Silicon-based GaN-HEMT epitaxial structure and manufacturing method thereof

Abstract

The invention discloses a silicon-based GaN-HEMT epitaxial structure and a manufacturing method thereof, and belongs to the technical field of semiconductor device design and manufacturing, the silicon-based GaN-HEMT epitaxial structure comprises a substrate, the substrate is a silicon substrate, a nucleating layer is epitaxially grown on the substrate, a defect filtering layer is epitaxially grown on the nucleating layer, and the defect filtering layer is arranged on the substrate. An impurity regulation and control layer is epitaxially grown on the defect filtering layer, a channel layer is epitaxially grown on the impurity regulation and control layer, a barrier layer is epitaxially grown on the channel layer, the defect filtering layer deposits a GaN layer on the nucleating layer, and the GaN layer structurally comprises a plurality of vertical insertion layers. According to the silicon-based GaN-HEMT epitaxial structure and the manufacturing method thereof, the silicon-based GaN-HEMT epitaxial structure comprises a nucleating layer, a defect filtering layer, an impurity regulation and control layer, a channel layer and a barrier layer, the electrical performance, reliability and consistency of a device are improved, defects can be effectively reduced, impurity distribution can be effectively controlled by optimizing materials and growth process parameters of all layers, and the performance of the device is improved. And the voltage-resistant electric leakage performance of the device is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor device design and manufacturing, and in particular to a silicon-based GaN-HEMT epitaxial structure and a manufacturing method thereof. Background Art

[0002] With the widespread application of silicon-based GaN-HEMT devices in the fields of high frequency and high power, the improvement of their performance has become a research focus. The existing silicon-based HEMT epitaxial structure is easily affected by factors such as lattice mismatch, thermal mismatch and uneven impurity distribution during the growth process, which leads to unstable device performance. Therefore, it is of great significance to develop an epitaxial structure that can effectively solve these problems. To this end, a silicon-based GaN-HEMT epitaxial structure and a manufacturing method thereof are proposed. Summary of the invention

[0003] The object of the present invention is to provide a silicon-based GaN-HEMT epitaxial structure and a method for manufacturing the same, so as to solve the problems raised in the above-mentioned background technology.

[0004] To achieve the above object, the present invention provides the following technical solution: a silicon-based GaN-HEMT epitaxial structure, comprising a substrate, the substrate being a silicon substrate, a nucleation layer being epitaxially grown on the substrate, a defect filter layer being epitaxially grown on the nucleation layer, an impurity regulation layer being epitaxially grown on the defect filter layer, a channel layer being epitaxially grown on the impurity regulation layer, and a barrier layer being epitaxially grown on the channel layer;

[0005] The defect filtering layer is a GaN layer deposited on the nucleation layer, wherein the GaN layer structure includes a plurality of vertical insertion layers, which are used as defect filtering to reduce defects transmitted from the nucleation layer to subsequent layers;

[0006] Wherein, the vertical insertion layer is AlxGa1-xN or AlyGa1-yN, and the AlxGa1-xN or AlyGa1-yN in the vertical insertion layer is a well barrier structure, and the total thickness of the periodic structure is 200nm-300nm;

[0007] The single layer thickness is 10nm-20nm, wherein 50%≤X≤100%, 0%≤Y<50%;

[0008] The number of vertical insertion layers ranges from 5 to 20.

[0009] As a further preferred embodiment of the present technical solution: multiple vertical insertion layers utilize periodic wide and narrow band gaps to redirect screw dislocations along the growth direction at the interface while maintaining a certain buffer zone, and multiple vertical insertions help to ensure that most defects are buried, thereby filtering out most defects while maintaining growth uniformity and consistency.

[0010] As a further preferred embodiment of the present technical solution: the impurity control layer is used to absorb and fix impurity atoms, thereby reducing their influence on the channel layer and the barrier layer, and the impurity control layer is a composite compensatory doping structure, the compensatory doping sources are C2H4 and Cp2Fe, and GaN:C or GaN:C+Fe is doped periodically.

