Surface pretreatment device for silicon wafer texturing and application method thereof
By designing a surface pretreatment device for silicon wafer wool making and cleaning the surface of the silicon wafer using high-energy physical devices, the problems of long surface treatment time, high energy consumption and easy damage in the prior art are solved, and efficient and environmentally friendly silicon wafer surface pretreatment is achieved, improving the quality and production efficiency of wool making.
Patent Information
- Application Number
- CN202411924197.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2025-03-28
AI Technical Summary
The existing silicon wafer surface treatment methods have the disadvantages of long processing time, high energy consumption, and easy to cause silicon wafer damage. Especially in the single-sided velvet making process of silicon wafers, it is difficult to ensure the protection of the back poly surface and the uniformity of the front suede, which affects the conversion efficiency and yield of the photovoltaic cell.
A surface pretreatment device for wool making of silicon wafers is designed, including a transmission device and a surface pretreatment device, which is equipped with high-energy physical devices, such as laser emission ports and linear plasma generators, for cleaning the surface of silicon wafers, replacing traditional chemical treatment methods.
This device can effectively remove contaminants on the surface of the silicon wafer, improve the velvet density during velvet making, reduce the difference in velvet output of diamond wire marks, reduce production costs, and the process has no sewage discharge, comply with the requirements of green and environmental protection, and improve the surface quality and production efficiency of the silicon wafer.
Smart Images
Figure CN119730460A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of silicon wafer surface pretreatment, and in particular to a surface pretreatment device for silicon wafer texturing and an application method thereof. Background Art
[0002] In the modern semiconductor manufacturing industry, silicon wafers are the basic materials of integrated circuits, and their surface quality directly affects the yield and performance of subsequent processes. Therefore, it is particularly important to perform fine surface pretreatment on silicon wafers, especially texturing. In the existing process of preparing TBC solar cells, silicon wafers need to be processed. However, in the process of single-sided texturing of silicon wafers, while texturing the front side, it is necessary to ensure the protection of the poly surface on the back and corrosion of the gap area. If the poly surface is not protected enough and the uniformity of the front texturing is not good, it will seriously affect the conversion efficiency and yield of photovoltaic cells. Therefore, the development of an efficient and precise surface pretreatment device and method for silicon wafer texturing to replace the current mixed acid corrosion treatment process has become a technical problem that needs to be solved urgently in the industry.
[0003] With regard to the above-mentioned related technologies, the inventor believes that traditional silicon wafer surface treatment methods usually rely on chemical cleaning methods. Although these methods can achieve cleaning effects to a certain extent, they are often unable to remove pollutants and defects uniformly and thoroughly. In addition, these methods also have many disadvantages such as long processing time, high energy consumption, and easy to cause silicon wafer damage. Summary of the invention
[0004] In order to improve the defects of existing silicon wafer surface treatment methods such as long treatment time, high energy consumption, and easy damage to silicon wafers, the present application provides a surface pretreatment device for silicon wafer texturing and an application method thereof.
[0005] In the first aspect, the present application provides a surface pretreatment device for silicon wafer texturing using the following technical solution:
[0006] A surface pretreatment device for silicon wafer texturing, comprising:
[0007] A transmission device, wherein the transmission device is provided with a conveyor belt extending along its length direction so that the silicon wafers to be pretreated can be transferred from one end of the transmission device to the other end;
[0008] The surface pretreatment device is arranged above the transmission device, and the surface pretreatment device is provided with a high-energy physical device for performing surface cleaning treatment on the silicon wafer that needs to be pretreated.
[0009] By adopting the above technical scheme, the present application sets up a transmission device and a surface pretreatment device as the main components of the surface pretreatment device for silicon wafer texturing, wherein the transmission device is used to transport the silicon wafer and ensure that the silicon wafer can pass through the pretreatment area smoothly. The surface pretreatment device is located above the transmission device and is equipped with a high-energy physics device for cleaning the surface of the silicon wafer. The high-energy physics device may include various types of light sources, such as ultraviolet light, laser or other types of radiation sources, for removing pollutants on the surface of the silicon wafer, such as organic matter, particulates or metal particles. The silicon wafer with dirty surface is pretreated by the above-mentioned pretreatment device. Compared with the traditional chemical treatment scheme, the pretreatment device of the present application does not need to use hydrogen peroxide and alkali as pretreatment liquid, which reduces the production cost, and the pretreatment process has no sewage discharge, which meets the requirements of green environmental protection.
