A kind of photovoltaic coating uniform gas distribution device suitable for

Abstract

This invention relates to the field of photovoltaic manufacturing technology, specifically to a gas equalization device suitable for photovoltaic coating. The device includes an upper cover plate, a lower main body, a left sealing plate, and a right sealing plate. The bottom of the upper cover plate is airtightly fixedly connected to the bottom of the lower main body to form the device body. A gas equalization channel is provided within the device body, which sequentially includes an air inlet, an air inlet passage, a gas storage chamber, a gas equalization hole, a buffer chamber, a gas resistance, another buffer chamber, another gas resistance, and an air outlet. A cooling water channel is provided at the lower part of the lower main body, located on both sides of the air outlet. The left and right sealing plates are airtightly fixedly connected to the lower ends of the lower main body, respectively. Corresponding water inlet or outlet interfaces are provided on the left and right sealing plates, and a thermocouple mounting hole is also provided on the left sealing plate. This gas equalization device suitable for advanced photovoltaic coating can ensure the uniformity of various reaction gases, controllable reaction gas temperature, and convenient operation, effectively improving the yield and efficiency of the coating process.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic manufacturing technology, and more specifically to a gas equalization device suitable for photovoltaic coating. Background Technology

[0002] Against the backdrop of rapid development in the global photovoltaic industry, China, as the world's largest photovoltaic manufacturer, saw its total photovoltaic industry output value exceed 1.75 trillion yuan in 2023, with an annual growth rate as high as 66%, demonstrating enormous market space and development potential. As the core component of the photovoltaic industry, the performance and manufacturing cost of photovoltaic cells directly affect the competitiveness and sustainable development of the entire industry. Coating, as a key step in the photovoltaic cell manufacturing process, plays a crucial role in improving the photoelectric conversion efficiency of the cells and achieving good passivation effects.

[0003] Currently, the thin-film deposition equipment widely used in traditional photovoltaic production includes PECVD (plasma-enhanced chemical vapor deposition), ALD (atomic layer deposition), and PVD (physical vapor deposition). These devices have a direct impact on production costs, output, and cell performance. However, traditional thin-film deposition equipment generally requires a vacuum environment, has slow deposition speeds, high equipment costs, and high operating expenses. These factors limit the production efficiency and cost control of photovoltaic cells.

[0004] Furthermore, the photoelectric conversion efficiency of traditional silicon crystal technology is nearing its theoretical limit, hovering between 23% and 27%, which is insufficient to meet the ever-increasing demand for higher efficiency. Therefore, new material stacking technology has emerged. This technology, by combining multiple materials, can significantly improve the photoelectric conversion efficiency of cells and is considered the future direction of the photovoltaic industry.

[0005] However, the realization of new material stacking technology requires a complex multi-stage process route, with thin film deposition being the most numerous and the most complex step. New materials are extremely sensitive to the uniformity of gas reactions, reaction time, and temperature conditions; prolonged heating can damage the material. Therefore, extremely high requirements are placed on the uniformity of thin film growth and temperature control. Traditional ALD technology, due to its slow deposition rate, is prone to film damage and cannot meet the stringent requirements of new material stacking technology.

[0006] To address the aforementioned issues, novel thin-film deposition processes place higher demands on the uniformity of reactant gas emission and temperature control. However, the market currently lacks advanced equipment or devices capable of effectively solving these problems. Therefore, developing a novel gas homogenizing device suitable for advanced photovoltaic coating to achieve more efficient and uniform gas reaction and thin-film deposition is of great significance for promoting technological progress and industrial upgrading in the photovoltaic industry.

[0007] In summary, the present invention aims to provide a novel gas homogenization device suitable for advanced photovoltaic coating, which solves the problems of gas reaction uniformity, deposition rate and temperature control in traditional thin film deposition equipment, provides strong support for the realization of new material stacking technology and promotes the sustainable and healthy development of the photovoltaic industry. Summary of the Invention

[0008] To address the aforementioned issues, this invention provides a gas uniformity device suitable for photovoltaic coating. This advanced photovoltaic coating gas uniformity device can ensure the uniformity of various reaction gases, controllable reaction gas temperature, and convenient operation, thereby effectively improving the yield and efficiency of the coating process.

