Light-emitting assembly and light-emitting device

Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting assembly and a light-emitting device. The light-emitting assembly comprises a substrate, an epitaxial structure, a first reflecting layer and a second reflecting layer. The epitaxial structure is located on the substrate; the second reflecting layer is located between the substrate and the epitaxial structure; the first reflecting layer is located between the second reflecting layer and the epitaxial structure; the projection overlooked in the direction perpendicular to the surface of the substrate is defined as orthographic projection, the light-emitting assembly is overlooked from the upper portion of the light-emitting assembly, and the orthographic projection of the first reflecting layer on the substrate is located in the orthographic projection range of the second reflecting layer on the substrate. Through the matching design of the first reflecting layer and the second reflecting layer, the differentiated regulation and control of the optical radiation density of the middle area and the peripheral area of the epitaxial structure can be realized to obtain higher optical power density, so that the light intensity of the light-emitting component in the middle area of the epitaxial structure is effectively enhanced, and the illumination range of the light-emitting component is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a light-emitting component and a light-emitting device. Background Art

[0002] In the application field of light-emitting devices, such as high-end flashlights, the range is an important indicator to measure the performance of flashlights. At present, vertical thin-film chips with Lambertian light fields have shown good performance in improving the range of flashlights. This chip optimizes the light field distribution, so that the light has a better focusing effect during the irradiation process, thereby improving the range.

[0003] However, in the design process of traditional Lambertian light field vertical thin film chips, the focus is often on pursuing the uniformity of current distribution in the light-emitting area in order to achieve the best internal quantum efficiency. Although this design improves the overall light efficiency to a certain extent, it has certain limitations and is difficult to meet the requirements of light-emitting devices with a longer range. Summary of the invention

[0004] The present invention provides a light-emitting component, which can solve at least one problem in the background technology to effectively improve the light color effect.

[0005] In a first aspect, the present invention provides a light-emitting component, which includes at least a substrate, an epitaxial structure, a first reflective layer, and a second reflective layer; the epitaxial structure is located on the substrate; the second reflective layer is located between the substrate and the epitaxial structure; the first reflective layer is located between the second reflective layer and the epitaxial structure; a projection viewed from above in a direction perpendicular to the surface of the substrate is defined as an orthographic projection, and when the light-emitting component is viewed from above, the orthographic projection of the first reflective layer on the substrate is within the range of the orthographic projection of the second reflective layer on the substrate.

[0006] In a second aspect, the present invention further provides a light-emitting device, which adopts the light-emitting component of the above embodiment.

[0007] Based on the above, the light-emitting component provided in the embodiment of the present invention can achieve differentiated regulation of the light radiation density in the middle area and the peripheral area of ​​the epitaxial structure through the coordinated design of the first reflective layer and the second reflective layer, so as to obtain a higher light power density, thereby effectively enhancing the light intensity of the light-emitting component in the middle area of ​​the epitaxial structure and improving the light irradiation range of the light-emitting component.

[0008] Other features and advantages of the present invention will be set forth in the following description, and in part will be apparent from the description, or may be learned by practicing the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief introduction is given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0010] Figure 1 is a schematic top view of a light emitting component provided in one embodiment of the present invention; Figure 2 yes Figure 1 Schematic cross-sectional view of AA in the figure; Figure 3~Figure 5 It is a top view schematic diagram of a light emitting component provided in other embodiments of the present invention.

[0011] Reference numerals: 10 - substrate; 20 - epitaxial structure; 31 - first reflective layer; 32 - second reflective layer; 40 - wavelength conversion layer; 21 - first semiconductor; 22 - active layer; 23 - second semiconductor layer; 51 - conductive layer; 52 - first insulating layer; 53 - conductive layer; 54 - second insulating layer; 61 - first electrode; 62 - second electrode; 20a - through hole; 20b - via hole. DETAILED DESCRIPTION

[0012] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention; the technical features designed in different implementation modes of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0013] An embodiment of the present invention provides a light-emitting component, which at least includes a substrate, an epitaxial structure, a first reflective layer, and a second reflective layer; the epitaxial structure is located on the substrate; the second reflective layer is located between the substrate and the epitaxial structure; the first reflective layer is located between the second reflective layer and the epitaxial structure; a projection viewed from above in a direction perpendicular to the surface of the substrate is defined as an orthographic projection, and when the light-emitting component is viewed from above, the orthographic projection of the first reflective layer on the substrate is within the range of the orthographic projection of the second reflective layer on the substrate.