[0010] Based on the above scheme, this application does not need to use HF / HNO when producing BC batteries. 3 / H 2 SO 4 The mixed acid system corrodes the surface of the silicon wafer, effectively reducing the comprehensive acid consumption and production costs. The pretreatment process for the surface of the silicon wafer can not only replace the pretreatment process of hydrogen peroxide and alkali, but also increase the density of the wool during the wool making process and reduce the difference in the wool of the diamond wire marks.
[0011] Furthermore, the high energy physics device comprises a plurality of laser emission ports, and the plurality of laser emission ports are arranged above the traditional device.
[0012] By adopting the above technical solution, the present application sets up multiple laser emission ports to pre-treat the dirt on the silicon wafer surface. At the same time, the number and layout of these laser emission ports are designed to cover a large area above the transmission device to ensure that the entire surface of multiple silicon wafers or a single large silicon wafer is effectively treated at the same time. The use of laser emission ports can provide high-precision and high-energy density cleaning, which is crucial to ensure that the silicon wafer surface reaches the cleanliness and smoothness required for texturing.
[0013] Furthermore, the laser range irradiated by the multiple laser emission ports is not less than the surface area of each silicon wafer that needs to be preprocessed.
[0014] By adopting the above technical solution, the present application further limits the irradiation range of the laser emission port to be at least equal to the surface area of a single silicon wafer. Such a design can ensure that the entire silicon wafer surface is evenly exposed to the laser, thereby achieving a comprehensive cleaning effect. It avoids local contamination of the silicon wafer caused by uneven irradiation and ensures the consistency of the overall quality of the silicon wafer.
[0015] Furthermore, the high energy physics device comprises a linear plasma generating device, which is arranged above the transmission device and can emit linear plasma perpendicular to the movement direction of the transmission device.
[0016] By adopting the above technical solution, the present application can also set a linear plasma as one of the pretreatment means. Plasma has strong chemical activity and can effectively remove organic and inorganic pollution on the surface of the silicon wafer, while causing less damage to the silicon wafer substrate. The linear plasma generated by this device is perpendicular to the movement direction of the transmission device, ensuring that the entire surface of the silicon wafer can be covered and processed by the plasma during the movement of the silicon wafer.
[0017] Furthermore, the length of the linear plasma emitted by the linear plasma generating device is not less than the width of the silicon wafer to be preprocessed.
[0018] By adopting the above technical solution, the present application further stipulates that the length of the plasma emitted by the linear plasma generator should be at least equal to the width of the silicon wafer to be processed. This design is to ensure that a uniform plasma treatment effect can be obtained across the entire width of the silicon wafer, avoiding silicon wafer quality problems caused by uneven treatment.
[0019] Furthermore, the surface pretreatment device for silicon wafer texturing also includes:
[0020] The sensing device is arranged at one side of the surface pretreatment device and performs sensing monitoring on the bottom of the surface pretreatment device. The sensing device is connected to the surface pretreatment device by electrical signals to control the opening and closing of the surface pretreatment device.
[0021] By adopting the above technical solution, the present application further designs a sensing device and a recovery device. The sensing device is used to detect whether the silicon wafer has reached the pretreatment position and control the opening and closing of the pretreatment device to achieve automatic operation. The recovery device is used to store the pretreated silicon wafers, making the entire pretreatment process more complete and efficient. This design not only improves production efficiency, but also reduces the labor intensity of operators.
