Control method, system, electronic equipment and medium for semiconductor lithography process

Abstract

The present disclosure provides a control method, system, electronic device and medium for a semiconductor lithography process, the control method comprising: presetting various types of process processing nodes based on the actual process requirements of the semiconductor lithography process; building a virtual process control environment for meeting the actual process requirements and mapping the actual process control environment according to different process processing nodes; obtaining actual node association data corresponding to different process processing nodes under the virtual process control environment, and generating a target process control strategy based on the actual node association data to control the semiconductor lithography process. In the present disclosure, by mapping the actual process flow to the data processing flow in the preset software platform, the construction and optimization process of the lithography process control scheme is simplified, the accuracy and efficiency of the semiconductor lithography process control are guaranteed, and rich data visualization, analysis, traceability and other functions are provided.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor manufacturing technology, and in particular to a control method, system, electronic equipment and medium for a semiconductor photolithography process. Background Art

[0002] At present, semiconductor lithography process control solutions generally have problems such as difficulty in adapting to changing process requirements, requiring staff to perform complex programming and configuration, limited data processing and analysis capabilities, and inability to fully integrate and utilize production data. Summary of the invention

[0003] The technical problem to be solved by the present disclosure is to overcome the above-mentioned defects in the prior art and to provide a control method, system, electronic equipment and medium for a semiconductor lithography process.

[0004] The present invention solves the above technical problems through the following technical solutions:

[0005] The present disclosure provides a control method for a semiconductor lithography process, the control method being applied in a preset software platform, and the control method comprising:

[0006] Based on the actual process requirements of semiconductor lithography, various types of process nodes are pre-set;

[0007] According to different process processing nodes, a virtual process control environment is built to meet the actual process requirements and map the actual process control environment;

[0008] The actual node association data corresponding to different process processing nodes in the virtual process control environment are obtained, and a target process control strategy is generated based on the actual node association data to control the semiconductor lithography process.

[0009] Preferably, the step of generating a target process control strategy based on the actual node association data comprises:

[0010] A preset integration processing scheme is adopted to perform integration analysis on the actual node-related data to generate the target process control strategy.

[0011] Preferably, the preset integration processing scheme is a fixed set integration processing scheme; or is a new integration processing scheme after reconfiguring the original integration processing scheme based on external modification information.

[0012] Preferably, the process node comprises a measurement data node, a process node or a process background node;

[0013] Wherein, the measurement data node is used to characterize the processing node for integrating, calling, and displaying all wafer status data generated by measurement equipment and analysis software in process production;

[0014] The process node is used to characterize, describe, analyze and simulate the process effect data of the manufacturing machine on the wafer during the production process, and return the processing node of the lithography process parameters;

[0015] The process background node is used to represent a processing node for integrating and calling process background information of wafers and equipment in process production.

[0016] Preferably, the control method further comprises:

[0017] Analyzing the actual node association data corresponding to the process node using a preset analysis method, and analyzing the first analysis result;

[0018] and / or,

[0019] The preset software platform is in communication connection with different external data terminals, and the database of the preset software platform is used to receive input data sent by different external data terminals;

[0020] The control method further comprises:

[0021] Using the measurement data node to obtain part or all of the input data from the database, and displaying the data through the interface of the preset software platform; and / or analyzing part or all of the input data to obtain a second analysis result and displaying the result through the interface of the preset software platform;

[0022] The input data includes measurement data and / or exposure data.

[0023] Preferably, the control method further comprises:

[0024] Using the measurement data node to output virtual measurement data corresponding to the current wafer under the actual process control environment;

[0025] and / or,

[0026] The measurement data node is used to output virtual measurement data corresponding to the current wafer under the actual process control environment, and the process data restoration processing is performed on the virtual measurement data to obtain the measurement state data of the current wafer before the process;

[0027] and / or,

[0028] The measurement data node is used to output virtual measurement data corresponding to the current wafer under the actual process control environment; the virtual measurement data is analyzed by a preset data model to obtain process parameters of the current wafer under the current batch, and the process parameters are input into a pre-trained first prediction model to predict and obtain first predicted measurement data of the current wafer under the current batch;

[0029] and / or,

[0030] Calculate and obtain the ratio or difference between the first measurement data after exposure and the second measurement data after etching of the same wafer;

[0031] and / or,

[0032] In response to the current wafer not being etched during exposure measurement, first historical measurement data of a first number of batches of wafers are input into a pre-trained second prediction model to obtain second predicted measurement data of the current wafer after etching under the current batch;

[0033] and / or,

[0034] Searching the database of the preset software platform for second historical measurement data of a second number of batches having the same process background information as the current wafer;

[0035] and / or,

[0036] In response to the current wafer needing to be exposed, searching the database of the preset software platform for a previous process node having the same process background information as that of the current wafer;

[0037] and / or,

[0038] Search the database of the preset software platform for alignment data that is identical to the process background information of the current wafer.

[0039] The present disclosure also provides a control system for a semiconductor lithography process, the control system is applied in a preset software platform, and the control system includes:

[0040] A node setting module is used to pre-set various types of process nodes based on the actual process requirements of the semiconductor lithography process;

[0041] A control environment building module, used to build a virtual process control environment that meets the actual process requirements and maps the actual process control environment according to different process processing nodes;

[0042] The control environment building module is used to obtain the actual node association data corresponding to the different process processing nodes in the virtual process control environment, and generate a target process control strategy based on the actual node association data to control the semiconductor lithography process.

