Film forming apparatus

Abstract

The invention provides a film forming apparatus capable of suppressing expansion and contraction caused by thermal expansion of an adhesion prevention plate. A film forming apparatus (1) according to an embodiment includes: a chamber (20) capable of having a vacuum inside; a table provided in the chamber (20) and holding the plurality of workpieces (10); a film formation unit (40) that has a plasma generator (P1) for converting the gas introduced into the chamber (20) into plasma, and that forms a film on the workpiece (10) supported by the stage; an adhesion prevention plate (410) that is disposed so as to surround a processing space (41) in which a film is formed on the workpiece (10) by the film formation unit (40), and that prevents the film formation material from adhering to the inside of the chamber (20); a cooling block (420) having a contact surface (421) in direct contact with the adhesion prevention plate (410) and cooling the adhesion prevention plate (410); and a flow path (422) which is provided in the cooling block (420) and through which a cooling medium flows.

Description

Technical Field

[0001] The invention relates to a film forming device. Background Art

[0002] There is a film forming device as follows: in a chamber set to vacuum, a workpiece is circulated and transported by a rotating table, and deposition of a film forming material by sputtering and nitridation of the deposited film forming material are performed simultaneously (see Patent Document 1). In this film forming device, a film forming processing section for film formation and a film processing section for nitridation are provided in one chamber. In the film forming processing section, the workpiece is passed through a position facing a target containing a film forming material, thereby causing particles of the film forming material released from the target to adhere to the workpiece. In the film forming processing section, a processing space for film formation on the workpiece is formed by an anti-adhesion plate surrounding the area containing the target. The anti-adhesion plate acts as a shield to prevent particles of the film forming material released from the target from adhering to the inner surface of the chamber and diffusing the particles into the chamber. In addition, in a film forming device that forms a film by sputtering, there is also a device that forms a film while heating the workpiece (see Patent Document 2).

[0003] [Prior art literature]

[0004] [Patent Document]

[0005] [Patent Document 1] Japanese Patent No. 7144219

[0006] [Patent Document 2] Japanese Patent No. 6611666 Summary of the invention

[0007] [Problems to be solved by the invention]

[0008] However, in the above-mentioned film forming processing device, the anti-adhesion plate provided in the film forming processing part expands and contracts due to thermal expansion. As a result, the film forming material attached to the anti-adhesion plate peels off and falls onto the rotating table. If the fallen film forming material remains on the rotating table, it becomes a contamination source of the workpiece, resulting in product defects of the workpiece.

[0009] When the film forming process is terminated and the device is stopped for maintenance, the expansion and contraction of the anti-adhesion plate due to thermal expansion is likely to occur when the temperature in the chamber is lowered to normal. In addition, during the film forming process, the temperature is controlled to be constant by the heating unit provided in the rotating table, but sometimes the temperature in the chamber changes, and there is a case where the film forming material falls due to the slight expansion and contraction of the anti-adhesion plate. Therefore, it is necessary to suppress the expansion and contraction of the anti-adhesion plate due to thermal expansion.

[0010] The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to provide a film forming apparatus capable of suppressing expansion and contraction due to thermal expansion of an anti-adhesion plate.

[0011] [Technical means to solve the problem]

[0012] In order to achieve the above-mentioned purpose, the film forming device of the present embodiment comprises: a chamber capable of making the interior of the chamber a vacuum; a workbench arranged in the chamber to support a workpiece; a film forming section having a plasma generator for converting a gas introduced into the chamber into a plasma, so as to form a film on the workpiece supported by the workbench; an anti-adhesion plate configured to surround a processing space in which a film is formed on the workpiece by the film forming section, so as to prevent the film forming material from adhering to the chamber; a cooling block arranged in the chamber, having a contact surface in direct contact with the anti-adhesion plate, so that the contact surface contacts and cools the anti-adhesion plate; and a flow path arranged in the cooling block for the circulation of a cooling medium.

[0013] [Effects of the Invention]

[0014] According to the embodiment of the present invention, the expansion and contraction caused by the thermal expansion of the anti-adhesion plate can be suppressed, the peeling of the film-forming material attached to the anti-adhesion plate can be reduced, and the adhesion of the peeled film-forming material to the workpiece can be suppressed, thereby reducing the occurrence of product defects. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a partial perspective plan view schematically showing the structure of the film forming apparatus according to the embodiment.

[0016] Figure 2 yes Figure 1 The AB arrow cross-sectional view is a detailed view of the internal structure observed from the side of the self-film forming device.

[0017] Figure 3 yes Figure 1 The AC arrow cross-sectional view is a detailed view of the internal structure observed from the side of the self-film forming device.

[0018] 4(A) is a perspective view from the upper side showing a workpiece to be film-formed, an absorbing member on which the workpiece is placed, and a tray, and FIG. 4(B) is a perspective view from the lower side.

[0019] Fig. 5(A) is a plan view showing an anti-adhesion plate and a cooling block, Fig. 5(B) is a side view viewed from the α side of Fig. 5(A) , and Fig. 5(C) is a side view viewed from the β side of Fig. 5(A) .

[0020] 6(A) is an exploded perspective view of the anti-adhesion plate and the cooling block as viewed from the upper surface side, FIG. 6(B) is a perspective view, and FIG. 6(C) is a perspective view as viewed from the bottom surface side.

[0021] Figure 7 This is a flowchart of a process performed by the film forming apparatus according to the embodiment.

[0022] FIG8(A) is a cross-sectional view showing an example of a layer structure of an LED, and FIG8(B) is an enlarged cross-sectional view of a buffer layer.

[0023] Fig. 9 2 is a longitudinal sectional view showing a modified example of a non-circulating transport film forming apparatus ( Fig.10 EE arrow cross-sectional view).

[0024] Fig.10 yes Fig. 9 DD arrow cross-sectional view of the film-forming device.

[0025] Fig.11 Is applied to Fig. 9 A perspective view of a cooling block.

[0026] [Explanation of Symbols]

[0027] 1: Film forming device

[0028] 10: Artifacts

[0029] 10a: Buffer layer

[0030] 10b: GaN layer

[0031] 10c: GaN layer

[0032] 10d: Luminous layer

[0033] 10e: Transparent conductive film

[0034] 11: Pallet

[0035] 11a: Hole

[0036] 11b: Positioning hole

[0037] 12: Absorption component

[0038] 20: Chamber

[0039] 20a: Top surface

[0040] 20b: Bottom surface

[0041] 20c: Side

[0042] 20d: Through hole

[0043] 20e: Fastening components

[0044] 21: Exhaust port

[0045] 21a: Opening

[0046] 22: Through hole

[0047] 23: Exhaust

[0048] 24: Move out / move in

[0049] 30: Transport Department

[0050] 31: Rotating table

[0051] 31a: Insertion hole

[0052] 31b: Fastening member

[0053] 31c: Holding hole

[0054] 32: Motor

[0055] 33: Insulation

[0056] 34: Heating unit

[0057] 35: Rotating connection

[0058] 36: Insulation

[0059] 36a: Heat insulation board

[0060] 36b: Support foot

[0061] 40: Film forming unit

[0062] 40A: Film forming department

[0063] 40B: Film forming unit

[0064] 41: Processing Space

[0065] 42: Target

[0066] 43: Support plate

[0067] 44: Electrode

[0068] 46: Power supply department

[0069] 47: Gas inlet

[0070] 48: Piping

[0071] 49: Sputtering gas inlet

[0072] 50: Membrane treatment unit

[0073] 51: Cylindrical body

[0074] 52: Window components

[0075] 53: Antenna

[0076] 54: RF power supply

[0077] 55: Matching box

[0078] 56: Gas inlet

[0079] 57: Piping

[0080] 58: Process gas introduction part

[0081] 59: Processing Space

[0082] 60: Surface treatment department

[0083] 61: Cylindrical electrode

[0084] 61a: Opening

[0085] 61b: Flange

[0086] 61c: Insulating components

[0087] 61d: Shell

[0088] 62: Shield

[0089] 64: Processing Space

[0090] 65: Process gas introduction part

[0091] 66: RF Power Supply

[0092] 67: Matching box

[0093] 70: Transfer Department

[0094] 71: Load lock chamber

[0095] 90: Control device

[0096] 311: Rotation axis

[0097] 311a: Center hole

[0098] 311b: Board

[0099] 351: Rotating electrode unit

[0100] 351a: Ring electrode

[0101] 351b: Cable

[0102] 352: Stationary electrode section

[0103] 352a: Brush electrode

[0104] 352b: Cable

[0105] 410: Anti-adhesion plate

[0106] 411: Main body

[0107] 411a: Opening

[0108] 412: Expansion Department

[0109] 413: Heat transfer part

[0110] 414: Shelter

[0111] 415: Ring

[0112] 415a: Fixed plate

[0113] 416: Pillar Department

[0114] 420: Cooling Block

[0115] 421: Contact surface

[0116] 422: Flow path

[0117] 422a: Inlet

[0118] 422b: Outflow port

[0119] 422c: Connector

[0120] 422d: Piping

[0121] 423: Cooling device

[0122] FA: Film forming area

[0123] G1: Sputtering gas

[0124] G2: Process gas

[0125] G3: Process gas

[0126] HA: Hold Area

[0127] L: Transport path

[0128] P1~P3: Plasma generator

[0129] S101~S115: Steps

[0130] ST: Workbench DETAILED DESCRIPTION

[0131] Embodiments of the film forming apparatus will be described with reference to the drawings. Note that the drawings schematically illustrate each member and each component, and do not accurately illustrate their dimensions or intervals.

[0132] [summary]

[0133] Figure 1 to Figure 3 The film forming apparatus 1 shown is an apparatus for forming a GaN (Gallium Nitride) film or an AlN (Aluminum Nitride) film on a workpiece 10 as a film forming target by sputtering.

[0134] The workpiece 10 as the film forming object is, for example, a silicon (Si) wafer, a silicon carbide (SiC) wafer, a sapphire substrate, or a glass substrate. As shown in FIG. 4(A), the workpiece 10 of the present embodiment is a circular plate. As described later, the workpiece 10 is placed on a tray 11 and transported. The tray 11 is a plate held on a rotating table 31. As shown in FIG. 4(A) and FIG. 4(B), the workpiece 10 is placed on the tray 11 via an absorbing member 12.

[0135] like Figure 1 As shown, the film forming apparatus 1 includes a chamber 20, a conveying unit 30, a film forming unit 40, an anti-adhesion plate 410, a cooling block 420, a film processing unit 50, a surface processing unit 60, a transfer unit 70, and a control device 90. These will be described in detail below.

[0136] The film forming apparatus 1 is a chamber 20 capable of being made vacuum, and while the workpiece 10 is being transported by the transport unit 30, various processes are performed by the following units, namely, a film forming unit 40 for performing film forming process on the workpiece 10, a film processing unit 50 for performing chemical reaction process on the film formed by the film forming unit 40, and a surface processing unit 60 for processing the surface of the workpiece 10 before film formation or after film formation. In addition, the transport unit 70 is provided for carrying the workpiece 10 in and out of the chamber 20. These units are controlled by the control device 90.

[0137] [Chamber]

[0138] like Figure 2 As shown, the chamber 20 is a container capable of making the interior thereof vacuum. The chamber 20 is cylindrical in shape and is surrounded by a disc-shaped top surface 20a, a disc-shaped bottom surface 20b, and an annular side surface 20c. The top surface 20a is provided to be openable and closable for maintenance, etc. A cylindrical space is ensured inside the chamber 20. A rotating table 31 for conveying a workpiece 10 described later is arranged in the cylindrical space.

