Degumming and cleaning process after silicon carbide crystal cutting

Abstract

The invention provides a degumming and cleaning process after silicon carbide crystal cutting. The degumming and cleaning process comprises the following steps: 1) putting a cut silicon carbide wafer workpiece into a degumming tool; the silicon carbide wafer workpiece comprises a silicon carbide wafer, a resin cushion block and a metal supporting strip which are bonded and fixed through resin glue, and the degumming tool is used for supporting and fixing the metal supporting strip; 2) immersing the silicon carbide wafer and the resin cushion block in the degumming tool in the step 1) into an organic acid degumming solution, and degumming through ultrasonic oscillation to obtain a degummed silicon carbide wafer; and 3) carrying out ultrasonic cleaning on the silicon carbide wafer degummed in the step 2) by using a surfactant solution, then carrying out normal-temperature ultrasonic cleaning by using water, and drying. According to the silicon carbide wafer degumming device, automatic degumming of the silicon carbide wafer can be achieved, the problems of edge breakage, wafer cracking and surface scratching in the manual degumming process are solved, residual oil stains and the like on the surface of the silicon carbide wafer can be effectively cleaned, and the problem that residual glue and the like are left on the edge of the wafer after degumming is solved. The method is simple, convenient, safe and high in efficiency.

Description

Technical Field

[0001] The invention relates to the field of silicon carbide wide bandgap semiconductor multi-wire cutting, and in particular to a degumming and cleaning process after silicon carbide crystal cutting, specifically to realizing automatic degumming and effective cleaning after cutting. Background Art

[0002] Silicon carbide (SiC) is a representative of wide bandgap semiconductors, with a bandgap width three times that of silicon, a breakdown field strength 10 times that of silicon, and a thermal conductivity three times that of silicon. The theoretical withstand voltage of silicon carbide devices can reach 10 times that of silicon-based devices, and the switching frequency can reach 10 times that of silicon-based devices. Under the general trend of energy transformation, it has been widely used in new energy vehicles, aerospace, and power systems. Silicon carbide is a high-hardness and brittle material, its hardness is second only to diamond, and it is difficult to process. Whether a substrate with good morphology and excellent surface quality can be processed efficiently and with high yield is of great significance to the research and development of silicon carbide devices.

[0003] The processing technology of silicon carbide substrate mainly includes: crystal growth, grinding machine processing (flat grinding, cylindrical grinding), crystal rod bonding orientation, wafer cutting, marking chamfering, polishing, chemical mechanical planarization (CMP), and cleaning. Each of the above process steps affects the yield and output rate of the substrate product to a certain extent; among them, one method of wafer cutting is to place the wafer on a supporting substrate such as a wafer tray, which is pre-coated with resin glue, and then cut and other processes are performed. Debonding and cleaning is a post-processing step of cutting. Advanced processes can effectively reduce the risk of problems such as cracking, edge collapse and flower chips during debonding and cleaning. After the silicon carbide wafer is cut, the existing debonding and cleaning process usually puts the wafer tray and the wafer upside down into the debonding tank, softens the resin glue for a certain period of time, and then manually pushes back and forth along the plane direction of the wafer to separate the wafer from the wafer tray, and then washes it with clean water.

[0004] However, the manual handling process in this debonding and cleaning process increases the risk of chipping and cracking of the wafer, and residual glue will remain on the edge of the wafer. Summary of the invention

[0005] In view of this, the present invention provides a degumming and cleaning process after silicon carbide crystal cutting. Through the method of the present invention, silicon carbide wafers of different thicknesses, different sizes and different bonding methods can be automatically and safely degummed, which can reduce the risks of chip edge collapse and cracking, and solve the problem of residual glue remaining on the edge of the chip after degumming.

[0006] The present application provides a degumming and cleaning process for a silicon carbide crystal after cutting, comprising the following steps:

[0007] 1) placing the cut silicon carbide wafer workpiece into a debonding tool; the silicon carbide wafer workpiece comprises a silicon carbide wafer fixed by resin glue, a resin pad and a metal support bar, the resin pad is located between the silicon carbide wafer and the metal support bar, and the debonding tool is used to support and fix the metal support bar;

[0008] 2) immersing the silicon carbide wafer and the resin pad in the degumming tool of step 1) into an organic acid degumming solution, and degumming is performed by ultrasonic oscillation to obtain a degummed silicon carbide wafer;

[0009] 3) The silicon carbide wafer after degumming in step 2) is ultrasonically cleaned with a surfactant solution, then ultrasonically cleaned with water at room temperature, and dried to obtain the product.

