Detection device and radiation determination device

By designing a detection device including a container, an electronic detector, a drift electrode and a radiation detector, using a readout circuit and a logic circuit to process signals, the problem of low radiation data processing efficiency in the prior art is solved, and more efficient data analysis and computer load management are achieved.

CN119731557APending Publication Date: 2025-03-28DAI NIPPON PRINTING CO LTD
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Patent Information

Application Number
CN202380061758.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2022-08-31
Filing Date
2023-08-31
Publication Date
2025-03-28

AI Technical Summary

Technical Problem

Existing detection devices are difficult to effectively analyze and process radiation data that is not accompanied by Compton scattering, resulting in increased computer load and reduced data usefulness.

Method used

A detection device is designed, including a container, an electronic detector, a drift electrode and a radiation detector. The signals of the radiation detector and the electronic detector are processed respectively through the first readout circuit and the second readout circuit, and a trigger signal is generated through the logic circuit to control data transmission and reduce unnecessary data transmission.

Benefits of technology

It effectively reduces the amount of radiation-related data sent to the computer, reduces the computer load, improves the usefulness of the data, and optimizes the calculation and imaging process of the radiation incident direction and the position of the radiation source.

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Abstract

A detection device for detecting radiation includes: a container in which a gas is accommodated; the electron detector is positioned in the container, detects electrons generated by Compton scattering, and generates an analog signal; a drift electrode facing the electron detector; a radiation detector that detects radiation scattered by Compton scattering and generates an analog signal; a first readout circuit that digitizes the analog signal generated by the radiation detector, generates first data, and stores the first data in a first buffer; and a second readout circuit that digitizes the analog signal generated by the electron detector and generates second data. The first readout circuit transmits first final data including the first data stored in the first buffer to an external computer according to the first trigger signal.
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Description

Technical Field

[0001] Embodiments of the present disclosure relate to a detection device that detects radiation and a radiation determination device. Background Art

[0002] As a device for detecting radiation, there is known a detection device for detecting Compton scattered radiation and electrons generated by Compton scattering, as disclosed in, for example, Patent Documents 1 to 3. The detection device includes a container containing a gas, an electron detector for detecting electrons generated by Compton scattering, and a radiation detector for detecting radiation scattered by Compton scattering.

[0003] Data related to electrons detected by the electron detector contributes to the analysis of radiation. For example, as described in Patent Document 1, information related to the scattered direction of radiation is calculated from information related to the position of radiation detected by the radiation detector and information related to the generation point of the electrons.

[0004] Prior Art Literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2015-148448

[0007] Patent Document 2: Japanese Patent Application Publication No. 2016-161522

[0008] Patent Document 3: International Publication No. 2017 / 209059 Summary of the invention

[0009] In addition to radiation scattered by Compton scattering, other radiation may reach the radiation detector. Other radiation is radiation that reaches the radiation detector without being scattered inside the container, radiation that reaches the radiation detector without passing through the container, etc. Other radiation is not accompanied by the generation of electrons inside the container. Therefore, analysis related to other radiation is limited compared to analysis of radiation scattered by Compton scattering. Therefore, the usefulness of data related to other radiation is lower than the usefulness of data on radiation scattered by Compton scattering.

[0010] The data of the radiation acquired by the radiation detector is sent to the computer. When all the data related to the radiation acquired by the radiation detector is sent to the computer, the load on the computer becomes heavy.

[0011] An object of the embodiments of the present disclosure is to provide a detection device that can effectively solve such problems.

[0012] The embodiments of the present disclosure are related to the following [1] to

[28] .

[0013] [1] A detection device for detecting radiation, the detection device comprising:

[0014] A container containing a gas;

[0015] an electron detector, located inside the container, for detecting electrons generated by Compton scattering and generating an analog signal;

[0016] a drift electrode, disposed opposite to the electronic detector;

[0017] a radiation detector that detects radiation scattered by the Compton scattering and generates an analog signal;

[0018] a first readout circuit that digitizes the analog signal generated by the radiation detector to generate first data and stores the first data in a first buffer; and

[0019] a second readout circuit that digitizes the analog signal generated by the electron detector to generate second data,

[0020] The first readout circuit transmits first final data including the first data stored in the first buffer to an external computer in response to a first trigger signal.

[0021] [2] In the detection device described in [1],

[0022] The first final data may include information related to a time when the first data is stored in the first buffer.

[0023] [3] In the detection device described in [1] or [2],

[0024] The radiation detector may also include a plurality of detection elements.

[0025] The first final data may include information on an arrival position of radiation on the radiation detector.

[0026] [4] In the detection device described in [3],

[0027] The first final data may include information related to the intensity of the analog signal generated by the radiation detector.

[0028] [5] In the detection device described in any one of [1] to [4], the first buffer of the first readout circuit may store the first data during a first storage period, and the first storage period may be less than a maximum movement time. The maximum movement time may be a time required for electrons to move from the drift electrode to the electron detector.

[0029] [6] In the detection device described in [5], the maximum movement time can also be less than 10.24 μs.

[0030] [7] In the detection device described in any one of [1] to [6], the first trigger signal may be generated in response to generation of the second data.

[0031] [8] In the detection device described in [7], the detection device may also include a logic circuit connected to the first readout circuit and the second readout circuit, and the second readout circuit may also generate a second hit signal when the intensity of the analog signal of the electronic detector exceeds a threshold value, and the logic circuit may also generate the first trigger signal in response to the generation of the second hit signal.

[0032] [9] In the detection device described in [8], the second read-out circuit may also include a second buffer for storing the second data, the logic circuit may also generate a second trigger signal in response to the generation of the second hit signal, and the second read-out circuit may also send the second final data including the second data stored in the second buffer to the computer according to the second trigger signal.

[0033]

[10] In the detection device described in [9], the logic circuit can also generate the first trigger signal and the second trigger signal simultaneously.

[0034]

[11] In the detection device described in [9] or

[10] , the logic circuit may also generate the second trigger signal after a second delay time has passed since the second hit signal was generated in the electronic detector.

[0035]

[12] In the detection device described in

[11] , the second delay time may be equal to or less than a maximum movement time. The maximum movement time may be a time required for electrons to move from the drift electrode to the electron detector.

[0036]

[13] In the detection device described in any one of [9] to

[13] , the second buffer of the second readout circuit may store the second data during a second storage period, and the second storage period may be longer than the second delay time.

[0037]

[14] In the detection device described in any one of [9] to

[13] , the electronic detector may also include multiple anode electrodes and multiple cathode electrodes, the analog signal of the electronic detector may also include an anode analog signal generated by the multiple anode electrodes and a cathode analog signal generated by the multiple cathode electrodes, the second readout circuit may also generate an anode hit signal when the intensity of the anode analog signal exceeds a threshold, and generate a cathode hit signal when the intensity of the cathode analog signal exceeds a threshold, and the logic circuit may also generate the second trigger signal in response to the generation of both the anode hit signal and the cathode hit signal.

[0038]

[15] In the detection device described in any one of [9] to

[14] , the second final data may include information related to the intensity of the analog signal generated by the electronic detector.

[0039]

[16] In the detection device described in

[15] , the second readout circuit may acquire information related to the intensity of the analog signal generated by the electronic detector at a sampling frequency of less than 50 MHz.

[0040]

[17] In the detection device described in

[15] , the second readout circuit may acquire information related to the intensity of the analog signal generated by the electronic detector at a sampling frequency of not less than 10 MHz and not more than 20 MHz.

[0041]

[18] In the detection device described in any one of [8] to

[17] , the first readout circuit may also generate the first hit signal when the intensity of the analog signal of the radiation detector exceeds a threshold value, and the logic circuit may also generate the first trigger signal when the second hit signal is generated within the first maintenance period starting from the generation of the first hit signal.

[0042]

[19] In the detection device described in

[18] , the first maintenance period may be equal to or shorter than a maximum movement time. The maximum movement time may be a time required for electrons to move from the drift electrode to the electron detector.

[0043]

[20] In the detection device described in any one of [8] to

[17] , the first readout circuit may also generate a first hit signal when the intensity of the analog signal of the radiation detector exceeds a threshold value, and the logic circuit may also generate the first trigger signal and the second trigger signal when the second hit signal is generated within a first maintenance period starting from the generation of the first hit signal.

[0044]

[21] In the detection device described in any one of [1] to [6], the first readout circuit may generate a first hit signal when the intensity of the analog signal of the radiation detector exceeds a threshold value, and the first trigger signal may be generated after a first delay time has passed since the generation of the first hit signal.

[0045]

[22] In the detection device described in

[21] , the first delay time may be greater than or equal to 0.45 times and less than or equal to 1.00 times the maximum movement time. The maximum movement time may be the time required for electrons to move from the drift electrode to the electron detector.

[0046]

[23] In the detection device described in

[21] or

[22] , the second readout circuit may generate a second hit signal when the intensity of the analog signal of the electronic detector exceeds a threshold, and the first trigger signal may be generated when the second hit signal is generated during the first delay time.

[0047]

[24] In the detection device described in any one of [1] to

[23] , the first readout circuit may send information related to the detection delay time in the radiation detector to the computer.

[0048]

[25] In the detection device described in

[24] , the detection delay time may be calculated based on the intensity of the analog signal generated by the electronic detector.

[0049]

[26] A radiation determination device comprising:

[0050] The detection device described in any one of [1] to

[25] ; and

[0051] A computer receives the first final data and the second final data sent by the detection device,

[0052] The computer calculates an incident direction of radiation to the detection device based on the first final data and the second final data.

[0053]

[27] A radiation determination device comprising:

[0054] The detection device described in any one of [1] to

[25] ; and

[0055] A computer receives the first final data and the second final data sent by the detection device,

[0056] The computer images the position of a radiation source that radiates radiation based on the first final data and the second final data.

