A circuit control method and device, storage medium and electronic equipment

Abstract

The application discloses a circuit control method and device, a storage medium and an electronic device. The method comprises the following steps: obtaining a phase lag angle and a resonance frequency of equivalent impedance; obtaining a theoretical conduction duration based on the phase lag angle and the resonance frequency; obtaining a load voltage, a power supply voltage, a transformation ratio and an actual conduction duration; when the load voltage is less than a target voltage, reducing the actual conduction duration by a unit duration to obtain a first conduction duration; determining a target conduction duration based on the first conduction duration and the theoretical conduction duration; when the load voltage is greater than a preset voltage, increasing the actual conduction duration by a unit duration to obtain a second conduction duration; determining the target conduction duration based on the second conduction duration and a half-cycle duration; and controlling a working state of a switch tube in a target circuit by using the target conduction duration. By using the application, the charging feedback phenomenon of the target circuit is controlled, so that the target circuit can still work in a high-gain state during charging and discharging, and the working performance of the target circuit is improved.

Description

Technical Field

[0001] This application relates to the field of power electronic converter technology, and in particular to a circuit control method, device, storage medium and electronic equipment. Background Technology

[0002] Nowadays, electronic devices are playing an increasingly important role in people's daily lives. When using energy storage batteries to power electronic devices, a common practice is to use micro-inverters to connect photovoltaics and share the load of the energy storage batteries or to charge the energy storage batteries. Summary of the Invention

[0003] This application provides a circuit control method, apparatus, storage medium, and electronic device, which can control the operating state of the switching transistor in the target circuit based on the conduction time of the target circuit. According to the switching of the switching transistor between conduction and closure, the charging feedback phenomenon of the target circuit can be suppressed or enhanced, thereby ensuring that the target circuit can still operate in a high-gain state during charging and discharging, and improving the working performance of the target circuit.

[0004] In a first aspect, embodiments of this specification provide a circuit control method, the method comprising:

[0005] Obtain the phase lag angle of the equivalent impedance of the target circuit and the resonant frequency of the resonant circuit. Based on the phase lag angle and the resonant frequency, obtain the theoretical conduction time of the target circuit.

[0006] Obtain the load voltage of the load circuit, the power supply voltage in the power supply circuit, the transformer ratio in the target circuit, and the actual conduction time of the target circuit;

[0007] When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain a first conduction time. The target conduction time is determined based on a first comparison result obtained by comparing the first conduction time with the theoretical conduction time. The target voltage is obtained based on the power supply voltage and the transformer ratio.

[0008] When the load voltage is greater than the preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time. The target conduction time is determined based on the second comparison result obtained by comparing the second conduction time with the half-cycle time. The preset voltage is obtained based on the target voltage and a preset voltage reference value. The cycle time is the conduction period of the resonant circuit, which is calculated according to the cycle calculation formula and the resonant frequency. The half-cycle time is half of the cycle time.

[0009] The operating state of the switching transistor in the target circuit is controlled by the target conduction duration.

[0010] Secondly, embodiments of this specification provide a circuit control device, comprising:

[0011] The theoretical duration acquisition unit is used to acquire the phase lag angle of the equivalent impedance of the target circuit and the resonant frequency of the resonant circuit, and to obtain the theoretical conduction duration of the target circuit based on the phase lag angle and the resonant frequency.

[0012] The actual duration acquisition unit is used to acquire the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformer ratio in the target circuit, and the actual conduction duration of the target circuit.

[0013] The target conduction duration acquisition unit is used to, when the load voltage is less than the target voltage, reduce the actual conduction duration by a preset unit duration to obtain a first conduction duration, and determine the target conduction duration by comparing the first conduction duration with the theoretical conduction duration to obtain a first comparison result. The target voltage is obtained by multiplying the power supply voltage and the transformer ratio.

[0014] The target duration acquisition unit is further configured to, when the load voltage is greater than the preset voltage, add a preset unit duration to the actual conduction duration to obtain a second conduction duration, and determine the target conduction duration by comparing the second conduction duration with the half-cycle duration to obtain a second comparison result. The preset voltage is obtained by adding the target voltage and the preset voltage reference value. The cycle duration is the conduction period of the resonant circuit, which is calculated according to the cycle calculation formula and the resonant frequency. The half-cycle duration is half of the cycle duration.

[0015] A switching circuit control unit is used to control the operating state of the switching transistor in the target circuit using the target on-time.

[0016] Thirdly, embodiments of this specification provide a computer storage medium storing a plurality of instructions adapted for loading by a processor and executing the steps of the method described above.

[0017] Fourthly, embodiments of this specification provide an electronic device, including: a processor and a memory; wherein the memory stores a computer program adapted to be loaded by the processor and to execute the steps of the method described above.

[0018] In this application, specific circuit parameters of the target circuit are obtained, and the theoretical conduction time and actual conduction time are obtained based on these specific circuit parameters. The target conduction time is obtained based on the comparison results of the load voltage and power supply voltage of the target circuit and the comparison results of the theoretical conduction time and actual conduction time. Thus, the working state of the switching transistor in the target circuit is controlled based on the conduction time of the target circuit. According to the switching of the switching transistor, the charging feedback phenomenon of the target circuit is suppressed or enhanced, thereby ensuring that the target circuit can still work in a high-gain state during charging and discharging, and improving the working performance of the target circuit. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments or prior art of this specification, the drawings used in the description of the embodiments or prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this specification. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 A system architecture diagram of a circuit control method provided in the embodiments of this specification;

[0021] Figure 2 This is a schematic diagram illustrating an example of a target circuit provided in an embodiment of this specification.

[0022] Figure 3 This is a schematic diagram illustrating an example of an original circuit provided in an embodiment of this specification.

[0023] Figure 4 A schematic flowchart illustrating a circuit control method provided in an embodiment of this specification;

[0024] Figure 5 This specification provides a flowchart illustrating the process of determining the target conduction duration in an embodiment.

[0025] Figure 6 A schematic flowchart illustrating another circuit control method provided in the embodiments of this specification;

[0026] Figure 7 This is a schematic diagram of the structure of a circuit control device provided in the embodiments of this specification;

[0027] Figure 8 A schematic diagram of the structure of a theoretical duration acquisition unit provided in the embodiments of this specification;

[0028] Figure 9 This is a schematic diagram of the structure of an electronic device provided in an embodiment of this specification. Detailed Implementation

[0029] To make the features and advantages of this application more apparent and understandable, the technical solutions in the embodiments of this specification will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0030] In existing technologies, when using micro-inverters to supply power to loads such as electrical equipment after photovoltaic access, there is a charging feedback phenomenon. When the circuit is operating in reverse, it cannot smoothly deliver energy to the load, affecting the circuit's operation.

