Sewage treatment system and method and electronic equipment

Abstract

The invention discloses a sewage treatment system and method and electronic equipment, and relates to the technical field of sewage treatment. The system comprises a distributed plasma control module, a water information acquisition module and a plasma treatment module, the plasma treatment module comprises a negative plate and plasma sewage treatment assemblies arranged in an array mode, and each plasma sewage treatment assembly comprises a high-voltage power supply, a low-temperature plasma generation unit and a vertical movement module. An electrode in the low-temperature plasma generation unit is connected with the positive electrode of the high-voltage power supply and is opposite to the negative plate, and the negative plate is connected with the negative electrode of the high-voltage power supply; the distributed plasma control module is respectively connected with the water information acquisition module and each vertical motion module, and is used for determining a first target control parameter of each vertical motion module according to sewage information acquired by the water information acquisition module before and after treatment; and controlling the corresponding vertical motion module to drive the corresponding low-temperature plasma generation unit to vertically move so as to adjust the plasma processing density.

Description

Technical Field

[0001] The present invention relates to the technical field of sewage treatment, and in particular to a sewage treatment system, method and electronic equipment. Background Art

[0002] At present, with the continuous deepening of human production and life activities, the complexity of various industrial and domestic sewage has increased, especially organic sewage, which poses a huge challenge to the treatment of organic sewage due to its complex types, slow transformation of pollutants and long treatment cycle.

[0003] The organic wastewater treatment in related technologies mainly includes physical treatment, chemical treatment, biological treatment, physicochemical treatment and plasma wastewater treatment. Among them, physical treatment method: using physical action to separate suspended matter in wastewater, such as screening, sedimentation, flotation, filtration, etc. Chemical treatment method: using chemical reactions to separate and recover pollutants in wastewater, such as neutralization, coagulation, electrolysis, oxidation-reduction, etc. Biological treatment method: using the life activities of microorganisms to degrade organic matter, divided into aerobic biological treatment (such as activated sludge method) and anaerobic biological treatment. Physical and chemical method: combining physical and chemical methods to treat wastewater, such as adsorption, ion exchange, etc.

[0004] However, the sewage treatment methods in the related art have a single sewage treatment process and are difficult to meet the needs. Summary of the invention

[0005] The present invention aims to solve one of the technical problems in the related art at least to a certain extent. To this end, the first object of the present invention is to provide a sewage treatment system to achieve high-performance sewage treatment.

[0006] The second object of the present invention is to provide a sewage treatment method.

[0007] A third objective of the present invention is to provide an electronic device.

[0008] To achieve the above-mentioned purpose, a first embodiment of the present invention proposes a sewage treatment system, the system comprising: a distributed plasma control module, a water information collection module and a plasma processing module, the plasma processing module comprising a negative plate and an array-arranged plasma sewage treatment component, the plasma sewage treatment component comprising a high-voltage power supply, a low-temperature plasma generating unit and a vertical motion module, the electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative plate, and the negative plate is connected to the negative electrode of the high-voltage power supply; wherein the distributed plasma control module is respectively connected to the water information collection module and each of the vertical motion modules, and is used to determine the first target control parameter of each vertical motion module according to the sewage information before treatment and the sewage information after treatment collected by the water information collection module, and control the corresponding vertical motion module to drive the corresponding low-temperature plasma generating unit to move vertically according to the first target control parameter to adjust the plasma treatment density.

[0009] In addition, the sewage treatment system according to the embodiment of the present invention may also have the following additional technical features:

[0010] In one embodiment of the present invention, the distributed plasma control module is also connected to each of the high-voltage power supplies, and is also used to determine the second target control parameters of each of the high-voltage power supplies based on the sewage information before treatment and the sewage information after treatment, and adjust the power supply parameters of the corresponding high-voltage power supply according to the second target control parameters to adjust the plasma treatment intensity.

[0011] In one embodiment of the present invention, the plasma processing module also includes a spray device, which is arranged on one side of the sewage treatment area, and the sewage treatment area is the area between the array plasma sewage treatment component and the negative plate; wherein the distributed plasma control module is also connected to the spray device respectively, and is also used to determine the third target control parameter of the spray device according to the sewage information before treatment and the sewage information after treatment, and control the flow rate of the sewage sprayed into the sewage treatment area by the spray device according to the third target control parameter.

[0012] In one embodiment of the present invention, the plasma wastewater treatment component also includes a horizontal motion module; wherein, the distributed plasma control module is also connected to each of the vertical motion modules respectively, and is used to determine the fourth target control parameter of each horizontal motion module according to the wastewater information before treatment and the wastewater information after treatment collected by the water information collection module, and control the corresponding horizontal motion module according to the fourth target control parameter to drive the corresponding low-temperature plasma generating unit to move horizontally, so as to adjust the plasma treatment intensity.

[0013] In one embodiment of the present invention, the plasma processing module also includes a life detection module, which is respectively connected to the distributed plasma control module and the electrodes in each of the low-temperature plasma generating units, and is used to detect the life of each of the electrodes and transmit the detected life to the distributed plasma control module; wherein the distributed plasma control module is also used to issue a prompt message to prompt the replacement of the corresponding low-temperature plasma generating unit when the life reaches a preset life threshold.

[0014] In one embodiment of the present invention, the system also includes: a temperature control module connected to the distributed plasma control module, used to control the temperature of the sewage before treatment under the control of the distributed plasma control module; a thermal management module connected to the temperature control module and the plasma processing module, used to adjust the temperature of the temperature control module and the plasma processing module.

[0015] In one embodiment of the present invention, the system further includes: a power supply module connected to the plasma processing module and the distributed plasma control module, and configured to supply power to the plasma processing module and the distributed plasma control module.

[0016] In one embodiment of the present invention, the distributed plasma control module further includes: a storage device for storing a pretreatment scheme, wherein the pretreatment scheme includes a scheme for controlling the temperature control module and the plasma processing module generated by the distributed plasma control module according to the sewage information.

[0017] To achieve the above-mentioned purpose, a second aspect of the present invention provides a sewage treatment method, which is used in the above-mentioned sewage treatment system. The method includes: collecting sewage information to obtain sewage information before treatment and sewage information after treatment; controlling the vertical movement of a low-temperature plasma generating unit according to the sewage information before treatment and the sewage information after treatment to adjust the plasma treatment density, and using the plasma generated by the low-temperature plasma generating unit to treat sewage.

[0018] To achieve the above objectives, a third aspect of the present invention proposes an electronic device, comprising a memory, a processor, and a computer program stored in the memory and running on the processor, wherein when the computer program is executed by the processor, the above sewage treatment method is implemented.

[0019] According to the sewage treatment system, method and electronic device of the embodiment of the present invention, a distributed plasma control module, a water information collection module and a plasma treatment module are included, wherein the plasma treatment module includes a negative plate and an array-arranged plasma sewage treatment component, wherein the plasma sewage treatment component includes a high-voltage power supply, a low-temperature plasma generating unit and a vertical motion module, wherein the electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative plate, and the negative plate is connected to the negative electrode of the high-voltage power supply; wherein the distributed plasma control module is respectively connected to the water information collection module and each vertical motion module, and is used to determine the first target control parameter of each vertical motion module according to the sewage information before treatment and the sewage information after treatment collected by the water information collection module, and control the corresponding vertical motion module to drive the corresponding low-temperature plasma generating unit to move vertically according to the first target control parameter, so as to adjust the plasma treatment density. Thus, by controlling the vertical motion module to drive the low-temperature plasma generating unit to move vertically, the plasma treatment density can be adjusted, and the area where sewage treatment can be performed can be changed, thereby achieving better sewage treatment capacity.