[0022] In the second aspect, the present application provides a surface pretreatment method for silicon wafer texturing, which adopts the following technical solution:
[0023] A surface pretreatment method for silicon wafer texturing includes the following processing steps:
[0024] Place the reworked silicon wafer with dirty surface on the conveyor belt of the transmission device with the dirty surface facing upward, and start the transmission device, surface pretreatment device and induction device;
[0025] After the sensing device receives the silicon wafer that needs to be pretreated from under the surface pretreatment device, it starts the surface pretreatment device and treats the surface of the silicon wafer that needs to be pretreated. After the sensing device senses that the surface pretreatment device has completed the surface treatment of the silicon wafer that needs to be pretreated, the surface pretreatment device is closed, and the transmission device then transmits the pretreated silicon wafer to the recovery device, thereby completing the surface pretreatment of the silicon wafer for texturing.
[0026] By adopting the above technical solution, the present application places the silicon wafers that need to be pretreated on the transmission device, starts the surface pretreatment device through the induction device for treatment, and then transfers the silicon wafers to the recycling device after the treatment is completed. The whole process has a high degree of automation and is easy to operate, which can effectively improve production efficiency and silicon wafer surface quality. At the same time, the pretreatment solution has a high degree of automation integration with the current production line, and is very effective in removing reworked wafers from the photovoltaic production line. It can ensure that fingerprints and other dirt are completely removed, and the production line yield is significantly improved.
[0027] Furthermore, the surface pretreatment device uses a high energy physics device to irradiate the laser with an intensity of 8.5-12.5 J / cm 2 .
[0028] Furthermore, the plasma generator used in the surface pretreatment device uses an oxygen-argon mixture mixed in a mass ratio of 1:99, and the linear processing power of the plasma generator is 1000W.
[0029] Furthermore, the transmission speed of the transmission device is 50-200 mm / s.
[0030] By adopting the above technical solution, the present application further optimizes the technical parameters of pretreatment, which can effectively ensure that the surface contamination of the silicon wafer is removed without causing thermal damage or other adverse effects on the silicon wafer. At the same time, by optimizing the transmission rate of the transmission device, it is ensured that the silicon wafer can obtain sufficient processing time in the pretreatment area while maintaining high production efficiency.
[0031] In summary, the present application includes at least one of the following beneficial technical effects:
[0032] 1. The present application sets up a transmission device and a surface pretreatment device as the main components of the surface pretreatment device for silicon wafer texturing, wherein the transmission device is used to transport the silicon wafer and ensure that the silicon wafer can pass through the pretreatment area smoothly. The surface pretreatment device is located above the transmission device and is equipped with a high-energy physics device for cleaning the surface of the silicon wafer. The high-energy physics device may include various types of light sources, such as ultraviolet light, lasers or other types of radiation sources, for removing pollutants on the surface of the silicon wafer, such as organic matter, particulates or metal particles. The silicon wafer with dirty surface is pretreated by the above-mentioned pretreatment device. Compared with the traditional chemical treatment scheme, the pretreatment device of the present application does not need to use hydrogen peroxide and alkali as pretreatment liquid, which reduces the production cost, and the pretreatment process has no sewage discharge, which meets the requirements of green environmental protection;
[0033] 2. This application sets up multiple laser emission ports to pre-treat the dirt on the silicon wafer surface. At the same time, the number and layout of these laser emission ports are designed to cover a large area above the transmission device to ensure that the entire surface of multiple silicon wafers or a single large silicon wafer is effectively treated at the same time. The use of laser emission ports can provide high-precision and high-energy density cleaning, which is crucial to ensure that the silicon wafer surface reaches the cleanliness and smoothness required for texturing;
[0034] 3. The present application further designs a sensing device and a recycling device. The sensing device is used to detect whether the silicon wafer has reached the pretreatment position and control the opening and closing of the pretreatment device to achieve automatic operation. The recycling device is used to store the pretreated silicon wafers, making the entire pretreatment process more complete and efficient. This design not only improves production efficiency, but also reduces the labor intensity of operators;
[0035] 4. This application places the silicon wafers that need to be pretreated on the transmission device, starts the surface pretreatment device through the induction device for treatment, and then transfers the silicon wafers to the recycling device after the treatment is completed. The whole process is highly automated and easy to operate, which can effectively improve production efficiency and silicon wafer surface quality. At the same time, the pretreatment solution has a high degree of automation integration with the current production line, and is very effective in removing reworked wafers from the photovoltaic production line. It can ensure that fingerprints and other dirt are completely removed, and the production line yield is significantly improved. BRIEF DESCRIPTION OF THE DRAWINGS
[0036] Figure 1 It is a schematic diagram of the overall structure of a surface pretreatment device for silicon wafer texturing in Example 1 of the present application.
