Segmented temperature compensation band-gap reference voltage generation circuit and linear voltage regulator

Abstract

The invention discloses a segmented temperature compensation band-gap reference voltage generation circuit and a linear voltage regulator. The circuit comprises a reference voltage generation circuit, a compensation resistor and a compensation circuit, a control voltage output end of the reference voltage generation circuit is connected with a first end of the compensation resistor, a second end of the compensation resistor is connected with a first power supply, and the second end of the compensation resistor is used for outputting reference voltage; the compensation circuit comprises a basic circuit and at least two cascaded segmented compensation circuits, the basic circuit comprises a first switch and a first resistor which are connected in series between a first power supply and a second power supply, and a control end of the first switch is connected with a control voltage output end; the segmented compensation circuit comprises at least two temperature compensation circuits which are in cascade connection, each temperature compensation circuit comprises a second switch and a second resistor which are connected between the control voltage output end and the second power supply in series, by arranging the segmented compensation circuits, segmented compensation of the temperature is achieved, the compensation precision is improved, and the circuit is simple in structure and low in power consumption.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuits, and in particular to a segmented temperature-compensated bandgap reference voltage generating circuit and a linear voltage regulator. Background Art

[0002] Bandgap reference voltage generation circuits are widely used in various analog integrated circuits, mixed-signal integrated circuits and system integrated chips to provide reference voltages (or reference voltages) to other circuits in the chip.

[0003] As the requirements for circuit accuracy become higher and higher, the traditional bandgap reference voltage generation circuit can no longer meet the circuit performance requirements. The bandgap reference voltage generation circuit includes transistors, and the transistor voltage changes significantly with temperature, resulting in a significant change in the reference voltage over the entire temperature range, making it impossible to provide a stable reference voltage to other circuits. In addition, the traditional bandgap reference voltage generation circuit with temperature compensation has a complex structure and high power consumption. Summary of the invention

[0004] The present invention provides a segmented temperature compensated bandgap reference voltage generating circuit and a linear voltage regulator, which can perform temperature compensation on the bandgap reference voltage generating circuit within the entire temperature range, improve the stability of the output voltage of the bandgap reference voltage generating circuit, and have a simple circuit structure and low power consumption.

[0005] According to one aspect of the present invention, there is provided a segmented temperature compensated bandgap reference voltage generating circuit, comprising: a reference voltage generating circuit, a compensation resistor and a compensation circuit;

[0006] A first terminal of the reference voltage generating circuit is connected to a first power supply, a second terminal of the reference voltage generating circuit is connected to a second power supply, and the reference voltage generating circuit further comprises a control voltage output terminal;

[0007] The control voltage output terminal is connected to the first terminal of the compensation resistor, the second terminal of the compensation resistor is connected to the first power supply, and the second terminal of the compensation resistor is used to output a reference voltage;

[0008] The compensation circuit comprises a basic circuit and at least two cascade-connected segmented compensation circuits, the basic circuit comprises a first switch and a first resistor, the control end of the first switch is connected to the control voltage output end, and the first switch and the first resistor are connected in series between the first power supply and the second power supply;

[0009] The segmented compensation circuit includes at least two cascade-connected temperature compensation circuits, the temperature compensation circuit includes a second switch and a second resistor, the second switch and the second resistor are connected in series between the control voltage output terminal and the second power supply, the control end of the second switch of the first-stage temperature compensation circuit is connected to the first intermediate node, and the control ends of the second switches of the remaining-stage temperature compensation circuits are connected to the second intermediate nodes of the previous-stage temperature compensation circuit, the first intermediate node is a common end connected to the first switch and the first resistor, and the second intermediate node is a common end connected to the second switch and the second resistor belonging to the same temperature compensation circuit;

[0010] The compensation circuit is used to control the conduction state of the basic circuit and the number of conduction segments of the compensation circuit according to temperature changes, so as to adjust the magnitude of the reference voltage.

[0011] Optionally, the first switch and each of the second switches are triodes.

