Silicon-based display panel

Abstract

The embodiment of the invention provides a silicon-based display panel. Comprising a plurality of light-emitting devices arranged in an array mode, each light-emitting device at least comprises a first light-emitting layer, a bonding layer, a second light-emitting layer and a refraction layer, the refraction layer comprises a first sub-refraction part and a second sub-refraction part, and the first sub-refraction part and the second sub-refraction part have different refractive indexes. The first sub-refraction part and the second sub-refraction part are provided with an interface, and the interface can change the propagation path of light. The refraction layer is arranged on the light-emitting layer, and the light rays of the light-emitting layer in the adjacent pixels are transmitted to the other working pixel unit through the refraction layer, so that the light rays in different pixel units are concentrated into the same pixel unit, the intensity of the light rays in the light emitting direction of the pixel unit is enhanced, and the purpose of improving the white light brightness is achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of design and manufacturing of display panels, and in particular to a silicon-based display panel. Background Art

[0002] Organic Light-Emitting Diode (OLED) has a series of advantages such as full solid state, self-luminescence, fast response speed, wide viewing angle, and wide operating temperature range, and has attracted more and more attention from academia and industry.

[0003] In order to further improve the luminous performance of the display panel, a silicon-based (Si) circuit substrate material is currently used as a substrate and a Si-uLED light-emitting device is further formed thereon. Compared with traditional light-emitting devices, Si-uLED has the advantages of smaller volume and higher brightness and has attracted attention. However, in the prior art, when preparing the above-mentioned light-emitting device, due to the small volume of Si-uLED, and when the smaller Si-uLED is vertically stacked and a device structure with better full-color display performance is formed, a size effect will occur. That is, as the pixel size decreases, the side area and the opening area of ​​the pixel will increase accordingly, which will lead to a significant decrease in the luminous efficiency of the light-emitting device. For example, when preparing a vertically stacked full-color panel, the luminous and display area of ​​the bottom layer is insufficient, and due to the vertical stacking structure design, the gap distance between adjacent devices will be further increased, and the internal structure design of the device is unreasonable, which leads to the Si-uLED being in operation. When the pixel unit displays a dynamic image, the light intensity of some pixel units is not ideal, and the corresponding white light brightness is insufficient, which leads to an unsatisfactory display effect of the panel.

[0004] To sum up, in the prior art, when preparing and forming a silicon-based light-emitting device, when the silicon-based light-emitting device is working, when the pixel unit displays dynamic images, the light output intensity of some pixel units is not ideal, and the corresponding white light brightness is insufficient, which leads to the problem of unsatisfactory panel display effect, which is not conducive to further improvement of the comprehensive performance of the device. Summary of the invention

[0005] The embodiment of the present invention provides a silicon-based display panel to effectively improve the problem that in the existing silicon-based display panel, when the pixel units display dynamic images, the light intensity of some pixel units is not ideal, the corresponding white light brightness is insufficient, and the panel display effect is not ideal.

[0006] In order to solve the above technical problems, a first aspect of an embodiment of the present invention provides a silicon-based display panel, comprising a silicon-based circuit substrate and a light-emitting device arranged on the silicon-based circuit substrate, wherein the light-emitting device at least comprises:

[0007] A first light-emitting layer is disposed on the silicon-based circuit substrate;

[0008] A bonding layer, disposed on the first light-emitting layer;

[0009] a second light-emitting layer, disposed on the bonding layer and electrically connected to the first light-emitting layer; and

[0010] a refractive layer, disposed between the first light-emitting layer and the second light-emitting layer;

[0011] The refraction layer includes a first sub-refractive portion and a second sub-refractive portion, the first sub-refractive portion and the second sub-refractive portion have different refractive indices, and the first sub-refractive portion and the second sub-refractive portion have an interface, and the interface is used to change the light emitted by the light-emitting layer so that the light propagates to the adjacent light-emitting device and is emitted from the light-emitting side.

[0012] According to an embodiment of the present invention, the refraction layer further comprises a plurality of driving electrodes, the refraction layer further comprises a plurality of driving electrodes, the driving electrodes are correspondingly arranged on two opposite sides of the refraction layer, and the driving electrodes on different sub-refractive parts are independently controlled.

[0013] According to one embodiment of the present invention, the driving electrodes include a first driving electrode, a second driving electrode, a third driving electrode and a fourth driving electrode arranged on the first side, and a first driving electrode, a second driving electrode, a third driving electrode and a fourth driving electrode arranged on the second side, and the same driving electrodes on the first side and the second side are arranged opposite to each other.

[0014] According to an embodiment of the present invention, the cross-sectional shapes of the first driving electrode, the first driving electrode, the second driving electrode, the third driving electrode and the fourth driving electrode are set to be triangular, and the different driving electrodes on the first side surface and the second side surface are spliced ​​to form a rectangular cross-section;

[0015] The first driving electrode, the second driving electrode and the refractive layer form a first refractive region, the third driving electrode, the fourth driving electrode and the refractive layer form a second refractive region, and the refractive indexes in the first refractive region and the second refractive region are different.

