Imaging device and electronic apparatus

Abstract

[Problem] To further improve the degree of isolation between a plurality of sub-pixels included in a pixel. [Solution] This imaging device is provided with: a semiconductor substrate that includes photoelectric conversion sections provided for two-dimensionally arranged pixels, respectively, and a pixel isolation section that separates the photoelectric conversion sections from each other; color filters and on-chip lenses respectively disposed for the pixels on one surface of the semiconductor substrate: inter-color filter isolation parts disposed between the color filters to include a low refractive index material having a refractive index lower than that of the color filters, and to isolate the color filters by pixels; and a sub-pixel isolation section that isolates the photoelectric conversion section including each of a plurality of sub-pixels by sub-pixel.

Description

Technical Field

[0001] The present disclosure relates to an imaging device and an electronic device. Background Art

[0002] As an imaging device used for a digital camera or a video camera, a charge coupled device (CCD) image sensor or a complementary metal oxide semiconductor (CMOS) image sensor is known.

[0003] In these image sensors, in order to suppress crosstalk between pixels, it has been studied to form gaps between color filters provided for each pixel. For example, the following Patent Document 1 discloses forming gaps by closing the upper openings of grooves formed between color filters with a low cover film. Citation list Patent Documents

[0004] Patent Document 1: U.S. Patent Application Publication No. 2019 / 0157329 Summary of the invention Technical problem to be solved by the invention

[0005] However, in the image sensor disclosed in Patent Document 1 described above, crosstalk between sub-pixels in a pixel including a plurality of sub-pixels (for example, a pixel used for phase difference detection or the like) is not particularly studied.

[0006] Therefore, the present disclosure proposes a novel and improved imaging device and electronic device capable of further improving the separation ratio between a plurality of sub-pixels included in a pixel. Solutions to technical problems

[0007] According to the present disclosure, there is provided an imaging device, which includes a semiconductor substrate, the semiconductor substrate including a photoelectric conversion unit provided for each pixel arranged two-dimensionally and a pixel isolation unit isolating the photoelectric conversion units from each other; a color filter and an on-chip lens provided for each pixel on a surface of the semiconductor substrate; an inter-color filter isolation unit, which is provided to include a low-refractive index material having a refractive index lower than that of the color filter between the color filters and isolate the color filters for each pixel; and a sub-pixel isolation unit, which isolates the photoelectric conversion unit of the pixel including a plurality of the sub-pixels for each sub-pixel.

[0008] In addition, according to the present disclosure, an electronic device including a camera device is provided, wherein the camera device includes a semiconductor substrate, the semiconductor substrate including a photoelectric conversion unit provided for each pixel arranged two-dimensionally and a pixel isolation unit isolating the photoelectric conversion units from each other; a color filter and an on-chip lens provided for each pixel on a surface of the semiconductor substrate; an inter-color filter isolation unit, which is provided to include a low-refractive index material having a refractive index lower than that of the color filter between the color filters and isolate the color filters for each pixel; and a sub-pixel isolation unit, which isolates the photoelectric conversion unit of the pixel including a plurality of the sub-pixels for each sub-pixel. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a schematic diagram showing the overall configuration of the imaging device. Figure 2 is a longitudinal cross-sectional view showing a cross-sectional configuration of a pixel portion according to a configuration example of the first embodiment. Figure 3 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion in a pixel portion. Figure 4 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion in a pixel portion. Figure 5 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion in a pixel portion. Figure 6 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion in a pixel portion. Figure 7 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion in a pixel portion. Figure 8 is a longitudinal cross-sectional view showing a cross-sectional configuration of a pixel portion according to a modification example of the first embodiment. Fig. 9 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion in a pixel portion. Fig.10 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion in a pixel portion. Fig.11 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion in a pixel portion. Fig.12 2 is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the first embodiment. Fig.13 2 is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the first embodiment. Fig.142 is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the first embodiment. Fig.15 2 is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the first embodiment. Fig.16A is a plan view showing an example of the planar arrangement of the resist layer remaining after the entire exposure. Fig. 16B is a plan view showing an example of the planar arrangement of the resist layer remaining after the entire exposure. Fig.17 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.18 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.19 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig. 20 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.21 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig. 22 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.23 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.24 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.25 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.26 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig. 27 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.28 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.29 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.30: is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.31 : is a longitudinal cross-sectional view showing a manufacturing step of the pixel portion according to the configuration example of the first embodiment. Fig.32 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.33 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.34 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.35 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.36 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.37 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.38 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.39 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.40 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.41 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.42 is a longitudinal cross-sectional view showing a manufacturing step of a pixel portion according to a modification example of the first embodiment. Fig.43 is a longitudinal cross-sectional view showing a cross-sectional configuration of a pixel portion according to a configuration example of the second embodiment. Fig.44 is shown along Fig.43 Cross-sectional views of the plane structures of the A-AA section and the B-BB section. Fig.45 is a longitudinal cross-sectional view showing a cross-sectional configuration of a pixel portion according to a modification example of the second embodiment. Fig.46 is shown along Fig.45 Cross-sectional views of the plane structures of the A-AA section and the B-BB section. Fig.47 : is a plan view showing an example of a planar arrangement of a low refractive index region in a pixel divided into two left and right sub-pixels. Fig.48 : is a plan view showing an example of a planar arrangement of a low refractive index region in a pixel divided into two left and right sub-pixels. Fig.49 : is a plan view showing an example of a planar arrangement of a low refractive index region in a pixel divided into two left and right sub-pixels. Fig.50 : is a plan view showing an example of a planar arrangement of a low refractive index region in a pixel divided into four sub-pixels in a cross shape. Fig.51 : is a plan view showing an example of a planar arrangement of a low refractive index region in a pixel divided into four sub-pixels in a cross shape. Fig.52 : is a plan view showing an example of a planar arrangement of a low refractive index region in a pixel divided into four sub-pixels in a cross shape. Fig.53 is a block diagram showing a configuration example of an electronic device including an imaging device. Fig.54 is a block diagram showing an example of a schematic configuration of a vehicle control system. Fig.55 1 is an explanatory diagram showing an example of the installation positions of the vehicle exterior information detection unit and the imaging unit. DETAILED DESCRIPTION

[0010] Hereinafter, preferred embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant descriptions are omitted.

[0011] Note that the description will be given in the following order. 0. Overall structure of the camera device 1. First Implementation Method 1.1. Construction example 1.2. Modifications 1.3. Manufacturing method 2. Second Implementation Method 2.1. Construction example 2.2. Modifications 2.3. Planar structure of low refractive index region 3. Electronic devices 4. Application examples

[0012] <0. Overall Structure of Camera Device> First, refer to Figure 1The overall configuration of an image pickup device according to each embodiment of the present disclosure is described. Figure 1 is a schematic diagram showing the overall configuration of the imaging device 1 .

[0013] like Figure 1 As shown, the imaging device 1 includes a pixel portion 13 including a plurality of pixels 12 formed on a semiconductor substrate, a vertical drive circuit 14 , a column signal processing circuit 15 , a horizontal drive circuit 16 , an output circuit 17 , and a control circuit 18 .

[0014] The pixel section 13 includes a plurality of pixels 12 arranged in a matrix on a semiconductor substrate. The pixel 12 includes, for example, a photoelectric conversion section including a photodiode that performs photoelectric conversion on incident light; and a pixel circuit including a transfer transistor, an amplification transistor, a selection transistor, and a reset transistor. The signal charge output from the photoelectric conversion section is converted into a pixel signal by being amplified by the pixel circuit. Note that the pixel circuit may not include a selection transistor.

[0015] The pixels 12 may be arranged in a shared pixel structure. In the shared pixel structure, a portion or all of a pixel circuit is shared between a plurality of adjacent pixels 12. For example, among a plurality of adjacent pixels 12 arranged in a shared pixel structure, a pixel circuit including an amplifier transistor, a selection transistor, and a reset transistor at a later stage of a transfer transistor may be shared. That is, in the shared pixel structure, the pixel circuits of a plurality of adjacent pixels 12 include respective photodiodes, respective transfer transistors, a shared floating diffusion portion (floating diffusion region: FD), a shared amplifier transistor, a shared selection transistor, and a shared reset transistor.

[0016] The control circuit 18 controls the operation of each part of the image pickup device 1. More specifically, the control circuit 18 generates a clock signal and a control signal based on the vertical synchronization signal, the horizontal synchronization signal, and the main clock, and the vertical drive circuit 14, the column signal processing circuit 15, the horizontal drive circuit 16, etc. operate based on the clock signal and the control signal. The control circuit 18 can control the operation of the vertical drive circuit 14, the column signal processing circuit 15, and the horizontal drive circuit 16 using the generated clock signal and the control signal.

[0017] The vertical drive circuit 14 includes, for example, a shift register. The vertical drive circuit 14 drives the pixels 12 row by row by selectively scanning the pixels 12 row by row in the vertical direction. Therefore, the vertical drive circuit 14 can read the pixel signals generated according to the light reception amount of each pixel 12 from each pixel 12, and supply the pixel signals to the column signal processing circuit 15 via the vertical signal line 19.

[0018] A column signal processing circuit 15 is provided for each column of the pixel 12, and the column signal processing circuit performs signal processing such as noise removal on the pixel signal output from the pixel 12. For example, the column signal processing circuit 15 may perform correlated double sampling (CDS) processing for removing pattern noise specific to each pixel 12, analog-to-digital (AD) conversion processing, and the like on the pixel signal output from the pixel 12.

[0019] The horizontal drive circuit 16 includes, for example, a shift register, and sequentially outputs horizontal scanning pulses, and sequentially selects each column signal processing circuit 15 so that each column signal processing circuit 15 outputs a pixel signal to the horizontal signal line 20 .

[0020] The output circuit 17 outputs the pixel signals sequentially supplied from the respective column signal processing circuits 15 via the horizontal signal line 20 to the outside of the image pickup device 1. For example, the output circuit 17 may perform various types of digital signal processing such as buffering, black level adjustment, or column variation correction on the pixel signals supplied from the respective column signal processing circuits 15, and output the pixel signals after the signal processing to the outside of the image pickup device 1.

