Radio frequency power amplifier module, manufacturing method, antenna transceiver module and base station

Abstract

The embodiment of the invention provides a radio frequency power amplifier module, a manufacturing method, an antenna transceiver module and a base station, and relates to the technical field of communication equipment. The radio frequency power amplifier module comprises a first substrate; the power amplification component and the isolation component are arranged on the first substrate; the power amplification component is electrically connected with the isolation component through the first substrate; wherein the isolation part comprises a ferrite element and a first area of the first substrate, and the ferrite element is arranged in the first area of the first substrate. According to the embodiment of the invention, the cost of the radio frequency power amplifier module can be effectively reduced, the insertion loss between the power amplification component and the isolation component is reduced while the area of the radio frequency power amplifier module is reduced, and the emission efficiency of the emission path is improved.

Description

Technical Field

[0001] The present application relates to the technical field of communication equipment, and in particular to a radio frequency power amplifier module, a manufacturing method, an antenna transceiver module and a base station. Background Art

[0002] With the development of mobile communication technology, a massive multiple-input multiple-output (Massive MIMO) system is usually used to ensure the coverage capability of base stations. Therefore, a large number of RF power amplifier modules need to be set in the Massive MIMO system, but the existing RF power amplifier modules cannot meet the requirements of miniaturization and low cost. Summary of the invention

[0003] The embodiments of the present application provide a radio frequency power amplifier module, a manufacturing method, an antenna transceiver module and a base station, which can reduce the area of ​​the radio frequency power amplifier module while saving costs and improving the transmission efficiency of the transmission path.

[0004] To achieve the above objectives, the embodiments of the present application adopt the following technical solutions:

[0005] In a first aspect, a radio frequency power amplifier module is provided. The radio frequency power amplifier module comprises: a first substrate; a power amplification component and an isolation component disposed on the first substrate; the power amplification component is electrically connected to the isolation component through the first substrate; wherein the isolation component comprises a ferrite element and a first region of the first substrate, and the ferrite element is disposed in the first region of the first substrate.

[0006] In the implementation method of the present application, the RF power amplifier module directly sets the ferrite element in the isolation component in the first area of ​​the first substrate. A first connecting circuit can be set in the first area of ​​the first substrate, and is electrically connected to the rest of the isolation component through the first connecting circuit, for example, connected to the ferrite element through the first connecting circuit, that is, the first substrate replaces the supporting substrate set when the isolation component is a discrete device, which can effectively reduce the cost of the RF power amplifier module. At the same time, there is no need to consider the packaging avoidance problem of the isolation component, so that the routing distance between the isolation component and the power amplification component can be shortened. While reducing the area of ​​the RF power amplifier module, the insertion loss between the power amplification component and the isolation component is reduced, thereby improving the transmission efficiency of the transmission path.

[0007] In some possible implementations, the power amplification component includes a power amplification chip and a second region of the first substrate, and the power amplification chip is disposed in the second region of the first substrate.

[0008] In this implementation, the power amplification component includes a power amplification chip and a second area of ​​the first substrate. The power amplification chip is arranged in the second area of ​​the first substrate. A second connection circuit can be arranged in the second area of ​​the first substrate, and the power amplification component is electrically connected to the isolation component through the second connection circuit. That is, the first substrate replaces the packaging substrate set when the power amplification component is a discrete device. This can effectively reduce the cost of the RF power amplifier module. At the same time, the power amplification component and the isolation component can be integrated on the first substrate without considering the packaging avoidance problem of the power amplification component and the isolation component, thereby further shortening the routing distance between the isolation component and the power amplification component. While reducing the area of ​​the RF power amplifier module, the insertion loss between the power amplification component and the isolation component is reduced, thereby improving the transmission efficiency of the transmission path.

[0009] In some possible implementations, the isolation component further includes a dielectric unit, which is a ring-shaped structure and is nested around the ferrite element. The dielectric unit can optimize the magnetic circuit.

[0010] In some possible implementations, the isolation component also includes a magnetic element, which is arranged on one side of the ferrite element, and the projection of the magnetic element on the first substrate at least partially overlaps with the projection of the ferrite element on the first substrate, and the magnetic element is used to provide a magnetic field so that the input radio frequency signal can only flow in a specific direction.

[0011] In some possible implementations, the RF power amplifier module also includes a second substrate, which is located on a side of the first substrate away from the power amplification component. The second substrate is electrically connected to the first substrate, and the performance of the second substrate may be lower than that of the first substrate, thereby reducing the cost of the RF power amplifier module.

[0012] In some possible implementations, the RF power amplifier module further includes a heat dissipation layer, which is located on a side of the first substrate away from the power amplification component to assist the power amplification component in dissipating heat.

[0013] In some possible implementations, the RF power amplifier module further includes a heat dissipation layer, which is located on a side of the power amplification component away from the first substrate to assist the power amplification component in dissipating heat.

[0014] In some possible implementations, the magnetic element is embedded in the second substrate.

[0015] In some possible implementations, the magnetic element is embedded in the heat dissipation layer.

