Parylene coating and film removal method for semiconductor refrigerator

Abstract

The present application provides a method for coating and removing parylene from a semiconductor refrigerator, and relates to the technical field of coating removal. The method includes forming a mask layer at a specific position of the semiconductor refrigerator, and then coating the parylene film layer both inside and outside the semiconductor refrigerator, rotating the semiconductor refrigerator by a rotating device, and performing laser cutting respectively when the angle between the baseline of the rotating mechanism and the laser is 0, α, 90, 90+α, 180 and 270 degrees, wherein at α and 90+α degrees, the blocked area on the semiconductor refrigerator is cut. The present application adopts a rotation angle method to expose the mutually blocked surfaces between the welding columns of the semiconductor refrigerator, so that the laser can cut the mutually blocked areas. At the same time, the present application adopts a continuous rotation method, and the laser cutting can be connected end to end on different sides, and no dead angle will be left when the film layer is broken, and no wire drawing phenomenon of the film layer will occur after the mask layer and the parylene layer are removed.

Description

Technical Field

[0001] The present application relates to the technical field of coating removal, and in particular to a method for coating and removing parylene from a semiconductor refrigerator. Background Art

[0002] The unique structure and stable properties of the Parylene film give it excellent protective performance, and it is usually used to protect electronic products, semiconductor devices and other products. Usually, due to the subsequent processing requirements of the device, some areas do not need the Parylene film, and only some areas need to be coated with the Parylene film.

[0003] In view of this situation, since it is impossible to coat a certain area with the parylene film layer alone, the prior art usually achieves the purpose of partially coating the parylene film layer by coating first and then removing the film layer.

[0004] There are two common methods for forming partially coated parylene layers. The first method is to directly coat all areas with parylene layers, and then remove the layers from areas where parylene layers are not needed. However, due to the high chemical stability and high adhesion of parylene, direct removal is extremely difficult.

[0005] The second method is to first mask the area where the parylene film is not needed with a mask layer, coat the parylene film on all areas, and then remove the parylene film and the mask layer together. Although this method increases the process cost to a certain extent, because the parylene film is not directly deposited on the surface, it greatly reduces the difficulty of removing the parylene film.

[0006] However, even if the second method is adopted, there are still technical difficulties in coating and removing the parylene film layer on the surface of the current semiconductor refrigerator.

[0007] First, the size of the semiconductor refrigerator is small. The semiconductor refrigerator is a typical millimeter-level component. Miniaturization means that the chemical substances or physical methods used in the film removal process need to be more refined and controllable, and the film removal must be very precise, which greatly increases the difficulty of film removal.

[0008] Second, the structure of the semiconductor refrigerator is complex. The interior of the semiconductor refrigerator has internal channels formed by multiple semiconductors, and its surface has two solder column structures. The particularity of these structures must be taken into account when removing the film. However, the traditional film removal method cannot accurately and effectively remove the film layer in a specific area. During the removal process, it may cause damage to the film layer that does not need to be removed or even these structures themselves. At the same time, the structure of the semiconductor refrigerator will also affect the setting of the mask layer in the coating method. The matching between the film removal method and the coating method is also an issue that needs to be considered.

[0009] Third, the Parylene film has very good ductility, and the elongation at break can generally reach 100%-200%. Therefore, after removing the film, the film fracture will be pulled, resulting in burrs, whitening, film shedding, etc., which will affect the implementation of the next process of the product or affect the appearance of the product. Therefore, before removing the film, the film should be disconnected at the boundary between the area that needs to be protected by the film and the area that does not need to be protected by the film. In this way, after removing the film, the fracture interface of the film will be neat and smooth.

[0010] Common methods for disconnecting film layers include mechanical cutting and laser cutting, but these methods can only be used to process devices with regular shapes or relatively large sizes. Based on the above situation, for devices like semiconductor refrigerators that are tiny and have mutually shielded areas, the knives or lasers used in traditional methods cannot penetrate deeply for cutting.

[0011] Therefore, how to coat and remove the Parylene film on the semiconductor refrigerator and make the fracture interface of the film neat and smooth is a problem that researchers and technicians are eager to solve.

[0012] Laser cutting is a technology that uses a high-power density laser beam to irradiate materials to achieve material cutting. Traditional laser cutting cannot remove the film of semiconductor refrigerators, and there is no research in the prior art on removing the parylene film layer on semiconductor refrigerators by laser cutting technology.

[0013] It should be noted that this part of the present invention only provides background technology related to the present invention and does not necessarily constitute prior art or known technology. Summary of the invention

[0014] In view of this, the purpose of the present application is to provide a method for coating and removing the film of a semiconductor refrigerator with parylene, so as to at least solve the problem that the laser cutting of the prior art cannot remove the film of the semiconductor refrigerator. The present application adopts a rotation angle method to expose the mutually shielded surfaces between the welding columns of the semiconductor refrigerator, so that the laser can cut the mutually shielded areas. At the same time, the present application adopts a continuous rotation method, and the laser cutting can be connected end to end on different sides, and there will be no dead angle when the film layer is broken, and there will be no wire drawing phenomenon in the film layer after removing the mask layer and the parylene layer.

[0015] The present application provides a method for coating and removing parylene from a semiconductor refrigerator. The semiconductor refrigerator comprises an upper substrate, a lower substrate, a first welding column and a second welding column. The length of the lower substrate is greater than that of the upper substrate. The first welding column and the second welding column have the same structure and are spaced apart at a portion of the lower substrate that exceeds the upper substrate. The heights of the first welding column and the second welding column are both higher or lower than the height of the upper substrate. The method comprises the following steps:

[0016] S101, forming a mask layer on the upper substrate, the lower substrate, the first solder column and the second solder column;

[0017] S102, coating the inner and outer surfaces of the semiconductor refrigerator with a parylene film layer by a vapor deposition method;

[0018] S103, fixing the semiconductor refrigerator on the rotating mechanism using a fixing mechanism;

[0019] S104, when the included angle between the baseline of the rotating mechanism and the laser is 0 degrees, laser cutting the upper substrate, the lower substrate and the first side surface of the first welding column;

