Magnetic field parameter determination method and apparatus, computer device, and storage medium

Abstract

The application relates to the technical field of magnetic sensor, in particular to a magnetic field parameter determination method and device, computer equipment and a storage medium. The method comprises the following steps: acquiring a first parameter of a three-axis magnetic field obtained by a three-axis magnetic field sensor based on a first magnetic sensitive film set and a second parameter of the three-axis magnetic field obtained based on a second magnetic sensitive film set; the first magnetic sensitive film set comprises two groups of first magnetic sensitive films; the second magnetic sensitive film set comprises two groups of second magnetic sensitive films; each second magnetic sensitive film is in an orthogonal relationship with each first magnetic sensitive film; and the first parameter of the three-axis magnetic field and the second parameter of the three-axis magnetic field are inversely solved to obtain a magnetic field parameter of the three-axis magnetic field. The application realizes simultaneous measurement of an in-plane magnetic field and an out-of-plane magnetic field by using a unified magnetic sensitive film material with high-quality crystal orientation and magnetic properties, avoids temperature coefficient difference problems between different materials, and ensures accurate determination of the magnetic field parameter of the three-axis magnetic field.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of magnetic sensor, in particular to a magnetic field parameter determination method and device, computer equipment and storage medium. BACKGROUND

[0002] With the continuous development of magnetic field measurement technology, three-axis magnetic field sensors have been widely used in geomagnetic navigation, nondestructive testing, power equipment monitoring and other fields.

[0003] The existing three-axis magnetic field sensors usually rely on different kinds of magnetic sensitive materials to measure the in-plane magnetic field and the out-of-plane magnetic field respectively. Due to the different physical properties and temperature coefficients of the materials, it is difficult for the sensor to maintain consistent response characteristics during temperature changes or long-term operation, thereby affecting the accurate determination of the magnetic field parameters of the three-axis magnetic field SUMMARY

[0004] Therefore, it is necessary to provide a magnetic field parameter determination method and device, computer equipment and storage medium capable of ensuring the accurate determination of the magnetic field parameters of the three-axis magnetic field.

[0005] In a first aspect, the present application provides a magnetic field parameter determination method. The method comprises:

[0006] obtaining a three-axis magnetic field first parameter obtained by a three-axis magnetic field sensor based on a first magnetic sensitive film set, and a three-axis magnetic field second parameter obtained based on a second magnetic sensitive film set; wherein the first magnetic sensitive film set comprises two groups of first magnetic sensitive films; the second magnetic sensitive film set comprises two groups of second magnetic sensitive films; each of the second magnetic sensitive films is in an orthogonal relationship with each of the first magnetic sensitive films;

[0007] performing parameter back-solving on the three-axis magnetic field first parameter and the three-axis magnetic field second parameter to obtain the magnetic field parameters of the three-axis magnetic field.

[0008] In one of the embodiments, the obtaining of the three-axis magnetic field first parameter obtained by the three-axis magnetic field sensor based on the first magnetic sensitive film set, and the three-axis magnetic field second parameter obtained based on the second magnetic sensitive film set comprises:

[0009] performing graphical magnetic sensitive detection on the first magnetic sensitive film set to obtain the three-axis magnetic field first parameter;

[0010] performing graphical magnetic sensitive detection on the second magnetic sensitive film set to obtain the three-axis magnetic field second parameter;

[0011] The three-axis magnetic field first parameter is a parameter for the X-axis magnetic field and the Z-axis magnetic field; and the three-axis magnetic field second parameter is a parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0012] In one embodiment, the two sets of first magnetically sensitive films in the first magnetically sensitive film set have opposite first bevel angles; the two sets of second magnetically sensitive films in the second magnetically sensitive film set have opposite second bevel angles.

[0013] In one embodiment, each of the second magnetically sensitive films is orthogonal to each of the first magnetically sensitive films.

[0014] In one embodiment, the first magnetically sensitive film and the second magnetically sensitive film are made of triaxial magnetically sensitive material.

[0015] In one embodiment, the preparation process of the first magnetically sensitive film and the second magnetically sensitive film includes:

[0016] On a single-crystal substrate, a magnetically sensitive thin film is deposited on a triaxial magnetically sensitive material using molecular beam epitaxy or pulsed laser deposition technology to obtain the first magnetically sensitive thin film and the second magnetically sensitive thin film.

[0017] Secondly, this application also provides a device for determining magnetic field parameters. The device includes:

[0018] The acquisition module is used to acquire the first triaxial magnetic field parameter obtained by the triaxial magnetic field sensor based on the first magnetic sensitive film set, and the second triaxial magnetic field parameter obtained based on the second magnetic sensitive film set; wherein, the first magnetic sensitive film set includes two sets of first magnetic sensitive films; and the second magnetic sensitive film set includes two sets of second magnetic sensitive films;

[0019] The analysis module is used to perform inverse parameter solving on the first parameter and the second parameter of the triaxial magnetic field to obtain the magnetic field parameters of the triaxial magnetic field.

