Solar cell, preparation method of solar cell and photovoltaic system
By using a double-layer transparent electrode of zinc oxide-based TCO and indium oxide-based TCO in solar cells, the problem of high cost in a single-layer indium oxide-based TCO film is solved, and a solar cell with lower cost and good performance is achieved.
Patent Information
- Application Number
- CN202411327561.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-23
- Publication Date
- 2025-03-28
AI Technical Summary
In the prior art, the use of single-layer indium oxide-based TCO films in solar cells leads to high costs, limiting the widespread application of perovskite/crystalline silicon stacked solar cells.
A two-layer structure of zinc oxide-based TCO and indium oxide-based TCO is used as the transparent electrode, the first transparent conductive oxide layer is located near the base, and the second transparent conductive oxide layer is located away from the base.
By reducing dependence and use on expensive indium oxide-based materials, the production cost of solar cells is reduced while maintaining performance comparable to that of single-layer indium oxide-based transparent electrode devices.
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Figure CN119730544A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a solar cell, a method for preparing a solar cell, and a photovoltaic system. Background Art
[0002] Perovskite solar cells, as a new type of solar cell with great development potential, have attracted much attention since their first appearance. Among them, semi-transparent perovskite solar cells have attracted extensive attention and research because they have decorative effects while performing energy conversion, and perovskite / silicon two-terminal stacked solar cells have high photoelectric conversion efficiency. Transparent conductive oxide (TCO) films have broad application prospects in thin-film solar cells and other aspects due to their low resistivity and high transmittance in the visible light range. Especially in the field of perovskite solar cells, TCO films are an important part of the battery as transparent electrodes.
[0003] Among the numerous TCO films, indium oxide-based TCO films, such as ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWO (Indium Tungsten Oxide), etc., can effectively collect and transport carriers due to their excellent photoelectric properties. They are often used as the top electrodes of semi-transparent perovskite solar cells and perovskite / crystalline silicon stacked solar cells.
[0004] However, indium is an expensive rare metal. The use of indium oxide-based TCO films will lead to an increase in the large-scale industrial production cost of perovskite / crystalline silicon solar cells, greatly limiting the widespread application of perovskite / crystalline silicon tandem solar cells. Summary of the invention
[0005] The main purpose of the present application is to provide a solar cell, a method for preparing a solar cell and a photovoltaic system to solve the problem in the prior art that the solar cell uses a single-layer indium oxide-based TCO film, resulting in a high cost of the solar cell.
[0006] In order to achieve the above-mentioned purpose, according to one aspect of the present application, a solar cell is provided, which includes a substrate, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a transparent electrode stacked in sequence, and the transparent electrode includes: a first transparent conductive oxide layer, the material of the first transparent conductive oxide layer includes zinc oxide; a second transparent conductive oxide layer, located on the surface of the first transparent conductive oxide layer away from the substrate, and the material of the second transparent conductive oxide layer includes indium oxide.
[0007] Optionally, the transparent electrode further includes: a third transparent conductive oxide layer located on a surface of the first transparent conductive oxide layer close to the substrate, and a material of the third transparent conductive oxide layer includes indium oxide.
[0008] Optionally, the thickness of the first transparent conductive oxide layer is greater than the thickness of the second transparent conductive oxide layer.
[0009] Optionally, the thickness of the first transparent conductive oxide layer is greater than the thickness of the second transparent conductive oxide layer, and the thickness of the first transparent conductive oxide layer is greater than the thickness of the third transparent conductive oxide layer.
[0010] Optionally, the thickness of the first transparent conductive oxide layer is 20 nm-140 nm, and the thickness of the second transparent conductive oxide layer is 5 nm-20 nm.
[0011] Optionally, the thickness of the first transparent conductive oxide layer is 20 nm-140 nm, the thickness of the second transparent conductive oxide layer is 5 nm-20 nm, and the thickness of the third transparent conductive oxide layer is 3 nm-20 nm.
[0012] According to another aspect of the present application, a method for preparing any one of the solar cells is provided, the method comprising: providing a substrate; forming a first carrier transport layer on one side of the substrate; forming a perovskite layer on a surface of the first carrier transport layer away from the substrate; forming a second carrier transport layer on a surface of the perovskite layer away from the substrate; forming a transparent electrode on a surface of the second carrier transport layer away from the substrate, and forming a transparent electrode on a surface of the second carrier transport layer away from the substrate, comprising: forming a first transparent conductive oxide layer on a side of the second carrier transport layer away from the substrate, the material of the first transparent conductive oxide layer comprising zinc oxide; forming a second transparent conductive oxide layer on a surface of the first transparent conductive oxide layer away from the substrate, the material of the second transparent conductive oxide layer comprising indium oxide, the first transparent conductive oxide layer and the second transparent conductive oxide layer constituting the transparent electrode.
[0013] Optionally, after forming a second carrier transport layer on the surface of the perovskite layer away from the substrate, and before forming a first transparent conductive oxide layer on the side of the second carrier transport layer away from the substrate, the method further includes: forming a third transparent conductive oxide layer on the surface of the second carrier transport layer away from the substrate, the material of the third transparent conductive oxide layer including indium oxide, forming the first transparent conductive oxide layer on the side of the second carrier transport layer away from the substrate, including: forming the first transparent conductive oxide layer on the surface of the third transparent conductive oxide layer away from the substrate.