[0020] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a structural block diagram of a sewage treatment system according to an embodiment of the present invention;

[0022] Figure 2 is a structural block diagram of a sewage treatment system according to a specific embodiment of the present invention;

[0023] Figure 3 is a structural block diagram of a plasma processing module according to a specific embodiment of the present invention;

[0024] Figure 4 is a schematic structural diagram of a plasma processing module according to an example of the present invention;

[0025] Figure 5 is a schematic diagram of the structure of an array plasma wastewater treatment assembly according to some embodiments of the present invention;

[0026] Figure 6 is a schematic structural diagram of a low-temperature plasma generating unit in some embodiments of the present invention;

[0027] Figure 7 is a schematic diagram of the structure of a sewage treatment system according to some embodiments of the present invention;

[0028] Figure 8 is a flow chart of a sewage treatment method according to an embodiment of the present invention;

[0029] Fig. 9 It is a structural block diagram of an electronic device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0030] The sewage treatment system, method and electronic device of the embodiments of the present invention are described below with reference to the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements with the same or similar functions. The embodiments described with reference to the accompanying drawings are exemplary and should not be construed as limiting the present invention.

[0031] Figure 1 4 is a structural block diagram of a sewage treatment system according to an embodiment of the present invention.

[0032] like Figure 1 As shown, the sewage treatment system 100 includes a distributed plasma control module 7, a water information collection module 101 and a plasma processing module 3, wherein the plasma processing module 3 includes a negative electrode plate and an array-arranged plasma sewage treatment component, and the plasma sewage treatment component includes a high-voltage power supply, a low-temperature plasma generating unit and a vertical motion module, wherein the electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative electrode plate, and the negative electrode plate is connected to the negative electrode of the high-voltage power supply; wherein the distributed plasma control module 7 is respectively connected to the water information collection module 101 and each vertical motion module, and is used to determine the first target control parameter of each vertical motion module according to the sewage information before treatment and the sewage information after treatment collected by the water information collection module 101, and control the corresponding vertical motion module according to the first target control parameter to drive the corresponding low-temperature plasma generating unit to move vertically, so as to adjust the plasma treatment density.

[0033] Therefore, by controlling the vertical motion module to drive the low-temperature plasma generating unit to move vertically, it is possible to adjust the plasma treatment density and change the area where sewage treatment can be carried out, thereby achieving better sewage treatment capacity.

[0034] In some embodiments of the present invention, the distributed plasma control module 7 is also connected to each high-voltage power supply, and is also used to determine the second target control parameters of each high-voltage power supply based on the sewage information before treatment and the sewage information after treatment, and adjust the power supply parameters of the corresponding high-voltage power supply according to the second target control parameters to adjust the plasma treatment intensity.

[0035] In some embodiments of the present invention, the plasma processing module 3 also includes a spray device, which is arranged on one side of the sewage treatment area, and the sewage treatment area is the area between the array plasma sewage treatment component and the negative plate; wherein the distributed plasma control module 7 is also connected to the spray device respectively, and is also used to determine the third target control parameter of the spray device according to the sewage information before treatment and the sewage information after treatment, and control the spray device to spray the sewage into the sewage treatment area according to the third target control parameter.

[0036] In some embodiments of the present invention, the plasma wastewater treatment component also includes a horizontal motion module; wherein, the distributed plasma control module 7 is also respectively connected to each vertical motion module, and is used to determine the fourth target control parameter of each horizontal motion module according to the wastewater information before treatment and the wastewater information after treatment collected by the water information collection module 101, and control the corresponding horizontal motion module according to the fourth target control parameter to drive the corresponding low-temperature plasma generating unit to move horizontally, so as to adjust the plasma treatment intensity.

[0037] In some embodiments of the present invention, the plasma processing module 3 also includes a life detection module, which is respectively connected to the distributed plasma control module 7 and the electrodes in each low-temperature plasma generating unit, and is used to detect the life of each electrode and transmit the detected life to the distributed plasma control module 7; wherein the distributed plasma control module 7 is also used to issue a prompt message to prompt the replacement of the corresponding low-temperature plasma generating unit when the life reaches a preset life threshold.

[0038] In some embodiments of the present invention, the sewage treatment system 100 also includes: a temperature control module, connected to the distributed plasma control module 7, for controlling the temperature of the sewage before treatment under the control of the distributed plasma control module 7; a thermal management module, connected to the temperature control module and the plasma processing module 3, for adjusting the temperature of the temperature control module and the plasma processing module 3.

[0039] In some embodiments of the present invention, the sewage treatment system 100 further includes: a power supply module connected to the plasma processing module 3 and the distributed plasma control module 7 for supplying power to the plasma processing module 3 and the distributed plasma control module 7 .

[0040] In some embodiments of the present invention, the distributed plasma control module 7 further includes: a storage device for storing a pretreatment scheme, wherein the pretreatment scheme includes a scheme for controlling the temperature control module and the plasma processing module 3 generated by the distributed plasma control module 7 according to sewage information.

[0041] The following is a description of the details with reference to a specific embodiment.

[0042] Specifically, see Figure 2 In order to achieve sewage treatment, a sewage treatment system 100 is set up, which includes a distributed plasma control module 7, and also includes a sewage information collection module 1, a temperature control module 2, a plasma treatment module 3, and a terminal sampling module 4 connected in sequence, that is, the above-mentioned water information collection module 101 includes a sewage information collection module 1 and a terminal sampling module 4.

[0043] Moreover, the sewage information collection module 1, the temperature control module 2, the plasma treatment module 3, and the terminal sampling module 4 can be arranged to be connected in sequence through a sewage pipe. As an example, assuming that the front end of the sewage information collection module 1 is connected to a water reservoir and a filter net, at this time, the sewage in the water reservoir will pass through the filter net to filter out large particles, and then flow through the sewage pipe in the order of the sewage information collection module 1, the temperature control module 2, the plasma treatment module 3, and the terminal sampling module 4.

[0044] That is to say, when sewage needs to be treated, it will first flow through the sewage information collection module 1, so that the sewage information collection module 1 collects sewage information and obtains the sewage information collection result of the sewage information collection module 1. At the same time, the sewage information collection result will be transmitted to the distributed plasma control module 7, and the distributed plasma control module 7 will obtain the control scheme for the temperature control module 2 and the plasma treatment module 3 according to the sewage information collection result.

[0045] Afterwards, the sewage flows through the temperature control module 2 so that the temperature control module 2 heats the sewage according to the control of the distributed plasma control module 7 , thereby making the temperature of the sewage within a reasonable range, thereby ensuring the sewage treatment capacity of the plasma treatment module 3 .

[0046] After the sewage flows through the temperature control module 2 , it will flow through the plasma processing module 3 , so that the plasma processing module 3 cleans the sewage under the control of the distributed plasma control module 7 .

[0047] After the sewage flows through the plasma treatment module 3, it will flow through the terminal sampling module 4, so that the terminal sampling module 4 collects sewage information and obtains the sewage information collection result of the terminal sampling module 4. At the same time, the sewage information collection result will be transmitted to the distributed plasma control module 7, and the distributed plasma control module 7 will obtain the control scheme for the temperature control module 2 and the plasma treatment module 3 according to the sewage information collection result.

[0048] Obviously, since the sewage will continuously flow through the sewage information collection module 1, the temperature control module 2, the plasma treatment module 3, and the terminal sampling module 4, the distributed plasma control module 7 can continuously adjust the control scheme of the temperature control module 2 and the plasma treatment module 3 in real time according to the sewage information collection results.

[0049] Among them, the above-mentioned sewage information collection module 1: the front end is connected to the water storage tank and the filter net to filter large particles; the back end is connected to the sewage pipe to collect several key indicators such as pH value, temperature, type and concentration of organic matter, and transmit the sewage information collection results obtained in real time to the distributed plasma control module 7.