[0020] Thirdly, this application also provides a computer device. The computer device includes a memory and a processor, the memory storing a computer program, and the processor executing the computer program to perform the following steps:

[0021] The triaxial magnetic field sensor acquires a first parameter of the triaxial magnetic field based on a first set of magnetically sensitive thin films, and a second parameter of the triaxial magnetic field based on a second set of magnetically sensitive thin films; wherein the first set of magnetically sensitive thin films includes two sets of first magnetically sensitive thin films; and the second set of magnetically sensitive thin films includes two sets of second magnetically sensitive thin films.

[0022] The magnetic field parameters of the triaxial magnetic field are obtained by performing inverse parameter solving on the first parameter and the second parameter of the triaxial magnetic field.

[0023] Fourthly, this application also provides a computer-readable storage medium. The computer-readable storage medium stores a computer program thereon, which, when executed by a processor, performs the following steps:

[0024] The triaxial magnetic field sensor acquires a first parameter of the triaxial magnetic field based on a first set of magnetically sensitive thin films, and a second parameter of the triaxial magnetic field based on a second set of magnetically sensitive thin films; wherein the first set of magnetically sensitive thin films includes two sets of first magnetically sensitive thin films; and the second set of magnetically sensitive thin films includes two sets of second magnetically sensitive thin films.

[0025] The magnetic field parameters of the triaxial magnetic field are obtained by performing inverse parameter solving on the first parameter and the second parameter of the triaxial magnetic field.

[0026] Fifthly, this application also provides a computer program product. The computer program product includes a computer program that, when executed by a processor, performs the following steps:

[0027] The triaxial magnetic field sensor acquires a first triaxial magnetic field parameter based on a first set of magnetically sensitive thin films and a second triaxial magnetic field parameter based on a second set of magnetically sensitive thin films; wherein the first set of magnetically sensitive thin films includes two sets of first magnetically sensitive thin films; the second set of magnetically sensitive thin films includes two sets of second magnetically sensitive thin films; and each second magnetically sensitive thin film is orthogonal to each first magnetically sensitive thin film.

[0028] The magnetic field parameters of the triaxial magnetic field are obtained by performing inverse parameter solving on the first parameter and the second parameter of the triaxial magnetic field.

[0029] The aforementioned method, apparatus, computer equipment, and storage medium for determining magnetic field parameters acquire the first triaxial magnetic field parameter obtained by a triaxial magnetic field sensor based on a first set of magnetically sensitive thin films, and the second triaxial magnetic field parameter obtained based on a second set of magnetically sensitive thin films. This enables parameter acquisition of the magnetic field using a single magnetically sensitive thin film, avoiding the influence of temperature coefficient differences between different materials on measurement accuracy. Furthermore, the magnetic field parameters of the triaxial magnetic field can be obtained by inverse solving the first and second triaxial magnetic field parameters, eliminating the need for complex structural design and operational difficulties, thus reducing manufacturing and time costs for acquiring magnetic field parameters. Compared to traditional triaxial sensors, this application achieves effective acquisition of magnetic field parameters without complex fabrication processes. Moreover, since complex sensor calibration is not required, the efficiency of acquiring magnetic field parameters is further improved. By using a unified magnetically sensitive thin film material with high-quality crystal orientation and magnetic properties, simultaneous measurement of in-plane and out-of-plane magnetic fields is achieved, avoiding the problem of temperature coefficient differences between different materials and ensuring the accurate determination of the magnetic field parameters of the triaxial magnetic field. Attached Figure Description

[0030] Figure 1 An application environment diagram for a method for determining magnetic field parameters provided in this application embodiment;

[0031] Figure 2 A flowchart illustrating the first method for determining magnetic field parameters provided in this application embodiment;

[0032] Figure 3 A flowchart illustrating the second method for determining magnetic field parameters provided in this application embodiment;

[0033] Figure 4 This is a schematic diagram of the structure of a first type of triaxial magnetic field sensor provided in an embodiment of this application;

[0034] Figure 5 This is a schematic diagram of the structure of a second type of triaxial magnetic field sensor provided in an embodiment of this application;

[0035] Figure 6 A structural block diagram of a magnetic field parameter determination device provided in an embodiment of this application;

[0036] Figure 7 This is an internal structural diagram of a computer device in one embodiment. Detailed Implementation

[0037] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0038] The magnetic field parameter determination method provided in this application embodiment can be applied to, for example, Figure 1 In the application environment shown, terminal 102 communicates with server 104 via a network. A data storage system can store the data that server 104 needs to process. The data storage system can be integrated onto server 104 or placed in the cloud or on other network servers. The system acquires the first parameter of the triaxial magnetic field obtained by the triaxial magnetic field sensor based on a first set of magnetically sensitive thin films, and the second parameter of the triaxial magnetic field obtained based on a second set of magnetically sensitive thin films; it then performs inverse parameter decomposition on the first and second parameters of the triaxial magnetic field to obtain the magnetic field parameters of the triaxial magnetic field. Terminal 102 can be, but is not limited to, various personal computers, laptops, smartphones, tablets, IoT devices, and portable wearable devices. IoT devices can include smart speakers, smart TVs, smart air conditioners, smart in-vehicle devices, etc. Portable wearable devices can include smartwatches, smart bracelets, head-mounted devices, etc. Server 104 can be implemented using a standalone server or a server cluster composed of multiple servers.

