Intelligent terminal internal chip port emission coupling method under radiation electric field

Abstract

The invention discloses an emission coupling method under a radiation electric field of an internal chip port of an intelligent terminal. When intelligent equipment suffers from strong transient interference such as switching on and switching off of a high-voltage switch, oscillation impact and the like, a severe radiation electric field is generated due to the fact that impact current flows through a high-voltage switch loop. In order to deeply analyze the disturbed degree of the electrified railway intelligent terminal suffered from strong electromagnetic transient interference of a high-voltage switch and explore the disturbed condition of an internal intelligent chip, a systematized electric field radiation interference calculation model comprising a transmitting conductor, a PCB card and the intelligent chip is provided and designed; and further considering the simulation convergence problem caused by the fine structure of the intelligent chip, and solving the simulation convergence problem by using a finite element acceleration simulation method to obtain a specific electric field intensity value. According to the method, the electromagnetic interference problem of intelligent terminal equipment can be researched, a feasible method is provided for electromagnetic emission coupling calculation of the surface length transient state, and a solution and reference are provided for electromagnetic calculation.

Description

Technical Field

[0001] The present invention belongs to the technical field of communication equipment antenna transmission and coupling, and in particular relates to a transmission coupling method under the radiation electric field of an internal chip port of an intelligent terminal. Background Art

[0002] High-speed electrified railway is a large and complex system. As the traction power increases, the traction current flowing through the contact network increases, and the coupling effect of the current on the surrounding metal conductors increases. Among them, the high-order harmonic current has a greater impact on the surrounding electromagnetic environment. Intelligent equipment is an important part of the future electrified railway construction. During the promotion and trial process, the failures caused by electromagnetic interference account for the vast majority, and the research and protection methods of previous conducted interference are also difficult to be effective. Therefore, it is necessary to study the interference of high-voltage switchgear when it is subjected to transient radiation interference. Due to the large number of radiation electric field protection measures, it is often easy to ignore the hazards of radiation electric fields. Calculation and analysis of the interference caused by it has important theoretical and engineering value for improving the application reliability of such equipment.

[0003] When smart devices are subjected to strong transient interference such as high-voltage switch opening and closing, oscillation shock, etc., the impact current flows through the high-voltage switch circuit, thereby generating a serious radiation electric field. This radiation electric field has an extremely high frequency and high intensity, and may pass through the PCB board or hole of the chip port inside the smart terminal and penetrate into the shell, thereby directly generating coupling voltage and current on the smart chip board. Under the action of such a transient process, some sensitive components and chips on the smart chip may suffer severe shocks and produce electrical breakdown or thermal breakdown, which may cause errors in equipment measurement or data loss, or directly destroy the device, causing serious faults such as switch failure. Summary of the invention

[0004] In order to make up for the shortcomings of the prior art, the present invention provides a transmission coupling method under the radiation electric field of the internal chip port of an intelligent terminal. By establishing a physical model of the transmitting conductor, the PCB board and the intelligent chip, they are matched and debugged, so as to calculate the radiation electric field and obtain the interference of the radiation electric field on the transmission line or the power port and other lines on the intelligent chip.

[0005] In order to achieve the above object, the technical solution adopted by the present invention is:

[0006] A method for transmitting coupling under the radiation electric field of the chip port inside the intelligent terminal, characterized in that: the specific operation steps are as follows:

[0007] Step 1: Establish a finite element electromagnetic calculation model of a high-voltage switch intelligent terminal device, wherein the finite element electromagnetic calculation model includes a transmitting conductor, an intelligent chip, and a calculation module; the intelligent chip is arranged in a PCB board; and the electromagnetic parameters of the transmitting conductor and the intelligent chip are input into the calculation module;

[0008] Step 2: After finite element accelerated simulation, the interference-causing signal is imported into the finite element electromagnetic calculation model, and the signal passes through the transmitting conductor. A measurement point is selected near the smart chip of the finite element electromagnetic calculation model as the electric field strength measurement point;

[0009] Step 3: Perform finite element electromagnetic field calculation, collect the radiation electric field strength signal at the electric field strength measurement point near the smart chip, and restore the radiation electric field strength signal according to the finite element acceleration simulation multiple of the interference signal. The restored electric field strength signal is the actual radiation electric field strength signal of the measurement point under the interference signal;

[0010] Step 4: Apply the actual radiation electric field signal of the measurement point obtained in step 3 to the smart chip of the finite element electromagnetic calculation model, calculate the voltage and current signals induced by the radiation electric field on the power port or transmission line of the smart chip, measure the current and voltage signals, and obtain the signal, that is, the induced electrical quantity signal.