[0139] The chamber 20 is provided with an exhaust port 21. An exhaust unit 23 is connected to the exhaust port 21. The exhaust unit 23 has a pipe and a pump and a valve (not shown). By exhausting the air through the exhaust port 21 using the exhaust unit 23, the chamber 20 can be decompressed to form a vacuum. In order to suppress the oxygen concentration, the exhaust unit 23 exhausts the air until the vacuum degree reaches 10. -4 Pa until now.

[0140] Furthermore, if Figure 1 As shown, the chamber 20 is provided with a carry-in / carry-out port 24 for carrying in and out the workpiece 10. The carry-in / carry-out port 24 is provided at a position on the side surface of the chamber 20, and a transfer unit 70 described later is connected to the position.

[0141] [Transportation Department]

[0142] like Figure 1 to Figure 3 As shown, the conveying unit 30 includes a rotating table 31, a motor 32, a heat insulating unit 33, a heating unit 34, a rotating connecting unit 35, and a heat insulating unit 36. The conveying unit 30 is provided in the chamber 20, holds a plurality of workpieces 10, and cyclically conveys the workpieces 10 along a conveying path L which is a circular trajectory. In addition, the conveying unit 30 heats the workpieces 10 using the heating unit 34.

[0143] (Turntable)

[0144] The rotating table 31 is a workbench provided in the chamber 20 to support the workpiece 10. The rotating table 31 is a disc-shaped member arranged in the chamber 20, and is greatly extended to such an extent that it does not contact the inner side of the side surface 20c. The workpiece 10 is cyclically transported along the transport path L by the rotating table 31. The rotating table 31 is supported by inserting a cylindrical rotating shaft 311 coaxial with the insertion hole 31a into the insertion hole 31a provided at the center thereof via a fastening member 31b. The interior of the rotating shaft 311 is a hollow atmospheric pressure space, and is fixed in a manner that a circular plate 311b covers the center hole 311a as an open end. In addition, the rotating shaft 311 penetrates the through hole 20d provided on the bottom surface 20b of the chamber 20 and protrudes to the outside, and is supported rotatably by a fastening member 20e fastened to the bottom surface 20b in an airtight manner.

[0145] In addition, the film forming apparatus 1 of the present embodiment is arranged so that the rotation axis 311 of the rotating table 31 is in the vertical direction, and the direction parallel to the rotation axis 311 is the up-down direction. In the following description, movement in the direction parallel to the rotation axis 311 is referred to as up-down movement or lifting. However, the arrangement direction of the film forming apparatus 1 is not limited to this.

[0146] (motor)

[0147] The motor 32 is disposed outside the chamber 20 and is a driving source that rotates the rotating shaft 311 via a coupling member (not shown) to continuously rotate the rotating table 31 at a predetermined rotation speed. The rotating table 31 rotates at a speed of, for example, 1 rpm to 150 rpm.

[0148] The workpiece 10 is placed on a tray 11 and transported by a rotating table 31. The tray 11 is a plate body held on the rotating table 31. As shown in FIG. 4(A) and FIG. 4(B), the tray 11 of the present embodiment is, for example, a quartz plate body in a horizontally long hexagonal shape. In the center of the tray 11, an absorbing member 12 for holding the workpiece 10 is embedded in the hole 11a. A step is provided at the inner edge of the hole 11a to support the absorbing member 12. The workpiece 10 is placed on the tray 11 via the absorbing member 12.

[0149] As shown in FIG4(B), positioning holes 11b are formed on the lower surface of the tray 11. The positioning holes 11b are formed one on each side of the hole 11a near the center, and two in total. In addition, when the workpiece 10 is held, transferred, transported, carried in, or carried out, it includes holding, transferring, transporting, carrying in, or carrying out via other members such as the tray 11 and the absorbing member 12.

[0150] The absorbing member 12 is a member that receives the electromagnetic wave from the heating unit 34 for heating, suppresses the heat dissipation of the workpiece 10 heated by the heating unit 34, and suppresses the temperature drop of the workpiece 10. The absorbing member 12 of this embodiment is a circular plate having a circular depression on the upper surface for placing the workpiece 10. The absorbing member 12 is inserted into the hole 11a of the tray 11 so that the upper and lower surfaces thereof are exposed.

[0151] The absorption member 12 is made of a material that absorbs electromagnetic waves of the wavelength emitted by the heating section 34. The absorption member 12 is a plate-shaped member. Materials with low thermal conductivity and excellent heat resistance, such as silicon carbide (SiC), carbon graphite, glassy carbon, etc., can be used as the absorption member 12. A member whose surface is coated with a heat-resistant hard member in black can also be used as the absorption member 12. In addition, the color does not need to be limited to black. That is, even if a member in which a coating that absorbs electromagnetic waves of the wavelength emitted by the heating section 34 is coated on a part or all is used as the absorption member 12, a member in which a member that absorbs electromagnetic waves of the wavelength emitted by the heating section 34 is used in a part can also be used as the absorption member 12. In addition, if the workpiece 10 can be heated to the desired temperature only by the heating section 34, the absorption member 12 is not necessary.

[0152] like Figure 1 As shown in FIG. 1 , a film forming area FA where a plurality of workpieces 10 are formed is provided on the rotating table 31. Figure 1 As shown by the double-dashed line, the film forming area FA is an annular area of ​​the turntable 31, which is an area outside the rotation axis 311 and faces the film forming unit 40 and the film processing unit 50, when viewed from above. In the film forming area FA, holding areas HA for holding each workpiece 10 are provided at equal intervals in the circumferential direction.

[0153] like Figure 1 to Figure 3As shown in the figure, a holding hole 31c is formed in the holding area HA, and the holding hole 31c is provided with a step difference at the inner edge for the outer edge of the tray 11 to be fitted. Although not shown in the figure, a pair of positioning pins are provided on the bottom surface of the holding hole 31c so as to sandwich the heating unit 34 described later when viewed from above. The tray 11 is positioned by the pair of positioning pins fitting into the positioning hole 11b, and is placed in the holding hole 31c. Thus, the tray 11 carrying the workpiece 10 is held in the holding area HA.

[0154] like Figure 1 As shown, six holding areas HA are arranged at intervals of 60° on the rotating table 31. That is, the film forming apparatus 1 can form a film on a plurality of workpieces 10 held in a plurality of holding areas HA at once, and thus the productivity is very high.

[0155] (Thermal insulation part)

[0156] As Figure 2 and Figure 3 As shown, the heat insulating portion 33 is a plate body formed of a heat insulating material and fixed to the holding area HA. ​​In the present embodiment, the heat insulating portion 33 is embedded in the bottom surface of the holding hole 31c. As the heat insulating portion 33, for example, ceramic is used. The heat insulating portion 33 has the same shape as the heating portion 34 and is at least the same size as the heating portion 34. That is, the heat insulating portion 33 only needs to be larger than the size of the heating portion 34, so that the entirety of the heating portion 34 overlapping with the heat insulating portion 33 is contained within the outer edge of the heat insulating portion 33 when viewed from above.

[0157] (Heating unit)

[0158] The heating part 34 is a heater that generates heat by passing electricity. The heater can generate heat by resistance heating, electromagnetic induction heating, or light emitting diode (LED) light source. The heating part 34 is a circular plate supported on the heat insulating part 33. Thus, the heating part 34 is arranged between the turntable 31 and the workpiece 10 in the holding area HA, and the heat insulating part 33 is arranged between the heating part 34 and the turntable 31. The heating part 34 only needs to be at least the size of the range in which the workpiece 10 is arranged on the absorbing member 12 or the workpiece 10 is arranged on the tray 11. Therefore, the heating part 34 does not necessarily need to be the size that includes the tray 11. The heat insulating part 33 and the heating part 34 as described above are respectively arranged in the holding area HA.

[0159] When the workpiece 10 is placed on the holding area HA of the rotating table 31, the upper surface of the heating portion 34 is arranged to correspond to the lower side of the absorbing member 12. Figure 2 As shown, the heat insulating portion 33 , the heating portion 34 , the absorbing member 12 , and the workpiece 10 are arranged in this order from the bottom of the rotating table 31 to overlap each other.

[0160] The heat insulating portion 33 having the same shape and at least the same size as the heating portion 34 can prevent the heat generated by the heating portion 34 from escaping to the rotating table 31 and causing damage (deformation, etc.) to the rotating table 31. In addition, the heat can be prevented from being dissipated from the bottom of the rotating table 31. In addition, the heating portion 34 heats the workpiece 10 via the absorbing member 12 of the tray 11. However, the absorbing member 12 can also be omitted and the heating portion 34 can be configured to contact the workpiece 10. That is, the heating portion 34 can be directly heated by contacting with the workpiece 10, or can be indirectly heated by interposing other members.

[0161] (Rotary connection)

[0162] The rotary connection part 35 is a connector for electrically connecting the heating part 34, which is cyclically transported along a circumferential trajectory together with the workpiece 10, to a power source. The rotary connection part 35 of this embodiment is a slip ring having a rotary electrode part 351 and a stationary electrode part 352. In addition, a rotary connector may be used as the rotary connection part 35.

[0163] More specifically, the rotating electrode unit 351 includes a plurality of conductive annular electrodes 351a coaxially arranged with the rotating shaft 311 outside the chamber 20. Each annular electrode 351a is connected to the heating unit 34 by a cable 351b (positive electrode wire, negative electrode wire). The cable 351b from each annular electrode 351a passes through a hole provided in the rotating shaft 311, passes through the center of the plate 311b from the inside of the rotating shaft 311, and reaches the heating unit 34. Thus, each annular electrode 351a and the cable 351b rotate together with the rotating shaft 311.

[0164] The stationary electrode unit 352 is a structural unit in which a plurality of conductive brush electrodes 352a are fixed to positions in contact with the respective annular electrodes 351a in a manner independent of the rotating shaft 311. The brush electrodes 352a are connected to the control device 90 via cables 352b to perform power supply and control. That is, power is applied to the annular electrode 351a via the brush electrodes 352a or power is stopped, so that the temperature of the heating unit 34 is increased or decreased.

[0165] A portion of the brush electrode 352a is in contact with the outer periphery of the ring electrode 351a, thereby forming a sliding contact. As a result, the rotating electrode portion 351 and the stationary electrode portion 352 are in a conductive state, and even if the rotating electrode portion 351 rotates together with the rotating shaft 311, the ring electrode 351a is always in contact with the brush electrode 352a, so that power can be transmitted to the heating portion 34.

[0166] The rotating connection part 35 as a slip ring is arranged outside the chamber 20 to avoid vacuum discharge at the sliding contact point between the brush electrode 352a and the ring electrode 351a. Figure 2Although simplified in FIG. 1 , a pair of cables 351 b and 352 b connected to the annular electrode 351 a and the brush electrode 352 a are provided in each heating unit 34 , and the temperature of each heating unit 34 can be controlled individually.

[0167] (Thermal insulation part)

[0168] The heat insulating part 36 is arranged along the film forming area FA (including the processing space 59 and the processing space 64) opposite to each processing part, sandwiching the turntable 31, and is spaced apart from the turntable 31. That is, the heat insulating part 36 is arranged in a manner of covering the lower surface of the turntable 31 separately. The heat insulating part 36 has a plurality of heat insulating plates 36a. The heat insulating plate 36a is a metal flat plate as a horizontal annular plate body. A plurality of heat insulating plates 36a are stacked and spaced apart from each other, and are supported and fixed to the bottom surface 20b of the chamber 20 by supporting legs 36b.