[0010] In an embodiment of the present invention, the degumming tooling in step 1) includes a first support plate and a second support plate arranged in parallel and opposite to each other, which are connected and fixed by a supporting component, and a first support block and a second support block are respectively provided at corresponding positions of the first support plate and the second support plate, for supporting and fixing the metal support strip.

[0011] In an embodiment of the present invention, both the first support plate and the second support plate are provided with handles.

[0012] In an embodiment of the present invention, an arc-shaped baffle is provided between the first support plate and the second support plate, and a brush is provided on the surface of the arc-shaped baffle to prevent the wafer received by the arc-shaped baffle from falling over.

[0013] In an embodiment of the present invention, the temperature of the organic acid degumming solution in step 2) is 60-80° C., the ultrasonic oscillation frequency is 30-40 Hz, and the degumming time is 600-1200 s.

[0014] In an embodiment of the present invention, the organic acid degumming solution in step 2) is formed by adding 2-3% by volume of an organic acid to water at a temperature of 60-80° C., and the organic acid is selected from lactic acid, citric acid or oxalic acid.

[0015] In an embodiment of the present invention, the surfactant solution in step 3) is formed by adding 3-4% by volume of a surfactant to water at a temperature of 50-60°C; the ultrasonic frequency of ultrasonic cleaning using the surfactant solution is 30-40HZ.

[0016] In an embodiment of the present invention, the ultrasonic frequency of the room-temperature ultrasonic cleaning with water in step 3) is 30-40 Hz, and the cleaning time is 600-1200 s.

[0017] In an embodiment of the present invention, the drying in step 3) is performed at a temperature of 50-60° C. and a drying time of 120-300 seconds.

[0018] In an embodiment of the present invention, the silicon carbide wafer is an N-type or P-type doped silicon carbide crystal; the silicon carbide wafer workpiece is cut by a multi-wire sawing machine using diamond wires, oily cutting fluid and diamond powder.

[0019] Compared with the process of the prior art, the present invention adopts a metal support bar for fixing the cut silicon carbide wafer workpiece by a degumming tool, and immerses the silicon carbide wafer and the resin pad in an organic acid degumming solution, and degumming is performed by ultrasonic oscillation; then ultrasonic cleaning is performed with a surfactant solution, and then ultrasonic cleaning is performed with water at room temperature, and drying is performed. The present invention can not only realize the automatic degumming of the silicon carbide wafer, solve the problems of edge collapse, cracks and flowery surfaces in the process of manual degumming of the silicon carbide wafer, but also realize the effective cleaning of residual oil stains on the surface of the silicon carbide wafer, and solve the problems of residual glue remaining on the edge of the wafer and residual oil stains after degumming. The method of the present invention is simple, safe and efficient. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present invention and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without creative work.

[0021] Figure 1 This is a process flow chart of debonding and cleaning of silicon carbide crystals after cutting according to some embodiments of the present invention;

[0022] Figure 2 It is a schematic diagram of the structure of the degumming tooling used in a specific embodiment of the present invention;

[0023] Figure 3 It is a schematic diagram of the degumming process in a specific embodiment of the present invention;

[0024] Figure 4 The wafer after cleaning in Example 1 is compared with the wafer after manual degumming and water washing. DETAILED DESCRIPTION

[0025] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the technical scheme of the present invention is now described in detail below in conjunction with specific embodiments. The described embodiments are only a part of the embodiments of the present invention, rather than all of the embodiments.

[0026] The terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and need not be used to describe a specific order or sequential order. It should be understood that the terms used in this way can be interchangeable under appropriate circumstances, which is only to describe the distinction mode adopted by the objects of the same attributes when describing in the embodiments of the present application. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, so that the process, method, system, product or equipment comprising a series of units need not be limited to those units, but may include other units that are not clearly listed or inherent to these processes, methods, products or equipment.

[0027] The present invention provides a degumming and cleaning process for a silicon carbide crystal after cutting, comprising the following steps:

[0028] 1) placing the cut silicon carbide wafer workpiece into a debonding tool; the silicon carbide wafer workpiece comprises a silicon carbide wafer fixed by resin glue, a resin pad and a metal support bar, the resin pad is located between the silicon carbide wafer and the metal support bar, and the debonding tool is used to support and fix the metal support bar;

[0029] 2) immersing the silicon carbide wafer and the resin pad in the degumming tool of step 1) into an organic acid degumming solution, and degumming is performed by ultrasonic oscillation to obtain a degummed silicon carbide wafer;

[0030] 3) The silicon carbide wafer after degumming in step 2) is ultrasonically cleaned with a surfactant solution, then ultrasonically cleaned with water at room temperature, and dried to obtain the product.

