A magnetic compensation system structure for micro atomic inertial devices

Abstract

The present invention discloses a magnetic compensation system structure for a miniature atomic inertial device, comprising: a Y-axis microcoil pair, a Z-axis microcoil pair, an X-axis microcoil pair, a support and limit base, and a printed circuit board. The X-axis and Z-axis microcoil pairs are perpendicular to the printed circuit board, while the Y-axis microcoil pair is parallel to the printed circuit board. The microcoil pairs for the X, Y, and Z axes are nested and orthogonal to each other and placed on the support and limit base to generate a magnetic field to compensate for static residual magnetism and magnetic field disturbances. The support and limit base is located on the printed circuit board, accommodating an air chamber and providing positional support for the three-axis microcoil pairs. The printed circuit board is located at the bottom layer of the structure and provides peripheral electrical connections and current transmission for the three-axis coil pairs. Compared to the traditional miniaturization method of proportionally reducing PCB coils, the present invention provides an effective structural solution with the advantages of higher processing accuracy, lower cost, and higher positioning and alignment accuracy.

Description

Technical Field

[0001] The present invention belongs to the field of atomic inertial devices, and specifically relates to a magnetic compensation system structure for a miniature atomic inertial device. The system is used for miniaturizing atomic inertial devices and compensating for the residual magnetic field of atomic inertial devices, and is suitable for miniaturized atomic inertial device prototypes. Background Art

[0002] Inertial devices, capable of sensing external angular velocity, are a core component of inertial navigation systems. In recent years, the rapid development of quantum technology has combined it with inertial devices to produce a new generation of atomic inertial devices. These devices offer the advantages of high precision, compact size, and low cost, and hold enormous potential for use in both military and civilian navigation applications.

[0003] Atomic inertial devices, based on the nuclear magnetic resonance effect, have very high requirements for the magnetic field in their operating environment. Magnetic shielding can significantly reduce the ambient magnetic field, but some magnetic field remains. Ambient geomagnetic fields and other electromagnetic devices can also cause magnetic field disturbances, affecting the performance of inertial devices. Therefore, a magnetic compensation system must be designed to compensate for the residual magnetic field and suppress magnetic field disturbances.

[0004] Currently, atomic inertial devices face the challenge of miniaturization. The usual approach to miniaturizing magnetic compensation systems is to proportionally reduce the PCB coils of large prototypes. However, this method has major drawbacks. On the one hand, miniaturization is difficult, processing precision is low, and cost is high. On the other hand, positioning and alignment accuracy are low, and magnetic fields in different directions are coupled. Summary of the Invention

[0005] The purpose of the present invention is to provide a micro-atomic inertial device magnetic compensation system structure to solve the problems of traditional PCB coil miniaturization, low processing precision, high cost, and low positioning and alignment accuracy. The atomic inertial device magnetic compensation system is miniaturized using micro-nano technology.

[0006] To achieve the above objectives, the present invention provides a magnetic compensation system structure for a miniature atomic inertial device, comprising: a Y-axis micro-coil pair, a Z-axis micro-coil pair, an X-axis micro-coil pair, a support and limit base, and a printed circuit substrate. The micro-coil pairs of the three axes are nested and orthogonal to each other and placed on the support and limit base, which is located on the printed circuit substrate. The X-axis micro-coil pair and the Z-axis micro-coil pair are perpendicular to the printed circuit substrate, and the Y-axis micro-coil pair is parallel to the printed circuit substrate.

[0007] Compared with the prior art, the present invention has at least the following advantages:

[0008] The micro-coil pairs of the X, Y, and Z axes of the present invention form a three-axis nested micro-coil. This solution makes the coil positioning and alignment more accurate, and can provide a uniform magnetic field in three directions in the target gas chamber area. The magnetic field uniformity in the three directions is similar and the coupling degree is low.

[0009] The three-axis nested micro coil of the present invention has no complicated wiring, is easy to process, is prepared by micro-nano technology, is easy to miniaturize, has high processing precision, and has low batch production cost.

