Ultrahigh vacuum chemical vapor deposition system

Abstract

The invention provides an ultrahigh vacuum chemical vapor deposition system, and belongs to the field of vapor deposition equipment. The system comprises a sample transfer chamber (1), a low-temperature pretreatment chamber (2), a high-temperature pretreatment chamber (3), a transition chamber (4), an intrinsic material epitaxial chamber (5), an n-type material epitaxial chamber (6) and a p-type material epitaxial chamber (7). The system is provided with a plurality of chambers, is suitable for epitaxial growth of IV-group materials such as silicon, germanium, silicon-germanium alloy, germanium-tin alloy, silicon-germanium-tin alloy and the like, is also suitable for epitaxial growth of semiconductor materials with multi-layer film structures containing different doping concentrations and different material types, and has the capability of realizing the epitaxial growth of the IV-group materials under the condition that a sample does not need to be taken out midway. And a novel semiconductor multilayer structure with high quality and accurate doping concentration can be prepared at one time.

Description

Technical Field

[0001] The invention belongs to the technical field of vapor deposition equipment, and in particular relates to an ultra-high vacuum chemical vapor deposition system. Background Art

[0002] In recent years, Group IV semiconductor materials have received extensive attention in the field of silicon-based optoelectronics. At present, various devices for silicon-based optical interconnection, including modulators, waveguides and detectors, have developed products with good performance, but the problem of silicon-based light sources still needs to be further solved. At present, silicon (Si), germanium (Ge), silicon-germanium (SiGe) alloys, and germanium-tin (GeSn) alloys are widely studied and designed and prepared as new optoelectronic devices. By growing high-quality semiconductor multilayer structures with accurate doping concentrations, the performance of the device can be effectively improved.

[0003] At present, the epitaxial growth methods of silicon-based Group IV semiconductor materials mainly include chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). Chemical vapor deposition technology is the main method for epitaxial growth of silicon-based Group IV semiconductor materials. By selecting appropriate precursors, regulating the growth temperature and chamber pressure, high-quality epitaxial growth of silicon, germanium, silicon-germanium alloy and germanium-tin alloy can be achieved. However, for semiconductor devices, it is often necessary to design a unique structure with multiple layers of different materials and different doping types. A typical example is that the pin-type homojunction detector structure integrating GeSn on a silicon wafer requires at least 4 epitaxial layers, namely p-type GeSn / i-type GeSn / n-type GeSn / i-type Ge / Si substrate. If the design of quantum well structure is involved, the number of layers required for the device will increase significantly. The doping methods of silicon-based Group IV semiconductor materials mainly include ion implantation and in-situ growth. The ion implantation method is to inject the doping elements into the material in a certain orientation after the epitaxial growth of the material, which will damage the crystal quality of the epitaxial layer. The chemical vapor deposition technology can realize the in-situ growth of epitaxial materials while doping them, which can effectively improve the crystal quality of the epitaxial layer. Summary of the invention

[0004] The present invention is made based on the inventor's discovery and understanding of the following facts and problems: most of the previous chemical vapor deposition equipment only has one growth chamber and cannot achieve continuous multi-layer semiconductor structure growth.

[0005] The present invention aims to solve one of the technical problems in the related art at least to some extent. To this end, an embodiment of the present invention provides an ultra-high vacuum chemical vapor deposition system suitable for epitaxial growth of semiconductor materials including multilayer film structures with different doping concentrations and material types.

[0006] The embodiment of the present invention provides an ultra-high vacuum chemical vapor deposition system, comprising: a sample transfer chamber 1, a low-temperature pretreatment chamber 2, a high-temperature pretreatment chamber 3, a transition chamber 4, an intrinsic material epitaxial chamber 5, an n-type material epitaxial chamber 6 and a p-type material epitaxial chamber 7; the outlet of the sample transfer chamber 1 is connected to the inlet of the low-temperature pretreatment chamber 2 through a first gate valve O1-2; the outlet of the low-temperature pretreatment chamber 2 is connected to the inlet of the high-temperature pretreatment chamber 3 through a second gate valve O2-3; the outlet of the high-temperature pretreatment chamber 3 is connected to the first inlet of the transition chamber 4 through a third gate valve O3-4; the outlet of the intrinsic material epitaxial chamber 5 is connected to the second inlet of the transition chamber 4 through a fifth gate valve O4-5; the outlet of the n-type material epitaxial chamber 6 is connected to the third inlet of the transition chamber 4 through a sixth gate valve O4-6; the outlet of the p-type material epitaxial chamber 7 is connected to the fourth inlet of the transition chamber 4 through a seventh gate valve O4-7; and the sample can be transferred between different chambers.

[0007] The advantages and technical effects brought by the system of the embodiment of the present invention are as follows:

[0008] The system of the embodiment of the present invention has multiple chambers, which is suitable for the epitaxial growth of Group IV materials such as silicon, germanium, silicon-germanium alloy, germanium-tin alloy, silicon-germanium-tin alloy, etc., and is also suitable for the epitaxial growth of semiconductor materials including multilayer film structures with different doping concentrations and different material types. It is capable of preparing high-quality, high-precision doping concentration new semiconductor multilayer structures in one go without taking out samples midway.

[0009] Optionally, the following is a system in single chip mode.

[0010] In some embodiments, a first hatch K1 is provided at the entrance of the sample transfer chamber 1, and a first sample transfer rod (A1) transversely passes through the first hatch K1 and extends into the sample transfer chamber 1. A first transverse forked sample holder Aa1 is provided at the front end of the first sample transfer rod A1 located in the sample transfer chamber 1. The first sample transfer rod A1 can also extend into the low-temperature pretreatment chamber 2, the high-temperature pretreatment chamber 3 and the transition chamber 4. A first pump group interface B1 is provided on the sample transfer chamber 1, and the first pump group interface B1 is connected to the first molecular pump-mechanical pump group. A first gas pipeline interface Ec1 is provided on the sample transfer chamber 1, and the first gas pipeline interface Ec1 is connected to the purge gas pipeline. A first vacuum measuring device G1 is provided on the sample transfer chamber 1.

[0011] In some embodiments, a second longitudinal forked sample holder lifting and rotating mechanism La2 is provided at the bottom of the low-temperature pretreatment chamber 2, and a second longitudinal forked sample holder L2 is provided at the top of the second longitudinal forked sample holder lifting and rotating mechanism La2 extending into the low-temperature pretreatment chamber 2, and the second longitudinal forked sample holder L2 and the first sample transfer rod A1 are in the same longitudinal plane, a second pump group interface B2 is provided on the low-temperature pretreatment chamber 2, and the second pump group interface B2 is connected to the second molecular pump-mechanical pump group, and a second pressure feedback control device F2 is provided on the second pump group interface B2, a second gas pipeline interface Eb2 is provided on the low-temperature pretreatment chamber 2, and the second gas pipeline interface Eb2 is connected to the cleaning gas pipeline, and a second vacuum measuring device G2 is provided on the low-temperature pretreatment chamber 2.

[0012] In some embodiments, a heating plate J3 and a heating plate position control mechanism Ja3 are provided in the high temperature pretreatment chamber 3, a third longitudinal forked sample holder lifting and rotating mechanism La3 is provided at the bottom of the high temperature pretreatment chamber 3, a third longitudinal forked sample holder lifting and rotating mechanism La3 extending into the high temperature pretreatment chamber 3 is provided with a third longitudinal forked sample holder L3 at the top, the third longitudinal forked sample holder L3 is located below the heating plate J3, the third longitudinal forked sample holder L3 and the first sample transfer rod A1 are in the same longitudinal plane, a third pump group interface B3 is provided on the high temperature pretreatment chamber 3, the third pump group interface B3 is connected to the third molecular pump-mechanical pump group, and a third vacuum measuring device G3 is provided on the high temperature pretreatment chamber 3.

[0013] In some embodiments, a fourth longitudinal forked sample holder lifting and rotating mechanism La4 is provided at the bottom of the transition chamber 4, and a fourth longitudinal forked sample holder L4 is provided at the top end of the fourth longitudinal forked sample holder lifting and rotating mechanism La4 extending into the transition chamber 4. The fourth longitudinal forked sample holder L4 and the first sample transfer rod A1 are in the same longitudinal plane, a fourth pump group interface B4 is provided on the transition chamber 4, the fourth pump group interface B4 is connected to the fourth molecular pump-mechanical pump group, and a fourth vacuum measuring device G4 is provided on the transition chamber 4.

[0014] In some embodiments, a fifth hatch K5 is provided at the entrance of the intrinsic material epitaxial chamber 5, a fifth sample transfer rod A5 extends into the intrinsic material epitaxial chamber 5 through the fifth hatch K5 transversely, a fifth transverse forked sample holder Aa5 is provided at the front end of the fifth sample transfer rod A5 located in the intrinsic material epitaxial chamber 5, the fifth sample transfer rod A5 can also extend into the transition chamber 4, the epitaxial region of the intrinsic material epitaxial chamber 5 is a fifth quartz tube reaction chamber H5, a fifth tubular heating furnace I5 is provided on the outer wall of the fifth quartz tube reaction chamber H5, a fifth longitudinal forked sample holder lifting and rotating mechanism La5 is provided at the bottom of the fifth quartz tube reaction chamber H5, and the fifth longitudinal forked sample holder lifting and rotating mechanism La5 extends into the fifth quartz tube reaction chamber A fifth longitudinal forked sample holder L5 is arranged at the top of the chamber H5, and the fifth longitudinal forked sample holder L5 and the first sample transfer rod A1 are in the same longitudinal plane; a fifth pump group interface B5 is arranged on the intrinsic material epitaxial chamber 5, and the fifth pump group interface B5 is connected to the fifth molecular pump-mechanical pump group and the fifth mechanical pump for epitaxial process; a fifth gas pipeline interface Ea5 is arranged on the intrinsic material epitaxial chamber 5 near the fifth hatch 5, and the fifth gas pipeline interface Ea5 is connected to the fifth epitaxial gas pipeline; a fifth vacuum measuring device G5 is arranged on the intrinsic material epitaxial chamber 5, and a fifth pressure feedback control device F5 is arranged on the intrinsic material epitaxial chamber 5 at a position between the fifth quartz tube reaction chamber H5 and the fifth pump group interface B5.

