Diamond copper vapor chamber preparation method and diamond copper vapor chamber

Abstract

The invention relates to the technical field of uniform-temperature plates, and provides a preparation method of a diamond copper uniform-temperature plate and the diamond copper uniform-temperature plate. According to the method, a diamond sheet can serve as a base carrier, and the diamond copper uniform-temperature plate can be finally manufactured and formed through metallization copper plating, sintering of a liquid absorption structural body and covering, ionized water injection and sealing on the surface; or the base copper can be used as the base carrier, the diamond molten salt mixture is mixed and embedded in the copper base carrier, the liquid absorption structural body is sintered as well, and the diamond copper vapor chamber is finally manufactured and formed by covering, injecting ionized water and sealing. The preparation method of the diamond copper vapor chamber is simple in step, the vapor chamber which is excellent in heat conductivity coefficient, low in density and total weight and efficient and reliable in vapor chamber performance can be prepared, and the lightweight use requirement of existing electronic equipment can be fully met.

Description

Technical Field

[0001] The present disclosure relates to the technical field of temperature averaging plates, and in particular to a diamond copper temperature averaging plate preparation method and a diamond copper temperature averaging plate. Background Art

[0002] At present, the temperature plate is a very common heat dissipation device in high-power heat dissipation modules. For notebook computers, the temperature plate used in notebook computers is mostly made of copper as the shell material. Copper is a commonly used material with excellent thermal conductivity, with a thermal conductivity of 380W / (m·k), but also 8.9g / cm 3 The density of copper heat spreader, when used in large areas in some laptops with higher power consumption performance, although it provides better thermal conductivity, it also makes the heat dissipation module very heavy, which directly affects the weight of the whole machine and is difficult to meet the demand for lightweight use.

[0003] Therefore, there is an urgent need for a new type of heat dissipation and temperature averaging board on the market to solve the problem that the copper heat averaging board in the prior art has a high density and is difficult to meet the requirements of lightweight use. Summary of the invention

[0004] The disclosed embodiments provide a diamond copper temperature equalizing plate preparation method and a diamond copper temperature equalizing plate, in order to solve the problem that the copper temperature equalizing plate in the prior art has a high density and is difficult to meet the requirements of lightweight use.

[0005] The method for preparing a diamond copper temperature plate provided in an embodiment of the present disclosure comprises the following steps:

[0006] The surface of the diamond sheet is plated with copper to obtain a diamond copper sheet, and a plate-shaped diamond copper cover is made;

[0007] heating and sintering the sintered material on one side of the diamond copper cover plate to form a liquid absorbing structure;

[0008] The diamond copper cover plate is welded and covered to form an inner cavity surrounding the liquid absorbing structure;

[0009] Ionized water is injected into the inner cavity, and after vacuuming, the inner cavity is welded and sealed to form a diamond copper temperature-averaging plate.

[0010] In one embodiment, the preparation process of the liquid-absorbing structure specifically includes:

[0011] Copper powder, copper mesh and copper fiber are mixed as sintering materials, and sintered at a high temperature of 900° C. to 1000° C. in a nitrogen-hydrogen gas environment to form the liquid absorbing structure.

[0012] In one embodiment, the diamond copper cover plate preparation process specifically includes:

[0013] A copper layer with a thickness greater than 1 um is plated on the surface of the diamond sheet by chemical copper plating, and a diamond copper cover plate is made by mechanical milling, wire cutting or laser cutting.

[0014] In one embodiment, the diamond copper cover plate welding and covering process specifically includes:

[0015] At least the diamond copper cover plate is placed in a welding furnace, and a diamond copper shell plate with an inner cavity is formed by silver-based brazing and high-pressure diffusion welding at an environment of 800° C. to 900° C.

[0016] In one embodiment, the method further comprises the following steps after the diamond copper shell plate is prepared:

[0017] The step of welding the liquid injection tube is to place the liquid injection tube in the inner cavity reserved hole of the diamond copper shell, and fix the liquid injection tube by welding with a silver-based welding ring and induction coil heating;

[0018] The step of injecting liquid, vacuuming, sealing and welding is to inject ionized water into the inner cavity of the diamond copper shell through the injection tube, and vacuumize the inner cavity of the diamond copper shell for 20s to 30s, and then seal the injection tube.