[0037] Figure 2 It is a schematic diagram of the overall structure of a surface pretreatment device for silicon wafer texturing in Example 2 of the present application.
[0038] Figure 3This is an electron microscope image of the textured surface structure of a silicon wafer pretreated by a surface pretreatment device for texturing a silicon wafer in Example 1 of the present application and then texturing the silicon wafer.
[0039] Explanation of the accompanying drawings: 1. Transmission device; 11. Conveyor belt; 2. Surface pretreatment device; 21. Laser emission port; 22. Linear plasma generating device; 3. Induction device. DETAILED DESCRIPTION
[0040] The following is combined with Figure 1-2 This application is described in further detail.
[0041] Example 1
[0042] The present application embodiment discloses a surface pretreatment device for silicon wafer texturing. Figure 1 A surface pretreatment device for texturing silicon wafers includes a transmission device 1, which is provided with a conveyor belt 11. The conveyor belt 11 conveys the silicon wafers with dirty surfaces that need to be pretreated from left to right along its length direction; wherein the conveying speed of the conveyor belt 11 is 50-200mm / s. A surface pretreatment device 2 is provided above the conveyor belt 11. The surface pretreatment device 2 is a high-energy physics device. The high-energy physics device is arranged directly above the conveyor belt 11 and has a plurality of spaced laser emission ports 21 at its lower end. The plurality of spaced laser emission ports 21 can emit 8.5-12.5J / cm downward. 2 The range of the laser emitted by the multiple laser emission ports 21 is not less than the surface area of each silicon wafer that needs to be pretreated, and the laser emitted by the laser emission port 21 can effectively pretreat the surface of the silicon wafer with a dirty surface.
[0043] At the same time, a sensing device 3 is provided on one side of the high-energy physics device close to the starting point of the conveyor belt 11. The sensing device 3 monitors the position of the silicon wafer on the surface of the conveyor belt 11 and is electrically connected to the high-energy physics device. When the sensing device 3 detects that the silicon wafer enters the pretreatment range of the high-energy physics device, the high-energy physics device starts and emits a laser to process the surface of the silicon wafer. When the sensing device 3 detects that the silicon wafer leaves the pretreatment range of the high-energy physics device, the high-energy physics device stops emitting a laser to complete the surface pretreatment step for the silicon wafer.
[0044] Example 2
[0045] The present application embodiment discloses a surface pretreatment device for silicon wafer texturing. Figure 1A surface pretreatment device for texturing silicon wafers includes a transmission device 1, which is provided with a conveyor belt 11. The conveyor belt 11 conveys the silicon wafers with dirty surfaces that need to be pretreated from left to right along its length direction; wherein the conveying speed of the conveyor belt 11 is 50-200mm / s. A surface pretreatment device 2 is provided above the conveyor belt 11. The surface pretreatment device 2 is a linear plasma generator 22. The linear plasma generator 22 is arranged directly above the conveyor belt 11 and has a generating port at its lower end that can emit linear plasma perpendicular to the moving direction of the transmission device 1. The linear plasma generator 22 uses an oxygen-argon mixture mixed at a mass ratio of 1:99. The linear processing power of the plasma generator is 1000W. The linear plasma emitted through the emission port can effectively pretreat the surface of the silicon wafer with dirty surfaces.
