Technology for realizing highly ordered two-dimensional molecular spin quantum bit array on surface through molecular assembly and two-dimensional molecular spin quantum bit array

Abstract

The invention discloses a technology for realizing a highly-ordered two-dimensional molecular spinning quantum bit array on a surface through molecular assembly and the two-dimensional molecular spinning quantum bit array, relates to the technical field of quantum information, and discloses the technology for realizing the highly-ordered two-dimensional molecular spinning quantum bit array on the surface through molecular assembly. Comprising the following steps: providing halogenated organic spinning molecules; taking halogenated organic spinning molecules as a molecular source, and depositing a halogen layer on the metal substrate; and taking halogenated organic spinning molecules as a molecular source, depositing a halogenated organic spinning molecular layer on the halogen layer, and carrying out heating annealing treatment to obtain the two-dimensional molecular spinning quantum bit array. According to the invention, the orderliness of the two-dimensional molecular spin quantum bit array is improved.

Description

Technical Field

[0001] The present application relates to the field of quantum information technology, and in particular to a technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface through molecular assembly, and a two-dimensional molecular spin quantum bit array. Background Art

[0002] As a frontier research field in quantum information technology, single-molecule spin bits have attracted extensive attention due to their unique magnetic properties and potential applications in quantum information storage, spin electronics, molecular-based magnetic devices, and quantum computing. At present, the existence of two-dimensional molecular spin bits has been confirmed by deposition on substrates or surface synthesis through chemical synthesis, physical deposition, molecular self-assembly, and other methods. These technologies make it possible to realize highly ordered spin arrays, which are expected to become the ideal choice for the next generation of molecular-based quantum devices, not only improving device performance, but also revealing new physical phenomena and expanding application prospects.

[0003] However, although conventional technology can construct ordered molecular arrays on the surface, it is still insufficient in regulating the molecular arrangement to achieve highly ordered two-dimensional molecular spin arrays, resulting in poor orderliness of the prepared molecular arrays, which has become a key issue restricting the development of molecular-based quantum devices.

[0004] The above contents are only used to assist in understanding the technical solution of the present application and do not constitute an admission that the above contents are prior art. Summary of the invention

[0005] The main purpose of this application is to provide a technology and a two-dimensional molecular spin qubit array for realizing a highly ordered two-dimensional molecular spin qubit array on a surface through molecular assembly, aiming to improve the orderliness of the two-dimensional molecular spin qubit array.

[0006] To achieve the above objectives, the present invention provides a technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly, comprising the following steps:

[0007] Providing halogenated organic spin molecules;

[0008] Using the halogenated organic spin molecules as molecular sources, a halogen layer is deposited on a metal substrate;

[0009] The halogenated organic spin molecules are used as molecular sources, a halogenated organic spin molecule layer is deposited on the halogen layer, and a heating annealing treatment is performed to obtain a two-dimensional molecular spin quantum bit array.

[0010] In one embodiment, the halogenated organic spin molecules include: 3-bromotrityl free radical molecules.

[0011] In one embodiment, the material of the metal substrate includes at least one of gold, silver, copper and platinum.

[0012] In one embodiment, the deposition method of the halogen layer and / or the halogenated organic spin molecular layer comprises: a thermal deposition method.

[0013] In one embodiment, when depositing the halogen layer, the temperature of the metal substrate is 20-100° C., the deposition temperature is 50-100° C., and the deposition time is 0.5-220 mins.

[0014] In one embodiment, when depositing the halogenated organic spin molecular layer, the temperature of the metal substrate is 20-30° C., the deposition temperature is 150-450° C., and the deposition time is 5-120 mins.

[0015] In one embodiment, the annealing temperature of the heating annealing treatment is 20-550° C., and the annealing time is 5-120 minutes.

[0016] In one embodiment, the vacuum degree during the deposition of the halogen layer and / or the halogenated organic spin molecular layer is less than 1×10 -9 mbar.

