Techniques for achieving highly ordered two-dimensional arrays of molecular spin qubits on surfaces, two-dimensional arrays of molecular spin qubits

Abstract

The application discloses a technology for realizing a highly-ordered two-dimensional molecular spin quantum bit array through molecular assembly on a surface, a two-dimensional molecular spin quantum bit array, and relates to the technical field of quantum information. The application discloses a technology for realizing a highly-ordered two-dimensional molecular spin quantum bit array through molecular assembly on a surface, and comprises the following steps: providing a halogenated organic spin molecule; depositing a halogen layer on a metal substrate by taking the halogenated organic spin molecule as a molecular source; depositing a halogenated organic spin molecule layer on the halogen layer by taking the halogenated organic spin molecule as a molecular source, and performing a heating annealing treatment to obtain a two-dimensional molecular spin quantum bit array. The application improves the order of the two-dimensional molecular spin quantum bit array.

Description

Technical Field

[0001] This application relates to the field of quantum information technology, and in particular to the technology of realizing highly ordered two-dimensional molecular spin qubit arrays on a surface through molecular assembly, and two-dimensional molecular spin qubit arrays. Background Technology

[0002] Single-molecule spin qubits, as a cutting-edge research area in quantum information technology, have attracted widespread attention due to their unique magnetic properties and potential applications in quantum information storage, spintronics, molecular-based magnetic devices, and quantum computing. Currently, the existence of two-dimensional molecular spin qubits has been confirmed through deposition on substrates or surface synthesis via chemical synthesis, physical deposition, and molecular self-assembly. These techniques offer the possibility of realizing highly ordered spin arrays and are expected to become ideal choices for next-generation molecular-based quantum devices, not only improving device performance but also potentially revealing entirely new physical phenomena and expanding application prospects.

[0003] However, while conventional techniques can construct ordered molecular arrays on surfaces, they are still insufficient in controlling molecular arrangement to achieve highly ordered two-dimensional molecular spin arrays, resulting in poor orderliness of the prepared molecular arrays. This has become a key problem restricting the development of molecular-based quantum devices.

[0004] The above content is only used to help understand the technical solution of this application and does not represent an admission that the above content is prior art. Summary of the Invention

[0005] The main objective of this application is to provide a technique for achieving highly ordered two-dimensional molecular spin qubit arrays on a surface through molecular assembly, and to improve the orderliness of two-dimensional molecular spin qubit arrays.

[0006] To achieve the above objectives, embodiments of this application provide a technique for realizing a highly ordered two-dimensional molecular spin qubit array on a surface through molecular assembly, comprising the following steps:

[0007] Provides halogenated organic spin molecules;

[0008] Using the halogenated organic spin molecules as a molecular source, a halogen layer is deposited on a metal substrate;

[0009] Using the halogenated organic spin molecules as a molecular source, a layer of halogenated organic spin molecules is deposited on the halogen layer and subjected to heating annealing to obtain a two-dimensional molecular spin qubit array.

[0010] In one embodiment, the halogenated organic spin molecule includes a 3-bromotriphenylmethyl radical molecule.

[0011] In one embodiment, the material of the metal substrate includes at least one of gold, silver, copper, and platinum.

[0012] In one embodiment, the deposition method of the halogen layer and / or the halogenated organic spin molecular layer includes: thermal deposition.

[0013] In one embodiment, during the deposition of the halogen layer, the temperature of the metal substrate is 20–100°C, the deposition temperature is 50–100°C, and the deposition time is 0.5–220 mins.

[0014] In one embodiment, when depositing the haloorganic spin molecular layer, the temperature of the metal substrate is 20–30°C, the deposition temperature is 150–450°C, and the deposition time is 5–120 mins.

[0015] In one embodiment, the annealing temperature of the heating annealing treatment is 20–550°C, and the annealing time is 5–120 mins.

[0016] In one embodiment, the vacuum level during deposition of the halogen layer and / or the haloorganic spin molecular layer is less than 1 × 10⁻⁶. -9 mbar.

