A monolayer polariton sequence dual-parameter terahertz device and a preparation method thereof

Abstract

The application discloses a monolayer polariton sequence double-parameter terahertz device and a preparation method thereof, and relates to the technical field of terahertz devices. The monolayer polariton sequence double-parameter terahertz device comprises a dielectric substrate, metal electrodes and sequence detection materials. The metal electrodes are at least three in number, and the number of the sequence detection materials is one less than the number of the metal electrodes. The multiple metal electrodes are arranged in sequence along a first direction on the dielectric substrate. The material of the sequence detection materials is a monolayer two-dimensional crystal. The sequence detection materials comprise multiple sequence strips and connecting parts arranged at two ends of the sequence strips. The sequence strip is formed by sequentially connecting multiple sequence units of the same shape. The multiple sequence strips are distributed in sequence along a second direction on the dielectric substrate. The shapes of the sequence units of each sequence detection material are different. The connecting parts arranged at the two ends of each sequence detection material are respectively connected with two adjacent metal electrodes in the first direction. The first direction and the second direction are perpendicular to each other.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of terahertz detection, in particular to a single-atomic-layer plasmonic sequence dual-parameter terahertz device and a preparation method thereof. BACKGROUND

[0002] The terahertz wave band is an electromagnetic wave spectrum bridging the microwave and infrared wave bands, and the corresponding electromagnetic wave frequency is 0.1-10 THz. The electromagnetic wave in this frequency band has many unique physical properties such as low photon energy, strong penetration, and rich molecular fingerprint characteristics, and has great application prospects in the fields of nondestructive testing, medical diagnosis, and wireless communication. At present, the terahertz detection technology mainly includes thermal type detection technology, photon type detection technology, and electronic type detection technology.

[0003] The thermal type detection technology is to realize terahertz detection by using a thermal sensitive material to absorb terahertz waves and cause the physical properties of the material to change. Typical detectors include Golay detectors, thermal radiation detectors, and pyroelectric detectors. The detector has the characteristics of wide response spectrum range and high response sensitivity, but the response speed of the detector is slow. The photon type detection technology is to realize terahertz detection based on the intraband transition or interband transition effect of a semiconductor. Typical detectors include photoconductive detectors, quantum well detectors, and superconducting detectors. The detector has the advantages of fast response speed and high response sensitivity, but the noise of the material used is relatively large when it works at room temperature, which causes the detector to need to work in a low temperature condition. The electronic type detection technology is an extension of microwave technology in the terahertz wave band, which is to realize terahertz detection by using the nonlinear effect of terahertz waves and material electrons. Typical detectors include Schottky diodes, field effect transistors, and high electron mobility transistors. However, the preparation process of the device is relatively complex, and the preparation cost is relatively high. SUMMARY

[0004] The purpose of the present application is to provide a single-atomic-layer plasmonic sequence dual-parameter terahertz device and a preparation method thereof. The terahertz device can simultaneously have the characteristics of wide response spectrum, high response sensitivity, fast response speed, and dual-parameter terahertz detection.

[0005] In order to achieve the above-mentioned purpose, the present application provides a single-atomic-layer plasmonic sequence dual-parameter terahertz device, which comprises a dielectric substrate, a metal electrode, and a sequence detection material.

[0006] The number of the metal electrodes is at least three, and the number of the sequence detection material is one less than the number of the metal electrodes.

[0007] A plurality of the metal electrodes are arranged in a first direction on the dielectric substrate in sequence.

[0008] The material of the sequence detection material is a single-atomic-layer two-dimensional crystal.

[0009] The sequence detection material comprises a plurality of sequence strips and connecting portions arranged at both ends of the sequence strips, the sequence strips are sequentially connected by a plurality of sequence units of the same shape, and the plurality of sequence strips are sequentially distributed along a second direction on the medium substrate;

[0010] The shapes of the sequence units of each sequence detection material are different;

[0011] The connecting portions arranged at both ends of each sequence detection material are respectively connected with two adjacent metal electrodes in the first direction;

[0012] The first direction and the second direction are perpendicular to each other.

