High-speed, high-frequency and high-power wafer signal measurement device

Abstract

The present invention provides a high-speed, high-frequency and high-power wafer signal measurement device, which includes a wafer chuck module, a probe card module and a test unit. The wafer chuck module includes a wafer chuck and a wafer carrier and an elastic conductive ring arranged on the wafer chuck in sequence. The wafer carrier carries the wafer and is electrically connected to the first surface of the wafer and the elastic conductive ring. The elastic conductive ring surrounds the wafer. The probe card module includes a probe card seat and a probe card. The probe card is arranged in the probe card seat and has a probe group configured to electrically connect the second surface of the wafer. The probe card seat has a conductive area electrically connected to the probe group. When the probe group is electrically connected to the second surface of the wafer, the conductive area is electrically connected to the elastic conductive ring. The test unit is electrically connected between the wafer chuck module and the probe card module to detect the wafer.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer testing, and in particular to a high-speed, high-frequency and high-power wafer signal measuring device. Background Art

[0002] With the advancement of technology, the use of wafers has become more and more popular. After the wafer is manufactured, it needs to be tested for signal transmission to ensure the quality of the wafer and other electronic components.

[0003] Generally speaking, wafer signal measurement devices test whether there is a problem with signal transmission. They usually use a probe card and a wafer chuck to connect the positive and negative electrodes of the wafer on both sides of the wafer to form a loop, and then use related test modules to electrically connect to the loop. The test results of the wafer are obtained through signal transmission and electrical signal analysis.

[0004] However, for wafers formed of different materials, they may face different tests such as high frequency, high current, high voltage or high power. The general wafer signal measurement device cannot respond to different tests at the same time, and it will cause problems such as setting up different measurement devices and the space, time, cost and other issues derived from them. It is worth mentioning that, as shown in Figure 1, the electrical connection between the probe card 91 and the wafer chuck 92 of the existing wafer signal measurement device 9 is often connected to the probe card 91 and the wafer chuck 92 on the wafer by means of a wire 93, which causes the transmission distance to be lengthened, stretched or too long, so it is not easy to achieve the purpose or efficiency of high-speed testing. In addition, most general wafer signal measurement devices directly carry the wafer on the wafer chuck, and when measuring the wafer with a large current, the wafer may stick to the wafer chuck or adhere to the wafer chuck, so that the entire device needs to be shut down for maintenance and the entire wafer chuck needs to be replaced, which often causes cost expenditure and production schedule delays.

[0005] In summary, the inventors of the present invention have considered and designed a high-speed, high-frequency and high-power wafer signal measurement device in order to improve the deficiencies of the conventional technology and further enhance its industrial implementation and utilization. Summary of the invention

[0006] The object of the present invention is to provide a high-speed, high-frequency and high-power wafer signal measurement device to improve the above-mentioned problems.

[0007] Based on the above purpose, the present invention provides a high-speed, high-frequency and high-power wafer signal measurement device, which is used to measure a wafer, and the wafer has a first surface and a second surface opposite to each other. The high-speed, high-frequency and high-power wafer signal measurement device of the present invention includes a wafer chuck module, a probe card module and a test unit. The wafer chuck module includes a wafer chuck, a wafer carrier and an elastic conductive ring. The wafer carrier is arranged on the wafer chuck, and the outer dimensions of the wafer carrier are greater than or equal to the outer diameter of the elastic conductive ring. The wafer carrier is configured to carry the wafer and electrically connect the first surface of the wafer. The elastic conductive ring is arranged on the wafer carrier and surrounds the wafer, and the elastic conductive ring is electrically connected to the wafer carrier. The probe card module includes a probe card seat and a probe card. The probe card is arranged on the probe card seat, and the probe card has a probe group that can be elastically deformed. The probe group is configured to electrically connect the second surface of the wafer. The probe card seat has a conductive area. The conductive area is electrically connected to the probe group. In addition, the size of the conductive area along an X direction or along a Y direction perpendicular to the X direction is greater than the outer diameter of the elastic conductive ring. When the probe group is electrically connected to the second surface of the wafer, the conductive area substantially contacts the elastic conductive ring to electrically connect the elastic conductive ring. The test unit is electrically connected between the wafer chuck module and the probe card module, and the test unit is configured to provide a test signal to detect the wafer. Among them, the probe card seat is configured to drive the probe card to move back and forth along the Z direction perpendicular to the X direction and the Y direction, so that the probe group of the probe card is electrically connected to the second surface of the wafer or is disconnected from the second surface of the wafer, and the conductive area presses or disengages from the elastic conductive ring.