[0014] Optionally, forming a first transparent conductive oxide layer on a side of the second carrier transport layer facing away from the substrate includes: forming the first transparent conductive oxide layer on a side of the second carrier transport layer facing away from the substrate using a reactive plasma deposition technique.
[0015] Optionally, forming a third transparent conductive oxide layer on a surface of the second carrier transport layer away from the substrate includes: forming the third transparent conductive oxide layer on the surface of the second carrier transport layer away from the substrate using a reactive plasma deposition technique.
[0016] According to another aspect of the present application, a photovoltaic system is provided, comprising any one of the above-mentioned solar cells or a solar cell prepared by any one of the above-mentioned methods for preparing a solar cell.
[0017] Using the technical solution of the present application, the solar cell includes a substrate, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a transparent electrode stacked in sequence, wherein the transparent electrode includes a first transparent conductive oxide layer and a second transparent conductive oxide layer stacked in sequence, the second transparent conductive oxide layer is located on the surface of the first transparent conductive oxide layer away from the substrate, the material of the first transparent conductive oxide layer includes zinc oxide, and the material of the second transparent conductive oxide layer includes indium oxide. Compared with the problem of high cost of solar cells caused by using a single-layer indium oxide-based TCO film in the prior art, the present application uses a double-layer structure of zinc oxide-based TCO (first transparent conductive oxide layer) and indium oxide-based TCO (second transparent conductive oxide layer) as a transparent electrode, ensuring less dependence on and use of expensive indium oxide-based materials, thereby ensuring low production costs of solar cells, while also ensuring performance comparable to that of devices using a single-layer indium oxide-based transparent electrode, ensuring good performance of solar cells. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The drawings constituting part of the present application are used to provide a further understanding of the present application. The exemplary embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0019] Figure 1 A schematic cross-sectional structure diagram of a solar cell provided according to an embodiment of the present application is shown;
[0020] Figure 2 A schematic cross-sectional structure diagram of another solar cell provided according to an embodiment of the present application is shown;
[0021] Figure 3 A schematic flow chart of a method for preparing a solar cell provided according to an embodiment of the present application is shown.
[0022] Figure 4 A schematic flow chart of a method for preparing a transparent electrode in a solar cell provided according to an embodiment of the present application is shown.
[0023] The above drawings include the following reference numerals:
[0024] 10. Substrate; 11. First carrier transport layer; 12. Perovskite layer; 13. Second carrier transport layer; 14. Transparent electrode; 141. First transparent conductive oxide layer; 142. Second transparent conductive oxide layer; 15. Metal electrode layer; 16. Tunneling composite layer. DETAILED DESCRIPTION
[0025] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.
[0026] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.
[0027] It should be understood that when an element (such as a layer, film, region, or substrate) is described as being "on" another element, the element may be directly on the other element, or there may be intermediate elements. Moreover, in the specification and claims, when an element is described as being "connected" to another element, the element may be "directly connected" to the other element, or "connected" to the other element through a third element.
[0028] As introduced in the background technology, the prior art solar cells use a single-layer indium oxide-based TCO film, which results in a high cost of the solar cells. To solve the above problem, the embodiments of the present application provide a solar cell, a method for preparing a solar cell, and a photovoltaic system.
[0029] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.
[0030] The present application embodiment provides a solar cell, such as Figure 1 and Figure 2 As shown, the solar cell includes a substrate 10, a first carrier transport layer 11, a perovskite layer 12, a second carrier transport layer 13 and a transparent electrode 14 stacked in sequence, and the transparent electrode 14 includes: a first transparent conductive oxide layer 141, and the material of the first transparent conductive oxide layer 141 includes zinc oxide; a second transparent conductive oxide layer 142, which is located on the surface of the first transparent conductive oxide layer 141 away from the substrate, and the material of the second transparent conductive oxide layer 142 includes indium oxide.
[0031] Through the above embodiments, the solar cell includes a substrate, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a transparent electrode stacked in sequence, wherein the transparent electrode includes a first transparent conductive oxide layer and a second transparent conductive oxide layer stacked in sequence, the second transparent conductive oxide layer is located on the surface of the first transparent conductive oxide layer away from the substrate, the material of the first transparent conductive oxide layer includes zinc oxide, and the material of the second transparent conductive oxide layer includes indium oxide. Compared with the problem of high cost of solar cells caused by using a single-layer indium oxide-based TCO film in the prior art, the present application uses a double-layer structure of zinc oxide-based TCO (first transparent conductive oxide layer) and indium oxide-based TCO (second transparent conductive oxide layer) as a transparent electrode, ensuring less dependence on and use of expensive indium oxide-based materials, thereby ensuring low production costs of solar cells, while also ensuring performance comparable to that of a single-layer indium oxide-based transparent electrode device, ensuring good performance of solar cells.
[0032] Specifically, zinc oxide-based TCO: based on zinc oxide (ZnO), its conductivity is improved by doping (such as Al, Ga, In, etc.); indium oxide-based TCO: based on indium oxide (In2O3), its conductivity is improved by doping (Sn, Zr, H, etc.).