[0013] Preferably, the metal electrodes are three, namely a first metal electrode, a second metal electrode and a third metal electrode, and the first metal electrode, the second metal electrode and the third metal electrode are sequentially arranged along the first direction on the medium substrate;

[0014] The sequence detection material is two, namely a first sequence detection material and a second sequence detection material, the shape of the sequence unit of the first sequence detection material is a circle, the shape of the sequence unit of the second sequence detection material is a rectangle, and the resonance frequencies of the sequence units of the first sequence detection material and the second sequence detection material are the same;

[0015] The connecting portions at both ends of the first sequence detection material are respectively connected with the first metal electrode and the second metal electrode in the first direction, and the connecting portions at both ends of the second sequence detection material are respectively connected with the second metal electrode and the third metal electrode in the first direction.

[0016] Preferably, the duty cycles of the first sequence detection material and the second sequence detection material are 1:1.

[0017] Preferably, the shapes of the sequence units of the plurality of sequence detection materials are circles with different diameters, and the resonance frequencies of the sequence units of each sequence detection material are different.

[0018] Preferably, the sequence detection material is prepared from a single-atom layer two-dimensional crystal through a micro-nano processing process.

[0019] Preferably, the medium substrate is any one of a sapphire substrate, a quartz substrate and an intrinsic silicon substrate containing silicon oxide.

[0020] The application provides a preparation method of a single-atom layer plasmonic sequence dual-parameter terahertz device.

[0021] S1: forming a metal electrode film on a dielectric substrate, and manufacturing a plurality of metal electrodes arranged in sequence along a first direction by using a peeling process;

[0022] S2: separating a plurality of monolayer two-dimensional crystals of monolayer two-dimensional materials from a material substrate, and transferring the plurality of monolayer two-dimensional crystals to the dielectric substrate, wherein two ends of each of the monolayer two-dimensional crystals are connected to two adjacent metal electrodes in the first direction;

[0023] S3: processing the monolayer two-dimensional crystals to form a sequence structure detection material by using a micro-nano processing process.

[0024] Preferably, S2 specifically comprises:

[0025] S21: spin coating a polystyrene film on the surface of the plurality of monolayer two-dimensional materials, and bonding the monolayer two-dimensional crystals 8 of the monolayer two-dimensional materials to the polystyrene film, so that the monolayer two-dimensional crystals 8 are separated from the material substrate;

[0026] S22: bonding the polystyrene film to form a composition by using a high-molecular polymer PDMS film, transferring the composition to the dielectric substrate by using a transfer device, removing the high-molecular polymer PDMS film and the polystyrene film, and leaving the plurality of monolayer two-dimensional crystals on the dielectric substrate plated with the metal electrodes, wherein two ends of each of the monolayer two-dimensional crystals are connected to two adjacent metal electrodes in the first direction.

[0027] Compared with the prior art, the monolayer polariton sequence dual-parameter terahertz device and the preparation method have the beneficial effects that the monolayer two-dimensional crystals are processed into sequence structure detection materials with polariton resonance, the sequence structure detection material includes a plurality of sequence structure strips and connecting portions arranged at two ends of the sequence structure strips, the sequence structure strips are connected by a plurality of sequence structure units with the same shape, the plurality of sequence structure strips are arranged in sequence along a second direction on the dielectric substrate, and the connecting portions arranged at two ends of each of the sequence structure detection materials are connected to two adjacent metal electrodes in the first direction to form a series structure. Since the shapes of the sequence structure units of each of the sequence structure detection materials are different, and the sequence structure detection materials composed of sequence structure units with different shapes can detect different parameters of terahertz, the terahertz device formed by connecting the plurality of sequence structure detection materials in series can detect a plurality of parameters of terahertz.

