Perovskite cell preparation method and perovskite cell

Abstract

The invention provides a preparation method of a perovskite battery and the perovskite battery. The preparation method of the perovskite cell comprises the following steps: providing a substrate, and forming a first transparent conductive layer on the substrate; forming a hole transport layer on one side surface, deviating from the substrate, of the first transparent conductive layer; the perovskite thin film is formed on the surface of the side, away from the substrate, of the hole transport layer, the material for forming the perovskite thin film contains amino and / or pyrazine functional groups, the amino and / or pyrazine functional groups can passivate defects at the grain boundary of the perovskite thin film, the defect state density is reduced, non-radiation energy loss is reduced, and then efficiency and stability are improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a method for preparing a perovskite cell and a perovskite cell. Background Art

[0002] Current perovskite cells dissolve several compounds of AX and BX2 in solvents such as 2-methoxyethanol and N,N-dimethylformamide (A is MA, FA, Cs, etc., B is Pb, and X is Cl, Br, I, etc.) to obtain a perovskite precursor solution, and use the prepared precursor solution to prepare a perovskite film in a one-step method. In this way, defects will appear at the grain boundaries during the solidification and crystallization process of the film layer. Summary of the invention

[0003] The present application provides a method for preparing a perovskite cell and a perovskite cell to solve the problems in the related art that the defect state density in the crystallization of the perovskite film of the perovskite cell is large, and the efficiency and stability are poor.

[0004] According to one aspect of the present application, a method for preparing a perovskite cell is provided, comprising the following steps: providing a substrate, on which a first transparent conductive layer is formed; forming a hole transport layer on a surface of the first transparent conductive layer facing away from the substrate; forming a perovskite film on a surface of the hole transport layer facing away from the substrate, wherein the material forming the perovskite film contains amino and / or pyrazine functional groups.

[0005] Optionally, the step of forming a perovskite film includes: dissolving a perovskite material containing amino and / or pyrazine functional groups into a perovskite solvent to obtain a perovskite precursor solution; and forming a perovskite film on the surface of the hole transport layer using the perovskite precursor solution.

[0006] Optionally, the perovskite material includes an AX compound, a BX2 compound and at least one pyrazine compound, the pyrazine compound includes an amino group, A is any one of MA, FA and Cs, X is any one of Cl, Br and I, and B is Pb or a multi-metal element composition containing Pb.

[0007] Optionally, the perovskite solvent includes any one or more of methoxyethanol, dimethylformamide and dimethyl sulfoxide.

[0008] Optionally, the step of forming a perovskite film on the surface of the hole transport layer includes: coating a perovskite precursor solution on the surface of the hole transport layer using a spin coating process, so that the perovskite precursor solution crystallizes during the spin coating process to form a perovskite film.

[0009] Optionally, the step of forming the perovskite film further comprises: during the process of coating the perovskite precursor solution by a spin coating process, adding an anti-solvent to the perovskite precursor solution.

[0010] Optionally, the material of the anti-solvent includes any one or more of chlorobenzene, ethyl acetate and toluene.

[0011] Optionally, the spin coating rate of the spin coating process is 2000 rpm to 5000 rpm.

[0012] Optionally, the thickness of the perovskite film is 300 nm to 1000 nm.

[0013] Optionally, after the step of forming the perovskite film, the preparation method further comprises: stacking an electron transport layer, a passivation layer, a second transparent conductive layer and an electrode layer in sequence on a surface of the perovskite film facing away from the hole transport layer to obtain a perovskite cell.

[0014] According to another aspect of the present application, a perovskite cell is provided, which is prepared by the above-mentioned method for preparing a perovskite cell.