[0011] As a further preferred embodiment of the present technical solution: the total thickness of the impurity control layer is 500nm-2500nm, and the thickness of a single period is 10nm-20nm;

[0012] Among them, the carbon doping concentration of the gallium nitride layer doped with the carbon layer is 8e18-2e19at / cm 3 ;

[0013] Among them, the gallium nitride layer is doped with carbon, and the carbon doping concentration in the iron layer is 5e18-7e18at / cm 3 , the iron doping concentration is 1e18-3e18at / cm 3 .

[0014] As a further preferred embodiment of the present technical solution: periodic carbon doping can introduce P-type doping to compensate for the n-type conductive characteristics of intrinsic gallium nitride;

[0015] And a specific concentration of iron doping is introduced periodically to form deep energy level traps, thereby capturing the remaining electrons and forming high-energy properties of the material while avoiding the introduction of excessive doping impurities.

[0016] As a further preferred embodiment of the present technical solution: the nucleation layer uses AlIn as the nucleation layer and is grown on the substrate by MOCVD technology, thereby promoting good growth of subsequent AlGaN / GaN layers.

[0017] As a further preferred embodiment of the present technical solution: the channel layer is a high-quality intrinsic GaN layer grown, and a high-mobility electron channel is obtained by optimizing the growth conditions.

[0018] As a further preferred embodiment of the present technical solution: the thickness of the channel layer is 200nm-1000nm, and the optimized growth conditions are temperature, pressure and gas flow rate.

[0019] As a further preferred embodiment of the present technical solution: the barrier layer is a layer of AlGaN deposited on the channel layer, and the effective accumulation and high mobility of electrons are ensured by precisely controlling the Al content and growth parameters.

[0020] A method for manufacturing a silicon-based GaN-HEMT epitaxial structure, the manufacturing method comprising:

[0021] Providing a silicon substrate;

[0022] A GaN-HEMT epitaxial structure is formed on the silicon substrate by using a metal organic chemical vapor deposition process, including:

[0023] A nucleation layer, a defect filtering layer, an impurity regulating layer, a channel layer and a barrier layer are epitaxially grown in sequence from bottom to top on the silicon substrate.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The present invention discloses a silicon-based GaN-HEMT epitaxial structure and a manufacturing method thereof, comprising a nucleation layer, a defect filtering layer, an impurity regulating layer, a channel layer and a barrier layer, and aims to improve the electrical performance, reliability and consistency of the device. By optimizing the materials of each layer and the growth process parameters, the present invention can effectively reduce defects, control the impurity distribution, and improve the withstand voltage and leakage performance of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 This is a process architecture diagram of a silicon-based GaN-HEMT epitaxial structure of the present invention;

[0027] Figure 2 A schematic diagram of the structure of multiple vertical insertion layers in a silicon-based GaN-HEMT epitaxial structure of the present invention;

[0028] Figure 3 A schematic diagram of the architecture of a doping structure in a silicon-based GaN-HEMT epitaxial structure of the present invention;

[0029] Figure 4 The present invention is a schematic diagram of a device verification withstand voltage-leakage curve in a silicon-based GaN-HEMT epitaxial structure and a manufacturing method thereof.

[0030] In the figure: 1. Barrier layer; 2. Channel layer; 3. Impurity control layer; 4. Defect filtering layer; 5. Nucleation layer; 6. Substrate. DETAILED DESCRIPTION

[0031] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0032] See also Figure 1-Figure 3 The present invention provides a technical solution: a silicon-based GaN-HEMT epitaxial structure, comprising a substrate 6, the substrate 6 is a silicon substrate, a nucleation layer 5 is epitaxially grown on the substrate 6, a defect filter layer 4 is epitaxially grown on the nucleation layer 5, an impurity regulation layer 3 is epitaxially grown on the defect filter layer 4, a channel layer 2 is epitaxially grown on the impurity regulation layer 3, and a barrier layer 1 is epitaxially grown on the channel layer 2;