[0021] The image pickup device 1 having the above-described configuration is a so-called column AD type complementary MOS (CMOS) image sensor in which a column signal processing circuit 15 that performs CDS processing and AD conversion processing is provided for each column of pixels 12. Hereinafter, the specific configuration of the pixel section 13 included in the above-described image pickup device 1 will be described with respect to the first embodiment and the second embodiment, respectively.

[0022] <1. First Implementation Method> (1.1. Construction example) Will refer to Figure 2 A configuration example of the pixel section 13 according to the first embodiment of the present disclosure is described. Figure 2 is a longitudinal cross-sectional view showing a cross-sectional configuration of a pixel section 13A according to a configuration example of the first embodiment.

[0023] like Figure 2 As shown, the pixel section 13A includes a semiconductor substrate 110 in which a photoelectric conversion section 111 is provided, a dielectric layer 122, a reflection control layer 123, a fixed charge layer 124, a color filter 130, an insulating layer 141, an on-chip lens 151, and an anti-reflection film 152. The pixels 12 included in the pixel section 13A are pixels each having a plurality of sub-pixels in which a light receiving area is divided with respect to one color filter 130 and one on-chip lens 151. Such a pixel 12 is used, for example, as a phase difference pixel for detecting the distance of a subject based on a pixel signal obtained at each sub-pixel.

[0024] The semiconductor substrate 110 is, for example, a substrate having a thickness of 1 μm to 6 μm and made of silicon (Si). In the semiconductor substrate 110, a photoelectric conversion unit 111 that generates a signal charge corresponding to the amount of incident light received is provided for each pixel 12. The photoelectric conversion unit 111 is a photodiode, and is composed of a PN junction between a semiconductor region of a first conductivity type (e.g., p-type) and a semiconductor region of a second conductivity type (e.g., n-type). For example, the photoelectric conversion unit 111 can be formed by providing a semiconductor region of a second conductivity type (e.g., n-type) inside a well region of a first conductivity type (e.g., p-type) for each pixel 12.

[0025] The photoelectric conversion units 111 provided for the respective pixels 12 are physically and electrically separated from each other in the pixel isolation unit 112 formed of an insulating material. The pixel isolation unit 112 may include, for example, silicon oxide (SiO x ), insulating materials such as silicon nitride (SiN) or silicon nitride oxide (SiON) are used to separate the photoelectric conversion unit 111 in each pixel 12.

[0026] In addition, the photoelectric conversion unit 111 separated by the pixel isolation unit 112 for each pixel 12 is further physically and electrically separated by the sub-pixel isolation unit 114 for each sub-pixel. For example, by extending a silicon oxide (SiO x ), silicon nitride (SiN) or silicon oxynitride (SiON) and other insulating materials are used to set the sub-pixel isolation portion 114.

[0027] In addition, a light shielding portion 113 is provided above the pixel isolation portion 112. Specifically, the light shielding portion 113 may be provided to be buried in the pixel isolation portion 112 on the color filter 130 side. For example, the light shielding portion 113 may be formed of a conductive material capable of shielding light, such as tungsten (W), aluminum (Al), copper (Cu), titanium nitride (TiN), or polycrystalline silicon (poly-Si), or may be formed of an organic resin material containing a carbon black pigment or a titanium black pigment. The light shielding portion 113 may suppress crosstalk between adjacent pixels 12 by preventing light from leaking into the adjacent pixels 12.

[0028] The dielectric layer 122 is formed of a dielectric material and is arranged to extend from the pixel isolation portion 112. Specifically, the dielectric layer 122 is arranged to extend from the end of the pixel isolation portion 112 on the light shielding portion 113 side to surround the lower surface and the side surface of the light shielding portion 113. The dielectric layer 122 is also arranged along the lower surface of the color filter 130 by extending from the lower surface and the side surface of the light shielding portion 113 to above the semiconductor substrate 110.

[0029] The dielectric layer 122 is formed of the same insulating material (i.e., dielectric material) as the pixel isolation portion 112, and is formed in the same process as the pixel isolation portion 112. For example, the pixel isolation portion 112 and the dielectric layer 122 can be formed by depositing silicon oxide (SiO2), silicon nitride (SiN), silicon oxynitride (SiON), etc. using atomic layer deposition (ALD). In this case, the thickness of the dielectric layer 122 set along the side of the light shielding portion 113 can be at least approximately the same as the thickness of the dielectric layer 122 set along the lower surface of the light shielding portion 113. In addition, the thickness of the dielectric layer 122 set along the lower surface of the color filter 130 can be approximately the same as the thickness of the dielectric layer 122 set along the side and lower surface of the light shielding portion 113.

[0030] However, the thickness of the dielectric layer 122 provided along the side of the light shielding portion 113 may be thinner than the thickness of the dielectric layer 122 provided along the lower surface of the light shielding portion 113. In this case, the pixel portion 13A can further improve the quantum efficiency in the photoelectric conversion portion 111 of the pixel 12, and further suppress the crosstalk between the pixels 12.

[0031] The fixed charge layer 124 is formed of a material having a negative fixed charge and is disposed at an interface between the semiconductor substrate 110 and another layer. Specifically, the fixed charge layer 124 may be composed of a high dielectric material having a negative fixed charge, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), tantalum oxide (Ta2O5), titanium oxide (TiO2), magnesium oxide (MgO), yttrium oxide (Y2O3), or an oxide of a lanthanide element. The fixed charge layer 124 may suppress the generation of dark current at the interface between the semiconductor substrate 110 and another layer by forming a region where positive charges are accumulated at the interface with the semiconductor substrate 110 using negative fixed charges.

[0032] For example, the fixed charge layer 124 may be provided to extend between the semiconductor substrate 110 and other layers such as the dielectric layer 122 provided on the side of the light shielding portion 113, the pixel isolation portion 112 and the sub-pixel isolation portion 114 continuous with the dielectric layer 122. In this case, the fixed charge layer 124 may suppress dark current generated between the semiconductor substrate 110 and the dielectric layer 122, the pixel isolation portion 112 and the sub-pixel isolation portion 114 by negative fixed charges.

[0033] The reflection control layer 123 is formed of a material having a refractive index higher than that of the dielectric layer 122 and lower than that of the semiconductor substrate 110, and is disposed between the fixed charge layer 124 and the dielectric layer 122 on the semiconductor substrate 110. For example, the reflection control layer 123 may be disposed between the fixed charge layer 124 disposed on the surface of the semiconductor substrate 110 and the dielectric layer 122 disposed on the lower surface of the color filter 130. Since the reflection control layer 123 can suppress reflection of light at the interface with the dielectric layer 122 or at the interface with the semiconductor substrate 110, the incident efficiency of light on the photoelectric conversion unit 111 can be improved.

[0034] The color filter 130 is disposed on the dielectric layer 122 for each pixel 12, and selectively transmits light of a wavelength band corresponding to each pixel 12 (e.g., red light (R), green light (G), and blue light (B)). For example, the color filter 130 may be disposed in a predetermined RGB array such as a Bayer array.

[0035] As an example, the color filter 130 may be a color filter in which a pigment or dye is added to a transparent resin that transmits visible light. As another example, the color filter 130 may be a transparent color filter formed of a transparent resin that transmits visible light, a neutral density (ND) filter in which carbon black is added to a transparent resin, or the like.

[0036] Here, in the pixel section 13A, the color filter 130 , the dielectric layer 122 , the reflection control layer 123 , and the fixed charge layer 124 are divided for each pixel 12 by an inter-color filter partition 140 extending in the thickness direction of the semiconductor substrate 110 .

[0037] The inter-color filter spacer 140 includes a low-refractive index material having a lower refractive index than the refractive index of the color filter 130, and is disposed between the color filter 130, the dielectric layer 122, the reflection control layer 123, and the fixed charge layer 124, which are respectively disposed for the pixel 12. Accordingly, the inter-color filter spacer 140 can cause the color filter 130, the dielectric layer 122, the reflection control layer 123, and the fixed charge layer 124 to function as a waveguide sandwiching a high-refractive index material between the low-refractive index materials. Therefore, the inter-color filter spacer 140 reflects light traveling to the adjacent pixel 12 at the interface with the color filter 130, thereby being able to improve the incident efficiency of light on the photoelectric conversion unit 111.

[0038] The low refractive index material included in the color filter isolation portion 140 may be air having a refractive index of about 1. In this case, the color filter isolation portion 140 includes a gap containing air and an insulating material covering at least a portion of the inner wall of the gap. Note that the insulating material covering at least a portion of the inner wall of the gap is, for example, an insulating material that enters the inside of the gap when the insulating layer 141 that seals the gap is formed.

[0039] The low refractive index material contained in the inter-color filter isolation portion 140 may be a material other than air, and may be, for example, an inorganic material such as silicon oxide (SiO2), silicon nitride (SiN) or silicon oxynitride (SiON), may be a resin material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin or a siloxane resin, or may be a so-called low-k material such as SiOF, SiOC or porous silica.

[0040] The insulating layer 141 is composed of an insulating material on the color filter 130. For example, the insulating layer 141 can be provided by forming a film of silicon oxide (SiO2) or the like on the color filter 130 with high coverage.

[0041] An on-chip lens 151 is provided for each pixel 12 on the insulating layer 141. The on-chip lens 151 may be formed of, for example, a resin material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a silicone resin. The on-chip lens 151 collects light incident on the pixel 12 on the central portion of the pixel 12 so that the light incident on the pixel 12 can be effectively incident on the photoelectric conversion unit 111.

[0042] Furthermore, an anti-reflection film 152 may be formed on the surface layer of the on-chip lens 151 . The anti-reflection film 152 is configured as, for example, a dielectric multilayer film. The anti-reflection film 152 can suppress reflection of light incident on the on-chip lens 151 .