[0012] Optionally, the reference voltage generating circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a third resistor and a fourth resistor;

[0013] The first electrode of the first transistor serves as the first end of the reference voltage generating circuit, the second electrode of the first transistor is connected to the first electrode of the third transistor, the second electrode of the first transistor is also connected to the third electrode of the first transistor, the second electrode of the third transistor is connected to the first end of the third resistor, the second end of the third resistor is connected to the first end of the fourth resistor, and the second end of the fourth resistor serves as the second end of the reference voltage generating circuit;

[0014] The first electrode of the second transistor is connected to the first electrode of the first transistor, the second electrode of the second transistor is connected to the first electrode of the fourth transistor, the third electrode of the second transistor is connected to the third electrode of the first transistor, the second electrode of the fourth transistor is connected to the first end of the fourth resistor, the third electrode of the third transistor is connected to the third electrode of the fourth transistor, and the third electrode of the third transistor serves as the control voltage output end.

[0015] Optionally, the segmented temperature compensated bandgap reference voltage generating circuit further includes a feedback regulation module, a first end of the feedback regulation module is connected to the first end of the reference voltage generating circuit, a second end of the feedback regulation module is connected to the second power supply, a feedback end of the feedback regulation module is connected to an internal node of the reference voltage generating circuit, a third end of the feedback regulation module is connected to the first intermediate node, and the feedback regulation module is used to adjust the size of the resistance of the feedback regulation module according to the size of the current in the reference voltage generating circuit so as to adjust the size of the current in the reference voltage generating circuit.

[0016] Optionally, the feedback regulation module includes: a fifth transistor and a sixth transistor, the first electrode of the fifth transistor serves as the first end of the feedback regulation module, the second electrode of the fifth transistor is connected to the first electrode of the sixth transistor, and the third electrode of the fifth transistor serves as the feedback end of the feedback regulation module;

[0017] The second electrode of the sixth transistor serves as the second end of the feedback regulation module, and the third electrode of the sixth transistor serves as the third end of the feedback regulation module.

[0018] Optionally, the second switch is a triode, and the sixth transistor and the second switch have different polarities.

[0019] Optionally, the segmented temperature compensated bandgap reference voltage generating circuit further includes a compensation capacitor, a first end of the compensation capacitor is connected to the feedback end of the feedback regulation module, and a second end of the compensation capacitor is connected to the second power supply.

[0020] Optionally, the segmented temperature compensated bandgap reference voltage generating circuit further includes a first bias circuit, wherein the first bias circuit includes a seventh transistor and an eighth transistor;

[0021] A first electrode of the seventh transistor is connected to the first power supply, and a second electrode of the seventh transistor is connected to a third electrode of the seventh transistor;

[0022] The first electrode of the eighth transistor is connected to the second electrode of the seventh transistor, the second electrode of the eighth transistor is connected to the second end of the compensation resistor, and the third electrode of the eighth transistor is connected to the first end of the reference voltage generating circuit.

[0023] Optionally, the segmented temperature-compensated bandgap reference voltage generating circuit further includes a second bias circuit, wherein the second bias circuit includes a ninth transistor and a tenth transistor, wherein a first electrode of the ninth transistor is connected to the first power supply, a second electrode of the ninth transistor is connected to a first end of the first switch, and a third electrode of the ninth transistor is connected to a second electrode of the ninth transistor;

[0024] A first electrode of the tenth transistor is connected to the first power supply, a second electrode of the tenth transistor is connected to a first end of the reference voltage generating circuit, and a third electrode of the tenth transistor is connected to a third electrode of the ninth transistor.

[0025] According to another aspect of the present invention, a linear regulator is provided, comprising any one of the above-mentioned segmented temperature compensated bandgap reference voltage generating circuits.

[0026] The technical solution of the embodiment of the present invention realizes segmented compensation of temperature by setting a segmented compensation circuit, reduces the variation of the reference voltage under a wide temperature variation range, improves the compensation accuracy, and ensures the stability of the reference voltage output by the segmented temperature compensation bandgap reference voltage generation circuit. At the same time, the segmented temperature compensation circuit only includes switches and resistors, has a simple structure, occupies a small area, and has low power consumption.

