A multi-absorption band ultra-wideband non-reflection notch antenna

Abstract

The present invention is a multi-absorption band ultra-wideband non-reflection notch antenna, the antenna comprising a dielectric substrate (1), a microstrip line (2), a transition structure (3), a resistor-inductor branch (4), a Vivaldi antenna (5) and a folded dipole (6); the transition structure realizes broadband matching from the microstrip line to the Vivaldi antenna; the resistor-inductor branch connected in parallel realizes absorption of low-frequency echo reflection of the antenna to form a low-frequency absorption band; the folded dipole is distributed between two antenna arms of the Vivaldi antenna to realize an absorption band without reflection notch within the working frequency band. The ultra-wideband end-fire antenna has multiple absorption bands, absorbs notch frequency bands and low-frequency echo reflections, reduces the influence of echo reflections on the overall performance of the system, such as reducing the nonlinear distortion caused by echo reflections, and reducing the influence of reflections on the stability of the pre-amplifier.

Description

Technical Field

[0001] The invention relates to an ultra-wideband antenna, in particular to a multi-absorption-band ultra-wideband non-reflection notch antenna. Background Art

[0002] In applications such as ultra-narrow pulse or ultra-high rate communication, the system is required to have an ultra-wide working bandwidth, and the ultra-wide working frequency bands of these systems usually overlap with the working frequency bands of some wireless communication systems, such as 2.4 / 5GHz wireless local area networks, so the ultra-wideband transceiver system needs to present notch characteristics for the frequency bands with interference to suppress narrowband interference. Adding notch filters to ultra-wideband systems is the most common practice, but this will make the system design more complicated, increase cost and size.

[0003] Ultra-wideband notch antennas can suppress narrowband interference in a specific frequency band without introducing additional notch filters. Existing ultra-wideband notch antennas usually load reflective structures on the antenna feed or radiation aperture to achieve notch characteristics, but the reflected echo in the notch frequency band will affect the performance of the entire system. For example, the echo will affect the stability of the amplifier in the front-stage transmission channel, introduce additional interference due to system nonlinearity, and couple to the receiving channel to introduce additional spurious. Summary of the invention

[0004] Technical problem: The purpose of the present invention is to propose a multi-absorption band ultra-wideband non-reflection notch antenna to solve the following technical problems: (1) The notch antenna has a non-reflection notch characteristic, which suppresses narrowband interference in a specific frequency band while reducing echo reflection at the notch; (2) The notch antenna has multiple non-reflection absorption bands, not only in the working frequency band of the antenna, but also in the low frequency band outside the working frequency band, and also has an absorption effect on the echo reflection in this frequency band. The invention can work in an ultra-wideband, achieve interference suppression in a specific frequency band, and reduce the impact of echo reflection on the system.

[0005] Technical solution: A multi-absorption band ultra-wideband non-reflection trap antenna of the present invention comprises a dielectric substrate, and a microstrip line, a transition structure, a resistor and inductor branch, a Vivaldi antenna and a plurality of bent dipoles located on the dielectric substrate; one end of the microstrip line is connected to a feeding port, and the other end is connected to the transition structure; the transition structure comprises an upper metal layer and a lower metal layer; the resistor and inductor branch comprises a grounding metal layer, an inductor, a resistor, and a pad, the grounding metal layer is connected to the grounding surface of the microstrip line through a metallized via, one end of the inductor is connected to the grounding metal layer, and the other end is connected to the pad; one end of the resistor is connected to the pad, and the other end is connected to the transition structure; the resistor and inductor branch is connected in parallel to the microstrip line and the transition structure; the Vivaldi antenna consists of a first antenna arm and a second antenna arm, and the first antenna arm and the second antenna arm are both symmetrically arranged on the upper surface of the dielectric substrate; the first antenna arm is connected to the upper metal layer, and the second antenna arm is coupled and connected to the lower metal layer through a broadband coupling unit; the bent dipole is distributed between the first antenna arm and the second antenna arm, and is located on the upper surface of the dielectric substrate, and a load is also arranged in the bent dipole.

[0006] One end of the upper metal layer of the transition structure is connected to the microstrip line, and the other end is connected to the first antenna arm; one end of the lower metal layer of the transition structure is connected to the ground plane of the microstrip line, and the other end is located at the projection position of the bottom surface of the dielectric substrate below the broadband coupling unit; the transition structure realizes broadband matching from the microstrip line to the Vivaldi antenna; by adjusting the width of the upper metal layer and the lower metal layer, the matching effect and bandwidth from the microstrip line to the Vivaldi antenna can be adjusted.

