Automatic leak detection method for chemical vapor deposition chamber

Abstract

The invention relates to an automatic leak hunting method for a chemical vapor deposition chamber, which comprises the following steps: S1, after coating is completed and a substrate is taken out, judging whether a self-cleaning condition is met or not, if so, executing self-cleaning and turning to the next step, otherwise, continuing coating work; s2, self-cleaning is carried out, a process cavity volume film is removed, whether the automatic leakage detection condition is met or not is judged, if yes, automatic leakage detection is carried out, and if not, film coating work continues to be carried out; at the moment, the process cavity is subjected to leak rate detection under the condition of no film deposition, so that the leak rate detection eliminates the influence of residual gas volatilized by the film deposition; in leak rate detection, a lower electrode of a chemical vapor deposition chamber is moved to a low position so as to avoid residual gas release caused by the fact that the lower electrode is close to and bakes a back plate and an upper electrode. The method is beneficial for improving the accuracy of automatic leak detection of the chemical vapor deposition chamber.

Description

Technical Field

[0001] The invention relates to the technical field of display device production, and in particular to an automatic leak detection method for a chemical vapor deposition chamber. Background Art

[0002] The chemical vapor deposition process chamber is the main equipment for substrate coating. When the airtightness problem occurs in the structure of the equipment, the vacuum degree of the process chamber will decrease, causing dust and air from the external atmosphere to be sucked into the process chamber, destroying the cleanliness and purity of the entire process chamber, causing product quality abnormalities during subsequent substrate coating. Therefore, during the production process of the chemical vapor deposition process chamber, automatic leak detection must be performed at fixed intervals to ensure that the vacuum degree of the process chamber meets the specifications before production can continue.

[0003] In the existing automatic leak detection technology, after the process chamber is coated and the substrate is removed, the accumulated film in the chamber is not removed by self-cleaning. The accumulated film will continue to release residual gas, affecting the pressure gauge reading, causing the leakage rate calculation result to be distorted, resulting in the inability to find the chamber airtightness problem. Therefore, it is necessary to improve the existing automatic leak detection method to improve the accuracy of automatic leak detection. Summary of the invention

[0004] The object of the present invention is to provide a method for automatic leak detection in a chemical vapor deposition chamber, which is beneficial to improving the accuracy of automatic leak detection in a chemical vapor deposition chamber.

[0005] In order to achieve the above object, the technical solution adopted by the present invention is: a chemical vapor deposition chamber automatic leak detection method, comprising the following steps: S1. After the coating is completed and the substrate is taken out, first determine whether the self-cleaning conditions are met. If yes, perform self-cleaning and go to the next step. Otherwise, continue with the coating work; S2. Perform self-cleaning first to remove the accumulated film in the process chamber, and then determine whether the automatic leak detection conditions are met. If yes, perform automatic leak detection, otherwise continue with the coating work. At this time, the process chamber is tested for leak rate without film accumulation, so that the leak rate detection excludes the influence of the volatile residual gas of the accumulated film. In the leak rate detection, the lower electrode of the chemical vapor deposition chamber is first moved to a low position to avoid the lower electrode from being close to and baking the back plate and the upper electrode to cause the residual gas to be released.

[0006] Further, the chemical vapor deposition chamber comprises a process chamber, in which a back plate, an upper electrode and a lower electrode are arranged, the lower electrode is arranged below the back plate and the upper electrode, can move up and down and has a heating function, an air inlet, a vacuum port and a pressure gauge are arranged on the process chamber, and an air inlet valve and a vacuum valve are installed on the air inlet and the vacuum port respectively; Further, the chemical vapor deposition chamber is tested for leak rate according to the following steps: 1) Control the lower electrode to move downward to a low position, so that the lower electrode is away from the back plate and the upper electrode, to prevent the lower electrode from being close to and baking the back plate and the upper electrode, causing the back plate and the upper electrode to release residual gas; 2) Control the vacuum valve to close; 3) Control the air inlet valve to open and introduce nitrogen into the process chamber; 4) When the pressure gauge reaches the set value, the intake valve is controlled to close; 5) Calculate and determine whether the pressure drop ratio in the process chamber, i.e., the stealing value, meets the specification. If it does, continue with the subsequent coating work; otherwise, an alarm is issued and production is stopped.