[0019] In addition, the embodiment of the present disclosure also provides another method for preparing a diamond copper temperature plate, which comprises the following steps:

[0020] Mixing diamond powder with metal powder and sintering to form a diamond molten salt mixture;

[0021] The diamond molten salt mixture is cleaned and desalted to obtain diamond particles, and the diamond particles are mixed with copper powder and sintered under high pressure to form a diamond copper cover plate;

[0022] The sintering material is heated and sintered on one side of the diamond copper cover plate to form a liquid absorbing structure;

[0023] The diamond copper cover plate is welded and covered to form an inner cavity surrounding the liquid absorbing structure;

[0024] Ion water is injected into the inner cavity, and after vacuuming, the inner cavity is welded and sealed to form a diamond copper temperature-averaging plate.

[0025] In one embodiment, the diamond molten salt mixture sintering process specifically includes:

[0026] Diamond powder, tungsten powder or chromium powder are mixed, and the mixture is sintered at 950° C. in a vacuum heating environment for at least 100 minutes to obtain the diamond molten salt mixture.

[0027] In one embodiment, the diamond copper cover plate sintering process specifically includes:

[0028] The diamond molten salt mixture and copper powder are mixed in proportion, and sintered under a high pressure environment of 800° C. to 900° C. to form the diamond copper cover plate.

[0029] In addition, the diamond copper temperature balancing plate improved by the embodiment of the present disclosure can be prepared by the above-mentioned diamond copper temperature balancing plate preparation method, which includes a first plate cover shell, a second plate cover shell and a liquid absorption structure;

[0030] The first plate cover shell and the second plate cover shell correspond to each other and enclose an inner cavity;

[0031] The liquid-absorbing structure is filled and arranged in the inner cavity, and the liquid-absorbing structure is formed by sintering copper powder, copper mesh and copper fiber;

[0032] Wherein, the first plate cover shell and the second plate cover shell are both made of diamond copper sheet;

[0033] The diamond copper sheet comprises a diamond core and a copper coating plated on the surface of the diamond core;

[0034] Or the diamond copper sheet includes a copper matrix and diamond particles arranged in the copper matrix.

[0035] In one possible implementation manner, the diamond copper temperature plate further includes a support body and a liquid injection tube;

[0036] The support body is arranged in the inner cavity, and two ends thereof are respectively supported and connected to the first plate cover shell and the second plate cover shell;

[0037] One end of the injection tube is in communication with the inner cavity and is used for adding working fluid into the inner cavity and for evacuating the cavity.

[0038] Compared with the prior art, the technical solution provided by the embodiments of the present disclosure has the following advantages:

[0039] The diamond copper temperature equalizing plate preparation method provided in the embodiment of the present disclosure can use a diamond sheet as a base carrier, and finally form a diamond copper temperature equalizing plate by metallization copper plating on the surface, sintering a liquid absorption structure, and covering and injecting ion water to seal; or, can use base copper as a base carrier, mix and embed a diamond molten salt mixture in a copper base carrier, and similarly sinter a liquid absorption structure, cover and inject ion water to seal to finally form a diamond copper temperature equalizing plate. Both methods of preparing diamond copper temperature equalizing plates have simple steps, can prepare temperature equalizing plates with excellent thermal conductivity, small density and total weight, and efficient and reliable temperature equalizing performance, and can fully meet the lightweight use requirements of existing electronic equipment.

[0040] In addition, the diamond copper temperature equalizing plate provided in the embodiment of the present disclosure is prepared by the above-mentioned diamond copper temperature equalizing plate preparation method, and also has the beneficial effects of excellent thermal conductivity, small density and total weight, and efficient and reliable temperature equalizing performance.

[0041] It should be understood that the content described in this section is not intended to identify the key or important features of the embodiments of the present disclosure, nor is it intended to limit the scope of the present disclosure. Other features of the present disclosure will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The above and other objects, features and advantages of the exemplary embodiments of the present disclosure will become readily understood by reading the detailed description below with reference to the accompanying drawings. In the accompanying drawings, several embodiments of the present disclosure are shown in an exemplary and non-limiting manner, in which:

[0043] In the drawings, the same or corresponding reference numerals represent the same or corresponding parts.