[0007] The resistor and inductor branch described above can adjust the parasitic effects of the resistor and inductor, and adjust the absorption effect and frequency band of the low-frequency echo of the antenna by changing the size of the resistor and inductor and adjusting the size of the grounding metal layer and the pad; by adjusting the resistance value of the resistor and the inductance value and the access position of the resistor and inductor branch and the transition structure, it is also possible to adjust the absorption effect and frequency band of the low-frequency echo of the antenna, thereby achieving absorption of the low-frequency echo of the antenna.

[0008] The broadband coupling unit can adjust the matching effect and bandwidth from the microstrip line to the Vivaldi antenna by changing its shape characteristics and size.

[0009] The bent dipole is also provided with a load, which is located at the point where the current of the bent dipole is maximum. Adjusting the shape and opening size of the bent dipole can adjust the coupling effect of the bent dipole after bending, and further adjust the absorption effect and frequency band of the antenna trap.

[0010] The bent dipole can change its operating frequency by adjusting its length, thereby adjusting the frequency band of the antenna without reflection notch; by loading bent dipoles of different lengths between the first antenna arm and the second antenna arm of the Vivaldi antenna, multiple absorption bands without reflection notch can be realized in the antenna operating frequency band.

[0011] There are multiple bent dipoles, and adjusting their number can adjust the absorption effect on the antenna trap; loading multiple bent dipoles between the first antenna arm and the second antenna arm of the Vivaldi antenna, or changing their arrangement and distribution can change the mutual coupling effect between the bent dipoles, thereby adjusting the absorption effect and frequency band of the antenna trap.

[0012] The load can adjust the absorption effect and frequency band at the antenna notch by adjusting its impedance value, and using resistors, inductors or capacitors with different packages as loads can adjust the parasitic effect to cope with the influence of the absorption effect and frequency band.

[0013] The ultra-wideband non-reflective notch antenna with multiple absorption bands is fed through a microstrip line. After the electromagnetic wave signal is fed from the microstrip line, it passes through the transition structure and the resistor and inductor branch and enters the Vivaldi antenna for ultra-wideband end-fire radiation. The transition structure realizes the transition from the quasi-transverse electromagnetic wave (quasi-TEM) mode of the microstrip line to the quasi-TEM mode of the input port of the Vivaldi antenna. For the high-frequency signal fed into the antenna, the resistor and inductor branch connected in parallel presents a high-resistance state, and the high-frequency component does not flow into the branch, while the low-frequency component will flow into the branch and be consumed by the resistor, so the antenna can absorb low-frequency echo reflections and realize a low-frequency absorption band outside the antenna working band. Vivaldi The first antenna arm of the Vivaldi antenna is directly connected to the transition structure, and the second antenna arm is not directly connected to the transition structure, but is coupled to the transition structure through a broadband coupling unit, so that the signal of the transition structure can be fed into the Vivaldi antenna; the Vivaldi antenna has an ultra-wideband end-fire radiation characteristic; a bent dipole is distributed between the two antenna arms of the Vivaldi antenna, the bent dipole is terminated with a load, and is matched with the polarization of the electromagnetic waves radiated by the Vivaldi antenna, so the bent dipole can receive the electromagnetic waves at the operating frequency and absorb and dissipate them through the terminated load, so that the antenna can achieve a reflection-free notch absorption band at a specific frequency band in the operating frequency band.

[0014] Beneficial effect: The beneficial effect of the present invention is that the proposed multi-absorption-band ultra-wideband non-reflection notch antenna can realize non-reflection notch characteristics in a specified frequency band, suppressing the narrowband interference of the notch frequency band; reducing the influence of the notch frequency band and low-frequency echo reflection on the overall performance of the system during transmission, such as reducing the influence of echo reflection on the stability of the amplifier in the front-stage transmitting channel, and reducing the additional interference introduced due to the nonlinearity of the system, and reducing the spurious introduced by the echo coupling to the receiving channel; at the same time, the antenna has an ultra-wideband end-fire radiation characteristic, supporting various ultra-wideband applications; and the antenna is simple in design and compact in structure, and the absorption structure does not increase the size of the antenna additionally, so the cost is low, which is conducive to the expansion of applications such as antenna arrays. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the overall structure of the multi-absorption band ultra-wideband non-reflection notch antenna of the present invention.

