A TWS earphone

Abstract

The application provides a TWS earphone. The TWS earphone comprises a shell, a substrate arranged in the shell, a first crystal device and an adapter plate arranged side by side on a surface of the substrate, and the adapter plate comprises a first ground pad. The first ground pad is arranged on a surface of the adapter plate facing the substrate, the adapter plate is electrically connected with the substrate through the first ground pad, so that the adapter plate is grounded. A first part of a first plastic encapsulation layer is arranged on a surface of the first crystal device, a second part of the first plastic encapsulation layer is arranged between the adapter plate and the substrate, and the first part and the second part are integrated. A first shielding metal is arranged on a surface of the first part, and the first shielding metal is electrically connected with the first ground pad, so that the first shielding metal is grounded. The technical scheme of the application can realize mutual shielding between components without increasing layout space, without adding other components, and has simple process and high integration.

Description

[0001] This application is a divisional application. The original application has the application number 202110968469.4 and the original application date is August 23, 2021. The entire contents of the original application are incorporated herein by reference. Technical Field

[0002] This application relates to the field of chip packaging, and more particularly to an electronic device and a chip packaging method. Background Technology

[0003] Electronic devices have consistently trended towards miniaturization, resulting in smaller smartwatches, smart bracelets, and wireless earphones. As electronic devices become smaller and more diverse in function, the number of components used to achieve these functions also increases, leading to a higher component density. This, in turn, places higher demands on the packaging technology of electronic devices.

[0004] For electronic devices with Bluetooth, WiFi, or other data transmission capabilities, see, for example, [see...] Figure 1 Wireless headphones pair with mobile phones via Bluetooth. To enable Bluetooth, WiFi, or other data transmission, electronic devices incorporate antennas, which, along with other components, are encapsulated within the same package. However, during operation, the antenna generates electromagnetic waves. In the confined space, the antenna can interfere with other components, degrading their performance. Prolonged exposure to such conditions can damage components, ultimately harming the electronic device. Summary of the Invention

[0005] This application provides an electronic device and a chip packaging method that can ensure the shielding effect between devices and avoid mutual interference between devices.

[0006] To achieve the above objectives, the embodiments of this application provide the following technical solutions:

[0007] In a first aspect, embodiments of this application provide an electronic device, comprising: a housing; a substrate disposed within the housing; a first crystal device and an adapter plate disposed side-by-side on one side surface of the substrate, the adapter plate including a first grounding pad; the first grounding pad being disposed on the substrate-facing surface of the adapter plate, the adapter plate being electrically connected to the substrate via the first grounding pad to ground the adapter plate; a first molding compound, a first portion of the first molding compound being disposed on the surface of the first crystal device, a second portion of the first molding compound being disposed between the adapter plate and the substrate, the first portion and the second portion being an integral structure; the surface of the first portion being covered with a first shielding metal, the first shielding metal being electrically connected to the first grounding pad to ground the first shielding metal.

[0008] As can be seen from the above technical solution, the first part is located outside the first crystal device. By grounding the first part, a closed Faraday cage can be formed, separating the first crystal device from the adapter board, thereby achieving mutual shielding between the first crystal device and the adapter board. In the process of achieving shielding, no additional layout space is required, and the shielding effect is significant.

[0009] In one implementation, the adapter board further includes interconnect vias, one end of which is connected to a first ground pad, and the other end extends through the surface of the adapter board opposite to the substrate. A first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate and connects to the interconnect via, so that the first shielding metal is connected to the first ground pad through the interconnect via. In this way, the first shielding metal can be grounded by covering the interconnect via, which can achieve grounding of the first shielding metal without adding components, resulting in a simple process and high integration.

[0010] In one implementation, the adapter board further includes interconnect vias and a second ground pad. The second ground pad is disposed on the surface of the adapter board facing away from the substrate. The two ends of the interconnect vias are respectively connected to the first ground pad and the second ground pad. A first shielding metal extends from the surface of the first portion to the surface of the adapter board facing away from the substrate and connects to the second ground pad, so that the first shielding metal is connected to the first ground pad through the second ground pad and the interconnect vias. In this way, the first shielding metal can be grounded through the second ground pad, the interconnect vias, and the first ground pad.

[0011] In one implementation, a second shielding metal is provided, comprising a first shielding segment and a second shielding segment. The first shielding segment is disposed on the side of the adapter plate facing the first crystal device, and one end of the first shielding segment away from the substrate is connected to the first shielding metal. The second shielding segment is disposed on the surface of the adapter plate facing the substrate, one end of the second shielding segment is connected to the first shielding segment, and the other end is connected to the first grounding pad. Thus, the first shielding metal can be grounded through the second shielding segment and the connection between the first shielding segment and the first grounding pad.

[0012] In one implementation, the second shielding metal further includes a third shielding segment disposed on the surface of the adapter plate opposite to the substrate. One end of the third shielding segment is connected to the first shielding segment, and the other end extends a certain distance toward the second grounding pad. The third shielding segment is connected to the first shielding metal.

[0013] In one implementation, a third grounding pad is provided at the contact point between the first shielding metal and the substrate, and the first shielding metal is connected to the third grounding pad to ground the first shielding metal. In this way, the end of the first shielding metal away from the adapter plate can be grounded.

[0014] In one implementation, the adapter plate is distributed at the edge of the substrate.

[0015] In one implementation, the method further includes: a second crystal device disposed on the other surface of the substrate; a second molding compound layer disposed on the surface of the second crystal device; a third shielding metal covering the surface of the second molding compound layer and the side surface of the substrate; and a grounding metal layer inside the substrate, extending from the interior of the substrate to the side surface of the substrate and connected to the third shielding metal. This achieves double-sided encapsulation of the substrate, ensuring that the first crystal device on one side of the substrate and the adapter plate can shield each other, and that the second crystal device on the other side of the substrate is isolated from the outside environment, preventing electromagnetic signal leakage.

[0016] In one implementation, a third shielding metal also covers the side of the second part facing away from the first crystal device, and also covers the side of the adapter plate facing away from the first crystal device.

[0017] In one implementation, the first crystal device includes one or more of the following: NOR flash memory, MOSFET, SoC chip, decoding circuit, charging chip, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip, and sensor.

[0018] In one implementation, the second crystal device includes one or more of the following: NOR flash memory, MOSFET, SoC chip, decoding circuit, charging chip, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip, and sensor.

[0019] In one implementation, the first shielding metal, the second shielding metal, and the third shielding metal are formed by a spraying or sputtering process.

[0020] Secondly, embodiments of this application also provide a chip packaging method, comprising: setting a substrate inside a housing; bonding or soldering a first crystal device to one side surface of the substrate; preparing a first grounding pad on an adapter plate; soldering the adapter plate to one side surface of the substrate via the first grounding pad, the first grounding pad being disposed on the surface of the adapter plate facing the substrate; the first crystal device being disposed in parallel with the adapter plate; the adapter plate being electrically connected to the substrate via the first grounding pad to ground the adapter plate; coating a molding compound on the surface of the first crystal device to form a first portion; coating a molding compound between the adapter plate and the substrate to form a second portion; the first portion and the second portion forming a first molding layer, the first portion and the second portion being an integral structure; after the first portion has cured, covering the surface of the first portion with metal to form a first shielding metal, the first shielding metal being electrically connected to the first grounding pad to ground the first shielding metal.

[0021] As can be seen from the above technical solution, the first part is located outside the first crystal device. By grounding the first part, a closed Faraday cage can be formed, separating the first crystal device from the adapter board, thus achieving mutual shielding between the first crystal device and the adapter board. In the process of achieving shielding, no additional layout space is required, and the shielding effect is significant.