[0039] In one embodiment, such as Figure 2 As shown, a method for determining magnetic field parameters is provided, which can be applied to... Figure 1 Taking server 104 as an example, the following steps are included:

[0040] S201, acquire the first parameter of the triaxial magnetic field obtained by the triaxial magnetic field sensor based on the first magnetic sensitive film set, and the second parameter of the triaxial magnetic field obtained based on the second magnetic sensitive film set.

[0041] The first magnetically sensitive film set includes two sets of first magnetically sensitive films; the second magnetically sensitive film set includes two sets of second magnetically sensitive films; and each second magnetically sensitive film is orthogonal to each first magnetically sensitive film.

[0042] Furthermore, the second magnetic sensitive film and the first magnetic sensitive film can be the same magnetic sensitive film, that is: the second magnetic sensitive film can be obtained by rotating or tilting the first magnetic sensitive film; here, no restrictions are placed on the structure and position of the second magnetic sensitive film and the first magnetic sensitive film.

[0043] It should be noted that the first and second magnetically sensitive films are made of triaxial magnetically sensitive materials. Triaxial magnetically sensitive materials have strong in-plane magnetic anisotropy and good vertical anomalous Hall effect response; specifically, triaxial magnetically sensitive materials are magnetic thin film materials with an easily magnetized in-plane axis and an out-of-plane vertical magnetization intensity that can be stretched.

[0044] Among them, the triaxial magnetic sensitive material meets the following conditions: (1) It has strong in-plane magnetic anisotropy, forming an easily magnetized in-plane axis, which is suitable for the planar Hall effect and magnetoresistance effect; (2) The in-plane magnetoresistance changes significantly with the parallel magnetic field, while the change in magnetoresistance under the action of the vertical magnetic field can be ignored, ensuring that the in-plane magnetic field is sensitive and the vertical magnetic field is measured independently.

[0045] In one embodiment of this application, the triaxial magnetic sensitive material can be a doped perovskite oxide La1−xSrxMnO3 (LSMO) with out-of-plane crystal orientation, wherein "X" ranges from [0.2 to 0.5], used to adjust the magnetoresistive and linearity.

[0046] To further explain, the preparation process of the first magnetic sensitive film and the second magnetic sensitive film includes: depositing magnetic sensitive films on a triaxial magnetic sensitive material on a single crystal substrate using molecular beam epitaxy or pulsed laser deposition technology to obtain the first magnetic sensitive film and the second magnetic sensitive film.

[0047] Specifically, the thicknesses of the first and second magnetically sensitive films need to be controlled to be 10-50 nanometers to ensure the sensitivity of the in-plane magnetoresistive effect and the linear response in the vertical direction.

[0048] In one embodiment of this application, the single crystal substrate is oriented SrTiO3 or LaAlO3, and the thin film material is La1−xSrxMnO3 (LSMO). By optimizing the annealing process, the thin film crystal is oriented as a plane to form a stable in-plane easily magnetized axis.

[0049] S202, perform inverse parameter solving on the first and second parameters of the triaxial magnetic field to obtain the magnetic field parameters of the triaxial magnetic field.

[0050] It should be noted that the output voltage relationship of the triaxial magnetic field sensor is as follows:

[0051] U12 = Ub + Uh; U13 = -Ub + Uh;

[0052] Where U12 and U13 are the potential differences from electrodes 1 to 2 and 3, respectively, Uh is the anomalous Hall voltage caused by the vertical magnetic field, and Ub is the unequal potential difference caused by the in-plane magnetoresistance effect. By inverse solving, we can obtain Ub=(U12-U13) / 2 and Uh=(U12+U13) / 2. In the absence of a chamfer, Ub is proportional to the magnitude of the in-plane uniaxial magnetic field, i.e., Ub=k1|Bx|, and Uh is proportional to the magnitude of the out-of-plane uniaxial magnetic field, Uh=k2Bz. The sign depends on the direction.

