An etching device based on semiconductor processing

Abstract

The present invention belongs to the technical field of semiconductor processing, and discloses an etching device based on semiconductor processing, including a support box, a processing box and an etching box. A recovery pipe is installed on the left side of the support box, one end of the recovery pipe is communicated with the processing box, the etching box is installed on the top of the support box, a liquid storage tank is installed in the inner cavity of the support box and is communicated with the processing box, a pump is installed on the right side of the liquid storage tank, and the drainage end of the pump is fixedly connected with a communicating pipe. In this device, the telescopic rod drives the second sealing plate to contract and move, opening the recovery port, so that the etched waste liquid after consumption reaction can be discharged in time, so that the etching liquid in the isolation chamber can be renewed multiple times, and each renewal will wash away the reactant residues on the surface of the wafer. This design not only maintains the stability of the pH value in the isolation chamber in time, but also reduces the concentration of reactants generated by the consumption of the etching liquid in the isolation chamber, improving the reaction rate.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor processing, and specifically relates to an etching device based on semiconductor processing. Background Art

[0002] Semiconductors are widely used in high-precision fields such as chip manufacturing and photovoltaic power generation, and are important elements driving the progress of scientific and technological life. In order to enable a wafer to have the functions of an integrated circuit, an etching device is required to etch fine geometric patterns on the surface of the wafer, thereby forming various functional units of the integrated circuit. First, a photosensitive resin (photoresist) needs to be coated on the surface of the wafer, and a mask pattern is formed through the processes of exposure and development. This pattern determines which areas will be retained and which areas will be etched away; the etching process: after the mask is prepared, the etching device starts to work. Currently, etching includes wet etching and dry etching, and the more commonly used one is wet etching: the wafer is placed in a container filled with a chemical solution, and the chemical solution reacts with the surface of the wafer to corrode and consume the part of the wafer surface without the coated photoresist, thereby achieving the etching function; however, in the prior art, when the wafer is placed in the chemical solution, there are problems of low reaction rate and high production of chemical waste liquid. Since the immersion method is adopted, the chemical solution reacts with the wafer surface in a passive contact manner, the molecular structure movement degree in the chemical solution is low, and the reaction rate with the wafer surface is not high. Moreover, as the reaction progresses, the concentration of acidic substances in the chemical solution decreases, the concentration of reactants increases, and the pH value cannot be stably maintained in a suitable reaction range. The chemically concentrated solution is easily contaminated by the silicate mixture generated by the reaction, forming chemical waste liquid and increasing the difficulty of treating the chemical waste liquid. Therefore, it is urgent to solve. Summary of the Invention

[0003] The purpose of the present invention is to provide an etching device based on semiconductor processing to solve the problems raised in the above background art.

[0004] To achieve the above object, the present invention provides the following technical solution: An etching device based on semiconductor processing, comprising a support box, a processing box and an etching box. A recovery pipe is installed on the left side of the support box, one end of the recovery pipe is communicated with the processing box, the etching box is installed on the top of the support box, a liquid storage tank is installed in the inner cavity of the support box and is communicated with the processing box, a pump is installed on the right side of the liquid storage tank, the drainage end of the pump is fixedly connected with a communication pipe, one end of the communication pipe is communicated with the etching box, an etching groove is opened on the top of the etching box, a plurality of groups of placement grooves are horizontally and equidistantly opened on the inner wall of the etching groove, wafers are placed inside the placement grooves, a plurality of groups of liquid passing ports and drainage grooves which are horizontally and equidistantly distributed are opened at the bottom of the etching groove, the liquid passing ports and the placement grooves are staggered with each other, a transfer cavity located below the liquid passing ports is opened inside the etching box, the transfer cavity is communicated with the liquid passing ports, a heater is installed on the inner wall of the transfer cavity, a plurality of groups of partition plates are fixedly installed on the inner wall of the etching groove, the partition plates are communicated and arranged at the top of the liquid passing ports, a plurality of groups of drainage ports are opened on the side of the partition plate facing the wafer, a first sealing plate is hermetically clamped on the inner wall of the partition plate, a plurality of groups of liquid inlet grooves are opened on the side surface of the first sealing plate, the drainage ports and the liquid inlet grooves are distributed in an up-and-down alternating and staggered manner, a replenishment port communicated with the transfer cavity is opened on the right side of the etching box, a second spring is elastically connected to the right side of the inner wall of the heater, one end of the second spring is elastically connected to a connecting block, and a sealing block is fixedly connected to the right side of the connecting block, and the sealing block is adapted to abut against the replenishment port.