[0043] Next, refer to Figures 3 to 7 The planar layout of the sub-pixel separation portion 114 in the pixel portion 13A will be described. Figures 3 to 7 1 is a plan view showing an example of a planar arrangement of a sub-pixel separation portion 114 in the pixel portion 13A. The sub-pixel separation portion 114 may be arranged in any planar layout as long as the pixel 12 can be divided into a plurality of sub-pixels SP.

[0044] like Figure 3 As shown, the sub-pixel isolating portion 114 may divide the pixel 12 into two sub-pixels SP by extending in one direction from the pixel isolating portion 112 at one end to the pixel isolating portion 112 at the other end.

[0045] like Figure 4 As shown, the sub-pixel isolating portion 114 can be provided in the pixel 12 in an island shape while extending in one direction to divide the pixel 12 into two sub-pixels SP. That is, the sub-pixel isolating portion 114 does not need to completely separate the photoelectric conversion portions 111 of the two sub-pixels SP by not contacting the pixel isolating portion 112 at one or both ends.

[0046] like Figure 5As shown, the sub-pixel isolation portion 114 may extend from the pixel isolation portion 112 at one end in one direction toward the pixel isolation portion 112 at the other end, and may be divided into a plurality of parts separated from each other at the central portion of the pixel 12. In this case, the sub-pixel isolation portion 114 is not provided at the central portion of the pixel 12. Therefore, the sub-pixel isolation portion 114 may avoid incident light that is scattered and collected at the light collection center of the central portion of the pixel 12. Therefore, the sub-pixel isolation portion 114 may suppress crosstalk between sub-pixels SP caused by scattering at the light collection center of the pixel 12.

[0047] like Figure 6 As shown, the sub-pixel isolation portion 114 can be provided across a plurality of pixels 12. Specifically, the sub-pixel isolation portion 114 can be provided to extend from one pixel 12 to another adjacent pixel 12 in one direction across the pixel isolation portion 112 between adjacent pixels 12. Accordingly, since the pixel portion 13A can simplify the formation process of the sub-pixel isolation portion 114, the manufacturing cost can be suppressed.

[0048] like Figure 7 As shown, the sub-pixel isolating portion 114 may also be continuously provided over a plurality of pixels 12. Specifically, the sub-pixel isolating portion 114 may be continuously provided so as to span a plurality of pixels 12 extending in one direction. That is, the sub-pixel isolating portion 114 may divide each of the plurality of pixels 12 into two sub-pixels SP by extending in one direction over the entire pixel portion 13A. Even in this case, the pixel portion 13A may simplify the formation process of the sub-pixel isolating portion 114, thereby being able to suppress manufacturing costs.

[0049] (1.2. Modification) Will refer to Figure 8 A modification example of the pixel portion 13 according to the present embodiment will be described. Figure 8 is a longitudinal cross-sectional view showing a cross-sectional configuration of a pixel section 13B according to a modification example of the first embodiment.

[0050] like Figure 8 As shown, the pixel section 13B includes a semiconductor substrate 110 in which a photoelectric conversion section 111 is provided, a dielectric layer 122, a reflection control layer 123, a fixed charge layer 124, a color filter 130, an insulating layer 141, an on-chip lens 151, and an anti-reflection film 152. The pixel 12 included in the pixel section 13B is a pixel having a plurality of sub-pixels in which a light receiving area is divided for one color filter 130 and one on-chip lens.

[0051] The pixel portion 13B and Figure 2The pixel section 13A shown is different in that the sub-pixel separation section 114 is divided in the thickness direction of the semiconductor substrate 110. Specifically, in the pixel section 13B, the sub-pixel separation section 114 is divided in the thickness direction of the semiconductor substrate 110 into a plurality of parts separated from each other.

[0052] For example, the sub-pixel isolation portion 114 may be divided into a first sub-pixel isolation portion 114A extending in the thickness direction of the semiconductor substrate 110 from the first surface S1 on the side where the color filter 130 is provided, and a second sub-pixel isolation portion 114B extending in the thickness direction of the semiconductor substrate 110 from the second surface S2 on the opposite side of the first surface S1. The first sub-pixel isolation portion 114A is formed by providing an opening in the semiconductor substrate 110 from the first surface S1, and the second sub-pixel isolation portion 114B is formed by providing an opening in the semiconductor substrate 110 from the second surface S2. Even in this case, the sub-pixel isolation portion 114 can physically and electrically separate the photoelectric conversion portion 111 for each sub-pixel.

[0053] Will refer to Figures 9 to 11 The planar layout of the sub-pixel separation portion 114 in the pixel portion 13B will be described. Figures 9 to 11 13B is a plan view showing an example of a planar arrangement of a sub-pixel separation portion 114 in the pixel portion 13B. The sub-pixel separation portion 114 may be arranged in any planar layout as long as the pixel 12 can be divided into a plurality of sub-pixels SP.

[0054] like Fig. 9 As shown, the sub-pixel isolating portion 114 may divide the pixel 12 into two sub-pixels SP by extending in one direction from the pixel isolating portion 112 at one end to the pixel isolating portion 112 at the other end.

[0055] like Fig.10 As shown, the sub-pixel isolating portion 114 may be provided in the pixel 12 in an island shape while extending in one direction to divide the pixel 12 into two sub-pixels SP. That is, the sub-pixel isolating portion 114 does not need to be in contact with the pixel isolating portion 112 at one or both ends, and the photoelectric conversion portions 111 of the two sub-pixels SP may not be completely separated.

[0056] like Fig.11As shown, the sub-pixel isolation portion 114 may extend from the pixel isolation portion 112 at one end in one direction toward the pixel isolation portion 112 at the other end, and may be divided into a plurality of parts separated from each other at the central portion of the pixel 12. In this case, the sub-pixel isolation portion 114 is not provided at the central portion of the pixel 12. Therefore, the sub-pixel isolation portion 114 may avoid incident light that is scattered and collected at the light collection center of the central portion of the pixel 12. Therefore, the sub-pixel isolation portion 114 may suppress crosstalk between sub-pixels SP caused by scattering at the light collection center of the pixel 12.

[0057] (1.3. Manufacturing method) (Method of Manufacturing Pixel Unit 13A) Will refer to Figures 12 to 31 A method of manufacturing the pixel section 13A according to the configuration example of the first embodiment is described. Figures 12 to 15 and Figures 17 to 31 2 is a longitudinal cross-sectional view showing a manufacturing step of the pixel section 13A according to the configuration example of the first embodiment.

[0058] Note that Figures 12 to 15 as well as Figures 17 to 31 In FIG. 1 , “center” indicates an area on the central side of the pixel portion 13A, and “edge” indicates an area on the peripheral edge side of the pixel portion 13A. In addition, “OPB” indicates an optical black area provided in the pixel portion 13A. The optical black area is an area for detecting dark noise by the photoelectric conversion portion 111 being shielded from light.

[0059] First, if Fig.12 As shown, the semiconductor substrate 110 and the circuit layer 200 including pixel transistors, wirings, etc. are bonded together, and the bonded semiconductor substrate 110 is etched to form an opening 1121. For example, the opening 1121 can be set to penetrate the semiconductor substrate 110 formed of silicon. Note that an uneven structure for preventing reflection can be formed on the surface of the semiconductor substrate 110 opposite to the surface bonded to the circuit layer 200.

[0060] The opening 1121 is a recessed portion that forms the pixel isolation portion 112 or the sub-pixel isolation portion 114 in a subsequent process. The opening 1121 may have different widths or depths between the opening 1121 that forms the pixel isolation portion 112 and the opening 1121 that forms the sub-pixel isolation portion 114, or may have the same width or height.

[0061] Next, if Fig.13 As shown, a protective film 310 is formed by ALD on the exposed surface of the semiconductor substrate 110. The protective film 310 is formed of, for example, silicon oxide (SiO2) or the like, and can be formed with a uniform thickness on the exposed surface of the semiconductor substrate 110 including the bottom surface and inner side surface of the opening 1121.

[0062] Then, if Fig.14 As shown, a resist layer 320 is formed to fill the opening 1121 and cover the surface of the semiconductor substrate 110. The resist layer 320 may be, for example, an i-line resist.

[0063] Next, if Fig.15 As shown, by exposing the entire surface of the resist layer 320, the resist layer 320 is retreated until the protective film 310 provided on the surface of the semiconductor substrate 110 is exposed. At this time, in the opening 1121P where the pixel isolation portion 112 is formed, exposure is performed so that the exposed resist layer 320 retreats to the inside of the opening 1121P. On the other hand, in the opening 1121M where the sub-pixel isolation portion 114 is formed, exposure is controlled using a hard mask or the like so that the resist layer 320 remains on the protective film 310.

[0064] Fig.16A and Fig. 16B 3 is a plan view showing an example of the planar arrangement of the resist layer 320 remaining after the entire surface is exposed. Fig.16A and Fig. 16B As shown, the resist layer 320 may be exposed to leave a region covering the opening 1121M forming the sub-pixel isolation portion 114. For example, considering the positional shift where the resist layer 320 overlaps the opening 1121M, it is desirable that the resist layer 320 be exposed to leave a region wider than the opening 1121M.

[0065] like Fig.16A As shown, the resist layer 320 may be exposed to remain in a wider rectangular region including the sub-pixel isolation portion 114 disposed in an island shape in the pixel 12. Fig. 16B As shown, the resist layer 320 may be exposed to remain in a rectangular region across the plurality of pixels 12 , thereby including the sub-pixel isolation portion 114 disposed across the plurality of pixels 12 .

[0066] Then, if Fig.17 As shown, etching (etching back) is performed on the entire surface of the semiconductor substrate 110. Therefore, the retreat amount of the resist layer 320 in the opening 1121P is controlled to a target depth.

[0067] Next, if Fig.18 As shown, the protection film 310 not covered by the resist layer 320 is removed by etching with diluted hydrofluoric acid (DHF).

[0068] Then, if Fig.19 As shown, the region of the semiconductor substrate 110 not covered by the protective film 310 and the resist layer 320 is isotropically etched by chemical dry etching (CDE). Therefore, the opening width of the upper portion of the opening 1121P becomes wider.