[0009] The technical solution of the present invention is as follows:

[0010] A device for uniformly distributing gas in photovoltaic coating includes an upper cover plate, a lower body, a left sealing plate, and a right sealing plate. The bottom of the upper cover plate is airtightly fixedly connected to the bottom of the lower body to form the device body. A gas distribution channel is provided within the device body. The gas distribution channel includes, in sequence, an air inlet, an air inlet passage, an air storage chamber, a gas distribution hole, a buffer chamber, an air resistance, another air resistance, and an air outlet. The air inlet and the air outlet are respectively located at the top of the upper cover plate and the bottom of the lower body. The air storage chamber and the buffer chamber are connected by several gas distribution holes. A cooling water channel is provided at the bottom of the lower body, located on both sides of the air outlet. The left sealing plate and the right sealing plate are airtightly fixedly connected to the two ends of the lower part of the lower body. Corresponding water inlet or outlet interfaces are provided on the left sealing plate and the right sealing plate. A thermocouple mounting hole is also provided on the left sealing plate.

[0011] The upper cover plate is welded to the lower main body.

[0012] The uniform airflow channels include single-channel, double-channel, and four-channel systems. The single-channel system is located in the middle, while the double-channel and four-channel systems are arranged intersecting on both sides of the single-channel system.

[0013] The single channel consists of a single channel air inlet, a single channel air duct, a single channel air storage chamber, a single channel air distribution hole, a first single channel buffer chamber, a first single channel air resistance, a second single channel buffer chamber, a second single channel air resistance, and a single channel air outlet. The single channel air inlet is located on the upper part of the upper cover plate, and the single channel air outlet is located on the bottom of the lower main body.

[0014] The dual-channel system consists of a dual-channel air inlet, a dual-channel air duct, a dual-channel air storage chamber, a dual-channel air distribution hole, a first dual-channel buffer chamber, a first dual-channel air resistance, a second dual-channel buffer chamber, a second dual-channel air resistance, and a dual-channel air outlet. The dual-channel air inlet is located on the upper part of the upper cover plate, and the dual-channel air outlet is located on the bottom of the lower main body.

[0015] The four channels are composed of a four-channel air inlet, a four-channel air duct, a four-channel air storage chamber, a four-channel air distribution hole, a first four-channel buffer chamber, a first four-channel air resistance, a second four-channel buffer chamber, a second four-channel air resistance, and a four-channel air outlet. The four-channel air inlet is located on the upper part of the upper cover plate, and the four-channel air outlet is located on the bottom of the lower main body.

[0016] The top of the cover plate has mounting thread holes.

[0017] A locating pin is provided at the top of the upper cover plate.

[0018] The outer surfaces of the top cover, lower body, left sealing plate, and right sealing plate are hard anodized.

[0019] The upper cover plate and the lower main body are welded using a diffusion welding method.

[0020] The beneficial effects of this invention are as follows:

[0021] 1. This invention discloses a gas equalization device suitable for photovoltaic coating. This advanced photovoltaic coating gas equalization device, through a carefully designed gas equalization channel structure, including multiple components such as an air inlet, air inlet channel, gas storage chamber, gas equalization hole, buffer chamber, gas resistance, and air outlet, achieves uniform distribution and efficient deposition of reactive gases. In particular, through the combination of single-channel, dual-channel, and four-channel settings, it can flexibly meet the needs of different coating processes, ensuring that the coating uniformity is less than 3%, thereby significantly improving coating quality and process yield.

[0022] 2. The present invention discloses a gas equalization device suitable for photovoltaic coating. The cooling water channel set in the lower part of the main body of the advanced photovoltaic coating gas equalization device is connected to the inlet and outlet water pipes through the inlet and outlet water interfaces on the left and right sealing plates to form two cooling water loops, realizing precise control of the temperature of the gas equalization device; at the same time, the thermocouple mounting hole set in the left sealing plate allows the installation of thermocouples to monitor and control the temperature of the gas equalization device in real time and in a closed loop, further ensuring the temperature stability during the coating process.

[0023] 3. The present invention discloses a gas equalization device suitable for photovoltaic coating. The outer surface of the advanced photovoltaic coating gas equalization device is treated with hard anodizing. This treatment method can significantly improve the corrosion resistance of the device, extend its service life, and reduce maintenance costs.