[0046] At the same time, a sensing device 3 is provided on one side of the linear plasma generator 22 close to the starting point of the conveyor belt 11. The sensing device 3 monitors the position of the silicon wafer on the surface of the conveyor belt 11 and is connected to the electrical signal of the high-energy physics device. When the sensing device 3 detects that the silicon wafer enters the pretreatment range of the linear plasma generator 22, the linear plasma generator 22 starts and emits linear plasma to treat the surface of the silicon wafer. When the sensing device 3 detects that the silicon wafer leaves the pretreatment range of the linear plasma generator 22, the linear plasma generator 22 stops emitting linear plasma to complete the surface pretreatment step for texturing the silicon wafer.
[0047] The above are all preferred embodiments of the present application, and the protection scope of the present application is not limited thereto. Therefore, any equivalent changes made according to the structure, shape, and principle of the present application should be included in the protection scope of the present application.
Claims
1. A surface pretreatment device for silicon wafer texturing, characterized in that: include: A transmission device (1), wherein the transmission device (1) is provided with a conveyor belt (11) extending along its length direction so that silicon wafers to be pre-processed can be transferred from one end of the transmission device (1) to the other end; A surface pretreatment device (2) is provided above the transmission device (1), and the surface pretreatment device (2) is provided with a high-energy physical device for performing surface cleaning treatment on silicon wafers that need to be pretreated.
2. A surface pretreatment device for silicon wafer texturing according to claim 1, characterized in that: The high energy physics device comprises a plurality of laser emission ports (21), and the plurality of laser emission ports (21) are arranged above the conventional device.
3. A surface pretreatment device for silicon wafer texturing according to claim 2, characterized in that: The laser range irradiated by the multiple laser emission ports (21) is not less than the surface area of each silicon wafer that needs to be preprocessed.
4. The surface pretreatment device for silicon wafer texturing according to claim 1, characterized in that: The high energy physics device comprises a linear plasma generating device (22), which is arranged above the transmission device (1) and can emit linear plasma perpendicular to the movement direction of the transmission device (1).
5. A surface pretreatment device for silicon wafer texturing according to claim 4, characterized in that: The length of the linear plasma emitted by the linear plasma generating device (22) is not less than the width of the silicon wafer to be pre-processed.
6. The surface pretreatment device for silicon wafer texturing according to claim 1, characterized in that: Also includes: A sensing device (3), the sensing device (3) is arranged on one side of the surface pretreatment device (2) and performs sensing monitoring on the bottom of the surface pretreatment device (2), and the sensing device (3) is connected to the surface pretreatment device (2) via an electrical signal to control the opening and closing of the surface pretreatment device (2).
7. A surface pretreatment method for silicon wafer texturing, characterized in that: The surface pretreatment device for silicon wafer texturing according to any one of claims 1 to 6 comprises the following processing steps: Place the reworked silicon wafer with dirty surface on the conveyor belt of the transmission device with the dirty surface facing upward, and start the transmission device, the surface pretreatment device and the induction device; After the sensing device receives the silicon wafer that needs to be pretreated from under the surface pretreatment device, it starts the surface pretreatment device and treats the surface of the silicon wafer that needs to be pretreated. After the sensing device senses that the surface pretreatment device has completed the surface treatment of the silicon wafer that needs to be pretreated, the surface pretreatment device is closed, and the transmission device then transmits the pretreated silicon wafer to the recovery device, thereby completing the surface pretreatment of the silicon wafer for texturing.
8. A surface pretreatment method for silicon wafer texturing according to claim 7, characterized in that: The surface pretreatment device uses a high energy physics device to irradiate the laser with an intensity of 8.5-12.5 J / cm 2 .
9. A surface pretreatment method for silicon wafer texturing according to claim 7, characterized in that: The plasma generator used in the surface pretreatment device uses an oxygen-argon mixture mixed in a mass ratio of 1:99, and the linear processing power of the plasma generator is 1000W.
10. A surface pretreatment method for silicon wafer texturing according to claim 7, characterized in that: The transmission speed of the transmission device is 50-200 mm / s.