[0069] Then, if Fig. 20 As shown, the protective film 310 and the resist layer 320 are removed. At this time, the same gap as that through the opening 1121M is generated. Fig.19 The CDE process shown causes the surface of the semiconductor substrate 110 to retreat by a corresponding step.

[0070] Next, if Fig.21 As shown, the fixed charge layer 124 and the reflection control layer 123 are sequentially formed by ALD along the shape of the semiconductor substrate 110. For example, the fixed charge layer 124 may be formed with a uniform thickness on the exposed surface of the semiconductor substrate 110, the exposed surface including the bottom surface and the inner side surface of the opening 1121P and the opening 1121M. In addition, the reflection control layer 123 may be formed only on the fixed charge layer 124 disposed on the surface of the semiconductor substrate 110.

[0071] Next, if Fig. 22 As shown, an insulating material such as SiO2 is deposited on the fixed charge layer 124 by ALD to fill the opening 1121P and the opening 1121M. Therefore, the pixel separation part 112 is formed inside the opening 1121P, and the sub-pixel separation part 114 is formed inside the opening 1121M.

[0072] At this time, although the opening 1121M is completely buried, the opening 1121P is not completely buried due to the widening of the opening width. Therefore, a recessed structure is retained on the pixel isolation portion 112 formed in the opening 1121P. In the recessed structure on the pixel isolation portion 112, the light shielding portion 113 is formed in a subsequent process.

[0073] Then, if Fig.23 As shown, the thickness of the insulating material on the reflection control layer 123 is controlled by full surface etching (etching back) using CDE, thereby forming the dielectric layer 122. In addition, by the above-mentioned full surface etching, the width and depth of the recessed structure on the pixel isolation portion 112 formed in the opening 1121P are controlled to a desired width and depth.

[0074] Next, if Fig.24 As shown, a light shielding film 330 is formed on the dielectric layer 122 to fill the recessed structure on the pixel isolation portion 112 formed in the opening 1121P. The light shielding film 330 may have a stacked structure of Ti or TiN and W, for example.

[0075] In addition, if Fig.25 As shown, by using chemical mechanical polishing (CMP) and dry etching in combination, the light shielding film 330 in the region other than the recessed structure on the pixel isolation portion 112 is removed. Thus, the light shielding portion 113 is formed on the pixel isolation portion 112 formed in the opening 1121P.

[0076] Then, if Fig.26 As shown, the fixed charge layer 124, the reflection control layer 123, and a portion of the dielectric layer 122 in the optical black area OPB are removed to form an opening BLH. Note that a protective film formed of an insulating material may be formed on the light shielding portion 113 to protect the light shielding portion 113 from subsequent processes.

[0077] Next, if Fig. 27 As shown, a light shielding film PBL is formed on the entire surface of the semiconductor substrate 110 to fill the opening BLH. For example, the light shielding film PBL may have a stacked structure of TiN, Ti, and W.

[0078] Then, if Fig.28 As shown, the light shielding film BL disposed on the effective pixels other than the optical black area OPB is removed by combining chemical mechanical polishing (CMP) and dry etching. Therefore, a pixel capable of detecting dark noise is formed in the optical black area OPB.

[0079] Next, if Fig.29 As shown, the temporary wall portion 340 is formed on the semiconductor substrate 110 by chemical vapor deposition (CVD). The temporary wall portion 340 is formed of amorphous silicon (a-Si) or the like, and serves as a guide when the color filter 130 is formed in a subsequent process.

[0080] Then, if Fig.30 As shown, a mask layer PR patterned to define each pixel 12 is formed on the temporary wall portion 340. For example, in the region Center on the central side of the pixel portion 13A, the mask layer PR is patterned and disposed just above the pixel isolation portion 112 that defines the photoelectric conversion portion 111 of each pixel 12. On the other hand, in the region Edge on the peripheral edge side of the pixel portion 13A, the mask layer PR is patterned and disposed at a position offset from the top of the pixel isolation portion 112 that defines the photoelectric conversion portion 111 of each pixel 12 by a pupil correction amount.

[0081] Then, if Fig.31 As shown, after etching the temporary wall portions 340 using the mask layer PR, the color filters 130 are provided in the regions between the temporary wall portions 340 to correspond to the pixels 12. Furthermore, after forming the inter-color filter isolation portion 140 between the color filters 130, the on-chip lens 151 on the color filter 130 is formed.

[0082] Through the above steps, the pixel portion 13A is manufactured.

[0083] (Method of Manufacturing Pixel Section 13B) Will refer to Figures 32 to 42A method for manufacturing the pixel section 13B according to a modification of the first embodiment will be described. Figure 32 to Figure 42 2 is a longitudinal cross-sectional view showing a manufacturing step of the pixel section 13B according to the modification example of the first embodiment.

[0084] Note that Figures 32 to 42 In FIG. 1 , “center” indicates an area on the center side of the pixel portion 13B, and “edge” indicates an area on the peripheral edge side of the pixel portion 13B. In addition, “OPB” indicates an optical black area provided in the pixel portion 13B. The optical black area is an area for detecting dark noise by the photoelectric conversion portion 111 shielded from light.

[0085] First, if Fig.32 As shown, the circuit layer 200 including pixel transistors, wirings, etc. and the semiconductor substrate 110 are bonded together, and the bonded semiconductor substrate 110 is etched to form an opening 1121. For example, the opening 1121 can be set to penetrate the semiconductor substrate 110 formed of silicon. The opening 1121 is a concave portion in which the pixel isolation portion 112 is formed in a subsequent process.

[0086] In the pixel portion 13B, an opening 1123 is further formed in the semiconductor substrate 110 from the surface side bonded to the circuit layer 200. The opening 1123 is a recessed portion in which a part of the sub-pixel isolation portion 114 is formed in a subsequent process, and is formed in the semiconductor substrate 110 before bonding to the circuit layer 200. Then, after the opening 1123 is formed, the semiconductor substrate 110 is bonded to the circuit layer 200.

[0087] Next, if Fig.33 As shown, a protective film 310 is formed on the exposed surface of the semiconductor substrate 110 by ALD. The protective film 310 is formed of, for example, silicon oxide (SiO2) or the like, and is formed with a uniform thickness on the exposed surface of the semiconductor substrate 110 including the bottom surface and the inner side surface of the opening 1121 and the opening 1123. In the opening 1123, the side surface is connected to the opening 1121, and a raw material gas flows through the opening 1121 to form the protective film 310.

[0088] Then, if Fig.34 As shown, a resist layer 320 is formed to fill the opening 1121 and the opening 1123 and cover the surface of the semiconductor substrate 110. The resist layer 320 may be, for example, an i-line resist. The opening 1123 is filled with the resist layer 320 as the resist flows through the opening 1121 communicating with the side.

[0089] Next, if Fig.35As shown, by exposing the entire surface of the resist layer 320, the resist layer 320 is retreated until the protective film 310 provided on the surface of the semiconductor substrate 110 is exposed. At this time, in the opening 1121 where the pixel isolation portion 112 is formed, the exposed resist layer 320 is exposed to retreat to the inside of the opening 1121.

[0090] Note that since the opening 1123 is buried in the semiconductor substrate 110 with the resist layer 320, the opening is not affected by the process until the resist layer 320 is removed. Accordingly, in the pixel portion 13B, processing for widening the opening width of the opening 1121 can be performed in a self-aligned manner.

[0091] Then, if Fig.36 As shown, etching (etching back) is performed on the entire surface of the semiconductor substrate 110. Therefore, the retreat amount of the resist layer 320 in the opening 1121 in which the pixel isolation portion 112 is formed is controlled to a target depth.

[0092] Next, if Fig.37 As shown, the protection film 310 not covered by the resist layer 320 is removed by etching with diluted hydrofluoric acid (DHF).

[0093] Then, if Fig.38 As shown, the region of the semiconductor substrate 110 not covered by the protective film 310 and the resist layer 320 is isotropically etched by chemical dry etching (CDE). Therefore, the opening width of the upper portion of the opening 1121 becomes wider.

[0094] Then, if Fig.39 As shown, the protective film 310 and the resist layer 320 are removed. Therefore, the protective film 310 and the resist layer 320 that buried the opening 1121 and the opening 1123 are removed, thereby exposing the inside of the opening 1121 and the opening 1123.

[0095] Next, if Fig.40 As shown, the protection film 311 and the resist layer 321 are formed again on the exposed surface of the semiconductor substrate 110 except for the surface of the semiconductor substrate 110 opposing the opening 1123 .

[0096] Specifically, the protective film 311 is formed with a uniform thickness on the exposed surface of the semiconductor substrate 110 including the bottom surface and the inner side surface of the opening 1121 and the opening 1123. The resist layer 321 is formed to fill the opening 1123 and the opening 1121, and to cover the surface of the semiconductor substrate 110 except for the surface of the semiconductor substrate 110 opposite to the opening 1123. In the opening 1123, the protective film 311 and the resist layer 321 are formed by causing a material to flow through the opening 1121 communicating with the side surface.

[0097] Then, if Fig.41 As shown, by etching the opening of the resist layer 321 on the front side of the semiconductor substrate 110, an opening 1122 is formed on the surface opposite to the surface where the opening 1123 is formed. Then, the protective film 311 and the resist layer 321 are removed. The opening 1122 is a concave portion corresponding to the opening 1123 where the second sub-pixel isolation portion 114B is formed, and in the concave portion, the first sub-pixel isolation portion 114A is formed in a subsequent process. Note that the opening 1122 and the opening 1123 may be connected to each other.

[0098] Next, if Fig.42 As shown, the fixed charge layer 124 and the reflection control layer 123 are sequentially formed by ALD along the shape of the semiconductor substrate 110. For example, the fixed charge layer 124 may also be formed with a uniform thickness on the exposed surface of the semiconductor substrate 110 including the bottom surface and the inner side surface of the opening 1121, the opening 1122, and the opening 1123. In addition, the reflection control layer 123 may be formed only on the fixed charge layer 124 provided on the surface of the semiconductor substrate 110.

