Broadband electromagnetic wave adjustable metamaterial scatterer with double-layer three-dimensional structure

Abstract

The broadband electromagnetic wave adjustable metamaterial scatterer of the double-layer three-dimensional structure comprises a lower layer assembly arranged on the lower portion and used for absorbing low frequency and an upper layer assembly positively used for absorbing high frequency, and the lower layer assembly comprises a horizontally-laid substrate and a plurality of lower layer plates arranged on the vertical substrate. The plurality of lower layer plates are laid in parallel, first PIN diodes are arranged in the lower layer plates, first inductors are further arranged on the side surfaces of the lower layer plates, and the upper layer assembly is arranged above the lower layer assembly; by arranging the broadband adjustable absorber with the double-layer three-dimensional structure, the upper layer structure is mainly responsible for low-frequency electromagnetic absorption, and the lower layer structure is mainly responsible for high-frequency electromagnetic absorption; on one hand, the energy loss of the electromagnetic absorber is enhanced by the PIN diodes loaded in the upper and lower layer structures, so that broadband absorption is realized; and on the other hand, the input impedance of the absorber is regulated and controlled by virtue of the resistance effect of the PIN diode, so that the absorption is dynamically adjustable.

Description

Technical Field

[0001] The invention relates to the technical field of electromagnetic wave scatterers, and in particular to a broadband electromagnetic wave adjustable metamaterial scatterer with a double-layer three-dimensional structure. Background Art

[0002] In recent years, electromagnetic metamaterials have attracted more and more attention due to their unique electromagnetic response characteristics. Metamaterials are sub-wavelength composite structures whose response characteristics mainly depend on the design of their unit structures, rather than just the properties of the material itself. This design flexibility makes electromagnetic metamaterials very suitable for realizing specific electromagnetic functions. Furthermore, a variety of electromagnetic metamaterial devices have also been designed, such as superlenses, invisibility cloaks, perfect absorbers, etc.

[0003] In the field of metamaterials, metamaterials have attracted a lot of research due to their thin thickness, strong absorption strength, and dynamic controllability. Researchers have integrated electronic technology into the design of electromagnetic metamaterials and adopted the method of embedding active electronic devices in the structure to realize metamaterial absorbers with dynamically controllable electromagnetic responses.

[0004] This controllable metamaterial absorber based on active device loading loads PIN diodes, varactor diodes, etc. in the metamaterial unit structure. By adjusting the external bias voltage, a dynamically adjustable reflection spectrum can be achieved. The dynamically controllable absorber has more flexible characteristics and can expand and select the operating frequency to a certain extent, diversify the electromagnetic wave response characteristics of the material, and provide possibilities for designing new metamaterial devices.

[0005] However, most of the controllable absorbers designed so far still have some problems in actual use. For example, it is difficult to achieve efficient electromagnetic control, the controllable bandwidth is narrow, and the feeding network is complex. Based on the above problems, it is necessary to improve and optimize the structure of metamaterial absorbers. Summary of the invention

[0006] In order to solve the above technical problems, the present invention provides a broadband electromagnetic wave tunable metamaterial scatterer with a double-layer three-dimensional structure, which has the characteristics of efficient electromagnetic control, narrow adjustable bandwidth and feeding network.

[0007] To achieve the above-mentioned purpose, the present invention provides the following technical solutions: a broadband electromagnetic wave adjustable metamaterial scatterer with a double-layer three-dimensional structure, comprising a lower layer component arranged at the bottom for absorbing low frequencies, and an upper layer component actively used for absorbing high frequencies, the lower layer component comprising a horizontally laid substrate, and a plurality of lower layer boards on a vertical substrate, and the plurality of lower layer boards are laid in parallel, a first PIN diode is arranged in the lower layer board, and a first inductor is also arranged on the side surface of the lower layer board, the upper layer component is arranged above the lower layer component, the upper layer component comprises a top plate arranged horizontally above the lower layer board, and a plurality of upper layer boards are vertically connected to the bottom surface of the top plate, and the lower ends of the plurality of upper layer boards are respectively inserted between two lower layer boards and kept parallel, so that the lower layer boards and the upper layer boards are arranged in parallel in an alternating manner;

[0008] A second inductor is also embedded on the surface of the top plate, and a first PIN diode is also disposed on the side surface of the upper plate.

[0009] As a preferred technical solution of a broadband electromagnetic wave tunable metamaterial scatterer with a double-layer three-dimensional structure of the present invention, a plurality of bias lines are laid on the upper surface of the top plate, and the bias lines and the second inductor are on the same straight line.

[0010] Compared with the prior art, the beneficial effects of the present invention are as follows: by setting a broadband adjustable absorber with a double-layer three-dimensional structure, the upper structure is mainly responsible for low-frequency electromagnetic absorption, and the lower structure is mainly responsible for high-frequency electromagnetic tuning absorption; the PIN diodes loaded in the upper and lower structures, on the one hand, enhance the energy loss of the electromagnetic absorber, thereby realizing broadband absorption; on the other hand, the input impedance of the absorber is regulated by means of the resistance effect of the PIN diode, thereby realizing dynamic adjustable absorption; in the technical scheme, by controlling the PIN diode in the structure, the designed broadband adjustable absorber can realize dynamic adjustment of the average reflectivity greater than 10dB in the wide frequency range of 2-12GHz; the adjustable absorber in the technical scheme has comprehensive advantages in broadband, oblique incidence, light weight, simple feeding network, etc., and has a certain driving role in the field of sub-wavelength structure electromagnetic dynamic regulation. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to make the contents of the present invention more clearly understood, the present invention is further described in detail below based on specific embodiments in conjunction with the accompanying drawings.

