Light emitting diode structure and preparation method thereof

Abstract

The invention relates to a light emitting diode structure and a preparation method thereof. The light-emitting diode structure comprises a driving substrate, a light-emitting diode, a thermoelectric refrigeration device and an encapsulation layer. The light-emitting diode comprises a plurality of light-emitting units which are arranged on the driving substrate at intervals; the thermoelectric refrigeration device comprises a heat conduction cold end, a first heat conduction hot end, a second heat conduction hot end, a P-type semiconductor layer and an N-type semiconductor layer. The heat conduction cold ends are at least arranged in the intervals of at least part of the light emitting units; the P-type semiconductor layer and the N-type semiconductor layer are arranged between the heat conduction cold end and the driving substrate at an interval and are respectively in contact with the heat conduction cold end; the first heat conduction hot end and the second heat conduction hot end are arranged on the driving substrate in a spaced mode and located on the outer side of the light-emitting diode, the P-type semiconductor layer is connected with the first heat conduction hot end, and the N-type semiconductor layer is connected with the second heat conduction hot end; the encapsulating layer encapsulates the light emitting diode and the thermoelectric refrigeration device.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a light emitting diode structure and a method for preparing the same. Background Art

[0002] Micro-LED is a new generation of display technology. Currently, Micro-LED faces the problem of poor heat dissipation. Compared with ordinary LED devices, Micro-LED has smaller pixel size and higher density, which leads to high heat density and difficulty in dissipation, making the device temperature too high and reducing its lifespan. Some related technologies use thermoelectric cooling devices to dissipate heat from LEDs, but conventional thermoelectric cooling devices are not suitable for Micro-LEDs with micron-level pixel sizes. Summary of the invention

[0003] In order to solve the above technical problems, the present application provides a light emitting diode structure, comprising:

[0004] Driver substrate;

[0005] A light emitting diode, the light emitting diode comprising a plurality of light emitting units spaced apart on the driving substrate;

[0006] A thermoelectric refrigeration device, the thermoelectric refrigeration device comprising a heat-conducting cold end, a first heat-conducting hot end, a second heat-conducting hot end, a P-type semiconductor layer and an N-type semiconductor layer; wherein the heat-conducting cold end is at least arranged in the interval of at least part of the light-emitting unit; the P-type semiconductor layer and the N-type semiconductor layer are arranged between the heat-conducting cold end and the driving substrate, and are respectively in contact with the heat-conducting cold end; the first heat-conducting hot end and the second heat-conducting hot end are arranged on the driving substrate and are located outside the light-emitting diode, and the P-type semiconductor layer is connected to the first heat-conducting hot end, and the N-type semiconductor layer is connected to the second heat-conducting hot end;

[0007] An encapsulation layer encapsulates the light emitting diode and the thermoelectric cooling device.

[0008] In some embodiments, the P-type semiconductor layer includes a plurality of P-type semiconductor layer units, the N-type semiconductor layer includes a plurality of N-type semiconductor layer units, and the plurality of P-type semiconductor layer units and the plurality of N-type semiconductor layer units are arranged alternately in the first direction.

[0009] In some embodiments, the first heat-conducting end and the second heat-conducting end are arranged on two sides of the light-emitting diode in a second direction relative to each other; and the second direction forms a non-zero angle with the first direction.

[0010] In some embodiments, the P-type semiconductor layer covers a surface of the first heat-conducting end close to the light-emitting diode, or the P-type semiconductor layer covers a surface of the first heat-conducting end close to the light-emitting diode and a surface of the first heat-conducting end away from the driving substrate;

[0011] The N-type semiconductor layer covers the surface of the second heat conductive end close to the light emitting diode, or the N-type semiconductor layer covers the surface of the second heat conductive end close to the light emitting diode and the surface of the second heat conductive end away from the driving substrate.