[0050] The temperature control module 2 is composed of a heating component, an air cooling component and a U-shaped pipe. According to the types and concentrations of different organic matter, the heating component and the air cooling component are controlled to maintain the sewage flowing in the U-shaped pipe within the target set temperature range. By integrating the temperature, pH value, pollutant type and concentration parameters, the plasma treatment module 3 is controlled by the distributed plasma control module 7, so that the best effect can be achieved in the plasma treatment process.

[0051] Therefore, through the above system, it is possible to control the temperature control module 2 and the plasma treatment module 3 according to the sewage information collection results of the terminal sampling module 4, so as to automatically adjust the sewage treatment according to the feedback of the treatment results.

[0052] The distributed plasma control module 7 includes a controller, see Figure 3 The plasma treatment module 3 includes a spray device 8, a high voltage power supply 12, a plasma wastewater treatment component 9 and a negative plate 10 arranged in an array in parallel vertically, the plasma wastewater treatment component 9 arranged in an array is connected to the positive electrode of the high voltage power supply 12, the negative plate 10 is connected to the negative electrode of the high voltage power supply 12, and the spray device 8 and the high voltage power supply 12 are connected to the controller. Figure 4 The nozzle of the spray device 8 is located above the sewage treatment area, and the sewage treatment area is the area between the array-arranged plasma sewage treatment components 9 and the negative plate 10. Among them, the array-arranged plasma sewage treatment components 9 and the negative plate 10 are used to ionize the air to obtain low-temperature plasma for cleaning the sewage in the sewage treatment area. The high-voltage power supply 12 is used to supply power to the array-arranged plasma sewage treatment components 9 and the negative plate 10 under the control of the controller; the spray device 8 is used to spray sewage into the sewage treatment area under the control of the controller.

[0053] Specifically, an array-arranged plasma wastewater treatment component 9 and a negative electrode plate 10 are arranged, and the array-arranged plasma wastewater treatment component 9 and the negative electrode plate 10 are arranged vertically and in parallel. That is to say, when the array-arranged plasma wastewater treatment component 9 and the negative electrode plate 10 are arranged, the array-arranged plasma wastewater treatment component 9 and the negative electrode plate 10 need to be arranged in a vertical state, and the planes where the array-arranged plasma wastewater treatment component 9 and the negative electrode plate 10 are located are parallel.

[0054] Moreover, the array-arranged plasma sewage treatment components 9 are connected to the positive electrode of the high-voltage power supply 12, the negative plate 10 is connected to the negative electrode of the high-voltage power supply 12, and the space area between the array-arranged plasma sewage treatment components 9 and the negative plate 10 is set as a sewage treatment area. At this time, when the high-voltage power supply 12 is powered on, since the array-arranged plasma sewage treatment components 9 are parallel to the negative plate 10, the air in the sewage treatment area can be ionized to obtain low-temperature plasma.

[0055] The nozzle of the spray device 8 is located above the sewage treatment area. When the spray device 8 sprays water, the sewage will fall into the sewage treatment area due to gravity, and then leave the sewage treatment area due to gravity. In this process, the low-temperature plasma in the sewage treatment area can clean the sewage.

[0056] Moreover, a collecting device may be provided below the sewage treatment area. After the sewage sprayed by the spraying device 8 passes through the above-mentioned sewage treatment area, it will be collected by the collecting device below and enter the sewage pipe.

[0057] Thus, by setting the plasma treatment module 3 including the plasma sewage treatment components 9 and the negative plate 10 arranged in an array in parallel vertically, the air is ionized by the plasma sewage treatment components 9 and the negative plate 10 arranged in an array to obtain low-temperature plasma, and the sewage in the sewage treatment area is cleaned by the low-temperature plasma, and the sewage is sprayed into the sewage treatment area by the spray device 8. Since the sewage is sprayed into the sewage treatment area by the spray device 8, the sewage will enter the sewage treatment area in possible states such as water droplets, trickles, and sprays, thereby expanding the effective contact area between the sewage and the low-temperature plasma and shortening the treatment time. In other words, by setting the spray device 8, the sewage cleaning ability can be further improved.

[0058] Among them, the above-mentioned spray device 8 can be composed of a controller, a pressure valve, a pipeline and a dripper, so as to realize that the sewage falls evenly in different forms such as water droplets, trickles, sprays, etc., passes through the sewage treatment area where plasma discharge is performed between the negative plate 10 and the array-arranged plasma sewage treatment components 9, fully mixes the plasma discharge medium gas and air, and utilizes the biochemical effect of plasma to complete the sewage treatment.

[0059] The control of the spray device 8 by the distributed plasma control module 7 includes controlling the water droplet size, speed, and the spacing between water droplet lines, and the control can also be adjusted in real time according to the sewage information collection results of the terminal sampling module 4.

[0060] See also Figure 5 and Figure 6 The array-arranged plasma wastewater treatment component 9 includes a plurality of low-temperature plasma generating units 11, a first drive controller, a first motor and a first displacement component. The low-temperature plasma generating unit 11 is connected to the positive pole of a high-voltage power supply 12, and the first drive controller is connected to the controller; wherein the low-temperature plasma generating unit 11 is used to ionize air with the negative plate 10; the first drive controller is used to control the first motor under the control of the controller, so as to drive the first displacement component to vertically move the low-temperature plasma generating unit 11 through the first motor.

[0061] Specifically, the array-arranged plasma wastewater treatment assembly 9 includes a plurality of low-temperature plasma generating units 11 and a vertical motion module 13. The vertical motion module 13 includes a first drive controller, a first motor and a first displacement assembly.

[0062] The low-temperature plasma generating unit 11 is connected to the positive pole of the high-voltage power supply 12, and is used to generate low-temperature plasma by ionizing air together with the negative plate 10. The vertical motion module 13 is a unit for controlling the vertical movement of the low-temperature plasma generating unit 11. Obviously, since the array-arranged plasma wastewater treatment components 9 are vertically arranged, the vertical movement of the low-temperature plasma generating unit 11 means controlling the low-temperature plasma generating unit 11 to move on the plane where the array-arranged plasma wastewater treatment components 9 are located. That is to say, if the perspective is facing the plane where the array-arranged plasma wastewater treatment components 9 are located, the vertical motion module 13 can control the low-temperature plasma generating unit 11 to move up and down, left and right, obliquely upward, and obliquely downward. Moreover, since there are multiple low-temperature plasma generating units 11, when the first displacement component moves the low-temperature plasma generating unit 11, the moving direction and speed can be different for each low-temperature plasma generating unit 11.

[0063] Thus, an array-arranged plasma wastewater treatment component 9 is provided, comprising a plurality of low-temperature plasma generating units 11, a first drive controller, a first motor and a first displacement component, wherein the low-temperature plasma generating unit 11 is connected to the positive pole of a high-voltage power supply 12, and the first drive controller is connected to the controller; wherein the low-temperature plasma generating unit 11 is used to ionize air with the negative plate 10; and the first drive controller is used to control the first motor under the control of the controller, so as to drive the first displacement component to vertically move the low-temperature plasma generating unit 11 through the first motor. Since the array-arranged plasma wastewater treatment assembly 9 includes a plurality of low-temperature plasma generating units 11 and a vertical motion module 13, in the above-mentioned wastewater treatment area, the area where low-temperature plasma is actually generated for wastewater treatment is the area between the low-temperature plasma generating unit 11 and the negative electrode plate 10. Therefore, by moving the low-temperature plasma generating unit 11 by the vertical motion module 13, the plasma wastewater treatment area can be changed, thereby achieving better wastewater treatment capacity. For example, if the wastewater to be treated currently does not require a very high low-temperature plasma concentration, the interval between the low-temperature plasma generating units 11 can be increased, thereby expanding the area where low-temperature plasma will be generated, thereby achieving faster wastewater cleaning. If the wastewater to be treated currently requires a very high low-temperature plasma concentration, the interval between the low-temperature plasma generating units 11 can be reduced, thereby increasing the concentration of the low-temperature plasma and improving the wastewater cleaning capacity.