[0028] When the monolayer polariton sequence dual-parameter terahertz device is placed in a terahertz electromagnetic field, the plasmonic effect of the sequence structure detection material can enhance the interaction between the sequence structure detection material and the terahertz electromagnetic field and enhance the absorption capacity of the terahertz, so that hot carriers are generated in the sequence structure detection material, the hot carriers move directionally under the temperature gradient by the Seebeck effect and generate a photoelectric current, so as to detect the parameters of the terahertz.

[0029] In the single-atom layer plasmonic sequence dual-parameter terahertz device, the plasmonic effect of the sequence detection material can enhance the interaction between the sequence detection material and the terahertz electromagnetic field and enhance the absorption capacity of the terahertz, and the device composed of multiple sequence detection materials in series can detect multiple parameters of the terahertz. Therefore, the single-atom layer plasmonic sequence dual-parameter terahertz device has the advantages of wide response spectrum, high response sensitivity, fast response speed, and detection of multiple parameters of the terahertz, and the size of the detector is small, the noise is small when working at room temperature, and it is not limited to low-temperature environment working. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 is a top view structural schematic diagram of the single-atom layer plasmonic sequence dual-parameter terahertz device described in the embodiments of the present application;

[0031] Figure 2 is a front view structural schematic diagram of the single-atom layer plasmonic sequence dual-parameter terahertz device described in the embodiments of the present application;

[0032] Figure 3 is a top view structural schematic diagram of the single-atom layer plasmonic sequence dual-parameter terahertz device described in another embodiment of the present application;

[0033] Figure 4 is a preparation process schematic diagram of the single-atom layer plasmonic sequence dual-parameter terahertz device described in the embodiments of the present application;

[0034] In the figure, 1 is a dielectric substrate; 2 is a first metal electrode; 3 is a second metal electrode; 4 is a third metal electrode; 5 is a sequence detection material; 51 is a sequence strip; 52 is a connecting part; 511 is a sequence unit; 6 is a first sequence detection material; 7 is a second sequence detection material; and 8 is a single-atom layer two-dimensional crystal. DETAILED DESCRIPTION

[0035] The more specific embodiments of the present application will be further described in detail below in combination with the drawings and examples. The following examples are used to illustrate the present application, but are not used to limit the scope of the present application.

[0036] In the description of the present application, it should be understood that the terms "first", "second", "third" are used only for descriptive purpose, and should not be understood as indicating or implying relative importance. In the description of the embodiments of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounting", "connecting", "connecting" should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication inside two elements. For those skilled in the art, the above terms can be more specifically understood in the more specific meaning of the embodiments of the present application.

[0037] The English abbreviations involved in the present application are explained as follows:

[0038] PDMS: Polydimethylsiloxane, polydimethylsiloxane.

[0039] As shown in Figures 1-2 A monolayer plasmonic structure dual-parameter terahertz device according to an embodiment of the present application includes a dielectric substrate 1, metal electrodes (not shown in the figure) and a sequence detection material 5.

[0040] The metal electrodes are at least three, and the number of the sequence detection material 5 is one less than the number of the metal electrodes.

[0041] The plurality of metal electrodes are arranged in sequence along a first direction X on the dielectric substrate 1.

[0042] The sequence detection material 5 is made of a monolayer two-dimensional crystal.

[0043] The sequence detection material 5 includes a plurality of sequence strips 51 and connecting portions 52 arranged at both ends of the sequence strips 51, the sequence strips 51 are sequentially connected by a plurality of sequence units 511 of the same shape, and the plurality of sequence strips 51 are sequentially distributed along a second direction Y on the dielectric substrate 1.

[0044] The shape of the sequence unit 511 of each sequence detection material 5 is different.

[0045] The connecting portions 52 of each sequence detection material 5 arranged at both ends of the sequence strip 51 are respectively connected to two adjacent metal electrodes in the first direction X.

[0046] Among them, the first direction X and the second direction Y are perpendicular to each other.

