Power module and vehicle with same

Abstract

The invention discloses a power module and a vehicle with the power module, the power module comprises a first substrate, a second substrate and at least one power chip, the first substrate comprises a first conductive layer, the first conductive layer comprises a plurality of first conductive areas arranged at intervals in an insulation mode, the second substrate and the first substrate are arranged in a stacked mode, and the power chip is arranged in the first conductive area. The first substrate comprises a first conductive area, the second substrate comprises a second conductive layer, the at least one power chip is arranged between the first substrate and the second substrate, the power chip comprises a first surface and a second surface which are opposite, the first surface is electrically connected with the corresponding first conductive area, and the second surface is electrically connected with the second conductive layer. The power module provided by the embodiment of the invention is excellent in heat dissipation performance.

Description

Technical Field

[0001] The present invention relates to the technical field of power modules, and in particular to a power module and a vehicle having the same. Background Art

[0002] A power module refers to a module formed by combining power electronic devices according to certain functions and then encapsulating them.

[0003] In the prior art, in order to lead out the current of power electronic devices, a bonding wire structure is usually adopted. Based on the above structure, during the power module assembly process, it is necessary to reserve bonding wire space and set a buffer structure, which increases the thickness of the power module and reduces the heat dissipation capacity of the power module. Summary of the invention

[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes a power module, which omits the wire bonding structure to improve the heat dissipation capacity of the power module and avoid short circuit, thereby solving the technical problem of poor heat dissipation capacity of the power module in the prior art.

[0005] The present invention also aims to provide a vehicle having the power module.

[0006] A power module according to an embodiment of the present invention includes: a first substrate, the first substrate includes a first conductive layer, the first conductive layer includes a plurality of first conductive regions arranged at insulating intervals; a second substrate, the second substrate is stacked with the first substrate, the second substrate includes a second conductive layer; at least one power chip, at least one of the power chips is arranged between the first substrate and the second substrate, the power chip includes a first surface and a second surface relative to each other, the first surface is electrically connected to the corresponding first conductive region, and the second surface is electrically connected to the second conductive layer.

[0007] According to the power module of the embodiment of the present invention, by setting the first substrate and the second substrate, the first surface of the power chip is directly electrically connected to the corresponding first conductive area and the second surface of the power chip is electrically connected to the second conductive layer, so that the current of the power chip can be led out while the bonding wire structure can be omitted, thereby eliminating the bonding wire space and the setting of the buffer structure, which is conducive to reducing the thickness of the power module and improving the heat dissipation capacity of the power module. In other words, the power module of the present application has a strong heat dissipation capacity.

[0008] In some embodiments, the power module includes a plurality of connection protrusions arranged at insulating intervals; a plurality of conductive parts are provided on the first surface, and each of the conductive parts is electrically connected to a corresponding first conductive region through the connection protrusions.

[0009] In some embodiments, the surface of the first conductive region used to set the connecting protrusion is a third surface, and the connecting protrusion is set in the third surface.

[0010] In some embodiments, the plurality of connecting protrusions and the plurality of first conductive regions are arranged in one-to-one correspondence.

[0011] In some embodiments, the connecting protrusions are metal protrusions.

[0012] In some embodiments, the height of the connecting protrusions ranges from 20 μm to 2 mm.

[0013] In some embodiments, the power module includes a first insulating member disposed between adjacent connecting protrusions and between adjacent first conductive regions.

[0014] In some embodiments, the power module further includes an intermediate insulating layer disposed between the first substrate and the second substrate.

[0015] In some embodiments, the multiple conductive parts include a gate and a source, the multiple connection protrusions include a first connection protrusion and a second connection protrusion, the first connection protrusion is arranged corresponding to the gate, the second connection protrusion is arranged corresponding to the source, a drain is provided on the second surface, and the drain is electrically connected to the second conductive layer.

[0016] In some embodiments, the power module further includes a first connection terminal, a second connection terminal and a third connection terminal, the first connection terminal is electrically connected to the first connection protrusion, the second connection terminal is electrically connected to the second connection protrusion, and the third connection terminal is electrically connected to the second conductive layer.

[0017] In some embodiments, the first substrate includes a first insulating layer and a first heat dissipation layer, and the first insulating layer is located between the first conductive layer and the first heat dissipation layer.

[0018] In some embodiments, the power module includes a plurality of the power chips, the plurality of the power chips are spaced apart between the first substrate and the second substrate, and a second insulating member is disposed between two adjacent power chips.

[0019] The vehicle according to the embodiment of the present invention is characterized by comprising the aforementioned power module.

[0020] The vehicle according to the embodiment of the present invention adopts the aforementioned power module to ensure the working performance of the vehicle and improve the safety of the vehicle.

