A microstrip line design method, apparatus, device and medium

Abstract

The application discloses a microstrip line design method, device and equipment and a medium, relates to the microwave and radio frequency engineering field, and the microstrip line design method comprises the following steps: determining the dielectric constant of the microstrip line according to the substrate material of the microstrip line; determining the target source impedance and the target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow line segment of the microstrip line; the target load impedance corresponds to the impedance at the end of the wide line segment of the microstrip line; performing three-section impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance of the microstrip line at different positions; wherein the three-section impedance transformation comprises linear function transformation for the wide line segment, exponential function transformation for the narrow line segment, and Clopper-Peniston function transformation for the intermediate segment outside the wide line segment and the narrow line segment; and determining the width of the microstrip line at different positions according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

Description

Technical Field

[0001] The present invention relates to the field of microwave and radio frequency engineering, and in particular to a design method, device, equipment and medium for a microstrip line. Background Art

[0002] In the field of microwave and RF engineering, a characteristic is that when designing RF amplifier circuits, in order to reduce reflection and loss of signals during transmission, it is usually necessary to use specific impedance matching technology to improve the impedance mismatch problem between ports and components. Microstrip lines, as a basic transmission line structure, are widely used in high-frequency impedance matching.

[0003] Microstrip lines achieve impedance matching through a continuous impedance gradient region. However, existing microstrip line designs often result in a mismatch between the impedance at the microstrip line port and the actual target impedance, which in turn causes a sudden impedance change at the port, leading to signal reflection and loss.

[0004] Therefore, how to design a microstrip line so that the impedance at the port of the microstrip line matches the target impedance actually required becomes a technical problem that those skilled in the art urgently need to solve. Summary of the Invention

[0005] In view of the above-mentioned technical status, the present invention provides a design method, device, equipment and medium of a microstrip line.

[0006] In order to achieve the above object, the present invention provides the following technical solutions:

[0007] A microstrip line design method, comprising:

[0008] Determining the dielectric constant of the microstrip line according to the substrate material of the microstrip line;

[0009] Determining a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line;

[0010] Performing a three-segment impedance transformation on the target source impedance and the target load impedance to determine characteristic impedances at different positions of the microstrip line; wherein the three-segment impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the intermediate segment between the wide line segment and the narrow line segment;

[0011] The width of the microstrip line at different positions is determined according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

[0012] In an optional embodiment of the present application, performing three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance at different positions of the microstrip line includes:

[0013] performing a Kloppenstein function transformation on the target source impedance and the target load impedance to determine intermediate characteristic impedances at different positions of the intermediate segment;

[0014] Performing a linear function transformation on the maximum value of the intermediate characteristic impedance and the target load impedance to determine first characteristic impedances at different positions of the wide line segment;

[0015] An exponential function transformation is performed on the minimum value of the intermediate characteristic impedance and the target source impedance to determine the second characteristic impedances at different positions of the narrow line segment.

[0016] In an optional embodiment of the present application, the Kloppenstein function transformation is expressed by the following formula:

[0017]

[0018] Wherein, Z0(z) represents the intermediate characteristic impedance at different positions of the intermediate segment; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents the different positions of the intermediate segment; l1 represents the length of the intermediate segment; U(x) represents the unit transition function; C = cos h -1 [ln(Z L / Z S ) / Γ m ], where Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant, and Z0 represents the intermediate characteristic impedance.

[0019] In an optional implementation manner of the present application, the linear function transformation is expressed by the following formula:

[0020] Z0(z)=Z m +(Z L -Z m )z / l2;

[0021] Wherein, Z0(z) represents the first characteristic impedance at different positions of the wide line segment; Z m Represents the maximum value of the intermediate characteristic impedance; Z L represents the target load impedance; z represents the different positions of the middle segment; l2 represents the length of the wide line segment.

[0022] In an optional embodiment of the present application, the exponential function transformation is represented by the following formula:

[0023] Z0(z)=Z S e az ;

[0024] Wherein, Z0(z) represents the second characteristic impedance of different positions of the narrow line segment; z represents different positions of the intermediate segment; Z S represents the target source impedance; a represents a transformation coefficient, and the size of a is related to the length of the narrow line segment.