[0010] The present invention adopts a support and limiting base to provide support for the air chamber and the three-axis micro-coil pair. The support and limiting accuracy are high, and can provide stable support and accurate positioning and alignment for the coil. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a structural diagram of the magnetic compensation system of the micro atomic inertial device in the present invention;

[0012] Figure 2 This is a structural diagram of the Y-axis micro-coil pair in the present invention;

[0013] Figure 3 This is a structural diagram of the Z-axis micro-coil pair in the present invention;

[0014] Figure 4 This is a structural diagram of the X-axis micro-coil pair in the present invention;

[0015] Figure 5 This is a structural diagram of the support and limiting base in the present invention;

[0016] Figure 6 This is a structural diagram of the printed circuit board in the present invention.

[0017] The accompanying drawings are denoted as follows:

[0018] Y-axis micro coil pair 1, Z-axis micro coil pair 2, X-axis micro coil pair 3, support and limit base 4 and printed circuit board 5;

[0019] First Y-axis micro coil 10, second Y-axis micro coil 11, small limiting holes 100-103, Y-axis flexible layer 110, Y-axis metal wire 112, square limiting hole 111, Y-axis pad 113, Y-axis silicon substrate 114;

[0020] A first Z-axis micro-coil 20, a second Z-axis micro-coil 21, a Z-axis limiting groove 210, a Z-axis metal wire 211, a Z-axis flexible layer 212, a Z-axis pad 213, a Z-axis horizontal silicon substrate 214, and a Z-axis vertical silicon substrate 215;

[0021] First X-axis micro coil 30, second X-axis micro coil 31, first X-axis limiting groove 310, X-axis light through hole 311, second X-axis limiting groove 312, X-axis vertical silicon substrate 313, X-axis horizontal silicon substrate 314, X-axis pad 315, X-axis flexible layer 316, X-axis metal wire 317;

[0022] Bosses 400-403, limiting cover plate 404, air chamber cavity 405, limiting platform 406, limiting piles 407-410, support platform 411, support base plate 412;

[0023] Substrate 500, light holes 501-504, and pads 505-510. DETAILED DESCRIPTION

[0024] The present invention is further described below with reference to the accompanying drawings and specific embodiments.

[0025] like Figure 1 As shown, a magnetic compensation system structure of a micro atomic inertial device of the present invention includes: a Y-axis micro coil pair 1, a Z-axis micro coil pair 2, an X-axis micro coil pair 3, a support and limit base 4 and a printed circuit substrate 5. The micro coil pairs of the three axes are nested and orthogonal to each other and placed on the support and limit base 4, which is located on the printed circuit substrate 5; the X-axis micro coil pair 3 and the Z-axis micro coil pair 2 are perpendicular to the printed circuit substrate 5, and the Y-axis micro coil pair 1 is parallel to the printed circuit substrate 5.

[0026] like Figure 2 As shown in FIG. 1 , the structure of the Y-axis microcoil pair 1 of the present invention is shown. The Y-axis microcoil pair 1 has the smallest radius and includes a first Y-axis microcoil 10 and a second Y-axis microcoil 11. The distance between the first Y-axis microcoil 10 and the second Y-axis microcoil 11 is equal to the radius of the circular Y-axis metal wire 112. The first Y-axis microcoil 10 and the second Y-axis microcoil 11 are parallel to the printed circuit substrate 5 and are inversely symmetrical in a direction perpendicular to the printed circuit substrate 5. The first Y-axis microcoil 10 and the second Y-axis microcoil 11 have the following identical parts: a Y-axis silicon substrate 114, a Y-axis flexible layer 110, a Y-axis metal wire 112, and a Y-axis pad 113. The Y-axis flexible layer 110 is on the Y-axis silicon substrate 114. The Y-axis micro coil 10 is formed by square deposition and etching, and the Y-axis metal wire 112 and the Y-axis pad 113 are formed by sputtering and etching above the Y-axis flexible layer 110, and are both prepared by micro-nano technology; the difference between the first and second Y-axis micro coils 10 and 11 is that: the first Y-axis micro coil 10 has four small limiting holes 100-103, which cooperate with the four bosses 400-403 in the support and limiting base 4 to limit the first Y-axis micro coil 10, and the second Y-axis micro coil 11 has a square limiting hole 111, which cooperates with the limiting platform 406 in the support and limiting base 4 to limit the second Y-axis micro coil 11.