[0014] By designing the positional relationship between the first reflective layer and the second reflective layer, it is possible to achieve differentiated regulation of the light radiation density between the middle area and the peripheral area of ​​the epitaxial structure to obtain a higher light power density, thereby effectively enhancing the light intensity of the light-emitting component in the middle area of ​​the epitaxial structure and improving the light irradiation range of the light-emitting component.

[0015] In some embodiments, the orthographic projection area of ​​the first reflective layer on the substrate is smaller than the orthographic projection area of ​​the second reflective layer on the substrate; the ratio of the orthographic projection area of ​​the first reflective layer on the substrate to the orthographic projection area of ​​the second reflective layer on the substrate is between 70% and 90%. By limiting the orthographic projection areas of the first reflective layer and the second reflective layer, it is avoided that the ratio of the orthographic projection areas of the two is too large or too small to achieve the effect of improving the optical power density.

[0016] In some embodiments, the brightness density of the epitaxial structure within the orthographic projection range of the first reflective layer is greater than the brightness density of the epitaxial structure outside the projection range of the first reflective layer. By limiting the brightness density of the two, the middle area is enhanced to obtain a higher light extraction efficiency, thereby improving the light irradiation range of the light-emitting component.

[0017] In some embodiments, the total reflectivity of the first reflective layer and the second reflective layer is greater than the reflectivity of the second reflective layer, so as to enhance the middle region to obtain higher light extraction efficiency.

[0018] In some embodiments, the total reflectivity of the stacked composite of the first reflective layer and the second reflective layer is greater than 90%, and the reflectivity of the second reflective layer is greater than 80%, so as to further ensure good light extraction efficiency of the light-emitting component.

[0019] In some embodiments, the ratio of the top projection width W1 of the first reflective layer to the top projection width W2 of the second reflective layer is between 60% and 80%. By limiting the top projection width, it is possible to avoid the difference between the two being too large, which results in a low overall luminous efficiency of the light-emitting component, and to avoid the difference between the two being too small, which fails to improve the range of the light-emitting component.

[0020] In some embodiments, the first reflective layer is a DBR stacked structure, and the second reflective layer is a single-layer mirror structure. The DBR stacked structure can selectively reflect wavelengths, effectively improve reflectivity and improve beam quality.

[0021] In some embodiments, when looking down at the light-emitting component from above, the outer edge projection contour of the first reflective layer on the substrate is an axially symmetrical figure or a centrally symmetrical figure, and / or the outer edge projection contour of the second reflective layer on the substrate is an axially symmetrical figure or a centrally symmetrical figure.

[0022] In some embodiments, when looking down at the light emitting assembly from above, the projection of the first reflective layer is a circle or a regular polygon, and / or the projection of the second reflective layer is a circle or a polygon. The contour structure of the body can be designed according to actual needs, and this embodiment is not limited thereto.

[0023] In some embodiments, the light-emitting component further includes a wavelength conversion layer, and the wavelength conversion layer at least covers a portion of the upper surface of the epitaxial structure to achieve wavelength conversion of the light-emitting component and optimize conversion efficiency.

[0024] In some embodiments, the material of the wavelength conversion layer is a fluorescent material.

[0025] In some embodiments, the epitaxial structure further includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on the first reflective layer and the second reflective layer.

[0026] In some embodiments, the light-emitting component also includes a conductive layer, a first insulating layer and a conductive layer located between the epitaxial structure and the substrate; the conductive layer is electrically connected to the first semiconductor layer, the conductive layer is electrically connected to the second semiconductor layer, and the first insulating layer electrically isolates the conductive layer and the conductive layer.

[0027] In some embodiments, the light-emitting component also includes a first electrode and a second electrode; the first electrode is formed above a substrate not covered with an epitaxial structure and is electrically connected to the conductive layer; the second electrode is formed on a surface of the substrate away from the epitaxial structure and is electrically connected to the conductive layer.