[0027] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0029] Figure 1 It is a structural schematic diagram of a segmented temperature-compensated bandgap reference voltage generating circuit provided by an embodiment of the present invention;

[0030] Figure 2 It is a principle block diagram of a segmented temperature compensated bandgap reference voltage generating circuit provided by an embodiment of the present invention;

[0031] Figure 3 It is a simulation diagram of a segmented temperature compensated bandgap reference voltage generating circuit provided by an embodiment of the present invention;

[0032] Figure 4 It is a simulation diagram of the reference voltage of a traditional bandgap reference voltage generating circuit. DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0034] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0035] Figure 1 A schematic diagram of a segmented temperature compensated bandgap reference voltage generating circuit provided by an embodiment of the present invention, Figure 2 A schematic diagram of a segmented temperature compensated bandgap reference voltage generation circuit provided by an embodiment of the present invention, referring to Figure 1 and Figure 2 , the segmented temperature compensated bandgap reference voltage generating circuit comprises: a reference voltage generating circuit 10, a compensation resistor R0 and a compensation circuit;

[0036] A first terminal of the reference voltage generating circuit 10 is connected to a first power source VDD, a second terminal of the reference voltage generating circuit 10 is connected to a second power source VSS, and the reference voltage generating circuit 10 further includes a control voltage output terminal VBG;

[0037] The control voltage output terminal VBG is connected to the first end of the compensation resistor R0, the second end of the compensation resistor R0 is connected to the first power supply VSS, and the second end of the compensation resistor R0 is used to output a reference voltage Vref;

[0038] The compensation circuit includes a basic circuit 121 and at least two cascade-connected segmented compensation circuits 122, the basic circuit 121 includes a first switch Q1 and a first resistor R1, the control end of the first switch Q1 is connected to the control voltage output end VBG, and the first switch Q1 and the first resistor R1 are connected in series between a first power supply VDD and a second power supply VSS;

[0039] The segmented compensation circuit 122 includes at least two cascade-connected temperature compensation circuits, the temperature compensation circuit includes a second switch and a second resistor, the second switch and the second resistor are connected in series between the control voltage output terminal VBG and the second power supply VSS, the control end of the second switch K21 of the first-stage temperature compensation circuit 122-1 is connected to the first intermediate node A1, and the control ends of the second switches of the remaining stages of temperature compensation circuits are connected to the second intermediate node A2 of the previous stage of temperature compensation circuit, the first intermediate node A1 is the common end of the first switch K1 and the first resistor R1, and the second intermediate node A2 is the common end of the second switch and the second resistor belonging to the same temperature compensation circuit;

[0040] The compensation circuit is used to control the conduction state of the basic circuit 121 and the number of conduction segments of the compensation circuit 122 according to temperature changes, so as to adjust the magnitude of the reference voltage.