[0027] like Figure 3As shown in the figure, the structure of the Z-axis micro-coil pair 2 of the present invention is given. The Z-axis micro-coil pair 2 has the largest radius and includes two identical micro-coils: a first Z-axis micro-coil 20 and a second Z-axis micro-coil 21. The distance between the two is equal to the radius of the circular Z-axis metal wire 211. The two are perpendicular to the printed circuit substrate 5 and are symmetrical in the Z-axis direction. The first Z-axis micro-coil 20 and the second Z-axis micro-coil 21 have the following identical parts: a Z-axis transverse silicon substrate 214 and a Z-axis vertical silicon substrate 215, a Z-axis flexible layer 212, a Z-axis metal wire 211, a Z-axis pad 213, a Z-axis limiting groove 210, and a Z-axis transverse silicon substrate 214 and a Z-axis vertical silicon substrate 215, a Z-axis flexible layer 212, a Z-axis metal wire 211, a Z-axis solder pad 213, a Z-axis limiting groove 210, and a Z-axis transverse silicon substrate 214 and a Z-axis vertical silicon substrate 215. The silicon substrate 214 is parallel to and adheres to the printed circuit substrate 5, the Z-axis vertical silicon substrate 215 is perpendicular to the printed circuit substrate 5, the Z-axis flexible layer 212 is deposited and etched above the Z-axis horizontal silicon substrate 214 and the Z-axis vertical silicon substrate 215, and the Z-axis metal wire 211 and the Z-axis pad 213 are sputtered and etched above the Z-axis flexible layer 212, all of which are prepared using micro-nano technology. The Z-axis flexible layer 212 can be bent into a hinge to connect the Z-axis horizontal silicon substrate 214 and the Z-axis vertical silicon substrate 215; the Z-axis limiting groove 210 is nested with the X-axis micro-coil pair 3 and the Y-axis micro-coil pair 1 to achieve positioning between the coils.

[0028] like Figure 4 As shown in FIG. 1 , the structure of the X-axis micro-coil pair 3 of the present invention is shown. The radius of the X-axis micro-coil pair 3 is between the radius of the Y-axis micro-coil pair 1 and the Z-axis micro-coil pair 2, and the X-axis micro-coil pair 3 includes two identical micro-coils: a first X-axis micro-coil 30 and a second X-axis micro-coil 31. The distance between the two is equal to the radius of the annular X-axis metal wire 317. The two are perpendicular to the printed circuit substrate 5 and are symmetrical in the X-axis direction. The first and second X-axis micro-coils 30 and 31 have the following identical parts: an X-axis vertical silicon substrate 313 and an X-axis horizontal silicon substrate 314, an X-axis flexible layer 316, an X-axis metal wire 317, an X-axis pad 315, a first X-axis limiting groove 310 and a second X-axis limiting groove 312, and an X-axis light hole 313. 11. The X-axis transverse silicon substrate 314 is parallel to and adheres to the printed circuit board 5. The X-axis vertical silicon substrate 313 is perpendicular to the printed circuit board 5. The X-axis flexible layer 316 is deposited and etched above the X-axis vertical silicon substrate 313 and the X-axis transverse silicon substrate 314. The X-axis metal wire 317 and the X-axis pad 315 are sputtered and etched above the X-axis flexible layer 316, all manufactured using micro-nano processing. The X-axis flexible layer 316 can be bent into a hinge, connecting the X-axis vertical silicon substrate 313 and the X-axis transverse silicon substrate 314. The first X-axis limiting groove 310 and the second X-axis limiting groove 312 are nested with the Y-axis micro-coil pair 1 to achieve positioning between the coils. The X-axis light hole 311 is used to pass the detection beam.