[0022] In one implementation, interconnect vias are fabricated on the adapter board. One end of the interconnect via is connected to a first ground pad, and the other end extends through the surface of the adapter board opposite to the substrate. A first shielding metal extends from the surface of a first portion to the surface of the adapter board opposite to the substrate and connects to the interconnect via, so that the first shielding metal is connected to the first ground pad through the interconnect via. In this way, the first shielding metal can be grounded by covering the interconnect via, achieving grounding of the first shielding metal without adding components. The process is simple and has high integration.

[0023] In one implementation, interconnect vias and a second ground pad are fabricated on the adapter board. The second ground pad is disposed on the surface of the adapter board facing away from the substrate. The two ends of the interconnect vias are connected to the first ground pad and the second ground pad, respectively. A first shielding metal extends from the surface of a first portion to the surface of the adapter board facing away from the substrate and connects to the second ground pad, so that the first shielding metal is connected to the first ground pad through the second ground pad and the interconnect vias. In this way, the first shielding metal can be grounded through the second ground pad, the interconnect vias, and the first ground pad.

[0024] In one implementation, a metal layer is applied to the side of the adapter plate facing the first crystal device to form a first shielding segment, with one end of the first shielding segment away from the substrate connected to the first shielding metal. A metal layer is applied to the surface of the adapter plate facing the substrate to form a second shielding segment, with one end connected to the first shielding segment and the other end connected to the first grounding pad. The first and second shielding segments together form the second shielding metal. Thus, the first shielding metal can be connected to the first grounding pad through the second shielding segment and the first shielding segment, thereby achieving grounding.

[0025] In one implementation, a metal is covered on the surface of the adapter board facing away from the substrate to form a third shielding segment. One end of the third shielding segment is connected to the first shielding segment, and the other end extends a certain distance toward the second grounding pad. The third shielding segment is connected to the first shielding metal. The first shielding segment, the second shielding segment, and the third shielding segment form the second shielding metal.

[0026] In one implementation, a third grounding pad is prepared at the contact point between the first shielding metal and the substrate, and the first shielding metal is connected to the third grounding pad to ground the first shielding metal. In this way, the end of the first shielding metal furthest from the adapter plate is grounded.

[0027] In one implementation, the adapter board is soldered to one side surface of the substrate via a first grounding pad, and the adapter board is distributed along the edge of the substrate.

[0028] In one implementation, a second crystal device is soldered or bonded to the other surface of the substrate; a molding compound is applied to the surface of the second crystal device to form a second molding layer; after the second molding layer has cured, metal is applied to the surface of the second molding layer and the side surface of the substrate to form a third shielding metal; a grounding metal layer is fabricated inside the substrate, extending from the inside of the substrate to the side surface of the substrate and connecting with the third shielding metal. This achieves double-sided encapsulation of the substrate, ensuring that the first crystal device on one side of the substrate and the adapter plate can shield each other, while the second crystal device on the other side of the substrate is also isolated from the outside world, preventing electromagnetic signal leakage.

[0029] In one implementation, metal is covered on the side of the second part opposite to the first crystal device and the side of the adapter plate opposite to the first crystal device to form a third shielding metal.

[0030] In one implementation, one or more of the following are included: NOR flash memory, MOSFET, SoC chip, decoding circuit, charging chip, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip, and sensor.

[0031] In one implementation, one or more of the following are included: NOR flash memory, MOSFET, SoC chip, decoding circuit, charging chip, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip, and sensor.

[0032] In one implementation, the first shielding metal, the second shielding metal, and the third shielding metal are formed by a spraying or sputtering process. Attached Figure Description

[0033] Figure 1 This is a diagram illustrating the connection between a wireless headset and a mobile phone.

[0034] Figure 2 This is a schematic diagram of a current electronic device;

[0035] Figure 3 This is a schematic diagram of the first structure of the electronic device provided in the embodiments of this application;

[0036] Figure 4 This is a schematic diagram of the first Faraday cage of the electronic device provided in the embodiments of this application;

[0037] Figure 5 This is a schematic diagram of a second structure of the electronic device provided in the embodiments of this application;

[0038] Figure 6 This is a schematic diagram of a second type of Faraday cage for the electronic device provided in the embodiments of this application;

[0039] Figure 7 This is a schematic diagram of the third structure of the electronic device provided in the embodiments of this application;

[0040] Figure 8 This is a schematic diagram of a third Faraday cage for the electronic device provided in the embodiments of this application;

[0041] Figure 9 This is a schematic diagram of the fourth structure of the electronic device provided in the embodiments of this application;

[0042] Figure 10 This is a schematic diagram of the fourth Faraday cage of the electronic device provided in the embodiments of this application;

[0043] Figure 11 This is a schematic diagram of the packaging of the peripheral components provided in the embodiments of this application;

[0044] Figure 12 This is a schematic diagram of the fifth structure of the electronic device provided in the embodiments of this application;

[0045] Figure 13 This is a schematic diagram of the fifth type of Faraday cage for the electronic device provided in the embodiments of this application;

[0046] Figure 14 This is a schematic diagram of the first shielded metal grounding provided in an embodiment of this application;

[0047] Figure 15 This is a schematic diagram of a TWS earphone structure provided in an embodiment of this application;

[0048] Figure 16 This is a schematic flowchart of a chip packaging method provided in an embodiment of this application;

[0049] Figure 17 This is an exploded view of a chip packaging method provided in an embodiment of this application;

[0050] Figure 18 This is an exploded view of another first shielding metal package provided in the embodiments of this application;

[0051] Figure 19 This is an exploded view of another first shielding metal package provided in the embodiments of this application;

[0052] Figure 20 This is an exploded view of another first shielding metal package provided in the embodiments of this application;

[0053] Figure 21 This is a schematic flowchart of another chip packaging method provided in the embodiments of this application;

[0054] Figure 22 This is an exploded view of another chip packaging method provided in the embodiments of this application;

[0055] Figure 23 This is a schematic diagram of the structure of a housing for an electronic device provided in an embodiment of this application. Detailed Implementation

[0056] To facilitate understanding of the technical solutions of the embodiments of this application, before describing the specific implementation methods of the embodiments of this application, some technical terms in the technical field to which the embodiments of this application belong will be briefly explained. Among them:

[0057] Reflow soldering involves heating air or nitrogen to a sufficiently high temperature and then blowing it onto a circuit board with components already attached, causing the solder on both sides of the components to melt and bond with the circuit board.

[0058] True wireless stereo (TWS) earbuds, also known as true wireless stereo earbuds, connect to devices such as mobile phones via Bluetooth. TWS earbuds process Bluetooth signals to wirelessly separate the left and right channels, allowing each earbud to be used independently. They feature low latency, fast Bluetooth connection, high transmission speed, and low power consumption.

[0059] Electronic devices have consistently trended towards miniaturization, resulting in smaller smartwatches, smart bracelets, and wireless earphones. As electronic devices become smaller and more diverse in function, the number of components used to achieve these functions also increases, leading to a higher component density. This, in turn, places higher demands on the packaging technology of electronic devices.

[0060] For electronic devices with Bluetooth, WiFi, or other data transmission capabilities, see, for example, [see...] Figure 1 Wireless headphones pair with mobile phones via Bluetooth. To enable Bluetooth, WiFi, or other data transmission, electronic devices incorporate antennas, which, along with other components, are encapsulated within the same package. However, during operation, the antenna generates electromagnetic waves. In the confined space, the antenna can interfere with other components, degrading their performance. Prolonged exposure to such conditions can damage components, ultimately harming the electronic device.

