Perovskite cell and preparation method thereof

Abstract

The invention provides a perovskite battery and a preparation method of the perovskite battery. The method comprises the steps that a substrate is provided, a tunneling composite layer is arranged on the substrate, and the substrate is a conductive substrate or a bottom battery; a hole transport layer is formed on the side, away from the substrate, of the tunneling composite layer, the material of the hole transport layer is at least doped with one metal element, and the metal element is a group I and / or a group II; and forming a perovskite thin film on one side, deviating from the tunneling composite layer, of the hole transport layer. According to the perovskite cell, the conductivity, the hole mobility and the work function of the hole transport layer can be effectively improved while the optical performance of the perovskite cell is not lost by doping the I-group and / or II-group metal elements in the hole transport layer, so that the hole extraction of the hole transport layer is improved, the charge recombination is reduced, and the stability of the perovskite cell is improved.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a perovskite cell and a method for preparing the perovskite cell. Background Art

[0002] In the structure of solar cells, there are two main factors that limit the x Performance of pin perovskite solar cells with hole transport layer, i.e. NiO x The low intrinsic conductivity and mismatched Fermi level of the hole transport layer relative to the perovskite layer will lead to increased charge recombination and reduced hole extraction in the perovskite cell. However, the solutions in the existing technology will lead to uneven performance improvement of the perovskite cell and are not widely used in perovskite / tunneling oxide passivation tandem solar cells. Summary of the invention

[0003] The present application provides a perovskite battery and a method for preparing a perovskite battery to solve the problems of increased charge recombination, reduced hole extraction, and reduced stability in perovskite batteries in the related art.

[0004] According to one aspect of the present application, a method for preparing a perovskite battery is provided, comprising the following steps: providing a substrate, having a tunneling composite layer on the substrate, the substrate being a conductive substrate or a bottom battery; forming a hole transport layer on a side of the tunneling composite layer facing away from the substrate, the material of the hole transport layer being doped with at least one metal element, the metal element being of group I and / or group II; and forming a perovskite film on a side of the hole transport layer facing away from the tunneling composite layer.

[0005] Optionally, the step of forming a hole transport layer includes: mixing a first organic metal compound, a second organic metal compound, a third organic metal compound and an organic solvent to obtain a precursor solution of the hole transport layer, wherein the second organic metal compound contains a Group I metal element and the third organic metal compound contains a Group II metal element; thermally spraying the precursor solution on a surface of the tunneling composite layer facing away from the substrate, and annealing the hole transport layer solution to obtain the hole transport layer.

[0006] Optionally, the first organometallic compound includes nickel acetylacetonate, the second organometallic compound includes lithium acetate, and the third organometallic compound includes barium acetate.

[0007] Optionally, the thermal spraying temperature is 350°C to 450°C.

[0008] Optionally, the annealing temperature is 350° C. to 450° C., and the annealing time is 40 min to 100 min.

[0009] Optionally, the molar ratio of the first organometallic compound to the second organometallic compound is (18:1) to (20:1), the molar ratio of the first organometallic compound to the third organometallic compound is (3:1) to (5:1), and the molar ratio of the second organometallic compound to the third organometallic compound is (1:5) to (1:4).

[0010] Optionally, the thickness of the hole transport layer is 20 nm to 40 nm.

[0011] Optionally, the concentration of the precursor solution is 20 mol / mL to 60 mol / mL.

[0012] Optionally, the preparation method further comprises: stacking an electron transport layer, a buffer layer, a transparent conductive layer and an electrode layer in sequence on a surface of the perovskite film facing away from the hole transport layer.

[0013] According to another aspect of the present application, a perovskite cell is provided, which is prepared by the above-mentioned method for preparing a perovskite cell.