[0016] In some possible implementations, the magnetic element is embedded in the first substrate and disposed on a side of the ferrite element close to the first substrate.

[0017] In some possible implementations, the ferrite element and the power amplification component are disposed on the first substrate and are located on the same side of the first substrate.

[0018] In some possible implementations, the ferrite element is embedded in the first substrate.

[0019] In some possible implementations, the ferrite element is embedded in the first substrate, and a coating layer is disposed on the ferrite element.

[0020] In some possible implementations, the power amplification component also includes an input matching circuit and an output matching circuit; the input matching circuit and the output matching circuit are arranged in the second area of ​​the first substrate, the input end of the power amplification chip is electrically connected to the input matching circuit, and the output end of the power amplification chip is electrically connected to the output matching circuit.

[0021] In some possible implementations, the power amplifier component includes a power amplifier chip, an input matching circuit, an output matching circuit and a packaging substrate, the power amplifier chip, the input matching circuit and the output matching circuit are arranged on the packaging substrate, the input end of the power amplifier chip is electrically connected to the input matching circuit, and the output end of the power amplifier chip is electrically connected to the output matching circuit.

[0022] In a second aspect, a method for manufacturing a radio frequency power amplifier module is provided. The method for manufacturing the radio frequency power amplifier module comprises: forming a first substrate, a power amplifier component and an isolation component respectively; wherein the first substrate comprises a first region; the isolation component comprises a ferrite element, and the ferrite element is arranged in the first region of the first substrate; and electrically connecting the power amplifier component to the first substrate.

[0023] In a third aspect, an antenna transceiver module is provided, which includes a receiving path, a transmitting path and an antenna, wherein the transmitting path is electrically connected to the receiving path and the antenna respectively, wherein the transmitting path includes the radio frequency power amplifier module provided in the first aspect.

[0024] In a fourth aspect, a base station is provided, comprising a baseband processing unit, a digital-to-analog conversion unit, and at least one antenna transceiver module provided in the third aspect, wherein the baseband processing unit is connected to the antenna transceiver module via the digital-to-analog conversion unit.

[0025] Among them, the technical effects brought about by any possible implementation method of the second aspect and the fourth aspect can refer to the technical effects brought about by different implementation methods of the above-mentioned first aspect, and will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1 A schematic diagram of the structure of a base station provided in some embodiments of the present application;

[0028] Figure 2 A circuit diagram of an antenna transceiver module in a base station provided in some embodiments of the present application;

[0029] Figure 3 A schematic diagram of the structure of a radio frequency power amplifier module provided in some embodiments of the present application;

[0030] Figure 4 A schematic diagram of the structure of an isolation element provided in some embodiments of the present application;

[0031] Figure 5 A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0032] Figure 6 A schematic diagram of the three-dimensional structure of a radio frequency power amplifier module provided in some embodiments of the present application;

[0033] Figure 7 A flow chart of a method for manufacturing a radio frequency power amplifier module provided in some embodiments of the present application;

[0034] Figure 8 A schematic diagram of the structure of an isolation element provided in some embodiments of the present application;

[0035] Fig. 9 A schematic diagram of the structure of an isolation element provided in some embodiments of the present application;

[0036] Fig.10 A schematic diagram of the structure of a radio frequency power amplifier module provided in some embodiments of the present application;

[0037] Fig.11 A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0038] Fig.12 A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0039] Fig.13 A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0040] Fig.14A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0041] Fig.15 A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0042] Fig.16 A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0043] Fig.17 A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0044] Fig.18 A schematic diagram of the structure of a radio frequency power amplifier module provided in some other embodiments of the present application;

[0045] Fig.19 A circuit diagram of an antenna transceiver module provided in some embodiments of the present application;

[0046] Fig. 20 A schematic diagram of the structure of a base station provided for some embodiments of the present application. DETAILED DESCRIPTION

[0047] The technical solutions in the embodiments of the present application will be described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments.

[0048] In the embodiments of the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features.

[0049] In the embodiments of the present application, the term “connect” refers to coupling, which includes being directly connected or being indirectly connected via other devices to achieve electrical communication.

[0050] A base station is a radio transceiver that transmits information to user devices through a mobile communication exchange center within a certain radio coverage area. With the development of mobile communication technology, the transmission speed of radio has been improved, but as the signal frequency band increases, the loss also increases, so the coverage capability of the base station is relatively weak.