[0015] Through the technical solution of the present application, a method for preparing a perovskite battery is provided, the method comprising: providing a substrate, on which a first transparent conductive layer is formed; forming a hole transport layer on the surface of the first transparent conductive layer facing away from the substrate; forming a perovskite film on the surface of the hole transport layer facing away from the substrate, wherein the material forming the perovskite film contains amino and / or pyrazine functional groups, wherein the amino and / or pyrazine functional groups can passivate defects at the grain boundaries of the perovskite film, reduce the defect state density, reduce non-radiative energy loss, and thereby improve efficiency and stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0017] Figure 1 It is a schematic diagram of a process for preparing a perovskite battery provided in an embodiment of the present application;

[0018] Figure 2 is a partial cross-sectional schematic diagram of a perovskite battery provided according to an embodiment of the present application;

[0019] Figure 3 It is a partial cross-sectional schematic diagram of another perovskite battery provided according to an embodiment of the present application.

[0020] The above drawings include the following reference numerals:

[0021] 10. substrate; 20. first transparent conductive layer; 30. hole transport layer; 40. perovskite film; 50. electron transport layer; 60. passivation layer; 70. second transparent conductive layer; 80. electrode layer. DETAILED DESCRIPTION

[0022] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0023] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0024] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present application described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0025] In the related technology, the perovskite battery dissolves AX and BX2 in solvents such as 2-methoxyethanol and N,N-dimethylformamide (A is MA, FA, Cs, etc., B is Pb, and X is Cl, Br, I, etc.) to obtain a perovskite precursor solution, and uses the prepared precursor solution to prepare a perovskite film through a one-step method. In this way, defects will appear at the grain boundaries during the solidification and crystallization process of the film layer.

[0026] Therefore, in order to solve the above problems, a method for preparing a perovskite battery is provided in the embodiments of the present application. Figure 1 As shown, the method for preparing the perovskite film includes:

[0027] Step S100: providing a substrate, on which a first transparent conductive layer is formed;

[0028] Step S200: forming a hole transport layer on a surface of the first transparent conductive layer facing away from the substrate;

[0029] Step S300: forming a perovskite film on a surface of the hole transport layer facing away from the substrate, wherein the material forming the perovskite film contains amino and / or pyrazine functional groups.

[0030] The preparation method of the above-mentioned perovskite battery forms a perovskite film on the side of the hole transport layer facing away from the substrate. The material forming the perovskite film contains amino and / or pyrazine functional groups, wherein the amino and / or pyrazine functional groups can passivate defects at the grain boundaries of the perovskite film, reduce the defect state density, reduce non-radiative energy loss, and thus improve efficiency and stability.

[0031] The following is a more detailed description of exemplary embodiments of the method for preparing a perovskite cell provided in accordance with the present application. However, these exemplary embodiments may be implemented in a variety of different forms and should not be construed as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art.

[0032] First, if Figure 2 As shown, the above step S100 is performed: providing a substrate 10 , on which a first transparent conductive layer 20 is formed.

[0033] Specifically, Figure 2 As shown, the substrate 10 is a semiconductor substrate, which can be any one of silicon, gallium arsenide and silicon nitride substrates. The material of the substrate 10 can be selected from fluorine-doped tin oxide (FTO) coated glass and / or indium-doped tin oxide (ITO) coated glass, but is not limited to the above types. Those skilled in the art can also reasonably select the type of substrate 10 of the perovskite cell according to actual needs.

[0034] The first transparent conductive layer 20 can carry other materials and collect photoelectrons in the perovskite battery. The first transparent conductive layer 20 can be a transparent electrode with high visible light transmittance and low resistivity. Specifically, the material of the first transparent conductive layer 20 can be any one or more of indium tin oxide, zinc oxide and tin oxide, but is not limited to the above types. Those skilled in the art can also reasonably select the material type of the first transparent conductive layer according to actual needs.

[0035] Specifically, a transparent conductive material is sputtered by a physical vapor deposition process to form a first transparent conductive layer 20 on the surface of the substrate 10. Preferably, the prepared first transparent conductive layer 20 has a square resistance of 300-500Ω and a transmittance greater than or equal to 90%, and the film thickness of the first transparent conductive layer 20 is 250-300nm. The first transparent conductive layer 20 with the above parameters can improve the conversion rate of the perovskite cell from light energy to electrical energy.

