A laser-assisted glow plasma magnetron sputtering device and method

Abstract

The present invention relates to the technical field of target sputtering, and particularly relates to a laser-assisted glow plasma magnetron sputtering device and method. The target is in the shape of a hollow cylinder and is horizontally sleeved on a target support. The base frame is a transmission shaft arranged along the width direction of the sputtering chamber. The substrate is conveyed along multiple groups of transmission shafts. A magnet assembly is provided at the inner top position of the target support to form a glow plasma region outside the target. The laser beam emitted by the laser irradiation assembly irradiates the mirror assembly, and the mirror assembly rotates in different directions so that the laser beam is reflected towards the glow plasma region to achieve collaborative sputtering coating. The laser beam interacts with the glow plasma or the sputtered target atoms to achieve different forms of coating effects. The coupling of the laser and the magnetic field can reduce the sputtering voltage, reduce the temperature of the substrate, reduce the damage of sputtered ions to the substrate film layer, improve the battery efficiency, and improve the film formation quality.

Description

Technical Field

[0001] The present invention relates to the technical field of target sputtering, and in particular to a laser-assisted glow plasma magnetron sputtering device and method. Background Art

[0002] In PVD (Physical Vapor Deposition) equipment, a glow plasma is formed near the target by a magnetron sputtering cathode to sputter the target and deposit a film on a substrate. It is applicable to various semiconductor lamination industries such as the HJT (heterojunction solar cell) industry, LOW-E (low-emissivity coated glass) industry, and perovskite solar thin film battery industry. For existing magnetron sputtering devices and methods, such as the magnetron sputtering coating machine disclosed in Chinese patent document CN104805410B, it includes a wafer loading chamber, a coating chamber, a transition chamber, a wafer unloading chamber, and a substrate holder for carrying coating substrates. Each coating chamber respectively performs traditional magnetron sputtering coating on the substrates on the substrate holder. However, since the microcrystalline film layer is relatively fragile and the sputtering energy is high, it is easy to damage the film layer on the substrate. After the film layer is damaged, it affects the battery efficiency and the efficiency will decrease. And relatively low-temperature sputtering often easily brings problems such as poor film layer density and reduced film formation quality. For example, in perovskite coating, low-temperature sputtering is required, and the temperature generally needs to be lower than 75 °C to avoid damaging the film layer. Therefore, there is still a lack of a method and device that can solve the problems of low-temperature magnetron sputtering coating and good film formation density. Summary of the Invention

[0003] In view of this, the purpose of the present invention is to provide a laser-assisted glow plasma magnetron sputtering device and method to solve the problems in the existing magnetron sputtering coating devices and methods that the film layer on the substrate is easily damaged under the traditional coating method, and low-temperature coating easily leads to a decrease in film formation quality.

[0004] Based on the above purpose, the present invention provides a laser-assisted glow plasma magnetron sputtering device, which includes a sputtering chamber. Inside the sputtering chamber, there is a target holder for placing a target, and a substrate holder for placing a substrate:

[0005] The target holder is arranged along the width direction inside the sputtering chamber. The target is in the shape of a hollow cylinder and is horizontally sleeved on the target holder. Inside the target holder, there is a magnet assembly for forming a glow plasma region outside the target;

[0006] The substrate holder is a transmission shaft arranged along the width direction inside the sputtering chamber. The transmission shafts are arranged at intervals along the length direction inside the sputtering chamber. The substrate includes a flattened substrate and a coating layer to be coated attached to the substrate;

[0007] A laser irradiation component is provided on the sputtering chamber, and a mirror component is movably provided on the inner wall of the sputtering chamber. The laser beam emitted by the laser irradiation component irradiates the mirror component, and the mirror component rotates in different directions to reflect the laser beam towards the glow plasma region, thereby realizing collaborative sputtering coating.

[0008] Preferably, a fixing groove is provided on the outer wall of the sputtering chamber. The laser irradiation component includes a linear laser generator. A pressing plate for fixing the linear laser generator is provided in the fixing groove, and a quartz glass is provided at the light-emitting end of the linear laser generator.

[0009] Preferably, a plurality of vertical partition plates are spaced in the sputtering chamber to divide the sputtering chamber into a plurality of independent sputtering areas. The target support in at least one sputtering area is located below the base frame, and the target support in at least one sputtering area is located above the base frame. The layers to be coated are respectively attached to the upper and lower surfaces of the substrate.