[0008] Preferably, the probe card holder comprises a conductive member, the conductive member is insulated and fixed to the body of the probe card holder, the conductive member carries the probe card and is electrically connected to the probe set, and the conductive area is disposed on the conductive member.

[0009] Preferably, the conductive member has a hollow area to expose the probe set.

[0010] Preferably, an insulating layer is provided on one side of the conductive member facing the body of the probe card holder. The conductive member is provided with a plurality of fixing holes, and the conductive member is fixed to the body of the probe card holder by using a plurality of locking members to pass through the fixing holes and be locked to the body of the probe card holder. The insulating layer is provided at least on the portions of the plurality of locking members that are in contact with the conductive member.

[0011] Preferably, the conductive member includes a first conductive member and a second conductive member, the first conductive member is insulated and fixed to the body of the probe card seat, the first conductive member has the hollow area, the probe card is fixed to the second conductive member and electrically connected to the second conductive member, and the second conductive member is accommodated in the first conductive member.

[0012] Preferably, the body of the probe card holder is provided with two supporting blocks opposite to the accommodating space for accommodating the first conductive member, and the first conductive member has two supporting grooves corresponding to the supporting blocks, wherein an insulating layer is provided on a side of the supporting block facing the supporting groove, and / or the body of the probe card holder is provided with the insulating layer relative to the surface of the wafer chuck module after being combined with the conductive member.

[0013] Preferably, the probe card is provided with at least one first connector which is electrically connected to the probe group, and the second conductive member is provided with at least one second connector on a side facing the probe card corresponding to the first connector, and when the probe card is fixed to the second conductive member, the first connector is electrically connected to the second connector.

[0014] Preferably, the positive pole of the probe group is electrically connected to the second surface of the wafer, and the negative pole of the probe group is electrically connected to the conductive member.

[0015] Preferably, the elastic conductive ring has a first conductive surface and a second conductive surface opposite to each other. The entire area of ​​the first conductive surface is substantially in contact with the wafer carrier in a surface contact form, and at least a part of the area of ​​the second conductive surface is substantially in contact with the conductive area in a surface contact form.

[0016] Preferably, the elastic conductive ring is formed by one of conductive cloth, copper foil, conductive or non-conductive foam, conductive or non-conductive elastic silicone or rubber, conductive double glue, or any combination thereof.

[0017] The technical features of the present invention will be described in detail below with specific embodiments and accompanying drawings so that those skilled in the art can easily understand the objectives, technical features, and advantages of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in describing the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For technicians in the technical field of the present invention, other drawings can also be obtained based on these drawings.

[0019] FIG. 1 is a schematic diagram of a conventional measuring device.

[0020] FIG. 2 is a first structural diagram of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0021] FIG. 3 is a second schematic diagram of the structure of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0022] FIG. 4 is a schematic cross-sectional view of the wafer chuck module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0023] FIG. 5 is a schematic diagram of the three-dimensional structure of the wafer chuck module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0024] FIG. 6 is a schematic cross-sectional view of the probe card module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0025] FIG. 7 is a schematic diagram of the three-dimensional structure of the probe card module of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0026] FIG. 8 is a schematic diagram of the three-dimensional structure of a probe card module of another embodiment of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0027] FIG. 9 is a schematic structural diagram of another embodiment of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0028] Among them, the reference numerals in the figure are:

