Non-contact Electropolishing System and Electropolishing Method for Superconducting Baseband

Abstract

The present invention provides a non-contact electrolytic polishing system and an electrolytic polishing method for a superconducting baseband, which relates to the technical field of surface treatment of superconducting basebands. The system includes a feeding device, a winding device, and a non-contact electrolytic polishing device. The non-contact electrolytic polishing device is arranged between the feeding device and the winding device. The feeding device unwinds the strip, and the strip passes through the non-contact electrolytic polishing device for electrolytic polishing. After electrolytic polishing, the strip is wound by the winding device. By isolating the anode and the cathode to form an anode region and a cathode region, under the action of an electric field and an electrolyte, electrolytic polishing is achieved in the cathode region, and slight electroplating is achieved in the anode region. The baseband enters at the baseband inlet and exits at the baseband outlet, realizing dynamic continuous non-contact electrolytic polishing. The continuous partition bypass current non-contact electrolytic polishing has high efficiency and greatly avoids the influence of edge effects, and has good thickness uniformity.

Description

Technical Field

[0001] The present invention relates to the technical field of surface treatment of superconducting basebands, and specifically, to a non-contact electrolytic polishing system and an electrolytic polishing method for superconducting basebands. Background Art

[0002] The second-generation high-temperature superconducting tapes epitaxially grow superconducting thin films on thin metal basebands. Considering the industrial application requirements of superconducting tapes and the requirements of the preparation environment, the baseband must have excellent crystal structure, surface chemical stability, coefficient of thermal expansion matching, high-temperature resistance, and antioxidant ability. After repeated experiments and research, scientists found that nickel alloy basebands with a (102) orientation, and considering various factors, Hastelloy (C276) tapes were developed as the metal substrate.

[0003] Due to the limitations of the Hastelloy baseband rolling process itself, the surface is rough and there are contaminants, which cannot meet the manufacturing process of the second-generation high-temperature superconducting tapes. The importance of electrolytic polishing for the second-generation high-temperature superconducting tapes includes: improving the surface quality of the baseband, removing surface contaminants, and improving the overall roughness of the superconducting tapes; using this method, the surface roughness of the tapes can be reduced to below 0.6 nm, improving the crystallization quality and uniformity of the superconducting layer; enhancing mechanical properties, the baseband after electrolytic polishing has better mechanical properties, can better support the superconducting layer, provide stable mechanical support, and thus enhance the overall mechanical properties of the tapes.

[0004] The recent mass production of the second-generation high-temperature superconducting tapes has promoted more and more applications in superconducting systems, and the demand for superconducting tapes of different thicknesses is also increasing. The conventional required thickness is 50 um. Along with the demand for thin superconductors in the compact fusion and high-field magnet industries, the electrolytic polishing of 30 um to 40 um thin basebands is particularly critical, as it is necessary to control the surface roughness and solve other uncontrollable factors, such as problems like deformation and curling caused by tension.

[0005] Traditional contact electrolytic polishing is prone to problems such as arcing, scratching, and contamination. Developing a non-contact electrolytic polishing method can effectively avoid the above problems, is more conducive to improving the quality of superconducting tapes, and promotes the industrialization process of superconducting tapes. Summary of the Invention

[0006] Aiming at the defects in the prior art, the purpose of the present invention is to provide a non-contact electrolytic polishing system and an electrolytic polishing method for superconducting basebands.

[0007] A non-contact electrolytic polishing system for a superconducting baseband according to the present invention includes a feeding device, a winding device, and a non-contact electrolytic polishing device. The non-contact electrolytic polishing device is arranged between the feeding device and the winding device. The feeding device unwinds a strip, and the strip passes through the non-contact electrolytic polishing device for electrolytic polishing. After electrolytic polishing, the strip is wound by the winding device.

[0008] Preferably, the electrolytic polishing device includes an electrolyte circulation tank, parallel cathodes, and parallel anodes.

[0009] The parallel anodes form an anode area in the electrolyte circulation tank, and the parallel cathodes form a cathode area in the electrolyte circulation tank. The cathode area and the anode area are alternately arranged in the electrolyte circulation tank, and the strip passes through the alternately arranged areas of the anode area and the cathode area in sequence.

[0010] Preferably, the parallel anodes include a first mounting strip and anode plates. The first mounting strip is erected above the electrolyte circulation tank along the length direction of the electrolyte circulation tank, and a plurality of anode plates are arranged at intervals along the length direction of the first mounting strip through fasteners.

