A tungsten oxide thin film electrode material, its preparation method and its application

By preparing tungsten oxide thin film electrode materials, the complexity and recycling challenges of tungsten oxide materials in photoelectrocatalytic degradation of organic pollutants were solved, achieving efficient and stable photoelectrocatalytic performance, suitable for the treatment of organic pollutants in high saline environments.

CN119701929BActive Publication Date: 2025-10-28EAST CHINA UNIV OF SCI & TECH
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Patent Information

Application Number
CN202411907465.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2024-12-24
Publication Date
2025-10-28
Estimated Expiration
2044-12-24

AI Technical Summary

Technical Problem

Existing tungsten oxide materials suffer from complex photocatalytic degradation performance and difficulty in recycling when used for photoelectrocatalytic degradation of organic pollutants.

Method used

Using tungsten oxide thin film electrode material, tungsten oxide is combined with a conductive substrate and prepared by a simple drop-coating and calcination method. The resulting tungsten oxide thin film electrode has a small band gap and a more negative valence band potential, which enhances its light absorption performance and photogenerated hole oxidation ability.

Benefits of technology

It achieves highly efficient photoelectrocatalytic degradation of organic pollutants, exhibits good cycle stability and high catalytic degradation performance, and is suitable for the treatment of organic pollutants in high saline environments.

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Abstract

This invention belongs to the field of functional thin film material preparation, specifically relating to a tungsten oxide thin film electrode material, its preparation method, and its application. The invention involves drop-coating a tungsten oxide precursor solution onto an FTO conductive glass substrate, followed by drying and calcination to prepare a tungsten oxide thin film electrode material consisting of the substrate and a tungsten oxide thin film covering the substrate. This material exhibits excellent light absorption performance and strong oxidation capacity. It demonstrates strong cycle stability and high oxidation capacity in advanced oxidative catalytic degradation of organic pollutants. Furthermore, it exhibits higher catalytic degradation activity when sodium chloride is used as the electrolyte. The preparation process of this material is simple and easy to implement, and it has high application prospects in the field of pollutant degradation.
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Description

Technical Field

[0001] This invention belongs to the field of functional thin film material preparation, specifically relating to a tungsten oxide thin film electrode material and its preparation method, and also relating to the application of the thin film electrode material in photoelectrocatalytic degradation of organic pollutants. Background Technology

[0002] With the continuous development of human society, various recalcitrant organic pollutants, such as antibiotics, surfactants, dyes, and organic pesticides, are accumulating in the environment and harming animals and humans. Therefore, finding efficient and practical methods for treating organic pollutants has become an important research topic in the environmental field.

[0003] Adsorption and advanced oxidation methods are common treatment technologies. Most wastewater treatment plants employ advanced oxidation processes such as Fenton oxidation and ozone oxidation. However, these traditional processes suffer from significant drawbacks, including low H2O2 or ozone utilization, increased treatment costs, and secondary pollution. Photoelectrocatalysis, based on the coupling of photocatalysis and electrocatalysis, reduces the recombination rate of photoelectron-hole pairs by driving photogenerated electrons to the cathode via an external circuit, thereby generating more reactive oxygen species. This effectively removes organic pollutants and offers advantages over traditional pollutant treatment technologies, including environmental friendliness, non-toxicity, ease of operation, low cost, and high degradation efficiency, making it one of the most promising technologies for removing organic pollutants.

[0004] Tungsten oxide is a commonly used semiconductor material in photocatalysis. It possesses a narrow bandgap and a suitable band gap structure, enabling the generation of abundant reactive oxygen species. It shows great potential in the photoelectrocatalytic degradation of organic pollutants. Using tungsten oxide for photoelectrocatalytic pollutant degradation can fully utilize its low valence band potential, generating more reactive oxygen species to degrade pollutants. Tungsten oxide is easy to synthesize and does not produce secondary pollution, making it a green and environmentally friendly catalyst. It holds promise as an ideal material for the photoelectrocatalytic removal of antibiotics and has significant theoretical and practical value in environmental remediation.