[0005] As a preferred solution of the present invention, the number of each group of the drainage grooves is two, and they are symmetrically distributed on both sides of each group of the wafers. The bottom opening of the drainage groove penetrates downward to the bottom of the etching box and is communicated with the inner cavity of the support box.

[0006] As a preferred solution of the present invention, a recovery port communicated with the bottom opening of the drainage groove is opened on the top of the support box, a telescopic rod is fixedly installed on the top of the rear side of the inner wall of the support box, the telescopic end of the telescopic rod is fixedly connected with a second sealing plate, and the top of the second sealing plate abuts against the bottom of the inner wall of the support box and seals the recovery port.

[0007] As a preferred solution of the present invention, a plurality of groups of first springs are elastically connected between the bottom of the inner wall of the partition plate and the top of the first sealing plate, and both the liquid inlet grooves and the drainage ports are located above the surface of the wafer.

[0008] As a preferred solution of the present invention, the inner cavity of the etching groove is equally divided into isolation chambers with the same number as the wafers by a plurality of groups of partition plates, and the isolation chambers are communicated with the inner cavity of the support box through the drainage grooves.

[0009] As a preferred embodiment of the present invention, the second spring is stretched and disposed between the connecting block and the inner wall of the transfer cavity. The sealing block is spherical in shape, and the diameter value of the sealing block is greater than the inner diameter value of the replenishing port.

[0010] As a preferred embodiment of the present invention, the longitudinal cross-sectional shape of the second sealing plate is "L" shaped, and the horizontal part of the second sealing plate is wider than the front-back spacing of the inner wall of the recovery port.

[0011] As a preferred embodiment of the present invention, the liquid storage tank is made of Teflon, and there is a gap between the left side of the liquid storage tank and the left side of the inner wall of the support tank.

[0012] The beneficial effects of the present invention are as follows:

[0013] 1. The device is redesigned to achieve staged output of the etching solution, and ensure that the etching solution output each time is immediately discharged after being consumed by etching, so as to keep the etching solution used for wafer etching always at the optimal concentration and optimal pH value. By providing multiple sets of placement grooves on the inner wall of the etching tank, multiple sets of wafers can be arranged parallel to each other and horizontally equidistantly. The multiple sets of placement grooves are isolated by multiple sets of isolation plates, and multiple sets of isolation chambers are formed on the inner wall of the etching tank by the isolation plates, ensuring that the etching solution in each isolation chamber only acts on one side of each set of wafers. By providing a first sealing plate in the inner cavity of the isolation plate that is sealingly abutted against the inner wall of the isolation plate, the etching solution from the pump and the liquid storage tank continuously flows into the inner cavity of the isolation plate, and automatically pushes the first sealing plate upward to move, so that a certain area of overlap is formed between the liquid inlet groove and the liquid discharge port, and the etching solution is vertically sprayed onto the surface of the wafer. When the etching solution first enters the isolation chamber, the upper side of the wafer surface is etched and rinsed by impact, and the liquid level of the etching solution gradually submerges the wafer to complete the full immersion of the wafer. Subsequently, the second sealing plate is driven by the telescopic rod to contract and move, opening the recovery port, so that the etched waste liquid after consumption reaction is discharged in time, so that the etching solution in the isolation chamber can be replaced multiple times, and each replacement will wash away the reactant residues on the wafer surface. This design not only maintains the stability of the pH value in the isolation chamber in time, but also reduces the concentration of reactants generated by the consumption of the etching solution in the isolation chamber, and improves the reaction rate.