[0031] Based on this, the embodiments of this specification provide a circuit control method. By acquiring circuit parameters such as the hysteresis angle and resonant frequency of the target circuit, the load voltage of the load circuit, the power supply voltage in the target circuit, the transformer ratio in the target circuit, and the actual conduction time of the target circuit, the theoretical conduction time and the actual conduction time are obtained based on these circuit parameters. Based on the comparison results of the load voltage and the power supply voltage of the target circuit and the comparison results of the theoretical conduction time and the actual conduction time, the target conduction time is obtained. Thus, based on the conduction time of the target circuit, the operating state of the switching transistor in the target circuit is controlled to switch between conduction and closure, thereby enhancing or suppressing the charging feedback phenomenon of the target circuit, ensuring that the target circuit can still operate in a high-gain state during charging and discharging, and improving the working performance of the target circuit.

[0032] Please see Figure 1 This is a system structure diagram of a circuit control system provided in an embodiment of this specification. Figure 1 As shown, the circuit control method provided in the embodiments of this specification can be applied to a charging and discharging device to realize the process of controlling the state of the switching transistor in the resonant circuit of the charging and discharging device. The system structure provided in the embodiments of this specification mainly includes a charging and discharging device, an energy storage battery, a user load, and a solar panel + micro-inverter. The charging and discharging device can be a circuit device including a resonant circuit and a switching transistor, used to control the voltage supplied to the charging and discharging device by the solar panel + micro-inverter and the user load; the solar panel + micro-inverter is used to supply energy to the user load, for example, electrical energy; the energy storage battery is used to supply energy, for example, electrical energy, when the energy provided by the solar panel + micro-inverter to the user load is insufficient; the user load can be any energy-consuming circuit that needs to obtain energy from the solar panel + micro-inverter or the energy storage battery to operate.

[0033] The charging / discharging device includes a control circuit, which comprises a target circuit and a power supply circuit. The target circuit includes a load circuit and a resonant circuit. The target circuit can be an equivalent circuit obtained by equivalent transformation of the original circuit, and it is connected to the power supply circuit. The control circuit can be a circuit used to control various components in the charging / discharging device. The resonant circuit can be a circuit used to control the conduction time of the switching transistors in the resonant circuit converter, and can also include capacitors, resistors, and transformers.

[0034] The target circuit can be, for example, Figure 2 As shown, Figure 2 It includes the resonant capacitor C. r The equivalent capacitance C of the primary-side switching transistor j Resonant inductor L r Magnetizing inductance L m Load resistance R bus The power supply outputs a voltage that, after being converted by an equivalent transformer, yields the target voltage n*V. sec Where n is the transformer turns ratio in the resonant circuit, V sec It can be the power supply voltage, magnetizing inductance L m The inductance of the equivalent transformer and the resonant capacitance C r The equivalent capacitance C of the primary-side switching transistor j Resonant inductor L r Magnetizing inductance L m and load resistance R bis Connection relationships such as Figure 2 As shown, the equivalent transformer can be a component used to raise or lower the output voltage of the power supply circuit according to the transformation ratio. The specific values ​​of each parameter can be obtained by directly detecting the target circuit.

[0035] The power supply circuit can be used to transfer electrical energy output from the energy storage battery to the target circuit, providing power to both the target circuit and the load circuit. Understandably, when the microinverter generates a charging feedback effect on the solar panel, the power supply circuit can also be used to transfer electrical energy to the energy storage battery.

[0036] The original circuit can be a circuit including a resonant circuit connected to a micro-inverter and a power supply circuit connected to an energy storage battery. By adjusting the conduction state of the switching transistor in the resonant circuit of the charging and discharging device to enhance or suppress the charging feedback phenomenon, the target circuit can be obtained by equivalent transformation of the original circuit. The original circuit can be as follows: Figure 3 As shown, Figure 3 The original circuit includes a resonant circuit, primary-side switches (Q1, Q2, Q3, Q4) and secondary-side switches (Q5, Q6, Q7, Q8), and the primary-side switches are connected to the load circuit V. busConnected to the secondary-side switching transistor and the power supply V of the energy storage battery. bat Connected.

[0037] The charging feedback phenomenon refers to the phenomenon where some electrical energy is fed back to the battery through the primary-side switch when the battery is powered. The charging feedback phenomenon can be amplified by increasing the duration of the primary-side switch being turned on, and suppressed by increasing the duration of the primary-side switch being turned off.

[0038] In the embodiments of this specification, specific circuit parameters in the target circuit are obtained, and the theoretical conduction time and actual conduction time are calculated based on these circuit parameters. Based on the transformer ratio of the target circuit in the circuit parameters, the load voltage and the power supply voltage are compared to obtain a voltage comparison result. Based on the voltage comparison result, the theoretical conduction time and the actual conduction time are compared to obtain a duration comparison result. Based on the duration comparison result, the actual conduction time is adjusted to obtain the target conduction time. The target conduction time is used to control the working state of the switching transistor in the target circuit. By controlling the switching transistor's on and off states, the charging feedback phenomenon of the target circuit is suppressed or enhanced, thereby ensuring that the target circuit can still operate in a high-gain state during charging and discharging, and improving the working performance of the target circuit.

[0039] based on Figure 1 The system architecture shown below will be combined with... Figure 4 This specification provides a detailed description of the circuit control methods provided in the embodiments.

[0040] Please see Figure 4 This is a flowchart illustrating a circuit control method provided in an embodiment of this specification. Figure 4 As shown, the method may include the following steps S101-S105.

[0041] S101, obtain the phase lag angle of the equivalent impedance of the target circuit and the resonant frequency of the resonant circuit, and obtain the theoretical conduction time of the target circuit based on the phase lag angle and the resonant frequency.

[0042] In one embodiment, the resonant frequency of the resonant circuit is obtained, and the angular velocity corresponding to the equivalent impedance is calculated according to the preset angular velocity calculation formula and the resonant frequency. The equivalent impedance value and equivalent capacitive reactance value of the target circuit are obtained, and the phase lag angle of the equivalent impedance is calculated according to the preset first calculation formula and the equivalent impedance value and the equivalent capacitive reactance value. The theoretical conduction time corresponding to the resonant circuit is calculated according to the preset second calculation formula and the phase lag angle and angular velocity.

[0043] The angular velocity can be calculated based on a preset angular velocity calculation formula and the resonant frequency. The angular velocity calculation formula can be formula (1):

[0044] ω=2π·fr Formula (1)

[0045] Where ω is the angular velocity and fr is the resonant frequency. The resonant frequency can be the resonant angular frequency of the resonant circuit, calculated using the frequency calculation formula and the equivalent inductance L in the resonant circuit. r Equivalent capacitance C r The frequency is calculated using formula (2):

[0046]

[0047] The first calculation formula can be formula (3):

[0048]

[0049] Where α can be the phase lag angle, R eq X can be the equivalent impedance value of the target circuit. eq It can be the equivalent capacitance-inductance value of the equivalent impedance, used to indicate the capacitance and inductance values ​​in the target circuit.

[0050] For example, a feasible method for obtaining the equivalent impedance and equivalent capacitive reactance values ​​can be as follows: First, obtain the load impedance of the load circuit and the switching impedance of the switching transistor circuit. Then, calculate the equivalent impedance value of the target circuit based on the load impedance and switching impedance using a preset third calculation formula. Second, obtain the equivalent inductance and equivalent capacitance of the resonant circuit. Then, calculate the equivalent capacitive reactance value of the target circuit based on a preset fourth calculation formula and the equivalent inductance, equivalent capacitance, load impedance, angular velocity, and switching impedance. The equivalent impedance value can be the sum of the impedance values ​​of all components included in the target circuit.