[0036] After the step of providing the substrate 10, as Figure 2 As shown, the above step S200 is performed: a hole transport layer 30 is formed on a surface of the first transparent conductive layer 20 facing away from the substrate 10 .

[0037] Specifically, the material for preparing the hole transport layer 30 can be nickel oxide. For example, the preparation method of the nickel oxide precursor solution is as follows: weigh 4.97g of nickel acetate tetrahydrate and dissolve it in 50mL of hexanediol methyl ether. At a temperature of 60°C, stir it on a magnetic stirrer for 4 hours and then let it stand overnight. The prepared nickel oxide precursor solution is spin-coated on the first transparent conductive layer 20 with a rotation speed of 2000rpm to 6000rpm, a rotation time of 20-50s, and a film thickness of 50-200nm. Through the above process conditions, the prepared hole transport layer 30 has a high degree of flatness. By making the thickness of the hole transport layer 30 within the above range, the hole transmission speed and filling efficiency are improved, and the damage of the hole transport layer to the perovskite film can be reduced, thereby improving the stability of the perovskite battery.

[0038] After the step of forming the hole transport layer 30 , step S300 is performed: forming a perovskite film 40 on a surface of the hole transport layer 30 facing away from the substrate 10 , wherein the material forming the perovskite film 40 includes amino and / or pyrazine functional groups.

[0039] Specifically, under normal circumstances, when preparing the perovskite film of the perovskite battery, a perovskite precursor solution is first prepared, and MACl, PbBr and other substances are placed in a 2-methoxyethanol solution for dissolution to obtain a perovskite precursor solution, and then the perovskite precursor solution is directly coated on the electron transport layer or the hole transport layer to directly form a perovskite film. However, this method will make the crystallization effect of the perovskite film poor. In the present application, a perovskite material having an amino group and / or a pyrazine functional group is added when preparing the perovskite film. The above-mentioned amino group and / or pyrazine functional groups can passivate the perovskite film, repair the crystallization defects of the perovskite film, and further improve the performance and efficiency of the perovskite battery.

[0040] In some optional embodiments, such as Figure 2 As shown, the steps of forming the perovskite film 40 include: dissolving a perovskite material containing an amino group and / or a pyrazine functional group into a perovskite solvent to obtain a perovskite precursor solution; and using the perovskite precursor solution to form the perovskite film 40 on the surface of the hole transport layer 30 .

[0041] In the above optional implementation, if Figure 2 As shown, in order to prepare the perovskite film 40, it is first necessary to prepare a perovskite precursor solution. Specifically, the perovskite material with amino and / or pyrazine functional groups is mixed and dissolved with a perovskite solvent to obtain a perovskite precursor solution, and then the perovskite precursor solution is set on the surface of the hole transport layer to form the perovskite film 40.

[0042] In some optional embodiments, the perovskite material includes an AX compound, a BX2 compound and at least one pyrazine compound, the pyrazine compound includes an amino group, A is any one of MA, FA and Cs, X is any one of Cl, Br and I, and B is Pb or a multi-metal element composition containing Pb.

[0043] Specifically, the perovskite material can be any one or more of CsI, PbI2, PbBr2, FAI, MABr and MACl, plus a pyrazine compound with an amino group, such as 2-aminomethylpyrazine. Those skilled in the art can reasonably select the type of perovskite material according to actual conditions, and this application does not make specific limitations.

[0044] In some optional embodiments, the perovskite solvent includes any one or more of methoxyethanol, dimethylformamide and dimethyl sulfoxide.