[0057]

[28] A radiation determination device comprising:

[0058] The detection device described in

[24] or

[25] ; and

[0059] a computer, receiving the first final data, the second final data and the information related to the detection delay time sent by the detection device,

[0060] The computer determines the coordinates of the electrons generated by Compton scattering based on the first final data, the second final data, and the information related to the detection delay time.

[0061] According to the embodiments of the present disclosure, it is possible to reduce the amount of radiation-related data sent to a computer. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] Figure 1 It is a cross-sectional view showing an example of a detection device.

[0063] Figure 2 It is a perspective view showing an example of an electron detector.

[0064] Figure 3 It is a cross-sectional view showing an example of an electron detector.

[0065] Figure 4 It is a perspective view showing an example of a radiation detector.

[0066] Figure 5 This is a diagram showing an example of Compton scattering generated in a detection device.

[0067] Figure 6 It is a diagram showing the situation of electrons reaching the electron detector.

[0068] Figure 7 This is a diagram showing an example of an analog signal generated by a radiation detector and an analog signal generated by an electron detector.

[0069] Figure 8 This is a diagram showing an example of a circuit for generating data.

[0070] Fig. 9 This is a diagram showing an example of a second readout circuit and a logic circuit.

[0071] Fig.10 This is a diagram showing an example of an anode readout circuit.

[0072] Fig.11 This is a diagram showing an example of the first readout circuit.

[0073] Fig.12 It is a diagram showing an example of signal processing.

[0074] Fig.13 This is a diagram showing an example of the first final data and the second final data transmitted to the computer.

[0075] Fig.14 It is a diagram showing an example of signal processing.

[0076] Fig.15 This is a diagram showing an example of signal processing in the first modification.

[0077] Fig.16 It is a diagram showing a second readout circuit and a logic circuit in the second variation.

[0078] Fig.17 It is a diagram showing signal processing in the second variant.

[0079] Fig.18 It is a perspective view showing an electron detector in the third modified example.

[0080] Fig.19 This is a diagram showing an example of a second readout circuit and a logic circuit in the third modification.

[0081] Fig. 20 It is a diagram showing a first readout circuit, a second readout circuit, and a logic circuit in a fourth variation.

[0082] Fig.21 It is a diagram showing signal processing in the fourth variant.

[0083] Fig. 22 It is a diagram showing the structure of an apparatus for measuring the maximum moving time.

[0084] Fig.23 It means by Fig. 22 A graph of the number of electrons detected by the device.

[0085] Fig.24 It is a diagram showing a simulation signal in the fifth variant.

[0086] Fig.25 It is a diagram showing signal processing in the 6th variant.

[0087] Fig.26 It is a diagram showing signal processing in the 6th variant. DETAILED DESCRIPTION

[0088] The embodiment shown below is an example of an embodiment of the present disclosure, and the present disclosure is not limited to these embodiments for interpretation. In addition, in this specification, the terms such as "substrate", "base material", "sheet material", and "film" are not distinguished from each other only based on the difference in the names. For example, "substrate" and "base material" are concepts that also include components that can be called sheets and films. Furthermore, the shapes, geometric conditions used in this specification and the terms such as "parallel", "orthogonal", lengths, angle values, etc. that determine their degree are not subject to strict meanings, but are interpreted within the scope of the degree to which the same function can be expected.

[0089] In the drawings referred to in this specification, the same parts or parts having the same functions are marked with the same symbols or similar symbols, and their repeated descriptions are sometimes omitted. In addition, for the convenience of description, the dimensional ratios of the drawings are sometimes different from the actual ratios, and a part of the structure is sometimes omitted from the drawings.

[0090] In this specification, when multiple candidates for upper limit values ​​and multiple candidates for lower limit values ​​are listed for a certain parameter, the numerical range of the parameter can also be constructed by combining any candidate for upper limit value and any candidate for lower limit value. For example, consider the case where it is recorded that "Parameter B is, for example, greater than A1, or greater than A2, or greater than A3. Parameter B is, for example, less than A4, or less than A5, or less than A6." In this case, the numerical range of parameter B can also be greater than A1 and less than A4, or greater than A1 and less than A5, or greater than A1 and less than A6, or greater than A2 and less than A4, or greater than A2 and less than A5, or greater than A2 and less than A6, or greater than A3 and less than A4, or greater than A3 and less than A5, or greater than A3 and less than A6.

[0091] Hereinafter, the structure of the detection device 10 according to the embodiment of the present disclosure will be described in detail with reference to the drawings. First, the outline of the detection device 10 will be described. Figure 1 It is a cross-sectional view showing an example of the detection device 10 .

[0092] (Detection device)

[0093] The detection device 10 includes a container 20, an electron detector 30, a drift electrode 40, and a radiation detector 50 located inside the container 20. The container 20 is, for example, a chamber. At least a rare gas such as argon or xenon is contained inside the container 20. In addition to the rare gas, a quenching gas having an extinction effect such as carbon dioxide or methane may also be contained inside the container 20.

[0094] The container 20 includes a first portion 21, a second portion 22 facing the first portion 21 in a first direction D1, and a side portion 23 extending from the first portion 21 toward the second portion 22. The detection device 10 can be used to detect radiation incident into the interior of the container 20 through the first portion 21. Figure 1 As shown, the container 20 may also have a cylindrical shape. That is, the side portion 23 may also have a circular cross-section. Although not shown, the container 20 may also have a shape other than a cylindrical shape, such as a cube or a rectangular parallelepiped. The first portion 21 may also be bent to protrude toward the outside of the container 20. The container 20 may also include a corner portion 24 located between the first portion 21 and the side portion 23. The first portion 21 may also extend flatly. The corner portion 24 may also include a surface extending in a direction different from that of the first portion 21 and the side portion 23.

[0095] The object radiating radiation is located outside the container 20. The first portion 21 may include a surface of the container 20 that is closest to the object.

[0096] It is preferred that the material of the container 20 allows radiation to easily pass through. This can prevent the radiation from being absorbed or scattered by the container 20 while passing through the container 20. The container 20 may include, for example, plastic or metal. The plastic may also be fiber-reinforced plastic. When a metal is used, the container 20 may be composed of a single metal element or an alloy. As the metal, for example, aluminum or an aluminum alloy may be used. In order to reduce the weight of the container 20, a metal having a specific gravity of less than 4 may also be used.

[0097] When the container 20 is made of plastic, the thickness of the container 20 is, for example, 1 mm or more, 5 mm or more, or 10 mm or more. The thickness of the container 20 is, for example, 30 mm or less, 25 mm or less, or 20 mm or less.

[0098] When the container 20 is made of metal, the thickness of the container 20 is, for example, 2 mm or more, 3 mm or more, or 5 mm or more. The thickness of the container 20 is, for example, 20 mm or less, 15 mm or less, or 10 mm or less.

[0099] The drift electrode 40, the electron detector 30, and the radiation detector 50 are arranged in this order on the side from the first portion 21 toward the second portion 22. That is, the drift electrode 40 is located closer to the first portion 21 than the electron detector 30. The radiation detector 50 is located closer to the second portion 22 than the electron detector 30. “Structural element A is located closer to the first portion 21 than structural element B” means that structural element A is located closer to structural element B than structural element B. Figure 1The arrow S1 indicates the direction from the second portion 22 toward the first portion 21. The distance from the structural element B to the first portion 21 may be longer or shorter than the distance from the structural element B to the structural element A.

[0100] The drift electrode 40 may be closer to the first portion 21 than the second portion 22. The electron detector 30 and the radiation detector 50 may be closer to the second portion 22 than the first portion 21.

[0101] The radiation detector 50 may be located outside the container 20. For example, the radiation detector 50 may be located outside the second portion 22. The radiation detector 50 may be opposed to the drift electrode 40 via the second portion 22.

[0102] Although not shown, the radiation detector 50 may be located inside the container 20. For example, the radiation detector 50 may be located between the second portion 22 and the electron detector 30.

[0103] The electron detector 30 , the drift electrode 40 , and the radiation detector 50 will be described in detail.

[0104] When the radiation incident on the inside of the container 20 collides with the gas, Compton scattering may occur. If Compton scattering occurs, recoil electrons are generated. In addition, ionized electrons are generated along the flight path of the recoil electrons. The electron detector 30 detects the ionized electrons. By detecting the ionized electrons, the flight path and energy of the recoil electrons can be calculated.

[0105] Figure 2 : is a stereoscopic diagram showing an example of an electron detector 30. The electron detector 30 includes a plurality of electrodes. Electrons generated by Compton scattering arrive at a portion of the plurality of electrodes. A portion of the electrodes generates an analog signal as the electrons arrive. By determining a portion of the electrodes that generate the analog signal, information related to the arrival position of the electrons on the electron detector 30 is obtained. Based on the intensity of the analog signal, information related to the energy of the electrons that arrive at the electron detector 30 is obtained. The intensity of the analog signal is calculated based on the voltage, amplitude, etc. of the analog signal. For example, the voltage or amplitude of the analog signal can be used as the intensity of the analog signal.

[0106] The plurality of electrodes of the electron detector 30 may also include a plurality of anode electrodes 31, a plurality of cathode electrodes 32, and a substrate 35. The substrate 35 includes a first surface 351 and a second surface 352 extending in a direction intersecting the first direction D1. The first surface 351 is opposite to the drift electrode 40. The second surface 352 is located on the opposite side of the first surface 351.

[0107] The plurality of cathode electrodes 32 may be located on the first surface 351. The plurality of cathode electrodes 32 may be arranged in the second direction D2 orthogonal to the first direction D1. Each cathode electrode 32 may extend in a third direction D3 orthogonal to the first direction D1 and the second direction D2.