[0016] Figure 2 It is a structural schematic diagram of a microstrip line, a transition structure, a resistance and inductance branch and a broadband coupling unit of the multi-absorption band ultra-wideband non-reflection notch antenna of the present invention.

[0017] Figure 3 It is a schematic diagram of the top and bottom structures of the multi-absorption-band ultra-wideband non-reflection notch antenna of the present invention, the left picture is the top surface, and the right picture is the bottom surface.

[0018] Figure 4 It is a schematic diagram of the gain variation with frequency in the end-fire direction of the multi-absorption-band ultra-wideband non-reflection notch antenna provided by an embodiment of the present invention.

[0019] Figure 5 These are the E-plane and H-plane gain directivity diagrams of the multi-absorption-band ultra-wideband non-reflection notch antenna provided by an embodiment of the present invention at different frequencies, with the left diagram showing the E-plane and the right diagram showing the H-plane.

[0020] Figure 6 It is a schematic diagram of the change in reflection coefficient of the multi-absorption-band ultra-wideband non-reflection notch antenna with respect to frequency provided by an embodiment of the present invention.

[0021] The figure includes: a dielectric substrate 1, a microstrip line 2, a ground plane 21 of the microstrip line, a transition structure 3, a resistor and inductor branch 4, a Vivaldi antenna 5, a bent dipole 6, an upper metal layer 31, a lower metal layer 32, a grounded metal layer 41, an inductor 42, a resistor 43, a pad 44, a first antenna arm 51, a second antenna arm 52, a load 61, and a broadband coupling unit 521. DETAILED DESCRIPTION

[0022] The specific implementation of the present invention is further described below in conjunction with the accompanying drawings and embodiments. The specific embodiments described herein are only used to explain the present invention and cannot limit the present invention by the specific embodiments.

[0023] The embodiment adopted by the present invention is:

[0024] The multi-absorption band ultra-wideband non-reflection trap antenna comprises a dielectric substrate 1, a microstrip line 2, a transition structure 3, a resistor and inductor branch 4, a Vivaldi antenna 5 and a bent dipole 6 located on the dielectric substrate 1; the conducting strip of the microstrip line 2 is located on the upper surface of the dielectric substrate 1, the ground plane 21 of the microstrip line is located on the lower surface of the dielectric substrate 1, one end of the microstrip line 2 is connected to the feeding port, and the other end is connected to the transition structure 3; the transition structure 3 is composed of an upper metal layer 31 and a lower metal layer 32, the upper metal layer 31 is located on the upper surface of the dielectric substrate 1, the lower metal layer 32 is located on the lower surface of the dielectric substrate 1, one end of the upper metal layer 31 is connected to the conducting strip of the microstrip line 2, and the other end is connected to the first antenna arm 51, one end of the lower metal layer 32 is connected to the ground plane 21 of the microstrip line, and the other end is located at the projection position of the bottom surface of the dielectric substrate 1 below the broadband coupling unit 521, and the transition structure 3 realizes broadband matching of the signal from the microstrip line 2 to the Vivaldi antenna 5; the resistor and inductor branch 4 is composed of a ground metal layer 41, an inductor 21 and a ground plane 21 of the microstrip line. The inductor 42, the resistor 43 and the pad 44 are composed of the grounding metal layer 41 connected to the grounding surface 21 of the microstrip line through the metallized via. One end of the inductor 42 is connected to the grounding metal layer 41, and the other end is connected to the pad 44. One end of the resistor 43 is connected to the pad 44, and the other end is connected to the transition structure 3, so as to absorb the low-frequency echo reflection of the antenna and realize the low-frequency absorption band outside the antenna working frequency band. The Vivaldi antenna 5 is composed of a first antenna arm 51 and a second antenna arm 52. The first antenna arm 51 is directly connected to the transition structure 3, and the second antenna arm 52 is not directly connected to the transition structure 3, but is coupled and connected through a broadband coupling unit 521. The bent dipole 6 is distributed between the first antenna arm 51 and the second antenna arm 52 of the Vivaldi antenna 5 and is located on the upper surface of the dielectric substrate 1. The bent dipole 6 is also provided with a load 61 for absorbing the frequency component corresponding to the working frequency of the bent dipole 6 radiated by the Vivaldi antenna 5, so as to realize the absorption band without reflection notch in the antenna working frequency band.

[0025] The present invention is described in detail below with reference to the accompanying drawings and embodiments.