[0099] As described above, with the pixel section 13 according to the first embodiment, the degree of isolation between sub-pixels can be improved by separating the pixel 12 by the pixel isolation section 112 and separating the sub-pixels by the sub-pixel isolation section 114. In addition, the pixel section 13 can achieve improvement in quantum efficiency and suppression of crosstalk between pixels 12 by providing the light shielding section 113 on the pixel isolation section 112.

[0100] <2. Second Implementation Method> (2.1. Construction example) Will refer to Fig.43 A configuration example of the pixel section 13 according to the second embodiment of the present disclosure is described. Fig.43 : is a longitudinal cross-sectional view showing a cross-sectional configuration of a pixel section 13C according to a configuration example of the second embodiment.

[0101] like Fig.43 As shown, the pixel section 13C includes a semiconductor substrate 110 in which a photoelectric conversion section 111 is provided, a dielectric layer 122, a reflection control layer 123, a fixed charge layer 124, a color filter 130, an inter-color filter isolation section 140, a low refractive index region 115, an insulating layer 141, an on-chip lens 151, and an anti-reflection film 152. The pixels 12 included in the pixel section 13C are pixels each having a plurality of sub-pixels in which a light receiving area is divided with respect to one color filter 130 and one on-chip lens 151. Such a pixel 12 is used, for example, as a phase difference pixel for detecting the distance of a subject based on pixel signals obtained in each sub-pixel.

[0102] The semiconductor substrate 110 is, for example, a substrate having a thickness of 1 μm to 6 μm and made of silicon (Si). In the semiconductor substrate 110, a photoelectric conversion unit 111 that generates a signal charge corresponding to the amount of incident light received is provided for each pixel 12. The photoelectric conversion unit 111 is a photodiode and is composed of a PN junction between a semiconductor region of a first conductivity type (e.g., p-type) and a semiconductor region of a second conductivity type (e.g., n-type). For example, for each pixel 12, the photoelectric conversion unit 111 can be formed by providing a semiconductor region of a second conductivity type (e.g., n-type) inside a well region of a first conductivity type (e.g., p-type).

[0103] The photoelectric conversion units 111 provided for the respective pixels 12 are physically and electrically separated from each other in the pixel isolation unit 112 formed of an insulating material. The pixel isolation unit 112 may include, for example, silicon oxide (SiO x ), insulating materials such as silicon nitride (SiN) or silicon nitride oxide (SiO2) are used to separate the photoelectric conversion unit 111 in each pixel 12.

[0104] In addition, the photoelectric conversion unit 111 separated by the pixel isolation unit 112 for each pixel 12 is further physically and electrically separated by the sub-pixel isolation unit 114 for each sub-pixel. For example, by extending a silicon oxide (SiO x ), silicon nitride (SiN) or silicon oxynitride (SiON) and other insulating materials are used to set the sub-pixel isolation portion 114.

[0105] The fixed charge layer 124 is formed of a material having a negative fixed charge and is disposed at an interface between the semiconductor substrate 110 and another layer. Specifically, the fixed charge layer 124 may be composed of a high dielectric material having a negative fixed charge, such as hafnium oxide (HfO2), zirconium oxide (ZrO2), aluminum oxide (Al2O3), tantalum oxide (Ta2O5), titanium oxide (TiO2), magnesium oxide (MgO), yttrium oxide (Y2O3), or an oxide of a lanthanide element. The fixed charge layer 124 may suppress the generation of dark current at the interface between the semiconductor substrate 110 and another layer by forming a region where positive charges are accumulated at the interface with the semiconductor substrate 110 using negative fixed charges.

[0106] The reflection control layer 123 is provided using an insulating material having a refractive index smaller than that of the high dielectric material forming the fixed charge layer 124, and is provided on the fixed charge layer 124 provided on the surface of the semiconductor substrate 110. Since the reflection control layer 123 can suppress reflection of light incident on the reflection control layer 123 from the on-chip lens 151, it is possible to improve the incident efficiency of light on the photoelectric conversion unit 111. The reflection control layer 123 can be formed of tantalum oxide (Ta2O5), for example.

[0107] The dielectric layer 122 is formed of an insulating material and is disposed on the reflection control layer 123 continuously across a plurality of pixels 12. For example, the dielectric layer 122 may be made of a dielectric material such as silicon oxide (SiO x ), silicon nitride (SiN) or silicon oxynitride (SiON) and other insulating materials. In addition, the dielectric layer 122 can be formed of the same insulating material (i.e., dielectric material) as the pixel isolation portion 112 using the same ALD process as the pixel isolation portion 112. Accordingly, in the pixel portion 13C, since the dielectric layer 122 and the pixel isolation portion 112 can be formed in the same process, the manufacturing process can be simplified.

[0108] The color filter 130 is disposed on the dielectric layer 122 for each pixel 12, and selectively transmits light of a wavelength band corresponding to each pixel 12 (e.g., red light (R), green light (G), and blue light (B)). For example, the color filter 130 may be disposed in a predetermined RGB array such as a Bayer array.

[0109] The color filter spacer 140 includes a low refractive index material having a lower refractive index than the color filter 130, and is disposed between the color filters 130 disposed for each pixel 12. The low refractive index material included in the color filter spacer 140 may be air having a refractive index of about 1. In addition, the low refractive index material included in the color filter spacer 140 may be, for example, an inorganic material such as silicon oxide (SiO2), silicon nitride (SiN), or silicon oxynitride (SiON), a resin material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin, or a so-called low-k material such as SiOF, SiOC, or porous silica.

[0110] In the case where the low refractive index material included in the color filter isolation portion 140 is air, the gap of the color filter isolation portion 140 can be defined by surrounding the side and top with a contour portion 131 formed of an insulating material. Such a color filter isolation portion 140 can be formed, for example, by the following method. Specifically, first, a temporary wall is formed in a region where a gap is formed between pixels 12, and then a contour portion 131 is formed on the side and top surface of the temporary wall to cover the temporary wall. Next, a color filter 130 is formed in a region of the pixel 12 between the temporary walls covered by the contour portion 131. Then, an opening is provided in the upper contour portion 131, and the temporary wall inside the contour portion 131 is removed by etching through the opening, so that a gap can be formed inside the contour portion 131. Note that the opening formed in the contour portion 131 on the upper surface to remove the temporary wall is closed by an insulating layer 141 provided between the color filter 130 and the on-chip lens 151. Therefore, the inter-color filter spacer 140 having an outer shape with a gap defined by the outline portion 131 may be formed between the color filters 130 .

[0111] The refractive index of the low refractive index material included in the color filter spacer 140 is lower than the refractive index of the color filter 130. Therefore, the color filter 130 and the color filter spacer 140 on both sides of the color filter 130 can be used as a waveguide that sandwiches a high refractive index material between low refractive index materials. Therefore, the color filter spacer 140 can suppress crosstalk to the adjacent pixel 12 by reflecting light propagating to the adjacent pixel 12 at the interface with the color filter 130.

[0112] The low refractive index region 115 is a region having a refractive index lower than that of the color filter 130, and is disposed inside the color filter 130 on the semiconductor substrate 110 side to correspond to the sub-pixel isolation portion 114. The low refractive index region 115 may be formed of, for example, an inorganic material having a refractive index lower than that of the color filter 130, such as silicon oxide (SiO2), silicon nitride (SiN), or silicon oxynitride (SiON), or may be formed of a resin material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a siloxane resin. In addition, the low refractive index region 115 may be composed of a so-called low-k material such as SiOF, SiOC, or porous silica.

[0113] The low refractive index region 115 can form a waveguide in which a high refractive index material (color filter 130) is sandwiched between the low refractive index material (low refractive index region 115 and color filter isolation portion 140) between the low refractive index region 115 and the color filter isolation portion 140 provided between the color filters 130. Accordingly, the low refractive index region 115 can more effectively guide incident light to each sub-pixel separated by the sub-pixel isolation portion 114. Therefore, the low refractive index region 115 can further increase the isolation between sub-pixels by further suppressing crosstalk between sub-pixels.

[0114] The low refractive index region 115 may be disposed on the dielectric layer 122 at a relatively lower height than the inter-color filter partition 140 and the color filter 130. For example, the low refractive index region 115 may be disposed at a height of about half the height of the inter-color filter partition 140 and the color filter 130. By disposing the low refractive index region 115 so that the upper surface exists near the light collection center of the on-chip lens 151, the incident light collected by the on-chip lens 152 can be more effectively guided to each sub-pixel.

[0115] Reference Fig.44 , the positional relationship on a plane between the low refractive index region 115 and the inter-color filter isolation portion 140 and the pixel isolation portion 112 and the sub-pixel isolation portion 114 will be described. Fig.44 It shows Fig.43 The A-AA section and the B-BB section are cross-sectional views of the plane structure.

[0116] like Fig.44 As shown, in the B-BB cross section, the pixel isolation portion 112 can separate the photoelectric conversion portions 111 from each other in a substantially square shape corresponding to the individual pixels 12 arranged in a matrix. The sub-pixel isolation portion 114 can also separate the individual pixels 12 separated by the pixel isolation portion 112 into two rectangular sub-pixels by extending in one direction from the pixel isolation portion 112 at one end to the pixel isolation portion 112 at the other end. On the other hand, in the A-AA cutting surface, the inter-color filter isolation portion 140 can be arranged on the pixel isolation portion 112 in the same planar arrangement as the pixel isolation portion 112 to separate the pixels 12 arranged in a matrix from each other. The low refractive index region 115 can be arranged on the sub-pixel isolation portion 114 in the same planar arrangement as the sub-pixel isolation portion 114 to divide the individual pixels 12 into two rectangular sub-pixels.

[0117] The insulating layer 141 is continuously provided on the contour portion 131 on the upper surface of the color filter isolation portion 140 and the color filter 130 across the plurality of pixels 12. The insulating layer 141 may be made of a material such as silicon oxide (SiO x The insulating layer 141 may be formed on the contour portion 131 and the color filter 130 with a high coverage.