[0011] The parallel cathodes include a second mounting strip and cathode plates. The second mounting strip is erected above the electrolyte circulation tank along the length direction of the electrolyte circulation tank, and a plurality of cathode plates are arranged at intervals along the length direction of the second mounting strip through fasteners.

[0012] The materials of the anode plates include titanium, platinum, graphite, and pure lead, and the materials of the cathode plates include stainless steel, lead, and graphite.

[0013] The area ratio of the cathode plates to the anode plates is 1.5:1 to 3:1.

[0014] Preferably, the non-strip-facing surface of the anode plate is encapsulated with corrosion-resistant insulating polyethylene with an inner liner, and the strip-facing surface is encapsulated with a perforated polytetrafluoroethylene plate.

[0015] A bypass current partition is further arranged in the electrolyte circulation tank, and one bypass current partition is arranged at each end of the alternately arranged area of the anode area and the cathode area.

[0016] A hole through which the strip can pass is formed on any one of the bypass current partitions.

[0017] The material of the bypass current partition is polytetrafluoroethylene.

[0018] Preferably, the electrolytic polishing device uses different current densities to achieve rough polishing and then fine polishing of the strip.

[0019] Preferably, it further includes a first ultrasonic cleaning tank, a first spray cleaning tank, a first pure water spray tank, a second spray cleaning tank, a second ultrasonic cleaning tank, a second pure water spray tank, a third ultrasonic cleaning tank, a third pure water spray tank, a drying oven, and a dust removal and material collection table, and the material collection device is arranged in the dust removal and material collection table;

[0020] Before electrolytic polishing, the strip is first cleaned successively through the first ultrasonic cleaning tank, the first spray cleaning tank, and the first pure water spray tank. After electrolytic polishing, the strip is then cleaned successively through the second spray cleaning tank, the second ultrasonic cleaning tank, the second pure water spray tank, the third ultrasonic cleaning tank, and the third pure water spray tank, and then enters the drying oven for drying, and finally enters the dust removal and material collection table for winding.

[0021] Preferably, it further includes a dust removal and material collection table and a drying oven. The dust removal and material collection table is isolated from the external environment through an isolation cover, and the drying oven is communicated with the isolation cover through a quartz tube;

[0022] The drying oven includes a drying area and a drying maintenance area. The strip first passes through the drying area and then through the drying maintenance area, and then enters the isolation cover through the quartz tube and is wound by the material collection device;

[0023] The drying temperature of the drying oven is 350°C to 400°C.

[0024] Preferably, a pinhole air knife is arranged between any two adjacent working tanks to blow the residual liquid on the surface of the strip.

[0025] Preferably, multiple groups of the strips are arranged at intervals in the height direction, and any group of the strips is wound and unwound by the corresponding unwinding device and winding device.

[0026] According to a non-contact electrolytic polishing method for superconducting basebands provided by the present invention, the electrolytic polishing method includes the following steps:

[0027] Step S1, pre-cleaning treatment of the strip;

[0028] Step S2, electrolytic polishing of the strip;

[0029] Step S3, post-cleaning treatment of the strip;

[0030] Step S4, drying treatment of the strip;

[0031] Step S5, winding of the strip.

[0032] Compared with the prior art, the present invention has the following beneficial effects:

[0033] 1. The present invention isolates the anode and the cathode to form an anode area and a cathode area. Under the action of the electric field and the electrolyte, the cathode area is electropolished, and the anode area produces hydrogen precipitation. Since a large amount of hydrogen is precipitated near the surface, it is difficult to form metal deposition, or trace amounts of metal ion deposition may occur. The base tape enters at the base tape inlet and exits at the base tape outlet, thereby realizing dynamic continuous non-contact electropolishing. The continuous partitioned bypass current non-contact electropolishing has high efficiency, greatly avoids the influence of edge effects, and has good thickness uniformity.

[0034] 2. Due to the extremely high requirements on the roughness of the base strip after electro-polishing, compared with traditional electro-polishing, there is no friction, it is not easy to spark, or produce scratches on the surface of the strip.

[0035] 3. The present invention optimizes the type of anode material, so that the anode has a long service life and does not need to be replaced frequently, which helps to improve the working efficiency of the system.