[0012] In some embodiments, the light-emitting unit includes a light-emitting layer and a bonding layer for fixing the light-emitting layer to the driving substrate; the thickness of the N-type semiconductor layer is consistent with the thickness of the bonding layer, and the thickness of the P-type semiconductor layer is consistent with the thickness of the bonding layer.

[0013] In some embodiments, part of the encapsulation layer is filled between the P-type semiconductor layer and the N-type semiconductor layer; and / or,

[0014] The sidewalls of the light emitting diode are provided with a passivation layer; and / or,

[0015] The orthographic projection of the heat-conducting cold end on the driving substrate along the thickness direction of the light-emitting diode does not overlap with the orthographic projections of the first heat-conducting hot end and the second heat-conducting hot end on the driving substrate along the thickness direction of the light-emitting diode.

[0016] In some embodiments, the heat-conducting cold end covers the periphery of each of the light-emitting units;

[0017] The heat-conducting cold end is a light-shielding material layer, and the material of the heat-conducting cold end is gold, aluminum, copper or silver;

[0018] The hot end material is aluminum, copper, silver, molybdenum or silicon carbide.

[0019] In some embodiments, a conductive layer is further provided on a side of the plurality of light-emitting units away from the driving substrate, the light-emitting units include a light-emitting layer and a bonding layer for fixing the light-emitting layer to the driving substrate, and the driving substrate includes a light-emitting driving circuit connected to the conductive layer and the bonding layer;

[0020] The driving substrate further includes a heat dissipation circuit, which is used to be connected to the first heat-conducting hot end and the second heat-conducting hot end to provide an electrical signal to the thermoelectric cooling device.

[0021] The present application further provides a method for preparing a light emitting diode structure, which comprises:

[0022] Providing a drive substrate;

[0023] A light emitting diode and a thermoelectric cooling device are formed on a driving substrate; wherein the light emitting diode comprises a plurality of light emitting units spaced apart on the driving substrate; the thermoelectric cooling device comprises a heat conductive cold end, a first heat conductive hot end, a second heat conductive hot end, a P-type semiconductor layer and an N-type semiconductor layer; wherein the heat conductive cold end is at least arranged in the interval between at least part of the light emitting units; the P-type semiconductor layer and the N-type semiconductor layer are spaced apart between the heat conductive cold end and the driving substrate, and are in contact with the heat conductive cold end respectively; the first heat conductive hot end and the second heat conductive hot end are spaced apart on the driving substrate and are located outside the light emitting diode, and the P-type semiconductor layer is connected to the first heat conductive hot end, and the N-type semiconductor layer is connected to the second heat conductive hot end;

[0024] An encapsulation layer is formed, wherein the encapsulation layer encapsulates the light emitting diode and the thermoelectric cooling device.

[0025] In some embodiments, forming a light emitting diode and a thermoelectric cooling device on a driving substrate includes:

[0026] Providing a light-emitting layer wafer, and bonding the light-emitting layer wafer to the driving substrate via a bonding layer;

[0027] Etching the light-emitting layer wafer to form a plurality of spaced light-emitting units;

[0028] Forming the first heat-conducting end and the second heat-conducting end outside the light-emitting diode;

[0029] The P-type semiconductor layer and the N-type semiconductor layer are formed respectively; the P-type semiconductor layer covers at least a portion of the first heat-conducting end; the N-type semiconductor layer covers at least a portion of the second heat-conducting end;

[0030] The heat-conducting cold end is formed.

[0031] In some embodiments, after etching the light-emitting layer wafer to form a plurality of spaced light-emitting units and before forming the first heat-conducting end and the second heat-conducting end outside the light-emitting diode, the method further includes:

[0032] A passivation layer is formed on the sidewall of the light emitting unit.