[0044] Figure 1 A flow chart showing a first method for preparing a diamond copper temperature homogenizing plate provided in an embodiment of the present disclosure is shown;

[0045] Figure 2 A flow chart showing a second method for preparing a diamond copper temperature homogenizing plate provided in an embodiment of the present disclosure is shown;

[0046] Figure 3 An exploded view of a diamond copper temperature homogenizing plate provided in an embodiment of the present disclosure is shown.

[0047] Explanation of the numbers in the figure: 1. first plate cover shell; 2. second plate cover shell; 3. liquid absorption structure; 4. support body; 5. liquid injection tube. DETAILED DESCRIPTION

[0048] In order to make the purpose, features, and advantages of the present disclosure more obvious and easy to understand, the technical solutions in the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present disclosure.

[0049] The embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings.

[0050] Combination Figure 1 As shown, the embodiment of the present disclosure provides a method for preparing a diamond copper temperature plate, which includes the following steps:

[0051] The surface of the diamond sheet is plated with copper to obtain a diamond copper sheet, and a plate-shaped diamond copper cover is made;

[0052] The sintering material is heated and sintered on one side of the diamond copper cover plate to form a liquid absorbing structure;

[0053] The diamond copper cover plate is welded and covered to form an inner cavity surrounding the liquid absorbing structure;

[0054] Ionized water is injected into the inner cavity, and after vacuuming, the inner cavity is welded and sealed to form a diamond copper temperature-averaging plate.

[0055] The diamond copper temperature-averaging plate preparation method uses diamond sheets as a base carrier and forms a "copper-diamond-copper" sandwich structure by metallization copper plating on the surface. The diamond copper plate of this structure uses diamond sheets as the main component substrate, so compared with the copper plate, the thermal conductivity coefficient can be increased from 380W / (m·k) to 800W / (m·k). After the diamond copper temperature-averaging plate is finally prepared, the thermal resistance of the material can be greatly reduced. When applied to the heat dissipation module, the overall performance of the module can be greatly improved.

[0056] Moreover, the preparation method of the diamond copper temperature-averaging plate also arranges a sintering material on one side of the diamond copper sheet, and sintering the sintering material to form a liquid-absorbing structure with dense capillary pores. After the diamond copper cover plate is welded and covered to form an inner cavity, the liquid-absorbing structure arranged therein can fully absorb ionized water. The liquid-absorbing structure can fully evaporate the locally heated ionized water through the capillary effect, and absorb and replenish it in time, thereby ensuring the uniform temperature and thermal conductivity effect of the diamond copper temperature-averaging plate.

[0057] In addition, compared with copper plates, the density of diamond copper plates is 8.9g / cm 3 Reduced to 5g / cm 3 After being prepared into a diamond copper temperature-averaging plate, the weight of the diamond copper temperature-averaging plate will be reduced by about 40%, and when applied to a heat dissipation module, the weight of the heat dissipation module can be greatly reduced.

[0058] In summary, the method for preparing a diamond copper temperature equalizing plate provided in the embodiment of the present disclosure can use a diamond sheet as a base carrier, and finally form a diamond copper temperature equalizing plate by metallization copper plating on the surface, sintering a liquid absorption structure, and sealing by injecting ion water. The method has simple steps, and can prepare a temperature equalizing plate with excellent thermal conductivity, small density and total weight, and efficient and reliable temperature equalizing performance, which can fully meet the demand for lightweight use of existing electronic equipment.

[0059] In one embodiment, the preparation process of the liquid-absorbing structure specifically includes:

[0060] Copper powder, copper mesh and copper fiber are mixed as sintering materials, and sintered at a high temperature of 900° C. to 1000° C. in a nitrogen-hydrogen gas environment to form a liquid-absorbing structure.

[0061] Copper powder, copper mesh and copper fiber are mixed as sintering materials, so that dense capillaries can be formed in the liquid-absorbing structure after high-temperature sintering, so that the liquid-absorbing structure can fully adsorb ion water through capillary effect and evaporate when locally heated; and sintering at a high temperature of 900°C to 1000°C and in a nitrogen and hydrogen gas environment can, on the one hand, fully ensure the sintering effect, and on the other hand, avoid oxidation during the sintering process.