[0051] Used to calculate impedance value R eq The third calculation formula can be formula (4):

[0052]

[0053] Among them, R bus X can be the equivalent impedance value. j_eq The capacitor C of the primary-side switching transistor can be used. j The equivalent impedance.

[0054] The equivalent capacitance value can be the sum of the equivalent capacitance and equivalent inductance values ​​in the target circuit. The fourth formula for calculating the equivalent capacitance value can be formula (5):

[0055]

[0056] Furthermore, a feasible method for calculating the theoretical conduction time is to calculate the conduction angle of the equivalent impedance based on the preset fifth calculation formula, phase lag angle, and angular velocity, and then calculate the theoretical conduction time of the target circuit based on the preset second calculation formula, angular velocity, and conduction angle.

[0057] The theoretical conduction time can be calculated based on the obtained circuit parameters. It should be noted that the theoretical conduction time is not the optimal conduction time, but only the conduction time obtained through calculation.

[0058] Used to calculate the theoretical conduction time T SR_Cal The second calculation formula can be formula (6):

[0059]

[0060] Among them, T S β can be the period of the target circuit, and β can be the conduction angle of the target circuit.

[0061] It should be noted that the period duration can be the conduction period of the resonant circuit, which is calculated based on the period calculation formula and the resonant frequency. The preset period calculation formula can be formula (7); the conduction angle can be the angle that makes the target circuit meet the maximum gain. The preset fifth calculation formula for calculating the conduction angle can be formula (8):

[0062]

[0063] β=ω-α Formula (8)

[0064] It is understandable that a charging feedback phenomenon occurs when the resonant circuit converter is operating in reverse, which leads to a decrease in the reverse gain of the resonant circuit converter. Therefore, the maximum gain can be set so that the resonant circuit converter can output the energy of the power supply to the load circuit as much as possible.

[0065] Furthermore, in order to ensure that the secondary-side switches of the resonant circuit converter can operate at a high gain, a feasible method is to have each secondary-side switch operate at the resonant frequency of the target circuit, and the duty cycle of each secondary-side switch is 50%.

[0066] S102, obtain the load voltage of the load circuit, the power supply voltage in the power supply circuit, the transformation ratio in the target circuit, and the actual conduction time of the target circuit;

[0067] In one embodiment, the load voltage can be the voltage detected in the load circuit connected to the target circuit.

[0068] The power supply voltage can be the voltage at which the power supply circuit outputs power from the energy storage battery to the target circuit.

[0069] The transformer ratio can be the ratio of the coils of the transformer in the target circuit, for example, it can be 5:4.

[0070] The actual conduction time can be the conduction time of the primary-side switch controlled by the target circuit at the current moment. It should be noted that the scenario illustrated in this specification involves the resonant circuit converter operating in reverse; therefore, the primary-side switch is the switch connected to the load circuit, for example, it could be... Figure 4 The primary-side switching transistors (Q1, Q2, Q3, Q4) in the circuit.

[0071] S103, when the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain a first conduction time, and the target conduction time is determined based on a first comparison result obtained by comparing the first conduction time with the theoretical conduction time;

[0072] In one embodiment, the target voltage and the load voltage are compared. When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain a first conduction time. The first conduction time is compared with the theoretical conduction time to obtain a first comparison result. When the first comparison result indicates that the first conduction time is greater than the theoretical conduction time, the first conduction time is determined as the target conduction time. When the first comparison result indicates that the first conduction time is less than or equal to the theoretical conduction time, the theoretical conduction time is determined as the target conduction time.

[0073] The target voltage can be calculated by multiplying the transformer ratio and the supply voltage, such as... Figure 2 n*V sec It can be Figure 2 The target voltage of the target circuit is shown. Here, n can be the transformer's turns ratio, V. sec It can be the power supply voltage.

[0074] The preset unit duration can be a fixed duration, such as 0.1μs.

[0075] The first conduction duration can be the actual conduction duration plus a preset unit duration. For example, if the actual conduction duration is 8.2μs and the unit duration is 0.1μs, then the first conduction duration is (8.2-0.1)=8.1μs.

[0076] S104, when the load voltage is greater than the preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time, and the target conduction time is determined based on the second comparison result obtained by comparing the second conduction time with the half-cycle time. The preset voltage is obtained based on the target voltage and a preset voltage reference value.

[0077] In one embodiment, the load voltage is compared with a preset voltage. When the load voltage is less than the preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time. The second conduction time is compared with a half-cycle time to obtain a second comparison result. When the second comparison result indicates that the second conduction time is greater than the half-cycle time, the half-cycle time is determined as the target conduction time. When the second comparison result indicates that the second conduction time is less than or equal to the half-cycle time, the second conduction time is determined as the target conduction time.

[0078] The second conduction duration can be the actual conduction duration plus a preset unit duration. For example, if the actual conduction duration is 8.2μs and the unit duration is 0.1μs, then the first conduction duration is (8.2+0.1)=8.3μs.

[0079] The preset voltage can be obtained based on the target voltage and a preset voltage reference value, for example, it can be (n*V). sec +x)V, etc. Among them, “n*V” sec "+x" represents the highest voltage value that can be achieved without damaging the target circuit or the load circuit when the duty cycle of the switch controlled by the target circuit is 50%. "x" can be a value obtained from experiments and used as a voltage reference, such as 30. It should be noted that the preset voltage can be set so that when the duty cycle of the switch controlled by the target circuit is 50%, the load circuit is at maximum gain, and the load voltage can be promptly released when switching from reverse to forward operation.

[0080] The half-cycle duration can be half the cycle duration of the target circuit. The cycle duration can be obtained by using the cycle calculation formula in step S101, i.e., formula (7).

[0081] Understandably, since the preset voltage is a pre-set voltage value, it is the highest voltage value that can ensure no damage to the target circuit and the load circuit. It also ensures that the load circuit is at maximum gain when the duty cycle of the switch controlled by the target circuit is 50%, and can release the load voltage of the load circuit in time when changing from reverse operation to forward operation. Therefore, when the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, there is no need to adjust the actual conduction time, and the actual conduction time can be directly determined as the target conduction time.

[0082] Furthermore, such as Figure 5 As shown, Figure 5 This can be a flowchart that compares the load voltage and the actual conduction time to determine the target conduction time. Based on... Figure 5 It can be seen that after obtaining the load voltage and the target voltage (n*V) sec After setting the preset voltage (preset reference value is selected as 30V), actual conduction time, cycle time, and theoretical conduction time, the load voltage is compared with the preset voltage. When the load voltage is greater than the preset voltage, the actual conduction time is increased by a preset unit time (0.1μs) to obtain the second conduction time. The second conduction time is compared with the half-cycle time. When the second conduction time is greater than the half-cycle time, the second conduction time is determined as the target conduction time; when the second conduction time is less than or equal to the half-cycle time, the actual conduction time is determined as the target conduction time. When the load voltage is less than or equal to the preset voltage, the load voltage is compared with the target voltage. When the load voltage is greater than or equal to the target voltage, the actual conduction time is determined as the target conduction time. When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain the first conduction time. The first conduction time is then compared with the theoretical conduction time. When the first conduction time is greater than or equal to the theoretical conduction time, the actual conduction time is determined as the target conduction time. When the first conduction time is less than the theoretical conduction time, the theoretical conduction time is determined as the target conduction time.