[0026] For the sake of clarity and convenience in expression and description, Figure 1 , Figure 2 and Figure 3 The multi-absorption band ultra-wideband non-reflection notch antenna structure shown is described as a specific implementation method, and the present invention is not limited to this specific antenna structure.

[0027] The multi-absorption band ultra-wideband non-reflection notch antenna is fed through a microstrip line 2. After the electromagnetic wave signal is fed from the microstrip line 2, it passes through a transition structure 3 and a resistor-inductor branch 4 and enters a Vivaldi antenna 5 for ultra-wideband end-fire radiation; the transition structure 3 flips the electric field polarization direction from perpendicular to the top surface of the dielectric substrate 1 to parallel to the upper surface of the dielectric substrate 1, realizing a 90° flip transition of the electric field polarization direction, and polarization matching the quasi-TEM mode of the microstrip line 2 with the signal mode fed into the Vivaldi antenna 5; the resistor-inductor branch 4 is connected in parallel to the transition structure 3, and presents a high-impedance state for the high-frequency signal fed in, so that the high-frequency component does not flow into the branch, while the low-frequency component flows into the branch and is consumed by the resistor, so The antenna can absorb low-frequency echo reflections and realize a low-frequency absorption band outside the antenna working frequency band; the two antenna arms of the Vivaldi antenna 5 are connected to the transition structure 3, so the signal of the transition structure 3 can be fed into the Vivaldi antenna 5, and the Vivaldi antenna 5 has an ultra-wideband end-fire radiation characteristic; a bent dipole 6 is distributed between the two antenna arms of the Vivaldi antenna 5, and a load 61 is provided in the bent dipole 6, and the load 61 is matched with the polarization of the electromagnetic waves radiated by the Vivaldi antenna 5, so the bent dipole 6 can receive the electromagnetic waves at the working frequency and absorb and dissipate them through the load 61, so that the antenna realizes a reflection-free notch absorption band at a specific frequency band in the working frequency band.

[0028] The upper metal layer 31 and the lower metal layer 32 of the transition structure 3 are both quadrilateral metal strips. By adjusting the width of the upper metal layer 31 and the lower metal layer 32 at both ends, the matching effect and bandwidth from the microstrip line 2 to the Vivaldi antenna 5 can be adjusted. In this embodiment, the upper metal layer 31 of the transition structure 3 is a right-angled trapezoid, and the bottom width where it is connected to the microstrip line 2 guide strip is 1.8 mm, and the bottom width where it is connected to the first antenna arm 51 is 2 mm. The lower metal layer 32 is a trapezoid, and the bottom width where it is connected to the ground plane of the microstrip line 2 is 1.8 mm, and the other bottom width is 4.6 mm. The transition structure 3 realizes broadband matching from the microstrip line 2 to the Vivaldi antenna 5, so that the reflection coefficient of the antenna is lower than -10 dB in the frequency band range of 3 GHz to 12 GHz.

[0029] For the resistor and inductor branch 4, by changing the size of the resistor 43 and the inductor 42 and adjusting the size of the ground metal layer 41 and the pad 44, the parasitic effect of the resistor 43 and the inductor 42 can be adjusted, and the absorption effect and frequency band of the low-frequency echo of the antenna can be adjusted. By adjusting the resistance value of the resistor 43 and the inductance value of the inductor 42 and the connection position of the resistor and inductor branch 4 and the transition structure 3, the absorption effect and frequency band of the low-frequency echo of the antenna can be adjusted. In this embodiment, the package of the resistor 43 and the inductor 42 is 0201 The size of the connecting solder joint is 0.5mm×0.7mm, the size of the ground is 3mm×4.5mm, the resistance value of the resistor 43 is 50Ω, the inductance value of the inductor 42 is 5nH, and the position where the resistor and inductor branch 4 is connected to the upper metal layer 31 in the transition structure 3 is 1.3mm away from the connection between the upper metal layer 31 and the microstrip line 2. The resistor and inductor branch 4 can realize a low-frequency absorption band outside the antenna working frequency band, so that the reflection coefficient of the antenna in the DC~3GHz frequency band is also lower than -10dB.

[0030] By changing the shape characteristics and size of the broadband coupling unit 521, the matching effect and bandwidth of the microstrip line 2 to the Vivaldi antenna 5 can be adjusted; in this embodiment, the broadband coupling unit 521 is a 60-degree sector with a sector radius of 4 mm, and is not directly connected to the lower metal layer 32 of the transition structure 3, but is coupled.