[0053] To further clarify, the first parameter of the triaxial magnetic field is a parameter for the X-axis and Z-axis magnetic fields; the second parameter of the triaxial magnetic field is a parameter for the Y-axis and Z-axis magnetic fields. Furthermore, the two sets of first magnetic sensitive films within the first magnetic sensitive film assembly have opposite first oblique angles; the two sets of second magnetic sensitive films within the second magnetic sensitive film assembly have opposite second oblique angles.

[0054] Therefore, due to the oblique angle of the magnetically sensitive thin film, the measured Ub also includes the influence component of the out-of-plane uniaxial magnetic field, that is: Ub=k11|Bx|+k12Bz.

[0055] The outputs of the two sets of first magnetic sensitive films with opposite first oblique angles in the first magnetic sensitive film set are Ub1=k11|Bx|+k12Bz and Ub2=k11|Bx|-k12Bz, respectively.

[0056] The symbols for Ub1-Ub2 are the same as those for Bx, enabling the inverse solution of the X-axis and Z-axis magnetic field parameters. Furthermore, to ensure the successful acquisition of the magnetic field parameters for the three axes, the second magnetically sensitive film set, containing two sets of second magnetically sensitive films with opposite second oblique angles, is needed to achieve the inverse solution of the Y-axis magnetic field parameters.

[0057] Specifically, the X-axis and Z-axis magnetic field parameters are calculated using the first parameter of the triaxial magnetic field; the Y-axis and Z-axis magnetic field parameters are calculated using the second parameter of the triaxial magnetic field. The Z-axis magnetic field parameter results from the two sets of thin film outputs are then fused, and the components of the X-axis and Y-axis magnetic field parameters are obtained through differential calculations, thus completing the triaxial magnetic field measurement and obtaining the triaxial magnetic field parameters.

[0058] The aforementioned method for determining magnetic field parameters acquires the first triaxial magnetic field parameter obtained by a triaxial magnetic field sensor based on a first set of magnetically sensitive thin films, and the second triaxial magnetic field parameter obtained based on a second set of magnetically sensitive thin films. This enables parameter acquisition of the magnetic field using a single magnetically sensitive thin film, avoiding the influence of temperature coefficient differences between different materials on measurement accuracy. Furthermore, the triaxial magnetic field parameters can be obtained by inversely solving the first and second triaxial magnetic field parameters, eliminating the need for complex structural design and operational difficulties, thus reducing manufacturing and time costs for acquiring magnetic field parameters. Compared to traditional triaxial sensors, this application achieves effective acquisition of magnetic field parameters without complex fabrication processes. Moreover, the elimination of complex sensor calibration operations further improves the efficiency of acquiring magnetic field parameters. By using a unified magnetically sensitive thin film material with high-quality crystal orientation and magnetic properties, simultaneous measurement of in-plane and out-of-plane magnetic fields is achieved, avoiding the problem of temperature coefficient differences between different materials and ensuring the accurate determination of the triaxial magnetic field parameters.

[0059] In one embodiment, such as Figure 3 As shown, when it is necessary to obtain the first parameter of the triaxial magnetic field obtained by the triaxial magnetic field sensor based on the first magnetic sensitive film set, and the second parameter of the triaxial magnetic field obtained based on the second magnetic sensitive film set.

[0060] S301, Perform patterned magnetic sensitivity detection on the first magnetic sensitive film assembly to obtain the first parameter of the triaxial magnetic field.

[0061] Among them, the first parameter of the triaxial magnetic field is the parameter for the X-axis magnetic field and the Z-axis magnetic field.

[0062] S302, perform patterned magnetic sensitivity detection on the second magnetic sensitive film assembly to obtain the second parameter of the triaxial magnetic field.

[0063] Among them, the second parameter of the triaxial magnetic field is a parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0064] It should be noted that the first magnetically sensitive thin film set and the second magnetically sensitive thin film set include a substrate layer, a corresponding magnetically sensitive material, and a patterned structure; wherein, the substrate layer is used to grow the magnetically sensitive material layer; the corresponding magnetically sensitive material is used to sense the magnetic field and generate in-plane magnetoresistance effect and out-of-plane anomalous Hall effect signals; the patterned structure includes a long strip electrode and a probe claw structure at both ends, and the two sets of patterned structures are orthogonal to each other, each realizing 180° in-plane magnetically sensitive detection.

[0065] To further explain, the patterned structure includes: a strip-shaped design and probe electrode claws; the strip-shaped design is used to control the current flow from both ends of the strip, forming a uniform in-plane current; a set of electrodes is arranged on both sides of the short end of the thin film, and the probe electrode claws include a single probe claw (electrode 1) and dual probe claws (electrode 2 and electrode 3); the single probe claw and the dual probe claws are respectively located on both sides of the electrode. Furthermore, the single probe claw is located at the very center of the strip, and the dual probe claws are located on both sides of the center and are equidistant from the center.