[0169] In this way, by overlapping and arranging a plurality of heat shielding plates 36a in a direction away from the position close to the rotating table 31, the radiant heat from the heating unit 34 can be gradually reduced in a vacuum, and the heat dissipation to the bottom surface 20b of the chamber 20 can be suppressed. By suppressing the heat dissipation from the bottom surface 20b of the chamber 20, the inner wall surface of the bottom surface 20b of the chamber 20, the bearing of the rotating shaft 311, etc., which are damaged by heat, can be prevented. By blocking the outflow of heat, it also has a heat preservation effect, thereby maintaining the workpiece 10 at a high temperature. Furthermore, it is possible to maintain the desired temperature with less power. In addition, in order to suppress the damage caused by heat, in addition to the heat shielding plates 36a, a reflective plate can also be provided so that the light emitted from the heating unit 34 does not irradiate the bottom surface 20b of the chamber 20. In order to obtain the same light reflection effect, the surface of the heat shielding plate 36a can also be plated with gold.

[0170] [Film Forming Department]

[0171] The film forming unit 40 generates plasma and exposes a target 42 made of a film forming material to the plasma. Thus, the film forming unit 40 deposits particles (hereinafter referred to as sputtered particles) constituting the target 42 knocked out by ions contained in the plasma colliding with the target 42 on the workpiece 10 to form a film. The film forming unit 40 has a plasma generator P1 that converts a sputtering gas G1 introduced between the target 42 containing the film forming material and the rotating table 31 into plasma.

[0172] like Figure 2 and Figure 3 As shown, the plasma generator P1 includes a sputtering source including a target 42 , a support plate 43 , and an electrode 44 , a power supply unit 46 , and a sputtering gas introduction unit 49 .

[0173] The target 42 is a plate-shaped member containing a film-forming material deposited on the workpiece 10 to form a film. The target 42 is provided separately from the conveying path L of the workpiece 10 mounted on the rotating table 31. The surface of the target 42 is held on the top surface 20a of the chamber 20 so as to face the workpiece 10 mounted on the rotating table 31. For example, three targets 42 are provided. The three targets 42 are provided at positions arranged at the vertices of a triangle when viewed from above.

[0174] The support plate 43 is a support member for holding the target 42. The support plate 43 holds each target 42 individually. The electrode 44 is a conductive member for applying power to each target 42 individually from the outside of the chamber 20, and is electrically connected to the target 42. The power applied to each target 42 can be changed individually. In addition, in the sputtering source, a magnet, a cooling mechanism, etc. are appropriately included as needed.

[0175] The power supply unit 46 is, for example, a direct current (DC) power supply that applies a high voltage, and is electrically connected to the electrode 44. The power supply unit 46 applies power to the target 42 via the electrode 44. The potential of the rotary table 31 is the same as that of the grounded chamber 20, and a potential difference is generated by applying a high voltage to the target 42 side.

[0176] like Figure 2 and Figure 3 As shown, the sputtering gas introduction part 49 introduces the sputtering gas G1 into the chamber 20. The sputtering gas introduction part 49 has a supply source of the sputtering gas G1 such as a gas cylinder (not shown), a pipe 48, and a gas introduction port 47. The pipe 48 is connected to the supply source of the sputtering gas G1, passes through the chamber 20 in an airtight manner and extends to the inside of the chamber 20, and its end is opened as the gas introduction port 47. The sputtering gas introduction part 49 of this embodiment introduces the sputtering gas G1 into the processing space 41 in such a manner that the pressure of the processing space 41 becomes, for example, 0.3 Pa or more and 1.0 Pa or less.

[0177] The gas inlet 47 opens between the rotating table 31 and the target 42, and introduces the sputtering gas G1 for film formation into the processing space 41 formed between the rotating table 31 and the target 42. As the sputtering gas G1, a rare gas can be used, and argon (Ar) gas is suitable. The sputtering gas G1 can be set to, for example, a single gas of argon (Ar).

[0178] In such a film forming unit 40, when the sputtering gas G1 is introduced from the sputtering gas introduction unit 49 and the power supply unit 46 applies a high voltage to the target 42 via the electrode 44, the sputtering gas G1 introduced into the processing space 41 formed between the rotating table 31 and the target 42 is converted into plasma, generating active species such as ions. The ions in the plasma collide with the target 42 to knock out sputtered particles.

[0179] In addition, the workpiece 10 cyclically transported by the rotating table 31 passes through the processing space 41. The sputtered particles knocked out are deposited on the workpiece 10 when the workpiece 10 passes through the processing space 41, so that a film containing the sputtered particles is formed on the workpiece 10. The workpiece 10 is cyclically transported by the rotating table 31 and repeatedly passes through the processing space 41, thereby performing film forming processing. The film thickness of the film deposited each time it passes through the film forming section 40 also depends on the processing rate of the film processing section 50, for example, it can be set to a thin film of about 1 atomic level to 2 atomic level (less than 5nm). By cyclically transporting the workpiece 10 multiple times, the thickness of the film increases, and a film of a specified film thickness is formed on the workpiece 10.

[0180] The plurality of film forming units 40 selectively deposit film forming materials to form a film including layers of a plurality of film forming materials. In particular, in the present embodiment, sputtering sources corresponding to different types of film forming materials are included to selectively deposit film forming materials, thereby forming a film including layers of a plurality of film forming materials. The inclusion of sputtering sources corresponding to different types of film forming materials includes both a case where the film forming materials of all the film forming units 40 are different and a case where the film forming materials are common to the plurality of film forming units 40 but different from the others. The selective deposition of film forming materials one by one means that while a film forming unit 40 of any one film forming material is performing film formation, a film forming unit 40 of another film forming material is not performing film formation.

[0181] In this embodiment, if Figure 1 As shown, two film forming units 40 are arranged, and the film forming material of the target 42 constituting one of the film forming units 40 is a material containing Ga and GaN, and the target 42 becomes a supply source of sputtering particles containing Ga atoms deposited on the workpiece 10. The target 42 contains GaN and incomplete GaN lacking nitrogen, that is, Ga atoms with a defective bond with N (nitrogen).

[0182] The film-forming material of the target 42 constituting the other film-forming section 40 is a material containing Al, and the target 42 becomes a supply source of sputtering particles containing Al atoms deposited on the workpiece 10. In addition, if the target 42 for sputtering can supply sputtering particles containing Ga atoms and sputtering particles containing Al atoms, it is allowed even if it contains materials other than Ga, Al, and N (nitrogen).

[0183] In order to distinguish the two film forming units 40, the film forming unit 40 having a target 42 formed of a material containing Ga and GaN is set as a film forming unit 40A (GaN film forming unit), and the film forming unit 40 having a target 42 formed of a material containing Al is set as a film forming unit 40B (Al film forming unit).

[0184] [Anti-adhesion plate]

[0185] The anti-adhesion plate 410 is arranged to surround a processing space 41 in which a film is formed on the workpiece 10 by the film forming unit 40, and prevent the film forming material from adhering to the chamber 20. Figure 5(A) to Figure 5(C) As shown in FIG. 1 , the anti-adhesion plate 410 includes a main body 411, an expansion portion 412, a heat conducting portion 413, and a shielding portion 414. The main body 411 is a cylindrical member surrounding the processing space 41 including the target 42. The expansion portion 412 is a plate body (see FIG. 1 ) formed by expanding the outer edge of one end (upper end) of the main body 411 in a direction parallel to the rotation plane of the rotating table 31 (the surface of the rotating table 31). Figure 2 and Figure 3 The outer shape of the expansion portion 412 is a fan-shaped shape whose width increases from the rotation center of the rotating table 31 toward the outer periphery. In addition, at least the arc portion of the fan-shaped expansion portion 412 is a shape along the inner wall of the chamber 20.

[0186] The lower end of the anti-adhesion plate 410 is open to the gap through which the workpiece 10 carried on the turntable 31 passes, and faces the loading surface of the workpiece 10 in the turntable 31. The processing space 41 for processing the workpiece 10 using the film forming section 40 is divided by the anti-adhesion plate 410. That is, the film forming section 40 has a processing space 41 that is smaller than the chamber 20. The anti-adhesion plate 410 suppresses the sputtering gas G1 and the film forming material used in the film forming section 40 from diffusing into the chamber 20. In the film forming section 40, it is sufficient to adjust the pressure in the processing space 41 that is divided into a smaller space than the chamber 20, so the pressure can be easily adjusted, and the discharge of the plasma can be stabilized.

[0187] like Figure 2 and Figure 3 As shown, the anti-adhesion plate 410 is not in contact with the top surface 20a, so a gap is formed between the upper part of the anti-adhesion plate 410 and the top surface 20a to prevent collision when the top surface 20a is opened or closed. An expansion portion 412 is provided at the upper part of the anti-adhesion plate 410, so that the narrow space formed between the upper part of the anti-adhesion plate 410 and the inner wall of the top surface 20a of the chamber 20 is expanded in the horizontal direction, making it difficult for the film-forming material to leak out of the processing space 41. In addition, a partition such as a partition wall can be further provided near the side of the anti-adhesion plate 410 to reduce the leakage of the sputtering gas G1 and the film-forming material.

[0188] The heat conducting part 413 is a plate body formed by expanding the outer edge of the other end (lower end) of the main body 411 in a direction parallel to the rotation plane of the rotating table 31 (the surface of the rotating table 31). That is, the heat conducting part 413 with an area expanded outward is provided at the bottom of the anti-adhesion plate 410. The outer shape of the heat conducting part 413 is a fan-shaped shape whose width expands from the rotation center of the rotating table 31 toward the periphery (refer to Figure 6(A) to Figure 6(C) ) In addition, at least the arc portion of the fan-shaped heat transfer portion 413 is shaped along the inner wall of the chamber 20 .

[0189] like Figure 2 and Figure 3 As shown, the heat conducting part 413 does not contact the rotating table 31, so a gap is formed between the lower part of the anti-adhesion plate 410 and the rotating table 31 to allow the rotating table 31 to rotate. The heat conducting part 413 expanding outward is provided at the lower part of the anti-adhesion plate 410, so that the narrow space formed between the lower part of the anti-adhesion plate 410 and the surface of the rotating table 31 expands in the horizontal direction, making it difficult for the film forming material to leak out of the processing space 41.

[0190] like Figure 1 As shown in FIG. 5(A), the shielding portion 414 is a plate body that narrows the opening 411a at the lower end of the main body 411 to a predetermined range. The shielding portion 414 extends inward from the lower end of the main body 411 to form an arc-shaped opening 411a that is the same length as the width (maximum length in the short side direction) of the workpiece 10 when viewed from above and is along the conveying path L.

[0191] The anti-adhesion plate 410 is detachably disposed in the chamber 20. More specifically, Figure 2 and Figure 3 As shown in FIG. 4 , the bottom of the anti-adhesion plate 410, which is located outside the outer periphery of the rotating table 31, is supported by a cooling block 420 described later. Figure 1 As shown, the inner circumference of the anti-adhesion plate 410 is attached to the ring 415 disposed above the center of the rotating table 31 via a fixing plate 415a and a fastening member such as bolts. The ring 415 is fixed in the chamber 20 by a plurality of support portions 416. That is, one end of each support portion 416 is fixed to the ring 415, and the other end of each support portion 416 extends radially toward the side surface 20c of the chamber 20 and is fixed to the inner wall surface of the side surface 20c, thereby supporting the ring 415 in the chamber 20. In addition, Figure 2 , Figure 3 In FIG. 4 , the support portion 416 is indicated by a dot-dash line.