[0015] In some embodiments, a sixth hatch K6 is provided at the entrance of the n-type material epitaxial chamber 6, a sixth sample transfer rod A6 extends into the n-type material epitaxial chamber 6 through the sixth hatch K6, a sixth transverse forked sample holder Aa6 is provided at the front end of the sixth sample transfer rod A6 located in the n-type material epitaxial chamber 6, the sixth sample transfer rod A6 can also extend into the transition chamber 4, the epitaxial region of the n-type material epitaxial chamber 6 is a sixth quartz tube reaction chamber H6, a sixth tube heating furnace I6 is provided on the outer wall of the sixth quartz tube reaction chamber H6, a sixth longitudinal forked sample holder lifting and rotating mechanism La6 is provided at the bottom of the sixth quartz tube reaction chamber H6, and the sixth longitudinal forked sample holder lifting and rotating mechanism La6 extends into the sixth quartz tube reaction chamber A sixth longitudinal forked sample holder L6 is arranged at the top of the chamber H6, and the sixth longitudinal forked sample holder L6 and the first sample transfer rod A1 are in the same longitudinal plane; a sixth pump group interface B6 is arranged on the n-type material epitaxial chamber 6, and the fifth pump group interface B6 is connected to the sixth molecular pump-mechanical pump group and the sixth mechanical pump for epitaxial process; a sixth gas pipeline interface Ea6 is arranged on the n-type material epitaxial chamber 6 near the sixth hatch 6, and the sixth gas pipeline interface Ea6 is connected to the sixth epitaxial gas pipeline; a sixth vacuum measuring device G6 is arranged on the n-type material epitaxial chamber 6; a sixth pressure feedback control device F6 is arranged on the n-type material epitaxial chamber 6 at a position between the sixth quartz tube reaction chamber H6 and the sixth pump group interface B6.

[0016] In some embodiments, a seventh hatch K7 is provided at the entrance of the p-type material epitaxial chamber 7, a seventh sample transfer rod A7 extends transversely through the seventh hatch K7 into the p-type material epitaxial chamber 7, a seventh transverse forked sample holder Aa7 is provided at the front end of the seventh sample transfer rod A7 located in the p-type material epitaxial chamber 7, the seventh sample transfer rod A7 can also extend into the transition chamber 4, the epitaxial region of the p-type material epitaxial chamber 7 is a seventh quartz tube reaction chamber H7, a seventh tube heating furnace I7 is provided on the outer wall of the seventh quartz tube reaction chamber H7, a seventh longitudinal forked sample holder lifting and rotating mechanism La7 is provided at the bottom of the seventh quartz tube reaction chamber H7, the seventh longitudinal forked sample holder lifting and rotating mechanism La7 extends into the seventh quartz tube reaction chamber A seventh longitudinal forked sample holder L7 is arranged at the top of the chamber H7, and the seventh longitudinal forked sample holder L7 and the seventh sample transfer rod A7 are located in the same longitudinal plane; a seventh pump group interface B7 is arranged on the p-type material epitaxial chamber 7, and the seventh pump group interface B7 is connected to the seventh molecular pump-mechanical pump group and the seventh mechanical pump for epitaxial process; a seventh gas pipeline interface Ea7 is arranged on the p-type material epitaxial chamber 7 near the seventh hatch 7, and the seventh gas pipeline interface Ea7 is connected to the seventh epitaxial gas pipeline; a seventh vacuum measuring device G7 is arranged on the p-type material epitaxial chamber 7; a seventh pressure feedback control device F7 is arranged on the p-type material epitaxial chamber 7 at a position between the seventh quartz tube reaction chamber H7 and the seventh pump group interface B7.

[0017] In some embodiments, the high temperature pretreatment chamber 3 , the intrinsic material epitaxial chamber 5 , the n-type material epitaxial chamber 6 , and the p-type material epitaxial chamber 7 are arranged in an orthogonal manner around the transition chamber 4 .

[0018] Optionally, the following is a system in multi-chip mode.

[0019] In some embodiments, a first hatch K1 is provided at the entrance of the sample transfer chamber 1, a first sample transfer rod (A1) extends transversely through the first hatch K1 into the sample transfer chamber 1, a first rotating escapement hook Ab1 is provided at the front end of the first sample transfer rod A1 located in the sample transfer chamber 1, the first sample transfer rod A1 can also extend into the low-temperature pretreatment chamber 2, the high-temperature pretreatment chamber 3 and the transition chamber 4, a first quartz boat track P1 extending toward the transition chamber 4 is transversely provided at the bottom of the sample transfer chamber 1, the top of the first quartz boat track P1 is slidably connected to the bottom of the quartz boat M, a first pump group interface B1 is provided on the sample transfer chamber 1, the first pump group interface B1 is connected to the first molecular pump-mechanical pump group, a first gas pipeline interface Ec1 is provided on the sample transfer chamber 1, the first gas pipeline interface Ec1 is connected to the purge gas pipeline, and a first vacuum measuring device G1 is provided on the sample transfer chamber 1.

[0020] In some embodiments, a second quartz boat track P2 extending toward the transition chamber 4 is laterally arranged at the bottom of the low-temperature pretreatment chamber 2, and the second quartz boat track P2 is on the same straight line as the first quartz boat track P1. A second pump group interface B2 is arranged on the low-temperature pretreatment chamber 2, and the second pump group interface B2 is connected to the second molecular pump-mechanical pump group. A second pressure feedback control device F2 is arranged on the second pump group interface B2. A second gas pipeline interface Eb2 is arranged on the low-temperature pretreatment chamber 2, and the second gas pipeline interface Eb2 is connected to the cleaning gas pipeline. A second vacuum measuring device G2 is arranged on the low-temperature pretreatment chamber 2.

[0021] In some embodiments, the epitaxial region in the high-temperature pretreatment chamber 3 is a third quartz tube reaction chamber H3, a third tube heating furnace I3 is arranged on the outer wall of the third quartz tube reaction chamber H3, a third quartz boat track P3 extending toward the transition chamber 4 is arranged laterally at the bottom of the high-temperature pretreatment chamber 3, the third quartz boat track P3 is in a straight line with the first quartz boat track P1, a third pump group interface B3 is arranged on the high-temperature pretreatment chamber 3, the third pump group interface B3 is connected to the third molecular pump-mechanical pump group, and a third vacuum measuring device G3 is arranged on the high-temperature pretreatment chamber 3.

[0022] In some embodiments, a track-type sample holder rotating mechanism Na and a track-type sample holder N fixed to the top of the track-type sample holder rotating mechanism Na are longitudinally arranged at the bottom of the transition chamber 4, a fourth pump group interface B4 is arranged on the transition chamber 4, the fourth pump group interface B4 is connected to the fourth molecular pump-mechanical pump group, and a fourth vacuum measuring device G4 is arranged on the transition chamber 4.

[0023] In some embodiments, the entrance of the intrinsic material epitaxial chamber 5 is provided with a fifth hatch K5, the fifth sample transfer rod A5 extends into the intrinsic material epitaxial chamber 5 transversely through the fifth hatch K5, the front end of the fifth sample transfer rod A5 located in the intrinsic material epitaxial chamber 5 is provided with a fifth rotating escapement hook Ab5, the fifth sample transfer rod A5 can also extend into the transition chamber 4, the epitaxial region of the intrinsic material epitaxial chamber 5 is a fifth quartz tube reaction chamber, the outer wall of the fifth quartz tube reaction chamber is provided with a fifth tubular heating furnace I5, and the bottom of the intrinsic material epitaxial chamber 5 is transversely provided with a fifth extending toward the transition chamber 4. Quartz boat track P5, the intrinsic material epitaxial chamber 5 is provided with a fifth pump group interface B5, the fifth pump group interface B5 is connected to the fifth molecular pump-mechanical pump group and the fifth epitaxial process mechanical pump, the intrinsic material epitaxial chamber 5 is provided with a fifth gas pipeline interface Ea5 near the fifth hatch 5, the fifth gas pipeline interface Ea5 is connected to the fifth epitaxial gas pipeline, the intrinsic material epitaxial chamber 5 is provided with a fifth vacuum measuring device G5, and the intrinsic material epitaxial chamber 5 is provided with a fifth pressure feedback control device F5 at a position between the fifth quartz tube reaction chamber H5 and the fifth pump group interface B5.

[0024] In some embodiments, a sixth hatch K6 is provided at the entrance of the n-type material epitaxial chamber 6, a sixth sample transfer rod A6 extends transversely through the sixth hatch K6 into the n-type material epitaxial chamber 6, a sixth rotating escapement hook Ab6 is provided at the front end of the sixth sample transfer rod A6 located in the n-type material epitaxial chamber 6, the sixth sample transfer rod A6 can also extend into the transition chamber 4, the epitaxial region of the n-type material epitaxial chamber 6 is a sixth quartz tube reaction chamber H6, a sixth tubular heating furnace I6 is provided on the outer wall of the sixth quartz tube reaction chamber H6, and a sixth tubular heating furnace I6 is provided transversely at the bottom of the n-type material epitaxial chamber 6 extending toward the transition chamber 4. The sixth quartz boat track P6, the n-type material epitaxial chamber 6 is provided with a sixth pump group interface B6, the sixth pump group interface B6 is connected to the sixth molecular pump-mechanical pump group and the sixth mechanical pump for epitaxial process, the n-type material epitaxial chamber 6 is provided with a sixth gas pipeline interface Ea6 near the sixth hatch 6, the sixth gas pipeline interface Ea6 is connected to the sixth epitaxial gas pipeline, the n-type material epitaxial chamber 6 is provided with a sixth vacuum measuring device G6, the n-type material epitaxial chamber 6 is provided with a sixth pressure feedback control device F6 at a position between the sixth quartz tube reaction chamber H6 and the sixth pump group interface B6.

[0025] In some embodiments, the entrance of the p-type material epitaxial chamber 7 is provided with a seventh hatch K7, the seventh sample transfer rod A7 horizontally passes through the seventh hatch K7 and extends into the p-type material epitaxial chamber 7, the front end of the seventh sample transfer rod A7 located in the p-type material epitaxial chamber 7 is provided with a seventh rotating escapement hook Ab7, the seventh sample transfer rod A7 can also extend into the transition chamber 4, the epitaxial region of the p-type material epitaxial chamber 7 is the seventh quartz tube reaction chamber H7, the outer wall of the seventh quartz tube reaction chamber H7 is provided with a seventh tubular heating furnace I7, and the bottom of the p-type material epitaxial chamber 7 is horizontally provided with a seventh tubular heating furnace I7 extending toward the transition chamber 4. The seventh quartz boat track P7, the p-type material epitaxial chamber 7 is provided with a seventh pump group interface B7, the seventh pump group interface B7 is connected to the seventh molecular pump-mechanical pump group and the seventh mechanical pump for epitaxial process, the p-type material epitaxial chamber 7 is provided with a seventh gas pipeline interface Ea7 near the seventh hatch 7, the seventh gas pipeline interface Ea7 is connected to the seventh epitaxial gas pipeline, the p-type material epitaxial chamber 7 is provided with a seventh vacuum measuring device G7, the p-type material epitaxial chamber 7 is provided with a seventh pressure feedback control device F7 at a position between the seventh quartz tube reaction chamber H7 and the seventh pump group interface B7.