[0043] Preferably, the control environment building module is also used to adopt a preset integration processing solution to perform integration analysis on the actual node association data to generate the target process control strategy.

[0044] Preferably, the preset integration processing scheme is a fixed set integration processing scheme; or is a new integration processing scheme after reconfiguring the original integration processing scheme based on external modification information.

[0045] Preferably, the process node comprises a measurement data node, a process node or a process background node;

[0046] Wherein, the measurement data node is used to characterize the processing node for integrating, calling, and displaying all wafer status data generated by measurement equipment and analysis software in process production;

[0047] The process node is used to characterize, describe, analyze and simulate the process effect data of the manufacturing machine on the wafer during the production process, and return the processing node of the lithography process parameters;

[0048] The process background node is used to represent a processing node for integrating and calling process background information of wafers and equipment in process production.

[0049] Preferably, the control system further comprises:

[0050] A first analysis module is used to analyze the actual node association data corresponding to the process node using a preset analysis method, and to generate a first analysis result;

[0051] and / or,

[0052] The preset software platform is in communication connection with different external data terminals, and the database of the preset software platform is used to receive input data sent by different external data terminals;

[0053] The control system further comprises:

[0054] A data acquisition module, used to acquire part or all of the input data from the database using the measurement data node, and call the first display module to display it through the interface in the preset software platform;

[0055] And / or, a second analysis module is used to analyze part of or all of the acquired input data to obtain a second analysis result, and call a second display module to display it through an interface in the preset software platform.

[0056] Preferably, the control system further comprises:

[0057] A data output module, used to output virtual measurement data corresponding to the current wafer under the actual process control environment using the measurement data node;

[0058] and / or,

[0059] A data output module, used to use the measurement data node to output virtual measurement data corresponding to the current wafer under the actual process control environment, and call the restoration processing module to perform process data restoration processing on the virtual measurement data to obtain measurement state data of the current wafer before the process;

[0060] and / or,

[0061] A data output module is used to use the measurement data node to output virtual measurement data corresponding to the current wafer under the actual process control environment, and call the first prediction module to use a preset data model to analyze the virtual measurement data to obtain process parameters of the current wafer under the current batch, and input the process parameters into a pre-trained first prediction model to predict and obtain first predicted measurement data of the current wafer under the current batch;

[0062] and / or,

[0063] A data calculation module, used for calculating the ratio or difference between the first measurement data after exposure and the second measurement data after etching of the same wafer;

[0064] and / or,

[0065] In response to the current wafer not being etched during exposure measurement, first historical measurement data of a first number of batches of wafers are input into a pre-trained second prediction model to obtain second predicted measurement data of the current wafer after etching under the current batch;

[0066] and / or,

[0067] A first data search module, configured to search the database of the preset software platform for second historical measurement data of a second number of batches having the same process background information as the current wafer;

[0068] and / or,

[0069] A second data search module is used for searching the database of the preset software platform for the previous process node having the same process background information as the current wafer in response to the current wafer needing to be exposed;

[0070] and / or,

[0071] The third data search module is used to search the database of the preset software platform for alignment data that is identical to the process background information of the current wafer.

[0072] The present disclosure also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and used to run on the processor, and the processor implements the above-mentioned semiconductor lithography process control method when executing the computer program.

[0073] The present disclosure also provides a computer-readable storage medium having a computer program stored thereon, and when the computer program is executed by a processor, the control method of the semiconductor lithography process is implemented.

[0074] The present disclosure also provides a computer program product, including a computer program, wherein when the computer program is executed by a processor, the control method of the semiconductor lithography process as described above is implemented.

[0075] On the basis of being in accordance with the common sense in the art, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present disclosure.

[0076] The positive and progressive effects of this disclosure are:

[0077] In the present disclosure, by mapping the actual process flow into the data processing flow in the preset software platform, the construction and optimization process of the process control solution of the existing semiconductor lithography process is simplified, the process data is integrated for data analysis and processing, and rich data visualization, analysis, traceability and other functions are provided to the staff, so that the control operation of the entire semiconductor lithography process has the advantages of flexibility, convenience and efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0078] Figure 1 This is a flow chart of a method for controlling a semiconductor photolithography process according to Embodiment 1 of the present disclosure;

[0079] Figure 2 This is a flow chart of a method for controlling a semiconductor photolithography process according to Embodiment 2 of the present disclosure;

[0080] Figure 3 This is a module schematic diagram of a control system for a semiconductor photolithography process according to Embodiment 3 of the present disclosure;

[0081] Figure 4 This is a module schematic diagram of a control system for a semiconductor photolithography process according to Embodiment 4 of the present disclosure;

[0082] Figure 5 This is a schematic diagram of the structure of an electronic device according to Embodiment 5 of the present disclosure. DETAILED DESCRIPTION

[0083] The present disclosure is further described below by way of examples, but the present disclosure is not limited to the scope of the examples.

[0084] Prefixes such as "first" and "second" are used in the embodiments of the present disclosure only to distinguish different description objects, and have no limiting effect on the position, order, priority, quantity or content of the described objects. The use of prefixes such as ordinal numbers to distinguish description objects in the embodiments of the present disclosure does not constitute a limitation on the described objects. For the statement of the described objects, please refer to the description in the context of the claims or embodiments, and no unnecessary limitation should be constituted due to the use of such prefixes. In addition, in the description of the present embodiment, unless otherwise specified, the meaning of "plurality" is two or more.