[0083] S105, the operating state of the switching transistor in the target circuit is controlled by the target conduction duration;

[0084] In one embodiment, after determining the target conduction duration, the operating state of the primary-side switch in the target circuit is controlled by the target conduction duration.

[0085] For example, a method for controlling the operating state of the primary-side switch in the target circuit using a target on-time can be to control the primary-side switch in the target circuit to switch between an on state and a closed state every target on-time. For instance, if the target on-time is 8.2 μs, then the primary-side switch in the target circuit is controlled to switch from an on state to a closed state, or from a closed state to an on state, every 16.4 μs.

[0086] Understandably, since the target circuit controls all the switches on the primary side, when the on or off duration of each switch on the primary side reaches 8.2μs, all switches will simultaneously switch states. If individual control of each switch is required, it can be configured according to the actual situation.

[0087] In the embodiments of this specification, specific circuit parameters of the target circuit are obtained, and the theoretical conduction time and actual conduction time are obtained based on these circuit parameters. Based on the comparison results of the load voltage and power supply voltage of the target circuit and the comparison results of the theoretical conduction time and actual conduction time, the target conduction time is obtained. Thus, the working state of the switching transistor in the target circuit is controlled based on the conduction time of the target circuit. According to the switching of the switching transistor, the charging feedback phenomenon of the target circuit is suppressed or enhanced, thereby ensuring that the target circuit can still work in a high-gain state during charging and discharging, and improving the working performance of the target circuit.

[0088] Please see Figure 6 This document provides a flowchart illustrating another circuit control method for embodiments of this specification. For example... Figure 6 As shown, the method may include the following steps S201-S216.

[0089] S201, Obtain the resonant frequency of the resonant circuit, and calculate the angular velocity corresponding to the equivalent impedance according to the preset angular velocity calculation formula and the resonant frequency.

[0090] In one embodiment, the resonant frequency of the resonant circuit is obtained, and the angular velocity corresponding to the equivalent impedance is calculated based on the preset angular velocity calculation formula and the resonant frequency.

[0091] The angular velocity can be calculated based on the preset angular velocity calculation formula and the resonant frequency. The angular velocity calculation formula can be formula (1). The specific content of formula (1) can be found in step S101, which will not be elaborated here.

[0092] In formula (1), fr is the resonant frequency. The resonant frequency can be the resonant angular frequency of the resonant circuit, which is calculated based on the frequency calculation formula and the equivalent inductance and equivalent capacitance in the resonant circuit. The frequency calculation formula can be formula (2), and the specific content of formula (2) can be found in step S101, which will not be elaborated here.

[0093] S202, obtain the load impedance of the load circuit and the switching impedance of the switching transistor circuit, and calculate the equivalent impedance value of the target circuit based on the load impedance and the switching impedance according to the preset third calculation formula.

[0094] In one embodiment, in order to obtain the phase lag angle of the equivalent impedance, it is necessary to first obtain the equivalent impedance value of the equivalent impedance. The equivalent impedance value can be calculated based on the load impedance and the switching transistor impedance according to a preset third calculation formula.

[0095] The third calculation formula can be formula (4). For details of formula (4), please refer to step S101. It will not be elaborated here.

[0096] S203, obtain the equivalent inductance and equivalent capacitance of the resonant circuit, and calculate the equivalent capacitance value corresponding to the target circuit according to the preset fourth calculation formula and the equivalent inductance, equivalent capacitance, load impedance, angular velocity, and switching transistor impedance.

[0097] In one embodiment, the equivalent capacitive reactance value can be used to indicate the capacitance and inductance values ​​in the target circuit.

[0098] The equivalent capacitance value can be calculated according to the preset fourth calculation formula. The fourth calculation formula can be formula (5). The specific content of formula (5) can be referred to step S101, which will not be elaborated here.

[0099] S204, calculate the phase lag angle of the equivalent impedance according to the preset first calculation formula, the equivalent impedance value, and the equivalent capacitive reactance value;

[0100] In one embodiment, the first calculation formula can be formula (3). The specific content of formula (3) can be found in step S101, and will not be elaborated here.

[0101] Furthermore, in order to ensure that the secondary-side switches of the resonant circuit converter can operate at a high gain, a feasible method is to have each secondary-side switch operate at the resonant frequency of the target circuit, and the duty cycle of each secondary-side switch is 50%.

[0102] S205, calculate the conduction angle of the equivalent impedance according to the preset fifth calculation formula, the phase lag angle, and the angular velocity;

[0103] In one embodiment, the conduction angle can be used to ensure that the resonant circuit meets the maximum gain. The conduction angle can be calculated based on the fifth calculation formula, the phase lag angle, and the angular velocity.

[0104] The conduction angle can be obtained by calculation according to the fifth calculation formula, which can be formula (8). The specific content of formula (8) can be found in step S101, and will not be elaborated here.

[0105] It is understandable that a charging feedback phenomenon occurs when the resonant circuit is operating in reverse, which leads to a decrease in the reverse gain of the resonant circuit converter. Therefore, the maximum gain can be set so that the resonant circuit converter can output the energy of the power supply to the load circuit as much as possible.

[0106] S206, calculate the theoretical conduction time of the target circuit according to the preset second calculation formula, the angular velocity, and the conduction angle;

[0107] In one embodiment, the second calculation formula can be formula (6). The specific content of formula (6) can be found in step S101, and will not be elaborated here.

[0108] The theoretical conduction time can be calculated based on the obtained circuit parameters. It should be noted that the theoretical conduction time is not the optimal conduction time, but only the time obtained through calculation.

[0109] Among them, T is included in formula (6). S The period of the target circuit can be obtained by calculating the period using the period calculation formula. The period calculation formula can be formula (7). For details of formula (7), please refer to step S101. It will not be elaborated here.

[0110] S207, obtain the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformation ratio in the target circuit, and the actual conduction time of the target circuit;

[0111] In one embodiment, the load voltage can be the voltage detected in the load circuit connected to the target circuit.

[0112] The power supply voltage can be the voltage at which the power supply circuit outputs power from the energy storage battery to the target circuit.

[0113] The transformer ratio can be the ratio of the coils of the transformer in the target circuit, for example, it can be 5:4.

[0114] The actual conduction time can be the conduction time of the primary-side switch controlled by the target circuit at the current moment. It should be noted that the scenario illustrated in this specification involves the resonant circuit converter operating in reverse; therefore, the primary-side switch is the switch connected to the load circuit, for example, it could be... Figure 4 The primary-side switching transistors (Q1, Q2, Q3, Q4) in the circuit.

[0115] S208, compare the load voltage with the target voltage. When the load voltage is less than the target voltage, reduce the actual conduction time by a preset unit time to obtain the first conduction time.