[0061] See Figure 2 This is a schematic diagram of a current electronic device.

[0062] like Figure 2As shown, the electronic device may include: a substrate 01, an adapter plate 02 soldered to one side of the substrate 01, and a first component 03. The adapter plate 02 is a circuit board capable of transmitting signals and generates electromagnetic waves during operation. Since the adapter plate 02 and the first component 03 are arranged side by side on one side of the substrate 01, the electromagnetic waves generated by the adapter plate 02 during operation will directly cause electromagnetic interference to the first component 03.

[0063] To address the aforementioned problems, this application provides an electronic device.

[0064] See Figure 3 This is a schematic diagram of a first structural embodiment of the electronic device provided in this application. See also... Figure 23 This is a schematic diagram of the structure of a housing for an electronic device provided in an embodiment of this application. Figure 3 and Figure 23 It is known that the electronic device may include: housing 13, substrate 1, first crystal device 2, adapter plate 3, first molding layer 4 and first shielding metal 6, with the first crystal device 2 and adapter plate 3 arranged side by side on one side surface of substrate 1.

[0065] In practice, substrate 1 is disposed inside housing 13. A grounding layer is provided inside substrate 1 to enable components electrically connected to substrate 1 to be grounded. The first crystal device 2 can be fixed to substrate 1 by welding or bonding.

[0066] The adapter board 3 may include a first grounding pad 31, which is disposed on the surface of the adapter board 3 facing the substrate 1. The adapter board 3 can be electrically connected to the substrate 1 through the first grounding pad 31 to ground the adapter board 3.

[0067] In some implementations, the adapter board 3 is packaged on the substrate 1 using a ball grid array (BGA) package. BGA solder balls can be formed between the first ground pad 31 and the substrate 1, with the first ground pad 31 providing the attachment points for the BGA solder balls. In this way, the adapter board 3 can be packaged on the substrate 1, and an electrical connection is formed between the adapter board 3 and the substrate 1 through the first ground pad 31 and the BGA solder balls.

[0068] The first molding compound 4 may include a first portion 41 and a second portion 42. The first portion 41 may be disposed on the surface of the first crystal device 2, and the second portion 42 may be disposed between the adapter plate 3 and the substrate 1. The first portion 41 can achieve the effect of encapsulating the first crystal device 2, and the second portion 42 can achieve the effect of filling the space between the adapter plate 3 and the substrate 1, so as to perform functions such as insulation, heat dissipation and dust prevention, and at the same time, prevent the first crystal device 2 and the adapter plate 3 from being displaced or damaged when subjected to external forces.

[0069] Part 41 and Part 42 can be formed from molding compound and shaped using molding jigs.

[0070] It should be understood that the division of the first part 41 and the second part 42 is for ease of description, not for physical meaning, that is, the first part 41 and the second part 42 are a single structure.

[0071] The first shielding metal 6 can cover the surface of the first part 41. The first shielding metal 6 is electrically connected to the first grounding pad 31 to ground the first shielding metal 6. The first shielding metal 6 can be formed on the surface of the first part 41 by spraying or sputtering, and the thickness of the first shielding metal 6 can be designed according to the actual situation.

[0072] from Figure 3 As can be seen, after the first shielding metal 6 is grounded through the first grounding pad 31, it can form a closed space. This space can isolate the first crystal device 2, thus achieving mutual shielding between the first crystal device 2 and the adapter board 3, so that the first crystal device 2 and the adapter board 3 will not interfere with each other.

[0073] In one implementation, the electronic device provided in this application embodiment may further be provided with a third grounding pad 8. The third grounding pad 8 is disposed at the contact point between the first shielding metal 6 and the substrate 1. The first shielding metal 6 is connected to the third grounding pad 8, so that the first shielding metal 6 is grounded through the substrate 1. The third grounding pad 8 may be pre-prepared on the substrate 1.

[0074] Figure 3 The document also specifically illustrates a grounding method for the first shielding metal 6, which is... Figure 3 As can be seen, the adapter board 3 includes an interconnect via 32, one end of which is connected to the first ground pad 31, and the other end extends through the surface of the adapter board 3 opposite to the substrate 1. The first shielding metal 6 extends from the surface of the first portion 41 to the surface of the adapter board 3 opposite to the substrate 1 and is connected to the interconnect via 32, so that the first shielding metal 6 is connected to the first ground pad 31 through the interconnect via 32.

[0075] The interconnect via 32 serves as an electrical connection. After the first shielding metal 6 covers one side of the interconnect via 32, it can be electrically connected to the first ground pad 31 on the other side of the interconnect via 32. In this way, the substrate ground layer, the first shielding metal 6, the interconnect via 32, the first ground pad 31, and the BGA solder balls form a semi-enclosed space, i.e., a "Faraday cage". (See also...) Figure 4 This is a schematic diagram of a first type of Faraday cage for an electronic device provided in an embodiment of this application. Figure 4The area shown in the dashed box can be considered a "Faraday cage". The "Faraday cage" can serve as a shield, ensuring that the first crystal device 2 inside is protected from electromagnetic interference from the adapter plate 3, and also protecting the first crystal device 2 from electromagnetic interference from the external environment. At the same time, it can also protect the adapter plate 3 outside the "Faraday cage" from interference from the first crystal device 2.

[0076] The aperture of the interconnect via 32 can be designed according to actual needs, and this application does not impose specific limitations.

[0077] When preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the interconnect vias 32, in order to avoid the spraying or sputtering process affecting other components of the adapter plate 3, a shielding film can be covered on the adapter plate 3 except for the interconnect vias 32 to serve as a shield.

[0078] See Figure 5 This is a schematic diagram of a second structure of the electronic device provided in an embodiment of this application. Figure 5 It can be seen that the grounding method of the first shielding metal 6 can also be achieved through the following components:

[0079] The adapter board 3 also includes a second grounding pad 33, which is disposed on the surface of the adapter board 3 facing away from the substrate 1. The two ends of the interconnect via 32 are respectively connected to the first grounding pad 31 and the second grounding pad 33. The first shielding metal 6 extends from the surface of the first portion 41 to the surface of the adapter board facing away from the substrate 1 and is connected to the second grounding pad 33, so that the first shielding metal 6 is connected to the first grounding pad 31 through the second grounding pad 33 and the interconnect via 32.

[0080] In this way, the substrate ground layer, the first shielding metal 6, the second ground pad 33, the interconnect via 32, the first ground pad 31, and the BGA solder balls form a semi-enclosed space, i.e., a "Faraday cage". (See also...) Figure 6 This is a schematic diagram of a second Faraday cage for an electronic device provided in an embodiment of this application. Figure 6 The area indicated by the dashed box can be considered a "Faraday cage". The effects that a "Faraday cage" can achieve have been explained in the previous description and will not be repeated here.

[0081] When preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the second grounding pad 33, in order to avoid the spraying or sputtering process affecting other components of the adapter plate 3, a shielding film can be covered on the adapter plate 3 except for the second grounding pad 33 to serve as a shield.

[0082] See Figure 7This is a schematic diagram of a third structure of the electronic device provided in the embodiments of this application. In order to achieve grounding of the first shielding metal 6, a second shielding metal 7 can also be provided on the outside of the adapter plate 3 by spraying or sputtering.

