Semiconductor device, micro-electro-mechanical system gas sensor and method

Abstract

The invention relates to a semiconductor device, a micro-electro-mechanical system gas sensor and a method. Examples provide a semiconductor device. The semiconductor device includes a radiating element and a detecting element. The radiating element includes a radiating layer for radiating electromagnetic waves. The detection element includes a detection layer for detecting electromagnetic waves. In addition, the semiconductor device includes a substrate and an interface layer. The interface layer is arranged between the radiating element and / or the detecting element and the substrate. A thermal conductivity of the radiating element and / or the detecting element is different from a thermal conductivity of the interface layer.

Description

Technical Field

[0001] The present invention relates to semiconductor devices, micro-electromechanical system gas sensors and methods Background Art

[0002] Sensing of environmental parameters such as noise, sound, temperature and gas is becoming increasingly important in mobile devices, home automation and the automotive industry. Mechanical and thermal coupling plays an important role for cross-coupling and readout quality in sensor devices, such as microelectromechanical systems (MEMS) and environmental sensors. However, cross-coupling may have a negative impact on the performance of the sensor device. Therefore, an improved concept is needed to reduce cross-coupling. Summary of the invention

[0003] This need is met by the subject matter of the independent claims.

[0004] Some aspects of the present disclosure relate to a semiconductor device, which includes a radiation element and a detection element. The radiation element includes a radiation layer for radiating electromagnetic waves. The detection element includes a detection layer for detecting electromagnetic waves. In addition, the semiconductor device also includes a substrate and an interface layer. The interface layer is arranged between the radiation element and / or the detection element and the substrate. The thermal conductivity of the radiation element and / or the detection element is different from the thermal conductivity of the interface layer.

[0005] Some aspects of the present disclosure relate to a semiconductor device, which includes a radiation element and a detection element. The radiation element includes a radiation layer for radiating electromagnetic waves. The detection element includes a detection layer for detecting electromagnetic waves. In addition, the semiconductor device also includes a substrate and a covering layer. The covering layer is arranged above the radiation element and / or the detection element. The thermal conductivity of the radiation element and / or the detection element is different from the thermal conductivity of the covering layer.

[0006] Some aspects of the present disclosure relate to a MEMS gas sensor including a semiconductor device as described above.

[0007] Some aspects of the present disclosure relate to a method, which includes forming a radiation element and a detection element on a substrate, the radiation element including a radiation layer for radiating electromagnetic waves, and the detection element including a detection layer for detecting electromagnetic waves. The method also includes forming an interface layer on the radiation element or the detection element. The thermal conductivity of the radiation element and / or the detection element is different from the thermal conductivity of the interface layer. In addition, the method also includes attaching the interface layer to another substrate.

[0008] Some aspects of the present disclosure relate to a method, the method comprising forming a radiation element and a detection element on a substrate, the radiation element comprising a radiation layer for radiating electromagnetic waves, the detection element comprising a detection layer for detecting electromagnetic waves. The method also comprises forming a covering layer on the radiation element or the detection element. The thermal conductivity of the radiation element and / or the detection element is different from the thermal conductivity of the covering layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Some examples of apparatus and / or methods will be described below, by way of example only, and with reference to the accompanying drawings, in which:

[0010] Figure 1a to Figure 1c A schematic diagram showing a cross section of a semiconductor device;

[0011] Figure 2 A schematic diagram showing a cross section of another example of a semiconductor device;

[0012] Figure 3a to Figure 3d schematic diagrams showing cross sections of other examples of portions of semiconductor devices;

[0013] Figure 4a to Figure 4b schematic diagrams showing cross sections of other examples of portions of semiconductor devices;

[0014] Figure 5a to Figure 5c schematic diagrams showing cross sections of other examples of portions of semiconductor devices;

[0015] Figure 6a to Figure 6b A schematic diagram showing a cross section of an example of a semiconductor device;

[0016] Figure 7 A block diagram showing a method for manufacturing a semiconductor device; and

[0017] Figure 8 A block diagram of a method for manufacturing a semiconductor device is shown. DETAILED DESCRIPTION

[0018] Some examples are now described in more detail with reference to the accompanying drawings. However, other possible examples are not limited to the features of these embodiments described in detail. Other examples may include modifications of these features and equivalent features and alternative features of these features. In addition, the terms used herein to describe some examples should not limit other possible examples.

[0019] Throughout the description of the accompanying drawings, the same or similar reference numerals represent the same or similar elements and / or features, which may be implemented in the same or modified form while providing the same or similar functions. For clarity, the thickness of the lines, layers and / or regions in the drawings may also be exaggerated.

[0020] When "or" is used to combine two elements a and b, this should be understood to disclose all possible combinations, i.e., only a, only b, and a and b, unless otherwise explicitly defined in individual cases. As alternative wordings for the same combination, "at least one of a and b" or "a and / or b" can be used. The same applies to combinations of more than two elements.

[0021] If singular forms such as "a", "an", and "the" are used, and such use of only a single element is not explicitly or implicitly defined as mandatory, other examples may also use multiple elements to achieve the same function. If the function is described below as being achieved using multiple elements, other examples may use a single element or a single processing entity to achieve the same function. It should also be understood that the terms "comprising", "comprising", "including", and / or "comprising" when used describe the presence of specified features, integers, steps, operations, processes, elements, components, and / or combinations thereof, but do not exclude the presence or addition of one or more other features, integers, steps, operations, processes, elements, components, and / or combinations thereof.

[0022] Figure 1a to Figure 1c Schematic diagrams showing cross sections of semiconductor devices 100a, 100b, 100c are shown. Figure 1a As shown, the semiconductor device 100a includes a substrate 110. In addition, the semiconductor device 100a also includes a radiation element 130 and a detection element 170'. The radiation element 130 includes a radiation layer 132', which is configured to radiate electromagnetic waves. The detection element 170' includes a detection layer 172, which is configured to detect electromagnetic waves. That is, the radiation element 130 can radiate electromagnetic waves to be detected by the detection element 170'. For example, the radiation element 130 can be a part of the transmitter 120, and / or the detection element 170' can be a part of the detector 160'.

[0023] The radiation element 130 may include a support layer 134, such as a semiconductor substrate or a semiconductor layer. The radiation element 130 (e.g., the radiation layer 132) may be supported by the support layer 134. For example, the radiation layer 132 may include a membrane structure or may be a membrane structure, such as a membrane or a diaphragm. For example, the radiation element 130 may be a thermal MEMS, such as an infrared heater. That is, the radiation element 130 may be a thermally active component. The support layer 134 and the radiation layer 132 may be formed as one body. That is, the radiation layer 132 may be formed from the support layer 134 (e.g., a semiconductor substrate), for example, by etching a portion of the support layer to form the radiation layer 132. Alternatively, the radiation layer 132 may be attached to the support layer 134. Optionally or alternatively, the support layer 134 may include multiple sub-layers (i.e., the support layer 134 is not formed as a single piece). For example, the radiation layer 132 may be formed in a sub-layer of the support layer 134. For example, the support layer 134 and / or the radiation layer 132 may include a semiconductor material (such as silicon, silicon carbide, silicon germanium) or may be made of a semiconductor material. Alternatively, the support layer 134 and / or the radiation layer 132 may include an insulating material (such as silicon nitride or glass) or may be made of an insulating material. That is, the detection element 130 may include silicon nitride or glass, or may be made of silicon nitride or glass.