[0005] Existing technologies, such as patent application number 202111519808.7, disclose a method for treating antibiotic wastewater using a carbon nitride / tungsten trioxide / zinc sulfide dual Z-type composite photocatalyst. This method employs the carbon nitride / tungsten trioxide / zinc sulfide dual Z-type composite photocatalyst for oscillating adsorption and photocatalytic degradation of antibiotic wastewater, achieving effective removal of antibiotics from the wastewater. Another example is patent application number 201811446965.8, which discloses a visible light-driven inverse opal photocatalytic material, its preparation method, and its degradation and removal of organic pollutants in water. This method solves the problem that the conduction band energy levels of tungsten trioxide and bismuth tungstate are too positive, preventing the generation of sufficient reducing electrons. This improves the material's light absorption capacity, accelerates electron-hole separation efficiency, and effectively degrades pollutants.

[0006] Existing technologies often employ composite materials made by combining tungsten oxide with other photocatalytic materials to improve its photocatalytic degradation performance. However, the preparation process is complex, and the materials are difficult to recycle during use. Summary of the Invention

[0007] To address the problems existing in the application of tungsten oxide materials, the present invention aims to provide tungsten oxide thin film electrode materials and their preparation methods, and to provide the application of this material in photoelectrocatalytic degradation of organic pollutants. The tungsten oxide thin film electrode material prepared by the present invention has a smaller band gap and a more negative valence band potential, exhibiting better light absorption performance. Its photogenerated holes have stronger oxidation capabilities, improving the removal efficiency of organic pollutants through photoelectrocatalysis, and also exhibiting good cycle stability.

[0008] Based on the above objectives, the technical solution adopted by the present invention is as follows:

[0009] In a first aspect, the present invention provides a tungsten oxide thin film electrode material, which is composed of a substrate and a tungsten oxide thin film covering the substrate; wherein the substrate is FTO conductive glass; and the thickness of the tungsten oxide thin film is 110-120 μm.

[0010] Preferably, the oxide thin film electrode material is an n-type semiconductor, and the band gap of the oxide thin film electrode material is 2.54 to 2.62 eV, and the valence band position is 2.50 to 2.62 V.

[0011] This invention is the first to combine tungsten oxide with a conductive substrate to prepare a tungsten oxide thin film electrode material. The prepared tungsten oxide thin film electrode material has superior light absorption performance and strong oxidation ability. It has a highly efficient photoelectrocatalytic degradation ability for norfloxacin (NOR). At the same time, the prepared tungsten oxide thin film electrode material is stable and can be used for a long time. It also has better degradation performance when sodium chloride is used as an electrolyte. It has important application value and application prospects in the degradation of organic pollutants.

[0012] Secondly, the present invention provides a method for preparing the above-mentioned tungsten oxide thin film electrode material, comprising the following steps:

[0013] S1: Dissolve ammonium metatungstate in a solvent, then add citric acid aqueous solution and Triton X-100 to it, and stir well to obtain the precursor solution;

[0014] S2: The precursor solution is drop-coated onto the confined area of ​​FTO conductive glass, dried at room temperature, and then calcined to obtain tungsten oxide thin film electrode material.

[0015] The preparation of tungsten oxide thin film electrode material by this invention is very simple and does not require complex synthesis methods such as electrodeposition and hydrothermal treatment. This invention uses an ammonium metatungstate precursor solution to be drop-coated onto FTO conductive glass, followed by drying and calcination to prepare tungsten oxide thin film electrode material. The obtained electrode material has a smaller band gap and a more negative valence band potential, exhibiting better light absorption performance. Its photogenerated holes have stronger oxidation ability and strong catalytic degradation performance for organic pollutants.