[0020] S105, when the included angle between the baseline of the rotating mechanism and the laser is a first angle α, laser cutting the first side surface of the second welding column, wherein 0°<α<90°;

[0021] S106, when the included angle between the baseline of the rotating mechanism and the laser is 90 degrees, laser cutting the upper substrate, the lower substrate, the second welding column and the second side surface of the first welding column;

[0022] S107, when the included angle between the baseline of the rotating mechanism and the laser is 90+α degrees, laser cutting the third side surface of the first welding column;

[0023] S108, when the included angle between the baseline of the rotating mechanism and the laser is 180 degrees, laser cutting the upper substrate, the lower substrate and the third side surface of the second welding column;

[0024] S109, when the included angle between the baseline of the rotating mechanism and the laser is 270 degrees, laser cutting the fourth side surfaces of the upper substrate, the lower substrate, the first welding column and the second welding column;

[0025] S110, removing the mask layer and the parylene film layer on the upper substrate, the lower substrate, the first solder pillars, and the second solder pillars.

[0026] In some embodiments, the first angle α is calculated as follows:

[0027]

[0028] Among them, d 1 is the distance between the first welding column and the second welding column;

[0029] w is the width of the first solder column and the second solder column.

[0030] In some embodiments, when the heights of the first solder column and the second solder column are both higher than the height of the upper substrate, and the first angle is 35°<α<90°, the distance d between the first solder column and the second solder column and the upper substrate is 2When it is greater than a preset threshold, wherein the preset threshold value ranges from 0.2mm to 0.3mm; S105 also includes: when the angle between the baseline of the rotating mechanism and the laser is a first angle α, the laser partially cuts the second side of the upper substrate blocked by the first welding column and the second welding column; S107 also includes: when the angle between the baseline of the rotating mechanism and the laser is 90+α degrees, the laser completely cuts the second side of the upper substrate blocked by the first welding column and the second welding column.

[0031] In some embodiments, when the heights of the first welding column and the second welding column are both lower than the height of the upper substrate; the specific method of laser cutting the fourth side surfaces of the first welding column and the second welding column in S109 is: tilt the rotating mechanism downward by a second angle β along the direction in which the fourth side surfaces of the first welding column and the second welding column extend, and laser cut the fourth side surfaces of the first welding column and the second welding column; wherein 0°<β<90°.

[0032] In some embodiments, the second angle β is calculated as follows:

[0033]

[0034] Among them, d 2 is the distance between the first welding column and the second welding column and the upper substrate;

[0035] h is the height difference between the first solder column, the second solder column and the upper substrate.

[0036] In some embodiments, S101 specifically includes: using a fully automatic vision-guided piezoelectric valve dispensing method to apply glue on the upper substrate, the lower substrate, the first welding column and the second welding column, and then using a UV lamp to cure the glue to form a mask layer; wherein the thickness of the glue is 0.1-0.2mm, the glue is an acrylic UV light-curing glue, and the wavelength of the UV lamp is 365nm-395nm.

[0037] In some embodiments, in S102 , the parylene film layer is of C type or F type, and the thickness of the parylene film layer is 10-25 μm.

[0038] In some embodiments, in S104 to S109, the laser has a wavelength of 355-1064 nm, a pulse of femtosecond or picosecond level, and a cutting power of 1-10 W.

[0039] In some embodiments, in S103, the rotating mechanism includes a rotating shaft, a turntable and a plurality of retractable support rods; the turntable is rotatably disposed on the rotating shaft; a plurality of retractable support rods are evenly spaced between the rotating shaft and the turntable, one end of the retractable support rod is fixedly connected to the rotating shaft, and the other retractable end is connected to the bottom surface of the turntable, and the plurality of retractable support rods cooperate to tilt the turntable.

[0040] In some embodiments, the fixing mechanism is at least one of a clamp, a suction cup, a pressure plate, and a limiting column.

[0041] The beneficial effects that this application can achieve are:

[0042] 1. The product size of the semiconductor refrigerator is very small, and the distance between the two welding columns is less than 1mm. The laser cutting of the prior art usually cuts the laser vertically on the cutting surface. This method cannot reach the part where the two welding columns block each other. However, this application adopts the method of rotary cutting to expose the area where the welding columns block each other, and calculates the first angle α according to the structural parameters of the semiconductor refrigerator. At a specific angle, the shielded area is cut, which solves the problem that the laser cutting of the prior art cannot remove the film of the semiconductor refrigerator.

[0043] 2. The present application also makes specific process improvements for semiconductor refrigerators in which the height of the welding column is lower than the upper substrate. The present application calculates the second angle β based on the structural parameters of the semiconductor refrigerator. By tilting the semiconductor refrigerator downward at the second angle β, the fourth side surfaces of the first welding column and the second welding column are exposed, and laser cutting can be performed, thereby solving the problem that the laser cutting in the prior art cannot remove the film of the semiconductor refrigerator.

[0044] 3. The rotary cutting of the present application is a continuous rotation, so the cutting marks on different sides of the semiconductor refrigerator are connected end to end, no dead angle will be left when the film layer is broken, and no wire drawing phenomenon will occur after removing the parylene film layer and the mask layer.

[0045] 4. This application reasonably sets the laser parameters for laser cutting, and uses lasers of a specific wavelength range and a specific power to ensure that the parylene film and mask layer on the semiconductor refrigerator can be removed. At the same time, the picosecond or femtosecond laser pulse time is very short, and the time it acts on the product has a low thermal impact on the surrounding film layer, and there will be no phenomenon such as film shedding.