[0024] The radiation element 130 (e.g., the radiation layer 132) can be configured to radiate electromagnetic waves. For example, the radiation layer 132 can be configured to radiate heat or thermal radiation, such as infrared radiation. The radiation layer 132 can be configured to radiate electromagnetic waves within the operating range (e.g., temperature range or wavelength range) of the detection layer 172. For example, electromagnetic waves can be radiated within a first temperature range for operating the detection layer 172 to physically (i.e., according to physical principles, such as photoacoustic principles) detect at least a first target gas between the radiation layer 132 and the detection layer 172.

[0025] For example, the radiation layer 132 may be configured to intermittently radiate electromagnetic waves. The radiated electromagnetic waves may be at least partially absorbed by the corresponding heated gas molecules. If the electromagnetic waves are no longer emitted by the radiation layer 132, the gas molecules no longer absorb heat or thermal radiation, and they cool down again. This intermittent heating and cooling causes a pressure change. This pressure change can be detected by the detection layer 172, and the detection layer 172 can convert the measured pressure change into a corresponding measurement signal. That is, the detection layer 172 may be configured to detect the electromagnetic waves radiated by the radiation layer 132. Therefore, the detection layer 172 may be configured to indirectly detect the electromagnetic waves radiated by the radiation layer 132. That is, the detection layer 172 may be configured to detect the pressure change caused by the electromagnetic waves. In this case, the detection layer 172 may be part of a thermal sensor. Optionally or alternatively, the detection layer 172 may be configured to directly detect the electromagnetic waves radiated by the radiation layer 132. That is, for example, the detection layer 172 may be configured to determine the absorption spectrum of the electromagnetic waves. In this case, the detection layer 172 may be part of a direct absorption sensor.

[0026] like Figure 1b As shown, the detection element 170 may include a support layer 174, such as a semiconductor substrate or a semiconductor layer. The detection element 170, such as the detection layer 172, may be supported by the support layer 174. For example, the detection layer 172 may include a microphone structure (such as a MEMS microphone, a pressure-sensitive transducer, a piezoelectric transducer, a capacitive sensor, a thermal structure, a mechanical strain-sensitive structure, and / or a magnetic field-sensitive structure) or may be a microphone structure. For example, the detection element 170 may be a thermally sensitive component. Therefore, the semiconductor devices 100a, 100b, 100c may be used in a MEMS gas sensor (such as a miniaturized photoacoustic spectrometer sensor or a thermally sensitive device) (see FIG. 6).

[0027] The support layer 174 and the detection layer 172 can be formed as one body. That is, the detection layer 172 can be formed from the support layer 174 (e.g., a semiconductor substrate), for example, by etching a portion of the support layer to form the detection layer 172. Alternatively, the detection layer 172 can be attached to the support layer 174. Optionally or alternatively, the support layer 174 may include a plurality of sublayers (i.e., the support layer 174 is not formed as a single piece). For example, the detection layer 172 may be formed in a sublayer of the support layer 174. For example, the support layer 174 and / or the detection layer 172 may include a semiconductor material (such as silicon, silicon carbide, silicon germanium) and / or a piezoelectric material (such as lithium niobate, aluminum nitride, barium titanate), or may be made of a semiconductor material and / or a piezoelectric material. Alternatively, the support layer 174 and / or the detection layer 172 may include an insulating material (such as silicon nitride or glass) or may be made of an insulating material. That is, the detection element 170 may include or may be made of silicon nitride or glass.

[0028] For example, the substrate 110 may be a printed circuit board or a lead frame. Because the radiation elements 130, 130' and the detection elements 170, 170' may be thermally connected via the substrate 110, the heat energy generated in the radiation elements 130, 130' may affect the functionality of the detection elements 170, 170'. The smaller the distance between the radiation elements 130, 130' and the detection elements 170, 170' becomes, the faster they may react to temperature changes (i.e., reduced heat capacity and increased thermal modulation). The thermal modulation on the radiation elements 130, 130' (caused by the process of radiating electromagnetic waves) may produce a modulated differential pressure. The modulated differential pressure may interfere with the optically generated photoacoustic signal, i.e., the pressure change caused by the gas, and may therefore have a negative impact on the detection elements 170, 170'. That is, the thermal modulation on the radiation elements 130, 130' (e.g., by parasitic heat signals) may be conducted to the thermosensitive detection elements 170, 170', and may affect the sensitivity of the detection elements 170, 170' due to cross coupling. Thus, the accuracy of the detection elements 170 , 170 ′ may be reduced and / or the errors of the detection elements 170 , 170 ′ may be increased.

[0029] To reduce cross coupling, the radiating element 130 and / or the detecting element 170 may be at least partially thermally decoupled. This may be accomplished by using an interface layer 140 having a different thermal conductivity than the radiating element 130 or the detecting element 170, respectively (see Figure 1a and Figure 1c ) and / or interface layer 180 (see Figure 1b and Figure 1c For example, a thermal or mechanical interconnect for a thermal stress sensitive device for a MEMS microphone, sensor or sensitive component may include semiconductor devices 100a, 100b, 100c, and semiconductor devices 100a, 100b, 100c include interface layers 140, 180.

[0030] The inventors have discovered that a defined thermally conductive interface may be required to adjust the thermal conductivity and thermal path in a manner that demodulates the parasitic thermal signal (caused by the radiating element 130, 130' radiating the electromagnetic wave) from the sensor measurement signal (the electromagnetic wave measured by the detection element 170, 170'). The thermally conductive interface can be provided by the interface layer 140, 180. Typically, the emitter or detector does not include a separate interface layer. The detector 160' and the emitter 120' typically do not have an interface layer (see Figure 1a and Figure 1b ). The material between the radiation element 130' / detection element 170' and the substrate 110 is the same as the material of the radiation element 130' / detection element 170'. Therefore, the parasitic heat signal caused by the emitter 120' may have a negative impact on the detector 160'.

[0031] The thermally conductive interface, ie, the interface layer 140 , 180 , can reduce cross coupling between the radiating element 130 , 130 ′ and the detecting element 170 , 170 ′. For example, the interface layer 140 , 180 can include a smaller or larger thermal conductivity than the radiating element 130 and / or the detecting element 170 .

[0032] like Figure 1a As shown, the interface layer 140 may be arranged only between the radiation element 130 and the substrate 110. Optionally or alternatively, the interface layer 180 may be arranged only between the detection element 170 and the substrate 110 (see Figure 1b Optionally or alternatively, an interface layer 140 may be arranged between the radiating element 130 and the substrate 110, and an interface layer 180 may be arranged between the detecting element 170 and the substrate 110 (see Figure 1c ).

[0033] The interface layers 140, 180 can allow for providing a thermally isolated material stack (e.g., emitter 120 or detector 160) that utilizes a thermally decoupling material (part of the interface layers 140, 180), such as an insulating material or a conductive material having a thermal conductivity that is different from the thermal conductivity of the radiating element 130 and / or the detecting element 170. The thermally decoupling material can demodulate the thermal oscillations caused by the radiating element 130 to a frequency other than the induced pressure changes detected by the detecting element 170'. In this way, the modulated parasitic temperature oscillations of the material stack can be converted into a slow temperature drift by the thermally isolated material stack. That is, the thermally isolated material stack can be improved for use in thermal paths. Optionally, the thermally isolated material stack can be combined with an arrangement mounted as a flip chip (e.g., see Figure 1c , Figure 3d , Figure 4a , Figure 4b , Figure 5b , Figure 5c , Figure 6a In this way, cross coupling between the radiating elements 130, 130' and the detectors 170', 170 can be reduced in an advantageous manner. A thermally isolating material stack design can be used for the emitter 120 and / or the detector 160.