[0033] The defect filtering layer 4 is a GaN layer deposited on the nucleation layer 5, wherein the GaN layer structure includes a plurality of vertical insertion layers, which are used as defect filtering to reduce defects transmitted from the nucleation layer 5 to subsequent layers;

[0034] Wherein, the vertical insertion layer is AlxGa1-xN or AlyGa1-yN, and the AlxGa1-xN or AlyGa1-yN in the vertical insertion layer is a well barrier structure, and the total thickness of the periodic structure is 200nm-300nm;

[0035] The single layer thickness is 10nm-20nm, wherein 50%≤X≤100%, 0%≤Y<50%;

[0036] The number of vertical insertion layers ranges from 5 to 20.

[0037] In this embodiment, specifically: multiple vertical insertion layers utilize periodic wide and narrow band gaps to redirect screw dislocations along the growth direction at the interface while maintaining a certain buffer zone, and multiple vertical insertions help to ensure that most defects are buried, thereby filtering out most defects while maintaining growth uniformity and consistency.

[0038] In this embodiment, specifically: the impurity control layer 3 is used to absorb and fix impurity atoms, thereby reducing their influence on the channel layer 2 and the barrier layer 1. The impurity control layer 3 is a composite compensatory doping structure, the compensatory doping sources are C2H4 and Cp2Fe, and GaN:C or GaN:C+Fe is doped periodically.

[0039] In this embodiment, specifically: the total thickness of the impurity control layer 3 is 500nm-2500nm, and the thickness of a single period is 10nm-20nm;

[0040] Among them, the carbon doping concentration of the gallium nitride layer doped with the carbon layer is 8e18-2e19at / cm 3 ;

[0041] Among them, the gallium nitride layer is doped with carbon, and the carbon doping concentration in the iron layer is 5e18-7e18at / cm 3 , the iron doping concentration is 1e18-3e18at / cm 3 .

[0042] In this embodiment, specifically: periodic carbon doping can introduce P-type doping on the one hand, compensating for the n-type conductive characteristics of intrinsic gallium nitride;

[0043] And a specific concentration of iron doping is introduced periodically to form deep energy level traps, thereby capturing the remaining electrons and forming high-energy properties of the material while avoiding the introduction of excessive doping impurities.

[0044] In this embodiment, specifically: the nucleation layer 5 uses AlN as the nucleation layer, and is grown on the substrate 6 by MOCVD technology, thereby promoting the growth of subsequent AlGaN / GaN layers.

[0045] In this embodiment, specifically: the channel layer 2 is a high-quality intrinsic GaN layer grown, and a high-mobility electron channel is obtained by optimizing the growth conditions.

[0046] In this embodiment, specifically: the thickness of the channel layer 2 is 200nm-1000nm, and the optimized growth conditions are temperature, pressure and gas flow rate.

[0047] In this embodiment, specifically: the barrier layer 1 is a layer of AlGaN deposited on the channel layer 2, and the effective accumulation and high mobility of electrons are ensured by precisely controlling the Al content and growth parameters.

[0048] A method for manufacturing a silicon-based GaN-HEMT epitaxial structure, the manufacturing method comprising:

[0049] Providing a silicon substrate;

[0050] A GaN-HEMT epitaxial structure is formed on the silicon substrate by using a metal organic chemical vapor deposition process, including:

[0051] A nucleation layer, a defect filtering layer, an impurity regulating layer, a channel layer and a barrier layer are epitaxially grown in sequence from bottom to top on the silicon substrate.

[0052] Experimental example

[0053] See also Figure 4 , a schematic diagram of a device verification withstand voltage-leakage curve in a silicon-based GaN-HEMT epitaxial structure and a manufacturing method thereof, it can be seen that through a silicon-based GaN-HEMT epitaxial structure and a manufacturing method thereof (red part) of the present invention, the vertical breakdown voltage is greater than 1000V, which is better than the traditional process (blue part), and when the vertical withstand voltage is 700V, the leakage current is less than 10nA. In summary, the present invention can effectively improve the electrical performance, reliability and consistency of the device, and by optimizing the materials of each layer and the growth process parameters, it can effectively reduce defects, control impurity distribution, and improve the withstand voltage and leakage performance of the device;

[0054] Among them, the electrical characteristics of the epitaxial structure produced by the present application are enhanced to 1200V, and the isolation leakage performance is reduced by one order of magnitude, from 100nA@700v to 10nA@700v.

