Integrated hydrogen sensing microsystem, manufacturing method and data processing method

Abstract

The invention discloses an integrated hydrogen sensing microsystem, a manufacturing method and a data processing method. Belongs to the technical field of integrated hydrogen sensing microsystems. The invention solves the problem that the current hydrogen detection depends on a single principle and is difficult to solve the precise detection problem of wide range. A first semiconductor principle electrode, a second semiconductor principle electrode and a catalytic principle heating sensitive electrode cover an aluminum oxide ceramic substrate, the first semiconductor principle electrode is connected with a first platinum bonding pad, and the catalytic principle heating sensitive electrode is connected with a second platinum bonding pad and a third platinum bonding pad. A sensitive semiconductor black body silicon carbide anti-infrared radiation packaging layer is formed on the first semiconductor principle electrode and the second semiconductor principle electrode through a semiconductor principle sensitive material, and a sensitive catalytic body black body silicon carbide anti-infrared radiation packaging layer is formed on the catalytic principle heating sensitive electrode through a catalytic principle sensitive material. According to the integrated hydrogen sensing microsystem, the manufacturing method and the data processing method, wide-range detection of hydrogen concentration is realized.

Description

Technical Field

[0001] The present invention belongs to the technical field of integrated hydrogen sensor microsystems, and in particular relates to a hydrogen sensor microsystem and a manufacturing method and a data processing method. Background Art

[0002] The world's energy forms are undergoing profound changes, and the world is ushering in a new round of energy transformation with clean and low-carbon as the main features. New energy transportation represented by hydrogen energy is showing signs of replacing traditional oil and gas transportation energy, and is rapidly penetrating into gas-fired power generation, distributed energy supply, microgrids, and multi-energy complementarity, driving the improvement of utilization efficiency and environmental protection in all aspects of energy production and transportation. Hydrogen has a wide range of sources and has the advantages of high energy density, high conversion efficiency and cleanliness. As a zero-carbon energy, hydrogen energy is a typical secondary energy source with energy properties similar to electricity, and is superior to electricity in terms of storability. Hydrogen energy will reduce CO2 emissions. Unlike traditional petroleum fuels, which are easy to transport and can be stored on a large scale, hydrogen storage and transportation technology has not yet solved problems such as energy efficiency and safety. In addition, the widely used high-pressure gas hydrogen transportation has problems such as low hydrogen storage density and high compression energy consumption, and cannot be transported on a large scale over long distances. In short, the safe use of hydrogen energy requires the protection of hydrogen sensors.

[0003] At present, the research on hydrogen gas sensor microsystem based on manufacturing is being focused on at home and abroad. It is difficult to solve the problem of accurate detection of wide range by relying on a single principle for hydrogen gas detection. Therefore, this application proposes a hydrogen gas sensor microsystem and a manufacturing method and a data processing method. Summary of the invention

[0004] The purpose of the present invention is to solve the problem of accurate detection of hydrogen gas over a wide range that is difficult to solve with a single principle. A brief overview of the present invention is given below to provide a basic understanding of certain aspects of the present invention. It should be understood that this overview is not an exhaustive overview of the present invention. It is not intended to identify the key or important parts of the present invention, nor is it intended to limit the scope of the present invention.

[0005] The technical solution of the present invention:

[0006] Solution 1: A method for manufacturing an integrated hydrogen sensing microsystem, comprising the following steps:

[0007] Step 1: Using mask electrochemical micro-additive manufacturing technology, on a three-degree-of-freedom motion platform, powered by a constant voltage-pulse power supply, electrochemically oxidize high-purity aluminum foil in an acidic electrolyte to manufacture an alumina ceramic chip with a nanopore array;

[0008] Step 2: Using the replacement reaction involving mercuric chloride, the chip is peeled off from the aluminum foil substrate, and the 1nm to 10nm barrier layer in the sensitive area of ​​the chip is etched away using a subtractive manufacturing process to form a transparent nanopore array alumina ceramic functional body in the sensitive area of ​​the chip;

[0009] Step 3: prepare a tin nitrate solution with a concentration of 3 mol% to 7 mol%, age it for 24 hours, use ammonia water as a precipitant to form a semiconductor tin dioxide material, mix it with a two-dimensional mxene quantum dot solution, and vacuum dry it to form a two-dimensional mxene quantum dot-modified tin dioxide hydrogen semiconductor nano-sensitive material;