[0025] In an optional embodiment of the present application, the width of the microstrip line at different positions is determined according to the characteristic impedance and the dielectric constant at different positions of the microstrip line, and is realized by the following formula:

[0026]

[0027] Wherein, W represents the width of the microstrip line; ε r represents the dielectric constant; h represents the thickness of the microstrip line; Z0 represents the characteristic impedance;

[0028] Compared with the prior art, the design method of the microstrip line provided by the present application performs three-stage impedance transformation on the target source impedance and the target load impedance, compensates for the difference between the impedance at the port of the microstrip line constructed by the Kroenig-Poster function transformation and the actual target impedance through linear function transformation and exponential function transformation, can solve the problem of impedance step at the port while meeting the better port reflection coefficient, and can prevent the occurrence of oscillation problem to a certain extent.

[0029] The present application also provides a design device of a microstrip line, comprising:

[0030] A dielectric constant determination unit is configured to determine the dielectric constant of the microstrip line according to the substrate material of the microstrip line.

[0031] A target impedance determination unit is configured to determine the target source impedance and the target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow line segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide line segment of the microstrip line.

[0032] an impedance transformation unit, configured to perform a three-segment impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedances at different positions of the microstrip line; wherein the three-segment impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the intermediate segment between the wide line segment and the narrow line segment;

[0033] The width design unit is used to determine the width of the microstrip line at different positions according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

[0034] Compared with the prior art, the beneficial effects of the microstrip line design device provided by the present invention are the same as the beneficial effects of the microstrip line design method described in the above technical solution, and are not described in detail here.

[0035] The present invention further provides an electronic device, comprising:

[0036] processor;

[0037] a memory for storing instructions executable by the processor;

[0038] The processor is configured to execute the above-mentioned microstrip line design method by running instructions in the memory.

[0039] Compared with the prior art, the beneficial effects of the electronic device provided by the present invention are the same as the beneficial effects of the microstrip line design method described in the above technical solution, and will not be described in detail here.

[0040] The present invention also provides a computer storage medium, wherein instructions are stored in the computer storage medium. When the instructions are executed, the above-mentioned microstrip line design method is implemented.

[0041] Compared with the prior art, the beneficial effects of the computer storage medium provided by the present invention are the same as the beneficial effects of the microstrip line design method described in the above technical solution, and are not described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0043] Figure 1 A flow chart of a microstrip line design method provided in an embodiment of the present application;

[0044] Figure 2 A schematic structural diagram of a portion of a microstrip line according to an embodiment of the present application;

[0045] Figure 3A schematic diagram of the reflection coefficient at a microstrip line port provided in an embodiment of the present application;

[0046] Figure 4 A structural diagram of a microstrip line design device provided in an embodiment of the present application;

[0047] Figure 5 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0048] To facilitate a clear description of the technical solutions of the embodiments of the present invention, the words "first" and "second" are used in the embodiments of the present invention to distinguish between identical or similar items with substantially the same functions and effects. For example, the first threshold and the second threshold are merely used to distinguish between different thresholds and do not limit their order. Those skilled in the art will understand that the words "first" and "second" do not limit the quantity or execution order, and the words "first" and "second" do not necessarily mean different.

[0049] It should be noted that, in the present invention, words such as "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the present invention should not be construed as being preferred or advantageous over other embodiments or designs. Rather, the use of words such as "exemplary" or "for example" is intended to present the relevant concepts in a concrete manner.

[0050] In the present invention, "at least one" refers to one or more, and "more" refers to two or more. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: the existence of A alone, the existence of A and B at the same time, and the existence of B alone, where A and B can be singular or plural. The character " / " generally indicates that the previous and next associated objects are in an "or" relationship. "At least one of the following items" or similar expressions refers to any combination of these items, including any combination of single items or plural items. For example, at least one of a, b or c can represent: a, b, c, the combination of a and b, the combination of a and c, the combination of b and c, or the combination of a, b and c, where a, b, c can be single or multiple.

[0051] In the field of microwave and RF engineering, a characteristic is that when designing RF amplifier circuits, in order to reduce reflection and loss of signals during transmission, it is usually necessary to use specific impedance matching technology to improve the impedance mismatch problem between ports and components. Microstrip lines, as a basic transmission line structure, are widely used in high-frequency impedance matching.