[0108] The plurality of anode electrodes 31 may be located on the second surface 352 and include a plurality of line portions 311 arranged in the third direction D3. Each line portion 311 may extend along the second direction D2. Figure 3 3 is a cross-sectional view showing an example of the electron detector 30. A plurality of through portions 312 arranged along the second direction D2 and penetrating the substrate 35 may be connected to each line portion 311. The surface of the through portion 312 may be located at the opening 33 formed in the cathode electrode 32.

[0109] The electrons generated by Compton scattering reach a part of the anode electrodes 31 among the multiple anode electrodes 31 and a part of the cathode electrodes 32 among the multiple cathode electrodes 32. A part of the anode electrodes 31 generates an anode analog signal as the electrons arrive. By determining a part of the anode electrodes 31 that generates the anode analog signal, information related to the position of the electrons arriving at the electron detector 30 in the third direction D3 is obtained. A part of the cathode electrodes 32 generates a cathode analog signal as the electrons arrive. By determining a part of the cathode electrodes 32 that generates the cathode analog signal, information related to the position of the electrons arriving at the electron detector 30 in the second direction D2 is obtained. In this way, Figure 2 as well as Figure 3 The electron detector 30 shown can efficiently provide information about the positions of the electrons reaching the electron detector 30 in the second direction D2 and the positions in the third direction D3.

[0110] The electron detector 30 may also be provided with a second readout circuit 130 described later for processing analog signals. The second readout circuit 130 may also be provided in a component different from the electron detector 30. In this case, a cable, a sealed connector, or a wiring substrate for transmitting analog signals to the second readout circuit 130 may also be provided in the electron detector 30.

[0111] The drift electrode 40 is arranged to face the electron detector 30. For example, the drift electrode 40 faces the electron detector 30 in the first direction D1. In this case, the drift electrode 40 includes a surface extending in a direction orthogonal to the first direction D1. An electric field from the electron detector 30 toward the drift electrode 40 is generated between the electron detector 30 and the drift electrode 40. Ionized electrons accompanying recoil electrons generated by Compton scattering are attracted to the electron detector 30 side by the electric field.

[0112] The radiation detector 50 detects the scattered radiation. In the present embodiment, the radiation scattered between the electron detector 30 and the drift electrode 40 is detected by the radiation detector 50 after passing through the electron detector 30 and the second portion 22 of the container. The radiation detector 50 can detect the position and energy of the radiation reaching the radiation detector 50.

[0113] Figure 4 : is a perspective view showing an example of a radiation detector 50. The radiation detector 50 may also include a plurality of detection elements 51 and a circuit substrate 52 supporting the detection elements 51. The plurality of detection elements 51 may also be arranged in a direction intersecting the first direction D1. For example, the plurality of detection elements 51 may also be arranged in a second direction D2 and a third direction D3 orthogonal to the first direction D1.

[0114] The radiation reaches some of the detection elements 51 among the plurality of detection elements 51. Some of the detection elements 51 generate analog signals in response to the arrival of the radiation. By identifying some of the detection elements 51 that generate the analog signals, information related to the arrival position of the radiation on the radiation detector 50 is obtained. Based on the intensity of the analog signal, information related to the energy of the radiation reaching the radiation detector 50 is obtained. The intensity of the analog signal is calculated based on the voltage, amplitude, etc. of the analog signal.

[0115] The structure of the detection element 51 is arbitrary as long as it can detect radiation.

[0116] For example, the detection element 51 may include a scintillator that emits fluorescence when stimulated by the scattered radiation and a photodetector that detects the fluorescence. The photodetector may include, for example, an avalanche photodiode.

[0117] The detection element 51 may include a semiconductor detection element that detects the scattered radiation. The semiconductor detection element may include, for example, a semiconductor including cadmium zinc telluride.

[0118] The radiation detector 50 may also include a first detection element 51 capable of detecting radiation having an energy within a first range, and a second detection element 51 capable of detecting radiation having an energy within a second range different from the first range. Thus, the energy range of radiation that the radiation detector 50 can detect can be expanded.

[0119] The radiation detected by the detection element 51 is processed as an electrical signal by the circuit substrate 52. The circuit substrate 52 may also include a circuit, wiring, etc. for processing the electrical signal. The electrical signal may also be transmitted to the outside of the container 20 via, for example, a cable, a sealed connector, a wiring substrate, etc., which are not shown and are connected to the circuit substrate 52.

[0120] Other components of the detection device 10 will be described.

[0121] like Figure 1 As shown, the detection device 10 may also include an auxiliary drift electrode 70 located between the electron detector 30 and the drift electrode 40. The auxiliary drift electrode 70 is provided to improve the uniformity of the distribution of the electric field between the electron detector 30 and the drift electrode 40.

[0122] The auxiliary drift electrode 70 may include a plurality of annular electrodes 72. The plurality of annular electrodes 72 are arranged along the direction in which the electron detector 30 and the drift electrode 40 are opposed to each other. The annular electrode 72 includes an annular first surface 73 facing the drift electrode 40 and an annular second surface 74 located on the opposite side of the annular first surface 73.

[0123] The annular electrode 72 may be formed with an opening 721. The opening 721 may overlap with the electron detector 30 in the opposing direction. The annular electrode 72 may not overlap with the electron detector 30 in the opposing direction. The annular electrode 72 may overlap with the drift electrode 40 in the opposing direction.

[0124] The auxiliary drift electrode 70 may also include a spacer 75 disposed between two adjacent annular electrodes 72 in the opposing direction. The spacer 75 determines the distance between two adjacent annular electrodes 72 in the opposing direction. The distance is determined by the number of annular electrodes 72, the voltage between the electron detector 30 and the drift electrode 40, and the like.

[0125] The drift electrode 40 may be mounted on the auxiliary drift electrode 70. For example, the auxiliary drift electrode 70 may include a spacer 75 located between the drift electrode 40 and the annular electrode 72. The structure including the drift electrode 40 and the plurality of annular electrodes 72 is also referred to as a drift holder 45.

[0126] The auxiliary drift electrode 70 may also include a wiring 76 that electrically connects two annular electrodes 72 that are adjacent in the opposing direction. The auxiliary drift electrode 70 may also include a wiring 76 that electrically connects the drift electrode 40 that is adjacent in the opposing direction to the annular electrode 72. The auxiliary drift electrode 70 may also include a resistor 77 inserted into the path of the wiring 76. By electrically connecting two adjacent annular electrodes 72, it is possible to adjust the voltage between the two annular electrodes 72. Thus, the potential of the annular electrodes 72 arranged in the opposing direction can be changed in stages. For example, assuming that the potential of the drift electrode 40 is -4000V, the potential of the electron detector 30 is 0V, and 20 annular electrodes 72 are arranged between the drift electrode 40 and the electron detector 30. In this case, the potential of the plurality of annular electrodes 72 arranged from the drift electrode 40 toward the electron detector 30 can be changed in stages such as -3800V, -3600V, -3400V, etc. This can improve the uniformity of the electric field formed in the space between the drift electrode 40 and the electron detector 30 .

[0127] like Figure 1 As shown, the auxiliary drift electrode 70 may also be supported by a relay substrate 90. The relay substrate 90 may also support the electron detector 30. For example, the relay substrate 90 may also include a first substrate 91 supporting the electron detector 30 and a second substrate 92 supporting the auxiliary drift electrode 70. The second substrate 92 may also be located between the first substrate 91 and the auxiliary drift electrode 70.

[0128] like Figure 1 As shown, the detection device 10 may include an electronic amplifier 60 located between the electron detector 30 and the drift electrode 40. The electronic amplifier 60 is disposed, for example, to face the electron detector 30 and the drift electrode 40 in the first direction D1.

[0129] The electron amplifier 60 is configured to amplify and generate electron avalanche. The electron amplifier 60 includes an electrode having a potential higher than that of the drift electrode 40. The electron amplifier 60 may include a plurality of through holes 61 penetrating the electron amplifier 60. The electron amplifier 60 may be configured to generate an electric field toward the drift electrode 40 through the through holes 61.

[0130] Next, Compton scattering occurring in the detection device 10 will be described. Figure 5is a diagram showing an example of Compton scattering. Symbol R1 represents radiation that passes through the first portion 21 of the container 20 and enters the interior of the container 20. The radiation R1 is, for example, a charged particle beam (e.g., α-ray, β-ray, etc.), an uncharged particle beam (e.g., neutral particles, neutron rays, etc.), an electromagnetic wave (e.g., gamma-ray, X-ray, etc.), or a non-ionizing radiation (e.g., ultraviolet light, etc.). After passing through the drift electrode 40, the radiation R1 reaches the space between the electron detector 30 and the drift electrode 40.

[0131] If the radiation R1 collides with the gas, Compton scattering sometimes occurs. Symbol P indicates the position where the scattering occurs. Position P is also called a scattering point. Symbol R2 represents the scattered radiation. After the radiation R2 passes through the electron detector 30, it reaches the radiation detector 50. When the radiation detector 50 is located outside the container 20, the radiation R2 also passes through the second part 22 of the container 20. The radiation R2 is detected by a part of the detection elements 51 among the multiple detection elements 51. For example, the radiation R2 is detected by one detection element 51. Thus, the arrival position and energy of the radiation R2 can be calculated.

[0132] If Compton scattering occurs, a recoil electron is generated. Symbol R3 represents an electron cloud formed on the flight path of the recoil electron. Symbol e1 represents an electron located at the starting point of the electron cloud R3. The electron e1 may also be located at the scattering point P. Symbol e2 represents an electron located at the end point of the electron cloud R3.

[0133] Each electron of the electron cloud R3 moves toward the electron detector 30 through the electric field E1. Such movement is also called drift. Each electron of the electron cloud R3 that reaches the electron detector 30 is detected by the anode electrode 31 and the cathode electrode 32 of the electron detector 30. Thus, the position and energy of each electron of the electron cloud R3 can be calculated. In addition, the flight trajectory and energy of the recoil electron and the scattering point P can be calculated.