[0085] Example 1

[0086] The control method of the semiconductor lithography process of this embodiment is applied in a preset software platform.

[0087] like Figure 1 As shown, the control method of the semiconductor lithography process of this embodiment includes:

[0088] S101, pre-setting various types of process nodes based on actual process requirements of semiconductor lithography process;

[0089] Among them, different process scenarios generally correspond to different actual process requirements; and under the same process scenario, the process requirements may also be adjusted according to actual conditions, etc.; by allowing personalized settings of matching process processing nodes according to different actual process requirements, it is convenient for relevant staff to participate in the settings, which is flexible, simple and convenient to adapt to changing process requirement scenarios. There is no need for staff to implement it through responsible programming and configuration, which greatly reduces the workload and labor input costs of process implementation and improves the overall control processing efficiency.

[0090] S102. Building a virtual process control environment that meets actual process requirements and maps the actual process control environment according to different process processing nodes;

[0091] Among them, a virtual process control environment is built based on the process processing nodes to map the actual process flow into the data processing flow in the preset software platform, ensuring the timeliness, convenience and comprehensiveness of the acquisition and processing of various types of data in the semiconductor lithography process.

[0092] S103, obtaining actual node association data corresponding to different process processing nodes in a virtual process control environment;

[0093] S104: Generate a target process control strategy based on the actual node association data to control the semiconductor lithography process.

[0094] In the present disclosure, by mapping the actual process flow into the data processing flow in the preset software platform, the construction and optimization process of the process control solution of the existing semiconductor lithography process is simplified, the process data is integrated for data analysis and processing, and rich data visualization, analysis, traceability and other functions are provided to the staff, so that the control operation of the entire semiconductor lithography process has the advantages of flexibility, convenience and efficiency.

[0095] Example 2

[0096] The control method of the semiconductor photolithography process of this embodiment is a further improvement of the embodiment 1, specifically:

[0097] In one feasible solution, step S104 includes:

[0098] S1041. Use a preset integrated processing solution to integrate and analyze the actual node-related data to generate a target process control strategy to control the semiconductor lithography process.

[0099] Among them, the preset integration processing scheme can be pre-set according to actual needs, and the integration schemes corresponding to specific process requirements can be the same or different. The specific preset integration processing scheme to be adopted is determined based on the actual process requirements and will not be elaborated here.

[0100] In this solution, there is a certain correlation between the actual node-related data at different process processing nodes. By fully integrating and utilizing the data, the data processing and analysis capabilities can be effectively improved to achieve comprehensive and accurate control of the semiconductor lithography process and simplify and facilitate the control process.

[0101] In an implementable solution, the preset integration processing solution is a fixed set integration processing solution; or is a new integration processing solution after the original integration processing solution is reconfigured based on external modification information.

[0102] In this solution, the preset integrated processing solution can be fixed and can of course be modified; relevant staff can adapt and modify it according to actual needs, that is, the adjustment of the preset integrated processing solution can be completed without complex programming and configuration, thereby greatly reducing the overall calculation amount and ensuring the overall control processing efficiency.

[0103] In an practicable solution, the process node includes a measurement data node, a process node or a process background node;

[0104] Among them, the measurement data node is used to represent the processing node for integrating, calling, and displaying all wafer status data generated by measurement equipment and analysis software in process production;

[0105] The process node is used to characterize, describe, analyze, and simulate the process effect data of the manufacturing machine on the wafer during the production process, and return the processing node of the lithography process parameters;

[0106] The process background node is used to characterize the processing node that integrates and calls the process background information of wafers and equipment in process production.

[0107] Among them, different process processing nodes can also be reset or adjusted according to actual needs.

[0108] In the actual process control environment, measurement data nodes, process nodes, and process background nodes are not the production processes that the wafer must go through during the production process; taking the measurement data node as an example, when the wafer is measured by a real measurement machine, there is measurement data, and this part of the measurement data constitutes the measurement data node; the measurement data node is generally a summary of data measured during or after lithography, the process node represents the impact of lithography or other processes on the data, and the process background node represents the calculation of the data to meet the needs of lithography or other processes.

[0109] Among them, after the measurement data goes through the process, the data will change. The process node is used to describe this change. The process background node is used to provide input to the process node, and the process background node assists the process node in performing calculations.

[0110] In addition, measurement data nodes, process nodes, and process background nodes are all visualized in the preset software platform and are represented by different symbols; for example, measurement data nodes are represented by circles, process nodes are represented by squares, and process background nodes are represented by hexagons in the preset software platform.

[0111] In this solution, measurement data nodes, process nodes, and process background nodes are set in combination with the actual process control environment, and the actual process flow is mapped to the data processing flow in the preset software platform. Through the interconnection and combination of these nodes, a flexible, efficient, and easy-to-operate control solution for semiconductor lithography process is provided.

[0112] In an implementable solution, the control method further includes:

[0113] The actual node association data corresponding to the process node is analyzed using a preset analysis method, and a first analysis result is obtained.

[0114] Among them, the preset analysis methods include numerical calculation, wafer map, trend chart and other analyses.