[0026] In some embodiments, the high temperature pretreatment chamber 3 , the intrinsic material epitaxial chamber 5 , the n-type material epitaxial chamber 6 , and the p-type material epitaxial chamber 7 are arranged in an orthogonal manner around the transition chamber 4 . BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1It is a schematic diagram of the three-dimensional structure of the system in the single-chip mode according to an embodiment of the present invention.

[0028] Figure 2 is a cross-sectional view of a system in a single-chip mode according to an embodiment of the present invention.

[0029] Figure 3 yes Figure 2 Schematic diagram of the structure of the cross section shown.

[0030] Figure 4 is another cross-sectional view of the system in the single-chip mode according to an embodiment of the present invention.

[0031] Figure 5 yes Figure 4 Schematic diagram of the structure of the cross section shown.

[0032] Figure 6 It is a schematic diagram of the working principle of the longitudinally bifurcated sample holder and the sample holder lifting and rotating mechanism in the system in the single-chip mode of an embodiment of the present invention.

[0033] Figure 7 It is a schematic diagram of the three-dimensional structure of the system in the multi-chip mode according to an embodiment of the present invention.

[0034] Figure 8 It is a schematic diagram of the three-dimensional structure of the quartz boat track and the track-type sample holder rotating mechanism and the track-type sample holder in the system in the multi-plate mode of an embodiment of the present invention.

[0035] Fig. 9 Schematic diagram of the working principle of the track-type sample holder and the track-type sample holder rotation mechanism in the system in the multi-plate mode of an embodiment of the present invention. DETAILED DESCRIPTION

[0036] Embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings. The embodiments described below with reference to the accompanying drawings are exemplary and intended to be used to explain the present invention, but should not be understood as limiting the present invention.

[0037] The embodiment of the present invention provides an ultra-high vacuum chemical vapor deposition system, such as Figure 1-9As shown, it includes: a sample transfer chamber 1, a low-temperature pretreatment chamber 2, a high-temperature pretreatment chamber 3, a transition chamber 4, an intrinsic material epitaxial chamber 5, an n-type material epitaxial chamber 6 and a p-type material epitaxial chamber 7; the outlet of the sample transfer chamber 1 is connected to the inlet of the low-temperature pretreatment chamber 2 through a first gate valve O1-2; the outlet of the low-temperature pretreatment chamber 2 is connected to the inlet of the high-temperature pretreatment chamber 3 through a second gate valve O2-3; the outlet of the high-temperature pretreatment chamber 3 is connected to the first inlet of the transition chamber 4 through a third gate valve O3-4; the outlet of the intrinsic material epitaxial chamber 5 is connected to the second inlet of the transition chamber 4 through a fifth gate valve O4-5; the outlet of the n-type material epitaxial chamber 6 is connected to the third inlet of the transition chamber 4 through a sixth gate valve O4-6; the outlet of the p-type material epitaxial chamber 7 is connected to the fourth inlet of the transition chamber 4 through a seventh gate valve O4-7; the sample can be transferred between different chambers.

[0038] The system of the embodiment of the present invention has multiple chambers, which is suitable for the epitaxial growth of Group IV materials such as silicon, germanium, silicon-germanium alloy, germanium-tin alloy, silicon-germanium-tin alloy, etc., and is also suitable for the epitaxial growth of semiconductor materials including multilayer film structures with different doping concentrations and different material types. It is capable of preparing high-quality, high-precision doping concentration new semiconductor multilayer structures in one go without taking out samples midway.

[0039] Alternatively, if Figure 1-6 As shown below, this is a system in single-chip mode, where the transported samples are single-chip samples.

[0040] In some embodiments, a first hatch K1 is provided at the entrance of the sample transfer chamber 1, a first sample transfer rod A1 extends into the sample transfer chamber 1 through the first hatch K1 transversely, a first transverse forked sample holder Aa1 is provided at the front end of the first sample transfer rod A1 located in the sample transfer chamber 1, the first sample transfer rod A1 can also extend into the low-temperature pretreatment chamber 2, the high-temperature pretreatment chamber 3 and the transition chamber 4, a first pump group interface B1 is provided on the sample transfer chamber 1, the first pump group interface B1 is connected to the first molecular pump-mechanical pump group, a first gas pipeline interface Ec1 is provided on the sample transfer chamber 1, the first gas pipeline interface Ec1 is connected to the purge gas pipeline, and a first vacuum measuring device G1 is provided on the sample transfer chamber 1.

[0041] In some embodiments, a second forked sample holder lifting and rotating mechanism La2 is provided at the bottom of the low temperature pretreatment chamber 2, a second longitudinal forked sample holder L2 is provided at the top of the second forked sample holder lifting and rotating mechanism La2 extending into the low temperature pretreatment chamber 2, the second longitudinal forked sample holder L2 and the first sample transfer rod A1 are in the same longitudinal plane, a second pump group interface B2 is provided on the low temperature pretreatment chamber 2, the second pump group interface B2 is connected to the second molecular pump-mechanical pump group, a second pressure feedback control device F2 is provided on the second pump group interface B2, a second gas pipeline interface Eb2 is provided on the low temperature pretreatment chamber 2, the second gas pipeline interface Eb2 is connected to the cleaning gas pipeline, and a second vacuum measuring device G2 is provided on the low temperature pretreatment chamber 2. It should be understood that the second pressure feedback control device F2 belongs to the front-stage equipment of the second molecular pump-mechanical pump group, is mainly responsible for the pressure regulation in the low temperature pretreatment chamber 2, and is part of the gas path structure.

[0042] In some embodiments, a heating plate J3 and a heating plate position control mechanism Ja3 are provided in the high-temperature pretreatment chamber 3, a third forked sample holder lifting and rotating mechanism La3 is provided at the bottom of the high-temperature pretreatment chamber 3, a third longitudinal forked sample holder L3 is provided at the top of the third forked sample holder lifting and rotating mechanism La3 extending into the high-temperature pretreatment chamber 3, the third longitudinal forked sample holder L3 is located below the heating plate J3, the third longitudinal forked sample holder L3 and the first sample transfer rod A1 are in the same longitudinal plane, a third pump group interface B3 is provided on the high-temperature pretreatment chamber 3, the third pump group interface B3 is connected to the third molecular pump-mechanical pump group, and a third vacuum measuring device G3 is provided on the high-temperature pretreatment chamber 3.

[0043] In some embodiments, a fourth forked sample holder lifting and rotating mechanism La4 is provided at the bottom of the transition chamber 4, and a fourth longitudinal forked sample holder L4 is provided at the top of the fourth forked sample holder lifting and rotating mechanism La4 extending into the transition chamber 4. The fourth longitudinal forked sample holder L4 and the first sample transfer rod A1 are in the same longitudinal plane, a fourth pump group interface B4 is provided on the transition chamber 4, the fourth pump group interface B4 is connected to the fourth molecular pump-mechanical pump group, and a fourth vacuum measuring device G4 is provided on the transition chamber 4.

[0044] In some embodiments, the high temperature pretreatment chamber 3, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, and the p-type material epitaxial chamber 7 can be arranged symmetrically or asymmetrically around the transition chamber 4. Preferably, the high temperature pretreatment chamber 3, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, and the p-type material epitaxial chamber 7 can be arranged orthogonally around the transition chamber 4.

[0045] In some embodiments, the fourth longitudinal forked sample holder lifting and rotating mechanism La4 can rotate 360° in a circumferential direction.

[0046] In some embodiments, a fifth hatch K5 is provided at the entrance of the intrinsic material epitaxial chamber 5, a fifth sample transfer rod A5 extends transversely through the fifth hatch K5 into the intrinsic material epitaxial chamber 5, a fifth transverse forked sample holder Aa5 is provided at the front end of the fifth sample transfer rod A5 located in the intrinsic material epitaxial chamber 5, the fifth sample transfer rod A5 can also extend into the transition chamber 4, the epitaxial region of the intrinsic material epitaxial chamber 5 is a fifth quartz tube reaction chamber H5, a fifth tubular heating furnace I5 is provided on the outer wall of the fifth quartz tube reaction chamber H5, a fifth forked sample holder lifting and rotating mechanism La5 is provided at the bottom of the fifth quartz tube reaction chamber H5, and a fifth forked sample holder lifting and rotating mechanism La5 is provided at the top end of the fifth forked sample holder lifting and rotating mechanism La5 extending into the fifth quartz tube reaction chamber H5. There is a fifth longitudinal forked sample holder L5, which is in the same longitudinal plane as the first sample transfer rod A1; a fifth pump group interface B5 is provided on the intrinsic material epitaxial chamber 5, which is connected to the fifth molecular pump-mechanical pump group and the fifth epitaxial process mechanical pump; the fifth molecular pump-mechanical pump group and the fifth epitaxial process mechanical pump are connected in parallel; a fifth gas pipeline interface Ea5 is provided on the intrinsic material epitaxial chamber 5, which is connected to the fifth epitaxial gas pipeline; a fifth vacuum measuring device G5 is provided on the intrinsic material epitaxial chamber 5; a fifth pressure feedback control device F5 is provided on the intrinsic material epitaxial chamber 5 at a position between the fifth quartz tube reaction chamber H5 and the fifth pump group interface B5.