[0011] Further, in step 3, the specific method for performing finite element accelerated simulation processing is:

[0012] Assume that the problem to be solved is the radiated electric field and induced electrical quantity caused by the interference signal U1;

[0013] First, the amplitude of signal U1 is kept unchanged, and then the frequency of signal U1 is increased to hundreds of MHz to obtain a new interference signal U2. U2 is imported into the finite element electromagnetic field calculation model for calculation. The radiation electric field strength E2' can be measured at the electric field strength measurement point near the smart chip. After obtaining E2', the radiation electric field strength E2 caused by the actual action of U1 is restored according to the multiple relationship between the frequencies of U1 and U2. E2 is applied to the smart chip to obtain the voltage and current induced by the interference of the interference signal U1 on the smart chip.

[0014] Furthermore, in step 3, the specific derivation process of performing finite element accelerated simulation processing is as follows:

[0015] For an alternating current with a frequency of f, when the delay time r / v is much smaller than the period T = 1 / f of the electromagnetic field excited by the alternating current, the effect caused by the delay is very small and the induced electric field can be ignored;

[0016] Among them, r is the distance from the electric field strength measurement point to the emitting conductor; v is the propagation speed of electromagnetic waves in space;

[0017] After neglecting the delay effect, the quasi-steady-state electromagnetic field satisfies:

[0018]

[0019] Among them, E is the electric field intensity, H is the electric field intensity, D is the electric displacement vector, and B is the magnetic induction intensity;

[0020] In the solved quasi-steady-state field, there are two media, namely, the emitting conductor as medium 1 and the air at the smart chip as medium 2. The boundary conditions of the two meet the following requirements:

[0021] H 1t -H 2t =J S (2)

[0022] J S =σ·E(3)

[0023] (σ1+jωε1)E1e n =(σ2+jωε2)E2e n (4)

[0024] Among them, H 1t is the electric field strength of medium 1, H 2t is the electric field strength of medium 2, J s is the induced current density, σ is the conductivity, E is the electric field strength, σ1 is the conductivity of medium 1, σ2 is the conductivity of medium 2, ω is the signal angular velocity, ε1 is the dielectric constant of medium 1, ε2 is the dielectric constant of medium 2, E1 is the electric field strength of medium 1, E2 is the electric field strength of medium 2, j is the imaginary unit, e n is the unit voltage.

[0025] When the electromagnetic field in medium 1 remains unchanged and the skin effect of medium 2 is ignored, the induced electric field at a certain position in medium 2 at different transmission frequencies can be converted by the following formula:

[0026]

[0027] Among them, σ2' is the conductivity of medium 2 after finite element accelerated simulation, ω' is the signal angular velocity after finite element accelerated simulation, ε2' is the dielectric constant of medium 2 after finite element accelerated simulation, and E2' is the electric field intensity of medium 2 after finite element accelerated simulation;

[0028] Formula (5) can be simplified as:

[0029]

[0030] Combining equations (3) and (6), the induced current density at medium 2 is:

[0031]

[0032] Among them, f is the original transmission frequency of the interference signal, and f' is the frequency of the interference signal after finite element accelerated simulation;

[0033] Substituting equation (7) into equation (6) yields the electric field intensity in medium 2:

[0034]

[0035] According to formula (8), we only need to know the finite element acceleration simulation multiple f / f' and the electric field strength E2' at the smart chip after scaling to obtain the actual electric field strength E2.

[0036] Furthermore, in step 3 and step 4, the finite element method is used to solve the radiation electric field intensity, and the characteristics of the finite element method are as follows:

[0037] When solving, the total radiation field is divided into the primary background field and the secondary scattered field, as shown in formula (9):

[0038] E=E P +E S (9)

[0039] Where E is the total interference field, E P is the primary background field, ES is the secondary scattered field;

[0040] Taking the curl on both sides of equation (9) yields equation (10);

[0041]

[0042] Where σ is the conductivity, σ a =σ-σ0, σ0 is the background field conductivity, μ0 is the vacuum permeability, ε is the dielectric constant;

[0043] After using the regular hexahedron rule to transform the finite element matrix, we can get equation (11) to calculate the secondary electric field to be solved;

[0044] Ae=q(11)

[0045] Among them, A is the stiffness matrix, e is the electric field to be solved, and q is the product of the mass matrix and the primary field.