[0192] [Cooling Block]

[0193] like Figure 2 and Figure 3 As shown, the cooling block 420 is disposed in the chamber 20 (refer to Figure 2 , Figure 3 ), and a block-shaped component for cooling the anti-adhesion plate 410. Figure 5(A) to Figure 5(C) and Figure 6(A) to Figure 6(C) As shown, the cooling block 420 is a solid rectangular parallelepiped metal. For example, aluminum with good heat conduction can be used as the material of the cooling block 420. Figure 1 to Figure 3As shown, the cooling block 420 is arranged in the space between the outer periphery of the rotating table 31 and the inner wall of the side surface 20c of the chamber 20. A plurality of cooling blocks 420 are arranged. The cooling blocks 420 of this embodiment are arranged along the space between the outer periphery of the rotating table 31 and the inner wall of the side surface 20c of the chamber 20. In this embodiment, two cooling blocks 420 are arranged relative to one anti-adhesion plate 410. In addition, as shown in FIG. Figure 1 As shown, each cooling block 420 is fan-shaped when viewed from above. More specifically, the inner wall side of the side 20c of the chamber 20 in the cooling block 420 is an arc shape along the inner wall of the side 20c. In addition, the rotating table 31 side of the cooling block 420 is an arc shape along the outer diameter of the rotating table 31. That is, each cooling block 420 has two arc-shaped side surfaces.

[0194] The cooling block 420 has a contact surface 421 and a flow path 422. The contact surface 421 is in direct contact with the anti-adhesion plate 410. The cooling block 420 cools the anti-adhesion plate 410 by bringing the contact surface 421 into contact. That is, the cooling block 420 releases the heat from the anti-adhesion plate 410 to the outside of the chamber 20. The contact portion of the contact surface 421 is the bottom of the anti-adhesion plate 410. More specifically, the contact surface 421 is the upper surface of the cooling block 420, which is fixed by fasteners such as bolts to contact the heat conductive portion 413 of the anti-adhesion plate 410. In addition, it is not limited to fastening by fasteners, and only the heat conductive portion 413 of the anti-adhesion plate 410 may be brought into contact with the contact surface 421. The bottom surface of the cooling block 420 is supported on the bottom surface 20b of the chamber 20.

[0195] The flow path 422 is a flow path for the cooling medium to flow. As shown in FIG. 5(B), the flow path 422 is provided near the contact surface 421 and has a passage parallel to the contact surface 421. Both ends of the passage are connected to the inlet 422a and the outlet 422b provided at the bottom of the cooling block 420. Figure 2 and Figure 3As shown, one of the inlet ports 422a of the two cooling blocks 420 is connected to a cooling device 423 that supplies a cooled cooling medium through a joint 422c and a pipe 422d provided outside the chamber 20, while the chamber 20 is maintained airtight by a sealing member such as an O-ring. The joint 422c is formed integrally with the cooling block 420. A sealing member is provided around the bottom surface of the cooling block 420, that is, the joint 422c, and the cooling block 420 is connected to the bottom surface 20b of the chamber 20 through the sealing member. A through hole 22 is provided on the bottom surface 20b of the chamber 20, and the joint 422c is inserted into the through hole 22, a part of which is exposed outside the chamber 20, and a pipe 422d is connected to the part. As a result, the joint 422c and the pipe 422d are located on the atmosphere side. The cooling device 423 of this embodiment uses water as a cooling medium. As the cooling device 423, for example, a cooler device that performs cooling by a cooler while circulating a cooling medium such as cooling water can be used.

[0196] like Figure 6(A) to Figure 6(C) As shown, the adjacent outflow ports 422b and inflow ports 422a of the two cooling blocks 420 are connected to each other via a joint 422c and a pipe 422d provided outside the chamber 20, while the chamber 20 is maintained airtight by a sealing member such as an O-ring, so that the cooling medium can flow. That is, the cooling medium discharged from the flow path 422 of one cooling block 420 flows into the other cooling block 420. Furthermore, the other outflow ports 422b of the two cooling blocks 420 are connected to the cooling device 423 via a joint 422c and a pipe 422d provided outside the chamber 20, while the chamber 20 is maintained airtight by a sealing member such as an O-ring, etc.

[0197] Thus, the cooling medium passes through the cooling block 420, and the cooling medium that has absorbed heat from the anti-adhesion plate 410 is cooled by the cooling device 423, and returns to the cooling block 420, and absorbs heat again from the anti-adhesion plate 410. In this way, continuous cooling can be achieved by circulating the cooling medium in the cooling block 420. The pipe 422d is provided outside the chamber 20 via the joint 422c, so that it is not exposed to the heat inside the chamber 20.

[0198] [Membrane treatment department]

[0199] The film processing unit 50 generates an inductively coupled plasma in the processing space 59 into which the process gas G2 is introduced, and chemical species in the plasma react chemically with the film deposited on the workpiece 10 by the film forming unit 40, thereby generating a compound film. Figure 1 As shown, the film processing unit 50 is disposed in a region other than the region where the film forming unit 40 is disposed in the chamber 20. That is, the film processing unit 50 has a processing space 59 that is smaller than the chamber 20 and separated from the processing space 41.

[0200] The introduced process gas G2 contains, for example, oxygen or nitrogen. In addition to oxygen or nitrogen, the process gas G2 may also contain an inert gas such as argon. The process gas G2 of this embodiment is a gas containing nitrogen. The film processing unit 50 of this embodiment is a nitridation processing unit, that is, an inductively coupled plasma is generated in the processing space 59 into which the process gas G2 containing nitrogen is introduced, and nitrogen atoms in the plasma are chemically reacted with the film deposited on the workpiece 10 by the film forming unit 40, thereby generating a nitride film.

[0201] like Figure 2 As shown, the film processing unit 50 has a plasma generator P2 including a cylindrical body 51 , a window member 52 , an antenna 53 , a radio frequency (RF) power source 54 , a matching box 55 , and a process gas introduction unit 58 .

[0202] The cylindrical body 51 is as follows Figure 1 and Figure 2 The cylindrical body 51 is shown as a cylindrical body with openings at both ends. The cylindrical body 51 is embedded in the top surface 20a of the chamber 20 in a manner that one of the openings is separated and faces the turntable 31 side, and protrudes toward the internal space of the chamber 20. The cylindrical body 51 is made of the same material as the turntable 31.

[0203] Inside the cylinder of the cylindrical body 51, a window member 52 is provided in a manner to block the opening of the cylindrical body 51. In the film processing unit 50, the upper surface of the turntable 31, the opening inside the end of the cylindrical body 51 protruding near the turntable 31, and the space surrounded by the window member 52 form a processing space 59. A process gas G2 containing nitrogen is introduced into the processing space 59 to perform plasma. The workpiece 10 circulated and transported by the turntable 31 repeatedly passes through the processing space 59, thereby performing nitriding treatment.

[0204] At this time, the cylindrical body 51 divides the processing space 59 from the space of the chamber 20, thereby suppressing the diffusion of the process gas G2 into the chamber 20. Since the pressure in the divided processing space 59 can be adjusted in this way, the pressure can be easily adjusted and the discharge of plasma can be stabilized.

[0205] The window member 52 is a flat plate of a dielectric such as quartz having a shape roughly similar to the horizontal cross section of the cylindrical body 51. The window member 52 is provided in a manner to block the opening of the cylindrical body 51, and serves as a partition that divides the processing space 59 in the chamber 20 into which the process gas G2 containing nitrogen is introduced and the interior of the cylindrical body 51. In addition, the window member 52 may be a dielectric such as alumina, or a semiconductor such as silicon.

[0206] The antenna 53 is a conductor wound in a coil shape, and is arranged in the inner space of the cylindrical body 51 isolated from the processing space 59 in the chamber 20 by the window member 52, and generates an electric field by flowing an alternating current. It is ideal that the antenna 53 is arranged near the window member 52 so that the electric field generated by the antenna 53 is efficiently introduced into the processing space 59 through the window member 52. The antenna 53 is connected to an RF power supply 54 that applies a high-frequency voltage. A matching box 55 as a matching circuit is connected in series on the output side of the RF power supply 54. The matching box 55 matches the impedance of the input side and the output side, thereby stabilizing the discharge of the plasma.

[0207] like Figure 2 As shown, the process gas introduction part 58 introduces the process gas G2 into the processing space 59. The process gas introduction part 58 has a supply source of the process gas G2 such as a gas cylinder (not shown), a pipe 57, and a gas introduction port 56. The pipe 57 is connected to the supply source of the process gas G2, penetrates the chamber 20 while hermetically sealing the chamber 20, and extends to the inside of the chamber 20, and its end is opened as the gas introduction port 56.

[0208] The gas introduction port 56 opens into the processing space 59 between the window member 52 and the turntable 31 , and introduces the process gas G2 .

[0209] In such a film processing unit 50, a high-frequency voltage is applied to the antenna 53 from the RF power supply 54. As a result, a high-frequency current flows in the antenna 53, and an electric field is generated by electromagnetic induction. The electric field is introduced into the processing space 59 through the window member 52, and an inductively coupled plasma is generated in the process gas G2. At this time, nitrogen chemical species including nitrogen atoms are generated, which collide with the film on the workpiece 10 and are bonded to the atoms constituting the film. As a result, the film on the workpiece is nitrided to form a nitride film as a compound film.

[0210] In addition, in the film forming unit 40A, the film processing unit 50 for nitridation is provided while using a material containing GaN as the target 42 for the following reason. That is, Ga has a low melting point and is in a liquid state at normal temperature and pressure, so in order to form a solid target 42, it is necessary to contain nitrogen (N). Therefore, it is also considered to simply increase the nitrogen content of the target 42 and form a film only by sputtering the target 42.

[0211] Here, in order to increase the film forming rate, DC discharge sputtering is preferred to RF discharge. However, if a large amount of nitrogen is contained in the target 42, the surface becomes an insulator. In the target 42 whose surface becomes an insulator, DC discharge may not be generated.

[0212] Therefore, there is a limit to the amount of nitrogen that can be contained in the GaN target 42, and the nitridation of Ga in the target 42 remains insufficient. That is, the target 42 made of GaN contains Ga atoms whose bonds with N (nitrogen) atoms are defective.

[0213] If the formed GaN film has a low nitrogen content and has nitrogen defects, the crystallinity of the film deteriorates and the flatness is impaired, so it is necessary to make up for the insufficient nitrogen. Therefore, it is also considered to add nitrogen to the sputtering gas G1 introduced into the film forming unit 40 for sputtering, but the surface of the target 42 is nitrided and the surface may become an insulator. Therefore, in order to make up for the insufficient nitrogen, the film forming unit 40A cannot add a sufficient amount of nitrogen to the sputtering gas G1.

[0214] Therefore, in order to compensate for the insufficient nitrogen in the GaN film formed by the film forming unit 40A, after the film is formed by the film forming unit 40A, nitridation is further performed by the film processing unit 50. As a result of the nitridation treatment during film formation, the nitrogen content of the film on the workpiece 10 can be increased, and a GaN film without nitrogen defects can be formed.

[0215] [Surface treatment department]

[0216] The surface treatment section 60 treats the surface of the workpiece 10 being circulated and transported by the rotating table 31 and the surface of the film deposited by the film forming section 40. The treatment performed by the surface treatment section 60 is to remove the oxide film on the surface of the workpiece 10 before the film is deposited by the film forming section 40, remove organic matter, and flatten the surface of the film being formed on the workpiece.

[0217] The so-called film being formed on the workpiece 10 is a film formed on the workpiece 10 before reaching a desired film thickness, specifically, a compound film on the workpiece 10 processed by the film processing unit 50 or a film on the workpiece 10 formed by the film forming unit 40 .

[0218] like Figure 1 As shown, the conveying unit 30 is arranged along Figure 1 The conveying unit 30 is rotated as indicated by the arrows drawn in the respective parts, so that the workpiece 10 is circulated and transported in a manner that allows the workpiece 10 to pass through the film forming unit 40, the film treatment unit 50, and the surface treatment unit 60 in order. Thus, the surface treatment unit 60 can irradiate ions on the compound film on the workpiece 10 that has been treated by the film treatment unit 50 to treat the surface. Alternatively, when the film forming unit 40, the surface treatment unit 60, and the film treatment unit 50 are arranged in this order in the conveying direction of the workpiece 10, the conveying unit 30 circulates and transports the workpiece 10 in a manner that allows the workpiece 10 to pass through the film forming unit 40, the surface treatment unit 60, and the film treatment unit 50 in order, so that the surface treatment unit 60 can irradiate ions on the film on the workpiece 10 formed by the film forming unit 40 to treat the surface.