[0041] Optionally, when the second end of the compensation resistor R0 is connected to the first power supply VDD, it is an indirect connection, that is, the segmented temperature compensation bandgap reference voltage generation circuit also includes a first bias circuit 11, and the second end of the compensation resistor R0 is connected to the first power supply VDD through the first bias circuit 11. The first bias circuit 11 is used to provide a bias current for the compensation circuit when the basic circuit 121 and at least one level of temperature compensation circuit are turned on. The segmented compensation circuit 122 may include a first-level temperature compensation circuit 122-1 to an N-th level temperature compensation circuit 122-N, a total of N levels of temperature compensation circuits, where N is a positive integer greater than or equal to 2. Figure 2 The arrow in the middle represents the direction of current flow. The more temperature compensation circuits there are, the higher the accuracy of temperature compensation will be, but the circuit structure will also be more complex. Therefore, the number of temperature compensation circuits should be reasonably set according to the needs. Figure 1In the example, N=2 is shown, that is, the segmented compensation circuit includes a two-stage temperature compensation circuit. The first power supply VDD is used to provide a high level, and the second power supply VSS is used to provide a low level. A current flow path is formed between the first power supply VDD, the reference voltage generating circuit 10, and the second power supply VSS, so that the reference voltage before temperature compensation is output at the control voltage output terminal VBG of the reference voltage generating circuit 10. The reference voltage generating circuit 10 can adopt any bandgap reference circuit in the prior art, and is not specifically limited here. Optionally, the reference voltage generating circuit 10 includes a first transistor MP1, a second transistor MP2, a third transistor MP3, a fourth transistor MP4, a third resistor R3 and a fourth resistor R4; the first electrode of the first transistor MP1 is connected to the first power supply VDD as the first end of the reference voltage generating circuit 10, the second electrode of the first transistor MP1 is connected to the first electrode of the third transistor MP3, the second electrode of the first transistor MP1 is also connected to the third electrode of the first transistor MP1, the second electrode of the third transistor MP3 is connected to the first end of the third resistor R3, the second end of the third resistor R3 is connected to the first end of the fourth resistor R4, and the second end of the fourth resistor R4 is connected to the second power supply VDD as the second end of the reference voltage generating circuit 10; the first electrode of the second transistor MP2 is connected to the first electrode of the first transistor MP1, the second electrode of the second transistor MP2 is connected to the first electrode of the fourth transistor MP4, the third electrode of the second transistor MP2 is connected to the third electrode of the first transistor MP1, the second electrode of the fourth transistor MP4 is connected to the first end of the fourth resistor R4, the third electrode of the third transistor MP3 is connected to the third electrode of the fourth transistor MP4, and the third electrode of the third transistor MP3 serves as the control voltage output terminal VBG. Optionally, the first transistor MP1 and the second transistor MP2 are both NMOS transistors, and the third transistor MP3 and the fourth transistor MP4 are both NPN transistors. The first transistor MP1 and the second transistor MP2 are mirror-connected, so the currents in the first transistor MP1 and the second transistor MP2 are the same. The voltage output by the control voltage output terminal VBG is in, Vbe3 is the voltage difference between the third electrode and the second electrode of the third transistor MP3, Vbe4 is the voltage difference between the third electrode and the second electrode of the fourth transistor MP4, K is the Boltzmann constant, T is the thermodynamic temperature, q is the electron charge, n is the emitter area ratio of the fourth transistor MP4 to the third transistor MP3, R40 is the resistance value of the fourth resistor R4, R30 is the resistance value of the third resistor R3, is the current on the third resistor R3, is the voltage across the fourth resistor R4. Vg0 represents the diode voltage at absolute zero temperature, η is a process-related constant, Tr is a constant temperature, T is an arbitrary temperature, and Vbe4 has a high-order term related to temperature. As can be seen from the above, as the temperature changes, the voltage between the base and the emitter of the fourth transistor MP4 changes, resulting in a change in the voltage of the control voltage output terminal VBG, making it impossible for the bandgap reference circuit to provide a stable reference voltage. Therefore, a compensation circuit is provided in this embodiment to compensate for the temperature.

[0042] Each second switch can be a triode. Exemplarily, the second switch K21 of the first-stage temperature compensation circuit and the second switch K22 of the second-stage temperature compensation circuit can both be NPN triodes. When the compensation circuit is not turned on, the reference voltage Vref=V1. As the temperature decreases, the voltage of the control voltage output terminal VBG increases. When the voltage of the control voltage output terminal VBG is greater than the first turn-on voltage and the second turn-on voltage, the first switch Q1 and the second switch K21 of the first-stage temperature compensation circuit are turned on, and the first current I1 flows through the compensation resistor R0, thereby increasing the voltage of the first end of the compensation resistor R0 to achieve temperature compensation. Among them, the first turn-on voltage is the voltage difference between the control end of the first switch Q1 and the second end of the first switch Q1 when the first switch Q1 is turned on, the second turn-on voltage is the voltage difference between the control end (base) and the second end (emitter, that is, the end connected to the second resistor R21 of the first-stage temperature compensation circuit) of the second switch K21 of the first-stage temperature compensation circuit, and the first current I1 is the current flowing through the first-stage temperature compensation circuit.