[0033] In some embodiments, after forming the thermally conductive cold end, the method includes:

[0034] forming a first encapsulation layer, wherein the first encapsulation layer encapsulates the heat-conducting cold end, the first heat-conducting hot end, the second heat-conducting hot end and the side of the light-emitting unit, and the side of the light-emitting unit facing away from the driving substrate is exposed;

[0035] Disposing a conductive layer on a side of the light emitting layer away from the driving substrate;

[0036] A second encapsulation layer is formed, wherein the second encapsulation layer covers the first encapsulation layer and the conductive layer; the first encapsulation layer and the second encapsulation layer form the encapsulation layer.

[0037] The technical solution provided by the embodiments of the present application may have the following beneficial effects:

[0038] It can be seen from the above embodiments that the light-emitting diode structure and the preparation method thereof in the present application integrate the thermoelectric cooling device and the light-emitting diode on the same driving substrate, the heat-conducting cold end of the thermoelectric cooling device is arranged in the interval of the light-emitting unit of the light-emitting diode, and the heat-conducting hot end of the thermoelectric cooling device is arranged outside the light-emitting diode, so as to facilitate the introduction of the heat of the light-emitting diode to the outside of the light-emitting area for dissipation, increase the contact area between the heat-conducting cold end and the heat source to improve the heat dissipation efficiency, and at the same time, it is beneficial to control the size of the structure in the thickness direction while dissipating the heat, thereby improving the space utilization rate.

[0039] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0041] Figure 1 A partial top view of a light emitting diode structure provided in one embodiment of the present application;

[0042] Figure 2 is a cross-sectional view of a light emitting diode structure provided in an embodiment of the present application; wherein the cross-sectional view is taken along a similar Figure 1 The section line A-A' shown is obtained;

[0043] Figure 3 is a cross-sectional view of a method for preparing a light-emitting diode structure provided in an embodiment of the present application; wherein the cross-sectional view is taken along a similar Figure 1 The section line B-B' shown is obtained;

[0044] Figure 4 A method flow chart of a method for preparing a light-emitting diode structure provided in an embodiment of the present application;

[0045] Figures 5 to 12The present invention provides a structural diagram corresponding to different steps of preparing a light-emitting diode structure using a method for preparing a light-emitting diode structure provided in an embodiment of the present application. DETAILED DESCRIPTION

[0046] Here, the technical solutions in the embodiments (or "implementations") of the present application will be described clearly and completely in conjunction with the accompanying drawings. When the following description refers to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0047] If there are terms involving directional indications or positional relationships in the embodiments of the present application (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationship, movement, etc. between the components in a certain specific posture; if the specific posture changes, the directional indication or positional relationship will also change accordingly. In addition, the terms "first", "second", etc. involved in the embodiments of the present application are only used for the purpose of convenience of description and cannot be understood as indicating or implying relative importance.

[0048] The following is combined with Figures 1 to 12 , some embodiments of the light emitting diode structure and the manufacturing method thereof of the present application are described in detail. In the absence of conflict, the features of the following embodiments can be combined with each other.

[0049] Please refer to Figure 1 , and when necessary, combine Figure 2 and Figure 3 As shown, the application provides a light emitting diode structure 100 , which includes a driving substrate 10 , a light emitting diode 20 , a thermoelectric cooling device 30 and an encapsulation layer 40 .

[0050] The light emitting diode 20 includes a plurality of light emitting units 201 disposed on the driving substrate 10 at intervals.

[0051] The thermoelectric cooling device 30 includes a heat-conducting cold end 35, a first heat-conducting hot end 31, a second heat-conducting hot end 32, a P-type semiconductor layer 33 and an N-type semiconductor layer 34. The heat-conducting cold end 35 is at least arranged in the interval of at least part of the light-emitting unit 201; the P-type semiconductor layer 33 and the N-type semiconductor layer 34 are arranged between the heat-conducting cold end 35 and the driving substrate 10, and are in contact with the heat-conducting cold end 35 respectively; the first heat-conducting hot end 31 and the second heat-conducting hot end 32 are arranged on the driving substrate 10, and are located outside the light-emitting diode 20, and the P-type semiconductor layer 33 is connected to the first heat-conducting hot end 31, and the N-type semiconductor layer 34 is connected to the second heat-conducting hot end 32.