[0029] like Figure 5As shown in the figure, the structure of the support and limit base 4 in the present invention is given, and the support and limit base 4 includes four bosses 400-403, a limit cover 404, an air chamber cavity 405, a limit platform 406, four limit piles 407-410, a support platform 411, and a support bottom plate 412; the four bosses 400-403 cooperate with the four small limit holes 100-103 on the first Y-axis micro coil 10 to limit the coil, and the limit cover 404 is located above the air chamber cavity 405, covering the air chamber to prevent its vertical displacement, and the air chamber cavity 405 is placed squarely. shaped air chamber, which is placed from above. The limiting platform 406 cooperates with the square limiting hole 111 on the second Y-axis micro coil 11 to limit the coil. The limiting piles 407-410 are close to the Z-axis micro coil pair 2 and the X-axis micro coil pair 3, limiting the lateral freedom of the two groups of micro coil pairs to prevent the coils from sliding out laterally. The support platform 411 provides support for the three-axis micro coil. The support bottom plate 412 is located on the printed circuit substrate 5 and carries the support limiting base 4. The combination with the printed circuit substrate 5 includes bonding, bolt tightening, and mold limiting.

[0030] like Figure 6 As shown, the printed circuit substrate 5 includes a substrate 500, four light-through holes 501-504, and six pairs of pads 505-510. The substrate 500 is a copper-clad laminate, and four square light-through holes 501-504 are opened at orthogonal symmetrical positions on it for vertically passing the pump beam and the detection beam. The pads 505-510 are six pairs of square pads, which are arranged in an orthogonal symmetrical manner and are connected to the pads on the three-axis micro coil through leads to input current to the coil.

[0031] The Z-axis limiting groove 210 is a tic-tac-toe structure consisting of two parallel vertical grooves and two parallel horizontal grooves. The middle of the tic-tac-toe structure is hollow. The two parallel vertical grooves are used to pass through the X-axis micro coil pair 3, and the two parallel horizontal grooves are used to pass through the Y-axis micro coil pair 1.

[0032] The first X-axis limiting groove 310 is parallel to the second X-axis limiting groove 312 , and an X-axis light-through hole 311 is provided between the first X-axis limiting groove 310 and the second X-axis limiting groove 312 . The first X-axis limiting groove 310 and the second X-axis limiting groove 312 are used to pass through the Y-axis micro coil pair 1 .

[0033] The four bosses 400-403 are located at the four top corners of the top surface of the air chamber cavity 405; the four limit piles 407-410 and the support platform 411 are all located on the support base plate 412, and the four limit piles 407-410 are located outside the support platform 411, corresponding to the four edge positions of the support platform 411.

[0034] The Z-axis transverse silicon substrate 214 and the Z-axis vertical silicon substrate 215 are two separate structures, which are connected by the Z-axis flexible layer 212 .

[0035] The X-axis transverse silicon substrate 314 and the X-axis vertical silicon substrate 313 are two separate structures, which are connected by an X-axis flexible layer 316 .

