Dual-frequency dual-polarization low-profile patch antenna

Abstract

The invention relates to the technical field of antennas, in particular to a dual-frequency dual-polarization low-profile patch antenna. The dual-frequency dual-polarization low-profile patch antenna comprises a first dielectric substrate, a middle metal layer and a second dielectric substrate which are sequentially arranged, the first dielectric substrate is provided with a patch resonator and a plurality of metalized through holes, and the middle metal layer, the patch resonator and the metalized through holes jointly form an SIW resonator. The middle metal layer is provided with a first gap and a second gap. The second dielectric substrate is provided with two first microstrip resonators and two second microstrip resonators. The two first microstrip resonators are respectively used for externally connecting electromagnetic signals in different polarization directions, and the two second microstrip resonators are respectively coupled with the patch resonator and the SIW resonator through the first gap and the second gap. According to the dual-frequency dual-polarization low-profile patch antenna provided by the invention, the problems of high overall profile thickness and large size of the existing dual-frequency dual-polarization patch antenna are solved.

Description

Technical Field

[0001] The present application relates to the field of antenna technology, and in particular to a dual-frequency dual-polarization low-profile patch antenna. Background Art

[0002] The dual-band dual-polarized patch antenna has dual-band operating characteristics and dual-polarized radiation characteristics. Therefore, it can enable frequency reuse to enhance system capacity and use polarization diversity to mitigate the impact of multipath fading and improve transmit and receive isolation. These advantages of the dual-band dual-polarized patch antenna make it have important application value in wireless communication systems represented by 5G base stations.

[0003] In the prior art, methods for realizing a dual-band dual-polarization patch antenna include: using L-shaped probes and slots to perform orthogonal feeding on multiple stacked patch antenna units; introducing radiation structures of different frequency bands on the upper patch and the bottom metal floor respectively; and covering the patch antenna with a dual-band dual-polarization frequency selective surface.

[0004] However, the dual-band dual-polarization patch antenna designed in the above manner has the problems of high overall profile thickness and large antenna size, which limits its application scope in practical engineering. Therefore, the development of dual-band, dual-polarization and low-profile patch antennas is of great significance for wireless communication systems represented by 5G base stations. Summary of the invention

[0005] The present application provides a dual-frequency dual-polarization low-profile patch antenna, which solves the problems of high overall cross-sectional thickness and large size of the existing dual-frequency dual-polarization patch antenna.

[0006] The dual-frequency dual-polarization low-profile patch antenna provided in the present application includes: a first dielectric substrate, an intermediate metal layer, and a second dielectric substrate. A patch resonator and a plurality of metallized through holes are arranged on the first dielectric substrate, and the metallized through holes extend to the patch resonator.

[0007] The middle metal layer is arranged on a side of the first dielectric substrate away from the patch resonator, and has a first gap and a second gap on the middle metal layer.

[0008] The middle metal layer, the patch resonator and each metallized through hole together constitute a SIW resonator.

[0009] The second dielectric substrate is arranged on a side of the intermediate metal layer away from the first dielectric substrate, and two first microstrip resonators and two second microstrip resonators are arranged on a side of the second dielectric substrate away from the intermediate metal layer. The first microstrip resonators are coupled with the second microstrip resonators correspondingly, and the resonance frequency bands of the first microstrip resonators and the second microstrip resonators are different.

[0010] The two first microstrip resonators are respectively used for externally connecting electromagnetic signals with different polarization directions. The first gap and the second gap correspond to the two second microstrip resonators respectively. The two second microstrip resonators are coupled with the patch resonator and the SIW resonator through the first gap and the second gap respectively.

[0011] In one possible implementation, the dual-frequency dual-polarization low-profile patch antenna provided by the present application has a first section on the first microstrip resonator, a second section on the second microstrip resonator, a gap between the first section and the second section, and the first microstrip resonator and the second microstrip resonator are coupled through the gap between the first section and the second section.