[0021] Additional aspects and advantages of the invention will become apparent from the following description, or may be learned by practice of the invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0023] Figure 1 Schematic diagram of a power module according to some embodiments of the present invention.

[0024] Figure 2 FIG. 4 is an exploded view of a power module according to some embodiments of the present invention.

[0025] Figure 3 for Figure 2 A partial enlarged view of area Ⅰ in the middle.

[0026] Figure 4 Schematic diagram of a first substrate according to some embodiments of the present invention.

[0027] Figure 5 Schematic diagram of a second substrate according to some embodiments of the present invention.

[0028] Figure 6 It is a schematic diagram of the assembly of the second substrate, the power chip and the third connection terminal according to some embodiments of the present invention.

[0029] Figure 7 Schematic diagram of the assembly of the second substrate and the intermediate insulating layer according to some embodiments of the present invention.

[0030] Figure 8 Schematic diagram of the intermediate insulating layer after processing in some embodiments of the present invention.

[0031] Fig. 9 Schematic diagrams of power modules according to other embodiments of the present invention.

[0032] Reference numerals:

[0033] 1000. Power module;

[0034] 100. a first substrate;

[0035] 110, first conductive layer; 111, first conductive region; 1111, third surface;

[0036] 120, a first insulating layer;

[0037] 130. A first heat dissipation layer;

[0038] 200, second substrate; 210, second conductive layer; 220, second insulating layer; 230, second heat dissipation layer;

[0039] 300, power chip;

[0040] 310, first surface;

[0041] 320, second surface;

[0042] 400, connecting protrusion; 410, first connecting protrusion; 420, second connecting protrusion; 430, fourth surface;

[0043] 500, middle insulating layer; 510, first insulating member; 520, second insulating member;

[0044] 610, a first connection terminal; 620, a third connection terminal;

[0045] 710, first connection layer; 720, second connection layer; 730, third connection layer;

[0046] 800. Circumferential insulation layer. DETAILED DESCRIPTION

[0047] Embodiments of the present invention are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0048] In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0049] The power module 1000 according to the embodiment of the present invention will be described below with reference to the accompanying drawings.

[0050] like Figure 1 , Figure 2 and Figure 3 As shown, a power module 1000 according to an embodiment of the present invention includes: a first substrate 100 , a second substrate 200 and at least one power chip 300 .

[0051] Among them, Figure 1 , Figure 2 and Figure 4As shown, the first substrate 100 includes a first conductive layer 110, and the first conductive layer 110 includes a plurality of first conductive regions 111, and the plurality of first conductive regions 111 are arranged at insulated intervals. The insulated interval arrangement mentioned here means that the plurality of first conductive regions 111 are arranged at intervals and the plurality of first conductive regions 111 are insulated from each other to avoid electrical connection between the plurality of first conductive regions 111.

[0052] like Figure 1 , Figure 2 and Figure 5 As shown, the second substrate 200 is stacked with the first substrate 100, and the second substrate 200 includes a second conductive layer 210. The stacking mentioned here can be understood as the second substrate 200 and the first substrate 100 being stacked on each other, or the second substrate 200 being arranged on one side of the first substrate 100 and opposite to the first substrate 100.

[0053] like Figure 1 , Figure 2 and Figure 3 As shown, at least one power chip 300 is disposed between the first substrate 100 and the second substrate 200. The power chip 300 includes a first surface 310 and a second surface 320 opposite to each other. The first surface 310 is electrically connected to the corresponding first conductive region 111, and the second surface 320 is electrically connected to the second conductive layer 210. Here, it means that the first surface 310 of the power chip 300 is electrically connected to the first substrate 100 through the first conductive region 111, and the second surface 320 of the power chip 300 is electrically connected to the second substrate 200, thereby realizing the electrical connection between the power chip 300 and the first substrate 100 and the second substrate 200, facilitating the current extraction of the power chip 300 to ensure the working performance of the power chip 300.

[0054] That is to say, the power chip 300 of the present application is directly electrically connected to the first conductive layer 110 and the second conductive layer 210, and the wire bonding connection method is eliminated. In this way, while realizing the electrical connection between the power chip 300 and the first substrate 100 and the second substrate 200, there is no need to reserve installation space for the metal wires and set up a metal buffer layer structure, which facilitates reducing the distance between the first substrate 100 and the second substrate 200, thereby significantly reducing the height of the power module 1000 and reducing the stray inductance of the power module 1000, which is beneficial to improving the heat dissipation capacity of the power module 1000 and meeting the use requirements of larger currents.

[0055] At the same time, after the wire bonding connection method is eliminated, there will be no problem of deformation and easy damage of the metal wire, so as to improve the reliability of the power module 1000 and ensure the working performance of the power module 1000.