[0046] 5. This application uses a special rotating mechanism and a fixing mechanism. The fixing mechanism can ensure that the position of the semiconductor cooler will not shift when it rotates on the rotating mechanism. The rotating mechanism can drive the semiconductor cooler to rotate axially and can also tilt when cutting the low welding column. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0048] Figure 1 The schematic diagram of the structure of the semiconductor refrigerator in Example 1 of the present application is shown;

[0049] Figure 2 A schematic diagram of the structure of a semiconductor refrigerator in Example 2 of the present application is shown;

[0050] Figure 3 A schematic diagram of step S104 in Example 1 of the present application is shown;

[0051] Figure 4 A schematic diagram of step S105 in Example 1 of the present application is shown;

[0052] Figure 5 A schematic diagram of step S106 in Example 1 of the present application is shown;

[0053] Figure 6 A schematic diagram of step S107 in Example 1 of the present application is shown;

[0054] Figure 7 A schematic diagram of step S108 in Example 1 of the present application is shown;

[0055] Figure 8 A schematic diagram of step S109 in Example 1 of the present application is shown;

[0056] Fig. 9 A schematic diagram of step S104 in Embodiment 2 of the present application is shown;

[0057] Fig.10 A schematic diagram of step S105 in Example 2 of the present application is shown;

[0058] Fig.11 A schematic diagram of step S106 in Embodiment 2 of the present application is shown;

[0059] Fig.12 A schematic diagram of step S107 in Example 2 of the present application is shown;

[0060] Fig.13 A schematic diagram of step S108 in Embodiment 2 of the present application is shown;

[0061] Fig.14 A schematic diagram showing the laser cutting of the fourth side surfaces of the upper substrate and the lower substrate in step S109 in embodiment 2 of the present application is shown;

[0062] Fig.15 A schematic diagram showing laser cutting of the fourth side surfaces of the first welding column and the second welding column in step S109 in embodiment 2 of the present application is shown;

[0063] Fig.16 A microscope top view of the semiconductor refrigerator obtained after film removal in Example 1 of the present application is shown;

[0064] Fig.17 A microscope front view of the semiconductor refrigerator obtained after film removal in Example 1 of the present application is shown;

[0065] Fig.18 A microscope image of the semiconductor refrigerator obtained after film removal in Example 2 of the present application is shown;

[0066] Fig.19 A microscope image of the semiconductor refrigerator obtained after film removal in Example 3 of the present application is shown;

[0067] Fig. 20 A microscope image of the semiconductor refrigerator obtained after film removal in Comparative Example 1 of the present application is shown;

[0068] Fig.21 A microscope image of the semiconductor refrigerator obtained after film removal in Comparative Example 2 of the present application is shown.

[0069] Description of reference numerals:

[0070] 11. Upper substrate; 12. Lower substrate; 13. First welding column; 14. Second welding column; 21. Rotating shaft; 22. Turntable; 23. Retractable support rod; 31. First clamp; 32. Second clamp; 33. Third clamp. DETAILED DESCRIPTION

[0071] The term "comprising" in the specification and claims of the present application and the drawings is synonymous with "including" and "containing", and is inclusive or open-ended, and does not exclude additional undescribed elements or method steps. "Comprising" is a technical term used in the claim language, meaning that the elements are present, but other elements may be added and still form a structure or method within the scope of the claim.

[0072] It should be noted that similar reference numerals and letters represent similar items in the following drawings, so once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description and cannot be understood as indicating or implying relative importance. The term "about" in this application means to include a small change (up to + / -10%) from the stated value.

[0073] The present application provides a method for coating and removing parylene from a semiconductor refrigerator, namely, a TEC, which specifically includes an upper substrate 11, a lower substrate 12, a first welding column 13 and a second welding column 14. The length of the lower substrate 12 is greater than that of the upper substrate 11. The first welding column 13 and the second welding column 14 have the same structure and are spaced apart at a portion of the lower substrate 12 that exceeds the upper substrate 11. The heights of the first welding column 13 and the second welding column 14 are both higher or lower than the height of the upper substrate 11.

[0074] Based on the above structure, the finished semiconductor refrigerator needs to be welded with wires to connect to the power supply, so the welding column is the area where the parylene film layer is not required. The upper substrate 11 and the lower substrate 12 are heat transfer areas, and in order to reduce thermal resistance, they are also areas where the parylene film layer is not required. How to achieve the purpose of partially coating the parylene film layer on the semiconductor refrigerator is at least one of the technical problems solved by the embodiments of the present application.

[0075] For the sake of convenience, the heights of the first solder column 13 and the second solder column 14 that are higher than the height of the upper substrate 11 are referred to as a high solder column structure, and the heights of the first solder column 13 and the second solder column 14 that are lower than the height of the upper substrate 11 are referred to as a low solder column structure.

[0076] The method comprises the following steps:

[0077] S101, forming a mask layer on the upper substrate, the lower substrate, the first solder column and the second solder column;

[0078] S102, coating the inner and outer surfaces of the semiconductor refrigerator with a parylene film layer by a vapor deposition method;

[0079] S103, fixing the semiconductor refrigerator on the rotating mechanism using a fixing mechanism;

[0080] S104, when the included angle between the baseline of the rotating mechanism and the laser is 0 degrees, laser cutting the upper substrate, the lower substrate and the first side surface of the first welding column;

[0081] S105, when the included angle between the baseline of the rotating mechanism and the laser is a first angle α, laser cutting the first side surface of the second welding column, wherein 0°<α<90°;

[0082] S106, when the included angle between the baseline of the rotating mechanism and the laser is 90 degrees, laser cutting the upper substrate, the lower substrate, the second welding column and the second side surface of the first welding column;

[0083] S107, when the included angle between the baseline of the rotating mechanism and the laser is 90+α degrees, laser cutting the third side surface of the first welding column;

[0084] S108, when the included angle between the baseline of the rotating mechanism and the laser is 180 degrees, laser cutting the upper substrate, the lower substrate and the third side surface of the second welding column;

[0085] S109, when the included angle between the baseline of the rotating mechanism and the laser is 270 degrees, laser cutting the fourth side surfaces of the upper substrate, the lower substrate, the first welding column and the second welding column;

[0086] S110, removing the mask layer and the parylene film layer on the upper substrate, the lower substrate, the first solder pillars, and the second solder pillars.

[0087] It should be noted that the present application does not have any special restrictions on the height position of the sides of the laser cutting of the upper substrate, the lower substrate, the first welding column and the second welding column. It only needs to ensure that the laser cutting marks on the four sides can be connected end to end and that the parylene film layer and the mask layer can be removed.

[0088] It should be noted that the laser of the present application is a multi-axis laser, and the laser can move up and down along the thickness direction of the semiconductor refrigerator for cutting, or move left and right along the extension direction of each side for cutting. It should be noted that the extension direction of the laser is parallel to the horizontal plane, and when the rotating mechanism is set horizontally, the extension direction of the laser is also parallel to the plane direction of the rotating mechanism.