[0016] According to an embodiment of the present invention, the first driving electrode and the second driving electrode are arranged on the same side of the diagonal line of the rectangle, and the third driving electrode and the fourth driving electrode are arranged on the other side of the diagonal line of the rectangle;

[0017] The first driving electrode and the second driving electrode have a first voltage, the third driving electrode and the fourth driving electrode have a second voltage, and the first voltage and the second voltage have different voltage values.

[0018] According to an embodiment of the present invention, the light-emitting device includes a first light-emitting device and a second light-emitting device disposed on one side of the first light-emitting device, the first light-emitting device includes a first pixel unit, the second light-emitting device includes a second pixel unit, in the first pixel unit, the refractive layer in the region corresponding to the first driving electrode and the second driving electrode has a first refractive index, the electro-optical material in the region corresponding to the third driving electrode and the fourth driving electrode has a second refractive index, in the second pixel unit, the refractive layer in the region corresponding to the first driving electrode and the second driving electrode has a third refractive index, the electro-optical material in the region corresponding to the third driving electrode and the fourth driving electrode has a fourth refractive index;

[0019] Among them, when the first pixel unit is lit and the second pixel unit is not lit, the area corresponding to the first refractive index is the first sub-refractive portion, the area corresponding to the second refractive index is the second sub-refractive portion, and the area corresponding to the third refractive index is the second sub-refractive portion, and the area corresponding to the fourth refractive index is the first sub-refractive portion, and the interface in the second pixel unit is used to totally reflect light into the refractive layer in the first pixel unit, and the first refractive index is less than the second refractive index, and the third refractive index is greater than the fourth refractive index.

[0020] According to an embodiment of the present invention, the refractive index of the refractive layer is set to 2.15-2.28.

[0021] According to an embodiment of the present invention, the refractive layer includes any one of LiNbO3, LiTaO3, BaTiO3, and AlGaAs.

[0022] According to an embodiment of the present invention, the silicon-based display panel further includes: a third light-emitting layer, the bonding layer includes a first bonding layer, a second bonding layer and a third bonding layer, when the first bonding layer is disposed on the first light-emitting layer, the second light-emitting layer is disposed on the first bonding layer, the second bonding layer is disposed on the second light-emitting layer, the third light-emitting layer is disposed on the second bonding layer, and the third bonding layer is disposed on the third light-emitting layer;

[0023] The area of ​​the first light-emitting layer is larger than the area of ​​the second light-emitting layer and the third light-emitting layer on the side away from the silicon-based circuit substrate.

[0024] According to an embodiment of the present invention, the first light-emitting layers corresponding to different pixel units are configured as the same layer.

[0025] Beneficial effects of the embodiments of the present invention: Compared with the prior art, the embodiments of the present application provide a silicon-based display panel. The silicon-based display panel includes a plurality of light-emitting devices arranged in an array, each of the light-emitting devices includes at least a first light-emitting layer, a bonding layer, a second light-emitting layer and a refraction layer, the refraction layer includes a first sub-refractive portion and a second sub-refractive portion, the first sub-refractive portion and the second sub-refractive portion have different refractive indices, and the first sub-refractive portion and the second sub-refractive portion have an interface, and the interface can change the propagation path of the light. In the embodiments of the present application, a refraction layer is provided on the light-emitting layer, and the light of the light-emitting layer in the adjacent pixel is propagated to another working pixel unit through the refraction layer, so that the light in different pixel units is concentrated into the same pixel unit, thereby enhancing the intensity of the light in the light emitting direction of the pixel unit, and achieving the purpose of improving the brightness of white light. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments or the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0027] Figure 1 A schematic diagram of the structure of a vertically stacked full-color display panel provided in the prior art;

[0028] Figure 2 A schematic diagram of a film layer structure of a silicon-based display panel provided in an embodiment of the present application;

[0029] Figure 3 It is a schematic diagram of the structure of the refractive layer provided in an embodiment of the present application;

[0030] Figure 4 This is a schematic diagram of the planar structure of the silicon-based display panel provided in an embodiment of the present application;

[0031] Figure 5 This is a schematic diagram of the function of the refractive layer provided in an embodiment of the present application;

[0032] Figure 6 This is a schematic diagram of the effect of the refractive layer on light in the embodiment of the present application;

[0033] Figure 7 This is a schematic diagram of another light propagation effect in an embodiment of the present application;

[0034] Figure 8A schematic diagram of light propagation of yet another display panel provided in an embodiment of the present application;

[0035] Figure 9-11 Schematic diagram of the film layer corresponding to the preparation process provided in the examples of this application. DETAILED DESCRIPTION

[0036] In the following detailed description, only certain embodiments of the present invention are shown and described simply by way of illustration. As those skilled in the art will appreciate, the embodiments described herein may be modified in various ways without departing from the spirit or scope of the present invention.

[0037] In the drawings, the thickness of layers, films, panels, regions, etc. may be exaggerated for clarity and for better understanding and ease of description. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being “on” another element, it can be directly on the other element or intervening elements may also be present.

[0038] In addition, unless explicitly described to the contrary, the word "comprise" and its variations like "include" or "contain" will be understood to imply the inclusion of the discussed elements, but not necessarily the exclusion of other elements. Further, in the specification, the word "on..." refers to placement above or below an object part, and does not necessarily mean placement on the upper side of an object part based on the direction of gravity.

