Topological state frequency adjustment method, device and equipment, and computer-readable storage medium

Abstract

The present disclosure relates to a method and apparatus, equipment, and computer-readable storage medium for adjusting the frequency of a topological state, and relates to the field of engineering structure technology. The method comprises: using a piezoelectric sheet as a resonator, generating a target unit structure through the unit structure of the piezoelectric sheet and the target material; applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure; using the target unit structure to generate a one-dimensional target system, setting a displacement excitation to the one-dimensional target system to obtain an excited topological state in the topological band gap; applying a voltage to the one-dimensional target system, and adjusting the excitation frequency of the excited topological state based on the voltage. The present disclosure realizes the control of the excitation frequency of the topological state by an external voltage while keeping the target material structure unchanged, thereby simplifying the operation and improving the flexibility of the system.

Description

Technical Field

[0001] The embodiments of the present disclosure relate to the technical field of engineering structures, and in particular, to a topological state frequency adjustment method, a topological state frequency adjustment apparatus, a topological state frequency adjustment device, and a computer-readable storage medium. Background Art

[0002] In related technologies, one-dimensional topological metamaterials have attracted widespread attention due to their simple structure, ease of implementation, and ease of analysis. By introducing topological properties into one-dimensional periodic beams, it is possible to precisely control the localized behavior of edge and interface states in a lower dimension.

[0003] However, the fixed geometric configurations, unit cell properties, and material properties of traditional topological metamaterials limit their ability to flexibly adapt to diverse operational requirements and changing operating conditions. By introducing a tunable mechanism, precise control of the vibration energy at the desired frequency can be achieved. Common control methods in related technologies typically achieve topological state modulation by changing the material's geometry or adjusting specific design parameters. However, these methods suffer from limitations in response speed, energy efficiency, and system stability.

[0004] Therefore, it is necessary to provide a new topological state frequency adjustment method.

[0005] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present invention, and therefore may include information that does not constitute prior art known to ordinary technicians in this field. Summary of the Invention

[0006] The present disclosure provides a topological state frequency adjustment method, a topological state frequency adjustment device, a topological state frequency adjustment equipment, and a computer-readable storage medium, thereby overcoming, at least to a certain extent, the problems of slow tunable topological state response speed, high energy consumption, and low system stability caused by the limitations and defects of related technologies.

[0007] According to one aspect of the present disclosure, a topological state frequency adjustment method is provided, comprising:

[0008] Using the piezoelectric sheet as a resonator, generating a target unit structure through the unit structure of the piezoelectric sheet and the target material;

[0009] Applying periodic boundary conditions to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure;

[0010] generating a one-dimensional target system by using the target unit structure, applying displacement excitation to the one-dimensional target system, and obtaining a topological state excited in the topological band gap;

[0011] A voltage is applied to the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on the voltage.

[0012] In an exemplary embodiment of the present disclosure, the method of using a piezoelectric sheet as a resonator and generating a target unit structure through a unit structure of the piezoelectric sheet and a target material includes:

[0013] A piezoelectric plate with a cylindrical mass is fixed as a resonator on a unit structure of the target material;

[0014] A unit structure consisting of the piezoelectric piece, the cylindrical mass, and the unit structure of the target material is determined as the target unit structure.

[0015] In an exemplary embodiment of the present disclosure, applying a periodic boundary condition to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure includes:

[0016] constructing a coordinate system based on the target unit structure, and applying a periodic boundary condition to the target unit structure based on an x-axis direction of the coordinate system;

[0017] Based on the wave vector scanning of the irreducible Brillouin zone boundary in the reciprocal space, the band structure of the target unit structure is obtained; wherein the band structure includes the topological band gap.

[0018] In an exemplary embodiment of the present disclosure, after obtaining the topological band gap in the energy band structure, the method further includes:

[0019] The modes in the band structure are obtained by screening the in-plane and out-of-plane polarizations.

[0020] In an exemplary embodiment of the present disclosure, generating a one-dimensional target system using the target unit structure, applying displacement excitation to the one-dimensional target system, and obtaining a topological state excited in the topological band gap includes:

[0021] generating the one-dimensional target system by using the first target unit structure and the second target unit structure;

[0022] Setting a unit displacement excitation in the one-dimensional target system to obtain a displacement at a measurement interface and a fixed unit displacement at the excitation location, and obtaining a transmission spectrum based on the displacement at the measurement interface and the fixed unit displacement at the excitation location;

[0023] A topological state excited in the topological band gap is obtained based on the transmission spectrum.