[0089] It should be noted that the baseline of the rotating mechanism refers to the line connecting the center points of the two welding columns of the TEC when the rotating mechanism is set horizontally.

[0090] Furthermore, the angle between the baseline of the rotating mechanism and the laser refers to the angle between the line connecting the center points of the two welding columns of the TEC and the extension direction of the laser on the horizontal plane when the rotating mechanism is set horizontally. More specifically, the angle is the angle between the baseline of the turntable and the laser beam on the horizontal plane. Furthermore, the angle can also be understood as the angle of rotation of the turntable.

[0091] Specifically, the first side surface of the first weld column is the side surface facing outward along its length direction, the second side surface of the first weld column is the side surface facing outward along its width direction, and the third side surface and the fourth side surface of the first weld column are the sides opposite to the first side surface and the second side surface respectively.

[0092] Specifically, the first side surface of the second weld column is the side surface facing inward along its length direction, the second side surface of the second weld column is the side surface facing outward along its width direction, and the third side surface and the fourth side surface of the second weld column are the sides opposite to the first side surface and the second side surface respectively.

[0093] Specifically, the orientations of the side surfaces of the upper substrate and the lower substrate are consistent with the orientations of the first solder pillars and the second solder pillars.

[0094] In some embodiments, the first angle α is calculated as follows:

[0095]

[0096] Among them, d 1 is the distance between the first welding column and the second welding column;

[0097] w is the width of the first solder column and the second solder column.

[0098] It should be noted that the distance between the first welding column and the second welding column refers to the distance between the third side surface of the first welding column and the first side surface of the second welding column.

[0099] In some embodiments, when the heights of the first solder column and the second solder column are both higher than the height of the upper substrate, and the first angle is 35°<α<90°, the distance d between the first solder column and the second solder column and the upper substrate is 2 When it is greater than a preset threshold, wherein the preset threshold has a value range of 0.2mm-0.3mm; S105 also includes: when the angle between the baseline of the rotating mechanism and the laser is a first angle α, the laser partially cuts the second side of the upper substrate blocked by the first welding column and the second welding column; S107 also includes: when the angle between the baseline of the rotating mechanism and the laser is 90+α degrees, the laser completely cuts the second side of the upper substrate blocked by the first welding column and the second welding column.

[0100] It should be noted that the preset threshold is affected by multiple factors. From the perspective of the structure of TEC, the value of the preset threshold is related to the width of the welding column and the spacing between the welding columns. From the perspective of the optical system of the laser equipment, the value of the preset threshold is related to the size of the focused spot of the laser and the focal depth, and the spot and focal depth are determined by multiple factors such as beam quality, wavelength, focal length, focusing mirror, and beam expander. From the perspective of the visual imaging system of the laser equipment, the value of the preset threshold is related to the image processing system. Angle rotation and focusing planes at different heights affect the degree of blur of the image, and different processing systems can accommodate different degrees of blur. Therefore, the value of the preset threshold is affected by multiple factors. The inventor of this application finally determined that the value range of the preset threshold is 0.2mm-0.3mm through DOE experiments and manual experience.

[0101] Furthermore, because the distance d between the first solder column and the second solder column and the upper substrate 2 The relationship between the preset threshold value determines whether the laser can cut the second side of the upper substrate blocked by the first welding column and the second welding column. Therefore, the embodiment of the present application selects the maximum value of the preset threshold value of 0.3 mm. In the preferred embodiment of the present application, the distance d between the first welding column and the second welding column and the upper substrate is 2 The maximum value of the preset threshold is 0.3 mm. Even in the extreme case where the preset threshold is the maximum value, the laser in the preferred embodiment of the present invention can cut the second side of the upper substrate blocked by the first welding column and the second welding column.

[0102] Preferably, when the TEC is a high solder column structure and when the angle between the baseline of the rotating mechanism and the laser is the first angle α, the second side of the upper substrate blocked by the first solder column and the second solder column when the laser is cut is the first partial area, and when the angle between the baseline of the rotating mechanism and the laser is 90+α degrees, the second side of the upper substrate blocked by the first solder column and the second solder column when the laser is cut is the second partial area. The first partial area and the second partial area together form a complete area of ​​the upper substrate blocked by the first solder column and the second solder column. When the first angle is 35°<α<90° and the distance d between the first solder column and the second solder column and the upper substrate is 2 When it is greater than a preset threshold, it can be ensured that the laser cutting marks on the second side of the upper substrate are also complete and continuous, and no burrs will be generated after removing the parylene film layer and the mask layer.

[0103] It should be noted that when the TEC is a high solder column structure and the distance d between the first solder column and the second solder column and the upper substrate is 2 When the value is not greater than the preset threshold, the first and second regions cut by laser cannot form a complete blocked region, and there is a portion of the film layer that has not been cut between the first and second regions. 2 Greater than a preset threshold is a preferred option. 2 Not being greater than the preset threshold does not affect the technical effect of the present application. The specific reason is that the solder column is very small relative to the upper substrate, so the area it blocks is also very small. Even if there is a part of the film layer that has not been cut, the size of this part of the film layer that has not been cut is even smaller. Therefore, this part of the film layer that has not been cut will hardly produce burrs after the film layer is removed.

[0104] However, if there is an uncut film layer on the solder column, because the size of the solder column itself is very small, it will produce more obvious burrs. Therefore, the present application has made corresponding cutting designs for both the high solder column structure and the low solder column structure to ensure that the cutting marks on different sides of the solder column must be connected end to end, and no dead angle will be left when the film layer is broken, and no wire drawing phenomenon will occur after removing the parylene film layer and the mask layer.

[0105] In some embodiments, when the heights of the first welding column and the second welding column are both lower than the height of the upper substrate; the specific method of laser cutting the fourth side surfaces of the first welding column and the second welding column in S109 is: tilt the rotating mechanism downward by a second angle β along the direction in which the fourth side surfaces of the first welding column and the second welding column extend, and laser cut the fourth side surfaces of the first welding column and the second welding column; wherein 0°<β<90°.