[0010] Preferably, the mirror component includes a mirror body and a rotating shaft connected to the mirror body. Both ends of the rotating shaft are rotatably connected to the side wall of the sputtering chamber, and an elastic member is provided at the rotating connection. One end of the mirror body is connected with a pulling rope. A guide wheel group is provided in the side wall of the sputtering chamber, and a wire take-up cylinder is rotatably connected in the side wall of the sputtering chamber. One end of the pulling rope is guided through the guide wheel group and wound around the wire take-up cylinder. By rotating the wire take-up cylinder, the pulling rope is pulled to control the rotation angle of the mirror body.

[0011] Preferably, the wire take-up cylinder is located at the middle position between adjacent sputtering areas to simultaneously wind the pulling ropes of adjacent sputtering areas. Adjusting shafts are respectively rotatably connected to both sides of the wire take-up cylinder, and limiting bumps are connected to the outside of the adjusting shafts. By rotating the adjusting shafts separately, the limiting bumps press the pulling ropes to different degrees to separately adjust the rotation angles of the mirror bodies in each sputtering area.

[0012] Preferably, an outer cover frame covering the mirror component is fixedly provided on the vertical partition plate, and a through groove for the laser beam to enter and exit is provided on the outer cover frame.

[0013] Preferably, a blocking cloth is covered on the back surface of the mirror body. One end of the blocking cloth is fixedly connected to the mirror body, and the other end is connected to the pulling rope. By winding the pulling rope with the wire take-up cylinder until the mirror body rotates 180°, the back surface of the mirror body covered by the blocking cloth faces the laser beam.

[0014] The present invention also provides a method for laser collaborative glow plasma magnetron sputtering, including the following steps:

[0015] The target is in the shape of a hollow cylinder and is horizontally sleeved on the target support. The base frame is a transmission shaft arranged along the width direction in the sputtering chamber, and the substrate is conveyed along multiple groups of transmission shafts;

[0016] A magnet assembly is provided at the top position of the target bracket, which is used to form a glow plasma area outside the target material. The laser beam emitted by the laser irradiation assembly is irradiated to the reflector assembly, and the reflector assembly is rotated in different directions to reflect the laser beam to the glow plasma area, thereby realizing coordinated sputtering coating.

[0017] Preferably, a plurality of vertical partitions are provided in the sputtering chamber to divide the sputtering chamber into a plurality of independent sputtering zones. A take-up drum is provided in the middle of adjacent sputtering zones to wind up a pull rope. The pull rope is transmission-connected to the reflector assemblies of adjacent sputtering zones to uniformly adjust the rotation angles of the reflector assemblies of adjacent sputtering zones. Adjustment shafts are rotationally connected to the two sides of the take-up drum respectively, and a limiting protrusion is connected to the outer side of the adjustment shaft. By rotating the adjustment shaft alone, the limiting protrusion can press the pull rope to different degrees, thereby driving the pull rope to be retracted and released, so as to fine-tune the rotation angle of the reflector body in each sputtering zone individually.

[0018] Preferably, the outer cover of the reflector assembly is provided with an outer cover frame, which is only provided with a through groove for the laser beam to enter and emit, and the back of the reflector body is covered with a blocking cloth, and the pull rope is rolled up by the take-up drum until the reflector body is rotated 180°, so that the back of the reflector body initially covered by the blocking cloth faces the laser beam and reflects the laser beam.

[0019] The beneficial effects of the present invention are as follows: the target bracket is arranged along the width direction of the sputtering chamber, the target material is in the shape of a hollow cylinder and is laterally sleeved on the target bracket, the base bracket is a transmission shaft arranged along the width direction of the sputtering chamber, the substrate is transmitted along multiple groups of transmission shafts, a magnet assembly is arranged at the top position in the target bracket, which is used to form a glow plasma area outside the target material, the laser beam emitted by the laser irradiation assembly is irradiated to the reflector assembly, and the reflector assembly is rotated in different directions to make the laser beam reflect to the glow plasma area, so as to achieve coordinated sputtering coating, and the laser beam is introduced into the glow plasma area or the sputtering path, and the laser beam and the glow plasma or the sputtered target atoms influence and interact with each other, so as to achieve different forms of coating effects, and the laser is coupled with the magnetic field to enhance the overall magnetic field, so as to reduce the sputtering voltage, reduce the temperature of the substrate, reduce the damage of the sputtering ions to the substrate film layer, improve the battery efficiency, increase the coating rate, and increase the density of the film layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions in the present invention or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings in the following description are only for the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1Schematic structural diagram of a sputtering chamber without a drawstring, a wire winding cylinder, and an outer cover frame in the present invention;