[0134] The radiation R2 moves from the scattering point P to the radiation detector 50 at approximately the speed of light. The recoil electron also moves from the position of the electron e1 to the position of the electron e2 at approximately the speed of light. On the other hand, the speed V at which the electron cloud R3 moves toward the electron detector 30 is slower than the speed of light. Therefore, each electron of the electron cloud R3 reaches the electron detector 30 after the radiation R2 reaches the radiation detector 50. The time at which each electron of the electron cloud R3 reaches the electron detector 30 varies depending on the distance from each electron to the electron detector 30. Figure 6 In the example shown, the distance from the electron e2 to the electron detector 30 is shorter than the distance from the electron e1 to the electron detector 30. Therefore, the electron e2 reaches the electron detector 30 before the electron e1.

[0135] exist Figure 6In the figure, the symbols t0, t1, and t2 surrounded by a quadrilateral frame represent the time when the radiation R2 or the electron of the electron cloud R3 is generated or arrives at the position indicated by the symbol. When the time required for the movement of the radiation R2 and the recoil electron is ignored, the time when the electron e1 is generated, the time when the electron e2 is generated, and the time when the radiation R2 arrives at the radiation detector 50 are all t0. The electron e1 arrives at the electron detector 30 at the time t1 after the time t0. The electron e2 arrives at the electron detector 30 at the time t2. The time t2 is later than the time t0, and the time t1 is later than the time t2.

[0136] The radiation detector 50 generates an analog signal when detecting the radiation R2. The electron detector 30 generates an analog signal when detecting electrons. Figure 7 : is a diagram showing an example of an analog signal W_R2 generated by the radiation detector 50 and an analog signal W_R3 generated by the electron detector. The analog signal of the radiation detector 50 is generated at time t0. Time ΔT2 is the difference between time t0 and time t2. Time ΔT2 is equivalent to the time required for the electron e2 to move from the end point of the electron cloud R3 to the electron detector 30. Time ΔT1 is the difference between time t0 and time t1. Time ΔT1 is equivalent to the time required for the electron e1 to move from the starting point of the electron cloud R3 to the electron detector 30.

[0137] The longer the distance from the electron cloud R3 to the electron detector 30, the longer the time required for the electrons to move to the electron detector 30. The time required for the electrons to move is the longest when the electrons are generated on the drift electrode 40. The time required to move the electrons from the drift electrode 40 to the electron detector 30 is also referred to as the maximum movement time TMAX. The maximum movement time TMAX is determined based on the interval (also referred to as the drift length) between the drift electrode 40 and the electron detector 30 and the drift velocity V of the electrons. The drift velocity V is determined based on the intensity of the electric field, the type of gas in the container 20, the pressure of the gas, and the like. For example, under the following conditions 1 and 2, the maximum movement time TMAX is 10.24 μs.

[0138] (Condition 1)

[0139] Drift length: 40cm, electric field strength: 400V / cm,

[0140] Gas type: A mixture of argon and ethane. Gas pressure: 1 atmosphere

[0141] (Condition 2)

[0142] Drift length: 60cm, electric field strength: 600V / cm,

[0143] Gas type: tetrafluoromethane, gas pressure: 3 atmospheres

[0144] The maximum movement time TMAX is, for example, 3 μs or more, 5 μs or more, or 7 μs or more. The maximum movement time TMAX is, for example, 30 μs or less, 20 μs or less, or 15 μs or less.

[0145] The maximum movement time TMAX can also be measured using a device including the electron detector 30 and the drift electrode 40 . Fig. 22 : is a diagram showing the structure of an apparatus for measuring the maximum moving time TMAX. The apparatus includes a container 20, an electron detector 30 and a drift electrode 40 located inside the container 20, and a radiation source 80 located on the outer surface of the first part 21 of the container 20. The electron detector 30 and the drift electrode 40 are opposed to each other in the first direction D1 with a gap H therebetween. The radiation source 80 is a source for generating radiation. For example, the radiation source 80 is a radiation standard gamma ray source (nuclide: Ba-1133, code number: BA402) of the Japan Radioisotope Association. When Compton scattering occurs inside the container 20 due to the radiation from the radiation source 80, recoil electrons are generated, forming an electron cloud R3.

[0146] Fig.23 It is a graph showing the number of electrons detected by the electron detector 30 of the device of FIG. 28 . Fig.23 The horizontal axis of the graph represents time. Fig.23 The vertical axis of the graph of FIG. 29 represents the number of electrons. The multiple points in the graph of FIG. 29 represent the number of electrons detected at a given sampling frequency. The sampling frequency is, for example, 50 MHz or less. The sampling frequency may also be 10 MHz or more and 20 MHz or less.

[0147] like Fig.23 As shown, the graph includes a period when the number of electrons is large and approximately constant. This period corresponds to the maximum movement time TMAX. The maximum movement time TMAX is calculated by determining the period when the number of electrons is large and approximately constant. The drift velocity V of the electrons is calculated by H / TMAX.

[0148] Next, a circuit for digitizing the analog signal of the radiation detector 50 and the analog signal of the electron detector 30 to generate data will be described. Figure 8 It is a diagram showing an example of a circuit.

[0149] The detection device 10 includes at least a first readout circuit 150 and a second readout circuit 130. The first readout circuit 150 and the second readout circuit 130 can communicate with a computer 110. The computer 110 receives digital data sent by the first readout circuit 150 and the second readout circuit 130, and processes the digital data. For example, the computer 110 calculates the incident direction of radiation to the container 20 based on the first final data and the second final data described later. In the case where the size of the detection device 10 can be ignored compared to the distance from the radiation source emitting radiation to the detection device 10, such as a celestial body, one incident direction is determined for one radiation source. In this case, the positional relationship of the radiation source corresponding to the incident direction of the radiation is imaged. On the other hand, in the case where the size of the detection device 10 cannot be ignored compared to the distance from the radiation source emitting radiation to the detection device 10, such as SPECT / PET and BNCT, multiple scattering points are detected for one radiation source, and the incident direction is determined based on each scattering point. In this case, the position where the incident direction determined at each scattering point converges is determined as the position of the radiation source and is imaged. In this way, the combination of the detection device 10 and the computer 110 can function as a radiation determination device that calculates the incident direction of the radiation or images the position of the radiation source of the radiation. The computer 110 can also image the electron cloud generated in the container 20. In this case, the combination of the detection device 10 and the computer 110 can function as an electronic imaging device that images the electrons. The computer 110 can also be a general-purpose personal computer or a calculation processing module suitable for the detection device 10.

[0150] SPECT stands for Single Photon Emission CT. BNCT stands for Boron Neutron Capture Therapy. PET stands for Positron Emission Tomography.

[0151] The first readout circuit 150 digitizes the analog signal generated by the radiation detector 50 to generate the first data D10. The first data D10 is stored in a first buffer described later. In response to the input of the first trigger signal TS1, the first readout circuit 150 sends the first final data FD10 to the computer 110. The first final data FD10 includes the first data D10 stored in the first buffer.

[0152] The second readout circuit 130 digitizes the analog signal generated by the electron detector 30 to generate the second data D20. The second data D20 is stored in a second buffer described later. The second readout circuit 130 responds to the input of the second trigger signal TS2 and sends the second final data FD20 to the computer 110. The second final data FD20 includes the second data D20 stored in the second buffer.

[0153] like Figure 8 As shown, the detection device 10 may also include a logic circuit 120 connected to the second readout circuit 130. The logic circuit 120 generates a first trigger signal TS1 based on the second data D20 generated by the second readout circuit 130, for example. For example, the first trigger signal TS1 is generated in response to the generation of a second hit signal described later of the second data D20. The logic circuit 120 may also generate a second trigger signal TS2 based on the second data D20. For example, the second trigger signal TS2 is generated in response to the generation of the second hit signal. The logic circuit 120 may also be connected to both the first readout circuit 150 and the second readout circuit 130. In this case, the logic circuit 120 may also generate trigger signals such as the first trigger signal TS1 and the second trigger signal TS2 based on both the first data D10 and the second data D20.

[0154] Fig. 9 1 is a diagram showing an example of the second readout circuit 130 and the logic circuit 120. The second readout circuit 130 may include an anode readout circuit 131 and a cathode readout circuit 132.

[0155] The anode readout circuit 131 digitizes the anode analog signals generated by the plurality of anode electrodes 31, respectively. The digital data generated by the anode readout circuit 131 is also referred to as the 21st data D21. The 21st data D21 is a part of the 2nd data D20. The 21st data D21 may also include the 21st hit signal H21. "Hit signal" refers to a signal generated by binarizing an analog signal. When the intensity of the analog signal exceeds a threshold value, the hit signal indicates a high level (High) state. When the intensity of the analog signal is below a threshold value, the hit signal indicates a low level (Low) state. The 21st hit signal H21 is a signal generated by binarizing the anode analog signal. The anode readout circuit 131 may also send the 21st hit signal H21 to the logic circuit 120.

[0156] like Fig. 9As shown, the second readout circuit 130 may also include a plurality of anode readout circuits 131. The number of anode readout circuits 131 is determined according to the number of anode electrodes 31 of the electron detector 30. For example, when the number of anode electrodes 31 is 256 and the number of analog signals that can be processed by one anode readout circuit 131 is 128, the second readout circuit 130 includes two anode readout circuits 131.

[0157] The anode readout circuit 131 may also send the 21st final data FD21 to the computer 110 in response to the input of the second trigger signal TS2. The 21st final data FD21 includes the 21st data D21. The 21st final data FD21 is a part of the second final data FD20.

[0158] The cathode readout circuit 132 digitizes the cathode analog signals generated by the plurality of cathode electrodes 32. The digital data generated by the cathode readout circuit 132 is also referred to as 22nd data D22. The 22nd data D22 is a part of the second data D20. The 22nd data D22 may also include a 22nd hit signal H22. The 22nd hit signal H22 is a signal generated by binarizing the cathode analog signal. The cathode electrode 32 may also send the 22nd hit signal H22 to the logic circuit 120.