[0028] In some embodiments, the epitaxial structure is formed with at least one through hole, and the through hole sequentially penetrates the second reflective layer, the first reflective layer, the first semiconductor layer, and the active layer from the second reflective layer toward the epitaxial structure on the side away from the substrate and exposes the second semiconductor layer; The epitaxial structure is formed with at least one through hole, and the through hole sequentially penetrates the second reflective layer, the first reflective layer to the second semiconductor layer from the second reflective layer to the epitaxial structure direction away from the substrate side and exposes a part of the first semiconductor layer, or penetrates the second reflective layer to expose a part of the first semiconductor layer; the conductive layer covers the surface of the epitaxial structure close to the substrate side to contact the through hole and extends to cover the substrate outside the epitaxial structure; the first insulating layer covers the surface of the conductive layer close to the substrate side and at least extends to cover part of the side wall of the through hole; the conductive layer is located between the substrate and the first insulating layer and fills the through hole to electrically connect the second semiconductor layer. Through the above arrangement, the current can be effectively flowed in and out of the light-emitting component to achieve the purpose of light emission.

[0029] The present invention further provides a light-emitting device, which adopts the light-emitting component of any of the above embodiments to improve the light power density and achieve the technical effect of a longer range of the light-emitting device.

[0030] In some embodiments, the thickness of the epitaxial structure is between 2 and 8 microns, and the light-emitting device is constructed so that at least 70% of the light intensity is emitted from a surface of the epitaxial structure away from the substrate, so as to improve light efficiency and range capability.

[0031] Next, the technical solution of the present invention is described and illustrated in detail through a variety of specific implementation methods in combination with different embodiments and the accompanying drawings.

[0032] Embodiment 1 See also Figure 1 to Figure 3 , Figure 1 is a schematic top view of a light emitting component provided in Embodiment 1 of the present invention, Figure 2 To achieve at least one of the advantages or other advantages, this embodiment 1 discloses a light emitting component including at least a substrate 10 , an epitaxial structure 20 , a first reflective layer 31 , and a second reflective layer 32 .

[0033] In this embodiment, the epitaxial structure 20 is located on the substrate 10. As an example, the substrate 10 is set as an insulating substrate or a conductive substrate according to the electrical connection relationship between the actual light-emitting component and the epitaxial structure 20, and this embodiment is not limited thereto. Among them, the material and design of the substrate 10 can be reasonably designed according to actual needs and are not limited here.

[0034] When traditional vertical thin-film chips with Lambertian light fields are used as light-emitting components, they generally only consider the uniform current distribution in the light-emitting area to pursue the best internal quantum efficiency. However, this design cannot meet the requirements of longer range.

[0035] Based on the above problems, the present embodiment improves the first reflective layer 31 and the second reflective layer 32. Specifically, the light-emitting component includes a second reflective layer 32 and a first reflective layer 31 stacked on the substrate 10 in sequence. The vertical projection along the direction perpendicular to the surface of the substrate 10 is defined as the orthographic projection. When the light-emitting component is viewed from above, the orthographic projection of the first reflective layer 31 on the substrate 10 is located within the orthographic projection range of the second reflective layer 32 on the substrate 10. That is, the region of the epitaxial structure 20 projected on the substrate 10 and located within the range of the first reflective layer 31 can be defined as the middle region, and the region of the epitaxial structure 20 projected on the substrate 10 outside the range of the first reflective layer 31 and located within the range of the second reflective layer 32 can be defined as the peripheral region. By utilizing the projection relationship between the first reflective layer 31 and the second reflective layer 32, the luminous intensity of the middle region on the epitaxial structure 20 can be made greater than the luminous intensity of the peripheral region, thereby realizing the differential regulation of the light radiation density of different regions of the light-emitting component, so as to obtain a higher light power density, thereby effectively improving the light irradiation range of the light-emitting component and meeting the demand for a longer range.

[0036] It should be noted that the orthographic projection of the outer contour of the second reflective layer 32 on the substrate 10 falls within the orthographic projection range of the epitaxial structure 20 on the substrate 10 or falls within the orthographic projection range of the epitaxial structure 20 on the substrate 10. Figure 2 The outer contour projection of the second reflective layer 32 on the substrate 10 falls on the projection range of the epitaxial structure 20 on the substrate 10, and the two projections overlap. However, this embodiment is not limited to this. Therefore, the epitaxial structure 20 area projected on the substrate 10 may include only the middle area and the peripheral area, and also include other areas that are neither within the orthographic projection range of the first reflective layer 31 nor within the orthographic projection range of the second reflective layer 32.

