Preparation method of perovskite thin film and perovskite battery

Abstract

The invention provides a preparation method of a perovskite thin film and a perovskite battery. The method comprises the following steps: providing a substrate; forming an inorganic phase on one side of the substrate; an organic phase is formed on the side, away from the substrate, of the inorganic phase to obtain the perovskite thin film, and the substrate is in a heating state in the process of forming the organic phase. The substrate is in the heating state in the process of preparing the perovskite thin film, so that the organic phase is smoother in the process of deeply infiltrating into the inorganic phase, the infiltrating degree is deeper, the inorganic phase is completely converted, and then the perovskite thin film uniformly covering the suede is obtained. The problem that the perovskite thin film of the perovskite cell is non-uniformly grown on the suede in the prior art is solved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a method for preparing a perovskite film, a method for preparing a perovskite cell, and a method for preparing a perovskite cell and a stacked cell. Background Art

[0002] At present, vacuum deposition-based methods have been applied in the optoelectronics industry and have broad application prospects in the high-throughput preparation of devices. In the sequential deposition process of perovskite films, although the deposition conditions (temperature and partial pressure) of each (especially organic) precursor can be optimized independently, the penetration depth of methylamine iodide (MAI) in the evaporated lead halide film is limited, which further causes the PbI 2 Incomplete conversion reduces the quality of the perovskite film and ultimately affects device performance. In the prior art, the crystal growth process of the film is mainly regulated by solution additives, but this is not compatible with vacuum deposition; in addition, although the multilayer organic / inorganic phase layer-by-layer deposition method is conducive to the formation of perovskite, its preparation process is cumbersome and not suitable for industrial production. Summary of the invention

[0003] The present application provides a method for preparing a perovskite film, a method for preparing a perovskite battery, a method for preparing a perovskite battery and a stacked battery, so as to solve the problem of uneven growth of the perovskite film of the perovskite battery on a suede surface in the related art.

[0004] According to one aspect of the present application, a method for preparing a perovskite film is provided, comprising the following steps: providing a substrate; forming an inorganic phase on one side of the substrate; forming an organic phase on a side of the inorganic phase away from the substrate to obtain the perovskite film, wherein during the formation of the organic phase, the substrate is in a heated state.

[0005] Optionally, the organic phase and the inorganic phase are formed by a vacuum evaporation process.

[0006] Optionally, the vacuum degree of the vacuum evaporation process is 0Pa to 1×10 -5 Pa, the evaporation rate is The heating temperature of the substrate is 50°C to 80°C.

[0007] According to another aspect of the present application, a method for preparing a perovskite cell is provided, comprising the following steps: providing a substrate, on which a first transparent conductive layer is disposed; forming a hole transport layer on a side of the first transparent conductive layer facing away from the substrate; forming a perovskite film prepared by the method for preparing a perovskite film on a side of the hole transport layer facing away from the first transparent conductive layer; forming an electron transport layer on a side of the perovskite film facing away from the hole transport layer; and forming an electrode layer on a side of the electron transport layer facing away from the perovskite film.

[0008] Optionally, the process for forming the hole transport layer includes at least one of the following: a spin coating process and an evaporation process.

[0009] Optionally, before the step of forming the electrode layer, the method for preparing the perovskite battery further comprises: forming a buffer layer on a side of the electron transport layer facing away from the perovskite film.

[0010] Optionally, after the step of forming the buffer layer, the method for preparing the perovskite cell further comprises: forming a second transparent conductive layer on a side of the buffer layer away from the perovskite film.

[0011] Optionally, the process for forming the electrode layer includes at least one of the following: screen printing, thermal evaporation and magnetron sputtering.

[0012] According to another aspect of the present application, a perovskite cell is provided, which is prepared by the above-mentioned method for preparing a perovskite cell.

[0013] According to another aspect of the present application, a method for preparing a stacked cell is provided, comprising providing a crystalline silicon bottom cell; and using the method for preparing a perovskite cell to form a perovskite top cell on the crystalline silicon bottom cell to obtain the stacked cell.