[0033] Specifically, the substrate is a crystalline silicon bottom cell.
[0034] Specifically, in an embodiment of the present application, the above-mentioned first carrier transport layer is a hole transport layer, and its material includes: at least one of NiO, MoO3, Cu2O, CuI, CuPc, CuSCN, redox graphene, PTAA, Spiro-OMeTAD, PEDOT:PSS, Ploy-TPD and polyvinyl carbazole (PVK); the above-mentioned second carrier transport layer is an electron transport layer, and its material includes: at least one of SnO2, ZnO, TiO2, PCBM and C60.
[0035] Specifically, in the embodiment of the present application, the material of the first transparent conductive oxide layer (zinc oxide-based TCO) includes: at least one of Al-doped ZnO, Ga-doped ZnO and In-doped ZnO; the material of the second transparent conductive oxide layer (indium oxide-based TCO) includes: at least one of IZO, ITO, ICO, IWO, IZrO and In2O3:H.
[0036] Specifically, in the embodiment of the present application, the first transparent conductive oxide layer (zinc oxide-based TCO) is the main body of the transparent electrode and occupies the main part, and the second transparent conductive oxide layer (indium oxide-based TCO) is very thin.
[0037] In other embodiments, Figure 1 and Figure 2 As shown, the solar cell further includes: a plurality of metal electrode layers 15 spaced apart in a predetermined direction, located on a portion of the surface of the transparent electrode 14 away from the substrate 10, wherein the predetermined direction is a direction perpendicular to the thickness of the substrate 10. In this embodiment, a good ohmic contact is formed between the second transparent conductive oxide layer and the metal electrode layer, which further ensures good optical and electrical properties of the solar cell and further promotes the transmission of carriers.
[0038] Specifically, the material of the metal electrode layer includes at least one of Au, Ag, Cu and Al.
[0039] In one alternative, Figure 2As shown, the transparent electrode 14 further includes: a third transparent conductive oxide layer 143, which is located on the surface of the first transparent conductive oxide layer 141 close to the substrate 10, and the material of the third transparent conductive oxide layer 143 includes an indium oxide base. In this embodiment, the transparent electrode further includes an indium oxide base located on the surface of the first transparent conductive oxide layer close to the substrate, and a good ohmic contact is formed between the third transparent conductive oxide layer and the second carrier transport layer, which further ensures that the optical and electrical properties of the solar cell are good, and further promotes the transport of carriers. In addition, the third transparent conductive oxide layer further blocks the contact between the first transparent conductive oxide layer and the perovskite layer, ensuring that the stability of the perovskite layer is good, thereby further ensuring that the stability of the solar cell is good.
[0040] Specifically, the material of the third transparent conductive oxide layer includes at least one of SnO2, ZnO, TiO2, PCBM and C60.
[0041] In other embodiments, the thickness of the first transparent conductive oxide layer is greater than the thickness of the second transparent conductive oxide layer. In this embodiment, the thickness of the first transparent conductive oxide layer is greater than the thickness of the second transparent conductive oxide layer, which further ensures that the conductivity and light transmittance of the transparent electrode are good, and further ensures that the dependence on and usage of indium oxide-based materials are small, and further ensures that the cost is low.
[0042] According to some exemplary embodiments of the present application, the thickness of the first transparent conductive oxide layer is greater than the thickness of the second transparent conductive oxide layer, and the thickness of the first transparent conductive oxide layer is greater than the thickness of the third transparent conductive oxide layer. In this embodiment, the thickness of the first transparent conductive oxide layer is greater than the thickness of the second transparent conductive oxide layer and the thickness of the third transparent conductive oxide layer, which further ensures that the conductivity and light transmittance of the transparent electrode are good, and further ensures that the dependence on and usage of indium oxide-based materials are less, and further ensures that the cost is low.
[0043] Specifically, in the embodiment of the present application, the thickness of the third transparent conductive oxide layer is less than the thickness of the second transparent conductive oxide layer.
[0044] According to some other exemplary embodiments of the present application, the thickness of the first transparent conductive oxide layer is 20nm-140nm, and the thickness of the second transparent conductive oxide layer is 5nm-20nm. In this embodiment, by setting a specific thickness range of the first transparent conductive oxide layer and the second transparent conductive oxide layer, the conductivity and light transmittance of the transparent electrode can be further ensured to be good, while further ensuring a low cost.
[0045] In some other optional solutions of the present application, the thickness of the first transparent conductive oxide layer is 20nm-140nm, the thickness of the second transparent conductive oxide layer is 5nm-20nm, and the thickness of the third transparent conductive oxide layer is 3nm-20nm. In this embodiment, by setting a specific thickness range of the first transparent conductive oxide layer, the second transparent conductive oxide layer and the third transparent conductive oxide layer, the conductivity and light transmittance of the transparent electrode are further guaranteed to be good, and the cost is further guaranteed to be low.
[0046] In other embodiments, Figure 1 and Figure 2 As shown, the solar cell further includes: a tunneling composite layer 16, located between the substrate 10 and the first carrier transport layer 11. In this embodiment, the tunneling composite layer can promote the effective injection of electrons and holes, ensuring that the first carrier transport layer has a high collection efficiency of carriers, thereby further ensuring the overall performance of the solar cell is good.
