters the reaction chamber along the first hole 221 on the second shower plate 22 and the second hole 31 on the baffle 3; the second gas enters the second second circulation channel 122 after passing through the second input channel 112, and then enters the second space 5, and then enters the reaction chamber along the third hole 32 on the baffle 3.

[0056] In a specific embodiment, Fig.15 and Fig.16 As shown, there are at least two first circulation channels 121 , and the at least two first circulation channels 121 are evenly distributed around the second circulation channel 122 along the circumferential direction; and the output ends of at least two first circulation channels 121 are both connected to the first space 4 .

[0057] One first circulation channel 121 can be provided, in which case the first circulation channel 121 is a whole circular structure; at least two first circulation channels 121 can also be provided, in which case each first circulation channel 121 is an arc-shaped structure. In one embodiment, three first circulation channels 121 are provided, and the three arc-shaped structures are arranged at intervals, and their tops are connected to the first input channel 111, and their bottoms are connected to the first space 4 to realize gas transfer.

[0058] In a specific embodiment, Fig.12 As shown, the first input channel 111 includes a first horizontal section and a first vertical section that are connected, and the first vertical section and the first circulation channel 121 constitute the outer circle channel; the second input channel 112 includes a second horizontal section and a second vertical section that are connected, and the second vertical section and the second circulation channel 122 constitute the inner circle channel.

[0059] The general outline of the gas separation block 11 is a cube structure, and a horizontal channel is opened on one of the side surfaces, which is the above-mentioned first horizontal section. When the horizontal channel extends to the top of the first circulation channel 121, the adjustment direction is extended downward, which is the above-mentioned first vertical section. At this time, the first vertical section can just communicate with the first circulation channel 121, forming the outer ring channel of the gas separation component 1, which is used to transmit one of the gases. On the other side of the gas separation block 11, another horizontal channel is opened, which is the above-mentioned second horizontal section. When the horizontal channel extends to the top of the second circulation channel 122, the adjustment direction is extended downward, which is the above-mentioned second vertical section. At this time, the second vertical section can just communicate with the second circulation channel 122, forming the inner ring channel of the gas separation component 1, which is used to transmit another gas.

[0060] In a specific embodiment, a first central hole is provided on the first shower plate 21, and the first central hole is connected to the outer ring channel; the cleaning gas can enter the first space 4 through the first central hole after passing through the outer ring channel. The center of the first shower plate 21 has a first central hole extending upward, and the first central hole runs through the thickness direction of the first shower plate 21, and the top of the first central hole is connected to the bottom of the first circulation channel 121. In this way, the gas passing through the first circulation channel 121 can enter the first space 4 through the first central hole.

[0061] In a specific embodiment, a second center hole is provided on the second shower plate 22, the top of the second center hole is nested in the first center hole, and there is a gap between the two for the circulation of cleaning gas, and the second center hole is connected to the inner circle channel; after passing through the inner circle channel, the reaction gas can enter the second space 5 through the second center hole. The center of the second shower plate 22 has a second center hole extending upward, and the diameter of the second center hole is smaller than the diameter of the first center hole, so that the top of the second center hole is nested in the first center hole, and there is a gap between the two. In this way, the gas passing through the first circulation channel 121 can enter the first space 4 through the gap, and the gas passing through the second circulation channel 122 can enter the second space 5 through the second center hole.

[0062] In a specific embodiment, the first hole 221 and the second hole 31 are connected by a connector 6, the connector 6 is located in the second space 5, and the outer ring channel sequentially passes through the first space 4, the first hole 221, the connector 6 and the second hole 31 to spray the gas; wherein the top of the connector 6 is tightly fitted with the first hole 221, and the bottom of the connector 6 is tightly fitted with the second hole 31 to prevent gas from leaking into the second space 5. Multiple first holes 221 and second holes 31 are provided and correspond one to one.

[0063] There are a plurality of first holes 221 with a larger area at a relatively middle position of the second spray plate 22, and a second hole 31 corresponding to the first hole 221 at a relatively middle position of the baffle plate 3; at the same time, the first spray plate 21 and the second spray plate 22 are both annular, and the two are coaxially arranged, and the area of ​​the first spray plate 21 is larger, so compared with the second spray plate 22, the first spray plate 21 has an extension extending to the surrounding, and the extension is also provided with a first hole 221. In addition, in order to prevent the gas from leaking into the second space 5 when the gas enters the second hole 31 from the first hole 221 at the middle position, a connector 6 is provided, and the top of the connector 6 is tightly fitted with the first hole 221, and the bottom is tightly fitted with the second hole 31. In this way, the gas transmitted from the outer ring channel is divided into two parts after the first space 4, one part enters the cavity through the first hole 221 of the extension part, and the other part enters the cavity through the first hole 221 at the relatively middle position, the connector 6 and the second hole 31 in sequence.