[0047] It should be noted that the single-atom layer two-dimensional crystal is processed into a plasmonic resonance sequence detection material 5, the sequence detection material 5 includes a plurality of sequence strips 51 and a connecting portion 52 arranged at both ends of the sequence strip 51, the sequence strip 51 is connected by a plurality of sequence units 511 of the same shape, and the plurality of sequence strips 51 are sequentially distributed along the second direction Y on the dielectric substrate 1. The connecting portion 52 at both ends of each sequence detection material 5 is connected to the adjacent two metal electrodes in the first direction X to form a series structure. Since the shapes of the sequence units 511 of each sequence detection material 5 are different, the sequence detection material 5 composed of sequence units 511 of different shapes can detect different parameters of terahertz. Therefore, the terahertz device composed of a plurality of sequence detection materials 5 in series can detect a plurality of parameters of terahertz.

[0048] When the single-atom layer plasmonic sequence dual-parameter terahertz device is placed in a terahertz electromagnetic field, the plasmonic effect of the sequence detection material 5 can enhance the interaction between the sequence detection material 5 and the terahertz electromagnetic field and enhance the absorption capacity of the terahertz. Further, the heat carriers are generated inside the sequence detection material 5, the heat carriers move directionally under the temperature gradient by the Seebeck effect and generate a photoelectric current, so as to realize the detection of the parameters of terahertz.

[0049] In the single-atom layer plasmonic sequence dual-parameter terahertz device, the plasmonic effect of the sequence detection material 5 can enhance the interaction between the sequence detection material 5 and the terahertz electromagnetic field and enhance the absorption capacity of the terahertz. Further, the device composed of a plurality of sequence detection materials 5 in series can detect a plurality of parameters of terahertz. Therefore, the single-atom layer plasmonic sequence dual-parameter terahertz device has the advantages of wide response spectrum, high response sensitivity, fast response speed and detection of a plurality of parameters of terahertz. Further, the size of the detector is small, the noise is small when working at room temperature, and the device is not limited to work in a low-temperature environment.

[0050] Referring to Figures 1-2 In a more specific embodiment, three metal electrodes are provided, which are a first metal electrode 2, a second metal electrode 3 and a third metal electrode 4, and the first metal electrode 2, the second metal electrode 3 and the third metal electrode 4 are arranged in sequence along the first direction X on the dielectric substrate 1.

[0051] The sequence detection material 5 is provided with two sequence detection materials 6 and 7, the shape of the sequence unit 511 of the first sequence detection material 6 is circular, the shape of the sequence unit 511 of the second sequence detection material 7 is rectangular, and the resonance frequencies of the sequence unit 511 of the first sequence detection material 6 and the sequence unit 511 of the second sequence detection material 7 are the same.

[0052] The connecting portions 52 at both ends of the first ordered structure detection material 6 are connected to the first metal electrode 2 and the second metal electrode 3 in the first direction X, respectively, and the connecting portions 52 at both ends of the second ordered structure detection material 7 are connected to the second metal electrode 3 and the third metal electrode 4 in the first direction X, respectively.

[0053] It should be noted that the circular ordered structure units 511 of the first ordered structure detection material 6 and the rectangular ordered structure units 511 of the second ordered structure detection material 7 have different sensitivities to polarization, so when the resonance frequencies of the circular ordered structure units 511 of the first ordered structure detection material 6 and the rectangular ordered structure units 511 of the second ordered structure detection material 7 are the same, the detection of the terahertz intensity and polarization double parameters can be realized at the same frequency.

[0054] The resonance frequency of the circular ordered structure unit 511 is related to the diameter of the circle, and the resonance frequency of the rectangular ordered structure unit 511 is related to the length / width of the rectangle. The same resonance frequency can be realized by adjusting the size of the circular ordered structure unit 511 and the rectangular ordered structure unit 511 in the two ordered structure detection materials 5.

[0055] Referring to Figures 1-2 In a more specific embodiment, the duty cycle of the first ordered structure detection material 6 and the second ordered structure detection material 7 is 1:1.