[0014] According to another aspect of the present application, a method for preparing a perovskite film is provided, comprising: providing a substrate, forming an inorganic phase on one side of the substrate, forming an organic phase on the side of the inorganic phase away from the substrate, and in the process of forming the organic phase, the substrate is in a heated state to obtain a perovskite film. By heating the substrate during the preparation of the perovskite film, the organic phase can penetrate more smoothly and more deeply into the inorganic phase, so that the inorganic phase is completely transformed, thereby obtaining a perovskite film uniformly covered on the velvet surface. The problem of uneven growth of the perovskite film of the perovskite battery on the velvet surface in the related art is solved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0016] Figure 1 It is a schematic diagram of a process for preparing a perovskite film according to an embodiment of the present application;

[0017] Figure 2 In the method for preparing the perovskite film provided in the embodiment of the present application, a schematic diagram of the cross-sectional structure of the substrate is provided;

[0018] Figure 3 is Figure 2 A schematic diagram of the cross-sectional structure of the substrate after the inorganic phase is formed on the substrate provided in;

[0019] Figure 4 is Figure 3 A schematic diagram of the cross-sectional structure of the matrix after the organic phase is formed on the inorganic phase formed in the process;

[0020] Figure 5 It is a schematic diagram of a process for preparing a perovskite battery provided in an embodiment of the present application;

[0021] Figure 6 It is a schematic diagram of the cross-sectional structure of a substrate after providing a substrate having a first transparent conductive layer in the preparation method of the perovskite cell provided in an embodiment of the present application;

[0022] Figure 7 is Figure 6 A schematic diagram of the cross-sectional structure of the substrate after a hole transport layer is formed on the first transparent conductive layer;

[0023] Figure 8 is Figure 7 Schematic diagram of the cross-sectional structure of the substrate after a perovskite film is formed on the hole transport layer formed in the process;

[0024] Fig. 9 is Figure 8 A schematic diagram of the cross-sectional structure of the substrate after a buffer layer, a second transparent conductive layer and an electrode layer are sequentially formed on the perovskite film formed in the process;

[0025] Fig.10 It is the JV characteristic curve of the perovskite device prepared according to the embodiments and comparative examples provided in this application.

[0026] The above drawings include the following reference numerals:

[0027] 10. Substrate; 20. Fixing component; 30. Inorganic phase; 40. Inorganic phase source; 50. Organic phase; 60. Organic phase source; 70. Perovskite film; 80. Base; 90. First transparent conductive layer; 100. Hole transport layer; 110. Electron transport layer; 120. Buffer layer; 130. Second transparent conductive layer; 140. Electrode layer. DETAILED DESCRIPTION

[0028] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0029] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0030] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present application described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0031] In the process of preparing perovskite films in the related art, the penetration depth of MAI in the evaporated lead halide film is limited, which further causes the PbI 2 Incomplete conversion reduces the quality of the perovskite film and ultimately affects device performance. In the prior art, the crystal growth process of the film is mainly regulated by solution additives, but this is not compatible with vacuum deposition; in addition, although the multilayer organic / inorganic phase layer-by-layer deposition method is conducive to the formation of perovskite, its preparation process is cumbersome and not suitable for industrial production.

[0032] Therefore, in order to solve the above problems, a method for preparing a perovskite film is provided in the embodiments of the present application. Figure 1 As shown, the method for preparing the perovskite film includes:

[0033] Step S201: providing a substrate;

[0034] Step S202: forming an inorganic phase on one side of the substrate;

[0035] Step S203: forming an organic phase on a side of the inorganic phase away from the substrate to obtain the perovskite film. During the process of forming the organic phase, the substrate is in a heated state.

[0036] The method for preparing the above-mentioned perovskite film first provides a substrate, and sequentially forms an inorganic phase and an organic phase on one side of the substrate, and heats the above-mentioned substrate at least during the process of forming the organic phase, so that the above-mentioned substrate is at a preset temperature. The organic phase can penetrate into the above-mentioned inorganic phase faster and better at the preset temperature, so that the inorganic phase can be transformed more completely to form a more complete perovskite film, so that the above-mentioned perovskite film can cover the textured surface of the perovskite battery more evenly.

[0037] The exemplary embodiments of the method for preparing the perovskite film provided in the present application will be described in more detail below. However, these exemplary embodiments can be implemented in a variety of different forms and should not be interpreted as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art.