[0056] In addition, the present application arranges the power chip 300 between the first substrate 100 and the second substrate 200, so as to simultaneously utilize the first substrate 100 and the second substrate 200 to dissipate part of the heat generated by the power chip 300, thereby achieving the purpose of heat dissipation, further improving the heat dissipation efficiency and heat dissipation quality, thereby ensuring the safety of the use of the power chip 300 and extending the service life of the power chip 300.

[0057] As can be seen from the above structure, the power module 1000 of the embodiment of the present invention has a first substrate 100 and a second substrate 200 respectively disposed on opposite sides of the power chip 300. The first substrate 100 and the second substrate 200 cooperate to conduct part of the heat generated by the power chip 300 to achieve the purpose of heat dissipation.

[0058] By configuring the first substrate 100 to include a first conductive layer 110 and configuring the second substrate 200 to include a second conductive layer 210, the two relative surfaces of the power chip 300 can directly form an electrical connection with the first substrate 100 and the second substrate 200, thereby eliminating the need for bonding wires and a metal buffer layer structure. In this way, the height of the power module 1000 can be significantly reduced, the stray inductance of the power module 1000 can be reduced, and the heat dissipation capacity of the power module 1000 can be improved to meet the use requirements of a larger current.

[0059] At the same time, by eliminating the bonding wires and buffer layer structure, the structure of the power module 1000 can be simplified, the assembly difficulty of the power module 1000 can be reduced, the reliability of the power module 1000 can be improved, and the power module 1000 can meet the use requirements of a larger current.

[0060] That is to say, the power module 1000 of the present application has a simple structure, is easy to assemble and has good heat dissipation performance.

[0061] It can be understood that, compared with the prior art, the power module 1000 of the present application arranges a first substrate 100 and a second substrate 200 on opposite sides of the power chip 300, and directly electrically connects the first surface 310 of the power chip 300 to the corresponding first conductive region 111, and directly electrically connects the second surface 320 of the power chip 300 to the second conductive layer 210, so that there is no metal buffer layer structure commonly used in the industry between the upper surface of the power chip 300 and the first substrate 100, and between the lower surface of the power chip 300 and the second substrate 200. In this way, the height of the power module 1000 can be significantly reduced, the stray inductance of the power module 1000 can be reduced, and the heat dissipation capacity of the power module 1000 can be improved to meet the use requirements of larger currents.

[0062] It should be noted that since the first surface 310 of the power chip 300 is directly electrically connected to the first substrate 100, and the second surface 320 of the power chip 300 is directly electrically connected to the second substrate 200, the overall thickness of the power module 1000 of the present application can be achieved to 1.5 mm to 10 mm, so as to effectively reduce the stray inductance of the power module 1000 and improve the heat dissipation capacity of the power module 1000.

[0063] A minimum gap can be achieved between the first substrate 100 and the second substrate 200 , which is approximately equal to the thickness of the power chip 300 , and the thickness range can be 0.01 mm to 0.5 mm.

[0064] In some embodiments, Figure 1 , Figure 2 and Figure 4 As shown, the first substrate 100 includes a first insulating layer 120 and a first heat dissipation layer 130, and the first insulating layer 120 is located between the first conductive layer 110 and the first heat dissipation layer 130. In this way, while realizing the electrical connection between the first substrate 100 and the power chip 300, the first insulating layer 120 can also be used to block the electrical connection between the power chip 300 and other structural parts through the first substrate 100, thereby ensuring the working performance of the power chip 300, and the first heat dissipation layer 130 can also be used to improve the heat dissipation effect of the power chip 300, ensure the heat dissipation capacity, and improve the heat dissipation efficiency, so that the power module 1000 has a higher heat dissipation capacity.

[0065] At the same time, the first conductive layer 110, the first insulating layer 120 and the first heat dissipation layer 130 can cooperate to increase the structural strength of the first substrate 100, making it easier to use the first substrate 100 to protect the power chip 300, so as to extend the service life of the power chip 300. The first substrate 100 with high structural strength is also beneficial to extending the service life of the first substrate 100 itself, thereby extending the service life of the power module 1000.

[0066] In some embodiments, Figure 5 As shown, the second substrate 200 also includes a second insulating layer 220 and a second heat dissipation layer 230. The second insulating layer 220 is located between the second conductive layer 210 and the second heat dissipation layer 230. The second insulating layer 220 can prevent the power chip 300 from being electrically connected to other structural parts through the second substrate 200, thereby ensuring the working performance of the power chip 300. The second heat dissipation layer 230 can improve the heat dissipation effect of the power chip 300, and further ensure the heat dissipation capacity of the power module 1000.

[0067] At the same time, the second conductive layer 210, the second insulating layer 220 and the second heat dissipation layer 230 can cooperate to increase the structural strength of the second substrate 200, making it easier to use the second substrate 200 to protect the power chip 300, so as to extend the service life of the power chip 300. The second substrate 200 with high structural strength is also beneficial to extending the service life of the second substrate 200 itself, thereby extending the service life of the power module 1000.