[0116] In one embodiment, the target voltage can be a voltage calculated by multiplying the transformer ratio and the power supply voltage.

[0117] For example, such as Figure 2 n*V sec It can be Figure 2 The target voltage of the target circuit is shown. Here, n can be the transformer's turns ratio, C... sec It can be the power supply voltage, for example, n is 5:4, power supply voltage V sec If the voltage is 200V, then the target voltage is 250V.

[0118] The preset unit duration can be a fixed duration, such as 0.1μs.

[0119] The first conduction duration can be the actual conduction duration plus a preset unit duration. For example, if the actual conduction duration is 8.2μs and the unit duration is 0.1μs, then the first conduction duration is (8.2-0.1)=8.1μs.

[0120] S209, compare the first conduction duration with the theoretical conduction duration to obtain a first comparison result;

[0121] In one embodiment, the first comparison result can include two cases: the first conduction duration is greater than the theoretical conduction duration and the first conduction duration is less than or equal to the theoretical conduction duration.

[0122] Understandably, since the load voltage is less than the target voltage, in order to ensure that the gain of the resonant circuit is kept at its maximum, it is necessary to increase the charging feedback phenomenon. Therefore, in order to increase the charging feedback phenomenon, the first conduction time is compared with the theoretical conduction time, so that a longer conduction time can be selected as the target conduction time based on the comparison result.

[0123] S210, when the first comparison result indicates that the first conduction duration is greater than the theoretical conduction duration, the first conduction duration is determined as the target conduction duration;

[0124] In one embodiment, the method for determining the target conduction duration from the first conduction duration can be as follows: if the first conduction duration is 8.3 μs and the actual conduction duration is 8.25 μs, then the actual conduction duration of 8.25 μs is adjusted to half-cycle duration of 8.3 μs to obtain the target conduction duration of 8.3 μs.

[0125] S211, when the first comparison result indicates that the first conduction duration is less than or equal to the theoretical conduction duration, the theoretical conduction duration is determined as the target conduction duration;

[0126] In one embodiment, the method for determining the target conduction duration from the theoretical conduction duration can be as follows: if the first conduction duration is 8.2 μs and the theoretical conduction duration is 8.25 μs, then the first conduction duration of 8.2 μs is adjusted to the theoretical conduction duration of 8.25 μs to obtain the target conduction duration of 8.25 μs.

[0127] S212, compare the load voltage with the preset voltage. When the load voltage is less than the preset voltage, increase the actual conduction time by a preset unit time to obtain a second conduction time.

[0128] In one embodiment, the second conduction duration can be the duration obtained by adding a preset unit duration to the actual conduction duration. For example, if the actual conduction duration is 8.2 μs and the unit duration is 0.1 μs, then the first conduction duration is (8.2 + 0.1) = 8.3 μs.

[0129] The preset voltage can be obtained based on the target voltage and a preset voltage reference value, for example, it can be (n*V). sec +x)V, etc. Among them, “n*V” sec "+x" represents the highest voltage value that can be achieved without damaging the target circuit or the load circuit when the duty cycle of the switch controlled by the target circuit is 50%. "x" can be a value obtained from experiments and used as a voltage reference, such as 30. It should be noted that the preset voltage can be set so that when the duty cycle of the switch controlled by the target circuit is 50%, the load circuit is at maximum gain, and the load voltage can be promptly released when switching from reverse to forward operation.

[0130] Understandably, since the preset voltage is a pre-set voltage value, it is the highest voltage value that can ensure no damage to the target circuit and the load circuit. It also ensures that the load circuit is at maximum gain when the duty cycle of the switch controlled by the target circuit is 50%, and can release the load voltage of the load circuit in time when changing from reverse operation to forward operation. Therefore, when the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, there is no need to adjust the actual conduction time, and the actual conduction time can be directly determined as the target conduction time.

[0131] S213, compare the second conduction duration with the half-cycle duration to obtain a second comparison result;

[0132] In one embodiment, the half-cycle duration can be half the cycle duration of the target circuit. The cycle duration can be obtained by using the cycle calculation formula in step S101, i.e., formula (7).

[0133] The second comparison result can include two cases: the second conduction duration is greater than half a cycle duration and the first conduction duration is less than or equal to half a cycle duration.

[0134] Understandably, since the load voltage is greater than the preset voltage, in order to ensure that the gain of the resonant circuit is kept at its maximum, it is necessary to reduce the charging feedback phenomenon. Therefore, in order to reduce the charging feedback phenomenon, the second conduction duration is compared with the half-cycle duration, so that the shorter conduction duration can be selected as the target conduction duration based on the comparison result.

[0135] S214, when the second comparison result indicates that the second conduction duration is greater than the half-cycle duration, the half-cycle duration is determined as the target conduction duration;

[0136] In one embodiment, the method for determining the target conduction duration by the half-cycle duration can be as follows: if the second conduction duration is 8.3 μs and the half-cycle duration is 8.25 μs, then the second conduction duration of 8.3 μs is adjusted to the half-cycle duration of 8.25 μs to obtain the target conduction duration of 8.25 μs.

[0137] S215, when the second comparison result indicates that the second conduction duration is less than or equal to the half-cycle duration, the second conduction duration is determined as the target conduction duration;

[0138] In one embodiment, when the target circuit releases the voltage of the connected load circuit through a switching transistor, if the duty cycle of the switching transistor is too large, the energy cannot be released in time when the target circuit switches from reverse operation to forward operation, leading to circuit damage. Therefore, it is necessary to limit the maximum and minimum values ​​of the target conduction time, and then use a preset voltage and a target voltage as the maximum and minimum values ​​respectively to compare and judge the actual conduction time.

[0139] Furthermore, such as Figure 5 As shown, Figure 5 This can be a flowchart that compares the load voltage and the actual conduction time to determine the target conduction time. Based on... Figure 5 It can be seen that after obtaining the load voltage and the target voltage (n*C) secAfter setting the preset voltage (preset reference value is selected as 30V), actual conduction time, cycle time, and theoretical conduction time, the load voltage is compared with the preset voltage. When the load voltage is greater than the preset voltage, the actual conduction time is increased by a preset unit time (0.1μs) to obtain the second conduction time. The second conduction time is compared with the half-cycle time. When the second conduction time is greater than the half-cycle time, the second conduction time is determined as the target conduction time; when the second conduction time is less than or equal to the half-cycle time, the actual conduction time is determined as the target conduction time. When the load voltage is less than or equal to the preset voltage, the load voltage is compared with the target voltage. When the load voltage is greater than or equal to the target voltage, the actual conduction time is determined as the target conduction time. When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain the first conduction time. The first conduction time is then compared with the theoretical conduction time. When the first conduction time is greater than or equal to the theoretical conduction time, the actual conduction time is determined as the target conduction time. When the first conduction time is less than the theoretical conduction time, the theoretical conduction time is determined as the target conduction time.

[0140] S216, the operating state of the switching transistor in the target circuit is controlled by the target conduction duration;

[0141] In one embodiment, a feasible method for controlling the operating state of the primary-side switch in the target circuit using a target on-time can be to control the primary-side switch in the target circuit to switch between on and off states every target on-time.