[0115] Specifically, for example, for real measurement data, statistical values ​​such as maximum value, minimum value, median, standard deviation, and mean value can be analyzed to determine whether the real measurement data is normal; if the preset conditions are not met, the real measurement data is determined to be abnormal and the abnormal points are found; in addition, the wafer diagram displayed by the data can be combined for graphical analysis to locate where the abnormal points appear on the wafer; the trend chart displayed by the data can also be combined for analysis to determine whether certain wafers have abnormal trends at a certain moment, etc.

[0116] In this solution, by using a matching data analysis method to analyze the actual node-related data corresponding to the process processing nodes, abnormal situations can be extracted promptly and accurately so that relevant staff can be informed and intervene in time, further ensuring the rationality, comprehensiveness and reliability of the control process of the semiconductor lithography process.

[0117] In an implementable solution, the control method further includes:

[0118] The preset software platform is connected to different external data terminals for communication, and the database of the preset software platform is used to receive input data sent by different external data terminals;

[0119] The control method also includes:

[0120] Using the measurement data node to obtain part or all of the input data from the database, and displaying it through an interface in the preset software platform; and / or analyzing part or all of the obtained input data to obtain a second analysis result and displaying it through an interface in the preset software platform;

[0121] The input data includes measurement data, exposure data, etc. In addition, for part or all of the input data, the corresponding data can be obtained in a targeted manner according to preset display requirements; or the corresponding data can be obtained according to the personalized settings of relevant staff.

[0122] In this solution, the preset software platform can support the measurement data and exposure data of multiple suppliers to enter the database, and then these data can be intuitively displayed in the interface of the preset software platform using a specific data display method; these data can also be analyzed in a specific way to obtain analysis results, and these analysis results can be displayed in a specific way, so that relevant staff can intuitively view and analyze them, etc., thereby optimizing the overall process and further assisting in achieving convenient control of the entire process.

[0123] Measurement data nodes, process nodes, and process background nodes can also be subdivided into different processing nodes, such as real measurement data nodes, modeling nodes, restoration nodes, correction nodes, MTD (Metrology to Device) / NZO (None Zero Offset) nodes, R2R feedback navigation nodes, R2R feedforward navigation nodes, Alignment navigation nodes, etc.; among them, the overlay error of the wafer will shift after etching, and the overlay offset caused by Etch is generally called NZO or MTD; R2R refers to the wafer batch to batch control strategy, which means that after the wafer process of the previous batch is completed, the process conditions are immediately updated based on the results for the next batch of wafer processes;

[0124] Corresponding data processing operations are performed under these nodes respectively, specifically:

[0125] In an implementable solution, the control method further includes:

[0126] Under the real measurement data node, the measurement data node is used to output the virtual measurement data corresponding to the current wafer under the actual process control environment;

[0127] In an implementable solution, the control method further includes:

[0128] Under the restoration node, the measurement data node is used to output the virtual measurement data corresponding to the current wafer under the actual process control environment, and the process data restoration processing is performed on the virtual measurement data to obtain the measurement state data of the current wafer before the process;

[0129] In an implementable solution, the control method further includes:

[0130] Under the correction node, the measurement data node is used to output virtual measurement data corresponding to the current wafer under the actual process control environment; the virtual measurement data is analyzed using a preset data model to obtain process parameters of the current wafer under the current batch, and the process parameters are input into a pre-trained first prediction model to predict the first predicted measurement data of the current wafer under the current batch;

[0131] Among them, the first prediction model is obtained by model training based on the process parameters of several batches of wafers. There is no restriction on the specific preset model training, as long as the corresponding prediction purpose can be achieved.

[0132] In an implementable solution, the control method further includes:

[0133] Under the MTD / NZO node, the ratio or difference between the first measurement data after exposure and the second measurement data after etching of the same wafer is calculated;

[0134] Among them, ADI represents the measurement data after the wafer is exposed, and AEI represents the measurement data after the wafer is etched. In general processes, exposure is performed before etching. ADI / AEIOffset refers to the difference between the measurement data after exposure and the measurement data after etching of the same wafer. This difference can be obtained by directly calculating and analyzing in the preset software platform.

[0135] In an implementable solution, the control method further includes:

[0136] At the MTD / NZO node, in response to the current wafer not being etched during exposure measurement, first historical measurement data of wafers of a first number of batches are input into a pre-trained second prediction model to obtain second predicted measurement data of the current wafer after etching in the current batch;

[0137] When there are wafers that have not been etched in the exposure measurement stage, the data of the previous batch of wafers can be used to predict the measurement data of the current batch of wafers after etching.

[0138] Among them, the alignment data is the data generated by the lithography machine measurement, and the Overlay data (alignment accuracy between the current layer pattern and the reference layer pattern in the chip manufacturing process) that needs to be predicted is generated by the measurement machine; in the preset software platform, after the Alignment data is modeled, this model can be converted into a model that can act on the Overlay data for prediction, and the prediction model can realize the prediction of Alignment data to Overlay data. There is no restriction on which preset model is used for training, as long as it can achieve the corresponding prediction purpose.

[0139] Specifically, the alignment data and overlay data of wafers from historical batches are used to train a mathematical model to obtain a second prediction model; then the alignment data of the current batch is input into the trained second prediction model to predict the corresponding overlay data.