[0047] In some embodiments, a sixth hatch K6 is provided at the entrance of the n-type material epitaxial chamber 6, a sixth sample transfer rod A6 extends transversely through the sixth hatch K6 into the n-type material epitaxial chamber 6, a sixth transverse forked sample holder Aa6 is provided at the front end of the sixth sample transfer rod A6 located in the n-type material epitaxial chamber 6, the sixth sample transfer rod A6 can also extend into the transition chamber 4, the epitaxial region of the n-type material epitaxial chamber 6 is a sixth quartz tube reaction chamber H6, a sixth tube heating furnace I6 is provided on the outer wall of the sixth quartz tube reaction chamber H6, a sixth forked sample holder lifting and rotating mechanism La6 is provided at the bottom of the sixth quartz tube reaction chamber H6, and a sixth forked sample holder lifting and rotating mechanism La6 is provided at the top end of the sixth forked sample holder lifting and rotating mechanism La6 extending into the sixth quartz tube reaction chamber H6. There is a sixth longitudinal forked sample holder L6, which is in the same longitudinal plane as the first sample transfer rod A1; a sixth pump group interface B6 is provided on the n-type material epitaxial chamber 6; the fifth pump group interface B6 is connected to the sixth molecular pump-mechanical pump group and the sixth epitaxial process mechanical pump; the sixth molecular pump-mechanical pump group and the sixth epitaxial process mechanical pump are connected in parallel; a sixth gas pipeline interface Ea6 is provided on the n-type material epitaxial chamber 6; the sixth gas pipeline interface Ea6 is connected to the sixth epitaxial gas pipeline; a sixth vacuum measuring device G6 is provided on the n-type material epitaxial chamber 6; a sixth pressure feedback control device F6 is provided on the n-type material epitaxial chamber 6 at a position between the sixth quartz tube reaction chamber H6 and the sixth pump group interface B6.

[0048] In some embodiments, a seventh hatch K7 is provided at the entrance of the p-type material epitaxial chamber 7, a seventh sample transfer rod A7 extends transversely through the seventh hatch K7 into the p-type material epitaxial chamber 7, a seventh transverse forked sample holder Aa7 is provided at the front end of the seventh sample transfer rod A7 located in the p-type material epitaxial chamber 7, the seventh sample transfer rod A7 can also extend into the transition chamber 4, the epitaxial region of the p-type material epitaxial chamber 7 is a seventh quartz tube reaction chamber H7, a seventh tube heating furnace I7 is provided on the outer wall of the seventh quartz tube reaction chamber H7, a seventh forked sample holder lifting and rotating mechanism La7 is provided at the bottom of the seventh quartz tube reaction chamber H7, a seventh forked sample holder lifting and rotating mechanism La7 extending into the seventh quartz tube reaction chamber H7 is provided at the top end thereof The seventh longitudinal forked sample holder L7, the seventh longitudinal forked sample holder L7 and the seventh sample transfer rod A7 are located in the same longitudinal plane, the p-type material epitaxial chamber 7 is provided with a seventh pump group interface B7, the seventh pump group interface B7 is connected with the seventh molecular pump-mechanical pump group and the seventh epitaxial process mechanical pump, the seventh molecular pump-mechanical pump group and the seventh epitaxial process mechanical pump are connected in parallel, the p-type material epitaxial chamber 7 is provided with a seventh gas pipeline interface Ea7, the seventh gas pipeline interface Ea7 is connected with the seventh epitaxial gas pipeline, the p-type material epitaxial chamber 7 is provided with a seventh chamber vacuum measuring device G7, and the p-type material epitaxial chamber 7 is provided with a seventh pressure feedback control device F7 at a position between the seventh quartz tube reaction chamber H7 and the seventh pump group interface B7.

[0049] Specifically, a single-piece sample (e.g., a wafer) enters the system from the sample transfer chamber 1, is pushed into the low-temperature pretreatment chamber 2 by the first sample transfer rod A1, undergoes low-temperature pretreatment in the low-temperature pretreatment chamber 2, and is then pushed into the high-temperature pretreatment chamber 3 by the first sample transfer rod A1. After undergoing high-temperature pretreatment in the high-temperature pretreatment chamber 3, the first sample transfer rod A1 pushes the sample into the transition chamber 4, and then, according to the type of material to be epitaxially grown, it is selected to enter the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, or the p-type material epitaxial chamber 7. The fourth longitudinal forked sample holder lifting and rotating mechanism La4 in the transition chamber 4 drives the fourth longitudinal forked sample holder L4 and the sample to rotate into a direction corresponding to the selected chamber and then enter the corresponding chamber. After completing the epitaxial processing, if no other materials are to be epitaxially grown subsequently, the sample is directly pulled out of the chamber by the sample transfer rod equipped on the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, or the p-type material epitaxial chamber 7. If another material needs to be epitaxially grown subsequently, the sample needs to enter the transition chamber 4 again, and then enter the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, or the p-type material epitaxial chamber 7 according to the type of material to be epitaxially grown. The fourth longitudinal forked sample holder L4 and the sample are driven by the fourth longitudinal forked sample holder lifting and rotating mechanism La4 in the transition chamber 4 to rotate to the direction corresponding to the selected chamber and then enter the corresponding chamber, and subsequent operations are similar.

[0050] It should be noted that in the system of the embodiment of the present invention, the sample can be freely transferred between different chambers through the interaction of the sample transfer rod and the transverse forked sample holder provided at the front end of the sample transfer rod, the longitudinal forked sample holder located in the target chamber, and the lifting and rotating mechanism of the longitudinal forked sample holder. Specifically, the front end of the sample transfer rods of the sample transfer chamber 1, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, and the p-type material epitaxial chamber 7 are each provided with a transverse forked sample holder, while the low-temperature pretreatment chamber 2, the high-temperature pretreatment chamber 3, the transition chamber 4, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, and the p-type material epitaxial chamber 7 are all provided with a longitudinal forked sample holder and a lifting and rotating mechanism of the longitudinal forked sample holder. Taking the transportation of a single-chip sample from the high-temperature pretreatment chamber 3 to the p-type material epitaxial chamber 7 as an example, the working principle of the longitudinal forked sample holder and the lifting and rotating mechanism of the longitudinal forked sample holder is explained: Figure 6 As shown, Figure 6 a shows that the first sample transfer rod A1 transfers the single-piece sample placed on the first transverse forked sample holder Aa1 to the transition chamber 4; Figure 6 b shows that the fourth longitudinal forked sample holder lifting and rotating mechanism La4 controls the fourth longitudinal forked sample holder L4 to lift the sample, and the sample is separated from the first transverse forked sample holder Aa1; Figure 6 c shows that the first sample transfer rod A1 drives the first transverse forked sample holder Aa1 to move out of the transition chamber 4, and the fourth longitudinal forked sample holder lifting and rotating mechanism La4 controls the fourth longitudinal forked sample holder L4 to rotate 90° clockwise, so that the sample positioning edge faces the direction of the n-type material epitaxial chamber 6; Figure 6 d shows that the seventh sample transfer rod A7 drives the seventh transverse forked sample holder Aa7 to extend into the transition chamber 4 and is located below the sample; Figure 6 e shows that the fourth longitudinal forked sample holder lifting and rotating mechanism La4 controls the fourth longitudinal forked sample holder L4 to descend until the sample is completely placed on the seventh transverse forked sample holder Aa7 at the front end of the seventh sample transfer rod A7; Figure 6 f shows that the seventh sample transfer rod A7 moves the sample placed on the seventh transverse forked sample holder Aa7 into the p-type material epitaxial chamber 7 .

[0051] In the system of the embodiment of the present invention, the sample transfer chamber 1, the low temperature pretreatment chamber 2 and the high temperature pretreatment chamber 3 share the first sample transfer rod A1; the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 each have their own sample transfer rod, which are the fifth sample transfer rod A5, the sixth sample transfer rod A6 and the seventh sample transfer rod A7. Each sample transfer rod can extend into the transition chamber 4. In some embodiments, the sample transfer rod can be a vacuum magnetic suction type sample transfer rod.

[0052] In the system of the embodiment of the present invention, a heating disk J3 is provided in the high-temperature pretreatment chamber 3, and heating furnaces are provided on the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7, which are the fifth heating furnace I5, the sixth heating furnace I6 and the seventh heating furnace I7 respectively. These four chambers can complete temperature control independently.

[0053] In the system of the embodiment of the present invention, each chamber is provided with a pump group interface, which can be connected to a molecular pump-mechanical pump group and can be used to maintain the vacuum degree. In the system of the embodiment of the present invention, each chamber is provided with a vacuum measuring device (such as a vacuum gauge), which can display the vacuum level of each chamber in real time. In the system of the embodiment of the present invention, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 are provided with a pressure feedback control device (such as a butterfly valve) and a mechanical pump for the epitaxial process connected to the pump group interface, so as to facilitate the chamber pressure control during epitaxial growth.

[0054] The sample transfer chamber 1 is provided with a first gas pipeline interface Ec1, which is connected to the purge gas pipeline and necessary accessories equipped by the system, and can achieve the purpose of removing impurities on the sample surface by purging. The low-temperature pretreatment chamber 2 is provided with a second gas pipeline interface Eb2, which is connected to the cleaning gas pipeline and necessary accessories equipped by the system, and can further clean the sample surface by chemical methods. The intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 are all provided with gas pipeline interfaces, namely the fifth gas pipeline interface Ea5, the sixth gas pipeline interface Ea6 and the seventh gas pipeline interface Ea7, which are respectively connected to the epitaxial gas pipelines and necessary accessories required to meet the epitaxial purpose of each chamber.

[0055] It is understandable that, if necessary, the system of the embodiment of the present invention can also increase the number of epitaxial chambers to meet specific epitaxial requirements.

[0056] Alternatively, if Figure 7-9 As shown, the following is a system in multi-chip mode.

[0057] In some embodiments, a first hatch K1 is provided at the entrance of the sample transfer chamber 1, a first sample transfer rod A1 extends into the sample transfer chamber 1 transversely through the first hatch K1, a first rotating escapement hook Ab1 is provided at the front end of the first sample transfer rod A1 located in the sample transfer chamber 1, the first sample transfer rod A1 can also extend into the low-temperature pretreatment chamber 2, the high-temperature pretreatment chamber 3 and the transition chamber 4, a first quartz boat track P1 extending toward the transition chamber 4 is transversely provided at the bottom of the sample transfer chamber 1, the top of the first quartz boat track P1 is slidably connected to the bottom of the quartz boat M, a first pump group interface B1 is provided on the sample transfer chamber 1, the first pump group interface B1 is connected to the first molecular pump-mechanical pump group, a first gas pipeline interface Ec1 is provided on the sample transfer chamber 1, the first gas pipeline interface Ec1 is connected to the purge gas pipeline, and a first chamber vacuum measuring device G1 is provided on the sample transfer chamber 1.