[0219] In this way, by arranging the film forming unit 40, the surface treatment unit 60, and the film treatment unit 50 in the conveying direction of the workpiece 10 or by combining the arrangement order or the arrangement, it is possible to set which film is to be subjected to the surface treatment by the surface treatment unit 60. For example, if the film forming unit 40, the surface treatment unit 60, the film treatment unit 50, and the surface treatment unit 60 are arranged and the workpiece 10 is conveyed in this order, the surface treatment of the film deposited by the film forming unit 40 and the surface treatment of the film after the film treatment are performed on the film can be performed in one cycle.

[0220] The surface treatment unit 60 is disposed in a region other than the region where the film forming unit 40 and the film treatment unit 50 are disposed in the chamber 20. Figure 3 As shown, the surface treatment unit 60 includes a plasma generator P3 , and the plasma generator P3 includes a cylindrical electrode 61 , a shield 62 , a process gas introduction unit 65 , and an RF power supply 66 .

[0221] like Figure 1 and Figure 3 As shown in the figure, the cylindrical electrode 61 is a box-shaped square cylindrical electrode arranged from the upper part to the inside of the chamber 20. The shape of the cylindrical electrode 61 is not particularly limited, but in the present embodiment, it is roughly fan-shaped when viewed from above. The cylindrical electrode 61 has an opening 61a at the bottom and is blocked at the other end. The outer edge of the opening 61a, that is, the lower end of the cylindrical electrode 61, faces the upper surface of the workpiece 10 on the rotating table 31 with a small gap therebetween.

[0222] Therefore, the cylindrical electrode 61 is attached to the opening 21a provided in the ceiling 20a of the chamber 20 via the insulating member 61c so that one end having the opening 61a faces the rotating table 31. The side wall of the cylindrical electrode 61 extends toward the inside of the chamber 20.

[0223] A flange 61b extending outward is provided at the end of the cylindrical electrode 61 opposite to the opening 61a. The insulating member 61c is fixed between the flange 61b and the periphery of the opening 21a of the chamber 20, thereby keeping the interior of the chamber 20 airtight. The insulating member 61c is not limited to a specific material as long as it has insulating properties, and may include materials such as polytetrafluoroethylene (PTFE).

[0224] The opening 61a of the cylindrical electrode 61 is arranged at a position facing the conveying path L of the rotating table 31. The rotating table 31, as the conveying unit 30, conveys the tray 11 carrying the workpiece 10 and passes through the position facing the opening 61a. In addition, the opening 61a of the cylindrical electrode 61 is larger than the size of the tray 11 in the radial direction of the rotating table 31.

[0225] As described above, the cylindrical electrode 61 passes through the opening 21a of the chamber 20, and a portion of the cylindrical electrode 61 is exposed to the outside of the chamber 20. Figure 3 As shown, the portion of the cylindrical electrode 61 exposed to the outside of the chamber 20 is covered by a housing 61d. The insulating member 61c and the housing 61d together keep the space inside the chamber 20 airtight. The portion of the cylindrical electrode 61 located inside the chamber 20, that is, the periphery of the side wall, is covered by a shield 62.

[0226] The shield 62 is a fan-shaped square tube coaxial with the cylindrical electrode 61, and is larger than the cylindrical electrode 61. The shield 62 is connected to the chamber 20. Specifically, the shield 62 is erected from the edge of the opening 21a of the chamber 20, and the end extending toward the inside of the chamber 20 is located at the same height as the opening 61a of the cylindrical electrode 61. The shield 62 functions as a cathode in the same manner as the chamber 20, and therefore may include a conductive metal member with low resistance. The shield 62 may be formed integrally with the chamber 20, or may be mounted on the chamber 20 using a fixed metal fitting or the like.

[0227] The shield 62 is provided to stably generate plasma in the tubular electrode 61. The side walls of the shield 62 are provided to extend approximately parallel to the side walls of the tubular electrode 61 with a predetermined gap therebetween. If the gap becomes too large, the electrostatic capacitance becomes small, or the plasma generated in the tubular electrode 61 enters the gap, so it is ideal that the gap is as small as possible. However, even if the gap becomes too small, the electrostatic capacitance between the tubular electrode 61 and the shield 62 becomes large, which is not good. The size of the gap can be appropriately set according to the electrostatic capacitance required for the generation of plasma. In addition, Figure 3 Only two side wall surfaces extending in the radial direction of the shield 62 and the cylindrical electrode 61 are shown in the figure, but a gap having the same size as the side wall surfaces in the radial direction is also provided between the two side wall surfaces extending in the circumferential direction of the shield 62 and the cylindrical electrode 61 .

[0228] In addition, a process gas introduction part 65 is connected to the cylindrical electrode 61. In addition to the piping, the process gas introduction part 65 also has a gas supply source, a pump, a valve, etc. of the process gas G3 (not shown). The process gas G3 is introduced into the cylindrical electrode 61 through the process gas introduction part 65. The process gas G3 can be appropriately changed according to the purpose of the treatment. For example, the process gas G3 may also contain an inert gas such as argon, oxygen or nitrogen, or may contain oxygen or nitrogen in addition to argon.

[0229] The cylindrical electrode 61 is connected to an RF power supply 66 for applying a high frequency voltage. A matching box 67 as a matching circuit is connected in series to the output side of the RF power supply 66. The RF power supply 66 is also connected to the chamber 20. When a voltage is applied from the RF power supply 66, the cylindrical electrode 61 functions as an anode, and the chamber 20, the shield 62, the rotating table 31, and the tray 11 function as cathodes. That is, they function as electrodes for back sputtering. Therefore, the rotating table 31 and the tray 11 have conductivity and are in contact with each other in an electrically connected manner.

[0230] The matching box 67 matches the impedance of the input side and the output side, thereby stabilizing the discharge of the plasma. In addition, the chamber 20 or the rotating table 31 is grounded. The shield 62 connected to the chamber 20 is also grounded. The RF power supply 66 and the process gas introduction part 65 are connected to the cylindrical electrode 61 via a through hole provided in the housing 61d.

[0231] When argon gas as the process gas G3 is introduced into the cylindrical electrode 61 from the process gas introduction part 65 and a high frequency voltage is applied to the cylindrical electrode 61 from the RF power supply 66, capacitively coupled plasma is generated, the argon gas is converted into plasma, and electrons, ions, radicals, etc. are generated. The ions in the generated plasma are irradiated onto the film being formed on the workpiece 10.

[0232] That is, the surface treatment unit 60 has a cylindrical electrode 61 having an opening 61a at one end and into which a process gas G3 is introduced, and an RF power supply 66 for applying a high-frequency voltage to the cylindrical electrode 61. The conveying unit 30 conveys the workpiece 10 to the position directly below the opening 61a and allows the workpiece 10 to pass through, thereby introducing ions into the film formed on the workpiece 10 and performing ion irradiation. In the surface treatment unit 60, in order to introduce ions into the film formed on the workpiece 10, a negative bias voltage is applied to the tray 11 on which the workpiece 10 is placed and the rotating table 31.

[0233] By using the cylindrical electrode 61 like the surface treatment unit 60, even if a high-frequency voltage is not applied to the tray 11 or the rotating table 31, a desired negative bias voltage can be applied to the tray 11 and the rotating table 31 on which the workpiece 10 is placed, while these components are maintained at ground potential, thereby introducing ions into the formed thin film. As a result, there is no need to add a structure for applying a high-frequency voltage to the tray 11 or the rotating table 31, or to consider the area ratio of the electrode that becomes the anode and the area of ​​other components surrounding the electrode that becomes the cathode in order to obtain a desired bias voltage, and the device design becomes easy.

[0234] Therefore, even when film formation and ion irradiation are repeated while the workpiece 10 is moved, ions can be introduced into the film formed on the workpiece 10 with a simple structure to flatten the film being formed on the workpiece 10 .

[0235] The processing space 64 for surface treatment by the surface treatment unit 60 is divided in the chamber 20 by the cylindrical electrode 61. The diffusion of the process gas G3 into the chamber 20 can be suppressed by the cylindrical electrode 61. That is, the surface treatment unit 60 has a processing space 64 that is smaller than the chamber 20 and separated from the processing space 41 and the processing space 59. It is sufficient to adjust the pressure in the processing space 64 that is divided into a space smaller than the chamber 20, so the pressure can be easily adjusted, and the discharge of the plasma can be stabilized. In addition, the arrangement order and number of the film forming unit 40, the film treatment unit 50, and the surface treatment unit 60 are not limited to a specific arrangement order and number. As long as the desired treatment can be performed on the workpiece 10 that is circulated and transported.

[0236] Thus, the film processing unit 50 has the function of converting nitrogen gas into plasma to generate chemical species including nitrogen atoms, and chemically reacting with the film formed on the workpiece 10, thereby generating a compound film. In the film processing unit 50, an inductively coupled plasma with a high plasma density is used, so that the chemical species in the plasma and the film formed on the workpiece 10 by the film forming unit 40 can efficiently chemically react, thereby generating a compound film.

[0237] The surface treatment unit 60 has the following functions: a negative bias voltage is applied to the tray 11 and the rotating table 31 on which the workpiece 10 is placed, and ions are introduced into the film formed on the workpiece 10 to flatten the film. In the surface treatment unit 60, the cylindrical electrode 61 is used, so that ions can be easily introduced into the film formed on the workpiece 10 to flatten the film.

[0238] [Transfer Department]

[0239] like Figure 1 As shown, the transfer unit 70 is a device that transfers the workpiece 10 into and out of the chamber 20 through the load lock chamber 71 while maintaining the vacuum in the chamber 20. The workpiece 10 is transferred between the transfer unit 70 and the rotary table 31 by a transfer mechanism (not shown).

[0240] [Control device]

[0241] The control device 90 controls various components constituting the film forming apparatus 1, such as the exhaust unit 23, the sputtering gas introduction unit 49, the process gas introduction unit 58, the process gas introduction unit 65, the power supply unit 46, the RF power supply 54, the RF power supply 66, the motor 32, and the transfer unit 70. The control device 90 is a processing device including a programmable logic controller (PLC) or a central processing unit (CPU), and stores a program describing control contents.

[0242] For example, the control device 90 can control the initial exhaust pressure of the film forming device 1, the power applied to the target 42, the antenna 53 and the cylindrical electrode 61, the flow rate of the sputtering gas G1, the process gas G2, and the process gas G3, the introduction time and exhaust time, the film forming time, the surface treatment time, the heating temperature of the heating unit 34, the heating time, the rotation speed of the motor 32, the cooling temperature, the cooling time, etc. Thus, the control device 90 can cope with a variety of film forming specifications.

[0243] Furthermore, the control device 90 controls the heating temperature of the heating section 34. Therefore, the control device 90 has a temperature sensor, a temperature regulator, and an operating section. The temperature sensor detects the temperature of the heating section 34 and sends a signal of the detected temperature value to the temperature regulator. The temperature regulator compares the detected temperature value with a preset target temperature value and sends an operating signal to the operating section. Based on the operating signal, the operating section applies power to the annular electrode 351a or stops applying power via the brush electrode 352a to increase or decrease the temperature of the heating section 34. In this way, the control device 90 controls the temperature of the heating section 34 by performing feedback control. The temperature sensor can be, for example, a thermocouple that is in contact with the heating section 34 and can detect the temperature. The operating section can be, for example, a voltage regulator such as a silicon controlled rectifier (SCR).

