Under-beam device for electron beam irradiation of wastewater
By setting up a spoiler in the electron beam irradiation reaction pipeline and using eddy current to absorb and attenuate electron energy, the problem of low energy utilization in electron beam irradiation technology is solved, achieving more efficient wastewater treatment and cost savings.
Patent Information
- Application Number
- CN202311282638.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-09-28
- Publication Date
- 2025-03-28
AI Technical Summary
The existing electron beam irradiation technology has a severe attenuation of electron energy in wastewater treatment, resulting in low energy utilization, waste of resources and high costs.
A spoiler is provided in the electron beam irradiation reaction pipeline, and the electron beam radiator irradiates the eddy current behind the spoiler, and uses the slower flow layer to absorb the attenuated electron energy.
It improves the energy utilization rate of electronic irradiation, reduces resource waste and costs, and achieves more efficient sewage treatment.
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Figure CN119707019A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of sewage treatment technology equipment, and in particular to a beam-under-irradiation device for electron beam irradiation of wastewater. Background Art
[0002] As the demands of human production activities become increasingly diverse, the pollutants in discharged sewage become more complex. Traditional sewage treatment methods have problems such as incomplete purification and low treatment efficiency. Electron beam sewage treatment methods have emerged as a new method of sewage treatment. Electron beam irradiation technology uses accelerated electron beams to bombard or irradiate the treated object, causing physical, chemical and biological reactions that are difficult to induce by conventional methods, thereby achieving the purpose of optimizing product quality, improving product performance, purifying substances, etc.
[0003] Sewage treatment uses accelerated electron beams to irradiate sewage, causing pollutants in the water to decompose or degrade, and harmful microorganisms to denature, so as to achieve the purpose of disinfecting and purifying the wastewater.
[0004] However, when electron beam irradiation technology is used for sewage treatment in related technologies, after the electron beam is incident on the wastewater, the electron energy decays sharply after exceeding a certain incident distance, and the electron energy in the attenuation section is difficult to be absorbed, and is eventually discarded or wasted on heating of the flow channel bottom plate. The electron beam irradiation energy utilization rate is low. Since electron beam irradiation equipment is expensive, how to improve the electron beam irradiation energy utilization rate is an important way to achieve cost savings. Summary of the invention
[0005] The technical problem to be solved by the present invention is that, in view of the defects and shortcomings of the prior art, a down-beam device for electron beam irradiation of waste water is provided, wherein a spoiler is arranged in the irradiation reaction pipeline, and the electron beam radiator irradiates the vortex on the rear side of the spoiler. The flow velocity of the lower layer of water in the vortex is slow, so that the attenuated electron energy can be absorbed, thereby improving the energy utilization rate of electron irradiation and saving costs.
[0006] The beam-down device for electron beam irradiation of wastewater according to an embodiment of the present invention comprises an irradiation reaction pipe and an electron beam radiator, wherein the irradiation reaction pipe has a relative water inlet and a water outlet and the top wall of the irradiation reaction pipe has an irradiation window, the electron beam radiator is placed above the irradiation reaction pipe and irradiates the inside of the irradiation reaction pipe through the irradiation window, a plurality of spoilers are vertically arranged and spaced apart along the width direction of the irradiation reaction pipe are provided on the bottom wall of the irradiation reaction pipe, the spoilers are spaced apart from the top wall of the irradiation reaction pipe, and the irradiation window is located on the side of the spoiler away from the water inlet and adjacent to the spoiler.
[0007] In the electron beam irradiation wastewater device of the embodiment of the present invention, a spoiler is provided on the bottom wall of the irradiation reaction pipe, and the spoiler is separated from the top wall of the irradiation reaction pipe, and an irradiation window is provided on the top wall of the irradiation reaction pipe immediately behind the spoiler, and the electron beam radiator irradiates the irradiation reaction pipe through the irradiation window, thereby, the setting of the spoiler can form a vortex on the rear side thereof, thereby reducing the water flow velocity of the downstream layer of the water film, and the electron beam radiator irradiates the vortex on the rear side of the spoiler through the irradiation window, and the attenuated electron energy can be absorbed by the water layer of the downstream layer with a slower flow velocity, thereby improving the energy utilization rate of electron irradiation and saving costs.