[0043] When the temperature continues to drop, when the voltage at the control voltage output terminal VBG is greater than the sum of the first turn-on voltage, the second turn-on voltage and the third turn-on voltage, the first switch Q1, the first switch K21 of the first-stage temperature compensation circuit and the second switch K22 of the second-stage temperature compensation circuit are turned on, and the second current I2 flows through the compensation resistor R0, thereby increasing the voltage at the first end of the compensation resistor R0 to achieve temperature compensation. Among them, the third turn-on voltage is the voltage difference between the control end (base) and the second end (emitter, that is, the end connected to the second resistor R22 of the second-stage temperature compensation circuit) of the second switch K22 of the second-stage temperature compensation circuit, and the second current I2 is the current flowing through the second-stage temperature compensation circuit. When the preparation process of the first switch and each second switch is the same, it can be considered that the first turn-on voltage, the second turn-on voltage and the third turn-on voltage are equal. Compensated reference voltage R210 is the resistance value of the second resistor R21 in the first-stage temperature compensation circuit, R220 is the resistance value of the second resistor R22 in the second-stage temperature compensation circuit, and R00 is the resistance value of the compensation resistor R0.

[0044] This embodiment adopts Figure 1The segmented temperature compensation bandgap reference voltage generation circuit shown in the figure is experimentally simulated, and the simulation diagram obtained is as follows Figure 3 shown. Figure 3 A simulation diagram of a segmented temperature compensated bandgap reference voltage generating circuit provided by an embodiment of the present invention, Figure 4 This is a simulation diagram of the reference voltage of a traditional bandgap reference voltage generation circuit, refer to Figure 3 and Figure 4 , Figure 3 The graph includes three groups of curves, the first curve L1 is a curve showing the relationship between the compensated reference voltage V1 and the temperature, the second curve L2 is a curve showing the relationship between the current I1 of the second switch K21 in the first-stage temperature compensation circuit and the temperature, the third curve L3 is a curve showing the relationship between the current I2 of the second switch K22 in the second-stage compensation circuit and the temperature, the abscissas of the first curve L1, the second curve L2 and the third curve L3 are all temperature T in °C, the ordinates of the first curve L1 are voltage in V, the ordinates of the second curve L2 and the third curve L3 are current in A. Figure 4 : is a curve of the relationship between the reference voltage V1 and the temperature T before compensation in the prior art, where the horizontal axis unit is °C and the vertical axis unit is V. Figure 3 and Figure 4 It can be seen that between -50℃ and 10℃, the first switch Q1, the second switch K21 in the first-stage compensation circuit, and the second switch K22 in the second-stage compensation circuit are all turned on. Between 10℃ and 105℃, the first switch Q1 and the second switch K21 in the first-stage compensation circuit are turned on to achieve temperature compensation for the reference voltage generation circuit. After 105℃, the first switch Q1, the second switch K21 in the first-stage compensation circuit, and the second switch K22 in the second-stage compensation circuit are all turned on to achieve temperature compensation for the reference voltage generation circuit. By compensating for the temperature in stages, the fluctuation amplitude of the reference voltage at -15℃ to 130℃ is reduced, and the compensation accuracy is improved.

[0045] In this embodiment, a segmented compensation circuit is provided to achieve segmented compensation for temperature, reduce the variation of the reference voltage under a wide temperature variation range, improve the compensation accuracy, and ensure the stability of the reference voltage output by the segmented temperature compensation bandgap reference voltage generation circuit. At the same time, the segmented temperature compensation circuit only includes switches and resistors, has a simple structure, occupies a small area, and has low power consumption.

[0046] Continue to refer Figure 1Optionally, the segmented temperature compensated bandgap reference voltage generating circuit further includes a feedback regulation module 14, a first end of the feedback regulation module 14 is connected to the first end of the reference voltage generating circuit 10, a second end of the feedback regulation module 14 is connected to the second power supply Vss, a feedback end of the feedback regulation module 14 is connected to an internal node of the reference voltage generating circuit 10, a third end of the feedback regulation module 14 is connected to the first intermediate node A1, and the feedback regulation module 14 is used to adjust the size of the resistance of the feedback regulation module 14 according to the size of the current in the reference voltage generating circuit 10, so as to adjust the size of the current in the reference voltage generating circuit 10.