[0118] The insulating layer 141 can be formed of an insulating material having a refractive index that is approximately the same as or smaller than the refractive index of the on-chip lens 151 to be described later. The above-mentioned "approximately the same" can mean, for example, that the difference between the refractive index of the insulating layer 141 and the refractive index of the on-chip lens 151 is within 0.1. Accordingly, the insulating layer 141 can suppress the reflection of the incident light at the interface between the on-chip lens 151 and the insulating layer 141, and the amount of light incident on the photoelectric conversion unit 111 can be further increased. For example, in the case where the on-chip lens 151 is formed of a general optical organic resin (refractive index is about 1.5 to 1.6), the insulating layer 141 can be formed of silicon oxynitride (SiON) having a refractive index of 1.58.

[0119] The on-chip lens 151 is a convex lens that collects incident light, and is provided on the insulating layer 141 for each pixel 12. The on-chip lens 151 may be composed of, for example, a resin material such as a styrene resin, an acrylic resin, a styrene-acrylic copolymer resin, or a silicone resin. The on-chip lens 151 collects light incident on the pixel 12 on the central portion of the pixel 12 so that the light incident on the pixel 12 can be incident on the photoelectric conversion unit 111 more efficiently.

[0120] Furthermore, an anti-reflection film 152 may be formed on the surface layer of the on-chip lens 151 . The anti-reflection film 152 is configured as, for example, a dielectric multilayer film. The anti-reflection film 152 can suppress reflection of light incident on the on-chip lens 151 .

[0121] (2.2. Modification) Will refer to Fig.45 A modification example of the pixel portion 13 according to the present embodiment will be described. Fig.45 is a longitudinal cross-sectional view showing a cross-sectional configuration of a pixel section 13D according to a modification example of the second embodiment.

[0122] like Fig.45 As shown, the pixel section 13D includes a semiconductor substrate 110 in which a photoelectric conversion section 111 is provided, a dielectric layer 122, a reflection control layer 123, a fixed charge layer 124, a color filter 130, an inter-color filter isolation section 140, a low refractive index region 115, a gap 116, an insulating layer 141, an on-chip lens 151, and an anti-reflection film 152. The pixels 12 included in the pixel section 13D are pixels each having a plurality of sub-pixels in which a light receiving region is divided with respect to one color filter 130 and one on-chip lens 151.

[0123] According to this modification, the pixel portion 13D and Fig.43 The pixel section 13C shown is different in that the inter-color filter partition 140 extends to the photoelectric conversion section 111 , and a gap 116 for partitioning the photoelectric conversion section 111 is provided corresponding to the low refractive index region 115 .

[0124] Specifically, the color filter isolation portion 140 may be provided so that the low refractive index material (i.e., the gap) extends from between the color filters 130 through the dielectric layer 122 and the reflection control layer 123 to the inside of the semiconductor substrate 110. Therefore, the color filter isolation portion 140 is provided to extend from between the color filters 130 so that the low refractive index material (i.e., the gap) replaces a portion of the pixel isolation portion 112 and the fixed charge layer 124 provided in the semiconductor substrate 110. Therefore, the color filter isolation portion 140 may isolate the photoelectric conversion portion 111 provided in the semiconductor substrate 110 from each pixel together with the pixel isolation portion 112.

[0125] Such an inter-color filter isolation portion 140 can be formed, for example, by the following method. Specifically, first, a fixed charge layer 124, a reflection control layer 123, and a dielectric layer 122 are sequentially stacked on a semiconductor substrate 110 provided with a pixel isolation portion 112, and then the region provided with the pixel isolation portion 112 and the pixel isolation portion 112 are etched together. Next, a temporary wall in which an etching opening is buried is formed in the region where the inter-color filter isolation portion 140 between the pixels 12 is formed, and then a contour portion 131 is formed on the side and upper surface of the temporary wall to cover the temporary wall. Next, the pixel 12 is formed by forming a color filter 130 in the region between the temporary walls covered by the contour portion 131. Then, an opening is provided in the contour portion 131 on the upper surface, and the temporary wall inside the contour portion 131 is removed to the inside of the semiconductor substrate 110 by etching through the opening, so that the inter-color filter isolation portion 140 in which the gap extends to the inside of the semiconductor substrate 110 can be formed.

[0126] The gap 116 may be provided to extend from below the low refractive index region 115 through the dielectric layer 122 and the reflection control layer 123 to the inside of the semiconductor substrate 110. Therefore, the gap 116 is provided to extend from below the low refractive index region 115 to replace a portion of the sub-pixel isolation portion 114 provided in the semiconductor substrate 110. Therefore, the gap 116 may separate the photoelectric conversion portion 111 provided in the semiconductor substrate 110 from each sub-pixel together with the sub-pixel isolation portion 114.

[0127] For example, such a gap 116 can be formed by the following method. Specifically, first, a fixed charge layer 124, a reflection control layer 123, and a dielectric layer 122 are sequentially stacked on a semiconductor substrate 110 provided with a sub-pixel isolation portion 114, and then the region provided with the sub-pixel isolation portion 114 is etched. Next, the etching opening is closed by the low refractive index region 115. Therefore, a gap 116 extending to the inside of the semiconductor substrate 110 can be formed below the low refractive index region 115.

[0128] Reference Fig.46 , the positional relationship among the low refractive index region 115, the inter-color filter spacer 140, and the gap 116 on a plane will be described. Fig.46 It shows Fig.45 Cross-sectional views of the plane structures of the A-AA section and the B-BB section.

[0129] like Fig.46As shown, in the B-BB cross section, the color filter isolation portion 140 can separate the photoelectric conversion portions 111 from each other in a substantially square shape corresponding to the individual pixels 12 arranged in a matrix form. The gap 116 can extend in one direction from the color filter isolation portion 140 at one end to the color filter isolation portion 140 at the other end to further separate the pixels 12 separated by the color filter isolation portion 140 into two rectangular sub-pixels. On the other hand, similar to the B-BB cutting surface, the color filter isolation portion 140 can separate the pixels 12 arranged in a matrix form from each other on the A-AA cutting surface. The low refractive index region 115 can be arranged on the gap 116 in the same planar arrangement as the gap 116 to separate the individual pixels 12 into two rectangular sub-pixels.

[0130] (2.3. Planar structure of low refractive index region) Will refer to Figures 47 to 52 The planar arrangement of the low refractive index region 115 is described. The low refractive index region 115 may be arranged in any planar layout as long as it is provided on the sub-pixel separation portion 114 in correspondence with the sub-pixel separation portion 114 .

[0131] Figure 47 to Figure 49 1 is a plan view showing an example of a planar arrangement of the low refractive index region 115 of the pixel 12 divided into two left and right sub-pixels. Figure 47 to Figure 49 In the planar arrangement shown, the low refractive index region 115 may also form a waveguide between the low refractive index region and the inter-color filter spacer 140 so that the collected incident light can be separated into individual sub-pixels.

[0132] like Fig.47 As shown, the low refractive index region 115 may be provided in the pixel 12 in an island shape while extending in one direction. That is, the low refractive index region 115 does not need to be in contact with the color filter partition 140 at one or both ends, and does not need to completely divide the sub-pixel. Fig.48 As shown, the low refractive index region 115 may be disposed obliquely relative to the sub-pixel separation portion 114 that vertically divides the pixel 12. Fig.49 As shown, the low refractive index region 115 may be inclined with respect to the sub-pixel separation portion 114 that vertically divides the pixel 12 , and may be provided in the pixel 12 in an island shape.

[0133] Figure 50 to Figure 52 1 is a plan view showing an example of a planar arrangement of the low refractive index region 115 of the pixel 12 divided into four sub-pixels in a cross shape. Figure 50 to Figure 52 In the planar arrangement shown, the low refractive index region 115 may also form a waveguide between the low refractive index region and the inter-color filter spacer 140, thereby being able to separate the collected incident light into the respective sub-pixels.

[0134] like Fig.50 As shown, the low refractive index region 115 may extend in a cross shape from the color filter partition 140 at one end to the color filter partition 140 at the other end to divide the pixel 12 into four sub-pixels. Fig.51 As shown, the low refractive index region 115 may extend in a cross shape and be arranged in an island shape in the pixel 12. That is, the low refractive index region 115 does not need to be in contact with the color filter partition 140 at one or both ends, and does not need to completely divide the sub-pixel. Fig.52 As shown, the low refractive index region 115 may be divided into a plurality of parts extending in a cross shape and separated from each other in the central portion of the pixel 12. Fig.52 As shown, the low refractive index region 115 does not need to be provided in the center portion of the pixel 12 .

[0135] As described above, with the pixel section 13 according to the second embodiment, the isolation between sub-pixels can be improved by separating the pixel 12 by the pixel isolation section 112 and separating the sub-pixels by the sub-pixel isolation section 114. In addition, the pixel section 13 can further improve the quantum efficiency and isolation between sub-pixels by providing the low refractive index region 115 on the sub-pixel isolation section 114.

[0136] <3. Electronic equipment> Next, we will refer to Fig.53 An electronic device including the image pickup device 1 according to the above-described embodiment will be described. Fig.53 1 is a block diagram showing a configuration example of an electronic device 1000 including an image pickup device 1 according to an embodiment. For example, the electronic device 1000 may be a general electronic device using an image pickup device as an image pickup unit (photoelectric conversion unit), such as an image pickup device such as a digital camera or a video camera, a mobile terminal device having an image pickup function, or a copy machine using an image pickup device as an image reading unit. The image pickup device may be mounted on the electronic device 1000 in a chip form, or may be mounted on the electrical device 1000 in a module form in which an image pickup unit and a signal processing unit or an optical system are packaged together.

[0137] like Fig.53 As shown, the electronic device 1000 includes an optical lens 1001, a shutter device 1002, an image pickup device 1, a digital signal processor (DSP) circuit 1011, a frame memory 1014, a display portion 1012, a storage unit 1015, an operation unit 1013, and a power supply unit 1016. The DSP circuit 1011, the frame memory 1014, the display portion 1012, the storage unit 1015, the operation unit 1013, and the power supply unit 1016 are connected to each other via a bus 1017.

[0138] The optical lens 1001 forms an image of incident light from a subject on an imaging surface of the imaging device 1. The shutter device 1002 controls emission or shielding of light incident on the imaging device 1.

