Display device

Abstract

There is provided a display device including: a light emitting element layer disposed on a substrate; a thin film encapsulation layer disposed on the light emitting element layer; a wavelength conversion layer disposed on the thin film encapsulation layer and including a bank defining a light emitting region and a non-light emitting region; a dam structure disposed on the wavelength conversion layer and overlapping at least one of the light emitting regions; a filling layer disposed on the wavelength conversion layer and disposed between portions of the dam structure; a color filter layer disposed on the dam structure; and a counter substrate disposed on the color filter layer, in which the filling layer overlaps a light emitting region of the light emitting regions that does not overlap the dam structure.

Description

Technical Field

[0001] The disclosure relates to a display device. Background Art

[0002] As the information society develops, the demand for display devices for displaying images is increasing in various forms. For example, display devices are applied to various electronic devices such as smart phones, digital cameras, notebook computers, navigation devices, and smart TVs.

[0003] The display device may be a flat panel display device such as a liquid crystal display device, a field emission display device, and a light-emitting display device. The light-emitting display device may include an organic light-emitting display device including an organic light-emitting element, an inorganic light-emitting display device including an inorganic light-emitting element such as an inorganic semiconductor, and a micro light-emitting display device including a micro light-emitting element.

[0004] The organic light emitting element may include two electrodes facing each other and a light emitting layer disposed between the two electrodes. The light emitting layer may receive electrons and holes from the two electrodes, recombine them to generate excitons, and emit light when the generated excitons transition from an excited state to a ground state.

[0005] Since organic light emitting display devices including organic light emitting elements do not require a light source such as a backlight part, they can be low in power consumption, can be made light and thin, and have a wide viewing angle, high brightness and contrast, and a fast response speed. Due to these high-quality characteristics, organic light emitting display devices are attracting attention as next-generation display devices. Summary of the invention

[0006] The disclosed aspects provide a display device having improved front-to-side brightness ratio and white efficiency.

[0007] However, aspects of the disclosure may not be limited to the aspects set forth herein. The above and other aspects of the disclosure will become more apparent to those skilled in the art to which the disclosure pertains by referring to the detailed description of the disclosure given below.

[0008] According to the disclosed aspects, a display device may include: a light-emitting element layer disposed on a substrate; a thin-film encapsulation layer disposed on the light-emitting element layer; a wavelength conversion layer disposed on the thin-film encapsulation layer and including a dam, the dam defining a plurality of light-emitting regions and a non-light-emitting region; a dam structure disposed on the wavelength conversion layer and overlapping with at least one of the plurality of light-emitting regions; a filling layer disposed on the wavelength conversion layer and between portions of the dam structure; a color filter layer disposed on the dam structure; and a counter substrate disposed on the color filter layer, wherein the filling layer overlaps with a light-emitting region of the plurality of light-emitting regions that is not overlapped with the dam structure.

[0009] In an embodiment, at least one light emitting region among the plurality of light emitting regions overlapping the dam structure may have a light conversion rate of about 50% or less in the wavelength conversion layer.

[0010] In an embodiment, the plurality of light emitting regions may include a first light emitting region emitting blue light, a second light emitting region emitting red light, and a third light emitting region emitting green light, and the dam structure may overlap the first light emitting region.

[0011] In an embodiment, the filling layer may overlap the second light emitting region and the third light emitting region.

[0012] In embodiments, the dam structure may not overlap the non-light emitting region.

[0013] In an embodiment, the dam structure may overlap with a portion adjacent to at least one light-emitting region overlapped with the dam structure in the same plurality of light-emitting regions of the non-light-emitting region, and may not overlap with a portion separated from at least one light-emitting region overlapped with the dam structure in the same plurality of light-emitting regions of the non-light-emitting region.

[0014] In an embodiment, the dam structure may overlap the non-light emitting region.

[0015] In an embodiment, the refractive index of the dam structure may be greater than the refractive index of the filling layer.

[0016] In an embodiment, the refractive index of the dam structure may be in a range from about 1.5 to about 2.

[0017] In an embodiment, the refractive index of the filler layer may be in a range from about 1.05 to about 1.4.

[0018] In an embodiment, the thickness of the dam structure may be less than or equal to the thickness of the filling layer.

[0019] In an embodiment, the thickness of the dam structure and the thickness of the filling layer may both be in a range of about 0.1 μm to about 4.5 μm.

[0020] In an embodiment, the color filter layer may include a plurality of color filters and an overcoat layer covering the plurality of color filters, and the dam structure and the filling layer may contact the overcoat layer.

[0021] In an embodiment, the wavelength conversion layer may include a light-transmitting pattern overlapping the dam structure, and first and second wavelength conversion patterns overlapping the filling layer.

[0022] In an embodiment, the filling layer may overlap the plurality of light emitting regions and may cover the dam structure.

[0023] In embodiments, the filling layer may contact the color filter layer, and the dam structure may be spaced apart from the color filter layer.

[0024] In an embodiment, the filling layer may include an arrangement selected from at least one of a vacuum, nitrogen and an inert gas, a plurality of filling particles dispersed in a filling resin, and a siloxane compound.

[0025] According to the disclosed aspects, a display device may include: a light emitting element layer disposed on a substrate; a thin film encapsulation layer disposed on the light emitting element layer; a wavelength conversion layer disposed on the thin film encapsulation layer and including a dam, the dam defining a plurality of light emitting regions and a non-light emitting region; a dam structure disposed on the wavelength conversion layer and overlapping with a light emitting region having a light conversion efficiency of about 50% or less in the wavelength conversion layer among the plurality of light emitting regions; a filling layer disposed on the wavelength conversion layer and disposed between portions of the dam structure; a color filter layer disposed on the dam structure; and a counter substrate disposed on the color filter layer.

[0026] In an embodiment, the plurality of light emitting regions may include a first light emitting region emitting blue light, a second light emitting region emitting red light, and a third light emitting region emitting green light, and the dam structure may overlap the first light emitting region.

[0027] In an embodiment, the plurality of light emitting regions may include a first light emitting region emitting blue light, a second light emitting region emitting red light, a third light emitting region emitting green light, and a fourth light emitting region emitting white light, and the dam structure may overlap the fourth light emitting region.

[0028] In an embodiment, the taper angle of the dam structure may be in a range from about 20 degrees to about 170 degrees.

[0029] In an embodiment, an area of ​​an upper surface of the dam structure may be in a range of about 60% to about 1000% of an area of ​​a lower surface of the dam structure.

[0030] According to the disclosed aspects, a display device may include: a light emitting element layer disposed on a substrate; a thin film encapsulation layer disposed on the light emitting element layer; a wavelength conversion layer disposed on the thin film encapsulation layer; a filling layer disposed on the wavelength conversion layer; a color filter layer disposed on the filling layer; and a counter substrate disposed on the color filter layer, wherein the refractive index of the filling layer may be in the range of about 1.05 to about 1.4, and the thickness of the filling layer may be in the range of about 0.1 μm to about 4.5 μm.

[0031] In an embodiment, the filling layer may be disposed between the wavelength conversion layer and the color filter layer, and may contact each of the wavelength conversion layer and the color filter layer.

[0032] In an embodiment, the filling layer may include a silicone compound or a plurality of filling particles dispersed in a filling resin.

[0033] The display device according to the embodiment may include a filling layer having a low refractive index between the wavelength conversion layer and the color filter layer. Therefore, it is possible to improve the front-side brightness ratio of the display device and prevent the reduction of the front brightness efficiency.

[0034] The display device according to the embodiment may include a dam structure having a high refractive index in a light emitting region having a light conversion rate of about 50% or less, thereby being able to improve the front-side brightness ratio of the light emitting region and maintaining the gap between the substrate and the counter substrate.

[0035] However, the effects of the disclosure may not be limited to the effects set forth herein. The above and other effects of the disclosure will become more apparent to those of ordinary skill in the art to which the disclosure pertains by referring to the claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] These and / or other aspects will become apparent and more readily understood through the following description of embodiments taken in conjunction with the accompanying drawings, in which: Figure 1 is a plan view of a display device according to an embodiment; Figure 2 is a schematic layout diagram showing lines included in a display device according to an embodiment; Figure 3 is a schematic diagram of an equivalent circuit of a sub-pixel according to an embodiment; Figure 4 is a schematic cross-sectional view of a display device according to an embodiment; Figure 5 is a schematic cross-sectional view of a display device according to an embodiment; Figure 6 is a schematic cross-sectional view of a filling layer of a display device according to an embodiment; Figures 7 to 9 is a schematic cross-sectional view showing each process in a method of manufacturing a display device according to an embodiment; Fig.10 is a schematic cross-sectional view of a display device according to an embodiment; Fig.11 It is shown Fig.10 A plan view of each light emitting area of ​​a display device; Fig.12 is a schematic cross-sectional view of an example of a dam structure according to an embodiment; Fig.13 is a schematic cross-sectional view of another example of the dam structure according to the embodiment; Fig.14 is a schematic cross-sectional view of another example of the dam structure according to the embodiment; Fig.15 and Fig.16 Shown according to Fig.10 Other examples of the display device of the embodiment; Fig.17 is a schematic cross-sectional view of a display device according to an embodiment; Fig.18 is a schematic cross-sectional view of a display device according to an embodiment; Fig.19 It is shown Fig.18 A plan view of a light emitting area of ​​a display device; Fig. 20 is a graph showing white efficiency and front-to-side brightness ratio relative to the refractive index of the filling layer; Fig.21 is a graph showing BT2020 coverage relative to the refractive index and thickness of the fill layer; Fig. 22 is a graph showing the front-to-side brightness ratio of each light emitting area versus angle; and Fig.23 is a graph showing white efficiency of a display device relative to the cone angle of a dam structure. DETAILED DESCRIPTION

[0037] In the following description, for the purpose of explanation, many specific details are set forth to provide a thorough understanding of various embodiments or implementations of the invention. "Embodiment" and "implementation" as used herein are interchangeable words that employ non-limiting examples of the apparatus or method disclosed herein. However, it is apparent that various embodiments may be practiced without these specific details or with one or more equivalent arrangements. Here, various embodiments need not be exclusive and are not limited to the disclosure. For example, the specific shape, configuration, and characteristics of an embodiment may be used or implemented in another embodiment.

[0038] Unless otherwise specified, the illustrated embodiments will be understood to provide the features of the invention. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects, etc. (hereinafter individually or collectively referred to as "elements") of the various embodiments may be further combined, separated, exchanged and / or rearranged without departing from the inventive concept.

[0039] The use of cross hatching and / or shading is usually provided in the drawings to make the boundaries between adjacent elements clear. Thus, unless otherwise specified, the presence or absence of cross hatching or shading does not convey or indicate any preference or requirement for the specific material, material properties, size, ratio, commonality between the elements shown and / or any other characteristics, attributes, properties, etc. of the elements. In addition, in the drawings, the size and relative size of the elements may be exaggerated for clarity and / or descriptive purposes. When the embodiments can be implemented differently, a specific process sequence may be performed in a different order than described. For example, two processes described in succession may be performed substantially simultaneously or in an order opposite to the order described. In addition, the same reference numerals and / or reference characters represent the same elements.

