Single-side heating structure and preparation method thereof

Abstract

The embodiment of the invention provides a single-side heating structure and a preparation method thereof, the single-side heating structure comprises layer structures, an ion layer, a first electrode and a heating layer, and at least one layer of cavity is arranged between the layer structures; the ion layer is an inert charged ionic group mixture layer formed by bombarding a zero-group element simple substance and a sixth auxiliary main group element simple substance by high-energy electrons, and the ion layer is filled in a cavity in the layer structure; the first electrode is arranged in the cavity of the layer structure; the heating layer is arranged on the surface of one side of the layer structure, is connected with a power supply and is used for heating one side of the layer structure when being electrified. According to the single-side heating structure, the inert charged ionic group mixture formed through high-energy electron bombardment can block infrared rays and ultraviolet rays, and obtained ions show intrinsic inertness through electrode adsorption, so that the radiation speed in the cavity is extremely low, and the heating layer can provide all heat to one side during heating.

Description

Technical Field

[0001] The invention relates to the technical field of thermal insulation and heating of building materials, and in particular to a single-side heating structure and a preparation method thereof. Background Art

[0002] With the advancement of science and technology, more and more new thermal insulation glasses have been developed. These glasses have effectively improved their thermal insulation performance through special design and material selection. At the same time, the introduction of some advanced production processes and equipment has further improved the quality and performance of glass products. However, the existing problems cannot be ignored. The problems existing in thermal insulation technology mainly include poor thermal insulation effect, unsatisfactory sound insulation effect, high energy consumption and relatively short service life. These problems are mainly caused by factors such as structural construction, material selection, manufacturing process and use environment. Moreover, ordinary thermal insulation glass only has thermal insulation function and cannot increase the indoor temperature. Therefore, a structure that can be insulated on one side and heated on the other side is needed, so as to prevent heat loss and provide heat to maintain temperature. Summary of the invention

[0003] The embodiment of the present invention provides a single-sided heating structure and a preparation method thereof to solve one or more technical problems encountered in the prior art.

[0004] In a first aspect, an embodiment of the present invention provides a single-sided heating structure, comprising:

[0005] A layer structure, wherein the layer structure includes at least one layer of cavity between the layers;

[0006] An ion layer, wherein the ion layer is a mixture layer of inert charged ion groups formed by high-energy electron bombardment of a single substance of a zero-group element and a single substance of a sixth sub-main-group element, and the ion layer is filled in a cavity within the layer structure;

[0007] a first electrode, the first electrode being disposed in the cavity of the layer structure, the first electrode being continuously energized to adsorb the charged ion cluster layer;

[0008] A heat generating layer is provided on a surface of one side of the layer structure, the heat generating layer is connected to a power source, and the heat generating layer is used to generate heat on one side of the layer structure when power is supplied.

[0009] In a preferred embodiment, the heating layer includes a heating film, a second electrode and a packaging layer, the heating film is a conductive heating film layer of semiconductor metal oxide that is vacuum sputtered on the surface of one side of the layer structure, the second electrode is arranged on both sides of the heating film, the second electrode is connected to a power supply, the packaging layer covers the heating film, and the packaging layer is used to package the heating film, the second electrode and the layer structure into one.

[0010] In a preferred embodiment, the heating film has a thickness of 10 nm to 1000 nm.

[0011] In a preferred embodiment, the heating film is a conductive heating film layer formed by vacuum coating of a semiconductor metal oxide selected from the group consisting of ZnOxS(1-x), InOxS(1-x), SnxIn(1-x)O, ZnxMg(1-x)O and ZnxAl(1-x)O.

[0012] In a preferred embodiment, the zero group element single substance includes a gas single substance selected from helium, neon, argon, krypton, xenon, and radon; the sixth sub-main group element single substance includes a metal single substance selected from chromium, molybdenum, and tungsten.

[0013] In a preferred embodiment, the light transmittance of the layer structure is above 40%.

[0014] In a preferred embodiment, the single-sided heating structure further includes a temperature control device, which is electrically connected to the heating layer, and is used to adjust the voltage of the heating layer to control the temperature of the heating layer.

[0015] In a second aspect, an embodiment of the present invention provides a method for preparing a single-sided heating structure, comprising:

[0016] preparing a layer structure including at least one layer of cavities;

[0017] A mixture layer of inert charged ion groups formed by high-energy electron bombardment of a single substance of a zero group element and a single substance of a sixth sub-main group element;

[0018] The gas in the cavity is evacuated to form a negative pressure structure;

[0019] Filling the inert charged ion group mixture layer into the cavity of the layer structure and sealing it;

[0020] A first electrode is disposed in the cavity in the layer structure and is continuously energized;

[0021] Covering the heat-generating film formed on one side of the layer structure with a semiconductor metal oxide by vacuum sputtering;

[0022] Arrange second electrodes on both sides of the heating film, and electrically connect the second electrodes to a power source;

[0023] The heating film and the second electrode are packaged so that the heating film, the second electrode and the layer structure are packaged as a whole.