[0031] The method of the invention can automatically and safely debond silicon carbide wafers of different thicknesses, different sizes and different bonding methods, and the method is simple, safe and highly efficient.

[0032] See also Figure 1 , Figure 1 The degumming and cleaning process flow chart of the silicon carbide crystal after cutting in some embodiments of the present invention includes the following five process steps, namely, cutting and sawing, degumming, plugging after degumming, cleaning and drying.

[0033] In the embodiment of the present invention, the cut silicon carbide wafer workpiece is placed in a debonding tool, wherein the silicon carbide wafer workpiece includes: a silicon carbide wafer fixed by resin glue, a resin pad and a metal support strip. In order to ensure that the wafer is cut through, the silicon carbide wafer workpiece can be divided into three parts: a metal support strip (such as an iron support), a resin pad and a wafer, and these three parts are bonded and connected with resin glue. In the embodiment of the present invention, silicon carbide wafers of different thicknesses (thickness can be 350-700mm), different sizes (such as 4 inches, 6 inches, 8 inches) and different bonding methods can be debonded; the silicon carbide wafers in some embodiments are 4H crystal type, 6-inch N-type doped silicon carbide crystals, and in other embodiments can be P-type doped silicon carbide crystals. The silicon carbide wafer workpiece can be cut by a multi-wire cutting machine, and diamond wire and oily cutting fluid are combined with diamond powder; the resin glue component can be epoxy resin AB glue, etc.

[0034] The resin pad is made by mixing resin powder and its additives. The resin powder is a thermosetting resin material such as bisphenol A epoxy resin. The additives include but are not limited to polyamine curing agents, fillers (such as microbead fibers, etc.), toughening agents, and thickeners, which are all common components of resin products. The resin pad can be made by yourself or commercially available. The resin pad has the strength and thickness of conventional resin support materials in the industry, and can prevent the bonded metal support strip from being damaged while the wafer bonded by the resin glue is cut through. The metal support strip can be made of iron, which mainly supports the silicon carbide wafer during the cutting process.

[0035] In an embodiment of the present invention, the debonding tool is used to support the metal support bar that fixes the silicon carbide wafer workpiece. Figure 2 , Figure 2 It is a schematic diagram of the degumming tooling structure used in a specific embodiment of the present invention. Figure 2 In the figure, 11 is a first support plate, 12 is a second support plate, 13 is a first support block, 14 is a second support block, 2 is a support rod, 3 is an arc-shaped baffle, 41 is a first handle, and 42 is a second handle.

[0036] The degumming tooling described in the specific embodiment of the present invention comprises: a first support plate 11 and a second support plate 12 arranged in parallel and opposite to each other, and a first support block 13 and a second support block 14 for supporting and fixing the metal support strip are respectively arranged at the corresponding positions of the two. The first support plate 11 and the second support plate 12 are connected and fixed by a support rod 2, and an arc-shaped baffle 3 with a brush on the surface is preferably arranged between the two, which is used to stably receive the wafer after degumming, and can also play a supporting and buffering role.

[0037] The first support plate 11 and the second support plate 12 have the same shape and structure, and generally have a rectangular flat plate structure, and the metal support bar is stably supported by the first support block 13 and the second support block 14 arranged on the same. The first support plate 11, the second support plate 12 and the support rod 2 play a supporting role in the overall structure of the degumming tooling. The support rod 2 is arranged between the first support plate 11 and the second support plate 12, and as a supporting component, it mainly fixes and connects the two support plates.

[0038] Moreover, an arc-shaped baffle plate 3 is arranged between the first support plate 11 and the second support plate 12, and a short-bristled brush is installed on its surface; after the wafer is degummed, it is received by the arc-shaped baffle plate 3, and the brush can prevent the received wafer from tipping over. In addition, the first support plate 11 and the second support plate 12 are preferably provided with a first handle 41 and a second handle 42, respectively, and the structures and setting positions of the two are consistent, which makes it more convenient to take and carry the degumming tooling. The embodiments of the present invention have no special restrictions on the materials and dimensions of components such as support plates, support rods, and arc-shaped baffles, as long as they are acid-resistant and adaptable to the size of the crystal support and wafer. In some embodiments, the degumming tooling includes two support rods with the same structure; depending on the size of the wafer to be placed, the number of arc-shaped baffles can be set to 2-8.