[0045] Exemplarily, MABr, FAI and 2-aminomethylpyrazine are added to a mixed solution of methoxyethanol and dimethylformamide, mixed thoroughly and dissolved to obtain a perovskite precursor solution. The defect state density at the grain boundary of the perovskite film prepared using the perovskite precursor solution is significantly reduced, thereby reducing non-radiative energy loss, thereby improving the efficiency and stability of the perovskite cell.

[0046] In some optional embodiments, the step of forming a perovskite film 40 on the surface of the hole transport layer 30 includes: using a spin coating process to coat a perovskite precursor solution on the surface of the hole transport layer 30, so that the perovskite precursor solution crystallizes during the spin coating process to form the perovskite film 40.

[0047] In the above optional implementation, if Figure 2 As shown, the perovskite precursor solution prepared as above is coated on the surface of the hole transport layer 30 by a spin coating process. During the coating process, a certain spin coating rate is used to allow the perovskite precursor solution film to air-dry and crystallize to form a perovskite film 40. During the spin coating process, an anti-solvent can also be added to the perovskite precursor solution to produce a certain modification effect on the formed perovskite film 40, so that the perovskite film 40 can be better formed and the film formation quality can be improved.

[0048] In some optional embodiments, the step of forming the perovskite film 40 further includes: during the process of coating the perovskite precursor solution by a spin coating process, adding an anti-solvent to the perovskite precursor solution.

[0049] In the above optional embodiment, during the process of forming the perovskite film 40, adding an anti-solvent to the perovskite precursor solution can have a certain modification effect on the formed perovskite film 40. The preparation steps of the multi-perovskite precursor solution of the present application are not specifically limited.

[0050] In some optional embodiments, the anti-solvent material includes any one or more of chlorobenzene, ethyl acetate and toluene.

[0051] In the above optional embodiments, if chlorobenzene is used as the anti-solvent material, it is beneficial to dissolve the perovskite material and to form a uniform thin layer of the photovoltaic film; if ethyl acetate is used as the anti-solvent material, it helps to control the growth and morphology of the perovskite crystals, thereby improving the photoelectric properties of the perovskite film; if toluene is used as the anti-solvent material, it helps to improve the crystallinity and grain size of the perovskite film, thereby improving the photoelectric properties of the film. Those skilled in the art can reasonably select the type of anti-solvent according to actual conditions, and this application does not make specific limitations.

[0052] In some optional implementations, the spin coating rate of the spin coating process is 2000 rpm to 5000 rpm.

[0053] In the above optional embodiment, the above spin coating rate can be used to distribute the perovskite precursor solution more evenly on the hole transport layer 30, forming a perovskite film 40 with higher flatness, thereby improving the performance of the perovskite battery.

[0054] In some optional embodiments, such as Figure 2 As shown, the thickness of the perovskite film 40 is 300 nm to 1000 nm.

[0055] In the above optional implementation, if Figure 2 As shown, by making the thickness of the prepared perovskite film 40 within the above range, the light absorption capacity of the perovskite film 40 can be improved, thereby improving the photoelectric conversion efficiency, stability and long-term performance of the perovskite cell.

[0056] In the above optional implementation, if Figure 3 As shown, after the step of forming the perovskite film 40, the preparation method further includes: stacking an electron transport layer 50, a passivation layer 60, a second transparent conductive layer 70 and an electrode layer 80 in sequence on the surface of the perovskite film 40 facing away from the hole transport layer 30 to obtain a perovskite battery.