[0051] In order to ensure the coverage capability of the base station, the base station needs to adopt a massive multiple-input multiple-output (Massive MIMO) antenna transceiver system to obtain beamforming gain and improve the coverage capability of the base station. Figure 1A schematic diagram of the structure of a base station provided in some embodiments of the present application, wherein the base station 100 includes a baseband processing unit 20, a digital-to-analog conversion unit 30, and a multiple-input multiple-output antenna transceiver system 10. The digital-to-analog conversion unit 30 is used to convert the digital baseband signal sent by the baseband processing unit 20 into a small radio frequency signal and send it to the multiple-input multiple-output antenna transceiver system 10. The multiple-input multiple-output antenna transceiver system 10 is used to amplify the small radio frequency signal into a radio frequency signal and send it to other base stations or user equipment. The multiple-input multiple-output antenna transceiver system 10 is also used to receive radio frequency signals sent by other base stations or user equipment, and send the received radio frequency signals to the digital-to-analog conversion unit 30. The digital-to-analog conversion unit 30 is also used to convert the radio frequency signal into a digital signal and send it to the baseband processing unit 20 for processing. The multiple-input multiple-output antenna transceiver system 10 includes a plurality of antenna transceiver modules 11, such as Figure 2 As shown, the antenna transceiver module 11 includes a transmitting path 12, a receiving path 13 and an antenna 14, and the transmitting path 12 is connected to the receiving path 13 and the antenna 14 respectively. The transmitting path 12 includes a driving circuit 101, a power amplifier component 110, an isolation component 120 and a filtering component 102. Exemplarily, the isolation component 120 can be a circulator (circulator, Cir) or an isolator (isolator, Iso). The isolation component 120 is a three-terminal device, wherein the first port of the isolation component 120 is electrically connected to the power amplifier component 110, the second port of the isolation component 120 is electrically connected to the filtering component 102, and the third port of the isolation component 120 is electrically connected to the receiving path 13.

[0052] The radio frequency small signal is amplified step by step into a radio frequency signal through the driving circuit 101 and the power amplifier component 110 to ensure that the radio frequency signal level meets the preset power level value. The amplified radio frequency signal has the characteristics of high power, high efficiency, low distortion, etc., so as to achieve the best transmission effect. The isolation component 120 plays an isolation role to prevent the interference signal reflected from the load end such as the filter component 102 and the antenna 14 from affecting the performance of the power amplifier component 110, and at the same time, it can also reduce the influence of the reflected signal on the digital pre-distortion (DPD) forward correction signal. Finally, since there are some unnecessary harmonics in the output of the power amplifier component 110, it is necessary to filter them out through the filter component 102, so that the radio frequency signal is transmitted by the antenna 14 after passing through the filter component 102 in the forward direction, so as to avoid interference with peripheral devices.

[0053] In some optional examples, the power amplification component 110 and the isolation component 120 can be regarded as a radio frequency power amplifier module, see Figure 3 The schematic diagram of the structure of the radio frequency power amplifier module is shown, and the radio frequency power amplifier module is divided into a metal substrate type power amplifier module, a castle type power amplifier module and a flip-chip type power amplifier module.

[0054] in, Figure 3 The metal substrate type power amplifier module shown in (a) further includes a heat sink layer 132 and a first substrate 130 disposed on the heat sink layer 132. Exemplarily, the heat sink layer 132 is a heat sink layer (heat sink, HS), and the first substrate 130 is a power amplifier board (power amplifier board, PA Board). The power amplifier component 110 and the isolation component 120 are discrete devices, and then the power amplifier component 110 and the isolation component 120 are assembled on the first substrate 130 by surface mounting technology (surface mount technology, SMT). A radio frequency matching circuit is formed in the first substrate 130, and the radio frequency matching circuit is used to match the impedance of the output end of the power amplifier component 110 and the input end of the isolation component 120. The power amplifier component 110 and the isolation component 120 are electrically connected through the radio frequency matching circuit, thereby forming a radio frequency power amplifier module.

[0055] It is understandable that the use of discrete devices for the power amplification component 110 and the isolation component 120 means that the power amplification component 110 and the isolation component 120 are electronic devices that are independently manufactured and used. They are electronic devices that implement specific functions through a single physical component rather than being integrated on a chip.

[0056] In some optional examples, the power amplifying component 110 includes an input matching circuit 112, a power amplifying chip 115, an output matching circuit 117 and a flange structure 119, wherein the input matching circuit 112, the power amplifying chip 115 and the output matching circuit 117 can be integrated on the flange structure 119, the input end of the power amplifying chip 115 is electrically connected to the input matching circuit 112, and the output end of the power amplifying chip 115 is electrically connected to the output matching circuit 117. Accordingly, a hollow portion is provided on the first substrate 130, so that the flange structure 119 of the power amplifying component is embedded in the first substrate 130, and the heat energy generated by the power amplifying chip 115 is directly transferred to the heat dissipation layer 132 through the flange structure 119. It can be understood that the power amplifying component 110 can also include a packaging substrate, and the input matching circuit 112 and the output matching circuit 117 are electrically connected to the packaging substrate, so that the power amplifying component 110 can be used independently.

[0057] See also Figure 4The structural schematic diagram of the isolation component shown in the figure, the isolation component 120 includes a stacked support substrate 121, a uniform magnetic element 122, a ferrite element 123, a ceramic element 124 and a magnetic element 125. A conductive structure is provided in the support substrate 121 for connecting the remaining components of the isolation component 120. At the same time, the conductive structure can realize the transmission and coupling of signals, so that the isolation component 120 can complete its directional coupling function. The uniform magnetic element 122 makes the isolation component 120 have a uniform magnetic field inside to ensure the performance and stability of the isolation component 120. The ferrite element 123 is used as a magnetic core in the isolation component 120, which can effectively concentrate, focus and guide the magnetic field to other parts of the isolation component 120 to realize directional coupling and transmission of signals. The ceramic element 124 can enhance the performance of the isolation component 120, and the magnetic element 125 is used to form a magnetic field inside the isolation component 120.