[0037] Preferably, the total reflectivity of the stacked composite of the first reflective layer 31 and the second reflective layer 32 is greater than the reflectivity of the second reflective layer 32. This design can further ensure that the luminous intensity in the middle area of ​​the epitaxial structure 20 is greater than the luminous intensity in the peripheral area of ​​the epitaxial structure 20, thereby improving the light irradiation range of the light-emitting component. As an example, the total reflectivity of the stacked composite of the first reflective layer 31 and the second reflective layer 32 is greater than or equal to 90%, and the reflectivity of the second reflective layer 32 is greater than or equal to 80%.

[0038] Among them, the materials of the first reflective layer 31 and the second reflective layer 32 are materials that can reflect light, for example, they can be dielectric films, metal films, etc. In this embodiment, the first reflective layer 31 is preferably a DBR stacked structure, and more preferably an Ag mirror DBR stacked structure. The Ag mirror DBR stacked structure includes silver layers and dielectric layers stacked alternately. The Ag mirror is used as a high refractive index layer to provide a high reflective layer. The dielectric layer is usually a low refractive index material, such as silicon oxide (SiO2), aluminum nitride (AlN) and silicon nitride (SiN). By adopting a DBR stacked structure, the wavelength can be selectively reflected, greatly improving the reflectivity and improving the beam quality. In this embodiment, the second reflective layer 32 is preferably a single-layer mirror structure, such as a single-layer Ag mirror structure, to provide high reflectivity. In this embodiment, the first reflective layer 31 is designed as an Ag mirror DBR stacked structure, which can ensure that the middle area of ​​the epitaxial structure 20 has a reflectivity close to 100%, and has strong wavelength selectivity, which can greatly improve the luminous intensity of the middle area of ​​the epitaxial structure 20. The second reflective layer 32 is designed as a single-layer Ag mirror structure to ensure a better reflection effect. At the same time, its reflectivity is relatively lower than the total reflectivity of the first reflective layer 31 and the second reflective layer 32 stacked together, so that the luminous intensity of the peripheral area of ​​the epitaxial structure 20 is lower than the luminous intensity of the middle area, thereby improving the light irradiation range of the light-emitting component.

[0039] Preferably, the orthographic projection area of ​​the first reflective layer 31 on the substrate 10 is smaller than the orthographic projection area of ​​the second reflective layer 32 on the substrate 10. The ratio of the orthographic projection area of ​​the first reflective layer 31 on the substrate 10 to the orthographic projection area of ​​the second reflective layer 32 on the substrate 10 is between 70% and 90%. By limiting the orthographic projection areas of the first reflective layer 31 and the second reflective layer 32 as described above, a better light range effect can be achieved while ensuring appropriate luminous efficiency, and the overall luminous efficiency and the luminous efficiency of the middle area can be balanced.

[0040] In some embodiments, the brightness density of the epitaxial structure 20 located within the orthographic projection range of the first reflective layer 31 is greater than the brightness density of the epitaxial structure 20 located outside the projection range of the first reflective layer 31. As an example, the ratio of the brightness density of the epitaxial structure 20 located within the orthographic projection range of the first reflective layer 31 to the brightness density of the epitaxial structure 20 located outside the projection range of the first reflective layer 31 is set to be greater than 1 and less than or equal to 1.5. For example, the ratio may be 1.1, 1.2, 1.3, 1.4, 1.5, etc. By limiting the brightness density as described above, it is effectively avoided that the difference between the ratios of the two is large, resulting in a low total luminous efficiency of the entire light-emitting component.

[0041] Preferably, the current density of the epitaxial structure 20 within the orthographic projection range of the first reflective layer 31 is greater than the current density of the epitaxial structure 20 outside the projection range of the first reflective layer 31. Specifically, this embodiment can also utilize the difference in current density between the two to increase the range of the light emitting component.

[0042] See also Figure 1 , Figure 3 , the ratio of the top projection width W1 of the first reflective layer 31 to the top projection width W2 of the second reflective layer 32 is between 60% and 80%. Similarly, by limiting the top projection widths of the first reflective layer 31 and the second reflective layer 32, it is possible to avoid a too large difference between the two that results in a low overall luminous efficiency of the light-emitting component, and to avoid a too small difference between the two that fails to improve the range of the light-emitting component.