[0062] In one embodiment, the diamond copper cover plate preparation process specifically includes:

[0063] A copper layer with a thickness greater than 1 um is plated on the surface of the diamond sheet by chemical copper plating, and a diamond copper cover plate is made by mechanical milling, wire cutting or laser cutting.

[0064] Chemical copper plating can ensure that the copper layer is plated on the surface of the diamond sheet with uniform thickness and strong adhesion, and mechanical milling, wire cutting or laser cutting can ultimately produce a diamond copper cover plate that meets size and assembly requirements.

[0065] In one embodiment, the diamond copper cover plate welding and covering process specifically includes:

[0066] At least a diamond copper cover plate is placed in a welding furnace, and a diamond copper shell plate with an inner cavity is formed by silver-based brazing and high-pressure diffusion welding at an environment of 800° C. to 900° C.

[0067] The diamond copper cover plate is placed in a welding furnace and finally prepared into a diamond copper shell plate by silver-based brazing and high-pressure diffusion welding at an environment of 800°C to 900°C, which can fully ensure the welding firmness, the sealing of the welding point, and the thermal conductivity of the welding point.

[0068] In one embodiment, the method further comprises, after the diamond copper shell plate is prepared:

[0069] The step of welding the liquid injection tube is to place the liquid injection tube in the inner cavity reserved hole of the diamond copper shell, and fix the liquid injection tube by welding with a silver-based welding ring and induction coil heating;

[0070] The liquid injection, vacuuming, sealing and welding steps are as follows: ionized water is injected into the inner cavity of the diamond copper shell through the liquid injection tube, and the inner cavity of the diamond copper shell is vacuumed for 20s to 30s, and then the liquid injection tube is sealed.

[0071] The injection tube can be made of copper tube, and it is also fixed by welding with silver-based welding ring and induction coil heating, so as to ensure the welding firmness of the injection tube and the thermal conductivity of the welding point; after the injection tube is welded, ion water can be injected into the inner cavity of the diamond copper shell through the injection tube, and the inner cavity of the diamond copper shell is evacuated for 20s to 30s after injection, so as to ensure that there is no impurity gas in the inner cavity, and finally the injection tube is sealed to prepare the final diamond copper temperature plate.

[0072] In addition, the present disclosure also provides another method for preparing a diamond copper temperature plate, which comprises the following steps:

[0073] Mixing diamond powder with metal powder and sintering to form a diamond molten salt mixture;

[0074] The diamond molten salt mixture is cleaned and desalted to obtain diamond particles, and the diamond particles are mixed with copper powder and sintered under high pressure to form a diamond copper cover plate;

[0075] The sintering material is heated and sintered on one side of the diamond copper cover plate to form a liquid absorbing structure;

[0076] The diamond copper cover plate is welded and covered to form an inner cavity surrounding the liquid absorbing structure;

[0077] Ionized water is injected into the inner cavity, and after vacuuming, the inner cavity is welded and sealed to form a diamond copper temperature-averaging plate.

[0078] Specific, combined Figure 2 To further explain in detail, the diamond copper temperature-averaging plate preparation method is relative to using copper as a base carrier and mixing a diamond molten salt mixture and embedding it in the copper base carrier. During the specific production and preparation, diamond powder is first mixed with metal powder and sintered to form a diamond molten salt mixture, and then the diamond particles are cleaned and desalted to obtain diamond particles. Finally, the diamond particles are mixed with copper powder and sintered under high pressure to form a corresponding diamond copper cover plate. Subsequently, the diamond copper cover plate is finally made into a diamond copper temperature-averaging plate, which is consistent with the steps of the above-mentioned diamond copper temperature-averaging plate preparation method.

[0079] Similarly, the preparation method of the diamond copper temperature equalizing plate can also increase the thermal conductivity from 380W / (m·k) to 800W / (m·k), greatly improving the overall temperature equalization and heat dissipation performance of the module. In addition, the density of the diamond copper temperature equalizing plate is also lower than that of the copper plate, which can also greatly reduce the weight of the heat dissipation module, thereby fully meeting the lightweight use requirements of existing electronic equipment.