[0036] 4. The present invention connects the drying box and the internal space of the isolation cover through a quartz tube. On the one hand, the strip enters the isolation cover from the inside of the quartz tube for winding without contacting the external environment. On the other hand, the temperature in the drying box can be transferred to the isolation cover through the quartz tube, so that the internal space of the isolation cover remains dry, avoiding water vapor from adhering to the surface of the strip during winding, which helps to improve the quality of subsequent strip processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings:

[0038] Figure 1 This is a schematic diagram of the overall structure of the electrolytic polishing device mainly embodied in the present invention;

[0039] Figure 2 This is a schematic diagram of the overall structure of the electrolyte circulation tank mainly embodied in the present invention;

[0040] Figure 3 This is a schematic diagram of the connection structure between the drying box and the dust removal and material receiving platform, which is mainly embodied in the present invention;

[0041] Figure 4 This is a schematic diagram of the wind knife blowing structure mainly embodied in the present invention.

[0042] As shown in the figure:

[0043] DETAILED DESCRIPTION

[0044] The present invention will be described in detail below in conjunction with specific embodiments. The following embodiments will help those skilled in the art to further understand the present invention, but do not limit the present invention in any form. It should be noted that for those of ordinary skill in the art, several changes and improvements can be made without departing from the concept of the present invention. These all belong to the protection scope of the present invention.

[0045] It should be noted that the strip in this application is the baseband.

[0046] Example 1

[0047] As Figures 1 to 4 shown, a non-contact electrolytic polishing system for a superconducting baseband according to the present invention includes a feeding device, a winding device, and a non-contact electrolytic polishing device 160. The non-contact electrolytic polishing device 160 is arranged between the feeding device and the winding device. The feeding device unwinds the strip 100, and the strip 100 passes through the non-contact electrolytic polishing device 160 for electrolytic polishing. After electrolytic polishing, the strip 100 is wound by the winding device.

[0048] Specifically, the strip 100 runs with a certain tension provided by the feeding device and the winding device. The feeding device is arranged on the feeding table 110, and the winding device is arranged on the dust-removing winding table 250. Both the feeding device and the winding device include a stepping motor, a magnetic powder coupler, and a tension controller, which provide a stable tension for the strip 100 and unwind it. It should be noted that the technical solution of this application is particularly applicable to the electrolytic polishing of Hastelloy basebands, and can also be used for the electrolytic polishing of other strips 100.

[0049] The technical solution of the present application provides an electrolytic polishing device 160 that can achieve non-contact electrolytic polishing. The electrolytic polishing device 160 includes an electrolyte circulation tank 163, a parallel cathode 164, and a parallel anode 165. The parallel anode 165 forms an anode region in the electrolyte circulation tank 163, and the parallel cathode 164 forms a cathode region in the electrolyte circulation tank 163. The cathode region and the anode region are alternately arranged in the electrolyte circulation tank 163, and the strip passes through the alternately arranged regions of the anode region and the cathode region in sequence. Specifically, in a feasible implementation manner: at least one group of parallel anodes 165 is respectively arranged on both sides of the electrolyte circulation tank 163. The parallel anodes 165 on both sides of the electrolyte circulation tank 163 are arranged oppositely to form an anode region, and a gap allowing the strip 100 to pass through is formed in the middle of the anode region. At least one group of parallel cathodes 164 is respectively arranged on both sides of the electrolyte circulation tank 163. The parallel cathodes 164 on both sides of the electrolyte circulation tank 163 are arranged oppositely to form a cathode region, and a gap allowing the strip 100 to pass through is formed in the middle of the cathode region. The cathode region and the anode region are alternately arranged in the electrolyte circulation tank 163. A bypass current partition 162 is further arranged in the electrolyte circulation tank 163. One bypass current partition 162 is respectively arranged at both ends of the alternately arranged region of the anode region and the cathode region. Further, a bypass current partition 162 is arranged between any adjacent cathode region and anode region. A hole allowing the strip 100 to pass through is formed on the bypass current partition 162, and the hole is a base strip passing hole. The strip 100 passes through the alternately arranged regions of the anode region and the cathode region in sequence. The strip 100 is electrolytically polished in the cathode region, and the strip 100 is electroplated in the anode region. Specifically, hydrogen is evolved in the anode region. Since a large amount of hydrogen is evolved near the surface, it is difficult to form metal deposition, or there may be a trace amount of metal ion deposition. And the electroplating rate of the strip 100 in the anode region is less than the electrolytic polishing rate of the strip 100 in the cathode region.