[0024] In an exemplary embodiment of the present disclosure, in the first target unit structure and the second target unit structure, the position of the resonator is equal to the position of the unit structure, but in opposite directions.

[0025] In an exemplary embodiment of the present disclosure, applying a voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage includes:

[0026] A voltage is applied to a target unit structure included in the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on a change in the voltage.

[0027] According to one aspect of the present disclosure, a topological state frequency adjustment device is provided, comprising:

[0028] A target unit structure generation module is used to use the piezoelectric sheet as a resonator and generate a target unit structure through the unit structure of the piezoelectric sheet and the target material;

[0029] a topological band gap determination module, configured to apply periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure;

[0030] A topological state excitation module, configured to generate a one-dimensional target system using the target unit structure, and apply displacement excitation to the one-dimensional target system to obtain a topological state excited in the topological band gap;

[0031] A frequency adjustment module is used to apply a voltage to the one-dimensional target system and adjust the excitation frequency of the excited topological state based on the voltage.

[0032] According to one aspect of the present disclosure, a topological state frequency adjustment device is provided, comprising: a memory and at least one processor, wherein instructions are stored in the memory, and the at least one processor calls the instructions in the memory so that the topological state frequency adjustment device implements the topological state frequency adjustment method described in any of the above exemplary embodiments when executed.

[0033] According to one aspect of the present disclosure, a computer-readable storage medium is provided, wherein instructions are stored in the computer-readable storage medium, and when the instructions are executed by a processor, the topological state frequency adjustment method described in any of the above exemplary embodiments is implemented.

[0034] The present disclosure provides a method for adjusting the frequency of a topological state. The method uses a piezoelectric sheet as a resonator, generates a target unit structure through the unit structure of the piezoelectric sheet and a target material, applies periodic boundary conditions to the target unit structure, obtains the band structure of the unit structure and the topological band gap in the band structure, generates a one-dimensional target system using the target unit structure, sets a displacement excitation to the one-dimensional target system, obtains a topological state excited in the topological band gap, applies a voltage to the one-dimensional target system, and adjusts the excitation frequency of the excited topological state based on the voltage. On the one hand, the method uses the target unit structure to generate a one-dimensional target system, sets a displacement excitation to the one-dimensional target system, obtains a topological state excited in the topological band gap, and after obtaining the excited state, applies a voltage to the one-dimensional target system, and adjusts the excitation frequency of the excited topological state based on the voltage. This method solves the problem of needing to change the geometric structure in related technologies and improves the response speed and energy efficiency of frequency adjustment. On the other hand, while keeping the target material structure unchanged, the frequency of the topological state is quickly and accurately controlled by an external voltage, simplifying the operation and improving the flexibility of the system.

[0035] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The accompanying drawings are incorporated into and constitute a part of this specification, illustrate embodiments consistent with the present invention, and together with the description, serve to explain the principles of the present invention. Obviously, the drawings described below are only some embodiments of the present invention, and it is clear that those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0037] Figure 1 The flowchart of a topology state frequency adjustment method according to an exemplary embodiment of the present disclosure is schematically shown.

[0038] Figure 2 (a) Schematic diagram of a unit structure of a target material according to an example embodiment of the present disclosure.

[0039] Figure 2 (b) is a schematic diagram schematically showing a piezoelectric sheet according to an example embodiment of the present disclosure.

[0040] Figure 2 (c) A schematic diagram schematically illustrates a cylinder according to an exemplary embodiment of the present disclosure.

[0041] Figure 3 A flowchart schematically illustrates a method for using a piezoelectric sheet as a resonator and generating a target unit structure through the piezoelectric sheet and a unit structure of a target material according to an exemplary embodiment of the present disclosure.

[0042] Figure 4 A schematic diagram schematically illustrates a target unit structure according to an exemplary embodiment of the present disclosure.

[0043] Figure 5 A flowchart of a method for applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure according to an exemplary embodiment of the present disclosure is schematically shown.

[0044] Figure 6 A schematic diagram schematically illustrates an energy band structure of a target unit structure according to an example embodiment of the present disclosure.

[0045] Figure 7 A trend diagram schematically illustrates the influence of voltage on the frequency range of a topological bandgap according to an exemplary embodiment of the present disclosure.