[0022] Figure 2 Of the present invention Figure 1 Enlarged schematic diagram at position A;

[0023] Figure 3 Schematic structural diagram of a target support in the present invention;

[0024] Figure 4 Top view structural diagram of a sputtering chamber in the present invention;

[0025] Figure 5 Schematic structural diagram of a sputtering chamber with a drawstring, a wire winding cylinder, and an outer cover frame in the present invention;

[0026] Figure 6 Schematic structural diagram of a drawstring, a guide pulley group, and a wire winding cylinder in the present invention;

[0027] Figure 7 Of the present invention Figure 5 Enlarged schematic diagram at position B;

[0028] Figure 8 Of the present invention Figure 5 Enlarged schematic diagram at position C;

[0029] Figure 9 Of the present invention Figure 5 Enlarged schematic diagram at position D;

[0030] Figure 10 Schematic structural diagram when the back surface of the mirror body initially covered by a baffle cloth faces the laser beam in the present invention;

[0031] Figure 11 Schematic structural diagram when the target material sputters downward in the present invention;

[0032] Figure 12 Side view structural diagram of the target material sputtering downward in the present invention;

[0033] Figure 13 Bottom view structural diagram of the target material sputtering downward in the present invention.

[0034] Labels in the figure are:

[0035] 100, Sputtering chamber; 101, Vacuum assembly; 102, Fixed groove; 103, Vertical partition; 200, Target; 201, Glow plasma region; 300, Target holder; 400, Substrate; 500, Base frame; 1, Magnet assembly; 2, Laser irradiation assembly; 20, Laser beam; 21, Linear laser generator; 22, Pressing plate; 23, Quartz glass; 3, Mirror assembly; 31, Mirror body; 32, Rotating shaft; 4, Pull rope; 5, Guide pulley set; 6, Wire take-up reel; 7, Adjusting shaft; 8, Limit lug; 9, Outer cover frame; 10, Through slot; 11, Cloth stopper. Detailed implementation mode

[0036] To make the objectives, technical solutions and advantages of the present invention clearer and more understandable, the present invention will be further described in detail below in conjunction with specific embodiments.

[0037] It should be noted that unless otherwise defined, the technical terms or scientific terms used in the present invention should have the ordinary meanings understood by those with ordinary skills in the field to which the present invention belongs. The "first", "second" and similar terms used in the present invention do not indicate any order, quantity or importance, but are only used to distinguish different components. The terms such as "including" or "comprising" mean that the elements or objects appearing before this word cover the elements or objects listed after this word and their equivalents, without excluding other elements or objects. The terms such as "connected" or "linked" are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The terms such as "upper", "lower", "left" and "right" are only used to represent relative position relationships. When the absolute position of the object being described changes, the relative position relationship may also change accordingly.

[0038] A laser-assisted glow plasma magnetron sputtering device, as Figure 1 、 Figure 2 、 Figure 3 、 Figure 4As shown, it includes a sputtering chamber 100. Inside the sputtering chamber 100, there is a target support 300 for placing a target 200, and a substrate holder 500 for placing a substrate 400. The target support 300 is arranged along the width direction inside the sputtering chamber 100. The target 200 is in a hollow cylindrical shape and is horizontally sleeved on the target support 300. Inside the target support 300, there is a magnet assembly 1 for forming a glow plasma region 201 outside the target 200. The substrate holder 500 is a transmission shaft arranged along the width direction inside the sputtering chamber 100. Multiple groups of the transmission shafts are arranged at intervals along the length direction inside the sputtering chamber 100. The substrate 400 includes a flattened substrate and a coating layer to be deposited attached to the substrate. On the sputtering chamber 100, there is a laser irradiation assembly 2. A mirror assembly 3 is movably arranged on the inner wall of the sputtering chamber 100. The laser beam 20 emitted by the laser irradiation assembly 2 irradiates the mirror assembly 3, and the mirror assembly 3 rotates in different directions to reflect the laser beam 20 towards the glow plasma region 201, realizing collaborative sputtering coating.