[0039] It will be understood that although the terms "first", "second", etc. may be used herein to describe various components, these components should not be limited by these terms. These components are only used to distinguish one component from another.

[0040] As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

[0041] It will also be understood that the terms “comprises” and / or “comprising” as used herein specify the presence of stated features or components, but do not exclude the presence or addition of one or more other features or components.

[0042] It will be understood that when a layer, region or component is referred to as being “formed on” another layer, region or component, it may be directly or indirectly formed on the other layer, region or component. For example, intervening layers, regions or components may be present.

[0043] In the following examples, the x-axis, y-axis, and z-axis are not limited to the three axes of the rectangular coordinate system and can be interpreted in a broader sense. For example, the x-axis, y-axis, and z-axis can be perpendicular to each other, or can represent different directions that are not perpendicular to each other.

[0044] like Figure 1 As shown, Figure 1 The schematic diagram of the structure of the vertically stacked full-color display panel provided in the prior art. When preparing the above-mentioned display panel, the display panel 100 includes a plurality of pixel units 20, and each pixel unit 20 also includes a red light-emitting layer 102 arranged on a silicon substrate 101, a green light-emitting layer 103 arranged on the red light-emitting layer 102, and a blue light-emitting layer 104 arranged on the green light-emitting layer 103. The above-mentioned organic red light-emitting layer 102, green light-emitting layer 103 and blue light-emitting layer 104 are stacked in sequence to form a vertical stacking structure to improve its display effect. However, due to the small size of the silicon-based display panel, when multiple functional film layers are arranged on the small size, the preparation process is complicated and a size effect will occur, which leads to a significant reduction in the efficiency of the silicon-based display panel, which is not conducive to further improvement of the comprehensive performance of the device.

[0045] A silicon-based display panel and a semiconductor device are provided in the embodiments of the present application. By improving the internal structure of the silicon-based display panel, the light-emitting and display effects thereof are improved, and the overall performance thereof is effectively enhanced.

[0046] like Figure 2 As shown, Figure 2 The following is a schematic diagram of a film structure of a silicon-based display panel provided in an embodiment of the present application. When setting up the silicon-based display panel, the selected substrate is a silicon-based circuit substrate 301, and each light-emitting device is directly prepared on the silicon-based circuit substrate 301 to effectively improve the comprehensive performance of the display panel.

[0047] Specifically, when preparing the silicon-based circuit substrate 301, a plurality of control transistors are also formed in the silicon-based circuit substrate 301, which are not specifically shown in the figure. The plurality of control transistors can provide different control signals to ensure the normal operation of the display panel. When preparing the silicon-based circuit substrate, its preparation process and corresponding structure can be prepared according to the general preparation process of silicon-based circuit substrates.

[0048] Furthermore, the silicon-based display panel also includes a plurality of light-emitting devices arranged in an array on the silicon-based circuit substrate, and each light-emitting device is provided with a pixel unit 20. In the following embodiments, two adjacent light-emitting devices are used as an example for description. Specifically, the light-emitting device includes a first light-emitting device and a second light-emitting device arranged on one side of the first light-emitting device. The first light-emitting device corresponds to the first pixel unit 201, and the second light-emitting device corresponds to the second pixel unit 202. For details, see Figure 2 At the same time, each pixel unit also includes at least one light-emitting layer 40 and a bonding layer 50 correspondingly arranged between the light-emitting layers 40. In the embodiment of the present application, each light-emitting layer 40 is arranged on the light-emitting path of the light-emitting device.

[0049] In the following embodiments, when a multi-layer light-emitting layer 40 is provided, the light-emitting layer 40 includes a first light-emitting layer, a second light-emitting layer, and a third light-emitting layer which are stacked. For the sake of convenience, in the following embodiments, the first light-emitting layer is described as a red light-emitting layer 102, the second light-emitting layer is a green light-emitting layer 103, and the third light-emitting layer is a blue light-emitting layer 104. Optionally, the colors of the above-mentioned different light-emitting layers can be changed according to needs, and the control principles and stacking methods of the light-emitting layers of different colors can be carried out in accordance with the methods in the embodiments of the present application, which will not be repeated here.

[0050] In the embodiment of the present application, when the above-mentioned different light-emitting layers are provided, the light-emitting layer is provided as an inorganic light-emitting layer, and optionally, the first light-emitting layer, the second light-emitting layer and the third light-emitting layer each include a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and the active layer may have a multi-quantum well structure. When provided, it may be provided according to a conventional full-color LED stacked structure, which is only an example and will not be described in detail.

[0051] Specifically, the red light emitting layer 102 can be directly disposed on the first electrode 302 of the silicon-based circuit substrate 301, so that a control signal is provided to it through the first electrode 302. Furthermore, when different light emitting layers 40 corresponding to each pixel unit are disposed, the area of ​​the light emitting layer close to the first electrode 302 can be larger than the area of ​​the light emitting layer far from the first electrode 302. In this way, the light emitting layer 40 at the bottom has a larger light emitting area, thereby further improving the full-color effect of the vertical stacking structure and ensuring the comprehensive performance of the display panel.