[0010] Step 4: preparing a palladium chloride and rhodium chloride catalyst solution, heating and adding nitric acid to dissolve the palladium chloride and rhodium chloride reagents to form an acidic catalyst solution, and aging to form a catalyst solution;

[0011] Step 5: Immerse the transparent nanopore array alumina ceramic functional carrier chip in aluminum nitrate and two-dimensional MXene quantum dot solution, vacuum dry, and then put it into the catalyst iridium, rhodium, and palladium noble metal salt solution, vacuum filter, take out the chip and perform high-temperature heat treatment under nitrogen protection to remove chloride ions, forming a catalytic hydrogen sensitive chip with quantum dot characteristics;

[0012] Step 6: Make a hollow electrode mask, use a sputtering process to form a platinum-sensitive heating electrode on the chip, and form a stable platinum-sensitive heating electrode after heat treatment;

[0013] Step 7: Use a dispensing process to coat the two-dimensional MXene quantum dot-modified tin dioxide sensitive material on the chip, and perform high-temperature heat treatment under nitrogen protection;

[0014] Step 8: forming a black body silicon carbide infrared radiation protection packaging layer of particle size on the platinum electrode of the chip by using a spraying process, and fixing the silicon carbide layer by high temperature heat treatment;

[0015] Step 9: Using the slurry sintering process, the leads are welded to the chip through the platinum slurry;

[0016] Step 10: Assemble the chip using a standard tube socket, weld the leads, and assemble the cap to form an integrated hydrogen sensing microsystem.

[0017] Furthermore, in the step 4, the palladium:rhodium molar ratio of the acidic catalyst solution is 3:1, and the comprehensive concentration is 2% to 4%. The prepared acidic catalyst solution is treated at 70°C to 90°C for 1h to 2h to fully dissolve the acidic catalyst solution, and then the acidic catalyst solution is aged for more than 24h to form a catalyst solution.

[0018] Furthermore, in the step five, the chip is taken out and subjected to high temperature treatment at 700° C. under nitrogen protection, and the resulting catalytic hydrogen sensitive chip has quantum dot features of 5 nm to 10 nm.

[0019] Furthermore, in step six, a 1 μm to 2 μm platinum sensitive heating electrode is formed on the chip, and the heat treatment temperature is 900° C. to 1100° C.

[0020] Furthermore, in step seven, the high temperature heat treatment temperature is 600°C.

[0021] Furthermore, in the step eight, the size of the formed black body silicon carbide infrared radiation protection packaging layer is 10 μm to 20 μm, and the thickness is 30 nm to 90 nm.

[0022] Option 2: An integrated hydrogen sensor microsystem, which is manufactured by the manufacturing method of an integrated hydrogen sensor microsystem described in Option 1, and includes an alumina ceramic substrate. The alumina ceramic substrate is a triangular structure, and a first wire-passing hole, a second wire-passing hole and a third wire-passing hole are processed on the alumina ceramic substrate. The alumina ceramic substrate is covered with a first semiconductor principle electrode, a second semiconductor principle electrode and a catalytic principle heating sensitive electrode. The first semiconductor principle electrode is connected to a first platinum pad, and the first platinum pad is arranged in the first wire-passing hole. The catalytic principle heating sensitive electrode is connected to a second platinum pad and a third platinum pad, and the second platinum pad is arranged in the second wire-passing hole, and the third platinum pad is arranged in the third wire-passing hole. A sensitive semiconductor black body silicon carbide infrared radiation protection packaging layer is formed on the first semiconductor principle electrode and the second semiconductor principle electrode by a semiconductor principle sensitive material, and a sensitive catalytic body black body silicon carbide infrared radiation protection packaging layer is formed on the catalytic principle heating sensitive electrode by a catalytic principle sensitive material.

[0023] Solution 3: A data processing method for an integrated hydrogen sensor microsystem, which is applied to an integrated hydrogen sensor microsystem manufactured by the manufacturing method of an integrated hydrogen sensor microsystem described in Solution 2.

[0024] The hydrogen concentration was measured by catalytic combustion and semiconductor principle. The hydrogen sensing microsystem was calibrated under different concentrations and temperatures. The detection data of the sensing microsystem based on the homogeneous principle was processed by summing and averaging. The detection data of the sensing microsystem based on the heterogeneous principle was calculated by the following concentration calculation formula:

[0025] C f =C cat w cat +C semi w semi

[0026] In the formula, C cat is the hydrogen concentration measured by catalytic combustion, Csemi is the hydrogen concentration measured by the semiconductor sensor, w cat and w semi is the corresponding weight. When low concentration hydrogen is detected in the range of [0ppm, 1000ppm), w semi The value accounts for 70%, w cat Take the value of 30%; when the high concentration hydrogen detection is in the range of [1000ppm~40000ppm], w semi The value accounts for 30%, w cat The value is 70% to achieve accurate detection of hydrogen.