[0159] like Fig. 9 As shown, the second readout circuit 130 may also include a plurality of cathode readout circuits 132. The number of cathode readout circuits 132 is determined according to the number of cathode electrodes 32 of the electron detector 30. For example, when the number of cathode electrodes 32 is 256 and the number of analog signals that can be processed by one cathode readout circuit 132 is 128, the second readout circuit 130 includes two cathode readout circuits 132.

[0160] The cathode readout circuit 132 may also send the 22nd final data FD22 to the computer 110 in response to the input of the second trigger signal TS2. The 22nd final data FD22 includes the 22nd data D22. The 22nd final data FD22 is a part of the second final data FD20.

[0161] The anode readout circuit 131 will be described in detail. Fig.10 1 is a diagram showing an example of the configuration of the anode readout circuit 131 .

[0162] The anode readout circuit 131 may also include a plurality of amplifiers 1361. Each amplifier 1361 amplifies a corresponding anode analog signal AS. The anode readout circuit 131 may also include a plurality of comparators 1362. Each comparator 1362 may also binarize the anode analog signal AS amplified by the corresponding amplifier 1361 to generate a 21st hit signal h21. The anode readout circuit 131 may also include an amplifier 1363. The amplifier 1363 adds the plurality of anode analog signals AS amplified by the plurality of amplifiers 1361. The intensity of the analog signal output from the amplifier 1363 represents the intensity of the electrons detected by the anode electrode 31. For example, the waveform of the analog signal output from the amplifier 1363 represents the waveform of the electrons detected by the anode electrode 31. The plurality of amplifiers 1361, the plurality of comparators 1362, and the amplifier 1363 may also be formed by the first integrated circuit 136. The first integrated circuit 136 is, for example, an ASIC.

[0163] The anode readout circuit 131 may also include an AD converter 137. The AD converter 137 digitizes the analog signal output from the amplifier 1363. The data digitized by the AD converter 137 is also referred to as the 21st intensity data W21. The 21st intensity data W21 is a part of the 21st data D21. The AD converter 137 may also be a flash memory type AD converter. In this case, the analog signal is digitized at high speed. The sampling rate of the AD converter 137 is, for example, above 1 MHz, or above 5 MHz, or above 10 MHz. The sampling rate of the AD converter 137 is, for example, below 50 MHz, or below 30 MHz, or below 20 MHz. By setting the sampling rate to be lower, the amount of data generated by the AD converter 137 can be reduced. As a result, the load on the computer 110 can be reduced.

[0164] The anode readout circuit 131 may include a 21st buffer 1381 and a 22nd buffer 1382. The buffers included in the second readout circuit 130, such as the 21st buffer 1381 and the 22nd buffer 1382, are also referred to as second buffers.

[0165] The 21st buffer 1381 and the 22nd buffer 1382 are, for example, ring buffers. The 21st buffer 1381 and the 22nd buffer 1382 store the 21st data D21 in themselves during the second storage period. The 21st buffer 1381 can temporarily store the 21st hit signal h21. The 21st buffer 1381 can temporarily store the 21st hit signal H21 obtained by processing a plurality of 21st hit signals h21 by an OR circuit. When at least one of the plurality of anode analog signals input to the anode readout circuit 131 is in a high level state, the 21st hit signal H21 indicates a high level state. The 22nd buffer 1382 can also temporarily store the 21st intensity data W21. The second storage period can also be less than the above-mentioned maximum movement time TMAX.

[0166] The anode readout circuit 131 may also output the 21st hit signal H21 to the logic circuit 120. The anode readout circuit 131 may output the 21st hit signal H21 previously stored in the 21st buffer 1381 to the logic circuit 120.

[0167] When the second trigger signal TS2 is input to the anode readout circuit 131, the 21st data D21 stored in the 21st buffer 1381 and the 22nd buffer 1382 is output from the 21st buffer 1381 and the 22nd buffer 1382. The anode readout circuit 131 may also include a second data processing unit 1383 that processes the output 21st data D21. The second data processing unit 1383 generates 21st final data FD21 to be sent to the computer 110.

[0168] The 21st final data at least partially includes information of the 21st data D21. For example, the 21st final data FD21 may also include information of the 21st hit signal H21. For example, the 21st final data D21 may also include the 21st intensity data W21. The form of the information of the 21st data D21 included in the 21st final data FD21 may be the same as or different from the form of the 21st data D21.

[0169] The 21st final data FD21 may also include information related to the time when the 21st data D21 is stored in the 21st buffer 1381 and the 22nd buffer 1382. The 21st final data FD21 may also include information related to the position of the anode electrode 31 at which the electrons are detected. In other words, the 21st final data FD21 may also include information related to the arrival position of the electrons on the electron detector 30.

[0170] The 21st buffer 1381, the 22nd buffer 1382, and the second data processing unit 1383 may be formed by the second integrated circuit 138. The second integrated circuit 138 is, for example, an FPGA.

[0171] The positive electrode readout circuit 131 may output the data collection signal DA21 to the logic circuit 120. The data collection signal DA21 is a signal that becomes a high level state when writing to the 21st buffer 1381 and the 22nd buffer 1382 is performed.

[0172] The structure of the cathode readout circuit 132 may be the same as that of the anode readout circuit 131 .

[0173] Next, refer to Fig. 9 , the logic circuit 120 is described.

[0174] When the second readout circuit 130 includes a plurality of anode readout circuits 131, Fig. 9 As shown, the logic circuit 120 may also include an OR circuit 121. The 21st hit signal H21 from each anode readout circuit 131 is input to the OR circuit 121. The OR circuit 121 processes a plurality of 21st hit signals H21 and outputs a 23rd hit signal H23. When at least one of the plurality of 21st hit signals H21 is in a high level state, the 23rd hit signal H23 indicates a high level state. That is, when at least one of the plurality of anode analog signals generated by the plurality of anode electrodes 31 exceeds a threshold value, the 23rd hit signal H23 indicates a high level state. When all of the plurality of 21st hit signals H21 are in a low level state, the 23rd hit signal H23 indicates a low level state. That is, when all of the plurality of anode analog signals generated by the plurality of anode electrodes 31 are below a threshold value, the 23rd hit signal H23 indicates a low level state. Such a 23rd hit signal H23 is also referred to as an anode hit signal.

[0175] When the second readout circuit 130 includes a plurality of cathode readout circuits 132, as shown in FIG. Fig. 9As shown, the logic circuit 120 may also include an OR circuit 122. The 22nd hit signal H22 from each cathode readout circuit 132 is input to the OR circuit 121. The 22nd hit signal H22, like the 21st hit signal H21, indicates a high level state when at least one of the plurality of cathode analog signals input to the cathode readout circuit 132 is in a high level state. The OR circuit 122 processes the plurality of 22nd hit signals H22 and outputs a 24th hit signal H24. The 24th hit signal H24 indicates a high level state when at least one of the plurality of 22nd hit signals H22 is in a high level state. That is, the 24th hit signal H24 indicates a high level state when at least one of the plurality of cathode analog signals generated by the plurality of cathode electrodes 32 exceeds a threshold value. The 24th hit signal H24 indicates a low level state when all of the plurality of 22nd hit signals H22 are in a low level state. That is, the 24th hit signal H24 indicates a low-level state when all of the plurality of cathode analog signals generated by the plurality of cathode electrodes 32 are below the threshold value. Such a 24th hit signal H24 is also referred to as a cathode hit signal.

[0176] When the second readout circuit 130 includes the anode readout circuit 131 and the cathode readout circuit 132, as shown in FIG. Fig. 9 As shown, the logic circuit 120 may also include an AND circuit 123. The 23rd hit signal H23 and the 24th hit signal H24 are input to the AND circuit 123. The AND circuit 123 processes the 23rd hit signal H23 and the 24th hit signal H24 to generate a second hit signal H20. When at least one of the multiple anode analog signals from the electron detector 30 exceeds the threshold value, and at least one of the multiple cathode analog signals from the electron detector 30 exceeds the threshold value, the second hit signal H20 indicates a high level state. When all of the multiple anode analog signals are below the threshold value, or when all of the multiple cathode analog signals are below the threshold value, the second hit signal H20 indicates a low level state.

[0177] like Fig. 9 As shown, the logic circuit 120 may also include a processing circuit 124 to which the second hit signal H20 is input. When the second hit signal H20 is input, the processing circuit 124 generates the first trigger signal TS1. The processing circuit 124 may also generate the first trigger signal TS1 immediately after the second hit signal H20 is input. Alternatively, the processing circuit 124 may also generate the first trigger signal TS1 after the first delay time DT1 has passed after the second hit signal H20 is input. The first delay time DT1 may also be less than the above-mentioned maximum movement time TMAX.

[0178] The processing circuit 124 may also generate the second trigger signal TS2 after the second delay time DT2 has passed since the second hit signal H20 was input. The second delay time DT2 may also be less than the maximum moving time TMAX described above. Thus, it is possible to suppress the generation of the second trigger signal TS2 before the electrons generated at a position far from the electron detector 30 reach the electron detector 30.

[0179] Next, the first readout circuit 150 will be described in detail. Fig.11 1 is a diagram showing an example of the configuration of the first readout circuit 150. A plurality of analog signals ES generated by a plurality of detection elements 51 of the radiation detector 50 are input to the first readout circuit 150. The first readout circuit 150 digitizes the plurality of analog signals ES to generate first data D10.