[0064] There are a plurality of third holes 32, and the plurality of third holes 32 are evenly distributed on the baffle 3. The third holes 32 are distributed in the middle and near the edge of the baffle 3.

[0065] Using the spray structure provided in this embodiment, such as Fig.17 The blue arrows in the figure indicate that the flow path of the cleaning gas is: the first horizontal section, the first vertical section, the first circulation channel 121, the first space 4, the first hole 221 on the extension, and the cavity; or the first horizontal section, the first vertical section, the first circulation channel 121, the first space 4, the first hole 221 at the relatively middle position, the connector 6, the second hole 31, and the cavity. The flow path of the process gas is: the second horizontal section, the second vertical section, the second circulation channel 122, the second space 5, and the third hole 32. Fig.17 The red arrow in the

[0066] The spray structure provided in this embodiment, firstly, the gas separation block 11 and the ceramic seat 12 are both double-layer structures with double-layer channels, and the cleaning gas and the process gas enter the reaction chamber from the same input chamber to two different input chambers, thereby preventing the process gas from crossing through the cleaning gas input chamber. Secondly, the first hole 221 for transmitting the cleaning gas on the second spray plate 22 is provided at a position close to the center and on the extension, wherein the first hole 221 close to the center can prevent the generation of turbulence and the reduction of the cleaning rate in the central area, and the cleaning gas enters the chamber more evenly and etches the attachments evenly; and the first hole 221 close to the edge can increase the cleaning efficiency of the cavity wall. In addition, a plurality of second holes 31 are provided, the area of ​​the baffle plate 3 is larger, and the aperture of a single second hole 31 is smaller, which increases the channel for the cleaning gas to enter the cavity, and more evenly distributes the process gas, preventing the fixing structure of the parts from affecting the gas flow and causing uneven distribution of the process gas locally, and at the same time preventing the process gas in the middle part of the cavity from flowing back through the hole of the baffle and crossing.

[0067] Example 2

[0068] This embodiment provides a semiconductor device, which includes the spray structure described in Embodiment 1.

[0069] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A spray structure, characterized in that: The spray structure includes an air separation component, a spray component and a baffle, the spray component includes a first spray plate and a second spray plate, the second spray plate is arranged below the first spray plate and a first space is formed therebetween, the baffle is arranged below the second spray plate and a second space is formed therebetween, the air separation component is located above the spray component and has an outer ring channel and an inner ring channel, the outer ring channel is connected to the second hole on the baffle after passing through the first space and the first hole on the second spray plate, and the inner ring channel is connected to the third hole on the baffle through the second space.

2. The spray structure according to claim 1, characterized in that: The gas separation component includes a gas separation block, and the gas separation block has a first input channel and a second input channel. The first input channel is connected to the first space through the outer ring channel, and the second input channel is connected to the second space through the inner ring channel.

3. The spray structure according to claim 2, characterized in that: The gas distribution component also includes a ceramic seat, on which a first circulation channel and a second circulation channel are opened, and the first circulation channel is arranged around the second circulation channel; and the first circulation channel is connected to the first input channel, and the second circulation channel is connected to the second input channel.

4. The spray structure according to claim 3, characterized in that: There are at least two first circulation channels, and the at least two first circulation channels are evenly distributed around the second circulation channel along the circumferential direction; and the output ends of at least two first circulation channels are both connected to the first space.

5. The spray structure according to claim 4, characterized in that: The first input channel includes a first horizontal section and a first vertical section that are connected, and the first vertical section and the first circulation channel constitute the outer circle channel; the second input channel includes a second horizontal section and a second vertical section that are connected, and the second vertical section and the second circulation channel constitute the inner circle channel.

6. The spray structure according to claim 1, characterized in that: A first center hole is formed on the first spray plate, and the first center hole is connected to the outer ring channel; the cleaning gas can enter the first space through the first center hole after passing through the outer ring channel.

7. The spray structure according to claim 6, characterized in that: A second center hole is provided on the second spray plate, the top of the second center hole is nested in the first center hole, and there is a gap between the two for the circulation of cleaning gas, and the second center hole is connected to the inner circle channel; the reaction gas can enter the second space through the second center hole after passing through the inner circle channel.

8. The spray structure according to claim 1, characterized in that: The first hole and the second hole are connected by a connecting piece, the connecting piece is located in the second space, and the outer ring channel passes through the first space, the first hole, the connecting piece and the second hole in sequence to realize gas spraying; wherein, the top of the connecting piece is tightly fitted with the first hole, and the bottom of the connecting piece is tightly fitted with the second hole to prevent gas leakage into the second space.

9. The spray structure according to claim 8, characterized in that: The first holes and the second holes are both provided in plural and one-to-one correspondence; and / or the third holes are provided in plural and the plurality of third holes are evenly distributed on the baffle.

10. A semiconductor device, characterized in that: The semiconductor device comprises the spray structure according to any one of claims 1 to 9.

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