[0024] 4. The present invention discloses a gas equalization device suitable for photovoltaic coating. This advanced photovoltaic coating gas equalization device is composed of an upper cover plate, a lower main body, a left sealing plate and a right sealing plate, which are welded together by diffusion welding to ensure the sealing performance of each channel. At the same time, the positioning pin and mounting threaded hole provided on the top of the upper cover plate make the installation of the device with the coating equipment bracket more convenient and quick, and improves work efficiency. Attached Figure Description

[0025] The solutions and advantages of this application will become clear to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention.

[0026] In the attached diagram:

[0027] Figure 1 This is a three-dimensional structural diagram of a photovoltaic coating gas equalization device according to an embodiment of the present invention. Figure 1 ;

[0028] Figure 2 This is a three-dimensional structural diagram of a photovoltaic coating gas equalization device according to an embodiment of the present invention. Figure 2 ;

[0029] Figure 3 This is a top view of a photovoltaic coating gas equalization device according to an embodiment of the present invention;

[0030] Figure 4 for Figure 3 Sectional view of AA;

[0031] Figure 5 for Figure 3 BB section view;

[0032] Figure 6 for Figure 3 CC section view;

[0033] Figure 7 for Figure 3 DD section view;

[0034] Figure 8 This is a top view of a photovoltaic coating gas equalization device according to an embodiment of the invention.

[0035] The components represented by the various reference numerals in the diagram are:

[0036] This invention comprises: 1. Upper cover plate; 2. Lower main body; 3. Left sealing plate; 4. Right sealing plate; 5. Positioning pin; 6. Single channel; 7. Double channel; 8. Four channel; 9. Cooling water channel; 101. Four-channel air inlet; 102. Single-channel air inlet; 103. Double-channel air inlet; 104. Mounting threaded hole; 301. Thermocouple mounting hole; 302. Water inlet interface one; 303. Water outlet interface two; 401. Water outlet interface one; 402. Water inlet interface two; 601. Single-channel air inlet; 602. Single-channel air storage chamber; 603. Single-channel air distribution hole; 604-1. First single-channel buffer chamber; 604-2. Second single channel Buffer chamber; 605-1 First single-channel air resistance; 605-2 Second single-channel air resistance; 701, Dual-channel air distribution channel; 702, Dual-channel air storage chamber; 703, Dual-channel air equalization hole; 704-1, First dual-channel buffer chamber; 704-2, Second dual-channel buffer chamber; 705-1, First dual-channel air resistance; 705-2, Second dual-channel air resistance; 801, Four-channel air distribution channel; 802, Four-channel air storage chamber; 803, Four-channel air equalization hole; 804-1, First four-channel buffer chamber; 804-2, Second four-channel buffer chamber; 805-1, First four-channel air resistance; 805-2, Second four-channel air resistance. Detailed Implementation

[0037] Example 1, as Figures 1 to 8 As shown, the gas equalization device designed with advanced photovoltaic coating technology mainly consists of four core components: an upper cover plate 1, a lower main body 2, a left sealing plate 3, and a right sealing plate 4. The bottom of the upper cover plate 1 and the bottom of the lower main body 2 are connected airtightly through a precision welding process, forming the main structure of the device. This welding process is preferably diffusion welding to ensure the strength and airtightness of the connection.

[0038] The gas equalization channel is the core component of the device of this invention. Its design is ingenious and complex, aiming to achieve uniform gas distribution and efficient utilization. The gas equalization channel includes several key parts in sequence, such as an air inlet, an air inlet passage, a gas storage chamber, a gas equalization hole, a buffer chamber, a gas resistance, a second buffer chamber, a second gas resistance, and an air outlet.

[0039] The air inlets are located on the top of the upper cover plate 1 to receive the reaction gas from the coating equipment.

[0040] The air intake duct connects the air inlet and the gas storage chamber, and is responsible for guiding the reactant gases to the gas storage chamber for initial distribution and diffusion.

[0041] The gas storage chamber is located after the air inlet and is used to store and further diffuse the reaction gas, ensuring that the gas reaches a uniform state before entering the gas distribution hole.