[0046] Figure 8 A flowchart of a method for generating a one-dimensional target system by using the target unit structure, applying displacement excitation to the one-dimensional target system, and obtaining an excited topological state in the topological band gap according to an exemplary embodiment of the present disclosure is schematically shown.

[0047] Figure 9 A schematic diagram schematically illustrates a first target unit structure and a second target unit structure according to an exemplary embodiment of the present disclosure.

[0048] Figure 10 A schematic diagram schematically illustrates a one-dimensional target system according to an exemplary embodiment of the present disclosure.

[0049] Figure 11 A schematic diagram schematically illustrates a transmission spectrum after setting unit displacement excitation according to an exemplary embodiment of the present disclosure.

[0050] Figure 12 A trend diagram showing the influence of voltage on syntax frequency in a one-dimensional target system according to an exemplary embodiment of the present disclosure is schematically output.

[0051] Figure 13 A block diagram schematically illustrates a topology-state frequency adjustment device according to an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0052] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that the present invention will be more comprehensive and complete and the concepts of the example embodiments will be fully conveyed to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, many specific details are provided to provide a full understanding of the embodiments of the present invention. However, those skilled in the art will appreciate that the technical solutions of the present invention may be practiced while omitting one or more of the specific details, or that other methods, components, devices, steps, etc. may be employed. In other cases, well-known technical solutions are not shown or described in detail to avoid obscuring various aspects of the present invention.

[0053] In addition, the accompanying drawings are merely schematic illustrations of the present invention and are not necessarily drawn to scale. Identical reference numerals in the figures denote identical or similar parts, and thus repetitive descriptions thereof will be omitted. Some of the blocks shown in the accompanying drawings are functional entities that do not necessarily correspond to physically or logically separate entities. These functional entities may be implemented in software, in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.

[0054] Dynamic analysis of engineering structures is fundamental to structural design, high reliability, and safe operation, and is a key research area in the discipline of dynamics and control. Vibrations in structures typically propagate through elastic waves or through coupling between elastic waves and surrounding acoustic media (such as air or water). The manipulation of elastic waves is a core fundamental issue in structural vibration control. In recent decades, metamaterials, realized through carefully designed periodic structures, have demonstrated remarkable dynamic properties such as negative refraction, energy harvesting, negative Poisson's ratio, and elastic wave manipulation, becoming advanced solutions for controlling elastic waves and vibrations. Recently, topological metamaterials have been developed by incorporating symmetry breaking, phase differences, or coupling strength variations within metamaterials. By designing topological metamaterials, elastic wave energy can be localized at their boundaries and topologically protected states can be formed at these boundaries. This allows the elastic wave to reduce scattering caused by defects and disorder along the path during propagation, effectively avoiding diffusion and scattering losses. One-dimensional topological metamaterials have attracted widespread attention due to their simple structure, ease of implementation, and ease of analysis. By introducing topological properties into one-dimensional periodic beams, precise control of the localized behavior of edge states and interface states can be achieved in lower dimensions. Therefore, it is suitable for efficient energy transfer and waveguide applications in space-constrained application scenarios.

[0055] However, the fixed geometric configurations, unit cells, and material properties of traditional topological metamaterials also bring limitations, making it difficult to flexibly respond to different operational requirements and changing working conditions. By introducing a tunable mechanism, topological metamaterials can dynamically adjust their topological state characteristics through stimulation from the external environment, thereby achieving precise control of the vibration energy of the required frequency. Although a variety of methods have been proposed to achieve tunable topological states, such as thermal tuning and magnetic field tuning, these methods have shortcomings in response speed, energy efficiency, and system stability. For example, thermal tuning has a slow response and high energy consumption, while magnetic field tuning may introduce electromagnetic interference and requires complex external equipment.

[0056] In summary, one-dimensional topological metamaterials based on tunable mechanisms can effectively address multiple vibration control requirements. However, traditional tunable mechanisms are not flexible and stable enough. Existing common control methods generally rely on modifying the material's geometry or adjusting specific design parameters to achieve topological state modulation.

[0057] Based on one or more of the above problems, this example embodiment first provides a topology state frequency adjustment method, referring to Figure 1 As shown, the topological state frequency adjustment method may include the following steps:

[0058] Step S110. Using the piezoelectric sheet as a resonator, generating a target unit structure through the unit structure of the piezoelectric sheet and the target material;

[0059] Step S120: applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure;

[0060] Step S130: generating a one-dimensional target system using the target unit structure, applying displacement excitation to the one-dimensional target system, and obtaining a topological state excited in the topological band gap;

[0061] Step S140 . Applying a voltage to the one-dimensional target system, and adjusting the excitation frequency of the excited topological state based on the voltage.