[0058] Since a radio frequency matching circuit needs to be formed in the first substrate 130, the first substrate 130 needs to be made of materials with good high-frequency performance, such as high-frequency glass fiber reinforced polymer (FR-4), polytetrafluoroethylene (PTFE), etc. These materials have low dielectric loss and good insulation performance, which can reduce signal attenuation and crosstalk, but the cost is high. Figure 3 The castle type amplifier module shown in (ii) is Figure 3 On the basis of the metal substrate type power amplifier module shown in (a) of FIG. 1 , a second substrate 140 is further provided between the heat dissipation layer 132 and the first substrate 130. Exemplarily, the second substrate 140 is a transceiver printed circuit board (TRX PCB). Therefore, a radio frequency matching circuit can be formed on the first substrate 130, and other circuits such as an intermediate frequency circuit, a modulation and demodulation circuit, etc. can be formed on the second substrate 140. The area of ​​the first substrate 130 in the castle type power amplifier module is smaller than that of the first substrate 130 in the metal substrate type power amplifier module, so the cost can be reduced.

[0059] In order to further reduce the size of the RF power amplifier module, Figure 3The flip-chip power amplifier module shown in (iii) includes a heat dissipation layer 132, and a first substrate 130, a third substrate 145 and a second substrate 140 stacked on the heat dissipation layer 132, wherein a power amplification component 110 is arranged on the first substrate 130, and since the first substrate 130 and the third substrate 145 are electrically isolated, a conductive structure 146 is also arranged between the first substrate 130 and the third substrate, so that the first substrate 130 and the third substrate 145 are electrically connected, and the isolation component 120 is arranged on the third substrate 145, and is arranged on a side of the third substrate 145 close to the first substrate 130, and the projection of the isolation component 120 on the first substrate 130 does not overlap with the projection of the power amplification component 110 on the first substrate 130.

[0060] The above three types of RF power amplifier modules all first match the output of the power amplifier component 110 to 50ohm impedance or a specific impedance value near 50ohm, and match the impedance of the first port of the isolation component 120 according to the output impedance of the power amplifier component 110 to ensure that the cascade standing wave is as small as possible and realize lossless or low-loss transmission of RF power. The reflected signal is isolated through the second port of the isolation component 120 to prevent the reflected signal from affecting the performance of the power amplifier component 110.

[0061] However, the above three types of RF power amplifier modules have the following problems: (1) The layout area of ​​the first substrate 130 is large, and the packaging avoidance between the power amplifier component 110 and the isolation component 120 will occupy a certain area, which is not conducive to miniaturization; (2) The insertion loss of the wiring between the power amplifier component 110 and the isolation component 120 brings additional power loss; (3) In large-scale multi-input and multi-output antenna transceiver systems, the cost of using a large number of discrete isolation components 120 is high; (4) The RF consistency problem caused by assembly tolerance and tolerance of isolation components from multiple manufacturers is also more prominent, especially in the "one drive N" system, it is urgent to reduce the digital resource overhead in the system.

[0062] To this end, the present application also provides a radio frequency power amplifier module. Figure 5 and Figure 6 The structural schematic diagram of the RF power amplifier module is shown, and the RF power amplifier module includes: a first substrate 130; a power amplification component 110 and an isolation component 120 arranged on the first substrate 130; the power amplification component 110 is electrically connected to the isolation component 120 through the first substrate 130; wherein the isolation component 120 includes a ferrite element 123 and a first area 133 of the first substrate 130, and the ferrite element 123 is arranged in the first area 133 of the first substrate 130.

[0063] like Figure 7As shown, the process of forming the above-mentioned RF power amplifier module includes: S1: forming a first substrate 130, a power amplifying component 110 and an isolation component 120 respectively, wherein the first substrate 130 includes a first region 133; the isolation component 120 includes a ferrite element 123, and the ferrite element 123 is arranged in the first region 133 of the first substrate 130. S2: electrically connecting the power amplifying component 110 to the first substrate 130.

[0064] In an embodiment of the present application, the ferrite element 123 in the isolation component 120 is directly arranged in the first area 133 of the first substrate 130, and a first connecting circuit can be arranged in the first area 133 of the first substrate 130, and is electrically connected to the rest of the isolation component 120 through the first connecting circuit, for example, it is connected to the ferrite element 123 through the first connecting circuit, that is, the first substrate 130 replaces the supporting substrate in the isolation component 120 in the aforementioned embodiment, which can effectively reduce the cost of the RF power amplifier module. At the same time, there is no need to consider the packaging avoidance problem of the isolation component, so that the routing distance between the isolation component and the power amplification component 110 can be shortened. While reducing the area of ​​the RF power amplifier module, the insertion loss between the power amplification component 110 and the isolation component 120 is reduced, thereby improving the transmission efficiency of the transmission path.