[0017] This application also provides a two-dimensional molecular spin qubit array, which is prepared by the method described above.

[0018] In one embodiment, the two-dimensional molecular spin qubit array includes at least one of linear halogen bonds, triangular halogen bonds, and hexagonal halogen bonds.

[0019] One or more technical solutions proposed in this application have at least the following technical effects: A technique for achieving a highly ordered two-dimensional molecular spin qubit array on a surface through molecular assembly is provided. This involves providing halogenated organic spin molecules as the molecular source, first depositing a halogen layer on a metal substrate; then, again using halogenated organic spin molecules as the molecular source, depositing a halogenated organic spin molecule layer on the halogen layer, and performing a heating annealing treatment to obtain a two-dimensional molecular spin qubit array. In the embodiments of this application, the halogen layer deposited on the metal substrate forms a weak physical adsorption on the second-deposited halogenated organic spin molecule layer, promoting the formation of the halogenated organic spin molecule layer on the metal substrate. Furthermore, due to the unique directionality and strength of halogen bonds, halogen atoms can form stable connections with halogen atoms in adjacent molecules, thereby promoting the ordered arrangement of molecules on the substrate surface. Furthermore, the combined effect of the directionality and strength of halogen bonds makes the inter-molecular docking more ordered, providing a foundation for constructing a highly ordered two-dimensional molecular structure. In addition, the diversity of halogen bonds provides a broad space for regulating intermolecular interactions. By altering the type and quantity of halogen atoms during deposition and precisely controlling the annealing temperature, intermolecular interactions can be optimized, thereby modulating the orderliness of the molecular array. This ability to precisely control the array enables the fabrication of highly ordered two-dimensional molecular spin qubit arrays, offering new possibilities for the development of quantum computing and spintronics. Furthermore, controlling deposition parameters ensures that molecules are deposited on the substrate at appropriate speeds and in appropriate ways, which helps reduce random molecular motion and thus improves the array's orderliness. Annealing further enhances the ordered arrangement of molecules; temperature control makes the adsorption and arrangement of molecules on the substrate more stable, reducing random collisions and rearrangements, resulting in highly ordered two-dimensional molecular spin qubit arrays. Attached Figure Description

[0020] Figure 1 This is a flowchart illustrating the technology for achieving highly ordered two-dimensional molecular spin qubit arrays on a surface through molecular assembly, as described in the embodiments of this application.

[0021] Figure 2 This is a schematic diagram of the characterization results of the bromine monolayer in Example 1 of this application;

[0022] Figure 3 These are schematic diagrams illustrating the characterization results of Examples 1 to 4 of this application;

[0023] Figure 4 This is a schematic diagram of halogen bonds in a two-dimensional molecular spin qubit array prepared according to an embodiment of this application.

[0024] The realization of the purpose, functional features and advantages of this application will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0025] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions in the embodiments of this application will be clearly and completely described below. Where specific conditions are not specified in the embodiments, conventional conditions or conditions recommended by the manufacturer shall apply. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased commercially.

[0026] The following detailed description, with appropriate reference to the accompanying drawings, discloses embodiments of the two-dimensional molecular spin qubit array and its fabrication method of this application. However, unnecessary detailed descriptions may be omitted. For example, detailed descriptions of well-known matters and repetitive descriptions of practically identical structures may be omitted. This is to avoid unnecessarily lengthy descriptions and to facilitate understanding by those skilled in the art. Furthermore, the accompanying drawings and the following description are provided for the purpose of enabling those skilled in the art to fully understand this application and are not intended to limit the subject matter of the claims.