[0014] Through the technical solution of the present application, a method for preparing a perovskite battery is provided, the method comprising: providing a substrate, a tunneling composite layer being provided on the substrate, the substrate being a conductive substrate or a bottom battery; forming a hole transport layer on a side of the tunneling composite layer away from the substrate, the material of the hole transport layer being doped with at least one metal element, the metal element being of group I and / or group II; forming a perovskite film on a side of the hole transport layer away from the tunneling composite layer; by doping the group I and / or group II metal elements in the hole transport layer, the conductivity, hole mobility and work function of the hole transport layer can be effectively improved without losing the optical properties of the perovskite battery, thereby improving the hole extraction of the hole transport layer, reducing charge recombination, and improving the stability of the perovskite battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0016] Figure 1 It is a schematic diagram of a process for preparing a perovskite battery provided in an embodiment of the present application;

[0017] Figure 2 It is a schematic cross-sectional view of a substrate after a tunneling composite layer is formed on a substrate in a method for preparing a perovskite battery provided in an embodiment of the present application;

[0018] Figure 3 is Figure 2 Schematic diagram of the cross section of the substrate after a hole transport layer is formed on the tunneling composite layer;

[0019] Figure 4 is Figure 3 Schematic diagram of the cross-sectional structure of the substrate after a perovskite film is formed on the hole transport layer in FIG.

[0020] Figure 5 is Figure 4 Schematic diagram of the cross-sectional structure of the substrate after an electron transport layer, a buffer layer, a transparent conductive layer and an electrode layer are sequentially formed on the perovskite film.

[0021] The above drawings include the following reference numerals:

[0022] 10. Substrate; 20. Tunneling composite layer; 30. Hole transport layer; 40. Perovskite film; 50. Electron transport layer; 60. Buffer layer; 70. Transparent conductive layer; 80. Electrode layer; 90. Perovskite cell. DETAILED DESCRIPTION

[0023] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0024] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0025] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present application described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0026] In the related art, there are two main factors that limit the performance of pin perovskite solar cells based on NiOx hole transport layers. The low intrinsic conductivity and mismatched Fermi level of the NiOx hole transport layer relative to the perovskite layer will lead to increased charge recombination and reduced hole extraction in the perovskite cell. However, the solutions in the prior art will lead to uneven performance improvement of the perovskite cell and are not widely used in perovskite / tunneling oxide passivation stacked solar cells.

[0027] Therefore, in order to solve the above problems, a method for preparing a perovskite battery is provided in the embodiments of the present application. Figure 1 As shown, including:

[0028] Step S1: providing a substrate, on which a tunneling composite layer is disposed, and the substrate is a conductive substrate or a bottom battery;

[0029] Step S2: forming a hole transport layer on the side of the tunneling composite layer away from the substrate, wherein the material of the hole transport layer is doped with at least one metal element, and the metal element is group I and / or group II;

[0030] Step S3: forming a perovskite film on a side of the hole transport layer away from the tunneling composite layer.

[0031] By doping the above-mentioned hole transport layer with group I and / or group II metal elements, the conductivity, hole mobility and work function of the hole transport layer can be effectively improved without losing the optical properties of the perovskite cell, thereby improving the hole extraction of the hole transport layer, reducing charge recombination, and improving the stability of the perovskite cell. A high-quality, uniform perovskite film can also be formed on the hole transport layer doped with group I and / or group II metal elements.

[0032] The following is a more detailed description of exemplary embodiments of the method for preparing a perovskite cell provided in accordance with the present application. However, these exemplary embodiments may be implemented in a variety of different forms and should not be construed as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art.

[0033] First, if Figure 2 As shown, step S1 is performed: providing a substrate 10, on which a tunneling composite layer 20 is disposed, and the substrate 10 is a conductive substrate or a bottom battery.

[0034] Specifically, the tunneling composite layer 20 is located on one side surface of the substrate 10, wherein the thickness of the tunneling composite layer 20 is very thin, generally a few nanometers. When external photons enter the perovskite battery, they will excite the electrons in the perovskite battery and push the electrons toward the tunneling composite layer 20. In the tunneling composite layer 20, the electrons pass through the band gap to the other side through the tunneling effect. The electrons will generate voltage and current, thereby converting light energy into electrical energy. The tunneling composite layer 20 uses the tunneling effect to reduce the height of the energy barrier for electrons to pass through the tunneling composite layer 20, thereby improving the efficiency of electron transmission, and thereby improving the energy conversion efficiency of the perovskite battery.

[0035] In the above optional embodiment, the above substrate can be a conductive substrate or a bottom cell, wherein the conductive substrate can be any one of a copper conductive substrate, a ceramic conductive substrate and a stainless steel conductive substrate; when the substrate is a bottom cell, the bottom cell and the perovskite cell together form a stacked cell, and the bottom cell can be a crystalline silicon bottom cell, and the crystalline silicon bottom cell can be a single crystal silicon cell, a polycrystalline silicon cell and a thin film silicon cell. Those skilled in the art can reasonably select the type of substrate according to actual conditions, and this application does not make specific limitations. The main material of the single crystal silicon cell is high-purity single crystal silicon, which has high conversion efficiency and stability. The polycrystalline silicon cell uses polycrystalline silicon material, and the thin film silicon cell uses thin film technology to make polycrystalline silicon material into thin sheets, which can achieve a lighter and more flexible design with relatively low cost.