[0068] That is to say, the present application arranges the power chip 300 between the first substrate 100 and the second substrate 200, which can not only improve the heat dissipation capacity of the power module 1000, but also utilize the first substrate 100 and the second substrate 200 to cooperate to protect the power chip 300, so as to extend the service life of the power chip 300.

[0069] Optionally, the first conductive layer 110 and the second conductive layer 210 are formed as metal layers to ensure the conductive properties of the first conductive layer 110 and the second conductive layer 210 .

[0070] Optionally, the first insulating layer 120 and the second insulating layer 220 can be made of insulating ceramics with high insulation strength, good thermal conductivity and stable chemical properties. This can not only ensure the insulation performance of the first insulating layer 120 and the second insulating layer 220, but also improve the heat dissipation effect of the first substrate 100 and the second substrate 200.

[0071] Optionally, the first heat dissipation layer 130 and the second heat dissipation layer 230 may be heat dissipation copper sheets, which are externally connected to a heat dissipation system to further enhance the heat dissipation capability of the power module 1000 .

[0072] It should be noted that the power chip 300 of the present application may be a power chip 300 with a gate, such as an insulated gate bipolar transistor, a metal oxide semiconductor field effect transistor or a silicon carbide chip.

[0073] In the description of the present invention, unless otherwise specified, "plurality" means at least two.

[0074] In some embodiments, Figure 1 , Figure 2 and Figure 3 As shown, the power module 1000 includes a plurality of connection protrusions 400, and the plurality of connection protrusions 400 are arranged at insulation intervals; a plurality of conductive parts are arranged on the first surface 310, and each conductive part is electrically connected to the corresponding first conductive region 111 through the connection protrusion 400. The insulation interval arrangement mentioned here means that the plurality of connection protrusions 400 are arranged at intervals and the plurality of connection protrusions 400 are insulated from each other to avoid electrical connection between the plurality of connection protrusions 400.

[0075] It is worth noting that since a plurality of conductive parts are provided on the first surface 310 of the power chip 300, the present application provides a plurality of connecting protrusions 400 provided at insulating intervals, and electrically connects each conductive part to the corresponding first conductive area 111 through the connecting protrusion 400. In this way, while realizing the electrical connection between the power chip 300 and the first substrate 100, the connection precision and accuracy between the first conductive area 111 and the conductive part can be improved, thereby avoiding the short circuit of the power chip 300 caused by the formation of electrical connection between the power chip 300 and the first substrate 100 due to the formation of electrical connection between the multiple conductive parts, thereby improving the yield rate of the power module 1000 and ensuring the working performance of the power module 1000.

[0076] That is to say, by providing a plurality of connecting protrusions 400 with insulating intervals, the electrical connection between the plurality of first conductive regions 111 and the plurality of conductive parts is realized by utilizing the plurality of connecting protrusions 400. In this way, while realizing the electrical connection between the power chip 300 and the first substrate 100, the short circuit of the power chip 300 due to the connection of the plurality of conductive parts can be avoided, thereby improving the yield of the power module 1000 and ensuring the working performance of the power module 1000.

[0077] At the same time, after the conductive part is electrically connected to the corresponding first conductive area 111 through the connecting protrusion 400, the connecting protrusion 400 and the first conductive layer 110 can cooperate to ensure the overcurrent capacity to avoid failure of the power module 1000, thereby improving the safety performance of the power module 1000.

[0078] In some embodiments, in combination Figure 2 and Figure 3 As shown, the surface of the first conductive region 111 for arranging the connection protrusion 400 is the third surface 1111, and the connection protrusion 400 is arranged in the third surface 1111. Here, it means that the connection protrusion 400 is arranged on the first conductive region 111 and is located in the third surface 1111, wherein the connection protrusion 400 is arranged on the first conductive region 111, so that while the connection protrusion 400 is electrically connected to the first conductive layer 110, the first substrate 100 can also be used to support the connection protrusion 400 to improve the position stability of the connection protrusion 400, so as to facilitate the use of the connection protrusion 400 to realize the electrical connection between the first conductive layer 110 and the conductive part.

[0079] At the same time, the connecting protrusion 400 is arranged in the third surface 1111. It can be understood that the connecting protrusion 400 is connected to the third surface 1111 and the edge of the connecting protrusion 400 does not exceed the edge of the third surface 1111, so as to reduce the area of ​​the connecting protrusion 400 and avoid the connecting protrusion 400 from forming an electrical connection with the adjacent conductive part when connecting to the conductive part, that is, avoiding a short circuit between multiple conductive parts due to electrical connection, thereby ensuring the yield and working performance of the power module 1000.