[0052] The encapsulation layer 40 encapsulates the light emitting diode 20 and the thermoelectric cooling device 30 .

[0053] The above-mentioned light-emitting diode structure integrates the thermoelectric cooling device and the light-emitting diode on the same driving substrate. The heat-conducting cold end of the thermoelectric cooling device is arranged in the interval of the light-emitting unit of the light-emitting diode, and the heat-conducting hot end of the thermoelectric cooling device is arranged outside the light-emitting diode, which is convenient for introducing the heat of the light-emitting diode to the outside of the light-emitting area for dissipation, increasing the contact area between the heat-conducting cold end and the heat source to improve the heat dissipation efficiency, and at the same time, it is beneficial to control the size of the structure in the thickness direction, thereby improving space utilization.

[0054] It should be noted that the LED structure 100 has a light emitting region where the LED 20 is disposed and a peripheral region located outside the light emitting region. Accordingly, the first heat conducting end 31 and the second heat conducting end 32 are disposed in the peripheral region.

[0055] In some embodiments, the heat-conducting cold end 35 is a light-shielding material layer and has electrical conductivity. The material of the heat-conducting cold end 35 can be gold (Au), aluminum (Al), copper (Cu) or silver (Ag).

[0056] In some embodiments, the hot end material is aluminum, copper, silver, molybdenum or silicon carbide.

[0057] The semiconductor material in the present application may be bismuth telluride, bismuth selenide, etc. In some embodiments, the material of the P-type semiconductor layer may be bismuth telluride doped with antimony, and the material of the N-type semiconductor layer may be bismuth telluride doped with selenium.

[0058] In some embodiments, the P-type semiconductor layer 33 includes multiple P-type semiconductor layer 33 units, and the N-type semiconductor layer 34 includes multiple N-type semiconductor layer 34 units. The multiple P-type semiconductor layer 33 units and the multiple N-type semiconductor layer 34 units are arranged in a first direction L at intervals.

[0059] In some embodiments, the first heat-conducting end 31 and the second heat-conducting end 32 are arranged on two sides of the light-emitting diode 20 in a second direction W. The second direction W forms a non-zero angle with the first direction L.

[0060] In some embodiments, the first direction L and the second direction W form a right angle. Of course, in some other embodiments, the first direction L and the second direction W form other angles.

[0061] The P-type semiconductor layer 33 covers at least a portion of the first heat-conducting end 31 exposed from the driving substrate 10, so as to achieve the connection between the P-type semiconductor layer 33 and the first heat-conducting end 31. The N-type semiconductor layer 34 covers at least a portion of the second heat-conducting end 32 exposed from the driving substrate 10, so as to achieve the connection between the N-type semiconductor layer 34 and the second heat-conducting end 32.

[0062] Combination Figure 2 As shown, in some embodiments, the P-type semiconductor layer 33 covers at least a portion of a surface of the first heat conductive end 31 close to the light emitting diode 20 and a surface of the first heat conductive end 31 away from the driving substrate 10 .

[0063] In some other embodiments, the P-type semiconductor layer 33 may also cover the surface of the first heat-conducting end 31 close to the light-emitting diode 20 .

[0064] Combination Figure 3 As shown, in some embodiments, the N-type semiconductor layer 34 covers at least a portion of a surface of the second heat conductive end 32 close to the light emitting diode 20 and a surface of the second heat conductive end 32 away from the driving substrate 10 .

[0065] In some other embodiments, the N-type semiconductor layer 34 covers a surface of the second heat-conducting end 32 close to the light-emitting diode 20 .