[0047] Taking the increase of current in the reference voltage generating circuit 10 as an example, as the current increases, the voltage of the internal node of the reference voltage generating circuit 10 increases, so that the resistance of the feedback regulation module 14 decreases, while the total current in the feedback regulation module 14 and the reference voltage generating circuit 10 remains unchanged. As the resistance of the feedback regulation module 14 decreases, the current in the feedback regulation module 14 increases and the current in the reference voltage generating circuit 10 decreases, thereby ensuring that the current in the reference voltage generating circuit 10 is relatively stable.

[0048] Continue to refer Figure 1 Optionally, the feedback regulation module 14 includes: a fifth transistor MP5 and a sixth transistor MP6, the first electrode of the fifth transistor MP5 serves as the first end of the feedback regulation module 14, the second electrode of the fifth transistor MP5 is connected to the first electrode of the sixth transistor MP6, and the third electrode of the fifth transistor MP5 serves as the feedback end of the feedback regulation module 14;

[0049] The second electrode of the sixth transistor MP6 serves as the second end of the feedback regulation module 14 , and the third electrode of the sixth transistor MP6 serves as the third end of the feedback regulation module.

[0050] Optionally, the fifth transistor MP5 may be an NMOS transistor, and the sixth transistor MP6 may be a PNP transistor. The polarity of the sixth transistor MP6 is different from that of the second switch. On the basis of the above embodiments, when the reference voltage generating circuit includes the first transistor MP1, the second transistor MP2, the third transistor MP3, the fourth transistor MP4, the third resistor R3 and the fourth resistor R4, the first electrode of the fifth transistor MP5 is connected to the first electrode of the second transistor MP2, the third electrode of the fifth transistor MP5 is connected to the second electrode of the second transistor MP2, the second electrode of the sixth transistor MP6 is connected to the second power supply VSS, and the third electrode of the sixth transistor MP6 is connected to the first intermediate node A1. The fifth transistor MP5 and the sixth transistor MP6 form a feedback circuit, and the current in the reference voltage generating circuit 10 is adjusted according to the voltage at the internal node (the second electrode of the second transistor MP2) of the reference voltage generating circuit 10, so that the current in the reference voltage generating circuit 10 is maintained at a set value. Specifically, taking the increase of the current in the reference voltage generating circuit 10 as an example, when the current in the reference voltage generating circuit 10 increases, the voltage at the second electrode of the second transistor MP2 increases, and the opening of the fifth transistor MP5 increases, then the current flowing through the branch where the fifth transistor MP5 and the sixth transistor MP6 are located increases, thereby reducing the current flowing through the branch where the second transistor MP2 is located, that is, reducing the current in the reference voltage generating circuit 10, thereby achieving the regulation of the current in the reference voltage generating circuit 10.

[0051] Continue to refer Figure 1 Optionally, the segmented temperature compensated bandgap reference voltage generating circuit further includes a compensation capacitor C1, a first end of the compensation capacitor C1 is connected to the feedback end of the feedback adjustment module 14, and a second end of the compensation capacitor C1 is connected to the second power supply VSS.

[0052] The compensation capacitor C1 can improve the phase margin of the segmented temperature compensation bandgap reference voltage generation circuit and improve the stability of the system.

[0053] Continue to refer Figure 1Optionally, the first bias circuit 11 is used to provide a bias current for the segmented compensation circuit 122. The first end of the first bias circuit 11 is connected to the first power supply VDD, the second end of the first bias circuit 11 is connected to the second end of the compensation resistor R0, and the third end of the first bias circuit 11 is connected to the first end of the reference voltage generating circuit 10. Optionally, the first bias circuit includes a seventh transistor MP7 and an eighth transistor MP8; the first electrode of the seventh transistor MP7 is connected to the first power supply VDD as the first end of the first bias circuit 11, and the second electrode of the seventh transistor MP7 is connected to the third electrode of the seventh transistor MP7; the first electrode of the eighth transistor MP8 is connected to the second electrode of the seventh transistor MP7, the second electrode of the eighth transistor MP8 is connected to the second end of the first bias circuit 11, and the second end of the compensation resistor R0, and the third electrode of the eighth transistor MP8 is connected to the first end of the reference voltage generating circuit 10 (the first electrode of the first transistor MP1) as the third end of the first bias circuit 11. The seventh transistor MP7 and the eighth transistor MP8 are both NMOS tubes, which are used to generate a current flowing to the segmented compensation circuit 122. The first bias circuit 11 includes only two transistors, has a simple structure, and is easy to implement.