[0017] The embodiment of the present application also provides a two-dimensional molecular spin quantum bit array, and the two-dimensional molecular spin quantum bit array is prepared by the above method.

[0018] In one embodiment, the two-dimensional molecular spin quantum bit array includes at least one of a linear halogen bond, a triangular halogen bond, and a hexagonal halogen bond.

[0019] One or more technical solutions proposed in this application have at least the following technical effects: providing a technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on the surface through molecular assembly, by providing halogenated organic spin molecules, and using halogenated organic spin molecules as molecular sources, first depositing a halogen layer on a metal substrate; and then using halogenated organic spin molecules as molecular sources again, depositing a halogenated organic spin molecule layer on the halogen layer, and performing heating annealing treatment to obtain a two-dimensional molecular spin quantum bit array. The embodiment of the present application forms a weak physical adsorption on the second deposited halogenated organic spin molecule layer by the halogen layer deposited on the metal substrate, thereby promoting the formation of a halogenated organic spin molecule layer on the metal substrate. Furthermore, due to the unique directionality and strength of the halogen bond, the halogen atoms can form a stable connection with the halogen atoms in the adjacent molecules, thereby promoting the orderly arrangement of molecules on the substrate surface. And then under the joint action of the directionality and strength of the halogen bond, the docking between molecules is more orderly, which provides a basis for constructing a highly ordered two-dimensional molecular structure. In addition, the diversity of halogen bonds provides a broad space for regulating the interaction between molecules. By changing the type and amount of halogen atoms during the deposition process and precisely controlling the temperature of the annealing treatment, the interactions between molecules can be optimized, thereby regulating the order of the molecular array. This ability to fine-tune allows us to achieve highly ordered two-dimensional molecular spin qubit arrays, providing new possibilities for the development of quantum computing and spin electronics. Furthermore, by controlling the deposition parameters, it is possible to ensure that the molecules are deposited on the substrate at an appropriate speed and in an appropriate manner, which helps to reduce the random motion between molecules and thus improve the order of the array. The annealing treatment further enhances the ordered arrangement between molecules. Through temperature control, the adsorption and arrangement of molecules on the substrate are more stable, reducing random collisions and rearrangements between molecules, and producing a highly ordered two-dimensional molecular spin qubit array. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A flow chart of a technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface through molecular assembly according to an embodiment of the present application;

[0021] Figure 2 This is a schematic diagram of the characterization results of the bromine monolayer in Example 1 of the present application;

[0022] Figure 3 This is a schematic diagram of the characterization results of Examples 1 to 4 of the present application;

[0023] Figure 4 Schematic diagram of halogen bonds in a two-dimensional molecular spin quantum bit array prepared in an embodiment of the present application.

[0024] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be described clearly and completely below. If the specific conditions are not specified in the embodiments, they are carried out according to the conventional conditions or the conditions recommended by the manufacturer. If the manufacturer is not specified for the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0026] Below, the two-dimensional molecular spin quantum bit array and the implementation method of the preparation method thereof of the present application are specifically disclosed in detail with appropriate reference to the accompanying drawings. However, there may be cases where unnecessary detailed descriptions are omitted. For example, there are cases where detailed descriptions of well-known matters and repeated descriptions of actually the same structure are omitted. This is to avoid the following description from becoming unnecessarily lengthy and to facilitate the understanding of those skilled in the art. In addition, the drawings and the following descriptions are provided for those skilled in the art to fully understand the present application and are not intended to limit the subject matter described in the claims.