[0052] Microstrip lines achieve impedance matching through a continuous impedance gradient region. However, existing microstrip line designs often result in a mismatch between the impedance at the microstrip line port and the actual target impedance, which in turn causes a sudden impedance change at the port, leading to signal reflection and loss.

[0053] Therefore, how to design a microstrip line so that the impedance at the port of the microstrip line matches the target impedance actually required becomes a technical problem that those skilled in the art urgently need to solve.

[0054] In view of the above-mentioned technical status, the present application provides a design method, device, equipment and medium for a microstrip line, which are described in detail one by one in the following embodiments.

[0055] Please refer to Figure 1 , Figure 1 A flow chart of a microstrip line design method provided in an embodiment of the present application.

[0056] like Figure 1 As shown, the microstrip line design method includes the following S101 to S104:

[0057] S101 , determining a dielectric constant of the microstrip line according to a substrate material of the microstrip line.

[0058] A microstrip line is a common planar transmission line used extensively in microwave and radio frequency circuits. It consists of a conductor (usually copper) and a ground plane, sandwiched between a dielectric layer. Microstrip lines primarily transmit high-frequency signals and play a vital role in radio frequency circuits such as antennas, filters, couplers, and amplifiers.

[0059] Please refer to Figure 2 , Figure 2 This is a schematic structural diagram of a portion of the microstrip line according to an embodiment of the present application.

[0060] like Figure 2 As shown, the width of the microstrip line gradually decreases from end Z1 to end Z2. Accordingly, the impedance of Z1 is smaller than the impedance of end Z2.

[0061] S102, determining a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line.

[0062] The target source impedance refers to the internal impedance of the signal source, including the combination of its own components, such as resistance, inductance, and capacitance. The source impedance determines the power the signal source can provide and the matching between the signal source and the transmission line. If the source impedance does not match the characteristic impedance of the transmission line, signal reflections will occur, affecting signal transmission efficiency and system stability.

[0063] The target source impedance refers to the impedance of the end Z2 of the narrow line segment of the microstrip line, and the target load impedance refers to the impedance of the end Z1 of the wide line segment of the microstrip line.

[0064] As shown in FIG. 1, in the embodiment of the present application, the target source impedance refers to the impedance of the end Z2 of the narrow line segment of the microstrip line, and the target load impedance refers to the impedance of the end Z1 of the wide line segment of the microstrip line. Figure 1

[0065] S103, performing three-section impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedance of different positions of the microstrip line; wherein the three-section impedance transformation includes performing linear function transformation on the wide line segment, performing exponential function transformation on the narrow line segment, and performing Clopens function transformation on the middle segment outside the wide line segment and the narrow line segment.

[0066] In the prior art, the impedance of the microstrip line is usually transformed by an impedance transformation function (i.e., Clopens function) for the whole microstrip line.

[0067] Specifically, the function expression of the Clopens function is shown in the following formula (1):

[0068]

[0069] wherein Z0(z) represents the characteristic impedance of different positions of the microstrip line; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents different positions of the microstrip line; l represents the length of the microstrip line; U(x) represents a unit transition function; C=cos h -1 [ln(Z L / Z S ) / Γ m ], wherein Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant, and Z0 represents the middle characteristic impedance.

[0070] Further, after the impedance transformation to obtain the characteristic impedance of different positions of the microstrip line, the width of the different positions of the microstrip line can be calculated in combination with the characteristic impedance of the different positions. ​

[0071] Specifically, the width of the microstrip line at different positions can be determined by the following formula (2):

[0072]

[0073] Wherein, W represents the width of the microstrip line; ε r represents the dielectric constant; h represents the thickness of the microstrip line; Z0 represents the characteristic impedance;

[0074] However, the width of the microstrip line calculated in this way will cause the actual impedance of the final microstrip line to be different from the target load impedance and the target source impedance. For example, assuming that a microstrip line with a target source impedance of 50Ω and a target load impedance of 5Ω is to be designed, the final source impedance of the microstrip line obtained by the above method may be 40Ω, and the load impedance may be 10Ω. In other words, the impedance at the port of the microstrip line obtained in this way is abrupt.