[0046] Furthermore, the smart chip is an acquisition circuit board card for processing measurement signals in power or communication equipment.

[0047] Beneficial effects of the present invention:

[0048] 1) The present invention models and unifies the various parts involved in the smart chip, thereby calculating the impact of the spatial radiation electric field generated when the smart chip is subjected to a transient interference signal. The radiation electric field strength of the smart chip and the transient induced voltage and current at the power port or transmission line can be collected, and the interference problem of radiation interference on the chip port inside the smart terminal is quantitatively studied, providing a reference and basis for protecting against interference from antennas in engineering applications;

[0049] 2) The present invention reasonably models the transmitting conductor and the smart chip and cooperates with the calculation module. After the interference signal is subjected to finite element accelerated simulation to solve the corresponding electric field strength, the radiation electric field strength signal is restored according to the Maxwell principle, and then the method of solving the induced electrical quantity is solved. This avoids the problem of erroneous solutions caused by non-convergence of hard solutions, and provides a feasible solution to the electromagnetic interference problem of such smart chips. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] Figure 1 It is the high-frequency inrush current interference voltage signal waveform used in the specific implementation of the emission coupling method under the radiation electric field of the chip port inside the intelligent terminal of the present invention;

[0051] Figure 2 It is the radiation electric field intensity E2' waveform solved by finite element accelerated simulation when the internal chip port of the intelligent terminal of the present invention is disturbed by high-frequency surge current;

[0052] Figure 3 It is the electric field strength E2 waveform obtained by restoring the electric field strength obtained by finite element accelerated simulation when the internal chip port of the intelligent terminal of the present invention is disturbed by high-frequency oscillation impact;

[0053] Figure 4 It is the induced voltage waveform calculated by the method of the present invention under the interference signal. DETAILED DESCRIPTION

[0054] The present invention is described in detail below in conjunction with specific implementation modes.

[0055] The specific operation steps of the emission coupling method under the radiation electric field of the internal chip port of the intelligent terminal of the present invention are as follows:

[0056] Step 1: Establish a finite element electromagnetic calculation model, which includes a transmitting conductor, an intelligent chip, and a calculation module; the intelligent chip is set in a PCB board; and the electromagnetic parameters of the transmitting conductor and the intelligent chip are input into the calculation module;

[0057] Step 2: After a finite element accelerated simulation, the signal causing interference is imported into the finite element electromagnetic calculation model, so that it passes through the transmitting conductor, and a measurement point is selected near the smart chip of the finite element electromagnetic calculation model as the electric field strength measurement point according to the use requirements;

[0058] Step 3: Perform finite element electromagnetic field calculation, collect the radiation electric field strength signal at the electric field strength measurement point near the smart chip, and restore the radiation electric field strength signal according to a finite element acceleration simulation multiple of the interference signal. The restored electric field strength signal is the actual radiation electric field strength signal of the measurement point under the interference signal;

[0059] Step 4: Apply the actual radiation electric field signal of the measurement point obtained in step 3 to the smart chip of the finite element electromagnetic calculation model, calculate the voltage and current signals induced by the radiation electric field on the power port or transmission line of the smart chip, measure the current and voltage signals, and obtain the signal, that is, the induced electrical quantity signal.

[0060] Step 3 is a specific method for finite element accelerated simulation processing: Assume that the problem to be solved is the radiation electric field and its induced electrical quantity caused by the interference signal I1. Then first keep the amplitude of the signal U1 unchanged, increase the frequency to hundreds of MHz, and obtain a new interference signal U2. U2 is imported into the finite element magnetic field calculation model for calculation. The radiation electric field strength U2' can be measured at the electric field strength measurement point of the smart chip. After obtaining E2', according to the multiple relationship between the frequencies of U1 and U2, the radiation electric field strength E2 caused by the actual action of U1 is restored. E2 is applied to the smart chip to obtain the voltage and current induced by the interference of the interference signal U1 on the smart chip.