[0012] In a possible implementation, in the dual-frequency dual-polarization low-profile patch antenna provided by the present application, the first section and the second section are parallel to each other, and both ends of the first section are flush with both ends of the second section.

[0013] In a possible implementation, in the dual-frequency dual-polarization low-profile patch antenna provided by the present application, the gaps between the first sections of the two first microstrip resonators and the second sections of the corresponding second microstrip resonators are equal.

[0014] In a possible implementation, in the dual-frequency dual-polarization low-profile patch antenna provided by the present application, the first slot and the second slot are respectively oriented toward the projections of the corresponding second microstrip resonator, and are partially located on the second microstrip resonator.

[0015] In a possible implementation, in the dual-frequency dual-polarization low-profile patch antenna provided by the present application, two second microstrip resonators are symmetrically arranged along the projections of the first slot and the second slot, respectively.

[0016] In a possible implementation, in the dual-band dual-polarization low-profile patch antenna provided by the present application, the first slot and the second slot are both rectangular, and the first slot and the second slot are respectively located on central axes of the middle metal layer that are perpendicular to each other.

[0017] In one possible implementation, the dual-frequency dual-polarization low-profile patch antenna provided by the present application also includes two feed lines, which are arranged on a side of the second dielectric substrate away from the intermediate metal layer, and the two feed lines are electrically connected to the two first microstrip resonators respectively, and the two first microstrip resonators are respectively connected to electromagnetic signals of different polarization directions through the feed lines.

[0018] In a possible implementation, in the dual-frequency dual-polarization low-profile patch antenna provided by the present application, the patch resonator and the SIW resonator are both circular.

[0019] In a possible implementation, in the dual-frequency dual-polarization low-profile patch antenna provided by the present application, the patch resonator and the SIW resonator are arranged concentrically.

[0020] The dual-frequency dual-polarization low-profile patch antenna provided by the present application is provided by sequentially arranging a first dielectric substrate, an intermediate metal layer, and a second dielectric substrate. A patch resonator and a plurality of metallized through holes are provided on the first dielectric substrate. The metallized through holes extend to the patch resonator. The intermediate metal layer, the patch resonator, and the metallized through holes together constitute a SIW resonator. Two first microstrip resonators and two second microstrip resonators are provided on the second dielectric substrate. The first microstrip resonator and the second microstrip resonator have different resonant frequency bands. Since the first microstrip resonator and the second microstrip resonator are coupled correspondingly, electromagnetic signals can be transmitted between the first resonator and the second resonator, so that the first microstrip resonator and the second microstrip resonator can work at their respective different frequency bands, thereby realizing dual-band characteristics. The middle metal layer has a first slot and a second slot, and the two first microstrip resonators are respectively used to connect electromagnetic signals of different polarization directions, and the two second microstrip resonators are respectively coupled with the patch resonator and the SIW resonator through the first slot and the second slot, thereby realizing the dual-polarization characteristics, and the structure is compact, reducing the overall cross-sectional thickness of the antenna and reducing the size of the antenna. The dual-frequency dual-polarization low-profile patch antenna provided by the present application has dual-polarization and dual-band characteristics, and solves the problem of high overall cross-sectional thickness and large size of the existing dual-frequency dual-polarization patch antenna. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0022] Figure 1 A schematic diagram of the structure of a dual-frequency dual-polarization low-profile patch antenna provided in an embodiment of the present application;

[0023] Figure 2 for Figure 1 A partial explosion diagram of

[0024] Figure 3 for Figure 2 A schematic structural diagram of a second dielectric substrate;

[0025] Figure 4 for Figure 2 Schematic diagram of the structure of the intermediate metal layer;

[0026] Figure 5 for Figure 2 A schematic structural diagram of the first dielectric substrate;

[0027] Figure 6The S-parameters, gain simulation and test result diagram of the dual-band dual-polarization low-profile patch antenna provided in the embodiment of the present application;

[0028] Figure 7 Simulation and test radiation direction of the dual-frequency dual-polarization low-profile patch antenna provided in the embodiment of the present application Figure 1 ;

[0029] Figure 8 Simulation and test radiation direction of the dual-frequency dual-polarization low-profile patch antenna provided in the embodiment of the present application Figure 2 .