[0139] The image pickup device 1 converts the light amount of incident light that forms an image on an image pickup surface by the optical lens 1001 into an electric signal in units of pixels, and outputs the electric signal as a pixel signal.

[0140] The DSP circuit 1011 is a signal processing circuit that performs normal camera signal processing on the pixel signal output from the image pickup device 1. The DSP circuit 1011 can perform, for example, white balance processing, demosaic processing, gamma correction processing, and the like.

[0141] The frame memory 1014 is a temporary data storage unit and is used to store data appropriately during signal processing by the DSP circuit 1011.

[0142] The display portion 1012 includes, for example, a panel-type display device such as a liquid crystal panel or an organic electroluminescent (EL) panel, etc. The display portion 1012 can display a moving image or a still image captured by the image capture device 1 .

[0143] The storage unit 1015 includes a storage medium such as a hard disk drive, an optical disk, or a semiconductor memory, and records a moving image or a still image captured by the camera 1 in the storage medium.

[0144] The operation unit 1013 outputs operation commands for various functions of the electronic device 1000 based on a user's operation.

[0145] The power supply unit 1016 is an operation power supply for the DSP circuit 1011, the frame memory 1014, the display portion 1012, the storage unit 1015, and the operation unit 1013. The power supply unit 1016 can appropriately supply power to these configurations.

[0146] <4. Application Examples> The technology according to the present disclosure (the present technology) can be applied to various products. For example, the technology according to the present disclosure can be implemented in the form of a device installed on any type of mobile body such as an automobile, an electric car, a hybrid car, a motorcycle, a bicycle, a personal mobile device, an airplane, a drone, a ship, or a robot.

[0147] Fig.54 : is a block diagram showing a schematic configuration example of a vehicle control system as an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0148] The vehicle control system 12000 includes a plurality of electronic control units connected to each other via a communication network 12001. Fig.54In the example shown, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an external information detection unit 12030, an internal information detection unit 12040, and an integrated control unit 12050. In addition, as a functional configuration of the integrated control unit 12050, a microcomputer 12051, a sound / image output unit 12052, and an in-vehicle network interface (I / F) 12053 are shown.

[0149] The drive system control unit 12010 controls the operation of devices related to the drive system of the vehicle according to various types of programs. For example, the drive system control unit 12010 serves as a control device for the following devices: a drive force generating device such as an internal combustion engine or a drive motor for generating a vehicle drive force, a drive force transmitting mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a vehicle braking force.

[0150] The body system control unit 12020 controls the operation of various types of devices provided on the vehicle body according to various types of programs. For example, the body system control unit 12020 is used as a control device for a keyless entry system, a smart key system, a power window device, or various lights such as a headlight, a reverse light, a brake light, a turn signal light, or a fog light. In this case, a radio wave transmitted from a mobile device that replaces the key or a signal of various types of switches may be input to the body system control unit 12020. The body system control unit 12020 receives input of these radio waves or signals, and controls a door lock device, a power window device, or a light, etc. of the vehicle.

[0151] The vehicle exterior information detection unit 12030 detects information outside the vehicle including the vehicle control system 12000. For example, the vehicle exterior information detection unit 12030 is connected to the camera unit 12031. The vehicle exterior information detection unit 12030 causes the camera unit 12031 to capture an image of the vehicle exterior and receives the captured image. Based on the received image, the vehicle exterior information detection unit 12030 can perform detection processing of objects such as people, vehicles, obstacles, signs, or characters on the road surface, or can perform detection processing of the distance to the above-mentioned objects.

[0152] The imaging unit 12031 is an optical sensor that receives light and outputs an electrical signal corresponding to the amount of light received. The imaging unit 12031 can output the electrical signal as an image, or can output the electrical signal as distance measurement information. In addition, the light received by the imaging unit 12031 can be visible light, or can be invisible light such as infrared rays.

[0153] The in-vehicle information detection unit 12040 detects information about the interior of the vehicle. The in-vehicle information detection unit 12040 is connected to, for example, a driver state detection unit 12041 that detects the driver's state. The driver state detection unit 12041 includes, for example, a camera that takes a picture of the driver. Based on the detection information input from the driver state detection unit 12041, the in-vehicle information detection unit 12040 can calculate the driver's fatigue level or the driver's concentration level, or can determine whether the driver is dozing off.

[0154] The microcomputer 12051 can calculate the control target value of the driving force generating device, the steering mechanism or the braking device based on the information outside or inside the vehicle obtained by the vehicle outside information detection unit 12030 or the vehicle inside information detection unit 12040, and output the control command to the driving system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of the advanced driver assistance system (ADAS), including collision avoidance or impact mitigation of the vehicle, following driving based on the vehicle-to-vehicle distance, speed maintenance driving, vehicle collision warning or vehicle lane departure warning, etc.

[0155] In addition, by controlling the driving force generating device, steering mechanism or braking device, etc. based on the information outside or inside the vehicle obtained by the external information detection unit 12030 or the internal information detection unit 12040, the microcomputer 12051 can perform collaborative control aimed at achieving automatic driving, etc., wherein the automatic driving enables the vehicle to drive autonomously without relying on the driver's operation.

[0156] Furthermore, based on the information about the outside of the vehicle acquired by the vehicle exterior information detection unit 12030, the microcomputer 12051 may output a control command to the body system control unit 12020. For example, the microcomputer 12051 may perform cooperative control aimed at preventing glare by controlling the headlights to change from high beam to low beam, for example, according to the position of a preceding vehicle or an oncoming vehicle detected by the vehicle exterior information detection unit 12030.

[0157] The sound / image output unit 12052 sends an output signal of at least one of sound and image to an output device capable of visually or auditorily notifying the vehicle's passengers or the outside of the vehicle of information. Fig.54 In the example of , as the output device, an audio speaker 12061, a display portion 12062, and an instrument panel 12063 are shown. For example, the display portion 12062 may include at least one of an in-vehicle display and a head-up display.

[0158] Fig.55 12031 is a diagram showing an example of the installation position of the camera unit 12031.

[0159] exist Fig.55 In the embodiment, the imaging unit 12031 includes imaging units 12101, 12102, 12103, 12104 and 12105.

[0160] The camera units 12101, 12102, 12103, 12104 and 12105 are, for example, arranged at the front nose, rearview mirror, rear bumper and rear door of the vehicle 12100 and at the upper part of the windshield in the vehicle compartment. The camera unit 12101 arranged at the front nose and the camera unit 12105 arranged at the upper part of the windshield in the vehicle compartment mainly obtain images in front of the vehicle 12100. The camera units 12102 and 12103 arranged at the rearview mirror mainly obtain images on both sides of the vehicle 12100. The camera unit 12104 arranged at the rear bumper or rear door mainly obtains images behind the vehicle 12100. The camera unit 12105 arranged at the upper part of the windshield in the vehicle compartment is mainly used to detect the vehicle in front, pedestrians, obstacles, traffic lights, traffic signs or lanes, etc.

[0161] Notice, Fig.55 An example of the imaging range of the imaging units 12101 to 12104 is shown. The imaging range 12111 indicates the imaging range of the imaging unit 12101 provided at the front nose. The imaging ranges 12112 and 12113 respectively indicate the imaging ranges of the imaging units 12102 and 12103 provided at the rearview mirror. The imaging range 12114 indicates the imaging range of the imaging unit 12104 provided at the rear bumper or the rear door. For example, by superimposing the image data captured by the imaging units 12101 to 12104, a bird's-eye view image of the vehicle 12100 observed from above is obtained.

[0162] At least one of the imaging units 12101 to 12104 may have a function of obtaining distance information. For example, at least one of the imaging units 12101 to 12104 may be a stereo camera composed of a plurality of imaging elements, or may be an imaging element having pixels for phase difference detection.

[0163] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12051 can determine the distance to each three-dimensional object within the camera ranges 12111 to 12114 and the time change of the distance (relative speed with respect to the vehicle 12100), thereby extracting the nearest three-dimensional object as the front vehicle, in particular, the three-dimensional object exists on the driving path of the vehicle 12100 and travels in the same direction as the vehicle 12100 at a predetermined speed (e.g., equal to or greater than 0 km / h). In addition, the microcomputer 12051 can pre-set the inter-vehicle distance to be maintained with the front vehicle, and perform automatic braking control (including follow-up stop control) or automatic acceleration control (including follow-up start control), etc. Therefore, cooperative control such as automatic driving, which is intended to make the vehicle travel autonomously without relying on the driver's operation, can be performed.

[0164] For example, based on the distance information obtained from the camera units 12101 to 12104, the microcomputer 12501 can classify the three-dimensional object data of the three-dimensional object into three-dimensional object data of two-wheeled vehicles, standard vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, extract the classified three-dimensional object data, and use the extracted three-dimensional object data to automatically avoid obstacles. For example, the microcomputer 12051 identifies obstacles around the vehicle 12100 as obstacles that the driver of the vehicle 12100 can visually identify and obstacles that the driver of the vehicle 12100 is difficult to visually identify. Then, the microcomputer 12051 determines a collision risk indicating the risk of collision with each obstacle. In the case where the collision risk is equal to or higher than the set value and therefore there is a possibility of collision, the microcomputer 12051 outputs a warning to the driver via the audio speaker 12061 or the display unit 12062, and performs forced deceleration or evasive steering via the drive system control unit 12010. Therefore, the microcomputer 12051 can assist driving to avoid collisions.

[0165] At least one of the camera units 12101 to 12104 may be an infrared camera that detects infrared rays. The microcomputer 12051 may identify a pedestrian, for example, by determining whether a pedestrian exists in the camera images of the camera units 12101 to 12104. For example, such identification of pedestrians is performed by the following steps: a step of extracting feature points in the camera images of the camera units 12101 to 12104 as infrared cameras; and a step of performing pattern matching processing on a series of feature points representing the contour of an object to determine whether it is a pedestrian. If the microcomputer 12051 determines that a pedestrian exists in the camera images of the camera units 12101 to 12104 and thus identifies the pedestrian, the sound / image output unit 12052 controls the display unit 12062 so that a square contour line for emphasis is displayed in a manner superimposed on the identified pedestrian. The sound / image output unit 12052 may also control the display unit 12062 so that an icon representing a pedestrian or the like is displayed at a desired position.