[0052] In the embodiment of the present application, when the red light-emitting layer 102 is provided, a layer of the red light-emitting layer 102 is directly laid on the entire surface of the silicon-based display panel, so that different pixel units can use the same red light-emitting layer. In this way, a whole layer of red light-emitting layer 102 is provided on the silicon-based substrate to simplify the film structure. Moreover, since different pixel units share the same red light-emitting layer, when some pixel units cannot work normally, their corresponding red light-emitting layers can still provide light for pixel units in other areas, thereby effectively improving the brightness of the red pixels in each pixel unit. When the silicon-based display panel displays dynamic images, the purpose of improving the brightness of white light can be achieved.

[0053] Further, the bonding layer 50 may include a first bonding layer 501 and a second bonding layer 502. Specifically, the first bonding layer 501 is disposed on the red light-emitting layer 102, and the green light-emitting layer 103 is disposed on the first bonding layer 501, and the second bonding layer 502 is disposed on the green light-emitting layer 103, and the blue light-emitting layer 104 is disposed on the second bonding layer 502, so that light-emitting layers of different colors are disposed on corresponding bonding layers, and a silicon-based display panel with a vertical stacking structure in the embodiment of the present application is formed.

[0054] In the embodiment of the present application, when setting the above-mentioned different light-emitting layers, the area of ​​the red light-emitting layer 102 is larger than the area of ​​the green light-emitting layer 103. At the same time, the area of ​​the green light-emitting layer 103 is larger than the area of ​​the blue light-emitting layer 104, so that the light-emitting layers of different colors are set to different area sizes to effectively improve their full-color display effect.

[0055] Furthermore, a second electrode 602 and a third electrode 603 are correspondingly disposed on both sides of each light-emitting layer. The second electrode 602 and the third electrode 603 are correspondingly disposed on both sides of the light-emitting layer. Figure 2 The electrode connection structure in the embodiment, for example, the second electrode 602 is respectively arranged on the right side of the green light emitting layer 103 and the blue light emitting layer 104, and the third electrode 603 is respectively arranged on the left side of the green light emitting layer 103 and the blue light emitting layer or on the top of the corresponding light emitting layer, and the third electrodes of different colors are electrically connected, see Figure 1 The electrode connection method and structure in the device are used to realize signal transmission.

[0056] In the embodiment of the present application, for each light-emitting layer of different colors, the second electrode 602 and the third electrode 603 are equivalent to the anode and the cathode, so that the second electrode and the third electrode 603 are respectively connected with the blue light-emitting layer 104 and the green light-emitting layer 103, and control the normal operation of the corresponding light-emitting layer. When the above-mentioned different electrodes are set, their settings and arrangement positions can be set according to the specific product, which will not be repeated here.

[0057] See Figure 2 In the structure, the silicon-based display panel also includes a refraction layer 700. In the embodiment of the present application, the refraction layer 700 is correspondingly arranged between two adjacent light-emitting layers. In the following embodiments, the refraction layer 700 is arranged between the red light-emitting layer 102 and the green light-emitting layer 103. Optionally, when setting, a bonding layer may be first arranged on the red light-emitting layer 102, and then the refraction layer 700 may be arranged on the bonding layer, and another bonding layer may be continuously arranged, and a green light-emitting layer may be arranged on the bonding layer, so that the bonding layer is arranged between different functional film layers to effectively avoid the problem of crosstalk between adjacent light-emitting layers.

[0058] In the embodiment of the present application, the refraction layer 700 is correspondingly disposed in each pixel unit 20. The area of ​​the refraction layer 700 is greater than or equal to the area of ​​the green light emitting layer 103, so as to ensure the effect of the refraction layer 700 on the light.

[0059] Furthermore, the refractive index in different areas of the refractive layer 700 may change with the change of the voltage value inside the refractive layer. When different voltage differences or electric field strengths are formed in different areas, the refractive index in the corresponding areas is different. When the refractive index is different, different propagation effects will occur when light passes through the refractive layer.

[0060] In the embodiment of the present application, by adjusting the voltage values ​​at different areas inside the refractive layer 700, when the light passes through different refractive indices, its propagation path can be changed, and the red light in other pixel units can be propagated to the refractive layer in the adjacent red pixel unit, and then emitted from the light-emitting side of the refractive layer again, thereby effectively increasing the light output amount and light output intensity of the red pixel in the pixel unit, and effectively improving the luminous effect of the panel and the corresponding luminous brightness.

[0061] Specifically, when the refraction layer 700 is provided, the first pixel unit 201 and the second pixel unit 202 provided on one side of the first pixel unit 201 are taken as an example. Figure 3 As shown, Figure 3 Schematic diagram of the structure of the refractive layer provided in the embodiment of the present application. Figure 3 In the figure, the left side is a side view of the refractive layer, and the right side is a front view of the refractive layer. The refractive layer 700 also includes a plurality of driving electrodes 80. The driving electrodes are correspondingly arranged on two opposite sides of the refractive layer, and each driving electrode is independently controlled.

[0062] Specifically, the driving electrode 80 includes a first driving electrode a, a second driving electrode b, a third driving electrode c and a fourth driving electrode d. When arranged, the above four different driving electrodes are respectively and correspondingly attached to the two opposite sides of the material electrode layer 700 and arranged accordingly.