[0024] In a preferred embodiment, the zero group element single substance includes a gas single substance selected from helium, neon, argon, krypton, xenon, and radon; the sixth sub-main group element single substance includes a metal single substance selected from chromium, molybdenum, and tungsten.

[0025] In a preferred embodiment, the high energy electron bombardment is ionization using an ultra-high voltage electromagnetic field of 5000V to 7000V.

[0026] One of the above technical solutions has the following advantages or beneficial effects: the mixture of inert charged ion groups formed by high-energy electron bombardment in the single-sided heating structure can block infrared and ultraviolet rays, and the obtained ions show their essential inertness through electrode adsorption, so that the radiation speed in the cavity is extremely slow, and the heating layer can provide all the heat to one side due to the presence of the thermal insulation layer when heating.

[0027] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present invention will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments disclosed in the present invention and should not be regarded as limiting the scope of the present invention.

[0029] Figure 1 A cross-sectional view of a single-sided heating structure according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0030] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present invention. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.

[0031] In the first aspect, the embodiment of the present invention provides a single-sided heating structure, see Figure 1 As shown, the single-sided heating structure includes a layer structure 100, an ion layer, a first electrode 300, and a heating layer.

[0032] The layer structures 100 include at least one layer of cavities 200 therebetween.

[0033] The ion layer is a mixture layer of inert charged ion groups formed by high-energy electron bombardment of a single substance of a zero-group element and a single substance of a sixth sub-main-group element. The ion layer is filled in the cavity 200 in the layer structure 100 .

[0034] The first electrode 300 is disposed in the cavity 200 of the layer structure 100 , and the first electrode 300 is continuously energized to adsorb the charged ion cluster layer.

[0035] The heat generating layer is disposed on a surface of one side of the layer structure 100 . The heat generating layer is connected to a power source. The heat generating layer is used to generate heat on one side of the layer structure 100 when power is supplied.

[0036] Further, see Figure 1 As shown, the heating layer includes a heating film 400, a second electrode 500 and an encapsulation layer 600. The heating film 400 is a conductive heating film layer of semiconductor metal oxide that is vacuum sputtered on the surface of one side of the layer structure 100. The second electrode 500 is arranged on both sides of the heating film 400. The second electrode 500 is connected to a power source. The encapsulation layer 600 covers the heating film 400. The encapsulation layer 600 is used to encapsulate the heating film 400, the second electrode 500 and the layer structure 100 as a whole.

[0037] The single-sided heating structure of this embodiment forms an inert charged ion group mixture through high-energy electron bombardment, which can block infrared and ultraviolet rays. The obtained ions are adsorbed by electrodes to show their essential inertness, so that the radiation speed in the cavity is extremely slow. Moreover, when heating, the heating layer can provide all the heat to one side due to the existence of the thermal insulation layer.

[0038] In a specific embodiment, the heating film 400 has a thickness of 10 nm to 1000 nm.

[0039] Furthermore, the heating film 400 is a conductive heating film layer formed by vacuum coating of a semiconductor metal oxide selected from the group consisting of ZnOxS(1-x), InOxS(1-x), SnxIn(1-x)O, ZnxMg(1-x)O and ZnxAl(1-x)O.

[0040] Furthermore, the zero group element single substance includes a gas single substance selected from helium, neon, argon, krypton, xenon, and radon; the sixth sub-main group element single substance includes a metal single substance selected from chromium, molybdenum, and tungsten.

[0041] Furthermore, the light transmittance of the layer structure 100 is greater than 40%.

[0042] In a specific embodiment, the single-sided heating structure further includes a temperature control device, which is electrically connected to the heating layer, and is used to adjust the voltage of the heating layer to control the temperature of the heating layer.

[0043] In a second aspect, an embodiment of the present invention provides a method for preparing a single-sided heating structure. The prepared single-sided heating structure is shown in FIG. Figure 1As shown, the preparation method of the single-sided heating structure includes:

[0044] S1: preparing a layer structure including at least one layer of cavities.

[0045] S2: A mixture layer of inert charged ion clusters formed by high-energy electron bombardment of a single substance of a zero group element and a single substance of a sixth sub-main group element.

[0046] S3: Evacuate the gas in the cavity to form a negative pressure structure.

[0047] S4: Filling the inert charged ion group mixture layer into the cavity of the layer structure and sealing it.