[0027] The "range" disclosed in this application is defined by a lower limit and an upper limit. A given range is defined by selecting a lower limit and an upper limit, which define the boundaries of a particular range. Ranges defined in this way can include or exclude endpoints and can be arbitrarily combined; that is, any lower limit can be combined with any upper limit to form a range. For example, if ranges of 60–120 and 80–110 are listed for a specific parameter, it is understood that ranges of 60–110 and 80–120 are also expected. Furthermore, if minimum range values ​​of 1 and 2 are listed, and if maximum range values ​​of 3, 4, and 5 are listed, then the following ranges are all expected: 1–3, 1–4, 1–5, 2–3, 2–4, and 2–5. In this application, unless otherwise stated, the numerical range "a–b" represents a shortened representation of any combination of real numbers between a and b, where a and b are real numbers. For example, the numerical range "0~5" indicates that all real numbers between "0~5" have been listed in this article; "0~5" is simply a shortened representation of these numerical combinations. Furthermore, when a parameter is stated as an integer ≥2, it is equivalent to disclosing that the parameter is, for example, an integer such as 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, etc.

[0028] Unless otherwise specified, all embodiments and optional embodiments of this application can be combined to form new technical solutions.

[0029] Unless otherwise specified, all technical features and optional technical features of this application may be combined to form new technical solutions.

[0030] Unless otherwise specified, all steps in this application may be performed sequentially or randomly, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or it may include steps (b) and (a) performed sequentially. For example, the mention that the method may also include step (c) indicates that step (c) may be added to the method in any order. For example, the method may include steps (a), (b), and (c), or it may include steps (a), (c), and (b), or it may include steps (c), (a), and (b), etc.

[0031] Unless otherwise specified, the terms "comprising" and "including" as used in this application can be open-ended or closed-ended. For example, "comprising" and "including" can mean that other components not listed may also be included, or that only the listed components may be included.

[0032] Unless otherwise specified, the term "or" is inclusive in this application. For example, the phrase "A or B" means "A, B, or both A and B". More specifically, the condition "A or B" is satisfied by any of the following conditions: A is true (or exists) and B is false (or does not exist); A is false (or does not exist) and B is true (or exists); or both A and B are true (or exist).

[0033] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the technical solution of this application is further described below in conjunction with the accompanying drawings and embodiments. However, this application is not limited to the listed embodiments, but should also include any other well-known modifications within the scope of the claims made in this application.

[0034] The term "an embodiment" or "embodiment" as used herein refers to a specific feature, structure, or characteristic that may be included in at least one implementation of this application. The phrase "in one embodiment" appearing in different places throughout this specification does not necessarily refer to the same embodiment, nor is it a single or selective embodiment that is mutually exclusive with other embodiments.

[0035] To better understand the technical solution of this application, a detailed description will be provided below in conjunction with the accompanying drawings and specific implementation methods.

[0036] Conventional two-dimensional molecular spin qubit array fabrication techniques, while capable of constructing ordered molecular arrays on surfaces, are still insufficient in controlling molecular arrangement to achieve highly ordered two-dimensional molecular spin arrays. This results in poor orderliness of the fabricated molecular arrays, which has become a key issue restricting the development of molecular-based quantum devices.

[0037] This application provides a solution, specifically a technique for achieving highly ordered two-dimensional molecular spin qubit arrays on a surface through molecular assembly. A halogen layer deposited on a metal substrate forms a weak physical adsorption on a second-deposited halogenated organic spin molecular layer, promoting the formation of the halogenated organic spin molecular layer on the metal substrate. Furthermore, due to the unique directionality and strength of halogen bonds, halogen atoms can form stable connections with halogen atoms in adjacent molecules, thereby promoting the ordered arrangement of molecules on the substrate surface. The combined effect of the directionality and strength of halogen bonds further enhances the ordered docking between molecules, providing a foundation for constructing highly ordered two-dimensional molecular structures. In addition, the diversity of halogen bonds provides ample space for regulating intermolecular interactions. By changing the type and number of halogen atoms during deposition and precisely controlling the annealing temperature, intermolecular interactions can be optimized, thereby regulating the orderliness of the molecular array. This ability to precisely control these interactions enables the realization of highly ordered two-dimensional molecular spin qubit arrays, offering new possibilities for the development of quantum computing and spintronics. Furthermore, by controlling the deposition parameters, it can be ensured that molecules are deposited on the substrate at an appropriate speed and in an appropriate manner, which helps to reduce random motion between molecules and thus improve the orderliness of the array. Annealing further enhances the ordered arrangement between molecules. Through temperature control, the adsorption and arrangement of molecules on the substrate are made more stable, reducing random collisions and rearrangements between molecules, and producing a highly ordered two-dimensional molecular spin qubit array.