[0065] In an optional embodiment, the isolation component 120 further includes a magnetic element 125, and the magnetic element 125 is stacked above the ferrite element 123. Exemplarily, the magnetic element 125 is a permanent magnet element. Figure 8 From (1) to Figure 8 (iii) in the figure shows a schematic diagram of the structure of each stage of forming the isolation component. The process of forming the isolation component 120 is as follows: a ferrite element 123 and a magnetic element 125 are formed respectively. The ferrite element 123 and the magnetic element 125 can be of the same shape or of different shapes, which is not limited in the embodiment of the present application. For example, the ferrite element 123 and the magnetic element 125 are both cylindrical; or the ferrite element 123 is a cube and the magnetic element 125 is cylindrical. Then, a corresponding circuit pattern 1231 is formed on the surface of the ferrite element 123, and is cured by coating silver paste and sintering. Finally, the ferrite element 123 formed with the circuit pattern is bonded to the magnetic element 125, so as to form an isolation component 120 including the ferrite element 123 and the magnetic element 125. The magnetic element 125 can provide a magnetic field so that the input radio frequency signal can only flow in a specific direction.

[0066] In an optional embodiment, if Fig. 9 (a) and Fig. 9 As shown in (ii), among which, Fig. 9 The second one is Fig. 9In the cross section along AA' in (a), the isolation component 120 further includes a dielectric unit 127. The dielectric unit 127 is a ring structure and is nested around the ferrite element 123, thereby optimizing the magnetic circuit inside the isolation component.

[0067] In an alternative embodiment, see Fig.10 In the structural schematic diagram of the RF power amplifier module shown in FIG. 1 , a RF matching circuit 131 is provided in the first substrate 130, and the RF matching circuit 131 is used to match the output impedance of the power amplifier component 110 with the input impedance of the isolation component 120. Exemplarily, the RF matching circuit 131 can adopt a 50 ohm microstrip line, and a reserved debugging network is provided around the microstrip line, so that a single RF matching circuit 131 is adjustable. The power amplifier component 110 and the isolation component 120 are electrically connected through the RF matching circuit 131. Exemplarily, the input end of the RF matching circuit 131 is electrically connected to the output end of the power amplifying component 110, and the output end of the RF matching circuit 131 is directly electrically connected to the first connecting circuit of the isolation component 120 set in the first area 133 of the first substrate 130, thereby shortening the wiring distance between the isolation component 120 and the power amplifying component 110, reducing the insertion loss between the power amplifying component 110 and the isolation component 120 while reducing the area of ​​the RF power amplifier module, and making the RF channel performance between a single power amplifying component 110 and the isolation component 120 adjustable, thereby ensuring the consistency of RF performance between multiple channels, facilitating integrated design with the Massive MIMO system, and reducing the demand for digital chip resources.

[0068] The following takes a castle-type power amplifier module as an example to further illustrate the RF power amplifier module in the above embodiment.

[0069] See also Fig.11 (a) in the figure shows a schematic diagram of the structure of the RF power amplifier module, wherein the castle-type RF power amplifier module comprises a heat dissipation layer 132, and a second substrate 140 and a first substrate 130 stacked on the heat dissipation layer 132, a power amplification component 110 and an isolation component 120 are arranged on the first substrate 130; the power amplification component 110 is electrically connected to the isolation component 120 through the first substrate 130; wherein the isolation component 120 comprises a ferrite element 123, a magnetic element 125 and a first region 133 of the first substrate 130, the magnetic element 125 is stacked on the ferrite element 123, the ferrite element 123 is arranged on the upper surface of the first region 133 of the first substrate 130, a first connection circuit is arranged in the first region 133 of the first substrate 130, and the first connection circuit is used to connect other parts of the isolation component, for example, the ferrite element 123 is electrically connected to the first connection circuit.

[0070] In an optional example, the power amplification component 110 is a discrete device, for example Fig.11 The power amplifier component 110 shown in (i) in FIG. 1 includes an input matching circuit 112, a power amplifier chip 115, an output matching circuit 117, a flange structure 119 and a packaging substrate, wherein the input matching circuit 112, the power amplifier chip 115 and the output matching circuit 117 can be arranged on the flange structure 119, so that the flange structure 119 can assist the input matching circuit 112, the power amplifier chip 115 and the output matching circuit 117 in heat dissipation, the input end of the power amplifier chip 115 is electrically connected to the input matching circuit 112, and the output end of the power amplifier chip 115 is electrically connected to the output matching circuit 117. A second connecting circuit is arranged in the packaging substrate, and the second connecting circuit is used to connect various circuits of the power amplifier component 110, for example, the second connecting circuit is electrically connected to the input matching circuit 112 and the output matching circuit 117. The second connecting circuit is also electrically connected to the RF matching circuit 131 in the first substrate 130, so that the RF signal output by the output matching circuit 117 can be sent to the RF matching circuit 131.