[0039] The present invention is based on the principles of existing traditional magnetron sputtering coating equipment and methods, including a sputtering chamber 100. Inside the sputtering chamber 100, there is a target holder 300 for placing a target 200, and a substrate holder 500 for placing a substrate 400. In particular, the target holder 300 is arranged along the width direction inside the sputtering chamber 100. The target 200 is in the shape of a hollow cylinder and is horizontally sleeved on the target holder 300. The sputtering chamber 100 is provided with a vacuum component 101 such as a molecular pump assembly for maintaining the required working vacuum degree inside the sputtering chamber 100. In addition, a gas supply system is used to introduce a working gas (such as argon) into the sputtering chamber 100 and maintain a stable gas flow rate to ensure the smooth progress of the sputtering process. At the top inner position of the target holder 300, there is a magnet assembly 1, so that electrons are restricted by the magnetic field near the outer top of the target 200 to form a glow plasma region 201. Ions bombard the target 200 under the guidance of the magnetic field, and thus deposit the atoms of the target 200 onto the substrate 400. Among them, the substrate holder 500 is a transmission shaft arranged along the width direction inside the sputtering chamber 100. The transmission shaft can specifically adopt an existing conventional mechanical transmission shaft or a magnetohydrodynamic transmission shaft. The transmission shafts are arranged at intervals along the length direction inside the sputtering chamber 100. The substrate 400 includes a flattened substrate and a coating layer to be coated attached to the substrate. The sputtering chamber 100 is provided with a laser irradiation component 2, and a mirror assembly 3 is movably arranged on the inner wall of the sputtering chamber 100. Among them, a fixed groove 102 is provided on the outer wall of the sputtering chamber 100. The fixed groove 102 is designed along the width direction of the sputtering chamber 100. The laser irradiation component 2 includes a linear laser generator 21. A pressing plate 22 for fixing the linear laser generator 21 is provided in the fixed groove 102. A quartz glass 23 is provided at the light-emitting end of the linear laser generator 21. The laser beam 20 emitted by the laser irradiation component 2 irradiates the mirror assembly 3 through the quartz glass 23, and the mirror assembly 3 rotates in different directions to reflect the laser beam 20 towards the glow plasma region 201 to achieve cooperative sputtering coating. In normal magnetron sputtering, a glow plasma region 201 is formed near the target 200, and then direct sputtering coating is carried out. However, in the present invention, a laser beam 20 is introduced into the glow plasma region 201 or the sputtering path. The laser beam 20 interacts with the glow plasma or the atoms of the sputtered target 200 to achieve different forms of coating effects. The laser is coupled with the magnetic field to enhance the overall magnetic field, thereby reducing the sputtering voltage, reducing the temperature of the substrate 400, reducing the damage of sputtering ions to the substrate film layer, improving the battery efficiency, increasing the coating rate, and improving the density of the film layer. By using linear laser beams 20 with different wavelengths, the intensity of the laser can be changed. After the plasma formed by irradiating the target 200 interacts with the plasma of the original magnetic field, the minimum damage to the film layer on the substrate and the best battery efficiency are achieved. Specifically, according to the material of the target, lasers with different wavelength bands are used. Near-infrared or visible light is more suitable for metals. Ultraviolet light will cause overheating of the metal target 200 during bombardment, and the effect is worse.Ceramics are more suitable for ultraviolet light. Lasers of other wavelengths also have an impact on the plasma, but the effect on the film layer is not optimal.