[0083] The second shielding metal 7 may include a first shielding segment 71 and a second shielding segment 72. The first shielding segment 71 is disposed on the side of the adapter plate 3 facing the first crystal device 2, and the end of the first shielding segment 71 away from the substrate 1 is connected to the first shielding metal 6. One end of the second shielding segment 72 is connected to the first shielding segment 71, and the other end is connected to the first grounding pad 31.

[0084] After the first shielding metal 6 is connected to the first shielding section 71, it can be connected to the first grounding pad 31 through the first shielding section 71 and the second shielding section 72, thereby achieving grounding.

[0085] In this way, the substrate ground layer, the first shielding metal 6, the first shielding section 71, the second shielding section 72, the first grounding pad 31, and the BGA solder balls form a semi-enclosed space, i.e., a "Faraday cage". (See also...) Figure 8 This is a schematic diagram of a third Faraday cage structure for the electronic device provided in this application embodiment. Figure 8 The area indicated by the dashed box can be considered a "Faraday cage". The effects that a "Faraday cage" can achieve have been explained in the previous description and will not be repeated here.

[0086] When preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the first shielding section 71, in order to avoid the spraying or sputtering process affecting other components of the adapter plate 3, a shielding film can be covered on the surface of the adapter plate 3 facing away from the substrate 1 to play a shielding role.

[0087] See Figure 9 This is a schematic diagram of a fourth structure of the electronic device provided in an embodiment of this application. Figure 9 It can be seen that in order to achieve grounding of the first shielding metal 6, a second shielding metal 7 can also be set on the outside of the adapter plate 3 by spraying or sputtering.

[0088] In addition to the first shielding section 71 and the second shielding section 72, the second shielding metal 7 also includes a third shielding section 73.

[0089] The first shielding section 71 is disposed on the side of the adapter plate 3 facing the first crystal device 2, and the end of the first shielding section 71 away from the substrate 1 is connected to the first shielding metal 6. One end of the second shielding section 72 is connected to the first shielding section 71, and the other end is connected to the first grounding pad 31. The third shielding section 73 is disposed on the surface of the adapter plate 3 facing away from the substrate 1, and one end of the third shielding section 73 is connected to the first shielding section 71, and the other end extends a certain distance in the direction away from the first crystal device 2.

[0090] Depend on Figure 9 It can be seen that when the third shielding segment 73 extends in the direction close to the second grounding pad 33, the third shielding segment 73 does not come into contact with the second grounding pad 33.

[0091] The first shielding metal 6 can extend in the direction opposite to the first crystal device 2 until it completely covers the third shielding segment 73.

[0092] After the first shielding metal 6 comes into contact with the third shielding section 73, it is connected to the first grounding pad 31 through the third shielding section 73, the first shielding section 71 and the second shielding section 72, thereby achieving grounding.

[0093] In this way, the substrate ground layer, the first shielding metal 6, the third shielding section 73, the first shielding section 71, the second shielding section 72, the first grounding pad 31, and the BGA solder balls form a semi-enclosed space, i.e., a "Faraday cage". (See also...) Figure 10 This is a schematic diagram of the fourth Faraday cage for the electronic device provided in the embodiments of this application. Figure 10 The area shown in the dashed box can be considered a "Faraday cage". The effects that a "Faraday cage" can achieve have been explained in the previous description and will not be repeated here.

[0094] When preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the third shielding section 73, in order to avoid the spraying or sputtering process affecting other components of the adapter plate 3, a shielding film can be set on the surface of the adapter plate 3 facing away from the substrate 1, and the shielding film is ensured not to cover the third shielding section 73, so as to play a shielding role.

[0095] In some implementations, the adapter board 3, which is fabricated with a second shielding metal 7, may also include a first ground pad 31, an interconnect via 32, and a second ground pad 33. The first ground pad 31 can be electrically connected to the substrate 1 via BGA solder balls, and the surface of the second ground pad 33 can be tin-plated. The second ground pad 33 can be connected to other external devices by soldering, so that other external devices can be connected to the first ground pad 31 through the second ground pad 33 and the interconnect via 32. The number of the first ground pad 31, interconnect via 32, and second ground pad 33 included in the adapter board 3 can also be planned according to actual needs, and is not limited to including only one first ground pad 31, one interconnect via 32, and one second ground pad 33.

[0096] In this embodiment, the first crystal device 2 can be encapsulated on the substrate 1 by welding or bonding. For example, see... Figure 9 The first crystal device 2a is encapsulated on the substrate 1 by adhesive bonding and electrically connected to the substrate 1 by bonding wires. The first crystal device 2b is directly soldered onto the substrate 1. It can be understood that the first crystal device 2a, in addition to... Figure 9 In addition to the packaging method shown, other possible packaging methods can be used, and this application does not limit the specific packaging method used.

[0097] In some implementations, the electronic device provided in this application embodiment also includes peripheral components. See also... Figure 11 This is a schematic diagram of the packaging of peripheral components provided in the embodiments of this application. Figure 11 (a) shows Figure 3 Peripheral components of electronic devices Figure 11 (b) shows Figure 5 Peripheral components of electronic devices Figure 11 (c) shows Figure 7 Peripheral components of electronic devices Figure 11 (d) shows Figure 9 The peripheral components of the electronic device can be disposed on one side surface of the substrate 1, specifically on the side of the first shielding metal 6 away from the first crystal device 2, and can be packaged by soldering or bonding processes. The peripheral components can be gravity sensors or other devices that are not easily affected by electromagnetic signal interference.

[0098] In some implementations, the electronic device provided in this application embodiment may include one or more adapter boards 3, and the multiple adapter boards 3 may be arranged along the edge of the substrate 1. The number and specific arrangement of the adapter boards 3 can be designed according to actual conditions, and this application does not impose specific limitations.

[0099] See Figure 12This is a schematic diagram of the fifth structure of the electronic device provided in the embodiments of this application. Figure 12 It can be seen that the adapter plate 3 provided in this embodiment is distributed on the edge of the substrate 1. Because... Figure 12 This is a schematic diagram formed by vertically slicing an electronic device, therefore in Figure 12 In the middle, multiple adapter plates 3 are distributed on both sides of the first crystal device 2.

[0100] Understandable Figure 12 The packaging form of the first crystal device 2 shown is only an example and does not constitute a specific limitation on the packaging form of the first crystal device 2. For example, the first crystal device 2c can be electrically connected to the substrate 1 through BGA solder balls, and the first crystal device 2d can be directly soldered onto the substrate 1.

[0101] See Figure 13 This is a schematic diagram of the fifth type of Faraday cage for the electronic device provided in the embodiments of this application. Figure 13 The area shown in the dashed box can be considered a "Faraday cage," through which... Figure 13 As can be seen, when there are two adapter boards 3, the two ends of the first shielding metal 6 are connected to the first grounding pad 31 through the third shielding section 73, the first shielding section 71, and the second shielding section 72, respectively, to achieve grounding. At this time, the substrate grounding layer, the first shielding metal 6, the two third shielding sections 73, the two first shielding sections 71, the two first grounding pads 31, and the BGA solder balls form a semi-enclosed space, namely a "Faraday cage".

[0102] In some implementations, when there are multiple adapter boards 3, the grounding method of the first shielding metal 6 is not limited to the combination of the third shielding section 73, the first shielding section 71, and the second shielding section 72. It can also be achieved through interconnecting vias 32, etc. For details, please refer to [link / reference needed]. Figure 14 This will not be elaborated upon here.

[0103] For electronic devices with a large number of components, stacking is generally used to package the components while ensuring miniaturization. Taking the electronic device provided in the embodiment of this application as an example, in addition to the components on one side of the substrate 1, components may also be provided on the other side of the substrate 1. Therefore, the shielding of the components on the other side of the substrate 1 should also be ensured during packaging.