[0038] First, if Figure 2 As shown, the above step S201 is performed: providing a substrate 10 .

[0039] The substrate 10 can be a glass or semiconductor substrate, or other substrates with a supporting function. The substrate 10 here is a substrate 10 for preparing a perovskite film. After the perovskite film is formed, the perovskite film will be transferred from the substrate 10 to other structures. Alternatively, the inorganic phase can be directly prepared on the semi-finished cell. The fixing component 20 is used to fix the substrate 10 to facilitate the subsequent preparation of the perovskite film.

[0040] Specifically, the material of the substrate 10 can be selected from fluorine-doped tin oxide (FTO) coated glass and / or indium-doped tin oxide (ITO) coated glass, but is not limited to the above types. Those skilled in the art can also reasonably select the type of the above substrate 10 according to actual needs;

[0041] After the step of providing the substrate, as Figure 3 As shown, the step S202 is performed: an inorganic phase 30 is formed on one side of the substrate 10 .

[0042] Specifically, Figure 3As shown, the inorganic phase source 40 sprays the inorganic phase material onto the substrate 10 to form the inorganic phase 30 on the substrate 10 .

[0043] After the step of forming an inorganic phase on one side of the substrate, Figure 4 As shown, step S203 is performed: an organic phase 50 is formed on the side of the inorganic phase 30 away from the substrate 10 to obtain the perovskite film 70. During the process of forming the organic phase 50, the substrate 10 is in a heated state.

[0044] Specifically, Figure 4 As shown, the organic phase source 60 sprays the organic phase material onto the inorganic phase 30 to form the organic phase 50, and the inorganic phase 30 and the organic phase 50 form the perovskite film 70. Under normal circumstances, the organic phase 50 will penetrate into the inorganic phase 30, the penetration depth is limited, and the conversion of the inorganic phase 30 is not complete. In the process of forming the organic phase 50, the substrate 10 is kept in a heated state to promote the penetration of the organic phase 50 into the inorganic phase 30, so that the inorganic phase 30 is completely converted to form a more complete perovskite film 70, and the complete perovskite film 70 is more evenly covered on the textured surface of the semi-finished battery.

[0045] In some optional embodiments, the organic phase and the inorganic phase are formed by a vacuum evaporation process.

[0046] In the above optional embodiment, the inorganic phase source is an inorganic material PbI 2 The inorganic phase is obtained by evaporation onto the substrate, and the organic phase source evaporates the organic material MAI onto the inorganic phase to obtain the organic phase.

[0047] In some optional embodiments, the vacuum degree of the vacuum evaporation process is 0Pa to 1×10 -5 Pa, the evaporation rate is The heating temperature of the substrate is 50°C to 80°C.

[0048] Generally, the inorganic phase and the organic phase are deposited sequentially and then annealed to promote their reaction and generate perovskite. However, the results show that the PbI 2 If there is too much residue, it is difficult to react completely and it is easy to form a recombination center, which affects the transport of carriers.

[0049] In the present application, the substrate is heated to 50°C to 80°C during the deposition of the organic phase, which is conducive to the organic phase infiltrating into the inorganic phase film during the deposition process, so that PbI 2The reaction is complete and promotes the nucleation of perovskite crystals, laying a good foundation for the subsequent perovskite crystallization and film formation process, improving the quality of the film, and thus effectively improving the efficiency and stability of the stacked battery.

[0050] According to another aspect of the present application, a method for preparing a perovskite battery is provided, such as Figure 5 As shown, the following steps are included:

[0051] Step S301: providing a substrate, on which a first transparent conductive layer is disposed;

[0052] Step S302: forming a hole transport layer on the side of the first transparent conductive layer facing away from the substrate;

[0053] Step S303: forming a perovskite film prepared by the above-mentioned perovskite film preparation method on a side of the above-mentioned hole transport layer away from the above-mentioned first transparent conductive layer;

[0054] Step S304: forming an electron transport layer on a side of the perovskite film away from the hole transport layer;

[0055] Step S305: forming an electrode layer on a side of the electron transport layer away from the perovskite film.