[0034] For example, Figure 1c An example of a transmitter 120 assembled using flip chip mounting is shown. In this case, the interface layer 140 can be manufactured as a "cover layer" of the intermediate semiconductor device. The intermediate semiconductor device can be attached to the substrate 110 using flip chip mounting. In this way, the "cover layer" of the intermediate semiconductor device can become the interface layer 140. Therefore, the radiation element 130 can be supported by the interface layer 140. The radiation element 130 can face the interface layer 140.

[0035] The thermally isolating material stack including interface layers 140, 180 may improve the performance of detection elements 170', 170 due to lower parasitic signals and / or may allow for a reduced distance between radiating elements 130, 130' and detection elements 170', 170 due to possible thermal improvements.

[0036] For example, the interface layers 140, 180 may include an insulating material (such as glass or silicon nitride) or a conductive material (such as doped silicon (if the radiation element 130' / detection element 170' includes undoped silicon or is made of undoped silicon), single crystal silicon (if the radiation element 130' / detection element 170' includes polycrystalline silicon or is made of polycrystalline silicon) or metal (such as copper, gold, silver)) or may be made of an insulating material or a conductive material, that is, the thermal decoupling material may include an insulating material or a conductive material or may be made of an insulating material or a conductive material. The thickness of the interface layers 140, 180 may be at least 10 μm, or at least 30 μm, or at least 50 μm, or at least 100 μm and / or at most 1400 μm, or at most 1600 μm, or at most 1800 μm, or at most 2000 μm. The material of the (emitter) interface layer 140 may be different from the material of the (detector) interface layer 180, for example, the (emitter) interface layer material may be an insulating material, while the (detector) interface layer material may be a conductive material or a different insulating material. For example, the (emitter) interface layer 140 may include a conductive material, while the (detector) interface layer 180 may include an insulating material. In this way, the parameters of the emitter 120 and the detector 160 may be adjusted independently.

[0037] In an example, the thermal conductivity of the radiating element 130 and / or the detecting element 170 may differ from the thermal conductivity of the interface layer 140, 180 by at least 5 times, or at least 7 times, or at least 9 times, or at least 10 times, or at least 12 times, or at least 14 times. In this way, the interface layer 140, 180 may thermally decouple the radiating element 130 and / or the detecting element 170. The difference in multiples may mean that the difference in thermal conductivity is either less than the multiple or greater than the multiple. For example, the thermal conductivity of the interface layer 140, 180 may be 10 times greater or 10 times less than the thermal conductivity of the radiating element 130 or the detecting element 170. For example, the radiation element 130 and / or the detection element 170 may include silicon (150-170 W / (m*K)) or may be made of silicon, and the interface layers 140, 180 may include silicon nitride (10-50 W / (m*K)), glass (1.5 W / (m*K)) or metal (such as copper (398 W / (m*K)), gold (315 W / (m*K)), silver (429 W / (m*K))) or may be made of silicon nitride, glass or metal. For example, the radiation element 130 and / or the detection element may include glass or may be made of glass (for example, the support layers 134, 174 may include glass or may be made of glass), and the interface layers 140, 180 may be made of silicon (for example, doped silicon, undoped silicon, single crystal silicon or polycrystalline silicon). In this case, the interface layers 140, 180 may partially thermally decouple the radiation element 130 / detection element 170 from the substrate 110. In this way, cross coupling may be reduced and the performance of the detection elements 170 , 170 ′ may be improved.

[0038] To improve thermal decoupling, the interface layers 140, 180 may be insulating layers. In an example, the interface layers 140, 180 may have a thermal conductivity of less than 10 W / (m*K), or less than 7 W / (m*K), or less than 4 W / (m*K), or less than 2 W / (m*K). For example, the interface layers 140, 180 may include glass and / or polymers (such as acrylonitrile butadiene styrene (0.1-0.25 W / (m*K)), polycarbonate (0.2-0.35 W / (m*K)), polybutylene terephthalate (0.2-0.3 W / (m*K))). In this way, the interface layers 140, 180 may serve as insulating layers. Therefore, heat transfer between the radiation element 130 / detection element 170 and the substrate 110 may be strongly attenuated. Alternatively, the interface layers 140, 180 may be conductive layers. In an example, the interface layer 140, 180 may have a thermal conductivity of at least 150 W / (m*K), or at least 170 W / (m*K), or at least 190 W / (m*K), or at least 200 W / (m*K), or at least 300 W / (m*K), or at least 380 W / (m*K). Reducing or increasing heat transfer between the radiating element 130 / detecting element 170 and the substrate 110 may allow for improved thermal decoupling from the detecting element 170, 170' to the radiating element 130, and / or from the radiating element 130, 130' to the detecting element 170. In this way, cross coupling may be further reduced, and the performance of the detecting element 170, 170' may be improved.

[0039] In an example, the interface layer 140, 180 may include glass or may be made of glass. For example, the glass may include silicon oxide (such as silicon dioxide quartz) or phosphosilicate glass, or may be made of silicon oxide or phosphosilicate glass. In this way, the interface layer 140, 180 may be used as an insulating layer. Further, the glass may facilitate processing of the emitter 120 / detector 160, such as attachment to the substrate 110. In addition, the interface layer 140, 180 comprising glass may provide an improved interface between the interface layer 140, 180 and the substrate 110 compared to an adhesive. The interface layer 140, 180 may include a surface that may be attached to the substrate 110. For example, the interface layer 140, 180 (e.g., a glass layer or a silicon nitride layer) may be attached to a surface without an adhesive. In this way, the interface between the substrate 110 and the emitter 120 / detector 160 may be improved. For example, inaccurate contact between the interface layer 140 and the surface due to the adhesive may be avoided.

[0040] In an example, the interface layer 140, 180 can be directly attached to the substrate 110. For example, the interface layer 140, 180 can be attached to the substrate 110 by bonding (e.g., glass to silicon anodic bonding, glass frit bonding, eutectic, transient liquid metal, or metal to metal thermocompression bonding). For example, adhesive-free wafer bonding techniques (such as surface activated bonding or hydrophilic bonding) can be used to attach the interface layer 140, 180 to the substrate 110. These methods rely on surface activation or modification to create a bond without the use of an adhesive. Because the interface layer 140, 180 can be directly attached to the substrate 110, the interface between the emitter 120 / detector 160 and the substrate 110 can be improved.

[0041] As above reference Figure 1c As described above, the interface layers 140, 180 may be "capping layers" of the intermediate semiconductor device. In this case, the radiation layer 132 may face the interface layers 140, 180. That is, the radiation layer 132 may be formed on or in the surface of the radiation element 130 facing the interface layers 140, 180. In an example, the interface layers 140, 180 may include a cavity 144. Further, the radiation layer 132 may face the cavity. For example, the radiation layer 132 may be arranged above the cavity 144 to prevent contact between the interface layers 140, 180 and the radiation layer 132. In this case, the thermal isolation material stack (including the interface layers 140, 180 and the radiation element 130) may be attached to the substrate 110 (e.g., using a flip chip mount). Alternatively, the interface layers 140, 180 may be attached to the substrate 110, and the radiation element 130 may be attached to the interface layers 140, 180. That is, both the emitter 120 and the detector 160 may be formed using flip chip mounting, or alternatively, by attaching the interface layers 140 , 180 to the substrate 110 and by attaching the radiating element 130 / detecting element 170 to the interface layers 140 , 180 .

[0042] In an example, the interface layer 140, 180 may be attached to the radiating element 130 and / or the detecting element 170. For example, the radiating element 130 may be an emitting layer 130. The emitting layer 130 may include a radiating layer 132. That is, the emitting layer 130 may be configured to radiate electromagnetic waves. The emitting layer 130 may be formed separately from the interface layer 140. Therefore, the emitting layer 130 may be attached to the interface layer 140. For example, the emitting layer 130 may be attached to the supporting layer 134, and the supporting layer 134 may be attached to the interface layer 140. Alternatively, the emitting layer 130 may be directly attached to the interface layer 140.