[0080] In addition, the specific proportions of diamond and copper in the diamond copper temperature equalizing plate prepared by the above two diamond copper temperature equalizing plate preparation methods can be expressed as diamond proportion = X, copper proportion = 1-X, where X = 0.4 to 0.6.

[0081] In one embodiment, the diamond molten salt mixture sintering process specifically includes:

[0082] Diamond powder, tungsten powder or chromium powder are mixed, and the mixture is sintered at 950° C. in a vacuum heating environment for at least 100 minutes to obtain a diamond molten salt mixture.

[0083] The metal powder is specifically set to be tungsten powder or chromium powder. Tungsten or chromium has the characteristics of high melting point and stable chemical properties. After being mixed with diamond powder, it is sintered at 950°C in a vacuum heating environment for at least 100 minutes to obtain a large-grained diamond molten salt mixture.

[0084] In one embodiment, the diamond copper cover plate sintering process specifically includes:

[0085] The diamond molten salt mixture is mixed with copper powder in proportion and sintered under a high pressure environment of 800° C. to 900° C. to form a diamond copper cover plate.

[0086] By sintering under a high-pressure environment of 800℃~900℃, the copper powder can be melted accordingly, and the molten copper liquid can be equivalent to a bonding liquid to wrap and cover the diamond molten salt mixture. After cooling, it can form a flat diamond copper cover plate.

[0087] In addition, the embodiment of the present disclosure further provides a diamond copper temperature balancing plate, which can be prepared by the above-mentioned diamond copper temperature balancing plate preparation method, and comprises a first plate cover shell 1, a second plate cover shell 2 and a liquid absorption structure 3; the first plate cover shell 1 and the second plate cover shell 2 are correspondingly covered to enclose an inner cavity; the liquid absorption structure 3 is filled and arranged in the inner cavity, and the liquid absorption structure 3 is formed by sintering copper powder, copper mesh and copper fiber;

[0088] Wherein, the first plate cover shell 1 and the second plate cover shell 2 are both made of diamond copper sheet; the diamond copper sheet includes a diamond core and a copper coating plated on the surface of the diamond core; or the diamond copper sheet includes a copper matrix and diamond particles arranged in the copper matrix.

[0089] Specific, combined Figure 3 To further explain in detail, the diamond copper temperature equalizing plate can be prepared by the above-mentioned diamond copper temperature equalizing plate preparation method, so it has the characteristics of excellent thermal conductivity, small density and total weight, and efficient and reliable temperature equalizing performance.

[0090] Moreover, the inner cavity formed by the mutual covering of the first plate cover shell 1 and the second plate cover shell 2 in the diamond copper temperature equalizing plate can completely seal and wrap the liquid absorption structure 3, thereby ensuring the sealing and heat equalizing performance of the liquid absorption structure 3 and the working fluid in the diamond copper temperature equalizing plate.

[0091] In one embodiment, the diamond copper temperature equalizing plate also includes a support body 4 and an injection tube 5; the support body 4 is arranged in the inner cavity, and its two ends are respectively supported and connected to the first plate cover shell 1 and the second plate cover shell 2; one end of the injection tube 5 is conductively connected to the inner cavity, and is used to add working fluid to the inner cavity and to draw a vacuum.

[0092] Specific, combined Figure 3 To further explain in detail, the above-mentioned support body 4 can be specifically but not limited to being set as a copper cylinder of the same height. In this way, multiple support bodies 4 are supported and set in the inner cavity, which can ensure the structural stability of the diamond copper temperature equalizing plate and avoid the problem of bulging or collapse of the diamond copper temperature equalizing plate during use.

[0093] The injection tube 5 can also be made of copper. One end of the injection tube 5 is connected to the inner cavity for adding working fluid to the inner cavity and evacuating the cavity. After adding the working fluid and evacuating the cavity, the injection tube 5 can be sealed, welded and cut off accordingly.

[0094] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0095] The above is only a specific embodiment of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any person skilled in the art who is familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A method for preparing a diamond copper temperature plate, characterized in that: The following steps are involved: The surface of the diamond sheet is plated with copper to obtain a diamond copper sheet, and a plate-shaped diamond copper cover is made; The sintering material is heated and sintered on one side of the diamond copper cover plate to form a liquid absorbing structure; The diamond copper cover plate is welded and covered to form an inner cavity surrounding the liquid absorbing structure; Ionized water is injected into the inner cavity, and after vacuuming, the inner cavity is welded and sealed to form a diamond copper temperature-averaging plate.