[0056] The preparation method of the above-mentioned perovskite battery newly provides a substrate, and sequentially forms a first transparent conductive layer, a hole transport layer, a perovskite film, an electron transport layer and an electrode layer on one side of the substrate, wherein the perovskite film can be prepared separately by the above-mentioned preparation method of the perovskite film. The perovskite film of the perovskite battery prepared by the above-mentioned preparation method of the perovskite battery has a uniform texture, thereby improving the performance of the perovskite battery.

[0057] First, if Figure 6 As shown, step S301 is performed: providing a substrate 80 , on which a first transparent conductive layer 90 is disposed.

[0058] Specifically, Figure 6As shown, the substrate 80 can be a semiconductor substrate, such as any one of silicon, gallium arsenide and silicon nitride substrates. The substrate 80 can also be other types of photovoltaic cell structures, such as crystalline silicon cells. The above-mentioned preparation method of the embodiment of the present application is used to form a stacked photovoltaic cell by forming a perovskite cell on the different types of photovoltaic cell structures. The crystalline silicon cell can be a heterojunction solar cell (HJT, Homojunction Solar Cell), a tunnel oxide passivated contact cell (TOPCon, Tunnel Oxide Passivated Contact), a back contact cell (IBC, Interdigitated Back-contact or ABC, All Back Contact) type, etc.

[0059] After the step of providing a substrate is completed, Figure 7 As shown, step S302 is performed: a hole transport layer 100 is formed on the side of the first transparent conductive layer 90 facing away from the substrate 80 .

[0060] Specifically, Figure 7 As shown, the first transparent conductive layer 90 has the function of carrying other materials and collecting photoelectrons. It is a transparent electrode with high visible light transmittance and low resistivity. The material of the first transparent conductive layer 90 can be any one or more of indium tin oxide, zinc oxide and tin oxide, but is not limited to the above types. Those skilled in the art can also reasonably select the material types of the substrate and the first transparent conductive layer according to actual needs.

[0061] After the step of forming a hole transport layer on the side of the first transparent conductive layer facing away from the substrate, Figure 8 As shown, step S303 is performed: the perovskite film 70 is prepared by the preparation method of the perovskite film formed on the side of the hole transport layer 100 away from the first transparent conductive layer 90 .

[0062] Specifically, after the perovskite film 70 is prepared on the substrate by the above-mentioned perovskite film preparation method, the above-mentioned perovskite film 70 is transferred to the above-mentioned hole transport layer 100. The perovskite film 70 has a uniform texture and can well cover the hole transport layer 100.

[0063] After the step of forming a perovskite film on the side of the hole transport layer away from the first transparent conductive layer is completed, Fig. 9 As shown, step S304 is performed: an electron transport layer 110 is formed on a side of the perovskite film 70 away from the hole transport layer 100 .

[0064] Specifically, Fig. 9As shown, the electron transport layer 110 can be formed by physical vapor deposition, chemical vapor deposition and vacuum evaporation. Those skilled in the art can reasonably select the preparation process of the electron transport layer according to actual conditions. The material of the electron transport layer 110 can be PCBM or C60.

[0065] In some optional embodiments, such as Fig. 9 As shown, before the step of forming the electrode layer, the method for preparing the perovskite battery further includes: forming a buffer layer 120 on a side of the electron transport layer 110 away from the perovskite film 70 .

[0066] In the above optional embodiment, the above buffer layer can be prepared by atomic layer deposition and physical vapor deposition, and the material can be SnO 2 .

[0067] In some optional embodiments, such as Fig. 9 As shown, after the step of forming the buffer layer 120 , the method for preparing the perovskite cell further includes: forming a second transparent conductive layer 130 on a side of the buffer layer 120 away from the perovskite film 70 .

[0068] In the above optional implementation manner, the material of the second transparent conductive layer may be any one or more of ITO, IZO, AZO and IZrO, and may be prepared by magnetron sputtering.

[0069] After the step of forming an electron transport layer on the side of the perovskite film away from the hole transport layer is completed, Fig. 9 As shown, step S305 is performed: an electrode layer 140 is formed on a side of the electron transport layer 110 away from the perovskite film 70 .