[0075] In order to avoid impedance surges at the ports of the microstrip line, the above S103 includes the following S1 to S3:

[0076] S1, performing Kloppenstein function transformation on the target source impedance and the target load impedance to determine the intermediate characteristic impedances at different positions of the intermediate segment;

[0077] S2, performing a linear function transformation on the maximum value of the intermediate characteristic impedance and the target load impedance to determine the first characteristic impedances at different positions of the wide line segment;

[0078] S3, performing exponential function transformation on the minimum value of the intermediate characteristic impedance and the target source impedance to determine second characteristic impedances at different positions of the narrow line segment.

[0079] That is, first, based on the existing method, the target source impedance and the target load impedance are transformed by the Kroppenstein function to obtain the intermediate characteristic impedance at both ends of the finally designed microstrip line (that is, the maximum and minimum values ​​of the intermediate characteristic impedance). Then, a section of the microstrip line is fitted through the linear transformation function to make up for the difference between the maximum value of the intermediate characteristic impedance and the target load impedance, and another section of the microstrip line is fitted through the exponential transformation function to make up for the difference between the minimum value of the intermediate characteristic impedance and the target source impedance.

[0080] Specifically, for the above S1, the process of performing the Kloppenstein function transformation on the target source impedance and the target load impedance is substantially the same as the process of performing the Kloppenstein function transformation by formula (1) in the above prior art. Specifically, it can be expressed by the following formula (3):

[0081]

[0082] wherein Z0(z) represents the intermediate characteristic impedance at different positions of the intermediate section; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents the hyperbolic function; z represents different positions of the intermediate section; l1 represents the length of the intermediate section; U(x) represents the unit transition function; C = cos h -1 [ln(Z L / Z S ) / Γ m ], wherein Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant, and Z0 represents the intermediate characteristic impedance.

[0083] For the above S2, the linear function transformation can be represented by the following formula (4):

[0084] Z0(z) = Z m +(Z L -Z m )z / l2 (4);

[0085] wherein Z0(z) represents the first characteristic impedance at different positions of the wide line section; Z m represents the maximum value of the intermediate characteristic impedance; Z L represents the target load impedance; z represents different positions of the intermediate section; l2 represents the length of the wide line section.

[0086] For the above S3, the exponential function transformation can be represented by the following formula (5):

[0087] Z0(z) = Z S e az ;

[0088] wherein Z0(z) represents the second characteristic impedance at different positions of the narrow line section; z represents different positions of the intermediate section; Z S represents the target source impedance; a represents a transformation coefficient, and the size of a is related to the length of the narrow line section.

[0089] Finally, after obtaining the intermediate characteristic impedance, the first characteristic impedance, and the second characteristic impedance at different positions of the microstrip line, the following S104 can be performed.

[0090] S104 , determining the width of the microstrip line at different positions according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

[0091] That is, by combining the above formula (2), the widths of the microstrip line at different positions are determined, and then a complete microstrip line is designed.

[0092] Furthermore, in the actual application process, a microstrip line with a target source impedance of 50Ω and a target load impedance of 5Ω is designed by the above method, and its reflection coefficient is finally tested as follows: Figure 3 As shown, Figure 3 A schematic diagram of the reflection coefficient at a microstrip line port provided in an embodiment of the present application.

[0093] like Figure 3 As shown, within the ultra-wideband (3GHz to 10GHz), the reflection coefficient of the microstrip line is less than -20dB. That is to say, the design method of the microstrip line provided in the embodiment of the present application can achieve a result of smaller reflection at the port within the broadband.

[0094] In summary, the microstrip line design method provided in the embodiment of the present application performs a three-stage impedance transformation on the target source impedance and the target load impedance. Through linear function transformation and exponential function transformation, the difference between the impedance at the microstrip line port constructed by the Kroppenstein function transformation and the actual target impedance is compensated. It can solve the problem of impedance step at the port while satisfying a good reflection coefficient at the port, and prevent the occurrence of oscillation problems to a certain extent.

[0095] This application also provides a microstrip line design device, please refer to Figure 4 , Figure 4 This is a structural diagram of the microstrip line design device provided in an embodiment of the present application.

[0096] like Figure 4 As shown, the microstrip line design device includes:

[0097] A dielectric constant determining unit 401 is configured to determine the dielectric constant of the microstrip line according to a substrate material of the microstrip line;

[0098] The target impedance determination unit 402 is configured to determine a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line.