[0040] When an element such as a layer is referred to as being "on", "connected to" or "bonded to" another element or layer, it may be directly on, directly connected to or directly bonded to the other element or layer, or there may be intervening elements or layers. However, when an element or layer is referred to as being "directly on", "directly connected to" or "directly bonded to" another element or layer, there are no intervening elements or layers. For this purpose, the term "connected" may refer to a physical connection, an electrical connection and / or a fluid connection with or without intervening elements. In addition, the X-axis, Y-axis and Z-axis are not limited to three axes such as the x-axis, y-axis and z-axis of a rectangular coordinate system, but may be interpreted in a broader sense. For example, the X-axis, Y-axis and Z-axis may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.

[0041] For the purpose of this disclosure, "at least one of A and B" may be interpreted as only A, only B, or any combination of A and B. In addition, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be interpreted as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0042] Although the terms "first", "second", etc. can be used to describe various types of elements here, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, the first element discussed below can be named as the second element without departing from the disclosed teachings.

[0043] For descriptive purposes, spatially relative terms such as "under," "below," "below," "down," "above," "up," "above," "higher," "side" (e.g., as in "sidewall"), etc., may be used herein and thereby describe the relationship of one element to another element as shown in the accompanying drawings. In addition to the orientations depicted in the accompanying drawings, spatially relative terms are intended to include different orientations of the device in use, operation, and / or manufacture. For example, if the device in the accompanying drawings is flipped, an element described as "under" or "beneath" other elements or features will subsequently be oriented to be "above" the other elements or features. Thus, the term "under" may include both above and below orientations. In addition, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations), and as such, the spatially relative descriptors used herein are interpreted accordingly.

[0044] The terms used here are for the purpose of describing specific embodiments and are not intended to be limiting. Unless the context clearly indicates otherwise, the singular forms "one", "one (kind / person)" and "said / the" as used here are intended to also include plural forms. In addition, when the terms "comprise", "include" and / or its variations are used in this specification, it is explained that there are stated features, integral bodies, steps, operations, elements, components and / or their groups, but it is not excluded that there are or add one or more other features, integral bodies, steps, operations, elements, components and / or their groups. It is also noted that, as used here, the terms "substantially", "about (approximately)" and other similar terms are used as approximate terms rather than as degree terms, and are used to explain the inherent deviations of measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0045] Here, various embodiments are described with reference to cross-sectional views and / or exploded views as schematic illustrations of embodiments and / or intermediate structures. As such, variations in the shapes of the illustrations, such as those caused by manufacturing techniques and / or tolerances, will be expected. Therefore, the embodiments disclosed herein should not necessarily be interpreted as being limited to the shapes of the specifically illustrated regions, but will include deviations in shape caused by, for example, manufacturing. In this way, the regions shown in the drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and thus need not be intended to be limiting.

[0046] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those skilled in the art to which the present disclosure belongs. It will also be understood that terms (such as those defined in common dictionaries) should be interpreted as having a meaning consistent with their meaning in the relevant art and the context of the disclosure, and should not be interpreted in an idealized or overly formal sense, unless explicitly defined as such herein.

[0047] Hereinafter, embodiments are described with reference to the accompanying drawings.

[0048] Figure 1 is a plan view of a display device 10 according to the embodiment.

[0049] Reference Figure 1 The display device 10 according to the embodiment may be applied to a smart phone, a mobile phone, a tablet personal computer (PC), a personal digital assistant (PDA), a portable multimedia player (PMP), a television, a game console, a watch-type electronic device, a head-mounted display, a monitor of a PC, a laptop computer, a car navigation system, a car dashboard, a digital camera, a video camera, an outdoor billboard, an electronic display board, a medical device, an inspection device, various home appliances (such as a refrigerator and a washing machine), or an Internet of Things (IoT) device. In the specification, a television will be described as an example of the display device 10, and the television may have a high resolution or an ultra-high resolution such as HD, UHD, 4K, or 8K.

[0050] The display device 10 according to the embodiment can be classified differently according to the display method. For example, the display device can be classified as an organic light-emitting display device, an inorganic electroluminescent (EL) display device, a quantum dot light-emitting display device (QED), a micro light-emitting diode display device, a nano light-emitting diode display device, a plasma display panel (PDP), a field emission display (FED) device, a cathode ray tube (CRT) display device, a liquid crystal display (LCD) device, or an electrophoretic display (EPD) device. An organic light-emitting display device and an inorganic EL display device will be described below as examples of the display device 10. Unless special distinction is required, the display device applied to the embodiment will be simply shortened to a display device. However, the embodiment is not limited to an organic light-emitting display device or an inorganic EL display device, and other display devices listed above or known in the art may also be applied within the scope of the shared technical spirit.

[0051] The display device 10 according to the embodiment may have a quadrilateral shape, such as a rectangular shape, in a plan view. In the case where the display device 10 is a television, its long side may be located in the horizontal direction. However, the disclosure may not be limited thereto, and the long side may also be located in the vertical direction, or the display device 10 may be rotatably mounted so that the long side may be variably located in the horizontal direction or the vertical direction.

[0052] The display device 10 may include a display area DPA and a non-display area NDA. The display area DPA may be an effective area in which an image may be displayed. The display area DPA may have a rectangular shape similar to the overall shape of the display device 10 in a plan view, but the disclosure may not be limited thereto.

[0053] The display area DPA may include a plurality of pixels PX. The pixels PX may be arranged in a matrix form. Each of the pixels PX may be rectangular or square in a plan view. However, the disclosure may not be limited thereto, and each of the pixels PX may also have a rhombus shape, each side of the rhombus shape being inclined relative to the side of the display device 10. The pixels PX may include pixels PX of various colors. For example, the pixels PX may include a first color (blue) pixel PX, a second color (red) pixel PX, and a third color (green) pixel PX, but are not limited thereto. These color pixels PX may be arranged in stripes or PenTiles. ® Types are arranged alternately.

[0054] The non-display area NDA may be disposed around the display area DPA. The non-display area NDA may surround the display area DPA in whole or in part. The display area DPA may be rectangular, and the non-display area NDA may be adjacent to four sides of the display area DPA. The non-display area NDA may form a frame of the display device 10.

[0055] A driving circuit or a driving element for driving the display area DPA may be provided in the non-display area NDA. In an embodiment, a pad portion may be provided on the display substrate of the display device 10 in the first non-display area NDA1 and the second non-display area NDA2, and an external device EXD may be mounted on the pad electrode of the pad portion, the first non-display area NDA1 being provided to be aligned with the first long side ( Figure 1 The second non-display area NDA2 is adjacent to the lower side of the second long side ( Figure 1 The upper side of the display device 10 is adjacent to the external device EXD. Examples of the external device EXD may include a connection film, a printed circuit board, a driver chip DIC, a connector, and a wiring connection film. The scan driver SDR formed on the display substrate of the display device 10 (for example, directly formed on the display substrate) may be disposed on a first short side ( Figure 1 However, the disclosure may not be limited thereto, and the scan driver SDR may also be disposed on the second short side ( Figure 1 The fourth non-display area NDA4 opposite to the third non-display area NDA3 may include or may not include a driving circuit or a driving element.

[0056] Figure 2 is a schematic layout diagram of wires included in the display device 10 according to an embodiment.

[0057] Reference Figure 2 , the display device 10 may include a plurality of lines. The lines may include a scan line SCL, a sensing signal line SSL, a data line DTL, an initialization voltage line VIL, a first voltage line VDL, and a second voltage line VSL. Although not shown in the drawings, other lines may be further provided in the display device 10.

[0058] The scan lines SCL and the sensing signal lines SSL may extend in the first direction DR1. The scan lines SCL and the sensing signal lines SSL may be electrically connected to a scan driver SDR. The scan driver SDR may include a driving circuit. The scan driver SDR may be disposed at one side of the display area DPA in the first direction DR1, but the disclosure may not be limited thereto. The scan driver SDR may be electrically connected to a signal connection line CWL, and at least one end of the signal connection line CWL may form a wiring pad WPD_CW in the pad area PDA of the non-display area NDA, and thus may be electrically connected to an external device.

[0059] As used herein, the term "connected" may mean that any one component and another component may extend toward each other not only through physical contact, but also through another component. It is understood that any one part and another part may extend toward each other to be integrated with each other. In addition, the connection between any one component and another component may be interpreted as including an electrical connection through another component in addition to the connection through direct contact.

[0060] The data line DTL and the initialization voltage line VIL may extend in a second direction DR2 intersecting the first direction DR1. Each of the initialization voltage lines VIL may include a portion extending in the second direction DR2, and may also include a portion branching from the above portion in the first direction DR1. Each of the first voltage line VDL and the second voltage line VSL may also include a portion extending in the second direction DR2 and a portion electrically connected to the above portion and extending in the first direction DR1. The first voltage line VDL and the second voltage line VSL may have a mesh structure, but the disclosure may not be limited thereto. Although not shown in the drawings, each pixel PX of the display device 10 may be electrically connected to the initialization voltage line VIL, the first voltage line VDL, the second voltage line VSL, and at least one data line DTL.

[0061] The data line DTL, the initialization voltage line VIL, the first voltage line VDL, and the second voltage line VSL may be electrically connected to one or more wiring pads WPD. Each wiring pad WPD may be arranged in a pad area PDA. In an embodiment, a wiring pad WPD_DT (hereinafter referred to as a "data pad") of the data line DTL may be arranged in a pad area PDA located on one side of the display area DPA in the second direction DR2, and a wiring pad WPD_Vint (hereinafter referred to as an "initialization voltage pad") of the initialization voltage line VIL, a wiring pad WPD_VDD (hereinafter referred to as a "first power pad") of the first voltage line VDL, and a wiring pad WPD_VSS (hereinafter referred to as a "second power pad") of the second voltage line VSL may be arranged in a pad area PDA located on the other side of the display area DPA in the second direction DR2. For another example, the data pad WPD_DT, the initialization voltage pad WPD_Vint, the first power pad WPD_VDD, and the second power pad WPD_VSS may all be arranged in the same area, for example, in a non-display area NDA located on the upper side of the display area DPA. External device EXD (see Figure 1 ) can be mounted on the wiring pad WPD. The external device EXD can be mounted on the wiring pad WPD through an anisotropic conductive film or ultrasonic bonding, etc.

[0062] Each pixel PX or sub-pixel SPX of the display device 10 includes a pixel driving circuit. The above-mentioned line can transmit a driving signal to each pixel driving circuit while passing through each pixel PX or around each pixel PX. The pixel driving circuit may include a transistor and a capacitor. The number of transistors and capacitors in each pixel driving circuit may be changed differently. According to an embodiment, the pixel driving circuit of each sub-pixel SPX of the display device 10 may have a 3T1C structure including three transistors and one capacitor. Although the 3T1C structure may be used as an example to describe the pixel driving circuit below, the disclosure may not be limited thereto, and various other modified pixel structures (such as a 2T1C structure, a 7T1C structure, and a 6T1C structure) may also be applicable.