[0050] The technical solution of this application adopts the structural form of an electrolyte circulation tank 163 in combination with a bypass current separator 162, multiple parallel cathodes 164, and multiple parallel anodes 165 to achieve non-contact electrolytic polishing and prevent the phenomenon of curling of the strip 100 during the processing. In a feasible implementation: the parallel anode 165 includes ten anodes arranged at equal intervals, and the parallel cathode 164 includes ten cathodes arranged at equal intervals. The ten groups of anodes are connected to the anode of the high-frequency DC rectifier 170 through the same electrode rod, and the ten groups of cathodes are connected to the cathode of the high-frequency DC rectifier 170 through the same electrode rod. The area ratio of the cathode plate to the anode plate is 1.5:1 to 3:1. Preferably, the area ratio of the cathode plate to the anode plate is 2:1 to 2.5:1. The electrode structure is combined with the bypass current separator 162 to form an anode area and a cathode area in the electrolytic cell. The strip 100 enters the interior of the electrolyte circulation tank 163 from the baseband inlet 161 on the side wall of the electrolyte circulation tank 163, and the strip 100 leaves the electrolyte circulation tank 163 from the baseband outlet 166 on the side wall of the electrolyte circulation tank 163. Under the action of the electric field and the electrolyte inside the electrolyte circulation tank 163, electrolytic polishing is achieved in the cathode area, and slight electroplating is achieved in the anode area. The strip 100 passes through the alternating areas of the ten groups of anode areas and cathode areas in sequence. The entire process is non-contact between the baseband and the device, realizing dynamic non-contact electrolytic polishing. The bypass current separator 162 is provided with a baseband running hole, and the strip 100 passes through the center position of the running hole. The aperture opening is 3-7 mm, which is suitable for non-contact electrolytic polishing of basebands with a thickness of 25-60 μm. It can effectively reduce the edge effect in electrolytic polishing, has good thickness uniformity, and can achieve continuous electrolytic polishing of more than 100 km of electrolyte in one batch. The roughness of the upper and lower passes is basically the same and less than 0.6 nm.

[0051] More specifically, the parallel anode 165 includes a first installation strip and anode plates. The first installation strip is installed above the electrolyte circulation tank 163 along the length direction of the electrolyte circulation tank 163, and multiple anode plates are arranged at intervals along the length direction of the first installation strip through fasteners. The parallel cathode 164 includes a second installation strip and cathode plates. The second installation strip is installed above the electrolyte circulation tank 163 along the length direction of the electrolyte circulation tank 163, and multiple cathode plates are arranged at intervals along the length direction of the second installation strip through fasteners, realizing the installation of the parallel anode 165 and the parallel cathode 164 on the electrolyte circulation tank 163.

[0052] The electrolyte in the electrolyte circulation tank 163 can be configured according to actual needs. The technical solution of this application provides an environment-friendly electrolyte suitable for electrolytic polishing of Hastelloy, and its components are: 98% concentrated sulfuric acid 15-25%; ≥85% concentrated phosphoric acid 70-85%; glycerol 1.5-3.5%; citric acid 1-2.5%. The new electrolyte needs to be stirred for 2-3 h and activated for more than 0.5 h. The optimal polishing temperature of the electrolyte is 50-60 °C.

[0053] In a preferred embodiment: The material of the anode plate includes: titanium, platinum, graphite or lead. Preferably, the material of the anode plate is pure lead. The material of the cathode plate includes stainless steel, lead or graphite. Preferably, the material of the cathode plate is stainless steel. The non-strip 100-facing surface of the anode plate is encapsulated with corrosion-resistant insulating polyethylene with an inner liner, and the strip 100-facing surface is encapsulated with a perforated polytetrafluoroethylene plate. The material of the bypass current separator 162 is polytetrafluoroethylene. The service life of the anode plate is increased, and there is no need to frequently replace the anode plate.

[0054] In another preferred embodiment, at least two sets of electrolytic polishing devices 160 are provided. The two sets of electrolytic polishing devices 160 use different current densities to achieve rough polishing and then fine polishing of the strip 100. The electrolytic polishing current is 130 - 170 A. Preferably, the rough polishing of the electrolytic polishing tank of the present invention is 100 - 140 A, and the fine polishing of the electrolytic polishing tank is preferably 140 - 170 A. The polishing speed is 1.5 - 3 m / min. Preferably, the present invention is 2 m / min.