[0036] In the above optional embodiments, the material of the tunneling composite layer can be any one or more of IZO and ITO, and the process for forming the tunneling composite layer can be any one or more of vacuum evaporation, physical vapor deposition and chemical vapor deposition. Those skilled in the art can reasonably select the preparation process and material of the above-mentioned tunneling composite layer according to actual conditions, and this application does not make specific limitations.

[0037] After the step of providing a substrate is completed, Figure 3 As shown, step S2 is performed: a hole transport layer 30 is formed on the side of the tunneling composite layer 20 away from the substrate 10, and the material of the hole transport layer 30 is doped with at least one metal element, and the metal element is group I and / or group II.

[0038] Specifically, a hole transport layer 30 is formed on the side of the tunneling composite layer 20 away from the substrate 10, wherein the hole transport layer 30 is doped with metal elements of Group I or Group II, or Group I and Group II. The above metal elements are low in price in the actual manufacture of perovskite cells, which can improve the hole extraction of the hole transport layer, reduce charge recombination, and improve the stability of the perovskite cell, while saving costs.

[0039] In some optional embodiments, the step of forming the above-mentioned hole transport layer includes: using a first organic metal compound, a second organic metal compound, a third organic metal compound and an organic solvent to mix to obtain a precursor solution of the above-mentioned hole transport layer, wherein the second organic metal compound contains a Group I metal element and the third organic metal compound contains a Group II metal element; thermally spraying the above-mentioned precursor solution on the side surface of the above-mentioned tunneling composite layer away from the above-mentioned substrate, and annealing the above-mentioned hole transport layer solution to obtain the above-mentioned hole transport layer.

[0040] In the above optional embodiment, a precursor solution of the hole transport layer is first prepared, and the first organometallic compound, the second organometallic compound and the third organometallic compound are fully mixed with an organic solvent to obtain the precursor solution of the above hole transport layer. The above precursor solution is evenly sprayed on the side surface of the tunneling composite layer away from the above substrate by thermal spraying, and then the precursor solution sprayed on the tunneling composite layer is annealed to allow the precursor solution to crystallize to obtain the hole transport layer.

[0041] After the step of forming a hole transport layer on the side of the tunneling composite layer away from the substrate, Figure 4 As shown, step S3 is performed: a perovskite film 40 is formed on a side of the hole transport layer 30 away from the tunneling composite layer 20 .

[0042] Specifically, a perovskite film 40 is formed on the surface of the hole transport layer 30 doped with group I and / or group II, which is away from the tunneling composite layer 20. The perovskite precursor solution can be evenly coated on one side of the hole transport layer 30 by spin coating, and then annealed and crystallized to form the perovskite film 40. The material of the perovskite film 40 can be one or more of potassium iodide, lead iodide and iodoformamidine, which is not specifically limited in this application. Figure 4 The tunneling composite layer 20 and the substrate 10 in Figure 3 The description is consistent with that in , and no specific limitation is made here.

[0043] Through the technical solution of the present application, a method for preparing a perovskite cell is provided, in which at least one metal element of Group I and / or Group II is doped into the material of the hole transport layer, which can effectively improve the conductivity, hole mobility and work function of the hole transport layer without losing the optical properties of the perovskite cell, thereby improving the hole extraction of the hole transport layer, reducing charge recombination, and improving the stability of the perovskite cell.

[0044] In some optional embodiments, the first organometallic compound includes nickel acetylacetonate, the second organometallic compound includes lithium acetate, and the third organometallic compound includes barium acetate.

[0045] In the above optional embodiment, the second organometallic compound and the third organometallic compound contain Group I and Group II metal elements respectively. The metal elements in the second organometallic compound and the third organometallic compound will chemically react with the nickel element in the first organometallic compound to obtain new chemical substances containing the above metal elements. The new chemical substances will effectively improve the conductivity, hole mobility and work function of the hole transport layer, thereby improving the hole extraction of the hole transport layer, reducing charge recombination, and improving the stability of the perovskite battery.