[0027] The present invention has the following beneficial effects:

[0028] 1. The integrated hydrogen sensor microsystem designed by the manufacturing method of an integrated hydrogen sensor microsystem of the present invention is used for safety detection of the four major links of production, storage, transportation and use in the field of hydrogen energy. The integrated sensor microsystem integrates semiconductor detection principle and catalytic combustion detection principle to realize wide range detection of hydrogen concentration.

[0029] 2. The integrated hydrogen sensor microsystem designed by the manufacturing method of the integrated hydrogen sensor microsystem of the present invention adopts the combination of electrochemical micro-additive manufacturing technology and micro-machining subtractive manufacturing technology to manufacture a chip functional structure, which not only makes the sensor microsystem compact and small in size, but also makes batch manufacturing of the microsystem possible.

[0030] 3. An integrated hydrogen sensing microsystem of the present invention adopts a triangular structure and reuses catalytic sensitive unit electrodes, which effectively reduces the space area and reduces the manufacturing cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] Figure 1 A schematic diagram of an alumina ceramic substrate for an integrated hydrogen sensing microsystem;

[0032] Figure 2 is a schematic diagram of a functional platinum electrode;

[0033] Figure 3 It is a schematic diagram of the combination of platinum electrode and alumina ceramic substrate;

[0034] Figure 4 Schematic diagram of the combination of sensitive material, substrate and platinum electrode;

[0035] Figure 5 Schematic diagram of the combination of sensitive material, substrate, platinum electrode and black body packaging layer.

[0036] In the figure: 1-alumina ceramic substrate, 2-first wire hole, 3-second wire hole, 4-third wire hole, 5-first platinum pad, 6-second platinum pad, 7-third platinum pad, 8-first semiconductor principle electrode, 9-second semiconductor principle electrode, 10-catalytic principle heating sensitive electrode, 11-semiconductor principle sensitive material, 12-catalytic principle sensitive material, 13-sensitive semiconductor black body silicon carbide anti-infrared radiation packaging layer, 14-sensitive catalytic body black body silicon carbide anti-infrared radiation packaging layer. DETAILED DESCRIPTION

[0037] In order to make the purpose, technical scheme and advantages of the present invention clearer, the present invention is described below by the specific embodiments shown in the accompanying drawings. However, it should be understood that these descriptions are only exemplary and are not intended to limit the scope of the present invention. In addition, in the following description, the description of well-known structures and technologies is omitted to avoid unnecessary confusion of the concept of the present invention.

[0038] The connection mentioned in the present invention is divided into fixed connection and detachable connection. The fixed connection (i.e., non-detachable connection) includes but is not limited to conventional fixed connection methods such as folding connection, rivet connection, bonding connection and welding connection. The detachable connection includes but is not limited to conventional detachable methods such as threaded connection, snap connection, pin connection and hinge connection. When the specific connection method is not clearly defined, it is assumed that at least one connection method can always be found in the existing connection methods to achieve the function. Those skilled in the art can choose according to their needs. For example: welding connection is selected for fixed connection, and hinge connection is selected for detachable connection.

[0039] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0040] Embodiment 1, combination Figure 1-Figure 5 This embodiment describes a method for manufacturing an integrated hydrogen sensing microsystem, which includes the following steps:

[0041] Step 1: Using mask electrochemical micro-additive manufacturing technology, on a three-degree-of-freedom motion platform, powered by a constant voltage-pulse power supply, electrochemically oxidize high-purity aluminum foil in an acidic electrolyte to manufacture an alumina ceramic chip with a nanopore array;

[0042] Step 2: Using the replacement reaction involving mercuric chloride, the chip is peeled off from the aluminum foil substrate, and the 1nm to 10nm barrier layer in the sensitive area of ​​the chip is etched away using a subtractive manufacturing process to form a transparent nanopore array alumina ceramic functional body in the sensitive area of ​​the chip;