[0036] The above specific implementation methods further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above are only specific implementation methods of the present invention and are not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A micro atomic inertial device magnetic compensation system structure, characterized in that: include: A Y-axis micro-coil pair (1), a Z-axis micro-coil pair (2), an X-axis micro-coil pair (3), a support and limit base (4) and a printed circuit substrate (5), wherein the micro-coil pairs of the three axes are nested and orthogonal to each other and are placed on the support and limit base (4), and the support and limit base (4) is located on the printed circuit substrate (5); the X-axis micro-coil pair (3) and the Z-axis micro-coil pair (2) are perpendicular to the printed circuit substrate (5), and the Y-axis micro-coil pair (1) is parallel to the printed circuit substrate (5); the support The support and limiting base (4) includes four bosses (400-403), a limiting cover (404), an air chamber cavity (405), a limiting platform (406), four limiting piles (407-410), a support platform (411), and a supporting bottom plate (412); the four bosses (400-403) cooperate with the four small limiting holes (100-103) on the Y-axis micro coil (10) to limit the coil, and the limiting cover (404) is located above the air chamber cavity (405) to cover the air chamber to prevent it from The air chamber cavity (405) is vertically displaced, and the square air chamber is placed in the air chamber cavity (405), and the placement method is to put it in from the top. The limiting platform (406) cooperates with the square limiting hole (111) on the Y-axis micro coil (11) to realize the limitation of the coil. The four limiting piles (407-410) are close to the Z-axis micro coil pair (2) and the X-axis micro coil pair (3), limiting the lateral freedom of the two sets of micro coil pairs to prevent the coils from sliding out laterally. The support platform (411) provides support for the three-axis coil, and the support base (412) is located on the printed circuit board. The circuit substrate (5) carries a support and limit base (4), and the combination method with the printed circuit substrate (5) includes bonding, bolt fastening, and mold limiting; the four bosses (400-403) are located at the four top corners of the top surface of the air chamber cavity (405); the four limit piles (407-410) and the support platform (411) are all located on the support bottom plate (412), and the four limit piles (407-410) are located outside the support platform (411) and correspond to the four edge positions of the support platform (411).

2. The micro atomic inertial device magnetic compensation system structure according to claim 1, characterized in that: The Y-axis microcoil pair (1) has the smallest radius and includes a first Y-axis microcoil (10) and a second Y-axis microcoil (11). The distance between the first Y-axis microcoil (10) and the second Y-axis microcoil (11) is equal to the radius of the circular Y-axis metal wire (112). The first Y-axis microcoil (10) and the second Y-axis microcoil (11) are parallel to the printed circuit substrate (5) and are reversely symmetrical in a direction perpendicular to the printed circuit substrate (5). The first Y-axis microcoil (10) and the second Y-axis microcoil (11) both have the following identical parts: a Y-axis silicon substrate (114), a Y-axis flexible layer (110), a Y-axis metal wire (112) and a Y-axis pad (113). The Y-axis flexible layer (110) is disposed on the Y-axis silicon substrate ( The Y-axis micro coil (10) is deposited and etched on the Y-axis micro coil (114), and the Y-axis metal wire (112) and the Y-axis pad (113) are sputtered and etched on the Y-axis flexible layer (110), and are all prepared by micro-nano technology; the first Y-axis micro coil (10) is provided with a small limiting hole (100-103), which cooperates with the boss (400-403) in the support limiting base (4) to limit the first Y-axis micro coil (10), and the second Y-axis micro coil (11) is provided with a square limiting hole (111), which cooperates with the limiting platform (406) in the support limiting base (4) to limit the second Y-axis micro coil (11).

3. The micro atomic inertial device magnetic compensation system structure according to claim 1, characterized in that: The Z-axis micro-coil pair (2) has the largest radius and includes two identical micro-coils: a first Z-axis micro-coil (20) and a second Z-axis micro-coil (21), the distance between the two being equal to the radius of the annular Z-axis metal wire (211), the two being perpendicular to the printed circuit board (5) and symmetrical in the Z-axis direction; the first Z-axis micro-coil (20) and the second Z-axis micro-coil (21) both have the following identical parts: a Z-axis transverse silicon substrate (214) and a Z-axis vertical silicon substrate (215), a Z-axis flexible layer (212), a Z-axis metal wire (211), a Z-axis soldering pad (213), a Z-axis limiting groove (210), and the Z-axis transverse silicon substrate (214) being parallel and fitted. On a printed circuit board (5), a Z-axis vertical silicon substrate (215) is perpendicular to the printed circuit board (5), a Z-axis flexible layer (212) is deposited and etched above the Z-axis horizontal silicon substrate (214) and the Z-axis vertical silicon substrate (215), a Z-axis metal wire (211) and a Z-axis pad (213) are sputtered and etched above the Z-axis flexible layer (212), and are all prepared using a micro-nano process, the Z-axis flexible layer (212) can be bent into a hinge to connect the Z-axis horizontal silicon substrate (214) and the Z-axis vertical silicon substrate (215); the Z-axis limiting groove (210) is nested with the X-axis micro coil pair (3) and the Y-axis micro coil pair (1) to achieve limiting between the coils.