[0040] In an embodiment of the present invention, as Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 shown, a plurality of vertical partitions 103 are arranged at intervals in the sputtering chamber 100 for dividing the sputtering chamber 100 into a plurality of independent sputtering zones. Among them, the target support 300 in at least one sputtering zone is located below the base frame 500, and the target support 300 in at least one sputtering zone is located above the base frame 500. The film layers to be coated are respectively attached to the upper and lower surfaces of the substrate. Correspondingly, the fixing grooves 102 are located in the width direction at the bottom and top of the sputtering chamber 100, and there are multiple groups of fixing grooves 102 corresponding to the target support 300. For example, in one sputtering zone, there are two target supports 300 on the left and right, and the corresponding two laser irradiation components 2 and mirror components 3. The position of the magnet assembly 1 at the top end inside the target support 300 remains unchanged, but through mechanical structures such as jaws and pinch rollers at both ends of the target support 300 or inside the target support 300, the target 200 is clamped and driven to rotate axially. The linear laser beam 20 can ensure the uniformity in the axial direction of the target 200, ensuring that the entire plasma region can be irradiated. The substrate 400 can be transported unidirectionally or reciprocally, and double-sided coating can be achieved. By adjusting the light intensity of a certain wavelength laser, the damage to the substrate 400 can be minimized and the battery efficiency can be maximized. At the same time, the introduction of laser participation in sputtering helps to improve the coating rate, density, and film formation quality. The laser beam 20 can change the laser light path through the mirror component 3, which is beneficial for irradiating different positions of the target 200 to achieve the best effect. The upward sputtering is the same as the downward sputtering.

[0041] Among them, for example, as Figure 11 、 Figure 12 、 Figure 13 shown, it is the case of downward sputtering of the target 200, and a glow plasma region 201 as shown in Figure 11 、 Figure 12 、 Figure 13 is formed. By adjusting the rotation angle of the mirror component 3, the laser beam 20 can be irradiated onto the glow plasma region 201, thereby reducing the sputtering voltage and the damage of sputtering ions to the substrate film layer. It can also be irradiated onto the sputtering path to further enhance the energy splitting of particles on the sputtering path and improve the density of the coating film layer. Or it can be irradiated onto the non-glow region beside the edge of the glow plasma region 201 to further increase the sputtering coating rate. Among them, when the laser beam 20 is irradiated onto the glow plasma region 201, the rotation angle of the mirror component 3 can be adjusted to make the laser beam 20 concentrated in Figure 13The straight segment (glow uniform region) of the glow plasma region 201 shown avoids Figure 13 The arc segment (glow non-uniform region) of the glow plasma region 201 shown. Considering that during actual sputtering coating, the consumption of the target 200 is greater in the arc segment (glow non-uniform region) of the glow plasma region 201, which usually causes the two sides of the target 200 to be sputtered completely while there is a lot remaining in the middle, resulting in low utilization rate of the target 200. By introducing the laser beam 20, this situation can be improved.

[0042] In an embodiment of the present invention, as Figure 1 、 Figure 2 、 Figure 3 、 Figure 4 、 Figure 5 、 Figure 8 shown, the mirror assembly 3 includes a mirror body 31 and a rotating shaft 32 connected to the mirror body 31. Both ends of the rotating shaft 32 are rotatably connected to the side wall of the sputtering chamber 100, and an elastic member is provided at the rotating connection. The elastic member can adopt conventional elastic components such as torsion springs. Among them, the rotating shaft 32 can be driven to rotate by a separate driving part. As another implementation manner, optionally, as Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 shown, a pull rope 4 is connected to one end of the mirror body 31. The mirror body 31 is designed as a long plate shape parallel to the length directions of the target 200 and the target bracket 300. The pull ropes 4 are respectively located at both ends in the length direction of the mirror body 31. A guide wheel group 5 is provided inside the side wall of the sputtering chamber 100, and a wire winding drum 6 is rotatably connected inside the side wall of the sputtering chamber 100. One end of the pull rope 4 is guided by the guide wheel group 5 and wound around the wire winding drum 6. Thus, by controlling the rotation of the wire winding drum 6, the pull rope 4 can be pulled to be tightened, and the rotation angles of multiple groups of mirror bodies 31 can be synchronously controlled. For example, when the wire winding drum 6 further rotates to wind up the pull rope 4, the mirror body 31 is driven to rotate in a manner of further tightening the elastic member. When the wire winding drum 6 further rotates to unwind the pull rope 4, the mirror body 31 is driven to rotate in a manner of further loosening the elastic member.