[0063] Figure 3 is a schematic diagram of an equivalent circuit of a sub-pixel SPX according to the embodiment.

[0064] Reference Figure 3 , each sub-pixel SPX of the display device 10 according to the embodiment includes three transistors DTR, STR1, and STR2 and one storage capacitor CST in addition to the light emitting element ED.

[0065] The light emitting element ED emits light according to the current supplied through the driving transistor DTR. The light emitting element ED may be implemented as an inorganic light emitting diode, an organic light emitting diode, or a micro light emitting diode or a nano light emitting diode.

[0066] The first electrode (i.e., anode) of the light emitting element ED can be connected to the source electrode of the driving transistor DTR, and the second electrode (i.e., cathode) can be electrically connected to the second power line ELVSL which can be supplied with a low potential voltage (second power supply voltage) lower than the high potential voltage (first power supply voltage) of the first power line ELVDL.

[0067] The driving transistor DTR adjusts the current flowing from the first power line ELVDL to which the first power supply voltage may be supplied to the light emitting element ED according to the voltage difference between the gate electrode and the source electrode. The driving transistor DTR may have a gate electrode electrically connected to the first electrode of the first transistor STR1, a source electrode electrically connected to the first electrode of the light emitting element ED, and a drain electrode electrically connected to the first power line ELVDL to which the first power supply voltage may be applied.

[0068] The first transistor STR1 may be turned on by a scan signal of the scan line SCL to connect the data line DTL to the gate electrode of the driving transistor DTR. The first transistor STR1 may have a gate electrode electrically connected to the scan line SCL, a first electrode electrically connected to the gate electrode of the driving transistor DTR, and a second electrode electrically connected to the data line DTL.

[0069] The second transistor STR2 may be turned on by a sensing signal of the sensing signal line SSL to connect the initialization voltage line VIL to the source electrode of the driving transistor DTR. The second transistor STR2 may have a gate electrode electrically connected to the sensing signal line SSL, a first electrode electrically connected to the initialization voltage line VIL, and a second electrode electrically connected to the source electrode of the driving transistor DTR.

[0070] In an embodiment, the first electrode of each of the first transistor STR1 and the second transistor STR2 may be a source electrode, and the second electrode may be a drain electrode. However, the disclosure may not be limited thereto, and the opposite may be true.

[0071] The storage capacitor CST may be formed between the gate electrode and the source electrode of the driving transistor DTR. The storage capacitor CST may store a difference between the gate voltage and the source voltage of the driving transistor DTR.

[0072] The driving transistor DTR and the first and second transistors STR1 and STR2 may be formed as thin film transistors. Figure 3 , the driving transistor DTR and the first transistor STR1 and the second transistor STR2 may be N-type metal oxide semiconductor field effect transistors (MOSFETs), but the disclosure may not be limited thereto. The driving transistor DTR and the first transistor STR1 and the second transistor STR2 may also be formed as P-type MOSFETs, or some of the driving transistor DTR and the first transistor STR1 and the second transistor STR2 may be formed as N-type MOSFETs, and the other may be formed as P-type MOSFETs.

[0073] Figure 4 is a schematic cross-sectional view of a display device 10 according to the embodiment.

[0074] Reference Figure 4 , the display device 10 according to the embodiment may include a substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filling layer LRF, a color filter layer CFL, and a counter substrate TSUB.

[0075] The substrate SUB may be an insulating substrate. The substrate SUB may include a transparent material. For example, the substrate SUB may include a transparent insulating material such as glass or quartz. The substrate SUB may be a rigid substrate. However, the disclosure may not be limited thereto, and the substrate SUB may also include a plastic such as polyimide, or may have a flexible property such that it may be bent, curved, folded, or curled.

[0076] The light emitting element layer EML may be disposed on the substrate SUB. The light emitting element layer EML may include a plurality of switching elements and a plurality of light emitting elements ED disposed in each sub-pixel. The switching element may drive the light emitting element ED so that the light emitting element ED may emit light.

[0077] The thin film encapsulation layer TFEL may be disposed on the light emitting element layer EML. The thin film encapsulation layer TFEL may include an organic layer disposed between a plurality of inorganic layers to protect the light emitting element layer EML from external moisture and oxygen.

[0078] The wavelength conversion layer WCL may be disposed on the thin film encapsulation layer TFEL and may convert the wavelength of light emitted from the light emitting element layer EML to output red light, green light, and blue light.

[0079] The filling layer LRF may be disposed on the wavelength conversion layer WCL. The filling layer LRF may improve light efficiency by causing light emitted from the wavelength conversion layer WCL to be totally reflected at an interface between the filling layer LRF and the wavelength conversion layer WCL. The filling layer LRF may include a low refractive index material according to an embodiment to be described later.

[0080] The color filter layer CFL may be disposed on the filling layer LRF. The color filter layer CFL may filter light incident from the outside to reduce reflection of the external light, and may improve color characteristics of light emitted through the wavelength conversion layer WCL.

[0081] The sub-substrate TSUB may be disposed on the color filter layer CFL. The sub-substrate TSUB may encapsulate the light emitting element layer EML together with the substrate SUB. The sub-substrate TSUB may include a transparent material. For example, the sub-substrate TSUB may include a transparent insulating material such as glass or quartz.

[0082] Figure 5 is a schematic cross-sectional view of the display device 10 of the embodiment. Figure 6 is a schematic cross-sectional view of a filling layer LRF of the display device 10 according to the embodiment.

[0083] Reference Figure 5 and Figure 6 , the display device 10 according to the embodiment may include a substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filling layer LRF, a color filter layer CFL, and a counter substrate TSUB.

[0084] A plurality of light emitting areas LA1 to LA3 and a non-light emitting area NLA may be defined in the substrate SUB. The light emitting areas LA1 to LA3 may be areas where light generated by the light emitting elements ED1 to ED3 may be emitted to the outside, and the non-light emitting area NLA may be an area where light is not emitted to the outside. In an embodiment, a first light emitting area (or referred to as a blue light emitting area) LA1, a second light emitting area (or referred to as a red light emitting area) LA2, and a third light emitting area (or referred to as a green light emitting area) LA3 may be sequentially and repeatedly arranged in the first direction DR1 in the display area DPA.

[0085] The first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 may have different widths measured in the first direction DR1. For example, the width of the first light emitting area LA1 may be smaller than the width of the third light emitting area LA3, and the width of the third light emitting area LA3 may be smaller than the width of the second light emitting area LA2. However, the disclosure may not be limited thereto, and the first light emitting area LA1, the second light emitting area LA2, and the third light emitting area LA3 may also have the same width measured in the first direction DR1.

[0086] The light emitting areas LA1 to LA3 may emit light of different colors. In an embodiment, the first light emitting area LA1 may emit light of a first color, the second light emitting area LA2 may emit light of a second color, and the third light emitting area LA3 may emit light of a third color. In an embodiment, the light of the first color may be blue light having a peak wavelength in the range of about 440 nm to about 480 nm, and the light of the second color may be red light having a peak wavelength in the range of about 610 nm to about 650 nm. The light of the third color may be green light having a peak wavelength in the range of about 510 nm to about 550 nm. However, the disclosure may not be limited thereto, and the light of the second color may also be green light, and the light of the third color may also be red light.

[0087] The switching elements T1 to T3 may be disposed on the substrate SUB. In an embodiment, the first switching element T1 may be located on the substrate SUB in the first light emitting area LA1, the second switching element T2 may be located in the second light emitting area LA2, and the third switching element T3 may be located in the third light emitting area LA3. However, the disclosure may not be limited thereto. In an embodiment, at least one of the first switching element T1, the second switching element T2, and the third switching element T3 may be located in the non-light emitting area NLA.

[0088] In an embodiment, each of the first switching element T1, the second switching element T2, and the third switching element T3 may be a thin film transistor including amorphous silicon, polycrystalline silicon, or an oxide semiconductor. Although not shown in the drawings, a plurality of signal lines (e.g., gate lines, data lines, power lines, etc.) that transmit signals to each switching element may be further disposed on the substrate SUB. Each of the switching elements T1 to T3 may include a portion of the first insulating layer 120. For example, the first insulating layer 120 may be a gate insulating film or an interlayer insulating film of the thin film transistor. The gate insulating film or the interlayer insulating film may be a thin film including silicon oxide (SiO x ), silicon oxynitride (SiO x N y ) and silicon nitride (SiN x ) is a single layer or multiple layers of one or more.

[0089] The second insulating layer 130 may be located on the first switching element T1, the second switching element T2, and the third switching element T3. In an embodiment, the second insulating layer 130 may be a planarization layer. In an embodiment, the second insulating layer 130 may be made of an organic layer. For example, the second insulating layer 130 may include an acrylic resin, an epoxy resin, an imide resin, an ester resin, or a combination thereof. In an embodiment, the second insulating layer 130 may include a positive photosensitive material or a negative photosensitive material.

[0090] The first anode AE1, the second anode AE2, and the third anode AE3 may be located on the second insulating layer 130. The first anode AE1 may be located in the first light emitting area LA1, but at least a portion of the first anode AE1 may extend to the non-light emitting area NLA. The second anode AE2 may be located in the second light emitting area LA2, but at least a portion of the second anode AE2 may extend to the non-light emitting area NLA. The third anode AE3 may be located in the third light emitting area LA3, but at least a portion of the third anode AE3 may extend to the non-light emitting area NLA. The first anode AE1 may penetrate the second insulating layer 130 and may be electrically connected to the first switching element T1. The second anode AE2 may penetrate the second insulating layer 130 and may be electrically connected to the second switching element T2. The third anode AE3 may penetrate the second insulating layer 130 and may be electrically connected to the third switching element T3.

[0091] In an embodiment, the widths or areas of the first anode AE1, the second anode AE2, and the third anode AE3 may be different from each other. For example, the width of the first anode AE1 may be smaller than the width of the second anode AE2, and the width of the third anode AE3 may be smaller than the width of the second anode AE2 and larger than the width of the first anode AE1. The area of ​​the first anode AE1 may be smaller than the area of ​​the second anode AE2, and the area of ​​the third anode AE3 may be smaller than the area of ​​the second anode AE2 and larger than the area of ​​the first anode AE1. The area of ​​the first anode AE1 may be smaller than the area of ​​the second anode AE2, and the area of ​​the third anode AE3 may be larger than the area of ​​the second anode AE2 and the area of ​​the first anode AE1. However, the disclosure may not be limited to the above embodiments. In an embodiment, the widths or areas of the first anode AE1, the second anode AE2, and the third anode AE3 may be substantially the same.

[0092] The first anode AE1, the second anode AE2, and the third anode AE3 may be reflective electrodes. The first anode AE1, the second anode AE2, and the third anode AE3 may be made of a material such as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), indium oxide (In 2 O 3 ) or a mixture thereof and a stacked structure of a reflective material layer such as silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), lead (Pb), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca) or a mixture thereof. The material layer with a high work function may be disposed on the reflective material layer so that it may be positioned close to the light emitting layer OL. The first anode AE1, the second anode AE2, and the third anode AE3 may have ITO / Mg, ITO / MgF 2 , ITO / Ag or ITO / Ag / ITO multilayer structure, but not limited thereto.