[0066] In one embodiment of this application, the first magnetically sensitive thin film set and the second magnetically sensitive thin film set have the same patterned electrode design, namely: (1) elongated electrode: used to generate uniform in-plane current; (2) dual-probe claw and single-probe claw design: used to sense the voltage signal generated by the plane Hall effect and the anomalous Hall effect; (3) the dual-probe claw and single-probe claw are arranged in the two sets of thin films at 90° respectively to ensure the orthogonal measurement of the in-plane and out-of-plane magnetic fields.

[0067] The above-mentioned method for determining magnetic field parameters provides a data foundation for subsequent determination of the magnetic field parameters of the triaxial magnetic field by acquiring the first triaxial magnetic field parameter obtained by the triaxial magnetic field sensor based on the first magnetic sensitive film set and the second triaxial magnetic field parameter obtained based on the second magnetic sensitive film set. Furthermore, it avoids the problem of temperature coefficient differences between different materials and ensures the accurate determination of the magnetic field parameters of the triaxial magnetic field.

[0068] In one embodiment, two sets of first magnetically sensitive films within a first magnetically sensitive film assembly have opposite first oblique angles; and two sets of second magnetically sensitive films within a second magnetically sensitive film assembly have opposite second oblique angles.

[0069] In one embodiment of this application, the oblique angles of the first magnetically sensitive thin film assembly and the second magnetically sensitive thin film assembly of the sensor are ±θ, where θ ranges from [5° to 15°], to ensure that the influence of the vertical magnetic field component on the in-plane magnetoresistance effect reaches the optimal resolution.

[0070] To further explain, the bevel angle is achieved by adjusting the substrate tilt angle during thin film preparation. The specific steps include: adjusting the tilt angle of the single crystal substrate during thin film deposition; forming a magnetically sensitive thin film with a tilt angle using molecular beam epitaxy (MBE) or pulsed laser deposition (PLD) technology; and performing optimized annealing on the thin film to ensure the stability of crystal orientation and magnetic anisotropy.

[0071] In one embodiment, the electrode design employs a patterned elongated structure, such as... Figure 4 As shown, it includes at least four graphical regions 101, 102, 103, and 104, and a signal processing module 105; wherein, 101 and 102 have the same graphics but opposite bevel angles; 103 and 104 have the same graphics but opposite bevel angles; a single probe claw 106 (electrode 1) and dual probe claws 107 and 108 (electrode 2 and electrode 3) are provided at both ends of the strip. The single probe claw 106 is located in the center of the strip, and the dual probe claws 107 and 108 are symmetrically distributed on both sides with equal spacing.

[0072] The first and second magnetically sensitive thin film assemblies have opposite tilt angles to distinguish between in-plane and out-of-plane magnetic field components. The left views of both the first and second magnetically sensitive thin film assemblies are shown below. Figure 5 As shown, the two are tilted at opposite angles. 109 is the substrate used for growth, and 110 is the magnetically sensitive thin film material.

[0073] The above-mentioned method for determining magnetic field parameters can achieve triaxial magnetic field measurement through simple tilting and rotation design, without the need for complex multiple graphic designs; furthermore, the preparation process does not require complex multi-layer heterogeneous structures and fine multi-step processing, which reduces manufacturing costs and improves yield.

[0074] It should be understood that although the steps in the flowcharts of the above embodiments are shown sequentially according to the arrows, these steps are not necessarily executed in the order indicated by the arrows. Unless explicitly stated herein, there is no strict order restriction on the execution of these steps, and they can be executed in other orders. Moreover, at least some steps in the flowcharts of the above embodiments may include multiple steps or multiple stages. These steps or stages are not necessarily completed at the same time, but can be executed at different times. The execution order of these steps or stages is not necessarily sequential, but can be performed alternately or in turn with other steps or at least some of the steps or stages of other steps.

[0075] Based on the same inventive concept, this application also provides a magnetic field parameter determining device for implementing the above-described magnetic field parameter determining method. The solution provided by this device is similar to the solution described in the above method; therefore, the specific limitations in one or more embodiments of the magnetic field parameter determining device provided below can be found in the limitations of the magnetic field parameter determining method described above, and will not be repeated here.

[0076] In one embodiment, such as Figure 6 As shown, a magnetic field parameter determination device is provided, comprising: an acquisition module 10 and an analysis module 20, wherein:

[0077] The acquisition module 10 is used to acquire the first parameter of the triaxial magnetic field obtained by the triaxial magnetic field sensor based on the first set of magnetic sensitive films, and the second parameter of the triaxial magnetic field obtained based on the second set of magnetic sensitive films; wherein, the first set of magnetic sensitive films includes two sets of first magnetic sensitive films; the second set of magnetic sensitive films includes two sets of second magnetic sensitive films; and each second magnetic sensitive film is orthogonal to each first magnetic sensitive film.

[0078] The analysis module 20 is used to perform inverse parameter solving on the first and second parameters of the triaxial magnetic field to obtain the magnetic field parameters of the triaxial magnetic field.