[0014] 2. The device is provided with a connecting block and a sealing block on the right side of the inner wall of the transfer chamber. Under the stretching action of the second spring, it firmly abuts against the opening of the replenishment port. When the pump stops running, the sealing block that loses the positive pressure thrust of the etching solution will maintain the sealed abutting state with the replenishment port. At the same time, the first spring arranged on the inner wall of the partition plate will drive the first sealing plate to reset and block the liquid discharge port, preventing the etching solution in the transfer chamber and the inner cavity of the partition plate from entering the isolation chamber. At this time, the inner cavities of the transfer chamber and the partition plate are connected to form a transfer area for sealing and placing the etching solution. The transfer area is heated by a heater so that the etching solution can be preheated to 60°C - 100°C therein. And the amount of etching solution in the transfer area is very small, thus reducing the power consumption of the device.

[0015] 3. The device also realizes the function of recovering the residual temperature of the etching solution by placing the liquid storage tank inside the support box. The liquid storage tank made of a special heat-conducting material contains the etching solution, and the etching waste liquid in the isolation chamber is introduced into the inner cavity of the support box through the liquid discharge groove. At this time, more and more chemical waste liquid accumulates in the inner cavity of the support box, and the liquid storage tank is immersed therein, so that the heat of the chemical waste liquid is transferred to the etching solution through the liquid storage tank, realizing heat recovery and further reducing the energy consumption of the heater. Description of the Drawings

[0016] Figure 1 is the front three-dimensional schematic diagram of the overall structure of the present invention;

[0017] Figure 2 is the front sectional schematic diagram of the overall structure of the present invention;

[0018] Figure 3 is of the present invention Figure 2 the enlarged schematic diagram of the structure at A in;

[0019] Figure 4 is of the present invention Figure 2 the enlarged schematic diagram of the structure at B in;

[0020] Figure 5 is the side sectional schematic of the support box and the etching box of the present invention Figure 1 ;

[0021] Figure 6 is of the present invention Figure 5 the enlarged schematic diagram of the structure at C in;

[0022] Figure 7 is the separation schematic diagram of the etching box, the wafer, the partition plate, the first spring, the first sealing plate and the heater of the present invention;

[0023] Figure 8 is the side sectional schematic of the support box and the etching box of the present invention Figure 2 ;

[0024] Figure 9This is a top - down external view schematic diagram of the overall structure of the present invention.

[0025] In the figure: 1, support box; 2, processing box; 3, etching box; 4, pump; 5, connecting pipe; 6, etching groove; 7, placement groove; 8, wafer; 9, isolation plate; 10, liquid discharge port; 11, first spring; 12, first sealing plate; 13, liquid inlet groove; 14, liquid passing port; 15, transfer cavity; 16, heater; 17, replenishment port; 18, connecting block; 19, sealing block; 20, second spring; 21, liquid discharge groove; 22, liquid storage tank; 23, recovery pipe; 24, second sealing plate; 25, recovery port; 26, telescopic rod. Detailed implementation manners