[0071] However, the packaging of the power amplifying component 110 will also occupy the area of ​​the first substrate 130. Therefore, in order to further miniaturize the RF power amplifier module, in an optional example, see Fig.11 The three-dimensional structure diagram of the RF power amplifier module shown in (ii) and Fig.11 The cross-sectional schematic diagram of the RF power amplifier module shown in (iii) in the figure, the power amplifier component 110 is an integrated device. That is, the power amplifier device includes an input matching circuit 112, a power amplifier chip 115, an output matching circuit 117 and a second region 134 of the first substrate 130, wherein a second connecting circuit is provided in the second region 134 of the first substrate 130, the input matching circuit 112 and the output matching circuit 117 are electrically connected to the second connecting circuit provided in the second region 134 of the first substrate 130, and the second connecting circuit is also directly electrically connected to the RF matching circuit 131 in the first substrate 130, that is, the first substrate 130 replaces the packaging substrate, and in other optional examples, the first substrate can also replace the flange structure 11 9. The input matching circuit 112, the power amplifier chip 115, and the output matching circuit 117 are assisted in heat dissipation, thereby effectively reducing the cost of the RF power amplifier module. At the same time, the power amplifier component 110 and the isolation component 120 can be integrated on the first substrate 130 without considering the packaging avoidance problem of the power amplifier component 110 and the isolation component 120, thereby further shortening the wiring distance between the isolation component and the power amplifier component 110. While reducing the area of ​​the RF power amplifier module, the insertion loss between the power amplifier component 110 and the isolation component 120 is reduced, thereby improving the transmission efficiency of the transmission path.

[0072] It can be understood that the above examples are only examples listed for a better understanding of the technical solutions of the embodiments of the present application, and are not the only limitations on the embodiments of the present application. The ferrite element 123 in the embodiments of the present application is not limited to being set on the surface of the first substrate 130.

[0073] In an alternative example, Fig.12 In the schematic diagram of the structure of the RF power amplifier module shown in (a), the ferrite element 123 can also be embedded in the first substrate 130. A hollow portion 135 is provided in the first region 133 of the first substrate 130, and the hollow portion 135 can at least accommodate part of the ferrite element 123, so that the ferrite element 123 is embedded in the first substrate 130 to form Fig.12 For example, the depth of the hollow portion 135 is less than or equal to the height of the ferrite element 123, thereby forming a Fig.13 The structure of the RF power amplifier module shown in (a) in the figure, wherein at least part of the ferrite element 123 is embedded in the first substrate 130; or the depth of the hollow portion 135 is greater than the height of the ferrite element 123, but less than the total height of the ferrite element 123 and the magnetic element 125, thereby forming Fig.13 The structure of the RF power amplifier module shown in (ii) in FIG. 1 , wherein the entire ferrite element 123 and part of the magnetic element 125 are embedded in the first substrate 130; or, the depth of the hollow portion 135 is equal to the total height of the ferrite element 123 and the magnetic element 125, thereby forming Fig.13 3 shows the structure of the RF power amplifier module, wherein the ferrite element 123 and the magnetic element 125 are both embedded in the first substrate 130 .

[0074] Similarly, the position of the magnetic element 125 is not limited in the embodiment of the present application. The magnetic element 125 can be stacked above the ferrite element 123 or below the ferrite element 123. For example, the magnetic element 125 is embedded in the first substrate 130, and the ferrite element 123 is stacked above the magnetic element 125. A hollow portion 135 is provided in the first area 133 of the first substrate 130. The hollow portion 135 can at least accommodate part of the magnetic element 125, so that the magnetic element 125 can be embedded in the first substrate 130. For example, the depth of the hollow portion 135 is less than or equal to the height of the magnetic element 125, so as to form a hollow portion 135 as shown in FIG. Fig.14 In the structure of the RF power amplifier module shown in (a), at least part of the magnetic element 125 is embedded in the first substrate 130; or the depth of the hollow portion 135 is greater than the height of the magnetic element 125, but less than the total height of the ferrite element 123 and the magnetic element 125, thereby forming Fig.14In the structure of the RF power amplifier module shown in (ii), the entire magnetic element 125 and part of the ferrite element 123 are embedded in the first substrate 130; or, the depth of the hollow portion 135 is equal to the total height of the ferrite element 123 and the magnetic element 125, thereby forming Fig.14 The structure of the RF power amplifier module shown in (iii) in FIG. 1 , wherein the ferrite element 123 and the magnetic element 125 are both embedded in the first substrate 130. In other examples, whether the ferrite element 123 is disposed on the surface of the first region 133 of the first substrate 130 or embedded in the first substrate 130, the magnetic element 125 can also be embedded in the second substrate 140, thereby forming a structure as shown in FIG. Fig.14 Alternatively, the magnetic element 125 may be embedded in the heat dissipation layer 132 to form a structure of the RF power amplifier module shown in (iv) of FIG. Fig.14 The structure of the RF power amplifier module shown in (V) in FIG. 1 only needs the magnetic element 125 to provide a stable magnetic field for the ferrite element 123 .

[0075] The number of the power amplification components 110 and the isolation components 120 is not limited in the embodiment of the present application. Fig.15 The RF power amplifier module shown in (a) in the RF power amplifier module integrates multiple power amplification components 110 and isolation components 120, and the power amplification components 110 and the isolation components 120 correspond to each other one by one, so that multiple RF paths are integrated in one RF power amplifier module to form a Fig.15 The power amplifier circuit shown in (b).