[0080] In addition, the above configuration can also make the area of ​​the third surface 1111 larger, which is beneficial to improving the conductivity of the first conductive region 111 and ensuring the current carrying capacity of the first substrate 100, so that the power module 1000 can meet the use requirements of a larger current.

[0081] In some embodiments, the area of ​​the connecting protrusion 400 is smaller than the area of ​​the corresponding first conductive layer 110, so that the connecting protrusion 400 is arranged in the third surface 1111, avoiding electrical connection between multiple conductive parts when connected to the first conductive layer 110, and ensuring the current carrying capacity of the first conductive layer 110.

[0082] In the description of the present invention, features limited to "first", "second", "third" and "fourth" may explicitly or implicitly include one or more of the features, and are used to distinguish and describe the features, without any order or importance.

[0083] In some embodiments, the surface of each connecting protrusion 400 facing the conductive portion is a fourth surface 430 , and the area of ​​the fourth surface 430 is smaller than the area of ​​the third surface 1111 , thereby arranging the connecting protrusion 400 within the third surface 1111 .

[0084] In some embodiments, Figure 3 As shown, a plurality of connection protrusions 400 and a plurality of first conductive regions 111 are arranged in a one-to-one correspondence, so as to ensure that each first conductive region 111 can be electrically connected to the conductive portion of the power chip 300 through the connection protrusion 400, improve the connection accuracy between the first conductive region 111 and the conductive portion, thereby avoiding the formation of electrical connection between the plurality of conductive portions, and ensuring the yield and working performance of the power module 1000.

[0085] Optionally, the plurality of connection protrusions 400, the plurality of first conductive regions 111 and the plurality of conductive parts are arranged in a one-to-one correspondence. In other words, the number of the plurality of connection protrusions 400, the plurality of first conductive regions 111 and the plurality of conductive parts is consistent, so as to further ensure the connection accuracy between the first conductive regions 111 and the conductive parts, and avoid electrical connection between the plurality of conductive parts.

[0086] Of course, in some other embodiments, the number of the plurality of connection protrusions 400 may be set to be greater than the number of the plurality of first conductive regions 111. That is, the plurality of connection protrusions 400 and the plurality of first conductive regions 111 are not arranged in a one-to-one correspondence, and each conductive portion may be electrically connected to the corresponding first conductive region 111 through the plurality of connection protrusions 400, so that the power chip 300 and the first substrate 100 are electrically connected, and the connection strength and connection quality between the first conductive region 111 and the conductive portion can be improved.

[0087] In some embodiments, the connection protrusion 400 is a metal protrusion. The metal protrusion makes the connection protrusion 400 form a conductive member, so that it is convenient to use the connection protrusion 400 to realize the electrical connection between the first conductive area 111 and the conductive part, that is, it is convenient to use the first conductive area 111 to lead out the current of the power chip 300, so as to ensure the working performance of the power chip 300.

[0088] In other embodiments, the connection protrusion 400 and the first conductive layer 110 are formed as an integral piece. That is, the connection protrusion 400 and the first conductive layer 110 are made by an integral molding process or a secondary etching process, so that while the connection protrusion 400 and the first conductive region 111 are electrically connected, the connection difficulty of the connection protrusion 400 and the first conductive region 111 can be reduced, the connection efficiency can be improved, and the connection strength between the connection protrusion 400 and the first conductive region 111 can be ensured, and a short circuit can be avoided between the connection protrusion 400 and the first conductive layer 110, so as to ensure the yield rate of the power module 1000.

[0089] In some embodiments, the height of the connection protrusion 400 is in the range of 20 μm to 2 mm. When the height of the connection protrusion 400 is less than 20 μm, the connection protrusion 400 cannot be effectively used to realize the electrical connection between the first conductive region 111 and the conductive portion, which reduces the yield of the power module 1000; when the height of the connection protrusion 400 is greater than 2 mm, the thickness of the power module 1000 increases, which is not conducive to ensuring the heat dissipation capacity of the power module 1000, and can also increase the manufacturing cost of the power module 1000.

[0090] Therefore, the present application sets the protrusion height of the connecting protrusion 400 to 20μm~2mm. While ensuring that the connecting protrusion 400 can effectively realize the electrical connection between the first conductive area 111 and the conductive part, the thickness of the power module 1000 can be reduced, thereby improving the heat dissipation capacity of the power module 1000 and reducing the manufacturing cost of the power module 1000.

[0091] In a specific example, the bump height of the connection bump 400 may be 20 μm, 100 μm, 1 mm, or 2 mm.

[0092] Optionally, the effective contact area between the fourth surface 430 and the conductive portion is greater than or equal to a preset contact area corresponding to the maximum allowable current to ensure the overcurrent capacity of the connecting protrusion 400 and avoid failure of the power module 1000, thereby improving the safety performance of the power module 1000.