[0026] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0027] As Figures 1 to 9 shown, the embodiment of the present invention provides an etching device based on semiconductor processing, including a support box 1, a processing box 2 and an etching box 3. A recovery pipe 23 is installed on the left side of the support box 1, and one end of the recovery pipe 23 is communicated with the processing box 2. The etching box 3 is installed on the top of the support box 1. A liquid storage tank 22 is installed in the inner cavity of the support box 1 and is communicated with the processing box 2. A pump 4 is installed on the right side of the liquid storage tank 22. The drainage end of the pump 4 is fixedly connected with a connecting pipe 5, and one end of the connecting pipe 5 is communicated with the etching box 3. An etching groove 6 is opened at the top of the etching box 3. A plurality of groups of placement grooves 7 are horizontally and equidistantly opened on the inner wall of the etching groove 6. A wafer 8 is placed inside the placement groove 7. A plurality of groups of liquid passing ports 14 and liquid discharge grooves 21 which are horizontally and equidistantly distributed are opened at the bottom of the etching groove 6. The liquid passing ports 14 are staggered with the placement grooves 7. A transfer cavity 15 located below the liquid passing ports 14 is opened inside the etching box 3. The transfer cavity 15 is communicated with the liquid passing ports 14. A heater 16 is installed on the inner wall of the transfer cavity 15. A plurality of groups of isolation plates 9 are fixedly installed on the inner wall of the etching groove 6. The isolation plates 9 are communicated and arranged at the top of the liquid passing ports 14. A plurality of groups of liquid discharge ports 10 are opened on the side of the isolation plate 9 facing the wafer 8. A first sealing plate 12 is hermetically clamped on the inner wall of the isolation plate 9. A plurality of groups of liquid inlet grooves 13 are opened on the side surface of the first sealing plate 12. The liquid discharge ports 10 and the liquid inlet grooves 13 are distributed in an up - down alternating and staggered manner. A replenishment port 17 communicated with the transfer cavity 15 is opened on the right side of the etching box 3. The right side of the inner wall of the heater 16 is elastically connected with a second spring 20. One end of the second spring 20 is elastically connected with a connecting block 18. The right side of the connecting block 18 is fixedly connected with a sealing block 19. The sealing block 19 is adapted to abut against the replenishment port 17;

[0028] This device has been redesigned to achieve staged output of the etching solution, and ensure that the etching solution output each time is immediately discharged after being consumed in etching, so as to keep the etching solution for wafer 8 etching always at the optimal concentration and optimal pH value. By arranging multiple groups of placement grooves 7 on the inner wall of the etching tank 6, multiple groups of wafers 8 can be parallel to each other and horizontally equidistantly distributed. The multiple groups of placement grooves 7 are isolated by multiple groups of partition plates 9, and multiple groups of isolation chambers are formed on the inner wall of the etching tank 6 through the partition plates 9, ensuring that the etching solution in each isolation chamber only acts on one side of each group of wafers 8. By providing a sealing plate one 12 in the inner cavity of the partition plate 9 that is hermetically abutted against the inner wall of the partition plate 9, the etching solution from the pump 4 and the liquid storage tank 22 continuously flows into the inner cavity of the partition plate 9, and automatically pushes the sealing plate one 12 upward to move, so that a certain area can overlap between the liquid inlet groove 13 and the liquid discharge port 10, and the etching solution is vertically sprayed onto the surface of the wafer 8. When the etching solution just enters the isolation chamber, the upper side of the surface of the wafer 8 is etched and rinsed by means of impact, and the liquid level of the etching solution gradually submerges the wafer 8 to complete the full immersion of the wafer 8. Subsequently, the telescopic rod 26 drives the sealing plate two 24 to contract and move, opening the recovery port 25, so that the etched waste liquid after consumption reaction can be discharged in time, so that the etching solution in the isolation chamber can be renewed multiple times, and each renewal will wash away the reactant residues on the surface of the wafer 8. This design not only timely maintains the stability of the pH value in the isolation chamber, but also reduces the concentration of reactants generated by the consumption of the etching solution in the isolation chamber, improving the reaction rate.

[0029] Among them, the number of each group of drain grooves 21 is two, and they are symmetrically distributed on both sides of each group of wafers 8. The bottom opening of the drain groove 21 penetrates downward through the bottom of the etching box 3 and communicates with the inner cavity of the support box 1;

[0030] The drain groove 21 communicates with the isolation chamber upward and communicates with the inner cavity of the support box 1 downward. When the recovery port 25 is opened under the contraction action of the telescopic rod 26 and the sealing plate two 24, the etched waste liquid in the isolation chamber that has been etched and consumed can flow downward along the drain groove 21 into the inner cavity of the support box 1.