[0063] If the two opposite sides of the material electrode layer 700 are the first side 97 and the second side 98, when setting, the first driving electrode a, the second driving electrode b, the third driving electrode c and the fourth driving electrode d are set on the first side and the second side respectively. At the same time, it is ensured that the first driving electrode a on the first side corresponds to the first driving electrode a on the second side, the second driving electrode b on the first side corresponds to the second driving electrode b on the second side, and the third driving electrode c on the first side corresponds to the third driving electrode c on the second side... and the setting is carried out according to this rule. Further, when the driving electrodes are set to other numbers, they are still set according to the above rules, which will not be repeated here.

[0064] In the embodiment of the present application, when the above-mentioned refraction layer is set, the refractive index at different regions thereof may change with the change of the voltage value inside the refraction layer. When the electro-optic material layer has different voltage differences, the refraction layer 700 may include a first sub-refractive portion 777 and a second sub-refractive portion 778. The first sub-refractive portion 777 and the second sub-refractive portion 778 have different refractive indices, and there is an interface 779 between the two sub-refractive portions. The interface 779 is the interface between two different refraction portions. When light propagates to the interface 779, the interface may change the propagation path of the light, such as causing full emission, thereby achieving a specific propagation effect.

[0065] See Figure 3 When the first driving electrode a and the second driving electrode b have the same voltage, the regions corresponding to the electrodes have the same refractive index, thereby forming the first sub-refractive portion, and when the third driving electrode c and the fourth driving electrode d have the same voltage, the electrodes have the same refractive index, thereby corresponding to the second sub-refractive portion 778. Optionally, the region corresponding to the sub-refractive portion may be redefined by adjusting the voltage between the electrodes, and the above is only an example.

[0066] Further, when setting the above-mentioned different driving electrodes, the first driving electrode a, the second driving electrode b, the third driving electrode c and the fourth driving electrode d can all be set to triangle, rectangle, circle or other cross-sectional shapes. In the following embodiments, a triangular structure is used as an example. The above-mentioned different triangular driving electrodes are spliced ​​and arranged, and adjacent driving electrodes do not contact and a gap is set, so as to ensure that different driving electrodes can be controlled relatively independently. At the same time, the size of the above-mentioned driving electrodes is not limited and can be set according to their corresponding areas and film layer positions.

[0067] For details, see Figure 3In the embodiment, on each side, the triangular driving electrode forms a rectangular cross section, so that the first driving electrode and the second driving electrode are equivalent to being located on the same side of the rectangular diagonal line, and the third driving electrode and the fourth driving electrode are equivalent to being located on the other side of the rectangular diagonal line.

[0068] Specifically, when setting, on each side, the first drive electrode a and the third drive electrode c are opposite and set to the same size, and the second drive electrode b and the fourth drive electrode d are opposite and set to the same size. When the first drive electrode a and the third drive electrode c are set, the lengths of the sides of the triangular electrode can be set to 2um, 2um, and 2um respectively, and when the second drive electrode b and the fourth drive electrode d are set, the lengths of the sides can be set to 2um, 2um, and 3.46um respectively.

[0069] Further, such as Figure 4 As shown, Figure 4 FIG. 1 is a schematic diagram of the planar structure of the silicon-based display panel provided in the embodiment of the present application. Figure 2 In the film layer structure, in the embodiment of the present application, when the above-mentioned silicon-based display panel is set, the refractive layer 700 also includes a plurality of lead-out electrode lines 701, wherein the lead-out electrode lines 701 are electrically connected to each driving electrode, and a control signal is applied to the driving electrode through the corresponding lead-out electrode lines 701, and the voltage on different driving electrodes is controlled, so that an electric field of the required intensity is formed in different areas inside the refractive layer 700, and a refractive index of corresponding size is obtained.

[0070] like Figure 5 As shown, Figure 5 Schematic diagram of the function of the refractive layer provided in the embodiment of the present application. Take a driving electrode as an example for explanation, such as the second driving electrode b set on two opposite different sides, so that a triangular prism structure is formed. And the voltage V is applied to the second driving electrode, and an electric field E will be formed in the area corresponding to the refractive layer 700 between the two second driving electrodes. Since the voltage is applied to the second driving electrode b, the refractive index of the electro-optical material changes. Under the voltage V, the refractive index of the refractive layer 700 in the corresponding triangular prism area is n. Similarly, in the first driving electrode a, the third driving electrode c and the fourth driving electrode d, the above structure and control method are followed. In this way, by controlling different driving electrodes on different sides and controlling each electrode separately, optionally, the first driving electrode a, the second driving electrode b, the third driving electrode c and the fourth driving electrode d on different sides can be applied with the same or different voltages, which are not limited here. Thereby, different voltage values ​​or voltage differences are formed in the corresponding regions, and different electric fields are formed inside the refractive layer, and at the same time, different refractive indices are formed in the corresponding regions. Optionally, the refractive index changes in direct proportion to the first power of the applied electric field strength.

[0071] In the embodiment of the present application, when the refractive layer 700 is provided, the refractive layer 700 may include LiNbO 3 、LiTaO 3 、BaTiO 3 , AlGaAs. If the refractive layer 700 is set to LiNbO 3 Material layer.