[0054] Continue to refer Figure 1 Optionally, the reference voltage generating circuit 10 is indirectly connected to the first power supply VDD. Specifically, the segmented temperature compensated bandgap reference voltage generating circuit further includes a second bias circuit 13, and the reference voltage generating circuit 10 is connected to the first power supply VDD through the second bias circuit 13. The second bias circuit 13 includes a ninth transistor MP9 and a tenth transistor MP10, wherein the first electrode of the ninth transistor MP9 is connected to the first power supply VDD, the second electrode of the ninth transistor MP9 is connected to the first end of the first switch Q1, and the third electrode of the ninth transistor MP9 is connected to the second electrode of the ninth transistor MP9; the first electrode of the tenth transistor MP10 is connected to the first power supply VDD, the second electrode of the tenth transistor MP10 is connected to the first end of the reference voltage generating circuit 10, and the third electrode of the tenth transistor MP10 is connected to the third electrode of the ninth transistor MP9. When the reference voltage generating circuit 10 includes a first transistor MP1, a second transistor MP2, a third transistor MP3, a fourth transistor MP4, a third resistor R3, and a fourth resistor R4, the second electrode of the tenth transistor MP10 is connected to the first electrode of the first transistor MP1 and the first electrode of the second transistor MP2, respectively. Optionally, the ninth transistor MP9 and the tenth transistor MP10 may both be NMOS transistors, and are used to generate a current flowing to the reference voltage generating circuit 10 .

[0055] The embodiment of the present invention also provides a linear voltage regulator or DCDC converter, including the above-mentioned segmented temperature compensated bandgap reference voltage generating circuit, the segmented temperature compensated bandgap reference voltage generating circuit provides a compensated reference voltage to the linear voltage regulator and the DCDC converter, and ensures the stability of the reference voltage in the linear voltage regulator and the DCDC converter. The linear voltage regulator or DCDC converter has the same beneficial effects as the segmented temperature compensated bandgap reference voltage generating circuit, which will not be repeated here.

[0056] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0057] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A segmented temperature compensated bandgap reference voltage generating circuit, characterized in that: include: A reference voltage generating circuit, a compensation resistor and a compensation circuit; A first terminal of the reference voltage generating circuit is connected to a first power supply, a second terminal of the reference voltage generating circuit is connected to a second power supply, and the reference voltage generating circuit further includes a control voltage output terminal; The control voltage output terminal is connected to the first terminal of the compensation resistor, the second terminal of the compensation resistor is connected to the first power supply, and the second terminal of the compensation resistor is used to output a reference voltage; The compensation circuit comprises a basic circuit and at least two cascade-connected segmented compensation circuits, wherein the basic circuit comprises a first switch and a first resistor, wherein a control end of the first switch is connected to the control voltage output end, and the first switch and the first resistor are connected in series between the first power supply and the second power supply; The segmented compensation circuit includes at least two cascade-connected temperature compensation circuits, the temperature compensation circuit includes a second switch and a second resistor, the second switch and the second resistor are connected in series between the control voltage output terminal and the second power supply, the control end of the second switch of the first-stage temperature compensation circuit is connected to the first intermediate node, and the control ends of the second switches of the remaining-stage temperature compensation circuits are connected to the second intermediate nodes of the previous-stage temperature compensation circuit, the first intermediate node is a common end connected to the first switch and the first resistor, and the second intermediate node is a common end connected to the second switch and the second resistor belonging to the same temperature compensation circuit; The compensation circuit is used to control the conduction state of the basic circuit and the number of conduction segments of the compensation circuit according to temperature changes, so as to adjust the magnitude of the reference voltage.