[0055] Example 1

[0056] A silicon-based GaN-HEMT epitaxial structure includes a substrate 6, the substrate 6 is a silicon substrate, a nucleation layer 5 is epitaxially grown on the substrate 6, a defect filter layer 4 is epitaxially grown on the nucleation layer 5, an impurity regulation layer 3 is epitaxially grown on the defect filter layer 4, a channel layer 2 is epitaxially grown on the impurity regulation layer 3, and a barrier layer 1 is epitaxially grown on the channel layer 2;

[0057] The defect filtering layer 4 is a GaN layer deposited on the nucleation layer 5, wherein the GaN layer structure includes a plurality of vertical insertion layers, which are used as defect filtering to reduce defects transmitted from the nucleation layer 5 to subsequent layers;

[0058] Wherein, the vertical insertion layer is AlxGa1-xN or AlyGa1-yN, and the AlxGa1-xN or AlyGa1-yN in the vertical insertion layer is a well barrier structure, and the total thickness of the periodic structure is 220nm;

[0059] The single layer thickness is 12 nm, where 50%≤X≤100%, 0%≤Y<50%;

[0060] The number of vertical insertion layers ranges from 8.

[0061] In this embodiment, specifically: multiple vertical insertion layers utilize periodic wide and narrow band gaps to redirect screw dislocations along the growth direction at the interface while maintaining a certain buffer zone, and multiple vertical insertions help to ensure that most defects are buried, thereby filtering out most defects while maintaining growth uniformity and consistency.

[0062] In this embodiment, specifically: the impurity control layer 3 is used to absorb and fix impurity atoms, thereby reducing their influence on the channel layer 2 and the barrier layer 1. The impurity control layer 3 is a composite compensatory doping structure, the compensatory doping sources are C2H4 and Cp2Fe, and GaN:C or GaN:C+Fe is periodically doped.

[0063] In this embodiment, specifically: the total thickness of the impurity control layer 3 is 800nm, and the thickness of a single period is 12nm;

[0064] Among them, the carbon doping concentration of the gallium nitride layer doped with the carbon layer is 8e18at / cm 3 ;

[0065] Among them, the gallium nitride layer is doped with carbon, and the carbon doping concentration in the iron layer is 5e18at / cm 3 , the iron doping concentration is 1e18at / cm 3 .

[0066] In this embodiment, specifically: periodic carbon doping can introduce P-type doping on the one hand, compensating for the n-type conductive characteristics of intrinsic gallium nitride;

[0067] And a specific concentration of iron doping is introduced periodically to form deep energy level traps, thereby capturing the remaining electrons and forming high-energy properties of the material while avoiding the introduction of excessive doping impurities.

[0068] In this embodiment, specifically: the nucleation layer 5 uses AlN as the nucleation layer, and is grown on the substrate 6 by MOCVD technology, thereby promoting the growth of subsequent AlGaN / GaN layers.

[0069] In this embodiment, specifically: the channel layer 2 is a high-quality intrinsic GaN layer grown, and a high-mobility electron channel is obtained by optimizing the growth conditions.

[0070] In this embodiment, specifically: the thickness of the channel layer 2 is 400 nm, and the optimized growth conditions are temperature, pressure and gas flow rate.

[0071] In this embodiment, specifically: the barrier layer 1 is a layer of AlGaN deposited on the channel layer 2, and the effective accumulation and high mobility of electrons are ensured by precisely controlling the Al content and growth parameters.