[0043] Step 3: prepare a tin nitrate solution with a concentration of 6 mol%, age it for 24 hours, use ammonia water as a precipitant to form a semiconductor tin dioxide material, mix it with a two-dimensional mxene quantum dot solution, and vacuum dry it to form a two-dimensional mxene quantum dot-modified tin dioxide hydrogen semiconductor nano-sensitive material;

[0044] Step 4: prepare palladium chloride and rhodium chloride catalyst solutions, heat and add nitric acid to dissolve palladium chloride and rhodium chloride reagents to form an acidic catalyst solution, palladium: rhodium molar ratio = 3:1, comprehensive concentration 2%-4%, the prepared acidic catalyst solution must be treated at 70℃-90℃ for 1h-2h to fully dissolve it, and the acidic catalyst solution needs to be aged for more than 24 hours to form a catalyst solution;

[0045] Step 5: Immerse the transparent nanopore array alumina ceramic functional carrier chip in aluminum nitrate and two-dimensional MXene quantum dot solution, vacuum dry, and then put it into the catalyst iridium, rhodium, and palladium noble metal salt solution, vacuum filter, take out the chip and perform high-temperature heat treatment under nitrogen protection at 700°C to remove chloride ions and form a catalytic hydrogen sensitive chip with 5-10nm quantum dot characteristics;

[0046] Step 6: Make a hollow electrode mask, use the sputtering process to form a 1um-2um platinum sensitive heating electrode on the chip, and heat treat it at a high temperature of 900℃~1100℃ to form a stable platinum sensitive heating electrode;

[0047] Step 7: Use the dispensing process to coat the two-dimensional MXene quantum dot-modified tin dioxide sensitive material on the chip, and perform high-temperature heat treatment under nitrogen protection at a temperature of 600°C;

[0048] Step 8: Using a spraying process, a black body silicon carbide infrared radiation protection packaging layer with a thickness of 10um-20um and a particle size of 30nm-90nm is formed on the platinum electrode of the chip, and the silicon carbide layer is fixed by high temperature heat treatment;

[0049] Step 9: Using the slurry sintering process, the leads are welded to the chip through the platinum slurry;

[0050] Step 10: Assemble the chip using a standard tube socket, weld the leads, and assemble the cap to form an integrated hydrogen sensing microsystem.

[0051] The integrated hydrogen sensing microsystem manufactured by the manufacturing method of the integrated hydrogen sensing microsystem of the present embodiment includes an alumina ceramic substrate 1, which is a triangular structure. A first wire-passing hole 2, a second wire-passing hole 3 and a third wire-passing hole 4 are processed on the alumina ceramic substrate 1. A first semiconductor principle electrode 8, a second semiconductor principle electrode 9 and a catalytic principle heating sensitive electrode 10 are covered on the alumina ceramic substrate 1. The first semiconductor principle electrode 8 is connected to a first platinum pad 5, which is arranged in the first wire-passing hole 2. The catalytic principle heating sensitive electrode 10 is connected to a second platinum pad 6 and a third platinum pad 7, which is arranged in the second wire-passing hole 3, and the third platinum pad 7 is arranged in the third wire-passing hole 4. A sensitive semiconductor black body silicon carbide infrared radiation protection packaging layer 13 is formed on the first semiconductor principle electrode 8 and the second semiconductor principle electrode 9 by a semiconductor principle sensitive material 11, and a sensitive catalytic body black body silicon carbide infrared radiation protection packaging layer 14 is formed on the catalytic principle heating sensitive electrode 10 by a catalytic principle sensitive material 12.

[0052] Embodiment 2, combined Figure 1-Figure 5 To illustrate this embodiment, a working mode of an integrated hydrogen sensor microsystem of this embodiment is to realize hydrogen detection based on the semiconductor principle at 250°C and 300°C by controlling the heating voltage of the hydrogen sensor microsystem; and to realize hydrogen detection based on the catalytic combustion principle at 350°C and 400°C by controlling the heating voltage of the sensor.

[0053] For the integrated hydrogen sensing microsystem, two temperatures of 250°C and 300°C are used to detect the hydrogen concentration based on the semiconductor principle, and two temperatures of 350°C and 400°C are used to detect the hydrogen concentration based on the catalytic combustion principle. Compared with the traditional method, more abundant information is obtained, and weights of different concentrations are assigned for calculation, which effectively improves the hydrogen detection accuracy and the detection capability of the hydrogen sensing microsystem, providing a useful tool for hydrogen leakage safety detection in the hydrogen energy field and bringing great reliability to practical engineering applications.