[0046] In some optional embodiments, the temperature of the thermal spraying is 350°C to 450°C.

[0047] In the above optional embodiment, the temperature of thermal spraying for preparing the hole transport layer is 350°C to 450°C. When the temperature is within the above range, the particles of the sprayed precursor solution of the hole transport layer can be finer and fall more evenly on the surface of the tunneling composite layer, thereby obtaining a hole transport layer with uniform texture.

[0048] In some optional embodiments, the temperature of the annealing treatment is 350° C. to 450° C., and the time of the annealing treatment is 40 min to 100 min.

[0049] In the above optional implementation manner, after the precursor solution of the hole transport layer is sprayed onto the surface of the tunneling composite layer, the precursor solution is annealed to crystallize the precursor solution to obtain the hole transport layer.

[0050] In some optional embodiments, the molar ratio of the first organometallic compound to the second organometallic compound is (18:1) to (20:1); the molar ratio of the first organometallic compound to the third organometallic compound is (3:1) to (5:1); the molar ratio of the second organometallic compound to the third organometallic compound is (1:5) to (1:4).

[0051] It should be noted that the molar ratio of the first organometallic compound to the second organometallic compound satisfies any point value from (18:1) to (20:1), for example, the molar ratio of the first organometallic compound to the second organometallic compound may be (19:1); the molar ratio of the first organometallic compound to the third organometallic compound satisfies any point value from (3:1) to (5:1), for example, the molar ratio of the first organometallic compound to the third organometallic compound may be (4:1); the molar ratio of the second organometallic compound to the third organometallic compound satisfies any point value from (1:5) to (1:4), for example, the molar ratio of the second organometallic compound to the third organometallic compound may be (1:4.5).

[0052] In the above optional embodiment, the first organic metal compound contains nickel element, which is the main material for preparing the hole transport layer, the second organic metal compound contains lithium element, and the third organic metal compound contains barium element, wherein, when only the second organic metal compound is doped into the first organic metal compound, the quantitative ratio between the nickel element and the lithium element is preferably 20:1; when only the third organic metal compound is doped into the first organic metal compound, the quantitative ratio between the nickel element and the barium element is preferably 5:1; when the second organic metal compound and the third organic metal compound are doped into the first organic metal compound, the quantitative ratio between the nickel element, the lithium element and the barium element is preferably 20:1:4.

[0053] By controlling the quantity ratio of the nickel element, the lithium element and the barium element within the above range, the crystal quality of the precursor solution of the prepared hole transport layer can be improved, and a more uniform hole transport layer can be obtained.

[0054] In some optional embodiments, the hole transport layer has a thickness of 20 nm to 40 nm.

[0055] In the above optional embodiment, the precursor solution of the above hole transport layer is thermally sprayed on the tunneling composite layer at a temperature of 350°C to 450°C, and then annealed at an annealing temperature of 350°C to 450°C to obtain a hole transport layer with a thickness of 20nm to 40nm. The hole transport layer within the above range can have better conductivity and hole mobility, and can make the perovskite battery more stable.

[0056] In some optional embodiments, the concentration of the precursor solution is 20 mol / mL to 60 mol / mL.

[0057] In the above optional embodiment, the concentration of the precursor solution obtained by doping the above-mentioned second organometallic compound, the above-mentioned third organometallic compound and an organic solvent into the above-mentioned first organometallic compound is controlled at 20 mol / mL to 60 mol / mL, so that the nickel element, lithium element and barium element can fully react in the above-mentioned precursor solution to obtain a high-quality precursor solution.

[0058] After the step of forming the above-mentioned perovskite film, as Figure 5 As shown, the preparation method in the embodiment of the present application may further include: stacking an electron transport layer 50, a buffer layer 60, a transparent conductive layer 70 and an electrode layer 80 in sequence on the surface of the perovskite film 40 facing away from the hole transport layer 30.

[0059] In the above optional implementation, if Figure 5 As shown, an electron transport layer 50, a buffer layer 60, a transparent conductive layer 70 and an electrode layer 80 are sequentially deposited on one surface of the perovskite film 40, wherein the deposition process may be a physical vapor deposition process and a chemical vapor deposition process, which is not specifically limited in the present application. Figure 5 The tunneling composite layer 20 and the substrate 10 are Figure 3 The description is consistent with that in , and will not be repeated here.