[0043] In an embodiment of the present invention, as Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10As shown, optionally, the take-up reel 6 is located at the middle position between adjacent sputtering areas and is used to simultaneously wind the draw ropes 4 of adjacent sputtering areas. Since the mirror assemblies 3 of adjacent sputtering areas are symmetrically arranged, by controlling the rotation of the take-up reel 6 to wind and release the draw ropes 4, the effect of uniformly adjusting the rotation angles of the mirror assemblies 3 in adjacent sputtering areas is achieved. In actual use, considering the slight deviation between adjacent sputtering areas, adjustment shafts 7 are rotatably connected to both sides of the take-up reel 6 respectively. A limit lug 8 is connected to the outside of the adjustment shaft 7. Thus, after uniformly adjusting the rotation angles of the mirror assemblies 3 in adjacent sputtering areas, when it is necessary to finely adjust the rotation angles of the mirror assemblies 3 in each sputtering area, by separately rotating the adjustment shaft 7, the limit lug 8 presses against the draw rope 4 to different degrees, driving the draw rope 4 to wind and release, so as to separately finely adjust the rotation angles of the mirror bodies 31 in each sputtering area.

[0044] Among them, the take-up reel 6 and the adjustment shaft 7 can be driven to rotate by driving components such as rotary cylinders in the sputtering chamber 100, or a rotary handle can be connected to the end of the take-up reel 6 and the adjustment shaft 7 that penetrates outside the sputtering chamber 100, and the adjustment is achieved by manually rotating the rotary handle. The adjustment shaft 7 can also be arranged on the path of the draw rope 4 connected to each mirror body 31 to achieve individual control of each mirror body 31. In this way, even when there are slight differences in the cathode glow on both sides, independent and minute adjustments can be completed.

[0045] In an embodiment of the present invention, as Figure 5 、 Figure 6 、 Figure 7 、 Figure 8 、 Figure 9 、 Figure 10 shown, optionally, considering that a small amount of particles may be synchronously deposited on the mirror body 31, resulting in the need to regularly replace the mirror body 31. In actual use, often before the target 200 is completely consumed, it is necessary to open the cavity to replace the mirror body 31 first, which affects the production efficiency. By fixedly providing an outer cover frame 9 covering the mirror assembly 3 on the vertical partition 103, only a through groove 10 for the laser beam 20 to enter and exit is opened on the outer cover frame 9. Thus, the particles can only flow into the outer cover frame 9 along the narrow through groove 10 and be deposited on the mirror assembly 3, thereby extending the replacement and maintenance cycle of the mirror body 31. Basically, it is ensured that when opening the cavity to replace the target 200, the mirror body 31 can be replaced and maintained synchronously.

[0046] In an embodiment of the present invention, optionally, as Figure 5 、 Figure 8 、 Figure 9 shown, a blocking cloth 11 is covered on the back of the mirror body 31. At this time, the front of the mirror body 31 is used to reflect the laser beam 20. One end of the blocking cloth 11 is fixedly connected to the mirror body 31, and the other end is connected to the draw rope 4. After using for a certain period, by winding the draw rope 4 with the take-up reel 6 until the mirror body 31 rotates 180°, as Figure 10As shown, the back side of the reflector body 31 initially covered by the blocking cloth 11 faces the laser beam 20. Since the back side of the reflector body 31 initially covered by the blocking cloth 11 is not affected by the deposition, it is used to reflect the laser beam 20 instead of the initial front side, thereby further fully utilizing the reflector body 31 and extending the maintenance period of the reflector body 31.

[0047] Among them, the front and back surfaces of the reflector body 31 are both mirror-designed, or the mirror surface of the reflector body 31 is designed at one end of the front side and the opposite end of the back side for double-sided use, and an avoidance groove is designed on the vertical partition 103 to provide space for the reflector body 31 to rotate 180°.

[0048] The present invention also provides a laser-coordinated glow plasma magnetron sputtering method, comprising the following steps:

[0049] The target material 200 is in a hollow cylindrical shape and is laterally sleeved on the target support 300. The base frame 500 is a transmission shaft arranged along the width direction of the sputtering chamber 100. The substrate 400 is transported along multiple sets of transmission shafts.

[0050] A magnet assembly 1 is provided at the top position of the target holder 300, which is used to form a glow plasma region 201 outside the target material 200. The laser beam 20 emitted by the laser irradiation assembly 2 is irradiated to the reflector assembly 3, and the reflector assembly 3 is rotated in different directions to reflect the laser beam 20 to the glow plasma region 201, thereby realizing coordinated sputtering coating.