[0054] Catalytic combustion of hydrogen is a process that converts hydrogen into water through a catalyst. Hydrogen is first adsorbed on the catalyst surface to form an active intermediate of hydrogen. The hydrogen on the catalyst surface decomposes, releasing hydrogen atoms, which recombine with oxygen atoms in the air on the catalyst surface to form water vapor. The overall chemical formula is: 2H2+O2=2H2O.

[0055] The catalytic working principle is based on the chemical reaction between hydrogen and oxygen in the air on the catalyst surface, which causes the temperature of the sensing microsystem to change. When the hydrogen concentration is high, the reaction is violent and the temperature generated is high. The temperature is detected by the platinum electrode to detect the hydrogen.

[0056] The principle of hydrogen semiconductor detection is based on the chemical reaction between hydrogen and the surface of semiconductor sensitive materials, which causes the conductivity of the sensor to change, thereby realizing the detection of hydrogen concentration. In the metal oxide semiconductor sensor, hydrogen molecules react with oxygen molecules adsorbed on the surface of the material to generate water. The reaction process is: 2H2+O2 - =2H2O+2e - The reaction releases electrons. The chemical reaction between hydrogen and the surface of the sensitive material causes the generation or consumption of electrons in the semiconductor material, thereby changing the conductivity of the material. This change in conductivity has a certain monotonic function relationship with the hydrogen concentration. By measuring the change in conductivity, the concentration of hydrogen can be calculated.

[0057] Embodiment 3, combined Figure 1-Figure 5 This embodiment is described. A data processing method of an integrated hydrogen sensor microsystem of this embodiment is to measure the hydrogen concentration by using two methods, catalytic combustion and semiconductor principle, calibrate the hydrogen sensor microsystem under different concentrations and different temperature conditions, and process the detection data of the sensor microsystem based on the homogeneous principle by summing and averaging. For the detection data of the sensor microsystem based on the heterogeneous principle, the following concentration calculation formula is used:

[0058] C f =C cat w cat +C semi w semi

[0059] In the formula, C cat is the hydrogen concentration measured by catalytic combustion, C semi is the hydrogen concentration measured by the semiconductor sensor, w cat and w semi is the corresponding weight. When low concentration hydrogen is detected in the range of [0ppm, 1000ppm), w semi The value accounts for 70%, w cat Take the value of 30%; when the high concentration hydrogen detection is in the range of [1000ppm~40000ppm], w semi The value accounts for 30%, w cat The value is 70% to achieve accurate detection of hydrogen.

[0060] This embodiment is only an exemplary description of the present invention and does not limit its protection scope. Those skilled in the art may also make partial changes thereto. As long as they do not exceed the spirit of the present invention, they are within the protection scope of the present invention.

Claims

1. A method for manufacturing an integrated hydrogen sensing microsystem, characterized in that: The following steps are involved: Step 1: Using mask electrochemical micro-additive manufacturing technology, on a three-degree-of-freedom motion platform, powered by a constant voltage-pulse power supply, electrochemically oxidize high-purity aluminum foil in an acidic electrolyte to manufacture an alumina ceramic chip with a nanopore array; Step 2: Using the replacement reaction involving mercuric chloride, the chip is peeled off from the aluminum foil substrate, and the 1nm to 10nm barrier layer in the sensitive area of ​​the chip is etched away using a subtractive manufacturing process to form a transparent nanopore array alumina ceramic functional body in the sensitive area of ​​the chip; Step 3: prepare a tin nitrate solution with a concentration of 3 mol% to 7 mol%, age it for 24 hours, use ammonia water as a precipitant to form a semiconductor tin dioxide material, mix it with a two-dimensional mxene quantum dot solution, and vacuum dry it to form a two-dimensional mxene quantum dot-modified tin dioxide hydrogen semiconductor nano-sensitive material; Step 4: preparing a palladium chloride and rhodium chloride catalyst solution, heating and adding nitric acid to dissolve the palladium chloride and rhodium chloride reagents to form an acidic catalyst solution, and aging to form a catalyst solution; Step 5: Immerse the transparent nanopore array alumina ceramic functional carrier chip in aluminum nitrate and two-dimensional MXene quantum dot solution, vacuum dry, and then put it into the catalyst iridium, rhodium, and palladium noble metal salt solution, vacuum filter, take out the chip and perform high-temperature heat treatment under nitrogen protection to remove chloride ions, forming a catalytic hydrogen sensitive chip with quantum dot characteristics; Step 6: Make a hollow electrode mask, use a sputtering process to form a platinum-sensitive heating electrode on the chip, and form a stable platinum-sensitive heating electrode after heat treatment; Step 7: Use a dispensing process to coat the two-dimensional MXene quantum dot-modified tin dioxide sensitive material on the chip, and perform high-temperature heat treatment under nitrogen protection; Step 8: forming a black body silicon carbide infrared radiation protection packaging layer of particle size on the platinum electrode of the chip by using a spraying process, and fixing the silicon carbide layer by high temperature heat treatment; Step 9: Using the slurry sintering process, the leads are welded to the chip through the platinum slurry; Step 10: Assemble the chip using a standard tube socket, weld the leads, and assemble the cap to form an integrated hydrogen sensing microsystem.

2. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 1, characterized in that: In the step 4, the molar ratio of palladium to rhodium in the acidic catalyst solution is 3:1, and the comprehensive concentration is 2% to 4%. The prepared acidic catalyst solution is treated at 70° C. to 90° C. for 1 h to 2 h to fully dissolve the acidic catalyst solution, and then the acidic catalyst solution is aged for more than 24 h to form a catalyst solution.

3. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 2, characterized in that: In the step 5, the chip is taken out and subjected to high temperature treatment at 700° C. under nitrogen protection, and the resulting catalytic hydrogen sensitive chip has quantum dot features of 5 nm to 10 nm.

4. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 3, characterized in that: In the step six, a 1 μm to 2 μm platinum sensitive heating electrode is formed on the chip, and the heat treatment temperature is 900° C. to 1100° C.

5. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 4, characterized in that: In the step seven, the high temperature heat treatment temperature is 600°C.

6. The method for manufacturing an integrated hydrogen sensing microsystem according to claim 5, characterized in that: In the step eight, the black body silicon carbide infrared radiation protection packaging layer formed has a size of 10 μm to 20 μm and a thickness of 30 nm to 90 nm.

7. An integrated hydrogen sensor microsystem, which is manufactured by the manufacturing method of an integrated hydrogen sensor microsystem according to claim 6, characterized in that: The invention comprises an alumina ceramic substrate (1), wherein the alumina ceramic substrate (1) is a triangular structure, wherein a first wire-passing hole (2), a second wire-passing hole (3) and a third wire-passing hole (4) are processed on the alumina ceramic substrate (1), wherein a first semiconductor principle electrode (8), a second semiconductor principle electrode (9) and a catalytic principle heating sensitive electrode (10) are covered on the alumina ceramic substrate (1), wherein a first platinum pad (5) is connected to the first semiconductor principle electrode (8), wherein the first platinum pad (5) is arranged in the first wire-passing hole (2), and wherein the catalytic principle heating sensitive electrode (10) is provided on the first semiconductor principle electrode (8). ) is connected to a second platinum pad (6) and a third platinum pad (7), the second platinum pad (6) is arranged in the second wire hole (3), the third platinum pad (7) is arranged in the third wire hole (4), a sensitive semiconductor black body silicon carbide infrared radiation protection packaging layer (13) is formed on the first semiconductor principle electrode (8) and the second semiconductor principle electrode (9) through a semiconductor principle sensitive material (11), and a sensitive catalytic body black body silicon carbide infrared radiation protection packaging layer (14) is formed on the catalytic principle heating sensitive electrode (10) through a catalytic principle sensitive material (12).

8. A data processing method for an integrated hydrogen sensor microsystem, the method being applied to the integrated hydrogen sensor microsystem according to claim 7, characterized in that: The hydrogen concentration was measured by catalytic combustion and semiconductor principle. The hydrogen sensing microsystem was calibrated under different concentrations and temperatures. The detection data of the sensing microsystem based on the homogeneous principle was processed by summing and averaging. The detection data of the sensing microsystem based on the heterogeneous principle was calculated by the following concentration calculation formula: C f =C cat w cat +C semi w semi In the formula, C cat is the hydrogen concentration measured by catalytic combustion, C semi is the hydrogen concentration measured by the semiconductor sensor, w cat and w semi is the corresponding weight. When low concentration hydrogen is detected in the range of [0ppm, 1000ppm), w semi The value accounts for 70%, w cat Take the value of 30%; when the high concentration hydrogen detection is in the range of [1000ppm~40000ppm], w semi The value accounts for 30%, w cat The value is 70% to achieve accurate detection of hydrogen.

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