[0043] For example, the detection element 170 may be a measurement layer. The measurement layer 170 may include a detection layer 172. That is, the measurement layer 170 may be configured to measure electromagnetic waves. The measurement layer 170 may be formed separately from the interface layer 180. Therefore, the measurement layer 170 may be attached to the interface layer 180. For example, the measurement layer 170 may be attached to the support layer 174, and the support layer 174 may be attached to the interface layer 180. Alternatively, the measurement layer 170 may be directly attached to the interface layer 180.

[0044] As described above, the radiating element 130 may be a thermally active component, and the detecting element 170 may be a thermally sensitive component. Therefore, in an example, the radiating element 130 or the detecting element 170 may be electrically connected to the substrate 110 via a coupling element. For example, the radiating element 130 and the detecting element 170 may be connected to the substrate 110 via a plurality of coupling elements. The coupling element may be an electrical connection between the radiating element 130 / detector 170 and the substrate 110. In an example, the coupling element may include or may be a solder ball, a via, a conductive adhesive, and / or a wire bond.

[0045] In an example, the semiconductor device 100a, 100b, 100c may further include an underfill layer arranged between the radiation element 130 or the detection element 170 and the substrate 110 (see also FIG. 4, Figure 5b , Figure 5c ). The bottom fill layer can improve the stability of the emitter 120 and / or the detector 160. In addition, the bottom fill layer can increase the design flexibility of the semiconductor devices 100a, 100b, 100c. In addition, the material of the bottom fill layer can be selected according to the thermal conductivity. That is, the bottom fill layer can be used to adjust the thermal conductivity of the emitter 120 / detector 160. Therefore, the bottom fill layer can be used to adjust the thermal conductivity during the back-end process. In this way, the thermal conductivity of the emitter 120 / detector 160 can be adjusted using the front-end process (for example, bonding the interface layer 140, 170 to the substrate 110) and using the back-end process (for example, forming the bottom fill layer).

[0046] In an example, an underfill layer may be disposed between the interface layer 140, 180 and the substrate 110. In an example, the interface layer 140, 180 may be at least partially embedded in the underfill layer. In an example, the semiconductor device 100a, 100b, 100c may further include solder balls that electrically couple the radiating element or the detecting element to the substrate. The solder balls may be partially embedded in the underfill layer. In an example, the solder balls may extend along the lateral dimensions of the interface layer 140, 180.

[0047] In an example, the semiconductor device 100a, 100b, 100c may further include a cover layer disposed over the radiating element 130 and / or the detecting element 170. The cover layer is transparent to infrared light. The cover layer may cover the radiating element 130 and / or the detecting element 170. The cover layer may not block or interfere with the radiated electromagnetic waves. The cover layer may also be used to thermally decouple the radiating element 130 and / or the detecting element 170. For example, the thermal conductivity of the cover layer may be different from the thermal conductivity of the radiating element and / or the detecting element (e.g., see Figure 2 , Figure 3b ).

[0048] More details and aspects are mentioned in conjunction with the examples described below. The example shown in FIG. 1 may include one or more optional or additional features that correspond to one or more aspects mentioned in conjunction with the proposed concept, or to the following (e.g., Figures 2 to 8 ) corresponds to one or more aspects mentioned in one or more examples described.

[0049] Figure 2 A schematic diagram showing a cross section of another example of a semiconductor device 200. The semiconductor device 200 includes a substrate 210. In addition, the semiconductor device 200 includes a radiation element 230 and a detection element 270. The radiation element 230 includes a radiation layer 232, which is configured to radiate electromagnetic waves. The detection element 270 includes a detection layer 272, which is configured to detect electromagnetic waves. That is, the radiation element 230 can radiate electromagnetic waves to be detected by the detection element 270. For example, the radiation element 230 can be a part of the emitter 220, and / or the detection element 270 can be a part of the detector 260.

[0050] 1 , arranging the radiating element 230 and the detecting element 270 in the semiconductor device 200 may result in cross coupling. The cross coupling may be reduced by the interface layer as described with reference to FIG1 . Optionally or alternatively, the cross coupling may also be reduced by the cover layer 250 , 290 .

[0051] Thus, the semiconductor device 200 may include a cover layer 250, 290 disposed above the radiation element 230 and / or the detection element 270. The thermal conductivity of the radiation element 230 and / or the detection element 270 may be different from the thermal conductivity of the cover layer 250, 290. The cover layer 250, 290 may affect the heat generation and / or heat distribution in the emitter 220 and / or the detector 260. Thus, the cover layer 250, 290 may be used to adjust the heat transfer to the substrate 210. For example, the cover layer 250, 290 may cause an increased heat transfer toward the substrate 210 or a reduced heat transfer toward the substrate 210. In this way, the undesired heat generated in the emitter 210 and transferred into the substrate 210 may be at least partially thermally decoupled from the desired electromagnetic waves radiated by the radiation element 230.

[0052] The cover layer 250, 290 may be a separate layer attached to the radiating element 230 / detecting element 270. The above description of the interface layer (FIG. 1) also applies to the cover layer 250, 290. That is, the cover layer 250, 290 may have the same properties and parameters as the interface layer.

[0053] Alternatively, the cover layer 250, 290 may be combined with an interface layer. In this case, regulation of heat transfer may be facilitated.

[0054] Figure 2 Only examples of cover layer 250 over radiating element 230 and cover layer 290 over detecting element 270 are shown. In other examples, cover layer 250 or cover layer 290 may be disposed only over radiating element 230 or only over detecting element 270, respectively.

[0055] Further details and aspects are mentioned in conjunction with the examples described above and / or below. Figure 2 The illustrated examples may include one or more optional or additional features that correspond to one or more aspects mentioned in conjunction with the proposed concept, or to the above (e.g., FIG. 1 ) and / or the following (e.g., FIG. 3 - Figure 8 ) corresponds to one or more aspects mentioned in one or more examples described.

[0056] Figure 3a to Figure 3d Schematic diagrams showing cross sections of other examples of portions of semiconductor devices. Figure 3a to Figure 3dAn exemplary emitter 320a, 320b, 320c, 320d having a three-layer stack (i.e., interface layers 336a, 340b, 340c, 340d, radiating elements 330a, 330b, 330c, 330d including support structures 334a, 334b, 334c, 334d, and cover layers 350a, 350b, 356c, 356d) is shown. The three-layer stack is an example. In other examples, the stack may include fewer layers (e.g., two layers (see FIG. 5)) or more layers. Optionally, the interface layers 336a, 340b, 340c, 340d and / or the radiating elements 330a, 330b, 330c, 330d may include multiple layers.

[0057] Figure 3a An example of a transmitter 320a is shown. The transmitter 320a may be based on Figure 2 The emitter 320a may include a substrate 310a, an interface layer 336a, a radiation element 330a, and a cover layer 350a. The thermal conductivity of the interface layer 336a may be the same as the thermal conductivity of the radiation element 330a. The thermal conductivity of the radiation element 330a may be different from the thermal conductivity of the cover layer 350a. Therefore, thermal decoupling may be achieved using the cover layer 350a. The radiation element 330a may include a support layer 334a, which is configured to support the radiation layer. In addition, Figure 3a A coupling element 302a, such as a wire bond 302a, is shown that is configured to electrically connect the substrate 310a with the radiating element 330a. For example, the cover layer 350a can include or can be made of glass or silicon nitride. For example, the radiating element 330a and / or the interface layer 336a can include or can be made of a semiconductor material (such as silicon, silicon carbide, silicon germanium).