[0093] It should be noted that the present application does not impose specific restrictions on the area of ​​the fourth surface 430 of the connecting protrusion 400. That is to say, the present application does not limit the length and width of the connecting protrusion 400. During the manufacturing process of the connecting protrusion 400, the area of ​​the fourth surface 430 can be adaptively designed according to the area of ​​the conductive part, so as to facilitate the use of the connecting protrusion 400 to achieve electrical connection between the first conductive region 111 and the conductive part.

[0094] In some embodiments, in combination Figure 1 , Figure 2 and Figure 3 As shown, the power module 1000 includes a first insulating member 510, and the first insulating member 510 is disposed between adjacent connection protrusions 400 and between adjacent first conductive regions 111. That is, the first insulating member 510 is filled between adjacent connection protrusions 400, and the first insulating member 510 enables multiple connection protrusions 400 to be arranged in an insulating interval to prevent multiple connection protrusions 400 from forming an electrical connection, thereby further preventing multiple conductive parts from forming an electrical connection, ensuring the yield of the power module 1000, and ensuring the working performance of the power module 1000.

[0095] At the same time, the first insulating member 510 is disposed between adjacent first conductive regions 111 so that the plurality of first conductive regions 111 are disposed with insulating intervals to avoid electrical connection between the plurality of first conductive regions 111 and further avoid electrical connection between the plurality of conductive portions.

[0096] Optionally, combined Figure 1 , Figure 2 and Figure 3 As shown, the first insulating member 510 is disposed between adjacent conductive parts. That is, the first insulating member 510 is not only filled between adjacent connection protrusions 400, but also filled between adjacent first conductive regions 111 and between adjacent conductive parts, so as to further avoid multiple conductive parts from being electrically connected during assembly.

[0097] At the same time, the first insulating member 510 is filled between adjacent connecting protrusions 400, between adjacent first conductive regions 111, and between adjacent conductive parts. The first insulating member 510 can also be used to fix the connecting protrusions 400, the first conductive layer 110, and the conductive parts, thereby improving the position stability of the connecting protrusions 400, the first substrate 100, and the power chip 300, so that the relative positions of the connecting protrusions 400, the first substrate 100, and the power chip 300 are stable, thereby ensuring the working performance of the power module 1000.

[0098] In some embodiments, Figure 1 and Figure 2As shown, the power module 1000 further includes an intermediate insulating layer 500, which is disposed between the first substrate 100 and the second substrate 200. The intermediate insulating layer 500 can effectively prevent discharge or leakage between the first substrate 100 and the second substrate 200, thereby improving the reliability of the power module 1000, and can also play a fixing role, so that the first substrate 100 and the second substrate 200 are stable in position in the thickness direction.

[0099] Optionally, a portion of the intermediate insulating layer 500 is filled between the plurality of connecting protrusions 400 to define a first insulating member 510. In this way, while the plurality of connecting protrusions 400 form an insulating fit, the molding and assembly difficulties of the first insulating member 510 can be reduced, thereby improving the assembly efficiency of the power module 1000.

[0100] In some embodiments, a portion of the intermediate insulating layer 500 is filled between the plurality of first conductive regions 111 and between the plurality of conductive portions.

[0101] It should be noted that, combined with Figure 6 , Figure 7 and Figure 8 As shown, during the assembly of the power module 1000, after the second substrate 200 is connected to the power chip 300, an intermediate insulating layer 500 can be firstly arranged on the side of the second substrate 200 close to the power chip 300 and the intermediate insulating layer 500 covers the power chip 300, and then a hole is punched in the area of ​​the intermediate insulating layer 500 facing the conductive part to expose the conductive part, so as to facilitate the connection of the conductive part and the connecting protrusion 400, and after the above-mentioned punching is completed, a first insulating member 510 can be formed to fill between adjacent connecting protrusions 400, between adjacent first conductive regions 111 and between adjacent conductive parts.

[0102] Optionally, the intermediate insulating layer 500 is a high molecular polymer with excellent insulating properties. The high molecular polymer is formed on the side of the second substrate 200 close to the power chip 300 by spraying, spin coating and lamination and covers the power chip 300. At the same time, the intermediate insulating layer 500 can also have sufficient insulating voltage resistance.

[0103] Optionally, the punching mentioned above may be laser punching, exposure punching or mechanical drilling.

[0104] It should also be noted that, combined with Figure 1 and Figure 2 As shown, after the middle insulating layer 500 is punched, the first substrate 100 is connected to the second substrate 200 , and the connecting protrusions 400 are connected to the corresponding conductive parts to form a power module 1000 .

[0105] In some embodiments, the plurality of conductive portions include a gate and a source, such as Figure 3 As shown, the plurality of connection protrusions 400 include a first connection protrusion 410 and a second connection protrusion 420. The first connection protrusion 410 is arranged corresponding to the gate electrode, and the second connection protrusion 420 is arranged corresponding to the source electrode. This facilitates the electrical connection between the first connection protrusion 410 and the gate electrode and the electrical connection between the second connection protrusion 420 and the source electrode, thereby achieving the electrical connection between the power chip 300 and the first substrate 100, so as to lead out the current of the power chip 300.