[0047] Specifically, the material of the tunneling composite layer includes: at least one of indium zinc oxide (IZO), indium tin oxide (ITO), indium hydroxide-doped (In2O3:H), aluminum-doped zinc oxide (AZO), zirconium-doped indium oxide (IZrO), zinc-doped tin oxide (ZTO), a-Si and nc-Si.
[0048] Figure 3 FIG. 1 is a flow chart of a method for preparing a solar cell according to an embodiment of the present application. Figure 3 As shown, the method comprises the following steps:
[0049] Step S101, as Figure 1 and Figure 2 As shown, a substrate 10 is provided;
[0050] Step S102, as Figure 1 and Figure 2 As shown, a first carrier transport layer 11 is formed on one side of the substrate 10;
[0051] Step S103, as Figure 1 and Figure 2 As shown, a perovskite layer 12 is formed on the surface of the first carrier transport layer 11 away from the substrate 10;
[0052] Step S104, as Figure 1 and Figure 2 As shown, a second carrier transport layer 13 is formed on the surface of the perovskite layer 12 away from the substrate 10;
[0053] Step S105, as Figure 1 and Figure 2As shown, a transparent electrode 14 is formed on the surface of the second carrier transport layer 13 away from the substrate 10.
[0054] Figure 4 is a flow chart of a method for preparing a transparent electrode in a solar cell according to an embodiment of the present application, such as Figure 4 As shown, step S105 includes: step S1051: Figure 1 and Figure 2 As shown, a first transparent conductive oxide layer 141 is formed on the side of the second carrier transport layer 13 away from the substrate 10, and the material of the first transparent conductive oxide layer 141 includes zinc oxide; step S1052: as Figure 1 and Figure 2 As shown, a second transparent conductive oxide layer 142 is formed on the surface of the first transparent conductive oxide layer 141 away from the substrate 10 , and the material of the second transparent conductive oxide layer 142 includes indium oxide. The first transparent conductive oxide layer 141 and the second transparent conductive oxide layer 142 constitute the transparent electrode 14 .
[0055] Through this embodiment, a substrate is first provided, and then a first carrier transport layer, a perovskite layer and a second carrier transport layer are sequentially formed on one side of the substrate, and then a first transparent conductive oxide layer and a second transparent conductive oxide layer are sequentially formed on the side of the second carrier transport layer away from the substrate, and the first transparent conductive oxide layer and the second transparent conductive oxide layer constitute a transparent electrode, wherein the material of the first transparent conductive oxide layer includes a zinc oxide-based material, and the material of the second transparent conductive oxide layer includes an indium oxide-based material. Compared with the problem of high cost of solar cells caused by the use of a single-layer indium oxide-based TCO film in the prior art, the present application uses a double-layer structure of zinc oxide-based TCO (first transparent conductive oxide layer) and indium oxide-based TCO (second transparent conductive oxide layer) as a transparent electrode, ensuring less dependence on and use of expensive indium oxide-based materials, thereby ensuring a low production cost of solar cells, while also ensuring performance comparable to that of a single-layer indium oxide-based transparent electrode device, ensuring good performance of solar cells.
[0056] In some optional schemes of the present application, after forming the second carrier transport layer on the surface of the perovskite layer away from the substrate, and before forming the first transparent conductive oxide layer on the side of the second carrier transport layer away from the substrate, the method further includes: Figure 2As shown, a third transparent conductive oxide layer 143 is formed on the surface of the second carrier transport layer 13 away from the substrate 10, and the material of the third transparent conductive oxide layer 143 includes indium oxide. A first transparent conductive oxide layer 141 is formed on the side of the second carrier transport layer 13 away from the substrate 10, including: forming the first transparent conductive oxide layer 141 on the surface of the third transparent conductive oxide layer 143 away from the substrate 10. In this embodiment, the third transparent conductive oxide layer is first formed on the surface of the second carrier transport layer away from the substrate, and then the first transparent conductive oxide layer is formed on the surface of the third transparent conductive oxide layer away from the substrate, so that a good ohmic contact is formed between the second transparent conductive oxide layer and the metal electrode layer, further ensuring good optical and electrical properties of the solar cell, and further promoting the transport of carriers.
[0057] In some other optional schemes of the present application, a first transparent conductive oxide layer is formed on the side of the second carrier transport layer away from the substrate, including: using reactive plasma deposition technology to form the first transparent conductive oxide layer on the side of the second carrier transport layer away from the substrate. In this embodiment, the first transparent conductive oxide layer is formed by reactive plasma deposition technology. Compared with the problem that solar cells in the prior art need to use ALD (Atomic Layer Deposition) technology to prepare SnO2 buffer layers to resist sputtering damage of the perovskite layer, resulting in high production costs of solar cells, the first transparent conductive oxide layer is formed by using reactive plasma deposition technology in the present application, and there is no need to prepare SnO2 buffer layers, further ensuring low production costs.
[0058] Specifically, the reactive plasma deposition technology is the RPD (Reaction Plasma Deposition) technology.