[0140] In an implementable solution, the control method further includes:

[0141] Under the R2R feedback navigation node, searching a database of a preset software platform for second historical measurement data of a second quantity batch having the same process background information as the current wafer;

[0142] Among them, when a wafer is to be exposed, it is necessary to find the previous batches of wafers that are consistent with the current wafer for feedback calculation, that is, to search the database of the preset software platform for the previous batches of wafer data with the same process background information as the current wafer. The required process background information can be customized in the R2R feedback navigation node.

[0143] In an implementable solution, the control method further includes:

[0144] In the R2R feedforward navigation node, in response to the current wafer needing to be exposed, the database of the preset software platform is searched for the previous process processing node with the same process background information as the current wafer. When a wafer needs to be exposed, it is necessary to find data that is in the same batch as the current wafer but at the previous process processing node, that is, to search the database of the preset software platform for data that has the same process background information as the current wafer and is at the previous process processing node.

[0145] In an implementable solution, the control method further includes:

[0146] Under the Alignment navigation node, search the database of the preset software platform for alignment data that is identical to the process background information of the current wafer.

[0147] Among them, the current node searches for Alignment data that is consistent with the process background information of the current wafer in the database of the preset software platform. The process background information can be customized in the Alignment navigation node.

[0148] In the preset software platform of this embodiment, calculation and acquisition of data of various dimensions can be performed based on data analysis, monitoring needs, etc. to meet various semiconductor lithography process control requirements.

[0149] Of course, any other auxiliary functions in the semiconductor lithography process can also be completed in the preset software platform of this embodiment to ensure accurate, timely and efficient process control of the semiconductor lithography process.

[0150] Example 3

[0151] The control system of the semiconductor photolithography process of this embodiment is applied in a preset software platform.

[0152] like Figure 3 As shown, the control system of the semiconductor lithography process of this embodiment includes:

[0153] A node setting module 1 is used to pre-set various types of process nodes based on actual process requirements of semiconductor lithography processes;

[0154] Among them, different process scenarios generally correspond to different actual process requirements; and under the same process scenario, the process requirements may also be adjusted according to actual conditions, etc.; by allowing personalized settings of matching process processing nodes according to different actual process requirements, it is convenient for relevant staff to participate in the settings, which is flexible, simple and convenient to adapt to changing process requirement scenarios. There is no need for staff to implement it through responsible programming and configuration, which greatly reduces the workload and labor input costs of process implementation and improves the overall control processing efficiency.

[0155] The control environment building module 2 is used to build a virtual process control environment that meets actual process requirements and maps the actual process control environment according to different process processing nodes;

[0156] Among them, a virtual process control environment is built based on the process processing nodes to map the actual process flow into the data processing flow in the preset software platform, ensuring the timeliness, convenience and comprehensiveness of the acquisition and processing of various types of data in the semiconductor lithography process.

[0157] The control environment building module 3 is used to obtain actual node association data corresponding to different process processing nodes in the virtual process control environment, and generate a target process control strategy based on the actual node association data to control the semiconductor lithography process.

[0158] In the present disclosure, by mapping the actual process flow into the data processing flow in the preset software platform, the construction and optimization process of the process control solution of the existing semiconductor lithography process is simplified, the process data is integrated for data analysis and processing, and rich data visualization, analysis, traceability and other functions are provided to the staff, so that the control operation of the entire semiconductor lithography process has the advantages of flexibility, convenience and efficiency.

[0159] Example 4

[0160] like Figure 4 As shown, the control system of the semiconductor lithography process of this embodiment is a further improvement of the embodiment 3, specifically:

[0161] In an implementable solution, the control environment building module 3 is also used to adopt a preset integration processing solution to perform integration analysis based on actual node association data to generate a target process control strategy.

[0162] Among them, the preset integration processing scheme can be pre-set according to actual needs, and the integration schemes corresponding to specific process requirements can be the same or different. The specific preset integration processing scheme to be adopted is determined based on the actual process requirements and will not be elaborated here.

[0163] In this solution, there is a certain correlation between the actual node-related data at different process processing nodes. By fully integrating and utilizing the data, the data processing and analysis capabilities can be effectively improved to achieve comprehensive and accurate control of the semiconductor lithography process and simplify and facilitate the control process.

[0164] In an implementable solution, the preset integration processing solution is a fixed set integration processing solution; or is a new integration processing solution after the original integration processing solution is reconfigured based on external modification information.

[0165] In this solution, the preset integrated processing solution can be fixed and can of course be modified; relevant staff can adapt and modify it according to actual needs, that is, the adjustment of the preset integrated processing solution can be completed without complex programming and configuration, thereby greatly reducing the overall calculation amount and ensuring the overall control processing efficiency.

[0166] In an practicable solution, the process node includes a measurement data node, a process node or a process background node;

[0167] Among them, the measurement data node is used to represent the processing node for integrating, calling, and displaying all wafer status data generated by measurement equipment and analysis software in process production;

[0168] The process node is used to characterize, describe, analyze, and simulate the process effect data of the manufacturing machine on the wafer during the production process, and return the processing node of the lithography process parameters;

[0169] The process background node is used to characterize the processing node that integrates and calls the process background information of wafers and equipment in process production.

[0170] Among them, different process processing nodes can also be reset or adjusted according to actual needs.

[0171] In the actual process control environment, measurement data nodes, process nodes, and process background nodes are not the production processes that the wafer must go through during the production process; taking the measurement data node as an example, when the wafer is measured by a real measurement machine, there is measurement data, and this part of the measurement data constitutes the measurement data node; the measurement data node is generally a summary of data measured during or after lithography, the process node represents the impact of lithography or other processes on the data, and the process background node represents the calculation of the data to meet the needs of lithography or other processes.