[0027] The "range" disclosed in the present application is defined in the form of a lower limit and an upper limit, and a given range is defined by selecting a lower limit and an upper limit, and the selected lower limit and upper limit define the boundaries of the particular range. The range defined in this way can be inclusive or exclusive of the end values, and can be arbitrarily combined, that is, any lower limit can be combined with any upper limit to form a range. For example, if a range of 60 to 120 and 80 to 110 is listed for a particular parameter, it is understood that a range of 60 to 110 and 80 to 120 is also expected. In addition, if the minimum range values ​​1 and 2 are listed, and if the maximum range values ​​3, 4 and 5 are listed, the following ranges can all be expected: 1 to 3, 1 to 4, 1 to 5, 2 to 3, 2 to 4 and 2 to 5. In the present application, unless otherwise specified, the numerical range "a to b" represents an abbreviation of any real number combination between a and b, where a and b are both real numbers. For example, the numerical range "0-5" means that all real numbers between "0-5" are listed in this document, and "0-5" is just an abbreviation of these numerical combinations. In addition, when a parameter is expressed as an integer ≥ 2, it is equivalent to disclosing that the parameter is, for example, an integer of 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0028] If not otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0029] Unless otherwise specified, all technical features and optional technical features of this application can be combined with each other to form a new technical solution.

[0030] If there is no special explanation, all steps of the present application can be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order. For example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0031] If there is no special explanation, the "include" and "comprising" mentioned in this application are open-ended or closed-ended. For example, the "include" and "comprising" may mean that other components not listed may also be included or only the listed components may be included or only the listed components may be included.

[0032] If not specifically stated, in this application, the term "or" is inclusive. For example, the phrase "A or B" means "A, B, or both A and B". More specifically, any of the following conditions satisfies the condition "A or B": A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0033] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and understandable, the technical solution of the present application is further described below in conjunction with the accompanying drawings and embodiments. However, the present application is not limited to the listed embodiments, and should also include any other known changes within the scope of the rights claimed in the present application.

[0034] The term "one embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of the present application. The term "in one embodiment" that appears in different places in this specification does not necessarily refer to the same embodiment, nor does it refer to a separate or selective embodiment that is mutually exclusive with other embodiments.

[0035] In order to better understand the technical solution of the present application, a detailed description will be given below in conjunction with the accompanying drawings and specific implementation methods.

[0036] Although conventional two-dimensional molecular spin quantum bit array preparation technology can construct ordered molecular arrays on the surface, it is still insufficient in regulating the molecular arrangement to achieve highly ordered two-dimensional molecular spin arrays, resulting in poor orderliness of the prepared molecular arrays. This has become a key issue restricting the development of molecular-based quantum devices.

[0037] The present application provides a solution, specifically, a technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on the surface by molecular assembly, through the halogen layer deposited on the metal substrate, the second deposition of the halogenated organic spin molecule layer forms a weak physical adsorption, and promotes the formation of the halogenated organic spin molecule layer on the metal substrate. Further, due to the unique directionality and strength of the halogen bond, the halogen atoms can form a stable connection with the halogen atoms in the adjacent molecules, thereby promoting the orderly arrangement of molecules on the substrate surface. And then under the joint action of the directionality and strength of the halogen bond, the docking between molecules is made more orderly, providing a basis for building a highly ordered two-dimensional molecular structure. In addition, the diversity of halogen bonds provides a broad space for regulating the interaction between molecules. By changing the type and quantity of halogen atoms during the deposition process, and accurately controlling the temperature of the annealing treatment, the interaction between molecules can be optimized, and then the orderliness of the molecular array can be regulated. This fine control ability enables us to achieve a highly ordered two-dimensional molecular spin quantum bit array, providing new possibilities for the development of quantum computing and spin electronics. Furthermore, by controlling the deposition parameters, it is possible to ensure that the molecules are deposited on the substrate at an appropriate speed and in an appropriate manner, which helps to reduce the random motion between molecules and thus improve the order of the array. The annealing treatment further enhances the orderly arrangement between molecules. By controlling the temperature, the adsorption and arrangement of molecules on the substrate are more stable, which reduces the random collision and rearrangement between molecules, and produces a highly ordered two-dimensional molecular spin quantum bit array.