[0066] In some embodiments, the light emitting unit 201 includes a light emitting layer and a bonding layer 21 for fixing the light emitting layer to the driving substrate 10. The thickness of the N-type semiconductor layer 34 is consistent with the thickness of the bonding layer 21, and the thickness of the P-type semiconductor layer 33 is consistent with the thickness of the bonding layer 21.

[0067] In some embodiments, a portion of the encapsulation layer 40 is filled between the P-type semiconductor layer 33 and the N-type semiconductor layer 34 .

[0068] In some embodiments, a passivation layer 50 is disposed on the sidewall of the light emitting diode 20. The passivation layer 50 may be made of silicon oxide or other materials.

[0069] In some embodiments, the orthographic projection of the heat-conducting cold end 35 on the driving substrate 10 along the thickness direction T of the light-emitting diode 20 does not overlap with the orthographic projection of the first heat-conducting hot end 31 and the second heat-conducting hot end 32 on the driving substrate 10 along the thickness direction T of the light-emitting diode 20 .

[0070] Combination Figure 2 and Figure 3In some embodiments, the heat-conducting cold end 35 covers the outer circumference of each of the light-emitting units 201 .

[0071] In some embodiments, a conductive layer 60 is further provided on the side of the plurality of light-emitting units 201 facing away from the driving substrate 10, and the light-emitting units 201 include a light-emitting layer 22 and a bonding layer 21 for fixing the light-emitting layer 22 to the driving substrate 10, and the driving substrate 10 includes a light-emitting driving circuit (not shown) connected to the conductive layer 60 and the bonding layer 21.

[0072] Combination Figure 2 As shown, the driving substrate 10 is provided with an electrical connection column 102 located below the light-emitting unit 201, which is used to electrically connect to the bonding layer 21 of the light-emitting unit 201. The driving substrate is also provided with a cathode and an anode electrode connected to the light-emitting driving circuit. The conductive layer 60 can be connected to the cathode of the light-emitting driving circuit through a connection circuit or a connection wiring arranged in the peripheral area. The bonding layer 21 of the light-emitting unit 201 can be connected to the anode of the light-emitting driving circuit through the electrical connection column 102.

[0073] The driving substrate 10 further includes a heat dissipation circuit (not shown) for connecting to the first heat-conducting end 31 and the second heat-conducting end 32 to provide an electrical signal to the thermoelectric cooling device 30. Figure 2 As shown, the driving substrate 10 is provided with electrical connection columns 101 and 103 , which are respectively used to connect the first heat-conducting end 31 and the second heat-conducting end 32 to the heat dissipation circuit to achieve heat dissipation of the thermoelectric cooling device 30 .

[0074] Based on the above description, when the thermoelectric cooling device 30 is working, the current provided by the heat dissipation circuit flows through the second heat-conducting hot end 32, the N-type semiconductor layer 34, the heat-conducting cold end 35, the P-type semiconductor layer 33 and the first heat-conducting hot end 31 in sequence to form a loop, and heat dissipation is achieved in the process.

[0075] It should be noted that, in the present application, each light-emitting unit 201 can be configured to emit light independently.

[0076] Please refer to Figure 4 As shown, the present application further provides a method for preparing a light emitting diode structure 100, which includes the following steps S110, S120 and S130:

[0077] In step S110, a driving substrate is provided;

[0078] In step S120, a light emitting diode and a thermoelectric cooling device are formed on a driving substrate; wherein the light emitting diode comprises a plurality of light emitting units spaced apart on the driving substrate; the thermoelectric cooling device comprises a heat conductive cold end, a first heat conductive hot end, a second heat conductive hot end, a P-type semiconductor layer and an N-type semiconductor layer; wherein the heat conductive cold end is at least disposed in the space between at least a portion of the light emitting units; the P-type semiconductor layer and the N-type semiconductor layer are spaced apart between the heat conductive cold end and the driving substrate, and are in contact with the heat conductive cold end respectively; the first heat conductive hot end and the second heat conductive hot end are spaced apart on the driving substrate and are located outside the light emitting diode, and the P-type semiconductor layer is connected to the first heat conductive hot end, and the N-type semiconductor layer is connected to the second heat conductive hot end;

[0079] In step S120 , an encapsulation layer is formed, wherein the encapsulation layer encapsulates the light emitting diode and the thermoelectric cooling device.