[0055] The non-contact electrolytic polishing system for superconducting basebands of the present application further includes a first ultrasonic cleaning tank 130, a first spray cleaning tank 140, a first pure water spray tank 150, a second spray cleaning tank 180, a second ultrasonic cleaning tank 190, a second pure water spray tank 200, a third ultrasonic cleaning tank 210, a third pure water spray tank 230, a drying oven 240 and a dust removal and material collection table 250. The material collection device is arranged in the dust removal and material collection table 250. The strip 100 is first cleaned successively through the first ultrasonic cleaning tank 130, the first spray cleaning tank 140, and the first pure water spray tank 150 before electrolytic polishing. After electrolytic polishing, the strip 100 is successively cleaned through the second spray cleaning tank 180, the second ultrasonic cleaning tank 190, the second pure water spray tank 200, the third ultrasonic cleaning tank 210, and the third pure water spray tank 230 and then enters the drying oven 240 for drying, and finally enters the dust removal and material collection table 250 for winding.

[0056] Specifically, the pure water in the first ultrasonic cleaning liquid storage tank 270 is pumped into the first ultrasonic cleaning tank 130 by a vertical lifting pump, and the ultrasonic power supply 120 controls the ultrasonic vibrating plate to perform dirt removal and cleaning; the pure water in the first spray cleaning liquid storage tank 280 is pumped into the first spray cleaning tank 140 by a vertical lifting pump to remove the residual liquid of ultrasonic cleaning on the strip 100. The first pure water spray tank 150 is supplied with deionized water at a pressure of 0.3 MPa to remove the residual liquid of spray cleaning on the strip 100. The electrolyte in the electrolyte liquid storage tank 290 is pumped into the electrolyte circulation tank 163 by a vertical lifting pump to perform electrolytic polishing for baseband activation treatment and electrolytic polishing for baseband functionality. The pure water in the second spray cleaning liquid storage tank 300 is pumped into the second spray cleaning tank 180 by a vertical lifting pump to remove the residual baseband electrolyte. The pure water in the second ultrasonic cleaning liquid storage tank 310 is pumped into the second ultrasonic cleaning tank 190 by a vertical lifting pump, and the ultrasonic power supply 120 controls the ultrasonic vibrating plate to remove the residual baseband electrolyte. The second pure water spray tank 200 is supplied with deionized water at a pressure of 0.3 MPa to remove the residual baseband electrolyte. The pure water in the third ultrasonic cleaning liquid storage tank 320 is pumped into the third ultrasonic cleaning tank 210 by a vertical lifting pump, and the ultrasonic power supply 120 controls the ultrasonic vibrating plate to remove the residual baseband impurities. The third pure water spray tank 230 is supplied with deionized water at a pressure of 0.3 MPa for baseband purification treatment. The drying oven 240 dries and removes the residual moisture and organic substances. The spray water in the third pure water spray tank 230, the second pure water spray tank 200, and the first pure water spray tank 150 all comes from the pure water replenishing tank 330.

[0057] In a preferred embodiment: An air knife is provided between any two adjacent working tanks to blow the residual liquid on the surface of the strip 100. The blowing angle of the air knife is preferably 45 degrees to blow the residual liquid on the baseband surface and prevent the cross-flow of each liquid.