[0064] Among them, the vertical motion module 13 is composed of a first drive controller, a first motor, and a first displacement component. The first drive controller is connected to the controller in the distributed plasma control module 7 through a bus. On the one hand, it provides real-time feedback of parameters such as position, speed, and working mode. On the other hand, it receives position control instructions, adjusts the first motor to drive the first displacement component to move the low-temperature plasma generating unit 11 to a specified position, and adjusts the distance between two adjacent groups of low-temperature plasma generating units 11 in the vertical direction. The motion control accuracy of the vertical motion module 13 is 1mm, which realizes the function of precise control of the plasma sewage treatment area. The first displacement component includes but is not limited to a lead screw, a hinge, a toothed belt, etc., and the first motor includes but is not limited to a servo motor, a drive motor, a stepper motor, etc.

[0065] Optionally, the array-arranged plasma wastewater treatment component 9 also includes a second drive controller, a second motor and a second displacement component, and the second drive controller is connected to the controller; wherein the second drive controller is used to control the second motor under the control of the controller, so as to drive the second displacement component through the second motor to change the distance between the array-arranged plasma wastewater treatment component 9 and the negative plate 10.

[0066] Specifically, the array-arranged plasma wastewater treatment components 9 also include a horizontal motion module 14, which includes a second drive controller, a second motor and a second displacement component. Through the second displacement component, the distance between the array-arranged plasma wastewater treatment components 9 and the negative plate 10 can be changed. That is to say, if the viewing angle is facing the plane where the array-arranged plasma wastewater treatment components 9 are located, the above-mentioned horizontal motion module 14 can control the above-mentioned array-arranged plasma wastewater treatment components 9 to move back and forth.

[0067] Since the above-mentioned array-arranged plasma sewage treatment components 9 are connected to the positive electrode of the high-voltage power supply 12, and the above-mentioned negative plate 10 is connected to the negative electrode of the high-voltage power supply 12, when the high-voltage power supply 12 is powered on, an electric field will be formed between the array-arranged plasma sewage treatment components 9 and the negative plate 10, and the electric field will ionize the air. Since the electric field strength is inversely proportional to the distance between the electrodes, the distance between the array-arranged plasma sewage treatment components 9 and the negative plate 10 can be adjusted by the above-mentioned horizontal motion module 14, so as to change the ability to ionize the air, thereby realizing flexible and controllable plasma sewage treatment intensity, and can adjust the ionized air capacity in real time according to actual conditions, so that the ionization effect is guaranteed to be in the best state, thereby achieving better sewage treatment capacity.

[0068] Among them, the above-mentioned horizontal motion module 14 is composed of a second drive controller, a second motor, and a second displacement component. The second drive controller is connected to the controller in the distributed plasma control module 7 through a bus. On the one hand, it feeds back parameters such as position, speed, and working mode in real time, and on the other hand, it receives position control instructions, adjusts the second motor to drive the second displacement component to move the array-arranged plasma sewage treatment components 9 to a specified position, and adjusts the plasma discharge gap between the horizontal array-arranged plasma sewage treatment components 9 and the negative plate 10. The motion control accuracy of the above-mentioned horizontal motion module 14 is 1mm, realizing the function of flexible and controllable plasma sewage treatment intensity. The second displacement component includes but is not limited to a lead screw, a hinge, a toothed belt, etc., and the second motor includes but is not limited to a servo motor, a drive motor, a stepper motor, etc.

[0069] Optionally, the low-temperature plasma generating unit 11 includes an electrode array assembly 16 and a life detection module 15. The electrode array assembly 16 is connected to the positive pole of the high-voltage power supply 12 for air ionization, and the life detection module 15 is connected to the electrode array assembly 16 for performing life detection on the electrode array assembly 16.

[0070] Specifically, the life detection module 15 is composed of a sampling circuit, an isolation circuit, a microcontroller, and an interface transmission circuit, which realizes the conductivity sampling of the electrodes in the electrode array assembly 16, and judges the remaining life of the electrodes according to the life-conductivity relationship curve of the electrode material. In addition, the life information of each low-temperature plasma generating unit 11 collected is fed back to the distributed plasma control module 7. The interface transmission circuit is isolated by optical fiber communication. The microcontroller is preferably a 32-bit embedded microprocessor, but is not limited to other chips such as DSP and FPGA.

[0071] The electrode array assembly 16 is a device for converting the high-voltage energy output by the high-voltage power supply 12 into plasma, and its components are divided into: a power shunt module and an electrode array module, wherein the power shunt module is divided into a total circuit buried resistance type, a branch circuit buried resistance type, and a direct-through type. The direct-through type means that the high-voltage energy acts directly on the electrode without attenuation. The total circuit buried resistance means that a 10Ω-10kΩ resistor is connected in series on the total circuit of the input high-voltage power, and the rear end of the resistor is connected to each output electrode. The branch circuit buried resistance type means that a 10Ω-10kΩ resistor is connected in series on the front end of each electrode. Electrode array module: The carrier of the electrode needle is divided into a 10-120-pin strip array module, which adopts a single-row arrangement form, a 40-120-pin square array module, which adopts an equidistant array arrangement form, and a 20-120-pin rectangular array module, which adopts a (2-10)×N array arrangement form. The electrode needle spacing is 2-5cm, the electrode needle has a diameter of 0.8-1.5mm, and is made of gold-plated metal. The metal includes but is not limited to copper, iron, aluminum, stainless steel, etc.

[0072] In addition, a life detection interface 17 is required to be set up, and the life detection interface 17 is connected to the life detection module 15 by wired connection. A rotating snap-on connection is used. The connecting cable is detachable. The interface is divided into a power supply sampling part and a signal communication part. The power supply voltage input is DC5V, and a differential sampling mode is adopted. The signal communication part uses interface protocols such as RS232C and RS485 to exchange information with the life monitoring device 15.

[0073] Therefore, by setting up the electrode array assembly 16, plasma discharge can be achieved through small, low-power electrode needles, the generation efficiency of low-temperature plasma can be improved, and the index requirements of a single high-voltage power supply can be reduced. In addition, by setting up the life detection module 15 to perform life detection on the electrode array assembly 16, electrode needles with insufficient life can be discovered in time, thereby ensuring that the electrode array assembly 16 is always in the best condition.

[0074] It should be noted that in Figure 5 and Figure 6In the embodiment, an array plasma wastewater treatment component 11 is provided, which includes a vertical motion module 13, a horizontal motion module 14, a life detection module 15, and an electrode array component 16. However, in practical applications, it is possible to choose between the two according to the actual situation. For example, when the quality of the wastewater is relatively fixed, at least one of the vertical motion module 13 and the horizontal motion module 14 can be discarded, and only the life detection module 15 can be used to perform life detection on the electrode array component 16. For another example, the electrode array component 16 can be replaced by other equipment connected to the positive pole of the high-voltage power supply 12. For another example, when the installation space is relatively narrow, the horizontal motion module 14 can be discarded. For another example, when it is expected that the system only needs to be used temporarily, the life detection module 15 can be discarded to further reduce costs.

[0075] See also Figure 7 The sewage treatment system 100 further includes: a thermal management module 5 , which is connected to the temperature control module 2 and the plasma processing module 3 and is used to adjust the temperature of the temperature control module 2 and the plasma processing module 3 .

[0076] Among them, the above-mentioned thermal management module 5 is composed of a heat dissipation component, a fan, and an air duct. The heat dissipation component used in the temperature control module 2 is covered with thermally conductive silicone to conduct heat to a large area of ​​aluminum heat sink. The heat dissipation component used for the high-voltage power supply 12 in the plasma processing module 3 is an aluminum heat sink contact heat dissipation. On the one hand, the fan takes away the heat through the air duct and dissipates it outside the device. On the other hand, the low-temperature air outside the device is drawn into the air duct to continuously dissipate heat in the heating area. In addition, the air duct is used to continuously update the air between the array-arranged plasma sewage treatment components 9 and the negative plate 10 to ensure the efficiency of low-temperature plasma generation.