[0029] 1: high-speed, high-frequency and high-power wafer signal measurement device; 10: wafer chuck module; 11: wafer chuck; 12: wafer carrier; 13: elastic conductive ring; 131: first conductive surface; 132: second conductive surface; 20: probe card module; 21: probe card seat; 211: conductive area; 212: conductive member; 2121: first conductive member; 2122: second conductive member; 2123: bearing slot; 2124: second connector; 213: bearing block; 214: hollow area; 215: insulating layer; 216: fixing hole; 217: locking member; 22: probe card; 221: probe group; 222: first connector; 30: test unit; 9: existing measurement device; 91: existing probe card; 92: existing wafer chuck; 93: wire; W: wafer; W1: first surface; W2: second surface; X: X direction; and Z: Z direction. DETAILED DESCRIPTION

[0030] The advantages, features and technical methods achieved by the present invention will be described in more detail with reference to exemplary embodiments and the accompanying drawings so as to be more easily understood, and the present invention can be implemented in different forms, so it should not be understood as being limited to the embodiments described herein. On the contrary, for those skilled in the art, the provided embodiments will make the present disclosure more thorough and comprehensive and fully convey the scope of the present invention, and the present invention will only be defined by the appended claims.

[0031] It should be understood that although the terms "first", "second", etc. may be used in the present invention to describe various components, parts, regions, sections, layers and / or parts, these components, parts, regions, sections, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one component, part, region, section, layer and / or part from another component, part, region, section, layer and / or part.

[0032] Unless otherwise defined, all terms (including technical and scientific terms) used in the present invention have the same meaning as commonly understood by those skilled in the art of the present invention. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having definitions consistent with their meanings in the context of the relevant technology and the present invention, and will not be interpreted as idealized or overly formal meanings unless explicitly defined in this article.

[0033] Please also read Figures 2 to 5 . Figure 2 , Figure 3 They are respectively a schematic diagram of separation and a schematic diagram of the combined structure of a wafer chuck module and a probe card module of a high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0034] Figure 4 It is a structural schematic diagram of a wafer chuck module of a high-speed, high-frequency and high-power wafer signal measurement device of the present invention. Figure 5 It is a structural schematic diagram of a probe card module of a high-speed, high-frequency and high-power wafer signal measurement device of the present invention.

[0035] As shown in the figure, a high-speed, high-frequency and high-power wafer signal measurement device 1 of the present invention is used to measure whether the signal transmission of a wafer W is normal; the wafer W has a first surface W1 and a second surface W2 relative to each other. The high-speed, high-frequency and high-power wafer signal measurement device 1 of the present invention mainly includes a wafer chuck module 10, a probe card module 20 and a test unit 30. Of course, the high-speed, high-frequency and high-power wafer signal measurement device 1 of the present invention further includes components such as one or more processors for controlling the operation of each component and the calculation of measurement results, one or more driving modules for driving the probe card module 20 to move, and a display module for displaying the measurement results. These are components that are well known or commonly used by technicians in this technical field, and are not the main focus of the present invention. In order to avoid blurring the main focus of the present invention, they will not be described in detail here.

[0036] like Figures 2 to 5 As shown. The wafer chuck module 10 includes a wafer chuck 11, a wafer carrier 12 and an elastic conductive ring 13. The wafer chuck 11 is, for example, a wafer chuck that is well known or commonly used by technicians in the technical field. The wafer carrier 12 is disposed on the wafer chuck 11, and the wafer carrier 12 is configured to carry the wafer W. In addition, the outer dimensions of the wafer carrier 12 are greater than or equal to the outer diameter of the elastic conductive ring 13, so that the elastic conductive ring 13 is disposed on the wafer carrier 12 and surrounds the wafer W. For example, the outer dimensions of the wafer carrier 12 may correspond to the dimensions of the carrying surface of the wafer chuck 11, and the inner diameter of the elastic conductive ring 13 is greater than the diameter of the wafer W, and the outer diameter of the elastic conductive ring 13 is configured according to actual needs and is not much greater than the inner diameter of the elastic conductive ring 13, that is, the width of the elastic conductive ring 13 is configured according to actual needs.