[0180] The first readout circuit 150 may also include a plurality of amplifiers for amplifying the plurality of analog signals ES, similarly to the anode readout circuit 131. The first readout circuit 150 may also include a plurality of comparators for binarizing the plurality of analog signals ES and generating a plurality of hit signals, similarly to the anode readout circuit 131. The first readout circuit 150 may also generate the first hit signal H10 by processing the plurality of hit signals using an OR circuit. The first readout circuit 150 may also output the first hit signal H10 to the logic circuit 120. The first hit signal H10 is a part of the first data D10. When at least one of the plurality of analog signals generated by the plurality of detection elements 51 exceeds a threshold value, the first hit signal H10 indicates a high level state. When all of the plurality of analog signals generated by the plurality of detection elements 51 are below a threshold value, the first hit signal H10 indicates a low level state.

[0181] The first readout circuit 150 may include an AD converter similarly to the anode readout circuit 131. The AD converter may digitize an analog signal obtained by adding a plurality of analog signals ES. The data digitized by the AD converter is also referred to as first intensity data.

[0182] The first readout circuit 150 may also include a first buffer 1561. The first buffer 1561 is, for example, a ring buffer. The first buffer 1561 stores the first data D10 in itself during the first storage period. The first storage period may also be less than the above-mentioned maximum movement time TMAX. When the first trigger signal TS1 is generated after the first delay time DT1 has passed since the second hit signal H20 was input, the first storage period may also be longer than the maximum movement time TMAX. The first storage period may also be shorter than the sum of the first delay time DT1 and the maximum movement time TMAX.

[0183] When the first trigger signal TS1 is input to the first readout circuit 150, the first data D10 stored in the first buffer 1561 is output from the first buffer 1561. The first readout circuit 150 may also include a first data processing unit 1562 that processes the output first data D10. The first data processing unit 1562 generates first final data FD1 to be sent to the computer 110.

[0184] The first final data FD1 at least partially includes information of the first data D10. For example, the first final data FD10 may also include information of the first hit signal H10. For example, the first final data D10 may also include first intensity data. The information of the first data D10 included in the first final data FD10 may be in the same form as or different from the form of the first data D10.

[0185] The first final data FD10 may include information about the time when the first data D10 is stored in the first buffer 1561. The first final data FD10 may include information about the position of the detection element 51 that detects the radiation. In other words, the first final data FD10 may include information about the arrival position of the radiation on the radiation detector 50.

[0186] The first buffer 1561, the first data processing unit 1562, and the like may be formed by the integrated circuit 156. The integrated circuit 156 is, for example, an FPGA.

[0187] The first readout circuit 150 may output the data collection signal DA10 to the logic circuit 120. The data collection signal DA10 is a signal that becomes a high level state when writing is performed in the first buffer 1561.

[0188] Next, refer to Fig. 9 , the logic circuit 120 is described. Fig. 9 As shown, the VETO signal VS may be input to the processing circuit 124. The VETO signal VS is a signal that becomes a high level state when writing to the buffer is performed in the anode readout circuit 131, the cathode readout circuit 132, or the first readout circuit 150. When the VETO signal VS is input, the processing circuit 124 may stop the output of the trigger signals TS1 and TS2. That is, the processing circuit 124 may also make the trigger signals TS1 and TS2 become a low level state when the VETO signal VS becomes a high level state. Thus, it is possible to suppress the input of the trigger signal to the anode readout circuit 131, the cathode readout circuit 132, and the first readout circuit 150 during the period of writing to the buffer.

[0189] Next, an example of the operation of the detection device 10 will be described. Fig.12It is a diagram showing an example of signal processing in the detection device 10.

[0190] When Compton scattering of radiation occurs inside the container 20, recoil electrons and an electron cloud R3 are generated. When the scattered radiation R2 is detected by the radiation detector 50, the first readout circuit 150 generates first data D10. Fig.12 The first hit signal H10 of the first data D10 is shown. The first data D10 is stored in the first buffer during the first storage period BT1.

[0191] After the radiation R2 is detected by the radiation detector 50, the electrons of the electron cloud R3 reach the electron detector 30. When the electrons are detected by the anode electrode 31 and the cathode electrode 32, 21st data D21 and 22nd data D22 are generated. Fig.12 The anode hit signal of the 21st data D21 and the cathode hit signal of the 22nd data D22 are shown. The 21st data D21 and the 22nd data D22 are stored in the second buffer in the second storage period BT2.

[0192] When both the anode hit signal and the cathode hit signal are in a high level state, a second hit signal is generated. When the second hit signal is generated, a first trigger signal TS1 is generated. When the first trigger signal TS1 is input to the first readout circuit 150, the first readout circuit 150 sends the first final data FD10 including the first data D10 to the computer 110.

[0193] like Fig.12 As shown, after the second delay time DT2 has passed since the second hit signal was generated, the second trigger signal TS2 is generated. When the second trigger signal TS2 is input to the second readout circuit 130, the second readout circuit 130 sends the second final data FD20 including the second data D20 to the computer 110. The second final data FD20 includes the 21st final data FD21 and the 22nd final data FD22, wherein the 21st final data FD21 includes the 21st data D21, and the 22nd final data FD22 includes the 22nd data D22.

[0194] exist Fig.12 In FIG. 1 , regarding the first and fifth first data D10 from the left, the first trigger signal TS1 is generated while the first data D10 is stored in the first buffer. Therefore, the first and fifth first data D10 from the left are sent to the computer 110 . Fig.13 This is a diagram showing an example of the first final data FD10 and the second final data FD20 transmitted to the computer 110 .

[0195] On the other hand, regarding Fig.12In the second to fourth first data D10 from the left, the first trigger signal TS1 is not generated while the first data D10 is stored in the first buffer. Such a situation may occur when radiation that has not been scattered inside the container 20 reaches the radiation detector 50. Such a situation may also occur when radiation that has not passed through the container 20 reaches the radiation detector 50. The second to fourth first data D10 from the left are not sent to the computer 110 and are deleted.

[0196] Fig.14 is a diagram showing another example of signal processing. Fig.14 In the example shown, the first data D10 from the left is accompanied by the generation of the 21st data D21, but is not accompanied by the generation of the 22nd data D22. Therefore, the first trigger signal TS1 is not generated while the first data D10 is stored in the first buffer. Such a situation may occur when the energy of the electrons in the electron cloud R3 is low. When the energy of the electrons is low, it is difficult to accurately calculate the flight trajectory of the recoil electrons. Therefore, the usefulness of the first data D10 and the second data D20 when the energy of the electrons is low is low. The first data D10 from the left is not sent to the computer 110 and is deleted.

[0197] The computer 110 calculates information related to radiation and electrons based on the first final data FD10 and the second final data FD20. For example, the computer 110 can calculate the arrival position of the radiation R2, the energy of the radiation R2, the flight trajectory of the recoil electrons, the energy of the recoil electrons, the position of the scattering point P, etc. The computer 110 can also calculate the incident direction of the radiation incident on the container 20 based on this information. The computer 110 can also image the position of the radiation source of the radiation incident on the container 20.

[0198] According to the present embodiment, the first data D10 related to the radiation that is not appropriately generated by the electrons inside the container 20 is not sent to the computer 110 but is deleted. Therefore, the amount of the first data D10 sent to the computer 110 can be reduced. Thus, the load on the computer 110 can be reduced. For example, the load required for the calculation processing and image processing of the first data D10 is reduced. For example, the load required for the communication of the first data D10 is reduced. Thus, the computer 110 can process data with high usefulness preferentially. Therefore, for example, compared with the conventional computer 110, the incident direction of the radiation incident on the container 20 can be calculated more quickly. Thus, for example, when the detection device 10 detects the radiation radiated from the radioactive drug in the patient's body, the degree of exposure to the patient can be reduced.

[0199] Various changes can be made to the above-mentioned embodiments. Hereinafter, the modified examples will be described with reference to the accompanying drawings as needed. In the following description and the accompanying drawings used in the following description, for parts that can be constructed in the same manner as the above-mentioned embodiments, the same symbols as those used for the corresponding parts in the first embodiment are used, and repeated descriptions are omitted. In addition, when the effects obtained in the above-mentioned embodiments can also be obtained in the modified examples, their descriptions are sometimes omitted.

[0200] (First Modification)

[0201] Fig.15 1 is a diagram showing an example of signal processing in the first variant. Fig.15 As shown, the first trigger signal TS1 and the second trigger signal TS2 may be generated simultaneously according to the second hit signal. For example, the first delay time DT1 may be the same as the second delay time DT2.

[0202] Even in Fig.15 In the example shown, when the first trigger signal TS1 is generated while the first data D10 is stored in the first buffer, the first final data FD10 is also transmitted to the computer 110 .

[0203] (Second modification)

[0204] Fig.16 1 is a diagram showing the second readout circuit 130 and the logic circuit 120 in the second modification. Fig.16 As shown, the anode hit signal H23 and the cathode hit signal H24 can be input to the OR circuit 125. The OR circuit 125 processes the 23rd hit signal H23 and the 24th hit signal H24 to generate the second hit signal H20. When at least one of the multiple anode analog signals from the electronic detector 30 exceeds the threshold, or at least one of the multiple cathode analog signals from the electronic detector 30 exceeds the threshold, the second hit signal H20 indicates a high level state. When the multiple anode analog signals are all below the threshold and the multiple cathode analog signals are all below the threshold, the second hit signal H20 indicates a low level state. When the second hit signal H20 is input, the processing circuit 124 generates the first trigger signal TS1.

[0205] Fig.17 1 is a diagram showing an example of signal processing in the second modification. When electrons are detected by the anode electrode 31 or the cathode electrode 32, second data D20 is generated. Fig.17 The second hit signal of the second data D20 is shown.

[0206] When the second hit signal is generated, the first trigger signal TS1 is generated. When the first trigger signal TS1 is input to the first readout circuit 150 , the first readout circuit 150 transmits the first final data FD10 including the first data D10 to the computer 110 .