[0062] The above-mentioned topological state frequency adjustment method uses a piezoelectric plate as a resonator, generates a target unit structure through the unit structure of the piezoelectric plate and the target material; applies periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure; uses the target unit structure to generate a one-dimensional target system, applies displacement excitation to the one-dimensional target system, obtains a topological state excited in the topological band gap; applies a voltage to the one-dimensional target system, and adjusts the excitation frequency of the excited topological state based on the voltage. On the one hand, using the target unit structure to generate a one-dimensional target system, applying displacement excitation to the one-dimensional target system to obtain a topological state excited in the topological band gap, and after obtaining the excited state, applying a voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage solves the problem of requiring geometric structure changes in related technologies and improves the response speed and energy efficiency of frequency adjustment. On the other hand, while maintaining the target material structure unchanged, the frequency of the topological state is quickly and accurately controlled by an external voltage, simplifying the operation and improving the flexibility of the system.

[0063] Hereinafter, each step involved in the topological state frequency adjustment method according to the exemplary embodiment of the present disclosure will be explained and illustrated in detail.

[0064] In step S110 , a piezoelectric sheet is used as a resonator, and a target unit structure is generated by using the piezoelectric sheet and a unit structure of a target material.

[0065] In this example embodiment, the target material is a one-dimensional topological mechanical metamaterial, and the unit structure of the target material, that is, the unit structure of the one-dimensional topological mechanical metamaterial, is a perforated beam. A circular piezoelectric plate with a cylindrical mass can be fixed to the hole of the perforated beam as a resonator. The perforated beam has a length a = 54 mm, a width b = 34 mm, and a height h = 4 mm. The radius of the hole in the beam is R = 13 mm. The piezoelectric plate has a thickness of 0.2 mm and a radius r m =15mm; radius r of the additional cylindrical mass s and height h s They are all 3mm and fixed on the piezoelectric piece. Figure 2 (a) shows the unit structure of the target material, Figure 2 (b) shows the piezoelectric sheet and Figure 2 (c) shows a cylinder. The material of the piezoelectric piece is PZT-5H, and the material of the cylinder is steel.

[0066] In this example embodiment, reference Figure 3 As shown, the method of using the piezoelectric sheet as a resonator and generating a target unit structure through the unit structure of the piezoelectric sheet and the target material includes:

[0067] Step S310. Fixing a piezoelectric piece with a cylindrical mass as a resonator on the unit structure of the target material;

[0068] Step S320: Determine a unit structure consisting of the piezoelectric piece, the cylindrical mass, and the unit structure of the target material as the target unit structure.

[0069] Steps S310 and S320 are further explained and illustrated below. Specifically, a piezoelectric plate fixed to a target unit of a target material, i.e., a hole of a perforated beam of a one-dimensional topological mechanical metamaterial, and a cylinder fixed to the piezoelectric plate are determined as resonators, and a unit structure composed of the resonator and the unit structure of the target material is determined as a target unit structure. Figure 4 The target unit structure of this exemplary embodiment is shown.

[0070] In step S120 , a periodic boundary condition is applied to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure.

[0071] In this example embodiment, after the target unit structure is obtained by splicing, a periodic boundary condition can be applied to the target unit structure, wherein the periodic boundary condition is to infinitely splice the target unit structure; in solid state physics, the band structure of a solid describes the energy that is prohibited or allowed to be carried by electrons, which is caused by the diffraction of quantum dynamic electron waves in a periodic lattice. The band structure of the material determines the various properties of the material. The band structure of the target unit structure includes a local resonant band gap and a topological band gap. The local resonant band gap is formed based on the local resonance mechanism, and its frequency is determined by the natural resonant frequency of the photoelectric system composed of the piezoelectric plate and the cylinder. The topological band gap is also formed by the local resonance mechanism, and its frequency is also affected by the resonant system. Therefore, a voltage can be applied to the piezoelectric plate to change the natural resonant frequency of the resonant system, thereby changing the frequency range of the topological band gap.