[0172] Among them, after the measurement data goes through the process, the data will change. The process node is used to describe this change. The process background node is used to provide input to the process node, and the process background node assists the process node in performing calculations.

[0173] In addition, measurement data nodes, process nodes, and process background nodes are all visualized in the preset software platform and are represented by different symbols; for example, measurement data nodes are represented by circles, process nodes are represented by squares, and process background nodes are represented by hexagons in the preset software platform.

[0174] In this solution, measurement data nodes, process nodes, and process background nodes are set in combination with the actual process control environment, and the actual process flow is mapped to the data processing flow in the preset software platform. Through the interconnection and combination of these nodes, a flexible, efficient, and easy-to-operate control solution for semiconductor lithography process is provided.

[0175] In one feasible solution, the control system further includes:

[0176] The first analysis module 4 is used to analyze the actual node association data corresponding to the process node using a preset analysis method and generate a first analysis result.

[0177] Among them, the preset analysis methods include numerical calculation, wafer map, trend chart and other analyses.

[0178] Specifically, for example, for real measurement data, statistical values ​​such as maximum value, minimum value, median, standard deviation, and mean value can be analyzed to determine whether the real measurement data is normal; if the preset conditions are not met, the real measurement data is determined to be abnormal and the abnormal points are found; in addition, the wafer diagram displayed by the data can be combined for graphical analysis to locate where the abnormal points appear on the wafer; the trend chart displayed by the data can also be combined for analysis to determine whether certain wafers have abnormal trends at a certain moment, etc.

[0179] In this solution, by using a matching data analysis method to analyze the actual node-related data corresponding to the process processing nodes, abnormal situations can be extracted promptly and accurately so that relevant staff can be informed and intervene in time, further ensuring the rationality, comprehensiveness and reliability of the control process of the semiconductor lithography process.

[0180] In an implementable solution, the preset software platform is connected to different external data terminals for communication, and the database of the preset software platform is used to receive input data sent by different external data terminals;

[0181] The control system also includes:

[0182] The data acquisition module 5 is used to acquire part or all of the input data from the database using the measurement data node, and call the first display module to display it through the interface in the preset software platform;

[0183] And / or, the second analysis module 6 is used to analyze part of the data or all of the acquired input data to obtain a second analysis result, and call the second display module to display it through an interface in a preset software platform.

[0184] The input data includes measurement data, exposure data, etc.

[0185] In addition, for part or all of the input data, the corresponding data can be obtained in a targeted manner according to preset display requirements; the corresponding data can also be obtained according to the personalized settings of relevant staff.

[0186] In this solution, the preset software platform can support the measurement data and exposure data of multiple suppliers to enter the database, and then these data can be intuitively displayed in the interface of the preset software platform using a specific data display method; these data can also be analyzed in a specific way to obtain analysis results, and these analysis results can be displayed in a specific way, so that relevant staff can intuitively view and analyze them, etc., thereby optimizing the overall process and further assisting in achieving convenient control of the entire process.

[0187] Measurement data nodes, process nodes, and process background nodes can also be subdivided into different processing nodes, such as real measurement data nodes, modeling nodes, restoration nodes, correction nodes, MTD / NZO nodes, R2R feedback navigation nodes, R2R feedforward navigation nodes, Alignment navigation nodes, etc. Corresponding data processing operations are performed under these nodes, specifically:

[0188] In one feasible solution, the control system further includes:

[0189] A data output module 7, used to output virtual measurement data corresponding to the current wafer under the actual process control environment using the measurement data node;

[0190] In an practicable solution, the control system further includes: a data output module 7, which is used to use the measurement data node to output the virtual measurement data corresponding to the current wafer under the actual process control environment, and call the restoration processing module to perform process data restoration processing on the virtual measurement data to obtain the measurement state data of the current wafer before the process;

[0191] In one feasible solution, the control system further includes:

[0192] The data output module 7 is used to use the measurement data node to output the virtual measurement data corresponding to the current wafer under the actual process control environment, and call the first prediction module to use the preset data model to analyze the virtual measurement data to obtain the process parameters of the current wafer under the current batch, and input the process parameters into the pre-trained first prediction model to predict the first predicted measurement data of the current wafer under the current batch;

[0193] Among them, the first prediction model is obtained by model training based on the process parameters of several batches of wafers. There is no restriction on the specific preset model training, as long as the corresponding prediction purpose can be achieved.

[0194] In one feasible solution, the control system further includes:

[0195] A data calculation module 8 is used to calculate the ratio or difference between the first measurement data after exposure and the second measurement data after etching of the same wafer;

[0196] Among them, ADI represents the measurement data after the wafer is exposed, and AEI represents the measurement data after the wafer is etched. In general processes, exposure is performed before etching. ADI / AEIOffset refers to the difference between the measurement data after exposure and the measurement data after etching of the same wafer. This difference can be obtained by directly calculating and analyzing in the preset software platform.

[0197] In one feasible solution, the control system further includes:

[0198] The data output module 7 is used for inputting the first historical measurement data of the previous first batch of wafers into the pre-trained second prediction model in response to the current wafer not being etched during the exposure measurement, so as to obtain the second predicted measurement data of the current wafer after etching under the current batch;

[0199] When there are wafers that have not been etched in the exposure measurement stage, the data of the previous batch of wafers can be used to predict the measurement data of the current batch of wafers after etching.