[0038] Reference Figure 1 The first aspect of this application provides a technique for realizing a highly ordered two-dimensional molecular spin qubit array on a surface through molecular assembly, comprising the following steps:

[0039] Step S10, providing halogenated organic spin molecules;

[0040] In one feasible embodiment, a halogenated organic spin molecule is provided for preparing a two-dimensional molecular spin qubit array, wherein the halogenated organic spin molecule is a molecule with halogen bond diversity and an additional electron spin.

[0041] For example, a solution-based organic synthesis method is used to synthesize halogenated organic spin molecules in advance.

[0042] In one feasible embodiment, the halogenated organic spin molecule includes: 3-bromotriphenylmethyl radical molecule 3Br-PTM.

[0043] Halogen bonds possess unique directionality and strength, enabling halogen atoms to form stable connections with halogen atoms in adjacent molecules, thus promoting the ordered arrangement of molecules on the substrate surface. Furthermore, the combined effect of the directionality and strength of halogen bonds leads to more ordered molecular docking, providing a foundation for constructing highly ordered two-dimensional molecular structures. In addition, the diversity of halogen bonds provides ample space for manipulating intermolecular interactions. By altering the type and number of halogen atoms during deposition and precisely controlling the annealing temperature, intermolecular interactions can be optimized, thereby controlling the orderliness of the molecular array. This ability to precisely control these interactions allows us to realize highly ordered two-dimensional molecular spin qubit arrays, offering new possibilities for the development of quantum computing and spintronics. Highly ordered two-dimensional molecular spin qubit arrays can reduce interference between qubits, thus providing more consistent and predictable magnetic properties, promoting the innovative development of novel molecular-based quantum devices and storage devices.

[0044] Step S20: Using halogenated organic spin molecules as a molecular source, a halogen layer is deposited on a metal substrate.

[0045] In one feasible embodiment, a halogenated organic spin molecule is used as the molecular source, and a halogen layer is deposited on a metal substrate by thermal deposition. The halogen layer forms a weak physical adsorption on the second-deposited halogenated organic spin molecule layer, promoting the formation of the halogenated organic spin molecule layer on the metal substrate.

[0046] For example, the halogenated organic spin molecule is a 3-bromotriphenylmethyl radical molecule, which is deposited as an insulating bromine monolayer on a metal substrate by thermal deposition.

[0047] In one feasible embodiment, the temperature of the metal substrate during halogen layer deposition is 20–100°C; for example, 20°C, 25°C, 30°C, 35°C, 40°C, 45°C, 50°C, 55°C, 60°C, 65°C, 70°C, 75°C, 80°C, 85°C, 90°C, 95°C, 100°C, etc. At this temperature, the deposition of halogen atoms can be promoted.

[0048] In one feasible embodiment, the deposition temperature for the halogen layer is 50–100°C; for example, 50°C, 54°C, 55°C, 58°C, 60°C, 64°C, 65°C, 68°C, 70°C, 74°C, 75°C, 78°C, 80°C, 84°C, 85°C, 88°C, 90°C, 94°C, 95°C, 98°C, 100°C, etc. Since halogen elements have low evaporation temperatures, the deposition of a halogen layer on a metal substrate is achieved by controlling a relatively low deposition temperature.

[0049] In one feasible embodiment, the deposition time for the halogen layer is 0.5–220 mins; for example, 0.5 mins, 1 mins, 10 mins, 20 mins, 30 mins, 40 mins, 50 mins, 60 mins, 70 mins, 80 mins, 90 mins, 100 mins, 110 mins, 120 mins, 130 mins, 140 mins, 150 mins, 160 mins, 170 mins, 180 mins, 190 mins, 200 mins, 210 mins, 220 mins, etc. Within this time frame, a monolayer or few-layer molecular coverage can be obtained.