[0072] Further, in the embodiment of the present application, when the refractive layer and the refractive index corresponding to the refractive layer are set, the following relationship is satisfied:

[0073]

[0074] Among them, n 0 is the refractive index of the material when the electric field E = 0, E a is the applied external electric field, γ ij is the linear electro-optic coefficient, i and j correspond to the orientation of the input light relative to the axis of the anisotropic material in an appropriate coordinate system. In the above relationship, the refractive index of the refractive layer can vary in direct proportion to the first power of the applied electric field intensity. Optionally, the above electro-optic material can also be set to other corresponding relationships, and the implementation principle is the same as that of the present application, which will not be repeated here.

[0075] In the embodiment of the present application, when the electro-optical material is provided, the refractive index of the refractive layer 700 may be set to be 2.15 to 2.28. For example, when no voltage is applied to the refractive layer 700, the corresponding refractive index may be 2.26.

[0076] Furthermore, in order to improve the display effect of the silicon-based display panel, the transmittance of the refractive layer 700 can be set to be greater than or equal to 98%, that is, the transmittance at a wavelength of 450nm is greater than or equal to 98%, such as set to 99.4%, thereby reducing the consumption of light by the refractive layer.

[0077] like Figure 6 As shown, Figure 6 Schematic diagram of the effect of the refraction layer on light in the embodiment of the present application. Figure 3 In combination with other related figures, in the embodiment of the present application, two adjacent first pixel units 201 and second pixel units 202 are taken as an example.

[0078] When one of the two pixels is working, such as when the first pixel unit is lit and the second pixel unit 202 is not lit, at this time, since the first pixel unit 201 and the second pixel unit 202 share the same red light-emitting layer 102, when the red light-emitting layer 102 works normally and emits light, red light will appear in the corresponding areas of the first pixel unit 201 and the second pixel unit 202.

[0079] The voltage and electric field strength on the corresponding driving electrode in the refractive layer 700 in the different pixel units are adjusted. At this time, for the first pixel unit 201, the first driving electrode a and the second driving electrode b are adjusted, and the first driving electrode a and the second driving electrode b have the same voltage value V1, and at this time, the corresponding area of ​​the first driving electrode a and the second driving electrode b in the refractive layer can be the first refractive area, and the refractive layer in the first refractive area has a first refractive index n1. At the same time, the third driving electrode c and the fourth driving electrode d are adjusted, such as making them also have the same voltage value V2, and the voltage value V1 is different from the voltage value V2. In this way, the area corresponding to the third driving electrode c and the fourth driving electrode d can be the second refractive area, and the refractive layer in the second refractive area has a second refractive index n2.

[0080] For the second pixel unit 202, the driving electrodes with different refractive layers in the region are also adjusted. Specifically, the first driving electrode a and the second driving electrode b are adjusted so that the driving electrodes have the same voltage V1'. At this time, the refractive index in the region corresponding to the first driving electrode a and the second driving electrode b is n3. At the same time, the third driving electrode c and the fourth driving electrode d are adjusted so that they have the same voltage value V2'. At this time, under the voltage corresponding to the voltage value V2', the refractive index of the refractive layer in the corresponding region is n4.

[0081] In the embodiment of the present application, the voltage on the driving electrode in different pixel units is adjusted so that the corresponding areas have different refractive indices. For the first pixel unit 201, the first refractive index n1 is less than the second refractive index n2. At this time, a total reflection surface is formed between the two different refractive indices. When the light emitted by the red light-emitting layer in the first pixel unit 201 enters the refractive layer, it will pass through the different refractive index area again, and be transmitted to the green light-emitting layer, and finally be emitted from the light-emitting side of the display panel.

[0082] In the second pixel unit 202, the refractive index n3 is greater than the refractive index n4. Figure 6In the embodiment, when the light emitted by the red light emitting layer in the second pixel unit area passes through the refractive layer 700, since the high refractive index area is located at the bottom and the low refractive index area is located at the top in the electro-optical material, the bottom red light will be totally reflected at the total reflection surface when passing through different refractive index areas, thereby changing the propagation path of the red light in the second pixel unit 202 and being reflected to the first pixel unit 201. When the reflected light enters the refractive layer in the first pixel unit 201, since it will first enter the high refractive index n2 area and then enter the low refractive index n1 area, the light reflected from the second pixel unit 202 into the first pixel unit will be totally reflected again at the high and low refractive index total reflection surface, and the reflected light will be changed from the horizontal direction to the vertical direction, and will pass through other light emitting layers in sequence and be emitted from the light emitting side of the first pixel unit.

[0083] In the embodiment of the present application, in order to achieve total reflection at the interface between different sub-refractive parts, at this time, in the first pixel unit 201, the area corresponding to the first refractive index is the first sub-refractive index part, and the area corresponding to the second refractive index is the second sub-refractive part, and the first refractive index in the first sub-refractive part is less than the second refractive index in the second sub-refractive part. In the second pixel unit 202, the area corresponding to the third refractive index is the second sub-refractive part, and the area corresponding to the fourth refractive index is the first sub-refractive part. At this time, the first refractive index in the first sub-refractive part 777 is still less than the second refractive index in the second sub-refractive part 778. In this way, when the light passes through the interface formed by the different refractive parts, total reflection can occur and form a specific light path.