[0244] The heating temperature of the heating unit 34 is controlled so that the workpiece 10 rises to the target temperature in stages. That is, the heating unit 34 is configured to be able to perform temperature adjustment so that the temperature of the workpiece 10 rises in stages. The so-called "in stages" has the same meaning as "gradually", "slowly" and "not sharply", which means that the time from the start of heating to the reaching of the target temperature is a time that can prevent the workpiece 10 from being damaged. In addition, the control device 90 can adjust the heating temperature of the heating unit 34 according to the type of workpiece 10. Moreover, the heating temperatures of multiple heating units 34 can be adjusted individually. Thereby, different types of workpieces 10 such as sapphire substrates and silicon wafers can be placed on the rotating table 31 and processed simultaneously and in parallel.

[0245] [action]

[0246] Next, in Figures 1 to 6 (A) ~Refer to Figure 6(C) Figure 7 8(A) and 8(B) illustrate the operation of the film forming apparatus 1 controlled by the control device 90. Figure 7 1 is a flow chart of a film forming process performed by the film forming apparatus 1 of this embodiment. In addition, as described below, a film forming method for performing film formation by the film forming apparatus 1 is also an embodiment of the present invention.

[0247] The film forming process is a process of alternately stacking AlN films and GaN films on the workpiece 10 to form a GaN layer. The crystal lattice of a silicon wafer or a sapphire substrate is different from that of GaN, so when a GaN film is directly formed, there is a problem of reduced crystallinity of GaN. In order to eliminate this mismatch in the crystal lattice, a buffer layer is formed by alternately stacking AlN films and GaN films, and a GaN layer is formed on the buffer layer. The film forming device 1 can be used in the following situations: for example, in the manufacture of a horizontal metal oxide semiconductor field effect transistor (MOSFET) or a light emitting diode (LED), a buffer layer and a GaN layer are formed on a silicon wafer.

[0248] For example, FIG8(A) shows the stacked structure of an LED, wherein a buffer layer 10a, a GaN layer 10b including an n-channel, a buffer layer 10a, a GaN layer 10c including a p-channel, a light-emitting layer 10d, and a transparent conductive film 10e are stacked on a silicon workpiece 10. The transparent conductive film 10e is an indium tin oxide (ITO) film. In addition, the electrodes are omitted from the illustration. In addition, FIG8(B) shows the detailed structure of the buffer layer 10a.

[0249] First, the chamber 20 is exhausted from the exhaust port 21 through the exhaust unit 23, and the pressure is always reduced to a specified pressure. In addition, the heating unit 34 starts heating together with the exhaust. At the same time, the turntable 31 starts to rotate. The chamber 20 is heated by radiation from the rotating heating unit 34 (step S101). By heating together with the exhaust, the detachment of residual gases such as water molecules or oxygen molecules in the chamber 20 is promoted. As a result, it is difficult for residual gases to mix as impurities during film formation, and the crystallinity of the film is improved. After the oxygen concentration in the chamber 20 is detected to be below the specified value using a gas analysis device such as Q-Mass, the rotation of the turntable 31 is stopped.

[0250] Next, the pallet 11 carrying the workpiece 10 is carried into the load lock chamber 71 of the transfer unit 70 (step S102). The rotating table 31 moves the empty holding areas HA to the carry-in / out port 24 in sequence. Each holding area HA individually holds the pallet 11 carried in by the transfer mechanism. In this way, the pallet 11 carrying the workpiece 10 is placed in all the holding areas HA on the rotating table 31. At this point, the workpiece 10 is carried into the chamber 20.

[0251] In addition, the cooling device 423 is operated to start cooling the cooling medium and supplying the cooling block 420, thereby the cooling medium circulates in the flow path of the cooling block 420 (step S103). The rotating table 31 starts rotating again, and the workpiece 10 is heated by the heating unit 34, and the oxide film on the surface of the workpiece 10 is removed by the surface treatment unit 60 (step S104). At this time, the absorbing member 12 is heated by the heating unit 34, and the absorbing member 12 emits electromagnetic waves of a wavelength that the workpiece 10 easily absorbs, thereby promoting the heating of the workpiece 10 on each tray 11.

[0252] In addition, the workpiece 10 passes through the bottom of the surface treatment unit 60 by the rotation of the rotating table 31. In the surface treatment unit 60, the process gas G3 is introduced into the cylindrical electrode 61 from the process gas introduction unit 65, and a high-frequency voltage is applied to the cylindrical electrode 61 from the RF power supply 66. By applying the high-frequency voltage, the process gas G3 is converted into plasma, and ions in the plasma collide with the surface of the workpiece 10 passing through the bottom of the opening 61a, thereby removing the oxide film from the surface of the workpiece 10.

[0253] The workpiece 10 repeatedly passes under the surface treatment section 60, and after being treated by the surface treatment section 60 for a predetermined time in which the oxide film is removed, which is determined in advance by experiments, the buffer layer is formed by alternately and repeatedly forming an AlN film by the film forming section 40B and the film treatment section 50, and forming a GaN film by the film forming section 40A and the film treatment section 50. As described above, a target 42 composed of a material containing Ga and GaN is mounted on the film forming section 40A, and a target 42 composed of a material containing Al is mounted on the film forming section 40B. In addition, during the film forming process, the film forming material adheres to the inner surface of the anti-adhesion plate 410. The anti-adhesion plate 410 is heated by the heating section 34, but the anti-adhesion plate 410 is cooled by the cooling block 420, so that it is not easy to peel off due to thermal expansion of the film forming material accumulated on the anti-adhesion plate 410.

[0254] First, an AlN film is formed on the workpiece 10 using the film forming unit 40B and the film processing unit 50 (step S105). That is, the sputtering gas inlet 49 supplies the sputtering gas G1 into the processing space 41 of the film forming unit 40B via the gas inlet port 47. The sputtering gas G1 is supplied to the vicinity of the target 42 including Al. The power supply unit 46 applies a voltage to the target 42 of the film forming unit 40B. Thereby, the sputtering gas G1 is plasmatized. The ions generated by the plasma collide with the target 42 and knock out sputtering particles containing Al atoms. By the rotation of the turntable 31, the workpiece 10 repeatedly passes under the film forming unit 40B.

[0255] When the workpiece 10 passes through the film forming section 40B, a thin film is formed in which sputtered particles containing Al atoms are deposited on the surface. In this embodiment, a film thickness that can contain one to two Al atoms in the thickness direction can be deposited each time the workpiece 10 passes through the film forming section 40B.

[0256] The workpiece 10 that has passed through the film forming section 40B passes through the film processing section 50, and Al atoms of the film are nitrided in the process. That is, the process gas introduction section 58 supplies a process gas G2 containing nitrogen through the gas introduction port 56. The process gas G2 containing nitrogen is supplied to the processing space 59 sandwiched by the window member 52 and the rotating table 31. The RF power supply 54 applies a high-frequency voltage to the antenna 53.

[0257] The electric field generated by the antenna 53 through which the high-frequency current flows by the application of the high-frequency voltage is introduced into the processing space 59 through the window member 52. Then, the process gas G2 containing nitrogen gas supplied to the space is excited by the electric field to generate plasma. The nitrogen chemical species generated by the plasma collide with the Al thin film on the workpiece 10, thereby bonding with the Al atoms to form a fully nitrided AlN film.

[0258] The workpiece 10 on which the AlN film is formed passes through the film processing section 50 by the rotation of the turntable 31 and goes to the surface processing section 60, and the AlN film is irradiated with ions by the surface processing section 60 (step S106). That is, the process gas introduction section 65 supplies the process gas G3 containing argon gas through the pipe. The process gas G3 is supplied to the space inside the cylindrical electrode 61 surrounded by the cylindrical electrode 61 and the turntable 31. When a voltage is applied to the cylindrical electrode 61 by the RF power supply 66, the cylindrical electrode 61 acts as an anode, and the chamber 20, the shield 62, the turntable 31, and the tray 11 act as a cathode, exciting the process gas G3 supplied to the space inside the cylindrical electrode 61 to generate plasma. Furthermore, the argon ions generated by the plasma collide with the AlN film formed on the workpiece 10, thereby causing the particles to move toward the sparse portion in the film, thereby flattening the film surface.

[0259] Thus, in step S105 to step S106, the film forming process is performed by the workpiece 10 passing through the processing space 41 of the film forming section 40B in operation, and the nitriding process is performed by the workpiece 10 passing through the processing space 59 of the film processing section 50 in operation. Furthermore, the AlN film formed on the workpiece 10 is flattened by the workpiece 10 passing through the space in the cylindrical electrode 61 of the surface processing section 60 in operation. In addition, the meaning of "in operation" is the same as that the plasma generation operation of generating plasma is in progress in the processing space of each section 40, 50, 60.

[0260] The rotating table 31 continues to rotate until an AlN film of a specified thickness is formed on the workpiece 10, that is, until a specified time obtained in advance through simulation or experiment has passed (step S107 No). In other words, the workpiece 10 continues to circulate in the film forming section 40 and the film processing section 50 until an AlN film of a specified thickness is formed. In addition, it is preferred to perform nitridation each time Al is deposited with a film thickness at the atomic level, so it is preferred to determine the film forming speed, the nitridation speed, and the rotation speed of the rotating table 31 (the passing speed of each processing section) to achieve a balance between film forming and nitridation. For example, the rotation speed of the rotating table 31 is set to a speed of about 50 rpm to 60 rpm.

[0261] When a predetermined time has passed (Yes in step S107 ), the operation of the film forming unit 40B is first stopped. Specifically, the application of voltage to the target 42 by the power supply unit 46 is stopped.

[0262] Next, a GaN film is formed on the workpiece 10 using the film forming unit 40A and the film processing unit 50 (step S108). Then, the GaN film is flattened (step S109). That is, by using the sputtering gas inlet 49 to supply the sputtering gas G1 around the target 42 of the film forming unit 40A, and using the power supply unit 46 to apply voltage to the target 42 of the film forming unit 40A, the sputtering gas G1 supplied to the processing space 41 of the film forming unit 40A is plasmatized. The ions generated by the plasma collide with the target 42 and knock out sputtering particles containing Ga atoms. By the rotation of the turntable 31, the workpiece 10 repeatedly passes under the film forming unit 40A.

[0263] The workpiece 10 that has passed through the film forming section 40A passes through the film processing section 50, and Ga atoms in the film are nitrided during the process. That is, the process gas introduction section 58 supplies a process gas G2 containing nitrogen through the gas introduction port 56. The process gas G2 containing nitrogen is supplied to a processing space 59 sandwiched by the window member 52 and the rotating table 31. The RF power supply 54 applies a high-frequency voltage to the antenna 53.

[0264] The electric field generated by the antenna 53 through which the high-frequency current flows by the application of the high-frequency voltage is introduced into the processing space 59 through the window member 52. Then, the process gas G2 containing nitrogen gas supplied to the space is excited by the electric field to generate plasma. The chemical species of nitrogen generated by the plasma collide with the GaN thin film on the workpiece 10, thereby bonding with Ga atoms to form a fully nitrided GaN film.

[0265] The workpiece 10 having passed through the film processing unit 50 and formed with the GaN film proceeds to the surface processing unit 60, where ions are irradiated to the GaN film (step S108). The particles collide with the GaN film formed on the workpiece 10, and move toward the sparse portion of the film, thereby flattening the film surface.

[0266] Thus, a thin film is formed on the surface of the AlN film in which the sputtered particles including Ga atoms are deposited. In this embodiment, each time the particles pass through the film forming unit 40, a film thickness of one to two Ga atoms can be deposited.