[0008] In some embodiments, the electron beam irradiation wastewater under-beam device further comprises a water supply rectifier, wherein the water supply rectifier comprises an inlet for receiving wastewater and an outlet for discharging wastewater, wherein the outlet is connected to the water inlet.
[0009] In some embodiments, the water supply rectifier includes a flared section and a horizontal flow section, the horizontal flow section has the inlet, the flared section is connected to a side of the horizontal flow section facing the electron irradiation pipe, and the width of the flared section gradually increases in a direction away from the horizontal flow section, and the flared section has the outlet at one end away from the horizontal flow section.
[0010] In some embodiments, the expansion section includes a first side plate and a second side plate that are opposite to each other in a width direction thereof, and the first side plate and the second side plate can swing toward a direction approaching or moving away from each other.
[0011] In some embodiments, the height dimension of the flared section gradually decreases in a direction away from the flat flow section.
[0012] In some embodiments, the electron beam irradiation device for wastewater further comprises a catalytic reaction device, which is connected to the water inlet and is used to mix the wastewater and the powdered catalyst.
[0013] Alternatively, the catalytic reaction device is connected to the water outlet and is used to mix wastewater and granular catalyst.
[0014] In some embodiments, the catalytic reaction device is connected to the inlet end of the water supply rectifier, and the beam-under-device for electron beam irradiating wastewater also includes a sedimentation tank, the water outlet is connected to the sedimentation tank, and a catalyst recovery port is provided at the bottom of the sedimentation tank.
[0015] In some embodiments, the catalytic reaction device is connected to the water outlet and is spaced apart from the irradiation window by a distance S1, and then the following is satisfied: 0.5 cm ≤ S1 ≤ 15 cm.
[0016] In some embodiments, a filter screen sintered with a catalyst is provided in the irradiation reaction pipe, and the filter screen is located on a side of the irradiation window away from the spoiler.
[0017] In some embodiments, the spacing distance between the filter and the irradiation window is S2, which satisfies: 0.5cm≤S2≤15cm. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 A schematic structural diagram of a beam-under-electron-beam device for electron beam irradiation of wastewater according to an embodiment of the present invention.
[0019] Figure 2 A schematic structural diagram of a beam-under-electron-beam device for electron beam irradiation of wastewater according to another embodiment of the present invention.
[0020] Figure 3 A schematic structural diagram of a beam-under-electron-beam device for electron beam irradiation of wastewater according to another embodiment of the present invention.
[0021] Figure 4 A top view of a water supply rectifier of a beam-under-electron beam irradiation device for wastewater according to an embodiment of the present invention.
[0022] Figure 5 A side view of a water supply rectifier for an under-beam device for electron beam irradiation of wastewater according to an embodiment of the present invention, wherein the expansion port is a flat flow structure.
[0023] Figure 6 A side view of a water supply rectifier for an electron beam under-beam device for irradiating wastewater according to an embodiment of the present invention, wherein the expansion port is a jet structure.
[0024] Reference numerals:
[0025] Irradiation reaction pipeline 1, filter screen 11, spoiler 12, electron beam radiator 2, water supply rectifier 3, horizontal flow section 31, expansion section 32, catalytic reaction device 4, sedimentation tank 5, catalyst recovery port 51, water outlet pipe 52. DETAILED DESCRIPTION
[0026] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to be used to explain the present invention, but should not be understood as limiting the present invention.
[0027] like Figure 2 As shown, the electron beam device for electron beam irradiation of wastewater according to an embodiment of the present invention includes an irradiation reaction pipeline 1 and an electron beam radiator 2.
[0028] Specifically, Figure 1-Figure 3As shown, the irradiation reaction pipe 1 has a relative water inlet and outlet and the top wall of the irradiation reaction pipe 1 has an irradiation window, the electron beam radiator 2 is placed above the irradiation reaction pipe 1 and irradiates the inside of the irradiation reaction pipe 1 through the irradiation window, and a plurality of spoilers 12 are vertically arranged and spaced apart along the width direction of the irradiation reaction pipe 1 on the bottom wall of the irradiation reaction pipe 1, the spoilers 12 are spaced apart from the top wall of the irradiation reaction pipe 1, and the irradiation window is located on the side of the spoiler 12 away from the water inlet and adjacent to the spoiler 12.