[0099] an impedance transformation unit 403 configured to perform a three-segment impedance transformation on the target source impedance and the target load impedance to determine characteristic impedances at different positions of the microstrip line; wherein the three-segment impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the intermediate segment between the wide line segment and the narrow line segment;

[0100] The width design unit 404 is configured to determine the width of the microstrip line at different locations according to the characteristic impedance and the dielectric constant at different locations of the microstrip line.

[0101] In an optional embodiment of the present application, performing three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedances at different positions of the microstrip line includes:

[0102] performing a Kloppenstein function transformation on the target source impedance and the target load impedance to determine intermediate characteristic impedances at different positions of the intermediate segment;

[0103] Performing a linear function transformation on the maximum value of the intermediate characteristic impedance and the target load impedance to determine first characteristic impedances at different positions of the wide line segment;

[0104] An exponential function transformation is performed on the minimum value of the intermediate characteristic impedance and the target source impedance to determine the second characteristic impedances at different positions of the narrow line segment.

[0105] In an optional embodiment of the present application, the Kloppenstein function transformation is expressed by the following formula:

[0106]

[0107] Wherein, Z0(z) represents the intermediate characteristic impedance at different positions of the intermediate segment; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents the different positions of the intermediate segment; l1 represents the length of the intermediate segment; U(x) represents the unit transition function; C = cos h -1 [ln(Z L / Z S ) / Γ m ], where Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant, and Z0 represents the intermediate characteristic impedance.

[0108] In an optional implementation manner of the present application, the linear function transformation is expressed by the following formula:

[0109] Z0(z)=Z m +(Z L -Z m )z / l2;

[0110] Wherein, Z0(z) represents the first characteristic impedance at different positions of the wide line segment; Z m Represents the maximum value of the intermediate characteristic impedance; Z L represents the target load impedance; z represents the different positions of the middle segment; l2 represents the length of the wide line segment.

[0111] In an optional implementation manner of the present application, the exponential function transformation is expressed by the following formula:

[0112] Z0(z)=Z S e az ;

[0113] Wherein, Z0(z) represents the second characteristic impedance at different positions of the narrow segment; z represents different positions of the middle segment; Z S represents the target source impedance; a represents the transformation coefficient, and the size of a is related to the length of the narrow line segment.

[0114] In an optional embodiment of the present application, the width of the microstrip line at different positions is determined according to the characteristic impedance and the dielectric constant at different positions of the microstrip line, and is implemented by the following formula:

[0115]

[0116] Wherein, W represents the width of the microstrip line; ε r represents the dielectric constant; h represents the thickness of the microstrip line; Z0 represents the characteristic impedance;

[0117] The above-mentioned device embodiment provided in this embodiment and the method embodiment of this application belong to the same application concept. For technical details not fully described in this embodiment, please refer to the specific processing content of the microstrip line design method provided in the above-mentioned embodiment of this application, and will not be repeated here.

[0118] The present application also provides an electronic device, such as Figure 5 As shown, Figure 5 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0119] like Figure 5 As shown, the electronic device includes:

[0120] Processor 210;

[0121] a memory 200 for storing instructions executable by the processor 210;

[0122] The processor 210 is configured to execute the microstrip line design method disclosed in any of the above embodiments by running instructions in the memory 200 .

[0123] The processor 210, the memory 200, the communication interface 220, the input device 230 and the output device 240 are interconnected via a bus.

[0124] A bus may include a pathway that transfers information between components of a computer system.

[0125] Processor 210 can be a general-purpose processor, such as a general-purpose central processing unit (CPU), a microprocessor, or the like, or an application-specific integrated circuit (ASIC), or one or more integrated circuits for controlling the execution of the program of the present invention. Alternatively, it can be a digital signal processor (DSP), an application-specific integrated circuit (ASIC), a field-programmable gate array (FPGA), or other programmable logic device, discrete gate or transistor logic device, or discrete hardware components.

[0126] The processor 210 may include a main processor, and may also include a baseband chip, a modem, and the like.