[0106] In a specific example, the first surface 310 between the gate and the source is etched to form a groove, and the first insulating member 510 is filled in the groove, thereby isolating and insulating the gate and the source to avoid electrical connection between the gate and the source, that is, avoiding electrical connection between multiple conductive parts, thereby ensuring that the multiple conductive parts can be effectively insulated and coordinated to avoid short circuits.

[0107] Optionally, combined Figure 1 , Figure 2 and Figure 3 As shown, a first connection layer 710 is provided between the first connection protrusion 410 and the gate, and two sides of the first connection layer 710 are electrically connected to the first connection protrusion 410 and the gate respectively to achieve electrical connection between the first connection protrusion 410 and the gate.

[0108] Optionally, the first connection layer 710 is formed as a welding layer to achieve welding cooperation between the first connection protrusion 410 and the gate, which can ensure the connection strength between the first connection protrusion 410 and the gate while achieving electrical connection between the first connection protrusion 410 and the gate.

[0109] Optionally, combined Figure 1 , Figure 2 and Figure 3 As shown, a second connection layer 720 is provided between the second connection protrusion 420 and the source electrode, and the two sides of the second connection layer 720 are electrically connected to the second connection protrusion 420 and the source electrode respectively, so as to realize the electrical connection between the second connection protrusion 420 and the source electrode. The specific form of the second connection layer 720 can refer to the first connection layer 710, and will not be repeated here.

[0110] Optionally, a drain is provided on the second surface 320, and the drain is electrically connected to the second conductive layer 210. This realizes the electrical connection between the second surface 320 and the second conductive layer 210, that is, the electrical connection between the power chip 300 and the second substrate 200, so as to facilitate the current of the power chip 300 to be extracted.

[0111] Optionally, combined Figure 1 , Figure 2 and Figure 3As shown, a third connection layer 730 is provided between the drain and the second conductive layer 210, and two sides of the third connection layer 730 are electrically connected to the drain and the second conductive layer 210, respectively, so as to realize electrical connection between the drain and the second conductive layer 210. The specific form of the third connection layer 730 can also refer to the first connection layer 710, which will not be described in detail here.

[0112] In some embodiments, the first connection layer 710 , the second connection layer 720 , and the third connection layer 730 may all be silver sintering layers, tin soldering layers, or other conductive connection layers.

[0113] In some embodiments, in combination Figure 1 , Figure 2 and Figure 6 As shown, the power module 1000 further includes a first connection terminal 610, a second connection terminal and a third connection terminal 620, wherein the first connection terminal 610 is electrically connected to the first connection protrusion 410, the second connection terminal is electrically connected to the second connection protrusion 420, and the third connection terminal 620 is electrically connected to the second conductive layer 210. This allows the current of the gate, drain and source to be drawn out, thereby facilitating the electrical connection between the power module 1000 and external structural components and ensuring the working performance of the power module 1000.

[0114] In summary, the present application directly sets a connecting terminal, and directly connects the connecting terminal to the metal layer to lead out the current of the power chip 300, without the need for conduction through wires, thereby avoiding problems such as wire deformation and damage, thereby improving the reliability of the power module 1000 and ensuring the working performance of the power module 1000.

[0115] In some embodiments, the second connecting terminal includes a first connecting plate and a second connecting plate (not shown in the figure), both of which are electrically connected to the second connecting protrusion 420, the area of ​​the first connecting plate is larger than that of the second connecting plate, the first connecting plate is used to draw out large current, and the other second connecting plate is suitable for connecting to an external driving board to ensure the working performance of the power chip 300.

[0116] In some embodiments, Figure 1 , Figure 2 and Figure 6 As shown, the power module 1000 includes a plurality of power chips 300, and the plurality of power chips 300 are arranged between the first substrate 100 and the second substrate 200, and a second insulating member 520 is arranged between two adjacent power chips 300 to avoid electrical connection between the two adjacent power chips 300, thereby ensuring the working performance of the power chips 300.

[0117] In some embodiments, a portion of the intermediate insulating layer 500 is filled between two adjacent power chips 300 to define a second insulating member 520. In this way, while achieving insulation matching of multiple power chips 300, the molding and assembly difficulties of the second insulating member 520 can be reduced, thereby improving the assembly efficiency of the power module 1000.

[0118] In summary, the intermediate insulating layer 500 of the present application is filled between the first substrate 100 and the second substrate 200, and part of the intermediate insulating layer 500 is located between adjacent power chips 300, between adjacent connecting protrusions 400, between adjacent first conductive areas 111, and between adjacent conductive parts to avoid electrical connection of structural parts that need to be set with insulating intervals, thereby avoiding short circuits.