[0207] The second trigger signal TS2 is generated after the second delay time DT2 has passed since the second hit signal was generated. When the second trigger signal TS2 is input to the second readout circuit 130 , the second readout circuit 130 transmits the second final data FD20 including the second data D20 to the computer 110 .

[0208] In this modification, the first data D10 related to the radiation that is not associated with the generation of electrons inside the container 20 is not sent to the computer 110 and is deleted. Therefore, the amount of the first data D10 sent to the computer 110 can be reduced. As a result, the load on the computer 110 can be reduced. For example, the load required for calculation processing, image processing, etc. of the first data D10 is reduced.

[0209] (Third Modification)

[0210] Fig.18 3 is a perspective view showing the electron detector 30 in the third modified example. Fig.18 As shown in FIG. 1 , the electron detector 30 includes a plurality of anode electrodes 31 arranged in the second direction D2 and the third direction D3 . The electron detector 30 may include a cathode electrode facing the plurality of anode electrodes 31 .

[0211] Fig.19 1 is a diagram showing an example of the second readout circuit 130 and the logic circuit 120 in the third variant. The second readout circuit 130 includes an anode readout circuit 131, but does not include a cathode readout circuit. In this case, the OR circuit 121 can also generate a second hit signal H20. When at least one of the multiple anode analog signals from the electron detector 30 exceeds the threshold, the second hit signal H20 indicates a high level state. When all of the multiple anode analog signals are below the threshold, the second hit signal H20 indicates a low level state.

[0212] An example of signal processing in the third variant Fig.17 The first data D10 related to the radiation that is not associated with the generation of electrons inside the container 20 is not sent to the computer 110 and is deleted. Therefore, the amount of the first data D10 sent to the computer 110 can be reduced. As a result, the load on the computer 110 can be reduced. For example, the load required for the calculation processing and image processing of the first data D10 can be reduced.

[0213] (Fourth Modification)

[0214] In the present modification, the first trigger signal TS1 and the second trigger signal TS2 are generated based on both the first hit signal and the second hit signal. Fig. 20 1 is a diagram showing the first readout circuit 150 , the second readout circuit 130 , and the logic circuit 120 in the fourth modification.

[0215] like Fig. 20 As shown, the detection device 10 may include a plurality of first readout circuits 150. The number of the first readout circuits 150 is determined according to the number of detection elements 51 of the radiation detector 50. For example, when the number of detection elements 51 is 64 and the number of analog signals that can be processed by one first readout circuit 150 is 32, the detection device 10 includes two first readout circuits 150.

[0216] The first readout circuit 150 may send the 11th final data FD11 to the computer 110 in response to the input of the first trigger signal TS1. The 11th final data FD11 is a part of the first final data FD10. The 11th final data FD11 may also include an 11th hit signal H11. When at least one of the plurality of analog signals input to the first readout circuit 150 is in a high level state, the 11th hit signal H11 indicates a high level state.

[0217] like Fig. 20 As shown, a plurality of eleventh hit signals H11 may be input to the OR circuit 126. The OR circuit 126 outputs the first hit signal H10.

[0218] The logic circuit 120 may also include a processing circuit 127 to which the first hit signal H10 is input. The processing circuit 127 outputs a sustain signal H12. The sustain signal H12 indicates a high level state during a first sustain period after the first hit signal H10 is generated. The first sustain period is a period for waiting for electrons generated at a position away from the electron detector 30 to reach the electron detector 30. The first sustain period may also be less than the above-mentioned maximum movement time TMAX.

[0219] The logic circuit 120 may also include a processing circuit 128 to which the 23rd hit signal H23, the 24th hit signal H24, and the maintenance signal H12 are input. The processing circuit 128 generates a second hit signal based on the 23rd hit signal H23 and the 24th hit signal H24. For example, similar to the AND circuit 123, when both the anode hit signal H23 and the cathode hit signal H24 are in a high-level state, the processing circuit 128 may generate the second hit signal. Alternatively, similar to the OR circuit 125 of the second variation, the processing circuit 128 may generate the second hit signal when either the anode hit signal H23 or the cathode hit signal H24 is in a high-level state. When the processing circuit 128 generates the second hit signal, the maintenance signal H12 is in a high-level state.

[0220] According to the combination of the processing circuit 127 and the processing circuit 128 , when the second hit signal is generated within the first sustain period after the first hit signal H10 is generated, the hit signal H can be generated. The hit signal H is input to the processing circuit 124 .

[0221] When the hit signal H is input, the processing circuit 124 generates the first trigger signal TS1. The processing circuit 124 may also generate the first trigger signal TS1 immediately when the hit signal H is input. Alternatively, the processing circuit 124 may generate the first trigger signal TS1 after the first delay time DT1 has passed since the hit signal H was input. The processing circuit 124 may also generate the second trigger signal TS2 after the second delay time DT2 has passed since the hit signal H was input.

[0222] Fig.21 1 is a diagram showing an example of signal processing in the fourth modification. When the scattered radiation R2 is detected by the radiation detector 50 , the first readout circuit 150 generates the first data D10 . Fig.21 The first hit signal H10 indicates the first data D10. After the first hit signal H10 is generated, the sustain signal H12 indicates a high level state in the first sustain period KT1.

[0223] If the second hit signal is generated in the first sustain period KT1, the first trigger signal TS1 and the second trigger signal TS2 are generated. Fig.21 In the example shown, regarding the fourth first data D10 from the left, the 21st data D21 and the 22nd data D22 are generated within the first sustaining period KT1, and a second hit signal is generated. Therefore, the fourth first data D10 from the left is sent to the computer 110. In addition, the second 21st data D21 and the 22nd data D22 from the left, which are generated along with the fourth first data D10 from the left, are also sent to the computer 110.

[0224] On the other hand, regarding the 21st data D21 and the 22nd data D22 from the left, the corresponding 1st data D10 is not generated. Therefore, the 2nd trigger signal TS2 is not generated. Such a situation may occur when the electrons not caused by Compton scattering are detected by the electron detector 30. The 21st data D21 and the 22nd data D22 from the left are not sent to the computer 110 and are deleted.

[0225] According to this modification, the second data D20 such as the 21st data D21 and the 22nd data D22 related to the electrons not caused by Compton scattering are not sent to the computer 110 but are deleted. Therefore, the amount of the second data D20 sent to the computer 110 can be reduced. Thus, the load of the computer 110 can be reduced. For example, the load required for the calculation processing, image processing, etc. of the second data D20 is reduced. For example, the load required for the communication of the second data D20 is reduced. Thus, the computer 110 can process data with high usefulness preferentially. Therefore, for example, compared with the previous computer 110, the incident direction of the radiation incident on the container 20 can be calculated more quickly. Thus, for example, when the detection device 10 detects the radiation radiated from the radioactive agent in the patient's body, the degree of radiation exposure to the patient can be reduced.

[0226] (Fifth Modification)

[0227] In the above-mentioned implementation mode, if Figure 7 As shown in FIG. 1 , a calculation method is described assuming that the analog signal of the radiation detector 50 is generated at time t0. Fig.24 As shown, an example of generating an analog signal of the radiation detector 50 after a time ΔT3 has passed from time t0 is described. The time ΔT3 may also be the difference between the time when the first hit signal H10 rises and time t0. The first hit signal H10 is obtained by digitizing the analog signal of the radiation detector 50. The time ΔT3 is also called a detection delay time.

[0228] Fig.24 ΔT4 represents the time from when the radiation detector 50 detects radiation to when the electron detector 30 detects electrons. The time ΔT4 may be the difference between the time when the first hit signal H10 rises and the time when the second hit signal H20 rises.

[0229] Time ΔT2 is calculated by adding time ΔT3 to time ΔT4. Time ΔT2 is equivalent to the time required for electron e2 to move from the end point of electron cloud R3 to electron detector 30. Time ΔT1 is also calculated taking time ΔT3 into consideration. Time ΔT1 is equivalent to the time required for electron e1 to move from the starting point of electron cloud R3 to electron detector 30. Computer 110 may also consider time ΔT2 and time ΔT1 to determine the position of the electron cloud. For example, computer 110 may also consider time ΔT2 and time ΔT1 to determine the coordinates of electron e1 and electron e2 in the first direction D1. For example, computer 110 may also consider time ΔT2 and time ΔT1 to image the electron cloud.

[0230] The time ΔT3 is generated depending on the radiation detector 50. For example, the time ΔT3 in the radiation detector 50 including the semiconductor detection element may be longer than the time ΔT3 in the radiation detector 50 including the scintillator.

[0231] The computer 110 may also acquire information related to the time ΔT3 from the radiation detector 50. For example, the radiation detector 50 may send a digitized signal including information about the time ΔT3 to the computer 110. The computer 110 may also calculate information related to the time ΔT3 from the analog signal of the radiation detector 50.

[0232] In the case where the radiation detector 50 includes a semiconductor detection element, there may be a certain correlation between the time ΔT3 and the intensity of the analog signal. The semiconductor detection element includes a cathode electrode and an anode electrode. After the radiation R2 passes through the cathode electrode, electrons are generated at a position between the cathode electrode and the anode electrode. In the case where the energy of the radiation R2 is small, electrons are generated at a position far away from the anode electrode. In this case, the moving distance of the electrons before reaching the anode electrode is long, so the time ΔT3 becomes longer. In addition, the energy of the radiation R2 is small, so the intensity of the analog signal also becomes smaller. On the other hand, in the case where the energy of the radiation R2 is large, electrons are generated at a position close to the anode electrode. In this case, the moving distance of the electrons before reaching the anode electrode is short, so the time ΔT3 becomes smaller. In addition, the energy of the radiation R2 is large, so the intensity of the analog signal also becomes larger. Time ΔT3 can be calculated based on the intensity of the analog signal.