[0007] Furthermore, the vacuum port is located on the process chamber below the lower electrode; in step 1), the lower electrode is controlled to move downward to the lowest position to seal the vacuum port to avoid leakage rate detection distortion due to incomplete closure of the vacuum valve.

[0008] Furthermore, the self-cleaning condition is that the accumulated number of coated sheets reaches the self-cleaning setting.

[0009] Furthermore, the automatic leak detection condition is that the accumulated number of coated sheets reaches the leak detection setting.

[0010] Compared with the prior art, the present invention has the following beneficial effects: the present invention provides a method for automatic leak detection in a chemical vapor deposition chamber, which first performs self-cleaning condition judgment and self-cleaning treatment before automatically detecting the leak in the chemical vapor deposition chamber, so as to remove the film accumulated in the process chamber, and avoid the residual gas released by the film accumulated in the process chamber, which may cause the leakage rate calculation of the automatic leak detection to be distorted; at the same time, in the process of leak rate detection, the residual gas volatilization is reduced and leakage is avoided by moving the lower electrode down to a low position. Therefore, the present invention can greatly improve the accuracy of automatic leak detection in chemical vapor deposition chambers, and is easy to implement, and has strong practicality and broad application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 is a flow chart of a method implementation of an embodiment of the present invention; Figure 2 is a schematic structural diagram of a chemical vapor deposition chamber in an embodiment of the present invention; Figure 3 It is a flow chart of the implementation of the leak rate detection in the embodiment of the present invention.

[0012] In the figure: 1-process chamber; 2-back plate and upper electrode; 3-lower electrode; 4-pressure gauge; 5-inlet valve; 6-vacuum valve. DETAILED DESCRIPTION

[0013] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0014] It should be noted that the following detailed descriptions are exemplary and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.

[0015] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0016] like Figure 1 As shown, this embodiment provides a chemical vapor deposition chamber automatic leak detection method, comprising the following steps: S1. After the coating is completed and the substrate is taken out, first determine whether the self-cleaning conditions are met, that is, whether the accumulated number of coated sheets reaches the self-cleaning setting. If so, perform self-cleaning and go to the next step, otherwise continue with the coating work.

[0017] S2. Perform self-cleaning first to remove the volume film in the process chamber, and then determine whether the automatic leak detection conditions are met, that is, whether the cumulative number of coated sheets reaches the leak detection setting. If so, perform automatic leak detection, otherwise continue with the coating work; at this time, the process chamber is tested for leak rate without film accumulation (no residual gas release), so that the leak rate detection data completely excludes the influence of data distortion caused by the volatile residual gas of the accumulated film; in the leak rate detection, first move the lower electrode of the chemical vapor deposition chamber to a low position to avoid the lower electrode from being close to and baking the back plate and the upper electrode to cause residual gas release.

[0018] Figure 2 Schematic diagram of the structure of the chemical vapor deposition chamber in this embodiment. Figure 2 As shown, the chemical vapor deposition chamber includes a process chamber 1, in which a back plate, an upper electrode 2 and a lower electrode 3 are provided. The lower electrode 3 is arranged below the back plate and the upper electrode 2, can move up and down and has a heating function. An air inlet, a vacuum port and a pressure gauge 4 are provided on the process chamber 1. An air inlet valve 5 and a vacuum valve 6 are respectively installed on the air inlet and the vacuum port; the vacuum port is located on the process chamber 1 below the lower electrode 3.