[0058] In a feasible implementation: The dust removal and material collection table 250 is isolated from the external environment by an isolation cover 252, and the drying box 240 is communicated with the isolation cover 252 through a quartz tube 242. The drying box 240 includes a drying area and a drying maintenance area. The strip 100 first passes through the drying area and then through the drying maintenance area, and then enters the isolation cover 252 through the quartz tube 242 and is wound by the material collection device. The drying temperature of the drying box 240 is 350°C to 400°C. Specifically, by using the quartz tube 242 for connection and the baseband passing through the quartz tube 242, the heat of the drying box 240 can be brought into the isolation cover 252 of the dust removal and material collection table 250, ensuring a relatively dry material collection environment. The FFU 251 device allows clean air to enter the isolation cover 252 of the dust removal and material collection table 250 and the quartz tube 242 from top to bottom, ensuring the relative cleanliness of the surface of the baseband. The drying temperature is preferably 400°C. It should be noted that the technical solution of the present application connecting the drying box 240 and the dust removal and material collection table 250 can prevent the dried strip 100 from contacting the external environment. Moisture in the external environment will adhere to the surface of the strip 100 and cannot be directly observed by the naked eye. If too much moisture adheres to the strip 100, the strip 100 is likely to have a film exposure problem and form low points during subsequent processing. Therefore, the present application uses the drying box 240 to be set as a drying area and a drying maintenance area to ensure the drying effect on the strip 100, combined with the dry internal environment of the isolation cover 252, ensuring that excessive moisture does not adhere to the surface of the wound strip 100, which is helpful for the subsequent processing of the strip 100. It should be noted that in actual production, the technical solution of the present application is compared with drying the strip, with no visible moisture on the surface of the strip, and then winding the dried strip in a dust-proof room. It is found that the film exposure problem of the technical solution of the present application is much smaller than the solution of winding in a dust-proof room.

[0059] In a preferred implementation: Multiple groups of strips 100 are arranged at intervals in the height direction, and any group of strips 100 is wound and unwound by a corresponding unwinding device and winding device. The material collection of the dust removal and material collection table 250 includes 2 sets of stepping motors, 2 sets of magnetic powder clutches, 2 sets of tension sensors, 2 sets of tension controllers, and 1 set of transmission devices, which provide stable tension-free dust collection for the upper and lower strips 100 respectively. The surface defects of the baseband are identified through the online detection system 260. The pure water replenishing tank quantitatively replenishes the above storage tank through an adjustable replenishing device.

[0060] A non-contact electrolytic polishing method for a superconducting baseband provided by the present invention, the electrolytic polishing method comprising the following steps: Step S1, pre-cleaning treatment of the strip 100; Step S2, electrolytic polishing of the strip 100; Step S3, post-cleaning treatment of the strip 100; Step S4, drying treatment of the strip 100; Step S5, winding of the strip 100. Specifically, an environmentally friendly electrolyte suitable for electrolytic polishing of Hastelloy is prepared, and the components are: 98% concentrated sulfuric acid 15-25%; ≥85% concentrated phosphoric acid 70-85%; glycerol 1.5-3.5%; citric acid 1-2.5%. The new electrolyte needs to be stirred for 2-3 h and activated for more than 0.5 h. The optimum polishing temperature of the electrolyte is 50-60 °C. For electrolytic polishing, the current is 130-170 A and the voltage is 13.0-16.0 V. The polishing speed is 1.5-3 m / min, and 2 m / min is preferably used in the present invention.

[0061] Example 2

[0062] Based on Example 1, a non-contact electrolytic polishing system for a superconducting baseband provided by the present invention, taking the electrolytic polishing of a 30-μm-thick Hastelloy baseband as an example:

[0063] The main differences are the electrolyte ratio, the aperture opening of the bypass current partition plate 162, the setting of the tension, the current, and the polishing speed.

[0064] Electrolyte formula: 98% concentrated sulfuric acid 15-18%; ≥85% concentrated phosphoric acid 70-80%; glycerol 1.5-3.5%; citric acid 1-2.5%. The new electrolyte needs to be stirred for 2-3 h and activated for more than 0.5 h. The optimum polishing temperature of the electrolyte is 55 °C.

[0065] The baseband uses 2 strips with a thickness of 30 μm, a width of 10 mm, and a length of 1500 m. The electrolytic polishing process is adopted: the speed is 2.0 m / min, the current of the first electrolytic polishing device 160 is 100-130 A, and the current of the second electrolytic polishing device 160 is 140-160 A. The feeding tension is set at 20 N, and the winding tension is set at 18 N.

[0066] The bypass current partition plate 162 is provided with upper and lower baseband running holes, and the baseband passes through the center position of the running holes, and the aperture opening is 4-6 mm.