[0104] See also Figure 12 The electronic device provided in this application embodiment also includes a second crystal device 9, a second molding layer 10, a third shielding metal 11, and a grounding metal layer 12.

[0105] The second crystal device 9 is disposed on the other surface of the substrate 1, and the second molding layer 10 is disposed on the surface of the second crystal device 9.

[0106] In practice, the second crystal device 9 can be packaged on the substrate 1 by welding or bonding processes.

[0107] The second molding layer 10 can encapsulate the second crystal device 9, providing insulation, heat dissipation, and dust protection, while also preventing the second crystal device 9 from shifting or being damaged when subjected to external forces. The second molding layer 10 can be formed from molding compound and is shaped using a molding fixture.

[0108] The third shielding metal 11 covers the surface of the second molding layer 10 and the side of the substrate 1. The grounding metal layer 12 is located inside the substrate 1 and extends from the inside of the substrate 1 to the side of the substrate 1, and is connected to the third shielding metal 11.

[0109] In practice, the third shielding metal 11 can be formed by spraying or sputtering on the surface of the second molding layer 10 and the side of the substrate 1. The thickness of the third shielding metal 11 can be designed according to the actual situation.

[0110] After the third shielding metal 11 covers the second molding layer 10 and the sides of the substrate 1, it completely encapsulates the second crystal device 9, isolating it from other devices. The third shielding metal 11 can be grounded through a grounding metal layer 12 extending from the interior of the substrate 1, thereby achieving the shielding effect on the second crystal device 9, preventing mutual interference between the second crystal device 9 and other devices, preventing the second crystal device 9 from being subjected to electromagnetic interference from the external environment, and also preventing the second crystal device 9 from interfering with the outside world.

[0111] The third shielding metal 11 can also cover the side of the second part 42 facing away from the first crystal device 2, and can also cover the surface of the adapter plate 3 facing away from the first crystal device 2.

[0112] from Figure 12 As can be seen, a complete shielding layer can be formed by covering the third shielding metal 11, separating the substrate 1 and the second crystal device 9 from the outside world, making the shielding effect more significant.

[0113] After double-sided packaging is completed, the first crystal device 2 on one side of the substrate 1 and the adapter plate 3 can shield each other, and the second crystal device 9 on the other side of the substrate 1 can also be separated from the outside world.

[0114] In some implementations, the first crystal device 2 may include one or more of the following: NOR flash memory, MOSFET, SoC chip, codec IC, charger, RLC (resistor, inductor, capacitor) device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip, and sensor. The second crystal device 9 may include one or more of the following: NOR flash memory, MOSFET, SoC chip, codec IC, charger, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip, and sensor. The first crystal device 2 and the second crystal device 9 may also be other types of chips; this application does not specifically limit their applications.

[0115] In some implementations, through Figure 12 As can be seen, the electronic device provided in this application embodiment also includes a solder resist layer 5, which covers the surface of the adapter board 3 facing away from the substrate 1. During operations such as soldering the adapter board 3 to the substrate 1 using reflow soldering technology and tinning the second grounding pad 33 of the adapter board 3, the location where the solder resist layer 5 is provided ensures that it will not be covered by solder.

[0116] In some implementations, the electronic device provided in this application embodiment can be a TWS earphone. See also Figure 15 This is a schematic diagram of a TWS earphone structure provided in an embodiment of this application. Figure 15It is understood that the TWS earphone package may include: a substrate 1, a first crystal device 2 disposed side-by-side on one side surface of the substrate 1, and an adapter plate 3. The TWS earphone package may include one adapter plate 3, which includes a first ground pad 31 disposed on the surface of the adapter plate 3 facing the substrate 1. The adapter plate 3 is electrically connected to the substrate 1 through the first ground pad 31 to ground the adapter plate 3. Specifically, the adapter plate 3 may be packaged on the substrate 1 using BGA solder balls. The adapter plate 3 may also include interconnect vias 32 and a second ground pad 32, which may be tin-plated. The surface of the first crystal device 2 has a first portion 41, and a second portion 42 is disposed between the adapter plate 3 and the first ground pad 31. The first portion 41 and the second portion 42 are an integral structure, forming a first molding layer 4. It also includes a second shielding metal 7, which includes a first shielding segment 71, a second shielding segment 72, and a third shielding segment 73. The first shielding segment 71 is disposed on the side of the adapter plate 3 facing the first crystal device 2, and the end of the first shielding segment 71 away from the substrate 1 is connected to the first shielding metal 6. One end of the second shielding segment 72 is connected to the first shielding segment 71, and the other end is connected to the first grounding pad 31. The third shielding segment 73 is disposed on the surface of the adapter plate 3 facing away from the substrate 1, one end of the third shielding segment 73 is connected to the first shielding segment 71, and the other end extends a certain distance in the direction away from the first crystal device 2, and is connected to the first shielding metal 6. A third grounding pad 8 is also disposed on the substrate 1, located at the contact point between the first shielding metal 6 and the substrate 1, and the first shielding metal 6 is connected to the third grounding pad 8. Thus, the first shielding metal 6 is grounded through the third grounding pad 8 and the second shielding metal 7, and the substrate 1 has a pre-prepared grounding layer.

[0117] The TWS package also includes a second crystal device 9, a second molding compound 10, a third shielding metal 11, and a grounding metal layer 12. The second crystal device 9 is disposed on the other side surface of the substrate 1, and the second molding compound 10 is disposed on the surface of the second crystal device 9. The third shielding metal 11 covers the surface of the second molding compound 10 and the side surface of the substrate 1. The third shielding metal 11 also covers the side surface of the second portion 42 opposite to the first crystal device 2, and also covers the side surface of the adapter plate 3 opposite to the first crystal device 2. The grounding metal layer 12 is located inside the substrate 1 and extends from the inside of the substrate 1 to the side surface of the substrate 1, connecting with the third shielding metal 11.

[0118] Specifically, the first crystal device 2 can be a NOR flash memory, a SoC chip, and a crystal; the second crystal device 9 can be a charger, a codec IC, a sensor, an RLC device, and a MOSFET, etc.; and the peripheral components can be a gravity sensor.

[0119] It is understandable that when TWS earphones are packaged, the first shielding metal 6 may also include other grounding methods, as described above, and will not be elaborated here.

[0120] This application also provides a chip packaging method, which can be applied to the packaging of electronic devices, especially electronic devices with circuit boards that transmit signals.

[0121] Figure 16 This is a schematic flowchart of a chip packaging method provided in an embodiment of this application. Figure 17 This is an exploded view of a chip packaging method provided in an embodiment of this application.

[0122] The methods provided in the embodiments of this application will be described in detail below, such as... Figure 16 As shown, the method may include the following steps:

[0123] S101: Baking substrate 1.

[0124] The substrate 1 can be a circuit board with ground plane wiring and pads, specifically a printed circuit board (PCB) or a flexible printed circuit board (FPC).

[0125] Because substrate 1 is susceptible to corrosion from moisture during storage, substrate 1 with high moisture content is prone to cracking during encapsulation. To ensure the encapsulation effect of substrate 1, it is baked before encapsulation. The baking temperature and duration can be: 120℃ for 8 hours, 150℃ for 4-6 hours, or 125℃ for 24 hours, etc. The exact baking temperature and duration can be selected according to the actual situation.

[0126] During the fabrication process, substrate 1 is also provided with a third grounding pad 8 to facilitate the subsequent grounding of the first shielding metal 6. The specific fabrication location of the third grounding pad 8 will be described in detail below.