[0031] Among them, the support box 1 is provided with a recovery port 25 at the top that communicates with the bottom opening of the drain groove 21. A telescopic rod 26 is fixedly installed at the top of the rear side of the inner wall of the support box 1. The telescopic end of the telescopic rod 26 is fixedly connected with a sealing plate two 24. The top of the sealing plate two 24 abuts against the bottom of the inner wall of the support box 1 and seals the recovery port 25;

[0032] The recovery port 25 is the top opening of the support box 1, which is responsible for receiving the chemical waste liquid that has been etched and consumed in the isolation chamber guided by the drain groove 21. By providing a telescopic rod 26 to drive the sealing plate two 24 to abut against the top of the inner wall of the support box 1, the opening and closing of the drain groove 21 are realized.

[0033] Among them, a plurality of first springs 11 are elastically connected between the bottom of the inner wall of the partition plate 9 and the top of the first sealing plate 12, and the liquid inlet groove 13 and the liquid discharge port 10 are both located above the surface of the wafer 8;

[0034] The first springs 11 are elastically connected to the first sealing plate 12 downward, so that the initial position of the first sealing plate 12 is biased downward, and the liquid discharge port 10 and the liquid inlet groove 13 are designed to be vertically staggered and sealed. This design is responsible for driving the first sealing plate 12 to reset downward through the first springs 11 after the pump 4 stops starting, and making the liquid discharge port 10 and the liquid inlet groove 13 stagger again and automatically seal.

[0035] Among them, the inner cavity of the etching tank 6 is equally divided into isolation chambers with the same number as the wafer 8 by a plurality of partition plates 9, and the isolation chambers are communicated with the inner cavity of the support box 1 through the liquid discharge grooves 21;

[0036] The partition plate 9 divides the inner cavity of the etching tank 6 into multiple groups of isolation chambers, and each group of isolation chambers can be filled with etching liquid, so that the etching liquid concentrations, reaction rates, and etching degrees in each group of isolation chambers are equal.

[0037] Among them, the second spring 20 is stretched and arranged between the connecting block 18 and the inner wall of the transfer cavity 15. The sealing block 19 is spherical, and the diameter value of the sealing block 19 is greater than the inner diameter value of the replenishing port 17;

[0038] In this device, by providing the connecting block 18 and the sealing block 19 located on the right side of the inner wall of the transfer cavity 15, under the stretching action of the second spring 20, it firmly abuts against the opening of the replenishing port 17. When the pump 4 stops running, the sealing block 19 that loses the positive pressure thrust of the etching liquid will maintain the sealed abutting state with the replenishing port 17. At the same time, the first spring 11 provided on the inner wall of the partition plate 9 will drive the first sealing plate 12 to reset and block the liquid discharge port 10, preventing the etching liquid in the inner cavities of the transfer cavity 15 and the partition plate 9 from entering the isolation chamber. At this time, the inner cavities of the transfer cavity 15 and the partition plate 9 are communicated to form a transfer area for sealing and placing the etching liquid. This transfer area is heated by the heater 16, so that the etching liquid can be preheated to 60°C - 100°C therein. And the amount of etching liquid in the transfer area is very small, thus reducing the power consumption of the device.

[0039] Among them, the longitudinal section shape of the second sealing plate 24 is "L" - shaped, and the horizontal part of the second sealing plate 24 is wider than the front - to - back distance of the inner wall of the recovery port 25;

[0040] The "L" - shaped design of the second sealing plate 24 enables it to not only abut against the inner wall of the support box 1 upward, but also the horizontal part can be connected to the telescopic end of the telescopic rod 26, facilitating the sealing and opening / closing operation of the recovery port 25.

[0041] Among them, the liquid storage tank 22 is made of Teflon, and there is a gap between the left side of the liquid storage tank 22 and the left side of the inner wall of the support box 1;

[0042] The device also realizes the function of recovering the residual temperature of the etching solution by placing the liquid storage tank 22 inside the support tank 1. The liquid storage tank 22 made of special heat-conducting material contains the etching solution, and the etching waste liquid in the isolation chamber is introduced into the inner cavity of the support tank 1 through the drain groove 21. At this time, more and more chemical waste liquid accumulates in the inner cavity of the support tank 1, and the liquid storage tank 22 is immersed in it, so that the heat of the chemical waste liquid is transferred to the etching solution through the liquid storage tank 22, realizing heat recovery and further reducing the energy consumption of the heater 16.