[0077] The above-mentioned sewage treatment system 100 also includes: a power supply module 6, which is connected to the temperature control module 2, the plasma processing module 3 and the distributed plasma control module 7, and is used to supply power to the temperature control module 2, the plasma processing module 3 and the distributed plasma control module 7.

[0078] Among them, the above-mentioned power supply module 6 is connected to an external energy source (battery, mains power supply), has a wide voltage input, isolating from the outside, and reducing the interference, noise, and surge caused by the external mains power supply; it generates multiple power supply levels internally to provide the temperature control module 2, plasma processing module 3 and distributed plasma control module 7 with their respective required power supplies.

[0079] The distributed plasma control module 7 further includes: a storage device for storing a pre-treatment scheme, wherein the pre-treatment scheme includes a scheme for controlling the temperature control module 2 and the plasma treatment module 3 generated by the controller according to the sewage information collection result.

[0080] Specifically, the above-mentioned distributed plasma control module 7 integrates human-computer interaction, data storage, process monitoring, and consumable life management functions; the distributed plasma control module 7 provides users with equipment parameter configuration, fault list recording, sewage treatment energy flow monitoring, effective treatment dose calculation, and dynamic process display. The information received by the distributed plasma control module 7 includes the type, concentration, pH value, and temperature information of the sewage pollutants input by the sewage information acquisition module 1, the type, concentration, pH value, and temperature parameters of the pollutants in the treated sewage fed back by the terminal sampling module 4, and the real-time voltage and current data fed back by the high-voltage power supply 12. The distributed plasma control module 7 needs to automatically control the vertical spacing, horizontal discharge distance, and power supply parameters (voltage, current, power, frequency, and duty cycle) of each low-temperature plasma generating unit 11 in the plasma processing module 3 through the low-temperature plasma intelligent control algorithm according to the received information to achieve the best efficiency of sewage treatment. In addition, the distributed plasma control module 7 also needs to monitor the equipment operation status information, maintenance information, and consumable life information internally.

[0081] The following is an explanation of a specific workflow.

[0082] Specifically, the sewage treatment system 100 is connected to an external energy source through the power supply module 6, and the sewage treatment system 100 starts to start. Thereafter, the sewage treatment system 100 performs the following steps.

[0083] First, the power supply module 6 starts self-checking to check whether the output of each power configuration module has reached the power supply requirement, waits for the power supply to stabilize, and starts the power supply output: first, the distributed plasma control module 7 is powered on to control the power supply module 6 to start the power supply output in sequence; on the one hand, the power supply output supplies power to the fan and heating device in the temperature control module 2 through the power supply cable; on the other hand, a distributed board card plug-in design mode is adopted to supply power to multiple high-voltage power supplies 12, vertical motion module 13, horizontal motion module 14, and life detection module 15 in the plasma processing module 3.

[0084] Second, the distributed plasma control module 7 determines whether the power supply of each module is normal by reading the status information of the power supply module 6. If not, the power supply fault information is given. If normal, the distributed plasma control module 7 reads the life information of the low-temperature plasma generating unit 11 through the life detection module 15 in the plasma processing module 3, reads the status information of the high-voltage power supply 12, the parameter configuration information of each sensor in the sewage information acquisition module 1, the status information of the cooling and heating components in the temperature control module 2, and the sensor configuration information in the terminal sampling module 4. At the same time, the system retrieves the device configuration information, fault information, and life information of key components in the storage device to determine whether each module meets the requirements for continuing to work. The system will prompt the user to maintain or replace the components that do not meet the working requirements, and synchronize the distributed plasma control module 7 to display them on the human-computer interaction interface of the distributed plasma control module 7.

[0085] Third, sewage information collection: In the first step, the sewage information collection module 1 collects four key indicators of sewage pH value, temperature, type of organic matter, and concentration through sensors distributed in the pipeline, and transmits them to the distributed plasma control module 7. The system automatically generates a sewage pretreatment plan by analyzing and calculating the data collected by the sewage information collection module 1 and the sewage discharge standards required by laws and regulations.

[0086] Fourth, the formulation of the sewage treatment plan: the automatically generated pretreatment plan is displayed on the software interface of the distributed plasma control module 7. The content of the pretreatment plan includes: the control temperature of the temperature control module 2, the gas flow rate of the air in the plasma discharge area for updating the thermal management module 5, the flow rate of the spray device 8, the sewage form, the voltage, current, frequency, and duty cycle configuration parameters of each group of high-voltage power supplies 12, the working time parameters of the low-temperature plasma generating unit 11, the spatial position parameters of the vertical motion module 13, the spatial position parameters of the horizontal motion module 14, and the emission indicators of the main pollutants of the sewage after treatment. The user can adjust the specific numerical range of the above parameters by himself. During the adjustment process, the system assists the user in operation through graphics, text, voice, and video media, and forms the execution parameters of the sewage treatment. The parameters include the sewage treatment temperature, the array high-voltage power supply parameters, the plasma discharge spacing, and the distance between the low-temperature plasma generating units 11. The final plan will be stored in the storage device in the distributed plasma control module 7; the next time the user logs in, the display plan can be directly called, or it can be adjusted again.

[0087] Fifth, start the process. First, click the start button on the software interactive interface of the distributed plasma control module 7. The temperature control module 2 starts the cooling or heating function according to the sewage temperature requirements in the formulated plan to maintain the temperature of the sewage to be treated within the set range of the plan. After the temperature is reached, the distributed plasma control module 7 sends the instruction to the plasma processing module 3 through the control signal bus. The plasma processing module 3 starts. In the first step, the array-arranged plasma sewage treatment component 9 is started. First, according to the plasma discharge spacing in the plan issued by the distributed plasma control module 7 and the distance parameters between the low-temperature plasma generating units 11, the vertical motion module 13 and the horizontal motion module 14 are controlled to move to the specified position; secondly, each group of high-voltage power supplies 12 starts to pre-install the voltage, current, frequency, and duty cycle parameters set in the plan, and feeds back the status of each group of high-voltage power supplies 12 to the distributed plasma control module 7 in real time through the bus; in the second step, the spray device 8 controls the pressure valve and the dripper according to the instruction, and the sewage is arranged in the array-arranged plasma sewage treatment component 9 and the negative electrode according to the form and flow parameter requirements of the plan. The wastewater flows between the plates 10; the third step is to start the valve of the spray device 8 and each group of high-voltage power supplies 12, and the sewage treatment begins; the fourth step is automatic control of the system, the terminal sampling module 4 collects the pH value, temperature, organic matter type, and concentration index of the treated water in real time, and transmits the data to the distributed plasma control module 7. According to the parameters of the treated sewage, combined with the sewage information sampling data and the real-time output data of each group of high-voltage power supplies 12 on the array-arranged plasma sewage treatment components 9, the comprehensive treatment intensity of the plasma treatment module 3 is dynamically and intelligently adjusted. When the data fed back by the terminal sampling module 4 is lower than the expected treatment result of the scheme, the distributed plasma control module 7 increases the output voltage and current of the high-voltage power supply 12 according to the control algorithm, and controls the horizontal motion module 14 to reduce the spacing to increase the plasma treatment intensity; intelligently adjust the vertical motion module 13, by controlling each group of low-temperature plasma generating units 11 to change the density of the low-temperature plasma, give full play to the biochemical effect of short-lived substances in the low-temperature plasma; intelligently control the thermal management module 5 to renew the air in the plasma discharge area and increase the generation efficiency of the low-temperature plasma. When the data fed back by the terminal sampling module 4 is higher than the expected processing result of the plan, first, the system will appropriately increase the sewage flow rate of the spray device 8 to save the sewage treatment time of the device system; second, it will appropriately reduce the output voltage and current parameters of some high-voltage power supplies 12 or shut down some high-voltage power supplies 12 to reduce energy consumption.