[0059] Specifically, a reaction gas (H2 or O2) is introduced during the deposition process of the first transparent conductive oxide layer using the reactive plasma deposition technique to passivate the defect states inside the zinc oxide-based TCO film and improve the photoelectric properties of the material.
[0060] Specifically, in Figure 1 In the solar cell shown, the second transparent conductive oxide layer 142 can be prepared by RPD, magnetron sputtering, ALD, spin coating, vacuum thermal evaporation and other techniques, and the present application does not impose any specific limitation on this.
[0061] In some other optional schemes of the present application, a third transparent conductive oxide layer is formed on the surface of the second carrier transport layer away from the substrate, comprising: using a reactive plasma deposition technique to form the third transparent conductive oxide layer on the surface of the second carrier transport layer away from the substrate. In this embodiment, the third transparent conductive oxide layer is formed using a reactive plasma deposition technique. Compared with the prior art in which solar cells need to use an ALD technique to prepare a SnO2 buffer layer to resist sputtering damage to the perovskite layer, resulting in a high production cost of solar cells, the present application uses a reactive plasma deposition technique to form the third transparent conductive oxide layer, and no longer needs to prepare a SnO2 buffer layer, further ensuring a low preparation cost.
[0062] Specifically, the industry currently widely uses magnetron sputtering to prepare indium oxide-based TCO films. During the sputtering process, certain sputtering damage will be caused to the perovskite absorption layer on the substrate, so ALD technology is generally used to prepare a dense SnO2 buffer layer to resist sputtering ion damage. However, the ALD technology has a long process time for preparing SnO2, which will lengthen the production cycle of the battery, and the ALD equipment is expensive, which increases its production cost. The present application uses reactive plasma deposition technology to form the first transparent conductive oxide layer, and there is no need to use ALD technology to prepare the SnO2 buffer layer to resist sputtering ion damage, thereby further ensuring a low preparation cost and a short preparation time.
[0063] Specifically, in Figure 2 In the solar cell shown, the second transparent conductive oxide layer 142 and the first transparent conductive oxide layer 141 can be prepared by RPD, magnetron sputtering, ALD, spin coating, vacuum thermal evaporation and other techniques, and the present application does not impose any specific limitation on this.
[0064] The following will be combined with specific examples and comparative examples to specifically illustrate the method for preparing the above-mentioned solar cell of the present application. Among them, the comparative example is a method for preparing a transparent electrode in a solar cell in the prior art, and Examples 1 to 8 are methods for preparing a transparent electrode in a solar cell provided by the present application, wherein Examples 1 to 7 prepare Figure 1 The transparent electrode in Example 8 is Figure 2 The transparent electrode in.
[0065] Comparative Example
[0066] The IZO transparent electrode was prepared on the SnO2 buffer layer by using a magnetron sputtering instrument: the reaction chamber of the magnetron sputtering instrument was evacuated before sputtering, and the vacuum degree was less than 1×10 -4Pa, argon gas is introduced into the reaction chamber with a flow rate of 80sccm, the pressure of the reaction chamber is maintained at 0.25Pa, the temperature in the reaction chamber is room temperature, 0.8sccm of O2 is introduced, and after the chamber pressure is stable, a DC power supply is connected, and 35W of DC power is applied to the IZO target to deposit a 100nm thick IZO film on the surface of the SnO2 buffer layer of the battery substrate as a transparent electrode.
[0067] Example 1
[0068] 1) Use RPD equipment to directly prepare GZO:H (first transparent conductive oxide layer) with a thickness of 80nm on the second carrier transport layer: evacuate the PRD equipment to 1×10 -4 Pa, then argon and hydrogen are introduced into the reaction chamber, the argon flow rate is 100 sccm, the hydrogen flow rate is 3.5 sccm, the reaction chamber pressure is maintained at 0.4 Pa, and the discharge current of the plasma gun is 120 A;
[0069] 2) Prepare ITO (second transparent conductive oxide layer) with a thickness of 20 nm on GZO:H using RPD equipment: evacuate the PRD equipment to 1×10 -4 Pa, then argon and oxygen are introduced into the reaction chamber, the argon flow rate is 75 sccm, the oxygen flow rate is 7.5 sccm, the reaction chamber pressure is maintained at 0.3 Pa, and the discharge current of the plasma gun is 100A.
[0070] Example 2
[0071] 1) Use RPD equipment to directly prepare GZO:O2 (first transparent conductive oxide layer) with a thickness of 80nm on the second carrier transport layer: evacuate the PRD equipment to 1×10 -4 Pa, then argon and oxygen are introduced into the reaction chamber, the argon flow rate is 90 sccm, the oxygen flow rate is 5.5 sccm, the reaction chamber pressure is maintained at 0.38 Pa, and the discharge current of the plasma gun is 120 A;
[0072] 2) Prepare ITO (second transparent conductive oxide layer) with a thickness of 20 nm on GZO:H using RPD equipment: evacuate the PRD equipment to 1×10 -4 Pa, then argon and oxygen are introduced into the reaction chamber, the argon flow rate is 75 sccm, the oxygen flow rate is 7.5 sccm, the reaction chamber pressure is maintained at 0.3 Pa, and the discharge current of the plasma gun is 100A.