[0030] Description of reference numerals:

[0031] 100-first dielectric substrate; 110-patch resonator; 120-SIW resonator;

[0032] 200 - middle metal layer; 210 - first gap; 220 - second gap; 230 - third gap; 240 - fourth gap;

[0033] 300- a second dielectric substrate;

[0034] 310-first microstrip resonator; 311-first section;

[0035] 320 - second microstrip resonator; 321 - second section;

[0036] 330-Feeder.

[0037] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0038] First, those skilled in the art should understand that these implementations are only used to explain the technical principles of the present application and are not intended to limit the scope of protection of the present application. Those skilled in the art can make adjustments to them as needed to adapt to specific application scenarios.

[0039] Secondly, it should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, or it can be an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0040] Then, it should be noted that, in the description of the present application, the terms "upper", "lower", "front", "back", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application.

[0041] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0042] As shown in the background technology, in the prior art, the methods of realizing a dual-band dual-polarization patch antenna include: using L-shaped probes and slots to orthogonally feed multiple stacked patch antenna units; introducing radiation structures of different frequency bands on the upper patch and the bottom metal floor respectively; and covering the patch antenna with a dual-band dual-polarization frequency selective surface.

[0043] However, the dual-band dual-polarization patch antenna designed in the above manner has the problems of high overall cross-sectional thickness and large antenna size, which limits its application scope in practical engineering.

[0044] Based on this, the dual-frequency dual-polarization low-profile patch antenna provided by the present application is provided by sequentially setting a first dielectric substrate, an intermediate metal layer and a second dielectric substrate, a patch resonator and a plurality of metallized through holes are provided on the first dielectric substrate, the metallized through holes extend to the patch resonator, and the intermediate metal layer, the patch resonator and the metallized through holes together constitute a SIW resonator. Two first microstrip resonators and two second microstrip resonators are provided on the second dielectric substrate, and the first microstrip resonator and the second microstrip resonator have different resonant frequency bands. Since the first microstrip resonator and the second microstrip resonator are correspondingly coupled, electromagnetic signals can be transmitted between the first resonator and the second resonator, so that the first microstrip resonator and the second microstrip resonator can work in their respective different frequency bands, thereby realizing dual-band characteristics. The middle metal layer has a first slot and a second slot, and the two first microstrip resonators are respectively used to connect electromagnetic signals of different polarization directions, and the two second microstrip resonators are respectively coupled with the patch resonator and the SIW resonator through the first slot and the second slot, thereby realizing the dual-polarization characteristics, and the structure is compact, reducing the overall cross-sectional thickness of the antenna and reducing the size of the antenna. The dual-frequency dual-polarization low-profile patch antenna provided by the present application has dual-polarization and dual-band characteristics, and solves the problem of high overall cross-sectional thickness and large size of the existing dual-frequency dual-polarization patch antenna.

[0045] It should be noted that the SIW (Substrate Integrated Waveguide) resonator is a waveguide structure based on a dielectric substrate. SIW technology integrates a waveguide structure on a dielectric substrate to make the patch antenna compact, low-loss and easy to manufacture, which is particularly suitable for applications in microwave and millimeter wave bands. 11 A mode is a specific pattern of electromagnetic waves propagating in a waveguide or resonant cavity.