[0070] Specifically, Fig. 9 As shown, the electrode layer 140 can be formed by screen printing, thermal evaporation, physical vapor deposition, chemical vapor deposition and magnetron sputtering. Those skilled in the art can reasonably select the preparation process of the electrode layer according to actual conditions. The material of the electrode layer 140 can be any one or more of silver, copper and gold.

[0071] Figure 3 and Figure 4 The fixing component 20 and Figure 4 The inorganic phase source 40 and Figure 2 The description is consistent with that in Figure 8 and Fig. 9 The base 80 and Fig. 9 The first transparent conductive layer 90 and Figure 6 The description in is consistent.

[0072] In some optional embodiments, the process for forming the hole transport layer includes at least one of the following: a spin coating process and an evaporation process.

[0073] In the above optional embodiment, the spin coating rate can be 2000rpm~7000rpm, and the material of the hole transport layer can be one or more of 2PACz, Me-2PACz, MeO-2PACz, Me-4PACz and MeO-4PACz, which can be prepared by spin coating, evaporation and chain immersion.

[0074] According to another embodiment of the present application, a method for preparing a stacked cell is also provided, including providing a crystalline silicon bottom cell; using the above-mentioned method for preparing a perovskite cell to form a perovskite top cell on the above-mentioned crystalline silicon bottom cell to obtain the above-mentioned stacked cell.

[0075] The stacked battery obtained by the preparation method of the stacked battery of the present application forms a perovskite film on the side of the hole transport layer of the perovskite top battery facing away from the substrate. The above-mentioned perovskite film is prepared by the above-mentioned perovskite film preparation method. The texture of the formed perovskite film is uniform and complete, thereby improving the device performance of the stacked perovskite battery.

[0076] The preparation method of the above-mentioned perovskite battery and the perovskite battery of the present application will be specifically described below in combination with specific embodiments and comparative examples.

[0077] Example 1

[0078] This embodiment provides a method for preparing a perovskite film, comprising the following steps:

[0079] 1. Provide substrate;

[0080] 2. An inorganic phase is formed on one side of the substrate by vacuum evaporation process, and the vacuum degree is 1×10 -5 Pa, the evaporation rate is

[0081] 3. Forming an organic phase on the side of the inorganic phase away from the substrate to obtain the perovskite film, during the process of forming the organic phase, the substrate is in a heated state; the organic phase is prepared by a vacuum evaporation process, and the vacuum degree is 1×10 -5 Pa, the evaporation rate is The temperature of the substrate was 70°C.

[0082] Comparative Example 1

[0083] This embodiment provides a method for preparing a perovskite film, comprising the following steps:

[0084] 1. Provide substrate;

[0085] 2. An inorganic phase is formed on one side of the substrate by vacuum evaporation process, and the vacuum degree is 1×10 -5 Pa, the evaporation rate is

[0086] 3. Forming an organic phase on the side of the inorganic phase away from the substrate to obtain the perovskite film. During the formation of the organic phase, the substrate is not heated. The organic phase is prepared by vacuum evaporation process with a vacuum degree of 1×10 -5 Pa, the evaporation rate is

[0087] The perovskite battery provided in the embodiment of the present application includes:

[0088] Silicon substrate, first transparent conductive layer, hole transport layer, electron transport layer, buffer layer, second transparent conductive layer, electrode layer, wherein the thickness of the silicon substrate is 100 μm, the material of the first transparent conductive layer is indium tin oxide, the thickness is 10 nm, the material of the hole transport layer is 2PACz, the thickness is 2 nm, the material of the electron transport layer is C60, the thickness is 10 nm, and the material of the buffer layer is SnO 2 , with a thickness of 10 nm, the material of the second transparent conductive layer is indium tin oxide, with a thickness of 10 nm, and the material of the electrode layer is silver, with a thickness of 10 nm.