[0038] Reference Figure 1 In a first aspect, an embodiment of the present application provides a technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly, comprising the following steps:

[0039] Step S10, providing a halogenated organic spin molecule;

[0040] In one possible embodiment, a halogenated organic spin molecule for preparing a two-dimensional molecular spin qubit array is provided, wherein the halogenated organic spin molecule is a molecule having halogen bond diversity and one more electron spin.

[0041] Exemplarily, the synthesis is based on a solution-based organic synthesis method, and the halogenated organic spin molecules are pre-synthesized.

[0042] In one feasible embodiment, the halogenated organic spin molecule includes: 3-bromotrityl radical molecule 3Br-PTM.

[0043] Halogen bonds have unique directionality and strength, so halogen atoms can form stable connections with halogen atoms in adjacent molecules, thereby promoting the orderly arrangement of molecules on the substrate surface. Under the combined effect of the directionality and strength of halogen bonds, the docking between molecules is more orderly, providing a basis for the construction of highly ordered two-dimensional molecular structures. In addition, the diversity of halogen bonds provides a broad space for regulating the interactions between molecules. By changing the type and number of halogen atoms during the deposition process and precisely controlling the temperature of the annealing treatment, the interactions between molecules can be optimized, thereby regulating the orderliness of the molecular array. This ability to finely control enables us to achieve highly ordered two-dimensional molecular spin qubit arrays, providing new possibilities for the development of quantum computing and spin electronics. Highly ordered two-dimensional molecular spin qubit arrays can reduce interference between qubits, thereby providing more consistent and predictable magnetic properties, and promoting the innovative development of new molecular-based quantum devices and storage devices.

[0044] Step S20, using halogenated organic spin molecules as molecular sources to deposit a halogen layer on a metal substrate;

[0045] In a feasible embodiment, a halogenated organic spin molecule is used as a molecular source to deposit a halogen layer on a metal substrate by thermal deposition. The halogenated organic spin molecule layer deposited for the second time is weakly physically adsorbed by the halogenated organic spin molecule layer, thereby promoting the formation of the halogenated organic spin molecule layer on the metal substrate.

[0046] Exemplarily, the halogenated organic spin molecule is a 3-bromotrityl radical molecule, and an insulating bromine monolayer is deposited on a metal substrate by thermal deposition.

[0047] In one feasible embodiment, when the halogen layer is deposited, the temperature of the metal substrate is 20-100° C., for example, 20° C., 25° C., 30° C., 35° C., 40° C., 45° C., 50° C., 55° C., 60° C., 65° C., 70° C., 75° C., 80° C., 85° C., 90° C., 95° C., 100° C., etc. At this temperature, the deposition of halogen atoms can be promoted.

[0048] In one feasible implementation, when depositing the halogen layer, the deposition temperature is 50-100° C., for example, 50° C., 54° C., 55° C., 58° C., 60° C., 64° C., 65° C., 68° C., 70° C., 74° C., 75° C., 78° C., 80° C., 84° C., 85° C., 88° C., 90° C., 94° C., 95° C., 98° C., 100° C., etc. Since the evaporation temperature of the halogen element is relatively low, the deposition of the halogen layer on the metal substrate is achieved by controlling the relatively low deposition temperature.

[0049] In one feasible embodiment, when depositing the halogen layer, the deposition time is 0.5 to 220 minutes, for example, 0.5 minutes, 1 minute, 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 60 minutes, 70 minutes, 80 minutes, 90 minutes, 100 minutes, 110 minutes, 120 minutes, 130 minutes, 140 minutes, 150 minutes, 160 minutes, 170 minutes, 180 minutes, 190 minutes, 200 minutes, 210 minutes, 220 minutes, etc. Under this time, a single layer of molecules or a few layers of molecules can be covered.

[0050] In one embodiment, when the halogen layer is deposited, the vacuum degree is less than 1×10 -9 mbar to reduce surface contamination during deposition.

[0051] In one feasible implementation, the material of the metal substrate includes at least one of gold, silver, copper and platinum. The surfaces of the above materials have good flatness, and thus are suitable as substrate materials for two-dimensional molecular spin quantum bit arrays.