[0048] S5: The first electrode is arranged in the cavity in the layer structure and is continuously energized.

[0049] S6: Covering the heat-generating film formed on one surface of the layer structure with a semiconductor metal oxide by vacuum sputtering.

[0050] S7: second electrodes are arranged on both sides of the heating film, and the second electrodes are electrically connected to a power source.

[0051] S8: Encapsulating the heating film and the second electrode so that the heating film, the second electrode and the layer structure are encapsulated as a whole.

[0052] Furthermore, the zero group element single substance includes a gas single substance selected from helium, neon, argon, krypton, xenon, and radon; the sixth sub-main group element single substance includes a metal single substance selected from chromium, molybdenum, and tungsten.

[0053] Furthermore, the high-energy electron bombardment is ionization using an ultra-high voltage electromagnetic field of 5000V to 7000V.

[0054] In the present embodiment, when preparing a single-sided heating structure, the inert charged ion group mixture formed by high-energy electron bombardment can block infrared and ultraviolet rays, and the obtained ions show their essential inertness through electrode adsorption, so that the radiation speed in the cavity is extremely slow, and the heating layer can provide all the heat to one side due to the existence of the thermal insulation layer when heating.

[0055] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are contradictory.

[0056] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0057] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art can easily think of various changes or substitutions within the technical scope disclosed by the present invention, which should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims

1. A single-sided heating structure, characterized in that: include: A layer structure, wherein the layer structure includes at least one layer of cavity between the layers; An ion layer, wherein the ion layer is a mixture layer of inert charged ion groups formed by high-energy electron bombardment of a single substance of a zero-group element and a single substance of a sixth sub-main-group element, and the ion layer is filled in a cavity within the layer structure; A first electrode, the first electrode is disposed in the cavity of the layer structure, and the first electrode is continuously energized to adsorb the charged ion cluster layer; A heat generating layer is provided on a surface of one side of the layer structure, the heat generating layer is connected to a power source, and is used for generating heat on one side of the layer structure when power is supplied.

2. The single-sided heating structure according to claim 1, characterized in that: The heating layer includes a heating film, a second electrode and a packaging layer. The heating film is a conductive heating film layer of semiconductor metal oxide that is vacuum sputtered on the surface of one side of the layer structure. The second electrode is arranged on both sides of the heating film. The second electrode is connected to a power supply. The packaging layer covers the heating film. The packaging layer is used to package the heating film, the second electrode and the layer structure into one.

3. The single-sided heating structure according to claim 1, characterized in that: The thickness of the heating film is 10nm-1000nm.

4. The single-sided heating structure according to claim 1, characterized in that: The heating film is a conductive heating film layer formed by vacuum coating of a semiconductor metal oxide selected from the group consisting of ZnOxS(1-x), InOxS(1-x), SnxIn(1-x)O, ZnxMg(1-x)O and ZnxAl(1-x)O.

5. The single-sided heating structure according to claim 1, characterized in that: The zero group element single substance includes a gas single substance selected from helium, neon, argon, krypton, xenon, and radon; the sixth sub-main group element single substance includes a metal single substance selected from chromium, molybdenum, and tungsten.

6. The single-sided heating structure according to claim 1, characterized in that: The light transmittance of the layer structure is above 40%.

7. The single-sided heating structure according to claim 1, characterized in that: It also includes a temperature control device, which is electrically connected to the heating layer and is used to adjust the voltage of the heating layer to control the temperature of the heating layer.

8. A method for preparing a single-sided heating structure, characterized in that: include: preparing a layer structure including at least one layer of cavities; A mixture layer of inert charged ion groups formed by high-energy electron bombardment of a single substance of a zero group element and a single substance of a sixth sub-main group element; The gas in the cavity is evacuated to form a negative pressure structure; Filling the inert charged ion group mixture layer into the cavity of the layer structure and sealing it; A first electrode is disposed in the cavity in the layer structure and is continuously energized; Covering the heat-generating film formed on one side of the layer structure with a semiconductor metal oxide by vacuum sputtering; Arrange second electrodes on both sides of the heating film, and electrically connect the second electrodes to a power source; The heating film and the second electrode are packaged so that the heating film, the second electrode and the layer structure are packaged as a whole.

9. The method for preparing a single-sided heating structure according to claim 8, characterized in that: The zero group element single substance includes a gas single substance selected from helium, neon, argon, krypton, xenon, and radon; the sixth sub-main group element single substance includes a metal single substance selected from chromium, molybdenum, and tungsten.

10. The method for preparing a single-sided heating structure according to claim 8, characterized in that: The high energy electron bombardment is ionization using an ultra-high voltage electromagnetic field of 5000V to 7000V.

Images