[0079] In one embodiment, patterned magnetic sensitivity detection is performed on the first magnetically sensitive thin film assembly to obtain the first parameter of the triaxial magnetic field;

[0080] The second magnetic susceptibility thin film assembly was patterned and magnetic susceptibility was detected to obtain the second parameter of the triaxial magnetic field;

[0081] Among them, the first parameter of the triaxial magnetic field is the parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the triaxial magnetic field is the parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0082] In one embodiment, two sets of first magnetically sensitive films within a first magnetically sensitive film assembly have opposite first oblique angles; and two sets of second magnetically sensitive films within a second magnetically sensitive film assembly have opposite second oblique angles.

[0083] In one embodiment, each of the second magnetically sensitive films is orthogonal to each of the first magnetically sensitive films.

[0084] In one embodiment, the first magnetically sensitive film and the second magnetically sensitive film are made of triaxial magnetically sensitive material.

[0085] In one embodiment, the preparation process of the first magnetically sensitive film and the second magnetically sensitive film includes:

[0086] On a single-crystal substrate, a magnetically sensitive thin film is deposited on a triaxial magnetically sensitive material using molecular beam epitaxy or pulsed laser deposition technology to obtain a first magnetically sensitive thin film and a second magnetically sensitive thin film.

[0087] The aforementioned magnetic field parameter determination device acquires the first triaxial magnetic field parameter obtained by a triaxial magnetic field sensor based on a first set of magnetically sensitive thin films, and the second triaxial magnetic field parameter obtained based on a second set of magnetically sensitive thin films. This enables parameter acquisition of the magnetic field while using a single magnetically sensitive thin film, avoiding the influence of temperature coefficient differences between different materials on measurement accuracy. Furthermore, the magnetic field parameters of the triaxial magnetic field can be obtained by inversely solving the first and second triaxial magnetic field parameters, eliminating the need for complex structural design and operational difficulties, thus reducing manufacturing and time costs for acquiring magnetic field parameters. Compared to traditional triaxial sensors, this application achieves effective acquisition of magnetic field parameters without complex fabrication processes. Moreover, since complex sensor calibration is not required, the efficiency of acquiring magnetic field parameters is further improved. By using a uniform magnetically sensitive thin film material with high-quality crystal orientation and magnetic properties, simultaneous measurement of in-plane and out-of-plane magnetic fields is achieved, avoiding the problem of temperature coefficient differences between different materials and ensuring the accurate determination of the magnetic field parameters of the triaxial magnetic field.

[0088] The modules in the aforementioned magnetic field parameter determination device can be implemented entirely or partially through software, hardware, or a combination thereof. These modules can be embedded in the processor of a computer device in hardware form or independent of it, or stored in the memory of a computer device in software form, so that the processor can call and execute the operations corresponding to each module.

[0089] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 7As shown, the computer device includes a processor, memory, input / output interface, communication interface, display unit, and input device. The processor, memory, and input / output interface are connected via a system bus, and the communication interface, display unit, and input device are also connected to the system bus via the input / output interface. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The input / output interface is used for exchanging information between the processor and external devices. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, mobile cellular networks, NFC (Near Field Communication), or other technologies. When executed by the processor, the computer program implements a method for determining magnetic field parameters. The display unit is used to form a visually visible image and can be a display screen, projection device, or virtual reality imaging device. The display screen can be an LCD screen or an e-ink screen. The input device of the computer device can be a touch layer covering the display screen, or buttons, trackballs, or touchpads set on the casing of the computer device, or external keyboards, touchpads, or mice, etc.

[0090] Those skilled in the art will understand that Figure 7 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0091] In one embodiment, a computer device is provided, including a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to perform the following steps:

[0092] The triaxial magnetic field first parameter is obtained based on a first set of magnetically sensitive thin films, and the triaxial magnetic field second parameter is obtained based on a second set of magnetically sensitive thin films; wherein, the first set of magnetically sensitive thin films includes two sets of first magnetically sensitive thin films; and the second set of magnetically sensitive thin films includes two sets of second magnetically sensitive thin films.

[0093] The inverse solution of the first and second parameters of the triaxial magnetic field is performed to obtain the magnetic field parameters of the triaxial magnetic field.

[0094] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0095] The first magnetic susceptibility film assembly was patterned and magnetic susceptibility was detected to obtain the first parameter of the triaxial magnetic field;

[0096] The second magnetic susceptibility thin film assembly was patterned and magnetic susceptibility was detected to obtain the second parameter of the triaxial magnetic field;

[0097] Among them, the first parameter of the triaxial magnetic field is the parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the triaxial magnetic field is the parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0098] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0099] The two sets of first magnetic sensitive films in the first magnetic sensitive film set have opposite first oblique angles; the two sets of second magnetic sensitive films in the second magnetic sensitive film set have opposite second oblique angles.