[0029] It should be noted that, in the prior art, when performing electron beam irradiation, the water film is usually controlled to flow through the irradiation reaction tube section at a uniform speed. After the electron beam is incident on the wastewater, the absorbed dose is relatively uniform within a certain distance on its surface. After exceeding a certain incident distance, the electron energy decays sharply and it is difficult to penetrate the downstream layer of the water film, resulting in this part of the energy being wasted. In the present application, a spoiler 12 is provided, and a vortex can be formed on the rear side of the spoiler 12, thereby reducing the water flow velocity of the downstream layer of the water film. The electron beam radiator 2 is irradiated at the vortex on the rear side of the spoiler 12 through the irradiation window. The attenuated electron energy can be absorbed by the water layer of the downstream layer with a slower flow velocity, thereby improving the energy utilization rate of electron irradiation and saving costs.
[0030] In the electron beam irradiation wastewater device of the embodiment of the present invention, a spoiler 12 is provided on the bottom wall of the irradiation reaction pipe 1, and the spoiler 12 is separated from the top wall of the irradiation reaction pipe 1, and an irradiation window is provided on the top wall of the irradiation reaction pipe 1 immediately behind the spoiler 12, and the electron beam radiator 2 irradiates the irradiation reaction pipe 1 through the irradiation window, thereby, the setting of the spoiler 12 can form a vortex on the rear side thereof, thereby reducing the water flow velocity of the downstream layer of the water film, and the electron beam radiator 2 irradiates the vortex on the rear side of the spoiler 12 through the irradiation window, and the attenuated electron energy can be absorbed by the water layer of the downstream layer with a slower flow velocity, thereby improving the energy utilization rate of electron irradiation and saving costs.
[0031] Optionally, the height and spacing of the spoiler 12 are adjustable, which can be determined according to the requirements of the irradiation reaction.
[0032] Preferably, if Figure 1-Figure 3 As shown, the electron beam irradiation wastewater under-beam device also includes a water supply rectifier 3, which includes an inlet for receiving wastewater and an outlet for discharging wastewater, and the outlet is connected to the water inlet. In other words, the external sewage is first rectified by the water supply rectifier 3 and then transported to the irradiation reaction pipeline 1. The water supply rectifier 3 can rectify and transport the sewage according to the requirements of the irradiation reaction on the water flow rate and the water film thickness, so that the irradiation reaction can achieve the best effect.
[0033] Alternatively, if Figure 4 and Figure 5As shown, the water supply rectifier 3 includes a flaring section 32 and a flat flow section 31, the flat flow section 31 has an inlet, the flaring section 32 is connected to the side of the flat flow section 31 facing the electron irradiation pipeline, and the width of the flaring section 32 gradually increases in the direction away from the flat flow section 31, and the end of the flaring section 32 away from the flat flow section 31 has an outlet, and the flaring section 32 includes a first side plate and a second side plate opposite to each other in the width direction, and the first side plate and the second side plate can swing in the direction of approaching or moving away from each other. Therefore, the swingable first side plate and the second side plate can be selected to shrink the width of the outlet or expand outward to increase the width of the outlet according to the size of the beam spot diameter, so as to finally match the size of the actual beam spot to obtain a greater energy utilization rate.
[0034] Preferably, the pitch angle of the water supply rectifier 3 is adjustable so that it can be adaptively assembled on the irradiation reaction pipeline 1 with different inclination angles.
[0035] Furthermore, the water supply rectifier 3 of the present application can also control the water flow rate according to the irradiation reaction requirements, for example, Figure 6 As shown, the height dimension of the expansion section 32 gradually decreases in the direction away from the flat flow section 31, and the gradually contracting expansion section 32 can increase the injection pressure at the outlet and increase the sewage flow rate.
[0036] Furthermore, in the prior art, in addition to using electron irradiation to treat sewage, advanced oxidation technologies such as Fenton, or electro-Fenton, and electrocatalysis are also often used in the field of sewage treatment. However, the chemical Fenton method requires the addition of reagents, which causes secondary pollution problems such as subsequent iron salts and sludge. Electro-Fenton or electrocatalytic technology generally uses a phase-separated catalyst, which can reduce secondary pollution such as iron salts and sludge, but it also has problems such as high energy consumption, long degradation time, and narrow scope of application.