[0043] Further, when looking down at the light emitting assembly from above, the outer edge projection contour of the first reflective layer 31 on the substrate 10 is an axisymmetric figure or a centrally symmetrical figure, and / or the outer edge projection contour of the second reflective layer 32 on the substrate 10 is an axisymmetric figure or a centrally symmetrical figure. Axially symmetrical figures or centrally symmetrical figures include but are not limited to circles, ellipses, squares, rectangles, equilateral triangles, rhombuses, regular polygons, etc. In this embodiment, please refer to Figure 2 , Figure 4, when looking down at the light emitting assembly from above, the projection of the first reflective layer 31 is preferably a circle or a regular polygon, and / or the projection of the second reflective layer 32 is preferably a circle or a polygon. It should be noted that the shapes of the first reflective layer 31 and the second reflective layer 32 can be reasonably designed according to actual needs, and the present embodiment is not limited thereto.

[0044] Optional, see Figure 3 The light-emitting component also includes a wavelength conversion layer 40, which covers at least part of the upper surface of the epitaxial structure 20. Preferably, the material of the wavelength conversion layer 40 is a fluorescent material. It should be noted that the specific material of the wavelength conversion layer 40 can be reasonably selected and adjusted according to the requirements of the actual light-emitting component for the wavelength range, and is not limited here. In addition, the wavelength conversion layer 40 cooperates with the DBR stacking structure of the first reflective layer 31, and the DBR stacking structure can reflect the reflected light of the wavelength conversion layer 40, thereby enhancing the reflectivity, reducing light loss, and helping to optimize the conversion efficiency and improve the photoelectric effect of the device.

[0045] In summary, this embodiment can achieve differentiated regulation of light radiation density between the middle area and the peripheral area through the design of the first reflective layer 31 and the second reflective layer 32, so as to obtain a higher light power density and improve the light irradiation range of the light-emitting component.

[0046] Embodiment 2 Based on the first embodiment, in the light emitting component of the second embodiment, please refer to Figure 2 The epitaxial structure 20 further includes a first semiconductor layer 21, an active layer 22, and a second semiconductor layer 23 which are sequentially stacked on the first reflective layer 31 and the second reflective layer 32. Preferably, the thickness of the epitaxial structure 20 is between 2 and 8 microns.

[0047] Among them, the first semiconductor layer 21 and the second semiconductor layer 23 have different conductivity types, and different conductivity types can be achieved by n-type doping or p-type doping, respectively. For example, the first semiconductor layer 21 is an n-type semiconductor layer, the second semiconductor layer 23 is a p-type semiconductor layer, or the first semiconductor layer 21 is a p-type semiconductor layer, and the second semiconductor layer 23 is an n-type semiconductor layer. The n-type semiconductor layer can be doped with an n-type dopant such as Si, Ge or Sn. The p-type semiconductor layer can be doped with a p-type dopant such as Mg, Zn, Ca, Sr or Ba. The first semiconductor layer 21 or the second semiconductor layer 23 can be set to different single layers or multiple layers according to different doping concentrations or component contents.

[0048] The active layer 22 is disposed between the first semiconductor layer 21 and the second semiconductor layer 23, and is a region for providing light radiation for electron and hole recombination. Different materials can be selected according to different luminescent wavelengths. The active layer 22 can be a periodic structure of a single quantum well or a multi-quantum well. The active layer 22 can provide conventional radiation such as ultraviolet, blue, green, yellow, red, infrared, etc. In this embodiment, it is preferred that the active layer 22 can provide blue light radiation.

[0049] It should be noted that, depending on the actual needs of the light-emitting component, the epitaxial structure 20 may also be provided with at least one of the functional layers (not shown in the figure) such as a hole injection layer, an electron injection layer, a stress transition layer, an electron blocking layer, a current spreading layer, a current blocking layer, and an ohmic contact material, and no limitation is made here.

[0050] In some embodiments, the light emitting component further includes a conductive layer 51, a first insulating layer 52, and a conductive layer 53 located between the epitaxial structure 20 and the substrate 10; the conductive layer 51 is electrically connected to the first semiconductor layer 21, the conductive layer 53 is electrically connected to the second semiconductor layer 23, and the first insulating layer 52 electrically isolates the conductive layer 51 from the conductive layer 53. The electrical connection between the conductive layer 51 and the conductive layer 53 can effectively realize the flow of current into and out of the epitaxial structure 20, thereby achieving the purpose of light emission.

[0051] As an example, the material of the conductive layer 51 and the conductive layer 53 is a metal conductive material, for example, at least one of Cr, Al, Pt, Ti, Au, and Ni, to improve compactness and conductivity.