[0058] The substrate 310a and the interface layer 336a may include or be made of silicon and may be bonded together. For example, silicon-to-silicon bonding may be achieved by glass frit bonding, eutectic bonding, transient liquid metal bonding, or metal-to-metal thermal compression bonding.

[0059] Figure 3b An example of a transmitter 320b is shown. The transmitter 320b may be a transmitter according to FIG. 1 and / or Figure 2The emitter 320b may include a substrate 310b, an interface layer 340b, a radiation element 330b, and a cover layer 350b. The thermal conductivity of the interface layer 340b may be different from the thermal conductivity of the radiation element 330b. The thermal conductivity of the radiation element 330b may be different from the thermal conductivity of the cover layer 350b. Therefore, thermal decoupling may be achieved using the cover layer 350b and the interface layer 340b. The radiation element 330b may include a support layer 334b, which is configured to support the radiation layer. In addition, Figure 3b A coupling element 302b is shown, such as a wire bond 302b, which is configured to electrically connect the substrate 310b with the radiating element 330b. For example, the cover layer 350b and / or the interface layer 340b may include or be made of glass or silicon nitride. The radiating element 330b may include or be made of a semiconductor material (such as silicon, silicon carbide, silicon germanium) and / or a piezoelectric material (such as lithium niobate, aluminum nitride, barium titanate).

[0060] The interface layer 340b may be attached to the substrate 310b using a bonding technique such as anodic bonding, frit bonding, eutectic bonding, transient liquid metal bonding, or metal-to-metal thermocompression bonding.

[0061] Figure 3c An example of an emitter 320c is shown. The emitter 320c may be part of a semiconductor device according to FIG. 1 . The emitter 320c may include a substrate 310c, an interface layer 340c, a radiation element 330c, and a cover layer 356c. The thermal conductivity of the interface layer 340c may be different from the thermal conductivity of the radiation element 330c. The thermal conductivity of the radiation element 330c may be the same as the thermal conductivity of the cover layer 356c. Therefore, thermal decoupling may be achieved using the interface layer 340c. The radiation element 330c may include a support layer 334c, which is configured to support the radiation layer. In addition, Figure 3c A coupling element 302c, such as a wire bond 302c, is shown that is configured to electrically connect the substrate 310c with the radiating element 330c. For example, the interface layer 340c can include or can be made of glass or silicon nitride. For example, the radiating element 330c and / or the cover layer 356c can include or can be made of a semiconductor material (such as silicon, silicon carbide, silicon germanium).

[0062] and Figure 3b In contrast, the interface layer 340c can be attached to the substrate 310c using the attachment layer 342c. For example, the attachment layer 342c can include or be made of an adhesive or an elastomer.

[0063] Figure 3dAn example of an emitter 320d is shown. The emitter 320d may be part of a semiconductor device according to FIG. 1 . The emitter 320d may include a substrate 310d, an interface layer 340d, a radiation element 330d, and a cover layer 356d. The thermal conductivity of the interface layer 340d may be different from the thermal conductivity of the radiation element 330d. The thermal conductivity of the radiation element 330d may be the same as the thermal conductivity of the cover layer 356d. Therefore, thermal decoupling may be achieved using the interface layer 340d. The radiation element 330d may include a support layer 334d configured to support the radiation layer. In addition, Figure 3d A coupling element 302d is shown, for example, a through substrate via (such as a through glass via) configured to electrically connect the substrate 310d with the radiating element 330d. For example, the interface layer 340d can include, or can be made of, glass or silicon nitride. For example, the radiating element 330d and / or the cover layer 356d can include, or can be made of, a semiconductor material (such as silicon, silicon carbide, silicon germanium).

[0064] like Figure 3d As shown, the radiation layer 332d can face the interface layer 340d. The interface layer 340d can include a cavity 344d. The radiation layer 332d can face the cavity 344d. That is, the surface of the radiation element 330d (on which or in which the radiation element 332d is formed) can face the interface layer 340d. Therefore, Figure 3d Emitter 320d is shown, which may be fabricated using flip chip mounting.

[0065] Combination Figure 3a to Figure 3d The description of emitters 320a, 320b, 320c, 320d also applies to the detectors.

[0066] Even in Figure 3a to Figure 3d Different features are shown separately, and they can also be combined with each other. Figure 3b The emitter 320b may include through silicon vias instead of wire bonds, and may alternatively be fabricated using flip chip mounting, or according to Figure 3d The semiconductor device 300d may include a capping layer 356d including or made of glass or silicon nitride.

[0067] Even though Figure 1 and Figure 2 Separate methods for emitters and detectors of semiconductor devices are shown, but they can also be combined. For example, a semiconductor device may include a Figure 3d The transmitter and Figure 3a Detector.

[0068] Further details and aspects are mentioned in conjunction with the examples described above and / or below. The example shown in FIG. 3 may include one or more optional or additional features that correspond to one or more aspects mentioned in conjunction with the proposed concept, or to the above (e.g., FIGS. 1 to 3). Figure 2 ) and / or below (e.g., Figures 4 to Figure 8 ) corresponds to one or more aspects mentioned in one or more examples described.

[0069] Figure 4a to Figure 4b Schematic diagrams showing cross sections of other examples of portions of semiconductor devices. Figure 4a 1 shows an emitter 420a. The emitter 420a may be part of the semiconductor device according to FIG. 1. The emitter 420a may include a substrate 410a, an interface layer 440a, a radiating element 430a, and a cover layer 456a. The emitter 420a may also include an optional underfill layer 408a. The underfill layer 408a may be arranged between the substrate 410a and the radiating element 430a. Figure 4a As shown, the bottom filling layer 408a may partially surround the interface layer 440a. In other words, the interface layer 440a may be embedded in the bottom filling layer 408a.

[0070] The interface layer 440a may include a cavity 444a. The radiation layer 432a of the radiation element 430a may face the cavity 444a. That is, the radiator 420a may be manufactured using flip chip mounting.

[0071] In addition, the radiator 420a includes a coupling element 402a. The coupling element 402a can be a solder ball or a copper pillar. The coupling element 402a can be partially surrounded by an underfill material 408a. The solder ball or copper pillar can be advantageous if the interface layer 440a has a smaller cross-section than the radiating element 430a. For example, the stack of thermal isolation material can be flip-chip soldered to a substrate 410a (e.g., a lead frame or a printed circuit board) via the solder ball or copper pillar. The coupling element 402a can be electrically connected to a conductive trace 409a (e.g., a solder cap arranged on top of the interface layer 440a and the underfill 408a). The conductive trace 409a can be electrically connected to the radiating layer 432a. The underfill 408a can increase the stability of the radiator 420a, and / or can protect the coupling element 402a, for example, from corrosion.

[0072] The interface layer 440a may include or may be made of glass or silicon nitride.For example, the radiating element 430a and / or the cover layer 456a may include or may be made of a semiconductor material (such as silicon, silicon carbide, silicon germanium).

[0073] Figure 4bAnother example of a transmitter 420b is shown. The transmitter 420b may be part of the semiconductor device according to FIG. 1 . The transmitter 420b may include a substrate 410b, an interface layer 440b, a radiation element 430b, and a cover layer 456b. The transmitter 420b may also include an optional bottom fill layer 408b. The bottom fill layer 408b may be arranged between the substrate 410b and the radiation element 430b. Figure 4a As shown, the bottom filling layer 408b may partially surround the interface layer 440b. In other words, the interface layer 440b may be embedded in the bottom filling layer 408b.

[0074] The interface layer 440b may include a cavity 444b. The radiation layer 432b of the radiation element 430b may face the cavity 444b. That is, the radiator 420b may be manufactured using flip chip mounting.