4. The micro atomic inertial device magnetic compensation system structure according to claim 1, characterized in that: The X-axis micro-coil pair (3) has a radius between the Y-axis micro-coil pair (1) and the Z-axis micro-coil pair (2), and includes two identical micro-coils: a first X-axis micro-coil (30) and a second X-axis micro-coil (31). The distance between the two is equal to the radius of the annular X-axis metal wire (317). The two are perpendicular to the printed circuit board (5) and are symmetrical in the X-axis direction. The first X-axis micro-coil (30) and the second X-axis micro-coil (31) both have the following identical parts: an X-axis vertical silicon substrate (313) and an X-axis horizontal silicon substrate (314), an X-axis flexible layer (316), an X-axis metal wire (317), an X-axis pad (315), a first X-axis limiting groove (310) and a second X-axis limiting groove (312), an X-axis light hole (311), and an X-axis optical hole (312). The X-axis transverse silicon substrate (314) is parallel to and adheres to the printed circuit substrate (5), the X-axis vertical silicon substrate (313) is perpendicular to the printed circuit substrate (5), the X-axis flexible layer (316) is deposited and etched above the X-axis vertical silicon substrate (313) and the X-axis transverse silicon substrate (314), the X-axis metal wire (317) and the X-axis pad (315) are sputtered and etched above the X-axis flexible layer (316), and are all prepared using micro-nano technology. The X-axis flexible layer (316) can be bent into a hinge to connect the X-axis vertical silicon substrate (313) and the X-axis transverse silicon substrate (314); the first and second X-axis limiting grooves (310) and (312) are nested with the Y-axis micro coil pair (1) to achieve limiting between the coils, and the light hole (311) is used to pass the detection light beam.

5. The micro atomic inertial device magnetic compensation system structure according to claim 1, characterized in that: The printed circuit substrate (5) comprises a substrate (500), four light-through holes (501-504), and six pairs of pads (505-510). The substrate (500) is a copper-clad laminate, and four square light-through holes (501-504) are provided at orthogonally symmetrical positions thereon for vertically passing a pumping beam and a detection beam. The pads (505-510) are six pairs of square pads arranged in an orthogonally symmetrical manner and connected to pads on a three-axis microcoil via leads to input current into the coil.

6. The micro atomic inertial device magnetic compensation system structure according to claim 3, characterized in that: The Z-axis limiting groove (210) is a tic-tac-toe structure consisting of two parallel vertical grooves and two parallel transverse grooves, the middle of the tic-tac-toe structure is hollow, the two parallel vertical grooves are used to pass through the X-axis micro-coil pair (3), and the two parallel transverse grooves are used to pass through the Y-axis micro-coil pair (1).

7. The micro atomic inertial device magnetic compensation system structure according to claim 4, characterized in that: The first X-axis limiting groove (310) is parallel to the second X-axis limiting groove (312), and an X-axis light-through hole (311) is provided between the first X-axis limiting groove (310) and the second X-axis limiting groove (312). The first X-axis limiting groove (310) and the second X-axis limiting groove (312) are used to pass through the Y-axis micro coil pair (1).

8. The micro atomic inertial device magnetic compensation system structure according to claim 3, characterized in that: The Z-axis transverse silicon substrate (214) and the Z-axis vertical silicon substrate (215) are two separate structures, and the two structures are connected via a Z-axis flexible layer (212).

9. The micro atomic inertial device magnetic compensation system structure according to claim 4, characterized in that: The X-axis lateral silicon substrate (314) and the X-axis vertical silicon substrate (313) are two separate structures, and the two structures are connected via an X-axis flexible layer (316).

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