[0046] In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described in more detail below in conjunction with the drawings in the preferred embodiments of the present application. In the drawings, the same or similar reference numerals throughout represent the same or similar parts or parts with the same or similar functions. The described embodiments are part of the embodiments of the present application, not all of the embodiments. The embodiments described below with reference to the drawings are exemplary and are intended to be used to explain the present application, and should not be construed as limitations on the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0047] Reference Figure 1 and Figure 2As shown, the dual-frequency dual-polarization low-profile patch antenna provided in the present application includes: a first dielectric substrate 100, an intermediate metal layer 200 and a second dielectric substrate 300, and a patch resonator 110 and a plurality of metallized through holes are arranged on the first dielectric substrate 100, and the metallized through holes extend to the patch resonator 110.

[0048] The intermediate metal layer 200 is disposed on a side of the first dielectric substrate 100 away from the patch resonator 110 , and has a first slot 210 and a second slot 220 . The intermediate metal layer 200 , the patch resonator 110 and the metallized through holes together constitute the SIW resonator 120 .

[0049] The second dielectric substrate 300 is arranged on a side of the intermediate metal layer 200 away from the first dielectric substrate 100. Two first microstrip resonators 310 and two second microstrip resonators 320 are arranged on a side of the second dielectric substrate 300 away from the intermediate metal layer 200. The first microstrip resonator 310 is coupled to the second microstrip resonator 320 correspondingly, and the first microstrip resonator 310 and the second microstrip resonator 320 have different resonant frequency bands.

[0050] The two first microstrip resonators 310 are respectively used to connect to electromagnetic signals with different polarization directions. The first slot 210 and the second slot 220 correspond to the two second microstrip resonators 320 respectively. The two second microstrip resonators 320 are coupled with the patch resonator 110 and the SIW resonator 120 via the first slot 210 and the second slot 220 respectively.

[0051] It can be understood that the dual-frequency dual-polarization low-profile patch antenna provided in the embodiment of the present application receives electromagnetic signals of different polarization directions through two first microstrip resonators 310, and can simultaneously support two orthogonal polarization modes (such as horizontal and vertical polarization), thereby realizing dual-polarization characteristics and improving the flexibility and anti-interference ability of data transmission.

[0052] The first microstrip resonator 310 and the second microstrip resonator 320 have different resonant frequency bands, so that the patch antenna can operate in two different frequency bands. The first microstrip resonator 310 and the second microstrip resonator 320 are coupled to each other and can resonate in different frequency bands, thereby realizing dual-band characteristics. In a specific implementation, the resonance points of the first microstrip resonator 310 and the second microstrip resonator 320 can be located at high frequency and low frequency respectively. The TM of the SIW resonator 120 11 Die and Patch Resonator 110 TM 11 The modes can also be located at high frequency and low frequency respectively, so that the patch antenna has the characteristics of dual-frequency filtering.

[0053] It should be noted that the intermediate metal layer 200, the patch resonator 110 and the metallized through holes together constitute the SIW resonator 120, and the two second microstrip resonators 320 are coupled with the patch resonator 110 and the SIW resonator 120 through the first slot 210 and the second slot 220 on the intermediate metal layer 200, respectively. The structure is compact, the overall cross-sectional thickness of the antenna is reduced, and the size of the antenna is reduced.

[0054] It should also be noted that the shapes and material properties of the first microstrip resonator 310 and the second microstrip resonator 320 determine their resonant frequencies, and by changing the above conditions, the first microstrip resonator 310 and the second microstrip resonator 320 can respectively operate in different frequency bands. The first microstrip resonator 310 and the second microstrip resonator 320 are coupled, and electromagnetic signals can be transmitted between the first resonator and the second resonator, so that the first microstrip resonator 310 and the second microstrip resonator 320 can operate in their respective different frequency bands.