[0100] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0101] Each of the second magnetically sensitive films is orthogonal to each of the first magnetically sensitive films.

[0102] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0103] The first and second magnetically sensitive films are made of triaxial magnetically sensitive materials.

[0104] In one embodiment, the processor, when executing a computer program, also performs the following steps:

[0105] The preparation processes of the first and second magnetically sensitive films include:

[0106] On a single-crystal substrate, a magnetically sensitive thin film is deposited on a triaxial magnetically sensitive material using molecular beam epitaxy or pulsed laser deposition technology to obtain a first magnetically sensitive thin film and a second magnetically sensitive thin film.

[0107] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0108] The triaxial magnetic field first parameter is obtained based on a first set of magnetically sensitive thin films, and the triaxial magnetic field second parameter is obtained based on a second set of magnetically sensitive thin films; wherein, the first set of magnetically sensitive thin films includes two sets of first magnetically sensitive thin films; and the second set of magnetically sensitive thin films includes two sets of second magnetically sensitive thin films.

[0109] The inverse solution of the first and second parameters of the triaxial magnetic field is performed to obtain the magnetic field parameters of the triaxial magnetic field.

[0110] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0111] The first magnetic susceptibility film assembly was patterned and magnetic susceptibility was detected to obtain the first parameter of the triaxial magnetic field;

[0112] The second magnetic susceptibility thin film assembly was patterned and magnetic susceptibility was detected to obtain the second parameter of the triaxial magnetic field;

[0113] Among them, the first parameter of the triaxial magnetic field is the parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the triaxial magnetic field is the parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0114] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0115] The two sets of first magnetic sensitive films in the first magnetic sensitive film set have opposite first oblique angles; the two sets of second magnetic sensitive films in the second magnetic sensitive film set have opposite second oblique angles.

[0116] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0117] Each of the second magnetically sensitive films is orthogonal to each of the first magnetically sensitive films.

[0118] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0119] The first and second magnetically sensitive films are made of triaxial magnetically sensitive materials.

[0120] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0121] The preparation processes of the first and second magnetically sensitive films include:

[0122] On a single-crystal substrate, a magnetically sensitive thin film is deposited on a triaxial magnetically sensitive material using molecular beam epitaxy or pulsed laser deposition technology to obtain a first magnetically sensitive thin film and a second magnetically sensitive thin film.

[0123] In one embodiment, a computer program product is provided, including a computer program that, when executed by a processor, performs the following steps:

[0124] The triaxial magnetic field first parameter is obtained based on a first set of magnetically sensitive thin films, and the triaxial magnetic field second parameter is obtained based on a second set of magnetically sensitive thin films; wherein, the first set of magnetically sensitive thin films includes two sets of first magnetically sensitive thin films; and the second set of magnetically sensitive thin films includes two sets of second magnetically sensitive thin films.

[0125] The inverse solution of the first and second parameters of the triaxial magnetic field is performed to obtain the magnetic field parameters of the triaxial magnetic field.

[0126] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0127] The first magnetic susceptibility film assembly was patterned and magnetic susceptibility was detected to obtain the first parameter of the triaxial magnetic field;

[0128] The second magnetic susceptibility thin film assembly was patterned and magnetic susceptibility was detected to obtain the second parameter of the triaxial magnetic field;

[0129] Among them, the first parameter of the triaxial magnetic field is the parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the triaxial magnetic field is the parameter for the Y-axis magnetic field and the Z-axis magnetic field.

[0130] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0131] The two sets of first magnetic sensitive films in the first magnetic sensitive film set have opposite first oblique angles; the two sets of second magnetic sensitive films in the second magnetic sensitive film set have opposite second oblique angles.

[0132] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0133] Each of the second magnetically sensitive films is orthogonal to each of the first magnetically sensitive films.

[0134] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0135] The first and second magnetically sensitive films are made of triaxial magnetically sensitive materials.

[0136] In one embodiment, when the computer program is executed by a processor, it also performs the following steps:

[0137] The preparation processes of the first and second magnetically sensitive films include:

[0138] On a single-crystal substrate, a magnetically sensitive thin film is deposited on a triaxial magnetically sensitive material using molecular beam epitaxy or pulsed laser deposition technology to obtain a first magnetically sensitive thin film and a second magnetically sensitive thin film.

[0139] It should be noted that the user information (including but not limited to user device information, user personal information, etc.) and data (including but not limited to data used for analysis, data stored, data displayed, etc.) involved in this application are all information and data authorized by the user or fully authorized by all parties, and the collection, use and processing of related data must comply with the relevant laws, regulations and standards of the relevant countries and regions.

[0140] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetic random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can take many forms, such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM). The databases involved in the embodiments provided in this application may include at least one type of relational database and non-relational database. Non-relational databases may include, but are not limited to, blockchain-based distributed databases. The processors involved in the embodiments provided in this application may be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, quantum computing-based data processing logic devices, etc., and are not limited to these.