[0016] Preferably, the ratio of ammonium metatungstate to citric acid aqueous solution in the precursor solution is 0.2g:0.12mL; and the concentration of the citric acid aqueous solution is 0.1-5M.

[0017] Adding citric acid can give tungsten oxide a better morphology. When the amount of citric acid aqueous solution relative to ammonium metatungstate in the reaction system is within the above range, the prepared product has better photoelectric conversion performance.

[0018] Preferably, the ratio of ammonium metatungstate to Triton X-100 in the precursor solution is 0.2 g: 10 μL.

[0019] The addition of Triton X-100 to the reaction system aims to enhance the hydrophilicity and film-forming properties of the precursor solution on the FTO glass substrate. When the amount of Triton X-100 in the reaction system is 10 μL: 0.2 g relative to the amount of ammonium metatungstate, the prepared product exhibits better stability.

[0020] Preferably, the solvent is an aqueous ethanol solution, wherein the volume fraction of ethanol in the aqueous ethanol solution is 37.5%.

[0021] Preferably, the amount of the precursor solution in the confined region of the FTO conductive glass in step S2 is 50 μL.

[0022] Preferably, the calcination parameters in step S2 are as follows: heating to 550°C at a heating rate of 1°C / min and calcining for 2 hours.

[0023] Thirdly, the present invention provides the application of the above-mentioned tungsten oxide thin film electrode material in the degradation of organic pollutants in high saline environments.

[0024] Preferably, the saline concentration in the high saline environment is 0.05–1 M; the organic pollutant includes norfloxacin.

[0025] Compared with the prior art, the beneficial effects of the present invention are as follows:

[0026] This invention is the first to combine tungsten oxide with a conductive substrate to prepare a tungsten oxide thin film electrode material. The prepared tungsten oxide thin film electrode material has excellent light absorption performance and strong oxidation ability. It has the advantages of strong cycle stability and strong oxidation ability in advanced oxidation catalytic degradation of organic pollutants. At the same time, it has higher catalytic degradation activity when sodium chloride is used as electrolyte, and has high application prospects in the field of pollutant degradation.

[0027] The tungsten oxide thin-film electrode material of this invention has a simple and easy preparation process. By preparing tungsten oxide into a thin-film electrode, the problem of the difficulty in recycling traditional photocatalysts is solved, and it can be efficiently recycled. As for the tungsten oxide material itself, its photogenerated carrier separation ability can be improved by using a bias voltage, and it can utilize the electrolytes present in the aquatic environment, so that it can be better applied to the treatment of organic pollutants. Attached Figure Description

[0028] Figure 1 Transient photocurrent response diagrams of tungsten oxide thin film electrode materials prepared in Examples 1-4 and Comparative Examples 1-3 are shown.

[0029] Figure 2 The XRD pattern and RMAN diagram of the product of Example 1 are shown below;

[0030] Figure 3 Here is an SEM image of the product from Example 1;

[0031] Figure 4 The images shown are TEM and HREM images of the product from Example 1.

[0032] Figure 5 The image shows the UV-Vis diffuse reflectance spectrum of the product from Example 1, (αhν). 1 / 2 Compare with hν plots, XPS valence band plots, and Mott-Schottky curves;

[0033] Figure 6 The image shows the photoelectrocatalytic degradation activity of norfloxacin by the product of Example 1.

[0034] Figure 7 The image shows the photoelectrocatalytic degradation activity of the product of Example 1 under different voltages.

[0035] Figure 8This is a cyclic test diagram of the photoelectrocatalytic degradation of norfloxacin by the product of Example 1;

[0036] Figure 9 This is a graph showing the activity of the product of Example 1 in degrading NOR in different electrolytes. Detailed Implementation

[0037] To better illustrate the purpose, technical solution, and advantages of this invention, the invention will be further described below with reference to specific embodiments. Those skilled in the art should understand that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. Unless otherwise specified, the experimental methods used in the embodiments are conventional methods; the materials and reagents used, unless otherwise specified, are commercially available.