[0106] It should be noted that when the angle between the baseline of the rotating mechanism and the laser is 270 degrees, if it is a low solder column structure, the laser cannot directly cut the fourth side surface of the first solder column and the second solder column. Therefore, the present application uses the special structure of the rotating structure to tilt the rotating structure, thereby exposing the fourth side surface of the first solder column and the second solder column, and then performing laser cutting.

[0107] In some embodiments, the second angle β is calculated as follows:

[0108]

[0109] Among them, d 2 is the distance between the first welding column and the second welding column and the upper substrate;

[0110] h is the height difference between the first solder column, the second solder column and the upper substrate.

[0111] It should be noted that the distance between the first solder column and the second solder column and the upper substrate refers to the distance between the fourth side surfaces of the first solder column and the second solder column and the second side surface of the upper substrate; the height difference between the first solder column and the second solder column and the upper substrate refers to the height difference between the upper surfaces of the first solder column and the second solder column and the upper surface of the upper substrate.

[0112] In some embodiments, S101 specifically includes: using a fully automatic vision-guided piezoelectric valve dispensing method to apply glue on the upper substrate, the lower substrate, the first welding column and the second welding column, and then using a UV lamp to cure the glue to form a mask layer; wherein the thickness of the glue is 0.1-0.2mm, the glue is an acrylic UV light-curing glue, and the wavelength of the UV lamp is 365nm-395nm.

[0113] In some embodiments, in S102, the parylene film layer is of type C or type F, and the thickness of the parylene film layer is 10-25 μm. The present application reasonably sets the thickness of the parylene film layer, and reasonably reduces the difficulty of removing the parylene film layer while ensuring the protective performance of the parylene.

[0114] In some embodiments, in S104 to S109, the laser is a laser with a wavelength of 355-1064nm, a pulse of femtosecond or picosecond, and a cutting power of 1-10W. The present application reasonably sets the laser parameters for laser cutting, and uses a laser with a specific wavelength range and a specific power to ensure that the parylene film layer and the mask layer on the semiconductor refrigerator can be removed. At the same time, the picosecond or femtosecond laser pulse time is very short, and the time it acts on the product has a low thermal impact on the surrounding film layer, and there will be no phenomenon such as film shedding.

[0115] In some embodiments, in S103, the rotating mechanism includes a rotating shaft 21, a turntable 22 and a plurality of retractable support rods 23; the turntable 22 is rotatably disposed on the rotating shaft 21; a plurality of retractable support rods 23 are evenly spaced between the rotating shaft 21 and the turntable 22, one end of the retractable support rod 23 is fixedly connected to the rotating shaft 21, and the other retractable end is connected to the bottom surface of the turntable 22, and the plurality of retractable support rods 23 cooperate to tilt the turntable 22.

[0116] Preferably, there are four retractable support rods 23, and the four retractable support rods 23 are evenly spaced and arranged between the rotating shaft 21 and the rotating disk 22. When the semiconductor refrigerator is arranged, its length direction can be consistent with the extension direction of the two opposite retractable support rods 23, so that the rotating disk 22 can more conveniently complete the tilting of the low welding column structure.

[0117] In some embodiments, the fixing mechanism is at least one of a clamp, a suction cup, a pressure plate, and a limiting column.

[0118] The following is an exemplary description of the structure of the fixing mechanism of the present application, but does not limit the structure of the fixing mechanism of the present application, as long as the semiconductor refrigerator can be fixed on the rotating mechanism.

[0119] Specifically, the clamp includes a first clamp 31, a second clamp 32 and a third clamp 33. The structure of each clamp is consistent, and each includes a clamp shaft that can be extended and retracted in the vertical direction and can be rotated in the axial direction. The clamp clamp plate is rotatably arranged on the top of the clamp shaft. The turntable is also provided with a first receiving groove, a second receiving groove and a third receiving groove, which can respectively accommodate the first clamp 31, the second clamp 32 and the third clamp 33. The three receiving grooves are respectively arranged on the three sides of the semiconductor refrigerator that do not have a welding column structure.

[0120] Specifically, the suction cup can be a silicone suction cup or a vacuum suction cup, and the suction cup is arranged on the surface of the turntable, and the top of the suction cup abuts against the bottom of the semiconductor refrigerator to fix the semiconductor refrigerator.

[0121] Specifically, the pressure plate is a pressure plate device arranged above the turntable, and may include a suspension device. The telescopic rod is telescopically arranged on the suspension device in a vertical direction. The movable end of the telescopic rod is provided with a pressure plate. The telescopic rod drives the pressure plate to abut against the top of the semiconductor refrigerator to fix the semiconductor refrigerator.

[0122] Specifically, the limiting columns are four retractable limiting columns, and the four limiting columns are all arranged on the turntable and respectively arranged on the four sides of the semiconductor refrigerator, and the four limiting columns just clamp and fix the semiconductor refrigerator.

[0123] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0124] Example 1

[0125] like Figure 1 As shown, the semiconductor refrigerator includes an upper substrate 11, a lower substrate 12, a first welding column 13 and a second welding column 14. The length of the lower substrate 12 is greater than that of the upper substrate 11. The first welding column 13 and the second welding column 14 have the same structure and are spaced apart at the portion of the lower substrate 12 that exceeds the upper substrate 11. The heights of the first welding column 13 and the second welding column 14 are both higher than the height of the upper substrate 11.

[0126] The model of the semiconductor refrigerator is 1012A-1, and the length×width×height×welding column height of the semiconductor refrigerator are 7×4×1.1×1.6 mm respectively.

[0127] The distance d between the first welding column 13 and the second welding column 14 1 is 0.5 mm, the width w of the first solder column 13 and the second solder column 14 is 0.6 mm, and the distance d between the first solder column 13 and the second solder column 14 and the upper substrate 11 is 2 It is 0.4mm.

[0128] The calculation method of the first angle α is:

[0129]

[0130] The first angle α is within the range of 35° to 90°, and the distance d between the first solder column 13 and the second solder column 14 and the upper substrate 11 is 2 It is 0.4mm, which is greater than the preset threshold of 0.3mm.