[0075] In addition, the transmitter 420a includes a coupling element 402a. Figure 4b In contrast, the cross-section of the interface layer 440b may be at least the same as the cross-section of the radiating element 430b. Thus, the coupling element 402a may include a through-substrate via 406b (such as a through-glass via 406b) and a solder ball 404b. The solder ball 404b may be partially surrounded by an underfill material 408b.

[0076] Through-glass vias 406 may be formed, for example, through a glass "cover layer" of the intermediate semiconductor device. The intermediate semiconductor device may be flip-chip mounted to substrate 410b (e.g., a lead frame or printed circuit board) via solder balls or copper pillars. Coupling element 402b may be electrically connected to conductive trace 409b (e.g., a solder cap disposed on top of interface layer 440b). Conductive trace 409b may be electrically connected to radiative layer 432b.

[0077] The interface layer 440b may include or may be made of glass or silicon nitride.For example, the radiating element 430b and / or the cover layer 456b may include or may be made of a semiconductor material (such as silicon, silicon carbide, silicon germanium).

[0078] Combination Figure 4a to Figure 4b The description of the emitters 420a, 420b also applies to the detectors.

[0079] More details and aspects are mentioned in conjunction with the examples described above and / or below. The example shown in FIG. 4 may include one or more optional or additional features that correspond to one or more aspects mentioned in conjunction with the proposed concept, or to the above (e.g., FIGS. 1 to 3 ) and / or below (e.g., FIGS. 5 to 6 ). Figure 8 ) corresponds to one or more aspects mentioned in one or more examples described.

[0080] Figure 5a to Figure 5c Schematic diagrams showing cross sections of other examples of portions of semiconductor devices. Figure 5a to Figure 5c An exemplary radiator 520a, 520b, 520c having a two-layer stack, namely an interface layer 540a, 540b, 540c, 340d and a radiating element 530a, 530b, 330c, 330d including a support structure and a cover layer, is shown.

[0081] Figure 5a Shown with Figure 3a Transmitter 520a may be based on Figure 2 The semiconductor device may include a substrate 510a, a radiation element 530a, and a cover layer 550a. Figure 3a In contrast, emitter 520a does not include a separate interface layer. Radiating element 530a may include a radiating layer and may be attached to substrate 510a. For example, attachment layer 542a may be used to attach radiating element 530a to substrate 510a. Attaching radiating element 530a to substrate 510a may facilitate the manufacturing process of semiconductor devices.

[0082] also, Figure 5a A coupling element 502a, such as a wire bond 502a, is shown, which is configured to electrically connect the substrate 510a with the radiating element 530a. For example, the cover layer 550a can include or can be made of glass or silicon nitride. For example, the radiating element 530a can include or can be made of a semiconductor material (such as silicon, silicon carbide, silicon germanium).

[0083] Figure 5b Shown with Figure 4b The emitter 520b may be a part of the semiconductor device according to FIG. 1 . The emitter 520b may include a substrate 510b, an interface layer 540b, and a radiation element 530b. Figure 4b In contrast, radiator 520b does not include a separate cover layer.Radiating element 530b may include a cover layer and may be attached to interface layer 540b.

[0084] Figure 5c Shown with Figure 4a The emitter 520c may be a part of the semiconductor device according to FIG. 1 . The emitter 520c may include a substrate 510c, an interface layer 540c and a radiation element 530c. Figure 4a In contrast, radiator 520c does not include a separate cover layer.Radiating element 530c may include a cover layer and may be attached to interface layer 540b.

[0085] Combination Figure 5a to Figure 5c The description of the emitters 520a, 520b, 520c also applies to the detectors.

[0086] Further details and aspects are mentioned in conjunction with the examples described above and / or below. The example shown in FIG. 5 may include one or more optional or additional features that correspond to one or more aspects mentioned in conjunction with the proposed concept, or to the above (e.g., FIGS. 1 to 4 ) and / or below (e.g., FIGS. 6 to 7 ). Figure 8 ) corresponds to one or more aspects mentioned in one or more examples described.

[0087] Figure 6a-6b A schematic cross-sectional view of an example of a semiconductor device 600a, 600b, for example a photoacoustic sensor 600a, 600b, such as a MEMS gas sensor 600a, 600b or a non-dispersive infrared sensor, is shown. The photoacoustic sensor 600a, 600b or the non-dispersive infrared sensor may be fabricated using wave level bonding.

[0088] Figure 6a The photoacoustic sensor 600a shown may include a Figure 3d The transmitter 620a and according to Figure 3d The detector 660a of the photoacoustic sensor 600a. The interface layer may include a thermal decoupling material (e.g., an insulating material) having a lower thermal conductivity than the thermal conductivity of the radiating element and the detecting element. In this way, the cross coupling between the emitter 620a and the detector 660a may be reduced. As shown by the arrows, the heat transfer from the emitter 620a to the substrate may be less than the heat transfer from the substrate to the detector 660a. Therefore, the photoacoustic sensor 600a may have a low thermal conductivity.

[0089] In addition, the photoacoustic sensor 600a may include a substrate 610a (e.g., a printed circuit board or a lead frame). A cover 694a may be arranged on the substrate 610a. The cover 694a may be configured to cover the emitter 620a and the detector 660a. In addition, the cover 694a may form a measurement cavity 696a. That is, the cover 694a may be configured to reflect electromagnetic waves radiated from the emitter 620a. The cover 694a may provide a housing for the emitter 620a and the detector 660a. The cover 694a may include an opening 692a, which is configured to provide fluid communication with the surrounding environment, for example, for allowing ambient gas and / or target gas to enter the measurement cavity 696a. For example, the opening 692a may be arranged in the top wall of the cover 694a (i.e., the wall facing the substrate 610a). Optionally or alternatively, the opening and / or another opening may be arranged in the side wall of the cover 694a.

[0090] The photoacoustic sensor 600a may also include a controller 698a, such as an integrated circuit, such as an ASIC (application specific integrated circuit). The controller 698a may be arranged inside or outside the measurement cavity 696a formed by the cover 694a. Figure 6a Controller 698a may receive a measurement signal from detector 660a and may process the measurement signal to identify at least one target gas based on the photoacoustic principle.

[0091] Figure 6b The MEMS gas sensor 600b shown may include a Figure 3a The transmitter 620b and according to Figure 3a The cover layer may include a thermal decoupling material (e.g., an insulating material) having a lower thermal conductivity than the thermal conductivity of the radiating element and the detecting element. In this way, cross coupling between the emitter 620a and the detector 660a may be reduced. As shown by the arrows, heat transfer from the emitter 620a via the substrate to the detector 660a may be increased by the cover layer. Therefore, the MEMS gas sensor 600b may have high thermal conductivity.

[0092] In addition, the photoacoustic sensor 600b may include a substrate 610b, a cover 694b, a measurement cavity 696b, an opening 692b, and a controller 698b, as shown in FIG. Figure 6a described.

[0093] The photoacoustic sensor 600a, 600b (e.g., MEMS gas sensor 600a, 600b) can be a subcomponent of a larger system (e.g., a photoacoustic spectrometer sensor or a non-dispersive infrared sensor in which the MEMS gas sensor 600a, 600b can be used as an infrared emitter). However, the MEMS gas sensor 600a, 600b can also be a separate or independent product. For example, the MEMS gas sensor 600a, 600b can be used as an independent multi-gas sensing unit.