[0038] Example 1

[0039] This embodiment provides a method for preparing a tungsten oxide thin film electrode, including the following steps:

[0040] Dissolve 0.2 g of ammonium metatungstate hydrate in a mixture of 1.0 mL of water and 0.6 mL of ethanol, sonicate for 15 min, then add 0.12 mL of 1 M citric acid aqueous solution and 10 μL of Triton X-100, stir at room temperature for 60 min, and then drop 50 μL onto a 2*2 cm FTO conductive glass substrate. 2 The area was dried at room temperature and then placed in a muffle furnace and calcined at 550°C for 2 hours at a heating rate of 1°C / min. After cooling to room temperature, tungsten oxide thin film electrode material was obtained, denoted as WO3-1:10.

[0041] Example 2

[0042] Dissolve 0.2 g of ammonium metatungstate hydrate in 1.0 mL of water and 0.6 mL of ethanol, sonicate for 15 min, then add 0.12 mL of 0.1 M citric acid aqueous solution and 10 μL of Triton X-100. Stir at room temperature for 60 min, then drop 50 μL onto a 2*2 cm FTO conductive glass substrate. 2 The region was dried at room temperature and then placed in a muffle furnace and calcined at 550°C for 2 hours at a heating rate of 1°C / min. After cooling to room temperature, tungsten oxide thin film electrode material was obtained, denoted as WO3-0.1:10.

[0043] Example 3

[0044] Dissolve 0.2 g of ammonium metatungstate hydrate in 1.0 mL of water and 0.6 mL of ethanol, sonicate for 15 min, then add 0.12 mL of 0.5 M citric acid aqueous solution and 10 μL of Triton X-100. Stir at room temperature for 60 min, then drop 50 μL onto a 2*2 cm FTO conductive glass substrate.2 The region was dried at room temperature and then placed in a muffle furnace and calcined at 550°C for 2 hours at a heating rate of 1°C / min. After cooling to room temperature, tungsten oxide thin film electrode material was obtained, denoted as WO3-0.5:10.

[0045] Example 4

[0046] Dissolve 0.2 g of ammonium metatungstate hydrate in 1.0 mL of water and 0.6 mL of ethanol, sonicate for 15 min, then add 0.12 mL of 5 M citric acid aqueous solution and 10 μL of Triton X-100, stir at room temperature for 60 min, and then drop 50 μL onto a 2*2 cm FTO conductive glass substrate. 2 The region was dried at room temperature and then placed in a muffle furnace and calcined at 550°C for 2 hours at a heating rate of 1°C / min. After cooling to room temperature, tungsten oxide thin film electrode material was obtained, denoted as WO3-5:10.

[0047] Comparative Example 1

[0048] The only difference between this comparative example and Example 1 is that citric acid aqueous solution and Triton X-100 are not added, and the product prepared is denoted as WO3-0:0.

[0049] The specific preparation method of WO3-0:0 is as follows:

[0050] Dissolve 0.2 g of ammonium metatungstate hydrate in a mixture of 1.0 mL of water and 0.6 mL of ethanol, sonicate for 15 min, stir at room temperature for 60 min, and then drop 50 μL onto a 2*2 cm FTO conductive glass substrate. 2 The area was dried at room temperature and then placed in a muffle furnace and calcined at 550°C for 2 hours at a heating rate of 1°C / min. After cooling to room temperature, tungsten oxide thin film electrode material WO3-0:0 was obtained.

[0051] Comparative Example 2

[0052] The only difference between this comparative example and Example 2 is that Triton X-100 was not added, and the prepared product is denoted as WO3-0.1:0.