[0093] The pixel defining layer 150 may be located on the first anode AE1, the second anode AE2, and the third anode AE3. The pixel defining layer 150 may include an opening exposing the first anode AE1, an opening exposing the second anode AE2, and an opening exposing the third anode AE3, and may define a first light emitting area LA1, a second light emitting area LA2, a third light emitting area LA3, and a non-light emitting area NLA. The area of ​​the first anode AE1 that is not covered by the pixel defining layer 150 and may be exposed may be the first light emitting area LA1. The area of ​​the second anode AE2 that is not covered by the pixel defining layer 150 and may be exposed may be the second light emitting area LA2. The area of ​​the third anode AE3 that is not covered by the pixel defining layer 150 and may be exposed may be the third light emitting area LA3. The area where the pixel defining layer 150 may be located may be the non-light emitting area NLA.

[0094] The pixel defining layer 150 may include an organic insulating material such as polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene resin, polyphenylene sulfide resin, benzocyclobutene (BCB), or a combination thereof.

[0095] In an embodiment, the pixel defining layer 150 may overlap with the bank 180 of the wavelength conversion layer WCL to be described later. The light emitting layer OL may be disposed on the first anode AE1, the second anode AE2, and the third anode AE3. In an embodiment in which the display device 10 may be an organic light emitting display device, the light emitting layer OL may include an organic layer including an organic material. The organic layer includes an organic light emitting layer, and in some cases, the organic layer may further include at least one of a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as an auxiliary layer for assisting light emission.

[0096] In an embodiment, the light-emitting layer OL may have a tandem structure including a plurality of organic light-emitting layers stacked on each other in a thickness direction and a charge generation layer disposed therebetween. The organic light-emitting layers stacked on each other may emit light of the same wavelength, or may emit light of different wavelengths. For example, the organic light-emitting layers stacked on each other may include an organic light-emitting layer emitting light of a green wavelength and an organic light-emitting layer emitting light of a blue wavelength. In an embodiment, the organic light-emitting layers stacked on each other may include an organic light-emitting layer emitting light of a red wavelength, an organic light-emitting layer emitting light of a green wavelength, and an organic light-emitting layer emitting light of a blue wavelength.

[0097] In an embodiment, the light emitting layer OL may be in the shape of a continuous layer formed throughout the light emitting areas LA1 to LA3 and the non-light emitting area NLA. The wavelength of light emitted from the light emitting layer OL may be the same. For example, the light emitting layer OL may emit blue light, white wavelength light, or ultraviolet light in the light emitting areas LA1 to LA3.

[0098] The cathode CE may be located on the light emitting layer OL. In an embodiment, the cathode CE may have translucency or transparency. When the cathode CE has translucency, it may include Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF, Mo, Ti, or a compound or mixture thereof (e.g., a mixture of Ag and Mg) and a material having a multilayer structure such as LiF / Ca or LiF / Al. When the thickness of the cathode CE is tens to hundreds of angstroms, the cathode CE may have translucency.

[0099] In the case where the cathode CE has transparency, it may include a transparent conductive oxide (TCO). For example, the cathode CE may include tungsten oxide (W x Ox ), titanium oxide (TiO 2 ), indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), indium tin zinc oxide (ITZO), magnesium oxide (MgO), or a combination thereof.

[0100] The first anode AE1, the light emitting layer OL, and the cathode CE may form a first light emitting element ED1. The second anode AE2, the light emitting layer OL, and the cathode CE may form a second light emitting element ED2. The third anode AE3, the light emitting layer OL, and the cathode CE may form a third light emitting element ED3. Each of the first light emitting element ED1, the second light emitting element ED2, and the third light emitting element ED3 may emit source light, and the source light may be provided to the wavelength conversion layer WCL. The source light may be, for example, blue light. However, the disclosure may not be limited thereto, and the source light may also be white light or ultraviolet light. The first light emitting element ED1, the second light emitting element ED2, and the third light emitting element ED3 may be organic light emitting diodes.

[0101] The thin film encapsulation layer TFEL may be located on the cathode CE. The thin film encapsulation layer TFEL may be commonly located in the first light emitting area LA1, the second light emitting area LA2, the third light emitting area LA3 and the non-light emitting area NLA. In an embodiment, the thin film encapsulation layer TFEL may cover (eg, directly cover) the cathode CE.

[0102] In an embodiment, the thin film encapsulation layer TFEL may include a first encapsulation inorganic layer 171 , an encapsulation organic layer 173 , and a second encapsulation inorganic layer 175 sequentially stacked on one another on the cathode CE.

[0103] The first encapsulation inorganic layer 171 and the second encapsulation inorganic layer 175 may include any one or more of silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, cerium oxide, silicon oxynitride, and lithium fluoride. The encapsulation organic layer 173 includes acrylic resin, methacrylate resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or a combination thereof.

[0104] However, the structure of the thin film encapsulation layer TFEL may not be limited to the above example, and the stacking structure of the thin film encapsulation layer TFEL may be variously changed.

[0105] The wavelength conversion layer WCL may be disposed on the light emitting element layer EML and the thin film encapsulation layer TFEL.

[0106] The wavelength conversion layer WCL may include a bank 180 , a light-transmitting pattern 230 , a first wavelength conversion pattern 240 , a second wavelength conversion pattern 250 , and a capping layer 300 .

[0107] The embankment 180 may be disposed on the thin film encapsulation layer TFEL. The embankment 180 may define the light emitting areas LA1 to LA3 and the non-light emitting area NLA. The embankment 180 may overlap the non-light emitting area NLA to block the transmission of light. More specifically, the embankment 180 may be located between the light-transmitting pattern 230 and the first wavelength conversion pattern 240, between the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250, and between the second wavelength conversion pattern 250 and the light-transmitting pattern 230 to prevent color mixing between adjacent light emitting areas.

[0108] The bank 180 may include an organic light blocking material and may be formed by a process of coating and exposing the organic light blocking material or an inkjet method. For example, the bank 180 may include an organic material and a light blocking dye or pigment mixed with the organic material. Examples of organic materials may include acrylic resins, methacrylate resins, polyisoprene, vinyl resins, epoxy resins, urethane resins, cellulose resins, perylene resins, or combinations thereof. Examples of dyes or pigments may include carbon black.

[0109] The light-transmitting pattern 230 may be disposed on the thin film encapsulation layer TFEL. The light-transmitting pattern 230 may overlap the first light emitting area LA1. The light-transmitting pattern 230 may transmit incident light. In the case where the source light provided from the first light emitting element ED1 is blue light, the blue source light may pass through the light-transmitting pattern 230.

[0110] In an embodiment, the light-transmitting pattern 230 may include a first base resin 231 , and may further include a first scatterer 233 dispersed in the first base resin 231 .

[0111] The first base resin 231 may be made of a material having a relatively high light transmittance. In an embodiment, the first base resin 231 may be made of an organic material. For example, the first base resin 231 may include an organic material such as epoxy resin, acrylic resin, cardo resin, imide resin, or a combination thereof.

[0112] The first scatterer 233 may have a refractive index different from that of the first matrix resin 231, and may form an optical interface with the first matrix resin 231. For example, the first scatterer 233 may be light scattering particles. The first scatterer 233 may not be particularly limited as long as they may be a material that can scatter at least a portion of the transmitted light. However, the first scatterer 233 may be, for example, metal oxide particles or organic particles. The metal oxide may be, for example, titanium oxide (TiO 2 )、ZrO 2 )、Alumina(Al 2 O 3 )、Indium oxide(In 2 O 3)、ZnO、SnO 2 ) or a combination thereof, and the organic particles may be made of, for example, acrylic resin or urethane resin. The first scatterer 233 may scatter the incident light passing through the light-transmitting pattern 230 in random directions without substantially converting the wavelength of the incident light, regardless of the incident direction of the incident light.

[0113] In an embodiment, the light-transmitting pattern 230 may be formed by applying a photosensitive material and exposing and developing the photosensitive material. However, the disclosure may not be limited thereto, and the light-transmitting pattern 230, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250 may also be formed using an inkjet method.

[0114] The first wavelength conversion pattern 240 and the second wavelength conversion pattern 250 may be disposed on the thin film encapsulation layer TFEL.

[0115] The first wavelength conversion pattern 240 may be located on the thin film encapsulation layer TFEL and may overlap the second light emitting area LA2. The first wavelength conversion pattern 240 may convert or shift the peak wavelength of the incident light to another specific peak wavelength and output light of the specific peak wavelength. In an embodiment, the first wavelength conversion pattern 240 may convert the source light provided from the second light emitting element ED2 into red light having a peak wavelength in the range of about 610 nm to about 650 nm, and may output red light.

[0116] The first wavelength conversion pattern 240 may include a second base resin 241 and first wavelength shifters 245 dispersed in the second base resin 241 , and may further include second scatterers 243 dispersed in the second base resin 241 .

[0117] The second matrix resin 241 may be made of a material having high light transmittance. In an embodiment, the second matrix resin 241 may be made of an organic material. The second matrix resin 241 and the first matrix resin 231 may be made of the same material, or the second matrix resin 241 may include at least one of the example materials of the first matrix resin 231.

[0118] The first wavelength shifter 245 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. In an embodiment, the first wavelength shifter 245 may convert the source light (e.g., light of the first color which may be blue light) provided from the second light emitting element ED2 into red light having a single peak wavelength in the range of about 610 nm to about 650 nm, and may output red light.

[0119] The first wavelength shifter 245 may be, for example, a quantum dot, a quantum rod, or a phosphor. For example, a quantum dot may be a particle material that emits light of a specific color when electrons transition from a conduction band to a valence band.

[0120] Quantum dots can be semiconductor nanocrystal materials. Quantum dots can have specific band gaps depending on their composition and size. Therefore, quantum dots can absorb light and then emit light with a unique wavelength. Examples of semiconductor nanocrystals of quantum dots can include IV group nanocrystals, II-VI group compound nanocrystals, III-V group compound nanocrystals, IV-VI group compound nanocrystals, and combinations thereof.

[0121] The II-VI group compound can be selected from binary compounds, ternary compounds and quaternary compounds. The binary compound is selected from CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof; the ternary compound is selected from InZnP, AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof; the quaternary compound is selected from HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and mixtures thereof.

[0122] The III-V group compound can be selected from binary compounds, ternary compounds and quaternary compounds. The binary compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and mixtures thereof; the ternary compound is selected from GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InAlP, InNAs, InNSb, InPAs, InPSb and mixtures thereof; the quaternary compound is selected from GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0123] The IV-VI group compound may be selected from binary compounds, ternary compounds and quaternary compounds, the binary compound being selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; the ternary compound being selected from SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; the quaternary compound being selected from SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof. The IV group element may be selected from silicon (Si), germanium (Ge) and mixtures thereof. The IV group compound may be a binary compound selected from silicon carbide (SiC), silicon germanium (SiGe) and mixtures thereof.