[0052] Please continue reading Figure 2 In one embodiment, the conductive layer 51 and the conducting layer 53 are both located on the side of the epitaxial structure 20 close to the substrate 10 to avoid blocking the light from the active area, thereby effectively improving the brightness of the light-emitting component. The conductive layer 53 and the transmission layer can be electrically isolated by the first insulating layer 52 to avoid short circuit between the two.

[0053] Further, the epitaxial structure 20 is formed with at least one through hole 20a, and the through hole 20a sequentially penetrates the second reflective layer 32, the first reflective layer 31, the first semiconductor layer 21, and the active layer 22 from the second reflective layer 32 to the epitaxial structure 20 on the side away from the substrate 10, and exposes a partial area of ​​the second semiconductor layer 23. The epitaxial structure 20 is also formed with at least one through hole 20b, and the through hole 20b sequentially penetrates the second reflective layer 32, the first reflective layer 31 to the second semiconductor layer 23 from the second reflective layer 32 to the epitaxial structure 20 on the side away from the substrate 10, and exposes a partial area of ​​the first semiconductor layer 21, or penetrates the second reflective layer 32 to expose a partial area of ​​the first semiconductor layer 21.

[0054] The through hole 20a is mainly used to electrically connect the second semiconductor layer 23 and the conductive layer 53, and is mainly located within the orthographic projection range of the first reflective layer 31. The through hole 20b is not only used to electrically connect the first semiconductor layer 21 and the conductive layer 51, but also facilitates current injection to form a more effective current channel, and is mainly located within the orthographic projection range of the second reflective layer 32. That is, the through hole 20b can be formed not only within the orthographic projection range of the first reflective layer 31, but also within the orthographic projection range of the second reflective layer 32. Figure 1 It can also be formed in a region within the orthographic projection range of the second reflective layer 32 and outside the orthographic projection range of the first reflective layer 31, for example Figure 5 shown.

[0055] In addition, the through hole 20a and the via hole 20b can be one or a plurality of holes evenly spaced. Figure 1 In the example, there is one through hole 20a and 16 via holes 20b; Figure 5 In the figure, there are 7 through holes 20a and 20 vias 20b. The design is made according to actual needs, and the present embodiment is not limited thereto. The multiple through holes 20a and vias 20b evenly spaced can ensure the uniformity of the electric field distribution in the epitaxial structure 20, thereby improving the brightness uniformity of the light-emitting component. Preferably, the projections of the through holes 20a and the vias 20b on the substrate 10 are circular. Of course, other shapes can also be designed, such as elliptical, square, etc. In addition, the side walls of the through holes 20a and the vias 20b can be vertically or inclined, and the present embodiment is not limited thereto.

[0056] Preferably, when the projections of the through hole 20a and the via hole 20b on the substrate 10 are circular, the diameter of the through hole 20a is larger than the diameter of the via hole 20b. That is, the projection area of ​​a single through hole 20a on the substrate 10 is larger than the projection area of ​​a single via hole 20b on the substrate 10.

[0057] In order to form a better electrical connection between the second semiconductor layer 23 and the conductive layer 53, the through hole 20a partially penetrates the second semiconductor layer 23, so that the conductive layer 53 extends into the second semiconductor layer 23. Of course, in other embodiments, the through hole 20a can also extend to the interface between the second semiconductor layer 23 and the active layer 22.

[0058] The conductive layer 51 covers the surface of the epitaxial structure 20 close to the substrate 10 to contact the through hole 20b and extends to cover the substrate 10 outside the epitaxial structure 20, so that the conductive layer 51 is electrically connected to the first semiconductor layer 21 through the contact hole. The first insulating layer 52 covers the surface of the conductive layer 51 close to the substrate 10 and at least extends to cover a portion of the sidewall of the through hole 20a. The conductive layer 53 is located between the substrate 10 and the first insulating layer 52 and fills the through hole 20a, so that the conductive layer 53 is electrically connected to the second semiconductor layer 23 through the through hole 20a.

[0059] The conductive layer 51 may only cover the surface of the epitaxial structure 20 close to the substrate 10, for example Figure 5 The conductive layer 51 may also cover the surface of the epitaxial structure 20 close to the substrate 10 and extend toward the side wall of the through hole 20a located at the first semiconductor layer 21, for example Figure 2 The design of extending the conductive layer 51 to cover the side wall of the through hole 20a can help the current to form a path on the conductive layer 51 on the side wall of the through hole 20a, increase the contact area between the conductive layer 51 and the first semiconductor layer 21, and thus help the current to flow near the through hole 20a, thereby improving the light uniformity and light effect.