[0053] The specific preparation method of WO3-0.1:0 is as follows:

[0054] Dissolve 0.2 g of ammonium metatungstate hydrate in 1.0 mL of water and 0.6 mL of ethanol, sonicate for 15 min, then add 0.12 mL of 0.1 M citric acid aqueous solution, stir at room temperature for 60 min, and then drop 50 μL onto a 2*2 cm FTO conductive glass substrate. 2The area was dried at room temperature and then placed in a muffle furnace and calcined at 550°C for 2 hours at a heating rate of 1°C / min. After cooling to room temperature, tungsten oxide thin film electrode material WO3-0.1:0 was obtained.

[0055] Comparative Example 3

[0056] The only difference between this comparative example and Example 1 is that no citric acid aqueous solution was added, and the prepared product is denoted as WO3-0:10.

[0057] The specific preparation method of WO3-0:10 is as follows:

[0058] Dissolve 0.2 g of ammonium metatungstate hydrate in a mixture of 1.0 mL of water and 0.6 mL of ethanol, sonicate for 15 min, then add 10 μL of Triton X-100, stir at room temperature for 60 min, and finally drop 50 μL onto a 2*2 cm FTO conductive glass substrate. 2 The area was dried at room temperature and then placed in a muffle furnace and calcined at 550°C for 2 hours at a heating rate of 1°C / min. After cooling to room temperature, tungsten oxide thin film electrode material WO3-0:10 was obtained.

[0059] The transient photocurrent response diagrams of the tungsten oxide thin film electrode materials prepared in Examples 1-4 and Comparative Examples 1-3 are shown below. Figure 1 As shown, the addition of citric acid and Triton X-100 significantly enhances the photocurrent intensity of tungsten oxide thin-film electrode materials. The tungsten oxide thin-film electrode material prepared with 1M citric acid (Example 1) exhibits the best photoelectric conversion performance, reaching 100 mM / cm² in a 0.5M Na₂SO₄ electrolyte solution. 2 At a light intensity and a bias voltage of 1.23V (vs. RHE), 1.5mA / cm² can be generated. 2 The photocurrent on the left and right.

[0060] The XRD and Raman spectroscopy patterns of the product obtained in Example 1 are shown below. Figure 2 As shown, by Figure 2 It can be seen that the appearance of the (002) and (200) crystal planes indicates that monoclinic tungsten oxide was successfully synthesized. The characteristic peaks of the Raman spectrum match well with the monoclinic WO3, indicating that the synthesized WO3 has good crystallinity.

[0061] SEM image of the product obtained in Example 1 is shown below. Figure 3 As shown, by Figure 3 It can be seen that the prepared tungsten oxide film mainly exists in the form of irregular nanoplates on the FTO substrate, with a thickness of approximately 115 μm.

[0062] TEM and HRTEM images of the product in Example 1 are shown below. Figure 4As shown in the TEM image, tungsten oxide exhibits a nanoplate-like structure similar to that in the SEM image. The lattice fringes belonging to the (002) and (200) crystal planes of tungsten oxide can be observed in the HRTEM image.

[0063] Figure 5 The image shows the UV-Vis diffuse reflectance spectrum of the product from Example 1, (αhν). 2 Compared with hν plots, XPS valence band plots, and Mott-Schottky curves. From Figure 5 It is known that the tungsten oxide thin film electrode belongs to the n-type semiconductor with a band gap of 2.58 eV. Analysis and calculation show that its valence band position is 2.56 V. Therefore, the prepared tungsten oxide thin film electrode material has a suitable band gap and a low valence band position, which is beneficial for enhancing the oxidation ability of holes and increasing the concentration of reactive oxygen species.

[0064] The photoelectrocatalytic performance of the material in Example 1 is compared with that of the prior art, as shown in Table 1. Without loading other catalyst materials, WO3-1:10 at a bias voltage of 1.23V (vs. RHE) and 100mW / cm 2 Achievable 1.5 mA / cm² under light intensity 2 The photocurrent density is superior to that of most tungsten oxide composite catalysts, which means that the tungsten oxide thin film electrode material prepared in this invention has better photoelectrocatalytic performance.