[0031] The load 61 of the bent dipole 6 is located at the point where the current of the bent dipole 6 is maximum. Adjusting the shape and opening size of the bent dipole 6 can adjust the coupling effect of the bent dipole 6 after bending, and then adjust the absorption effect and frequency band of the antenna notch. In this embodiment, the bent dipole 6 is square, the opening length is 1mm, the antenna notch is located at 5.75GHz, and the gain in the end-fire direction at the notch frequency can be reduced by 10dB.

[0032] Adjusting the length of the bent dipole 6 can change its operating frequency, and thus adjust the frequency band of the antenna without reflection traps. By loading bent dipoles 6 of different lengths between the two antenna arms of the Vivaldi antenna 5, multiple absorption bands without reflection traps can be achieved in the antenna operating frequency band. In this embodiment, the length of all bent dipoles 6 is 18.5 mm, and there is only one absorption band without reflection traps in the antenna operating frequency band.

[0033] Adjusting the number of the bent dipoles 6 can adjust the absorption effect at the antenna trap, but too many will affect the matching effect of the Vivaldi antenna 5. Loading multiple bent dipoles 6 between the two antenna arms of the Vivaldi antenna 5 or changing their arrangement and distribution can change the mutual coupling effect between the bent dipoles 6, thereby adjusting the absorption effect and frequency band at the antenna trap. In this embodiment, six bent dipoles 6 are loaded between the two antenna arms of the Vivaldi antenna 5, arranged in three rows, with one, two, and three in each row, respectively, and the spacing between two adjacent rows is 10 mm, and the spacing between two adjacent bent dipoles 6 in each row is 10 mm.

[0034] By adjusting the impedance value of the load 61, the absorption effect and frequency band at the antenna notch can be adjusted, and using resistors, inductors and capacitors of different packages as loads can reduce the influence of parasitic effects on the absorption effect and frequency band; in this embodiment, each bent dipole 6 uses a 0201 packaged resistor as a load 61, and the resistance value of the resistor is 5.1Ω.

[0035] Figure 4 The measured E-plane and H-plane gain directivity diagrams of the embodiments of the present invention at different frequencies are given. The results show that the antenna can achieve ultra-wideband end-fire radiation characteristics and has a notch characteristic at 5.75 GHz.

[0036] Figure 5 The simulation and measured results of the gain variation with frequency in the end-fire direction of an embodiment of the present invention are given, and the simulation results when there is no bent dipole 6 between the two antenna arms of the Vivaldi antenna 5 are added for comparison. The results show that the antenna can achieve a gain notch characteristic of about 10 dB at 5.75 GHz and has an ultra-wide operating bandwidth.

[0037] Figure 6 The simulation and measured results of the reflection coefficient of the embodiment of the present invention with respect to the frequency variation are given. The results show that the antenna achieves the non-reflection characteristic of ultra-wideband, including the low-frequency band, combined with Figure 4 The results show that the antenna has multiple absorption bands, realizing an absorption band without reflection notch in the working frequency band, and also realizing a low-frequency absorption band outside the antenna working frequency band.

[0038] The performance of the antenna was simulated in full-wave simulation software and physically processed, verifying the correctness of the design of the present invention; the antenna has multiple absorption bands, realizing an absorption band without reflection notch in the working frequency band, and at the same time realizing a low-frequency absorption band outside the working frequency band of the antenna, realizing an ultra-wideband reflection-free notch characteristic with multiple absorption bands.

[0039] In manufacturing, the ultra-wideband non-reflective notch antenna with multiple absorption bands can be manufactured using a planar printed circuit board (PCB) process, or can be manufactured using a high temperature co-fired ceramic (HTCC) or low temperature co-fired ceramic (LTCC) process.

[0040] According to the above, the present invention can be realized.