[0124] Here, the binary, ternary or quaternary compounds may be in a uniform concentration in the particle, or may be in the same particle with partially different concentrations. They may have a core-shell structure in which a quantum dot surrounds another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element in the shell may decrease toward the center.

[0125] In an embodiment, the quantum dot may have a core-shell structure including a core comprising the above-mentioned nanocrystal and a shell surrounding the core. The shell of each quantum dot may be used as a protective layer for maintaining semiconductor properties by preventing chemical denaturation of the core, and / or as a charging layer for imparting electrophoretic properties to the quantum dot. The shell may be a single layer or multiple layers. The shell of each quantum dot may be, for example, a metal or non-metal oxide, a semiconductor compound, or a combination thereof.

[0126] For example, the metal or non-metal oxide may be a binary compound (such as SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 or NiO) or ternary compounds (such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 or CoMn 2 O 4 ), but may not be limited thereto.

[0127] The semiconductor compound may be CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP or AlSb, but may not be limited thereto.

[0128] The light emitted from the first wavelength shifter 245 may have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, about 40 nm or less, or about 30 nm or less. Therefore, the color purity and color reproducibility of the display device 10 may be further improved. The light emitted from the first wavelength shifter 245 may be radiated in various directions regardless of the incident direction of the incident light. Therefore, the lateral visibility of the second color displayed in the second light emitting area LA2 may be improved.

[0129] A portion of the source light provided from the second light emitting element ED2 may not be converted into red light by the first wavelength shifter 245. However, the portion of the source light that may not be converted into red light may be blocked by the color filter layer CFL disposed above the wavelength conversion layer WCL. On the other hand, the red light that has converted the source light by the first wavelength conversion pattern 240 may be transmitted through the color filter layer CFL and then emitted to the outside.

[0130] The second scatterer 243 may have a refractive index different from that of the second matrix resin 241, and may form an optical interface with the second matrix resin 241. For example, the second scatterer 243 may be light scattering particles. Other details of the second scatterer 243 may be substantially the same or similar to those of the first scatterer 233 described above, and thus a detailed description thereof will be omitted.

[0131] The second wavelength conversion pattern 250 may be located on the thin film encapsulation layer TFEL and may overlap the third light emitting area LA3. The second wavelength conversion pattern 250 may convert or shift the peak wavelength of the incident light to another specific peak wavelength and output light of the specific peak wavelength. In an embodiment, the second wavelength conversion pattern 250 may convert the source light provided from the third light emitting element ED3 into green light in the range of about 510 nm to about 550 nm, and may output green light.

[0132] The second wavelength conversion pattern 250 may include a third base resin 251 and second wavelength shifters 255 dispersed in the third base resin 251 , and may further include third scatterers 253 dispersed in the third base resin 251 .

[0133] The third matrix resin 251 may be made of a material having high light transmittance. In an embodiment, the third matrix resin 251 may be made of an organic material. The third matrix resin 251 and the first matrix resin 231 may be made of the same material, or the third matrix resin 251 may include at least one of the example materials of the first matrix resin 231.

[0134] The second wavelength shifter 255 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. In an embodiment, the second wavelength shifter 255 may convert source light (e.g., blue light) having a peak wavelength in the range of about 440 nm to about 480 nm to green light having a peak wavelength in the range of about 510 nm to about 550 nm.

[0135] The second wavelength shifter 255 may be, for example, a quantum dot, a quantum rod, or a phosphor. A more detailed description of the second wavelength shifter 255 may be substantially the same or similar to the above description of the first wavelength shifter 245, and thus a more detailed description of the second wavelength shifter 255 will be omitted. In an embodiment, both the first wavelength shifter 245 and the second wavelength shifter 255 may be composed of quantum dots. The particle size of the quantum dots forming the first wavelength shifter 245 may be greater than the particle size of the quantum dots forming the second wavelength shifter 255.

[0136] The third scatterer 253 may have a refractive index different from that of the third matrix resin 251, and may form an optical interface with the third matrix resin 251. For example, the third scatterer 253 may be light scattering particles. Other details of the third scatterer 253 may be substantially the same or similar to those of the second scatterer 243 described above, and thus a detailed description thereof will be omitted.

[0137] Source light emitted from the third light emitting element ED3 may be provided to the second wavelength conversion pattern 250 , and the second wavelength shifter 255 may convert the source light emitted from the third light emitting element ED3 into green light having a peak wavelength in the range of about 510 nm to about 550 nm and may output green light.

[0138] A portion of the source light may be transmitted through the second wavelength conversion pattern 250 without being converted into green light by the second wavelength shifter 255. However, the portion of the source light that may not be converted into green light may be blocked by the color filter layer CFL. On the other hand, the green light into which the source light has been converted by the second wavelength conversion pattern 250 may be transmitted through the color filter layer CFL and then emitted to the outside.

[0139] The cover layer 300 may be disposed on the dam 180, the light-transmitting pattern 230, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250 to cover them. Therefore, the cover layer 300 may prevent damage or contamination of the dam 180, the light-transmitting pattern 230, the first wavelength conversion pattern 240, and the second wavelength conversion pattern 250 by preventing penetration of impurities such as moisture or air from the outside.

[0140] The cover layer 300 may be made of an inorganic material, for example, silicon nitride, aluminum nitride, zirconium nitride, titanium nitride, hafnium nitride, tantalum nitride, silicon oxide, aluminum oxide, titanium oxide, tin oxide, silicon oxynitride, or a combination thereof.

[0141] The filling layer LRF may be disposed on the cover layer 300. The filling layer LRF may be disposed on the cover layer 300 (e.g., directly on the cover layer 300) and between the wavelength conversion layer WCL and the color filter layer CFL. The filling layer LRF may be in contact with each of the wavelength conversion layer WCL and the color filter layer CFL. The filling layer LRF may cover the top of the wavelength conversion layer WCL as a whole. The filling layer LRF may be disposed in the entire display area DPA (see FIG. 1 ) of the display device 10. Figure 1 ). For example, the filling layer LRF may be disposed in the light emitting areas LA1 to LA3 and the non-light emitting area NLA in the display area DPA. The filling layer LRF may extend to the non-display area NDA (see Figure 1 ).

[0142] The filling layer LRF may have a relatively lower refractive index than the light-transmitting pattern 230, the first wavelength conversion pattern 240, the second wavelength conversion pattern 250, and the cover layer 300. Due to the difference in refractive index at the interface between the filling layer LRF and the cover layer 300, the filling layer LRF may cause some of the light emitted from the wavelength conversion layer WCL to be totally reflected. The totally reflected light may re-enter the first wavelength conversion pattern 240 and the second wavelength conversion pattern 250, and may be reused for wavelength conversion or may be re-reflected forward by the scatterers of the wavelength conversion layer WCL. Therefore, the front light emission efficiency of the display device 10 including the filling layer LRF may be improved.

[0143] The filling layer LRF may include a filling resin FR and filling particles FP dispersed in the filling resin FR. The filling resin FR may be made of a material having a high light transmittance. For example, the filling resin FR may include a silicone resin, an acryl resin, an epoxy resin, a polyacrylate resin, a polyurethane resin, a polyethylene resin, an ester resin, or a combination thereof.

[0144] The filling particles FP may be hollow. The filling particles FP may include silicon dioxide (SiO 2 )、Magnesium fluoride(MgF 2), iron oxide (Fe 3 O 4 ) or a combination thereof. For example, the hollow particles may include a shell made of one or more of the above materials and be hollow inside the shell. In an embodiment, the hollow particles may have a diameter in the range of about 20 nm to about 200 nm, but the disclosure may not be limited thereto. The filling layer LRF may be formed by mixing the filling resin FR with the filling particles FP, a dispersant, a thermal initiator, or a photoinitiator.

[0145] In an embodiment, the filling layer LRF may include a filling resin FR, and the filling resin FR may include a siloxane compound. For example, the filling layer LRF may include a diacrylate siloxane compound, a polyacrylate siloxane compound, a polyurethane siloxane compound, a polyethylene siloxane compound, or a combination thereof, and may be represented by the following chemical formula.

[0146]

[0147]

[0148]

[0149]

[0150] Among them, R, R′, R″, R 1 , R 2 and R 3 Each may independently be hydrogen or an alkyl group, and n may be in the range of about 1,000 to about 100,000.

[0151] The thickness of the filling layer LRF may be in the range of about 0.1 μm to about 4.5 μm. If the thickness of the filling layer LRF may be about 0.1 μm or more, the flatness of the filling layer LRF may be ensured, and a gap with the color filter layer CFL may be easily formed. If the thickness of the filling layer LRF may be about 4.5 μm or less, defects may be prevented by preventing moisture or oxygen from penetrating through the filling layer LRF from the outside.

[0152] The refractive index of the filling layer LRF may be in the range of about 1.05 to about 1.4. If the refractive index of the filling layer LRF may be about 1.05 or more, the front-side brightness ratio of the display device 10 may be increased. If the refractive index of the filling layer LRF may be about 1.4 or less, the reduction in the front brightness efficiency of the display device 10 may be prevented.

[0153] In an embodiment, the filling layer LRF disposed between the wavelength conversion layer WCL and the color filter layer CFL may increase the front-to-side brightness ratio of the display device 10 and may prevent a reduction in the front brightness efficiency of the display device 10 .

[0154] The color filter layer CFL may be disposed on the wavelength conversion layer WCL, and the counter substrate TSUB may be disposed on the color filter layer CFL.

[0155] The color filter layer CFL may include a first color filter 350 , a second color filter 360 , and a third color filter 370 . The color filter layer CFL may include a first color pattern 355 , a second color pattern 365 , and a third color pattern 375 .

[0156] The first color filter 350 may be disposed between the counter substrate TSUB and the filling layer LRF and may overlap the third light emitting area LA3. The first color filter 350 may overlap the third light emitting element ED3 and the second wavelength conversion pattern 250. The first color pattern 355 may be spaced apart from the first color filter 350 and may overlap the non-light emitting area NLA. The first color filter 350 may contact (e.g., directly contact) the filling layer LRF.

[0157] The first color filter 350 and the first color pattern 355 can selectively transmit light of a third color (e.g., green light), and can block or absorb light of a first color (e.g., blue light) and light of a second color (e.g., red light). In an embodiment, the first color filter 350 can be a green color filter and can include a green colorant such as a green dye or a green pigment. As used herein, the term "colorant" is a concept that includes both dyes and pigments.

[0158] The second color filter 360 may be disposed between the counter substrate TSUB and the filling layer LRF, and may overlap with the second light emitting area LA2. The second color filter 360 may overlap with the second light emitting element ED2 and the first wavelength conversion pattern 240. In an embodiment, one side of the second color filter 360 may overlap with the non-light emitting area NLA and the adjacent first color filter 350. The other side of the second color filter 360 may overlap with the non-light emitting area NLA and the first color pattern 355. The second color pattern 365 may be spaced apart from the second color filter 360 and may overlap with the non-light emitting area NLA. The second color pattern 365 may overlap with the first color filter 350 in the non-light emitting area NLA. The second color filter 360 may contact (e.g., directly contact) the filling layer LRF.