[0142] For example, if the target conduction duration is 8.2μs, the primary-side switch of the target circuit switches from the conduction state to the closed state, or from the closed state to the conduction state, every 16.4μs.

[0143] Understandably, since the target circuit controls all the switches on the primary side, when the on or off duration of each switch on the primary side reaches 8.2μs, all switches will simultaneously switch states. If individual control of each switch is required, it can be configured according to the actual situation.

[0144] In the embodiments of this specification, specific circuit parameters of the target circuit are obtained, and the theoretical conduction time and actual conduction time are obtained based on these circuit parameters. Based on the comparison results of the load voltage and power supply voltage of the target circuit and the comparison results of the theoretical conduction time and actual conduction time, the target conduction time of the target circuit is obtained. Thus, based on the conduction time of the target circuit, the working state of the switching transistor in the target circuit is controlled to switch between conduction and closure, thereby enhancing or suppressing the charging feedback phenomenon of the target circuit, ensuring that the target circuit can still operate in a high-gain state during charging and discharging, and improving the working performance of the target circuit.

[0145] based on Figure 1 The system architecture shown below will be combined with... Figure 7 and Figure 8 This specification provides a detailed description of the circuit control device provided in the embodiments. It should be noted that... Figure 7 and Figure 8 The circuit control device in this specification is used to execute the circuit control device in this specification. Figures 2-6 The control method described in the illustrated embodiments is only shown for ease of explanation, focusing on the parts relevant to the embodiments in this specification. For specific technical details not disclosed, please refer to this specification. Figures 2-6 Description of the illustrated embodiment.

[0146] Please see Figure 7 This document provides a schematic diagram of the structure of a circuit control device as an embodiment of the present specification. Figure 7 As shown, the circuit control device 1 described in the embodiments of this specification may include: a theoretical duration acquisition unit 11, an actual duration acquisition unit 12, a target duration comparison unit 13, and a switching circuit control unit 14.

[0147] The theoretical duration acquisition unit 11 is used to acquire the phase lag angle of the equivalent impedance of the resonant circuit and the resonant frequency of the resonant circuit, and based on the phase lag angle and the resonant frequency, obtain the theoretical conduction duration corresponding to the target circuit.

[0148] The actual duration acquisition unit 12 is used to acquire the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformer ratio in the target circuit, and the actual conduction duration of the target circuit.

[0149] The target duration acquisition unit 13 is used to, when the load voltage is less than the target voltage, reduce the actual conduction duration by a preset unit duration to obtain a first conduction duration, and determine the target conduction duration by comparing the first conduction duration with the theoretical conduction duration to obtain a first comparison result. The target voltage is obtained by multiplying the power supply voltage and the transformer ratio.

[0150] The target duration acquisition unit 13 is further configured to, when the load voltage is greater than the preset voltage, add the actual conduction duration to the preset unit duration to obtain a second conduction duration, and determine the target conduction duration by comparing the second conduction duration with the half-cycle duration to obtain a second comparison result. The preset voltage is obtained by adding the target voltage and the preset voltage reference value. The cycle duration is the conduction period of the resonant circuit, which is calculated according to the preset cycle calculation formula and the resonant frequency. The half-cycle duration is half of the cycle duration.

[0151] The switching circuit control unit 14 is used to adjust the actual conduction duration based on the duration comparison result to obtain a target conduction duration, and to use the target conduction duration to control the working state of the switching transistor in the target circuit.

[0152] Optional, such as Figure 8 As shown, the theoretical duration acquisition unit 11 includes:

[0153] The angular velocity acquisition subunit 111 is used to acquire the resonant frequency of the target circuit, and calculate the angular velocity corresponding to the equivalent impedance according to the preset angular velocity calculation formula and the resonant frequency.

[0154] The equivalent parameter acquisition subunit 112 is used to acquire the equivalent impedance value and equivalent capacitive reactance value of the target circuit.

[0155] Phase lag angle acquisition subunit 113 is used to calculate the phase lag angle of the equivalent impedance according to the preset first calculation formula and the equivalent impedance value and the equivalent capacitive reactance value.

[0156] The theoretical duration acquisition subunit 114 is used to calculate the theoretical conduction duration of the resonant circuit based on the preset second calculation formula, the phase lag angle, and the angular velocity.

[0157] Optionally, the equivalent parameter acquisition subunit 112 is further configured to:

[0158] The load impedance of the load circuit and the switching impedance of the switching transistor circuit are obtained. Based on the load impedance and the switching impedance, a calculation is performed according to a preset third calculation formula to obtain the equivalent impedance value of the target circuit.

[0159] The equivalent inductance and equivalent capacitance of the resonant circuit are obtained. Based on the preset fourth calculation formula and the equivalent inductance, equivalent capacitance, load impedance, angular velocity, and switching transistor impedance, the equivalent capacitance value corresponding to the target circuit is calculated. The equivalent capacitance value indicates the capacitance and inductance values ​​in the target circuit.

[0160] Optionally, the theoretical duration acquisition subunit 114 is further used for:

[0161] The conduction angle of the equivalent impedance is obtained by calculating according to the preset fifth calculation formula, the phase lag angle, and the angular velocity.

[0162] The theoretical conduction time of the target circuit is obtained by calculating based on the preset second calculation formula, the angular velocity, and the conduction angle.

[0163] Optionally, the target duration acquisition unit 13 is further configured to:

[0164] The load voltage is compared with the target voltage. When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain the first conduction time.

[0165] The first conduction duration is compared with the theoretical conduction duration to obtain the first comparison result;

[0166] When the first comparison result indicates that the first conduction duration is greater than the theoretical conduction duration, the first conduction duration is determined as the target conduction duration;

[0167] When the first comparison result indicates that the first conduction duration is less than or equal to the theoretical conduction duration, the theoretical conduction duration is determined as the target conduction duration.

[0168] Optionally, the target duration acquisition unit 13 is further configured to:

[0169] The load voltage is compared with a preset voltage. When the load voltage is less than the preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time.

[0170] The second conduction duration is compared with the half-cycle duration to obtain a second comparison result;

[0171] When the second comparison result indicates that the second conduction duration is greater than the half-cycle duration, the half-cycle duration is determined as the target conduction duration;

[0172] When the second comparison result indicates that the second conduction duration is less than or equal to the half-cycle duration, the second conduction duration is determined as the target conduction duration.

[0173] Optionally, the target duration acquisition unit 13 is further configured to:

[0174] When the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, the actual conduction time is determined as the target conduction time.

[0175] In the embodiments of this specification, specific circuit parameters of the target circuit are obtained, and the theoretical conduction time and actual conduction time are obtained based on these circuit parameters. Based on the comparison results of the load voltage and power supply voltage of the target circuit and the comparison results of the theoretical conduction time and actual conduction time, the target conduction time of the target circuit is obtained. Thus, based on the conduction time of the target circuit, the working state of the switching transistor in the target circuit is controlled to switch between conduction and closure, thereby enhancing or suppressing the charging feedback phenomenon of the target circuit, ensuring that the target circuit can still operate in a high-gain state during charging and discharging, and improving the working performance of the target circuit.