[0055] Specifically, the dual-frequency dual-polarization low-profile patch antenna provided in the embodiment of the present application includes a first polarization channel and a second polarization channel. When the first polarization channel is used, a horizontally polarized high-frequency signal can be transmitted to the first first microstrip resonator 310, the first first microstrip resonator 310 is excited and resonates, and the high-frequency signal is coupled to the first second microstrip resonator 320, and the SIW resonator 120 is excited through the first slot 210 on the intermediate metal layer 200, and the TM of the SIW resonator 120 is resonated. 11 The horizontally polarized low-frequency signal is transmitted to the first microstrip resonator 310, which is excited and resonates, coupling the low-frequency signal to the first second microstrip resonator 320, and exciting the patch resonator 110 through the first slit 210 on the intermediate metal layer 200, so that the TM of the patch resonator 110 11 The mode is stimulated to resonate and thus radiate.

[0056] When the second polarization channel is used, the vertically polarized high-frequency signal can be transmitted to the second first microstrip resonator 310, the second first microstrip resonator 310 is excited and resonates, the high-frequency signal is coupled to the second second microstrip resonator 320, and the SIW resonator 120 is excited through the second slot 220 on the intermediate metal layer 200, the TM of the SIW resonator 120 11The vertically polarized low-frequency signal is transmitted to the second first microstrip resonator 310, which is excited and resonates, coupling the low-frequency signal to the second second microstrip resonator 320, and exciting the patch resonator 110 through the second slit 220 on the middle metal layer 200, and the TM of the patch resonator 110 11 The mode is stimulated to resonate and thus radiate. Therefore, the dual-frequency dual-polarization low-profile patch antenna provided in the embodiment of the present application has dual-polarization and dual-band characteristics, and solves the problem of high overall profile thickness and large size of the existing dual-frequency dual-polarization patch antenna.

[0057] In some embodiments, reference Figure 3 As shown, the first microstrip resonator 310 has a first section 311 , the second microstrip resonator 320 has a second section 321 , a gap is provided between the first section 311 and the second section 321 , and the first microstrip resonator 310 and the second microstrip resonator 320 are coupled via the gap between the first section 311 and the second section 321 .

[0058] It should be noted that by setting a gap between the first section 311 and the second section 321, the first microstrip resonator 310 and the second microstrip resonator 320 can achieve gap coupling. By adjusting the size of the gap between the first section 311 and the second section 321, the coupling strength between the first microstrip resonator 310 and the second microstrip resonator 320 can be controlled.

[0059] It should also be noted that gap coupling allows effective signal transmission within a specific frequency range, and signals of specific frequencies can be selectively coupled by adjusting the gap, thereby achieving a filtering function to enhance frequency selectivity.

[0060] In some embodiments, reference Figure 3 As shown, the first section 311 and the second section 321 are parallel to each other, and two ends of the first section 311 are flush with two ends of the second section 321 .

[0061] It can be understood that the first section 311 and the second section 321 are parallel and flush, which increases the coupling area between the first microstrip resonator 310 and the second microstrip resonator 320, thereby enhancing the electromagnetic coupling efficiency and improving the efficiency of signal transmission between the first microstrip resonator 310 and the second microstrip resonator 320.

[0062] It should be noted that the first section 311 and the second section 321 are parallel to each other and can also form a uniform electric field distribution in the coupling region, reducing the problem of excessively high or low local field strength, thereby improving the performance stability of the first microstrip resonator 310 and the second microstrip resonator 320.

[0063] In some embodiments, reference Figure 3 As shown, the gaps between the first sections 311 of the two first microstrip resonators 310 and the corresponding second sections 321 of the second microstrip resonators 320 are equal.

[0064] It can be understood that the equal gaps make the coupling strength between the first section 311 of each pair of the first microstrip resonator 310 and the second section 321 of the second microstrip resonator 320 consistent, so that they have similar frequency response characteristics within the same frequency range.

[0065] In some embodiments, reference Figures 2 to 4 As shown, the first slot 210 and the second slot 220 are respectively oriented toward the projections of the corresponding second microstrip resonator 320 , and are partially located on the second microstrip resonator 320 .