[0159] The second color filter 360 and the second color pattern 365 can selectively transmit the second color light (e.g., red light), and can block or absorb the first color light (e.g., blue light) and the third color light (e.g., green light). For example, the second color filter 360 can be a red color filter and can include a red colorant such as a red dye or a red pigment.

[0160] The third color filter 370 may be disposed between the counter substrate TSUB and the filling layer LRF, and may overlap with the first light emitting area LA1. The third color filter 370 may overlap with the first light emitting element ED1 and the light-transmitting pattern 230. In an embodiment, one side of the third color filter 370 may overlap with the non-light emitting area NLA and the adjacent second color filter 360. The other side of the third color filter 370 may overlap with the non-light emitting area NLA, and may overlap with the adjacent first color filter 350 and the second color pattern 365. The third color pattern 375 may be spaced apart from the third color filter 370, and may overlap with the non-light emitting area NLA. The third color pattern 375 may overlap with the second color filter 360 in the non-light emitting area NLA. The third color filter 370 and the third color pattern 375 may contact (e.g., directly contact) the filling layer LRF.

[0161] The third color filter 370 may selectively transmit light of a first color (e.g., blue light), and may block or absorb light of a second color (e.g., red light) and light of a third color (e.g., green light). For example, the third color filter 370 may be a blue color filter and may include a blue colorant such as a blue dye or a blue pigment.

[0162] As described above, the first color filter 350, the second color filter 360, and the third color filter 370 and the first color pattern 355, the second color pattern 365, and the third color pattern 375 may overlap each other in the non-light emitting area NLA to block or absorb light. For example, the first color pattern 355, the second color filter 360, and the third color filter 370 may overlap each other in the non-light emitting area NLA disposed on one side of the second light emitting area LA2, and the first color filter 350, the second color filter 360, and the third color pattern 375 may overlap each other in the non-light emitting area NLA disposed on the other side of the second light emitting area LA2.

[0163] Since the display device 10 according to the embodiment includes the filling layer LRF disposed between the wavelength conversion layer WCL and the color filter layer CFL as described above, the front-to-side brightness ratio of the display device 10 can be increased and the reduction of the front brightness efficiency of the display device 10 can be prevented.

[0164] The manufacture according to Figure 5 The method of the display device 10 of the embodiment shown in FIG.

[0165] Figures 7 to 9 2 is a schematic cross-sectional view showing each process in the method of manufacturing the display device 10 according to the embodiment.

[0166] Reference Figure 7 , a light emitting element layer EML may be formed by forming a plurality of switching elements T1 to T3, a plurality of light emitting elements ED1 to ED3, a first insulating layer 120 and a second insulating layer 130, and a pixel defining layer 150 on a substrate SUB. A thin film encapsulation layer TFEL may be formed by forming a first encapsulation inorganic layer 171, an encapsulation organic layer 173, and a second encapsulation inorganic layer 175 on the light emitting element layer EML.

[0167] Each of the light emitting element layer EML and the thin film encapsulation layer TFEL disposed on the substrate SUB may be formed by depositing a material forming the layer (e.g., a metal material) and patterning the material using a mask. Each of the first insulating layer 120, the second insulating layer 130, and the pixel defining layer 150 may be formed by applying a material forming the layer (e.g., an insulating material), or by patterning the material using a mask if necessary. The structure of the layer disposed on the substrate SUB may be the same as described above, and thus a detailed description thereof will be omitted.

[0168] The wavelength conversion layer WCL may be formed by patterning the bank 180 on the thin film encapsulation layer TFEL, forming the light-transmitting pattern 230 , the first wavelength conversion pattern 240 , and the second wavelength conversion pattern 250 between portions of the bank 180 , and stacking the capping layer 300 .

[0169] Reference Figure 8 , a first color filter material may be applied on the counter substrate TSUB and patterned to form a first color filter 350 and a first color pattern 355. A second color filter material may be applied on the counter substrate TSUB and patterned to form a second color filter 360 and a second color pattern 365. A third color filter material may be applied on the counter substrate TSUB and patterned to form a third color filter 370 and a third color pattern 375. As a result, a color filter layer CFL may be formed.

[0170] Reference Fig. 9 , a filling material layer LRFL may be formed by applying a filling material on a substrate SUB on which a wavelength conversion layer WCL may be formed. The filling material layer LRFL may be formed using a solution process such as spin coating, slit coating, or inkjet printing. In the current embodiment, the filling material layer LRFL may be formed on the substrate SUB. However, the disclosure may not be limited thereto, and the filling material layer LRFL may also be formed on a counter substrate TSUB.

[0171] The counter substrate TSUB may be aligned on the substrate SUB. Here, the counter substrate TSUB may be aligned so that the color filter layer CFL faces the substrate SUB. The counter substrate TSUB and the substrate SUB may be pressed and bonded together. The counter substrate TSUB and the substrate SUB may be bonded together so that the first color filter 350 corresponds to the third light emitting area LA3, the second color filter 360 corresponds to the second light emitting area LA2, and the third color filter 370 corresponds to the first light emitting area LA1.

[0172] The filling material layer LRFL may be cured by irradiating ultraviolet light or applying heat according to the material of the filling material layer LRFL. As a result, the filling layer LRF may be formed. Therefore, the display device 10 having the filling layer LRF disposed between the substrate SUB and the counter substrate TSUB may be manufactured.

[0173] Display devices 10 according to other embodiments will now be described with reference to other drawings.

[0174] Fig.10 is a schematic cross-sectional view of a display device 10 according to the embodiment. Fig.11 yes Fig.10 A plan view of each light emitting area of ​​the display device 10. Fig.12 is a schematic cross-sectional view of an example of a dam structure DAM according to an embodiment. Fig.13 is a schematic cross-sectional view of another example of the dam structure DAM according to the embodiment. Fig.14 is a schematic cross-sectional view of another example of the dam structure DAM according to the embodiment.

[0175] Reference Figures 10 to 14 , the current embodiment is different from the above Figures 5 to 9 The difference of the embodiment may be that the current embodiment further includes a dam structure DAM disposed between the wavelength conversion layer WCL and the color filter layer CFL and the color filter layer CFL further includes an outer coating layer OC. Therefore, the description of the elements and features that are the same as those of the above-mentioned embodiment will be omitted, and the differences will be described below.

[0176] The display device 10 may include a substrate SUB, a light emitting element layer EML, a thin film encapsulation layer TFEL, a wavelength conversion layer WCL, a filling layer LRF, a dam structure DAM, a color filter layer CFL, and an opposite substrate TSUB.

[0177] The color filter layer CFL may further include an overcoat layer OC. The overcoat layer OC may cover the first, second, and third color filters 350, 360, and 370 and the third color pattern 375. The overcoat layer OC may improve the reliability of bonding with the substrate SUB by planarizing the bottom of the color filter layer CFL.

[0178] The overcoat layer OC may be made of an organic material. For example, the overcoat layer OC may include acrylic resin, methacrylate resin, polyisoprene, imide resin, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or a combination thereof.

[0179] The dam structure DAM may be disposed between the wavelength conversion layer WCL and the color filter layer CFL. The dam structure DAM may be disposed (e.g., directly disposed) on the cover layer 300 of the wavelength conversion layer WCL, and may contact (e.g., directly contact) the outer coating layer OC of the color filter layer CFL. The dam structure DAM may maintain a gap between the substrate SUB and the counter substrate TSUB. For example, the dam structure DAM may maintain a gap between the cover layer 300 and the outer coating layer OC.

[0180] In an embodiment, the dam structure DAM may be disposed in a light emitting area having a light conversion rate of about 50% or less among a plurality of light emitting areas. Here, the light conversion rate may refer to a ratio at which light emitted from each light emitting element may be converted by the wavelength conversion layer WCL. For example, in the first light emitting area LA1, since the light-transmitting pattern 230 may be disposed in the first light emitting area LA1, the light emitted from the first light emitting element ED1 may not be converted. Since the first light emitting area LA1 has a light conversion rate of about 0%, the dam structure DAM may be disposed in the first light emitting area LA1. If the light conversion rate at which light can be converted by the wavelength conversion pattern in another light emitting area may be about 50% or less, the dam structure DAM may also be disposed in that light emitting area.

[0181] A light emitting area having a light conversion rate of about 50% or less may be disadvantageous to side brightness. For example, since the light emitted from the first light emitting element ED1 of the first light emitting area LA1 can be transmitted and emitted as is through the light-transmitting pattern 230, the side brightness may be relatively low. On the other hand, the light emitted from the second light emitting element ED2 of the second light emitting area LA2 can be converted by the first wavelength shifter 245 of the first wavelength conversion pattern 240 and emitted in a Lambertian manner. Therefore, the second light emitting area LA2 can have the same brightness regardless of the angle from which the observer views it, so its side brightness can be relatively high.

[0182] In the current embodiment, as will be described later, the dam structure DAM has a high refractive index and disperses light to the side. Therefore, the dam structure DAM can improve the front-to-side brightness ratio of the first light emitting area LA1 having a light conversion efficiency of about 50% or less.

[0183] The dam structure DAM may overlap with the first light emitting area LA1, and may not overlap with the second light emitting area LA2 and the third light emitting area LA3. The dam structure DAM may overlap with the non-light emitting area NLA to prevent the light characteristics of the second light emitting area LA2 and the third light emitting area LA3 from being affected. The dam structure DAM may overlap with the pixel defining layer 150 of the light emitting element layer EML and the bank 180 of the wavelength conversion layer WCL. The dam structure DAM may overlap with the first light emitting element ED1 of the light emitting element layer EML, the light-transmitting pattern 230 of the wavelength conversion layer WCL, and the third color filter 370.

[0184] The refractive index of the dam structure DAM may be in the range of about 1.5 to about 2. The dam structure DAM may have a refractive index higher than that of the filling layer LRF. If the refractive index of the dam structure DAM may be about 1.5 or greater, light emitted from the first light emitting area LA1 through the light-transmitting pattern 230 may be refracted to the side, thereby increasing the front-to-side brightness ratio. Here, the "front-to-side brightness ratio" refers to the ratio of the side brightness to the front brightness. If the refractive index of the dam structure DAM may be about 2 or less, a relative decrease in the front brightness may be prevented.

[0185] The thickness of the dam structure DAM may be in the range of about 0.1 μm to about 4.5 μm. If the thickness of the dam structure DAM may be about 0.1 μm or more, light emitted from the first light emitting area LA1 may be refracted to the side, thereby improving the front-to-side brightness ratio. If the thickness of the dam structure DAM may be 4.5 μm or less, the gap of the display device 10 may be prevented from increasing. As a result, a thin display device 10 may be implemented.

[0186] The area of ​​the upper surface of the dam structure DAM may be about 60% or more of the area of ​​the lower surface. For example, the area of ​​the upper surface of the dam structure DAM may be less than, equal to, or greater than the area of ​​the lower surface. In an embodiment, the area of ​​the upper surface of the dam structure DAM may be in the range of about 60% to about 1000% of the area of ​​the lower surface. However, the disclosure may not be limited thereto. The cross-sectional shape of the dam structure DAM may be symmetrical or asymmetrical. For example, the cross-sectional shape of the dam structure DAM may be a regular trapezoid, an inverted trapezoid, or a rectangle.