[0127] S102: Print solder paste on one side of substrate 1.

[0128] Solder can act as a flux when soldering and packaging devices.

[0129] S103: A substrate 1 is disposed inside the housing 13;

[0130] S104: The first crystal device 2 is bonded or soldered to one side surface of the substrate 1. A first grounding pad 31 is prepared on the adapter plate 3. The adapter plate 3 is soldered to one side surface of the substrate 1 through the first grounding pad 31. The first grounding pad 31 is disposed on the surface of the adapter plate 3 facing the substrate 1. The first crystal device 2 and the adapter plate 3 are arranged side by side. The adapter plate 3 is electrically connected to the substrate 1 through the first grounding pad 31 so that the adapter plate 3 is grounded.

[0131] In a specific implementation, the adapter board 3 can prepare the first grounding pad 31 in advance, and then weld the adapter board 3 to the substrate 1 after the first grounding pad 31 is prepared.

[0132] The bonding of the first crystal device 2 can specifically include the following steps:

[0133] S1041: Perform plasma cleaning on one side surface of substrate 1.

[0134] The plasma cleaning step can remove excess flux, oil stains, etc. from the surface of substrate 1, preparing it for bonding.

[0135] S1042: Apply adhesive to one side of substrate 1.

[0136] Specifically, this involves applying adhesive at the location where the first crystal device 2 needs to be bonded.

[0137] S1043: The first crystal device 2 is bonded to one side surface of the substrate 1.

[0138] S1044: Bonding wires are applied between the first crystal device 2 and the substrate 1.

[0139] Bonding is a method of achieving electrical connection. After bonding is applied between the first crystal device 2 and the substrate 1, the first crystal device 2 is electrically connected to the substrate 1.

[0140] See also Figure 16 The chip packaging method provided in this application embodiment further includes:

[0141] S105: A molding compound is applied to the surface of the first crystal device 2 to form a first part 41; a molding compound is applied between the adapter plate 3 and the substrate 1 to form a second part 42; the first part 41 and the second part 42 form a first molding layer 4, and the first part 41 and the second part 42 are an integral structure.

[0142] The first part 41 and the second part 42 need to be cured for a period of time. After curing, the first part 41 can achieve the effect of wrapping the first crystal device 2, and the second part 42 can achieve the effect of filling between the adapter plate 3 and the substrate 1, so as to play the functions of insulation, heat dissipation and dust prevention, and at the same time, it can prevent the first crystal device 2 and the adapter plate 3 from being displaced or damaged when subjected to external forces.

[0143] The first part 41 and the second part 42 are formed by means of a molding die. The molding compound may include epoxy resin and silicone resin materials, etc.

[0144] The coating height of the first part 41 can be flush with the height of the adapter plate 3 to ensure that the packaged electronic device has good flatness and to provide a flat surface for the subsequent fabrication of the shielding metal. At the same time, the coating position of the first part 41 at the end away from the first crystal device 2 can be flush with the edge of the third grounding pad 8 to facilitate the subsequent fabrication of the first shielding metal 6.

[0145] Before preparing the first part 41 and the second part 42, the substrate 1 can be plasma cleaned to remove residual adhesive and other substances from the surface of the substrate 1.

[0146] S106: After the first part 41 is cured, metal is covered on the surface of the first part 41 to form the first shielding metal 6. The first shielding metal 6 is electrically connected to the first grounding pad 31 so that the first shielding metal 6 is grounded.

[0147] In practice, the first shielding metal 6 can be covered using spraying or sputtering processes. Since spraying or sputtering processes offer wide coverage, spraying or sputtering the first part 41 may affect the surface of the adapter plate 3 facing away from the substrate 1. Therefore, a shielding film needs to be applied to the surface of the adapter plate 3 facing away from the substrate 1 to provide a shielding effect. The specific coverage area of ​​the shielding film is related to the extension distance of the first shielding metal 6 on the surface of the adapter plate 3 facing away from the substrate 1, which will be detailed below.

[0148] In some implementations, by Figure 11As can be seen, the chip packaging method provided in this application embodiment can also include packaging some peripheral components. The peripheral components can be disposed on one side surface of the substrate 1, specifically on the side of the first shielding metal 6 away from the first crystal device 2, and can be packaged by soldering or bonding processes. The peripheral components can be gravity sensors, etc. The specific preparation steps are as follows: first, solder paste is applied to the surface of the substrate 1 where the peripheral components need to be prepared, and then the peripheral components are soldered to the corresponding positions using reflow soldering technology. When the adapter board 3 is covered with a shielding film, the position of the substrate 1 used for packaging the peripheral components is also covered with a shielding film to avoid the spraying or sputtering of the first shielding metal 6 affecting the subsequent packaging of the peripheral components.

[0149] The chip packaging method provided in this application embodiment further includes the following steps:

[0150] S107: A third grounding pad 8 is prepared at the contact point between the first shielding metal 6 and the substrate 1. The first shielding metal 6 is connected to the third grounding pad 8 so that the first shielding metal 6 is grounded.

[0151] In a specific implementation, the first shielding metal 6 can cover part of the third grounding pad 8 to ensure that the first shielding metal 8 can be connected to the grounding layer of the substrate 1 through the third grounding pad 8.

[0152] In one implementation, the end of the first shielding metal 6 away from the adapter plate 3 is grounded by the third grounding pad 8, and the grounding of the side of the first shielding metal 6 closer to the adapter plate 3 can be achieved by the following S107 and S108.

[0153] See also Figure 17 .

[0154] S108: An interconnect via 32 is prepared on the adapter plate 3. One end of the interconnect via 32 is connected to the first ground pad 31, and the other end extends through the surface of the adapter plate 3 opposite to the substrate 1.

[0155] In practice, this step can be completed before S104, that is, the preparation of the adapter plate 3 is completed before the adapter plate 3 is soldered onto the substrate 1.

[0156] S109: Extend the first shielding metal 6 from the surface of the first portion 41 to the surface of the adapter plate 3 opposite to the substrate 1, and connect it to the interconnect via 32 so that the first shielding metal 6 is connected to the first ground pad 31 through the interconnect via 32.

[0157] In a specific implementation, when the first shielding metal 6 is prepared in S106, S109 can be performed simultaneously to achieve grounding of the first shielding metal 6.

[0158] It should be noted that during the fabrication of the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the interconnect vias 32, to avoid the spraying or sputtering process affecting other components of the adapter plate 3, a shielding film can be applied to the area of ​​the adapter plate 3 excluding the interconnect vias 32 to provide a shielding effect. The specific coverage location of the shielding film can be found in [reference needed]. Figure 17 .

[0159] In one implementation, the end of the first shielding metal 6 away from the adapter plate 3 is grounded by the third grounding pad 8. The grounding of the side of the first shielding metal 6 closer to the adapter plate 3 can also be achieved through the following S110 and S111.

[0160] See Figure 18 This is an exploded view of another first shielding metal package provided in the embodiments of this application.

[0161] S110: An interconnect via 32 and a second ground pad 33 are prepared on the adapter plate 3; the second ground pad 33 is disposed on the surface of the adapter plate 3 facing away from the substrate 1, and the two ends of the interconnect via 32 are respectively connected to the first ground pad 31 and the second ground pad 33.

[0162] In practice, this step can be completed before S103, that is, the preparation of the adapter plate 3 is completed before the adapter plate 3 is soldered onto the substrate 1.