[0043] Working principle:

[0044] First, check the device and ensure that the second sealing plate 24 blocks the recovery port 25. Use the manipulator to vertically place multiple groups of wafers 8 in different wafers 8 respectively. Start the pump 4, and pump the etching solution in the liquid storage tank 22 upward to the transfer cavity 15 through the connecting pipe 5. As Figure 4 shown, the etching solution from the pump 4 and the connecting pipe 5 flushes the sealing block 19 to the left and drives the connecting block 18 to stretch the second spring 20, thereby opening the replenishment port 17, making the connecting pipe 5 communicate with the inner cavity of the transfer cavity 15. The etching solution starts to enter the inner cavity of the transfer cavity 15 and gradually fills the transfer cavity 15, and then enters the inner cavity of the isolation plate 9 upward along the liquid passing port 14;

[0045] Then, turn on the heater 16 and heat the etching solution located in the transfer cavity 15 to keep the temperature of the etching solution between 60°C and 100°C. When the heated etching solution gradually fills the inner cavity of the isolation plate 9, since the first sealing plate 12 abuts and seals against the inner wall of the isolation plate 9, and the drain port 10 and the liquid inlet groove 13 are distributed in a vertically staggered state, at this time, the entire first sealing plate 12 is subjected to an upward hydraulic thrust under the state of continuous influx of the etching solution into the inner cavity of the isolation plate 9, and continuously moves upward, compressing the first spring 11 until there is an overlapping part between the liquid inlet groove 13 and the drain port 10, indicating that the drain port 10 and the liquid inlet groove 13 are communicated. At this time, the etching solution sprays horizontally along the axis of the liquid inlet groove 13 onto the surface of the wafer 8. Since the wafer 8 is vertically arranged in the placement groove 7, the etching solution vertically shoots at the upper side position of the surface of the wafer 8 and reacts with the surface of the wafer 8 for etching. When the liquid level of the etching solution in the isolation chamber exceeds the upper part of the wafer 8, the pump 4 stops pumping the etching solution into the transfer cavity 15. The first sealing plate 12 without the flow thrust of the etching solution moves downward under the action of the first spring 11 and resets. At this time, the liquid inlet groove 13 and the drain port 10 are staggered, and the inner cavity of the isolation plate 9 is sealed and isolated from the isolation chamber;

[0046] Finally, when the etching solution in the isolation chamber is consumed, the concentration of the silicate mixture therein increases, the pH value increases, and it is no longer suitable for the etching work on the surface of the wafer 8. At this time, the telescopic rod 26 is started and contracted, driving the second sealing plate 24 to move backward, opening the recovery port 25, and recovering the etching solution in the isolation chamber along the drain tank 21 to the inner cavity of the support box 1. At this time, the chemical waste liquid entering the support box 1 still has residual heat, which can transfer the heat to the liquid storage tank 22 and preheat the etching solution in the liquid storage tank 22. The chemical waste liquid that has completed the heat exchange enters the treatment box 2 through the recovery pipe 23 for recovery treatment. After the etching solution in the isolation chamber is drained, the pump 4 is started continuously, and the next wave of etching solution is sent into the isolation chamber.

[0047] It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements not only includes those elements, but also includes other elements not expressly listed, or also includes elements inherent to such process, method, article or device.