[0058] In some embodiments, a second quartz boat track P2 extending toward the transition chamber 4 is transversely arranged at the bottom of the low-temperature pretreatment chamber 2, and the second quartz boat track P2 is on the same straight line as the first quartz boat track P1. A second pump group interface B2 is arranged on the low-temperature pretreatment chamber 2, and the second pump group interface B2 is connected to the second molecular pump-mechanical pump group. A second pressure feedback control device F2 is arranged on the second pump group interface B2. A second gas pipeline interface Eb2 is arranged on the low-temperature pretreatment chamber 2, and the second gas pipeline interface Eb2 is connected to the cleaning gas pipeline. A second chamber vacuum measuring device G2 is arranged on the low-temperature pretreatment chamber 2. It should be understood that the second pressure feedback control device F2 belongs to the front-stage equipment of the second molecular pump-mechanical pump group, is mainly responsible for the pressure regulation in the low-temperature pretreatment chamber 2, and is part of the gas path structure.

[0059] In some embodiments, the epitaxial region in the high-temperature pretreatment chamber 3 is a third quartz tube reaction chamber H3, a third tube heating furnace I3 is arranged on the outer wall of the third quartz tube reaction chamber H3, a third quartz boat track P3 extending toward the transition chamber 4 is arranged laterally at the bottom of the high-temperature pretreatment chamber 3, the third quartz boat track P3 is in a straight line with the first quartz boat track P1, a third pump group interface B3 is arranged on the high-temperature pretreatment chamber 3, the third pump group interface B3 is connected to the third molecular pump-mechanical pump group, and a third chamber vacuum measuring device G3 is arranged on the high-temperature pretreatment chamber 3.

[0060] In some embodiments, a track-type sample holder rotating mechanism Na and a track-type sample holder N fixed to the top of the track-type sample holder rotating mechanism Na are longitudinally arranged at the bottom of the transition chamber 4, a fourth pump group interface B4 is arranged on the transition chamber 4, the fourth pump group interface B4 is connected to the fourth molecular pump-mechanical pump group, and a fourth chamber vacuum measuring device G4 is arranged on the transition chamber 4.

[0061] In some embodiments, the high temperature pretreatment chamber 3, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, and the p-type material epitaxial chamber 7 can be arranged symmetrically or asymmetrically around the transition chamber 4. Preferably, the high temperature pretreatment chamber 3, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, and the p-type material epitaxial chamber 7 can be arranged orthogonally around the transition chamber 4.

[0062] In some embodiments, the track-type sample holder rotating mechanism Na can rotate 360° in the circumferential direction. No matter where the high temperature pretreatment chamber 3, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, and the p-type material epitaxial chamber 7 are arranged in the transition chamber 4, the sample can be conveniently transferred.

[0063] In some embodiments, the track-type sample holder rotating mechanism (Na) can be raised and lowered. This arrangement facilitates the transfer of the quartz boat M between the transition chamber 4 and the high-temperature pretreatment chamber 3, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, and the p-type material epitaxial chamber 7.

[0064] In some embodiments, a fifth hatch K5 is provided at the entrance of the intrinsic material epitaxial chamber 5, a fifth sample transfer rod A5 extends into the intrinsic material epitaxial chamber 5 transversely through the fifth hatch K5, a fifth rotary escapement hook Ab5 is provided at the front end of the fifth sample transfer rod A5 located in the intrinsic material epitaxial chamber 5, the fifth sample transfer rod A5 can also extend into the transition chamber 4, the epitaxial region of the intrinsic material epitaxial chamber 5 is a fifth quartz tube reaction chamber H5, a fifth tubular heating furnace I5 is provided on the outer wall of the fifth quartz tube reaction chamber H5, and a fifth quartz boat track P extending toward the transition chamber 4 is transversely provided at the bottom of the intrinsic material epitaxial chamber 5 5. The intrinsic material epitaxial chamber 5 is provided with a fifth pump group interface B5, which is connected to the fifth molecular pump-mechanical pump group and the fifth mechanical pump for epitaxial process, and the fifth molecular pump-mechanical pump group and the fifth mechanical pump for epitaxial process are connected in parallel. The intrinsic material epitaxial chamber 5 is provided with a fifth gas pipeline interface Ea5, which is connected to the fifth epitaxial gas pipeline. The intrinsic material epitaxial chamber 5 is provided with a fifth chamber vacuum measuring device G5. The intrinsic material epitaxial chamber 5 is provided with a fifth pressure feedback control device F5 at a position between the fifth quartz tube reaction chamber H5 and the fifth pump group interface B5.

[0065] In some embodiments, the fifth quartz boat track P5 is in a straight line with the first quartz boat track P1 , which facilitates the transfer of samples between the transition chamber 4 and the intrinsic material epitaxy chamber 5 .

[0066] In some embodiments, a sixth hatch K6 is provided at the entrance of the n-type material epitaxial chamber 6, a sixth sample transfer rod A6 extends transversely through the sixth hatch K6 into the n-type material epitaxial chamber 6, a sixth rotary escapement hook Ab6 is provided at the front end of the sixth sample transfer rod A6 located in the n-type material epitaxial chamber 6, the sixth sample transfer rod A6 can also extend into the transition chamber 4, the epitaxial region of the n-type material epitaxial chamber 6 is a sixth quartz tube reaction chamber H6, a sixth tube heating furnace I6 is provided on the outer wall of the sixth quartz tube reaction chamber H6, and a sixth quartz boat track P extending toward the transition chamber 4 is transversely provided at the bottom of the n-type material epitaxial chamber 6. 6. A sixth pump group interface B6 is provided on the n-type material epitaxial chamber 6, and the sixth pump group interface B6 is connected to the sixth molecular pump-mechanical pump group and the sixth mechanical pump for epitaxial process, and the sixth molecular pump-mechanical pump group and the sixth mechanical pump for epitaxial process are connected in parallel. A sixth gas pipeline interface Ea6 is provided on the n-type material epitaxial chamber 6, and the sixth gas pipeline interface Ea6 is connected to the sixth epitaxial gas pipeline. A sixth chamber vacuum measuring device G6 is provided on the n-type material epitaxial chamber 6, and a sixth pressure feedback control device F6 is provided on the n-type material epitaxial chamber 6 at a position between the sixth quartz tube reaction chamber H6 and the sixth pump group interface B6.

[0067] In some embodiments, the entrance of the p-type material epitaxial chamber 7 is provided with a seventh hatch K7, the seventh sample transfer rod A7 horizontally passes through the seventh hatch K7 and extends into the p-type material epitaxial chamber 7, the front end of the seventh sample transfer rod A7 located in the p-type material epitaxial chamber 7 is provided with a seventh rotating escapement hook Ab7, the seventh sample transfer rod A7 can also extend into the transition chamber 4, the epitaxial region of the p-type material epitaxial chamber 7 is the seventh quartz tube reaction chamber H7, the outer wall of the seventh quartz tube reaction chamber H7 is provided with a seventh tubular heating furnace I7, and the bottom of the p-type material epitaxial chamber 7 is horizontally provided with a seventh quartz boat track P extending toward the transition chamber 4. 7. The p-type material epitaxial chamber 7 is provided with a seventh pump group interface B7, which is connected to the seventh molecular pump-mechanical pump group and the seventh mechanical pump for epitaxial process, and the seventh molecular pump-mechanical pump group and the seventh mechanical pump for epitaxial process are connected in parallel. The p-type material epitaxial chamber 7 is provided with a seventh gas pipeline interface Ea7, which is connected to the seventh epitaxial gas pipeline. The p-type material epitaxial chamber 7 is provided with a seventh chamber vacuum measuring device G7. The p-type material epitaxial chamber 7 is provided with a seventh pressure feedback control device F7 at a position between the seventh quartz tube reaction chamber H7 and the seventh pump group interface B7.

[0068] In some embodiments, the sixth quartz boat track P6 is perpendicular to the first quartz boat track P1 , so that it is convenient for the sample to be transferred between the transition chamber 4 and the n-type material epitaxial chamber 6 .

[0069] In some embodiments, the seventh quartz boat track P7 is perpendicular to the first quartz boat track P1 , so that it is convenient for the sample to be transferred between the transition chamber 4 and the p-type material epitaxial chamber 7 .

[0070] In some embodiments, the sixth quartz boat track P6 and the seventh quartz boat track P7 are in a straight line, which is convenient for transferring samples between the transition chamber 4 , the n-type material epitaxial chamber 6 , and the p-type material epitaxial chamber 7 .

[0071] Specifically, a quartz boat M containing multiple samples enters the system from the sample transfer chamber 1, and is pushed into the low-temperature pretreatment chamber 2 by the first sample transfer rod A1. After low-temperature pretreatment is performed in the low-temperature pretreatment chamber 2, the boat is pushed into the high-temperature pretreatment chamber 3 by the first sample transfer rod A1. After high-temperature pretreatment is performed in the high-temperature pretreatment chamber 3, the boat is pushed into the transition chamber 4 by the first sample transfer rod A1. Then, the boat enters the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, or the p-type material epitaxial chamber 7 according to the type of material to be epitaxially grown. The track-type sample holder rotating mechanism Na provided in the transition chamber 4 drives the track-type sample holder N and the sample at the top thereof to rotate into the direction corresponding to the selected chamber and then enter the corresponding chamber. After completing the epitaxial processing, if no other materials are to be epitaxially grown subsequently, the quartz boat M is directly pulled out of the chamber by the sample transfer rod equipped on the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, or the p-type material epitaxial chamber 7. If another material needs to be epitaxially grown subsequently, the quartz boat M needs to enter the transition chamber 4 again, and then enter the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6, or the p-type material epitaxial chamber 7 according to the type of material to be epitaxially grown. The track-type sample holder rotating mechanism Na set in the transition chamber 4 drives the track-type sample holder N and the quartz boat M on the top to rotate to the direction corresponding to the selected chamber and then enter the corresponding chamber, and the subsequent operations are similar.