[0050] In one feasible embodiment, the vacuum level is less than 1 × 10⁻⁶ during the deposition of the halogen layer. -9 mbar is used to reduce surface contaminants during the deposition process.

[0051] In one feasible embodiment, the material of the metal substrate includes at least one selected from gold, silver, copper, and platinum. All of these materials have good surface flatness, making them suitable as substrate materials for two-dimensional molecular spin qubit arrays.

[0052] For example, the material of the metal substrate includes: gold (111) single crystal; the gold (111) surface has high crystallinity and flatness, as well as atomic arrangement and electronic structure characteristics, which can form specific interactions with molecules adsorbed on its surface, and the diffusion barrier of the gold (111) surface molecules is relatively low. The low diffusion barrier helps the molecules move on the substrate surface and find the most energy-stable arrangement, thereby forming a highly ordered two-dimensional molecular spin array.

[0053] For example, the metal substrate can be pre-treated by argon ion gun bombardment and annealing.

[0054] Step S30: Using halogenated organic spin molecules as the molecular source, a layer of halogenated organic spin molecules is deposited on the halogen layer and subjected to heating annealing to obtain a two-dimensional molecular spin qubit array.

[0055] In one feasible embodiment, a haloorganic spin molecule layer is deposited on the halogen layer again using a thermal deposition method, using a haloorganic spin molecule as the molecular source; then the obtained sample is subjected to heating and annealing treatment to obtain a highly ordered two-dimensional molecular spin qubit array.

[0056] In one feasible embodiment, the temperature of the metal substrate is 20–30°C when depositing the haloorganic spin molecular layer; for example, 20°C, 21°C, 22°C, 23°C, 24°C, 25°C, 26°C, 27°C, 28°C, 29°C, 30°C, etc. At this temperature, the deposition of haloorganic spin molecules can be promoted.

[0057] In one feasible embodiment, the deposition temperature for depositing the halogenated organic spin molecular layer is 150–450°C; for example, 150°C, 160°C, 170°C, 180°C, 190°C, 200°C, 210°C, 220°C, 230°C, 240°C, 250°C, 260°C, 270°C, 280°C, 290°C, 300°C, 310°C, 320°C, 330°C, 340°C, 350°C, 360°C, 370°C, 380°C, 390°C, 400°C, 410°C, 420°C, 430°C, 440°C, 450°C, etc. By controlling a relatively high deposition temperature, the halogenated organic spin molecules are evaporated, and a halogenated organic spin molecular layer is successfully deposited on the metal substrate.

[0058] In one feasible embodiment, the deposition time for depositing the halogenated organic spin molecular layer is 5 to 120 mins; for example, 5 mins, 10 mins, 20 mins, 30 mins, 40 mins, 50 mins, 60 mins, 70 mins, 80 mins, 90 mins, 100 mins, 110 mins, 120 mins, etc.

[0059] In one feasible embodiment, the vacuum level is less than 1 × 10⁻⁶ when depositing the haloorganic spin molecular layer. -9 mbar is used to reduce surface contaminants during the deposition process.

[0060] In one feasible embodiment, the annealing temperature for the heat annealing treatment is 20–550°C; for example, 20°C, 50°C, 100°C, 150°C, 200°C, 250°C, 300°C, 350°C, 400°C, 450°C, 500°C, 550°C, etc. At this temperature, taking advantage of the diversity of halogen bonds, various highly ordered two-dimensional molecular spin arrays are formed on the surface.

[0061] For example, by controlling different annealing temperatures, five highly ordered two-dimensional molecular spin qubit arrays can be generated.

[0062] In one feasible embodiment, the annealing time for the heat annealing treatment is 5 to 120 mins; for example, 5 mins, 10 mins, 20 mins, 30 mins, 40 mins, 50 mins, 60 mins, 70 mins, 80 mins, 90 mins, 100 mins, 110 mins, 120 mins, etc.

[0063] In one feasible embodiment, the fabricated two-dimensional molecular spin qubit array includes at least one of linear halogen bonds, triangular halogen bonds, and hexagonal halogen bonds.