[0127] The memory 200 stores a program for executing the technical solution of the present invention, and may also store an operating system and other key services. Specifically, the program may include program code, which may include computer operating instructions. More specifically, the memory 200 may include read-only memory (ROM), other types of static storage devices that can store static information and instructions, random access memory (RAM), other types of dynamic storage devices that can store information and instructions, disk storage, flash, etc.

[0128] The input device 230 may include a device for receiving data and information input by a user, such as a keyboard, a mouse, a camera, a scanner, a touch screen, etc.

[0129] Output device 240 may include devices that allow information to be output to a user, such as a display screen, printer, speakers, etc.

[0130] The communication interface 220 may include any device such as a transceiver to communicate with other devices or communication networks, such as Ethernet, a radio access network (RAN), a wireless local area network (WLAN), etc.

[0131] The processor 210 executes the program stored in the memory 200 and calls other devices, and can be used to implement each step of any microstrip line design method provided in the above embodiments of the present application.

[0132] In addition to the above methods and devices, embodiments of the present application may also be computer program products, which include computer program instructions, which, when executed by a processor, enable the processor to execute the steps in the microstrip line design method of various embodiments of the present application.

[0133] The computer program product may be written in any combination of one or more programming languages ​​to implement the program code for performing the operations of the embodiments of the present application, including object-oriented programming languages ​​such as Java, C++, and conventional procedural programming languages ​​such as "C" or similar programming languages. The program code may be executed entirely on the user's computing device, partially on the user's computing device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server.

[0134] In addition, an embodiment of the present application may also be a storage medium on which a computer program is stored, and the computer program is used by a processor to execute the steps in the microstrip line design method of various embodiments of the present application.

[0135] For the sake of simplicity, the aforementioned method embodiments are described as a series of action combinations. However, those skilled in the art should be aware that this application is not limited by the order of the actions described, because according to this application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in this specification are all preferred embodiments, and the actions and modules involved are not necessarily required by this application.

[0136] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similarities between the various embodiments can be referred to in conjunction with each other. For device embodiments, since they are generally similar to method embodiments, their description is relatively simple, and for relevant details, reference can be made to the description of the method embodiments.

[0137] The steps in the methods of each embodiment of the present application can be adjusted in sequence, merged, and deleted according to actual needs, and the technical features recorded in each embodiment can be replaced or combined.

[0138] The modules and sub-modules in the devices and terminals in the various embodiments of the present application can be merged, divided, and deleted according to actual needs.

[0139] In the several embodiments provided in this application, it should be understood that the disclosed terminals, devices, and methods can be implemented in other ways. For example, the terminal embodiments described above are merely illustrative. For example, the division of modules or submodules is merely a logical function division. In actual implementation, there may be other division methods, such as multiple submodules or modules can be combined or integrated into another module, or some features can be ignored or not executed. In addition, the mutual coupling or direct coupling or communication connection shown or discussed can be an indirect coupling or communication connection through some interface, device or module, which can be electrical, mechanical or other forms.

[0140] The modules or submodules described as separate components may or may not be physically separate, and the components of the modules or submodules may or may not be physical modules or submodules, that is, they may be located in one place or distributed across multiple network modules or submodules. Some or all of the modules or submodules may be selected to achieve the purpose of this embodiment according to actual needs.

[0141] In addition, each functional module or submodule in each embodiment of the present application may be integrated into a processing module, or each module or submodule may exist physically separately, or two or more modules or submodules may be integrated into a single module. The above-mentioned integrated modules or submodules may be implemented in the form of hardware or software functional modules or submodules.

[0142] Professionals may further appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, computer software, or a combination of the two. In order to clearly illustrate the interchangeability of hardware and software, the above description has generally described the components and steps of each example according to their functions. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professionals and technicians may use different methods to implement the described functions for each specific application, but such implementation should not be considered beyond the scope of this application.

[0143] The steps of the methods or algorithms described in conjunction with the embodiments disclosed herein may be implemented directly using hardware, software units executed by a processor, or a combination of the two. The software units may be placed in random access memory (RAM), internal memory, read-only memory (ROM), electrically programmable ROM, electrically erasable programmable ROM, registers, hard disk, removable disk, CD-ROM, or any other form of storage medium known in the art.

[0144] Finally, it should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or device comprising the element.