[0072] It should be noted that in the system of the embodiment of the present invention, the sample can be freely transferred between different chambers through the sample transfer rod and the rotating escapement hook set at the front end of the sample transfer rod, the quartz boat M loaded with multiple samples, the track-type sample holder rotating mechanism Na located in the transition chamber 4 and the track-type sample holder N located thereon, and the quartz boat track located in other chambers. Specifically, the front end of the sample transfer rod of each of the sample transfer chamber 1, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 is provided with a rotating escapement hook, and the low-temperature pretreatment chamber 2, the high-temperature pretreatment chamber 3, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 are all provided with a track for transporting the quartz boat M, and the transition chamber 4 is provided with a track-type sample holder rotating mechanism Na and a track-type sample holder N. Taking the example of transporting the quartz boat M from the high temperature pretreatment chamber 3 to the p-type material epitaxial chamber 7, the working principle of the track sample holder N and the track sample holder rotating mechanism Na in the system in the multi-wafer mode is explained: Fig. 9 As shown, Fig. 9 Each component and Figure 8 The orientation of each component is consistent, among which, Fig. 9 a shows the quartz boat M, the first sample transfer rod A1 and the first quartz boat track P1; Fig. 9 b shows that the first sample transfer rod A1 sends the quartz boat M to the transition chamber 4; Fig. 9 c shows that the first sample transfer rod A1 moves out of the transition chamber 4; Fig. 9 d shows that the track-type sample holder lifting and rotating mechanism Na controls the track-type sample holder N to rotate 90° clockwise, so that the quartz boat M faces the direction of the n-type material epitaxial chamber 6; Fig. 9 e shows that the seventh sample transfer rod A7 extends into the transition chamber 4 to fix the quartz boat M; Fig. 9 f shows that the seventh sample transfer rod A7 moves the quartz boat M into the p-type material epitaxial chamber 7 .

[0073] In the system of the embodiment of the present invention, the sample transfer chamber 1, the low temperature pretreatment chamber 2 and the high temperature pretreatment chamber 3 share the first sample transfer rod A1; the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 each have their own sample transfer rod, which are the fifth sample transfer rod A5, the sixth sample transfer rod A6 and the seventh sample transfer rod A7. Each sample transfer rod can extend into the transition chamber 4. In some embodiments, the sample transfer rod can be a vacuum magnetic suction type sample transfer rod.

[0074] In the system of the embodiment of the present invention, the high temperature pretreatment chamber 3, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 are all provided with heating furnaces, namely the third heating furnace I3, the fifth heating furnace I5, the sixth heating furnace I6 and the seventh heating furnace I7. These four chambers can independently complete temperature control.

[0075] In the system of the embodiment of the present invention, each chamber is provided with a pump group interface, which can be connected to a molecular pump-mechanical pump group and can be used to maintain the vacuum degree. In the system of the embodiment of the present invention, each chamber is provided with a vacuum measuring device (such as a vacuum gauge), which can display the vacuum level of each chamber in real time. In the system of the embodiment of the present invention, the intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 are provided with a pressure feedback control device (such as a butterfly valve) and a mechanical pump for the epitaxial process connected to the pump group interface, so as to facilitate the chamber pressure control during epitaxial growth.

[0076] The sample transfer chamber 1 is provided with a first gas pipeline interface Ec1, which is connected to the purge gas pipeline and necessary accessories equipped by the system, and can achieve the purpose of removing impurities on the sample surface by purging. The low-temperature pretreatment chamber 2 is provided with a second gas pipeline interface Eb2, which is connected to the cleaning gas pipeline and necessary accessories equipped by the system, and can further clean the sample surface by chemical methods. The intrinsic material epitaxial chamber 5, the n-type material epitaxial chamber 6 and the p-type material epitaxial chamber 7 are all provided with gas pipeline interfaces, namely the fifth gas pipeline interface Ea5, the sixth gas pipeline interface Ea6 and the seventh gas pipeline interface Ea7, which are respectively connected to the epitaxial gas pipelines and necessary accessories required to meet the epitaxial purpose of each chamber.

[0077] It is understandable that, if necessary, the system of the embodiment of the present invention can also increase the number of epitaxial chambers to meet specific epitaxial requirements.

[0078] The present invention is described in detail below with reference to the embodiments and the accompanying drawings.

[0079] Example 1

[0080] (1) Growing a Ge pin structure on a Si wafer

[0081] 1.1 A Si wafer of suitable size cleaned by an industrial standard wet cleaning process (RCA) is soaked in a diluted hydrofluoric acid (HF) aqueous solution for 1 minute and then taken out and blown dry.

[0082] 1.2 Place the Si wafer on the first transverse bifurcated sample holder Aa1 in the sample transfer chamber 1 and close the first hatch K1.

[0083] 1.3 The sample transfer chamber 1 is evacuated using the first molecular pump-mechanical pump unit connected to the first pump unit interface B1.

[0084] 1.4 Ensure that the low temperature pretreatment chamber 2 is in a vacuum state and the second longitudinal forked sample holder L2 is in a low position. Open the first gate valve O1-2, and the first sample transfer rod A1 drives the first transverse forked sample holder L1 to send the Si wafer into the low temperature pretreatment chamber 2, so that the Si wafer is located directly above the second longitudinal forked sample holder L2.

[0085] 1.5 Use the second longitudinal forked sample holder lifting and rotating mechanism La2 to lift the second longitudinal forked sample holder L2, lift the Si wafer away from the first transverse forked sample holder Aa1, and use the first sample transfer rod A1 to drive the first transverse forked sample holder Aa1 out of the low-temperature pretreatment chamber 2, then lower the second longitudinal forked sample holder L2 to the low-temperature cleaning position, and close the first gate valve O1-2.

[0086] 1.6 A low-temperature cleaning gas (such as HF) is introduced into the low-temperature pretreatment chamber 2 through the second gas pipeline interface Eb2 at a preset flow rate and pressure. After a period of time, the ventilation is stopped and the low-temperature pretreatment chamber 2 is evacuated using the second molecular pump-mechanical pump group connected to the second pump group interface B2.

[0087] 1.7 Raise the second longitudinal forked sample holder L2, open the first gate valve O1-2, and use the first sample transfer rod A1 to drive the first transverse forked sample holder Aa1 into the low-temperature pretreatment chamber 2 to ensure that the first transverse forked sample holder Aa1 is exactly located below the Si wafer; use the second longitudinal forked sample holder lifting and rotating mechanism La2 to lower the second longitudinal forked sample holder L2 to transfer the Si wafer to the first transverse forked sample holder Aa1.

[0088] 1.8 Ensure that the high-temperature pretreatment chamber 3 is in a vacuum state and the third longitudinal forked sample holder L3 is in a low position; open the second gate valve O2-3, and the first sample transfer rod A1 drives the first transverse forked sample holder Aa1 to send the Si wafer into the high-temperature pretreatment chamber 3, so that the Si wafer is located directly above the third longitudinal forked sample holder L3.

[0089] 1.9 Use the third longitudinal forked sample holder lifting and rotating mechanism La3 to lift the third longitudinal forked sample holder L3, lift the Si wafer away from the first transverse forked sample holder Aa1, use the first sample transfer rod A1 to drive the first transverse forked sample holder Aa1 out of the high-temperature pretreatment chamber 3, then lower the third longitudinal forked sample holder L3 to the high-temperature pretreatment position, and close the second gate valve O2-3.

[0090] 1.10 Control the heating plate position control mechanism Ja3, lower the heating plate J3 to the vicinity of the Si wafer, and perform high-temperature pretreatment on the Si wafer by heating the heating plate J3.

[0091] 1.11 When the temperature of the Si wafer drops below 300°C, control the heating plate position control mechanism Ja3 to raise the heating plate J3, lift the third longitudinal forked sample holder L3, open the second gate valve O2-3, and use the first sample transfer rod A1 to send the first transverse forked sample holder Aa1 into the high-temperature pretreatment chamber 3 to ensure that the first transverse forked sample holder Aa1 is located just below the Si wafer; lower the third longitudinal forked sample holder L3 to transfer the Si wafer to the first transverse forked sample holder Aa1.

[0092] 1.12 Ensure that the transition chamber 4 is in a vacuum state, the fourth longitudinal forked sample holder L4 is in a low position, open the third gate valve O3-4, and the first sample transfer rod A1 drives the first transverse forked sample holder Aa1 to send the Si wafer into the transition chamber 4, so that the Si is located directly above the fourth longitudinal forked sample holder L4.

[0093] 1.13 Use the fourth longitudinal forked sample holder lifting and rotating mechanism La4 to lift the fourth longitudinal forked sample holder L4, lift the Si wafer away from the first transverse forked sample holder Aa1, use the first sample transfer rod A1 to drive the first transverse forked sample holder Aa1 out of the transition chamber 4, and close the third gate valve O3-4.

[0094] 1.14 Ensure that the chamber 7 is in a vacuum state, open the seventh gate valve O4-7, use the seventh sample transfer rod A7 to drive the seventh transverse forked sample holder Aa7 to extend into the transition chamber 4, and ensure that the seventh transverse forked sample holder Aa7 is exactly under the Si wafer (if necessary, the fourth longitudinal forked sample holder L4 can be rotated 90° clockwise to avoid collision between the legs of the fourth longitudinal forked sample holder L4 and the seventh transverse forked sample holder Aa7); lower the fourth longitudinal forked sample holder L4 to transfer the Si wafer to the seventh transverse forked sample holder Aa7.

[0095] 1.15 Use the seventh sample transfer rod A7 to drive the seventh transverse forked sample holder Aa7 to withdraw the p-type material epitaxial chamber 7, and close the seventh gate valve O4-7.

[0096] 1.16 Perform a p-type Ge epitaxial process in the p-type material epitaxial chamber 7, including raising the temperature of the seventh heating furnace I7 to a preset value, introducing an epitaxial process gas with a specific composition ratio through the seventh gas pipeline interface Ea7, and controlling the chamber reaction pressure through the seventh epitaxial process mechanical pump connected to the seventh pump group interface B7, the seventh pressure feedback control device F7, and the seventh vacuum measuring device G7, for a preset period of time.

[0097] 1.17 Stop the introduction of epitaxial gas through the seventh gas pipeline interface Ea7, and evacuate the p-type material epitaxial chamber 7 through the seventh epitaxial process mechanical pump connected to the seventh pump group interface B7, the seventh pressure feedback control device F7, the seventh vacuum measuring device G7, and the seventh molecular pump-mechanical pump group connected to the seventh pump group interface B7;

[0098] 1.18 When the temperature of the p-type material epitaxial chamber 7 drops below 300°C, ensure that the fourth longitudinal forked sample holder L4 is in a low position, open the seventh gate valve O4-7, and use the seventh sample transfer rod A7 to drive the seventh transverse forked sample holder Aa7 to send the Si wafer on the seventh transverse forked sample holder Aa7 into the transition chamber 4, so that the Si wafer is located directly above the fourth longitudinal forked sample holder L4.