[0084] like Figure 7 As shown, Figure 7 FIG. 1 is a schematic diagram of another light propagation effect in an embodiment of the present application. Figure 6 The effect of Figure 7 is a schematic diagram when the second pixel unit works normally and the first pixel unit does not work.

[0085] At this time, the first driving electrode a and the second driving electrode b in the first pixel unit 201 are adjusted, and the first driving electrode a and the second driving electrode b have the same voltage, and correspond to the refractive index n5. At the same time, the third driving electrode c and the fourth driving electrode d are adjusted, and have the same voltage, and correspond to the refractive index n6. At this time, the refractive index n5 is smaller than the refractive index n6, so that a total reflection surface is formed between two different refractive indices. When the light in the corresponding red light emitting layer in the first pixel unit 201 enters the refractive layer 700, it will be totally reflected inside, and then the propagation path of the light is changed, and enters the adjacent second pixel unit, and then the reflected light is totally reflected again in the refractive layer in the second pixel unit, and is emitted from the light emitting side of the second pixel unit. Therefore, in the embodiment of the present application, through the effect of the refraction layer, the red light in the red light emitting layer in a pixel unit is propagated to its adjacent pixel unit and emitted from the light emitting side of the pixel unit, thereby effectively increasing the brightness of the red pixels in the working pixel unit, and realizing the concentration of light in multiple red pixel units in a required red pixel unit. When the red pixel unit displays a dynamic image, its red pixel brightness can be significantly improved, and the goal of increasing the brightness of the white light of the display panel is achieved, thereby improving its display effect.

[0086] like Figure 8 As shown, Figure 8 FIG. 1 is a schematic diagram of light propagation of another display panel provided in an embodiment of the present application. Figure 6-Figure 7 As shown in the figure, in the embodiment of the present application, the corresponding driving electrodes in the refractive layer in the first pixel unit and the second pixel unit are adjusted respectively, and the voltages in the above-mentioned driving electrodes are made the same and have the same electric field. At this time, since the voltages in different regions of the refractive layer 700 are the same, the refractive indexes in different regions of the refractive layer 700 are the same. When the light in the bottom red light-emitting layer propagates into the refractive layer 700, the light can directly pass through the refractive layer and finally be emitted from the display panel. Therefore, in the embodiment of the present application, the refractive index of the photoelectric material layer 700 can be adjusted as needed to achieve different display purposes and display effects, thereby effectively improving the comprehensive performance of the panel.

[0087] Furthermore, in the embodiment of the present application, the display panel further includes a lens layer 901 and a third bonding layer 503, the third bonding layer 503 is disposed on the blue light-emitting layer 104, and the lens layer 901 is correspondingly disposed on the third bonding layer of each pixel unit. In the embodiment of the present application, the lens layer 901 is configured as an arc surface or other convex surface structure, and when light passes through the lens layer 901, its light output angle and the corresponding light output amount are effectively increased, thereby improving the light emission and display effect of the device.

[0088] In the embodiment of the present application, by adjusting the voltage on the driving electrode in the refractive layer in different pixel units, different refractive indices are formed in different areas. In this way, a high refractive index area and a low refractive index area are formed inside the refractive layer. When light passes through different areas, different effects are formed. Then, through the refractive layer, the red light in multiple pixel units is propagated to the same pixel unit, thereby effectively improving the pixel brightness of the red light in the working pixel unit and improving the white light brightness of the display panel.

[0089] Furthermore, when preparing the silicon-based display panel in the embodiment of the present application, Figure 9-11 As shown, Figure 9-11 This is a schematic diagram of the film layer corresponding to the preparation process provided in the embodiments of the present application. In the above schematic diagrams, the left side of each figure is a cross-sectional front view, and the right side is its corresponding side view.

[0090] Combination Figure 2-Figure 4 When preparing the silicon-based display panel, see Fig. 9 As shown, a substrate 991 is first provided, and a refractive layer 700 is formed on the substrate 991. Optionally, when forming the refractive layer 700, the refractive layer 700 may be etched as required and formed with a certain slope to adapt to different film structures and different display panels.

[0091] See Figure 10-11 In the embodiment, after the refractive layer 700 is set, a plurality of driving electrodes are set on two opposite sides of the refractive layer 700, such as a first driving electrode a, a second driving electrode b, a third driving electrode c and a fourth driving electrode d. Specifically, when setting, the plurality of driving electrodes can be set according to Fig.10 After the setting is completed, see Fig.11 , remove the substrate 991 at the bottom of the refractive layer 700, and form the refractive layer. When preparing the silicon-based display panel in the embodiment of the present application, the electro-optical structure group formed by the refractive layer can be directly set in the corresponding pixel unit, and finally form the display panel in the embodiment of the present application.

[0092] Furthermore, a semiconductor device is provided in an embodiment of the present application. When the semiconductor device is prepared, the semiconductor device includes the silicon-based display panel in the embodiment of the present application, and the silicon-based display panel is arranged according to the film layer structure in the embodiment of the present application, and the above-mentioned refractive layer is arranged and the propagation path of the light is changed, so as to effectively improve the light-emitting display effect and comprehensive performance of the semiconductor device.