[0166] An example of a vehicle control system to which the technology according to the present disclosure can be applied has been described above. The technology according to the embodiment of the present disclosure can be applied to the camera unit 12031 in the above-mentioned structure. By applying the technology according to the present disclosure, the isolation between pixels or between sub-pixels can be improved, so that the camera unit 12031 can obtain information with higher accuracy and higher resolution. Therefore, using the technology according to the present disclosure, for example, the camera unit 12031 can identify obstacles or pedestrians in the captured image with higher sensitivity, or present a captured image with higher sensitivity to the driver.

[0167] Although the preferred embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the technical scope of the present disclosure is not limited to such examples. Obviously, a person skilled in the art of the present disclosure can think of various substitutions or modifications within the scope of the technical ideas described in the claims, and it is naturally understood that these substitutions or modifications also fall within the technical scope of the present disclosure.

[0168] In addition, the effects described in this specification are merely exemplary or illustrative and are not restrictive. That is, in addition to or in place of the above effects, the technology according to the present disclosure may show other effects that are obvious to those skilled in the art from the description of this specification.

[0169] Note that the following configurations also fall within the technical scope of the present disclosure. (1) A camera device, comprising: a semiconductor substrate including a photoelectric conversion portion provided for each pixel arranged two-dimensionally and a pixel isolation portion isolating the photoelectric conversion portions from each other; A color filter and an on-chip lens provided for each of the pixels on one surface of the semiconductor substrate; an inter-color filter spacer provided to include a low-refractive-index material having a refractive index lower than that of the color filters between the color filters and to isolate the color filters for each of the pixels; and A sub-pixel isolation unit isolates the photoelectric conversion unit of the pixel including a plurality of the sub-pixels for each sub-pixel. (2) The imaging device according to (1), wherein: The pixel includes two sub-pixels, and The sub-pixel separation portion separates the photoelectric conversion portion for each of the sub-pixels by extending in one direction. (3) The image pickup device according to (2), wherein the sub-pixel separation portion is divided into two parts separated from each other by dividing the sub-pixel separation portion at a central portion of the pixel. (4) The image pickup device according to (2) or (3), wherein the sub-pixel separation portion is provided in the pixel in an island shape. (5) The image pickup device according to any one of (2) to (4), wherein a light shielding portion is provided on one side of one surface of the pixel isolation portion. (6) The image pickup device according to any one of (2) to (5), wherein the sub-pixel separation portion is continuously provided between the pixels adjacent to each other across the pixel separation portion between pixels adjacent in one direction. (7) The image pickup device according to any one of (2) to (6), wherein the sub-pixel isolation portion is provided to penetrate the semiconductor substrate. (8) The image pickup device according to (7), wherein the sub-pixel separation portion is divided into two portions separated from each other by dividing the sub-pixel separation portion in a thickness direction of the semiconductor substrate. (9) The imaging device according to any one of (2) to (8), wherein: The low refractive index material is air, and The inter-color filter spacer includes a gap and an insulating material covering at least a portion of an inner wall of the gap, and the gap includes air. (10) The imaging device according to (1), wherein a low refractive index region having a refractive index lower than that of the color filter is provided inside the color filter on one side of the semiconductor substrate. (11) The imaging device according to (10), wherein the low refractive index region is provided to extend from a bottom surface of the color filter on the semiconductor substrate side to a center portion of the color filter. (12) The image pickup device according to (10) or (11), wherein the low refractive index region is provided in a region corresponding to the sub-pixel isolation portion. (13) The imaging device according to (12), wherein the low refractive index region is provided in the pixel in an island shape. (14) The image pickup device according to (12) or (13), wherein the low refractive index region is divided into a plurality of parts separated from each other by dividing the low refractive index region at a central portion of the pixel. (15) The imaging device according to any one of (10) to (14), wherein: The low refractive index material is air, and The gap including air in the inter-color filter spacer has an outer shape defined by surrounding the side surface and the upper surface with an insulating material. (16) The imaging device according to (15), wherein: The gap of the inter-color filter isolation portion is provided to extend to the inside of the semiconductor substrate, and the pixel isolation portion is provided below the gap. (17) The imaging device according to any one of (10) to (16), wherein a gap is provided inside the sub-pixel isolation portion. (18) The imaging device according to any one of (10) to (17), wherein: Each of the pixels includes two of the sub-pixels, and The sub-pixel separation portion separates the photoelectric conversion portion for each sub-pixel by extending in one direction. (19) The imaging device according to any one of (10) to (17), wherein: Each of the pixels includes four of the sub-pixels, and The sub-pixel separation portion separates the photoelectric conversion portion for each sub-pixel by extending in each of one direction and a direction orthogonal to the one direction. (20) An electronic device including a camera device, wherein: The camera device comprises: a semiconductor substrate including a photoelectric conversion portion provided for each pixel arranged two-dimensionally and a pixel isolation portion isolating the photoelectric conversion portions from each other; A color filter and an on-chip lens provided for each of the pixels on one surface of the semiconductor substrate; an inter-color filter spacer provided to include a low-refractive-index material having a refractive index lower than that of the color filters between the color filters and to isolate the color filters for each of the pixels; and A sub-pixel isolation unit isolates the photoelectric conversion unit of the pixel including a plurality of the sub-pixels for each sub-pixel. Reference numerals list

[0170] 1 Camera device 12 pixels 13,13A,13B,13C,13D pixel unit 110Semiconductor substrate 111 Photoelectric Conversion Department 112 pixel isolation unit 113 light shielding part 114 sub-pixel isolation unit 115 Low refractive index area 116 Clearance 122 Dielectric layer 123 reflection control layer 124 Fixed Charge Layer 130 color filters 131 Contour 140 color filter isolation unit 141 Insulation layer 151 On-chip lens 152 Anti-reflective film.

Claims

1. A camera device, comprising: a semiconductor substrate including a photoelectric conversion portion provided for each pixel arranged two-dimensionally and a pixel isolation portion isolating the photoelectric conversion portions from each other; A color filter and an on-chip lens provided for each of the pixels on one surface of the semiconductor substrate; an inter-color filter spacer provided to include a low-refractive-index material having a refractive index lower than that of the color filters between the color filters and to isolate the color filters for each of the pixels; and A sub-pixel isolation unit isolates the photoelectric conversion unit of the pixel including a plurality of the sub-pixels for each sub-pixel.

2. The imaging device according to claim 1, wherein: The pixel includes two sub-pixels, and The sub-pixel separation portion separates the photoelectric conversion portion for each of the sub-pixels by extending in one direction.

3. The imaging device according to claim 2, wherein: The sub-pixel separation portion is divided into two parts separated from each other by dividing the sub-pixel separation portion at a central portion of the pixel.

4. The imaging device according to claim 2, wherein: The sub-pixel separation portion is provided in the pixel in an island shape.

5. The imaging device according to claim 2, wherein: The light shielding portion is provided on one side of one surface of the pixel isolation portion.

6. The imaging device according to claim 2, wherein: The sub-pixel separation portion is continuously provided between the pixels adjacent to each other across the pixel separation portion between the pixels adjacent in the one direction.

7. The imaging device according to claim 2, wherein: The sub-pixel isolation portion is disposed to penetrate the semiconductor substrate.

8. The imaging device according to claim 7, wherein: The sub-pixel separation portion is divided into two portions separated from each other by dividing the sub-pixel separation portion in a thickness direction of the semiconductor substrate.

9. The imaging device according to claim 2, wherein: The low refractive index material is air, and The inter-color filter spacer includes a gap and an insulating material covering at least a portion of an inner wall of the gap, and the gap includes the air.

10. The imaging device according to claim 1, wherein: A low refractive index region having a refractive index lower than that of the color filter is provided inside the color filter on one side of the semiconductor substrate.

11. The imaging device according to claim 10, wherein: The low refractive index region is provided to extend from the bottom surface of the color filter on the semiconductor substrate side to the center portion of the color filter.

12. The imaging device according to claim 10, wherein: The low refractive index region is provided in a region corresponding to the sub-pixel separation portion.

13. The imaging device according to claim 12, wherein: The low refractive index region is provided in the pixel in an island shape.

14. The imaging device according to claim 12, wherein: By dividing the low refractive index region at the central portion of the pixel, the low refractive index region is divided into a plurality of portions separated from each other.

15. The imaging device according to claim 10, wherein: The low refractive index material is air, and The gap including air in the inter-color filter spacer defines an outer shape by surrounding the side surface and the upper surface with an insulating material.

16. The imaging device according to claim 15, wherein: The gap of the inter-color filter isolation portion is provided to extend to the inside of the semiconductor substrate, and the pixel isolation portion is provided below the gap.

17. The imaging device according to claim 10, wherein: A gap is provided inside the sub-pixel isolation portion.

18. The imaging device according to claim 10, wherein: The pixel includes two sub-pixels, and The sub-pixel separation portion separates the photoelectric conversion portion for each of the sub-pixels by extending in one direction.

19. The imaging device according to claim 10, wherein: The pixel includes four sub-pixels, and The sub-pixel separation portion separates the photoelectric conversion portion for each sub-pixel by extending in each of one direction and a direction orthogonal to the one direction.

20. An electronic device comprising a camera device, wherein: The camera device comprises: a semiconductor substrate including a photoelectric conversion portion provided for each pixel arranged two-dimensionally and a pixel isolation portion isolating the photoelectric conversion portions from each other; A color filter and an on-chip lens provided for each of the pixels on one surface of the semiconductor substrate; an inter-color filter spacer provided to include a low-refractive-index material having a refractive index lower than that of the color filters between the color filters and to isolate the color filters for each of the pixels; and A sub-pixel isolation unit isolates the photoelectric conversion unit of the pixel including a plurality of the sub-pixels for each sub-pixel.

Images