[0099] 1.19 The fourth longitudinal forked sample holder lifting and rotating mechanism La4 is used to lift the fourth longitudinal forked sample holder L4, and the Si wafer is lifted off the seventh transverse forked sample holder Aa7, and the seventh sample transfer rod A7 is used to drive the seventh transverse forked sample holder Aa7 out of the transition chamber 4, and the seventh gate valve O4-7 is closed. At this point, the first step of the epitaxy of p-type Ge on Si has been completed.

[0100] 1.20 The second step of i-type Ge epitaxy is performed using the intrinsic material epitaxy chamber 5 and its accessories in a similar manner to steps 1.14-1.19. After completion, the sample is returned to the fourth longitudinal forked sample holder L4 in the transition chamber 4.

[0101] 1.21 The third step of n-type Ge epitaxy is performed using the n-type material epitaxy chamber 6 and its accessories in a similar manner to steps 1.14-1.19. After completion, the sample is returned to the fourth longitudinal forked sample holder L4 in the n-type material epitaxy chamber 4.

[0102] 1.22 Ensure that the sample transfer chamber 1, the low temperature pretreatment chamber 2, and the high temperature pretreatment chamber 3 are all in a vacuum state, and the second longitudinal forked sample holder L2 and the third longitudinal forked sample holder L3 are both in a low position. Open the first gate valve O1-2, the second gate valve O2-3, and the third gate valve O3-4, and use the first sample transfer rod A1 to drive the first transverse forked sample holder Aa1 to extend into the transition chamber 4, ensuring that the first transverse forked sample holder Aa1 is directly below the Si wafer.

[0103] 1.23 Use the fourth longitudinal forked sample holder lifting and rotating mechanism La4 to lower the fourth longitudinal forked sample holder L4, transfer the Si wafer to the first transverse forked sample holder Aa1, use the first sample transfer rod A1 to drive the first transverse forked sample holder Aa1 and the sample to withdraw to the sample transfer chamber 1, and close the third gate valve O3-4, the second gate valve O2-3, and the first gate valve O1-2.

[0104] 1.24 Ventilate the sample transfer chamber 1 through the purge gas pipeline connected to the first gas pipeline interface Ec1, and when the pressure reaches atmospheric pressure, open the first cabin door K1 and take out the sample.

[0105] In the present invention, the terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" etc. mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the described specific features, structures, materials or characteristics may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0106] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. An ultra-high vacuum chemical vapor deposition system, characterized in that: include: A sample transfer chamber (1), a low temperature pretreatment chamber (2), a high temperature pretreatment chamber (3), a transition chamber (4), an intrinsic material epitaxial chamber (5), an n-type material epitaxial chamber (6) and a p-type material epitaxial chamber (7); the outlet of the sample transfer chamber (1) is connected to the inlet of the low temperature pretreatment chamber (2) via a first gate valve (O1-2); the outlet of the low temperature pretreatment chamber (2) is connected to the inlet of the high temperature pretreatment chamber (3) via a second gate valve (O2-3); the outlet of the high temperature pretreatment chamber (3) is connected to the inlet of the The first inlet of the transition chamber (4) is connected via a third gate valve (O3-4); the outlet of the intrinsic material epitaxial chamber (5) is connected to the second inlet of the transition chamber (4) via a fifth gate valve (O4-5); the outlet of the n-type material epitaxial chamber (6) is connected to the third inlet of the transition chamber (4) via a sixth gate valve (O4-6); the outlet of the p-type material epitaxial chamber (7) is connected to the fourth inlet of the transition chamber (4) via a seventh gate valve (O4-7); and samples can be transferred between different chambers.

2. The system according to claim 1, characterized in that The entrance of the sample transfer chamber (1) is provided with a first hatch (K1), a first sample transfer rod (A1) extends into the sample transfer chamber (1) through the first hatch (K1) transversely, a first transverse bifurcated sample holder (Aa1) is provided at the front end of the first sample transfer rod (A1) located in the sample transfer chamber (1), the first sample transfer rod (A1) can also extend into the low temperature pretreatment chamber (2), the high temperature pretreatment chamber (3) and the transition chamber (4), a first pump group interface (B1) is provided on the sample transfer chamber (1), the first pump group interface (B1) is connected to a first molecular pump-mechanical pump group, a first gas pipeline interface (Ec1) is provided on the sample transfer chamber (1), the first gas pipeline interface (Ec1) is connected to a purge gas pipeline, and a first vacuum measuring device (G1) is provided on the sample transfer chamber (1).

3. The system according to claim 2, characterized in that A second longitudinal forked sample holder lifting and rotating mechanism (La2) is arranged at the bottom of the low-temperature pretreatment chamber (2); a second longitudinal forked sample holder (L2) is arranged at the top of the second longitudinal forked sample holder lifting and rotating mechanism (La2) extending into the low-temperature pretreatment chamber (2); the second longitudinal forked sample holder (L2) and the first sample transfer rod (A1) are located in the same longitudinal plane; a second pump group interface (B2) is arranged on the low-temperature pretreatment chamber (2); the second pump group interface (B2) is connected to a second molecular pump-mechanical pump group; a second pressure feedback control device (F2) is arranged on the second pump group interface (B2); a second gas pipeline interface (Eb2) is arranged on the low-temperature pretreatment chamber (2); the second gas pipeline interface (Eb2) is connected to a cleaning gas pipeline; and a second vacuum measuring device (G2) is arranged on the low-temperature pretreatment chamber (2).

4. The system according to claim 2, characterized in that A heating disk (J3) and a heating disk position control mechanism (Ja3) are arranged in the high-temperature pretreatment chamber (3); a third longitudinal forked sample holder lifting and rotating mechanism (La3) is arranged at the bottom of the high-temperature pretreatment chamber (3); a third longitudinal forked sample holder (L3) is arranged at the top of the third longitudinal forked sample holder lifting and rotating mechanism (La3) extending into the high-temperature pretreatment chamber (3); the third longitudinal forked sample holder (L3) is located below the heating disk (J3); the third longitudinal forked sample holder (L3) and the first sample transfer rod (A1) are in the same longitudinal plane; a third pump group interface (B3) is arranged on the high-temperature pretreatment chamber (3); the third pump group interface (B3) is connected to a third molecular pump-mechanical pump group; and a third vacuum measuring device (G3) is arranged on the high-temperature pretreatment chamber (3).

5. The system according to claim 2, characterized in that A fourth longitudinal forked sample holder lifting and rotating mechanism (La4) is arranged at the bottom of the transition chamber (4); a fourth longitudinal forked sample holder (L4) is arranged at the top end of the fourth longitudinal forked sample holder lifting and rotating mechanism (La4) extending into the transition chamber (4); the fourth longitudinal forked sample holder (L4) and the first sample transfer rod (A1) are located in the same longitudinal plane; a fourth pump group interface (B4) is arranged on the transition chamber (4); the fourth pump group interface (B4) is connected to a fourth molecular pump-mechanical pump group; and a fourth vacuum measuring device (G4) is arranged on the transition chamber (4).

6. The system according to claim 2, characterized in that The entrance of the intrinsic material epitaxial chamber (5) is provided with a fifth hatch (K5), a fifth sample transfer rod (A5) passes through the fifth hatch (K5) transversely and extends into the intrinsic material epitaxial chamber (5), a fifth transverse forked sample holder (Aa5) is provided at the front end of the fifth sample transfer rod (A5) located in the intrinsic material epitaxial chamber (5), and the fifth sample transfer rod (A5) can also extend into the transition chamber (4), the epitaxial region of the intrinsic material epitaxial chamber (5) is a fifth quartz tube reaction chamber (H5), a fifth tube heating furnace (I5) is provided on the outer wall of the fifth quartz tube reaction chamber (H5), a fifth longitudinal forked sample holder lifting and rotating mechanism (La5) is provided at the bottom of the fifth quartz tube reaction chamber (H5), and the fifth longitudinal forked sample holder lifting and rotating mechanism (La5) extends into the fifth quartz tube A fifth longitudinal forked sample holder (L5) is arranged at the top of the reaction chamber (H5), the fifth longitudinal forked sample holder (L5) and the first sample transfer rod (A1) are located in the same longitudinal plane, a fifth pump group interface (B5) is arranged on the intrinsic material epitaxial chamber (5), the fifth pump group interface (B5) is connected to a fifth molecular pump-mechanical pump group and a fifth mechanical pump for epitaxial process, a fifth gas pipeline interface (Ea5) is arranged on the intrinsic material epitaxial chamber (5), the fifth gas pipeline interface (Ea5) is connected to a fifth epitaxial gas pipeline, a fifth vacuum measuring device (G5) is arranged on the intrinsic material epitaxial chamber (5), and a fifth pressure feedback control device (F5) is arranged on the intrinsic material epitaxial chamber (5) at a position between the fifth quartz tube reaction chamber (H5) and the fifth pump group interface (B5).

7. The system according to claim 2, characterized in that The entrance of the n-type material epitaxial chamber (6) is provided with a sixth hatch (K6), a sixth sample transfer rod (A6) passes through the sixth hatch (K6) transversely and extends into the n-type material epitaxial chamber (6), a sixth transverse forked sample holder (Aa6) is provided at the front end of the sixth sample transfer rod (A6) located in the n-type material epitaxial chamber (6), and the sixth sample transfer rod (A6) can also extend into the transition chamber (4), the epitaxial region of the n-type material epitaxial chamber (6) is a sixth quartz tube reaction chamber (H6), a sixth tube heating furnace (I6) is provided on the outer wall of the sixth quartz tube reaction chamber (H6), a sixth longitudinal forked sample holder lifting and rotating mechanism (La6) is provided at the bottom of the sixth quartz tube reaction chamber (H6), and the sixth longitudinal forked sample holder lifting and rotating mechanism (La6) extends into the sixth quartz tube A sixth longitudinal forked sample holder (L6) is arranged at the top of the n-type reaction chamber (H6), the sixth longitudinal forked sample holder (L6) and the first sample transfer rod (A1) are located in the same longitudinal plane, a sixth pump group interface (B6) is arranged on the n-type material epitaxial chamber (6), the fifth pump group interface (B6) is connected to a sixth molecular pump-mechanical pump group and a sixth mechanical pump for epitaxial process, a sixth gas pipeline interface (Ea6) is arranged on the n-type material epitaxial chamber (6), the sixth gas pipeline interface (Ea6) is connected to a sixth epitaxial gas pipeline, a sixth vacuum measuring device (G6) is arranged on the n-type material epitaxial chamber (6), and a sixth pressure feedback control device (F6) is arranged on the n-type material epitaxial chamber (6) at a position between the sixth quartz tube reaction chamber (H6) and the sixth pump group interface (B6).