[0073] Example 3
[0074] 1) Use RPD equipment to directly prepare GZO:H (first transparent conductive oxide layer) with a thickness of 80nm on the second carrier transport layer: evacuate the PRD equipment to 1×10 -4 Pa, then argon and hydrogen are introduced into the reaction chamber, the argon flow rate is 100 sccm, the hydrogen flow rate is 3.5 sccm, the reaction chamber pressure is maintained at 0.4 Pa, and the discharge current of the plasma gun is 120 A;
[0075] 2) Prepare IZO (second transparent conductive oxide layer) with a thickness of 20 nm on GZO:H by using magnetron sputtering equipment: evacuate the reaction chamber of the magnetron sputtering equipment before sputtering, and keep the vacuum degree below 1×10 -4 Pa, argon gas is introduced into the reaction chamber with a flow rate of 80sccm, the pressure in the reaction chamber is maintained at 0.25Pa, the temperature in the reaction chamber is room temperature, 0.8sccm of O2 is introduced, and after the chamber pressure is stable, a DC power supply is connected, and a DC power of 35W is applied to the IZO target to deposit a 100nm thick IZO film on the surface of the first transparent conductive oxide layer (GZO:H) of the battery substrate.
[0076] Example 4
[0077] 1) Use RPD equipment to directly prepare GZO:H (first transparent conductive oxide layer) with a thickness of 80nm on the second carrier transport layer: evacuate the PRD equipment to 1×10 -4 Pa, then argon and hydrogen are introduced into the reaction chamber, the argon flow rate is 100 sccm, the hydrogen flow rate is 3.5 sccm, the reaction chamber pressure is maintained at 0.4 Pa, and the discharge current of the plasma gun is 120 A;
[0078] 2) Prepare IZrO (second transparent conductive oxide layer) with a thickness of 20 nm on GZO:H using RPD equipment: evacuate the PRD equipment to 1×10 -4 Pa, then argon and oxygen are introduced into the reaction chamber, the argon flow rate is 75 sccm, the oxygen flow rate is 7.5 sccm, the reaction chamber pressure is maintained at 0.3 Pa, and the discharge current of the plasma gun is 100A.
[0079] Example 5
[0080] 1) Use RPD equipment to directly prepare GZO:H (first transparent conductive oxide layer) with a thickness of 80nm on the second carrier transport layer: evacuate the PRD equipment to 1×10 -4Pa, then argon and hydrogen are introduced into the reaction chamber, the argon flow rate is 100 sccm, the hydrogen flow rate is 3.5 sccm, the reaction chamber pressure is maintained at 0.4 Pa, and the discharge current of the plasma gun is 120 A;
[0081] 2) Prepare IWO (second transparent conductive oxide layer) with a thickness of 20 nm on GZO:H using RPD equipment: evacuate the PRD equipment to 1×10 -4 Pa. Then, argon and oxygen were introduced into the reaction chamber, with the argon flow rate of 75 sccm and the oxygen flow rate of 5.1 sccm. The reaction chamber pressure was maintained at 0.3 Pa, and the discharge current of the plasma gun was 100 A.
[0082] Example 6
[0083] 1) Use RPD equipment to directly prepare GZO:H (first transparent conductive oxide layer) with a thickness of 80nm on the second carrier transport layer: evacuate the PRD equipment to 1×10 -4 Pa, then argon and hydrogen are introduced into the reaction chamber, the argon flow rate is 100 sccm, the hydrogen flow rate is 3.5 sccm, the reaction chamber pressure is maintained at 0.4 Pa, and the discharge current of the plasma gun is 120 A;
[0084] 2) Use RPD equipment to prepare ICO (second transparent conductive oxide layer) with a thickness of 20nm on GZO:H: vacuum the PRD equipment to 1×10 -4 Pa, then argon and oxygen are introduced into the reaction chamber, the argon flow rate is 75 sccm, the oxygen flow rate is 4.4 sccm, the reaction chamber pressure is maintained at 0.3 Pa, and the discharge current of the plasma gun is 120A.
[0085] Example 7
[0086] 1) Use RPD equipment to directly prepare AZO (first transparent conductive oxide layer) with a thickness of 60nm on the second carrier transport layer: evacuate the PRD equipment to 1×10 -4 Pa, then argon and oxygen are introduced into the reaction chamber, the argon flow rate is 75 sccm, the oxygen flow rate is 3.5 sccm, the reaction chamber pressure is maintained at 0.3 Pa, and the discharge current of the plasma gun is 80 A;
[0087] 2) Prepare IZO (second transparent conductive oxide layer) with a thickness of 40 nm on AZO using magnetron sputtering equipment: evacuate the reaction chamber of the magnetron sputtering equipment before sputtering, and keep the vacuum degree below 1×10 -4Pa, argon gas is introduced into the reaction chamber with a flow rate of 80sccm, the pressure in the reaction chamber is maintained at 0.25Pa, the temperature in the reaction chamber is room temperature, 0.8sccm of O2 is introduced, and after the chamber pressure is stable, a DC power supply is connected, and a DC power of 35W is applied to the IZO target to deposit a 100nm thick IZO film on the surface of the first transparent conductive oxide layer (GZO:H) of the battery substrate.