[0176] This specification also provides a computer storage medium that can store multiple program instructions adapted to be loaded and executed by a processor as described above. Figures 1-6 The method steps of the illustrated embodiment can be found in the following documentation for detailed execution. Figures 1-6 The specific details of the illustrated embodiments will not be elaborated here.

[0177] Please see Figure 9 This document provides a schematic diagram of the structure of an electronic device as an embodiment of the present specification. Figure 9 As shown, the electronic device 1000 may include: at least one processor 1001, such as a CPU, at least one communication bus 1002, and at least one memory 1003. The communication bus 1002 is used to implement communication between these components. The memory 1003 may be high-speed RAM or non-volatile memory, such as at least one disk storage device. Optionally, the memory 1003 may also be at least one storage device located remotely from the aforementioned processor 1001. Figure 9 As shown, the memory 1003, which serves as a computer storage medium, may include circuit control applications.

[0178] In one embodiment, the processor 1001 can be used to invoke a circuit control application stored in the memory 1003 and specifically perform the following operations:

[0179] Obtain the phase lag angle of the equivalent impedance of the target circuit and the resonant frequency of the resonant circuit. Based on the phase lag angle and the resonant frequency, obtain the theoretical conduction time of the target circuit.

[0180] Obtain the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformer ratio in the target circuit, and the actual conduction time of the target circuit;

[0181] When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain a first conduction time. The target conduction time is determined based on a first comparison result obtained by comparing the first conduction time with the theoretical conduction time. The target voltage is obtained based on the power supply voltage and the transformer ratio.

[0182] When the load voltage is greater than the preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time. The target conduction time is determined based on the second comparison result obtained by comparing the second conduction time with the half-cycle time. The preset voltage is obtained based on the target voltage and a preset voltage reference value. The cycle time is the conduction period of the resonant circuit, which is calculated according to the preset cycle calculation formula and the resonant frequency. The half-cycle time is half of the cycle time.

[0183] The operating state of the switching transistor in the target circuit is controlled by the target conduction duration.

[0184] Optionally, when the processor 1001 performs the following operations to obtain the phase lag angle of the equivalent impedance and the resonant frequency of the resonant circuit, and based on the phase lag angle and the resonant frequency, obtains the theoretical conduction time corresponding to the target circuit:

[0185] Obtain the resonant frequency of the resonant circuit, and calculate the angular velocity corresponding to the equivalent impedance based on the preset angular velocity calculation formula and the resonant frequency.

[0186] Obtain the equivalent impedance value and equivalent capacitive reactance value of the target circuit;

[0187] The phase lag angle of the equivalent impedance is obtained by calculating based on the preset first calculation formula, the equivalent impedance value, and the equivalent capacitive reactance value.

[0188] The theoretical conduction time of the resonant circuit is obtained by calculating based on the preset second calculation formula, the phase lag angle, and the angular velocity.

[0189] Optionally, when the processor 1001 obtains the equivalent impedance value and equivalent capacitive reactance value of the target circuit, it specifically performs the following operations:

[0190] The load impedance of the load circuit and the switching impedance of the switching transistor circuit are obtained. Based on the load impedance and the switching impedance, a calculation is performed according to a preset third calculation formula to obtain the equivalent impedance value of the target circuit.

[0191] The equivalent inductance and equivalent capacitance of the resonant circuit are obtained. Based on the preset fourth calculation formula and the equivalent inductance, equivalent capacitance, load impedance, angular velocity, and switching transistor impedance, the equivalent capacitance value corresponding to the target circuit is calculated. The equivalent capacitance value indicates the capacitance and inductance values ​​in the target circuit.

[0192] Optionally, when the processor 1001 performs calculations based on a preset second calculation formula, the phase lag angle, and the resonant frequency to obtain the theoretical conduction time corresponding to the target circuit, it specifically performs the following operations:

[0193] The conduction angle of the equivalent impedance is obtained by calculating according to the preset fifth calculation formula, the phase lag angle, and the angular velocity.

[0194] The theoretical conduction time of the target circuit is obtained by calculating based on the preset second calculation formula, the angular velocity, and the conduction angle.

[0195] Optionally, when the processor 1001 executes the following steps: when the load voltage is less than the target voltage, the processor reduces the actual conduction time by a preset unit time to obtain a first conduction time, and determines the target conduction time based on a first comparison result obtained by comparing the first conduction time with the theoretical conduction time:

[0196] The load voltage is compared with the target voltage. When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain the first conduction time.

[0197] The first conduction duration is compared with the theoretical conduction duration to obtain the first comparison result;

[0198] When the first comparison result indicates that the first conduction duration is greater than the theoretical conduction duration, the first conduction duration is determined as the target conduction duration;

[0199] When the first comparison result indicates that the first conduction duration is less than or equal to the theoretical conduction duration, the theoretical conduction duration is determined as the target conduction duration.

[0200] Optionally, when the processor 1001 executes the following steps: when the load voltage is greater than a preset voltage, it increases the actual conduction time by a preset unit time to obtain a second conduction time, and determines the target conduction time based on a second comparison result obtained by comparing the second conduction time with the period duration:

[0201] The load voltage is compared with a preset voltage. When the load voltage is less than the preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time.

[0202] The second conduction duration is compared with the half-cycle duration to obtain a second comparison result;

[0203] When the second comparison result indicates that the second conduction duration is greater than the half-cycle duration, the half-cycle duration is determined as the target conduction duration;

[0204] When the second comparison result indicates that the second conduction duration is less than or equal to the half-cycle duration, the second conduction duration is determined as the target conduction duration.

[0205] Optionally, the processor 1001 also performs the following operations:

[0206] When the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, the actual conduction time is determined as the target conduction time.

[0207] In the embodiments of this specification, specific circuit parameters of the target circuit are obtained, and the theoretical conduction time and actual conduction time are obtained based on these circuit parameters. Based on the comparison results of the load voltage and power supply voltage of the target circuit and the comparison results of the theoretical conduction time and actual conduction time, the target conduction time of the target circuit is obtained. Thus, based on the conduction time of the target circuit, the working state of the switching transistor in the target circuit is controlled to switch between conduction and closure, thereby enhancing or suppressing the charging feedback phenomenon of the target circuit, ensuring that the target circuit can still operate in a high-gain state during charging and discharging, and improving the working performance of the target circuit.

[0208] Those skilled in the art will understand that all or part of the processes in the above embodiments can be implemented by a computer program instructing related hardware. The program can be stored in a computer-readable storage medium, and when executed, it can include the processes of the embodiments of the above methods. The storage medium can be a magnetic disk, optical disk, read-only memory (ROM), or random access memory (RAM), etc.

[0209] The above-disclosed embodiments are merely preferred embodiments of this specification and should not be construed as limiting the scope of this specification. Therefore, any equivalent variations made in accordance with the claims of this specification shall still fall within the scope of this specification.