[0065] Table 1

[0066]

[0067]

[0068] Note: The references cited in Table 1 [1] to

[10] are as follows:

[0069] [1] Qingyi Zeng, Jinhua Li, Jing Bai, Xuejin Li, Ligang Xia, Baoxue Zhou, Preparation of vertically aligned WO3 nanoplate array films based on peroxotungstate reduction reaction and their excellent photoelectrocatalytic performance, Applied Catalysis B: Environmental 202 (2017) 388-396.

[0070] [2]U.Prasad,J.Prakash,SKGupta,J.Zuniga,Y.Mao,B.Azeredo,ANMKannan,ACSApplMater Interfaces,11(2019)19029-19039.

[0071] [3]S.Bai,X.Yang,C.Liu,X.Xiang,R.Luo,J.He,A.Chen,ACS SustainableChemistry&Engineering,6(2018)12906-12913.

[0072] [4]X.Fan,T.Wang,H.Xue,B.Gao,S.Zhang,H.Gong,H.Guo,L.Song,W.Xia,J.He,ChemElectroChem,6(2019)543-551.

[0073] [5]Xiubing Huang,Guixia Zhao,and Ge Wang,Sub-nano CoO x attached ontoWO3 for efficient photocatalytic and photoelectrochemical water oxidation,J.Mater.Chem.A,2017,5,24631.

[0074] [6]J.Huang,Y.Ding,X.Luo,Y.Feng,J.Catal.2016,333,200.

[0075] [7]J.Ji,P.Sang,JHKim,Ceram.Int.2021,47,26260.

[0076] [8]P.Sang,JHKim,Int.J.Precis.Eng.Manuf.-GreenTechnol.2023,10,1015.

[0077] [9] Weihao Wu, Zhehui Yan, Lijun Wang, Xiangrong Zhu, Yongheng Zhu, Guihong Liao, and Luping Zhu, Efficient WO3 Nanoplate Arrays Photoanode Modified by ZnONanosheets for Enhanced Charge Separation and Transfer to Promote Photoelectrochemical Performances, Adv. Electron. Mater. 2024, 10, 2300777.

[0078]

[10] Weiqian Kong, Xiaofan Zhang, Shuangshuang Liu, Yannan Zhou, Binbin Chang, Shouren Zhang, Hongbo Fan, and Baocheng Yang, N Doped Carbon Dot Modified WO3 Nanolakes for Efficient Photoelectrochemical Water Oxidation, Adv. Mater. Interfaces 2019, 6, 1801653.

[0079] Example 5: Study on the catalytic degradation performance of organic pollutants

[0080] The method for evaluating the degradation performance of simulated pollutants provided by this invention is as follows:

[0081] The PEC performance of the photoanode was evaluated in a 45 mL rectangular quartz reactor containing a mixed solution of 5 mg / L NOR and 0.5 M Na₂SO₄ under simulated sunlight. The sunlight source and bias voltage were supported by a 300 W xenon lamp with an AM1.5G filter and a 0.9 V (vs. SHE) DC regulated power supply, respectively. The distance between the sunlight source and the photoanode was fixed at 10 cm. Before the PEC degradation experiment, the NOR solution was stirred in the dark for 15 min to achieve adsorption-desorption equilibrium between the photoanode and NOR. The PEC degradation experiment was then started by turning on the light source and power supply. At regular intervals, a certain amount of NOR solution was drawn using a syringe and filtered through a 0.22 μm membrane filter. The concentration of NOR in the obtained samples was determined by high-performance liquid chromatography (HPLC).

[0082] Example 1: Comparison of the photocatalytic, electrocatalytic, and photoelectrocatalytic performance of tungsten oxide thin-film electrodes on the pollutant NOR. Figure 6 As shown, where by Figure 6 (a) and Figure 6 (b) It can be seen that photoelectrocatalysis has the optimal degradation capacity; from Figure 6 (c) It can be seen that there is almost no current response in electrocatalysis, indicating that photocatalysis is mainly dominated by photocatalysis, while electrocatalysis plays an auxiliary role.