[0094] The semiconductor devices 600a, 600b may provide a detector (e.g., a silicon microphone) packaged in a wafer-level bonding process under a well-defined gas sensing atmosphere (e.g., CO2 or vacuum). The semiconductor device may provide a non-dispersive infrared sensor packaged in a wafer-level bonding process. Typical photoacoustic sensors use silicon as a bottom interface and a top interface as a connection to the sensing volume. In contrast, the semiconductor devices 600a, 600b use different materials to allow the thermal conductivity to be adjusted to reduce cross coupling.

[0095] More details and aspects are mentioned in conjunction with the examples described above and / or below. The example shown in FIG6 may include one or more optional or additional features that correspond to one or more aspects mentioned in conjunction with the proposed concept, or to the above (e.g., FIGS. 1 to 5 ) and / or below (e.g., Figures 7 and 8 ) corresponds to one or more aspects mentioned in one or more examples described.

[0096] Figure 7 A block diagram of a method 700 for manufacturing a semiconductor device is shown. The method 700 includes forming 710 a radiation element and a detection element on a substrate, the radiation element including a radiation layer for radiating electromagnetic waves, and the detection element including a detection layer for detecting electromagnetic waves. The method 700 also includes forming 720 an interface layer on the radiation element or the detection element. The thermal conductivity of the radiation element and / or the detection element is different from the thermal conductivity of the interface layer. In addition, the method 700 includes attaching 730 the interface layer to another substrate. A semiconductor device or a portion of a semiconductor device, such as described above with reference to Figures 1 to 6, can be formed according to the method 700.

[0097] In an example, attaching the interface layer to another substrate may include a flip chip process. In this way, the interface layer can be manufactured as a cover layer on top of the radiating element / detecting element and can be arranged as an interface layer by flip chip mounting. For example, thermal MEMS (such as infrared heaters) can be packaged by wafer bonding using a cover wafer of glass or low thermal conductivity material. For example, the photoacoustic sensors 600a, 600b can be manufactured using wafer level bonding.

[0098] In an example, method 700 may further include forming an underfill layer using a back-end process. The thermal conductivity of the underfill layer is different from the thermal conductivity of the radiating element or the detecting element. In this way, the thermal conductivity of the emitter / detector may be adjusted using the back-end process. That is, the thermal conductivity may be adjusted after the front-end process is completed (e.g., after the glass is bonded to the silicon).

[0099] Further details and aspects are mentioned in conjunction with the examples described above and / or below. Figure 7 The illustrated examples may include one or more optional or additional features that correspond to one or more aspects mentioned in conjunction with the proposed concept, or to the above (e.g., FIGS. 1 to 6 ) and / or the following (e.g., Figure 8 ) corresponds to one or more aspects mentioned in one or more examples described.

[0100] Figure 8A block diagram of a method 800 for manufacturing a semiconductor device is shown. The method 800 includes forming 810 a radiation element and a detection element on a substrate, the radiation element including a radiation layer for radiating electromagnetic waves, and the detection element including a detection layer for detecting electromagnetic waves. The method 800 also includes forming 820 a covering layer on the radiation element or the detection element. The thermal conductivity of the radiation element and / or the detection element is different from the thermal conductivity of the covering layer. A semiconductor device or a portion of a semiconductor device, such as described above with reference to FIGS. 1 to 6, can be formed according to the method 800.

[0101] Further details and aspects are mentioned in connection with the examples described above. Figure 8 The examples shown may include one or more optional or additional features that correspond to one or more aspects mentioned in conjunction with the proposed concepts, or to the above (e.g., FIGS. 1 to 3). Figure 7 ) corresponds to one or more aspects mentioned in one or more examples described.

[0102] The aspects and features described with respect to a specific example among the aforementioned examples may also be combined with one or more further examples to replace the same or similar features of the further examples, or to additionally introduce these features into the further examples.

[0103] Examples may also be or relate to a (computer) program product including a program code, so that when the program product is executed on a computer, a processor or other programmable hardware component, one or more methods in the above method are performed. Therefore, the steps, operations or processes of the above different methods may also be performed by a programmed computer, a processor or other programmable hardware component. Examples may also encompass program storage devices, such as digital data storage media, which are machine-readable, processor-readable or computer-readable and encode and / or contain machine-executable, processor-executable or computer-executable programs and instructions. For example, a program storage device may include or may be a digital storage device, a magnetic storage medium (such as a disk and a tape), a hard drive or an optically readable digital data storage medium. Other examples may also include a computer, a processor, a control unit, a (field) programmable logic array ((F)PLA), a (field) programmable gate array ((F)PGA), a graphics processor unit (GPU), an application-specific integrated circuit (ASIC), an integrated circuit (IC) or a system on a chip (SoC) system programmed to perform the steps of the above method.

[0104] It should also be understood that the disclosure of several steps, processes, operations or functions disclosed in the specification or claims should not be interpreted as implying that these operations must rely on the described order, unless explicitly stated in individual cases or necessary for technical reasons. Therefore, the foregoing description does not limit the execution of several steps or functions to a certain order. In addition, in further examples, a single step, function, process or operation may include and / or be decomposed into several sub-steps, functions, processes or operations.

[0105] If some aspects of a device or system have been described, these aspects should also be understood as descriptions of the corresponding methods. For example, blocks, devices or functional aspects of a device or system may correspond to features of the corresponding methods, such as method steps. Therefore, various aspects of the description related to the method should also be understood as descriptions of corresponding blocks, corresponding elements, attributes or functional features of the corresponding device or corresponding system.

[0106] In the following, some examples of the proposed concept are presented:

[0107] An example (e.g., Example 1) relates to a semiconductor device, comprising: a radiation element and a detection element, the radiation element comprising a radiation layer for radiating electromagnetic waves, the detection element comprising a detection layer for detecting the electromagnetic waves; a substrate; and an interface layer, the interface layer being arranged between the radiation element and the substrate, or being arranged between the detection element and the substrate, wherein the thermal conductivity of the radiation element or the thermal conductivity of the detection element is different from the thermal conductivity of the interface layer.

[0108] Another example (e.g., Example 2) relates to the aforementioned example (e.g., Example 1) or any other example, and further includes: the thermal conductivity of the radiation element differs from the thermal conductivity of the interface layer by at least 10 times, or the thermal conductivity of the detection element differs from the thermal conductivity of the interface layer by at least 10 times.

[0109] Another example (eg, Example 3) relates to the preceding example (eg, one of Examples 1 or 2) or any other example, further including: the interface layer having a thermal conductivity less than 2 W / (m*K).

[0110] Another example (eg, Example 4) relates to the aforementioned example (eg, one of Examples 1 to 3) or any other example, further including: the interface layer includes glass or is made of glass.

[0111] Another example (eg, Example 5) relates to the preceding example (eg, one of Examples 1-4) or any other example, further comprising: the interface layer being directly attached to the substrate.

[0112] Another example (eg, Example 6) relates to the preceding example (eg, one of Examples 1 to 5) or any other example, further comprising: the radiation element or the detection element is electrically coupled to the substrate through a coupling element.

[0113] Another example (eg, Example 7) relates to the preceding example (eg, Example 6) or any other example, further comprising: the coupling element comprises at least one of a solder ball, a via, a conductive adhesive, and a wire bond.

[0114] Another example (eg, Example 8) relates to the preceding example (eg, one of Examples 1 to 7) or any other example, further comprising: the interface layer being directly attached to the radiating element or the detecting element.

[0115] Another example (e.g., Example 9) relates to the aforementioned example (e.g., one of Examples 1 to 8) or any other example, and further includes: a bottom filling layer, which is arranged between the radiation element and the substrate, or arranged between the detection element and the substrate.

[0116] Another example (eg, Example 10) relates to the preceding example (eg, Example 9) or any other example, further comprising: an underfill layer is disposed between the interface layer and the substrate.