[0060] The design of the first insulating layer 52 can electrically insulate the conductive layer 51 from the conductive layer 53 to avoid short circuit. As an example, the first insulating layer 52 can be a single-layer structure, whose refractive index is lower than that of the epitaxial structure 20, and can reflect light, such as a silicon oxide layer or a silicon nitride layer; or the first insulating layer 52 can be a multi-layer structure, such as a multi-layer structure formed by stacking materials such as silicon oxide (SiO2), aluminum nitride (AlN) and silicon nitride (SiN), and the first insulating layer 52 forms a reflective structure layer to reflect the light radiated by the active layer 22, thereby improving the light extraction efficiency of the light-emitting element.

[0061] By arranging the conductive layer 51 and the conducting layer 53 on the side of the epitaxial structure 20 close to the substrate 10 , it is avoided that the light extraction efficiency is reduced due to the light absorption effect of the electrodes caused by being designed on the side of the epitaxial structure 20 far from the substrate 10 .

[0062] Furthermore, the light emitting component further includes a first electrode 61 and a second electrode 62. The first electrode 61 is formed on the substrate 10 not covered with the epitaxial structure 20 and is electrically connected to the conductive layer 51; the second electrode 62 is formed on the surface of the substrate 10 away from the epitaxial structure 20 and is electrically connected to the conductive layer 53. One or more first electrodes 61 are uniformly arranged on the substrate 10.

[0063] As an example, the first electrode 61 and the second electrode 62 are made of a metal material to provide electrical connection, such as at least one of nickel, gold, chromium, titanium, platinum, palladium, rhodium, iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten and molybdenum, or at least one of alloys or laminates selected from the above materials.

[0064] In order to effectively improve the space utilization of the light emitting component, the present embodiment designs the position of the first electrode 61. Figure 1 or Figure 2 , looking down at the substrate 10 from above the light-emitting component, the surface of the substrate 10 includes a non-light-emitting area that is not covered with the epitaxial structure 20. The conductive layer 51, the conductive layer 53 and the first insulating layer 52 extend horizontally from the epitaxial structure 20 to above the non-light-emitting area, and the first electrode 61 is arranged on the conductive layer 51 located above the non-light-emitting area. Through the above arrangement, on the one hand, the horizontally extending conductive layer 51, the conductive layer 53 and the first insulating layer 52 can be used as the supporting structure of the electrode, thereby improving the mechanical strength of the light-emitting component and making it more stable during welding and use; on the other hand, the structure is more compact, which can effectively improve the space utilization rate.

[0065] In other embodiments, see Figure 2 The light-emitting component further includes a second insulating layer 54, which covers the conductive layer 51 in the non-light-emitting area to isolate external water vapor and impurities and prevent current leakage. The second insulating layer 54 is provided with a through hole, and the first electrode 61 is formed in the through hole and is in electrical contact with the conductive layer 51. Of course, the second insulating layer 54 can also extend to cover at least part of the side wall of the epitaxial structure 20, and the present embodiment is not limited thereto.

[0066] Embodiment 3 The present invention further provides a light-emitting device, which uses the light-emitting component described in any of the above embodiments to effectively improve the photoelectric performance of the light-emitting device and optimize the range capability of the light-emitting device.

[0067] Furthermore, the light-emitting device is constructed so that at least 70% of the light-emitting intensity is emitted from a side surface of the epitaxial structure 20 away from the substrate 10, so that the main light source is emitted from the upper surface of the epitaxial structure 20 away from the substrate 10, thereby facilitating improving the lighting efficiency, ensuring that the light can be more effectively guided to the area that needs illumination, and further ensuring the range capability of the light-emitting device.

[0068] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting component, characterized in that: The light emitting component comprises: substrate; an epitaxial structure, located on the substrate; A second reflective layer, located between the substrate and the epitaxial structure; a first reflective layer, located between the second reflective layer and the epitaxial structure; A vertical projection along a direction perpendicular to the substrate surface is defined as an orthographic projection. When looking down at the light-emitting component from above, the orthographic projection of the first reflective layer on the substrate is within the range of the orthographic projection of the second reflective layer on the substrate.