[0051] More preferably, a plurality of vertical partitions 103 are provided in the sputtering chamber 100 to divide the sputtering chamber 100 into a plurality of independent sputtering zones, a take-up drum 6 is provided in the middle of adjacent sputtering zones to wind up the pull rope 4, the pull rope 4 is transmission-connected to the reflector assembly 3 of the adjacent sputtering zones to uniformly adjust the rotation angle of the reflector assembly 3 of the adjacent sputtering zones, adjustment shafts 7 are rotationally connected to the two sides of the take-up drum 6 respectively, a limiting protrusion 8 is connected to the outer side of the adjustment shaft 7, and the adjustment shaft 7 is rotated separately to make the limiting protrusion 8 press against the pull rope 4 to different degrees, thereby driving the pull rope 4 to be retracted and released, so as to fine-tune the rotation angle of the reflector body 31 in each sputtering zone separately.

[0052] More preferably, the outer cover of the reflector assembly 3 is provided with an outer cover frame 9, and the outer cover frame 9 is only provided with a through groove 10 for the laser beam 20 to enter and emit, and the back of the reflector body 31 is covered with a blocking cloth 11, and the pull rope 4 is rolled up by the take-up reel 6 until the reflector body 31 is rotated 180°, so that the back of the reflector body 31 initially covered by the blocking cloth 11 faces the laser beam 20 and reflects the laser beam 20.

[0053] Those of ordinary skill in the art should understand that the discussion of any of the above embodiments is merely exemplary and is not intended to imply that the scope of the present invention is limited to these examples; under the concept of the present invention, the technical features in the above embodiments or different embodiments can also be combined, the steps can be implemented in any order, and there are many other variations in different aspects of the present invention as described above, which are not provided in detail for the sake of brevity.

Claims

1. A laser-coordinated glow plasma magnetron sputtering method, wherein the method uses a laser-coordinated glow plasma magnetron sputtering device for sputtering, the device comprising a sputtering chamber (100), wherein a target support (300) for placing a target material (200) and a base frame (500) for placing a substrate (400) are provided in the sputtering chamber (100), wherein the sputtering chamber (100) is provided with a target support (300) for placing a target material (200) and a base frame (500) for placing a substrate (4 ... The steps include: The target material (200) is in a hollow cylindrical shape and is laterally sleeved on the target support (300); the base frame (500) is a plurality of transmission shafts arranged along the width direction of the sputtering chamber (100); and the substrate (400) is transported along the plurality of transmission shafts; A magnet assembly (1) is provided at the top end of the target support (300) for forming a glow plasma region (201) outside the target material (200); a laser irradiation assembly (2) is provided on the sputtering chamber (100); a reflector assembly (3) is movably provided on the inner wall of the sputtering chamber (100); a laser beam (20) emitted by the laser irradiation assembly (2) is irradiated toward the reflector assembly (3), and the reflector assembly (3) is rotated in different directions so that the laser beam (20) is reflected toward the glow plasma region (201), thereby realizing coordinated sputtering coating.

2. The laser-coordinated glow plasma magnetron sputtering method according to claim 1, characterized in that: A plurality of vertical partitions (103) are arranged at intervals in the sputtering chamber (100) for dividing the sputtering chamber (100) into a plurality of independent sputtering zones. A take-up drum (6) is arranged at the middle position of adjacent sputtering zones for winding up a pull rope (4). The pull rope (4) is in driving connection with the reflector assembly (3) of the adjacent sputtering zones for uniformly adjusting the rotation angle of the reflector assembly (3) of the adjacent sputtering zones. Adjustment shafts (7) are rotatably connected at both sides of the take-up drum (6). The outer side of the adjustment shaft (7) is connected to a limiting protrusion (8). By rotating the adjustment shaft (7) alone, the limiting protrusion (8) presses the pull rope (4) to different degrees, driving the pull rope (4) to be retracted and released, for individually fine-tuning the rotation angle of the reflector body (31) in each sputtering zone.

3. The laser-coordinated glow plasma magnetron sputtering method according to claim 2, characterized in that: The reflector assembly (3) is provided with an outer cover frame (9), the outer cover frame (9) is only provided with a through slot (10) for the laser beam (20) to enter and exit, the back cover of the reflector body (31) is provided with a blocking cloth (11), and the pull rope (4) is wound up by a take-up drum (6) until the reflector body (31) is rotated 180 degrees, so that the back of the reflector body (31) initially covered by the blocking cloth (11) faces the laser beam (20), and reflects the laser beam (20).