[0066] Specifically, by setting the first slot 210 and the second slot 220, the signal can be coupled from the second microstrip resonator 320 to the patch resonator 110 or the SIW resonator 120 within the shortest path, thereby optimizing the transmission path, reducing signal loss and delay, and improving the overall performance of the patch antenna.

[0067] It should be noted that the size of the intermediate metal layer 200 may be the same as that of the second dielectric substrate 300 , and the corresponding edges of the intermediate metal layer 200 and the second dielectric substrate 300 are flush.

[0068] In some embodiments, reference Figure 2 As shown, the two second microstrip resonators 320 are symmetrically arranged along the projections of the first slot 210 and the second slot 220 .

[0069] It can be understood that the symmetrical arrangement of the second microstrip resonator 320 can make the electromagnetic field near the first gap 210 or the second gap 220 more evenly distributed, thereby helping to improve the transmission efficiency of electromagnetic energy and making the coupling between the second microstrip resonator 320 and the patch resonator 110 or the SIW resonator 120 more effective.

[0070] It should be noted that the symmetrical structure can also reduce signal reflection and loss caused by asymmetry, so that the signal can be transmitted more smoothly from the second microstrip resonator 320 to the patch resonator 110 or the SIW resonator 120, thereby reducing energy loss.

[0071] In some embodiments, reference Figure 4 As shown, the first gap 210 and the second gap 220 are both rectangular, and the first gap 210 and the second gap 220 are respectively located on the central axes of the middle metal layer 200 which are perpendicular to each other.

[0072] Specifically, the first gap 210 is located on the first central axis of the intermediate metal layer 200, and the second gap 220 is located on the second central axis of the intermediate metal layer 200. The first central axis and the second central axis are perpendicular to each other, which can reduce interference between signals to ensure the orthogonality of the signal path, thereby reducing electromagnetic interference between adjacent signal channels.

[0073] It should be noted that a third gap 230 and a fourth gap 240 may also be provided on the intermediate metal layer 200. The third gap 230 and the first gap 210 are symmetrically arranged relative to the second central axis of the intermediate metal layer 200, and the fourth gap 240 and the second gap 220 are symmetrically arranged relative to the first central axis of the intermediate metal layer 200. This not only balances the intermediate metal layer 200, but also the two second microstrip resonators 320 may correspond to the third gap 230 and the fourth gap 240, respectively, thereby improving the applicability of the intermediate metal layer 200.

[0074] In some embodiments, reference Figure 3 As shown, the dual-frequency dual-polarization low-profile patch antenna also includes two feed lines 330, which are arranged on a side of the second dielectric substrate 300 away from the intermediate metal layer 200, and the two feed lines 330 are electrically connected to the two first microstrip resonators 310 respectively, and the two first microstrip resonators 310 are respectively connected to electromagnetic signals of different polarization directions through the feed lines 330.

[0075] Specifically, two feed lines 330 are provided to be electrically connected to the two first microstrip resonators 310, respectively, and electromagnetic signals of different polarization directions are externally connected through the two feed lines 330, so that the patch antenna can simultaneously receive and transmit electromagnetic signals of two different polarization directions (for example, horizontal and vertical polarization). The dual polarization function enables the patch antenna to process signals of multiple polarizations in the same frequency band, thereby improving the flexibility and data capacity of the system.

[0076] In some embodiments, reference Figure 5 As shown, both the patch resonator 110 and the SIW resonator 120 are circular.

[0077] It should be noted that the circular structure helps to form a uniform electromagnetic field distribution inside the patch resonator 110 and the SIW resonator 120, improve the quality factor of the patch resonator 110 and the SIW resonator 120, thereby enhancing its frequency selectivity and reducing energy loss. Compared with other shapes, the circular structure can also effectively reduce the impact of edge effects, further improving the performance of the patch resonator 110 and the SIW resonator 120.

[0078] In some embodiments, reference Figure 5 As shown, the patch resonator 110 and the SIW resonator 120 are arranged concentrically.