[0187] The taper angle of the dam structure DAM may be in the range of about 20 degrees to about 170 degrees. The taper angle of the dam structure DAM may preferably be in the range of about 40 degrees to about 130 degrees. The area of ​​the upper surface of the dam structure DAM may be in the range of about 60% to about 1000% of the area of ​​the lower surface.

[0188] Figure 12 to Figure 14 Various example shapes of the dam structure DAM are shown.

[0189] Reference Fig.12The area of ​​the upper surface of the dam structure DAM may be in the range of about 60% to less than about 100% of the area of ​​the lower surface of the dam structure DAM. The cross-sectional shape of the dam structure DAM may be a regular trapezoid, and the taper angle (θ) may be an acute angle.

[0190] Reference Fig.13 , the area of ​​the upper surface of the dam structure DAM may be 100% of the area of ​​the lower surface. The area of ​​the upper surface of the dam structure DAM and the area of ​​the lower surface of the dam structure DAM may be equal. The cross-sectional shape of the dam structure DAM may be a rectangle, and the taper angle (θ) may be a right angle.

[0191] Reference Fig.14 , the area of ​​the upper surface of the dam structure DAM may be in the range of about 100% to about 1000% of the area of ​​the lower surface. The cross-sectional shape of the dam structure DAM may be an inverted trapezoid, and the taper angle (θ) may be an obtuse angle.

[0192] The filling layer LRF may be disposed on the wavelength conversion layer WCL in an area other than an area where the dam structure DAM may be located. For example, the filling layer LRF may be disposed between portions of the dam structure DAM. The filling layer LRF may overlap the second light emitting area LA2 and the third light emitting area LA3, and may not overlap the first light emitting area LA1 and the non-light emitting area NLA.

[0193] Since the filling layer LRF overlaps the second and third light emitting areas LA2 and LA3, it can totally reflect light emitted from the second and third light emitting areas LA2 and LA3, thereby improving front brightness efficiency.

[0194] As in the above Figures 5 to 9 As in the embodiment of the present invention, the filling layer LRF may include a filling resin FR and filling particles FP dispersed in the filling resin FR, or the filling resin FR may include a siloxane compound. The filling layer LRF may include vacuum, nitrogen, or an inert gas (e.g., neon). The filling layer LRF may fill the space between the parts of the dam structure DAM with vacuum, nitrogen, or an inert gas.

[0195] As described above, since the display device 10 according to the embodiment includes the dam structure DAM disposed in the light emitting region having a light conversion efficiency of about 50% or less, the front-to-side brightness ratio of the light emitting region can be improved. Since the dam structure DAM can also be disposed in the non-light emitting region NLA, it can be used as a spacer for maintaining a gap between the substrate SUB and the counter substrate TSUB.

[0196] The dam structure DAM may be placed in various ways as long as it overlaps the light emitting region having a light conversion efficiency of about 50% or less.

[0197] Fig.15 and Fig.16 Shown according to Fig.10 Another example of the display device 10 of the embodiment.

[0198] like Fig.15 As shown in FIG. 1 , the dam structure DAM may overlap the first light emitting area LA1 , and may not overlap the second light emitting area LA2 , the third light emitting area LA3 , and the non-light emitting area NLA.

[0199] like Fig.16 As shown in FIG, the dam structure DAM may overlap the first light emitting area LA1 and the non-light emitting area NLA adjacent to the first light emitting area LA1. The dam structure DAM may not overlap the second light emitting area LA2 and the third light emitting area LA3 and the non-light emitting area NLA disposed between the second light emitting area LA2 and the third light emitting area LA3.

[0200] Fig.17 is a schematic cross-sectional view of a display device according to an embodiment.

[0201] Reference Fig.17 , the current embodiment is different from the above Fig.10 The embodiment of the present invention may be different in that the filling layer LRF may be disposed between the dam structure DAM and the color filter layer CFL, and the overcoat layer OC may be omitted.

[0202] The dam structure DAM may be disposed on the wavelength conversion layer WCL, and the filling layer LRF may be disposed on the wavelength conversion layer WCL and the dam structure DAM. The filling layer LRF may cover the dam structure DAM. Since the dam structure DAM may be disposed in the first light emitting area LA1, a portion of the light emitted from the first light emitting area LA1 may reach the dam structure DAM and be refracted to the side, and the light passing through the dam structure DAM may reach the filling layer LRF. Since some light may be refracted to the side by the dam structure DAM, even if the filling layer LRF may be disposed on the dam structure DAM, the filling layer LRF may not affect the increase in the front-to-side brightness ratio.

[0203] The dam structure DAM may be spaced apart from the color filter layer CFL and may not contact the color filter layer CFL. Therefore, since the dam structure DAM may not be affected by the step difference of the color filter layer CFL, the overcoat layer OC of the color filter layer CFL may be omitted.

[0204] In the current embodiment, omitting the overcoat layer OC may simplify the structure and facilitate the process.

[0205] Fig.18 is a schematic cross-sectional view of a display device according to an embodiment. Fig.19 It is shown Fig.18A plan view of a light emitting area of ​​a display device.

[0206] Reference Fig.18 and Fig.19 , the current embodiment is different from the above Fig.10 The embodiment may be different in that the current embodiment further includes a fourth light emitting area LA4, and the fourth light emitting area LA4 includes a fourth switching element T4 and a fourth light emitting element ED4 to emit white light.

[0207] The fourth light emitting region LA4 may include a fourth switching element T4 and a fourth light emitting element ED4 on the substrate SUB. The first to fourth light emitting elements ED1 to ED4 may emit white light as source light. The white light emitted from the light emitting element layer EML may be output as red, green, blue and white light from the wavelength conversion layer WCL.

[0208] Specifically, the wavelength conversion layer WCL may include a third wavelength conversion pattern 270 disposed in the first light emitting area LA1 to convert white light into blue light and a light-transmitting pattern 230 disposed in the fourth light emitting area LA4 to transmit the white light as it is.

[0209] The third wavelength conversion pattern 270 may be located on the thin film encapsulation layer TFEL and may overlap the first light emitting area LA1. The third wavelength conversion pattern 270 may convert or shift the peak wavelength of the incident light to another specific peak wavelength and output light of the specific peak wavelength. In an embodiment, the third wavelength conversion pattern 270 may convert the source light provided from the first light emitting element ED1 into blue light in the range of about 440 nm to about 480 nm, and may output blue light.

[0210] The third wavelength conversion pattern 270 may include a fourth base resin 271 and third wavelength shifters 275 dispersed in the fourth base resin 271 , and may further include fourth scatterers 273 dispersed in the fourth base resin 271 .

[0211] The fourth matrix resin 271 may be made of a material having high light transmittance. In an embodiment, the fourth matrix resin 271 may be made of an organic material. The fourth matrix resin 271 and the first matrix resin 231 may be made of the same material, or the fourth matrix resin 271 may include at least one of the example materials of the first matrix resin 231.

[0212] The third wavelength shifter 275 may convert or shift the peak wavelength of the incident light to another specific peak wavelength. In an embodiment, the third wavelength shifter 275 may convert the white source light into blue light having a peak wavelength in the range of 440 nm to about 480 nm.

[0213] The third wavelength shifter 275 may be, for example, a quantum dot, a quantum rod, or a phosphor. A more detailed description of the third wavelength shifter 275 may be substantially the same or similar to the above description of the first wavelength shifter 245, and thus will be omitted.

[0214] The fourth scatterer 273 may have a refractive index different from that of the fourth matrix resin 271, and may form an optical interface with the fourth matrix resin 271. For example, the fourth scatterer 273 may be light scattering particles. Other details of the fourth scatterer 273 may be substantially the same or similar to those of the above-described second scatterer 243, and thus a detailed description thereof will be omitted.

[0215] A portion of the source light may be transmitted through the third wavelength conversion pattern 270 without being converted into blue light by the third wavelength shifter 275. However, the portion of the source light that may not be converted into blue light may be blocked by the color filter layer CFL. On the other hand, the blue light that has converted the source light by the third wavelength conversion pattern 270 may be transmitted through the color filter layer CFL and then emitted to the outside.

[0216] The light-transmitting pattern 230 disposed in the fourth light emitting area LA4 may be the same as the above-described light-transmitting pattern 230 , and thus a description thereof will be omitted. White light emitted from the fourth light emitting element ED4 may be transmitted through the light-transmitting pattern 230 as it is and emitted.

[0217] The color filter layer CFL may include an opening OP in a region corresponding to the fourth light emitting region LA4. Since the fourth light emitting region LA4 may be a region that may emit white light, a color filter may not be provided, and white light may be emitted as is through the opening OP.

[0218] The dam structure DAM may overlap with the fourth light emitting area LA4, and may not overlap with the first to third light emitting areas LA1 to LA3. The dam structure DAM may overlap with the non-light emitting area NLA to prevent the light characteristics of the first to third light emitting areas LA1 to LA3 from being affected. The dam structure DAM may overlap with the fourth light emitting element ED4 of the light emitting element layer EML, the light-transmitting pattern 230 of the wavelength conversion layer WCL, and the opening OP.

[0219] In an embodiment, the dam structure DAM may be disposed in the fourth light emitting region LA4 having a light conversion rate of about 50% or less among the light emitting regions. Since the light-transmitting pattern 230 may be disposed in the fourth light emitting region LA4, the light emitted from the fourth light emitting element ED4 is not converted. Therefore, the side brightness of the fourth light emitting region LA4 may be disadvantageous. However, the dam structure DAM disposed in the fourth light emitting region LA4 may disperse the light to the side, thereby improving the front-side brightness ratio of the fourth light emitting region LA4 having a light conversion rate of about 50% or less.

[0220] Hereinafter, a simulation example of the above-described display device 10 will be described.

[0221] <Simulation 1> Constructed in Figure 5 The display device 10 including the filling layer LRF shown in FIG. 1 is shown, and the changes in white efficiency and front-to-side brightness ratio with respect to the refractive index of the filling layer LRF and BT2020 (see FIG. 1 ) are simulated. Fig.21 ) Variation of coverage with respect to refractive index and thickness of a filling layer LRF. The filling layer LRF comprises hollow silica particles.

[0222] Fig. 20 is a graph showing white efficiency and front-to-side brightness ratio relative to the refractive index of the filling layer LRF. Fig. 20 In the figure, the horizontal axis represents the refractive index of the filling layer LRF, the left vertical axis represents the white efficiency, and the right vertical axis represents the front-to-side brightness ratio.

[0223] Reference Fig. 20 , the white efficiency decreases as the refractive index of the filling layer LRF increases, and the front-to-side brightness ratio increases as the refractive index of the filling layer LRF increases.

[0224] It can be seen from these results that the filling layer LRF having a refractive index in the range of about 1.05 to about 1.4 can improve the front-to-side brightness ratio of the display device 10 while ensuring a white efficiency of about 100% or more.