[0061] The specific derivation process is as follows:

[0062] For an alternating current with a frequency of f, when the delay time r / v is much smaller than the electromagnetic field period T=1 / f excited by the alternating current, the effect caused by the delay is very small and the induced electric field can be ignored.

[0063] Among them, r is the distance from the electric field strength measurement point to the emitting conductor; v is the propagation speed of electromagnetic waves in space.

[0064] After neglecting the delay effect, the quasi-steady-state electromagnetic field satisfies:

[0065]

[0066] Among them, E is the electric field intensity, H is the electric field intensity, D is the electric displacement vector, and B is the magnetic induction intensity.

[0067] In the quasi-steady-state field being solved, there are two media, namely, the emitting conductor (medium 1) and the air at the smart chip (medium 2), and the boundary conditions of the two meet the following requirements:

[0068] H 1t -H 2t =J S (2)

[0069] J S =σ·E(3)

[0070] (σ1+jωε1)E1e n =(σ2+jωε2)E2e n (4)

[0071] Among them, H 1t is the electric field strength of medium 1, H 2t is the electric field strength of medium 2, J s is the induced current density, σ is the conductivity, E is the electric field strength, σ1 is the conductivity of medium 1, σ2 is the conductivity of medium 2, ω is the signal angular velocity, ε1 is the dielectric constant of medium 1, ε2 is the dielectric constant of medium 2, E1 is the electric field strength of medium 1, E2 is the electric field strength of medium 2, j is the imaginary unit, e n is the unit voltage.

[0072] When the electromagnetic field in medium 1 remains unchanged and the skin effect of medium 2 is ignored, the induced electric field at a certain position in medium 2 at different transmission frequencies can be converted by the following formula:

[0073]

[0074] Among them, σ2' is the conductivity of medium 2 after finite element accelerated simulation, ω' is the signal angular velocity after finite element accelerated simulation, ε2' is the dielectric constant of medium 2 after finite element accelerated simulation, and E2' is the electric field intensity of medium 2 after finite element accelerated simulation;

[0075] Formula (5) can be simplified as:

[0076]

[0077] Combining equations (3) and (6), the induced current density at medium 2 is:

[0078]

[0079] Among them, f is the original frequency of the interference signal, and f' is the frequency of the interference signal after finite element accelerated simulation.

[0080] Substituting equation (7) into equation (6) yields the electric field intensity in medium 2:

[0081]

[0082] According to formula (8), we only need to know a finite element acceleration simulation multiple f / f' and the electric field strength E2' at the smart chip after scaling to obtain the actual electric field strength E2.

[0083] Steps 3 and 4 use the finite element method to solve the radiation electric field intensity. The finite element method is an electromagnetic field calculation method in the time domain. This method discretizes the integral form of the Maxwell equations, as shown in formula (9):

[0084]

[0085] in, is the electric field strength, is the electric field strength, is the electric flux, is the magnetic flux;

[0086] To obtain the numerical solution of this equation, the finite element method defines a finite computational domain, encloses the object to be solved in the computational domain, and then creates a suitable mesh partitioning strategy to divide the computational domain into many small mesh units. Taking the orthogonal hexahedral grid system as an example, the main grid segmentation view is visualized in the software, but the sub-grid settings are invisible, and they are set to be orthogonal to the main grid.

[0087] In electromagnetic field simulation, the grid voltage e and plane magnetic flux b are distributed on the main grid, while the electric flux d and electric field strength h are defined on the sub-grid. Repeat the operation steps in the figure on each grid plane and express all the calculation processes in the form of a matrix, and then introduce the topological matrix C as the spatial discretization spinor operator on the main grid. After obtaining the calculation topological matrix, the computer program can start to calculate the spatial electromagnetic field problem.

[0088] Then apply Ampere's law to the subgrid and define the spinor operator on the grid as Similarly, the remaining two equations in the Maxwell equations are discretized and the corresponding divergence operators S and Corresponding to the main grid and sub-grid respectively.

[0089] Electric field strength With magnetic flux The relationship is as follows:

[0090]

[0091] Where μ is the magnetic permeability of the medium.

[0092] In electromagnetic simulations, the magnetic flux in the mesh plane is distributed on the main grid, and the electric field strength It is defined on the sub-mesh, and each vertex of the sub-mesh is defined within the range of the main mesh.

[0093]

[0094] In the formula, is the defined electric field strength, li is the edge of the grid, and dl is the integration loop.