[0064] For example, two-dimensional molecular spin qubit arrays formed at different annealing temperatures are all composed of various halogen bonds, including linear halogen bonds, triangular halogen bonds, and hexagonal halogen bonds. Other non-covalent bonds include hydrogen bonds, metal coordination bonds, and van der Waals forces. Ordered molecular qubit arrays can also be obtained through covalent bonds.

[0065] For example, when the halogenated organic spin molecule is selected from the 3-bromotriphenylmethyl radical molecule, the two-dimensional molecular spin qubit array includes: linear Br bonds, triangular Br bonds, and hexagonal Br bonds.

[0066] In this embodiment, a halogen layer deposited on a metal substrate forms a weak physical adsorption on a second-deposited haloorganic spin molecular layer, promoting the formation of the haloorganic spin molecular layer on the metal substrate. Furthermore, due to the unique directionality and strength of halogen bonds, halogen atoms can form stable connections with halogen atoms in adjacent molecules, thereby promoting the ordered arrangement of molecules on the substrate surface. Consequently, the combined effect of the directionality and strength of halogen bonds makes the intermolecular docking more ordered, providing a foundation for constructing highly ordered two-dimensional molecular structures. In addition, the diversity of halogen bonds provides ample space for regulating intermolecular interactions. By changing the type and number of halogen atoms during deposition and precisely controlling the annealing temperature, intermolecular interactions can be optimized, thereby regulating the orderliness of the molecular array. This ability to finely regulate allows us to realize highly ordered two-dimensional molecular spin qubit arrays, providing new possibilities for the development of quantum computing and spintronics. Furthermore, by controlling the deposition parameters, it can be ensured that molecules are deposited on the substrate at appropriate speeds and in appropriate ways, which helps reduce random motion between molecules, thereby improving the orderliness of the array. Annealing further enhances the ordered arrangement between molecules. By controlling the temperature, the adsorption and arrangement of molecules on the substrate become more stable, reducing random collisions and rearrangements between molecules, thus producing a highly ordered two-dimensional molecular spin qubit array.

[0067] In order to enable those skilled in the art to clearly understand the details and operations of the above embodiments of this application, and to demonstrate the significant improvement in performance of the embodiments of this application, the above technical solutions are illustrated below through multiple embodiments.

[0068] Example 1

[0069] (1) Provides 3-bromotriphenylmethyl radical molecules and a clean gold substrate;

[0070] (2) A bromine monolayer was deposited on a gold substrate using 3-bromotriphenylmethyl radicals as the molecular source. The substrate temperature was 30°C, the deposition temperature was 80°C, the deposition time was 5 mins, and the vacuum degree was less than 1×10⁻⁶. -9 mbar; In-situ imaging characterization of the sample was performed using low-temperature high-resolution scanning tunneling microscopy (LT-STM), and the results were referenced. Figure 2 As can be seen, a bromine monolayer is formed on the surface of the gold substrate;

[0071] (3) Continue heating the 3-bromotriphenylmethyl radical molecules to deposit a 3-bromotriphenylmethyl radical molecule layer on the bromine monolayer. The substrate temperature is 30℃, the deposition temperature is 220℃, the deposition time is 5 mins, and the vacuum degree is less than 1×10⁻⁶. -9 mbar;

[0072] (4) The sample was subjected to heating and annealing treatment, wherein the annealing temperature was 250℃ and the annealing time was 5mins, to obtain a two-dimensional molecular spin quantum bit array.

[0073] Example 2

[0074] The experimental procedure is the same as in Example 1, except that:

[0075] The annealing temperature in step (4) is 200℃.

[0076] Example 3

[0077] The experimental procedure is the same as in Example 1, except that:

[0078] The annealing temperature in step (4) is 100℃.

[0079] Example 4

[0080] The experimental procedure is the same as in Example 1, except that:

[0081] The annealing temperature in step (4) is 20℃.