[0267] Thus, in step S108 to step S109, the film forming process of the film containing Ga is performed by the workpiece 10 passing through the processing space 41 of the film forming unit 40A in operation, and the nitridation process is performed to form a GaN film by the workpiece 10 passing through the processing space 59 of the film processing unit 50 in operation. Furthermore, the GaN film formed on the workpiece 10 is flattened by the workpiece 10 passing through the space in the cylindrical electrode 61 of the surface processing unit 60 in operation (step S109).

[0268] As the time for forming a GaN film of a predetermined thickness on the workpiece 10, when the time obtained by simulation or experiment has passed, the turntable 31 first stops the operation of the film forming unit 40. That is, after the predetermined time has passed (step S110 is (Yes)), the operation of the film forming unit 40A is stopped. Specifically, the application of voltage to the target 42 by the power supply unit 46 is stopped. In addition, it is preferred to perform nitridation each time Ga is deposited with a film thickness at the atomic level, so it is preferred to determine the film formation speed, the nitridation speed and the rotation speed of the turntable 31 (the passing speed of each processing unit) to achieve a balance between film formation and nitridation. For example, the rotation speed of the turntable 31 is set to a speed of about 50rpm to 60rpm.

[0269] The formation of the AlN film and the GaN film as described above is repeated until a predetermined number of layers is reached (step S111: No). When the predetermined number of layers is reached (step S111: Yes), the formation of the buffer layer is terminated.

[0270] Then, a GaN layer is further formed on the buffer layer so as to overlap with the GaN layer (step S112). The GaN layer is formed in the same manner as the GaN film in the buffer layer. The film is formed within a time period sufficient to achieve a predetermined thickness set for the GaN layer.

[0271] After forming the buffer layer and the GaN layer as described above, the film forming unit 40A is stopped as described above, and the film processing unit 50 is stopped (step S113). Specifically, the RF power supply 54 is stopped from supplying high frequency power to the antenna 53. Then, the rotation of the turntable 31 is stopped, and the tray 11 carrying the film-formed workpiece 10 is discharged from the chamber 20 and the load lock chamber 71 (step S114). Thereafter, the cooling device 423 is stopped (step S115).

[0272] The cooling device 423 may be in a state of always operating, or may be stopped at will by the operator. For example, if the film forming device 1 is operated for 24 hours, the cooling device 423 is always operated, and is stopped during maintenance. In addition, at least the cooling device 423 is not stopped every time the workpiece 10 is discharged from the film forming device 1, but is stopped after the entire process is completed. For example, the cooling device 423 is stopped after a preset number of sheets have been processed.

[0273] In the above description, the film processing unit 50 or the surface processing unit 60 is continuously operated during the film formation of the buffer layer (step S105 to step S112), but the operation of the film processing unit 50 or the surface processing unit 60 may be stopped each time each step of step S105 to step S112 is completed. In the above case, the operation of the film processing unit 50 is stopped after the operation of the film forming unit 40B and the film forming unit 40A is stopped. In this way, the operation can be stopped in each step to perform the treatment. It does not matter whether the nitridation is sufficient, as long as the AlN film and the GaN film can be formed.

[0274] [Effect]

[0275] (1) The film forming apparatus 1 of the present embodiment comprises: a chamber 20 capable of making the interior thereof a vacuum; a workbench disposed in the chamber 20 and holding a plurality of workpieces 10; a film forming section 40 having a plasma generator P1 for converting a gas introduced into the chamber 20 into plasma, and forming a film on the workpiece 10 supported by the workbench; an anti-adhesion plate 410 disposed so as to surround a processing space 41 in which a film is formed on the workpiece 10 by the film forming section 40, and to prevent the film forming material from adhering to the chamber 20; a cooling block 420 disposed in the chamber 20 and having a contact surface 421 in direct contact with the anti-adhesion plate 410, and the anti-adhesion plate 410 is cooled by contacting the contact surface 421; and a flow path 422 disposed in the cooling block 420 and for circulating a cooling medium.

[0276] In addition, the workbench is a turntable 31 that holds a plurality of workpieces 10 and circulates the workpieces 10 in a circular trajectory, and the film forming unit 40 uses a plasma generator P1 to plasmatize a sputtering gas G1 introduced between a target 42 containing a film forming material and the turntable 31, and deposits particles of the film forming material on the workpiece 10 that is circulated and transported by the turntable 31 through sputtering to form a film.

[0277] In this way, by making the contact surface 421 of the cooling block 420 directly contact the anti-adhesion plate 410, the anti-adhesion plate 410 can be cooled. Moreover, the expansion and contraction caused by the thermal expansion of the anti-adhesion plate 410 can be suppressed, and the peeling of the film-forming material attached to the anti-adhesion plate 410 can be suppressed. In addition, since the film-forming material attached to the anti-adhesion plate 410 can be suppressed from peeling off and falling onto the workpiece 10, the occurrence of poor quality in the film forming process can be suppressed. Furthermore, the cooling block 420 is not a structure in which the cooling pipe and the anti-adhesion plate 410 are directly connected, so the cooling medium can be suppressed from flowing out into the chamber 20 due to the damage of the cooling pipe, etc. The portion of the cooling block 420 that is in direct contact with the anti-adhesion plate 410 is a block, that is, the portion arranged in the chamber 20 is a block, and therefore it is less likely to be damaged than the cooling pipe. The cooling block 420 is structured to cool the anti-deposition plate 410 by contacting with the contact surface 421 , and therefore the area in contact with the anti-deposition plate 410 is larger than that of the cooling pipe, and thus the cooling efficiency is excellent.

[0278] When using a water cooling pipe to cool the same area as the cooling block 420, the number of cooling pipes needs to be increased, making the structure complicated and difficult to maintain. For example, when removing the anti-adhesion plate 410, it is necessary to remove and install the cooling pipe to prevent leakage of the cooling medium. On the other hand, in this embodiment, when removing and installing the anti-adhesion plate 410, the water cooling pipe will not become an obstacle, and maintenance becomes easy. Furthermore, since the structure of the cooling block 420 itself is simpler than the cooling pipe, it is also easy to remove and has excellent maintainability.

[0279] Furthermore, when film formation is performed while the workpiece 10 is circulated and transported by the rotating table 31, when the film forming material peels off from the anti-adhesion plate 410, the film forming material leaks from the processing space 41 through the gap between the anti-adhesion plate 410 and the rotating table 31, and easily contaminates the chamber 20. However, in this embodiment, the film forming material can be suppressed from peeling off from the anti-adhesion plate 410, so that contamination in the chamber 20 can be prevented.

[0280] (2) The chamber 20 is provided with a heating unit 34 for heating the workpiece 10. Therefore, the temperature in the chamber 20 is easily increased by the heating unit 34, but the cooling block 420 can suppress thermal expansion of the deposition prevention plate 410, thereby reducing peeling of the film forming material.

[0281] (3) In the rotating table 31, the heating unit 34 is arranged in the plurality of holding areas HA for holding the respective workpieces 10. Therefore, the holding area HA heated by the heating unit 34 repeatedly passes through the position facing the anti-adhesion plate 410, and the temperature of the anti-adhesion plate 410 is likely to rise. However, the thermal expansion can be suppressed by the cooling block 420, thereby reducing the peeling of the film forming material.

[0282] (4) The cooling block 420 is provided along the outer periphery of the turntable 31 and the inner wall of the side surface 20c of the chamber 20. Therefore, the cooling block 420 can be effectively arranged by utilizing the gap between the inner wall of the side surface 20c of the chamber 20 for ensuring the rotation of the turntable 31, thereby suppressing the increase in size of the chamber 20.

[0283] (5) The contact surface 421 contacts the bottom of the anti-adhesion plate 410 to support the anti-adhesion plate 410. Therefore, the cooling block 420 does not become an obstacle during maintenance, and the anti-adhesion plate 410 supported by the contact surface 421 can be easily removed.

[0284] (6) A heat transfer portion 413 having an expanded area in a direction parallel to the rotation plane of the rotating table 31 (the plane of the worktable) is provided at the bottom of the anti-adhesion plate 410, and the contact surface 421 is in contact with the heat transfer portion 413. Therefore, the heat from the anti-adhesion plate 410 can be transferred to the cooling block 420 over a wider area, thereby enabling efficient cooling.

[0285] (7) The flow path 422 of the cooling block 420 is connected airtightly to a cooling device 423 that is arranged outside the chamber 20 and cools the cooling medium, so that the vacuum in the chamber 20 can be maintained. Therefore, the cooling medium can be prevented from being heated by the heat in the chamber 20, and efficient cooling can be performed. That is, the piping 422d does not pass through the chamber 20, but is directly connected to the outside of the chamber 20 from the cooling block 420 via the wall of the chamber 20. Therefore, the piping 422d will not be heated in the path passing through the chamber 20, and can directly receive the heat of the anti-adhesion plate 410 and discharge it to the outside, so that efficient cooling can be performed. As a result, the peeling of the film-forming material caused by the thermal expansion of the anti-adhesion plate 410 can be reduced, and the film-forming material can be suppressed from falling from the anti-adhesion plate 410 to the workpiece 10. In addition, in the present embodiment, the joint 422c is formed integrally with the cooling block 420, and the joint between the joint 422c and the piping 422d is located on the atmosphere side. As described above, since there is no seam in the chamber 20 , the cooling medium will not leak into the chamber 20 in the vacuum state.

[0286] (8) A plurality of cooling blocks 420 are provided, and the flow paths of the plurality of cooling blocks 420 are connected to each other via piping provided outside the chamber 20 in a manner that allows the cooling medium to flow. Therefore, by configuring a plurality of cooling blocks 420, while ensuring the area of ​​the contact surface 421, the degree of freedom of layout that matches the configuration of the components in the chamber 20 is increased. In addition, the piping that connects the plurality of cooling blocks 420 does not need to pass through the chamber 20, so that the cooling efficiency is good as described above. As a result, the peeling of the film-forming material caused by the thermal expansion of the anti-adhesion plate 410 can be reduced, thereby preventing the film-forming material from falling from the anti-adhesion plate 410 onto the workpiece 10.

[0287] (9) The film forming apparatus 1 includes a surface treatment section 60 that treats at least one surface of the workpiece 10 and the film being circulated and transported by the rotating table 31. In addition, the film forming section 40 includes a GaN film forming section 40A that deposits particles of a film forming material containing GaN, and the film treatment section 50 includes a nitriding treatment section that nitrides the particles of the film forming material deposited in the GaN film forming section 40A. Therefore, when performing a surface treatment that is effective in heating the workpiece 10, or when forming a film using a film forming material that is effective in heating, peeling of the film forming material caused by thermal expansion of the anti-adhesion plate 410 can be reduced. Furthermore, it is possible to suppress the film forming material from falling from the anti-adhesion plate 410 onto the workpiece 10.

[0288] [Modifications]

[0289] The present invention is not limited to the above-described embodiment. The basic structure is the same as that of the above-described embodiment, and the following modified examples can also be applied.

[0290] (1) The above embodiment is a film forming apparatus 1 that forms a film while cyclically transporting the workpiece 10 in a circular trajectory using a rotating table 31, but the present invention is not limited to such a cyclic transport type film forming apparatus 1. For example, Fig. 9 and Fig.10 As shown, the film forming apparatus 1 includes: a worktable ST for supporting a workpiece 10 in a chamber 20; and a film forming unit 40 provided with a plasma generator P1 for converting a gas introduced into the chamber 20 into plasma, and forming a film on the workpiece 10 supported by the worktable ST. In addition, an anti-adhesion plate 410 and a cooling block 420 may be provided in the chamber 20 of the film forming apparatus 1. In the above case, a heating unit 34 is built into the worktable ST.