[0083] Example 1: The photoelectrocatalytic degradation activity of tungsten oxide thin-film electrode under different voltages, such as... Figure 7 As shown, the tungsten oxide thin film electrode can remove 70% of NOR at a low voltage of 0V, with the optimal voltage being 0.9V. It can degrade 100% of NOR within 60 minutes and generate a photocurrent of 1.5mA / cm2.

[0084] Example 1: Cyclic test results of photoelectrocatalytic degradation of NOR using a tungsten oxide thin-film electrode are as follows: Figure 8 As shown, after 5 cycles, NOR still achieved 100% degradation within 60 minutes, and the photocurrent density did not decrease significantly. This demonstrates that the tungsten oxide thin-film electrode exhibits good reusability and cycling stability.

[0085] Example 1: The photoelectrocatalytic removal effect of tungsten oxide thin film electrode on NOR under different electrolyte conditions is as follows: Figure 9 As shown, compared with electrolytes H2O, NaNO3, NaH2PO4, and Na2SO4, the catalyst exhibits the highest degradation activity in the NaCl system, capable of degrading 100% of norfloxacin within 10 minutes, demonstrating its enormous potential and environmental application value in the remediation of organic pollutants in high-salt environments.

Claims

1. A tungsten oxide thin film electrode material, characterized in that, The tungsten oxide thin film electrode material consists of a substrate and a tungsten oxide thin film covering the substrate; the substrate is FTO conductive glass; the thickness of the tungsten oxide thin film is 110–120 μm. The preparation method of the tungsten oxide thin film electrode material includes the following steps: S1: Dissolve ammonium metatungstate in a solvent, then add citric acid aqueous solution and Triton X-100 to it, and stir well to obtain the precursor solution; S2: The precursor solution was drop-coated onto the confined region of FTO conductive glass, dried at room temperature, and then calcined to obtain tungsten oxide thin film electrode material; The ratio of ammonium metatungstate to citric acid aqueous solution in the precursor solution is 0.2 g:0.12 mL; the concentration of the citric acid aqueous solution is 0.1–5 M. The ratio of ammonium metatungstate to Triton X-100 in the precursor solution is 0.2 g: 10 μL.

2. The tungsten oxide thin film electrode material according to claim 1, characterized in that, The oxide thin film electrode material is an n-type semiconductor with a band gap of 2.54–2.62 eV and a valence band position of 2.50–2.62 V.

3. A method for preparing the tungsten oxide thin film electrode material according to claim 1 or 2, characterized in that, Includes the following steps: S1: Dissolve ammonium metatungstate in a solvent, then add citric acid aqueous solution and Triton X-100 to it, and stir well to obtain the precursor solution; S2: The precursor solution is drop-coated onto the confined area of ​​FTO conductive glass, dried at room temperature, and then calcined to obtain tungsten oxide thin film electrode material.

4. The method for preparing tungsten oxide thin film electrode material according to claim 3, characterized in that, The solvent is an aqueous ethanol solution, and the volume fraction of ethanol in the aqueous ethanol solution is 37.5%.

5. The method for preparing tungsten oxide thin film electrode material according to claim 3, characterized in that, The amount of the precursor solution in the confined region of the FTO conductive glass in step S2 is 50 μL.

6. The method for preparing tungsten oxide thin film electrode material according to claim 3, characterized in that, The calcination parameters in step S2 are as follows: calcination at 550 °C for 2 h with a heating rate of 1 °C / min.

7. The application of the tungsten oxide thin film electrode material according to claim 1 or 2 in the degradation of organic pollutants in high saline environments.

8. The application according to claim 7, characterized in that, The saline concentration in the high-salinity environment is 0.05~1 M; the organic pollutant includes norfloxacin.

Citation Information

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