[0095] Therefore, the integral expression of equation (11) can be transformed into the grid equation (12).

[0096]

[0097] in, is the spinor operator corresponding to the subnet, is the electric field strength of the corresponding grid, is the electric displacement vector, is the current operator.

[0098] Step 2: The smart chip is a collection circuit board card or a circuit board card of a merging unit that processes measurement signals in power or communication equipment.

[0099] The characteristics of the finite element method used in step 4 are as follows:

[0100] When solving, the total radiation field is divided into the primary background field and the secondary scattered field, as shown in formula (13):

[0101] E=E P +E S (13)

[0102] Where E is the total interference field, E P is the primary background field, and ES is the secondary scattered field.

[0103] Taking the curl on both sides of equation (9) yields equation (10).

[0104]

[0105] Where σ is the conductivity, σ a =σ-σ0, σ0 is the background field conductivity, μ0 is the vacuum magnetic permeability, and ε is the dielectric constant.

[0106] After using the regular hexahedron rule to transform the finite element matrix, we can obtain equation (15) and calculate the secondary electric field to be solved.

[0107] Ae=q(15)

[0108] Among them, A is the stiffness matrix, e is the electric field to be solved, and q is the product of the mass matrix and the primary field. Specific embodiment:

[0110] Assume that the problem to be solved is the high-frequency oscillation impact interference signal U1 (as shown in the attached figure) that the high-voltage switch is often subjected to. Figure 1, amplitude 20kV) caused by the radiated electric field and its induced voltage. Then first keep the amplitude of signal U1 unchanged and increase the frequency by 10 times, that is, shorten its duration to 1 / 10 of the original, and obtain a new interference signal U2. U2 is introduced into the finite element magnetic field calculation model, flows through the conductor path, and the electric field strength measurement point is set at the smart chip of the calculation model to obtain the radiated electric field strength E2' generated by U2 (as shown in the attached Figure 2 ), and then E2' is obtained. Then, according to the multiple relationship between the frequencies of U1 and U2, the amplitude and time of E2' are scaled according to formula (8), and the radiation electric field intensity E2 caused by the actual action of U1 is restored (as shown in the attached figure). Figure 3 ), apply E2 to the smart chip (the structure of the smart chip mainly includes some charging capacitors and high-voltage circuits, and the core processing module includes optocouplers, operational amplifiers, FPGA core processing chips and several capacitors and resistors). When measuring the induced electrical quantity, the measurement point is set at the 5V chip port of the FPGA chip. Through the electromagnetic induction relationship, the voltage induced by the interference signal U1 on the 5V chip line on the smart chip can be obtained. Figure 4 The signal is compared with the specific engineering requirements or standard provisions to measure its electromagnetic compatibility performance.

[0111] The content of the present invention is not limited to the embodiments listed, and any equivalent changes made to the technical solution of the present invention by ordinary technicians in this field after reading the description of the present invention are covered by the claims of the present invention.

Claims

1. A method for emission coupling under the radiation electric field of the chip port inside the intelligent terminal, characterized in that: The specific steps are as follows: Step 1: Establish a finite element electromagnetic calculation model of a high-voltage switch intelligent terminal device, wherein the finite element electromagnetic calculation model includes a transmitting conductor, an intelligent chip, and a calculation module; the intelligent chip is arranged in a PCB board; and the electromagnetic parameters of the transmitting conductor and the intelligent chip are input into the calculation module; Step 2: After finite element accelerated simulation, the interference-causing signal is imported into the finite element electromagnetic calculation model, and the signal passes through the transmitting conductor. A measurement point is selected near the smart chip of the finite element electromagnetic calculation model as the electric field strength measurement point; Step 3: Perform finite element electromagnetic field calculation, collect the radiation electric field strength signal at the electric field strength measurement point near the smart chip, and restore the radiation electric field strength signal according to the finite element acceleration simulation multiple of the interference signal. The restored electric field strength signal is the actual radiation electric field strength signal of the measurement point under the interference signal; Step 4: Apply the actual radiation electric field signal of the measurement point obtained in step 3 to the smart chip of the finite element electromagnetic calculation model, calculate the voltage and current signals induced by the radiation electric field on the power port or transmission line of the smart chip, measure the current and voltage signals, and obtain the signal, that is, the induced electrical quantity signal.