[0233] (Sixth Modification)

[0234] In the above-mentioned embodiment, an example is shown in which the first trigger signal TS1 is generated starting from the signal from the electron detector 30. Fig.12 , Fig.14 , Fig.17 , Fig.21, an example of generating the first trigger signal TS1 when generating the second hit signal is shown. Fig.15 , an example is shown in which the first trigger signal TS1 is generated after the first delay time DT1 has elapsed since the second hit signal was generated. In this modification, an example in which the first trigger signal TS1 is generated starting from a signal from the radiation detector 40 will be described.

[0235] Fig.25 1 is a diagram showing signal processing in the sixth modification. The first trigger signal TS1 may be generated after the first hit signal H10 of the first data is generated and after the first delay time DT1 has passed.

[0236] The first delay time DT1 may be the same as the maximum travel time TMAX. The first delay time DT1 may be substantially the same as the maximum travel time TMAX. “Substantially the same” means that the first delay time DT1 is greater than 0.90 times and less than 1.00 times the maximum travel time TMAX. The first delay time DT1 may be greater than 0.45 times and less than 1.00 times the maximum travel time TMAX.

[0237] The first trigger signal TS1 may be generated only when it is confirmed that the second hit H20 is generated during the first delay time DT1 after the first delay time DT1 has passed since the first hit signal H10 was generated. In other words, when the second hit H20 is not generated during the first delay time DT1, the first trigger signal TS1 may not be generated after the first delay time DT1 has passed since the first hit signal H10 was generated.

[0238] like Fig.25 As shown, the second trigger signal TS2 may be generated after the first delay time DT1 has passed after the first hit signal H10 is generated. The second trigger signal TS2 may also be generated only when it is confirmed that the second hit H20 is generated during the first delay time DT1 after the first delay time DT1 has passed since the first hit signal H10 was generated. In other words, when the second hit H20 is not generated during the first delay time DT1, the second trigger signal TS2 may not be generated after the first delay time DT1 has passed since the first hit signal H10 was generated.

[0239] Fig.26 1 is a diagram showing an example of a method for calculating the time ΔT2. After the first trigger signal TS1 is generated, the time ΔT5 is calculated. The time ΔT5 is the difference between the time when the second hit H20 rises and the time when the first trigger signal TS rises. The time ΔT2 is calculated by subtracting the time ΔT5 from the sum of the time ΔT3 and the first delay time DT1.

[0240] (Replenish)

[0241] As in the above-mentioned embodiments and various variations, "generating a hit signal" may also mean "setting the hit signal to a high level state". Similarly, "generating a trigger signal" may also mean "setting the trigger signal to a high level state". In addition, in a case where the circuit of the detection device 10 performs a certain action by inputting a signal in a low level state, "generating a signal for generating a hit signal" may also mean "setting the hit signal to a low level state". Similarly, "generating a signal for generating a trigger signal" may also mean "setting the trigger signal to a low level state".

[0242] Although several modified examples of the above-mentioned embodiment have been described, it is of course possible to appropriately combine a plurality of modified examples and apply them to the above-mentioned embodiment.

[0243] -Explanation of symbols-

[0244] 5 Objects

[0245] 10. Detection device

[0246] 20 Containers

[0247] 30 Electronic detector

[0248] 31 Anode electrode

[0249] 32 Cathode electrode

[0250] 35 Substrate

[0251] 40 Drift Electrode

[0252] 45 Drift Cage

[0253] 50 Radiation Detector

[0254] 51 Detection element

[0255] 52 Circuit board

[0256] 60 Electronic Amplifier

[0257] 70 Auxiliary drift electrode

[0258] 110 Computer

[0259] 120 Logic Circuits

[0260] 130 Second readout circuit

[0261] 131 Anode readout circuit

[0262] 132 Cathode readout circuit

[0263] 136 1st Integrated Circuit

[0264] 137 AD Converter

[0265] 138 2nd IC

[0266] 1381 21st Buffer

[0267] 1382 22nd Buffer

[0268] 1383 Second Data Processing Department

[0269] 150 1st readout circuit

[0270] 156 Integrated Circuits

[0271] 1561 1st Buffer

[0272] 1562 1st Data Processing Unit.

Claims

1. A detection device for detecting radiation, the detection device comprising: A container containing a gas; an electron detector, located inside the container, for detecting electrons generated by Compton scattering and generating an analog signal; a drift electrode, disposed opposite to the electronic detector; a radiation detector that detects radiation scattered by the Compton scattering and generates an analog signal; a first readout circuit that digitizes the analog signal generated by the radiation detector to generate first data and stores the first data in a first buffer; as well as a second readout circuit that digitizes the analog signal generated by the electron detector to generate second data, The first readout circuit transmits first final data to an external computer in response to a first trigger signal, the first final data including the first data stored in the first buffer.

2. The detection device according to claim 1, wherein: The first final data includes information related to a time when the first data is stored in the first buffer.

3. The detection device according to claim 2, wherein: The radiation detector includes a plurality of detection elements. The first final data includes information on an arrival position of radiation on the radiation detector.

4. The detection device according to claim 3, wherein: The first final data includes information related to the intensity of the analog signal generated by the radiation detector.

5. The detection device according to claim 1, wherein: The first buffer of the first readout circuit stores the first data during a first storage period. The first storage period is less than the maximum moving time, The maximum movement time is the time required for electrons to move from the drift electrode to the electron detector.

6. The detection device according to claim 5, wherein: The maximum movement time is less than 10.24 μs.

7. The detection device according to any one of claims 1 to 6, wherein: The first trigger signal is generated in response to generation of the second data.

8. The detection device according to claim 7, wherein: The detection device includes a logic circuit connected to the first readout circuit and the second readout circuit. The second readout circuit generates a second hit signal when the intensity of the analog signal of the electronic detector exceeds a threshold value. The logic circuit generates the first trigger signal in response to generation of the second hit signal.

9. The detection device according to claim 8, wherein: The second readout circuit includes a second buffer for storing the second data. The logic circuit generates a second trigger signal in response to the generation of the second hit signal, The second readout circuit transmits second final data to the computer in response to a second trigger signal, the second final data including the second data stored in the second buffer.

10. The detection device according to claim 9, wherein: The logic circuit generates the first trigger signal and the second trigger signal simultaneously.

11. The detection device according to claim 9, wherein: The logic circuit generates the second trigger signal after a second delay time has elapsed since the electron detector generates the second hit signal.

12. The detection device according to claim 11, wherein: The second delay time is less than the maximum moving time, The maximum movement time is the time required for electrons to move from the drift electrode to the electron detector.

13. The detection device according to claim 11, wherein: The second buffer of the second read circuit stores the second data during a second storage period. The second storage period is longer than the second delay time.

14. The detection device according to claim 9, wherein: The electron detector includes a plurality of anode electrodes and a plurality of cathode electrodes. The analog signal of the electron detector includes an anode analog signal generated by the plurality of anode electrodes and a cathode analog signal generated by the plurality of cathode electrodes, The second readout circuit generates an anode hit signal when the intensity of the anode analog signal exceeds a threshold value, and generates a cathode hit signal when the intensity of the cathode analog signal exceeds a threshold value. The logic circuit generates the second trigger signal in response to generation of both the anode hit signal and the cathode hit signal.

15. The detection device according to claim 9, wherein: The second final data includes information related to the intensity of the analog signal generated by the electronic detector.

16. The detection device according to claim 15, wherein: The second readout circuit acquires information related to the intensity of the analog signal generated by the electron detector at a sampling frequency of 50 MHz or less.

17. The detection device according to claim 15, wherein: The second readout circuit acquires information related to the intensity of the analog signal generated by the electron detector at a sampling frequency of 10 MHz to 20 MHz.

18. The detection device according to claim 8, wherein: The first readout circuit generates a first hit signal when the intensity of the analog signal of the radiation detector exceeds a threshold value. The logic circuit generates the first trigger signal when the second hit signal is generated within a first sustaining period starting from the generation of the first hit signal.

19. The detection device according to claim 18, wherein: The first maintenance period is less than the maximum movement time, The maximum movement time is the time required for electrons to move from the drift electrode to the electron detector.

20. The detection device according to claim 9, wherein: The first readout circuit generates a first hit signal when the intensity of the analog signal of the radiation detector exceeds a threshold value. The logic circuit generates the first trigger signal and the second trigger signal when the second hit signal is generated within a first sustaining period from the generation of the first hit signal.

21. The detection device according to any one of claims 1 to 6, wherein: The first readout circuit generates a first hit signal when the intensity of the analog signal of the radiation detector exceeds a threshold value. The first trigger signal is generated after a first delay time has elapsed since the first hit signal was generated.

22. The detection device according to claim 21, wherein: The first delay time is greater than or equal to 0.45 times and less than or equal to 1.00 times the maximum movement time. The maximum movement time is the time required for electrons to move from the drift electrode to the electron detector.

23. The detection device according to claim 21, wherein: The second readout circuit generates a second hit signal when the intensity of the analog signal of the electronic detector exceeds a threshold value. The first trigger signal is generated when the second hit signal is generated within the first delay time.

24. The detection device according to any one of claims 1 to 6, wherein: The first readout circuit transmits information on a detection delay time in the radiation detector to the computer.

25. The detection device according to claim 24, wherein: The detection delay time is calculated based on the intensity of the analog signal generated by the electronic detector.

26. A radiation determination device comprising: The detection device according to claim 9; and A computer receives the first final data and the second final data sent by the detection device, The computer calculates an incident direction of radiation to the detection device based on the first final data and the second final data.

27. A radiation determination device comprising: The detection device according to claim 9; and A computer receives the first final data and the second final data sent by the detection device, The computer images the position of a radiation source that radiates radiation based on the first final data and the second final data.

28. A radiation determination device comprising: The detection device of claim 24; and a computer, receiving the first final data, the second final data and the information related to the detection delay time sent by the detection device, The computer determines the coordinates of the electrons generated by Compton scattering based on the first final data, the second final data, and the information related to the detection delay time.

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