[0163] S111: The first shielding metal 6 extends from the surface of the first portion 41 to the surface of the adapter plate 3 opposite to the substrate 1 and is connected to the second grounding pad 33, so that the first shielding metal 6 is connected to the first grounding pad 31 through the second grounding pad 33 and the interconnecting via 32.

[0164] In a specific implementation, when the first shielding metal 6 is prepared in S106, S111 can be performed simultaneously to ground the first shielding metal 6.

[0165] It should be noted that when preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the second grounding pad 33, in order to avoid the spraying or sputtering process affecting other components of the adapter plate 3, a shielding film can be covered on the adapter plate 3 except for the second grounding pad 33 to serve as a shield.

[0166] In one implementation, the end of the first shielding metal 6 away from the adapter plate 3 is grounded by the third grounding pad 8. The grounding of the side of the first shielding metal 6 closer to the adapter plate 3 can also be achieved through the following S112 and S113.

[0167] See Figure 19This is an exploded view of another first shielding metal package provided in the embodiments of this application.

[0168] S112: A metal is covered on the side of the adapter plate 3 facing the first crystal device 2 to form a first shielding section 71. The end of the first shielding section 71 away from the substrate 1 is connected to the first shielding metal 6.

[0169] S113: Cover the surface of the adapter plate 3 facing the substrate 1 with metal to form a second shielding section 72. One end of the second shielding section 72 is connected to the first shielding section 71, and the other end is connected to the first grounding pad 31.

[0170] The first shielding section 71 and the second shielding section 72 form the second shielding metal 6.

[0171] In practice, the step of forming the second shielding metal 6 is completed before S104, that is, the preparation of the adapter plate 3 is completed before the adapter plate 3 is soldered onto the substrate 1.

[0172] It should be noted that when preparing the first shielding metal 6, since the first shielding metal 6 only covers the first shielding section 71 on the surface of the adapter plate 3 facing away from the substrate 1, in order to avoid the spraying or sputtering process affecting other components of the adapter plate 3, a shielding film can be covered on the surface of the adapter plate 3 facing away from the substrate 1 to play a shielding role.

[0173] In one implementation, the end of the first shielding metal 6 away from the adapter plate 3 is grounded by the third grounding pad 8, and the grounding of the side of the first shielding metal 6 closer to the adapter plate 3 can also be achieved by the following S113.

[0174] The second shielding metal 7 may include not only the first shielding segment 71 and the second shielding segment 72, but may also include a third shielding segment 73 to ground the first shielding metal 6. See also Figure 20 This is an exploded view of another first shielding metal package provided in the embodiments of this application. Specifically:

[0175] S114: Cover the surface of the adapter plate 3 facing away from the substrate 1 with metal to form a third shielding section 73. One end of the third shielding section 73 is connected to the first shielding section 71, and the other end extends a certain distance toward the second grounding pad 33. The third shielding section 73 is connected to the first shielding metal 6.

[0176] The first shielding section 71, the second shielding section 72, and the third shielding section 73 form the second shielding metal 7.

[0177] In practice, the step of forming the second shielding metal 6 is completed before S104, that is, the preparation of the adapter plate 3 is completed before the adapter plate 3 is soldered onto the substrate 1.

[0178] It should be noted that when preparing the first shielding metal 6, on the surface of the adapter plate 3 facing away from the substrate 1, since the first shielding metal 6 only covers the third shielding section 73, in order to avoid the spraying or sputtering process affecting other components of the adapter plate 3, a shielding film can be set on the surface of the adapter plate 3 facing away from the substrate 1, and the shielding film is ensured not to cover the third shielding section 73, so as to play a shielding role.

[0179] In some implementations, the number of adapter boards 3 can be one or more, and the packaging method of adapter board 3 can also be:

[0180] S115: The adapter plate 3 is soldered to one side surface of the substrate 1 through the first grounding pad 31. The adapter plate 3 is distributed on the edge of the substrate 1.

[0181] Multiple adapter plates 3 can be soldered based on S104, and the specific soldering method can be referred to the description in S104. Multiple adapter plates 3 can be arranged along the edge of the substrate 1. The number of adapter plates 3 and their specific arrangement positions can be designed according to the actual situation, and this application does not impose specific limitations.

[0182] In some implementations, for cases where encapsulation is required on both sides of substrate 1, see [link to relevant documentation]. Figure 21 This is a schematic flowchart of another chip packaging method provided in an embodiment of this application. See also... Figure 22 This is an exploded view of another chip packaging method provided in this application embodiment. The specific packaging method may include the following steps:

[0183] S116: Print solder paste on the other side surface of substrate 1.

[0184] In practice, the substrate 1 can be pre-baked before printing solder paste.

[0185] Solder can act as a flux when soldering and packaging devices.

[0186] S117: Solder or bond the second crystal device 9 to the other surface of the substrate 1.

[0187] from Figure 12 As can be seen, the second crystal device 9 can be disposed on the surface of the substrate 1 by soldering, such as directly soldering it onto the substrate 1, for example, the second crystal device 9a. It can also be soldered onto the substrate 1 using BGA solder balls, for example, the second crystal device 9b. The second crystal device 9 can also be disposed on the surface of the substrate 1 by adhesive bonding, for example, the second crystal device 9c. In this case, bonding wires can be applied between the second crystal device 9c and the substrate 1 to electrically connect the second crystal device 9c to the substrate 1.

[0188] In practice, the second crystal device 9a and the second crystal device 9b to be soldered can be soldered onto the substrate 1 using a reflow soldering process. Then, plasma cleaning is performed to remove residual solder paste from the surface of the substrate 1. Adhesive is applied to the location where the second crystal device 9c is packaged, and then the third crystal device 9c is bonded to the substrate 1, followed by bonding wires.

[0189] S118: Apply molding compound to the surface of the second crystal device 9 to form a second molding layer 10.

[0190] In practice, before preparing the second molding layer 10, plasma cleaning should be performed to remove residual adhesive and other substances from the surface of the substrate 1.

[0191] The second molding layer 10 needs to cure for a period of time. After curing, the second molding layer 10 can encapsulate the second crystal device 9, providing insulation, heat dissipation, and dust protection. It also prevents the second crystal device 9 from shifting or being damaged under external forces. The second molding layer 10 can be formed from molding compound and shaped using a molding fixture. Molding compound can include epoxy resin and silicone resin materials, etc.

[0192] In some implementations, when performing double-sided packaging, after the second crystal device 9 and the second molding layer 10 are prepared, the first crystal device 2, the first part 41, the second part 42 and the first shielding metal 6 can be prepared. The specific preparation operations can be referred to S102, S103, S104, S105 and S106.

[0193] See also Figure 21 Before welding the adapter plate 3, in addition to preparing the second shielding metal 7 on the adapter plate 3, a solder resist layer 5 should also be prepared on the surface of the second grounding pad 33.

[0194] S119: After the second molding layer 10 has cured, metal is covered on the surface of the second molding layer 10 and the side of the substrate 1 to form a third shielding metal 11.

[0195] In practice, the third shielding metal 11 can be covered by spraying or sputtering processes.

[0196] Before preparing the third shielding metal 11, tin plating can also be performed on the second grounding pad 33 of the adapter plate 3.

[0197] S120: A ground metal layer 12 is prepared inside the substrate 1, and the ground metal layer 12 extends from the inside of the substrate 1 to the side of the substrate 1 and is connected to the third shielding metal 11.

[0198] In practice, this step can be performed simultaneously when preparing substrate 1.