[0056] It should be noted that when the duty cycle of the first ordered structure detection material 6 and the second ordered structure detection material 7 is 1:1, the absorption capacity of the terahertz is the strongest.

[0057] Referring to Figure 3 In a more specific embodiment, the shapes of the ordered structure units 511 of the plurality of ordered structure detection materials 5 are circles with different diameters, and the resonance frequencies of the ordered structure units 511 of each ordered structure detection material 5 are different.

[0058] It should be noted that the shapes of the ordered structure units 511 of the plurality of ordered structure detection materials 5 are circles with different diameters, and the resonance frequencies of the ordered structure units 511 of each ordered structure detection material 5 are different, but since the ordered structure units 511 of the ordered structure detection materials 5 are all circles, the sensitivity to polarization is the same, so the detection of the terahertz intensity and frequency double parameters can be realized at the same polarization, and the number of frequencies that can be measured is the same as the number of ordered structure detection materials 5.

[0059] Referring to Figures 1-2 In a more specific embodiment, the ordered structure detection material 5 is prepared by a micro-nano processing process from a single-atom-layer two-dimensional crystal.

[0060] It should be noted that the single-atom-layer two-dimensional crystal is processed by a micro-nano processing process, and the ordered structure detection material 5 with more accurate shape can be processed.

[0061] Referring toFigures 1-2 In a more specific embodiment, the dielectric substrate 1 is any one of a sapphire substrate, a quartz substrate and a silicon-on-insulator substrate containing silicon oxide.

[0062] It should be noted that the dielectric substrate 1 is selected to be an insulating dielectric substrate with nanoscale flatness and as few dangling bonds as possible, and the thermal conductivity coefficient is required to be relatively small, such as a sapphire substrate, a quartz substrate and a silicon-on-insulator substrate containing silicon oxide, so as to avoid the influence of the dielectric substrate 1 by high temperature in the process.

[0063] Referring to Figure 4 The preparation method of the monolayer polariton sequence bi-parameter terahertz device according to the embodiment of the present application comprises the following steps:

[0064] S1: forming a metal electrode film on the dielectric substrate 1, and then using a stripping process to manufacture a plurality of metal electrodes arranged in sequence along the first direction X;

[0065] S2: separating the monolayer two-dimensional crystal 8 of the plurality of monolayer two-dimensional materials from the material substrate, and transferring the plurality of monolayer two-dimensional crystals 8 to the dielectric substrate 1, wherein the two ends of each monolayer two-dimensional crystal 8 are connected to the two adjacent metal electrodes in the first direction X;

[0066] S3: using a micro-nano processing process to process the monolayer two-dimensional crystal 8 to form the sequence detection material 5.

[0067] In a more specific embodiment, S2 specifically comprises:

[0068] S21: spin coating a polystyrene film on the surface of the plurality of monolayer two-dimensional materials, and the monolayer two-dimensional crystal 8 of the monolayer two-dimensional material is bonded to the polystyrene film, so that the monolayer two-dimensional crystal 8 is separated from the material substrate;

[0069] S22: using a high polymer PDMS film to bond the polystyrene film to form a composition, and then using a transfer device to transfer the composition to the dielectric substrate 1, and removing the high polymer PDMS film and the polystyrene film, so as to leave the plurality of monolayer two-dimensional crystals 8 on the dielectric substrate 1 plated with the metal electrodes, and the two ends of each monolayer two-dimensional crystal 8 are connected to the two adjacent metal electrodes, respectively;

[0070] Referring to Figure 4 In a more specific embodiment, the preparation method of the monolayer polariton sequence bi-parameter terahertz device comprises the following steps:

[0071] S1: clean the medium substrate 1 with acetone, alcohol and pure water in sequence, dry the medium substrate, spin the photoresist on the first surface of the cleaned medium substrate 1, prepare the electrode pattern through exposure, and use electron beam evaporation, magnetron sputtering or thermal evaporation to evaporate the metal electrode layer on the sample surface after the previous photoetching, evaporate 5-10 nm of titanium and 50-200 nm of gold to form a metal electrode film, and then use the stripping process to manufacture a plurality of metal electrodes arranged in sequence along the first direction X;