[0076] The following further describes the RF power amplifier module in the above embodiment by taking a metal substrate type power amplifier module as an example.

[0077] See also Fig.16 The schematic diagram of the structure of the RF power amplifier module is shown, and the metal substrate type RF power amplifier module includes a heat dissipation layer 132, and a first substrate 130 stacked on the heat dissipation layer 132, and a power amplification component 110 and an isolation component 120 are arranged on the first substrate 130; the power amplification component 110 is electrically connected to the isolation component 120 through the first substrate 130; wherein the isolation component 120 includes a ferrite element 123, a magnetic element 125 and a first area 133 of the first substrate 130, the magnetic element 125 is stacked on the ferrite element 123, the ferrite element 123 is arranged on the surface of the first area 133 of the first substrate 130, and a first connection circuit is arranged in the first area 133 of the first substrate 130, and the first connection circuit is used to connect other parts of the isolation component.

[0078] The RF power amplifier module in the above embodiment is further described below by taking a flip-chip power amplifier module as an example.

[0079] See also Fig.17 The schematic diagram of the structure of the RF power amplifier module shown in the figure comprises a heat dissipation layer 132 and a first substrate 130, on which a power amplification component 110 and an isolation component 120 are arranged; the heat dissipation layer 132 is arranged on a side of the power amplification component 110 away from the first substrate 130, and the power amplification component 110 is electrically connected to the isolation component 120 through the first substrate 130; wherein the isolation component 120 comprises a ferrite element 123, a magnetic element 125 and a first region 133 of the first substrate 130, the magnetic element 125 is stacked on the ferrite element 123, the ferrite element 123 is arranged on the upper surface of the first region 133 of the first substrate 130, and a first connection circuit is arranged in the first region of the first substrate 130, and the first connection circuit is used to connect other parts of the isolation component, for example, the ferrite element 123 is electrically connected to the first connection circuit.

[0080] It should be noted that when the RF power amplifier module is a metal substrate type power amplifier module and a flip-chip type power amplifier module, the power amplification component 110 in the RF power amplifier module can be a discrete device or an integrated device. At the same time, the embodiment of the present application does not limit the position of the magnetic element 125 in the RF power amplifier module. The magnetic element 125 can be arranged on the upper side or the lower side of the ferrite element 123, as long as the projection of the magnetic element 125 on the first substrate 130 at least partially overlaps with the projection of the ferrite element 123 on the first substrate 130.

[0081] In other embodiments, see Fig.18 The structural schematic diagram of the RF power amplifier module shown in the figure can be a spin wave structure, so that the magnetic element 125 does not need to be set in the isolation component 120, and it is only necessary to set a coating layer 128 on the surface of the ferrite element 123. A RF circuit is set in the coating layer 128, and the RF circuit is electrically connected to the first connecting circuit in the first area 133 of the first substrate 130, so that the input RF signal can only flow along a specific direction.

[0082] The present application also provides an antenna transceiver module 11, see Fig.19 The structural schematic diagram of the antenna transceiver module is shown, and the antenna transceiver module 11 includes a transmitting path 12, a receiving path 13 and an antenna 14, the transmitting path 12 and the antenna 14 are electrically connected, and the receiving path 13 is electrically connected to the antenna 14, wherein the transmitting path 12 includes the RF power amplifier module 103 provided in the above embodiment.

[0083] Exemplarily, the transmission path further includes a driving circuit 101 and a filtering component 102. The output end of the driving circuit 101 is electrically connected to the input end of the RF power amplifier module 103, and the output end of the RF power amplifier module 103 is electrically connected to the filtering component 102.

[0084] The driving circuit 101 sends the received digital baseband signal to the RF power amplifier module 103, and adjusts the digital baseband signal to ensure that the digital baseband signal can be sent out completely. The RF power amplifier module 103 gains the digital baseband signal and modulates the digital baseband signal into a RF signal. The modulated RF signal has the characteristics of high power, high efficiency, low distortion, etc., to achieve the best transmission effect. The modulated RF signal is filtered by the filter component 102 to avoid interference with peripheral devices. Finally, the RF signal is transmitted by the antenna after passing through the filter component 102 in the forward direction. At the same time, since the RF power amplifier module 103 is also integrated with an isolation component 120, the RF power amplifier module 103 can also avoid the interference signal reflected from the load end such as the filter component 102 and the antenna 14 from affecting the performance of the power amplifier component 110, thereby causing the deterioration of the power amplifier component 110, and at the same time, it can also reduce the influence of the reflected signal on the digital pre-distortion (DPD) forward correction signal.

[0085] In the embodiment of the present application, since the isolation component 120 is directly integrated into the RF power amplifier module 103, the cost of the RF power amplifier module 103 can be effectively reduced, thereby reducing the cost of the antenna transceiver module 11. At the same time, the RF power amplifier module 103 shortens the wiring distance between the isolation component 120 and the power amplification component 110, and reduces the insertion loss between the power amplification component 110 and the isolation component 120. Therefore, the transmission efficiency of the antenna transceiver module can be improved while reducing the area of ​​the antenna transceiver module.