[0041] The above descriptions are merely embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. within the design methods and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A multi-absorption band ultra-wideband non-reflection notch antenna, characterized in that The antenna comprises a dielectric substrate (1), and a microstrip line (2), a transition structure (3), a resistor and inductor branch (4), a Vivaldi antenna (5), and a plurality of bent dipoles (6) located on the dielectric substrate (1); one end of the microstrip line (2) is connected to a feeding port, and the other end is connected to the transition structure (3); the transition structure (3) comprises an upper metal layer (31) and a lower metal layer (32); the resistor and inductor branch (4) comprises a grounding metal layer (41), an inductor (42), a resistor (43), and a pad (44); the grounding metal layer (41) is connected to a grounding surface (21) of the microstrip line through a metallized via hole; one end of the inductor (42) is connected to a grounding surface (21) of the microstrip line The terminal is connected to the grounded metal layer (41), and the other terminal is connected to the pad (44); one terminal of the resistor (43) is connected to the pad (44), and the other terminal is connected to the transition structure (3); the resistor and inductor branch (4) is connected in parallel to the microstrip line (2) and the transition structure (3); the Vivaldi antenna (5) is composed of a first antenna arm (51) and a second antenna arm (52), and the first antenna arm (51) and the second antenna arm (52) are both symmetrically arranged on the upper surface of the dielectric substrate (1); the first antenna arm (51) is connected to the upper metal layer (31), and the second antenna arm (52) is coupled to the lower metal layer (32) via a broadband coupling unit (521); The bent dipole (6) is distributed between the first antenna arm (51) and the second antenna arm (52) and is located on the upper surface of the dielectric substrate (1); a load (61) is also provided in the bent dipole (6).

2. The multi-absorption band ultra-wideband non-reflection notch antenna according to claim 1, characterized in that One end of the upper metal layer (31) of the transition structure (3) is connected to the microstrip line (2), and the other end is connected to the first antenna arm (51); one end of the lower metal layer (32) of the transition structure (3) is connected to the ground plane (21) of the microstrip line, and the other end is located at the projection position of the bottom surface of the dielectric substrate (1) below the broadband coupling unit (521); the transition structure (3) realizes broadband matching from the microstrip line (2) to the Vivaldi antenna (5); by adjusting the width of the upper metal layer (31) and the lower metal layer (32), the matching effect and bandwidth from the microstrip line (2) to the Vivaldi antenna (5) can be adjusted.

3. The multi-absorption band ultra-wideband non-reflection notch antenna according to claim 1, characterized in that The resistor and inductor branch (4) can adjust the parasitic effects of the resistor (43) and the inductor (42) and the absorption effect and frequency band of the antenna low-frequency echo by changing the sizes of the resistor (43) and the inductor (42) and adjusting the sizes of the ground metal layer (41) and the pad (44); By adjusting the resistance value of the resistor (43), the inductance value of the inductor (42), and the connection position of the resistor and inductor branch (4) and the transition structure (3), the absorption effect and frequency band of the antenna low-frequency echo can also be adjusted, thereby achieving the absorption of the antenna low-frequency echo.

4. The multi-absorption band ultra-wideband non-reflection notch antenna according to claim 1, characterized in that The broadband coupling unit (521) can adjust the matching effect and bandwidth of the microstrip line (2) to the Vivaldi antenna (5) by changing its shape characteristics and size.

5. The multi-absorption band ultra-wideband non-reflection notch antenna according to claim 1, characterized in that The load (61) is located at the point where the current of the bent dipole (6) is maximum. By adjusting the shape and opening size of the bent dipole (6), the coupling effect of the bent dipole (6) after bending can be adjusted, thereby adjusting the absorption effect and frequency band of the antenna trap.

6. The multi-absorption band ultra-wideband non-reflection notch antenna according to claim 1, characterized in that The bent dipole (6) can change its operating frequency by adjusting its length, thereby adjusting the frequency band of the antenna without reflection notch; by loading bent dipoles (6) of different lengths between the first antenna arm (51) and the second antenna arm (52) of the Vivaldi antenna (5), multiple absorption bands without reflection notch can be realized in the antenna operating frequency band.

7. The multi-absorption band ultra-wideband non-reflection notch antenna according to claim 1, characterized in that By adjusting the number of the bent dipoles (6), the absorption effect on the antenna notch can be adjusted; by loading a plurality of bent dipoles (6) between the first antenna arm (51) and the second antenna arm (52) of the Vivaldi antenna (5), or by changing their arrangement and distribution, the mutual coupling effect between the bent dipoles (6) can be changed, thereby adjusting the absorption effect and frequency band on the antenna notch.

8. The multi-absorption band ultra-wideband non-reflection notch antenna according to claim 1, characterized in that The load (61) can adjust the absorption effect and frequency band at the antenna notch by adjusting its impedance value, and using resistors, inductors or capacitors in different packages as the load (61) can adjust the influence of parasitic effects on the absorption effect and frequency band.

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