[0072] In this example embodiment, reference Figure 5 As shown, applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure includes:

[0073] Step S510: constructing a coordinate system based on the target unit structure, and applying a periodic boundary condition to the target unit structure based on the x-axis direction of the coordinate system;

[0074] Step S520. Scan the irreducible Brillouin zone boundary in the reciprocal space based on the wave vector to obtain the band structure of the target unit structure; wherein the band structure includes the topological band gap.

[0075] Steps S510 and S520 will be further explained and illustrated below. Specifically, a coordinate system is constructed based on the target unit structure, and a periodic boundary condition is applied to the target unit structure along the x-axis of the coordinate system. When constructing the coordinate system, the midpoint of the target unit structure can be used as the origin of the coordinate system, or the point in the lower left corner of the target unit structure can be used as the origin of the coordinate system. This is not specifically limited in this example embodiment. After applying the periodic boundary condition, the band structure of the target unit structure can be calculated based on the irreducible Brillouin zone boundary in the reciprocal space by scanning the wave vector. Figure 6 The band structure of the target unit structure is shown in Figure 6 The middle region 610 is the local resonant band gap, and the region 620 is the topological band gap. Figure 6 The points in are the modes obtained by screening.

[0076] Furthermore, after obtaining the topological band gap in the band structure, the method further includes:

[0077] The modes in the band structure are obtained by screening the in-plane and out-of-plane polarizations.

[0078] Specifically, after obtaining the band structure of the target unit structure, the topological band gap characteristics of the flexural waves in the band structure can be obtained by using the in-plane and out-plane polarization screening method. The in-plane and out-plane polarization screening formula is:

[0079] p=∫(|w| 2 dV) / ∫(|u| 2 +|V| 2 +|w| 2 )dV

[0080] Where p is the polarization factor and (u, v, w) is the displacement field within the target unit structure. When p > 0.9, the calculated mode can be considered an out-of-plane mode, that is, a bending wave mode.

[0081] In this exemplary embodiment, after the band structure of the target unit structure is obtained, no excited topological states exist within the topological band gap of the band structure, and the frequency of the topological band gap is affected by the resonant system. Therefore, a voltage can be applied to the piezoelectric plate to change the natural resonant frequency of the resonant system, thereby changing the frequency range of the topological band gap. The voltage can be applied from the bottom surface to the top surface of the piezoelectric plate. Figure 7 This is a trend diagram of the influence of the topological bandgap frequency range on voltage, based on Figure 7 It can be seen that in the voltage range of 0-100V, the topological band gap changes linearly with the voltage, and the frequency range of the topological band gap gradually moves towards high frequency as the voltage increases.

[0082] In step S130 , a one-dimensional target system is generated by using the target unit structure, and a displacement excitation is set to the one-dimensional target system to obtain a topological state excited in the topological band gap.

[0083] In this exemplary embodiment, in order to achieve a topological state with concentrated energy at the boundary, it is necessary to combine multiple target unit structures to construct a one-dimensional system. Figure 8 As shown, the method of generating a one-dimensional target system by using the target unit structure and applying displacement excitation to the one-dimensional target system to obtain a topological state excited in the topological band gap includes:

[0084] Step S810. Generate the one-dimensional target system using the first target unit structure and the second target unit structure;

[0085] Step S820: Setting a unit displacement excitation in the one-dimensional target system to obtain a displacement at a measurement interface and a fixed unit displacement at the excitation location, and obtaining a transmission spectrum based on the displacement at the measurement interface and the fixed unit displacement at the excitation location;

[0086] Step S830: Obtain the topological state excited in the topological band gap based on the transmission spectrum.

[0087] Below, steps S810 to S830 will be further explained and illustrated. Specifically, a one-dimensional target system is generated using a first target unit structure and a second target unit structure, wherein the number of the first target unit structures is the same as the number of the second target unit structures, and the number can be 10 or 15. In this example embodiment, the number of the first target unit structures and the second target unit structures is not specifically limited. The distance between the position of the resonator in the first target unit structure and the second target unit structure and the center line of the target unit structure is equal and opposite in direction, wherein the displacement between the resonator and the center line of the target unit structure can be 0, which is not specifically limited in this example embodiment. Figure 9 The first target unit structure and the second target unit structure are shown, and the generated one-dimensional target system reference Figure 10 As shown, in Figure 10 1010 is the measurement point at the interface. After forming a one-dimensional target system with an interface, in order to stimulate the topological state at the interface, a unit displacement excitation can be set in the one-dimensional target system. The unit displacement excitation can be set at the leftmost end of the one-dimensional target system. Based on the unit displacement excitation, a fixed unit displacement can be generated. Therefore, the fixed unit displacement w at the excitation point and the displacement response w at the measurement interface can be used. i , and the transmission rate is obtained

[0088]

[0089] After obtaining the transmission rate, we can get Figure 11 The transmission spectrum shown in Figure 1 is a graph of the topological bandgap frequency range. In the transmission spectrum, the peaks represented by points within the topological bandgap frequency range are the excited topological states, and the frequencies corresponding to the peaks are the frequencies at which the interface states are excited.