[0131] The present application provides a method for coating and removing parylene from a semiconductor refrigerator, which specifically comprises the following steps:

[0132] S101, forming a mask layer on the upper substrate 11, the lower substrate 12, the first welding column 13 and the second welding column 14;

[0133] An acrylic UV light-curing glue with a thickness of 0.15 mm is applied to the upper substrate 11, the lower substrate 12, the first solder column 13 and the second solder column 14 using a fully automatic vision-guided piezoelectric valve dispensing method. The glue is then cured using a UV lamp with a wavelength of 395 nm to form a mask layer.

[0134] S102, coating the inner and outer surfaces of the semiconductor refrigerator with a parylene film layer by a vapor deposition method;

[0135] The parylene film layer is of C type, and the thickness of the parylene film layer is 15 μm.

[0136] S103, using the first clamp 31 to fix the semiconductor refrigerator on the turntable 22;

[0137] S104, such as Figure 3 As shown, when the included angle between the base line of the turntable 22 and the laser is 0 degrees, the laser cuts the first side surface of the upper substrate 11, the lower substrate 12 and the first welding column 13;

[0138] S105, such as Figure 4 As shown, when the included angle between the base line of the turntable 22 and the laser is a first angle of 50.2 degrees, the laser cuts the first side surface of the second welding column 14, and the laser partially cuts the second side surface of the upper substrate 11 blocked by the first welding column 13 and the second welding column 14;

[0139] S106, such as Figure 5 As shown, when the base line of the turntable 22 and the laser have an angle of 90 degrees, the laser cuts the upper substrate 11, the lower substrate 12, the second welding column 14 and the second side surface of the first welding column 13;

[0140] The second side surface of the upper substrate 11 cut in S106 is the second side surface of the upper substrate 11 that is not blocked by the first solder pillar 13 and the second solder pillar 14 .

[0141] S107, such as Figure 6 As shown, when the angle between the base line of the turntable 22 and the laser is 140.2 degrees, the laser cuts the third side surface of the first welding column 13, and the laser completely cuts the second side surface of the upper substrate 11 blocked by the first welding column 13 and the second welding column 14;

[0142] S108, such as Figure 7 As shown, when the angle between the base line of the turntable 22 and the laser is 180 degrees, the laser cuts the third side surface of the upper substrate 11, the lower substrate 12 and the second welding column 14;

[0143] S109, such as Figure 8 As shown, when the included angle between the base line of the turntable 22 and the laser is 270 degrees, the first clamp 31 is retracted into the first receiving groove, the second clamp 32 and the third clamp 33 are extended from the second receiving groove and the third receiving groove respectively to fix the semiconductor refrigerator, and the upper substrate 11, the lower substrate 12, the first welding column 13 and the fourth side surface of the second welding column 14 are cut by laser;

[0144] In S104 to S109, the laser is an ultraviolet laser with a wavelength of 355nm, a pulse of picosecond level, and a cutting power of 2W.

[0145] S110 , removing the mask layer and the parylene film layer on the upper substrate 11 , the lower substrate 12 , the first solder pillars 13 , and the second solder pillars 14 .

[0146] like Fig.16 and Fig.17 As shown, in the semiconductor refrigerator obtained by Example 1 of the present application, the parylene film layer and the mask layer on the upper substrate 11, the lower substrate 12, the first solder column 13 and the second solder column 14 are completely removed without any residue, and there is no burr or wire drawing on the cut section, which proves that the present application can effectively remove the mask layer and the parylene layer on the semiconductor refrigerator with a high solder column structure.

[0147] The present application adopts a rotation angle method to expose the mutually shielded surfaces between the semiconductor cooler welding columns, so that the laser can cut the mutually shielded areas. At the same time, the present application adopts a continuous rotation method, and the laser cutting can be connected end to end on different sides, and there will be no dead angle when the film layer is broken, and there will be no wire drawing phenomenon in the film layer after removing the mask layer and the parylene layer.

[0148] Example 2

[0149] like Figure 2 As shown, the semiconductor refrigerator includes an upper substrate 11, a lower substrate 12, a first welding column 13 and a second welding column 14. The length of the lower substrate 12 is greater than that of the upper substrate 11. The first welding column 13 and the second welding column 14 have the same structure and are spaced apart at the portion of the lower substrate 12 that exceeds the upper substrate 11. The heights of the first welding column 13 and the second welding column 14 are both lower than the height of the upper substrate 11.

[0150] The model of the semiconductor refrigerator is 1012B, and the length×width×height×welding column height of the semiconductor refrigerator are 7×3×1.2×0.7 mm respectively.

[0151] The distance d between the first welding column 13 and the second welding column 14 1 The width w of the first solder column 13 and the second solder column 14 is 0.4 mm.

[0152] The calculation method of the first angle α is:

[0153]

[0154] The distance d between the first solder pillar 13 and the second solder pillar 14 and the upper substrate 11 2 The height difference h between the first solder column 13 and the second solder column 14 and the upper substrate 11 is 0.5 mm.

[0155] The calculation method of the second angle β is:

[0156]

[0157] The present application provides a method for coating and removing parylene from a semiconductor refrigerator, which specifically comprises the following steps:

[0158] S101, forming a mask layer on the upper substrate 11, the lower substrate 12, the first welding column 13 and the second welding column 14;

[0159] An acrylic UV light-curing glue with a thickness of 0.15 mm is applied to the upper substrate 11, the lower substrate 12, the first solder column 13 and the second solder column 14 using a fully automatic vision-guided piezoelectric valve dispensing method. The glue is then cured using a UV lamp with a wavelength of 395 nm to form a mask layer.

[0160] S102, coating the inner and outer surfaces of the semiconductor refrigerator with a parylene film layer by a vapor deposition method;

[0161] The parylene film layer is of C type, and the thickness of the parylene film layer is 15 μm.

[0162] S103, using the first clamp 31 to fix the semiconductor refrigerator on the turntable 22;

[0163] S104, such as Fig. 9 As shown, when the included angle between the base line of the turntable 22 and the laser is 0 degrees, the laser cuts the first side surface of the upper substrate 11, the lower substrate 12 and the first welding column 13;

[0164] S105, such as Fig.10 As shown, when the included angle between the base line of the turntable 22 and the laser is a first angle of 23.7 degrees, the laser cuts the first side surface of the second welding column 14;

[0165] S106, such as Fig.11 As shown, when the base line of the turntable 22 and the laser have an angle of 90 degrees, the laser cuts the upper substrate 11, the lower substrate 12, the second welding column 14 and the second side surface of the first welding column 13;

[0166] The second side surface of the upper substrate 11 cut in S106 is the entire second side surface of the upper substrate 11 .