[0079] It should be noted that the concentric structure can make the distribution of the electromagnetic field more symmetrical and concentrated, and can further improve the frequency stability and selectivity of the patch resonator 110 and the SIW resonator 120 .

[0080] Reference Figure 6 As shown, the dual-frequency dual-polarization low-profile patch antenna provided in the embodiment of the present application has a center frequency of about 3.54 GHz. For the first polarization channel, the 10 dB impedance bandwidth of the low-frequency channel is 1.13% (3.3-3.34 GHz), and the 10-dB impedance bandwidth of the high-frequency channel is 1.98% (3.73-3.80 GHz). For the second polarization channel, the 10 dB impedance bandwidth of the low-frequency channel is 1.13% (3.31-3.35 GHz), and the 10 dB impedance bandwidth of the high-frequency channel is 1.69% (3.74-3.80 GHz). As a result, the actual gains of the first polarization channel and the second polarization channel are stabilized at 7.7-8.3 dBi and 7.4-8 dBi respectively, the gain isolation level is maintained above 15 dBi, and the isolation level between polarization channels is greater than 16 dB.

[0081] Reference Figure 7 and Figure 8 As shown, the maximum radiation direction of the dual-frequency dual-polarization low-profile patch antenna within the passband remains consistent, and the cross-polarization level in the maximum radiation direction is lower than -18dB. It should be noted that the dual-frequency dual-polarization low-profile patch antenna provided in the embodiment of the present application is not limited to working in the above-mentioned frequency bands. As needed, the radius of the patch resonator 110, the radius of the SIW resonator 120, the length of the first microstrip resonator 310, and the length of the second microstrip resonator 320 can be adjusted so that the patch antenna can work in other frequency bands. Therefore, the dual-frequency dual-polarization low-profile patch antenna provided in the embodiment of the present application achieves the requirements of dual-band, high gain, high channel isolation, etc. while ensuring a low profile and a compact structure, and can be suitable for use in 5G communication base stations.

[0082] It can be understood by those skilled in the art that the dual-frequency dual-polarization low-profile patch antenna provided by the present application is provided by sequentially arranging a first dielectric substrate 100, an intermediate metal layer 200 and a second dielectric substrate 300, a patch resonator 110 and a plurality of metallized through holes are provided on the first dielectric substrate 100, the metallized through holes extend to the patch resonator 110, and the intermediate metal layer 200, the patch resonator 110 and the metallized through holes together constitute a SIW resonator 120. Two first microstrip resonators 310 and two second microstrip resonators 320 are provided on the second dielectric substrate 300, and the resonance frequency bands of the first microstrip resonator 310 and the second microstrip resonator 320 are different. Since the first microstrip resonator 310 and the second microstrip resonator 320 are coupled correspondingly, an electromagnetic signal can be transmitted between the first resonator and the second resonator, so that the first microstrip resonator 310 and the second microstrip resonator 320 can work at their respective different frequency bands, thereby realizing dual-band characteristics. The middle metal layer 200 has a first slot 210 and a second slot 220, and the two first microstrip resonators 310 are respectively used to externally connect electromagnetic waves of different polarization directions, and the two second microstrip resonators 320 are respectively coupled with the patch resonator 110 and the SIW resonator 120 through the first slot 210 and the second slot 220, thereby realizing the dual-polarization characteristic, and the structure is compact, the overall cross-sectional thickness of the antenna is reduced, and the size of the antenna is reduced. The dual-frequency dual-polarization low-profile patch antenna provided by the present application has dual-polarization and dual-band characteristics at the same time, and solves the problem of high overall cross-sectional thickness and large size of the existing dual-frequency dual-polarization patch antenna.

[0083] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0084] It should be understood that the various numerical numbers involved in the embodiments of the present application are only used for the convenience of description and are not used to limit the scope of the embodiments of the present application.