[0072] A method for manufacturing a silicon-based GaN-HEMT epitaxial structure, the manufacturing method comprising:

[0073] Providing a silicon substrate;

[0074] A GaN-HEMT epitaxial structure is formed on the silicon substrate by using a metal organic chemical vapor deposition process, including:

[0075] A nucleation layer, a defect filtering layer, an impurity regulating layer, a channel layer and a barrier layer are epitaxially grown in sequence from bottom to top on the silicon substrate.

[0076] Example 2

[0077] A silicon-based GaN-HEMT epitaxial structure includes a substrate 6, the substrate 6 is a silicon substrate, a nucleation layer 5 is epitaxially grown on the substrate 6, a defect filter layer 4 is epitaxially grown on the nucleation layer 5, an impurity regulation layer 3 is epitaxially grown on the defect filter layer 4, a channel layer 2 is epitaxially grown on the impurity regulation layer 3, and a barrier layer 1 is epitaxially grown on the channel layer 2;

[0078] The defect filtering layer 4 is a GaN layer deposited on the nucleation layer 5, wherein the GaN layer structure includes a plurality of vertical insertion layers, which are used as defect filtering to reduce defects transmitted from the nucleation layer 5 to subsequent layers;

[0079] Wherein, the vertical insertion layer is AlxGa1-xN or AlyGa1-yN, and the AlxGa1-xN or AlyGa1-yN in the vertical insertion layer is a well barrier structure, and the total thickness of the periodic structure is 240nm;

[0080] The single layer thickness is 14 nm, where 50%≤X≤100%, 0%≤Y<50%;

[0081] The value range of the number of vertical insertion layers is 10.

[0082] In this embodiment, specifically: multiple vertical insertion layers utilize periodic wide and narrow band gaps to redirect screw dislocations along the growth direction at the interface while maintaining a certain buffer zone, and multiple vertical insertions help to ensure that most defects are buried, thereby filtering out most defects while maintaining growth uniformity and consistency.

[0083] In this embodiment, specifically: the impurity control layer 3 is used to absorb and fix impurity atoms, thereby reducing their influence on the channel layer 2 and the barrier layer 1. The impurity control layer 3 is a composite compensatory doping structure, the compensatory doping sources are C2H4 and Cp2Fe, and GaN:C or GaN:C+Fe is doped periodically.

[0084] In this embodiment, specifically: the total thickness of the impurity control layer 3 is 1200nm, and the thickness of a single period is 14nm;

[0085] Among them, the carbon doping concentration of the gallium nitride layer doped with the carbon layer is 8e18at / cm 3 ;

[0086] Among them, the gallium nitride layer is doped with carbon, and the carbon doping concentration in the iron layer is 5e18at / cm 3 , the iron doping concentration is 1e18at / cm 3 .

[0087] In this embodiment, specifically: periodic carbon doping can introduce P-type doping on the one hand, compensating for the n-type conductive characteristics of intrinsic gallium nitride;

[0088] And a specific concentration of iron doping is introduced periodically to form deep energy level traps, thereby capturing the remaining electrons and forming high-energy properties of the material while avoiding the introduction of excessive doping impurities.

[0089] In this embodiment, specifically: the nucleation layer 5 uses AlN as the nucleation layer, and is grown on the substrate 6 by MOCVD technology, thereby promoting the growth of subsequent AlGaN / GaN layers.

[0090] In this embodiment, specifically: the channel layer 2 is a high-quality intrinsic GaN layer grown, and a high-mobility electron channel is obtained by optimizing the growth conditions.

[0091] In this embodiment, specifically: the thickness of the channel layer 2 is 600 nm, and the optimized growth conditions are temperature, pressure and gas flow rate.

[0092] In this embodiment, specifically: the barrier layer 1 is a layer of AlGaN deposited on the channel layer 2, and the effective accumulation and high mobility of electrons are ensured by precisely controlling the Al content and growth parameters.