[0057] In the above optional implementation, if Figure 3 As shown, an electron transport layer 50 is prepared on one side surface of the prepared perovskite film 40. The material of the electron transport layer 50 is C 60 , C 60Coated on the perovskite film 40, the spin coating rate is 2000rpm~5000rpm, the spinning time is 20s~60s, and the electron transport layer 50 with a film thickness of 50nm~200nm is prepared; a passivation layer 60 is prepared on the prepared electron transport layer 50, and the material of the passivation layer 60 is SnO2. SnO2 is deposited on the electron transport layer 50 by chemical vapor deposition process to obtain a passivation layer 60 with a thickness of 50nm~100nm; a second transparent conductive layer 70 is prepared on the prepared passivation layer 60, which is consistent with the steps of preparing the first transparent conductive layer 20 mentioned above and will not be repeated here; an electrode layer 80 is prepared on the prepared second transparent conductive layer 70, and the material of the electrode layer 80 can be any one or more of gold, silver and copper. The electrode layer 80 with a thickness of 100nm~150nm is prepared by evaporation. Figure 3 The first transparent conductive layer 20 and the substrate 10 in Figure 2 The description is consistent with that in the present application, and this application does not make repeated limitations.

[0058] According to another embodiment of the present application, a perovskite battery is provided, which is prepared by the preparation method of the perovskite battery in the above embodiment.

[0059] The perovskite cell obtained by the preparation method of the perovskite cell of the present application forms a perovskite film on the side of the hole transport layer facing away from the substrate, and the material forming the perovskite film includes amino and / or pyrazine functional groups, wherein the amino and / or pyrazine functional groups can passivate defects at the grain boundaries of the perovskite film, reduce the defect state density, reduce non-radiative energy loss, and thus improve efficiency and stability.

[0060] The preparation method of the above-mentioned perovskite battery and the perovskite battery of the present application will be specifically described below in combination with specific embodiments and comparative examples.

[0061] Example 1

[0062] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0063] 1. Provide a substrate, on which a first transparent conductive layer is formed. The first transparent conductive layer has a thickness of 260 nm and is made of indium tin oxide. Ultrasonic cleaning is performed in detergent, deionized water, anhydrous ethanol and isopropanol for 15 minutes respectively, and then dried with a nitrogen gun, and then transferred to a UV ozone cleaning machine for cleaning for 15 minutes;

[0064] 2. Dissolve 2PACz material in ethanol solution to obtain 0.5 mg / mL 2PACz ethanol solution, and prepare 2PACz by spin coating, with a rotation speed of 5000 rpm, a rotation time of 30 s, and a film thickness of 50 nm;

[0065] 3. On the surface of the 2PACz hole transport layer facing away from the substrate, a perovskite solution composed of MAI and PbI2 was mixed with 0.10 mg / ml aminomethylpyrazine, and the mixed solution was air-dried and crystallized by spin coating to form a perovskite film, wherein the spin coating rate was 3000 rpm, and the thickness of the formed perovskite film was 300 nm;

[0066] 4. On the surface of the methylammonium lead iodide perovskite film facing away from the 2PACz hole transport layer, an electron transport layer, a passivation layer, a second transparent conductive layer and an electrode layer are sequentially stacked to obtain a perovskite cell. The material of the electron transport layer is C 60 , obtained by vacuum evaporation, with a thickness of 20nm, the material of the passivation layer is SnO2, and the thickness is 20nm obtained by ALD, the thickness of the second transparent conductive layer is 260nm, the material is indium tin oxide, and it is obtained by PVD sputtering, and the material of the electrode layer is silver, and the thickness is 120nm obtained by vacuum evaporation.

[0067] Example 2

[0068] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0069] The difference from Example 1 is that the concentration of aminomethylpyrazine in step 3 is changed to 0.20 mg / mL.

[0070] Example 3

[0071] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0072] The difference from Example 1 is that in step 3, aminomethylpyrazine is replaced by pyrazine at a concentration of 0.10 mg / mL.

[0073] Example 4

[0074] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0075] The difference from Example 1 is that in step 3, aminomethylpyrazine is replaced by pyrazine at a concentration of 0.20 mg / mL.

[0076] Example 5

[0077] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0078] The difference from Example 1 is that in step 3, aminomethylpyrazine is not added to the perovskite precursor solution.