[0082] In-situ imaging characterization of Examples 1 to 4 using LT-STM revealed the formation of various two-dimensional molecular spin qubit arrays (i.e., spin arrays) at each annealing temperature. The types of spin arrays observed were described below. Figure 3 Spin array 1 is mainly a spin qubit array of triangular Br bonds, with high bromine bond interaction energy, the most stable structure, and the highest yield. Spin array 2 is mainly a spin qubit array of hexagonal Br bonds, mainly involving bromine bond interaction energy and van der Waals forces, with the highest interaction energy, the highest molecular density, and a relatively stable structure. Spin array 3 is mainly a spin qubit array of linear Br bonds, with the lowest bromine bond interaction energy, the least stable structure, and the lowest yield. Spin array 4 is mainly a combination of spin qubit arrays of triangular and linear Br bonds, with moderate intermolecular interaction energy. Spin array 5 is mainly a spin qubit array of spin qubit arrays of triangular and linear Br bonds, but the unit cell is very large, and the interaction energy is similar to that of spin array 4. The proportions of each spin array generated in Examples 1 to 4 are shown in Table 1 below, where "√" represents the appearance of this type of spin array, and " / " represents its absence.

[0083]

[0084]

[0085] Furthermore, through LT-STM imaging and density functional theory (DFT) calculations, the halogen bond forms included in the two-dimensional molecular spin qubit arrays in Examples 1 to 4 were determined, and the results are as follows: Figure 4 As shown, the two-dimensional molecular spin qubit arrays in Examples 1 to 4 all formed linear Br bonds, triangular Br bonds, and hexagonal Br bonds.

[0086] In summary, the embodiments of this application not only simplify the fabrication process of two-dimensional molecular spin qubit arrays, but also improve the orderliness of two-dimensional molecular spin qubit arrays, further promoting the practical application of molecular-based quantum devices.

[0087] The above are merely preferred embodiments of this application and do not limit the patent scope of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the patent protection scope of this application.

Claims

1. A method for realizing a highly ordered two-dimensional molecular spin qubit array on a surface through molecular assembly, characterized in that, The method includes the following steps: Provides halogenated organic spin molecules; Using the halogenated organic spin molecules as a molecular source, a halogen layer is deposited on a metal substrate; Using the halogenated organic spin molecules as a molecular source, a layer of halogenated organic spin molecules is deposited on the halogen layer and subjected to heating annealing to obtain a two-dimensional molecular spin qubit array. The deposition method of the halogen layer and / or the halogenated organic spin molecular layer includes: thermal deposition; When depositing the halogen layer, the temperature of the metal substrate is 20~100 ℃, the deposition temperature is 50~100 ℃, and the deposition time is 0.5~220 mins; When depositing the haloorganic spin molecular layer, the temperature of the metal substrate is 20~30 ℃, the deposition temperature is 150~450 ℃, and the deposition time is 5~120 mins; The annealing temperature for the heating annealing process is 20~550 ℃, and the annealing time is 5~120 mins.

2. The method for realizing a highly ordered two-dimensional molecular spin qubit array on a surface through molecular assembly as described in claim 1, characterized in that, The halogenated organic spin molecules include: 3-bromotriphenylmethyl free radical molecules.

3. The method for realizing a highly ordered two-dimensional molecular spin qubit array on a surface through molecular assembly as described in claim 1, characterized in that, The material of the metal substrate includes at least one of gold, silver, copper, and platinum.

4. The method for realizing a highly ordered two-dimensional molecular spin qubit array on a surface through molecular assembly as described in claim 1, characterized in that, The vacuum level during the deposition of the halogen layer and / or the halogenated organic spin molecular layer is less than 1 × 10⁻⁶. -9 mbar.

5. A two-dimensional molecular spin qubit array, characterized in that, The two-dimensional molecular spin qubit array is prepared by the method described in any one of claims 1 to 4, which achieves a highly ordered two-dimensional molecular spin qubit array by assembling molecules on a surface.

6. The two-dimensional molecular spin qubit array as described in claim 5, characterized in that, The two-dimensional molecular spin qubit array includes at least one of linear halogen bonds, triangular halogen bonds, and hexagonal halogen bonds.

Images