[0080] Combine the following Figures 5 to 12 , the preparation method of the above-mentioned light emitting diode structure 100 is described in detail.

[0081] like Figure 5 As shown, in step S110 , a driving substrate 10 is provided.

[0082] like Figures 5 to 10 As shown, in step S120, a light emitting diode 20 and a thermoelectric cooling device 30 are formed on the driving substrate 10; wherein the light emitting diode 20 includes a plurality of light emitting units 201 spaced apart on the driving substrate 10; the thermoelectric cooling device 30 includes a heat conductive cold end 35, a first heat conductive hot end 31, a second heat conductive hot end 32, a P-type semiconductor layer 33 and an N-type semiconductor layer 34; wherein the heat conductive cold end 35 is at least provided in the space between at least part of the light emitting units 201; the P-type semiconductor layer 33 and the N-type semiconductor layer 34 are spaced apart between the heat conductive cold end 35 and the driving substrate 10, and are in contact with the heat conductive cold end 35 respectively; the first heat conductive hot end 31 and the second heat conductive hot end 32 are spaced apart on the driving substrate 10, and are located outside the light emitting diode 20, and the P-type semiconductor layer 33 is connected to the first heat conductive hot end 31, and the N-type semiconductor layer 34 is connected to the second heat conductive hot end 32.

[0083] like Figures 5 to 10 As shown, in some embodiments, step S120 of forming the light emitting diode 20 and the thermoelectric cooling device 30 on the driving substrate 10 may be implemented by the following steps:

[0084] like Figure 5As shown, a light emitting layer wafer 200 is provided, and the light emitting layer wafer 200 is bonded to the driving substrate 10 via a bonding layer 210 .

[0085] like Figure 6 As shown, the light emitting layer wafer 200 is etched to form a plurality of spaced light emitting units 201 .

[0086] The light emitting unit 201 may be formed by dry etching or other feasible etching methods.

[0087] like Figure 8 As shown, the first heat-conducting end 31 and the second heat-conducting end 32 are formed outside the light-emitting diode 20 .

[0088] like Fig. 9 As shown, the P-type semiconductor layer 33 and the N-type semiconductor layer 34 are formed respectively; the P-type semiconductor layer 33 covers at least a portion of the first heat-conducting end 31 ; and the N-type semiconductor layer 34 covers at least a portion of the second heat-conducting end 32 .

[0089] The P-type semiconductor layer 33 and the N-type semiconductor layer 34 can be formed by forming corresponding material layers and then etching accordingly. One of the P-type semiconductor layer 33 and the N-type semiconductor layer 34 can be formed first, and then the other one can be formed.

[0090] like Fig.10 As shown, the heat-conducting cold end 35 is formed.

[0091] like Figure 7 As shown, in some embodiments, after etching the light-emitting layer wafer 200 to form a plurality of spaced light-emitting units 201, and before forming the first heat-conducting end 31 and the second heat-conducting end 32 outside the light-emitting diode 20, the method further includes:

[0092] A passivation layer 50 is formed on the sidewalls of the light emitting unit 201 .

[0093] like Fig.11 and Fig.12 As shown, in step S130 , an encapsulation layer 40 is formed, and the encapsulation layer 40 encapsulates the light emitting diode 20 and the thermoelectric cooling device 30 .