[0117] Another example (eg, Example 11) relates to the preceding example (eg, Example 9) or any other example, further comprising: the interface layer is at least partially embedded in the underfill layer.

[0118] Another example (eg, Example 12) relates to the preceding example (eg, Example 9) or any other example, further comprising: a solder ball electrically coupling the radiation element or the detection element with the substrate, wherein the solder ball is partially embedded in the bottom fill layer.

[0119] Another example (eg, Example 13) relates to the preceding example (eg, Example 12) or any other example, further comprising: the solder ball extends along a lateral dimension of the interface layer.

[0120] Another example (eg, Example 14) relates to the preceding example (eg, one of Examples 1 to 13) or any other example, further including: the radiating element includes a film.

[0121] Another example (e.g., Example 15) relates to the aforementioned example (e.g., one of Examples 1 to 14) or any other example, and also includes: the detection element includes at least one of a pressure-sensitive transducer, a piezoelectric transducer, a capacitive sensor, a thermosensitive structure, a mechanical strain-sensitive structure, and a magnetic field-sensitive structure.

[0122] Another example (e.g., Example 16) relates to the aforementioned example (e.g., one of Examples 1 to 15) or any other example, and also includes: a covering layer, which is arranged above the radiation element or the detection element, and the covering layer is transparent to infrared light.

[0123] An example (e.g., Example 17) relates to a semiconductor device, comprising: a radiation element or a detection element, the radiation element comprising a radiation layer for radiating electromagnetic waves, the detection element comprising a detection layer for detecting electromagnetic waves; a substrate; and a covering layer, which is arranged above the radiation element or the detection element, wherein the thermal conductivity of the radiation element or the thermal conductivity of the detection element is different from the thermal conductivity of the covering layer.

[0124] One example (eg, Example 18) relates to a micro-electromechanical system (MEMS) gas sensor, comprising: a semiconductor device according to any of the preceding examples.

[0125] An example (e.g., Example 19) relates to a method comprising: forming a radiation element and a detection element on a substrate, the radiation element comprising a radiation layer for radiating electromagnetic waves, and the detection element comprising a detection layer for detecting electromagnetic waves; forming an interface layer on the radiation element or the detection element, wherein the thermal conductivity of the radiation element or the thermal conductivity of the detection element is different from the thermal conductivity of the interface layer; and attaching the interface layer to another substrate.

[0126] Another example (eg, Example 20) relates to the preceding example (eg, Example 19) or any other example, further comprising: attaching the interface layer to another substrate comprises a flip chip process.

[0127] Another example (e.g., Example 21) relates to the aforementioned example (e.g., one of Examples 19 or 14) or any other example, and further includes: forming a bottom filling layer through a back-end process, wherein the thermal conductivity of the bottom filling layer is different from the thermal conductivity of the radiation element or the detection element.

[0128] An example (e.g., Example 22) relates to a method, comprising: forming a radiation element and a detection element on a substrate, the radiation element comprising a radiation layer for radiating electromagnetic waves, and the detection element comprising a detection layer for detecting electromagnetic waves; and forming a covering layer on the radiation element or the detection element, wherein the thermal conductivity of the radiation element or the thermal conductivity of the detection element is different from the thermal conductivity of the covering layer.

[0129] The following claims are hereby incorporated into the detailed description, where each claim may stand alone as a separate example. It should also be noted that, although in the claims, a dependent claim refers to a specific combination with one or more other claims, other examples may also include a combination of a dependent claim with the subject matter of any other dependent or independent claim. Such combinations are explicitly proposed here, unless it is stated in individual cases that a specific combination is not intended. In addition, features of a claim should also be included in any other independent claim, even if the claim is not directly defined as being dependent on the other independent claim.

Claims

1. A semiconductor device (100a; 100b； 100c), including: A radiation element (130; 130') and a detection element (170; 170'), wherein the radiation element comprises a radiation layer (132) for radiating electromagnetic waves, and the detection element comprises a detection layer for detecting the electromagnetic waves; a substrate (110); and An interface layer (140; 180) is arranged between the radiation element (130) and the substrate (110), or between the detection element (170) and the substrate (110), wherein the thermal conductivity of the radiation element (130) or the thermal conductivity of the detection element (170) is different from the thermal conductivity of the interface layer (140; 180).

2. The semiconductor device (100a; 100b; 100c) according to claim 1, wherein The thermal conductivity of the radiation element (130) or the thermal conductivity of the detection element (170) differs from the thermal conductivity of the interface layer (140; 180) by at least 10 times.

3. The semiconductor device (100a; 100b; 100c) according to any one of the preceding claims, wherein The interface layer (140; 180) has a thermal conductivity of less than 2 W / (m*K).

4. The semiconductor device (100a; 100b; 100c) according to any one of the preceding claims, wherein The interface layer (140; 180) comprises glass or is made of glass.

5. The semiconductor device (100a; 100b; 100c) according to any one of the preceding claims, wherein The interface layer (140; 180) is directly attached to the substrate (110).

6. The semiconductor device (100a; 100b; 100c) according to any one of the preceding claims, wherein The interface layer includes a cavity (144), and wherein The radiation layer (132) faces the cavity (144).

7. The semiconductor device (100a; 100b; 100c) according to any one of the preceding claims, wherein The radiation element (130) or the detection element (170) is electrically coupled to the substrate (110) via a coupling element (302a; 302b; 302c; 302d).

8. The semiconductor device (100a; 100b; 100c) according to claim 7, wherein The coupling element (302a; 302b; 302c; 302d) includes at least one of a solder ball, a via, a conductive adhesive, and a wire bond.

9. The semiconductor device (100a; 100b; 100c) according to any one of the preceding claims, wherein The interface layer (140; 180) is directly attached to the radiating element (130) or the detecting element (170).

10. The semiconductor device (100a; 100b) according to any one of the preceding claims 100b； 100c), also includes: Bottom filling layer (408a; 408b), the bottom filling layer is arranged between the radiation element (130) and the substrate (110), or is arranged between the detection element (170) and the substrate (110).

11. The semiconductor device according to any one of the preceding claims, further comprising: Covering layer (350a; 350b; 356c; 356d), the covering layer is arranged above the radiation element (130) or the detection element (170), and the covering layer (350a; 350b; 356c; 356d) is transparent to infrared light.

12. A semiconductor device comprising: A radiation element (230) or a detection element (270), wherein the radiation element comprises a radiation layer (232) for radiating electromagnetic waves, and the detection element comprises a detection layer (272) for detecting the electromagnetic waves; A substrate (210); as well as A covering layer (250, 290) is arranged above the radiation element (230) or the detection element (270), wherein the thermal conductivity of the radiation element (230) or the thermal conductivity of the detection element (270) is different from the thermal conductivity of the covering layer (250, 290).

13. A micro-electromechanical system (MEMS) gas sensor, comprising: Semiconductor device according to any one of the preceding claims.

14. A method comprising: forming a radiation element and a detection element on a substrate, wherein the radiation element comprises a radiation layer for radiating electromagnetic waves, and the detection element comprises a detection layer for detecting the electromagnetic waves; forming an interface layer on the radiation element or the detection element, wherein the thermal conductivity of the radiation element or the detection element is different from the thermal conductivity of the interface layer; and The interface layer is attached to another substrate.

15. A method comprising: forming a radiation element and a detection element on a substrate, wherein the radiation element comprises a radiation layer for radiating electromagnetic waves, and the detection element comprises a detection layer for detecting the electromagnetic waves; and A covering layer is formed on the radiation element or the detection element, wherein the thermal conductivity of the radiation element or the detection element is different from the thermal conductivity of the covering layer.

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