[0060] In the above optional embodiment, the material of the electron transport layer can be SnO 2 , ZnO, TiO 2 , PCBM and C60, the buffer layer material can be SnO 2 and Al 2 O 3 The material of the transparent conductive layer may be any one or more of ITO and IZO, and the material of the electrode layer may be any one or more of Au, Ag, Cu and Al. Those skilled in the art may reasonably select the material types of the electron transport layer, buffer layer, transparent conductive layer and electrode layer according to actual conditions, and this application does not make specific limitations.

[0061] In the above optional embodiment, the buffer layer can make the energy of the electron transport path in the perovskite battery more matched, accelerate the electron extraction and transmission of the perovskite battery, passivate the defects of the electron transport layer interface, reduce the interface recombination current, and protect the perovskite film to improve the stability of the perovskite battery.

[0062] According to another embodiment of the present application, Figure 5 As shown, a perovskite battery 90 is also provided, which is prepared by the above-mentioned preparation method of the perovskite battery 90.

[0063] The perovskite cell prepared by the preparation method of the perovskite cell of the present application forms a perovskite film on the side of the hole transport layer away from the tunneling composite layer; by doping the group I and / or group II metal elements in the hole transport layer, the conductivity, hole mobility and work function of the hole transport layer can be effectively improved without losing the optical properties of the perovskite cell, thereby improving the hole extraction of the hole transport layer, reducing charge recombination, and improving the stability of the perovskite cell.

[0064] The preparation method of the above-mentioned perovskite battery and the perovskite battery of the present application will be specifically described below in combination with specific embodiments and comparative examples.

[0065] Example 1

[0066] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0067] 1. Provide a substrate, on which there is a tunneling composite layer, the substrate is a conductive substrate or a bottom cell, wherein the substrate is a crystalline silicon bottom cell, and the material of the tunneling composite layer is IZO with a thickness of 50 nm;

[0068] 2. Forming a hole transport layer on the side of the tunneling composite layer away from the substrate, wherein the material of the hole transport layer is doped with at least one metal element, wherein the material of the hole transport layer is NiO x (obtained by reaction of nickel acetylacetonate, lithium acetate and acetonitrile solution), thickness 30nm, the above metal element is lithium;

[0069] 3. Forming a perovskite film on the side of the hole transport layer away from the tunneling composite layer, wherein the material of the perovskite film is lead iodide and has a thickness of 50 nm;

[0070] 4. An electron transport layer, a buffer layer, a transparent conductive layer and an electrode layer are sequentially formed on the side of the perovskite film away from the hole transport layer, wherein the material of the electron transport layer is ZnO with a thickness of 50 nm, and the material of the buffer layer is SnO 2 , with a thickness of 50nm, the material of the transparent conductive layer is ITO, with a thickness of 60nm, and the material of the electrode layer is Ag, with a thickness of 60nm.

[0071] Example 2

[0072] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0073] 1. Provide a substrate, on which there is a tunneling composite layer, the substrate is a conductive substrate or a bottom cell, wherein the substrate is a crystalline silicon bottom cell, and the material of the tunneling composite layer is IZO with a thickness of 50 nm;

[0074] 2. Forming a hole transport layer on the side of the tunneling composite layer away from the substrate, wherein the material of the hole transport layer is doped with at least one metal element, wherein the material of the hole transport layer is NiO x (obtained by reaction of nickel acetylacetonate, barium acetate and acetonitrile solution), thickness 30nm, the above metal element is barium;

[0075] 3. Forming a perovskite film on the side of the hole transport layer away from the tunneling composite layer, wherein the material of the perovskite film is lead iodide and has a thickness of 50 nm;

[0076] 4. An electron transport layer, a buffer layer, a transparent conductive layer and an electrode layer are sequentially formed on the side of the perovskite film away from the hole transport layer, wherein the material of the electron transport layer is ZnO with a thickness of 50 nm, and the material of the buffer layer is SnO 2 , with a thickness of 50nm, the material of the transparent conductive layer is ITO, with a thickness of 60nm, and the material of the electrode layer is Ag, with a thickness of 60nm.