[0042] Evenly distributed gas distribution holes are located between the gas storage chamber and the buffer chamber, responsible for uniformly distributing gas to the buffer chamber. The number and distribution of these gas distribution holes are carefully calculated to achieve optimal gas distribution.

[0043] The buffer chamber is connected to the gas equalization hole to further buffer and stabilize the gas flow, reduce the generation of turbulence and vortex, and thus ensure that the gas can flow uniformly and stably in the subsequent gas resistance section.

[0044] The gas resistance is placed after the buffer chamber to increase the flow resistance of the gas, further regulating the gas flow rate and velocity. By adjusting the size and number of gas resistances, precise control of the gas flow can be achieved, ensuring that the gas reaches an ideal uniform state before the outlet.

[0045] The gas outlet is located at the bottom of the lower body 2 to discharge the uniformly distributed reaction gas to the coating area. The number and distribution of the gas outlets have also been carefully designed to ensure that the coating area receives a uniform and sufficient supply of reaction gas.

[0046] Furthermore, this invention provides various gas distribution channel designs, including single-channel 6, dual-channel 7, and four-channel 8. These channels can be selected and combined according to the specific requirements of the coating process to optimize gas distribution and coating effect.

[0047] To control the temperature of the gas distribution device and prevent a decrease in coating quality due to high temperature, a cooling water channel 9 is provided at the lower part of the lower body 2. This channel is located on both sides of the air outlet and uses circulating cooling water to reduce the temperature of the device. The left sealing plate 3 and the right sealing plate 4 are airtightly fixed to both ends of the lower part of the lower body 2 and are equipped with corresponding water inlet and outlet ports for connection to the cooling water system.

[0048] In addition, the left sealing plate 3 is provided with a thermocouple mounting hole 301 for mounting a thermocouple to monitor the temperature of the gas equalization device in real time. The temperature information fed back by the thermocouple enables closed-loop temperature control, ensuring that the gas equalization device is always maintained within its optimal operating temperature range.

[0049] To facilitate the installation and maintenance of the gas equalization device, the present invention provides a mounting threaded hole 104 and a positioning pin 5 on the top of the upper cover plate 1. The mounting threaded hole 104 allows the gas equalization device to be fixed to the bracket of the coating equipment using bolts or other fasteners. The positioning pin 5 is used to ensure the accurate positioning of the gas equalization device during the installation process, preventing performance degradation or malfunction due to improper installation.

[0050] To improve the corrosion resistance and service life of the gas equalization device, the outer surfaces of the upper cover plate 1, lower main body 2, left sealing plate 3, and right sealing plate 4 are subjected to hard anodizing treatment. This treatment significantly improves the hardness and wear resistance of the materials, while also increasing the surface's corrosion resistance. The hard anodized surfaces are smoother, flatter, and easier to clean, which helps maintain the good performance of the gas equalization device and extend its service life.

[0051] The uniform airflow channel includes a single channel 6, a double channel 7, and a four-channel 8. The single channel 6 is located in the middle, and the double channels 7 and the four-channel 8 are arranged intersecting on both sides of the single channel 6.

[0052] The single channel 6 is composed of a single channel air inlet 102, a single channel air inlet 601, a single channel air storage chamber 602, a single channel air distribution hole 603, a first single channel buffer chamber 604-1, a first single channel air resistance 605-1, a second single channel buffer chamber 604-2, a second single channel air resistance 605-2, and a single channel air outlet. The single channel air inlet 102 is located on the upper part of the upper cover plate 1, and the single channel air outlet is located on the bottom of the lower body 2.

[0053] The dual-channel 7 is composed of a dual-channel air inlet 103, a dual-channel air inlet 701, a dual-channel air storage chamber 702, a dual-channel air distribution hole 703, a first dual-channel buffer chamber 704-1, a first dual-channel air resistance 705-1, a second dual-channel buffer chamber 704-2, a second dual-channel air resistance 705-2, and a dual-channel air outlet. The dual-channel air inlet 103 is located on the upper part of the upper cover plate 1, and the dual-channel air outlet is located on the bottom of the lower body 2.