[0088] Sixth, click the stop button on the control interface of the distributed plasma control module 7, the entire sewage treatment process ends, and the sewage treatment system 100 waits for the next activation.

[0089] Among them, the above-mentioned plasma treatment module 3 is used to perform precise low-temperature plasma treatment on sewage. First, the flow rate, pressure, and water flow form (water droplets, trickles, sprays) of the sewage entering are regulated according to the third target control parameter given by the distributed plasma control module 7. The plasma treatment module 3 uses air as the plasma generating medium gas, and uses a spray device 8 to control the sewage flow rate, pressure and water flow form, so as to allow the sewage to fully contact with the air; second, the working parameters of the array-arranged plasma sewage treatment components 9 are controlled according to the first target control parameter, the second target control parameter and the fourth target control parameter. By controlling the discharge distance, the interval of the electrode array, and the voltage and current parameters of each high-voltage power supply 12, the physical and chemical state of each layer of the sewage from top to bottom is fully reacted.

[0090] The terminal sampling module 4 collects the pH value, temperature, type of organic matter, and concentration parameters of the water sample after being processed by the plasma processing module 3, and feeds them back to the distributed plasma control module 7. The distributed plasma control module 7, through analysis and calculation, on the one hand, adjusts the temperature control module 2 to adjust the sewage temperature; on the other hand, adjusts the power supply parameters (voltage, current, power, frequency, duty cycle) of the high-voltage power supply 12 at different height levels in the plasma processing system; adjusts the spacing between each low-temperature plasma generating unit 11 through the vertical motion module 13; and adjusts the spacing between the array-arranged plasma sewage treatment components 9 and the negative plate 10 through the horizontal motion module 14, thereby dynamically adjusting the sewage treatment effect.

[0091] The above-mentioned array-arranged plasma wastewater treatment component 9 is composed of a low-temperature plasma generating unit 11, a high-voltage power supply 12, a vertical motion module 13, a horizontal motion module 14, and a life detection module 15; it realizes accurate and uniform plasma treatment of wastewater; through precise control of plasma discharge, the wastewater can be treated with plasma at different levels and intensities from top to bottom, giving full play to the biochemical effects of short-lived substances in low-temperature plasma; secondly, it realizes monitoring of the life of the discharge electrode, adopts a conductivity calculation algorithm, and gives a replacement prompt for the low-temperature plasma generating unit 11 with an expired life, thereby improving the plasma generation efficiency.

[0092] The negative electrode plate 10 is made of stainless steel, arranged one by one with the low-temperature plasma generating unit 11 , connected to the negative electrode of the high-voltage power supply 12 , and generates low-temperature plasma between the negative electrode plate 10 and the low-temperature plasma generating unit 11 .

[0093] Low-temperature plasma generating unit 11: It is composed of a high-voltage connection interface 18, a life detection interface 17, and four groups of electrode array components 16; it uses the principle of high-voltage ionization of air to generate low-temperature plasma, and at the same time collects the life information of the electrode array, and transmits it to the distributed plasma control module 7 through RS485 and RS232C communication protocols; the system gives information such as the remaining life time and the warning replacement time, and prompts it on the human-computer interaction interface.

[0094] High-voltage connection interface 18: connected to the high-voltage power supply 12 to realize the diversion of high-voltage energy. The rotating embedded interface design is adopted to ensure the firmness of the interface. The number of interfaces is 1x4. When the male and female are connected, the contactable part is away from the high-voltage area, and the air creepage distance is greater than 10cm; the interface material is hard plastic, and the insulation withstand voltage is DC 50Kv.

[0095] The array-arranged plasma sewage treatment component 9 is characterized in that a plurality of groups of low-temperature plasma generating units 11 and high-voltage power supplies 12 are fixed on a carrier, and each group of high-voltage power supplies 12 is independently controlled. The output parameters of the high-voltage power supply 12 can be adjusted according to the real-time treatment results of the sewage, and the adjustment parameters are not limited to voltage, current, frequency, and duty cycle. The carrier can be made of different materials according to the characteristics of the sewage, including but not limited to plastic, acrylic, ceramic, alumina, mullite, heat-resistant glass, quartz and other insulating materials. Under the control of the horizontal motion module 14, the carrier can adjust the distance between the low-temperature plasma generating unit 11 and the negative plate 10 as a whole, adjust the discharge spacing of the electrode array assembly 16, and thus adjust the plasma generation intensity as a whole. The arrangement of the low-temperature plasma generating unit 11 is not limited to horizontal and vertical arrangements, and its spacing can be adjusted under the control of the vertical motion module 13, so as to adjust the density of the plasma discharge. The part of the negative plate 10 facing the low-temperature plasma generating unit 11 adopts a metal plane design, and other areas can adopt a hollow and hollow design.

[0096] Distributed plasma control module 7: Its characteristics are to realize user human-computer interaction and intelligent control, and it is composed of display components, installation platform, interface board, and storage device; the system provides users with equipment parameter configuration, consumable parts life monitoring information, fault list records, sewage treatment plan configuration management, and sewage treatment records, and the module monitors the equipment operation status information, maintenance information, and consumable life information internally; the system can be configured with 1-9 plasma processing modules 3, and the equipment function configuration, component configuration, and interface configuration can use XML and JSON configuration files; the storage device includes but is not limited to NOR Flash (NOR Flash Memory, or non-flash memory), NAND Flash (NAND Flash Memory, and non-flash memory), EEPROM (Electrically Erasable Programmable Read-Only Memory, electrically erasable programmable read-only memory), and its installation platform (i.e. the above-mentioned controller) includes but is not limited to embedded all-in-one machine, touch all-in-one machine, general computer platform, separate computer platform, and operating system includes but is not limited to Android, Linux, and Unix.

[0097] The electrode array assembly 16 is divided into: a power shunt module and an electrode array module, wherein the power shunt module is divided into a total circuit buried resistance type, a branch circuit buried resistance type, and a straight-through type; wherein the straight-through type means that the high-voltage energy acts directly on the electrode without attenuation; the total circuit buried resistance type means that a 10Ω-10kΩ resistor is connected in series on the total circuit of the input high-voltage power, and the rear end of the resistor is connected to each output electrode; the branch circuit buried resistance type means that a 10Ω-10kΩ resistor is connected in series on the front end of each electrode; the electrode array module: the carrier of the electrode needle is divided into a 10-120-pin strip array module, which adopts a single-row arrangement, a 40-120-pin square array module, which adopts an equidistant array arrangement, and a 20-120-pin rectangular array module, which adopts a (2-10)×N array arrangement; the electrode needle spacing is 2-5cm, the electrode needle is 0.8-1.5mm in diameter, and is made of metal gold-plated material, and the metal material includes but is not limited to copper, iron, aluminum, stainless steel, etc.

[0098] The power supply module 6 includes two forms: battery and network power supply. It isolates and weakens the interference, noise and surge caused by the external network power supply. It generates multiple power supply levels internally to provide the power required by the distributed plasma control module 7, the temperature control module 2 and the plasma processing module 3. It is composed of a network power supply anti-interference module and a low-voltage power supply design module. The network power supply anti-interference module is composed of a fuse, a filter and an active noise reduction analog circuit, which can effectively isolate the network power supply interference, surge and EFT. The battery includes but is not limited to lead-acid batteries, lithium-ion batteries and sodium-ion batteries. The low-voltage power supply design adopts a wide input voltage of AC 110V-240V and DC 12V-36V. The main power conversion circuit adopts an active PFC (Power Factor Correction) design, which can independently adjust the power distribution of the entire power supply network. The power supply module 6 adopts a plug-in interface design. When a new subsystem is added, a low-voltage power conversion module can be directly added without adjusting the hardware parameters of the main power conversion circuit. The output range of the main power conversion circuit is 50VA-2000VA. The low-voltage power conversion module includes but is not limited to 3.3V, 5V, 12V, and 24V DC-DC modules.