[0145] The above description of the disclosed embodiments will enable those skilled in the art to implement or use the present application. Various modifications to these embodiments will be apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present application. Therefore, the present application is not limited to the embodiments shown herein, but is to be construed in the widest manner consistent with the principles and novel features disclosed herein.

Claims

1. A method for designing a microstrip line, characterized in that: include: Determining the dielectric constant of the microstrip line according to the substrate material of the microstrip line; Determining a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line; Performing a three-segment impedance transformation on the target source impedance and the target load impedance to determine characteristic impedances at different positions of the microstrip line; wherein the three-segment impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the intermediate segment between the wide line segment and the narrow line segment; The width of the microstrip line at different positions is determined according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

2. The method according to claim 1, characterized in that The performing three-stage impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedances at different positions of the microstrip line includes: performing a Kloppenstein function transformation on the target source impedance and the target load impedance to determine intermediate characteristic impedances at different positions of the intermediate segment; Performing a linear function transformation on the maximum value of the intermediate characteristic impedance and the target load impedance to determine first characteristic impedances at different positions of the wide line segment; An exponential function transformation is performed on the minimum value of the intermediate characteristic impedance and the target source impedance to determine the second characteristic impedances at different positions of the narrow line segment.

3. The method according to claim 2, characterized in that The Kloppenstein function transformation is expressed by the following formula: Wherein, Z0(z) represents the intermediate characteristic impedance at different positions of the intermediate segment; Z S represents the target source impedance; Z L represents the target load impedance; h represents the thickness of the microstrip line; represents a transcendental function; z represents the different positions of the intermediate segment; l1 represents the length of the intermediate segment; U(x) represents the unit transition function; C = cos h -1 [ln(Z L / Z S ) / Γ m ], where Γ m represents the maximum reflection coefficient; ε r represents the dielectric constant, and Z0 represents the intermediate characteristic impedance.

4. The method according to claim 2, characterized in that The linear function transformation is expressed by the following formula: Z0(z)=Z m +(Z L -WITH m )z / l2; Wherein, Z0(z) represents the first characteristic impedance at different positions of the wide line segment; Z m Represents the maximum value of the intermediate characteristic impedance; Z L represents the target load impedance; z represents the different positions of the middle segment; l2 represents the length of the wide line segment.

5. The method according to claim 2, characterized in that The exponential function transformation is expressed by the following formula: Z0(z)=Z S e az ; Wherein, Z0(z) represents the second characteristic impedance at different positions of the narrow segment; z represents different positions of the middle segment; Z S represents the target source impedance; a represents the transformation coefficient, and the size of a is related to the length of the narrow line segment.

6. The method according to claim 1, characterized in that The width of the microstrip line at different positions is determined according to the characteristic impedance and the dielectric constant at different positions of the microstrip line, and is achieved by the following formula: Wherein, W represents the width of the microstrip line; ε r represents the dielectric constant; h represents the thickness of the microstrip line; Z0 represents the characteristic impedance; 7. A microstrip line design device, characterized in that: include: a dielectric constant determining unit, configured to determine the dielectric constant of the microstrip line according to a substrate material of the microstrip line; A target impedance determination unit, configured to determine a target source impedance and a target load impedance of the microstrip line; wherein the target source impedance corresponds to the impedance at the end of the narrow segment of the microstrip line; and the target load impedance corresponds to the impedance at the end of the wide segment of the microstrip line; an impedance transformation unit, configured to perform a three-segment impedance transformation on the target source impedance and the target load impedance to determine the characteristic impedances at different positions of the microstrip line; wherein the three-segment impedance transformation includes: performing a linear function transformation on the wide line segment, performing an exponential function transformation on the narrow line segment, and performing a Clopenstein function transformation on the intermediate segment between the wide line segment and the narrow line segment; The width design unit is used to determine the width of the microstrip line at different positions according to the characteristic impedance of the microstrip line at different positions and the dielectric constant.

8. An electronic device, characterized in that: include: processor; a memory for storing instructions executable by the processor; The processor is configured to execute the microstrip line design method according to any one of claims 1 to 6 by running instructions in a memory.

9. A computer storage medium, characterized in that The computer storage medium stores instructions, and when the instructions are executed, the microstrip line design method according to any one of claims 1 to 6 is executed.

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