[0039] like Figure 3 As shown, the cut silicon carbide wafer workpiece includes a silicon carbide wafer 5, a resin pad 6 and a metal support bar 7. The resin pad 6 connects the silicon carbide wafer 5 and the metal support bar 7 through a resin glue (not shown in the figure). The metal support bar 7 is specifically an iron support (bar). During the cutting process, the iron support is fixed in the cutting chamber. Between the iron support and the wafer is a resin pad of resin type, which will be cut at the end of the cutting to ensure that the crystal is cut through and prevent the iron support from being cut. The embodiment of the present invention places the cut silicon carbide wafer workpiece into a degumming tool, and supports it through a first support plate 11, a second support plate 12 and support blocks arranged thereon. The embodiment of the present invention immerses the silicon carbide wafer and the resin pad in the degumming tool into an organic acid degumming solution, and degumming is performed by ultrasonic oscillation. Figure 3 The degumming solution and ultrasonic equipment are not shown in the figure. Specifically, the degumming solution is added to the wafer and to the position near the middle of the resin pad without contacting the iron support during degumming.

[0040] In the embodiment of the present invention, the degumming tooling containing the silicon carbide wafer workpiece is placed in an ultrasonic machine, and the ultrasonic equipment is equipped with an organic acid degumming solution at a certain temperature, and degumming is performed by ultrasonic oscillation. The temperature of the organic acid degumming solution is preferably 60-80°C, and is specifically formed by adding 2-3% of organic acid by volume to water at a temperature of 60-80°C (preferably 80% concentration of lactic acid); the added organic acid can be selected from lactic acid, citric acid or oxalic acid, which is convenient for removing resin glue. The ultrasonic equipment involved in the embodiment of the present invention is an ultrasonic machine well known to those skilled in the art, and the ultrasonic oscillation frequency is preferably 30-40HZ, and the degumming time can be 600-1200s, further 700-1100s or 800-1000s; the liquid level in the ultrasonic machine is added to the crystal but not to the iron support, so that the cut silicon carbide wafer and the resin pad are degummed, while the resin pad and the iron support are not degummed.

[0041] After degumming is completed, the embodiment of the present invention takes out the silicon carbide wafer, and at the same time, the separated resin pad and iron support can be taken out, and the silicon carbide wafer is placed in a cleaning plug. The embodiment of the present invention sequentially cleans the silicon carbide wafer with the plug by ultrasonic cleaning with a surfactant solution and by ultrasonic cleaning with water at room temperature.

[0042] Among them, the ultrasonic cleaning with surfactant solution can be performed twice, that is, the surfactant solution is placed in two ultrasonic machines for cleaning to ensure the cleaning effect; for example, a single ultrasonic machine is used for cleaning for 60 minutes, and its effect is not as good as the effect of two ultrasonic machines for cleaning for 30 minutes each. The temperature of water in the two ultrasonic machines is 50-60°C, and a surfactant with a volume ratio of 3-4% can be added to form a surfactant solution. The surfactant is mainly carbonyl isomerized alcohol ethoxy non-ionic type, fatty alcohol alkoxy non-ionic type, preferably including one or more of complexing agent, solubilizer, hydrogen peroxide, potassium hydroxide, and mainly has a certain alkalinity (pH value can be 13-14); commercially available products can be used, such as Changzhou Junhe JH-1016 solar silicon wafer cleaning agent.

[0043] The ultrasonic frequency of the ultrasonic cleaning with the surfactant solution is preferably 30-40HZ, and the time of the two cleanings can be 1200-1800s respectively. In the embodiment of the present invention, a third ultrasonic machine is used, and only normal temperature water (tap water can be used, and the temperature is 50-70°C) is added without adding a surfactant, and the overflow function is further turned on to remove the foam generated by the cleaning; the third ultrasonic machine uses water for normal temperature ultrasonic cleaning, the ultrasonic frequency is 30-40HZ, and the cleaning time is 600-1200s.

[0044] In the embodiment of the present invention, the cleaned wafer is taken out from the normal temperature water and dried in a dryer to obtain a debonded and cleaned silicon carbide wafer. The temperature of the dryer can be 50-60° C., and the drying time is 120-300 seconds, and further 150-250 seconds.