[0099] The high-voltage power supply 12 adopts a boost-type V / F control architecture, an active PFC circuit design, a full-bridge push-pull drive circuit composed of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) and a drive network composed of a high-frequency transformer to complete the frequency, amplitude, duty cycle, and input power regulation. On the one hand, according to the voltage, current, frequency, duty cycle and other parameters issued by the distributed plasma control module 7, the conversion of DC and AC energy types is completed. On the other hand, the real-time voltage and current data of the high-voltage output are sampled and fed back; a high-voltage DC power supply is preferred, not limited to an AC high-voltage power supply and a pulsed high-voltage power supply. A low-power power supply can improve the efficiency of electric energy conversion and reduce energy consumption. The input end adopts low-voltage AC power supply, and the input adopts wide voltage input, covering the range of 12VAC-36VAC, the operating frequency covers 30Khz-200Khz, and the voltage conversion adopts high-frequency horizontal transformer isolation. The primary skeleton is made of epoxy tube material, and the winding is made of copper strip material. The secondary two-way output adopts polycarbonate rod multi-slot skeleton, and the winding adopts QA-1 / F material. The input and output stage isolation is DC 30Kv. Optical fiber communication is used between the internal low-voltage control area and the high-voltage output data acquisition. The control method is digital control, supporting communication protocols RS232, RS485, and Modbus. The monitoring range covers: life, overvoltage, overcurrent, overpower, output voltage, output current, and working status. Including but not limited to DC high voltage, AC high voltage, and pulse high voltage power supply 12; the output voltage range of DC high voltage power supply 12 is 15kV-30kV, and the current range is 0-10mA. Output range of pulse high voltage power supply 12: pulse voltage range 10-30kV, pulse current range 0-10mA, output power range 0-300w, adjustable frequency range 10Hz-20KHz, adjustable duty cycle range 10%-80%.

[0100] The life detection module 15 is composed of a sampling circuit, an isolation circuit, a microcontroller, and an interface transmission circuit, and realizes the life detection of the electrode array in the low-temperature plasma generating unit 11. The sampling circuit includes but is not limited to the use of a 16-bit AD sampling chip + RLC reference circuit, which is used to sample the resistance value of each group of electrode array components 16 when the high-voltage power supply 12 is turned off. The isolation circuit includes but is not limited to the use of a photoelectric coupler + push-pull circuit design to isolate the mutual interference between the sampling circuits. The microcontroller converts the resistance value data collected from each group of electrode array components 16 into conductivity, calculates the remaining life of the electrode according to the different material electrode needle life-conductivity algorithm stored in the configuration file, and numbers each group of electrode array components 16, and transmits data according to the custom data composition protocol. The interface transmission circuit adopts an optical fiber conversion circuit design, uses optical fiber transmission, isolates the high-voltage discharge area and the low-voltage control area, and improves the overall anti-interference ability of the device. The push-pull circuit includes but is not limited to a push-pull circuit composed of a triode and a MOS tube. The microprocessor is preferably an embedded microprocessor, including but not limited to a single chip microcomputer, a DSP (Digital Signal Processor), and an FPGA (Field-Programmable Gate Array).

[0101] The thermal management module 5 is composed of heat dissipation components, fans, and air ducts. It mainly plays two roles. First, the device is cooled. The temperature control module 2 is covered with thermal conductive silicone to transfer heat to a large area of ​​aluminum heat sink. The high-voltage power supply 12 in the plasma processing module 3 uses aluminum heat sinks for contact heat dissipation. On the one hand, the fan takes away the heat through the air duct and sends the heat outside the device. On the other hand, the low-temperature air outside the device is drawn into the air duct to continuously dissipate heat in the heating area. Second, air circulation increases the efficiency of low-temperature plasma generation. The medium gas used in the plasma processing module 3 is air. As the plasma continues to be generated, a large amount of nitrogen and oxygen in the air are ionized to form RONS, and biochemical reactions are carried out on the sewage, which changes the original air components and affects the efficiency of plasma generation. Therefore, the air between the array-arranged plasma sewage treatment components 9 and the negative plate 10 is continuously updated through the air duct to ensure the efficiency of low-temperature plasma generation. The heat dissipation components include but are not limited to thermal conductive silicone, aluminum heat sinks, water cooling, liquid cooling heat pipes, etc.

[0102] In summary, the sewage treatment system of the embodiment of the present invention includes a distributed plasma control module, a water information collection module and a plasma treatment module, the plasma treatment module includes a negative plate and an array-arranged plasma sewage treatment component, the plasma sewage treatment component includes a high-voltage power supply, a low-temperature plasma generating unit and a vertical motion module, the electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply, and is arranged opposite to the negative plate, and the negative plate is connected to the negative electrode of the high-voltage power supply; wherein, the distributed plasma control module is respectively connected to the water information collection module and each vertical motion module, and is used to determine the first target control parameter of each vertical motion module according to the sewage information before treatment and the sewage information after treatment collected by the water information collection module, and control the corresponding vertical motion module according to the first target control parameter to drive the corresponding low-temperature plasma generating unit to move vertically to adjust the plasma treatment density. Therefore, by controlling the vertical motion module to drive the low-temperature plasma generating unit to move vertically, the plasma treatment density can be adjusted, and the area where sewage treatment can be carried out can be changed, thereby achieving better sewage treatment capacity. Moreover, through the terminal sampling module, it is possible to flexibly adjust the plasma treatment intensity and density based on the sewage data collected and processed by the back-end by adjusting the output parameters of each group of high-voltage power supplies, the spacing of the low-temperature plasma generating units and the discharge gap, and make full use of the biochemical effects of short-lived substances in plasmas at all levels. In addition, the distributed plasma control module integrates display components, installation platforms, interface boards, storage devices and intelligent auxiliary system software, which can establish sewage treatment information archives, and interact with plasma treatment modules, temperature control modules and thermal management modules for information exchange, linkage control, and intelligentization, and execute sewage treatment schemes of different types and physical states. Moreover, according to the conductivity-lifetime algorithm of different materials, the life of the high-voltage discharge electrode is detected by the life detection equipment, and the replacement is prompted through the system software interface to ensure the efficiency and safety of plasma generation. Moreover, the high-voltage power supply adopts a small, low-power and high-efficiency design concept, combined with the plasma discharge structure of the array electrode needle, which not only improves the plasma generation efficiency, but also reduces the index requirements of a single high-voltage power supply, so that the power supply efficiency is greatly improved. Moreover, through the spray structure, the sewage is turned into a droplet shape for plasma treatment, which increases the effective contact area between the sewage and the low-temperature plasma and shortens the treatment time.

[0103] Furthermore, the present invention provides a sewage treatment method.

[0104] The sewage treatment method of the embodiment of the present invention is used in the sewage treatment system 100 of the above embodiment.

[0105] Figure 8 4 is a flow chart of a sewage treatment method according to an embodiment of the present invention.

[0106] like Figure 8 As shown, the sewage treatment method comprises:

[0107] S81, collecting sewage information to obtain sewage information before and after treatment.

[0108] S82, controlling the low-temperature plasma generating unit to move vertically according to the sewage information before and after treatment to adjust the plasma treatment density, and using the plasma generated by the low-temperature plasma generating unit to treat the sewage.

[0109] It should be noted that for other specific implementations of the sewage treatment method of the embodiment of the present invention, reference may be made to the sewage treatment system 100 of the above embodiment.