8. The system according to claim 2, characterized in that The entrance of the p-type material epitaxial chamber (7) is provided with a seventh hatch (K7), a seventh sample transfer rod (A7) passes through the seventh hatch (K7) transversely and extends into the p-type material epitaxial chamber (7), a seventh transverse forked sample holder (Aa7) is provided at the front end of the seventh sample transfer rod (A7) located in the p-type material epitaxial chamber (7), and the seventh sample transfer rod (A7) can also extend into the transition chamber (4), the epitaxial region of the p-type material epitaxial chamber (7) is a seventh quartz tube reaction chamber (H7), a seventh tube heating furnace (I7) is provided on the outer wall of the seventh quartz tube reaction chamber (H7), a seventh longitudinal forked sample holder lifting and rotating mechanism (La7) is provided at the bottom of the seventh quartz tube reaction chamber (H7), and the seventh longitudinal forked sample holder lifting and rotating mechanism (La7) extends into the seventh quartz tube reaction chamber (H7). A seventh longitudinal forked sample holder (L7) is arranged at the top of the tubular reaction chamber (H7), the seventh longitudinal forked sample holder (L7) and the seventh sample transfer rod (A7) are located in the same longitudinal plane, a seventh pump group interface (B7) is arranged on the p-type material epitaxial chamber (7), the seventh pump group interface (B7) is connected to a seventh molecular pump-mechanical pump group and a seventh mechanical pump for epitaxial process, a seventh gas pipeline interface (Ea7) is arranged on the p-type material epitaxial chamber (7), the seventh gas pipeline interface (Ea7) is connected to a seventh epitaxial gas pipeline, a seventh vacuum measuring device (G7) is arranged on the p-type material epitaxial chamber (7), and a seventh pressure feedback control device (F7) is arranged on the p-type material epitaxial chamber (7) at a position between the seventh quartz tubular reaction chamber (H7) and the seventh pump group interface (B7).

9. The system according to claim 1, characterized in that The entrance of the sample transfer chamber (1) is provided with a first hatch (K1), a first sample transfer rod (A1) extends transversely through the first hatch (K1) into the sample transfer chamber (1), a first rotating escapement hook (Ab1) is provided at the front end of the first sample transfer rod (A1) located in the sample transfer chamber (1), the first sample transfer rod (A1) can also extend into the low-temperature pretreatment chamber (2), the high-temperature pretreatment chamber (3) and the transition chamber (4), and a first sample transfer rod (A1) is transversely provided at the bottom of the sample transfer chamber (1) to extend toward the transition chamber (4) a first quartz boat track (P1) extending in the direction of the quartz boat (M), the top of the first quartz boat track (P1) being slidably connected to the bottom of the quartz boat (M), the sample transfer chamber (1) being provided with a first pump group interface (B1), the first pump group interface (B1) being connected to a first molecular pump-mechanical pump group, the sample transfer chamber (1) being provided with a first gas pipeline interface (Ec1), the first gas pipeline interface (Ec1) being connected to a purge gas pipeline, and the sample transfer chamber (1) being provided with a first vacuum measuring device (G1) being connected.

10. The system according to claim 9, characterized in that A second quartz boat track (P2) extending toward the transition chamber (4) is transversely arranged at the bottom of the low-temperature pretreatment chamber (2); the second quartz boat track (P2) and the first quartz boat track (P1) are located on the same straight line; a second pump group interface (B2) is arranged on the low-temperature pretreatment chamber (2); the second pump group interface (B2) is connected to a second molecular pump-mechanical pump group; a second pressure feedback control device (F2) is arranged on the second pump group interface (B2); a second gas pipeline interface (Eb2) is arranged on the low-temperature pretreatment chamber (2); the second gas pipeline interface (Eb2) is connected to a cleaning gas pipeline; and a second vacuum measuring device (G2) is arranged on the low-temperature pretreatment chamber (2).

11. The system according to claim 9, characterized in that The epitaxial region in the high-temperature pretreatment chamber (3) is a third quartz tube reaction chamber (H3); a third tube heating furnace (I3) is arranged on the outer wall of the third quartz tube reaction chamber (H3); a third quartz boat track (P3) extending toward the transition chamber (4) is arranged transversely at the bottom of the high-temperature pretreatment chamber (3); the third quartz boat track (P3) and the first quartz boat track (P1) are in a straight line; a third pump group interface (B3) is arranged on the high-temperature pretreatment chamber (3); the third pump group interface (B3) is connected to a third molecular pump-mechanical pump group; and a third vacuum measuring device (G3) is arranged on the high-temperature pretreatment chamber (3).

12. The system according to claim 9, characterized in that A track-type sample holder rotating mechanism (Na) and a track-type sample holder (N) fixed to the top of the track-type sample holder rotating mechanism (Na) are longitudinally arranged at the bottom of the transition chamber (4); a fourth pump group interface (B4) is arranged on the transition chamber (4); the fourth pump group interface (B4) is connected to a fourth molecular pump-mechanical pump group; and a fourth vacuum measuring device (G4) is arranged on the transition chamber (4).

13. The system according to claim 9, characterized in that The entrance of the intrinsic material epitaxial chamber (5) is provided with a fifth hatch (K5), a fifth sample transfer rod (A5) extends transversely through the fifth hatch (K5) into the intrinsic material epitaxial chamber (5), a fifth rotating escapement hook (Ab5) is provided at the front end of the fifth sample transfer rod (A5) located in the intrinsic material epitaxial chamber (5), and the fifth sample transfer rod (A5) can also extend into the transition chamber (4), the epitaxial region of the intrinsic material epitaxial chamber (5) is a fifth quartz tube reaction chamber (H5), a fifth tubular heating furnace (I5) is provided on the outer wall of the fifth quartz tube reaction chamber (H5), and a fifth tubular heating furnace (I5) is transversely provided at the bottom of the intrinsic material epitaxial chamber (5) extending toward the transition chamber (4) A fifth quartz boat track (P5); a fifth pump group interface (B5) is provided on the intrinsic material epitaxial chamber (5); the fifth pump group interface (B5) is connected to the fifth molecular pump-mechanical pump group and the fifth mechanical pump for epitaxial process; a fifth gas pipeline interface (Ea5) is provided on the intrinsic material epitaxial chamber (5) near the fifth cabin door (5); the fifth gas pipeline interface (Ea5) is connected to the fifth epitaxial gas pipeline; a fifth vacuum measuring device (G5) is provided on the intrinsic material epitaxial chamber (5); a fifth pressure feedback control device (F5) is provided on the intrinsic material epitaxial chamber (5) at a position between the fifth quartz tube reaction chamber (H5) and the fifth pump group interface (B5).

14. The system according to claim 9, characterized in that The entrance of the n-type material epitaxial chamber (6) is provided with a sixth hatch (K6), a sixth sample transfer rod (A6) extends transversely through the sixth hatch (K6) into the n-type material epitaxial chamber (6), a sixth rotating escapement hook (Ab6) is provided at the front end of the sixth sample transfer rod (A6) located in the n-type material epitaxial chamber (6), and the sixth sample transfer rod (A6) can also extend into the transition chamber (4), the epitaxial region of the n-type material epitaxial chamber (6) is a sixth quartz tube reaction chamber (H6), a sixth tube heating furnace (I6) is provided on the outer wall of the sixth quartz tube reaction chamber (H6), and a sixth tube heating furnace (I6) is transversely provided at the bottom of the n-type material epitaxial chamber (6) extending toward the transition chamber (4) A sixth quartz boat track (P6); a sixth pump group interface (B6) is provided on the n-type material epitaxial chamber (6); the sixth pump group interface (B6) is connected to a sixth molecular pump-mechanical pump group and a sixth mechanical pump for epitaxial process; a sixth gas pipeline interface (Ea6) is provided on the n-type material epitaxial chamber (6) near the sixth hatch (6); the sixth gas pipeline interface (Ea6) is connected to a sixth epitaxial gas pipeline; a sixth vacuum measuring device (G6) is provided on the n-type material epitaxial chamber (6); a sixth pressure feedback control device (F6) is provided on the n-type material epitaxial chamber (6) at a position between the sixth quartz tube reaction chamber (H6) and the fifth pump group interface (B5).

15. The system according to claim 9, characterized in that The entrance of the p-type material epitaxial chamber (7) is provided with a seventh hatch (K7), a seventh sample transfer rod (A7) extends transversely through the seventh hatch (K7) into the p-type material epitaxial chamber (7), a seventh rotating escapement hook (Ab7) is provided at the front end of the seventh sample transfer rod (A7) located in the p-type material epitaxial chamber (7), the seventh sample transfer rod (A7) can also extend into the transition chamber (4), the epitaxial region of the p-type material epitaxial chamber (7) is a seventh quartz tube reaction chamber (H7), a seventh tube heating furnace (I7) is provided on the outer wall of the seventh quartz tube reaction chamber (H7), and a seventh tube heating furnace (I7) is transversely provided at the bottom of the p-type material epitaxial chamber (7) extending in the direction of the transition chamber (4) A seventh quartz boat track (P7), a seventh pump group interface (B7) is arranged on the p-type material epitaxial chamber (7), the seventh pump group interface (B7) is connected to the seventh molecular pump-mechanical pump group and the seventh mechanical pump for epitaxial process, a seventh gas pipeline interface (Ea7) is arranged on the p-type material epitaxial chamber (7) near the seventh hatch (7), the seventh gas pipeline interface (Ea7) is connected to the seventh epitaxial gas pipeline, a seventh vacuum measuring device (G7) is arranged on the p-type material epitaxial chamber (7), and a seventh pressure feedback control device (F7) is arranged on the p-type material epitaxial chamber (7) between the seventh quartz tube reaction chamber (H7) and the seventh pump group interface (B7).

16. The system according to claim 1, characterized in that The high-temperature pretreatment chamber (3), the intrinsic material epitaxial chamber (5), the n-type material epitaxial chamber (6) and the p-type material epitaxial chamber (7) are arranged in an orthogonal manner around the transition chamber (4).

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