[0079] The performance of the perovskite battery prepared by the preparation method of the perovskite battery in the above embodiments 1 to 7 was tested, and the test results are as follows:

[0080] Table 1

[0081] Voc Jsc FF PCE Example 1 1.18 24.5 78.52 22.70 Example 2 1.20 24.7 78.99 23.41 Example 3 1.15 23.8 76.33 20.89 Example 4 1.17 24.1 76.55 21.58 Example 5 1.08 22.78 72.13 17.75

[0082] It can be seen from the open circuit voltage, short circuit current density, fill factor and photoelectric efficiency in the above table that, compared with the embodiments without adding pyrazine / aminomethylpyrazine, the photoelectric properties of the embodiments with added pyrazine / aminomethylpyrazine are improved. At the same time, as the concentration of added pyrazine / aminomethylpyrazine increases, the effect of improving the photoelectric performance of the battery is better.

[0083] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0084] The preparation method of the above-mentioned perovskite battery of the embodiment of the present application is adopted, by forming a perovskite film on the side of the hole transport layer away from the substrate, and the material forming the perovskite film includes amino and / or pyrazine functional groups, wherein the amino and / or pyrazine functional groups can passivate defects at the grain boundaries of the perovskite film, reduce the defect state density, reduce non-radiative energy loss, and thereby improve efficiency and stability.

[0085] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0086] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A method for preparing a perovskite battery, characterized in that: The following steps are involved: Providing a substrate, on which a first transparent conductive layer is formed; forming a hole transport layer on a surface of the first transparent conductive layer facing away from the substrate; A perovskite film is formed on a surface of the hole transport layer that is away from the substrate, and a material forming the perovskite film contains amino and / or pyrazine functional groups.

2. The method for preparing a perovskite battery according to claim 1, characterized in that: The steps of forming the perovskite film include: dissolving the perovskite material containing the amino group and / or the pyrazine functional group into a perovskite solvent to obtain a perovskite precursor solution; The perovskite precursor solution is used to form the perovskite film on the surface of the hole transport layer.

3. The method for preparing a perovskite battery according to claim 2, characterized in that: The perovskite material includes an AX compound, a BX2 compound and at least one pyrazine compound, wherein the pyrazine compound includes an amino group, A is any one of MA, FA and Cs, X is any one of Cl, Br and I, and B is Pb or a multi-metal element composition containing Pb.

4. The method for preparing a perovskite battery according to claim 2, characterized in that: The perovskite solvent includes any one or more of methoxyethanol, dimethylformamide and dimethyl sulfoxide.

5. The method for preparing a perovskite battery according to claim 2, characterized in that: The step of forming the perovskite film on the surface of the hole transport layer comprises: The perovskite precursor solution is coated on the surface of the hole transport layer by a spin coating process, so that the perovskite precursor solution is crystallized during the spin coating process to form the perovskite film.

6. The method for preparing a perovskite battery according to claim 5, characterized in that: The step of forming the perovskite film further comprises: In the process of coating the perovskite precursor solution by a spin coating process, an anti-solvent is added dropwise to the perovskite precursor solution.

7. The method for preparing a perovskite battery according to claim 6, characterized in that: The material of the anti-solvent includes any one or more of chlorobenzene, ethyl acetate and toluene.

8. The method for preparing a perovskite battery according to claim 7, characterized in that: The spin coating rate of the spin coating process is 2000 rpm to 5000 rpm.

9. The method for preparing a perovskite battery according to any one of claims 1 to 8, characterized in that: The thickness of the perovskite film is 300nm-1000nm.

10. The method for preparing a perovskite battery according to claim 1, characterized in that: After the step of forming the perovskite film, the preparation method further comprises: An electron transport layer, a passivation layer, a second transparent conductive layer and an electrode layer are sequentially stacked on the surface of the perovskite film on the side away from the hole transport layer to obtain the perovskite cell.

11. A perovskite battery, characterized in that: The perovskite battery is prepared by the preparation method of any one of claims 1 to 10.

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