[0094] In some embodiments, after forming the heat-conducting cold end 35, the method includes the following steps S131 to S133:

[0095] like Fig.11As shown, in step S131, a first encapsulation layer 41 is formed, and the first encapsulation layer 41 encapsulates the heat-conducting cold end 35, the first heat-conducting hot end 31, the second heat-conducting hot end 32 and the side of the light-emitting unit 201, and the side of the light-emitting unit 201 away from the driving substrate 10 is exposed.

[0096] like Fig.12 As shown, in step S132 , a conductive layer 60 is disposed on a side of the light emitting layer 22 away from the driving substrate 10 .

[0097] In step S133 , a second encapsulation layer 42 is formed, wherein the second encapsulation layer 42 covers the first encapsulation layer 41 and the conductive layer 60 ; the first encapsulation layer 41 and the second encapsulation layer 42 form the encapsulation layer 40 .

[0098] The material of the encapsulation layer 40 can be one or more of epoxy molding compound, silica gel, polyimide, silicone resin, polybenzoxazole and polyester resin. The first encapsulation layer 41 and the second encapsulation layer 42 are made of corresponding materials, and the materials of the first encapsulation layer 41 and the second encapsulation layer 42 can be the same or different.

[0099] It should be noted that the technical solutions or technical features described in the above embodiments can be combined or supplemented with each other without causing conflicts. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the drawings; all modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of this application should be included in the scope of protection of this application.

Claims

1. A light emitting diode structure, characterized in that: include: Driver substrate; A light emitting diode, the light emitting diode comprising a plurality of light emitting units spaced apart on the driving substrate; A thermoelectric refrigeration device, the thermoelectric refrigeration device comprising a heat-conducting cold end, a first heat-conducting hot end, a second heat-conducting hot end, a P-type semiconductor layer and an N-type semiconductor layer; wherein the heat-conducting cold end is at least arranged in the interval of at least part of the light-emitting unit; the P-type semiconductor layer and the N-type semiconductor layer are arranged between the heat-conducting cold end and the driving substrate, and are respectively in contact with the heat-conducting cold end; the first heat-conducting hot end and the second heat-conducting hot end are arranged on the driving substrate and are located outside the light-emitting diode, and the P-type semiconductor layer is connected to the first heat-conducting hot end, and the N-type semiconductor layer is connected to the second heat-conducting hot end; An encapsulation layer encapsulates the light emitting diode and the thermoelectric cooling device.

2. The light emitting diode structure according to claim 1, characterized in that: The P-type semiconductor layer includes a plurality of P-type semiconductor layer units, and the N-type semiconductor layer includes a plurality of N-type semiconductor layer units. The plurality of P-type semiconductor layer units and the plurality of N-type semiconductor layer units are arranged at intervals in a first direction.

3. The light emitting diode structure according to claim 1, characterized in that: The first heat-conducting end and the second heat-conducting end are arranged relatively on two sides of the light-emitting diode in a second direction; the second direction forms a non-zero angle with the first direction.

4. The light emitting diode structure according to claim 1, characterized in that: The P-type semiconductor layer covers the surface of the first heat-conducting end close to the light-emitting diode, or the P-type semiconductor layer covers the surface of the first heat-conducting end close to the light-emitting diode and the surface of the first heat-conducting end away from the driving substrate; The N-type semiconductor layer covers the surface of the second heat conductive end close to the light emitting diode, or the N-type semiconductor layer covers the surface of the second heat conductive end close to the light emitting diode and the surface of the second heat conductive end away from the driving substrate.

5. The light emitting diode structure according to claim 1, characterized in that: The light-emitting unit includes a light-emitting layer and a bonding layer for fixing the light-emitting layer to the driving substrate; the thickness of the N-type semiconductor layer is consistent with the thickness of the bonding layer, and the thickness of the P-type semiconductor layer is consistent with the thickness of the bonding layer.