[0291] The chamber 20 is box-shaped, and a rectangular processing space 41 is formed inside. The anti-adhesion plates 410 are four rectangular flat plates arranged along the inner sides of the four side surfaces 20c of the processing space 41 to cover the inner walls. The cooling block 420 is a rectangular parallelepiped disposed between the inner wall of the side surface 20c of the chamber 20 and the anti-adhesion plate 410, and has a contact surface 421 that directly contacts the anti-adhesion plate 410. Fig.11 As shown, a meandering flow path 422 is provided inside the cooling block 420. In this film forming apparatus 1, it is also possible to suppress the peeling of the film forming material caused by the thermal expansion of the deposition prevention plate 410.

[0292] (2) The contact surface 421 of the cooling block 420 is the upper surface in the above embodiment, but Fig. 9 As shown, it can also be set to the side. That is, in the embodiment, the upper surface of the cooling block 420 is connected to the lower end side of the anti-adhesion plate 410, but it is not limited to this. For example, the cooling block 420 can also be in contact with the main body 411 of the anti-adhesion plate 410. In the case, it is preferred to set the contact surface 421 of the cooling block 420 to a shape along the outer periphery of the main body 411 of the anti-adhesion plate 410.

[0293] In addition, the contact surface 421 of the cooling block 420 may also be in contact with the upper end of the anti-adhesion plate 410. In the case described above, the cooling block 420 is disposed between the top surface 20a of the chamber 20 and the anti-adhesion plate 410, but the cooling block 420 may be configured to not contact the inner wall of the top surface 20a, or the cooling block 420 may be formed of an elastic body with good thermal conductivity so that contact with the top surface 20a will not be a problem. In this way, if there is a space between the top surface 20a and the anti-adhesion plate 410 where the cooling block 420 can be placed, the cooling block 420 may also be set in the space, and in the case described above, the thickness of the cooling block 420 may also be thinner than that of the embodiment described above. That is, as long as the thickness is sufficient to form the flow path 422 of the cooling medium.

[0294] Furthermore, it may be a structure formed by a combination of any one of a structure in which the cooling block 420 contacts the lower end of the anti-adhesion plate 410, a structure in which the cooling block 420 contacts the side of the anti-adhesion plate 410, and a structure in which the cooling block 420 contacts the upper end of the anti-adhesion plate 410.

[0295] (3) In the above embodiment, the cooling block 420 is in contact with the inner wall (side surface 20c, bottom surface 20b) of the chamber 20. However, a gap may be provided between the cooling block 420 and the inner wall of the chamber 20 to provide a decompression space. In addition, a heat insulating material may be provided between the cooling block 420 and the inner wall of the chamber 20. Thus, the inflow of heat from the chamber 20 can be avoided, and the cooling efficiency of the anti-adhesion plate 410 can be improved.

[0296] (4) As described above, the cooling block 420 is easy to maintain by forming a plurality of split structures, but it can also be set as an integrated type. For example, the two cooling blocks 420 in the above embodiment can be made into an integrated type. Furthermore, the cooling block 420 corresponding to the plurality of anti-adhesion plates 410 can also be set as one. In other words, a structure in which a plurality of anti-adhesion plates 410 are in contact with a common cooling block 420 can also be adopted.

[0297] (5) In the above embodiment, the heating unit 34 is provided on the rotating table 31 and the worktable ST, but the present invention is not limited thereto. In addition, in the film forming apparatus 1 without the heating unit 34, the problem of thermal expansion caused by heating of the anti-adhesion plate 410 also occurs, and therefore the cooling block 420 of the present invention can be applied. In addition, the film forming unit 40 is not limited to the embodiment in which the film is formed by sputtering. For example, it can also be set as a film forming unit 40 such as plasma CVD.

[0298] (6) The structure of the transfer unit 70 is not limited to the above embodiment as long as it can transfer the workpiece 10 while maintaining the pressure in the chamber 20. For example, the transfer unit 70 may be configured to transfer the workpiece 10 via a load lock chamber provided on the ceiling 20a of the chamber 20.

[0299] (7) In the above embodiment, the surface treatment unit 60 is disposed in the chamber 20, but a surface treatment unit may be further disposed outside the chamber 20. The surface treatment unit is provided with a cylindrical electrode, an RF power source, and a process gas introduction unit in the same manner as the surface treatment unit 60, and the oxide film removal process can be performed on the workpiece 10 after it is moved in while it is stationary.

[0300] (8) The shape and number of the heat insulating plates 36a are not limited to the above-described embodiment. The heat insulating portion 36 is arranged to cover the lower surface of the turntable 31 separately, but may be configured to stack heat insulating plates 36a having a U-shaped cross section in a stacked manner so as to cover the lower surface of the turntable 31 at a position corresponding to the holding area HA. ​​In addition, although the heat insulating plate 36a is exemplified as a shape composed of a side plate and a flat plate, a heat insulating effect can be obtained even if it is composed of only a flat plate.

[0301] (9) In the above-described embodiment, a plurality of heating units 34 are provided, and each annular electrode 351a is connected to the heating unit 34 via a cable 351b. The number of heating units 34 connected to one annular electrode 351a may be one or more. In the case where a plurality of heating units 34 are connected to one annular electrode 351a, for example, a plurality of selected heating units 34 from among the plurality of heating units 34 are electrically connected, and the annular electrode 351a is connected only to a representative heating unit 34 via the cable 351b. Thus, the number of annular electrodes 351a can be made smaller than the number of heating units 34, and the length of the rotating electrode unit 351 can be shortened. As a result, the rotating shaft 311 on which the rotating electrode unit 351 is provided can be shortened, thereby achieving a reduction in the space for installing the device or a rotational stability of the rotating table 31.

[0302] (10) The type or number of the film forming unit 40, the film processing unit 50, and the surface treatment unit 60 provided in the chamber 20 are not limited to the above-described embodiment. The film forming unit 40 may be provided as one, or may be provided as three or more. The film processing unit 50 and the surface treatment unit 60 may be provided as a plurality. For example, the film forming device 1 may be configured so that the film forming unit 40 is provided as only the film forming unit 40A to form a GaN film. In addition, in addition to the above-described film forming unit 40, a film forming unit 40 formed of a target material of a different type may be added, a film forming unit 40 formed of a target material of the same type may be added, and a film treatment unit 50 may be added.

[0303] In addition, for example, a film forming unit having a target 42 containing indium oxide and tin oxide as film forming materials of ITO may be added to form an ITO film in the chamber 20. In the above case, oxygen may be introduced into the film processing unit 50 instead of nitrogen to supplement the oxidation of the ITO film. In addition, for example, the film forming unit 40A, the film forming unit 40B and the film processing unit 50 may be operated simultaneously to form an aluminum gallium nitride (AlGaN) film containing Ga, Al and N. The AlGaN film functions as a light-emitting layer of an LED. That is, the light-emitting layer may also be formed in the chamber 20.

[0304] (11) The film forming unit 40 may include a film forming unit for depositing particles of a film forming material containing gallium oxide (Ga2O3), and the film processing unit 50 may include an oxidation processing unit for oxidizing the particles of the film forming material deposited in the film forming unit. That is, a film forming unit using a material containing Ga atoms and oxygen (O) as a target 42 may be provided in place of the film forming unit 40A or in addition thereto, and an oxidation processing unit using a gas containing oxygen as a process gas G2 may be provided in place of the nitriding processing unit or in addition thereto.

[0305] (12) In addition to the above-described embodiment, the film forming unit 40 may include a film forming unit having a target 42 containing a film forming material containing InN. Indium (In) alone has a low melting point, and in order to actually form a solid target 42, an InN target to which nitrogen (N) is added is formed. The InN target contains In atoms that are insufficiently bonded to nitrogen, which is the same as described above.

[0306] (13) In addition to the above-described embodiment, an impurity addition treatment section may be provided to add n-type or p-type impurities (dopants) to the formed GaN film. In the above-described case, the film forming section, the nitridation treatment section, and the impurity addition treatment section are arranged in this order on the circulation transport path. The impurity addition treatment section includes the same structure as the film forming section 40.

[0307] In this embodiment, when forming the GaN film, a layer including a p-channel (p-type semiconductor) in which Mg ions are added to the GaN layer can be formed together with the film forming unit 40A and the film processing unit 50. Also, when forming the GaN film, a layer including an n-channel (n-type semiconductor) in which Si ions are added to the GaN layer can be formed together with the film forming unit 40A and the film processing unit 50.

[0308] The n-type impurities or p-type impurities added in the impurity addition processing section are not limited to the impurities exemplified above. For example, Ge or Sn can also be cited as n-type impurities. In the above case, the film-forming material constituting the target provided in the impurity addition processing section can be a film-forming material containing Ge or Sn instead of Si.

[0309] [Other embodiments]

[0310] Although the embodiments of the present invention and the modified examples of each part are described, the embodiments or the modified examples of each part are provided as an example and are not intended to limit the scope of the invention. The novel embodiments can be implemented in various other forms, and various omissions, substitutions, changes, and combinations can be made without departing from the scope of the invention. These embodiments or their modifications are included in the scope or the main idea of ​​the invention and are included in the invention described in the claims.

Claims

1. A film forming device, characterized in that: have: A chamber capable of making the interior a vacuum; A workbench, disposed in the chamber, to support the workpiece; a film forming unit having a plasma generator for converting the gas introduced into the chamber into plasma, and forming a film on the workpiece supported by the worktable; an anti-adhesion plate configured to surround a processing space in which a film is formed on the workpiece by the film forming part to prevent the film forming material from adhering to the chamber; a cooling block, disposed in the chamber, having a contact surface that is in direct contact with the anti-adhesion plate, and cooling the anti-adhesion plate by making the contact surface contact with the plate; and The flow path is arranged on the cooling block for the cooling medium to flow.

2. The film forming device according to claim 1, characterized in that: The worktable is a rotating table that holds a plurality of the workpieces and cyclically transports the workpieces in a circular trajectory. The film forming unit forms a film by forming a sputtering gas introduced between the target including the film forming material and the turntable into plasma using the plasma generator, and depositing particles of the film forming material on the workpiece being circulated and transported by the turntable by sputtering.

3. The film forming device according to claim 1 or 2, characterized in that: A heating unit for heating the workpiece is provided in the chamber.

4. The film forming device according to claim 2, characterized in that: In the rotating table, heating units are arranged in a plurality of holding regions for holding the respective workpieces.

5. The film forming device according to claim 1, characterized in that: The cooling block is arranged between the outer circumference of the workbench and the inner wall of the side of the chamber.

6. The film forming device according to claim 1 or 2, characterized in that: The contact surface contacts the bottom of the anti-adhesion plate to support the anti-adhesion plate.

7. The film forming device according to claim 1, characterized in that: A heat conducting portion having an expanded area in a direction parallel to the plane of the workbench is provided at the bottom of the anti-adhesion plate, and the contact surface is in contact with the heat conducting portion.

8. The film forming device according to claim 1, characterized in that: The flow path of the cooling block is connected in an airtight manner to a cooling device that is disposed outside the chamber and cools the cooling medium so that the vacuum in the chamber can be maintained.

9. The film forming device according to claim 1, characterized in that: A plurality of the cooling blocks are provided, and the flow paths of the plurality of cooling blocks are connected to each other via pipes provided outside the chamber so that the cooling medium can flow.

10. The film forming device according to claim 2, characterized in that: A surface treatment unit is provided for treating at least one surface of the workpiece and a film formed on the workpiece during circulation transport by the turntable.

11. The film forming device according to claim 2, characterized in that: A film processing section is provided for processing a film deposited on the workpiece during circulation transport by the turntable by the film forming section, The film forming section includes a gallium nitride film forming section that deposits particles of the film forming material containing gallium nitride. The film processing section includes a nitridation processing section that nitridates particles of the film forming material deposited in the gallium nitride film forming section.

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