[0052] Exemplarily, the material of the metal substrate includes: gold (111) single crystal; the gold (111) surface has a high degree of crystallinity and flatness, as well as atomic arrangement and electronic structure characteristics, which can form specific interactions with molecules adsorbed on its surface, and the diffusion barrier of the molecules on the gold (111) surface is relatively low. The low diffusion barrier helps the molecules move on the substrate surface and find the most energy stable arrangement, thereby forming a highly ordered two-dimensional molecular spin array.

[0053] For example, the metal substrate may be subjected to argon ion bombardment and annealing treatment in advance.

[0054] Step S30, using halogenated organic spin molecules as molecular sources, depositing a halogenated organic spin molecule layer on the halogen layer, and performing heating annealing treatment to obtain a two-dimensional molecular spin quantum bit array.

[0055] In a feasible embodiment, halogenated organic spin molecules are used as molecular sources again, and a halogenated organic spin molecule layer is further deposited on the halogen layer by thermal deposition; the prepared sample is then subjected to heating annealing treatment to obtain a highly ordered two-dimensional molecular spin quantum bit array.

[0056] In one feasible embodiment, when depositing the halogenated organic spin molecule layer, the temperature of the metal substrate is 20-30° C., for example, 20° C., 21° C., 22° C., 23° C., 24° C., 25° C., 26° C., 27° C., 28° C., 29° C., 30° C., etc. At this temperature, the deposition of the halogenated organic spin molecules can be promoted.

[0057] In a feasible embodiment, when depositing the halogenated organic spin molecule layer, the deposition temperature is 150-450°C; for example, 150°C, 160°C, 170°C, 180°C, 190°C, 200°C, 210°C, 220°C, 230°C, 240°C, 250°C, 260°C, 270°C, 280°C, 290°C, 300°C, 310°C, 320°C, 330°C, 340°C, 350°C, 360°C, 370°C, 380°C, 390°C, 400°C, 410°C, 420°C, 430°C, 440°C, 450°C, etc. By controlling the relatively high deposition temperature, the evaporation of the halogenated organic spin molecule is achieved, and the halogenated organic spin molecule layer is successfully deposited on the metal substrate.

[0058] In one feasible embodiment, when depositing the halogenated organic spin molecular layer, the deposition time is 5 to 120 minutes; for example, 5 minutes, 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 60 minutes, 70 minutes, 80 minutes, 90 minutes, 100 minutes, 110 minutes, 120 minutes, etc.

[0059] In one embodiment, when depositing the halogenated organic spin molecular layer, the vacuum degree is less than 1×10 -9 mbar to reduce surface contamination during deposition.

[0060] In one feasible embodiment, the annealing temperature of the heat annealing treatment is 20-550° C., for example, 20° C., 50° C., 100° C., 150° C., 200° C., 250° C., 300° C., 350° C., 400° C., 450° C., 500° C., 550° C., etc. At this temperature, a variety of highly ordered two-dimensional molecular spin arrays are formed on the surface by utilizing the diversity of halogen bonds.

[0061] For example, by controlling different annealing temperatures, five highly ordered two-dimensional molecular spin quantum bit arrays can be produced.

[0062] In a feasible implementation manner, the annealing time of the heating annealing treatment is 5 to 120 minutes; for example, 5 minutes, 10 minutes, 20 minutes, 30 minutes, 40 minutes, 50 minutes, 60 minutes, 70 minutes, 80 minutes, 90 minutes, 100 minutes, 110 minutes, 120 minutes, etc.

[0063] In one feasible embodiment, the prepared two-dimensional molecular spin quantum bit array includes at least one of a linear halogen bond, a triangular halogen bond, and a hexagonal halogen bond.

[0064] Exemplarily, the two-dimensional molecular spin quantum bit arrays formed at different annealing temperatures are all composed of a variety of halogen bonds, including: linear halogen bonds, triangular halogen bonds and hexagonal halogen bonds, and other non-covalent bonds include: hydrogen bonds, metal coordination bonds and van der Waals forces; ordered molecular quantum bit arrays can also be obtained through covalent bonds.