[0012] Figure 1 It is a schematic diagram of the unit structure in the present invention;

[0013] Figure 2 It is a schematic diagram of the dynamic reflectivity spectrum in the present invention;

[0014] In the figure: 1, substrate; 2, lower plate; 3, first PIN diode; 4, first inductor; 5, upper plate; 6, top plate; 7, bias line; 8, second inductor. DETAILED DESCRIPTION

[0015] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0016] Example

[0017] like Figure 1-2 As shown, a broadband electromagnetic wave adjustable metamaterial scatterer with a double-layer three-dimensional structure disclosed in the present invention includes a lower component arranged below for absorbing low frequencies, and an upper component actively used for absorbing high frequencies, wherein the lower component includes a horizontally laid substrate 1, and a plurality of lower panels 2 vertically on the substrate 1, and the plurality of lower panels 2 are laid in parallel, a first PIN diode 3 is arranged in the lower panel 2, and a first inductor 4 is also arranged on the side surface of the lower panel 2, and the upper component is arranged above the lower component, and the upper component includes a top panel 6 horizontally arranged above the lower panel 2, and a plurality of upper panels 5 are vertically connected to the bottom surface of the top panel 6, and the lower ends of the plurality of upper panels 5 are respectively inserted between two lower panels 2 and kept parallel, so that the lower panels 2 and the upper panels 5 are arranged in an alternating parallel manner; a second inductor 8 is also embedded on the surface of the top panel 6, and a first PIN diode 3 is also arranged on the side surface of the upper panel 5.

[0018] Specifically, a plurality of bias lines 7 are laid on the upper surface of the top plate 6 , and the bias lines 7 and the second inductor 8 are on the same straight line.

[0019] Working principle and use process of the present invention: The adjustable electromagnetic absorber based on the double-layer three-dimensional structure in the present invention is suitable for the S, C and X bands. By adopting the vertical stacking method, the upper structure is mainly responsible for low-frequency absorption, and the lower structure is mainly responsible for high-frequency absorption, thereby realizing the expansion of the absorption band; in this technical solution, by controlling the PIN diodes in the upper and lower structures respectively, the designed broadband adjustable absorber can not only realize the dynamic adjustment of reflectivity, but also realize the dynamic switching of absorption bands. By adjusting the bias voltage of the PIN diode, the adjustable absorber can realize dynamic regulation of the average reflectivity greater than 10dB in the frequency range of 2-12GHz.

[0020] For example, certain words are used in the specification and claims to refer to specific components. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. This specification and claims do not use differences in names as a way to distinguish components, but use differences in the functions of components as the criteria for distinction. For example, "including" mentioned throughout the specification and claims is an open term, so it should be interpreted as "including but not limited to". "Approximately" means that within an acceptable error range, those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0021] It should be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a product or system including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such product or system. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the product or system including the elements.

[0022] The above description shows and describes several preferred embodiments of the present invention, but as mentioned above, it should be understood that the present invention is not limited to the form disclosed herein, and should not be regarded as excluding other embodiments, but can be used in various other combinations, modifications and environments, and can be modified within the scope of the invention concept described herein through the above teachings or the technology or knowledge of the relevant field. Changes and variations made by those skilled in the art do not depart from the spirit and scope of the present invention, and should be within the scope of protection of the claims attached to the present invention.

Claims

1. A broadband electromagnetic wave tunable metamaterial scatterer with a double-layer three-dimensional structure, characterized in that: The invention comprises a lower layer component arranged at the bottom for absorbing low frequencies, and an upper layer component actively used for absorbing high frequencies, wherein the lower layer component comprises a horizontally laid substrate (1), and a plurality of lower layer boards (2) on the substrate (1) vertically, and the plurality of lower layer boards (2) are laid in parallel, a first PIN diode (3) is arranged in the lower layer board (2), and a first inductor (4) is also arranged on the side surface of the lower layer board (2), and the upper layer component is arranged above the lower layer component, and the upper layer component comprises a top plate (6) arranged horizontally above the lower layer board (2), and a plurality of upper layer boards (5) are vertically connected to the bottom surface of the top plate (6), and the lower ends of the plurality of upper layer boards (5) are respectively inserted between two lower layer boards (2) and kept parallel, so that the lower layer boards (2) and the upper layer boards (5) are arranged in a staggered parallel manner; A second inductor (8) is also embedded on the surface of the top plate (6) and a first PIN diode (3) is also provided on the side surface of the upper plate (5).

2. The broadband electromagnetic wave tunable metamaterial scatterer with a double-layer three-dimensional structure according to claim 1, characterized in that: A plurality of bias lines (7) are laid on the upper surface of the top plate (6), and the bias lines (7) and the second inductor (8) are located on the same straight line.

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