[0045] The degumming and cleaning process after silicon carbide crystal cutting proposed in the embodiment of the present invention has a good yield rate, solves the problems of edge collapse, cracking and surface scratches during the degumming process of silicon carbide wafers, solves the problem of residual glue remaining on the edge of the wafer after degumming, and also solves the problem of residual oil on the surface of the wafer after a single cleaning under the same cleaning time.

[0046] In order to better illustrate the present invention, the following examples are further illustrated. In the examples, all raw reagents and materials are commercially available, and the experimental methods without specific experimental conditions are conventional methods and conditions well known in the art.

[0047] The degumming tooling used in the embodiment of the present invention includes: a first support plate and a second support plate arranged in parallel and opposite to each other, the two are connected and fixed by two support rods, and the first support plate and the second support plate are respectively provided with a first support block and a second support block at corresponding positions, which are used to support and fix the iron support. Four arc-shaped baffles are arranged between the first support plate and the second support plate, and brushes are installed on the surfaces of the arc-shaped baffles, which are mainly used to prevent the wafers received by the arc-shaped baffles from tipping over. In addition, the first support plate and the second support plate are also provided with handles.

[0048] Example 1

[0049] The wafer used in this embodiment is a 4H crystal type, 6-inch N-type doped silicon carbide crystal; a multi-wire saw is used for cutting with diamond wire and oily cutting fluid with diamond powder, and the resin glue is epoxy resin AB glue.

[0050] The steps for implementing the degumming and cleaning process after cutting are as follows:

[0051] Place the cut and sawed silicon carbide wafers into the degumming tooling and transport them to the degumming station by a transfer vehicle.

[0052] The degumming tooling with the silicon carbide wafer workpiece is placed in an ultrasonic cleaning machine filled with an organic acid degumming solution, and degumming is performed by ultrasonic oscillation. The organic acid degumming solution is formed by adding 3% by volume of lactic acid (concentration is 80%, Jindan lactic acid) to warm water (80°C); the ultrasonic frequency is 40HZ, the degumming time is 1200s; the water level in the ultrasonic machine is added to cover the crystal but not to the iron support.

[0053] After debonding is completed, the silicon carbide wafer is taken out and placed in a cleaning plug.

[0054] The silicon carbide wafers with the plug installed were placed in three ultrasonic machines for cleaning. The first two ultrasonic machines were added with surfactants, and the third ultrasonic machine was added with tap water only. The third ultrasonic machine was turned on with the overflow function to remove the foam generated by the cleaning. The water temperature in the first two ultrasonic machines was 50°C, and a surfactant (alkaline surfactant, Changzhou Junhe JH-1016 solar silicon wafer cleaning agent) was added at a volume ratio of 4%. The third ultrasonic machine used normal temperature water without surfactant, and the ultrasonic frequency was 40HZ. The cleaning time of the first two ultrasonic machines was 1800s each, and the cleaning time of the third ultrasonic machine was 300s.

[0055] The cleaned wafers were taken out and placed in a dryer for drying at a temperature of 60° C. for 300 s.

[0056] Figure 4 The figure shows the comparison between the wafer after cleaning and the wafer after manual degumming and water washing. The left side shows the degumming and water washing effect of Example 1, and the right side shows the manual degumming and water washing effect. The comparison shows that the cleaning effect of the method of the present invention is better and the cleaning time is significantly shortened.

[0057] Example 2

[0058] The wafer used in this embodiment is a 4H crystal type, 6-inch P-type doped silicon carbide crystal; a multi-wire saw is used for cutting using diamond wire and oily cutting fluid with diamond powder, and the resin glue is epoxy resin AB glue.

[0059] The steps for implementing the degumming and cleaning process after cutting are as follows:

[0060] Place the cut and sawed silicon carbide wafers into the degumming tooling and transport them to the degumming station by a transfer vehicle.

[0061] The degumming tool with the silicon carbide wafer workpiece is placed in an ultrasonic cleaning machine filled with an organic acid degumming solution, and degumming is performed by ultrasonic oscillation. The organic acid degumming solution is formed by adding 3% by volume of (80% concentration, Jindan lactic acid) to warm water (70°C); the ultrasonic frequency is 30HZ, the degumming time is 700s; the water level in the ultrasonic machine is added to cover the crystal but not to the iron support.

[0062] After debonding is completed, the silicon carbide wafer is taken out and placed in a cleaning plug.