[0141] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0142] The above embodiments are merely illustrative of several implementation methods of this application, and their descriptions are relatively specific and detailed. However, they should not be construed as limiting the scope of this application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this application should be determined by the appended claims.

Claims

1. A method for determining magnetic field parameters, characterized in that, The method includes: The method acquires a first triaxial magnetic field parameter based on a first set of magnetically sensitive thin films and a second triaxial magnetic field parameter based on a second set of magnetically sensitive thin films. The first set of magnetically sensitive thin films comprises two sets of first magnetically sensitive thin films; the second set of magnetically sensitive thin films comprises two sets of second magnetically sensitive thin films; the two sets of first magnetically sensitive thin films in the first set have opposite first bevel angles; and the two sets of second magnetically sensitive thin films in the second set have opposite second bevel angles. The magnetic field parameters of the triaxial magnetic field are obtained by performing inverse parameter solving on the first parameter and the second parameter of the triaxial magnetic field. The first magnetically sensitive thin film assembly and the second magnetically sensitive thin film assembly contain patterned structures; the patterned structure includes an elongated electrode and detection claw structures located on both sides of the elongated electrode; the elongated electrode is used to control current to flow through both ends of the elongated electrode to form a uniform in-plane current; the detection claw structure includes a single detection claw and a double detection claw; the single detection claw is disposed on one side of the elongated electrode and located at the center position; the double detection claw is symmetrical to the center position and disposed on the other side of the elongated electrode.

2. The method according to claim 1, characterized in that, The acquisition of the first triaxial magnetic field parameter obtained by the triaxial magnetic field sensor based on the first magnetically sensitive thin film set, and the second triaxial magnetic field parameter obtained based on the second magnetically sensitive thin film set, includes: The first magnetic sensitive film assembly is subjected to patterned magnetic sensitivity detection to obtain the first parameter of the triaxial magnetic field; The second magnetically sensitive film assembly is subjected to patterned magnetic sensitivity detection to obtain the second parameter of the triaxial magnetic field; The first parameter of the triaxial magnetic field is a parameter for the X-axis magnetic field and the Z-axis magnetic field; the second parameter of the triaxial magnetic field is a parameter for the Y-axis magnetic field and the Z-axis magnetic field.

3. The method according to claim 1, characterized in that, Each of the second magnetically sensitive films is orthogonal to each of the first magnetically sensitive films.

4. The method according to claim 1, characterized in that, The first magnetically sensitive film and the second magnetically sensitive film are made of triaxial magnetically sensitive material.

5. The method according to claim 4, characterized in that, The preparation processes of the first magnetically sensitive film and the second magnetically sensitive film include: On a single-crystal substrate, a magnetically sensitive thin film is deposited on a triaxial magnetically sensitive material using molecular beam epitaxy or pulsed laser deposition technology to obtain the first magnetically sensitive thin film and the second magnetically sensitive thin film.

6. The method according to claim 4, characterized in that, The triaxial magnetic sensitive material is a doped perovskite oxide with out-of-plane crystal orientation.

7. A magnetic field parameter determination device, characterized in that, The device includes: The acquisition module is used to acquire the first triaxial magnetic field parameter obtained by the triaxial magnetic field sensor based on the first magnetic sensitive film set, and the second triaxial magnetic field parameter obtained based on the second magnetic sensitive film set; wherein, the first magnetic sensitive film set includes two sets of first magnetic sensitive films; the second magnetic sensitive film set includes two sets of second magnetic sensitive films; the two sets of first magnetic sensitive films in the first magnetic sensitive film set have opposite first oblique angles; the two sets of second magnetic sensitive films in the second magnetic sensitive film set have opposite second oblique angles; each second magnetic sensitive film is orthogonal to each first magnetic sensitive film. The analysis module is used to perform inverse parameter solving on the first parameter and the second parameter of the triaxial magnetic field to obtain the magnetic field parameters of the triaxial magnetic field. The first magnetically sensitive thin film assembly and the second magnetically sensitive thin film assembly contain patterned structures; the patterned structure includes an elongated electrode and detection claw structures located on both sides of the elongated electrode; the elongated electrode is used to control current to flow through both ends of the elongated electrode to form a uniform in-plane current; the detection claw structure includes a single detection claw and a double detection claw; the single detection claw is disposed on one side of the elongated electrode and located at the center position; the double detection claw is symmetrical to the center position and disposed on the other side of the elongated electrode.

8. A computer device comprising a memory and a processor, wherein the memory stores a computer program, characterized in that, When the processor executes the computer program, it implements the steps of the method according to any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

10. A computer program product, comprising a computer program, characterized in that, When the computer program is executed by a processor, it implements the steps of the method according to any one of claims 1 to 6.

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