[0090] In step S140 , a voltage is applied to the one-dimensional target system, and the excitation frequency of the excited topological state is adjusted based on the voltage.

[0091] In this exemplary embodiment, after obtaining the excited topological state in the topological band gap, a voltage may be applied to adjust the frequency of the excited topological state in the topological band gap. The step of applying the voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage includes:

[0092] A voltage is applied to a target unit structure included in the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on a change in the voltage.

[0093] Specifically, a voltage can be applied to each piezoelectric plate in the one-dimensional target system, and the voltage variation range is 0-100V. By applying voltage to the upper and lower surfaces of the piezoelectric plate, the equivalent bending stiffness of the one-dimensional periodic perforated beam is affected, thereby affecting the excitation frequency of the topological state. Figure 12 A trend diagram of the influence of voltage on the excitation frequency in a one-dimensional target system is shown. When the voltage value is in the range of 0-100V, the excitation frequency of the topological state increases with the increase of voltage, and the trend is linear.

[0094] The topological state frequency adjustment method provided by the example embodiments of the present disclosure has at least the following advantages: on the one hand, a one-dimensional target system is generated by utilizing a target unit structure, and a displacement excitation is set to the one-dimensional target system to obtain an excited topological state in the topological band gap. After obtaining the excited state, a voltage is applied to the one-dimensional target system, and the excitation frequency of the excited topological state is adjusted based on the voltage, which solves the problem of needing to change the geometric structure in related technologies and improves the response speed and energy efficiency of the frequency adjustment; on the other hand, while keeping the target material structure unchanged, the frequency of the topological state is quickly and accurately controlled by an external voltage, which simplifies the operation and improves the flexibility of the system.

[0095] The exemplary embodiment of the present disclosure further provides a topological state frequency adjustment device, referring to Figure 13 As shown, it may include: a target unit structure generation module 1310, a topological band gap determination module 1320, a topological state excitation module 1330 and a frequency adjustment module 1340.

[0096] A target unit structure generating module 1310 is configured to use the piezoelectric sheet as a resonator and generate a target unit structure through the unit structure of the piezoelectric sheet and the target material;

[0097] A topological band gap determination module 1320 is configured to apply periodic boundary conditions to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure;

[0098] A topological state excitation module 1330 is configured to generate a one-dimensional target system using the target unit structure, apply displacement excitation to the one-dimensional target system, and obtain a topological state excited in the topological band gap;

[0099] The frequency adjustment module 1340 is configured to apply a voltage to the one-dimensional target system and adjust the excitation frequency of the excited topological state based on the voltage.

[0100] The specific details of each module in the above-mentioned topological state frequency adjustment device have been described in detail in the corresponding topological state frequency adjustment method, so they will not be repeated here.

[0101] In an exemplary embodiment of the present disclosure, the method of using a piezoelectric sheet as a resonator and generating a target unit structure through a unit structure of the piezoelectric sheet and a target material includes:

[0102] A piezoelectric plate with a cylindrical mass is fixed as a resonator on a unit structure of the target material;

[0103] A unit structure consisting of the piezoelectric piece, the cylindrical mass, and the unit structure of the target material is determined as the target unit structure.

[0104] In an exemplary embodiment of the present disclosure, applying a periodic boundary condition to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure includes:

[0105] constructing a coordinate system based on the target unit structure, and applying a periodic boundary condition to the target unit structure based on an x-axis direction of the coordinate system;

[0106] Based on the wave vector scanning of the irreducible Brillouin zone boundary in the reciprocal space, the band structure of the target unit structure is obtained; wherein the band structure includes the topological band gap.

[0107] In an exemplary embodiment of the present disclosure, after obtaining the topological band gap in the energy band structure, the method further includes:

[0108] The modes in the band structure are obtained by screening the in-plane and out-of-plane polarizations.