[0037] It is worth mentioning that the wafer carrier 12 is made of a conductive or highly conductive material, such as copper, so that when the wafer carrier 12 carries the wafer W, the wafer carrier 12 is electrically connected to the first surface W1 of the wafer W, such as the negative electrode of the wafer W. In particular, the present invention can be directly used on or on the basis of a micro-modification on the wafer chuck of an existing or old measuring device by providing the wafer carrier 12 and the elastic conductive ring 13 thereon for being arranged on the wafer chuck 11, thereby saving the cost of repurchasing the measuring device, so as to achieve the convenience of seamless and painless connection when updating or replacing the measuring device. Furthermore, when an abnormal situation occurs during measurement, such as a high current measurement of the wafer causing the wafer to stick to the wafer carrier 12, the user can directly replace the wafer carrier 12 and the elastic conductive ring 13 thereon, thereby avoiding or reducing the risk of cost or production schedule delays caused by the need to shut down the entire device for maintenance or replace the entire wafer chuck, as the wafer of the existing measurement device sticks to the wafer chuck.

[0038] It is worth mentioning that the elastic conductive ring 13 is formed by conductive cloth, copper foil, conductive or non-conductive foam, conductive or non-conductive elastic silicone or rubber, conductive double glue, or any combination thereof. For example, the elastic conductive ring 13 can be directly formed by conductive silicone, rubber, foam, conductive double glue, polymer composite materials, etc., or the elastic conductive ring 13 can be formed into a ring body by silicone, rubber, foam, polymer composite materials, etc., and then the outer side of the ring body is covered with conductive cloth, copper foil, conductive foam, etc. The elastic conductive ring 13 is electrically connected to the wafer carrier 12. The wafer carrier 12 and the elastic conductive ring 13 located thereon can effectively save the cost of the wafer chuck by configuring the wafer carrier 12 and the elastic conductive ring 13 located thereon in the above manner, and it is helpful for the user to directly replace the wafer carrier 12 and the elastic conductive ring 13 located thereon when abnormal conditions occur when measuring the wafer with a large current, and the risk of measuring the wafer with a large current can be effectively reduced.

[0039] As shown in Figures 2, 3, 6, and 7. The probe card module 20 includes a probe card holder 21 and a probe card 22. Among them, the probe card 22 is arranged on the probe card holder 21. The probe card 22 has a probe group 221 that can be elastically deformed. The probe group 221 is configured to electrically connect the second surface W2 of the wafer W. The probe group 221 can be a component that is well known or commonly used by technicians in this technical field. In addition, the wafer carrier 12 is electrically connected to the first surface W1 of the wafer W and the probe group 221 is electrically connected to the second surface W2 of the wafer W. The detailed method or means are well known or commonly used by technicians in this technical field, for example, the probe group 221 is electrically connected to the positive pole of the wafer W, and the wafer carrier 12 is electrically connected to the negative pole of the wafer W, etc., so it will not be repeated here.

[0040] It is worth mentioning that the probe card holder 21 has a conductive area 211. The conductive area 211 is electrically connected to the probe group 221. The size of the conductive area 211 along the X direction or along the Y direction perpendicular to the X direction (eg Figure 2 The size of the conductive area 211 (facing the direction of the drawing, not shown in the drawing) is larger than the outer diameter of the elastic conductive ring 13, so that when the probe group 221 is electrically connected to the second surface W2 of the wafer W, the conductive area 211 substantially contacts the elastic conductive ring 13 to electrically connect the elastic conductive ring 13. The probe card holder 21 is configured to drive the probe card 22 to move back and forth along the Z direction perpendicular to the X direction and the Y direction, so that the probe group 221 of the probe card 22 is electrically connected to the second surface W2 of the wafer W or disconnected from the second surface W2 of the wafer W, and the conductive area 211 presses or disconnects from the elastic conductive ring 13.

[0041] Specifically, the elastic conductive ring 13 has at least a first conductive surface 131 and a second conductive surface 132 opposite to each other. The size of the conductive area 211 along the X direction or along the Y direction perpendicular to the X direction is greater than the outer diameter of the elastic conductive ring 13. For example, the conductive area 211 is a rectangle, and its size in the X direction or the Y direction is greater than the outer diameter of the elastic conductive ring 13, or the conductive area 211 can be a square, and the outer diameter of the elastic conductive ring 13 can be configured as an inscribed circle of the square, or the conductive area 211 can be a circle with a diameter greater than or equal to the outer diameter of the elastic conductive ring 13. Therefore, since the outer size of the wafer carrier 12 is greater than or equal to the outer diameter of the elastic conductive ring 13, the entire area of ​​the first conductive surface 131 is substantially in contact with the wafer carrier 12 in a surface contact form. In addition, since the size of the conductive area 211 along the X direction or along the Y direction is greater than the outer diameter of the elastic conductive ring 13, at least a portion of the second conductive surface 132 is substantially in contact with the conductive area 211 in a surface contact form.