Claims

1. A circuit control method, characterized in that, The method is applied to a control circuit, which includes a target circuit and a power supply circuit. The target circuit includes a load circuit and a resonant circuit. The target circuit is obtained by equivalent transformation of the original circuit. The resonant circuit includes a transformer. The target circuit is connected to the power supply circuit. The method includes: Obtain the phase lag angle of the equivalent impedance of the target circuit and the resonant frequency of the resonant circuit. Obtain the angular velocity based on the resonant frequency. Obtain the conduction angle based on the phase lag angle and the angular velocity. Obtain the theoretical conduction time of the target circuit based on the conduction angle and the angular velocity. Obtain the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformer ratio in the target circuit, and the actual conduction time of the target circuit; When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain a first conduction time. The target conduction time is determined based on a first comparison result obtained by comparing the first conduction time with the theoretical conduction time. The target voltage is obtained based on the power supply voltage and the transformer ratio. The target conduction time is determined based on the numerical value between the first conduction time and the theoretical conduction time. When the load voltage is greater than the preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time. The target conduction time is determined based on a second comparison result obtained by comparing the second conduction time with the half-cycle time. The preset voltage is obtained based on the target voltage and a preset voltage reference value. The cycle time is the conduction period of the resonant circuit, which is calculated according to a preset cycle calculation formula and the resonant frequency. The half-cycle time is half of the cycle time. The target conduction time is determined based on the numerical value between the second conduction time and the half-cycle time. The operating state of the switching transistor in the target circuit is controlled by the target conduction duration.

2. The method according to claim 1, characterized in that, The process of obtaining the phase lag angle of the equivalent impedance of the target circuit and the resonant frequency of the resonant circuit, obtaining the angular velocity based on the resonant frequency, obtaining the conduction angle based on the phase lag angle and the angular velocity, and obtaining the theoretical conduction time of the target circuit based on the conduction angle and the angular velocity includes: Obtain the resonant frequency of the resonant circuit, and calculate the angular velocity corresponding to the equivalent impedance based on the preset angular velocity calculation formula and the resonant frequency. Obtain the equivalent impedance value and equivalent capacitive reactance value of the target circuit; The phase lag angle of the equivalent impedance is obtained by calculating based on the preset first calculation formula, the equivalent impedance value, and the equivalent capacitive reactance value. According to the preset second calculation formula, the conduction angle is obtained based on the phase lag angle and the angular velocity, and the theoretical conduction time corresponding to the target circuit is obtained based on the conduction angle and the angular velocity.

3. The method according to claim 2, characterized in that, The resonant circuit also includes a switching transistor circuit, which includes at least one switching transistor. The process of obtaining the equivalent impedance value and equivalent capacitive reactance value of the target circuit includes: The load impedance of the load circuit and the switching impedance of the switching transistor circuit are obtained. Based on the load impedance and the switching impedance, a calculation is performed according to a preset third calculation formula to obtain the equivalent impedance value of the target circuit. The equivalent inductance and equivalent capacitance of the resonant circuit are obtained. Based on the preset fourth calculation formula and the equivalent inductance, equivalent capacitance, load impedance, angular velocity, and switching transistor impedance, the equivalent capacitance value corresponding to the target circuit is calculated. The equivalent capacitance value indicates the capacitance and inductance values ​​in the target circuit.

4. The method according to claim 2, characterized in that, The step of obtaining the conduction angle based on the phase lag angle and the angular velocity according to the preset second calculation formula, and obtaining the theoretical conduction time corresponding to the target circuit based on the conduction angle and the angular velocity, includes: The conduction angle of the equivalent impedance is obtained by calculating according to the preset fifth calculation formula, the phase lag angle, and the angular velocity. The theoretical conduction time of the target circuit is obtained by calculating based on the preset second calculation formula, the angular velocity, and the conduction angle.

5. The method according to claim 1, characterized in that, When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain a first conduction time. The target conduction time is determined based on a first comparison result obtained by comparing the first conduction time with the theoretical conduction time, including: The load voltage is compared with the target voltage. When the load voltage is less than the target voltage, the actual conduction time is reduced by a preset unit time to obtain the first conduction time. The first conduction duration is compared with the theoretical conduction duration to obtain the first comparison result; When the first comparison result indicates that the first conduction duration is greater than the theoretical conduction duration, the first conduction duration is determined as the target conduction duration; When the first comparison result indicates that the first conduction duration is less than or equal to the theoretical conduction duration, the theoretical conduction duration is determined as the target conduction duration.

6. The method according to claim 1, characterized in that, When the load voltage is greater than a preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time. The target conduction time is determined based on a second comparison result obtained by comparing the second conduction time with the period duration, including: The load voltage is compared with a preset voltage. When the load voltage is less than the preset voltage, the actual conduction time is increased by a preset unit time to obtain a second conduction time. The second conduction duration is compared with the half-cycle duration to obtain a second comparison result; When the second comparison result indicates that the second conduction duration is greater than the half-cycle duration, the half-cycle duration is determined as the target conduction duration; When the second comparison result indicates that the second conduction duration is less than or equal to the half-cycle duration, the second conduction duration is determined as the target conduction duration.

7. The method according to claim 1, characterized in that, The method further includes: When the load voltage is greater than or equal to the target voltage and less than or equal to the preset voltage, the actual conduction time is determined as the target conduction time.

8. A circuit control device, characterized in that, The device includes: The theoretical conduction duration acquisition unit is used to acquire the phase lag angle of the equivalent impedance of the target circuit and the resonant frequency of the resonant circuit, obtain the angular velocity based on the resonant frequency, obtain the conduction angle based on the phase lag angle and the angular velocity, and obtain the theoretical conduction duration corresponding to the target circuit based on the conduction angle and the angular velocity. The actual duration acquisition unit is used to acquire the load voltage of the load circuit, the power supply voltage of the power supply circuit, the transformer ratio in the target circuit, and the actual conduction duration of the target circuit. The target conduction duration acquisition unit is used to, when the load voltage is less than the target voltage, reduce the actual conduction duration by a preset unit duration to obtain a first conduction duration, and determine the target conduction duration by comparing the first conduction duration with the theoretical conduction duration to obtain a first comparison result. The target voltage is obtained by multiplying the power supply voltage and the transformer ratio, and the target conduction duration is determined based on the numerical value between the first conduction duration and the theoretical conduction duration. The target conduction duration acquisition unit is further configured to, when the load voltage is greater than the preset voltage, add a preset unit duration to the actual conduction duration to obtain a second conduction duration, and determine the target conduction duration by comparing the second conduction duration with the half-cycle duration to obtain a second comparison result. The preset voltage is obtained by adding the target voltage and the preset voltage reference value. The cycle duration is the conduction period of the resonant circuit, which is calculated according to the cycle calculation formula and the resonant frequency. The half-cycle duration is half of the cycle duration. The target conduction duration is determined based on the numerical value between the second conduction duration and the half-cycle duration. A switching circuit control unit is used to control the operating state of the switching transistor in the target circuit using the target on-time.

9. A computer storage medium storing a plurality of instructions adapted for loading by a processor and executing the steps of the method as claimed in any one of claims 1 to 7.

10. An electronic device, comprising: A processor and a memory; wherein the memory stores a computer program adapted to be loaded by the processor and to execute the steps of the method as claimed in any one of claims 1 to 7.

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