4. A laser-coordinated glow plasma magnetron sputtering device using the laser-coordinated glow plasma magnetron sputtering method according to any one of claims 1 to 3, comprising a sputtering chamber (100), wherein a target holder (300) for placing a target material (200) and a base frame (500) for placing a substrate (400) are provided in the sputtering chamber (100), characterized in that: The target support (300) is arranged along the width direction of the sputtering chamber (100); the target material (200) is in a hollow cylindrical shape and is laterally sleeved on the target support (300); a magnet assembly (1) is arranged in the target support (300) for forming a glow plasma region (201) outside the target material (200); The base frame (500) is a transmission shaft arranged along the width direction of the sputtering chamber (100), and a plurality of transmission shafts are arranged at intervals along the length direction of the sputtering chamber (100). The substrate (400) comprises a flattened substrate and a layer to be coated attached to the substrate. The sputtering chamber (100) is provided with a laser irradiation component (2), and a reflector component (3) is movably provided on the inner wall of the sputtering chamber (100); a laser beam (20) emitted by the laser irradiation component (2) is irradiated toward the reflector component (3), and the reflector component (3) is rotated in different directions so that the laser beam (20) is reflected toward the glow plasma region (201), thereby realizing coordinated sputtering coating.

5. The laser-coordinated glow plasma magnetron sputtering device according to claim 4, characterized in that: A fixing groove (102) is provided on the outer wall of the sputtering chamber (100), the laser irradiation assembly (2) comprises a linear laser generator (21), a pressing plate (22) for fixing the linear laser generator (21) is provided in the fixing groove (102), and a quartz glass (23) is provided at the light output end of the linear laser generator (21).

6. The laser-coordinated glow plasma magnetron sputtering device according to claim 4, characterized in that: A plurality of vertical partitions (103) are arranged in the sputtering chamber (100) to divide the sputtering chamber (100) into a plurality of independent sputtering zones, wherein the target support (300) in at least one sputtering zone is located below the base frame (500), and the target support (300) in at least one sputtering zone is located above the base frame (500), and the layers to be coated are respectively attached to the upper and lower surfaces of the substrate.

7. The laser-coordinated glow plasma magnetron sputtering device according to claim 6, characterized in that: The reflector assembly (3) comprises a reflector body (31) and a rotating shaft (32) connected to the reflector body (31); both ends of the rotating shaft (32) are rotatably connected to the side wall of the sputtering chamber (100), and an elastic member is provided at the rotatable connection; one end of the reflector body (31) is connected to a pull rope (4); a guide wheel group (5) is provided inside the side wall of the sputtering chamber (100); a wire reel (6) is rotatably connected inside the side wall of the sputtering chamber (100); one end of the pull rope (4) is guided by the guide wheel group (5) and is wound around the wire reel (6); the wire reel (6) is rotated to pull the pull rope (4) to achieve control of the rotation angle of the reflector body (31).

8. The laser-coordinated glow plasma magnetron sputtering device according to claim 7, characterized in that: The wire take-up drum (6) is located in the middle of adjacent sputtering zones and is used to simultaneously take up the pull ropes (4) of adjacent sputtering zones. Adjustment shafts (7) are rotatably connected to the two sides of the wire take-up drum (6). The outer side of the adjustment shaft (7) is connected to a limiting protrusion (8). By rotating the adjustment shaft (7) alone, the limiting protrusion (8) presses the pull rope (4) to different degrees, so as to adjust the rotation angle of the reflector body (31) in each sputtering zone alone.

9. The laser-coordinated glow plasma magnetron sputtering device according to claim 7, characterized in that: An outer cover frame (9) covering the reflector assembly (3) is fixedly provided on the vertical partition plate (103), and a through slot (10) for the laser beam (20) to be injected into and emitted from the outer cover frame (9) is provided.

10. The laser-coordinated glow plasma magnetron sputtering device according to claim 9, characterized in that: The back cover of the reflector body (31) is provided with a blocking cloth (11), one end of the blocking cloth (11) is fixedly connected to the reflector body (31), and the other end is connected to a pull rope (4), and the pull rope (4) is rolled up by a take-up drum (6) until the reflector body (31) is rotated 180 degrees, so that the back of the reflector body (31) covered by the blocking cloth (11) faces the laser beam (20).

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