2. The light emitting assembly according to claim 1, characterized in that: The orthographic projection area of ​​the first reflective layer on the substrate is smaller than the orthographic projection area of ​​the second reflective layer on the substrate; the orthographic projection area of ​​the first reflective layer on the substrate is not less than 50% of the orthographic projection area of ​​the second reflective layer on the substrate.

3. The light emitting assembly according to claim 1, characterized in that: A ratio of an orthographic projection area of ​​the first reflective layer on the substrate to an orthographic projection area of ​​the second reflective layer on the substrate is between 70% and 90%.

4. The light emitting assembly according to claim 1, characterized in that: The brightness density of the epitaxial structure located within the orthographic projection range of the first reflective layer is greater than the brightness density of the epitaxial structure located outside the projection range of the first reflective layer.

5. The light emitting assembly according to claim 1, characterized in that: The total reflectivity of the first reflective layer and the second reflective layer stacked together is greater than the reflectivity of the second reflective layer.

6. The light emitting assembly according to claim 1, characterized in that: The total reflectivity of the first reflective layer and the second reflective layer stacked together is greater than 90%, and the reflectivity of the second reflective layer is greater than 80%.

7. The light emitting assembly according to claim 1, characterized in that: A ratio of a top-view projection width W1 of the first reflective layer to a top-view projection width W2 of the second reflective layer is between 60% and 80%.

8. The light emitting assembly according to claim 1, characterized in that: The first reflective layer is a DBR stacked structure, and the second reflective layer is a single-layer mirror structure.

9. The light emitting assembly according to claim 1, characterized in that: Looking down at the light-emitting component from above, the outer edge projection contour of the first reflective layer on the substrate is an axially symmetrical figure or a centrally symmetrical figure, and / or the outer edge projection contour of the second reflective layer on the substrate is an axially symmetrical figure or a centrally symmetrical figure.

10. The light emitting assembly according to claim 1, characterized in that: The light emitting component further includes a wavelength conversion layer, and the wavelength conversion layer at least covers a portion of the upper surface of the epitaxial structure.

11. The light emitting assembly according to claim 10, characterized in that: The wavelength conversion layer is a film-like structure or a sheet-like structure.

12. The light emitting assembly according to claim 10, characterized in that: The thickness L of the wavelength conversion layer is between 30 and 150 micrometers.

13. The light emitting assembly according to any one of claims 1 to 12, characterized in that: The epitaxial structure further includes a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked on the first reflective layer and the second reflective layer; the light-emitting component further includes a conductive layer, a first insulating layer, and a conductive layer located between the epitaxial structure and the substrate; The first insulating layer is located between the electrically isolated conductive layer and the conductive layer; the conductive layer is in electrical contact with the first semiconductor layer, and the conductive layer is in electrical contact with the second semiconductor layer.

14. The light emitting assembly according to claim 13, characterized in that: The light-emitting component also includes a first electrode and a second electrode; the first electrode is formed above the substrate not covered with the epitaxial structure and is in electrical contact with the conductive layer; the second electrode is formed on the surface of the substrate away from the epitaxial structure and is in electrical contact with the conductive layer.

15. The light emitting assembly according to claim 13, characterized in that: The epitaxial structure is formed with at least one through hole, and the through hole sequentially penetrates the second reflective layer, the first reflective layer, the first semiconductor layer, the active layer to the second semiconductor layer from the second reflective layer to the epitaxial structure on the side away from the substrate and exposes a partial area of ​​the second semiconductor layer; The epitaxial structure is formed with at least one conducting hole, and the conducting hole sequentially penetrates the second reflecting layer, the first reflecting layer, and the second semiconductor layer from the second reflecting layer to the epitaxial structure on the side away from the substrate and exposes a part of the first semiconductor layer, or penetrates the second reflecting layer to expose a part of the first semiconductor layer; The conductive layer covers the surface of the epitaxial structure close to the substrate and electrically contacts the second semiconductor layer through the conductive hole; The first insulating layer covers the surface of the conductive layer close to the substrate and at least extends to cover the sidewall of the through hole; the conductive layer is located between the substrate and the first insulating layer and fills the through hole to electrically contact the second semiconductor layer.

16. A light emitting device, characterized in that: A light-emitting component as described in any one of claims 1 to 15 is used.

17. The light emitting device according to claim 16, characterized in that: The thickness of the epitaxial structure is between 2 and 8 micrometers, and the light-emitting device is constructed so that at least 70% of the light emission intensity is emitted from a surface of the epitaxial structure away from the substrate.

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