[0093] A method for manufacturing a silicon-based GaN-HEMT epitaxial structure, the manufacturing method comprising:

[0094] Providing a silicon substrate;

[0095] A GaN-HEMT epitaxial structure is formed on the silicon substrate by using a metal organic chemical vapor deposition process, including:

[0096] A nucleation layer, a defect filtering layer, an impurity regulating layer, a channel layer and a barrier layer are epitaxially grown in sequence from bottom to top on the silicon substrate.

[0097] Example 3

[0098] A silicon-based GaN-HEMT epitaxial structure includes a substrate 6, the substrate 6 is a silicon substrate, a nucleation layer 5 is epitaxially grown on the substrate 6, a defect filter layer 4 is epitaxially grown on the nucleation layer 5, an impurity regulation layer 3 is epitaxially grown on the defect filter layer 4, a channel layer 2 is epitaxially grown on the impurity regulation layer 3, and a barrier layer 1 is epitaxially grown on the channel layer 2;

[0099] The defect filtering layer 4 is a GaN layer deposited on the nucleation layer 5, wherein the GaN layer structure includes a plurality of vertical insertion layers, which are used as defect filtering to reduce defects transmitted from the nucleation layer 5 to subsequent layers;

[0100] Wherein, the vertical insertion layer is AlxGa1-xN or AlyGa1-yN, and the AlxGa1-xN or AlyGa1-yN in the vertical insertion layer is a well barrier structure, and the total thickness of the periodic structure is 260nm;

[0101] The single layer thickness is 16 nm, where 50%≤X≤100%, 0%≤Y<50%;

[0102] The number of vertical insertion layers ranges from 14.

[0103] In this embodiment, specifically: multiple vertical insertion layers utilize periodic wide and narrow band gaps to redirect screw dislocations along the growth direction at the interface while maintaining a certain buffer zone, and multiple vertical insertions help to ensure that most defects are buried, thereby filtering out most defects while maintaining growth uniformity and consistency.

[0104] In this embodiment, specifically: the impurity control layer 3 is used to absorb and fix impurity atoms, thereby reducing their influence on the channel layer 2 and the barrier layer 1. The impurity control layer 3 is a composite compensatory doping structure, the compensatory doping sources are C2H4 and Cp2Fe, and GaN:C or GaN:C+Fe is doped periodically.

[0105] In this embodiment, specifically: the total thickness of the impurity control layer 3 is 1800nm, and the thickness of a single period is 16nm;

[0106] Among them, the carbon doping concentration of the gallium nitride layer doped with the carbon layer is 2e19at / cm 3 ;

[0107] Among them, the gallium nitride layer is doped with carbon, and the carbon doping concentration in the iron layer is 7e18at / cm 3 , the iron doping concentration is 3e18at / cm 3 .

[0108] In this embodiment, specifically: periodic carbon doping can introduce P-type doping on the one hand, compensating for the n-type conductive characteristics of intrinsic gallium nitride;

[0109] And a specific concentration of iron doping is introduced periodically to form deep energy level traps, thereby capturing the remaining electrons and forming high-energy properties of the material while avoiding the introduction of excessive doping impurities.

[0110] In this embodiment, specifically: the nucleation layer 5 uses AlN as the nucleation layer, and is grown on the substrate 6 by MOCVD technology, thereby promoting the growth of subsequent AlGaN / GaN layers.

[0111] In this embodiment, specifically: the channel layer 2 is a high-quality intrinsic GaN layer grown, and a high-mobility electron channel is obtained by optimizing the growth conditions.

[0112] In this embodiment, specifically: the thickness of the channel layer 2 is 800 nm, and the optimized growth conditions are temperature, pressure and gas flow rate.

[0113] In this embodiment, specifically: the barrier layer 1 is a layer of AlGaN deposited on the channel layer 2, and the effective accumulation and high mobility of electrons are ensured by precisely controlling the Al content and growth parameters.

[0114] A method for manufacturing a silicon-based GaN-HEMT epitaxial structure, the manufacturing method comprising:

[0115] Providing a silicon substrate;

[0116] A GaN-HEMT epitaxial structure is formed on the silicon substrate by using a metal organic chemical vapor deposition process, including:

[0117] A nucleation layer, a defect filtering layer, an impurity regulating layer, a channel layer and a barrier layer are epitaxially grown in sequence from bottom to top on the silicon substrate.