[0200] Among them, the alignment data is the data generated by the lithography machine measurement, and the Overlay data (alignment accuracy between the current layer pattern and the reference layer pattern in the chip manufacturing process) that needs to be predicted is generated by the measurement machine; in the preset software platform, after the Alignment data is modeled, this model can be converted into a model that can act on the Overlay data for prediction, and the prediction model can realize the prediction of Alignment data to Overlay data. There is no restriction on which preset model is used for training, as long as it can achieve the corresponding prediction purpose.

[0201] Specifically, the alignment data and overlay data of wafers from historical batches are used to train a mathematical model to obtain a second prediction model; then the alignment data of the current batch is input into the trained second prediction model to predict the corresponding overlay data.

[0202] In one feasible solution, the control system further includes:

[0203] A first data search module 9, used for searching a database of a preset software platform for second historical measurement data of a second number of batches having the same wafer process background information as the current wafer process background information;

[0204] Among them, when a wafer is to be exposed, it is necessary to find the previous batches of wafers that are consistent with the current wafer for feedback calculation, that is, to search the database of the preset software platform for the previous batches of wafer data with the same process background information as the current wafer. The required process background information can be customized in the R2R feedback navigation node.

[0205] In one feasible solution, the control system further includes:

[0206] The second data search module 10 is used for searching the database of the preset software platform for the previous process node having the same process background information as the current wafer in response to the current wafer needing to be exposed.

[0207] Among them, when a wafer needs to be exposed, it is necessary to find data that is in the same batch as the current wafer but is at the previous process processing node, that is, search the database of the preset software platform for data that has the same process background information as the current wafer and is at the previous process processing node.

[0208] In one feasible solution, the control system further includes:

[0209] The third data search module 11 is used to search the database of the preset software platform for alignment data that is identical to the process background information of the current wafer.

[0210] Among them, the current node searches for Alignment data that is consistent with the process background information of the current wafer in the database of the preset software platform. The process background information can be customized in the Alignment navigation node.

[0211] In the preset software platform of this embodiment, calculation and acquisition of data of various dimensions can be performed based on data analysis, monitoring needs, etc. to meet various semiconductor lithography process control requirements.

[0212] Of course, any other auxiliary functions in the semiconductor lithography process can also be completed in the preset software platform of this embodiment to ensure accurate, timely and efficient process control of the semiconductor lithography process.

[0213] As for the system embodiment, since it basically corresponds to the method embodiment, the relevant parts can refer to the partial description of the method embodiment. The system embodiment described above is only illustrative, wherein the units described as separate components may or may not be physically separated, and the components as units may or may not be physical units, that is, they may be located in one place, or they may be distributed on multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the disclosed solution.

[0214] Example 5

[0215] Figure 5 This is a schematic diagram of the structure of an electronic device shown in an example embodiment of the present disclosure, the electronic device includes a memory, a processor, and a computer program stored in the memory and used to run on the processor, and when the processor executes the computer program, the control method of the semiconductor lithography process described in any of the above embodiments is implemented. Figure 5 The electronic device 90 shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present disclosure.

[0216] like Figure 5 As shown, the electronic device 90 may be in the form of a general-purpose computing device, for example, it may be a server device. The components of the electronic device 90 may include, but are not limited to: at least one processor 91, at least one memory 92, and a bus 93 connecting different system components (including the memory 92 and the processor 91).

[0217] The bus 93 includes a data bus, an address bus, and a control bus.

[0218] The memory 92 may include a volatile memory, such as a random access memory (RAM) 921 and / or a cache memory 922 , and may further include a read-only memory (ROM) 923 .

[0219] The memory 92 may also include a program tool 925 (or utility) having a set (at least one) of program modules 924, such program modules 924 including but not limited to: an operating system, one or more application programs, other program modules and program data, each of which or some combination may include an implementation of a network environment.

[0220] The processor 91 executes various functional applications and data processing by running the computer program stored in the memory 92, such as the control method of the semiconductor lithography process provided by any of the above embodiments.

[0221] The electronic device 90 may also communicate with one or more external devices 94 (e.g., keyboards, pointing devices, etc.). Such communication may be performed via an input / output (I / O) interface 95. Furthermore, the electronic device 90 may also communicate with one or more networks (e.g., local area networks (LANs), wide area networks (WANs), and / or public networks, such as the Internet) via a network adapter 96. As shown, the network adapter 96 communicates with other modules of the electronic device 90 via a bus 93. It should be understood that, although not shown in the figure, other hardware and / or software modules may be used in conjunction with the electronic device 90, including but not limited to: microcode, device drivers, redundant processors, external disk drive arrays, RAID (disk array) systems, tape drives, and data backup storage systems, etc.

[0222] It should be noted that although several units / modules or sub-units / modules of the electronic device are mentioned in the above detailed description, this division is merely exemplary and not mandatory. In fact, according to the embodiments of the present disclosure, the features and functions of two or more units / modules described above can be embodied in one unit / module. Conversely, the features and functions of one unit / module described above can be further divided into multiple units / modules to be embodied.

[0223] Example 6

[0224] The embodiments of the present disclosure further provide a computer-readable storage medium having a computer program stored thereon, and when the program is executed by a processor, the control method of the semiconductor lithography process provided by any of the above embodiments is implemented.