6. The light emitting diode structure according to claim 1, characterized in that: Part of the encapsulation layer is filled between the P-type semiconductor layer and the N-type semiconductor layer; and / or, The sidewalls of the light emitting diode are provided with a passivation layer; and / or, The orthographic projection of the heat-conducting cold end on the driving substrate along the thickness direction of the light-emitting diode does not overlap with the orthographic projections of the first heat-conducting hot end and the second heat-conducting hot end on the driving substrate along the thickness direction of the light-emitting diode.

7. The light emitting diode structure according to claim 1, characterized in that: The heat-conducting cold end covers the outer periphery of each of the light-emitting units; The heat-conducting cold end is a light-shielding material layer, and the material of the heat-conducting cold end is gold, aluminum, copper or silver; The hot end material is aluminum, copper, silver, molybdenum or silicon carbide.

8. The light emitting diode structure according to claim 1, characterized in that: A conductive layer is further provided on a side of the plurality of light-emitting units away from the driving substrate, the light-emitting units include a light-emitting layer and a bonding layer for fixing the light-emitting layer to the driving substrate, and the driving substrate includes a light-emitting driving circuit connected to the conductive layer and the bonding layer; The driving substrate further includes a heat dissipation circuit, which is used to be connected to the first heat-conducting hot end and the second heat-conducting hot end to provide an electrical signal to the thermoelectric cooling device.

9. A method for preparing a light emitting diode structure, characterized in that: include: Providing a drive substrate; A light emitting diode and a thermoelectric cooling device are formed on a driving substrate; wherein the light emitting diode comprises a plurality of light emitting units spaced apart on the driving substrate; the thermoelectric cooling device comprises a heat conductive cold end, a first heat conductive hot end, a second heat conductive hot end, a P-type semiconductor layer and an N-type semiconductor layer; wherein the heat conductive cold end is at least arranged in the interval between at least part of the light emitting units; the P-type semiconductor layer and the N-type semiconductor layer are spaced apart between the heat conductive cold end and the driving substrate, and are in contact with the heat conductive cold end respectively; the first heat conductive hot end and the second heat conductive hot end are spaced apart on the driving substrate and are located outside the light emitting diode, and the P-type semiconductor layer is connected to the first heat conductive hot end, and the N-type semiconductor layer is connected to the second heat conductive hot end; An encapsulation layer is formed, wherein the encapsulation layer encapsulates the light emitting diode and the thermoelectric cooling device.

10. The method for preparing a light emitting diode structure according to claim 9, characterized in that: The step of forming a light emitting diode and a thermoelectric cooling device on a driving substrate comprises: Providing a light-emitting layer wafer, and bonding the light-emitting layer wafer to the driving substrate via a bonding layer; Etching the light-emitting layer wafer to form a plurality of spaced light-emitting units; Forming the first heat-conducting end and the second heat-conducting end outside the light-emitting diode; The P-type semiconductor layer and the N-type semiconductor layer are formed respectively; the P-type semiconductor layer covers at least a portion of the first heat-conducting end; the N-type semiconductor layer covers at least a portion of the second heat-conducting end; The heat-conducting cold end is formed.

11. The method for preparing a light emitting diode structure according to claim 10, characterized in that: After etching the light-emitting layer wafer to form a plurality of spaced light-emitting units and before forming the first heat-conducting end and the second heat-conducting end outside the light-emitting diode, the method further includes: A passivation layer is formed on the sidewall of the light emitting unit.

12. The method for preparing a light emitting diode structure according to claim 10, characterized in that: After forming the heat-conducting cold end, the method includes: forming a first encapsulation layer, wherein the first encapsulation layer encapsulates the heat-conducting cold end, the first heat-conducting hot end, the second heat-conducting hot end and the side of the light-emitting unit, and the side of the light-emitting unit facing away from the driving substrate is exposed; Disposing a conductive layer on a side of the light emitting layer away from the driving substrate; A second encapsulation layer is formed, wherein the second encapsulation layer covers the first encapsulation layer and the conductive layer; the first encapsulation layer and the second encapsulation layer form the encapsulation layer.

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