[0109] In an exemplary embodiment of the present disclosure, generating a one-dimensional target system using the target unit structure, applying displacement excitation to the one-dimensional target system, and obtaining a topological state excited in the topological band gap includes:

[0110] generating the one-dimensional target system by using the first target unit structure and the second target unit structure;

[0111] Setting a unit displacement excitation in the one-dimensional target system to obtain a displacement at a measurement interface and a fixed unit displacement at the excitation location, and obtaining a transmission spectrum based on the displacement at the measurement interface and the fixed unit displacement at the excitation location;

[0112] A topological state excited in the topological band gap is obtained based on the transmission spectrum.

[0113] In an exemplary embodiment of the present disclosure, in the first target unit structure and the second target unit structure, the position of the resonator is equal to the position of the unit structure, but in opposite directions.

[0114] In an exemplary embodiment of the present disclosure, applying a voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage includes:

[0115] A voltage is applied to a target unit structure included in the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on a change in the voltage.

[0116] It should be noted that, although several modules or units of the device for action execution are mentioned in the above detailed description, this division is not mandatory. In fact, according to an embodiment of the present invention, the features and functions of two or more modules or units described above can be concretized in one module or unit. Conversely, the features and functions of one module or unit described above can be further divided into multiple modules or units to be concretized.

[0117] Furthermore, although the steps of the method of the present invention are described in a particular order in the accompanying drawings, this does not require or imply that the steps must be performed in this particular order, or that all steps must be performed to achieve the desired results. Additionally or alternatively, some steps may be omitted, multiple steps may be combined into one step, and / or one step may be decomposed into multiple steps.

[0118] Those skilled in the art will appreciate that various aspects of the present invention may be implemented as systems, methods, or program products. Therefore, various aspects of the present invention may be implemented in the following forms: a complete hardware implementation, a complete software implementation (including firmware, microcode, etc.), or a combination of hardware and software implementations, which may be collectively referred to herein as "circuits," "modules," or "systems."

[0119] In an exemplary embodiment of the present invention, a topological state frequency adjustment device is further provided, the topological state frequency adjustment device comprising a memory and at least one processor, the memory storing instructions, the at least one processor calling the instructions in the memory so that the topological state frequency adjustment device performs any of the above-mentioned topological state frequency adjustment methods.

[0120] In exemplary embodiments of the present invention, a computer-readable storage medium is also provided, storing a program product capable of implementing the methods described above. In some possible implementations, various aspects of the present invention may also be implemented in the form of a program product comprising program code. When the program product is executed on a terminal device, the program code is configured to cause the terminal device to perform the steps according to various exemplary embodiments of the present invention described in the "Exemplary Methods" section above.

[0121] According to an embodiment of the present invention, a program product for implementing the above-mentioned method can be a portable compact disc read-only memory (CD-ROM) and include program code, and can be run on a terminal device, such as a personal computer. However, the program product of the present invention is not limited thereto. In this document, a readable storage medium can be any tangible medium containing or storing a program, and the program can be used by or in conjunction with an instruction execution system, apparatus, or device.

[0122] The program product may be implemented in any combination of one or more readable media. The readable medium may be a readable signal medium or a readable storage medium. The readable storage medium may be, for example, but not limited to, an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, device, or component, or any combination thereof. More specific examples (a non-exhaustive list) of readable storage media include: an electrical connection with one or more wires, a portable disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination thereof.

[0123] A computer-readable signal medium may include a data signal propagated in baseband or as part of a carrier wave, which carries readable program code. Such propagated data signals may take a variety of forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. A readable signal medium may also be any readable medium other than a readable storage medium that can transmit, propagate, or transfer a program for use by or in conjunction with an instruction execution system, apparatus, or device.

[0124] The program code contained on the readable medium may be transmitted using any appropriate medium, including but not limited to wireless, wired, optical cable, RF (Radio Frequency), etc., or any suitable combination thereof.

[0125] The program code for performing the operations of the present invention may be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java, C++, and the like, as well as conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user computing device, partially on the user device, as a stand-alone software package, partially on the user computing device and partially on a remote computing device, or entirely on a remote computing device or server. In cases involving a remote computing device, the remote computing device may be connected to the user computing device via any type of network, including a local area network (LAN) or a wide area network (WAN), or may be connected to an external computing device (e.g., via the Internet using an Internet service provider).