[0019] Figure 3 FIG. 1 is a flow chart for realizing leakage rate detection in this embodiment. Figure 3 As shown, the leak rate detection of the chemical vapor deposition chamber is carried out according to the following steps: 1) Control the lower electrode 3 to move downward to the lowest position; on the one hand, keep the lower electrode 3 away from the back plate and the upper electrode 2 to prevent the lower electrode 3 from getting close to and baking the back plate and the upper electrode 2, which may cause the back plate and the upper electrode 2 to release residual gas; on the other hand, make the lower electrode 3 seal the vacuum port to avoid leakage rate detection distortion due to incomplete closure of the vacuum valve 6.

[0020] 2) Control the vacuum valve to close.

[0021] 3) Control the air inlet valve to open and introduce nitrogen into the process chamber.

[0022] 4) When the pressure gauge reaches the set value, the intake valve is controlled to close.

[0023] 5) Calculate and determine whether the pressure drop ratio in the process chamber, i.e., the stealing value, meets the specification. If it does, continue with the subsequent coating work; otherwise, an alarm is issued and production is stopped.

[0024] The above is only a preferred embodiment of the present invention, and does not limit the present invention in other forms. Any technician familiar with the profession may use the above disclosed technical content to change or modify it into an equivalent embodiment with equivalent changes. However, any simple modification, equivalent change and modification made to the above embodiment according to the technical essence of the present invention without departing from the technical solution of the present invention still belongs to the protection scope of the technical solution of the present invention.

Claims

1. A method for automatic leak detection in a chemical vapor deposition chamber, characterized in that: The steps include: S1. After the coating is completed and the substrate is taken out, first determine whether the self-cleaning conditions are met. If yes, perform self-cleaning and go to the next step. Otherwise, continue with the coating work; S2. Perform self-cleaning first to remove the accumulated film in the process chamber, and then determine whether the automatic leak detection conditions are met. If yes, perform automatic leak detection, otherwise continue with the coating work. At this time, the process chamber is tested for leak rate without film accumulation, so that the leak rate detection excludes the influence of the volatile residual gas of the accumulated film. In the leak rate detection, the lower electrode of the chemical vapor deposition chamber is first moved to a low position to avoid the lower electrode from being close to and baking the back plate and the upper electrode to cause the residual gas to be released.

2. The automatic leak detection method for a chemical vapor deposition chamber according to claim 1, characterized in that: The chemical vapor deposition chamber includes a process chamber, in which a back plate, an upper electrode and a lower electrode are arranged. The lower electrode is arranged below the back plate and the upper electrode, can move up and down and has a heating function. The process chamber is provided with an air inlet, a vacuum port and a pressure gauge. The air inlet and the vacuum port are respectively equipped with an air inlet valve and a vacuum valve.

3. The automatic leak detection method for a chemical vapor deposition chamber according to claim 2, characterized in that: To perform a leak rate test on a CVD chamber, follow these steps: 1) Control the lower electrode to move downward to a low position, so that the lower electrode is away from the back plate and the upper electrode, to prevent the lower electrode from being close to and baking the back plate and the upper electrode, causing the back plate and the upper electrode to release residual gas; 2) Control the vacuum valve to close; 3) Control the air inlet valve to open and introduce nitrogen into the process chamber; 4) When the pressure gauge reaches the set value, the intake valve is controlled to close; 5) Calculate and determine whether the pressure drop ratio in the process chamber, i.e., the stealing value, meets the specification. If it does, continue with the subsequent coating work; otherwise, an alarm is issued and production is stopped.

4. The automatic leak detection method for a chemical vapor deposition chamber according to claim 2, characterized in that: The vacuum port is located on the process chamber below the lower electrode; in step 1), the lower electrode is controlled to move downward to the lowest position to seal the vacuum port, so as to avoid leakage rate detection distortion caused by incomplete closure of the vacuum valve.

5. The automatic leak detection method for a chemical vapor deposition chamber according to claim 1, characterized in that: The self-cleaning condition is that the accumulated number of coated sheets reaches the self-cleaning setting.

6. The automatic leak detection method for a chemical vapor deposition chamber according to claim 1, characterized in that: The automatic leak detection condition is that the accumulated number of coated sheets reaches the leak detection setting.

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