[0048] Although the embodiments of the present invention have been shown and described, those of ordinary skill in the art can understand that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. An etching device based on semiconductor processing, comprising a support box (1), a processing box (2) and an etching box (3), wherein a recovery pipe (23) is installed on the left side of the support box (1), one end of the recovery pipe (23) is connected to the processing box (2), and the etching box (3) is installed on the top of the support box (1), characterized in that: The inner cavity of the support box (1) is provided with a liquid storage box (22) and is connected to the processing box (2). A pump (4) is installed on the right side of the liquid storage box (22). A connecting pipe (5) is fixedly connected to the drainage end of the pump (4). One end of the connecting pipe (5) is connected to the etching box (3). An etching groove (6) is provided on the top of the etching box (3). The inner wall of the etching groove (6) is provided with a plurality of groups of placement grooves (7) at equal intervals horizontally. A wafer (8) is placed inside the placement groove (7), a plurality of groups of liquid passage ports (14) and liquid drainage grooves (21) are provided at the bottom of the etching groove (6) and are horizontally and equidistantly distributed, the liquid passage ports (14) and the placement groove (7) are interlaced with each other, a transfer chamber (15) is provided inside the etching box (3) and is located below the liquid passage ports (14), the transfer chamber (15) is communicated with the liquid passage ports (14), and a reinforcing member is installed on the inner wall of the transfer chamber (15). The heater (16) comprises a plurality of isolation plates (9) fixedly mounted on the inner wall of the etching groove (6), the isolation plates (9) being connected and arranged at the top of the liquid port (14), the isolation plates (9) being provided with a plurality of drainage ports (10) on the side facing the wafer (8), the inner wall of the isolation plate (9) being sealed and clamped with a sealing plate 1 (12), the side of the sealing plate 1 (12) being provided with a plurality of liquid inlet grooves (13), the drainage ports (10) and the liquid inlet grooves (13) being alternately arranged up and down, the right side of the etching box (3) being provided with a replenishing port (17) connected with the transfer chamber (15), the right side of the inner wall of the heater (16) being elastically connected with a spring 2 (20), one end of the spring 2 (20) being elastically connected with a connecting block (18), the right side of the connecting block (18) being fixedly connected with a sealing block (19), the sealing block (19) being adapted to abut against the replenishing port (17).

2. The etching equipment based on semiconductor processing according to claim 1, characterized in that: The number of drainage grooves (21) in each group is two, and they are symmetrically distributed on both sides of each group of wafers (8). The bottom opening of the drainage grooves (21) penetrates downward to the bottom of the etching box (3) and is connected to the inner cavity of the support box (1).

3. The etching equipment based on semiconductor processing according to claim 2, characterized in that: The top of the support box (1) is provided with a recovery port (25) which is in communication with the bottom opening of the drainage trough (21); a telescopic rod (26) is fixedly installed on the top of the rear side of the inner wall of the support box (1); the telescopic end of the telescopic rod (26) is fixedly connected to a sealing plate 2 (24); the top of the sealing plate 2 (24) abuts against the bottom of the inner wall of the support box (1) and forms a seal for the recovery port (25).

4. The etching equipment based on semiconductor processing according to claim 3, characterized in that: A plurality of groups of springs (11) are elastically connected between the bottom of the inner wall of the isolation plate (9) and the top of the sealing plate (12), and the liquid inlet groove (13) and the liquid outlet (10) are both located on the upper side of the surface of the wafer (8).

5. The etching equipment based on semiconductor processing according to claim 4, characterized in that: The inner cavity of the etching groove (6) is divided into isolation chambers of the same number as the wafers (8) at equal distances by a plurality of isolation plates (9), and the isolation chambers are connected to the inner cavity of the support box (1) via a drainage trough (21).

6. The etching equipment based on semiconductor processing according to claim 5, characterized in that: The second spring (20) is stretched and arranged between the connecting block (18) and the inner wall of the transfer chamber (15); the sealing block (19) is in the shape of a sphere; and the diameter of the sealing block (19) is greater than the inner diameter of the supplementary port (17).

7. The etching equipment based on semiconductor processing according to claim 6, characterized in that: The longitudinal section of the second sealing plate (24) is in an "L" shape, and the horizontal portion of the second sealing plate (24) is wider than the front-to-back spacing of the inner wall of the recovery port (25).

8. The etching equipment based on semiconductor processing according to claim 7, characterized in that: The liquid storage box (22) is made of Teflon, and a gap is left between the left side of the liquid storage box (22) and the left side of the inner wall of the support box (1).

Images