[0167] S107, such as Fig.12 As shown, when the included angle between the base line of the turntable 22 and the laser is 113.7 degrees, the laser cuts the third side surface of the first welding column 13;

[0168] S108, such as Fig.13 As shown, when the angle between the base line of the turntable 22 and the laser is 180 degrees, the laser cuts the third side surface of the upper substrate 11, the lower substrate 12 and the second welding column 14;

[0169] S109, such as Fig.14As shown, when the included angle between the base line of the turntable 22 and the laser is 270 degrees, the first clamp 31 is retracted into the first receiving groove, the second clamp 32 and the third clamp 33 are extended from the second receiving groove and the third receiving groove respectively to fix the semiconductor refrigerator, and the upper substrate 11, the lower substrate 12, the first welding column 13 and the fourth side surface of the second welding column 14 are cut by laser;

[0170] The specific method for laser cutting the fourth side surface of the first welding column 13 and the second welding column 14 in S109 is: tilt the turntable 22 downward at a second angle of 35 degrees along the direction in which the fourth side surface of the first welding column 13 and the second welding column 14 extend, and laser cut the fourth side surface of the first welding column 13 and the second welding column 14.

[0171] In S104 to S109, the laser is an ultraviolet laser with a wavelength of 355nm, a pulse of picosecond level, and a cutting power of 2W.

[0172] S110 , removing the mask layer and the parylene film layer on the upper substrate 11 , the lower substrate 12 , the first solder pillars 13 , and the second solder pillars 14 .

[0173] like Fig.18 As shown, in the semiconductor refrigerator obtained by Example 2 of the present application, the parylene film layer and the mask layer on the upper substrate 11, the lower substrate 12, the first welding column 13 and the second welding column 14 are completely removed without any residue, and there is no burr or wire drawing on the cut section, which proves that the present application can effectively remove the semiconductor refrigerator with a low welding column structure.

[0174] The present application adopts a rotation angle method to expose the mutually shielded surfaces between the semiconductor cooler welding columns, so that the laser can cut the mutually shielded areas. At the same time, the present application adopts a continuous rotation method, and the laser cutting can be connected end to end on different sides, and there will be no dead angle when the film layer is broken, and there will be no wire drawing phenomenon in the film layer after removing the mask layer and the parylene layer.

[0175] The present application also makes specific process improvements for semiconductor refrigerators whose welding column height is lower than the upper substrate 11. The present application calculates the second angle β based on the structural parameters of the semiconductor refrigerator. By tilting the semiconductor refrigerator downward at the second angle β, the fourth side surfaces of the first welding column 13 and the second welding column 14 are exposed, and laser cutting can be performed, thereby solving the problem that the laser cutting of the prior art cannot remove the film of the semiconductor refrigerator with a low welding column structure.

[0176] Example 3

[0177] The semiconductor refrigerator has a high solder column structure. The model of the semiconductor refrigerator is 1012A-2. The length×width×height×height of the semiconductor refrigerator are 7×4×1.1×1.6 mm respectively.

[0178] The distance d between the first welding column and the second welding column1 is 0.5 mm, the width w of the first solder column and the second solder column is 0.4 mm, and the distance d between the first solder column and the second solder column and the upper substrate is 2 It is 0.15mm.

[0179] The calculation method of the first angle α is:

[0180]

[0181] The first angle α is within the range of 35° to 90°, but the distance d between the first solder column and the second solder column and the upper substrate is 2 The value is 0.15 mm, which is smaller than the preset threshold value of 0.3 mm.

[0182] The method of coating and removing the parylene film of the semiconductor refrigerator is carried out with reference to Example 1, except that:

[0183] After laser cutting the second side of the upper substrate blocked by the first and second solder pillars at S105 and laser cutting the second side of the upper substrate blocked by the first and second solder pillars at S107, a small amount of uncut film layer still remains on the second side of the upper substrate blocked by the first and second solder pillars.

[0184] like Fig.19 As shown, in the semiconductor refrigerator obtained by using Example 3 of the present application, the parylene film layer and the mask layer on the lower substrate, the first solder column and the second solder column are completely removed without any residue, and there is no burr or wire drawing phenomenon on the cut section. There is a slight burr on the second side of the upper substrate blocked by the first solder column and the second solder column, which proves that even if the distance d between the first solder column and the second solder column and the upper substrate of the semiconductor refrigerator with a high solder column structure is 2 If the value is less than a preset threshold, the film can also be removed by using the technical solution of the present application.

[0185] Comparative Example 1

[0186] The structure of the semiconductor refrigerator is as in Example 1, and steps S101, S102 and S110 are the same as those in Example 1, except that steps S103 to S109 are replaced by:

[0187] Cutting the upper substrate, the lower substrate and the first side surface of the first welding column by laser;

[0188] Cutting the second side surfaces of the upper substrate, the lower substrate, the first welding column and the second welding column by laser, wherein the cut second side surface of the upper substrate is the second side surface of the upper substrate that is not blocked by the first welding column and the second welding column;

[0189] Cutting the upper substrate, the lower substrate and the third side surface of the second welding column by laser;

[0190] The fourth side surfaces of the upper substrate, the lower substrate, the first welding column and the second welding column are cut by laser.

[0191] like Fig. 20 As shown, in the semiconductor refrigerator obtained by comparative example 1, the parylene film layer and the mask layer of the lower substrate are completely removed without residue, but the parylene film layer and the mask layer on the first solder column and the second solder column are seriously left, and the cut section has serious burrs and wire drawing phenomena, and the second side surface of the upper substrate blocked by the first solder column and the second solder column also has certain burrs and wire drawing phenomena. It proves that the semiconductor refrigerator with a high solder column structure cannot be film removed by the existing technology.