[0065] Exemplarily, when the halogenated organic spin molecules are selected from 3-bromotrityl radical molecules, the two-dimensional molecular spin quantum bit array includes: linear Br bonds, triangular Br bonds and hexagonal Br bonds.

[0066] In this embodiment, by the halogen layer deposited on the metal substrate, the halogenated organic spin molecule layer deposited for the second time is weakly physically adsorbed, and the formation of the halogenated organic spin molecule layer on the metal substrate is promoted. Further, due to the unique directionality and strength of the halogen bond, the halogen atoms can form a stable connection with the halogen atoms in the adjacent molecules, thereby promoting the orderly arrangement of molecules on the substrate surface. Then, under the joint action of the directionality and strength of the halogen bond, the docking between molecules is made more orderly, which provides a basis for building a highly ordered two-dimensional molecular structure. In addition, the diversity of halogen bonds provides a broad space for regulating the interaction between molecules. By changing the type and quantity of halogen atoms during the deposition process, and accurately controlling the temperature of the annealing treatment, the interaction between molecules can be optimized, and then the orderliness of the molecular array can be regulated. This fine control ability enables us to realize a highly ordered two-dimensional molecular spin quantum bit array, which provides new possibilities for the development of quantum computing and spin electronics. Further, by controlling the deposition parameters, it can be ensured that the molecules are deposited on the substrate at an appropriate speed and manner, which helps to reduce the random motion between molecules, thereby improving the orderliness of the array. The annealing treatment further enhances the ordered arrangement between molecules. Through temperature control, the adsorption and arrangement of molecules on the substrate are more stable, which reduces the random collision and rearrangement between molecules and produces a highly ordered two-dimensional molecular spin quantum bit array.

[0067] In order to enable the details and operations of the above embodiments of the present application to be clearly understood by those skilled in the art, and to significantly demonstrate the improved performance of the embodiments of the present application, the above technical solutions are illustrated by means of multiple embodiments below.

[0068] Example 1

[0069] (1) providing 3-bromotrityl free radical molecules and a clean gold substrate;

[0070] (2) Using 3-bromotrityl free radical molecules as molecular sources, a bromine monolayer was deposited on a gold substrate, wherein the substrate temperature was 30°C, the deposition temperature was 80°C, the deposition time was 5 mins, and the vacuum degree was less than 1×10 -9 mbar; the samples were characterized by in-situ imaging using a low-temperature high-resolution scanning tunneling microscope (LT-STM). Figure 2 , it can be seen that a bromine monolayer is formed on the surface of the gold substrate;

[0071] (3) Continue heating the 3-bromotrityl free radical molecule to deposit a 3-bromotrityl free radical molecule layer on the bromine monolayer, wherein the substrate temperature is 30°C, the deposition temperature is 220°C, the deposition time is 5 mins, and the vacuum degree is less than 1×10 -9 mbar;

[0072] (4) The sample is subjected to heating annealing treatment, wherein the annealing temperature is 250° C. and the annealing time is 5 mins, to obtain a two-dimensional molecular spin quantum bit array.

[0073] Example 2

[0074] The experimental steps are the same as those in Example 1, except that:

[0075] The annealing temperature in step (4) is 200°C.

[0076] Example 3

[0077] The experimental steps are the same as those in Example 1, except that:

[0078] The annealing temperature in step (4) is 100°C.

[0079] Example 4

[0080] The experimental steps are the same as those in Example 1, except that:

[0081] The annealing temperature in step (4) is 20°C.