[0067] Specific implementation method: Prepare 2 basebands with a thickness of 30 μm, a width of 10 mm, and a length of 1500 m. Feed them counterclockwise from the feeding table 110 in two upper and lower channels simultaneously, and successively enter the first ultrasonic cleaning tank 130 for dirt removal and cleaning, enter the first spray cleaning tank 140 to remove the residual liquid in the first ultrasonic cleaning tank 130, enter the first pure water spray tank 150 to spray the residual liquid in the first spray cleaning tank 140, enter the first electrolytic polishing device 160 for activation treatment by electrolytic polishing, enter the second electrolytic polishing device 160 for functional electrolytic polishing, enter the second spray cleaning tank 180 to remove the residual electrolyte, enter the second ultrasonic cleaning tank 190 to remove the residual electrolyte, enter the second pure water spray tank 200 to remove the residual electrolyte, enter the third ultrasonic cleaning tank 210 to remove the residual impurities, enter the third pure water spray tank 230 for cleaning treatment, enter the drying oven 240 to dry the residual moisture and organic substances, and enter the dust collection and material receiving table 250 to receive the materials. After electrolytic polishing of the upper and lower channel basebands, test AFM@1um, and the Rq values at both ends are less than 0.5 nm. After electrolytic polishing of the upper and lower channel basebands, the thickness is 25 ± 1 μm.

[0068] Example 3

[0069] Based on Example 1, a non-contact electrolytic polishing system for superconducting basebands provided by the present invention takes the electrolytic polishing of a Hastelloy baseband with a thickness of 50 μm as an example: The method is the same as that in Example 2, and the main differences are the electrolyte ratio, the aperture opening of the bypass current partition plate 162, the setting of the tension, the current, and the polishing speed.

[0070] Electrolyte formula: 98% concentrated sulfuric acid 20 - 25%; concentrated phosphoric acid ≥85% 70 - 85%; glycerol 1.5 - 3.5%; citric acid 1 - 2.5%. The new electrolyte needs to be stirred for 2 - 3 h and undergo activation treatment for more than 0.5 h. The optimal polishing temperature of the electrolyte is 55°C. The baseband uses 2 with a thickness of 50 μm, a width of 12 mm, and a length of 1500 m. The electrolytic polishing process is adopted: the speed is 2.0 m / min, the current of the first electrolytic polishing device 160 is 140 A, and the current of the second electrolytic polishing device 160 is 150 A. The feeding tension is set at 25 N, and the receiving tension is set at 23 N. The bypass current partition plate 162 is provided with upper and lower baseband running holes, and the baseband passes through the center position of the running holes, and the aperture opening is 5 - 7 mm.

[0071] Specific implementation method: Prepare 2 base tapes with a thickness of 50 μm, a width of 12 mm, and a length of 1500 m. The two base tapes are fed counterclockwise from the feeding table 110 in two upper and lower paths simultaneously, and successively enter the first ultrasonic cleaning tank 130 for dirt removal and cleaning, enter the first spray cleaning tank 140 to remove the residual liquid in the first ultrasonic cleaning tank 130, enter the first pure water spray tank 150 to spray the residual liquid in the first spray cleaning tank 140, enter the first electrolytic polishing device 160 for activation treatment by electrolytic polishing, enter the second electrolytic polishing device 160 for functional electrolytic polishing, enter the second spray cleaning tank 180 to remove the residual electrolyte, enter the second ultrasonic cleaning tank 190 to remove the residual electrolyte, enter the second pure water spray tank 200 to remove the residual electrolyte, enter the third ultrasonic cleaning tank 210 to remove the residual impurities, enter the third pure water spray tank 230 for cleaning, enter the drying oven 240 to dry the residual moisture and organic substances, and enter the dust collection and material receiving table 250 for material receiving. After electrolytic polishing of the upper and lower base tapes, AFM is measured at 1 μm, and the Rq values at both the head and the tail are less than 0.5 nm. After electrolytic polishing of the upper and lower base tapes, the thickness is 44 ± 1 μm.

[0072] In the description of the present application, it should be understood that the orientation or positional relationship indicated by the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings. It is only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, so it should not be construed as a limitation to the present application.

[0073] The specific embodiments of the present invention have been described above. It should be understood that the present invention is not limited to the above specific implementation manners. Those skilled in the art can make various changes or modifications within the scope of the claims, which do not affect the essence of the present invention. Without conflict, the embodiments of the present application and the features in the embodiments can be arbitrarily combined with each other.