[0093] In the embodiment of the present application, the silicon-based display panel and semiconductor device can be any product or component with display function or touch function, such as a mobile phone, a computer, an electronic paper, a display, etc., and its specific type is not specifically limited.

[0094] In summary, the above is a detailed introduction to a silicon-based display panel and a semiconductor device provided by an embodiment of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the technical solution and core ideas of the present invention. Although the present invention is disclosed as above in preferred embodiments, the above preferred embodiments are not intended to limit the present invention. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention is based on the scope defined by the claims.

Claims

1. A silicon-based display panel, characterized in that: It comprises a silicon-based circuit substrate and a light-emitting device arranged on the silicon-based circuit substrate, wherein the light-emitting device at least comprises: A first light-emitting layer is disposed on the silicon-based circuit substrate; A bonding layer, disposed on the first light-emitting layer; a second light-emitting layer, disposed on the bonding layer and electrically connected to the first light-emitting layer; and a refractive layer, disposed between the first light-emitting layer and the second light-emitting layer; The refraction layer includes a first sub-refractive portion and a second sub-refractive portion, the first sub-refractive portion and the second sub-refractive portion have different refractive indices, and the first sub-refractive portion and the second sub-refractive portion have an interface, and the interface is used to change the light emitted by the light-emitting layer so that the light propagates to the adjacent light-emitting device and is emitted from the light-emitting side.

2. The silicon-based display panel according to claim 1, characterized in that: The refraction layer further comprises a plurality of driving electrodes, which are correspondingly arranged on two opposite side surfaces of the refraction layer, and the driving electrodes on different sub-refractive parts are independently controlled.

3. The silicon-based display panel according to claim 2, characterized in that: The driving electrodes include a first driving electrode, a second driving electrode, a third driving electrode and a fourth driving electrode arranged on the first side, and a first driving electrode, a second driving electrode, a third driving electrode and a fourth driving electrode arranged on the second side, and the same driving electrodes on the first side and the second side are arranged opposite to each other.

4. The silicon-based display panel according to claim 3, characterized in that: The cross-sectional shapes of the first driving electrode, the second driving electrode, the third driving electrode and the fourth driving electrode are set to be triangular, and the different driving electrodes on the first side surface and the second side surface are spliced ​​and set to form a rectangular cross-section; The first driving electrode, the second driving electrode and the refractive layer form a first refractive region, the third driving electrode, the fourth driving electrode and the refractive layer form a second refractive region, and the refractive indexes in the first refractive region and the second refractive region are different.

5. The silicon-based display panel according to claim 4, characterized in that: The first driving electrode and the second driving electrode are arranged on the same side of the diagonal line of the rectangle, and the third driving electrode and the fourth driving electrode are arranged on the other side of the diagonal line of the rectangle; The first driving electrode and the second driving electrode have a first voltage, the third driving electrode and the fourth driving electrode have a second voltage, and the first voltage and the second voltage have different voltage values.

6. The silicon-based display panel according to claim 4, characterized in that: The light-emitting device includes a first light-emitting device and a second light-emitting device disposed on one side of the first light-emitting device, the first light-emitting device includes a first pixel unit, the second light-emitting device includes a second pixel unit, in the first pixel unit, the refractive layer in the region corresponding to the first driving electrode and the second driving electrode has a first refractive index, the electro-optical material in the region corresponding to the third driving electrode and the fourth driving electrode has a second refractive index, in the second pixel unit, the refractive layer in the region corresponding to the first driving electrode and the second driving electrode has a third refractive index, the electro-optical material in the region corresponding to the third driving electrode and the fourth driving electrode has a fourth refractive index; Among them, when the first pixel unit is lit and the second pixel unit is not lit, the area corresponding to the first refractive index is the first sub-refractive portion, the area corresponding to the second refractive index is the second sub-refractive portion, and the area corresponding to the third refractive index is the second sub-refractive portion, and the area corresponding to the fourth refractive index is the first sub-refractive portion, and the interface in the second pixel unit is used to totally reflect light into the refractive layer in the first pixel unit, and the first refractive index is less than the second refractive index, and the third refractive index is greater than the fourth refractive index.

7. The silicon-based display panel according to claim 1, characterized in that: The refractive index of the refractive layer is set to 2.15-2.

28.

8. The silicon-based display panel according to claim 1, characterized in that: The refractive layer includes any one of LiNbO3, LiTaO3, BaTiO3, and AlGaAs.

9. The silicon-based display panel according to claim 1, characterized in that: The silicon-based display panel further includes: a third light-emitting layer, the bonding layer includes a first bonding layer, a second bonding layer and a third bonding layer, when the first bonding layer is disposed on the first light-emitting layer, the second light-emitting layer is disposed on the first bonding layer, the second bonding layer is disposed on the second light-emitting layer, the third light-emitting layer is disposed on the second bonding layer, and the third bonding layer is disposed on the third light-emitting layer; The area of ​​the first light-emitting layer is larger than the area of ​​the second light-emitting layer and the third light-emitting layer on the side away from the silicon-based circuit substrate.

10. The silicon-based display panel according to claim 9, characterized in that: The first light-emitting layers corresponding to different pixel units are set to be the same layer.

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