[0072] S21: spin the polystyrene film on the surface of the plurality of monolayer two-dimensional materials, the monolayer two-dimensional crystal 8 of the monolayer two-dimensional material is bonded with the polystyrene film, so that the monolayer two-dimensional crystal 8 is separated from the material substrate;

[0073] S22: use the high-molecular polymer PDMS film to bond the polystyrene film to form a composition, use the transfer device to transfer the composition to the medium substrate 1, remove the high-molecular polymer PDMS film and the polystyrene film, and leave the plurality of monolayer two-dimensional crystals 8 on the medium substrate 1 coated with the metal electrode, and the two ends of each monolayer two-dimensional crystal 8 are connected to the two adjacent metal electrodes, respectively.

[0074] S3: use the micro-nano processing process including the steps of surface spin photoresist, exposure, etching, stripping and high-temperature annealing to process the monolayer two-dimensional crystal 8 to prepare the sequence structure detection material 5.

[0075] It should be noted that the monolayer two-dimensional material is a polariton two-dimensional material including graphene;

[0076] In step S2, the polystyrene film is used to separate the monolayer two-dimensional crystal 8 and the material substrate, and the separation method is gentle and will not damage the monolayer two-dimensional crystal 8.

[0077] The working process of the application is as follows: the monolayer two-dimensional crystal is processed into a sequence structure detection material 5 with polariton resonance, the sequence structure detection material 5 includes a plurality of sequence structure strips 51 and a connecting part 52 arranged at the two ends of the sequence structure strip 51, the sequence structure strip 51 is connected by a plurality of sequence structure elements 511 with the same shape, a plurality of sequence structure strips 51 are arranged in sequence along the second direction Y on the medium substrate 1, and the connecting parts at the two ends of each sequence structure detection material 5 are connected to the two adjacent metal electrodes in the first direction X to form a series structure, since the shapes of the sequence structure elements 511 of each sequence structure detection material 5 are different, and the sequence structure detection material 5 composed of sequence structure elements 511 with different shapes can detect different parameters of terahertz, and therefore the terahertz device formed by the series connection of a plurality of sequence structure detection materials 5 can detect a plurality of parameters of terahertz;

[0078] When the monolayer plasmonic sequence two-parameter terahertz device is placed in a terahertz electromagnetic field, the plasmonic effect of the sequence detection material 5 can enhance the interaction between the sequence detection material 5 and the terahertz electromagnetic field and enhance the absorption capacity of the terahertz, and then generate hot carriers in the sequence detection material 5, the hot carriers move directionally under the temperature gradient by the Seebeck effect and generate a photocurrent, so as to realize the detection of the parameters of the terahertz.

[0079] In summary, the embodiment of the present application provides a monolayer plasmonic sequence two-parameter terahertz device and a preparation method, since the plasmonic effect of the sequence detection material 5 can enhance the interaction between the sequence detection material 5 and the terahertz electromagnetic field and enhance the absorption capacity of the terahertz, and the multiple sequence detection materials 5 are connected in series to form the device, which can detect multiple parameters of the terahertz. Therefore, the monolayer plasmonic sequence two-parameter terahertz device has the advantages of wide response spectrum, high response sensitivity, fast response speed and detection of multiple parameters of the terahertz, and the size of the detector is small, the noise is small when working at room temperature, and it is not limited to low-temperature environment.

[0080] The above only describes the preferred embodiments of the present application, and it should be pointed out that for ordinary skilled in the art, without departing from the technical principles of the present application, a number of improvements and replacements can be made, and these improvements and replacements should be considered as the protection scope of the present application.