2. The method for preparing a diamond copper temperature equalizing plate according to claim 1, characterized in that: The preparation process of the liquid-absorbing structure specifically includes: Copper powder, copper mesh and copper fiber are mixed as sintering materials, and sintered at a high temperature of 900° C. to 1000° C. in a nitrogen-hydrogen gas environment to form the liquid absorbing structure.

3. The method for preparing a diamond copper temperature equalizing plate according to claim 1, characterized in that: The diamond copper cover plate preparation process specifically includes: A copper layer with a thickness greater than 1 um is plated on the surface of the diamond sheet by chemical copper plating, and a diamond copper cover plate is made by mechanical milling, wire cutting or laser cutting.

4. The method for preparing a diamond copper temperature equalizing plate according to claim 1, characterized in that: The diamond copper cover plate welding and covering process specifically includes: At least the diamond copper cover plate is placed in a welding furnace, and a diamond copper shell plate with an inner cavity is formed by silver-based brazing and high-pressure diffusion welding at an environment of 800° C. to 900° C.

5. The method for preparing a diamond copper temperature equalizing plate according to claim 4, characterized in that: Also included after the diamond copper housing plate is prepared: The step of welding the liquid injection tube is to place the liquid injection tube in the inner cavity reserved hole of the diamond copper shell, and fix the liquid injection tube by welding with a silver-based welding ring and induction coil heating; The step of injecting liquid, vacuuming, sealing and welding is to inject ionized water into the inner cavity of the diamond copper shell through the injection tube, and vacuumize the inner cavity of the diamond copper shell for 20s to 30s, and then seal the injection tube.

6. A method for preparing a diamond copper temperature plate, characterized in that: The following steps are involved: Mixing diamond powder with metal powder and sintering to form a diamond molten salt mixture; The diamond molten salt mixture is cleaned and desalted to obtain diamond particles, and the diamond particles are mixed with copper powder and sintered under high pressure to form a diamond copper cover plate; The sintering material is heated and sintered on one side of the diamond copper cover plate to form a liquid absorbing structure; The diamond copper cover plate is welded and covered to form an inner cavity surrounding the liquid absorbing structure; Ion water is injected into the inner cavity, and after vacuuming, the inner cavity is welded and sealed to form a diamond copper temperature-averaging plate.

7. The method for preparing a diamond copper temperature equalizing plate according to claim 6, characterized in that: The diamond molten salt mixture sintering process specifically includes: Diamond powder, tungsten powder or chromium powder are mixed, and the mixture is sintered at 950° C. in a vacuum heating environment for at least 100 minutes to obtain the diamond molten salt mixture.

8. The method for preparing a diamond copper temperature equalizing plate according to claim 6, characterized in that: The diamond copper cover plate sintering process specifically includes: The diamond molten salt mixture and copper powder are mixed in proportion, and sintered under a high pressure environment of 800° C. to 900° C. to form the diamond copper cover plate.

9. A diamond copper temperature balancing plate, which can be prepared by the diamond copper temperature balancing plate preparation method according to claim 1 or 6, characterized in that: include: A first plate cover shell (1) and a second plate cover shell (2), the two correspondingly cover and enclose an inner cavity; A liquid absorbing structure (3) is filled and arranged in the inner cavity, and the liquid absorbing structure (3) is formed by sintering a copper powder, a copper mesh and a copper fiber; Wherein, the first plate cover shell (1) and the second plate cover shell (2) are both made of diamond copper sheets; The diamond copper sheet comprises a diamond core and a copper coating plated on the surface of the diamond core; Or the diamond copper sheet includes a copper matrix and diamond particles arranged in the copper matrix.

10. The diamond copper temperature plate according to claim 9, characterized in that: The diamond copper temperature plate also includes: A support body (4) is arranged in the inner cavity, and its two ends are respectively supported and connected to the first plate cover shell (1) and the second plate cover shell (2); A liquid injection tube (5) has one end connected to the inner cavity and is used for adding working fluid into the inner cavity and for evacuating the cavity.

Images