[0119] Alternatively, if Figure 1 As shown, a portion of the intermediate insulating layer 500 is filled between the first connecting terminal 610 and the second substrate 200 and between the third connecting terminal 620 and the first substrate 100 to avoid electrical connection between the first connecting terminal 610 and the second conductive layer 210 of the second substrate 200 and to avoid electrical connection between the third connecting terminal 620 and the first conductive layer 110 of the first substrate 100.

[0120] In some embodiments, Fig. 9 As shown, the power module 1000 further includes a circumferential insulating layer 800 , which is disposed at both ends of the first substrate 100 and the second substrate 200 to enhance the insulation effect of the power module 1000 and ensure the performance of the power module 1000 .

[0121] Optionally, the circumferential insulating layer 800 may be made of a material with excellent insulating properties (such as plastic, rubber, etc.) to ensure the insulating properties of the circumferential insulating layer 800 .

[0122] Next, a vehicle according to an embodiment of the present invention will be described.

[0123] A vehicle according to an embodiment of the present invention includes: a power module 1000 .

[0124] The power module 1000 is the aforementioned power module 1000 , and the specific structure of the power module 1000 is not described in detail here.

[0125] It can be seen from the above structure that the vehicle according to the embodiment of the present invention adopts the aforementioned power module 1000 to ensure the working performance of the vehicle and improve the safety of the vehicle.

[0126] It should be noted that when the power module 1000 is used in a vehicle, the power module 1000 can be connected to the vehicle's drive circuit and motor respectively. The drive circuit drives the power module 1000 to work, and the current of the motor is changed by changing the conduction duty cycle of the power module 1000, thereby changing the motor's speed and the motor's output power, thereby ensuring the vehicle's working performance.

[0127] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0128] The specific structure and function of the power module 1000 and other components of the vehicle having the same, such as the power chip 300 , according to the embodiment of the present invention are known to those skilled in the art and will not be described in detail here.

[0129] In the description of this specification, the description with reference to the terms "embodiment", "example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0130] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A power module, characterized in that: include: A first substrate, the first substrate comprising a first conductive layer, the first conductive layer comprising a plurality of first conductive regions arranged at insulating intervals; a second substrate, the second substrate being stacked with the first substrate, the second substrate comprising a second conductive layer; At least one power chip is disposed between the first substrate and the second substrate, the power chip comprises a first surface and a second surface relative to each other, the first surface is electrically connected to the corresponding first conductive region, and the second surface is electrically connected to the second conductive layer.

2. The power module according to claim 1, characterized in that: The power module includes a plurality of connection protrusions arranged at insulating intervals; A plurality of conductive parts are disposed on the first surface, and each of the conductive parts is electrically connected to a corresponding first conductive region through the connecting protrusion.

3. The power module according to claim 2, characterized in that: The surface of the first conductive region used to set the connecting protrusion is a third surface, and the connecting protrusion is arranged in the third surface.

4. The power module according to claim 2, characterized in that: The plurality of connecting protrusions and the plurality of first conductive regions are arranged in one-to-one correspondence.

5. The power module according to claim 2, characterized in that: The connecting protrusion is a metal protrusion.

6. The power module according to claim 2, characterized in that: The height of the connecting protrusions ranges from 20 μm to 2 mm.

7. The power module according to claim 2, characterized in that: The power module includes a first insulating member disposed between adjacent connecting protrusions and between adjacent first conductive regions.

8. The power module according to claim 1, characterized in that: The power module includes an intermediate insulating layer disposed between the first substrate and the second substrate.

9. The power module according to claim 2, characterized in that: The multiple conductive parts include a gate and a source, the multiple connection protrusions include a first connection protrusion and a second connection protrusion, the first connection protrusion is arranged corresponding to the gate, the second connection protrusion is arranged corresponding to the source, a drain is arranged on the second surface, and the drain is electrically connected to the second conductive layer.

10. The power module according to claim 9, characterized in that: The power module includes a first connection terminal, a second connection terminal and a third connection terminal, the first connection terminal is electrically connected to the first connection protrusion, the second connection terminal is electrically connected to the second connection protrusion, and the third connection terminal is electrically connected to the second conductive layer.

11. The power module according to claim 1, characterized in that: The first substrate includes a first insulating layer and a first heat dissipation layer, and the first insulating layer is located between the first conductive layer and the first heat dissipation layer.

12. The power module according to claim 1, characterized in that: The power module includes a plurality of the power chips, the plurality of the power chips are arranged between the first substrate and the second substrate at intervals, and a second insulating member is arranged between two adjacent power chips.

13. A vehicle, characterized in that: The invention comprises a power module according to any one of claims 1 to 12.

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