[0118] Example 4

[0119] A silicon-based GaN-HEMT epitaxial structure includes a substrate 6, the substrate 6 is a silicon substrate, a nucleation layer 5 is epitaxially grown on the substrate 6, a defect filter layer 4 is epitaxially grown on the nucleation layer 5, an impurity regulation layer 3 is epitaxially grown on the defect filter layer 4, a channel layer 2 is epitaxially grown on the impurity regulation layer 3, and a barrier layer 1 is epitaxially grown on the channel layer 2;

[0120] The defect filtering layer 4 is a GaN layer deposited on the nucleation layer 5, wherein the GaN layer structure includes a plurality of vertical insertion layers, which are used as defect filtering to reduce defects transmitted from the nucleation layer 5 to subsequent layers;

[0121] Wherein, the vertical insertion layer is AlxGa1-xN or AlyGa1-yN, and the AlxGa1-xN or AlyGa1-yN in the vertical insertion layer is a well barrier structure, and the total thickness of the periodic structure is 280nm;

[0122] The single layer thickness is 18 nm, where 50%≤X≤100%, 0%≤Y<50%;

[0123] The number of vertical insertion layers ranges from 18.

[0124] In this embodiment, specifically: multiple vertical insertion layers utilize periodic wide and narrow band gaps to redirect screw dislocations along the growth direction at the interface while maintaining a certain buffer zone, and multiple vertical insertions help to ensure that most defects are buried, thereby filtering out most defects while maintaining growth uniformity and consistency.

[0125] In this embodiment, specifically: the impurity control layer 3 is used to absorb and fix impurity atoms, thereby reducing their influence on the channel layer 2 and the barrier layer 1. The impurity control layer 3 is a composite compensatory doping structure, the compensatory doping sources are C2H4 and Cp2Fe, and GaN:C or GaN:C+Fe is doped periodically.

[0126] In this embodiment, specifically: the total thickness of the impurity control layer 3 is 2400nm, and the thickness of a single period is 18nm;

[0127] Among them, the carbon doping concentration of the gallium nitride layer doped with the carbon layer is 2e19at / cm 3 ;

[0128] Among them, the gallium nitride layer is doped with carbon, and the carbon doping concentration in the iron layer is 7e18at / cm 3 , the iron doping concentration is 3e18at / cm 3 .

[0129] In this embodiment, specifically: periodic carbon doping can introduce P-type doping on the one hand, compensating for the n-type conductive characteristics of intrinsic gallium nitride;

[0130] And a specific concentration of iron doping is introduced periodically to form deep energy level traps, thereby capturing the remaining electrons and forming high-energy properties of the material while avoiding the introduction of excessive doping impurities.

[0131] In this embodiment, specifically: the nucleation layer 5 uses AlN as the nucleation layer, and is grown on the substrate 6 by MOCVD technology, thereby promoting the growth of subsequent AlGaN / GaN layers.

[0132] In this embodiment, specifically: the channel layer 2 is a high-quality intrinsic GaN layer grown, and a high-mobility electron channel is obtained by optimizing the growth conditions.

[0133] In this embodiment, specifically: the thickness of the channel layer 2 is 1000 nm, and the optimized growth conditions are temperature, pressure and gas flow rate.

[0134] In this embodiment, specifically: the barrier layer 1 is a layer of AlGaN deposited on the channel layer 2, and the effective accumulation and high mobility of electrons are ensured by precisely controlling the Al content and growth parameters.

[0135] A method for manufacturing a silicon-based GaN-HEMT epitaxial structure, the manufacturing method comprising:

[0136] Providing a silicon substrate;

[0137] A GaN-HEMT epitaxial structure is formed on the silicon substrate by using a metal organic chemical vapor deposition process, including:

[0138] A nucleation layer, a defect filtering layer, an impurity regulating layer, a channel layer and a barrier layer are epitaxially grown in sequence from bottom to top on the silicon substrate.