[0054] The four-channel 8 is composed of a four-channel air inlet 101, a four-channel air inlet 801, a four-channel air storage chamber 802, a four-channel air distribution hole 803, a first four-channel buffer chamber 804-1, a first four-channel air resistance 805-1, a second four-channel buffer chamber 804-2, a second four-channel air resistance 805-2, and a four-channel air outlet. The four-channel air inlet 101 is located on the upper part of the upper cover plate 1, and the four-channel air outlet is located on the bottom of the lower body 2.

[0055] Example 2 describes a gas equalization device suitable for advanced photovoltaic coating equipment. The device comprises an upper cover plate, a lower main body, a left sealing plate, and a right sealing plate, all welded using diffusion welding to ensure the sealing performance of each channel. The upper cover plate has three air inlets at its top, each connected to an air inlet pipe, for introducing three different reactive gases. The upper cover plate and lower main body contain a complex structure including air inlet channels, gas distribution channels, a gas storage chamber, gas equalization orifices, a double buffer chamber, double gas resistance, and an air outlet, to achieve a gas flow rate uniformity of less than 3% at the outlet.

[0056] The top of the cover plate has three air inlets, corresponding to a four-channel air inlet, a single-channel air inlet, and a dual-channel air inlet, respectively, for introducing three different reaction gases. The gases enter the gas distribution channel through the air inlet channel and are evenly distributed into the seven internal channels.

[0057] The seven internal channels are configured as single-channel, double-channel, and four-channel systems, each equipped with a gas storage chamber, gas equalization orifice, double buffer chamber, double air resistance, and gas outlet. This series of structural designs ensures that the uniformity of the discharged gas flow rate is less than 3%.

[0058] Cooling water channels are provided on both sides of the lower part of the main body, which are connected to inlet and outlet water pipes through inlet and outlet water interfaces on the left and right sealing plates to form two cooling water circuits. At the same time, thermocouple mounting holes are provided on the left sealing plate for installing thermocouples to monitor and control the temperature of the gas distribution device in real time.

[0059] The outer surface of the gas distribution device is subjected to hard anodizing treatment to improve the device's corrosion resistance.

[0060] The top of the cover plate is equipped with locating pins and threaded mounting holes for installation with the coating equipment bracket. The device has a simple structure, is easy to disassemble and install, and has good maintainability.

[0061] The reaction gas O enters the single channel 6 through the single channel inlet 102, passes through the single channel inlet 601 and enters the single channel gas storage chamber 602. After being fully diffused, it is evenly distributed through the single channel gas equalization hole 603, and then is buffered and evenly distributed again through the double single channel buffer chamber and the double single channel gas resistance before being discharged.

[0062] The reaction gas M enters the dual-channel 7 through the dual-channel inlet 103. The gas M is evenly distributed into two paths through the dual-channel gas distribution channel 701 and enters the dual-channel gas storage chamber 702. After sufficient diffusion, the gas is evenly distributed through the dual-channel gas equalization hole 703. Then, it is buffered and evenly distributed again through the double dual-channel buffer chamber 704 and the double dual-channel gas resistance 705 before being discharged.

[0063] The reactive gas N enters the four-channel 8 through the four-channel inlet 101. The gas N is evenly distributed into four paths through the four-channel gas distribution channel 801 and enters the four-channel gas storage chamber 802. After sufficient diffusion, the gas is evenly distributed through the four-channel gas equalization hole 803. Then, it is buffered and evenly distributed again through the double four-channel buffer chamber 804 and the double four-channel gas resistance 805 before being discharged.

[0064] The lower part of the main body 2 is provided with a cooling water channel 9, which is connected to the inlet and outlet water pipes through the inlet and outlet water interfaces on the left sealing plate 3 and the right sealing plate 4 to form two cooling water circuits. The left sealing plate 3 is provided with a thermocouple mounting hole 301 for installing a thermocouple to monitor and control the temperature of the gas equalization device in real time.

[0065] The gas uniformization device of this invention provides a core component solution for advanced new superposition manufacturing processes in the photovoltaic manufacturing industry. It achieves uniformity of reactive gas deposition and controllable temperature, effectively improving the yield and efficiency of the coating process. Simultaneously, it employs strong corrosion resistance measures, extending the product's service life. The device has a simple structure, is easy to disassemble and install, and possesses good maintainability, providing strong support for the optimization and upgrading of photovoltaic coating processes.