[0088] Example 8
[0089] 1) Use RPD equipment to directly prepare ICO (third transparent conductive oxide layer) with a thickness of 20nm on the carrier transport layer: vacuum the PRD equipment to 1×10 -4 Pa, then argon and oxygen are introduced into the reaction chamber, the argon flow rate is 75 sccm, the oxygen flow rate is 4.4 sccm, the reaction chamber pressure is maintained at 0.3 Pa, and the discharge current of the plasma gun is 120 A;
[0090] 2) Prepare GZO:H (first transparent conductive oxide layer) with a thickness of 60nm on ICO using RPD equipment: evacuate the PRD equipment to 1×10 -4 Pa, then argon and hydrogen are introduced into the reaction chamber, the argon flow rate is 100 sccm, the hydrogen flow rate is 3.5 sccm, the reaction chamber pressure is maintained at 0.4 Pa, and the discharge current of the plasma gun is 120 A;
[0091] 3) Use RPD equipment to directly prepare ICO (second transparent conductive oxide layer) with a thickness of 20nm on the carrier transport layer: evacuate the PRD equipment to 1×10 -4 Pa, then argon and oxygen are introduced into the reaction chamber, the argon flow rate is 75 sccm, the oxygen flow rate is 4.4 sccm, the reaction chamber pressure is maintained at 0.3 Pa, and the discharge current of the plasma gun is 120A.
[0092] The performance test results of the solar cells containing transparent electrodes prepared by the comparative example and Examples 1 to 8 are shown in Table 1:
[0093] Table 1
[0094]
[0095] It can be seen from Table 1 that the solar cells using zinc oxide-based TCO / indium oxide-based TCO films as transparent electrodes (Examples 1 to 7) and the solar cells using indium oxide-based TCO / zinc oxide-based TCO / indium oxide-based TCO films as transparent electrodes (Example 8) have conversion efficiencies comparable to those of devices using a single-layer indium oxide-based transparent electrode (Comparative Example).
[0096] An embodiment of the present application further provides a photovoltaic system, comprising any one of the above-mentioned solar cells or a solar cell prepared by any one of the above-mentioned methods for preparing a solar cell.
[0097] In the above embodiment, the photovoltaic system includes a solar cell or a solar cell prepared by a method for preparing a solar cell, wherein the solar cell includes a substrate, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a transparent electrode stacked in sequence, wherein the transparent electrode includes a first transparent conductive oxide layer and a second transparent conductive oxide layer stacked in sequence, the second transparent conductive oxide layer is located on the surface of the first transparent conductive oxide layer away from the substrate, the material of the first transparent conductive oxide layer includes zinc oxide, and the material of the second transparent conductive oxide layer includes indium oxide. Compared with the problem of high cost of solar cells caused by using a single-layer indium oxide-based TCO film in the prior art, the present application uses a double-layer structure of zinc oxide-based TCO (first transparent conductive oxide layer) and indium oxide-based TCO (second transparent conductive oxide layer) as a transparent electrode, which ensures less dependence on and use of expensive indium oxide-based materials, thereby ensuring low production costs of solar cells, while also ensuring performance comparable to that of devices using a single-layer indium oxide-based transparent electrode, ensuring good performance of solar cells.
[0098] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:
[0099] 1) In the solar cell of the present application, the solar cell includes a substrate, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a transparent electrode stacked in sequence, wherein the transparent electrode includes a first transparent conductive oxide layer and a second transparent conductive oxide layer stacked in sequence, the second transparent conductive oxide layer is located on the surface of the first transparent conductive oxide layer away from the substrate, the material of the first transparent conductive oxide layer includes zinc oxide, and the material of the second transparent conductive oxide layer includes indium oxide. Compared with the problem of high cost of solar cells caused by using a single-layer indium oxide-based TCO film in the prior art, the present application uses a double-layer structure of zinc oxide-based TCO (first transparent conductive oxide layer) and indium oxide-based TCO (second transparent conductive oxide layer) as a transparent electrode, which ensures less dependence on and use of expensive indium oxide-based materials, thereby ensuring a low production cost of solar cells, while also ensuring performance equivalent to that of a single-layer indium oxide-based transparent electrode device, ensuring good performance of solar cells.
[0100] 2) In the preparation method of the solar cell of the present application, a substrate is first provided, and then a first carrier transport layer, a perovskite layer and a second carrier transport layer are sequentially formed on one side of the substrate, and then a first transparent conductive oxide layer and a second transparent conductive oxide layer are sequentially formed on the side of the second carrier transport layer away from the substrate, and the first transparent conductive oxide layer and the second transparent conductive oxide layer constitute a transparent electrode, wherein the material of the first transparent conductive oxide layer includes zinc oxide, and the material of the second transparent conductive oxide layer includes indium oxide. Compared with the problem of high cost of solar cells caused by the use of a single-layer indium oxide-based TCO film in the prior art, the present application uses a double-layer structure of zinc oxide-based TCO (first transparent conductive oxide layer) and indium oxide-based TCO (second transparent conductive oxide layer) as a transparent electrode, which ensures less dependence on and use of expensive indium oxide-based materials, thereby ensuring a low production cost of solar cells, while also ensuring performance equivalent to that of a single-layer indium oxide-based transparent electrode device, ensuring good performance of solar cells.