[0082] In situ imaging characterization of Examples 1 to 4 was performed by LT-STM, and it was found that a variety of different two-dimensional molecular spin quantum bit arrays (i.e., spin arrays) were formed at each annealing temperature, wherein the types of spin arrays that appeared refer to Figure 3 ; Spin array 1 is mainly a spin bit array of triangular Br bonds, with high energy of bromine bond interaction, the most stable structure and the highest yield. Spin array 2 is mainly a spin bit array of hexagonal Br bonds, mainly bromine bond interaction energy and van der Waals force, with the highest interaction energy, the highest molecular density and a relatively stable structure. Spin array 3 is mainly a spin bit array of linear Br bonds, with the smallest energy of bromine bond interaction, the most unstable structure and the lowest yield. Spin array 4 is mainly a combination of spin bit arrays of triangular Br bonds and linear Br bonds, with moderate intermolecular interaction energy. Spin array 5 is mainly a spin bit array of a combination of spin bit arrays of triangular Br bonds and linear Br bonds, but the unit cell is very large, and the interaction energy is similar to that of spin array 4. The proportions of each spin array generated in Examples 1 to 4 are shown in Table 1 below, where "√" represents the appearance of this type of spin array, and " / " represents the absence of this type of spin array.

[0083]

[0084]

[0085] Furthermore, the halogen bond forms included in the two-dimensional molecular spin quantum bit arrays in Examples 1 to 4 were determined by LT-STM imaging and density functional theory (DFT) calculations. Figure 4 As shown; it can be seen that the two-dimensional molecular spin quantum bit arrays of Examples 1 to 4 all form linear Br bonds, triangular Br bonds and hexagonal Br bonds.

[0086] In summary, the embodiments of the present application not only simplify the preparation process of the two-dimensional molecular spin quantum bit array, but also improve the orderliness of the two-dimensional molecular spin quantum bit array, and further promote the practical application of molecular-based quantum devices.

[0087] The above are only preferred embodiments of the present application, and do not limit the scope of the present application. For those skilled in the art, the present application may have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the scope of patent protection of the present application.

Claims

1. A technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly, characterized in that: The technique comprises the following steps: Providing halogenated organic spin molecules; Using the halogenated organic spin molecules as molecular sources, a halogen layer is deposited on a metal substrate; The halogenated organic spin molecules are used as molecular sources, a halogenated organic spin molecule layer is deposited on the halogen layer, and a heating annealing treatment is performed to obtain a two-dimensional molecular spin quantum bit array.

2. The technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly as claimed in claim 1, characterized in that: The halogenated organic spin molecules include: 3-bromotrityl free radical molecules.

3. The technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly as claimed in claim 1, characterized in that: The material of the metal substrate includes at least one of gold, silver, copper and platinum.

4. The technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly as claimed in claim 1, characterized in that: The deposition method of the halogen layer and / or the halogenated organic spin molecular layer comprises: a thermal deposition method.

5. The technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly as claimed in claim 1, characterized in that: When depositing the halogen layer, the temperature of the metal substrate is 20-100° C., the deposition temperature is 50-100° C., and the deposition time is 0.5-220 mins.

6. The technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly as claimed in claim 1, characterized in that: When depositing the halogenated organic spin molecular layer, the temperature of the metal substrate is 20-30° C., the deposition temperature is 150-450° C., and the deposition time is 5-120 minutes.

7. The technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly as claimed in claim 1, characterized in that: The annealing temperature of the heating annealing treatment is 20-550° C., and the annealing time is 5-120 minutes.

8. The technology for realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly as claimed in claim 1, characterized in that: The vacuum degree during the deposition of the halogen layer and / or the halogenated organic spin molecular layer is less than 1×10 -9 mbar.

9. A two-dimensional molecular spin quantum bit array, characterized in that: The two-dimensional molecular spin quantum bit array is prepared by the technology of realizing a highly ordered two-dimensional molecular spin quantum bit array on a surface by molecular assembly as described in any one of claims 1 to 8.

10. The two-dimensional molecular spin quantum bit array according to claim 9, characterized in that: The two-dimensional molecular spin quantum bit array includes at least one of a linear halogen bond, a triangular halogen bond and a hexagonal halogen bond.

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