2. According to claim 1, a method for coupling emission under the radiation electric field of the chip port inside the intelligent terminal is characterized in that: In step 3, the specific method for performing finite element accelerated simulation processing is: Assume that the problem to be solved is the radiated electric field and induced electrical quantity caused by the interference signal U1; First, the amplitude of signal U1 is kept unchanged, and then the frequency of signal U1 is increased to hundreds of MHz to obtain a new interference signal U2. U2 is imported into the finite element electromagnetic field calculation model for calculation. The radiation electric field strength E2' can be measured at the electric field strength measurement point near the smart chip. After obtaining E2', the radiation electric field strength E2 caused by the actual action of U1 is restored according to the multiple relationship between the frequencies of U1 and U2. E2 is applied to the smart chip to obtain the voltage and current induced by the interference of the interference signal U1 on the smart chip.

3. The method for coupling emission under the radiation electric field of the chip port inside the intelligent terminal according to claim 2, characterized in that: In step 3, the specific derivation process of finite element accelerated simulation is as follows: For an alternating current with a frequency of f, when the delay time r / v is much smaller than the period T = 1 / f of the electromagnetic field excited by the alternating current, the effect caused by the delay is very small and the induced electric field can be ignored; Among them, r is the distance from the electric field strength measurement point to the emitting conductor; v is the propagation speed of electromagnetic waves in space; After neglecting the delay effect, the quasi-steady-state electromagnetic field satisfies: Among them, E is the electric field intensity, H is the electric field intensity, D is the electric displacement vector, and B is the magnetic induction intensity; In the solved quasi-steady-state field, there are two media, namely, the emitting conductor as medium 1 and the air at the smart chip as medium 2. The boundary conditions of the two meet the following requirements: H 1t -H 2t =J S (2) J S =σ·E(3) (σ1+jωε1)E1e n =(σ2+jωε2)E2e n (4) Among them, H 1t is the electric field strength of medium 1, H 2t is the electric field strength of medium 2, J s is the induced current density, σ is the conductivity, E is the electric field strength, σ1 is the conductivity of medium 1, σ2 is the conductivity of medium 2, ω is the signal angular velocity, ε1 is the dielectric constant of medium 1, ε2 is the dielectric constant of medium 2, E1 is the electric field strength of medium 1, E2 is the electric field strength of medium 2, j is the imaginary unit, e n is the unit voltage. When the electromagnetic field in medium 1 remains unchanged and the skin effect of medium 2 is ignored, the induced electric field at a certain position in medium 2 at different transmission frequencies can be converted by the following formula: Among them, σ2' is the conductivity of medium 2 after finite element accelerated simulation, ω' is the signal angular velocity after finite element accelerated simulation, ε2' is the dielectric constant of medium 2 after finite element accelerated simulation, and E2' is the electric field intensity of medium 2 after finite element accelerated simulation; Formula (5) can be simplified as: Combining equations (3) and (6), the induced current density at medium 2 is: Among them, f is the original transmission frequency of the interference signal, and f' is the frequency of the interference signal after finite element accelerated simulation; Substituting equation (7) into equation (6) yields the electric field intensity in medium 2: According to formula (8), we only need to know the finite element acceleration simulation multiple f / f' and the electric field strength E2' at the smart chip after scaling to obtain the actual electric field strength E2.

4. The method for coupling emission under the radiation electric field of the chip port inside the intelligent terminal according to claim 3 is characterized in that: In step 3 and step 4, the finite element method is used to solve the radiation electric field intensity. The characteristics of the finite element method are as follows: When solving, the total radiation field is divided into the primary background field and the secondary scattered field, as shown in formula (9): E=E P +E S (9) Where E is the total interference field, E P is the primary background field, ES is the secondary scattered field; Taking the curl on both sides of equation (9) yields equation (10); Where σ is the conductivity, σ a =σ-σ0, σ0 is the background field conductivity, μ0 is the vacuum permeability, ε is the dielectric constant; After using the regular hexahedron rule to transform the finite element matrix, we can get equation (11) to calculate the secondary electric field to be solved; Ae=q (11) Among them, A is the stiffness matrix, e is the electric field to be solved, and q is the product of the mass matrix and the primary field.

5. The method for coupling emission under the radiation electric field of the chip port inside the intelligent terminal according to claim 4, characterized in that: The smart chip is an acquisition circuit board card for processing measurement signals in power or communication equipment.

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