[0101] 3) In the photovoltaic system of the present application, the photovoltaic system includes a solar cell or a solar cell prepared by a method for preparing a solar cell, wherein the solar cell includes a substrate, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a transparent electrode stacked in sequence, wherein the transparent electrode includes a first transparent conductive oxide layer and a second transparent conductive oxide layer stacked in sequence, the second transparent conductive oxide layer is located on the surface of the first transparent conductive oxide layer away from the substrate, the material of the first transparent conductive oxide layer includes a zinc oxide base, and the material of the second transparent conductive oxide layer includes an indium oxide base. Compared with the problem of high cost of solar cells caused by the use of a single-layer indium oxide-based TCO film in the prior art, the present application uses a double-layer structure of zinc oxide-based TCO (first transparent conductive oxide layer) and indium oxide-based TCO (second transparent conductive oxide layer) as a transparent electrode, which ensures less dependence on and use of expensive indium oxide-based materials, thereby ensuring a low production cost of solar cells, while also ensuring performance equivalent to that of a single-layer indium oxide-based transparent electrode device, ensuring good performance of solar cells.
[0102] The above description is only the preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims
1. A solar cell, characterized in that: The solar cell comprises a substrate, a first carrier transport layer, a perovskite layer, a second carrier transport layer and a transparent electrode which are stacked in sequence. The transparent electrode comprises: a first transparent conductive oxide layer, the material of which comprises zinc oxide; and a second transparent conductive oxide layer, which is located on a surface of the first transparent conductive oxide layer away from the substrate, the material of which comprises indium oxide.
2. The solar cell according to claim 1, characterized in that: The transparent electrode further comprises: The third transparent conductive oxide layer is located on the surface of the first transparent conductive oxide layer close to the substrate, and the material of the third transparent conductive oxide layer includes indium oxide.
3. The solar cell according to claim 1, characterized in that The thickness of the first transparent conductive oxide layer is greater than the thickness of the second transparent conductive oxide layer.
4. The solar cell according to claim 2, characterized in that: The thickness of the first transparent conductive oxide layer is greater than that of the second transparent conductive oxide layer, and the thickness of the first transparent conductive oxide layer is greater than that of the third transparent conductive oxide layer.
5. The solar cell according to claim 1, characterized in that: The thickness of the first transparent conductive oxide layer is 20 nm-140 nm, and the thickness of the second transparent conductive oxide layer is 5 nm-20 nm.
6. The solar cell according to claim 2, characterized in that: The thickness of the first transparent conductive oxide layer is 20 nm-140 nm, the thickness of the second transparent conductive oxide layer is 5 nm-20 nm, and the thickness of the third transparent conductive oxide layer is 3 nm-20 nm.
7. A method for preparing a solar cell according to any one of claims 1 to 6, characterized in that: The method comprises: providing a substrate; forming a first carrier transport layer on one side of the substrate; forming a perovskite layer on a surface of the first carrier transport layer away from the substrate; forming a second carrier transport layer on a surface of the perovskite layer away from the substrate; forming a transparent electrode on a surface of the second carrier transport layer away from the substrate, A transparent electrode is formed on a surface of the second carrier transport layer away from the substrate, comprising: forming a first transparent conductive oxide layer on a side of the second carrier transport layer away from the substrate, wherein the material of the first transparent conductive oxide layer includes zinc oxide; forming a second transparent conductive oxide layer on a surface of the first transparent conductive oxide layer away from the substrate, wherein the material of the second transparent conductive oxide layer includes indium oxide, and the first transparent conductive oxide layer and the second transparent conductive oxide layer constitute the transparent electrode.
8. The method for preparing a solar cell according to claim 7, characterized in that: After forming a second carrier transport layer on a surface of the perovskite layer away from the substrate, and before forming a first transparent conductive oxide layer on a side of the second carrier transport layer away from the substrate, the method further comprises: forming a third transparent conductive oxide layer on a surface of the second carrier transport layer away from the substrate, wherein the material of the third transparent conductive oxide layer comprises an indium oxide-based Forming a first transparent conductive oxide layer on a side of the second carrier transport layer away from the substrate includes: forming the first transparent conductive oxide layer on a surface of the third transparent conductive oxide layer away from the substrate.
9. The method for preparing a solar cell according to claim 7, characterized in that: Forming a first transparent conductive oxide layer on a side of the second carrier transport layer away from the substrate comprises: The first transparent conductive oxide layer is formed on the side of the second carrier transport layer facing away from the substrate by using reactive plasma deposition technology.
10. The method for preparing a solar cell according to claim 8, characterized in that: Forming a third transparent conductive oxide layer on a surface of the second carrier transport layer away from the substrate comprises: The third transparent conductive oxide layer is formed on a surface of the second carrier transport layer away from the substrate by using a reactive plasma deposition technique.
11. A photovoltaic system, characterized in that: A solar cell comprising the solar cell according to any one of claims 1 to 6 or a solar cell prepared by the method for preparing a solar cell according to any one of claims 7 to 10.