2. The segmented temperature compensated bandgap reference voltage generating circuit according to claim 1, characterized in that: The first switch and each of the second switches are triodes.

3. The segmented temperature compensated bandgap reference voltage generating circuit according to claim 1, characterized in that: The reference voltage generating circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a third resistor and a fourth resistor; The first electrode of the first transistor serves as the first end of the reference voltage generating circuit, the second electrode of the first transistor is connected to the first electrode of the third transistor, the second electrode of the first transistor is also connected to the third electrode of the first transistor, the second electrode of the third transistor is connected to the first end of the third resistor, the second end of the third resistor is connected to the first end of the fourth resistor, and the second end of the fourth resistor serves as the second end of the reference voltage generating circuit; The first electrode of the second transistor is connected to the first electrode of the first transistor, the second electrode of the second transistor is connected to the first electrode of the fourth transistor, the third electrode of the second transistor is connected to the third electrode of the first transistor, the second electrode of the fourth transistor is connected to the first end of the fourth resistor, the third electrode of the third transistor is connected to the third electrode of the fourth transistor, and the third electrode of the third transistor serves as the control voltage output end.

4. The segmented temperature compensated bandgap reference voltage generating circuit according to claim 1, characterized in that: It also includes a feedback regulation module, a first end of the feedback regulation module is connected to the first end of the reference voltage generating circuit, a second end of the feedback regulation module is connected to the second power supply, a feedback end of the feedback regulation module is connected to an internal node of the reference voltage generating circuit, and a third end of the feedback regulation module is connected to the first intermediate node. The feedback regulation module is used to adjust the size of the resistance of the feedback regulation module according to the size of the current in the reference voltage generating circuit to adjust the size of the current in the reference voltage generating circuit.

5. The segmented temperature compensated bandgap reference voltage generating circuit according to claim 4, characterized in that: The feedback regulation module comprises: a fifth transistor and a sixth transistor, the first electrode of the fifth transistor serves as the first end of the feedback regulation module, the second electrode of the fifth transistor is connected to the first electrode of the sixth transistor, and the third electrode of the fifth transistor serves as the feedback end of the feedback regulation module; The second electrode of the sixth transistor serves as the second end of the feedback regulation module, and the third electrode of the sixth transistor serves as the third end of the feedback regulation module.

6. The segmented temperature compensated bandgap reference voltage generating circuit according to claim 5, characterized in that: The second switch is a triode, and the sixth transistor and the second switch have different polarities.

7. The segmented temperature compensated bandgap reference voltage generating circuit according to claim 4, characterized in that: It also includes a compensation capacitor, a first end of the compensation capacitor is connected to the feedback end of the feedback regulation module, and a second end of the compensation capacitor is connected to the second power supply.

8. The segmented temperature compensated bandgap reference voltage generating circuit according to claim 1, characterized in that: Also included is a first bias circuit, the first bias circuit including a seventh transistor and an eighth transistor; A first electrode of the seventh transistor is connected to the first power supply, and a second electrode of the seventh transistor is connected to a third electrode of the seventh transistor; The first electrode of the eighth transistor is connected to the second electrode of the seventh transistor, the second electrode of the eighth transistor is connected to the second end of the compensation resistor, and the third electrode of the eighth transistor is connected to the first end of the reference voltage generating circuit.

9. The segmented temperature compensated bandgap reference voltage generating circuit according to claim 1, characterized in that: Also includes a second bias circuit, the second bias circuit includes a ninth transistor and a tenth transistor, the first electrode of the ninth transistor is connected to the first power supply, the second electrode of the ninth transistor is connected to the first end of the first switch, and the third electrode of the ninth transistor is connected to the second electrode of the ninth transistor; A first electrode of the tenth transistor is connected to the first power supply, a second electrode of the tenth transistor is connected to a first end of the reference voltage generating circuit, and a third electrode of the tenth transistor is connected to a third electrode of the ninth transistor.

10. A linear regulator, characterized in that: The invention comprises a segmented temperature compensated bandgap reference voltage generating circuit as described in any one of claims 1 to 9.

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