[0042] On the other hand, the probe card holder 21 includes a conductive member 212. The conductive member 212 can be made of a conductive or good conductive material, such as copper. The conductive member 212 is insulated and fixed to the body of the probe card holder 21 to form the conductive area 211. The conductive member 212 carries the probe card 22 and is electrically connected to the probe group 221; wherein the conductive member 212 has a hollow area 214 to expose the probe group 221 so that one end of each probe of the probe group 221 can contact the wafer W.

[0043] It is worth mentioning that the conductive member 212 is insulated and fixed to the body of the probe card holder 21. The conductive member 212 may be provided with an insulating layer 215 on one side of the conductive member 212 facing the body of the probe card holder 21 or on one side and each side of the conductive member 212 facing the body of the probe card holder 21. The insulating layer 215 may be, for example, a Teflon insulating layer or a Teflon insulating pad. The conductive member 212 is provided with a plurality of fixing holes 216. The conductive member 212 may be respectively fixed to the body of the probe card holder 21 by passing through the fixing holes 216 with a plurality of locking members 217, thereby being fixed to the body of the probe card holder 21. Furthermore, at least the portions of the plurality of locking members 217 that are in contact with the conductive member 212 are provided with the insulating layer 215. For example, the locking member 217 may be a bolt, and the head of the bolt may be provided with the insulating layer 215, or the head of the bolt may be provided with the insulating layer 215 on one side facing the conductive member 212. With the above configuration, the conductive member 212 can be insulated and fixed to the body of the probe card holder 21 .

[0044] The test unit 30 is electrically connected between the wafer chuck module 10 and the probe card module 20, for example, the test unit 30 is connected to the wafer carrier 12 or the elastic conductive ring 13, etc. Therefore, the test unit 30 provides a test signal to measure the wafer W. Preferably, the positive pole of the probe group 221 is electrically connected to the second surface W2 of the wafer W, and the negative pole of the probe group 221 is electrically connected to the conductive member 212. Therefore, on the one hand, the probe group 221 can be directly electrically connected between the wafer W and the conductive member 212, and the conductive member 212 is directly electrically connected to the elastic conductive ring 13; on the other hand, the wafer carrier 12 is directly electrically connected to the wafer W, and the wafer carrier 12 is also directly electrically connected to the elastic conductive ring 13. Through the above configuration, a loop can be formed as a whole, so as to facilitate the test unit 30 to electrically connect and measure the wafer W.

[0045] Please also read Figure 8 , 9 . Figure 8 It is a three-dimensional structural schematic diagram of a probe card module of another embodiment of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention. Fig. 9 FIG. 1 is a schematic diagram of another embodiment of the high-speed, high-frequency and high-power wafer signal measurement device of the present invention. In this embodiment, the components with the same component symbols have the same or similar configurations and operations as the aforementioned embodiments, and the same or similar parts will not be repeated here.

[0046] As shown in the figure, the main difference between this embodiment and the previous embodiment is that the structure of the probe card module 20 is different. The conductive member includes a first conductive member 2121 and a second conductive member 2122. The first conductive member 2121 is insulated and fixed to the body of the probe card holder 21, and the second conductive member 2122 is accommodated in the first conductive member 2121. Further, the body of the probe card holder 21 has a receiving space for accommodating the first conductive member 2121, and the receiving space is provided with two supporting blocks 213 opposite to each other; correspondingly, the first conductive member 2121 has two supporting grooves 2123 corresponding to the supporting blocks 213. Thereby, the first conductive member 2121 can be stably accommodated in the body of the probe card holder 21.