[0225] The readable storage medium may include but is not limited to: a portable disk, a hard disk, a random access memory, a read-only memory, an erasable programmable read-only memory, an optical storage device, a magnetic storage device or any suitable combination of the above.

[0226] Example 7

[0227] The embodiment of the present disclosure further provides a computer program product, including a computer program, which implements any of the above-mentioned methods for controlling a semiconductor lithography process when executed by a processor.

[0228] Among them, the program code for executing the computer program product of the present disclosure can be written in any combination of one or more programming languages, and the program code can be executed completely on the user device, partially on the user device, as an independent software package, partially on the user device and partially on a remote device, or completely on the remote device.

[0229] Although the specific embodiments of the present disclosure are described above, those skilled in the art should understand that this is only an example, and the protection scope of the present disclosure is defined by the appended claims. Those skilled in the art may make various changes or modifications to these embodiments without departing from the principles and essence of the present disclosure, but these changes and modifications all fall within the protection scope of the present disclosure.

Claims

1. A method for controlling a semiconductor lithography process, characterized in that: The control method is applied in a preset software platform, and the control method includes: Based on the actual process requirements of semiconductor lithography, various types of process nodes are pre-set; According to different process processing nodes, a virtual process control environment is built to meet the actual process requirements and map the actual process control environment; The actual node association data corresponding to different process processing nodes in the virtual process control environment are obtained, and a target process control strategy is generated based on the actual node association data to control the semiconductor lithography process.

2. The method for controlling a semiconductor lithography process according to claim 1, characterized in that: The step of generating a target process control strategy based on the actual node association data comprises: A preset integration processing scheme is adopted to perform integration analysis on the actual node-related data to generate the target process control strategy.

3. The method for controlling a semiconductor lithography process according to claim 2, characterized in that: The preset integration processing scheme is a fixed set integration processing scheme; or a new integration processing scheme after reconfiguring the original integration processing scheme based on external modification information.

4. The method for controlling a semiconductor lithography process according to any one of claims 1 to 3, characterized in that: The process node includes a measurement data node, a process node or a process background node; Wherein, the measurement data node is used to characterize the processing node for integrating, calling, and displaying all wafer status data generated by measurement equipment and analysis software in process production; The process node is used to characterize, describe, analyze and simulate the process effect data of the manufacturing machine on the wafer during the production process, and return the processing node of the lithography process parameters; The process background node is used to represent a processing node for integrating and calling process background information of wafers and equipment in process production.

5. The method for controlling a semiconductor lithography process according to claim 4, characterized in that: The control method further comprises: Analyzing the actual node association data corresponding to the process node using a preset analysis method, and analyzing the first analysis result; and / or, The preset software platform is in communication connection with different external data terminals, and the database of the preset software platform is used to receive input data sent by different external data terminals; The control method further comprises: The measurement data node is used to obtain part or all of the input data from the database, and display it through the interface in the preset software platform; and / or, part or all of the input data obtained is analyzed to obtain a second analysis result and display it through the interface in the preset software platform.

6. The method for controlling a semiconductor lithography process according to claim 4, characterized in that: The control method further comprises: Using the measurement data node to output virtual measurement data corresponding to the current wafer under the actual process control environment; and / or, The measurement data node is used to output virtual measurement data corresponding to the current wafer under the actual process control environment, and the process data restoration processing is performed on the virtual measurement data to obtain the measurement state data of the current wafer before the process; and / or, The measurement data node is used to output virtual measurement data corresponding to the current wafer under the actual process control environment; the virtual measurement data is analyzed by a preset data model to obtain process parameters of the current wafer under the current batch, and the process parameters are input into a pre-trained first prediction model to predict and obtain first predicted measurement data of the current wafer under the current batch; and / or, Calculate and obtain the ratio or difference between the first measurement data after exposure and the second measurement data after etching of the same wafer; and / or, In response to the current wafer not being etched during exposure measurement, first historical measurement data of a first number of batches of wafers are input into a pre-trained second prediction model to obtain second predicted measurement data of the current wafer after etching under the current batch; and / or, Searching the database of the preset software platform for second historical measurement data of a second number of batches having the same process background information as the current wafer; and / or, In response to the current wafer needing to be exposed, searching the database of the preset software platform for a previous process node having the same process background information as that of the current wafer; and / or, Search the database of the preset software platform for alignment data that is identical to the process background information of the current wafer.

7. A control system for a semiconductor lithography process, characterized in that: The control system is applied in a preset software platform, and the control system includes: A node setting module is used to pre-set various types of process nodes based on the actual process requirements of the semiconductor lithography process; A control environment building module, used to build a virtual process control environment that meets the actual process requirements and maps the actual process control environment according to different process processing nodes; The control environment building module is used to obtain the actual node association data corresponding to the different process processing nodes in the virtual process control environment, and generate a target process control strategy based on the actual node association data to control the semiconductor lithography process.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and used to run on the processor, characterized in that: When the processor executes the computer program, the method for controlling a semiconductor lithography process according to any one of claims 1 to 6 is implemented.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the control method of the semiconductor lithography process according to any one of claims 1 to 6 is implemented.

10. A computer program product, comprising a computer program, characterized in that When the computer program is executed by a processor, the control method of the semiconductor lithography process according to any one of claims 1 to 6 is implemented.

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