[0037] Based on the above problems, the inventors of the present application have discovered through research that the synergistic effect of electron irradiation and catalytic technology can ensure the degradation effect while realizing the feasibility of catalyst loading and recovery, thereby solving the secondary pollution problem caused by the use of catalysts.
[0038] Specifically, Figure 1-Figure 3 As shown, the electron beam irradiation device for wastewater of the present application also includes a catalytic reaction device 4, which is connected to the water inlet and used to mix wastewater and powdered catalyst, or the catalytic reaction device 4 is connected to the water outlet and used to mix wastewater and granular catalyst.
[0039] In other words, when the catalyst has different forms, the connection position of the catalytic reaction device 4 is also different. Figure 1As shown, the catalyst is in powder form. The catalyst can be mixed with sewage first and then enter the irradiation reaction pipeline 1 through the water supply rectifier 3. The powdered catalyst can be fully mixed in the sewage and flow with the sewage. The active ions generated by electron irradiation can directly cooperate with the catalyst to perform degradation reaction, and the decontamination effect is good.
[0040] As for the granular catalyst, since the granular catalyst cannot flow with the sewage, it is necessary to connect the catalytic reaction device 4 to the water outlet (such as Figure 3 As shown in FIG. 1 , the active ions generated by electron irradiation flow with the sewage for a distance and reach the catalytic reaction device 4, and then synergistically degrade with the catalyst. Specifically, the location of the catalytic reaction device 4 can be reasonably selected according to the form of the catalyst.
[0041] Optionally, the catalytic reaction device 4 connected to the water outlet may be a catalytic reaction tank, a mesh box type or a cage type catalytic reactor.
[0042] Furthermore, if Figure 1 As shown, the catalytic reaction device 4 is connected to the inlet end of the water supply rectifier 3, and the beam device for electron beam irradiation wastewater also includes a sedimentation tank 5, the outlet is connected to the sedimentation tank 5, and a catalyst recovery port 51 is provided at the bottom of the sedimentation tank 5. That is, the sewage and the catalyst are mixed and transported to the irradiation reaction pipeline 1 through the water supply rectifier 3, and the sewage after the degradation reaction is passed into the sedimentation tank for standing, and the catalyst will sink to the bottom of the sedimentation tank 5 and finally be discharged from the catalyst recovery port 51, so as to realize the recycling of the catalyst, and the upper clear water flows out from the outlet pipe 52.
[0043] Optionally, the recovery of the powdered catalyst is not limited to the precipitation in the sedimentation tank 5. For example, a high-efficiency membrane filtration method (such as a ceramic membrane) can also be used to achieve catalyst recovery and online circulation, thereby reducing manpower or maintenance costs during operation.
[0044] Furthermore, the configuration of the catalytic reaction device 4 is not limited to the above two situations. Figure 2 As shown, the irradiation reaction pipeline 1 can be lengthened, and then a filter screen 11 sintered with a catalyst (which can be understood as a "channel catalytic reactor") is arranged in the irradiation reaction pipeline 1, and the filter screen 11 is located on the side of the irradiation window away from the spoiler 12. As a result, the active ions generated by electron irradiation can synergistically degrade the sewage when flowing through the filter screen 11 with the sewage.
[0045] Optionally, the mesh diameter of the filter screen 11 is 20-500 microns, and the catalyst type is a single-atom catalyst of Fe / Mn / Co or a metal oxide catalyst.
[0046] In addition, since radiation absorption and catalytic reaction have different requirements for water flow and water volume, in addition to the initial water supply rectifier 3 serving the irradiation, the stainless steel mesh for sintering the catalyst, the reaction cage containing the catalyst, and the reaction tank also have the function of rectifying or slowing down the flow rate and increasing the reaction time.
[0047] Furthermore, the irradiation reaction pipeline 1 can be coordinated with the water supply rectifier 3 to adjust the water flow velocity in layers / segments in the horizontal and vertical directions. Specifically, the water flow velocity can be adjusted in the horizontal direction by adjusting the opening angle of the expansion section 32 of the water supply rectifier 3, and the control means in the vertical direction is to set spoilers 12 of different sizes at the bottom of the flow channel.