[0047] It is worth mentioning that the side of the carrier block 213 facing the carrier slot 2123 is provided with an insulating layer 215; of course, the locking hole for locking the first conductive member 2121 and the body of the probe card holder 21 and the predetermined position on the locking member may also be provided with an insulating layer 215 or a coating formed by the insulating layer 215. In addition, after the body of the probe card holder 21 and the conductive member are combined, the insulating layer is provided relative to the surface of the wafer chuck module 10, and the method can be configured in combination with the above-mentioned method of providing the insulating layer 215 on the side of the carrier block 213 facing the carrier slot 2123, or can be directly configured without the above-mentioned method of providing the insulating layer 215 on the side of the carrier block 213 facing the carrier slot 2123.

[0048] The first conductive member 2121 has the hollow area 214, and the conductive area 211 is also formed on the side of the first conductive member 2121 facing the wafer chuck module 10. In addition, the probe card 22 is fixed to the second conductive member 2122 and electrically connected to the second conductive member 2122. Further, the probe card 22 is provided with at least one first connector 222, and four are used as a demonstration in this embodiment, but it is not limited to this. The first connector 222 is electrically connected to the probe group 221, for example, the first connector 222 is electrically connected to the negative pole of the probe group 221. At least one second connector 2124 is provided on the side of the second conductive member 2122 facing the probe card 22 corresponding to the first connector 222. When the probe card 22 is fixed to the second conductive member 2122, the first connector 222 is electrically connected to the second connector 2124, that is, the first connector 222 is plugged into the second connector 2124.

[0049] Thus, the probe assembly 221 can be electrically connected to the first connector 222, and the first connector 222 is electrically connected to the second connector 2124. The second conductive member 2122 is in substantial contact with the first conductive member 2121 when supported or accommodated, so that the second conductive member 2122 is electrically connected to the conductive area 211 on the first conductive member 2121.

[0050] It should be particularly noted that the high-speed, high-frequency and high-power wafer signal measurement device of the present invention can be used for automated measurement through the configuration of the above-mentioned embodiments. For example, the user can place multiple wafers in each layer of a wafer rack with multiple layers. Then, the wafer rack containing multiple wafers is set in the wafer signal measurement device, and the wafers are taken out one by one from the wafer rack by means of the wafer signal measurement device such as a vacuum chuck, a push unit or a combination thereof, and placed on a wafer carrier for measurement.

[0051] The high-speed, high-frequency and high-power wafer signal measurement device of the present invention can form an electrical connection loop with a short path as a whole through the above configuration, so that it can achieve the effect of high-speed measurement compared with the general or existing measurement device that uses wires to connect the probe card and the wafer chuck respectively on the wafer. In addition, the present invention can facilitate the use of existing or old measurement devices by setting the wafer carrier and the elastic conductive ring located thereon on the wafer chuck, and can save the cost of repurchasing the measurement device; and when an abnormal situation occurs in the measurement, the wafer carrier and the elastic conductive ring located thereon can be directly replaced, and the cost or production schedule delay caused by shutting down the entire device for maintenance or replacing the entire wafer chuck can be avoided. Furthermore, the present invention can achieve high-frequency and high-power wafer signal measurement through the configuration of the surface contact between the wafer carrier and the elastic conductive ring, and the configuration of the surface contact between the conductive member and the elastic conductive ring.

[0052] Through the description of the above embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by software plus a necessary general hardware platform, and of course by hardware. Based on this understanding, the above technical solution is essentially or the part that contributes to the prior art can be embodied in the form of a software product, and the computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, a disk, an optical disk, etc., including a number of instructions for a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in each embodiment or some parts of the embodiments.

[0053] The above description is for illustrative purposes only and is not intended to be limiting. Any equivalent modifications or changes made thereto without departing from the spirit and scope of the present invention shall be included in the appended claims.