[0192] Comparative Example 2

[0193] The structure of the semiconductor refrigerator is as in Example 2, and steps S101, S102 and S110 are the same as those in Example 2, except that steps S103 to S109 are replaced by:

[0194] Cutting the upper substrate, the lower substrate and the first side surface of the first welding column by laser;

[0195] Cutting the upper substrate, the lower substrate, the first welding column and the second side surface of the second welding column by laser;

[0196] Cutting the upper substrate, the lower substrate and the third side surface of the second welding column by laser;

[0197] The fourth side surfaces of the upper substrate and the lower substrate are cut by laser.

[0198] like Fig.21 As shown, in the semiconductor refrigerator obtained by comparative example 2, the parylene film layer and the mask layer of the upper substrate and the lower substrate are completely removed without any residue, but the parylene film layer and the mask layer on the solder pillar are seriously left, and the cut section has serious burrs and wire drawing. It is proved that the semiconductor refrigerator with a low solder pillar structure cannot be film-removed by the existing technology.

[0199] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0200] The embodiments of the present application are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method and core idea of ​​the present application. At the same time, for general technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for coating and removing parylene from a semiconductor refrigerator, wherein the semiconductor refrigerator comprises an upper substrate, a lower substrate, a first soldering column and a second soldering column, wherein the length of the lower substrate is greater than that of the upper substrate, the first soldering column and the second soldering column have the same structure and are spaced apart at a portion of the lower substrate that exceeds the upper substrate, and the heights of the first soldering column and the second soldering column are both higher or lower than the height of the upper substrate, wherein: The method comprises the following steps: S101, forming a mask layer on the upper substrate, the lower substrate, the first solder pillars, and the second solder pillars; S102, coating the inner and outer surfaces of the semiconductor refrigerator with a parylene film layer by a vapor deposition method; S103, fixing the semiconductor refrigerator on the rotating mechanism using a fixing mechanism; S104, when the included angle between the baseline of the rotating mechanism and the laser is 0 degrees, laser cutting the upper substrate, the lower substrate and the first side surface of the first welding column; S105, when the included angle between the baseline of the rotating mechanism and the laser is a first angle α, cutting the first side surface of the second welding column by laser, wherein 0°<α<90°; S106, when the included angle between the baseline of the rotating mechanism and the laser is 90 degrees, laser cutting the upper substrate, the lower substrate, the second welding column and the second side surface of the first welding column; S107, when the included angle between the baseline of the rotating mechanism and the laser is 90+α degrees, cutting the third side surface of the first welding column by laser; S108, when the included angle between the baseline of the rotating mechanism and the laser is 180 degrees, laser cutting the third side surface of the upper substrate, the lower substrate and the second welding column; S109, when the included angle between the baseline of the rotating mechanism and the laser is 270 degrees, laser cutting the fourth side surfaces of the upper substrate, the lower substrate, the first welding column and the second welding column; S110, removing the mask layer and the parylene film layer on the upper substrate, the lower substrate, the first solder pillars, and the second solder pillars; The calculation method of the first angle α is: Wherein, d1 is the distance between the first welding column and the second welding column; w is the width of the first solder column and the second solder column.

2. The method for coating and removing parylene from a semiconductor refrigerator according to claim 1, characterized in that: When the heights of the first welding column and the second welding column are both higher than the height of the upper substrate, and the first angle is 35°<α<90°, and the distance d2 between the first welding column and the second welding column and the upper substrate is greater than a preset threshold, wherein the preset threshold is in the range of 0.2 mm-0.3 mm; S105 further includes: when the included angle between the baseline of the rotating mechanism and the laser is a first angle α, the laser partially cuts the second side surface of the upper substrate blocked by the first welding column and the second welding column; S107 also includes: when the included angle between the baseline of the rotating mechanism and the laser is 90+α degrees, the laser completely cuts the second side surface of the upper substrate blocked by the first welding column and the second welding column.

3. The method for coating and removing parylene from a semiconductor refrigerator according to claim 1, characterized in that: When the heights of the first welding column and the second welding column are both lower than the height of the upper substrate; The specific method of laser cutting the fourth side surface of the first welding column and the second welding column in S109 is: tilting the rotating mechanism downward by a second angle β along the direction in which the fourth side surface of the first welding column and the second welding column extends, and laser cutting the fourth side surface of the first welding column and the second welding column; Among them, 0°<β<90°.

4. The method for coating and removing parylene from a semiconductor refrigerator according to claim 3, characterized in that: The calculation method of the second angle β is: Wherein, d2 is the distance between the first welding column, the second welding column and the upper substrate; h is the height difference between the first solder column, the second solder column and the upper substrate.

5. The method for coating and removing parylene from a semiconductor refrigerator according to claim 1, characterized in that: S101 specifically includes: Adopting a fully automatic vision-guided piezoelectric valve dispensing method to apply glue on the upper substrate, the lower substrate, the first solder column and the second solder column, and then irradiating with a UV lamp to cure the glue to form a mask layer; The thickness of the glue is 0.1-0.2 mm, the glue is acrylic UV light-curing glue, and the wavelength of the UV lamp is 365 nm-395 nm.

6. The method for coating and removing parylene from a semiconductor refrigerator according to claim 1, characterized in that: In S102, the parylene film layer is of C type or F type, and the thickness of the parylene film layer is 10-25 μm.

7. The method for coating and removing parylene from a semiconductor refrigerator according to claim 1, characterized in that: In S104 to S109, the laser has a wavelength of 355-1064 nm, a pulse of femtosecond or picosecond level, and a cutting power of 1-10 W.

8. The method for coating and removing parylene from a semiconductor refrigerator according to claim 1, characterized in that: In S103, the rotating mechanism includes: Rotating shaft; a turntable rotatably disposed on the rotating shaft; A plurality of retractable support rods are evenly spaced between the rotating shaft and the turntable, one end of the retractable support rod is fixedly connected to the rotating shaft, and the other retractable end is connected to the bottom surface of the turntable, and the plurality of retractable support rods cooperate to tilt the turntable.

9. The method for coating and removing parylene from a semiconductor refrigerator according to claim 8, characterized in that: The fixing mechanism is at least one of a suction cup, a pressure plate, and a limiting column.

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