Claims

1. A gas equalization device suitable for photovoltaic coating, characterized in that, The device includes an upper cover plate (1), a lower body (2), a left sealing plate (3), and a right sealing plate (4). The bottom of the upper cover plate (1) is airtightly fixedly connected to the bottom of the lower body (2) to form the device body. A gas equalization channel is provided in the device body. The gas equalization channel includes an air inlet, an air inlet passage, an air storage chamber, a gas equalization hole, a buffer chamber, a gas resistance, a buffer chamber, a gas resistance, and an air outlet. The air inlet and the air outlet are respectively located at the top of the upper cover plate (1) and the bottom of the lower body (2). The air storage chamber and the buffer chamber are connected by several gas equalization holes. A cooling water channel (9) is provided at the bottom of the lower body (2). The cooling water channel (9) is located on both sides of the air outlet. The left sealing plate (3) and the right sealing plate (4) are airtightly fixed. The two ends of the lower part of the main body (2) are fixedly connected to the lower part of the main body (2). Corresponding water inlet or outlet interfaces are provided on the left sealing plate (3) and the right sealing plate (4). A thermocouple mounting hole (301) is also provided on the left sealing plate (3). The gas equalization channel includes a single channel (6), a double channel (7) and a four-channel (8). The single channel (6) is set in the middle. The double channel (7) and the four-channel (8) are arranged in a cross pattern on both sides of the single channel (6). The top of the upper cover plate is provided with three air inlets, which correspond to the four-channel air inlet, the single-channel air inlet and the double-channel air inlet, respectively, for introducing three different reaction gases. The gas enters the gas distribution channel through the air inlet channel and is evenly distributed to the seven internal channels.

2. The vapor distribution device for photovoltaic coating according to claim 1, characterized in that, The upper cover plate (1) is welded to the lower body (2).

3. The vapor distribution device for photovoltaic coating according to claim 2, characterized in that, The single channel (6) is composed of a single channel air inlet (102), a single channel air inlet (601), a single channel air storage chamber (602), a single channel air distribution hole (603), a first single channel buffer chamber (604-1), a first single channel air resistance (605-1), a second single channel buffer chamber (604-2), a second single channel air resistance (605-2), and a single channel air outlet. The single channel air inlet (102) is located on the upper part of the upper cover plate (1), and the single channel air outlet is located on the bottom of the lower body (2).

4. The vapor distribution device for photovoltaic coating according to claim 3, characterized in that, The dual channels (7) are composed of a dual-channel air inlet (103), a dual-channel air inlet (701), a dual-channel air storage chamber (702), a dual-channel air distribution hole (703), a first dual-channel buffer chamber (704-1), a first dual-channel air resistance (705-1), a second dual-channel buffer chamber (704-2), a second dual-channel air resistance (705-2), and a dual-channel air outlet. The dual-channel air inlet (103) is located on the upper part of the upper cover plate (1), and the dual-channel air outlet is located on the bottom of the lower body (2).

5. A gas equalization device suitable for photovoltaic coating according to claim 3, characterized in that, The four channels (8) are composed of a four-channel air inlet (101), a four-channel air inlet (801), a four-channel air storage chamber (802), a four-channel air distribution hole (803), a first four-channel buffer chamber (804-1), a first four-channel air resistance (805-1), a second four-channel buffer chamber (804-2), a second four-channel air resistance (805-2), and a four-channel air outlet. The four-channel air inlet (101) is located on the upper part of the upper cover plate (1), and the four-channel air outlet is located on the bottom of the lower body (2).

6. The vapor distribution device for photovoltaic coating according to claim 1, characterized in that, A mounting threaded hole (104) is provided on the top of the upper cover plate (1).

7. A gas equalization device suitable for photovoltaic coating according to claim 1, characterized in that, A positioning pin (5) is provided on the top of the upper cover plate (1).

8. A gas equalization device suitable for photovoltaic coating according to claim 1, characterized in that, The outer surfaces of the upper cover plate (1), lower body (2), left sealing plate (3) and right sealing plate (4) are hard anodized.

9. A gas equalization device suitable for photovoltaic coating according to claim 2, characterized in that, The upper cover plate (1) and the lower body (2) are welded using a diffusion welding method.

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