[0086] See also Fig. 20 The embodiment of the present application also provides a base station 100, which includes a baseband processing unit 20, a digital-to-analog conversion unit 30 and at least one antenna transceiver module 11 provided in the above embodiment, and the baseband processing unit 20 is connected to the antenna transceiver module 11 through the digital-to-analog conversion unit 30.

[0087] It can be understood that one or more antenna transceiver modules 11 can be set in the base station 100. When the base station is provided with multiple antenna transceiver modules 11, at least one of the multiple antenna transceiver modules 11 is the antenna transceiver module 11 in the above embodiment, thereby reducing the cost of the base station while improving the transmission efficiency of the base station.

[0088] In the description of this specification, specific features, structures, materials or characteristics may be combined in an appropriate manner in any one or more embodiments or examples.

[0089] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency power amplifier module, characterized in that: include: a first substrate; A power amplifying component and an isolating component are disposed on the first substrate; the power amplifying component is electrically connected to the isolating component through the first substrate; The isolation component includes a ferrite element and a first region of a first substrate, and the ferrite element is disposed in the first region of the first substrate.

2. The radio frequency power amplifier module according to claim 1, characterized in that: The power amplifying component includes a power amplifying chip and a second region of the first substrate, and the power amplifying chip is disposed in the second region of the first substrate.

3. The radio frequency power amplifier module according to claim 1 or 2, characterized in that: The isolation component further includes a dielectric unit, which is a ring-shaped structure and is nested around the ferrite element.

4. The radio frequency power amplifier module according to any one of claims 1 to 3, characterized in that: The isolation component further includes a magnetic element, which is disposed on one side of the ferrite element, and a projection of the magnetic element on the first substrate at least partially overlaps with a projection of the ferrite element on the first substrate.

5. The radio frequency power amplifier module according to claim 4, characterized in that: The radio frequency power amplifier module also includes a second substrate, which is located on a side of the first substrate away from the power amplification component, and the second substrate is electrically connected to the first substrate.

6. The radio frequency power amplifier module according to claim 4, characterized in that: The radio frequency power amplifier module also includes a heat dissipation layer, which is located on a side of the first substrate away from the power amplification component.

7. The radio frequency power amplifier module according to any one of claims 1 to 5, characterized in that: The radio frequency power amplifier module also includes a heat dissipation layer, which is located on a side of the power amplification component away from the first substrate.

8. The radio frequency power amplifier module according to claim 5, characterized in that: The magnetic element is embedded in the second substrate.

9. The radio frequency power amplifier module according to claim 6, characterized in that: The magnetic element is embedded in the heat dissipation layer.

10. The radio frequency power amplifier module according to claim 4, characterized in that: The magnetic element is embedded in the first substrate and is arranged on a side of the ferrite element close to the first substrate.

11. The radio frequency power amplifier module according to any one of claims 1 to 6, characterized in that: The ferrite element and the power amplifying component are disposed on the first substrate and are located on the same side of the first substrate.

12. The radio frequency power amplifier module according to any one of claims 1 to 6, characterized in that: The ferrite element is embedded in the first substrate.

13. The radio frequency power amplifier module according to claim 1, characterized in that: The ferrite element is embedded in the first substrate, and a coating layer is arranged on the ferrite element.

14. The radio frequency power amplifier module according to any one of claims 2 to 13, characterized in that: The power amplification component also includes an input matching circuit and an output matching circuit; The input matching circuit and the output matching circuit are arranged in the second area of ​​the first substrate, the input end of the power amplifier chip is electrically connected to the input matching circuit, and the output end of the power amplifier chip is electrically connected to the output matching circuit.

15. The radio frequency power amplifier module according to claim 1, characterized in that: The power amplifier component includes a power amplifier chip, an input matching circuit, an output matching circuit and a packaging substrate. The power amplifier chip, the input matching circuit and the output matching circuit are arranged on the packaging substrate. The input end of the power amplifier chip is electrically connected to the input matching circuit, and the output end of the power amplifier chip is electrically connected to the output matching circuit.

16. A method for manufacturing a radio frequency power amplifier module, characterized in that: include: A first substrate, a power amplifying component and an isolation component are formed respectively; wherein the first substrate includes a first region; the isolation component includes a ferrite element, and the ferrite element is arranged in the first region of the first substrate; The power amplifying component is electrically connected to the first substrate.

17. An antenna transceiver module, characterized in that: It comprises a receiving path, a transmitting path and an antenna, wherein the transmitting path is electrically connected to the receiving path and the antenna respectively, wherein the transmitting path comprises a radio frequency power amplifier module as described in any one of claims 1-15.

18. A base station, characterized in that: It comprises a baseband processing unit, a digital-to-analog conversion unit and at least one antenna transceiver module as claimed in claim 17, wherein the baseband processing unit is connected to the antenna transceiver module via the digital-to-analog conversion unit.

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