Claims

1. A non-contact electrolytic polishing system for a superconducting baseband, characterized in that, It includes a feeding device, a winding device, and a non-contact electrolytic polishing device. The non-contact electrolytic polishing device is arranged between the feeding device and the winding device. The feeding device unwinds the strip, and the strip passes through the non-contact electrolytic polishing device for electrolytic polishing. After electrolytic polishing, the strip is wound by the winding device. The electrolytic polishing device includes an electrolyte circulation tank, parallel cathodes, and parallel anodes. The parallel anodes form an anode area in the electrolyte circulation tank, and the parallel cathodes form a cathode area in the electrolyte circulation tank. The cathode area and the anode area are alternately arranged in the electrolyte circulation tank, and the strip sequentially passes through the areas where the anode area and the cathode area alternate. A bypass current partition is also arranged in the electrolyte circulation tank, and one bypass current partition is arranged at each end of the area where the anode area and the cathode area alternate. A hole allowing the strip to pass through is formed on any one of the bypass current partitions. The non-contact electrolytic polishing system for superconducting base tapes further includes a dust removal and winding table and a drying oven. The dust removal and winding table is isolated from the external environment through an isolation cover, and the drying oven is communicated with the isolation cover through a quartz tube.

2. The non-contact electrolytic polishing system for a superconducting baseband according to claim 1, wherein, The parallel anodes include a first mounting bar and anode plates. The first mounting bar is arranged above the electrolyte circulation tank along the length direction of the electrolyte circulation tank, and a plurality of anode plates are spaced along the length direction of the first mounting bar through fasteners. The parallel cathodes include a second mounting bar and cathode plates. The second mounting bar is arranged above the electrolyte circulation tank along the length direction of the electrolyte circulation tank, and a plurality of cathode plates are spaced along the length direction of the second mounting bar through fasteners. The material of the anode plates includes titanium, platinum, graphite, or lead, and the material of the cathode plates includes stainless steel, lead, or graphite. The area ratio of the cathode plates to the anode plates is 1.5:1 to 3:

1.

3. The non-contact electrolytic polishing system for a superconducting baseband according to claim 2, characterized in that, The surface of the anode plate that does not face the strip is encapsulated with corrosion-resistant insulating polyethylene with an inner liner, and the surface facing the strip is encapsulated with a perforated polytetrafluoroethylene plate. The material of the bypass current partition is polytetrafluoroethylene.

4. The non-contact electrolytic polishing system for a superconducting baseband according to claim 1, wherein The electrolytic polishing device uses different current densities to achieve rough polishing and then fine polishing of the strip.

5. The non-contact electrolytic polishing system for a superconducting baseband according to claim 1, characterized in that, It also includes a first ultrasonic cleaning tank, a first spray cleaning tank, a first pure water spray tank, a second spray cleaning tank, a second ultrasonic cleaning tank, a second pure water spray tank, a third ultrasonic cleaning tank, a third pure water spray tank, a drying oven, and a dust removal and winding table. The winding device is arranged in the dust removal and winding table. Before electrolytic polishing, the strip is first cleaned by passing through the first ultrasonic cleaning tank, the first spray cleaning tank, and the first pure water spray tank in sequence. After electrolytic polishing, the strip is cleaned by passing through the second spray cleaning tank, the second ultrasonic cleaning tank, the second pure water spray tank, the third ultrasonic cleaning tank, and the third pure water spray tank in sequence, then enters the drying oven for drying, and finally enters the dust removal and winding table for winding.

6. The non-contact electrolytic polishing system for a superconducting baseband according to claim 1, characterized in that The drying oven includes a drying area and a drying maintenance area. The strip first passes through the drying area and then through the drying maintenance area, and then enters the isolation cover through a quartz tube and is wound by the winding device. The drying temperature of the drying oven is 350°C to 400°C.

7. The non-contact electrolytic polishing system for a superconducting baseband according to claim 1, characterized in that, An air knife is arranged between any two adjacent working tanks to blow the residual liquid on the surface of the strip.

8. The non-contact electrolytic polishing system for a superconducting baseband according to claim 1, characterized in that, A plurality of groups of the strip materials are arranged at intervals in the height direction, and any group of the strip materials is wound and unwound by a corresponding feeding device and a winding device.

9. A non-contact electrolytic polishing method for a superconducting baseband, characterized in that, When using the non-contact electrolytic polishing system for a superconducting baseband according to any one of claims 1-8, the electrolytic polishing method comprises the following steps: Step S1, pre-cleaning treatment of the strip material; Step S2, electrolytic polishing of the strip material; Step S3, post-cleaning treatment of the strip material; Step S4, drying treatment of the strip material; Step S5, winding of the strip material.

Images