[0063] The silicon carbide wafer with the plug installed was sequentially placed in three ultrasonic machines for cleaning. The first two ultrasonic machines were added with surfactants, and the third ultrasonic machine was added with tap water only. The third ultrasonic machine was turned on with the overflow function, in order to remove the foam generated by the cleaning. The water temperature in the first two ultrasonic machines was 60° C., and a surfactant of 3% by volume was added (the same as in Example 1). The third ultrasonic machine used normal temperature water without surfactant, and the ultrasonic frequency was 40 Hz. The cleaning time of the first two ultrasonic machines was 1800 s each, and the cleaning time of the third ultrasonic machine was 150 s.

[0064] The cleaned wafer is taken out and placed in a drying machine for drying at a temperature of 60° C. for 200 seconds. The cleaning effect is similar to that of Example 1.

[0065] It can be seen from the above embodiments that the embodiments of the present invention solve the problems of edge collapse and cracking during the debonding process of silicon carbide wafers, solve the problem of residual glue remaining on the edge of the wafer after debonding, and achieve efficient cleaning of oil stains on the surface of silicon carbide wafers.

[0066] The present invention is described above by way of example. It should be noted that, without departing from the core of the present invention, any simple deformation, modification or other equivalent replacement that can be made by those skilled in the art without inventive effort falls within the protection scope of the present invention.

Claims

1. A degumming and cleaning process after cutting of silicon carbide crystals, characterized in that: The following steps are involved: 1) placing the cut silicon carbide wafer workpiece into a debonding tool; the silicon carbide wafer workpiece comprises a silicon carbide wafer fixed by resin glue, a resin pad and a metal support bar, the resin pad is located between the silicon carbide wafer and the metal support bar, and the debonding tool is used to support and fix the metal support bar; 2) immersing the silicon carbide wafer and the resin pad in the degumming tool of step 1) into an organic acid degumming solution, and degumming is performed by ultrasonic oscillation to obtain a degummed silicon carbide wafer; 3) The silicon carbide wafer after degumming in step 2) is ultrasonically cleaned with a surfactant solution, then ultrasonically cleaned with water at room temperature, and dried to obtain the product.

2. The degumming and cleaning process after cutting of silicon carbide crystal according to claim 1, characterized in that: The degumming tooling in step 1) comprises a first support plate and a second support plate arranged in parallel and opposite to each other, which are connected and fixed by a support component, and a first support block and a second support block are respectively provided at corresponding positions of the first support plate and the second support plate for supporting and fixing the metal support strip.

3. The degumming and cleaning process after cutting of silicon carbide crystal according to claim 2, characterized in that: The first support plate and the second support plate are both provided with handles.

4. The degumming and cleaning process after cutting of silicon carbide crystal according to claim 2, characterized in that: An arc-shaped baffle is provided between the first support plate and the second support plate, and a brush is provided on the surface of the arc-shaped baffle to prevent the wafer received by the arc-shaped baffle from falling over.

5. The degumming and cleaning process after cutting of silicon carbide crystal according to any one of claims 1 to 4, characterized in that: In step 2), the temperature of the organic acid degumming solution is 60-80° C., the ultrasonic oscillation frequency is 30-40 Hz, and the degumming time is 600-1200 s.

6. The degumming and cleaning process after cutting of silicon carbide crystal according to claim 5, characterized in that: The organic acid degumming solution in step 2) is formed by adding 2-3% by volume of organic acid to water at a temperature of 60-80° C., and the organic acid is selected from lactic acid, citric acid or oxalic acid.

7. The degumming and cleaning process after cutting of silicon carbide crystal according to any one of claims 1 to 4, characterized in that: In step 3), the surfactant solution is formed by adding 3-4% by volume of a surfactant to water at a temperature of 50-60° C.; the ultrasonic frequency of the ultrasonic cleaning using the surfactant solution is 30-40 Hz.

8. The degumming and cleaning process after cutting of silicon carbide crystal according to claim 7, characterized in that: The ultrasonic frequency of the room temperature ultrasonic cleaning with water in step 3) is 30-40 Hz, and the cleaning time is 600-1200 s.

9. The degumming and cleaning process after cutting of silicon carbide crystal according to claim 8, characterized in that: The drying in step 3) is carried out at a temperature of 50-60° C. and a drying time of 120-300 seconds.

10. The degumming and cleaning process after cutting of silicon carbide crystal according to any one of claims 1 to 4, characterized in that: The silicon carbide wafer is an N-type or P-type doped silicon carbide crystal; the silicon carbide wafer workpiece is cut by a multi-wire sawing machine using diamond wires, oily cutting fluid and diamond powder.

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