Claims

1. A high-speed, high-frequency and high-power wafer signal measurement device, used for measuring a wafer, wherein the wafer has a first surface and a second surface opposite to each other, characterized in that: Include: A wafer chuck module, comprising a wafer chuck, a wafer carrier and an elastic conductive ring, wherein the wafer carrier is arranged on the wafer chuck, and the outer dimensions of the wafer carrier are greater than or equal to the outer diameter of the elastic conductive ring, the wafer carrier is configured to carry the wafer and electrically connect the first surface of the wafer, the elastic conductive ring is arranged on the wafer carrier and surrounds the wafer, and the elastic conductive ring is electrically connected to the wafer carrier; A probe card module, comprising a probe card holder and a probe card, wherein the probe card is disposed on the probe card holder, the probe card having a probe group capable of elastic deformation, the probe group being configured to electrically connect to the second surface of the wafer, the probe card holder having a conductive area, the conductive area being electrically connected to the probe group, and the size of the conductive area along an X direction or along a Y direction perpendicular to the X direction being larger than the outer diameter of the elastic conductive ring, and when the probe group is electrically connected to the second surface of the wafer, the conductive area substantially contacts the elastic conductive ring to electrically connect to the elastic conductive ring; A testing unit, electrically connected between the wafer chuck module and the probe card module, the testing unit being configured to provide a testing signal to detect the wafer; The probe card seat is configured to drive the probe card to move back and forth along the Z direction perpendicular to the X direction and the Y direction, so that the probe group of the probe card is electrically connected to the second surface of the wafer or disconnected from the second surface of the wafer, and the conductive area presses or disconnects from the elastic conductive ring.

2. The high-speed, high-frequency and high-power wafer signal measurement device as claimed in claim 1, characterized in that: The probe card seat includes a conductive member, which is insulated and fixed to the body of the probe card seat, the conductive member carries the probe card and is electrically connected to the probe group, and the conductive area is arranged on the conductive member.

3. The high-speed, high-frequency and high-power wafer signal measurement device as claimed in claim 2, characterized in that: The conductive element has a hollow area to expose the probe group.

4. The high-speed, high-frequency and high-power wafer signal measurement device as claimed in claim 3, characterized in that: An insulating layer is provided on one side of the conductive member facing the main body of the probe card holder, and the conductive member is provided with a plurality of fixing holes. The conductive member is fixed to the main body of the probe card holder by means of a plurality of locking members passing through the fixing holes respectively and being locked to the main body of the probe card holder, and at least the portions of the plurality of locking members in contact with the conductive member are provided with the insulating layer.

5. The high-speed, high-frequency and high-power wafer signal measurement device as claimed in claim 3, characterized in that: The conductive member includes a first conductive member and a second conductive member, the first conductive member is insulated and fixed to the body of the probe card seat, the first conductive member has the hollow area, the probe card is fixed to the second conductive member and electrically connected to the second conductive member, and the second conductive member is accommodated in the first conductive member.

6. The high-speed, high-frequency and high-power wafer signal measurement device as claimed in claim 5, characterized in that: The probe card seat body has two bearing blocks disposed opposite to each other in the accommodating space for accommodating the first conductive member, and the first conductive member has two bearing grooves corresponding to the bearing blocks, wherein: An insulating layer is disposed on a side of the carrier block facing the carrier slot, and / or the insulating layer is disposed on a surface of the probe card seat relative to the wafer chuck module after the body of the probe card seat and the conductive member are combined.

7. The high-speed, high-frequency and high-power wafer signal measurement device as claimed in claim 6, characterized in that: The probe card is provided with at least one first connector which is electrically connected to the probe group. The second conductive member is provided with at least one second connector on a side facing the probe card corresponding to the first connector. When the probe card is fixed to the second conductive member, the first connector is electrically connected to the second connector.

8. The high-speed, high-frequency and high-power wafer signal measurement device according to any one of claims 1 to 7, characterized in that: The positive electrode of the probe group is electrically connected to the second surface of the wafer, and the negative electrode of the probe group is electrically connected to the conductive member.

9. The high-speed, high-frequency and high-power wafer signal measurement device as claimed in claim 8, characterized in that: The elastic conductive ring has a first conductive surface and a second conductive surface opposite to each other. The entire area of ​​the first conductive surface is substantially in contact with the wafer carrier in a surface contact form, and at least a portion of the area of ​​the second conductive surface is substantially in contact with the conductive area in a surface contact form.

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