Claims

1. A single atomic layer polariton-ordered dual-parameter terahertz device, characterized in that: include: Dielectric substrate, metal electrodes and sequence detection materials; There are at least three metal electrodes, and the number of the sequence detection materials is one less than the number of the metal electrodes; The plurality of metal electrodes are arranged in sequence along a first direction on the dielectric substrate; The material of the sequence detection material is a single atomic layer two-dimensional crystal; The sequence detection material includes a plurality of sequence strips and connecting parts provided at both ends of the sequence strips. The sequence strips are formed by sequentially connecting a plurality of sequence elements of the same shape. The plurality of sequence strips are sequentially distributed along the second direction on the dielectric substrate. The shape of the sequence unit of each of the sequence detection materials is different; The connection parts of each sequence detection material provided at both ends of the sequence strip are respectively connected to two adjacent metal electrodes in the first direction; The first direction and the second direction are perpendicular to each other.

2. The single atomic layer polariton-ordered dual-parameter terahertz device according to claim 1, characterized in that: There are three metal electrodes, namely a first metal electrode, a second metal electrode and a third metal electrode, and the first metal electrode, the second metal electrode and the third metal electrode are arranged in sequence along a first direction on the dielectric substrate; There are two sequence structure detection materials, namely a first sequence structure detection material and a second sequence structure detection material, wherein the shape of the sequence structure unit of the first sequence structure detection material is circular, and the shape of the sequence structure unit of the second sequence structure detection material is rectangular, and the resonance frequency of the sequence structure unit of the first sequence structure detection material and the sequence structure unit of the second sequence structure detection material is the same; The connecting parts at both ends of the first sequence detection material are respectively connected to the first metal electrode and the second metal electrode in the first direction, and the connecting parts at both ends of the second sequence detection material are respectively connected to the second metal electrode and the third metal electrode in the first direction.

3. The single atomic layer polariton-ordered dual-parameter terahertz device according to claim 2, characterized in that: The duty ratio of the first sequence detection material and the second sequence detection material is 1:

1.

4. The single atomic layer polariton-ordered dual-parameter terahertz device according to claim 1, characterized in that: The shape of the sequence elements of the plurality of sequence detection materials is a circle with different diameters, and the resonance frequency of each sequence element of the sequence detection material is different.

5. The single atomic layer polariton-ordered dual-parameter terahertz device according to claim 1, characterized in that: The structure detection material is prepared from a single atomic layer two-dimensional crystal through a micro-nano processing technology.

6. The single atomic layer polariton-ordered dual-parameter terahertz device according to claim 1, characterized in that: The dielectric substrate is any one of a sapphire substrate, a quartz substrate and an intrinsic silicon substrate containing silicon oxide.

7. A method for preparing a single atomic layer polariton-ordered dual-parameter terahertz device according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1: forming a metal electrode film on a dielectric substrate, and then using a lift-off process to manufacture a plurality of metal electrodes sequentially arranged along a first direction; S2: separating a plurality of single-atomic-layer two-dimensional crystals of a single-atomic-layer two-dimensional material from the material substrate, transferring the plurality of single-atomic-layer two-dimensional crystals onto the dielectric substrate, and connecting two adjacent metal electrodes at both ends of each single-atomic-layer two-dimensional crystal in a first direction; S3: Using micro-nano processing technology to process the single atomic layer two-dimensional crystal to form a structure detection material.

8. The preparation method according to claim 7, characterized in that S2 specifically includes: S21: spin-coating a polystyrene film on the surface of the plurality of single-atomic-layer two-dimensional materials, wherein the single-atomic-layer two-dimensional crystals of the single-atomic-layer two-dimensional materials are bonded to the polystyrene film, thereby separating the single-atomic-layer two-dimensional crystals from the material substrate; S22: Use a high molecular polymer PDMS film to bond a polystyrene film to form a composition, and then use a transfer device to transfer the composition to the dielectric substrate, remove the high molecular polymer PDMS film and the polystyrene film, and leave the multiple single atomic layer two-dimensional crystals on the dielectric substrate coated with metal electrodes, and the two ends of each single atomic layer two-dimensional crystal are respectively connected to two adjacent metal electrodes in the first direction.

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