[0048] Preferably, the catalytic reaction device 4 is connected to the water outlet and the distance between it and the irradiation window is S1, which satisfies: 0.5cm≤S1≤15cm; the distance between the filter screen 11 and the irradiation window is S2, which satisfies: 0.5cm≤S2≤15cm. It should be noted that in order to ensure that electron irradiation and catalyst can be synergistically degraded, it is necessary to make the active ions generated by electron irradiation meet the catalyst in an active state. The inventors have found that the active ions generated by the existing electron beam irradiator 2 can usually survive a flow distance between 0.5cm and 15cm. Therefore, when the distance between the loading position of the catalyst and the irradiation area is between 0.5cm and 15cm, the synergistic degradation of the catalyst and the active ions can be satisfied. Specifically, the loading position of the catalyst should be determined according to the survival time of the active ions in actual applications and combined with the water flow speed to achieve the best operating effect.
[0049] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.
[0050] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.
[0051] In the present invention, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral one; it can be a mechanical connection, an electrical connection, or communication with each other; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.
[0052] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.
[0053] In the present invention, the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.
[0054] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.
Claims
1. A beam-under-irradiation device for electron beam irradiation of wastewater, characterized in that: The invention comprises an irradiation reaction pipe and an electron beam radiator, wherein the irradiation reaction pipe has a relative water inlet and a water outlet and the top wall of the irradiation reaction pipe has an irradiation window, the electron beam radiator is placed above the irradiation reaction pipe and irradiates the inside of the irradiation reaction pipe through the irradiation window, a plurality of spoilers are arranged vertically and spaced apart along the width direction of the irradiation reaction pipe on the bottom wall of the irradiation reaction pipe, the spoilers are spaced apart from the top wall of the irradiation reaction pipe, and the irradiation window is located on the side of the spoiler away from the water inlet and adjacent to the spoiler.
2. The electron beam irradiation device for wastewater according to claim 1, characterized in that: It also includes a water supply rectifier, which includes an inlet for receiving waste water and an outlet for discharging waste water, and the outlet is connected to the water inlet.
3. The electron beam irradiation device for wastewater according to claim 2, characterized in that: The water supply rectifier includes a flared section and a horizontal flow section, the horizontal flow section has the inlet, the flared section is connected to a side of the horizontal flow section facing the electron irradiation pipeline, and the width of the flared section gradually increases in a direction away from the horizontal flow section, and the flared section has the outlet at one end away from the horizontal flow section.
4. The electron beam irradiation device for wastewater according to claim 3, characterized in that: The expansion section includes a first side plate and a second side plate that are opposite to each other in a width direction thereof, and the first side plate and the second side plate can swing toward directions approaching or moving away from each other.
5. The electron beam irradiation device for wastewater according to claim 3, characterized in that: The height dimension of the expansion section gradually decreases in a direction away from the advection section.
6. The electron beam irradiation device for wastewater according to claim 2, characterized in that: It also includes a catalytic reaction device, which is connected to the water inlet and is used to mix wastewater and powdered catalyst. Alternatively, the catalytic reaction device is connected to the water outlet and is used to mix wastewater and granular catalyst.
7. The electron beam irradiation device for wastewater according to claim 6, characterized in that: The catalytic reaction device is connected to the inlet end of the water supply rectifier, and the under-beam device for electron beam irradiation of wastewater also includes a sedimentation tank, the water outlet is connected to the sedimentation tank, and a catalyst recovery port is provided at the bottom of the sedimentation tank.
8. The electron beam irradiation device for wastewater according to claim 6, characterized in that: The catalytic reaction device is connected to the water outlet and is spaced apart from the irradiation window by a distance S1, which satisfies the following: 0.5 cm ≤ S1 ≤ 15 cm.
9. The electron beam irradiation device for wastewater according to claim 1, characterized in that: A filter screen sintered with a catalyst is arranged in the irradiation reaction pipe, and the filter screen is located at a side of the irradiation window away from the spoiler.
10. The electron beam irradiation device for wastewater according to claim 9, characterized in that: The spacing distance between the filter and the irradiation window is S2, which satisfies: 0.5cm≤S2≤15cm.
Citation Information
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Under-beam device for electron beam irradiation of wastewater and sewage treatment process
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