[0225] Fig.21 is a graph showing BT2020 coverage relative to the refractive index and thickness of the filling layer LRF. Fig.21 In the figure, the horizontal axis represents the refractive index of the filling layer LRF, and the vertical axis represents the BT2020 coverage. Fig.21 In the simulation, the thickness of the filling layer LRF is changed to about 1.6 μm, about 3.0 μm, and about 4.5 μm. BT2020 is a next-generation standard color gamut approved by the International Telecommunication Union (ITU).

[0226] Reference Fig.21, when the refractive index of the filling layer LRF is in the range of about 1.05 to about 1.4, the BT2020 coverage increases as the refractive index of the filling layer LRF increases. When the thickness of the filling layer LRF is about 1.6 μm, about 3.0 μm, and about 4.5 μm, the BT2020 coverage increases as the refractive index of the filling layer LRF increases.

[0227] It can be seen from these results that the filling layer LRF having a refractive index in the range of about 1.05 to about 1.4 and a thickness of about 4.5 μm or less may improve the BT2020 coverage of the display device 10 .

[0228] <Simulation 2> structure Figure 5 The display device 10 shown in FIG. 1 is used, and the refractive index of the filling layer LRF is set to 1. The front-side brightness ratio of the red light emitting area LA2, the green light emitting area LA3, and the blue light emitting area LA1 of the display device 10 relative to the angle is simulated, and the front brightness and the white efficiency are simulated. Fig.10 After a dam structure having a refractive index of about 1.5 is provided in the blue light emitting area LA1 as shown in , the front-side brightness ratio of the blue light emitting area LA1 with respect to the angle is simulated, and the front brightness and white efficiency are simulated.

[0229] exist Fig. 22 The simulation results of the front-side brightness ratio with respect to the angle are shown in the graph of , and the simulation results of the front brightness and white efficiency are shown in Table 1 below.

[0230] Fig. 22 is a graph showing the front-to-side brightness ratio of each light-emitting area relative to the angle. Fig. 22 In the figure, the horizontal axis represents the angle at which the front-to-side brightness ratio is measured, and the vertical axis represents the front-to-side brightness ratio. LRF (n=1.0) R represents the front-to-side brightness ratio of the red light-emitting region having a filling layer therein, LRF (n=1.0) G represents the front-to-side brightness ratio of the green light-emitting region having a filling layer therein, LRF (n=1.0) B represents the front-to-side brightness ratio of the blue light-emitting region having a filling layer therein, and HRF (n=1.5) B represents the front-to-side brightness ratio of the blue light-emitting region having a dam structure therein.

[0231] Reference Fig. 22 In the case where a filling layer with a refractive index of 1.0 is provided in the red light-emitting region, the green light-emitting region, and the blue light-emitting region, the front-to-side brightness ratio decreases as the angle increases. In the case where a dam structure with a refractive index of about 1.5 is provided in the blue light-emitting region, the front-to-side brightness ratio is higher than the case where a filling layer with a refractive index of 1.0 is provided in the blue light-emitting region.

[0232] In the case of a blue light-emitting region, the source light emitted from the light-emitting element can be transmitted through the wavelength conversion layer as is without being converted by the wavelength conversion layer. Therefore, the front-side brightness ratio of the blue light-emitting region can be relatively lower than the front-side brightness ratio of the red light-emitting region and the green light-emitting region. Therefore, it can be seen that the dam structure can be placed in the blue light-emitting region to improve the front-side brightness ratio by refracting light to the side.

[0233] [Table 1]

[0234] Referring to Table 1, in the case where the dam structure is placed in the blue light emitting region, the front brightness is reduced by about 7.5% and the white efficiency is reduced by about 0.5% compared to the case where the filling layer is placed in the blue light emitting region.

[0235] It can be seen from these results that when the dam structure is placed in the blue light emitting region, the white efficiency can be maintained, but the front brightness can be reduced. Fig. 22 , it can be seen that, when the dam structure is placed in the blue light emitting area, the front-to-side brightness ratio can be increased while the white efficiency can be maintained at the same level.

[0236] <Simulation 3> structure Fig.10 The display device 10 including the dam structure DAM shown in FIG. 1 is shown, and the white efficiency of the display device 10 with respect to the cone angle of the dam structure DAM is simulated. Figure 5 The white efficiency of the display device 10 including the filling layer LRF shown in FIG. 1 is provided as a comparative example (100%). The white efficiency of the display device is provided in case 1 where the dam structure has a cone angle of about 80 degrees, case 2 where the dam structure has a cone angle of about 90 degrees, and case 3 where the dam structure has a cone angle of about 130 degrees.

[0237] Fig.23 is a graph showing white efficiency of a display device relative to the cone angle of a dam structure.

[0238] Reference Fig.23 , the white efficiency is about 102.8% when the cone angle of the dam structure is about 80 degrees, about 107.8% when the cone angle of the dam structure is about 90 degrees, and about 107.7% when the cone angle of the dam structure is about 130 degrees.

[0239] It can be seen from these results that in the case where the taper angle of the dam structure is about 80 degrees or more, the white efficiency of the display device can be significantly greater than that of the comparative example.

[0240] The display device according to the embodiment includes a filling layer having a low refractive index between the wavelength conversion layer and the color filter layer. Therefore, the front-side brightness ratio of the display device can be improved, and the reduction of the front brightness efficiency can be prevented.

[0241] The display device according to the embodiment includes a dam structure having a high refractive index in a light emitting region having a light conversion rate of 50% or less, so that the front-to-side brightness ratio of the light emitting region can be improved and the gap between the substrate and the counter substrate can be maintained.

[0242] However, the effects of the disclosure may not be limited to the effects set forth herein. The above and other effects of the disclosure will become more apparent to those of ordinary skill in the art to which the disclosure pertains by referring to the claims.

[0243] At the end of the detailed description, it will be appreciated by those skilled in the art that many changes and modifications may be made to the embodiments without departing substantially from the principles of the invention. Therefore, the disclosed embodiments disclosed may be used only in a general and descriptive sense and not for purposes of limitation.

Claims

1. A display device, comprising: A light emitting element layer is disposed on the substrate; A thin film encapsulation layer, disposed on the light emitting element layer; a wavelength conversion layer disposed on the thin film encapsulation layer and comprising a dam, the dam defining a plurality of light emitting regions and non-light emitting regions; a dam structure, disposed on the wavelength conversion layer and overlapping at least one of the plurality of light-emitting regions; a filling layer disposed on the wavelength conversion layer and between portions of the dam structure; a color filter layer, disposed on the dam structure; as well as a substrate disposed on the color filter layer, The filling layer overlaps with the light-emitting regions among the plurality of light-emitting regions that are not overlapped with the dam structure.

2. The display device according to claim 1, wherein: The at least one light emitting region among the plurality of light emitting regions overlapping the dam structure has a light conversion rate of 50% or less in the wavelength conversion layer.

3. The display device according to claim 1, wherein: The plurality of light emitting regions include a first light emitting region emitting blue light, a second light emitting region emitting red light, and a third light emitting region emitting green light, and The dam structure overlaps the first light emitting region.

4. The display device according to claim 3, wherein: The filling layer overlaps the second light emitting area and the third light emitting area.

5. The display device according to claim 1, wherein: The dam structure does not overlap the non-light emitting region.

6. The display device according to claim 1, wherein: The dam structure overlaps with a portion of the non-luminous region that is adjacent to at least one of the multiple luminous regions that overlaps with the dam structure, and does not overlap with a portion of the non-luminous region that is spaced apart from at least one of the multiple luminous regions that overlaps with the dam structure.

7. The display device according to claim 1, wherein: The dam structure overlaps the non-light emitting area.

8. The display device according to claim 1, wherein: The refractive index of the dam structure is greater than the refractive index of the filling layer.

9. The display device according to claim 1, wherein: The refractive index of the dam structure is in the range of 1.5 to 2.

10. The display device according to claim 1, wherein: The refractive index of the filling layer is in the range of 1.05 to 1.

4.

11. The display device according to claim 1, wherein: The thickness of the dam structure is less than or equal to the thickness of the filling layer.

12. The display device according to claim 1, wherein: The thickness of the dam structure and the thickness of the filling layer are both in the range of 0.1 μm to 4.5 μm.

13. The display device according to claim 1, wherein: The color filter layer includes a plurality of color filters and an overcoat layer covering the plurality of color filters, and The dam structure and the filling layer contact the outer coating layer.

14. The display device according to claim 1, wherein: The wavelength conversion layer includes a light-transmitting pattern overlapping the dam structure, and a first wavelength conversion pattern and a second wavelength conversion pattern overlapping the filling layer.

15. The display device according to claim 1, wherein: The filling layer overlaps the plurality of light emitting regions and covers the dam structure.

16. The display device according to claim 15, wherein: The filling layer contacts the color filter layer, and The dam structure is spaced apart from the color filter layer.

17. The display device according to claim 1, wherein: The filling layer includes an arrangement selected from at least one of vacuum, nitrogen and inert gas, a plurality of filling particles dispersed in a filling resin, and a siloxane compound.

18. A display device, comprising: A light emitting element layer is disposed on the substrate; A thin film encapsulation layer, disposed on the light emitting element layer; a wavelength conversion layer disposed on the thin film encapsulation layer and comprising a dam, the dam defining a plurality of light emitting regions and non-light emitting regions; a dam structure disposed on the wavelength conversion layer and overlapping a light emitting region having a light conversion efficiency of 50% or less in the wavelength conversion layer among the plurality of light emitting regions; a filling layer disposed on the wavelength conversion layer and between portions of the dam structure; a color filter layer, disposed on the dam structure; as well as The substrate is disposed on the color filter layer.

19. The display device according to claim 18, wherein: The plurality of light emitting regions include a first light emitting region emitting blue light, a second light emitting region emitting red light, and a third light emitting region emitting green light, and The dam structure overlaps the first light emitting region.

20. The display device according to claim 18, wherein: The plurality of light emitting regions include a first light emitting region emitting blue light, a second light emitting region emitting red light, a third light emitting region emitting green light, and a fourth light emitting region emitting white light, and The dam structure overlaps the fourth light emitting region.

21. The display device according to claim 18, wherein: The cone angle of the dam structure is in the range of 20 degrees to 170 degrees.

22. The display device according to claim 18, wherein: An area of ​​the upper surface of the dam structure is in a range of 60% to 1000% of an area of ​​the lower surface of the dam structure.

23. A display device, comprising: A light emitting element layer is disposed on the substrate; A thin film encapsulation layer, disposed on the light emitting element layer; A wavelength conversion layer, disposed on the thin film encapsulation layer; A filling layer, disposed on the wavelength conversion layer; A color filter layer, disposed on the filling layer; as well as a substrate disposed on the color filter layer, The refractive index of the filling layer is in the range of 1.05 to 1.4, and the thickness of the filling layer is in the range of 0.1 μm to 4.5 μm.

24. The display device according to claim 23, wherein: The filling layer is disposed between the wavelength conversion layer and the color filter layer, and contacts each of the wavelength conversion layer and the color filter layer.

25. The display device according to claim 23, wherein: The filling layer includes a silicone compound or a plurality of filling particles dispersed in a filling resin.

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