[0110] The sewage treatment method of the embodiment of the present invention can adjust the plasma treatment density and change the area where sewage treatment can be performed by controlling the vertical movement of the low-temperature plasma generating unit, thereby achieving better sewage treatment capacity.

[0111] Furthermore, the present invention provides an electronic device.

[0112] Fig. 9 It is a structural block diagram of an electronic device according to an embodiment of the present invention.

[0113] like Fig. 9 As shown, the electronic device 500 includes: a processor 501 and a memory 503. The processor 501 and the memory 503 are connected, such as through a bus 502. Optionally, the electronic device 500 may also include a transceiver 504. It should be noted that in actual applications, the transceiver 504 is not limited to one, and the structure of the electronic device 500 does not constitute a limitation on the embodiments of the present invention.

[0114] Processor 501 may be a CPU (Central Processing Unit), a general purpose processor, a DSP (Digital Signal Processor), an ASIC (Application Specific Integrated Circuit), an FPGA (Field Programmable Gate Array) or other programmable logic devices, transistor logic devices, hardware components or any combination thereof. It may implement or execute various exemplary logic blocks, modules and circuits described in conjunction with the disclosure of the present invention. Processor 501 may also be a combination that implements computing functions, such as a combination of one or more microprocessors, a combination of a DSP and a microprocessor, etc.

[0115] The bus 502 may include a path to transmit information between the above components. The bus 502 may be a PCI (Peripheral Component Interconnect) bus or an EISA (Extended Industry Standard Architecture) bus. The bus 502 may be divided into an address bus, a data bus, a control bus, etc. For ease of representation, Fig. 9 Only one thick line is used in the diagram, but this does not mean that there is only one bus or only one type of bus.

[0116] The memory 503 is used to store a computer program corresponding to the control method of the sewage treatment system of the above embodiment of the present invention, and the computer program is controlled and executed by the processor 501. The processor 501 is used to execute the computer program stored in the memory 503 to implement the contents shown in the above method embodiment.

[0117] in, Fig. 9 The electronic device 500 shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present invention.

[0118] The electronic device of the embodiment of the present invention, by implementing the sewage treatment method of the above embodiment, can achieve the adjustment of plasma treatment density and change the area where sewage treatment can be performed by controlling the vertical movement of the low-temperature plasma generating unit, thereby achieving better sewage treatment capacity.

[0119] It should be noted that the logic and / or steps represented in the flowchart or otherwise described herein can be considered as a sequenced list of executable instructions for implementing logical functions, and can be specifically implemented in any computer-readable medium for use by an instruction execution system, device or apparatus (such as a computer-based system, a system including a processor, or other system that can fetch instructions from an instruction execution system, device or apparatus and execute instructions), or in combination with these instruction execution systems, devices or apparatuses. For the purposes of this specification, "computer-readable medium" can be any device that can contain, store, communicate, propagate or transmit a program for use by an instruction execution system, device or apparatus, or in combination with these instruction execution systems, devices or apparatuses. More specific examples of computer-readable media (a non-exhaustive list) include the following: an electrical connection portion with one or more wirings (electronic device), a portable computer disk box (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disk read-only memory (CDROM). In addition, the computer-readable medium may even be paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium and then editing, interpreting or processing in other suitable ways if necessary, and then stored in a computer memory.

[0120] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiment, a plurality of steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. If implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or their combination: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc.

[0121] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0122] In the description of this specification, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and cannot be understood as a limitation on the present invention.

[0123] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0124] In the description of this specification, unless otherwise specified, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0125] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being "above", "above" or "above" a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being "below", "below" or "below" a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0126] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. A sewage treatment system, characterized in that: The system comprises: a distributed plasma control module, a water information collection module and a plasma processing module, wherein the plasma processing module comprises a negative electrode plate and an array-arranged plasma wastewater treatment component, wherein the plasma wastewater treatment component comprises a high-voltage power supply, a low-temperature plasma generating unit and a vertical motion module, wherein an electrode in the low-temperature plasma generating unit is connected to the positive electrode of the high-voltage power supply and is arranged opposite to the negative electrode plate, and the negative electrode plate is connected to the negative electrode of the high-voltage power supply; Among them, the distributed plasma control module is respectively connected to the water information collection module and each of the vertical motion modules, and is used to determine the first target control parameter of each vertical motion module according to the sewage information before treatment and the sewage information after treatment collected by the water information collection module, and control the corresponding vertical motion module according to the first target control parameter to drive the corresponding low-temperature plasma generating unit to move vertically to adjust the plasma treatment density.

2. The sewage treatment system according to claim 1, characterized in that: The distributed plasma control module is also connected to each of the high-voltage power supplies, respectively, and is also used to determine the second target control parameters of each of the high-voltage power supplies based on the sewage information before treatment and the sewage information after treatment, and adjust the power supply parameters of the corresponding high-voltage power supply according to the second target control parameters to adjust the plasma treatment intensity.

3. The sewage treatment system according to claim 1, characterized in that: The plasma treatment module further includes a spray device, which is arranged on one side of the sewage treatment area, and the sewage treatment area is the area between the array plasma sewage treatment assembly and the negative plate; wherein, The distributed plasma control module is also connected to the spray device respectively, and is also used to determine the third target control parameter of the spray device according to the sewage information before treatment and the sewage information after treatment, and control the flow rate of the spray device to spray sewage into the sewage treatment area according to the third target control parameter.

4. The sewage treatment system according to claim 2, characterized in that: The plasma wastewater treatment assembly also includes a horizontal motion module; in, Among them, the distributed plasma control module is also connected to each of the vertical motion modules respectively, and is used to determine the fourth target control parameter of each horizontal motion module according to the sewage information before treatment and the sewage information after treatment collected by the water information collection module, and control the corresponding horizontal motion module according to the fourth target control parameter to drive the corresponding low-temperature plasma generating unit to move horizontally to adjust the plasma treatment intensity.

5. The sewage treatment system according to claim 3, characterized in that: The plasma processing module further includes a life detection module, which is respectively connected to the distributed plasma control module and the electrodes in each of the low-temperature plasma generating units, and is used to perform life detection on each of the electrodes and transmit the detected life to the distributed plasma control module; The distributed plasma control module is further configured to issue a prompt message to prompt for replacement of the corresponding low-temperature plasma generating unit when the lifetime reaches a preset lifetime threshold.

6. The sewage treatment system according to claim 1, characterized in that: The system further comprises: A temperature control module, connected to the distributed plasma control module, for controlling the temperature of the sewage before treatment under the control of the distributed plasma control module; A thermal management module is connected to the temperature control module and the plasma processing module, and is used to adjust the temperature of the temperature control module and the plasma processing module.

7. The sewage treatment system according to claim 1, characterized in that: The system further comprises: A power supply module is connected to the plasma processing module and the distributed plasma control module, and is used to supply power to the plasma processing module and the distributed plasma control module.

8. The sewage treatment system according to claim 6, characterized in that: The distributed plasma control module further includes: A storage device is used to store a pre-treatment scheme, wherein the pre-treatment scheme includes a scheme for controlling the temperature control module and the plasma treatment module generated by the distributed plasma control module according to the sewage information.

9. A method for treating sewage, characterized in that: The method is used in a sewage treatment system according to any one of claims 1 to 8, and the method comprises: Collect information on sewage to obtain information on sewage before and after treatment; The low-temperature plasma generating unit is controlled to move vertically according to the sewage information before treatment and the sewage information after treatment to adjust the plasma treatment density, and the plasma generated by the low-temperature plasma generating unit is used to treat the sewage.

10. An electronic device, characterized in that: The method comprises a memory, a processor and a computer program stored in the memory and running on the processor, wherein when the computer program is executed by the processor, the sewage treatment method according to claim 9 is implemented.

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