[0139] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A silicon-based GaN-HEMT epitaxial structure, comprising a substrate (6), wherein the substrate (6) is a silicon substrate, characterized in that: A nucleation layer (5) is epitaxially grown on the substrate (6), a defective filter layer (4) is epitaxially grown on the nucleation layer (5), an impurity control layer (3) is epitaxially grown on the defective filter layer (4), a channel layer (2) is epitaxially grown on the impurity control layer (3), and a barrier layer (1) is epitaxially grown on the channel layer (2); The defect filtering layer (4) is a GaN layer deposited on the nucleation layer (5), wherein the GaN layer structure includes a plurality of vertical insertion layers, which are used as defect filtering to reduce defects transmitted from the nucleation layer (5) to subsequent layers; Wherein, the vertical insertion layer is AlxGa1-xN or AlyGa1-yN, and the AlxGa1-xN or AlyGa1-yN in the vertical insertion layer is a well barrier structure, and the total thickness of the periodic structure is 200nm-300nm; The single layer thickness is 10nm-20nm, wherein 50%≤X≤100%, 0%≤Y<50%; The number of vertical insertion layers ranges from 5 to 20.

2. The silicon-based GaN-HEMT epitaxial structure according to claim 1, characterized in that: The impurity regulation layer (3) is used to absorb and fix impurity atoms, thereby reducing their influence on the channel layer (2) and the barrier layer (1); the impurity regulation layer (3) is a composite compensation doping structure, the compensation doping sources are C2H4 and Cp2Fe, and GaN:C or GaN:C+Fe is doped periodically.

3. The silicon-based GaN-HEMT epitaxial structure according to claim 2, characterized in that: The total thickness of the impurity control layer (3) is 500nm-2500nm, and the thickness of a single period is 10nm-20nm; Among them, the carbon doping concentration of the gallium nitride layer doped with the carbon layer is 8e18-2e19at / cm 3 ; Among them, the gallium nitride layer is doped with carbon, and the carbon doping concentration in the iron layer is 5e18-7e18at / cm 3 , the iron doping concentration is 1e18-3e18at / cm 3 .

4. The silicon-based GaN-HEMT epitaxial structure according to claim 3, characterized in that: On the one hand, periodic carbon doping can introduce P-type doping to compensate for the n-type conductivity of intrinsic GaN; And a specific concentration of iron doping is introduced periodically to form deep energy level traps, thereby capturing the remaining electrons and forming high-energy properties of the material while avoiding the introduction of excessive doping impurities.

5. The silicon-based GaN-HEMT epitaxial structure according to claim 1, characterized in that: The nucleation layer (5) uses AlN as the nucleation layer and is grown on a substrate (6) by MOCVD technology, thereby promoting the growth of subsequent AlGaN / GaN layers.

6. The silicon-based GaN-HEMT epitaxial structure according to claim 1, characterized in that: The channel layer (2) is a high-quality intrinsic GaN layer grown, and an electron channel with high mobility is obtained by optimizing the growth conditions.

7. The silicon-based GaN-HEMT epitaxial structure according to claim 6, characterized in that: The thickness of the channel layer (2) is 200nm-1000nm, and the optimized growth conditions are temperature, pressure and gas flow rate.

8. The silicon-based GaN-HEMT epitaxial structure according to claim 1, characterized in that: The barrier layer (1) is a layer of AlGaN deposited on the channel layer (2), and the effective accumulation and high mobility of electrons are ensured by precisely controlling the Al content and growth parameters.

9. A method for manufacturing a silicon-based GaN-HEMT epitaxial structure, characterized in that: The production method includes: Providing a silicon substrate; A GaN-HEMT epitaxial structure is formed on the silicon substrate by using a metal organic chemical vapor deposition process, including: A nucleation layer, a defect filtering layer, an impurity regulating layer, a channel layer and a barrier layer are epitaxially grown in sequence from bottom to top on the silicon substrate.

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