[0126] Furthermore, the above-described figures are merely illustrative of the processes included in the method according to exemplary embodiments of the present invention and are not intended to be limiting. It is readily understood that the processes illustrated in the above-described figures do not indicate or limit the temporal order of these processes. Furthermore, it is readily understood that these processes may be executed synchronously or asynchronously, for example, in multiple modules.

[0127] Other embodiments of the present invention will readily occur to those skilled in the art after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention that follow from the general principles of the invention and include common knowledge or customary techniques in the art not invented herein. The specification and examples are to be considered as exemplary only, with the true scope and spirit of the invention being indicated by the claims.

Claims

1. A topological state frequency adjustment method, characterized in that: include: Using the piezoelectric sheet as a resonator, generating a target unit structure through the unit structure of the piezoelectric sheet and the target material; Applying periodic boundary conditions to the target unit structure to obtain an energy band structure of the unit structure and a topological band gap in the energy band structure; generating a one-dimensional target system by using the target unit structure, applying displacement excitation to the one-dimensional target system, and obtaining a topological state excited in the topological band gap; A voltage is applied to the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on the voltage.

2. The topological state frequency adjustment method according to claim 1, characterized in that: The method of using the piezoelectric sheet as a resonator and generating a target unit structure through the piezoelectric sheet and the unit structure of the target material includes: A piezoelectric plate with a cylindrical mass is fixed as a resonator on a unit structure of the target material; A unit structure consisting of the piezoelectric piece, the cylindrical mass, and the unit structure of the target material is determined as the target unit structure.

3. The topological state frequency adjustment method according to claim 1, characterized in that: Applying periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure includes: constructing a coordinate system based on the target unit structure, and applying a periodic boundary condition to the target unit structure based on an x-axis direction of the coordinate system; Based on the wave vector scanning of the irreducible Brillouin zone boundary in the reciprocal space, the band structure of the target unit structure is obtained; wherein the band structure includes the topological band gap.

4. The topological state frequency adjustment method according to claim 3, characterized in that: After obtaining the topological band gap in the energy band structure, the method further includes: The modes in the band structure are obtained by screening the in-plane and out-of-plane polarizations.

5. The topological state frequency adjustment method according to claim 1, characterized in that: The step of generating a one-dimensional target system by using the target unit structure and applying displacement excitation to the one-dimensional target system to obtain a topological state excited in the topological band gap includes: generating the one-dimensional target system by using the first target unit structure and the second target unit structure; Setting a unit displacement excitation in the one-dimensional target system to obtain a displacement at a measurement interface and a fixed unit displacement at the excitation location, and obtaining a transmission spectrum based on the displacement at the measurement interface and the fixed unit displacement at the excitation location; A topological state excited in the topological band gap is obtained based on the transmission spectrum.

6. The topological state frequency adjustment method according to claim 5, characterized in that: In the first target unit structure and the second target unit structure, the resonator is located at the same distance from the unit structure but in opposite directions.

7. The topological state frequency adjustment method according to claim 1, characterized in that: The step of applying a voltage to the one-dimensional target system and adjusting the excitation frequency of the excited topological state based on the voltage includes: A voltage is applied to a target unit structure included in the one-dimensional target system, and an excitation frequency of the excited topological state is adjusted based on a change in the voltage.

8. A topological state frequency adjustment device, characterized in that: include: A target unit structure generation module is used to use the piezoelectric sheet as a resonator and generate a target unit structure through the unit structure of the piezoelectric sheet and the target material; a topological band gap determination module, configured to apply periodic boundary conditions to the target unit structure to obtain the band structure of the unit structure and the topological band gap in the band structure; A topological state excitation module, configured to generate a one-dimensional target system using the target unit structure, and apply displacement excitation to the one-dimensional target system to obtain a topological state excited in the topological band gap; A frequency adjustment module is used to apply a voltage to the one-dimensional target system and adjust the excitation frequency of the excited topological state based on the voltage.

9. A topological frequency adjustment device, characterized in that: The topology state frequency adjustment device includes: a memory and at least one processor, wherein the memory stores instructions, and the at least one processor calls the instructions in the memory so that the topology state frequency adjustment device executes the topology state frequency adjustment method according to any one of claims 1 to 7.

10. A computer-readable storage medium storing instructions, characterized in that: When the instructions are executed by a processor, the topology state frequency adjustment method according to any one of claims 1 to 7 is implemented.

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