[0199] In some implementations, the third shielding metal 11 can also cover the side of the second part 42 facing away from the first crystal device 9 and the side of the adapter plate 1 facing away from the first crystal device 9. The specific packaging steps are as follows:

[0200] S121: Metal is covered on the side of the second part 42 opposite to the first crystal device 9 and the side of the adapter plate 3 opposite to the first crystal device 2 to form a third shielding metal 11.

[0201] In some implementations, when packaging electronic devices using the chip packaging method provided in this application, two or more chips can be packaged at once to form a whole of two or more chips. Alternatively, while ensuring chip performance and quality, the whole of two or more chips can be cut into individual chips. For example, Figure 22 In the decomposition steps shown, the single-splitting operation can be performed before S119.

[0202] It should be understood that, Figure 22 The diagram only shows the case where the first shielding metal 6 is grounded through the first shielding section 71, the second shielding section 72, and the third shielding section 73. The case where the first shielding metal 6 is grounded through other devices will not be described in detail here.

[0203] In some embodiments, the electronic devices provided in this application may be miniaturized devices, such as headphones, smart bracelets, and smartwatches.

[0204] The technical solution provided in this application can achieve mutual shielding between components without increasing layout space, and can also prevent leakage of electromagnetic signals. Furthermore, when the chip requires double-sided packaging, the technical solution provided in this application can also achieve electromagnetic signal shielding. In achieving shielding performance, no additional components are required, the process is simple, and the integration is high.

[0205] The above detailed embodiments further illustrate the purpose, technical solution, and beneficial effects of the embodiments of this application. It should be understood that the above are merely specific embodiments of the embodiments of this application and are not intended to limit the protection scope of the embodiments of this application. Any modifications, equivalent substitutions, improvements, etc., made on the basis of the technical solutions of the embodiments of this application should be included within the protection scope of the embodiments of this application.

Claims

1. A TWS earphone, characterized in that, include: case; A substrate is disposed inside the housing: A first crystal device and an adapter board are arranged side-by-side on one side surface of the substrate. The adapter board has a first ground pad, a second ground pad, and interconnect vias. The first ground pad is disposed on the surface of the adapter board facing the substrate, and the adapter board is electrically connected to the substrate through the first ground pad to ground the adapter board. The second ground pad is disposed on the surface of the adapter board facing away from the substrate, and one end of the interconnect via is connected to the first ground pad, and the other end is connected to the second ground pad. The first crystal device has a first portion of a first molding compound on its surface, and the adapter plate and the substrate have a second portion of the first molding compound, the first portion and the second portion being an integral structure. The substrate is further provided with a third grounding pad, which is located at the contact point between the first shielding metal and the substrate. The first part of the surface is covered with the first shielding metal. The first end of the first shielding metal is connected to the third grounding pad. The second end of the first shielding metal extends from the surface of the first part to the surface of the adapter plate opposite to the substrate. The first shielding metal is grounded.

2. The TWS earphone according to claim 1, characterized in that, The first shielding metal is electrically connected to the first grounding pad.

3. The TWS earphone according to claim 2, characterized in that, The first shielding metal is connected to the interconnect via so that the first shielding metal is connected to the first ground pad through the interconnect via.

4. The TWS earphone according to any one of claims 1-3, characterized in that, The second end of the first shielding metal is connected to the second grounding pad, the interconnect via, and the first grounding pad.

5. The TWS earphone according to any one of claims 1-3, characterized in that, Also includes: The second shielding metal includes a first shielding section and a second shielding section; The first shielding section is disposed on the side of the adapter plate facing the first crystal device, and the end of the first shielding section away from the substrate is connected to the first shielding metal. The second shielding section is disposed on the surface of the adapter plate facing the substrate. One end of the second shielding section is connected to the first shielding section, and the other end is connected to the first grounding pad.

6. The TWS earphone according to claim 5, characterized in that, The second shielding metal also includes a third shielding segment, which is disposed on the surface of the adapter plate opposite to the substrate. One end of the third shielding segment is connected to the first shielding segment, and the other end extends a certain distance toward the second grounding pad. The third shielding segment is connected to the first shielding metal.

7. The TWS earphone according to any one of claims 1-3, characterized in that, The second end of the first shielding metal covers a portion of the surface of the adapter plate facing away from the substrate.

8. The TWS earphone according to any one of claims 1-3, characterized in that, The adapter plate is distributed at the edge of the substrate.

9. The TWS earphone according to claim 5, characterized in that, Also includes: A second crystal device is disposed on another surface of the substrate; A second molding compound is disposed on the surface of the second crystal device; A third shielding metal is applied to the surface of the second molding layer and the side of the substrate. A grounding metal layer is located inside the substrate and extends from the inside of the substrate to the side of the substrate, and is connected to the third shielding metal.

10. The TWS earphone according to claim 9, characterized in that, The third shielding metal also covers the side of the second part facing away from the first crystal device, and also covers the side of the adapter plate facing away from the first crystal device.

11. The TWS earphone according to any one of claims 1-3, characterized in that, The first crystal device includes: NOR flash memory, MOSFET, SoC chip, decoding circuit, charging chip, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip, and one or more of the following sensors.

12. The TWS earphone according to claim 9 or 10, characterized in that, The second crystal device includes: NOR flash memory, MOSFET, SoC chip, decoding circuit, charging chip, RLC device, crystal, Bluetooth chip, RF chip, WiFi chip, NFC chip, and one or more of the following sensors.

13. The TWS earphone according to claim 9, characterized in that, The first shielding metal, the second shielding metal, and the third shielding metal are formed by spraying or sputtering processes.

14. The TWS earphone according to any one of claims 1-3, characterized in that, The adapter board includes a plurality of interconnect vias, and the first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate, and is connected to a portion of the plurality of interconnect vias.

15. The TWS earphone according to claim 4, characterized in that, The second end of the first shielding metal covers a portion of the surface of the adapter plate facing away from the substrate.

16. The TWS earphone according to claim 5, characterized in that, The second end of the first shielding metal covers a portion of the surface of the adapter plate facing away from the substrate.

17. The TWS earphone according to claim 6, characterized in that, The second end of the first shielding metal covers a portion of the surface of the adapter plate facing away from the substrate.

18. The TWS earphone according to claim 4, characterized in that, The adapter plate is distributed at the edge of the substrate.

19. The TWS earphone according to claim 5, characterized in that, The adapter plate is distributed at the edge of the substrate.

20. The TWS earphone according to claim 4, characterized in that, The adapter board includes a plurality of interconnect vias, and the first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate, and is connected to a portion of the plurality of interconnect vias.

21. The TWS earphone according to claim 5, characterized in that, The adapter board includes a plurality of interconnect vias, and the first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate, and is connected to a portion of the plurality of interconnect vias.

22. The TWS earphone according to claim 6, characterized in that, The adapter board includes a plurality of interconnect vias, and the first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate, and is connected to a portion of the plurality of interconnect vias.

23. The TWS earphone according to claim 7, characterized in that, The adapter board includes a plurality of interconnect vias, and the first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate, and is connected to a portion of the plurality of interconnect vias.

24. The TWS earphone according to claim 8, characterized in that, The adapter board includes a plurality of interconnect vias, and the first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate, and is connected to a portion of the plurality of interconnect vias.

25. The TWS earphone according to claim 9, characterized in that, The adapter board includes a plurality of interconnect vias, and the first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate, and is connected to a portion of the plurality of interconnect vias.

26. The TWS earphone according to claim 10, characterized in that, The adapter board includes a plurality of interconnect vias, and the first shielding metal extends from the surface of the first portion to the surface of the adapter board opposite to the substrate, and is connected to a portion of the plurality of interconnect vias.

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