[0085] So far, the technical solutions of the present application have been described in conjunction with the preferred embodiments shown in the accompanying drawings. However, it is easy for those skilled in the art to understand that the protection scope of the present application is obviously not limited to these specific embodiments. Without departing from the principles of the present application, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present application.

Claims

1. A dual-frequency dual-polarization low-profile patch antenna, characterized in that: include: A first dielectric substrate (100), wherein a patch resonator (110) and a plurality of metallized through holes are provided on the first dielectric substrate (100), wherein the metallized through holes extend to the patch resonator (110); An intermediate metal layer (200) is arranged on a side of the first dielectric substrate (100) facing away from the patch resonator (110), the intermediate metal layer (200) having a first slit (210) and a second slit (220); the intermediate metal layer (200), the patch resonator (110) and each of the metallized through holes together constitute a SIW resonator (120); A second dielectric substrate (300) is arranged on a side of the intermediate metal layer (200) away from the first dielectric substrate (100); two first microstrip resonators (310) and two second microstrip resonators (320) are arranged on a side of the second dielectric substrate (300) away from the intermediate metal layer (200); the first microstrip resonators (310) and the second microstrip resonators (320) are coupled correspondingly; and the first microstrip resonators (310) and the second microstrip resonators (320) have different resonant frequency bands; The two first microstrip resonators (310) are respectively used to externally connect electromagnetic signals with different polarization directions, the first slot (210) and the second slot (220) respectively correspond to the two second microstrip resonators (320), and the two second microstrip resonators (320) are coupled with the patch resonator (110) and the SIW resonator (120) via the first slot (210) and the second slot (220).

2. The dual-frequency dual-polarization low-profile patch antenna according to claim 1, characterized in that: The first microstrip resonator (310) is provided with a first section (311), the second microstrip resonator (320) is provided with a second section (321), a gap is provided between the first section (311) and the second section (321), and the first microstrip resonator (310) and the second microstrip resonator (320) are coupled via the gap between the first section (311) and the second section (321).

3. The dual-frequency dual-polarization low-profile patch antenna according to claim 2, characterized in that: The first section (311) and the second section (321) are parallel to each other, and two ends of the first section (311) are flush with two ends of the second section (321).

4. The dual-frequency dual-polarization low-profile patch antenna according to claim 2, characterized in that: The gaps between the first sections (311) of the two first microstrip resonators (310) and the corresponding second sections (321) of the second microstrip resonators (320) are equal.

5. The dual-frequency dual-polarization low-profile patch antenna according to any one of claims 1 to 4, characterized in that: The first slot (210) and the second slot (220) are respectively projected toward the corresponding second microstrip resonator (320), and are partially located on the second microstrip resonator (320).

6. The dual-frequency dual-polarization low-profile patch antenna according to claim 5, characterized in that: The two second microstrip resonators (320) are symmetrically arranged along the projections of the first slot (210) and the second slot (220).

7. The dual-frequency dual-polarization low-profile patch antenna according to claim 6, characterized in that: The first slit (210) and the second slit (220) are both rectangular, and the first slit (210) and the second slit (220) are respectively located on mutually perpendicular central axes of the intermediate metal layer (200).

8. The dual-frequency dual-polarization low-profile patch antenna according to any one of claims 1 to 4, characterized in that: It also comprises two feed lines (330), the feed lines (330) being arranged on a side of the second dielectric substrate (300) facing away from the intermediate metal layer (200), the two feed lines (330) being electrically connected to the two first microstrip resonators (310) respectively, and the two first microstrip resonators (310) being externally connected to electromagnetic signals of different polarization directions via the feed lines (330).

9. The dual-frequency dual-polarization low-profile patch antenna according to any one of claims 1 to 4, characterized in that: The patch resonator (110) and the SIW resonator (120) are both circular.

10. The dual-frequency dual-polarization low-profile patch antenna according to claim 9, characterized in that: The patch resonator (110) and the SIW resonator (120) are arranged concentrically.

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