[0077] Example 3

[0078] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0079] 1. Provide a substrate, on which there is a tunneling composite layer, the substrate is a conductive substrate or a bottom cell, wherein the substrate is a crystalline silicon bottom cell, and the material of the tunneling composite layer is IZO with a thickness of 50 nm;

[0080] 2. Forming a hole transport layer on the side of the tunneling composite layer away from the substrate, wherein the material of the hole transport layer is doped with at least one metal element, wherein the material of the hole transport layer is NiO x (obtained by reaction of nickel acetylacetonate, lithium acetate, barium acetate and acetonitrile solution), thickness 30nm, the above metal elements are barium and lithium;

[0081] 3. Forming a perovskite film on the side of the hole transport layer away from the tunneling composite layer, wherein the material of the perovskite film is lead iodide and has a thickness of 50 nm;

[0082] 4. An electron transport layer, a buffer layer, a transparent conductive layer and an electrode layer are sequentially formed on the side of the perovskite film away from the hole transport layer, wherein the material of the electron transport layer is ZnO with a thickness of 50 nm, and the material of the buffer layer is SnO 2 , with a thickness of 50nm, the material of the transparent conductive layer is ITO, with a thickness of 60nm, and the material of the electrode layer is Ag, with a thickness of 60nm.

[0083] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0084] The preparation method of the above-mentioned perovskite battery of the embodiment of the present application includes: providing a substrate, a tunneling composite layer is provided on the substrate, and the substrate is a conductive substrate or a bottom battery; forming a hole transport layer on the side of the tunneling composite layer away from the substrate, and the material of the hole transport layer is doped with at least one metal element, and the metal element is group I and / or group II; forming a perovskite film on the side of the hole transport layer away from the tunneling composite layer; by doping the group I and / or group II metal elements in the hole transport layer, the conductivity, hole mobility and work function of the hole transport layer can be effectively improved without losing the optical properties of the perovskite battery, thereby improving the hole extraction of the hole transport layer, reducing charge recombination, and improving the stability of the perovskite battery.

[0085] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0086] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A method for preparing a perovskite battery, characterized in that: The following steps are involved: Providing a substrate, on which a tunneling composite layer is disposed, wherein the substrate is a conductive substrate or a bottom battery; A hole transport layer is formed on a side of the tunneling composite layer away from the substrate, wherein the material of the hole transport layer is doped with at least one metal element, and the metal element is a Group I metal element and / or a Group II metal element; A perovskite film is formed on a side of the hole transport layer away from the tunneling composite layer.

2. The method for preparing a perovskite battery according to claim 1, characterized in that: The step of forming the hole transport layer comprises: Mixing a first organic metal compound, a second organic metal compound, a third organic metal compound and an organic solvent to obtain a precursor solution of the hole transport layer, wherein the second organic metal compound contains the Group I metal element, and the third organic metal compound contains the Group II metal element; The precursor solution is thermally sprayed on a surface of the tunneling composite layer that is away from the substrate, and the hole transport layer solution is annealed to obtain the hole transport layer.

3. The method for preparing a perovskite battery according to claim 2, characterized in that: The first organometallic compound includes nickel acetylacetonate, the second organometallic compound includes lithium acetate, and the third organometallic compound includes barium acetate.

4. The method for preparing a perovskite battery according to claim 2, characterized in that: The temperature of the thermal spraying is 350°C to 450°C.

5. The method for preparing a perovskite battery according to claim 2, characterized in that: The temperature of the annealing treatment is 350° C. to 450° C., and the time of the annealing treatment is 40 min to 100 min.

6. The method for preparing a perovskite battery according to claim 2, characterized in that: The molar ratio of the first organometallic compound to the second organometallic compound is (18:1) to (20:1), the molar ratio of the first organometallic compound to the third organometallic compound is (3:1) to (5:1), and the molar ratio of the second organometallic compound to the third organometallic compound is (1:5) to (1:4).

7. The method for preparing a perovskite battery according to any one of claims 1 to 6, characterized in that: The thickness of the hole transport layer is 20 nm to 40 nm.

8. The method for preparing a perovskite battery according to claim 2, characterized in that: The concentration of the precursor solution is 20 mol / mL to 60 mol / mL.

9. The method for preparing a perovskite battery according to any one of claims 1 to 6, characterized in that: The preparation method further comprises: An electron transport layer, a buffer layer, a transparent conductive layer and an electrode layer are sequentially stacked on a surface of the perovskite film on a side away from the hole transport layer.

10. A perovskite battery, characterized in that: The perovskite battery is prepared by the preparation method of any one of claims 1 to 9.

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