[0089] The performance of the perovskite battery prepared by the preparation method of the perovskite film in the above-mentioned Example 1 and Comparative Example 1 was tested, and the test results are as follows:

[0090] Table 1 Perovskite battery device performance

[0091] Voc / V <![CDATA[Jsc / mA.cm -2 ]]> FF% PCE % Example 1 1.18 20.09 78.97 18.86 Comparative Example 1 1.18 19.07 74.54 16.89

[0092] Table 2 Perovskite / tandem cell device performance

[0093] Voc / V <![CDATA[Jsc / mA.cm -2 ]]> FF% PCE % Example 1 1.85 18.72 73.91 25.56 Comparative Example 1 1.81 18.79 71.06 24.23

[0094] like Fig.10 As shown, the JV characteristic curves of perovskite devices prepared under different conditions are shown, with the horizontal axis being the open circuit voltage (Voltage) and the vertical axis being the current density (Current Density). The other conditions are the same, and the only controlled variable is the substrate heating. The device with better performance is prepared under a substrate of 70°C. The battery provides a short-circuit current density (J SC ) is 20.09 mA / cm 2, open circuit voltage (Voc) of 1.18V, fill factor (FF) of up to 78.97%, and photoelectric conversion efficiency (PCE) of 18.86%. Its high performance can be attributed to the continuous low-pollution vacuum deposition process, good crystallinity, and continuous, uniform and pinhole-free perovskite film throughout the device manufacturing process. In contrast, the device prepared under unheated substrate conditions showed a lower PCE (16.89%). This is due to the surface PbI 2 The reaction with organic salts forms a perovskite barrier layer, which affects the further penetration and reaction of organic salts, resulting in reduced device performance. Similarly, based on the stacked device, the condition of heating the substrate to 70°C also achieved higher device performance, with a PCE of 25.56%.

[0095] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0096] By adopting the above-mentioned perovskite battery preparation method of the embodiment of the present application, a perovskite particle layer is arranged on one side of the hole transport layer, thereby increasing the adhesion of the first perovskite precursor solution on the hole transport layer when preparing the perovskite film, and improving the coverage of the perovskite film on the hole transport layer.

[0097] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0098] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A method for preparing a perovskite film, characterized in that: The following steps are involved: providing a substrate; forming an inorganic phase on one side of the substrate; An organic phase is formed on the side of the inorganic phase facing away from the substrate to obtain the perovskite film. During the process of forming the organic phase, the substrate is in a heated state.

2. The method for preparing a perovskite thin film according to claim 1, characterized in that: The organic phase and the inorganic phase are formed by vacuum evaporation process.

3. The method for preparing a perovskite thin film according to claim 2, characterized in that: The vacuum degree of the vacuum evaporation process is 0Pa~1×10 -5 Pa, the evaporation rate is The heating temperature of the substrate is 50°C to 80°C.

4. A method for preparing a perovskite battery, characterized in that: The following steps are involved: Providing a substrate, on which a first transparent conductive layer is disposed; forming a hole transport layer on the side of the first transparent conductive layer facing away from the substrate; A perovskite film prepared by the method for preparing a perovskite film according to any one of claims 1 to 3 is formed on a side of the hole transport layer away from the first transparent conductive layer; forming an electron transport layer on a side of the perovskite film away from the hole transport layer; An electrode layer is formed on a side of the electron transport layer facing away from the perovskite film.

5. The method for preparing a perovskite battery according to claim 4, characterized in that: The process for forming the hole transport layer includes at least one of the following: a spin coating process and an evaporation process.

6. The method for preparing a perovskite battery according to claim 4, characterized in that: Before the step of forming the electrode layer, the method for preparing the perovskite cell further comprises: A buffer layer is formed on a side of the electron transport layer facing away from the perovskite film.

7. The method for preparing a perovskite battery according to claim 6, characterized in that: After the step of forming the buffer layer, the method for preparing the perovskite cell further comprises: A second transparent conductive layer is formed on a side of the buffer layer facing away from the perovskite film.

8. The method for preparing a perovskite battery according to claim 4, characterized in that: The electrode layer formation process includes at least one of the following: screen printing, thermal evaporation and magnetron sputtering.

9. A perovskite battery, characterized in that: The perovskite battery is prepared by the preparation method of any one of claims 5 to 8.

10. A method for preparing a laminated battery, characterized in that: include: Provide crystalline silicon bottom cells; The method for preparing a perovskite cell according to any one of claims 5 to 8 is adopted to form a perovskite top cell on the crystalline silicon bottom cell to obtain the stacked cell.

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